Substrate processing apparatus and substrate processing method

Abstract

To provide a technique for improving throughput of a substrate processing apparatus.SOLUTION: A substrate processing apparatus includes a joining device, a conveyance device, and a control device. The joining device joins a first substrate and a second substrate to manufacture a superposed substrate. The joining device includes a first holding portion, a second holding portion, a moving mechanism, a pressing unit, and a displacement detection unit. The moving mechanism moves the relative position of the first holding portion and the second holding portion. The pressing unit depresses the center of the first substrate spaced from the second substrate to be brought into contact with the second substrate. The displacement detection unit detects downward displacement of the first substrate with respect to the first holding portion, in a point separate from the center of the first substrate. The control device controls the conveyance device to start moving toward a substrate carry-in / carry / out position with respect to the joining device, which is triggered by at least one of depressing the first substrate by the pressing unit, detecting the displacement by the displacement detection unit, and starting to move the relative position by the moving mechanism.SELECTED DRAWING: Figure 14

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The bonding systems described in Patent Documents 1 to 3 bond a first substrate and a second substrate to produce an overlapped substrate. The bonding system includes a surface modification device, a surface hydrophilization device, a bonding device, and a transport device. The surface modification device modifies the first substrate and the second substrate. The surface hydrophilization device hydrophilizes the modified first substrate and the second substrate. The bonding device bonds the hydrophilized first substrate and the second substrate to produce an overlapped substrate. The transport device transports the first substrate, the second substrate, and the overlapped substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-10922 A [Patent Document 2] JP 2018-26414 A [Patent Document 3] JP 2018-93018 A Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for improving the throughput of a substrate processing apparatus. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a bonding device that bonds a first substrate and a second substrate to produce a laminated substrate, a transport device that transports the first substrate and the second substrate into and out of the bonding device, and a control device that controls the bonding device and the transport device. The bonding device includes a first holding unit that holds the first substrate from above, a second holding unit that holds the second substrate from below, and a displacement detection unit that detects a downward displacement of the first substrate relative to the first holding unit at a point away from the center of the first substrate. The control device is triggered by detection of the displacement by the displacement detection unit to transmit a preparation command to the transport device to start moving the transport device toward a substrate loading / unloading position for the bonding device. The control device detects the speed of the bonding between the first substrate and the second substrate or determines whether the bonding between the first substrate and the second substrate has been successful by using the displacement detection units. Effect of the Invention

[0006] According to one aspect of the present disclosure, the throughput of a substrate processing apparatus can be improved. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a front view of the substrate processing apparatus of FIG. [Diagram 3] FIG. 3 is a side view showing an example of the first substrate and the second substrate. [Figure 4] FIG. 4 is a flowchart showing a substrate processing method according to an embodiment. [Diagram 5] FIG. 5 is a side view showing an example of a conveying device. [Figure 6] FIG. 6 is a side view showing an example of a position adjustment device. [Figure 7] FIG. 7 is a plan view showing an example of a bonding apparatus. [Figure 8] FIG. 8 is a front cross-sectional view of the joining device of FIG. [Figure 9] 9 is a front cross-sectional view showing the first holding portion and the second holding portion of FIG. [Figure 10]FIG. 10 is a flowchart showing the details of step S109 in FIG. [Figure 11] FIG. 11(A) is a cross-sectional view showing an example of the beginning of bonding progress, FIG. 11(B) is a cross-sectional view showing an example of the middle of bonding progress, and FIG. 11(C) is a cross-sectional view showing an example of the completion of bonding progress. [Figure 12] FIG. 12 is a plan view showing an example of anisotropy in the bonding progress speed. [Figure 13] FIG. 13 is a cross-sectional view showing an example of a nozzle. [Figure 14] FIG. 14 is a flowchart showing a first example of the timing of transmitting a preparation command to the transport device. [Figure 15] FIG. 15 is a flowchart showing a second example of the timing of transmitting a preparation command to the transport device. [Figure 16] FIG. 16 is a flowchart showing a third example of the timing of transmitting a preparation command to the transport device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding configurations are denoted by the same reference numerals, and the description may be omitted. In addition, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is vertical directions.

[0009] First, a substrate processing apparatus 1 according to the present embodiment will be described with reference to Figs. 1 and 2. The substrate processing apparatus 1 bonds a first substrate W1 and a second substrate W2 to prepare a laminated substrate T. The first substrate W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which a plurality of electronic circuits are formed. The second substrate W2 is a bare wafer on which no electronic circuits are formed. The second substrate W2 may also be a substrate on which electronic circuits are formed, similar to the first substrate W1. The first substrate W1 and the second substrate W2 have approximately the same diameter. The compound semiconductor wafer is not particularly limited, but may be, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer.

[0010] Hereinafter, the first substrate W1 may be referred to as the "upper wafer W1", the second substrate W2 may be referred to as the "lower wafer W2", and the overlapped substrate T may be referred to as the "overlapped wafer T". As shown in Fig. 3, of the surfaces of the upper wafer W1, the surface that is to be joined to the lower wafer W2 is referred to as the "joining surface W1j", and the surface opposite the bonding surface W1j is referred to as the "non-bonding surface W1n". Also, of the surfaces of the lower wafer W2, the surface that is to be joined to the upper wafer W1 is referred to as the "joining surface W2j", and the surface opposite the bonding surface W2j is referred to as the "non-bonding surface W2n".

[0011] 1, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged in the positive direction of the X-axis in the order of the loading / unloading station 2 and the processing station 3. The loading / unloading station 2 and the processing station 3 are integrally connected.

[0012] The carry-in / out station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. Cassettes C1, C2, and C3, which accommodate a plurality of substrates (e.g., 25 substrates) in a horizontal state, are mounted on each of the mounting plates 11. The cassette C1 accommodates an upper wafer W1, the cassette C2 accommodates a lower wafer W2, and the cassette C3 accommodates a laminated wafer T. In the cassettes C1 and C2, the upper wafer W1 and the lower wafer W2 are accommodated with their bonding surfaces W1j and W2j facing upwards and aligned in the same direction.

[0013] The transfer region 20 is disposed adjacent to the mounting table 10 on the positive side of the X-axis. The transfer region 20 is provided with a transfer path 21 extending in the Y-axis direction and a transfer device 22 movable along the transfer path 21. The transfer device 22 is movable also in the X-axis direction and rotatable about the Z-axis, and transfers the upper wafer W1, lower wafer W2, and overlapped wafer T between cassettes C1 to C3 mounted on the mounting table 10 and a third processing block G3 of the processing station 3, which will be described later.

