Gas supply device for substrate processing apparatus and substrate processing apparatus

Abstract

The present invention relates to a gas supply device for a substrate processing apparatus and a substrate processing apparatus, including a first gas supply unit for supplying a first gas to a chamber that provides a processing space for a substrate, a second gas supply unit for supplying a second gas having a vapor pressure higher than that of the first gas to the chamber, a first carrier supply unit for supplying a first carrier gas to the first gas supply unit so as to increase the flow force of the first gas, and a second carrier supply unit for supplying a second carrier gas to the second gas supply unit so as to increase the flow force of the second gas.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for performing processing steps such as a deposition step and an etching step on a substrate. [Background technology]

[0002] Generally, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes such as a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film at the selectively exposed portions to form a pattern are performed. These substrate processing processes are performed by a substrate processing apparatus.

[0003] In order to perform such a process, a gas supply apparatus for a substrate processing apparatus is used. The gas supply apparatus for a substrate processing apparatus includes a plurality of gas supply units for injecting a predetermined process gas into a chamber. Each of the gas supply units can inject one selected from a source gas and a reaction gas to perform a process such as depositing a predetermined thin film layer on the substrate.

[0004] Here, the conventional gas supplying apparatus for a substrate processing apparatus has a problem that the flow rate of the process gas discharged from the gas supplying unit reaching the chamber is reduced due to low vapor pressure, and therefore the conventional gas supplying apparatus for a substrate processing apparatus has a problem of degrading the quality of the substrate that has undergone the process due to the reduced amount of process gas involved in the process. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been devised to solve the above-mentioned problems, and provides a gas supply device for a substrate processing apparatus and a substrate processing apparatus that can increase the flow rate of process gas reaching a chamber. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0007] The substrate processing apparatus according to the present invention includes a chamber for providing a processing space for a substrate, a first vaporizer, a second vaporizer ... Pressure The chamber may include a first gas supply unit for supplying a first gas having a vapor pressure (Vapor Pressure) to the chamber, a second gas supply unit for supplying a second gas having a second vapor pressure greater than the first vapor pressure to the chamber, and a third gas supply unit for supplying a third gas having a third vapor pressure greater than the second vapor pressure to the chamber.

[0008] The gas supply device for a substrate processing apparatus according to the present invention may include a first gas supply unit for supplying a first gas to a chamber providing a processing space for a substrate, a second gas supply unit for supplying a second gas having a vapor pressure higher than that of the first gas to the chamber, a first carrier supply unit for supplying a first carrier gas to the first gas supply unit so as to increase a flow force of the first gas, and a second carrier supply unit for supplying a second carrier gas to the second gas supply unit so as to increase a flow force of the second gas. The first carrier supply unit may supply the first carrier gas such that the first carrier gas is supplied to the first gas supply unit at a higher flow rate than the second carrier gas. The first gas supply unit may be separated from the chamber by a distance longer than a distance at which the second gas supply unit is separated from the chamber.

[0009] The gas supply apparatus for a substrate processing apparatus according to the present invention may include N (N is an integer of 3 or more) gas supply units for supplying process gases having different vapor pressures to a chamber providing a process space for a substrate, and N carrier supply units for supplying a carrier gas to each of the gas supply units so as to increase the flow force of the process gas. A first gas supply unit among the gas supply units supplies a first gas having a lower vapor pressure to the chamber compared to a second gas supply unit among the gas supply units, and may be separated from the chamber by a longer distance compared to the second gas supply unit. A first carrier supply unit among the carrier supply units may supply a first carrier gas having a larger flow rate to the first gas supply unit compared to a second carrier supply unit among the carrier supply units. Effect of the Invention

[0010] According to the present invention, the following effects can be achieved.

[0011] The present invention can be embodied to increase the amount of process gas involved in a process, thereby improving the quality of a substrate that has undergone the process.

[0012] The present invention can be embodied to increase the mixing amount of process gas within the chamber, thereby increasing the productivity of substrates that have undergone a processing process.

[0013] The present invention is embodied to reduce deviations in the flow rate of process gas reaching a chamber, thereby improving the uniformity of the process gas involved in a processing process. [Brief description of the drawings]

[0014] [Figure 1] 1 is a schematic side view showing an embodiment of a substrate processing apparatus according to the present invention; [Diagram 2]3 is a schematic side view showing an enlarged view of a first gas supply unit, a second gas supply unit, a third gas supply unit, a first gas flow path, a second gas flow path, and a third gas flow path in the substrate processing apparatus according to the present invention. FIG. [Diagram 3] FIG. 3 is a schematic enlarged view of part A in FIG. 2 . [Figure 4] 4 is a schematic side view of an embodiment of the substrate processing apparatus according to the present invention, in which a first carrier gas flows through a first common flow path and a second common flow path in this order; FIG. [Diagram 5] 11 is a schematic side view of a comparative example in which the first carrier gas does not flow sequentially through the first common flow channel and the second common flow channel. FIG. [Figure 6] FIG. 2 is a schematic side view of an embodiment of a substrate processing apparatus according to the present invention including four gas supply devices and four carrier supply units. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. The gas supply apparatus for a substrate processing apparatus according to the present invention supplies a process gas used for performing a substrate processing process, and can be included in the substrate processing apparatus according to the present invention. Therefore, the gas supply apparatus for a substrate processing apparatus according to the present invention will be described together with the embodiment of the substrate processing apparatus according to the present invention.

