Electronic component, electronic circuit, and method for manufacturing electronic component

Abstract

To provide an electronic component which can reduce a mounting area, an electronic circuit and a method for manufacturing the electronic component.SOLUTION: An electronic component 1 comprises a capacitor element 7, and an inductor element 2 electrically connected to the capacitor element. The capacitor element has: a first electrode part 71 extending between a first principal face 5a and a second principal face 5b in a direction crossing the first principal face, and located on a side of a substrate 5; a second electrode part 72 extending between the first and second principal faces in a direction crossing the first principal face, and opposed to the first electrode part in a direction parallel with the first principal face; and a first dielectric part 74 located between the first and second electrode parts. The inductor element has: an elemental body 10 having a third principal face 10a located on a side opposite to the substrate, and including a magnetic material; an inductor wire 21 provided in the elemental body, and extending in a direction parallel with the first principal face; and vertical wires 51-56 provided in the elemental body, connected to an end of the inductor wire and extending to the third principal face.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to electronic components, electronic circuits, and methods for manufacturing electronic components. [Background technology]

[0002] Conventionally, an electronic component is described in JP 2020-107880 A (Patent Document 1). The electronic component has a magnetic layer, a non-magnetic substrate, and an inductor and a capacitor disposed between the non-magnetic substrate and the magnetic layer. The inductor and the capacitor are disposed on the upper surface of the magnetic layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-107880 A Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional electronic components, the inductor and capacitor are arranged on the same plane, so when the lower surface side of the magnetic layer is mounted on a mounting board, there is a problem that the mounting area becomes large.

[0005] In view of the above, an object of the present disclosure is to provide an electronic component, an electronic circuit, and a method for manufacturing an electronic component that can reduce the mounting area. [Means for solving the problem]

[0006] In order to solve the above problems, an electronic component according to one aspect of the present disclosure comprises: a substrate having a first main surface and a second main surface opposed to each other and containing silicon elements; A capacitor element provided on the first main surface side of the substrate; an inductor element provided on the first main surface or the second main surface of the substrate in a direction perpendicular to the first main surface with respect to the capacitor element and electrically connected to the capacitor element; Equipped with The capacitor element is a first electrode portion extending in a direction intersecting the first main surface between the first main surface and the second main surface and positioned on the substrate side; a second electrode portion extending between the first principal surface and the second principal surface in a direction intersecting the first principal surface and facing the first electrode portion in a direction parallel to the first principal surface; a dielectric portion located between the first electrode portion and the second electrode portion; having The inductor element is an element body including a magnetic material and having a third main surface located opposite to the substrate; an inductor wiring provided within the element body and extending in a direction parallel to the first main surface; a vertical wiring provided within the element body, connected to an end of the inductor wiring and extending to the third main surface; having The inductor wiring has a thickness greater than a thickness of the second electrode portion.

[0007] Here, "on the main surface" does not mean an absolute direction such as vertically upward as determined by the direction of gravity, but rather means the direction toward the outside of the substrate between the outside and inside of the substrate bounded by the main surface. Therefore, "on the main surface" is a relative direction determined by the orientation of the main surface. Furthermore, "on" an element includes not only a position directly above the element (on) but also a position above the element, i.e., a position above the element through another object or a position above the element with a gap (above).

[0008] "The capacitor element is provided on the first main surface side of the substrate" means that the capacitor element is provided inside the substrate relative to the first main surface of the substrate, and the capacitor element may be partially located outside the substrate relative to the first main surface of the substrate.

[0009] The "thickness of the inductor wiring" refers to the length in a direction perpendicular to the first main surface. The "thickness of the second electrode portion" refers to the thickness of the second electrode portion in a direction perpendicular to the main surface of the film, if the second electrode portion is in a film form.

[0010] According to this aspect, the inductor element and the capacitor element are provided on different layers. Therefore, when the electronic component is mounted on a main surface parallel to the first main surface, the mounting area of ​​the electronic component can be reduced.

[0011] In addition, the inductor wiring can be made thicker, which reduces resistance and improves the efficiency of obtaining inductance. On the other hand, the second electrode can be made thinner, which prevents the electronic component from becoming larger, and the capacitance of the capacitor can be increased by stacking multiple first and second electrodes in a direction parallel to the first main surface.

[0012] Preferably, in one embodiment of the electronic component, Further, a shield layer is provided between the capacitor element and the inductor element, The shield layer includes a shield conductor layer extending in a direction parallel to the first main surface.

[0013] According to the embodiment, when a magnetic flux passes through a capacitor element, it fluctuates the electric field of the capacitor element. However, since the shield conductor layer is provided, it is possible to suppress the impedance from fluctuating.

[0014] Preferably, in one embodiment of the electronic component, the inductor wiring has a thickness greater than a thickness of the shield conductor layer.

[0015] According to the embodiment, the thickness of the inductor wiring, through which a larger DC current flows than the shield conductor layer, is made sufficiently thick, thereby making it possible to reduce the DC resistance.

[0016] Preferably, in one embodiment of the electronic component, a connection layer between the capacitor element and the inductor element, the connection layer connecting the capacitor element and the inductor element; the connection layer includes a connection conductor layer extending in a direction parallel to the first main surface, The connecting conductor layer does not make more than one turn.

[0017] According to the above embodiment, the connecting conductor layer can be minimized, so that the area (volume) occupied by the capacitor element and the inductor element can be relatively increased, and the circuit constants of the capacitor element and the inductor element can be obtained.

[0018] Preferably, in one embodiment of the electronic component, the inductor wiring has a thickness greater than a thickness of the connecting conductor layer.

[0019] According to the embodiment, the thickness of the inductor wiring, through which a larger DC current flows than the connecting conductor layer, is made sufficiently thick, thereby making it possible to reduce the DC resistance.

[0020] Preferably, in one embodiment of the electronic component, the capacitor element has a vertical wiring that is connected to the first electrode portion or the second electrode portion, extends through the body to the third main surface, and is not connected to the inductor wiring.

[0021] According to the embodiment, it is possible to obtain the circuit constants of only the capacitor elements.

[0022] Preferably, in one embodiment of the electronic component, the thickness of the inductor wiring is ten times or more the thickness of the second electrode portion.

[0023] According to the embodiment, the thickness of the inductor wiring, through which a larger DC current flows than the second electrode portion, is made sufficiently thick, thereby making it possible to further reduce the DC resistance. Also, since the thickness of the second electrode portion can be made sufficiently thin, it is possible to suppress an increase in the size of the electronic component, and to further increase the capacitance of the capacitor by stacking a plurality of first electrode portions and a plurality of second electrode portions in a direction parallel to the first main surface.

[0024] In one embodiment of the electronic component, a composition of the inductor wiring is preferably different from a composition of each of the first electrode portion and the second electrode portion.

[0025] According to the above embodiment, it is possible to select an appropriate material based on ease of manufacturing and element characteristics. For example, by using aluminum or impurity-doped polysilicon for the electrode portion, it is possible to improve the capacitance by microfabrication. In addition, by using silver or copper for the inductor wiring, it is possible to suppress heat generation when a direct current flows.

[0026] Preferably, in one embodiment of the electronic component, the capacitor element has a thickness of 100 μm or less, the inductor element has a thickness of 200 μm or less, and the electronic component has a thickness of 300 μm or less.

[0027] Here, the thickness of each member is the length of the outer surface of each member in a direction perpendicular to the first main surface.

[0028] According to the embodiment, the electronic component can be made thinner.

[0029] Preferably, in one embodiment of the electronic component, there are a plurality of at least one of the capacitor elements and the inductor elements.

[0030] According to the embodiment, the characteristics of the electronic component can be adjusted.

[0031] Preferably, in one embodiment of the electronic component, a connection layer between the capacitor element and the inductor element, the connection layer connecting the capacitor element and the inductor element; The connection layer includes a first end face on the inductor element side and a second end face on the capacitor element side, and has vertical wiring extending in a direction perpendicular to the first main surface, and an area of ​​the first end face is larger than an area of ​​the second end face.

[0032] According to the embodiment, it is possible to reduce the electrical resistance on the inductor element side of the vertical wiring, through which a larger direct current flows than on the capacitor element side of the vertical wiring.