[0014] The number of cassettes C1 to C3 placed on the mounting table 10 is not limited to that shown in the figure. In addition to the cassettes C1, C2, and C3, a cassette for recovering defective substrates or the like may be placed on the mounting table 10.

[0015] For example, three processing blocks G1, G2, and G3 are provided in the processing station 3. For example, a first processing block G1 is provided on the rear side (positive Y-axis side in FIG. 1) of the processing station 3, and a second processing block G2 is provided on the front side (negative Y-axis side in FIG. 1) of the processing station 3. Furthermore, a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (negative X-axis side in FIG. 1).

[0016] A transfer region 60 is formed in an area surrounded by the first processing block G1 to the third processing block G3. A transfer device 61 is disposed in the transfer region 60. The transfer device 61 has a transfer arm that is movable, for example, in the vertical direction, the horizontal direction, and around a vertical axis. The details of the transfer device 61 will be described later with reference to FIG. 5.

[0017] The transfer device 61 moves within the transfer region 60 to transfer the upper wafer W1, the lower wafer W2, and the overlapping wafer T to predetermined devices within the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60.

[0018] The first processing block G1 is provided with a surface modification device 33 and a surface hydrophilization device 34. The surface modification device 33 modifies the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2. The surface hydrophilization device 34 hydrophilizes the modified bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2.

[0019] For example, the surface modification device 33 breaks the SiO2 bonds on the bonding surfaces W1j and W2j to form dangling bonds of Si, enabling subsequent hydrophilization. In the surface modification device 33, for example, oxygen gas, which is a processing gas, is excited to plasma and ionized in a reduced pressure atmosphere. The oxygen ions are then irradiated onto the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2, whereby the bonding surfaces W1j and W2j are plasma-processed and modified. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

[0020] The surface hydrophilization device 34 hydrophilizes the bonding surface of the upper wafer W1 and W2j of the lower wafer W2 using a hydrophilization treatment liquid such as pure water. The surface hydrophilization device 34 also has a role of cleaning the bonding surfaces W1j, W2j. In the surface hydrophilization device 34, pure water is supplied onto the upper wafer W1 or the lower wafer W2 while rotating the upper wafer W1 or the lower wafer W2 held by, for example, a spin chuck. As a result, the pure water diffuses onto the bonding surfaces W1j, W2j, and OH groups are attached to the dangling bonds of Si, thereby hydrophilizing the bonding surfaces W1j, W2j.

[0021] The second processing block G2 is provided with a bonding apparatus 41 and a substrate temperature adjustment apparatus 42. The bonding apparatus 41 bonds a hydrophilized upper wafer W1 and a lower wafer W2 to produce a laminated wafer T. The substrate temperature adjustment apparatus 42 adjusts the temperatures of the upper wafer W1 and the lower wafer W2 before bonding. Details of the bonding apparatus 41 will be described later with reference to FIGS. 7 to 9.

[0022] As shown in FIG. 2, in the third processing block G3, a position adjustment device 51 and transition devices 53 and 54 are stacked in this order from top to bottom. The locations of the devices in the third processing block G3 are not limited to those shown in FIG. 2. The position adjustment device 51 adjusts the horizontal orientations of the upper wafer W1 and the lower wafer W2. The position adjustment device 51 also turns the upper wafer W1 upside down so that the bonding surface W1j of the upper wafer W1 faces downward. The upper wafer W1 is temporarily placed on the transition device 53. The lower wafer W2 and the overlapped wafer T are temporarily placed on the transition device 54.

[0023] The substrate processing apparatus 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control device 90 controls the operation of the substrate processing apparatus 1 by having the CPU 91 execute the programs stored in the storage medium 92.

[0024] Next, the substrate processing method of this embodiment will be described with reference to Fig. 4. Steps S101 to S109 shown in Fig. 4 are performed under the control of the control device 90.

[0025] First, the cassette C1 accommodating a plurality of upper wafers W1, the cassette C2 accommodating a plurality of lower wafers W2, and the empty cassette C3 are placed on the placement table 10 of the carry-in / out station 2.

[0026] Next, the transfer device 22 takes out the upper wafer W1 in the cassette C1 and transfers it to the transition device 53 in the third processing block G3 of the processing station 3. Thereafter, the transfer device 61 takes out the upper wafer W1 from the transition device 53 and transfers it to the surface modification device 33 in the first processing block G1.

[0027] Next, the surface modification device 33 modifies the bonding surface W1j of the upper wafer W1 (step S101). The modification of the bonding surface W1j is performed with the bonding surface W1j facing upward. Thereafter, the transfer device 61 takes out the upper wafer W1 from the surface modification device 33 and transfers it to the surface hydrophilization device .

[0028] Next, the surface hydrophilization device 34 hydrophilizes the bonding surface W1j of the upper wafer W1 (step S102). The hydrophilization of the bonding surface W1j is performed with the bonding surface W1j facing upward. Thereafter, the transfer device 61 takes out the upper wafer W1 from the surface hydrophilization device 34 and transfers it to the position adjustment device 51 of the third processing block G3.

[0029] Next, the position adjustment device 51 adjusts the horizontal orientation of the upper wafer W1 and turns the upper wafer W1 upside down (step S103). As a result, the notch N (see FIG. 12) of the upper wafer W1 is oriented in a predetermined direction, and the bonding surface W1j of the upper wafer W1 faces downward. Thereafter, the transfer device 61 takes out the upper wafer W1 from the position adjustment device 51 and transfers it to the substrate temperature adjustment device 42 in the second processing block G2.

[0030] Next, the substrate temperature adjustment device 42 adjusts the temperature of the upper wafer W1 (step S104). The temperature adjustment of the upper wafer W1 is performed with the bonding surface W1j of the upper wafer W1 facing downward. Thereafter, the transfer device 61 takes out the upper wafer W1 from the substrate temperature adjustment device 42 and transfers it to the bonding device 41.