[0016] Referring to FIG. 1, a substrate processing apparatus 1 according to the present invention performs a processing step on a substrate (S). The substrate (S) may be a glass substrate, a silicon substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform a deposition step of depositing a thin film on the substrate (S), and an etching step of removing a part of the thin film deposited on the substrate (S). The following description will be given based on an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition step, but it will be obvious to a person skilled in the art to which the present invention pertains that an embodiment in which the substrate processing apparatus 1 according to the present invention performs other processing steps, such as the etching step, can be derived from this.

[0017] Referring to FIG. 1, a substrate processing apparatus 1 according to the present invention may include a chamber 100, a substrate support unit 200, and a gas injection unit (not shown).

[0018] The chamber 100 provides a process space for the substrate S. A predetermined deposition process can be performed using the process gas by supplying the process gas into the chamber 100. The chamber 100 may be formed as a hollow cylinder as a whole, but is not limited thereto, and may also be formed as a hollow rectangular parallelepiped.

[0019] The substrate support part 200 supports the substrate (S). The substrate support part 200 can support the substrate (S) disposed in a process space inside the chamber 100. The substrate support part 200 can be installed in the chamber 100. The substrate support part 200 can be installed in the chamber 100 so as to be rotatable in a predetermined direction. With the substrate (S) supported by the substrate support part 200, a deposition process can be performed to deposit a predetermined thin film layer on the substrate (S). The hatching in FIG. 1 is a schematic representation of a general cross-sectional line of the chamber 100 and the substrate support part 200.

[0020] 1, a substrate processing apparatus 1 according to the present invention may include a gas supply system 1A. A gas supply apparatus for a substrate processing apparatus according to the present invention may be embodied to include the gas supply system 1A.

[0021] The gas supply system (1A) is for supplying a first gas, a second gas, and a third gas to the chamber, where each of the first gas, the second gas, and the third gas may be a process gas used in the deposition process. The gas supply system (1A) may be disposed outside the chamber 100.

[0022] The gas supply system (1A) is for mixing a first mixed gas and a second mixed gas and supplying the mixed gas to the chamber 100. Here, the first mixed gas may be a gas in which the first gas and the second gas are mixed, and the second mixed gas may be a gas in which the first mixed gas and the third gas are mixed. The gas supply system (1A) can mix the first gas and the second gas with priority, and can mix the first mixed gas and the third gas in sequence. The gas supply system (1A) may include a plurality of gas supply units, a plurality of carrier supply units, and a plurality of gas flow paths through which the process gas flows.

[0023] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a first gas supply unit 2. In the embodiment shown in FIG.

[0024] The first gas supply unit 2 is for supplying a first gas to the chamber 100. The first gas supply unit 2 can supply the first gas having a first vapor pressure to the chamber 100. When the first gas supply unit 2 supplies the first gas to the chamber 100, a processing process using the first gas can be performed in the chamber 100. The first gas can be a process gas involved in the processing process. The first gas can be a precursor constituting a source material of a thin film to be deposited on the substrate (S). For example, the first gas can be composed of indium. The first gas can also be a reaction gas that reacts with a source material.

[0025] The first gas supply unit 2 may be separated from the chamber 100. The first gas supply unit 2 may be disposed outside the chamber 100. The first gas supply unit 2 may store the first gas and supply the first gas to the chamber 100. Although not shown in the figure, the first gas supply unit 2 may receive the first gas from the outside via a first gas supply unit.

[0026] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a second gas supply unit 3. As shown in FIG.

[0027] The second gas supply unit 3 is for supplying a second gas to the chamber 100. The second gas supply unit 3 can supply the second gas having a second vapor pressure to the chamber 100. When the second gas supply unit 3 supplies the second gas to the chamber 100, a processing process using the second gas can be performed in the chamber 100. The second gas can be a process gas involved in the processing process. The second gas can be a precursor constituting a source material of a thin film to be deposited on the substrate (S). That is, the second gas and the first gas can all be source gases. Alternatively, the second gas and the first gas can be different gases. For example, when the first gas is a source gas, the second gas can be a reaction gas.

[0028] The second gas supplied by the second gas supply unit 3 may have a higher vapor pressure than the first gas. That is, the second vapor pressure may be higher than the first vapor pressure. For example, when the first gas is composed of indium, the second gas may be composed of zinc. When the second gas has a higher vapor pressure than the first gas, the second gas may have a higher flow force than the first gas. That is, the second gas may flow a longer flow distance than the first gas.