[0033] Preferably, in one embodiment of the electronic component, the substrate has a groove portion on the first main surface side into which the second electrode portion is inserted, The inductor element is located on the opposite side of the substrate to the opening of the groove.

[0034] According to the embodiment, the capacitor element and the inductor element can be separated, and interference between the capacitor element and the inductor element can be reduced.

[0035] Preferably, in one embodiment of the electronic component, the substrate has a groove portion on the first main surface side into which the second electrode portion is inserted, The inductor element is located on the opening side of the groove with respect to the substrate.

[0036] According to the embodiment, since the opening side of the groove of the capacitor element has an uneven shape, the inductor element is positioned on the opening side of the groove with respect to the substrate, so that the contact area between the capacitor element and the inductor element can be increased, and the mechanical strength between the elements can be improved. For example, peeling between the elements due to thermal stress such as reflow load can be suppressed.

[0037] Preferably, in one embodiment of the electronic component, the substrate has a groove portion on the first main surface side into which the second electrode portion is inserted, When viewed from a direction perpendicular to the first main surface, the shape of the first main surface of the substrate excluding the groove portion is made up of a plurality of polygons, and each of the polygons has six or more vertices.

[0038] Here, the term "polygon" includes polygons that are convex on the outside and polygons that are concave on the inside. The term "vertex" includes the intersection of two straight lines, a point on a curved surface that has been chamfered with a radius, and a bending point on a concave surface.

[0039] According to the embodiment, the surface area of ​​the remaining portion of the substrate excluding the groove portion can be increased, and the surface area of ​​the first electrode portion can be increased, thereby increasing the capacitance of the capacitor element.

[0040] Preferably, in one embodiment of the electronic component, the first electrode portion is a porous metal layer provided on the first principal surface or the second principal surface, the porous metal layer has pores extending in a direction intersecting the first main surface, The dielectric portion is provided on an inner surface of the hole, The second electrode portion is laminated to the dielectric portion.

[0041] According to the embodiment, since the porous metal layer is provided, the surface areas of the first electrode portion and the dielectric portion can be increased, and the capacitance of the capacitor element can be increased.

[0042] Preferably, in one embodiment of the electronic component, the electrical resistivity of the substrate is 1 Ω·cm or less.

[0043] According to the embodiment, by lowering the electrical resistivity of the substrate, the substrate itself can be used as the ground, and the stability of the ground can be improved.

[0044] Preferably, in one embodiment of the electronic component, In a cross section perpendicular to an extension direction of the inductor wiring, the inductor wiring has a top surface and a bottom surface parallel to the first main surface, and two side surfaces perpendicular to the first main surface; At least one of the top and bottom surfaces and two side surfaces perpendicular to the first main surface are in contact with the element body.

[0045] According to the embodiment, the volume of the element body can be increased, and the inductance can be improved.

[0046] Preferably, in one embodiment of the electronic circuit, The electronic component; a switching element electrically connected to the inductor element; a ground electrically connected to the capacitor element; a load element electrically connected to the inductor element and the capacitor element; Equipped with.

[0047] According to the embodiment, a small DC-DC converter can be provided.

[0048] Preferably, in one embodiment of the method for manufacturing an electronic component, providing a substrate having a first main surface and a second main surface opposed to each other and including silicon elements; forming a capacitor element on the substrate using an inorganic material; forming an inductor element on the first principal surface or the second principal surface in a layer different from that of the capacitor element using an organic material; Equipped with The step of forming the capacitor element is followed by the step of forming the inductor element.

[0049] According to the embodiment, since the inductor element and the capacitor element are provided on different layers, the mounting area of ​​the electronic component can be reduced.

[0050] In addition, the capacitor element is first formed using inorganic materials that remain even after firing, and then the inductor element is formed using organic materials that dissipate due to heat, so no unnecessary thermal load is applied to the inductor element, making it possible to manufacture electronic components with improved quality. Effect of the Invention

[0051] According to the electronic component, electronic circuit, and method for manufacturing an electronic component that are one aspect of the present disclosure, the mounting area can be reduced. [Brief description of the drawings]

[0052] [Figure 1] FIG. 1 is a plan view showing a first embodiment of an electronic component. [Diagram 2] 2 is a cross-sectional view taken along line AA in FIG. 1. [Diagram 3] 1 is an equivalent circuit diagram of a first embodiment of an electronic component. [Figure 4A] FIG. 2 is a plan view seen from the first main surface side of the substrate. [Figure 4B] FIG. 11 is a plan view of another substrate as viewed from the first main surface side. [Diagram 5] FIG. 3 is an enlarged view of a portion of FIG. [Figure 6A] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6B] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6C] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6D] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6E] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6F] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6G] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6H] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6I] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6J] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6K] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6L] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6M] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6N] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6O] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6P] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 6Q] FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electronic component. [Figure 7] FIG. 4 is a cross-sectional view showing a second embodiment of the electronic component. [Figure 8] FIG. 5 is an equivalent circuit diagram of a second embodiment of the electronic component. [Figure 9] FIG. 11 is a cross-sectional view showing a third embodiment of the electronic component. [Figure 10] FIG. 11 is an equivalent circuit diagram of a third embodiment of the electronic component. [Figure 11] FIG. 11 is a cross-sectional view showing a fourth embodiment of the electronic component. [Figure 12] FIG. 2 is a schematic diagram illustrating an embodiment of an electronic circuit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0053] Hereinafter, an electronic component, an electronic circuit, and a method for manufacturing an electronic component according to one aspect of the present disclosure will be described in detail with reference to the embodiments shown in the drawings. Note that the drawings include some schematic views and may not reflect actual dimensions or ratios.

[0054] First Embodiment [Summary configuration] Fig. 1 is a plan view showing a first embodiment of the electronic component. Fig. 2 is a cross-sectional view taken along line AA in Fig. 1. Fig. 3 is an equivalent circuit diagram of the first embodiment of the electronic component. As shown in Figs. 1, 2 and 3, the electronic component 1 includes a substrate 5, a capacitor element 7, and an inductor element 2.

[0055] The substrate 5 contains silicon elements. The substrate 5 has a first main surface 5a and a second main surface 5b facing each other. The capacitor element 7 is provided on the first main surface 5a side of the substrate 5. The inductor element 2 is provided on the first main surface 5a of the substrate 5 in a direction perpendicular to the first main surface 5a relative to the capacitor element 7, and is electrically connected to the capacitor element 7. The inductor element 2 is located on the capacitor element 7. In FIG. 1, the inductor element 2 and the capacitor element 7 each roughly indicate an area surrounded by a double-dashed line frame.

[0056] The capacitor element 7 has a first electrode portion 71, a second electrode portion 72, and a first dielectric portion 74. The first electrode portion 71 extends between the first main surface 5a and the second main surface 5b in a direction intersecting the first main surface 5a, and is located on the substrate 5 side. The second electrode portion 72 extends between the first main surface 5a and the second main surface 5b in a direction intersecting the first main surface 5a, and faces the first electrode portion 71 in a direction parallel to the first main surface 5a. The first dielectric portion 74 is located between the first electrode portion 71 and the second electrode portion 72. The capacitor element 7 is provided on the inner side of the substrate 5 relative to the first main surface 5a of the substrate 5, and the capacitor element 7 is partially present on the outer side of the substrate 5 relative to the first main surface 5a of the substrate 5.

[0057] The inductor element 2 has an element body 10, an inductor wiring 21, a first vertical wiring 51, and a second vertical wiring 52. The element body 10 includes a magnetic material. The element body 10 has a third main surface 10a located on the side opposite the substrate 5. The inductor wiring 21 is provided within the element body 10 and extends in a direction parallel to the first main surface 5a. The first vertical wiring 51 and the second vertical wiring 52 are each provided within the element body 10, connected to an end of the inductor wiring 21, and extending to the third main surface 10a.

[0058] The thickness t21 of the inductor wiring 21 is thicker than the thickness t72 of the second electrode portion 72. The thickness t21 of the inductor wiring 21 refers to the length in a direction perpendicular to the first main surface 5a. Because the second electrode portion 72 is in the form of a film, the thickness t72 of the second electrode portion 72 refers to the film thickness in a direction perpendicular to the main surface of the film.