[0031] In parallel with the above-mentioned processing for the upper wafer W1, the following processing for the lower wafer W2 is performed. First, the transfer device 22 takes out the lower wafer W2 from the cassette C2 and transfers it to the transition device 54 in the third processing block G3 of the processing station 3. Then, the transfer device 61 takes out the lower wafer W2 from the transition device 54 and transfers it to the surface modification device 33 in the first processing block G1.

[0032] Next, the surface modification device 33 modifies the bonding surface W2j of the lower wafer W2 (step S105). The modification of the bonding surface W2j is performed with the bonding surface W2j facing upward. Thereafter, the transfer device 61 takes out the lower wafer W2 from the surface modification device 33 and transfers it to the surface hydrophilization device .

[0033] Next, the surface hydrophilization device 34 hydrophilizes the bonding surface W2j of the lower wafer W2 (step S106). The hydrophilization of the bonding surface W2j is performed with the bonding surface W2j facing upward. Thereafter, the transfer device 61 takes out the lower wafer W2 from the surface hydrophilization device 34 and transfers it to the position adjustment device 51 of the third processing block G3.

[0034] Next, the position adjustment device 51 adjusts the horizontal orientation of the lower wafer W2 (step S107). As a result, the notch N of the lower wafer W2 is oriented in a predetermined direction. Thereafter, the transfer device 61 takes out the lower wafer W2 from the position adjustment device 51 and transfers it to the substrate temperature adjustment device 42 in the second processing block G2.

[0035] Next, the substrate temperature adjustment device 42 adjusts the temperature of the lower wafer W2 (step S108). The temperature adjustment of the lower wafer W2 is performed with the bonding surface W2j of the lower wafer W2 facing upward. Thereafter, the transfer device 61 takes out the lower wafer W2 from the substrate temperature adjustment device 42 and transfers it to the bonding device 41.

[0036] Next, the bonding device 41 bonds the upper wafer W1 and the lower wafer W2 to produce the overlapped wafer T (step S109). Thereafter, the transfer device 61 takes out the overlapped wafer T from the bonding device 41 and transfers it to the transition device 54 in the third processing block G3.

[0037] Finally, the transfer device 22 takes out the overlapped wafer T from the transition device 54, and transfers it to the cassette C3 on the mounting table 10. This completes a series of processes.

[0038] Next, an example of the transfer device 61 will be described with reference to FIG. 5. The transfer device 61 includes a first holding unit 62a, a second holding unit 62b provided below the first holding unit 62a, and a first driving unit 64. The first holding unit 62a is disposed above the second holding unit 62b to face each other. The second holding unit 62b holds the upper wafer W1 with the bonding surface W1j of the upper wafer W1 facing upward before step S103. On the other hand, the first holding unit 62a holds the upper wafer W1 with the bonding surface W1j of the upper wafer W1 facing downward after the above step S103 and before the above step S109. In addition, the second holding unit 62b holds the lower wafer W2 with the bonding surface W2j of the lower wafer W2 facing upward before the above step S109.

[0039] The first holding unit 62a is connected to a vacuum pump 62a2 via a suction pipe 62a1, and vacuum-adsorbs the upper wafer W1 by operation of the vacuum pump 62a2. Meanwhile, the second holding unit 62b is connected to a vacuum pump 62b2 via a suction pipe 62b1, and vacuum-adsorbs the lower wafer W2 by operation of the vacuum pump 62b2.

[0040] The first driving unit 64 is connected to the first holding unit 62a and the second holding unit 62b. The first driving unit 64 drives the first holding unit 62a and the second holding unit 62b to move them integrally in the vertical direction, the horizontal direction, and around the vertical axis relative to the base 65. Although not shown, the first driving unit 64 includes a driving source such as a motor and a power transmission mechanism such as a belt.

[0041] When transporting the upper wafer W1 and the lower wafer W2 to the bonding device 41, the transport device 61 holds the upper wafer W1 with the first holding portion 62a and holds the lower wafer W2 with the second holding portion 62b, and transports the upper wafer W1 and the lower wafer W2 together.

[0042] The transfer device 61 further includes a third holding unit 62c, a fourth holding unit 62d, and a second driving unit 66. The fourth holding unit 62d is disposed above and facing the third holding unit 62c. After step S109, the third holding unit 62c holds the overlapped wafer T with the upper wafer W1 facing upward. On the other hand, the fourth holding unit 62d holds a wafer for testing.

[0043] The third holding unit 62c is connected to a vacuum pump 62c2 via a suction pipe 62c1, and by operating the vacuum pump 62c2, it vacuum-adsorbs, for example, the laminated wafer T. The fourth holding unit 62d is connected to a vacuum pump 62d2 via a suction pipe 62d1, and by operating the vacuum pump 62d2, it vacuum-adsorbs a test wafer.

[0044] The second driving unit 66 is connected to the third holding unit 62c and the fourth holding unit 62d. The second driving unit 66 drives the third holding unit 62c and the fourth holding unit 62d to move them together in the vertical direction, the horizontal direction, and around the vertical axis relative to the base 65. Although not shown, the second driving unit 66 includes a driving source such as a motor and a power transmission mechanism such as a belt.

[0045] The transfer device 61 uses the first holding part 62a and the second holding part 62b to carry the upper wafer W1 and the lower wafer W2 into the bonding device 41, and uses the third holding part 62c to carry the overlapped wafer T out of the bonding device 41. The carry-out of the overlapped wafer T produced in the nth (n is a natural number equal to or greater than 1) bonding and the carry-in of the upper wafer W1 and the lower wafer W2 to be bonded in the n+1th bonding are performed consecutively. Note that the configuration of the transfer device 61 is not limited to the configuration shown in FIG.

[0046] Next, an example of the position adjustment device 51 will be described with reference to Fig. 6. The position adjustment device 51 has a base 51a, a holding unit 51b that suction-holds and rotates the upper wafer W1 and the lower wafer W2, a detection unit 51c that detects the positions of the notches N of the upper wafer W1 and the lower wafer W2, and a base inversion unit 51d that inverts the base 51a.

[0047] While the holder 51b holds and rotates the upper wafer W1 by suction, the detector 51c detects the position of the notch N of the upper wafer W1, thereby adjusting the position of the notch N and adjusting the horizontal orientation of the upper wafer W1. The horizontal orientation of the lower wafer W2 is similarly adjusted.

[0048] The base inverting unit 51d is equipped with, for example, a motor and turns the base 51a upside down, and turns the upper wafer W1 held by the holder 51b upside down, so that the bonding surface W1j of the upper wafer W1 faces downward.