[0029] The second gas supply unit 3 may be separated from the chamber 100. The second gas supply unit 3 may be disposed outside the chamber 100. The second gas supply unit 3 may store the second gas and supply the second gas to the chamber 100. Although not shown in the figure, the second gas supply unit 3 may receive the second gas from the outside via a second gas supply unit.

[0030] The second gas supply unit 3 may be disposed closer to the chamber 100 than the first gas supply unit 2. For example, the length of a gas flow path connecting the second gas supply unit 3 to the chamber 100 may be shorter than the length of a gas flow path connecting the first gas supply unit 2 to the chamber 100. That is, the first gas supply unit 2 may be disposed at a longer distance than the second gas supply unit 3 is disposed at a longer distance from the chamber 100. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that a gas supply unit supplying a low vapor pressure process gas is disposed farther from the chamber 100.

[0031] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a third gas supply unit 4. In the embodiment shown in FIG.

[0032] The third gas supply unit 4 is for supplying a third gas into the chamber. The third gas supply unit 4 can supply the third gas having a third vapor pressure to the chamber 100. When the third gas supply unit 4 supplies the third gas to the chamber 100, a processing process using the third gas can be performed in the chamber 100. The third gas can be a process gas involved in the processing process. The third gas can be a precursor constituting a source material of a thin film to be deposited on the substrate (S). That is, the third gas, the second gas, and the first gas can all be source gases. Alternatively, the third gas can be a gas different from the second gas and the first gas. For example, when the first gas and the second gas are both source gases, the third gas can be a reaction gas.

[0033] The third gas supplied by the third gas supply unit 4 may have a higher vapor pressure than the second gas. That is, the third vapor pressure may be higher than the second vapor pressure. For example, when the first gas is indium and the second gas is zinc, the third gas may be gallium. The magnitude relationship of the vapor pressures of the first gas, the second gas, and the third gas described as examples of process gases in this specification may be embodied as first vapor pressure<second vapor pressure<third vapor pressure. When the third gas has a higher vapor pressure than the second gas, the third gas may have a higher flow force than the second gas and the first gas. That is, the third gas may flow a longer flow distance than the second gas and the first gas.

[0034] The third gas supply unit 4 may be separated from the chamber 100. The third gas supply unit 4 may be disposed outside the chamber 100. The third gas supply unit 4 may store the third gas and supply the third gas to the chamber 100. Although not shown in the figure, the third gas supply unit 4 may receive the third gas from the outside via a third gas supply unit.

[0035] The third gas supply unit 4 may be disposed closer to the chamber 100 than the second gas supply unit 3. For example, a length of a gas flow path connecting the third gas supply unit 4 to the chamber 100 may be formed shorter than a length of a gas flow path connecting the second gas supply unit 3 to the chamber 100. That is, the second gas supply unit 3 may be disposed to be separated from the chamber 100 by a longer distance than a distance the third gas supply unit 4 is separated from the chamber 100. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that a gas supply unit supplying a low vapor pressure process gas is disposed farther from the chamber 100.

[0036] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a first carrier supply unit 5. The first carrier supply unit 5 is a substrate processing apparatus 100 shown in FIG.

[0037] The first carrier supply unit 5 supplies a first carrier gas to the first gas supply unit 2. The first carrier gas may be a gas for increasing the flow force of the first gas. The first carrier gas may increase the distance over which the first gas can flow by pushing the first gas toward the chamber 100. The first carrier gas may be any one gas selected from N2, Ar, He, and Ne. The first carrier supply unit 5 may be connected to the first gas supply unit 2. The dotted arrows in FIG. 2 are schematic diagrams showing the general flow direction of the first carrier gas.

[0038] The first carrier supply unit 5 may be connected to the first gas supply unit 2 while being separated from the chamber 100. The first carrier supply unit 5 may store the first carrier gas and supply the first carrier gas to the first gas supply unit 2.

[0039] 1 and 2, the first carrier supply unit 5 can include a first control module 51.

[0040] The first control module 51 adjusts the flow rate of the first carrier gas. The first control module 51 may be disposed at an outlet side of the first carrier supply unit 5. The first control module 51 may adjust the flow rate of the first carrier gas to adjust the flow force of the first gas. The first control module 51 may be generally implemented as a valve.

[0041] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a second carrier supply unit 6. In the embodiment shown in FIG.

[0042] The second carrier supply unit 6 supplies a second carrier gas to the second gas supply unit 3. The second carrier gas may be a gas for increasing the flow force of the second gas. The second carrier gas may increase the distance through which the second gas can flow by pushing the second gas toward the chamber 100. The second carrier gas may be any one gas selected from N2, Ar, He, and Ne. The second carrier gas may be the same gas as the first carrier gas. The second carrier supply unit 6 may be connected to the second gas supply unit 3. The dashed arrow in FIG. 2 is a schematic diagram showing the general flow direction of the second carrier gas.

[0043] The second carrier supply unit 6 may be connected to the second gas supply unit 3 while being spaced apart from the chamber 100. The second carrier supply unit 6 may store the second carrier gas and supply the second carrier gas to the second gas supply unit 3. The second carrier supply unit 6 may be spaced apart from the chamber 100 at a shorter distance than the first carrier supply unit 5.