[0059] According to the above configuration, since the inductor element 2 and the capacitor element 7 are provided on different layers, the mounting area of ​​the electronic component 1 can be reduced by mounting the electronic component 1 on a principal surface parallel to the first principal surface 5a as a mounting surface. The mounting surface is the third principal surface 10a side.

[0060] In addition, since the thickness t21 of the inductor wiring 21 can be increased, the resistance can be reduced and the efficiency of obtaining inductance can be improved. Meanwhile, since the thickness t72 of the second electrode portion 72 can be decreased, the capacitance of the capacitor can be increased by stacking the first electrode portion 71 and the second electrode portion 72 in a direction parallel to the first main surface 5a while preventing the electronic component 1 from becoming large.

[0061] Although the inductor element 2 is provided on the first main surface 5a of the substrate 5, it may be provided on the second main surface 5b of the substrate 5.

[0062] The mounting surface is the third main surface 10a side, but may be the second main surface 5b side, or may be both the third main surface 10a side and the second main surface 5b side, allowing electronic component 1 to be mounted on two components at the same time.

[0063] Furthermore, the electronic component 1 may be embedded in a mounting board, in which case the first vertical wiring 51 and the second vertical wiring 52 may serve as external terminals.

[0064] Furthermore, there may be a plurality of capacitor elements 7 or a plurality of inductor elements 2. This allows the characteristics of the electronic component 1 to be adjusted.

[0065] [Preferable configuration of each component] (Electronic Components 1) The electronic component 1 is mounted on electronic devices such as personal computers, DVD players, digital cameras, TVs, mobile phones, car electronics, etc. The electronic component 1 has a substrate 5, an inductor element 2, a capacitor element 7, a shielding layer 8, a connection layer 9, a first external terminal 41, a second external terminal 42, and a third external terminal 43.

[0066] The shield layer 8 and the connection layer 9 are disposed between the inductor element 2 and the capacitor element 7. The shield layer 8 reduces the magnetic flux of the inductor element 2 from flowing toward the capacitor element 7. The connection layer 9 electrically connects the capacitor element 7 and the inductor element 2.

[0067] A first end 21a of the inductor wiring 21 of the inductor element 2 is connected to the first external terminal 41 via a first vertical wiring 51. A second end 21b of the inductor wiring 21 of the inductor element 2 is connected to the second external terminal 42 via a second vertical wiring 52.

[0068] A first end of the capacitor element 7 is connected to a second end 21b of the inductor wiring 21 via a connection layer 9. A second end of the capacitor element 7 is connected to a third external terminal 43. In this manner, the inductor element 2 and the capacitor element 7 are connected in series to form an LC resonant circuit.

[0069] In the drawing, the thickness direction of electronic component 1 is defined as the Z direction, the forward Z direction is defined as the top side, and the reverse Z direction is defined as the bottom side. In a plane perpendicular to the Z direction of electronic component 1, the longitudinal direction of electronic component 1 in which first external terminal 41, second external terminal 42, and third external terminal 43 are aligned is defined as the X direction, and the width direction of electronic component 1 perpendicular to the longitudinal direction is defined as the Y direction.

[0070] (Inductor element 2) The inductor element 2 comprises an element body 10, an inductor wiring 21 arranged within the element body 10, a non-magnetic insulator 60 covering at least a portion of the inductor wiring 21, and a first vertical wiring 51 and a second vertical wiring 52 provided within the element body 10 so that their end faces are exposed from the third main surface 10a of the element body 10. The first external terminal 41, the second external terminal 42 and the third external terminal 43 are arranged on the third main surface 10a of the element body 10, and a covering film 50 is provided on the third main surface 10a of the element body 10 to expose the first external terminal 41, the second external terminal 42 and the third external terminal 43.

[0071] The element 10 is composed of a magnetic layer, and the magnetic layer includes magnetic powder and a resin containing the magnetic powder. The resin is, for example, an organic insulating material made of an epoxy system, a phenol system, a liquid crystal polymer system, a polyimide system, an acrylic system, or a mixture containing them. The magnetic powder is, for example, an FeSi system alloy such as FeSiCr, an FeCo system alloy, an Fe system alloy such as NiFe, or an amorphous alloy thereof. Therefore, compared with a magnetic layer made of ferrite, the magnetic powder can improve the DC superposition characteristics, and the resin insulates between the magnetic powders, thereby reducing loss (iron loss) at high frequencies. The magnetic layer may not include an organic resin, such as a sintered body of ferrite or magnetic powder.

[0072] The inductor wiring 21 is a wiring that extends in a spiral shape along the first main surface 5a. The number of turns of the inductor wiring 21 is preferably more than one. This can improve the inductance. When viewed from the Z direction, the inductor wiring 21 is spirally wound in the counterclockwise direction from the first end 21a, which is the inner circumferential end, to the second end 21b, which is the outer circumferential end.

[0073] A first end 21a of the inductor wiring 21 is connected to the first external terminal 41 via a first vertical wiring 51 in contact with an upper surface of the first end 21a. A second end 21b of the inductor wiring 21 is connected to the second external terminal 42 via a second vertical wiring 52 in contact with an upper surface of the second end 21b. Note that a plurality of inductor wirings 21 may be present along the Z direction, and the plurality of inductor wirings 21 may be connected in series.

[0074] The thickness of the inductor wiring 21 is preferably, for example, 40 μm or more and 120 μm or less. In an embodiment of the inductor wiring 21, the thickness is 30 μm and the wiring width is 45 μm. The inductor wiring 21 is made of a conductive material, for example, a metal material with low electrical resistance such as Cu, Ag, Au, or Al. The inductor wiring may have a two-layer structure of a seed layer and an electrolytic plating layer, and the seed layer may contain Ti or Ni.

[0075] In a cross section perpendicular to the extending direction of the inductor wiring 21, the inductor wiring 21 has a top surface 211 and a bottom surface 212 parallel to the first main surface 5a, and two side surfaces 213 perpendicular to the first main surface 5a. The top surface 211 is located in the forward Z direction, and the bottom surface 212 is located in the reverse Z direction. The top surface 211 and the two side surfaces 213 are in contact with the insulator 60. The bottom surface 212 is in contact with the magnetic layer of the element body 10.

[0076] The first vertical wiring 51 is made of a conductive material, extends in the Z direction from the upper surface of the inductor wiring 21, and penetrates inside the element body 10. The first vertical wiring 51 includes a via wiring provided on the upper surface of the first end 21a of the inductor wiring 21 and penetrating inside the insulator 60, and a columnar wiring extending in the forward Z direction from the upper surface of the via wiring, penetrating inside the element body 10, and having an end face exposed on the third main surface 10a of the element body 10. The via wiring is a conductor having a line width (diameter, cross-sectional area) smaller than that of the columnar wiring.

[0077] The second vertical wiring 52 has a configuration similar to that of the first vertical wiring 51. That is, the second vertical wiring 52 includes a via wiring provided on the upper surface of the second end 21b of the inductor wiring 21 and penetrating inside the insulator 60, and a columnar wiring extending in the forward Z direction from the upper surface of the via wiring, penetrating inside the element body 10, and having an end face exposed on the third main surface 10a of the element body 10.

[0078] The first external terminal 41, the second external terminal 42, and the third external terminal 43 are each made of a conductive material, and have a three-layer structure in which, for example, Cu, which has low electrical resistance and excellent stress resistance, Ni, which has excellent corrosion resistance, and Au, which has excellent solder wettability and reliability, are arranged in this order from the inside to the outside. The thicknesses of the Cu / Ni / Au layers are, for example, 5 / 5 / 0.01 μm.

[0079] The insulator 60 is made of an insulating material that does not contain a magnetic material, and is, for example, an organic resin such as an epoxy resin, a phenol resin, a polyimide resin, a liquid crystal polymer, or a combination of these, a sintered body such as glass or alumina, or a thin film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film.

[0080] (Capacitor element 7) The capacitor element 7 has a first electrode portion 71 , a second electrode portion 72 , a third electrode portion 73 , a first dielectric portion 74 , a second dielectric portion 75 , a third vertical wiring 53 , a fourth vertical wiring 54 , and a fifth vertical wiring 55 .