[0049] Next, an example of the bonding apparatus 41 will be described with reference to Fig. 7 to Fig. 9. As shown in Fig. 7, the bonding apparatus 41 has a processing container 210 whose interior can be sealed. A transfer port 211 is formed on the side of the processing container 210 facing the transfer region 60, and the transfer port 211 is provided with an opening / closing shutter 212. The upper wafer W1, the lower wafer W2, and the overlapped wafer T are transferred in and out through the transfer port 211.

[0050] 8, an upper chuck 230 and a lower chuck 231 are provided inside the processing vessel 210. The upper chuck 230 holds the upper wafer W1 from above with the bonding surface W1j of the upper wafer W1 facing downward. The lower chuck 231 is provided below the upper chuck 230 and holds the lower wafer W2 from below with the bonding surface W2j of the lower wafer W2 facing upward.

[0051] The upper chuck 230 is supported by a support member 280 provided on the ceiling surface of the processing vessel 210. On the other hand, the lower chuck 231 is supported by a first lower chuck moving part 291 provided below the lower chuck 231.

[0052] As described below, the first lower chuck moving part 291 moves the lower chuck 231 in the horizontal direction (Y-axis direction). Moreover, the first lower chuck moving part 291 is configured to be capable of moving the lower chuck 231 in the vertical direction and to rotate the lower chuck 231 about a vertical axis.

[0053] The first lower chuck moving part 291 is provided on the lower surface side of the first lower chuck moving part 291 and is attached to a pair of rails 295 extending in the horizontal direction (Y-axis direction). The first lower chuck moving part 291 is configured to be movable along the rails 295. The rails 295 are provided on a second lower chuck moving part 296.

[0054] The second lower chuck moving part 296 is provided on the lower surface side of the second lower chuck moving part 296 and is attached to a pair of rails 297 extending in the horizontal direction (X-axis direction). The second lower chuck moving part 296 is configured to be movable along the rails 297, that is, to move the lower chuck 231 in the horizontal direction (X-axis direction). The pair of rails 297 are provided on a mounting table 298 provided on the bottom surface of the processing vessel 210.

[0055] The first lower chuck moving part 291 and the second lower chuck moving part 296 constitute a moving mechanism 290. The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 between a substrate transfer position and a joining position.

[0056] The substrate transfer position is a position where the upper chuck 230 receives the upper wafer W1 from the transfer device 61, the lower chuck 231 receives the lower wafer W2 from the transfer device 61, and the lower chuck 231 transfers the overlapped wafer T to the transfer device 61. The substrate transfer position is a position where the overlapped wafer T produced in the nth (n is a natural number equal to or greater than 1) bonding is successively carried out, and the upper wafer W1 and lower wafer W2 to be bonded in the n+1th bonding are carried in. The substrate transfer position is, for example, a position shown in FIGS. 7 and 8.

[0057] The transfer device 61 advances into a position directly below the upper chuck 230 when transferring the upper wafer W1 to the upper chuck 230. The transfer device 61 also advances into a position directly above the lower chuck 231 when receiving the overlapped wafer T from the lower chuck 231 and transferring the lower wafer W2 to the lower chuck 231. To facilitate the advancement of the transfer device 61, the upper chuck 230 and the lower chuck 231 are shifted laterally, and the vertical distance between the upper chuck 230 and the lower chuck 231 is also large.

[0058] On the other hand, the bonding position is a position where the upper wafer W1 and the lower wafer W2 are faced to each other with a predetermined distance between them and bonded. The bonding position is, for example, the position shown in Fig. 9. At the bonding position, the distance between the upper wafer W1 and the lower wafer W2 in the vertical direction is narrower than at the substrate transfer position. Also, at the bonding position, unlike the substrate transfer position, the upper wafer W1 and the lower wafer W2 overlap when viewed in the vertical direction.

[0059] The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction. In this embodiment, the moving mechanism 290 moves the lower chuck 231, but it may move either the lower chuck 231 or the upper chuck 230, or may move both. In addition, the moving mechanism 290 may rotate the upper chuck 230 or the lower chuck 231 around the vertical axis.

[0060] 9, upper chuck 230 is partitioned into a plurality of (e.g., three) regions 230a, 230b, and 230c. These regions 230a, 230b, and 230c are provided in this order from the center toward the periphery of upper chuck 230. Region 230a has a circular shape in a plan view, and regions 230b and 230c have annular shapes in a plan view.

[0061] Suction pipes 240a, 240b, and 240c are provided independently for the respective regions 230a, 230b, and 230c. Different vacuum pumps 241a, 241b, and 241c are connected to the respective suction pipes 240a, 240b, and 240c. The upper chuck 230 can vacuum-suck the upper wafer W1 for each of the regions 230a, 230b, and 230c.

[0062] The upper chuck 230 is provided with a plurality of holding pins 245 that are vertically movable. The plurality of holding pins 245 are connected to a vacuum pump 246, and vacuum-suck the upper wafer W1 by operation of the vacuum pump 246. The upper wafer W1 is vacuum-sucked to the lower ends of the plurality of holding pins 245.

[0063] The multiple holding pins 245 move downward to protrude from the holding surface of the upper chuck 230. In this state, the multiple holding pins 245 vacuum-suck the upper wafer W1 and receive it from the transfer device 61. Thereafter, the multiple holding pins 245 move upward to bring the upper wafer W1 into contact with the holding surface of the upper chuck 230. Next, the upper chuck 230 horizontally vacuum-sucks the upper wafer W1 in each of the regions 230a, 230b, and 230c by operation of the vacuum pumps 241a, 241b, and 241c.

[0064] Further, a through hole 243 that passes through the upper chuck 230 in the vertical direction is formed in the center of the upper chuck 230. A pressing part 250, which will be described later, is inserted into the through hole 243. The pressing part 250 presses down the center of the upper wafer W1, which is disposed at a distance from the lower wafer W2, to bring the upper wafer W1 into contact with the lower wafer W2.

[0065] The pushing part 250 has a pushing pin 251 and an outer cylinder 252 which is an elevation guide for the pushing pin 251. The pushing pin 251 is inserted into the through hole 243 by, for example, a driving part (not shown) having a built-in motor, protrudes from the holding surface of the upper chuck 230, and pushes down the center of the upper wafer W1.