[0044] The second carrier supply unit 6 can supply the second carrier gas such that the second carrier gas is supplied to the second gas supply unit 3 at a flow rate smaller than that of the first carrier gas. That is, the first carrier gas can flow at a flow rate larger than that of the second carrier gas. As a result, the substrate processing apparatus 1 according to the present invention can achieve the following effects.

[0045] First, the substrate processing apparatus 1 according to the present invention is embodied so that the flow rate of the first carrier gas is greater than the flow rate of the second carrier gas, thereby increasing the distance over which the first gas can flow. As a result, the substrate processing apparatus 1 according to the present invention can increase the amount of the first gas involved in the processing step by increasing the flow rate of the first gas that reaches the chamber 100. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality of the substrate (S) that has been subjected to the processing step.

[0046] Secondly, the substrate processing apparatus 1 according to the present invention is embodied such that the first carrier gas increases the flow force of the first gas, and the second carrier gas increases the flow force of the second gas. Thus, the substrate processing apparatus 1 according to the present invention can be embodied such that the amount of mixed process gas in the chamber 100 can be increased by increasing the flow rates of the first gas and the second gas reaching the chamber 100. Therefore, the substrate processing apparatus 1 according to the present invention can increase the mass productivity of the substrates (S) that have been subjected to the above processing steps.

[0047] Third, the substrate processing apparatus 1 according to the present invention is embodied such that a process gas having a low vapor pressure reaches the chamber 100 by a carrier gas with a high flow rate, and a process gas having a high vapor pressure reaches the chamber 100 by a carrier gas with a low flow rate. As a result, the substrate processing apparatus 1 according to the present invention can reduce the flow rate deviation of the process gas reaching the chamber 100 by the carrier gas. Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the process gas involved in the above processing steps.

[0048] The lengths of the dotted arrows and the dashed arrows shown in FIG. 2 diagrammatically indicate the approximate magnitudes of the flow rates of the first carrier gas and the second carrier gas, respectively.

[0049] 1 and 2, the second carrier supply unit 6 may include a second control module 61. The second control module 61 adjusts the flow rate of the second carrier gas. The second control module 61 may be disposed at an outlet side of the second carrier supply unit 6. The second control module 61 may adjust the flow rate of the second carrier gas to adjust the flow force of the second gas. The second control module 61 may be generally embodied as a valve.

[0050] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a third carrier supply unit 7. As shown in FIG.

[0051] The third carrier supply unit 7 supplies a third carrier gas to the third gas supply unit 4. The third carrier gas may be a gas for increasing the flow force of the third gas. The third carrier gas may increase the distance over which the third gas can flow by pushing the third gas toward the chamber 100. The third carrier gas may be any one gas selected from N2, Ar, He, and Ne. The third carrier gas may be the same gas as the second carrier gas. The third carrier supply unit 7 may be connected to the third gas supply unit 4. The solid arrows shown in FIG. 2 are schematic diagrams showing the general flow direction of the third carrier gas.

[0052] The third carrier supplier 7 may be connected to the third gas supplier 4 while being spaced apart from the chamber 100. The third carrier supplier 7 may store the third carrier gas and supply the third carrier gas to the third gas supplier 4. The third carrier supplier 7 may be spaced apart from the chamber 100 at a shorter distance than the second carrier supplier 6.

[0053] The third carrier supply unit 7 can supply the third carrier gas such that the third carrier gas is supplied to the third gas supply unit 4 at a flow rate smaller than that of the second carrier gas. That is, the second carrier gas can flow at a flow rate larger than that of the third carrier gas. The length of the solid arrow shown in FIG. 2 is a schematic representation of the approximate flow rate of the third carrier gas.

[0054] 1 and 2, the third carrier supply unit 7 may include a third control module 71. The third control module 71 adjusts the flow rate of the third carrier gas. The third control module 71 may be disposed at an outlet side of the third carrier supply unit 7. The third control module 71 may adjust the flow rate of the third carrier gas to adjust the flow force of the third gas. The third control module 71 may be generally embodied as a valve.

[0055] 1 and 2, a substrate processing apparatus 1 according to the present invention can include a first gas flow path 8 and a second gas flow path 9. In the embodiment shown in FIG.

[0056] The first gas passage 8 is connected to the first gas supply unit 2. The first gas passage 8 may be implemented as a pipe through which the first gas and the first carrier gas flow. The first gas passage 8 may be formed to have a circular cross-sectional area in a direction perpendicular to a direction in which the first gas and the first carrier gas flow.

[0057] The second gas passage 9 is connected to the second gas supply unit 3. The second gas passage 9 may be implemented as a pipe through which the second gas and the second carrier gas flow. The second gas passage 9 may be formed to have a circular cross-sectional area in a direction perpendicular to a direction in which the second gas and the second carrier gas flow.