[0081] The first electrode portion 71 extends in a direction perpendicular to the first main surface 5a between the first main surface 5a and the second main surface 5b, and is located closest to the substrate 5. In the XZ cross section of FIG. 2, the first electrode portion 71 is formed in a meandering shape extending in the X direction while folding back in the Z direction. The first electrode portion 71 is a doped layer formed by doping impurities into the first main surface 5a of the substrate 5. That is, the first electrode portion 71 is also a part of the substrate 5. The first electrode portion 71 may be a thin film of a metal material. That is, for example, the thin film first electrode portion 71 may be formed on the substrate 5 using chemical vapor deposition (CVD), atomic layer deposition (ALD), sputtering, or the like.

[0082] The second electrode portion 72 extends between the first principal surface 5a and the second principal surface 5b in a direction perpendicular to the first principal surface 5a, and faces the first electrode portion 71 in a direction parallel to the first principal surface 5a. In the XZ cross section of FIG. 2, the second electrode portion 72 is formed in a meandering shape extending in the X direction while folding back in the Z direction. The second electrode portion 72 is formed along the first electrode portion 71. The second electrode portion 72 is a thin film of a metal material. The second electrode portion 72 is formed by using, for example, chemical vapor deposition, atomic layer deposition, sputtering, or the like.

[0083] The third electrode portion 73 extends between the first principal surface 5a and the second principal surface 5b in a direction perpendicular to the first principal surface 5a, and faces the second electrode portion 72 in a direction parallel to the first principal surface 5a. In the XZ cross section of FIG. 2, the third electrode portion 73 has a plurality of teeth extending in the Z direction, and is formed in a comb shape in which the plurality of teeth are arranged side by side in the X direction. The teeth of the third electrode portion 73 are inserted into the gaps between the folded portions of the second electrode portion 72. The third electrode portion 73 is a thin film of a metal material. The third electrode portion 73 is formed by using, for example, a chemical vapor deposition method, an atomic layer deposition method, or sputtering.

[0084] The compositions of the first electrode portion 71, the second electrode portion 72, and the third electrode portion 73 are different from the composition of the inductor wiring 21. This allows an appropriate material to be selected based on ease of manufacture and element characteristics. For example, by using aluminum or impurity-doped polysilicon for the first electrode portion 71, the second electrode portion 72, and the third electrode portion 73, it is possible to improve the capacitance through microfabrication. In addition, by using silver or copper for the inductor wiring 21, it is possible to suppress heat generation when a direct current flows.

[0085] The first dielectric portion 74 is located between the first electrode portion 71 and the second electrode portion 72. The first dielectric portion 74 is formed along the first electrode portion 71. The second dielectric portion 75 is located between the second electrode portion 72 and the third electrode portion 73. The second dielectric portion 75 is formed along the second electrode portion 72. The first dielectric portion 74 and the second dielectric portion 75 are thin films of a dielectric material. The first dielectric portion 74 and the second dielectric portion 75 are formed using, for example, a chemical vapor deposition method or an atomic layer deposition method.

[0086] The first electrode portion 71 is connected to the fourth vertical wiring 54, and the fourth vertical wiring 54 is connected to the connection layer 9. As a result, the first electrode portion 71 is electrically connected to the second end 21b of the inductor wiring 21, and is electrically connected to the second external terminal 42.

[0087] The third electrode portion 73 is connected to the fifth vertical wiring 55, and the fifth vertical wiring 55 is connected to the connection layer 9. As a result, the third electrode portion 73 is electrically connected to the second end 21b of the inductor wiring 21, and is electrically connected to the second external terminal 42.

[0088] The second electrode portion 72 is connected to the third vertical wiring 53, and the third vertical wiring 53 is connected to the third external terminal 43. This electrically connects the second electrode portion 72 to the third external terminal 43. Therefore, by applying a voltage to the second external terminal 42 and the third external terminal 43, a capacitance can be formed between the first electrode portion 71 and the second electrode portion 72, and a capacitance can be formed between the second electrode portion 72 and the third electrode portion 73.

[0089] A first insulating layer 61 is laminated on the upper surface of the third electrode portion 73, and a second insulating layer 62 is laminated on the upper surface of the first insulating layer 61. The element body 10 is laminated on the upper surface of the second insulating layer 62. The material of the first insulating layer 61 and the second insulating layer 62 is the same as the material of the insulator 60.

[0090] The third vertical wiring 53 is connected to the upper surface of the second electrode portion 72, and extends in the Z direction through the first insulating layer 61, the second insulating layer 62 and the inside of the element body 10 to the third main surface 10a of the element body 10. The third vertical wiring 53 has a columnar wiring, a via wiring, and a connection wiring that is in the same layer as the inductor wiring 21 and is not connected to the inductor wiring 21. In other words, the third vertical wiring 53 is not electrically connected to the inductor wiring 21. Therefore, it is possible to obtain the circuit constant of only the capacitor element 7.

[0091] The fourth vertical wiring 54 connects to the upper surface of the first electrode portion 71, penetrates the inside of the first insulating layer 61 and the second insulating layer 62, and extends in the Z direction to the connection layer 9. The fifth vertical wiring 55 connects to the upper surface of the third electrode portion 73, penetrates the inside of the first insulating layer 61, and extends in the Z direction to the connection layer 9.

[0092] In addition, the third vertical wiring 53 may be connected to the first electrode portion 71 instead of the second electrode portion 72, and in this case, the second electrode portion 72 is connected to the fourth vertical wiring 54, and the third electrode portion 73 is connected to the third vertical wiring 53.

[0093] (Shield layer 8) The shield layer 8 has a part of the second insulating layer 62 and a shield conductor layer 81 provided on the upper surface of the second insulating layer 62. The shield conductor layer 81 has a flat plate shape extending in a direction parallel to the first main surface 5a, and is arranged so as to cover the upper side of the capacitor element 7. Therefore, when magnetic flux passes through the capacitor element 7, it fluctuates the electric field of the capacitor element 7, but since the shield conductor layer 81 is provided, it is possible to suppress the impedance from fluctuating.

[0094] The material of the shield conductor layer 81 is the same as the material of the inductor wiring 21, and the shield conductor layer 81 is made of, for example, copper wiring. When viewed in a direction perpendicular to the first main surface 5a, specifically, from the Z direction, the higher the proportion of the shield conductor layer 81 (copper wiring) in the shield layer 8, the higher the shielding effect. For this reason, the proportion of the area of ​​the shield conductor layer 81 in the shield layer 8 viewed from the Z direction is preferably 80% or more. In addition, the shield layer 8 preferably covers an area where the density of the magnetic flux generated by the inductor element 2 is high, and preferably covers, for example, the lower part of the inner circumferential area surrounded by the inductor wiring 21.

[0095] (Connection Layer 9) The connection layer 9 has a part of the second insulating layer 62, a connection conductor layer 91, and a sixth vertical wiring 56. The connection conductor layer 91 extends in a direction parallel to the first main surface 5a. The connection conductor layer 91 does not wind more than one turn. Therefore, the connection conductor layer 91 can be minimized, so that the area (volume) occupied by the capacitor element 7 and the inductor element 2 can be relatively increased, and the circuit constants of the capacitor element 7 and the inductor element 2 can be obtained.

[0096] The sixth vertical wire 56 extends in a direction perpendicular to the first main surface 5a. The sixth vertical wire 56 is connected between the second end 21b of the inductor wire 21 and the fourth vertical wire 54 of the capacitor element 7.

[0097] The sixth vertical wiring 56 includes a first end face on the inductor element 2 side and a second end face on the capacitor element 7 side. Specifically, the first end face is connected to the second end 21b of the inductor wiring 21, and the second end face is connected to the fourth vertical wiring 54.

[0098] Preferably, the area of ​​the first end face is larger than the area of ​​the second end face, thereby making it possible to reduce the electrical resistance of the inductor element 2 side of the sixth vertical wiring 56, through which a larger direct current flows than that of the capacitor element 7 side of the sixth vertical wiring 56.