[0066] The lower chuck 231 is partitioned into a plurality of (for example, two) regions 231a and 231b. These regions 231a and 231b are provided in this order from the center toward the periphery of the lower chuck 231. The region 231a has a circular shape in a plan view, and the region 231b has an annular shape in a plan view.

[0067] Suction pipes 260a and 260b are provided independently for the respective regions 231a and 231b. Different vacuum pumps 261a and 261b are connected to the respective suction pipes 260a and 260b. The lower chuck 231 can vacuum-suck the lower wafer W2 for each of the regions 231a and 231b.

[0068] A plurality of holding pins 265 that can be raised and lowered in the vertical direction are provided on the lower chuck 231. The lower wafer W2 is placed on the upper ends of the plurality of holding pins 265. The lower wafer W2 may be vacuum-sucked to the upper ends of the plurality of holding pins 265.

[0069] As the multiple holding pins 265 rise, they protrude from the holding surface of the lower chuck 231. In this state, the multiple holding pins 265 receive the lower wafer W2 from the transfer device 61. Thereafter, the multiple holding pins 265 descend, and the lower wafer W2 is brought into contact with the holding surface of the lower chuck 231. Next, the upper chuck 230 horizontally vacuum-sucks the lower wafer W2 in each of the regions 231a and 231b by operation of the vacuum pumps 261a and 261b.

[0070] Next, details of step S109 in Fig. 4 will be described mainly with reference to Fig. 10 and Fig. 11. First, the transfer device 61 loads the upper wafer W1 and the lower wafer W2 into the bonding device 41 at a substrate load / unload position shown by a two-dot chain line in Fig. 7 (step S111). The substrate load / unload position is a position outside the processing vessel 210 and adjacent to the load / unload opening 211 of the processing vessel 210. In step S111, the relative position of the upper chuck 230 and the lower chuck 231 is the substrate transfer position shown in Fig. 7 and Fig. 8.

[0071] Specifically, first, the transfer device 61 transfers the upper wafer W1 directly below the upper chuck 230. Next, the multiple holding pins 245 move down and receive the upper wafer W1 from the transfer device 61. After that, the multiple holding pins 245 move up and the upper wafer W1 is brought into contact with the holding surface of the upper chuck 230. Next, the upper chuck 230 holds the upper wafer W1 from above.

[0072] Next, the transfer device 61 transfers the lower wafer W2 directly above the lower chuck 231. Then, the multiple holding pins 265 move up and receive the lower wafer W2 from the transfer device 61. Thereafter, the multiple holding pins 265 move down and the lower wafer W2 is brought into contact with the holding surface of the lower chuck 231. Next, the lower chuck 231 holds the lower wafer W2 from below.

[0073] Next, the moving mechanism 290 moves the relative position of the upper chuck 230 and the lower chuck 231 from the substrate transfer position shown in Fig. 7 and Fig. 8 to the bonding position shown in Fig. 9 (step S112). As a result, the upper wafer W1 and the lower wafer W2 are arranged opposite each other with a predetermined gap therebetween. The gap is, for example, 80 µm to 200 µm. Furthermore, when viewed in the vertical direction, the alignment mark of the upper wafer W1 and the alignment mark of the lower wafer W2 overlap with each other.

[0074] Next, the operation of the vacuum pump 241a is stopped, and the vacuum suction of the upper wafer W1 in the region 230a is released, as shown in Fig. 11(A). After that, the pushing pin 251 of the pushing part 250 descends, pushing down the center of the upper wafer W1 and bringing it into contact with the lower wafer W2 (step S113). As a result, the centers of the upper wafer W1 and the lower wafer W2 are bonded together.

[0075] Since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 have been modified, van der Waals forces (intermolecular forces) are generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are bonded to each other. Furthermore, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 have been hydrophilized, hydrophilic groups (e.g., OH groups) form hydrogen bonds, and the bonding surfaces W1j and W2j are firmly bonded to each other.

[0076] Next, the operation of the vacuum pump 241b is stopped, and the vacuum suction of the upper wafer W1 in the region 230b is released as shown in Fig. 11(B). Subsequently, the operation of the vacuum pump 241c is stopped, and the vacuum suction of the upper wafer W1 in the region 230c is released as shown in Fig. 11(C).

[0077] In this manner, the vacuum suction of the upper wafer W1 is released stepwise from the center to the periphery, and the upper wafer W1 drops stepwise onto and comes into contact with the lower wafer W2. Then, the bonding of the upper wafer W1 and the lower wafer W2 progresses sequentially from the center to the periphery (step S114). As a result, the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 come into contact over their entire surfaces, the upper wafer W1 and the lower wafer W2 are bonded together, and an overlapped wafer T is obtained. After that, the pushing pin 251 is raised to its original position.

[0078] Next, the moving mechanism 290 moves the relative position of the upper chuck 230 and the lower chuck 231 from the joining position shown in Fig. 9 to the substrate transfer position shown in Fig. 7 and Fig. 8 (step S115). For example, the moving mechanism 290 first lowers the lower chuck 231 to widen the vertical distance between the lower chuck 231 and the upper chuck 230. Next, the moving mechanism 290 moves the lower chuck 231 laterally to laterally shift the lower chuck 231 and the upper chuck 230.

[0079] 7, the transfer device 61 transfers the overlapped wafer T to the bonding device 41 (step S116). Specifically, first, the lower chuck 231 releases the overlapped wafer T. Then, the multiple holding pins 265 rise and transfer the overlapped wafer T to the transfer device 61. After that, the multiple holding pins 265 descend to their original positions.

[0080] The transport device 61 continuously transports out the overlapped wafer T produced in the nth (n is a natural number greater than or equal to 1) bonding and transports in the upper wafer W1 and the lower wafer W2 to be bonded in the n+1th bonding.

[0081] Next, an example of the displacement detection unit 220 will be described with reference to Fig. 12 and Fig. 13. The displacement detection unit 220 detects a downward displacement of the upper wafer W1 relative to the upper chuck 230 at a point away from the center of the upper wafer W1. The displacement detection unit 220 may detect the separation of the upper wafer W1 from the upper chuck 230, or may detect the contact between the upper wafer W1 and the lower wafer. There is a time lag between the separation of the upper wafer W1 from the upper chuck 230 and the contact with the lower wafer W2. When the upper wafer W1 contacts the lower wafer W2, the distance between the upper wafer W1 and the lower wafer W2 becomes a predetermined distance.