[0058] The second gas passage 9 may be spaced apart from the first gas passage 8. The second gas passage 9 may be disposed closer to the chamber 100 than the first gas passage 8. That is, the first gas passage 8 through which the first carrier gas flows may be spaced farther from the chamber 100 than the second gas passage 9 through which the second carrier gas flows. The second gas passage 9 may be formed to have the same length as the first gas passage 8.

[0059] The second gas passage 9 may be formed to have a smaller area than the first gas passage 8. As a result, the substrate processing apparatus 1 according to the present invention may be embodied such that the first carrier gas flows at a larger flow rate than the second carrier gas.

[0060] 1 and 2, the substrate processing apparatus 1 according to the present invention may further include a third gas flow path 10. As shown in FIG.

[0061] The third gas passage 10 is connected to the third gas supply unit 4. The third gas passage 10 may be implemented as a pipe through which the third gas and the third carrier gas flow. The third gas passage 10 may be formed to have a circular cross-sectional area in a direction perpendicular to a direction in which the third gas and the third carrier gas flow.

[0062] The third gas flow passage 10 may be separated from each of the second gas flow passage 9 and the first gas flow passage 8. The third gas flow passage 10 may be disposed closer to the chamber 100 than the second gas flow passage 9. That is, the second gas flow passage 9 through which the second carrier gas flows may be separated farther from the chamber 100 than the third gas flow passage 10 through which the third carrier gas flows. The third gas flow passage 10 may be formed to have the same length as the second gas flow passage 9.

[0063] The third gas passage 10 may be formed to have a smaller area than the second gas passage 9. As a result, the substrate processing apparatus 1 according to the present invention may be embodied such that the second carrier gas flows at a larger flow rate than the third carrier gas.

[0064] 2 and 3, the substrate processing apparatus 1 according to the present invention may be embodied to adjust the flow rates of the first carrier gas and the first gas (hereinafter referred to as the "first gas"), the second carrier gas and the second gas (hereinafter referred to as the "second gas"), and the third carrier gas and the third gas (hereinafter referred to as the "third gas"). To this end, the first gas supply unit 2 and the second gas supply unit 3 may each include the following configuration.

[0065] The first gas supply unit 2 may include a first injection member 21 and a first injection hole 22 .

[0066] The first injection member 21 injects the first gas into the chamber 100. The first injection member 21 can be connected to each of the first gas supply unit 2 and the first gas flow path 8. The first gas stored in the first gas supply unit 2 can be injected into the first gas flow path 8 through the first injection member 21.

[0067] The first injection hole 22 is formed in the first injection member 21. The first injection hole 22 may be formed to penetrate the first injection member 21. The first gas may be injected into the first gas flow passage 8 through the first injection hole 22. The first injection hole 22 may be formed in the first injection member 21 such that the area thereof is adjustable.

[0068] The second gas supply unit 3 may include a second injection member 31 and a second injection hole 32 .

[0069] The second injection member 31 injects the second gas into the chamber 100. The second injection member 31 may be connected to each of the second gas supply unit 3 and the second gas flow path 9. The second gas stored in the second gas supply unit 3 may be injected into the second gas flow path 9 via the second injection member 31. The second injection member 31 may be disposed closer to the chamber 100 than the first injection member 21.

[0070] The second injection hole 32 is formed in the second injection member 31. The second injection hole 32 may be formed to penetrate the second injection member 31. The second gas may be injected into the second gas flow passage 9 through the second injection hole 32. The second injection hole 32 may be formed in the second injection member 31 such that an area of ​​the second injection hole 32 is adjustable. The second injection hole 32 may be disposed closer to the chamber 100 than the first injection hole 22.

[0071] The second injection hole 32 may be formed to be smaller than the first injection hole 22. As a result, the substrate processing apparatus 1 according to the present invention may be embodied such that the first gas flows at a larger flow rate than the second gas.

[0072] The third gas supply unit 4 may include a third injection member 41 and a third injection hole (not shown).

[0073] The third injection member 41 injects the third gas into the chamber 100. The third injection member 41 may be connected to each of the third gas supply unit 4 and the third gas flow path 10. The third gas stored in the third gas supply unit 4 may be injected into the third gas flow path 10 via the third injection member 41. The third injection member 41 may be disposed closer to the chamber 100 than the second injection member.

[0074] The third injection hole is formed in the third injection member 41. The third injection hole may be formed penetrating the third injection member 41. The third gas may be injected into the third gas flow passage 10 through the third injection hole. The third injection hole may be formed in the third injection member 41 such that an area of ​​the third injection hole is adjustable. The third injection hole may be disposed closer to the chamber 100 than the second injection hole.

[0075] The third injection hole may be smaller than the second injection hole, so that the substrate processing apparatus 1 according to the present invention may be embodied such that the second gas flows at a larger flow rate than the third gas.

[0076] 1 to 5, a substrate processing apparatus 1 according to the present invention can include a common flow path 11.