[0099] Here, the area of ​​the first end face can be made larger than the area of ​​the second end face by, for example, forming a through hole through which the sixth vertical wiring 56 penetrates from the inductor element 2 side by laser processing in the manufacture of the electronic component 1. That is, the capacitor element 7, the connection layer 9, and the inductor element 2 are laminated in this order. Therefore, even if the inductor element 2 contains a large amount of organic resin, it can be manufactured from the capacitor element 7, and therefore the thermal load applied to the inductor element 2 can be reduced when manufactured.

[0100] (Substrate 5) The substrate 5 is a silicon substrate containing silicon elements. The electrical resistivity of the substrate 5 is preferably 1 Ω·cm or less. By lowering the electrical resistivity of the substrate 5, the substrate 5 itself can be used as a ground, improving the stability of the ground.

[0101] Here, when the substrate 5 is doped with an impurity to form the first electrode portion 71, which is a doped layer, the silicon substrate 5 is doped with a group III or V impurity of 1×10 16 / cm 3 Doping at the above concentrations can reduce the electrical resistivity of the substrate 5, allowing the doped layer to be used as a conductor.

[0102] The first electrode portion 71 is a part of the capacitor element 7, but since the first electrode portion 71 is a doped layer of the substrate 5, it is also a part of the substrate 5. Hereinafter, the first electrode portion 71 will be described as a part of the substrate 5. Note that if the first electrode portion 71 is not a doped layer but a thin film of a metal material provided on the substrate 5, the first electrode portion 71 is not considered to be a part of the substrate 5.

[0103] Fig. 4A is a plan view seen from the first main surface 5a side of the substrate 5. As shown in Fig. 2 and Fig. 4A, the substrate 5 has a groove portion 5c on the first main surface 5a side into which the second electrode portion 72 is inserted. When viewed from a direction perpendicular to the first main surface 5a, the shape of the first main surface 5a of the substrate 5 excluding the groove portion 5c is made up of a plurality of polygons, and each polygon has six or more vertices.

[0104] Specifically, the substrate 5 has a remaining portion 5d excluding the groove portion 5c. A plurality of the remaining portions 5d are provided. The groove portion 5c is formed between adjacent remaining portions 5d. The remaining portions 5d are formed into hexagonal columns. When viewed from a direction perpendicular to the first main surface 5a, the shape of the remaining portions 5d is a hexagon. This hexagon is an outwardly convex shape. In this way, the shape of the first main surface 5a of the substrate 5 excluding the groove portions 5c is made up of a plurality of hexagons.

[0105] According to the above configuration, the surface area of ​​the remaining portion 5d of the substrate 5 excluding the groove portion 5c can be increased, the surface area of ​​the first electrode portion 71 can be increased, and the capacitance of the capacitor element 7 can be increased.

[0106] FIG. 4B is a plan view of another substrate 5A as viewed from the first main surface 5a side. As shown in FIG. 4B, when viewed from a direction perpendicular to the first main surface 5a, the shape of the remaining portion 5d of the substrate 5A excluding the groove portion 5c is a dodecagon. This dodecagon is a dodecagon with a part concave inward. In this way, the shape of the first main surface 5a of the substrate 5 excluding the groove portion 5c is composed of multiple dodecagons. Note that when viewed from a direction perpendicular to the first main surface 5a, the shape of the remaining portion 5d may be another polygon having six or more vertices.

[0107] 2, the inductor element 2 is located on the opening side of the groove 5c with respect to the substrate 5. Since the opening side of the groove 5c of the capacitor element 7 has an uneven shape, by positioning the inductor element 2 on the opening side of the groove 5c with respect to the substrate 5, the contact area between the capacitor element 7 and the inductor element 2 can be increased, and the mechanical strength between the elements can be improved. For example, peeling between the elements due to thermal stress such as a reflow load can be suppressed.

[0108] 5 is an enlarged view of a portion of FIG. 2. As shown in FIG. 5, the third electrode portion 73 is inserted into the groove portion 5c of the substrate 5, and therefore a recess 73a is formed on the upper surface of the third electrode portion 73 overlapping the groove portion 5c. Since the first insulating layer 61 and the second insulating layer 62 are thin films, the recess 73a is transferred to the upper surfaces of the first insulating layer 61 and the second insulating layer 62 overlapping the recess 73a. That is, a recess is formed on the upper surface of the second insulating layer 62, and the contact area between the element body 10 and the second insulating layer 62 is increased. This improves the adhesion between the inductor element 2 and the capacitor element 7.

[0109] The depth of the recess 73a is, for example, not less than 1 μm and not more than 4 μm. Preferably, the depth of the recess 73a is in the range of not less than 0.5 times and not more than 3 times the thickness t73 of the third electrode portion 73. If the depth of the recess 73a is small, the improvement in the mechanical strength (adhesion) between the elements is small, and if the depth of the recess 73a is large, there is a risk of disconnection or the like occurring in the third electrode portion 73.

[0110] (Thickness of each component) The thickness t21 of the inductor wiring 21 is thicker than the thickness t72 of the second electrode portion 72. This allows the thickness t21 of the inductor wiring 21 to be thickened, thereby reducing the resistance and improving the efficiency of obtaining inductance. On the other hand, the thickness t72 of the second electrode portion 72 can be thinned, thereby preventing the electronic component 1 from becoming large, and by stacking the first electrode portion 71 and the second electrode portion 72 in a direction parallel to the first main surface 5a, the capacitance of the capacitor can be increased.

[0111] Here, considering the case where the first electrode portion 71 is a doped layer of the substrate 5 and the boundary between the doped layer and the undoped layer cannot be distinguished in the substrate 5, the thickness t72 of the second electrode portion 72, rather than the thickness of the first electrode portion 71, is compared with the thickness t21 of the inductor wiring 21.

[0112] Unless otherwise specified, the thickness of each of the electrode parts and inductor wiring is measured from an SEM (scanning electron microscope) image of a cross section at the center of the electronic component in the Y direction. In this case, the SEM image is acquired at a magnification of, for example, 1000 times. SEM images like the above are acquired at five points on the cross section, the thickness of each is measured, and the average value is calculated to be the thickness. In addition, when the electrode parts and inductor wiring are laminated in multiple layers, the average value of each layer is used as the thickness of each.

[0113] Preferably, the thickness t21 of the inductor wiring 21 is 10 times or more the thickness t72 of the second electrode portion 72. For example, the inductor wiring 21 is a copper wiring having a thickness of 50 μm, and the second electrode portion 72 is a polysilicon wiring having a thickness of 2 μm. According to this, the thickness of the inductor wiring 21 through which a larger direct current flows than the second electrode portion 72 is made sufficiently thick, so that the direct current resistance can be reduced. In addition, since the thickness t72 of the second electrode portion 72 can be made sufficiently thin, the capacitance of the capacitor can be increased by stacking the first electrode portion 71 and the second electrode portion 72 in a direction parallel to the first main surface 5a while suppressing an increase in size of the electronic component 1.

[0114] Preferably, the thickness t21 of the inductor wiring 21 is greater than the thickness t73 of the third electrode portion 73. This allows the thickness t73 of the third electrode portion 73 to be thin, so that the capacitance of the capacitor can be increased by stacking a plurality of second electrode portions 72 and a plurality of third electrode portions 73 in a direction parallel to the first main surface 5a while preventing the electronic component 1 from becoming large.

[0115] Preferably, the thickness t21 of the inductor wiring 21 is greater than the thickness of the shield conductor layer 81. With this, by making the thickness of the inductor wiring 21, through which a larger DC current flows than the shield conductor layer 81, sufficiently thick, the DC resistance can be reduced.

[0116] Preferably, the thickness t21 of the inductor wiring 21 is greater than the thickness of the connecting conductor layer 91. With this, by making the thickness of the inductor wiring 21, through which a larger DC current flows than that of the connecting conductor layer 91, sufficiently thick, it is possible to reduce the DC resistance.

[0117] Preferably, the thickness of the capacitor element 7 is 100 μm or less, the thickness of the inductor element 2 is 200 μm or less, and the thickness of the electronic component 1 is 300 μm or less. The thickness of the capacitor element 7 is the length in the Z direction from the lower surface of the first electrode portion 71 to the upper surface of the first insulating layer 61. The thickness of the inductor element 2 is the length in the Z direction from the lower surface of the inductor wiring 21 to the upper surface (third main surface 10a) of the element body 10. The thickness of the electronic component 1 is the length of the electronic component 1 in the Z direction. This allows the electronic component 1 to be made thinner.