[0082] The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1. For example, as shown in Fig. 13, the displacement detection unit 220 includes a nozzle 221 that sucks or discharges gas. The tip of the nozzle 221 is disposed above the holding surface of the upper chuck 230 and is disposed at a distance from the upper wafer W1.

[0083] The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1 by detecting the flow rate of the gas from the nozzle 221. Whether the nozzle 221 sucks in gas or ejects gas, the smaller the distance between the upper chuck 230 and the upper wafer W1, the higher the flow resistance of the gas, and the lower the flow rate of the gas. The relationship between the gas flow rate and the distance is determined in advance by an experiment, and the data stored in the storage medium 92 is read out and used.

[0084] The displacement detection unit 220 may measure the distance between the upper chuck 230 and the upper wafer W1 using ultrasonic waves, light, or an image. For example, the displacement detection unit 220 irradiates the upper wafer W1 with ultrasonic waves or light, receives the reflected wave or reflected light, and measures the distance between the upper chuck 230 and the upper wafer W1. The measurement method is, for example, a confocal method, a spectroscopic interference method, a triangulation method, or the like. The light source is, for example, an LED, a laser, or the like.

[0085] The displacement detection unit 220 may capture an image of the upper chuck 230 and the upper wafer W1 from the side, process the image, and measure the distance between the upper chuck 230 and the upper wafer W1.

[0086] The displacement detection unit 220 may receive reflected light from the upper wafer W1 and measure the distance between the upper chuck 230 and the upper wafer W1 based on the amount of light received. The upper wafer W1 becomes tilted on the way from when it is released from the upper chuck 230 to when it is brought into contact with the lower wafer W2. At this time, the amount of reflected light received temporarily decreases. The relationship between the amount of reflected light received and the distance is determined in advance by an experiment, and the data stored in the storage medium 92 is read out and used.

[0087] The displacement detection unit 220 may measure the distance between the upper chuck 230 and the upper wafer W1 by measuring the capacitance between the displacement detection unit 220 and the upper wafer W1. The narrower the distance between the upper chuck 230 and the upper wafer W1, the narrower the gap between the displacement detection unit 220 and the upper wafer W1, and the larger the capacitance. The relationship between the capacitance and the distance is obtained in advance by an experiment, and the data stored in the storage medium 92 is read out and used.

[0088] Although the displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1, it may simply detect the separation of the upper wafer W1 from the upper chuck 230. However, there is a time lag between the separation of the upper wafer W1 from the upper chuck 230 and the contact with the lower wafer W2. When measuring the distance, the timing at which the upper wafer W1 and the lower wafer W2 come into contact with each other can be detected more accurately than when detecting the separation.

[0089] The speed of bonding of the upper wafer W1 and the lower wafer W2 may be anisotropic, as shown in FIG. 12. In FIG. 12, the hatched area A is an area that has been bonded at a certain timing. In FIG. 12, (100) is a plane index, and [0-11],

[0001] ,

[0011] , and

[0010] are directional indexes. A negative Miller index is usually expressed by adding a "-" (bar) above the number, but in this specification, it is expressed by adding a negative sign before the number. The Miller indices shown in FIG. 12 are for a single crystal silicon wafer.

[0090] The speed at which the upper wafer W1 and the lower wafer W2 are bonded changes in a 90° cycle because the Young's modulus, Poisson's ratio, and shear modulus of the single crystal silicon wafer change in a 90° cycle.

[0091] 12, the displacement detection units 220 are provided in both the direction in which the bonding progresses fastest and the direction in which the bonding progresses slowest, thereby making it possible to detect the anisotropy of the bonding progress speed.

[0092] The displacement detectors 220 are provided in a direction in which the bonding progress speed is the fastest, and detect the downward displacement of the upper wafer W1 at a plurality of points at different distances from the center of the upper wafer W1, thereby making it possible to detect the fastest bonding progress speed.

[0093] Further, the displacement detection units 220 are provided in a plurality of positions in the direction in which the bonding progress speed is the slowest, and detect the downward displacement of the upper wafer W1 at a plurality of points at different distances from the center of the upper wafer W1. This makes it possible to detect the slowest bonding speed in the same direction.

[0094] The displacement detection unit 220 transmits a signal indicating the detection result to the control device 90. The control device 90 monitors the progress of the bonding of the upper wafer W1 and the lower wafer W2 from the center to the periphery using the detection result of the displacement detection unit 220. For example, the control device 90 uses the multiple displacement detection units 220 to determine the progress speed of the bonding of the upper wafer W1 and the lower wafer W2, or to determine whether the bonding of the upper wafer W1 and the lower wafer W2 has been successful.

[0095] Next, a first example of the timing for transmitting a preparation command to the transport device 61 will be described with reference to Fig. 14. Steps S201 to S208 shown in Fig. 14 are performed under the control of the control device 90.

[0096] First, the pushing unit 250 starts to push down the center of the upper wafer W1 (step S201). Specifically, the pushing pin 251 of the pushing unit 250 starts to move down. After that, the control device 90 measures the elapsed time from step S201 using a timer.

[0097] Next, the control device 90 checks whether or not a set time has elapsed since step S201 (step S202). If the set time has not elapsed (step S202, NO), the control device 90 executes the above step S202 again after a unit time has elapsed.

[0098] On the other hand, if the set time has elapsed (step S202, YES), the bonding between the upper wafer W1 and the lower wafer W2 has progressed sufficiently, so the upper chuck 230 releases the holding of the peripheral edge of the upper wafer W1 (step S203). As a result, the peripheral edge of the upper wafer W1 drops and comes into contact with the peripheral edge of the lower wafer W2, completing the bonding process and obtaining the overlapped wafer T.

[0099] Next, the moving mechanism 290 starts moving the lower chuck 231 (step S204). The lower chuck 231 starts moving from the bonding position toward the substrate transfer position. First, the lower chuck 231 is lowered, and then shifted laterally.

[0100] Next, the moving mechanism 290 completes the movement of the lower chuck 231 (step S205). The lower chuck 231 stops at the substrate transfer position. Thereafter, the laminated wafer T produced in the nth bonding is unloaded, and the upper wafer W1 and the lower wafer W2 to be bonded in the n+1th bonding are loaded in succession. Hereinafter, this series of operations will also be referred to as loading the upper wafer W1, etc.