[0077] The common flow path 11 is connected to each of the first gas flow path 8, the second gas flow path 9, and the chamber 100. When the substrate processing apparatus 1 according to the present invention further includes the third gas flow path 10, the common flow path 11 may be connected to each of the first gas flow path 8, the second gas flow path 9, the third gas flow path 10, and the chamber 100. The common flow path 11 may be embodied as piping through which the first gas, the first carrier gas, the second gas, the second carrier gas, the third gas, and the third carrier gas flow.

[0078] 2 to 5, the common flow path 11 can include the first common flow path 111, the second common flow path 112, and a third common flow path 113.

[0079] The first common flow path 111 is connected to the first gas flow path 8. The first common flow path 111 may be connected to each of the first gas flow path 8 and the second common flow path 112. The first common flow path 111 may be embodied as a pipe through which the first gas and the first carrier gas flow. The first carrier gas supplied from the first carrier supply unit 5 may flow in sequence through the first gas supply unit 2, the first gas flow path 8, the first common flow path 111, the second common flow path 112, and the third common flow path 113, and may be supplied to the chamber 100. The dotted arrows shown in FIG. 4 are schematic diagrams showing the general flow direction of the first carrier gas. The first gas supplied from the first gas supply unit 2 may flow in sequence through the first gas flow path 8, the first common flow path 111, the second common flow path 112, and the third common flow path 113, and may be supplied to the chamber 100.

[0080] A first connection point CP1 may be formed at a portion where the first common flow passage 111 and the first gas flow passage 8 are connected. The first connection point CP1 may be a part of the common flow passage 11 where the flow direction of the first carrier gas and the first gas changes, as shown in FIG.

[0081] The second common flow path 112 is connected to the second gas flow path 9. The second common flow path 112 may be connected to each of the second gas flow path 9, the first common flow path 111, and the third common flow path 113. The second common flow path 112 may be embodied as a pipe through which the second gas and the second carrier gas flow. The second carrier gas supplied from the second carrier supply unit 6 may flow through the second gas supply unit 3, the second gas flow path 9, the second common flow path 112, and the third common flow path 113 in order and be supplied to the chamber 100. The dashed arrow in FIG. 4 is a schematic diagram showing the general flow direction of the second carrier gas. The second gas supplied from the second gas supply unit 3 may flow through the second gas flow path 9, the second common flow path 112, and the third common flow path 113 in order and be supplied to the chamber 100.

[0082] 4 and 5, the substrate processing apparatus 1 according to the present invention may be embodied such that the first carrier gas flows sequentially through the first common flow passage 111 and the second common flow passage 112. Therefore, the first common flow passage 111 may be spaced farther from the chamber 100 than the second common flow passage 112. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that the first carrier gas increases the flow force of the second gas, as compared with a comparative example in which the first carrier gas does not flow sequentially through the first common flow passage 111 and the second common flow passage 112. This will be described in detail with reference to the accompanying drawings as follows.

[0083] First, FIG. 5 shows a comparative example in which the first carrier gas does not flow through the first common flow passage 111 and the second common flow passage 112 in sequence. In the comparative example, the flow direction of the first carrier gas and the flow direction of the second carrier gas may be opposite to each other. As a result, in the comparative example, the first carrier gas at a relatively high flow rate may flow back and permeate the second common flow passage 112, thereby pushing the second carrier gas toward the second gas supply unit 3. Therefore, in the comparative example, the degree to which the second carrier gas increases the distance over which the second gas can flow may be reduced. In addition, in the comparative example, the first carrier gas flows in the opposite direction to the flow direction of the second gas, so the amount of the second gas that reaches the chamber 100 due to the first carrier gas may be reduced. Therefore, in the comparative example, the amount of the second gas involved in the processing process may be reduced. The length of the dotted arrow and the length of the dashed arrow shown in FIG. 5 are schematic diagrams showing the magnitude of the flow rates of the first carrier gas and the second carrier gas.

[0084] Next, FIG. 4 illustrates an embodiment in which the first carrier gas flows through the first common flow passage 111 and the second common flow passage 112 in sequence. In the embodiment, the flow direction of the first carrier gas may be the same as the flow direction of the second carrier gas. Thus, in the embodiment, the first carrier gas at a relatively high flow rate may replenish the second carrier gas and push the second gas toward the chamber 100. Also, in the comparative example, the flow directions of the first carrier gas and the second gas are the same in the second common flow passage 112. Thus, in the embodiment, the first carrier gas may be embodied to increase the distance over which not only the first gas but also the second gas can flow. Thus, in the embodiment, the amount of the process gas mixed in the chamber 100 may be increased by increasing the amount of the second gas involved in the process. The length of the dotted arrow and the length of the dashed arrow illustrated in FIG. 4 are schematic representations of the magnitude of the flow rates of the first carrier gas and the second carrier gas.

[0085] The second common flow path 112 and the first common flow path 111 may be formed to extend in the same direction. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that the flow path of the first carrier gas does not change within the common flow path 11. Figure 4 illustrates a schematic diagram of the second common flow path 112 and the first common flow path 111 being linearly connected to each other.