[0118] [Manufacturing method] Next, a description will be given of a method for manufacturing the electronic component 1. Figures 6A to 6Q correspond to the cross section AA (Figure 2) of Figure 1.

[0119] As shown in FIG. 6A, a substrate 5 containing silicon elements is prepared, having a first main surface 5a and a second main surface 5b facing each other. The substrate 5 is a silicon substrate. Although not shown, a film serving as a hard mask is formed on the first main surface 5a, and the film is patterned to form a hard mask. Then, silicon deep etching (Bosch process) is performed, and the hard mask is removed. As a result, a groove portion 5c and a remaining portion 5d are formed on the first main surface 5a of the substrate 5, as shown in FIG. 6B.

[0120] 6C, a resist 101 is patterned on the first main surface 5a, and impurities such as phosphorus are doped using a gas such as phosphine (PH3), thereby forming a first electrode portion 71, which is a doped layer, on the first main surface 5a.

[0121] As shown in Fig. 6D, a first dielectric portion 74, a second electrode portion 72, a second dielectric portion 75, and a third electrode portion 73 are formed in this order on a first electrode portion 71. At this time, for example, they are formed by using a chemical vapor deposition method or an atomic layer deposition method. Note that the first electrode portion 71 may be a polysilicon electrode doped with a high concentration impurity, and the first dielectric portion 74 may be an insulating film of a high-K silicon oxide film such as hafnium oxide.

[0122] 6E, third electrode portion 73, second dielectric portion 75, second electrode portion 72, and first dielectric portion 74 are etched in a predetermined pattern in this order using a photolithography method. At this time, they are formed so that a part of first electrode portion 71 is exposed and a part of second electrode portion 72 is exposed.

[0123] As shown in Fig. 6F, a first insulating layer 61 is formed on the first electrode portion 71, the second electrode portion 72, and the third electrode portion 73 by using a chemical vapor deposition method or an atomic layer deposition method. As shown in Fig. 6G, the first insulating layer 61 is etched into a predetermined pattern by using a photolithography method. At this time, the first electrode portion 71 is partially exposed, the second electrode portion 72 is partially exposed, and the third electrode portion 73 is partially exposed.

[0124] 6H, the first conductive layer 121 is formed on a part of the first electrode portion 71, a part of the second electrode portion 72, and a part of the third electrode portion 73 by using a chemical vapor deposition method or an atomic layer deposition method, and the first conductive layer 121 is etched into a predetermined pattern by using a photolithography method. At this time, the first electrode portion 71 and a part of the third electrode portion 73 are electrically connected, and the first electrode portion 71 and a part of the second electrode portion 72 are formed so as not to be electrically connected. In this manner, the capacitor element 7 is formed on the substrate 5 using an inorganic material.

[0125] Then, the second insulating layer 62 is formed on the first insulating layer 61 and the first conductive layer 121 by chemical vapor deposition or atomic layer deposition, and the second insulating layer 62 is etched into a predetermined pattern by photolithography. At this time, the second insulating layer 62 is formed so that a first portion of the first conductive layer 121 connected to the first electrode portion 71 and the third electrode portion 73 is exposed, and a second portion of the first conductive layer 121 connected to the second electrode portion 72 is exposed.

[0126] Thereafter, a seed layer (not shown) is formed on the first conductive layer 121 and the second insulating layer 62. Then, a resist (not shown) is attached, and a predetermined pattern is formed on the resist using a photolithography method. As shown in FIG. 6I, while supplying power to the seed layer, a second conductive layer 122 corresponding to the shield conductor layer 81 and the connection conductor layer 91 is formed on the first conductive layer 121 and the second insulating layer 62 using an electrolytic plating method. Thereafter, the resist is peeled off, and the seed layer is etched. In this manner, the shield layer 8 and the connection layer 9 are formed on the capacitor element 7.

[0127] Then, a seed layer (not shown) is formed on the second conductive layer 122. Then, a resist (not shown) is attached, and a predetermined pattern is formed on the resist by using a photolithography method. As shown in FIG. 6J, a first vertical conductive layer 131 is formed on the second conductive layer 122 by using an electrolytic plating method while supplying power to the seed layer. Then, the resist is peeled off, and the seed layer is etched. At this time, the first vertical conductive layer 131 has a first portion and a second portion that is not electrically connected to the first portion. The first portion of the first vertical conductive layer 131 is provided at a position overlapping the first portion of the first conductive layer 121, and corresponds to the sixth vertical wiring 56. The second portion of the first vertical conductive layer 131 is provided at a position overlapping the second portion of the first conductive layer 121, and corresponds to a part of the third vertical wiring 53.

[0128] 6K, the first magnetic layer 11 is pressed onto the first vertical conductive layer 131 from above to cover the first vertical conductive layer 131 with the first magnetic layer 11. Then, the upper surface of the first magnetic layer 11 is ground to expose an end face of the first portion of the first vertical conductive layer 131 and an end face of the second portion of the first vertical conductive layer 131 from the upper surface of the first magnetic layer 11.

[0129] Then, a seed layer (not shown) is formed on the first magnetic layer 11. Then, a DFR (dry film resist) is attached, and a predetermined pattern is formed on the DFR using a photolithography method. As shown in FIG. 6L, while supplying power to the seed layer, an inductor wiring 21 and a connection wiring 123 not connected to the inductor wiring 21 are formed on the first magnetic layer 11 using an electrolytic plating method. Then, the DFR is peeled off, and the seed layer is etched. At this time, the inductor wiring 21 is connected to the first portion of the first vertical conductive layer 131, and the connection wiring 123 is connected to the second portion of the first vertical conductive layer 131. An insulating layer may be patterned on the first magnetic layer 11, or multiple layers of inductor wiring may be formed.

[0130] 6M, an insulator 60 is applied onto the inductor wiring 21 and the connection wiring 123 and cured. After that, the insulator 60 is irradiated with a laser to form openings so that a portion of the upper surface of the inductor wiring 21 to which the via wiring is connected and a portion of the upper surface of the connection wiring 123 to which the via wiring is connected are exposed.

[0131] Then, a seed layer is formed on the insulator 60. A DFR is attached again, and a predetermined pattern is formed on the DFR using a photolithography process. The predetermined pattern is through holes corresponding to the positions where the columnar wiring on the inductor wiring 21 and the connection wiring 123 are to be provided. Via wiring and columnar wiring are formed on the inductor wiring 21 and the connection wiring 123 using electrolytic plating. That is, a first vertical wiring 51 is formed on the first end 21a of the inductor wiring 21, a second vertical wiring 52 is formed on the second end 21b of the inductor wiring 21, and a second vertical conductive layer 132 is formed on the connection wiring 123. The connection wiring 123 and the second vertical conductive layer 132 correspond to a part of the third vertical wiring 53. Then, the DFR is peeled off, and the seed layer is etched.

[0132] As shown in FIG. 6N, the second magnetic layer 12 is pressure-bonded from above the first vertical wiring 51, the second vertical wiring 52, and the third vertical wiring 53 toward the inductor wiring 21, so that the inductor wiring 21 and the first vertical wiring 51, the second vertical wiring 52, and the third vertical wiring 53 are covered with the second magnetic layer 12. Thereafter, the upper surface of the second magnetic layer 12 is ground to expose the end faces of the first vertical wiring 51, the second vertical wiring 52, and the third vertical wiring 53 from the upper surface of the second magnetic layer 12. The first magnetic layer 11 and the second magnetic layer 12 form the element body 10. In this manner, the inductor element 2 is formed in a layer different from the capacitor element 7 on the first main surface 5a of the substrate 5 using an organic material.

[0133] As shown in Fig. 6O, an insulating layer that will become the coating film 50 is applied to the upper surface of the element body 10. Then, the insulating layer is formed into a predetermined pattern using a photolithography method and cured. The predetermined pattern is a pattern that enables the coating film 50 to cover the upper surface of the element body 10 except for the areas where the first external terminal 41, the second external terminal 42, and the third external terminal 43 are to be formed. The lower surface of the substrate 5 may be removed by polishing, allowing the thickness of the substrate 5 to be adjusted.