[0101] In order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S205) to the start of loading of the upper wafer W1, the control device 90 transmits a preparation command to the transfer device 61 before the completion of the movement of the lower chuck 231. The timing of transmitting the preparation command to the transfer device 61 will be described below.

[0102] First, the control device 90 checks whether or not a set time has elapsed since the start of pressing by the pressing portion 250 (step S201) (step S206). If the set time has not elapsed (step S206, NO), the control device 90 performs the above step S206 again after a unit time has elapsed.

[0103] On the other hand, if the set time has elapsed (step S206, YES), the control device 90 transmits a preparation command to the transfer device 61 (step S207). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature adjustment device 42, and starts moving toward the substrate transfer position indicated by the two-dot chain line in FIG.

[0104] It is not necessary to provide the substrate temperature adjustment device 42. In that case, when the transfer device 61 receives the preparation command, it takes out the upper wafer W1 and the lower wafer W2 from the position adjustment device 51 and starts moving toward the substrate transfer position shown by the two-dot chain line in FIG.

[0105] Next, the transport device 61 completes the movement to the substrate loading / unloading position (step S208). If the timing of the completion of the movement of the transport device 61 (step S208) is simultaneous with or before the timing of the completion of the movement of the lower chuck 231 (step S205), the waiting time becomes zero, and the operating rate of the bonding device 41 is improved.

[0106] As described above, the control device 90, triggered by the pushing down of the upper wafer W1 by the pushing unit 250 (step S201), sends a preparation command to the transfer device 61 and causes the transfer device 61 to start moving toward the substrate loading / unloading position. Compared to the case where the transfer device 61 starts moving toward the substrate loading / unloading position after the movement of the lower chuck 231 is completed (step S205), the waiting time from the completion of the movement of the lower chuck 231 to the start of loading of the upper wafer W1 can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

[0107] The control device 90 causes the transport device 61 to arrive at the substrate loading / unloading position simultaneously with or before the completion of the movement of the lower chuck 231 (step S205), that is, simultaneously with or before the lower chuck 231 returns to the substrate transfer position. This makes it possible to eliminate the waiting time from the completion of the movement of the lower chuck 231 to the start of loading the upper wafer W1, etc., and thus improves the throughput of the substrate processing apparatus 1.

[0108] The control device 90 transmits a preparation command to the transfer device 61 after a set time has elapsed since the pushing unit 250 starts to push down the upper wafer W1 (step S201), and causes the transfer device 61 to start moving toward the substrate loading / unloading position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S208) to the start of loading, etc. of the upper wafer W1. This makes it possible to improve the operating rate of the transfer device 61. In addition, it is possible to suppress temperature changes in the upper wafer W1 and the lower wafer W2.

[0109] Next, a second example of the timing for transmitting a preparation command to the transport device 61 will be described with reference to Fig. 15. Steps S301 to S309 shown in Fig. 15 are performed under the control of the control device 90.

[0110] First, the pushing portion 250 starts to push down the center of the upper wafer W1 (step S301). Specifically, the pushing pin 251 of the pushing portion 250 starts to move down.

[0111] Next, the displacement detection unit 220 detects a downward displacement of the upper wafer W1 relative to the upper chuck 230 at a point away from the center of the upper wafer W1 (step S302). The displacement detection unit 220 may detect the separation of the upper wafer W1 from the upper chuck 230, or may detect the contact between the upper wafer W1 and the lower wafer W2.

[0112] Thereafter, the control device 90 measures the elapsed time from step S302 using a timer. The number and combination of the displacement detection units 220 used here are not particularly limited, but are set in advance and stored in the storage medium 92. When all of the preset displacement detection units 220 have detected the displacement, measurement by the timer begins.

[0113] Next, the control device 90 checks whether or not a set time has elapsed since step S302 (step S303). If the set time has not elapsed (step S303, NO), the control device 90 performs the above step S303 again after a unit time has elapsed.

[0114] On the other hand, if the set time has elapsed (step S303, YES), the bonding between the upper wafer W1 and the lower wafer W2 has progressed sufficiently, so the upper chuck 230 releases the edge of the upper wafer W1 (step S304). As a result, the edge of the upper wafer W1 drops and comes into contact with the edge of the lower wafer W2, completing the bonding process and obtaining the overlapped wafer T.

[0115] Next, the moving mechanism 290 starts moving the lower chuck 231 (step S305). The lower chuck 231 starts moving from the bonding position toward the substrate transfer position. The lower chuck 231 is lowered and then shifted laterally.

[0116] Next, the moving mechanism 290 completes the movement of the lower chuck 231 (step S306). The lower chuck 231 stops at the substrate transfer position. After that, the unloading of the overlapped wafer T produced in the n-th bonding and the loading of the upper wafer W1 and the lower wafer W2 to be bonded in the n+1-th bonding are performed in succession. Hereinafter, this series of operations will also be referred to as the loading of the upper wafer W1, etc.

[0117] In order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S306) to the start of loading of the upper wafer W1, the control device 90 transmits a preparation command to the transfer device 61 before the completion of the movement of the lower chuck 231. The timing of transmitting the preparation command to the transfer device 61 will be described below.

[0118] First, the control device 90 checks (step S307) whether or not a set time has elapsed since the detection of the displacement by the displacement detection unit 220 (step S302). If the set time has not elapsed (step S307, NO), the control device 90 performs the above step S307 again after the unit time has elapsed.

[0119] On the other hand, if the set time has elapsed (step S307, YES), the control device 90 transmits a preparation command to the transfer device 61 (step S308). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature adjustment device 42, and starts moving toward the substrate transfer position indicated by the two-dot chain line in FIG.

[0120] It is not necessary to provide the substrate temperature adjustment device 42. In that case, when the transfer device 61 receives the preparation command, it takes out the upper wafer W1 and the lower wafer W2 from the position adjustment device 51 and starts moving toward the substrate transfer position shown by the two-dot chain line in FIG.

[0121] Next, the transport device 61 completes the movement to the substrate loading / unloading position (step S309). If the timing of the completion of the movement of the transport device 61 (step S309) is simultaneous with or before the timing of the completion of the movement of the lower chuck 231 (step S306), the waiting time becomes zero, and the operating rate of the bonding device 41 is improved.