[0086] The second common flow path 112 may be formed to be longer than the first common flow path 111. As a result, the substrate processing apparatus 1 according to the present invention may increase the flow force of the second gas by the first carrier gas by increasing the flow time of the first carrier gas in the second common flow path 112. The second common flow path 112 may be formed to have the same length as the first common flow path 111.

[0087] A second connection point (CP2) may be formed at a portion where the second common flow passage 112 and the second gas flow passage 9 are connected. The second connection point (CP2) corresponds to a point where the flow directions of the second carrier gas and the second gas change, as shown in Fig. 4, and may be a part of the common flow passage 11 where the second carrier gas and the second gas and the first carrier gas and the first gas join together. Since the substrate processing apparatus 1 according to the present invention has a larger flow rate of the first carrier gas than the second carrier gas, it may be possible to implement a prevention force that prevents the second carrier gas from diffusing and permeating from the second connection point (CP2) to the first connection point (CP1).

[0088] The second connection point (CP2) may be disposed away from the first connection point (CP1). The second connection point (CP2) may be disposed closer to the chamber 100 than the first connection point (CP1). The first carrier gas may flow sequentially through the first connection point (CP1) and the second connection point (CP2).

[0089] The third common flow path 113 is connected to the third gas flow path 10. The third common flow path 113 may be connected to each of the second common flow path 112, the third gas flow path 10, and the chamber 100. The third common flow path 113 may be embodied as a pipe for flowing the third gas and the third carrier gas. The third carrier gas supplied from the third carrier supply unit 7 may flow through the third gas supply unit 4, the third gas flow path 10, and the third common flow path 113 in order and be supplied to the chamber 100. The solid arrows shown in FIG. 2 are schematic diagrams showing the general flow direction of the third carrier gas. The third gas supplied from the third gas supply unit 4 may flow through the third gas flow path 10 and the third common flow path 113 in order and be supplied to the chamber 100.

[0090] 2, the substrate processing apparatus 1 according to the present invention may be embodied such that the first carrier gas flows through the first common flow passage 111, the second common flow passage 112, and the third common flow passage 113 in sequence. Thus, the first common flow passage 111 may be disposed farther away from the chamber 100 than the second common flow passage 112, and the second common flow passage 112 may be disposed farther away from the chamber 100 than the third common flow passage 113. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that the first carrier gas increases the flow force of the second gas and the third gas, as compared with a comparative example in which the first carrier gas does not flow through the first common flow passage 111, the second common flow passage 112, and the third common flow passage 113 in sequence. Thus, the substrate processing apparatus 1 according to the present invention may increase the amount of the process gas mixed in the chamber 100 by increasing the amount of the second gas and the third gas involved in the processing step.

[0091] The third common flow path 113, the second common flow path 112, and the first common flow path 111 may be formed to extend in the same direction as each other. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that a flow path of the first carrier gas does not change within the common flow path 11. The third common flow path 113, the second common flow path 112, and the first common flow path 111 may be linearly connected to each other.

[0092] The third common channel 113 may be formed to be longer than each of the second common channel 112 and the first common channel 111. The third common channel 113, the second common channel 112, and the first common channel 111 may all be formed to have the same length.

[0093] A third connection point (CP3) may be formed at a portion where the third common flow passage 113 and the third gas flow passage 10 are connected. The third connection point (CP3) corresponds to a point where the flow directions of the third carrier gas and the third gas change, as shown in FIG. 2, and may be a part of the common flow passage 11 where the third carrier gas and the third gas, the second carrier gas and the second gas, and the first carrier gas and the first gas join together. In the substrate processing apparatus 1 according to the present invention, since the first carrier gas and the second carrier gas each have a larger flow rate than the third carrier gas, it is possible to implement a prevention force that prevents the third carrier gas from diffusing and permeating from the third connection point (CP3) to the second connection point (CP2).

[0094] The third connection point (CP3) may be disposed away from each of the second connection point (CP2) and the first connection point (CP1). The third connection point (CP3) may be disposed closer to the chamber 100 than the second connection point (CP2). The first carrier gas may flow through the first connection point (CP1), the second connection point (CP2), and the third connection point (CP3) in sequence.

[0095] In the above, the substrate processing apparatus 1 according to the present invention has been described based on the assumption that it includes three gas supply units and three carrier supply units, but this is merely an example, and the substrate processing apparatus 1 according to the present invention may include four or more gas supply units and four or more carrier supply units.

[0096] Therefore, the substrate processing apparatus 1 according to the present invention may include N (N is an integer of 3 or more) gas supply units for supplying process gases having different vapor pressures to the chamber 100, and N carrier supply units for supplying carrier gas to each of the gas supply units so as to increase the flow force of the process gas. Among the gas supply units, the first gas supply unit 20 may supply a first gas having a lower vapor pressure to the chamber 100 compared to the second gas supply unit 20' among the gas supply units, and may be separated from the chamber 100 by a longer distance compared to the second gas supply unit 3. Among the carrier supply units, the first carrier supply unit 30 may supply a first carrier gas having a larger flow rate to the first gas supply unit 20 compared to the second carrier supply unit 30' among the carrier supply units.