[0134] 6P, the first external terminal 41, the second external terminal 42 and the third external terminal 43 are formed by electroless plating so as to cover the end faces of the first vertical wire 51, the second vertical wire 52 and the third vertical wire 53 exposed from the element body 10. The first external terminal 41, the second external terminal 42 and the third external terminal 43 are, for example, Cu / Ni / Au laminated in this order from the third main surface 10a side.

[0135] As shown in FIG. 6Q, the electronic component 1 is divided into individual pieces along cutting lines D, and the electronic component 1 is manufactured as shown in FIG.

[0136] As described above, the method for manufacturing electronic component 1 includes a step of forming capacitor element 7 on substrate 5 using an inorganic material, and a step of forming inductor element 2 on first main surface 5a of substrate 5 using an organic material in a layer different from that of capacitor element 7. After the step of forming capacitor element 7, a step of forming inductor element 2 is performed.

[0137] According to the above configuration, the inductor element 2 and the capacitor element 7 are provided on different layers, so that the mounting area of ​​the electronic component 1 can be reduced. In addition, the capacitor element 7 is formed first using an inorganic material that remains even after firing, and then the inductor element 2 is formed using an organic material that dissipates due to heat, so that no unnecessary thermal load is applied to the inductor element 2. This makes it possible to manufacture electronic components with improved quality.

[0138] <Second embodiment> Fig. 7 is a cross-sectional view showing a second embodiment of the electronic component. Fig. 7 is a cross-sectional view corresponding to Fig. 2. Fig. 8 is an equivalent circuit diagram of the second embodiment of the electronic component. The second embodiment differs from the first embodiment in that a terminal wiring connected to the capacitor element is provided. This different configuration will be described below. The other configurations are the same as those of the first embodiment, and the same reference numerals as those of the first embodiment will be used and the description thereof will be omitted.

[0139] As shown in FIGS. 7 and 8, in the electronic component 1A of the second embodiment, a terminal wiring 57 is provided on the second main surface 5b of the substrate 5. The terminal wiring 57 contacts the first electrode portion 71 of the capacitor element 7 and is electrically connected to the first electrode portion 71. The terminal wiring 57 is made of the same conductive material as the first to third vertical wirings 51 to 53. For example, the second main surface 5b of the substrate 5 is ground so that the first electrode portion 71 is exposed. The terminal wiring 57 is provided on the entire surface of the second main surface 5b so as to contact the entire surface of the first electrode portion 71 exposed from the second main surface 5b.

[0140] <Third embodiment> Fig. 9 is a cross-sectional view showing a third embodiment of the electronic component. Fig. 9 is a cross-sectional view corresponding to Fig. 2. Fig. 10 is an equivalent circuit diagram of the third embodiment of the electronic component. The third embodiment differs from the first embodiment in the positional relationship of the inductor element with respect to the substrate and the structure of the inductor element. This different configuration will be described below. The other configurations are the same as those of the first embodiment, and the same reference numerals as those of the first embodiment will be used and the description thereof will be omitted.

[0141] 9 and 10, in electronic component 1B of the third embodiment, inductor element 2B is located on the side opposite to the opening side of groove portion 5c with respect to substrate 5. In other words, inductor element 2B is located on second main surface 5b of substrate 5. This allows capacitor element 7 and inductor element 2 to be separated, thereby reducing interference between capacitor element 7 and inductor element 2.

[0142] The inductor element 2B has a first inductor wiring 21B and a second inductor wiring 22B. The first inductor wiring 21B and the second inductor wiring 22B each have a configuration similar to that of the inductor wiring 21 of the first embodiment, and are wirings extending in a spiral shape along the first main surface 5a. The first inductor wiring 21B and the second inductor wiring 22B are arranged in order in the Z direction.

[0143] The first end 21a of the first inductor wiring 21B is connected to the first end 22a of the second inductor wiring 22B through a via wiring. The second end 22b of the second inductor wiring 22B is connected to the first external terminal 41 through a first vertical wiring 51B. The second end 21b of the first inductor wiring 21B is connected to the connection wiring 58 through a via wiring. The connection wiring 58 is made of the same conductive material as the first vertical wiring 51B. The connection wiring 58 is provided on the second main surface 5b of the substrate 5. The first electrode portion 71 of the capacitor element 7 is exposed to the second main surface 5b of the substrate 5. The connection wiring 58 is in contact with the first electrode portion 71 of the capacitor element 7 and is electrically connected to the first electrode portion 71.

[0144] The first electrode portion 71 is connected to the fourth vertical wiring 54. The third electrode portion 73 is connected to the fifth vertical wiring 55. The fourth vertical wiring 54 and the fifth vertical wiring 55 are connected to each other to form the terminal wiring 57B. The second electrode portion 72 is connected to the third vertical wiring 53B. As a result, the terminal wiring 57B and the third vertical wiring 53B are located on the opposite side to the first external terminal 41.

[0145] Preferably, a dummy terminal 45 is provided on the third main surface 10a of the element body 10. The dummy terminal 45 is not electrically connected to the inductor element 2B and the capacitor element 7. The dummy terminal 45 is used, for example, as a marker that indicates the orientation of the electronic component 1B.

[0146] Preferably, in the first inductor wiring 21B, at least one of the top surface 211 and the bottom surface 212 and the two side surfaces 213 are in contact with the element body 10. In this embodiment, the top surface 211, the bottom surface 212 and the two side surfaces 213 are in contact with the element body 10 (magnetic layer). This makes it possible to increase the volume of the element body 10 and improve inductance. Note that the top surface 211 or the bottom surface 212 may be in contact with a non-magnetic layer such as an insulator.

[0147] <Fourth embodiment> Fig. 11 is a cross-sectional view showing a fourth embodiment of the electronic component. Fig. 11 is a cross-sectional view corresponding to Fig. 2. The fourth embodiment differs from the first embodiment in the structure of the capacitor element. This different configuration will be described below. The other configurations are the same as those of the first embodiment, and the description thereof will be omitted.

[0148] As shown in FIG. 11, in the capacitor element 7C of the electronic component 1C of the fourth embodiment, the first electrode portion 71 is a porous metal layer provided on the first main surface 5a. The porous metal layer has pores 71a extending in a direction intersecting the first main surface 5a. The first dielectric portion 74 is provided on the inner surface of the pores 71a. The second electrode portion 72 is laminated on the first dielectric portion 74. Although not shown, the second dielectric portion 75 and the third electrode portion 73 are laminated in this order on the second electrode portion 72. According to this, since the porous metal layer is provided, the surface areas of the first electrode portion 71 and the first dielectric portion 74 can be increased, and the capacitance of the capacitor element 7C can be increased. The porous metal layer may be provided on the second main surface 5b of the substrate 5.

[0149] A method for manufacturing the capacitor element 7C will be described. The porous metal layer can be produced by etching, sintering, dealloying, or other methods. For example, a metal such as aluminum is deposited on the substrate 5, the metal is etched to make it porous, and the porous metal layer is attached to the substrate 5 as a first electrode portion. Then, a thin-film dielectric portion is formed on the surface of the porous metal layer by using a chemical vapor deposition method, an atomic layer deposition method, or other method. This forms a dielectric portion on the inner surface of the pores of the porous metal layer. Furthermore, a thin-film second electrode portion is formed on the surface of the dielectric portion by using a chemical vapor deposition method, an atomic layer deposition method, or other method. Furthermore, a second dielectric portion and a third electrode portion are formed in sequence in the same manner.

[0150] As another capacitor element, a porous metal layer may be used as the first dielectric part. That is, a first electrode part is formed on a substrate by doping or thin film, then an oxide film (insulator) such as Al2O3 is formed on the first electrode part, the oxide film is etched to make it porous, and a porous metal layer (oxide film) is attached as the first dielectric part on the first electrode part. Then, a second electrode part, a second dielectric part, and a third electrode part are formed in this order on the inner surface of the pores of the porous metal layer.

[0151] <Fifth embodiment> Fig. 12 is a schematic diagram showing an embodiment of an electronic circuit. As shown in Fig. 12, an electronic circuit 3 has an electronic component 1, a switching element 301 electrically connected to an inductor element 2, a ground 302 electrically connected to a capacitor element 7, and a load element 303 electrically connected to the inductor element 2 and the capacitor element 7. This makes it possible to provide a small DC-DC converter.