[0097] 6 shows an embodiment in which the substrate processing apparatus 1 according to the present invention includes four gas supply units 20, 20', 20'', 20''', and four carrier supply units 30, 30', 30'', 30'''. In this case, the substrate processing apparatus 1 according to the present invention includes four gas flow paths 40, 40', 40'', 40''' connected to the gas supply units 20, 20', 20'', 20'''', respectively, and one common flow path 50 connected to the gas flow paths 40, 40', 40'', 40'''.

[0098] The present invention described above is not limited to the above-mentioned embodiments and the attached drawings, and it will be apparent to those skilled in the art to which the present invention pertains that multiple substitutions, modifications and alterations are possible within the scope of the technical idea of ​​the present invention.

Claims

1. a chamber for providing a process space for the substrate; a first gas supply for supplying a first gas having a first vapor pressure to the chamber; a second gas supply for supplying a second gas having a second vapor pressure greater than the first vapor pressure to the chamber; and a third gas supply unit for supplying a third gas having a third vapor pressure greater than the second vapor pressure to the chamber; a length of a gas flow passage connecting the first gas supply unit to the chamber is longer than a length of a gas flow passage connecting the second gas supply unit to the chamber; a length of a gas flow passage connecting the second gas supply unit to the chamber is longer than a length of a gas flow passage connecting the third gas supply unit to the chamber. Substrate processing equipment.

2. a substrate support disposed in a process space inside the chamber to support a substrate; and 2. The substrate processing apparatus according to claim 1, further comprising a gas injection unit that injects a process gas from an upper portion of the processing space toward the substrate support unit.

3. the first gas contains indium; the second gas contains zinc; 3. The substrate processing apparatus according to claim 1, wherein the third gas contains gallium.

4. a first gas supply unit for supplying a first gas to a chamber providing a process space for the substrate; a second gas supply for supplying a second gas having a greater vapor pressure than the first gas to the chamber; a first carrier supply unit that supplies a first carrier gas to the first gas supply unit so that a flow force of the first gas is increased; a second carrier supply unit that supplies a second carrier gas to the second gas supply unit so that a flow force of the second gas is increased; a first gas flow path connected to the first gas supply unit; and a second gas passage connected to the second gas supply unit; The first carrier supply unit supplies the first carrier gas such that the first carrier gas is supplied to the first gas supply unit at a flow rate greater than that of the second carrier gas; the first gas supply unit is spaced from the chamber by a distance greater than a distance the second gas supply unit is spaced from the chamber; The first gas flow passage is formed to have a larger area than the second gas flow passage so that the first carrier gas flows at a larger flow rate than the second carrier gas. Gas supply device for substrate processing equipment.

5. the first gas supply unit includes a first injection member for injecting the first gas and the first carrier gas into the chamber, and a first injection hole formed in the first injection member; the second gas supply unit includes a second injection member for injecting the second gas and the second carrier gas into the chamber, and a second injection hole formed in the second injection member; 5. The gas supply apparatus for a substrate processing apparatus according to claim 4, wherein the first injection hole is larger than the second injection hole.

6. N (N is an integer of 3 or more) gas supply units supplying process gases having different vapor pressures to a chamber providing a process space for the substrate; and N carrier supply units for supplying a carrier gas to each of the gas supply units so that the flow force of the process gas is increased; a first gas supply among the gas supply units supplies a first gas having a lower vapor pressure to the chamber than a second gas supply among the gas supply units, but is spaced a greater distance from the chamber than the second gas supply unit; a first carrier supply unit among the carrier supply units supplying a first carrier gas having a larger flow rate to the first gas supply unit than a second carrier supply unit among the carrier supply units.

7. 5. The gas supply device for a substrate processing apparatus according to claim 4, wherein the first gas flow passage is disposed farther from the chamber than the second gas flow passage.

8. a first gas flow path connected to the first gas supply unit; and a second gas passage connected to the second gas supply unit, 7. The gas supply device for a substrate processing apparatus according to claim 6, wherein the first gas flow passage is disposed farther from the chamber than the second gas flow passage.

9. 7. The gas supply apparatus for a substrate processing apparatus according to claim 4, wherein the first carrier supply unit includes a first control module that adjusts a flow rate of the first carrier gas.

10. a common flow path connected to each of the first gas flow path, the second gas flow path, and the chamber; 5. The gas supply device for a substrate processing apparatus according to claim 4, wherein the common flow passage includes a first common flow passage connected to the first gas flow passage, and a second common flow passage connected to the second gas flow passage.

11. a first gas flow passage connected to the first gas supply unit; a second gas flow path connected to the second gas supply; and a common flow path connected to each of the first gas flow path, the second gas flow path, and the chamber; 7. The gas supply device for a substrate processing apparatus according to claim 6, wherein the common flow passage includes a first common flow passage connected to the first gas flow passage, and a second common flow passage connected to the second gas flow passage.

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