[0152] The electronic component 1 represents the electronic component of the first embodiment, but may be any of the electronic components of the second to fourth embodiments. The switching element 301 is, for example, a CMOS switch. The switching element 301 is connected to an input voltage (Vin). The load element 303 is, for example, a resistor. The electronic component may have multiple inductor elements and multiple capacitor elements.

[0153] The present disclosure is not limited to the above-described embodiments, and design modifications are possible without departing from the scope of the present disclosure. For example, the respective characteristic points of the first to fifth embodiments may be combined in various ways.

[0154] In the above embodiment, the inductor wiring of the inductor element generates a magnetic flux in the magnetic layer when a current flows, thereby providing the inductor element with inductance, and there is no particular limitation on its structure, shape, material, etc. In particular, it is not limited to a straight line or a curve (spiral = two-dimensional curve) extending on a plane as in the embodiment, and various known wiring shapes such as meander wiring can be used.

[0155] In the above embodiment, the capacitor element has at least two electrode parts, and the electrode parts are not particularly limited as long as they store electric charge between the two electrode parts via the dielectric part by applying a voltage to the two electrode parts. In particular, the electrode parts are not limited to a meandering cross section as in the embodiment, and various known electrode shapes such as a flat plate can be used. [Explanation of symbols]

[0156] 1, 1A, 1B Electronic Components 2, 2B inductor element 3 Electronic circuit 5, 5A board 5a 1st principal surface 5b Second main surface 5c Groove 5d remaining part 7, 7C Capacitor Element 8 Shielding Layer 9. Connection Layer 10 Base 10a Third main surface 11 First magnetic layer 12 Second magnetic layer 21 Inductor wiring 21a 1st end 21b 2nd end 21B First inductor wiring 211 Top 212 Bottom 213 Side 22B Second inductor wiring 22a 1st end 22b 2nd end 41, 42, 43 1st to 3rd external terminals 45 Dummy terminal 50 Coating membrane 51, 51B, 52, 53, 53B, 54, 55, 56 1st to 6th vertical wiring 57, 57B terminal wiring 58 Connection Wiring 60 Insulator 61 First insulating layer 62 Second insulating layer 71, 72, 73 1st to 3rd electrode section 71a Pore 73a Recess 74 First Dielectric Section 75 Second Dielectric Section 81 Shield conductor layer 91 Connecting conductor layer 301 Switching element 302 Grand 303 Load element t21 Inductor wiring thickness t72 Thickness of the second electrode t73 Thickness of the third electrode

Claims

1. a substrate having a first main surface and a second main surface opposed to each other and containing silicon elements; a capacitor element provided on the first main surface side of the substrate; an inductor element provided on the first main surface or the second main surface of the substrate in a direction perpendicular to the first main surface with respect to the capacitor element and electrically connected to the capacitor element; Equipped with The capacitor element is a first electrode portion extending in a direction intersecting the first main surface between the first main surface and the second main surface and positioned on the substrate side; a second electrode portion extending between the first principal surface and the second principal surface in a direction intersecting the first principal surface and facing the first electrode portion in a direction parallel to the first principal surface; a dielectric portion located between the first electrode portion and the second electrode portion; having The inductor element is an element body including a magnetic material and having a third main surface located opposite to the substrate; an inductor wiring provided within the element body and extending in a direction parallel to the first main surface; a vertical wiring provided within the element body, connected to an end of the inductor wiring and extending to the third main surface; having The thickness of the inductor wiring is greater than the thickness of the second electrode portion, Further, a shield layer is provided between the capacitor element and the inductor element, the shield layer includes a shield conductor layer extending in a direction parallel to the first principal surface, The shield conductor layer covers an inner circumferential region surrounded by the inductor wiring when viewed from a direction perpendicular to the first main surface.

2. a substrate having a first main surface and a second main surface opposed to each other and containing silicon elements; a capacitor element provided on the first main surface side of the substrate; an inductor element provided on the first main surface or the second main surface of the substrate in a direction perpendicular to the first main surface with respect to the capacitor element and electrically connected to the capacitor element; Equipped with The capacitor element is a first electrode portion extending in a direction intersecting the first main surface between the first main surface and the second main surface and positioned on the substrate side; a second electrode portion extending between the first principal surface and the second principal surface in a direction intersecting the first principal surface and facing the first electrode portion in a direction parallel to the first principal surface; a dielectric portion located between the first electrode portion and the second electrode portion; having The inductor element is an element body including a magnetic material and having a third main surface located opposite to the substrate; an inductor wiring provided within the element body and extending in a direction parallel to the first main surface; a vertical wiring provided within the element body, connected to an end of the inductor wiring and extending to the third main surface; having The thickness of the inductor wiring is greater than the thickness of the second electrode portion, Further, a shield layer is provided between the capacitor element and the inductor element, the shield layer includes a shield conductor layer extending in a direction parallel to the first principal surface, An electronic component, wherein the shield conductor layer is connected to the first electrode portion or the second electrode portion of the capacitor element, but is not connected to the inductor element.

3. The electronic component according to claim 1 , wherein the inductor wiring has a thickness greater than a thickness of the shield conductor layer.

4. 4. The electronic component according to claim 1, wherein the inductor wiring has a thickness greater than a thickness of the connecting conductor layer.

5. 5. The electronic component according to claim 1 , wherein the capacitor element has a vertical wiring that is connected to the first electrode portion or the second electrode portion, extends through the body to the third main surface, and is not connected to the inductor wiring.

6. The electronic component according to claim 1 , wherein the thickness of the inductor wiring is ten times or more the thickness of the second electrode portion.

7. The electronic component according to claim 1 , wherein a composition of the inductor wiring is different from a composition of each of the first electrode portion and the second electrode portion.

8. 8. The electronic component according to claim 1, wherein the capacitor element has a thickness of 100 μm or less, the inductor element has a thickness of 200 μm or less, and the electronic component has a thickness of 300 μm or less.

9. The electronic component according to claim 1 , wherein at least one of the capacitor element and the inductor element is provided in a plurality of pieces.

10. a connection layer between the capacitor element and the inductor element, the connection layer connecting the capacitor element and the inductor element; 10. The electronic component of claim 1, wherein the connection layer includes a first end face on the inductor element side and a second end face on the capacitor element side, and has vertical wiring extending in a direction perpendicular to the first main surface, and an area of ​​the first end face is larger than an area of ​​the second end face.

11. the substrate has a groove portion on the first main surface side into which the second electrode portion is inserted, The electronic component according to claim 1 , wherein the inductor element is located on a side of the substrate opposite to an opening side of the groove portion.

12. the substrate has a groove portion on the first main surface side into which the second electrode portion is inserted, The electronic component according to claim 1 , wherein the inductor element is located on an opening side of the groove with respect to the substrate.

13. the substrate has a groove portion on the first main surface side into which the second electrode portion is inserted, 13. The electronic component according to claim 1, wherein, when viewed from a direction perpendicular to the first main surface, a shape of the first main surface of the substrate excluding the groove portion is made up of a plurality of polygons, and the polygons have six or more vertices.

14. The first electrode portion is a porous metal layer provided on the first principal surface or the second principal surface, the porous metal layer has pores extending in a direction intersecting the first main surface, The dielectric portion is provided on an inner surface of the hole, The electronic component according to claim 1 , wherein the second electrode portion is laminated to the dielectric portion.

15. 15. The electronic component according to claim 1, wherein the electrical resistivity of the substrate is 1 Ω·cm or less.

16. In a cross section perpendicular to an extension direction of the inductor wiring, the inductor wiring has a top surface and a bottom surface parallel to the first main surface, and two side surfaces perpendicular to the first main surface; 16. The electronic component according to claim 1, wherein at least one of the top surface and the bottom surface and two side surfaces perpendicular to the first main surface are in contact with the element body.

17. An electronic component according to any one of claims 1 to 16; a switching element electrically connected to the inductor element; a ground electrically connected to the capacitor element; a load element electrically connected to the inductor element and the capacitor element; An electronic circuit comprising:

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