[0122] As described above, the control device 90, triggered by the detection of displacement by the displacement detection unit 220 (step S302), transmits a preparation command to the transfer device 61 and starts moving the transfer device 61 toward the substrate loading / unloading position. Compared to the case where the transfer device 61 starts moving toward the substrate loading / unloading position after the movement of the lower chuck 231 is completed (step S306), the waiting time from the completion of the movement of the lower chuck 231 to the start of loading the upper wafer W1 can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

[0123] The control device 90 causes the transport device 61 to arrive at the substrate loading / unloading position simultaneously with or before the completion of the movement of the lower chuck 231 (step S306), that is, simultaneously with or before the lower chuck 231 returns to the substrate transfer position. This makes it possible to eliminate the waiting time from the completion of the movement of the lower chuck 231 to the start of loading, etc., of the upper wafer W1, thereby further improving the throughput of the substrate processing apparatus 1.

[0124] The control device 90 transmits a preparation command to the transfer device 61 after a set time has elapsed since the displacement detection unit 220 detected the displacement (step S302), and causes the transfer device 61 to start moving toward the substrate loading / unloading position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S309) until the start of loading the upper wafer W1, etc. This makes it possible to improve the operating rate of the transfer device 61. In addition, it is possible to suppress temperature changes in the upper wafer W1 and the lower wafer W2.

[0125] The progress of bonding of the upper wafer W1 and the lower wafer W2 can be monitored by using the displacement detection unit 220. If the progress of bonding cannot be monitored, the waiting time from when the pushing unit 250 starts to push down the upper wafer W1 (S201 in FIG. 14) until the upper chuck 230 releases its hold on the edge of the upper wafer W1 (S203 in FIG. 14) would have to be set longer to be on the safe side. By monitoring the progress of bonding using the displacement detection unit 220, the unnecessary waiting time can be shortened.

[0126] Next, a third example of the timing for transmitting a preparation command to the transport device 61 will be described with reference to Fig. 16. Steps S401 to S408 shown in Fig. 16 are performed under the control of the control device 90.

[0127] First, the pushing unit 250 starts to push down the center of the upper wafer W1 (step S401). Specifically, the pushing pin 251 of the pushing unit 250 starts to move down. After that, the control device 90 measures the elapsed time from step S401 using a timer.

[0128] Next, the control device 90 checks whether or not a set time has elapsed since step S401 (step S402). If the set time has not elapsed (step S402, NO), the control device 90 executes the above step S402 again after a unit time has elapsed.

[0129] On the other hand, if the set time has elapsed (step S402, YES), the bonding between the upper wafer W1 and the lower wafer W2 has progressed sufficiently, so the upper chuck 230 releases the holding of the peripheral edge of the upper wafer W1 (step S403). As a result, the peripheral edge of the upper wafer W1 drops and comes into contact with the peripheral edge of the lower wafer W2, completing the bonding process and obtaining the overlapped wafer T.

[0130] Next, the moving mechanism 290 starts moving the lower chuck 231 (step S404). The lower chuck 231 starts moving from the bonding position toward the substrate transfer position. The lower chuck 231 is lowered and then shifted laterally.

[0131] Next, the moving mechanism 290 completes the movement of the lower chuck 231 (step S405). The lower chuck 231 stops at the substrate transfer position. After that, the laminated wafer T produced in the nth bonding is unloaded, and the upper wafer W1 and the lower wafer W2 to be bonded in the n+1th bonding are loaded in succession. Hereinafter, this series of operations will also be referred to as loading the upper wafer W1, etc.

[0132] In order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S405) to the start of loading of the upper wafer W1, the control device 90 transmits a preparation command to the transfer device 61 before the completion of the movement of the lower chuck 231. The timing of transmitting the preparation command to the transfer device 61 will be described below.

[0133] First, the control device 90 checks (step S406) whether or not a set time has elapsed since the start of movement of the lower chuck 231 (step S404). If the set time has not elapsed (step S406, NO), the control device 90 executes the above step S406 again after a unit time has elapsed.

[0134] On the other hand, if the set time has elapsed (step S406, YES), the control device 90 transmits a preparation command to the transfer device 61 (step S407). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature adjustment device 42, and starts moving toward the substrate transfer position indicated by the two-dot chain line in FIG.

[0135] It is not necessary to provide the substrate temperature adjustment device 42. In that case, when the transfer device 61 receives the preparation command, it takes out the upper wafer W1 and the lower wafer W2 from the position adjustment device 51 and starts moving toward the substrate transfer position shown by the two-dot chain line in FIG.

[0136] Next, the transport device 61 completes the movement to the substrate loading / unloading position (step S408). If the timing of the completion of the movement of the transport device 61 (step S408) is simultaneous with or before the timing of the completion of the movement of the lower chuck 231 (step S405), the waiting time becomes zero, and the operating rate of the bonding device 41 is improved.

[0137] As described above, the control device 90, triggered by the start of movement of the lower chuck 231 (step S404), transmits a preparation command to the transfer device 61 and causes the transfer device 61 to start moving toward the substrate loading / unloading position. Compared to the case where the transfer device 61 starts moving toward the substrate loading / unloading position after the movement of the lower chuck 231 is completed (step S405), the waiting time from the completion of the movement of the lower chuck 231 to the start of loading, etc. of the upper wafer W1 can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

[0138] The control device 90 causes the transport device 61 to arrive at the substrate loading / unloading position simultaneously with or before the completion of the movement of the lower chuck 231 (step S405), that is, simultaneously with or before the lower chuck 231 returns to the substrate transfer position. This makes it possible to eliminate the waiting time from the completion of the movement of the lower chuck 231 to the start of loading, etc. of the upper wafer W1, thereby further improving the throughput of the substrate processing apparatus 1.

[0139] The control device 90 transmits a preparation command to the transfer device 61 after a set time has elapsed since the lower chuck 231 started to move (step S404), and causes the transfer device 61 to start moving toward the substrate loading / unloading position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S408) to the start of loading the upper wafer W1, etc. This makes it possible to improve the operating rate of the transfer device 61. In addition, it is possible to suppress temperature changes in the upper wafer W1 and the lower wafer W2.

[0140] The control device 90 may transmit a preparation command to the transfer device 61 using at least one of the following as a trigger: the start of the pushing down of the upper wafer W1 by the pushing unit 250 (step S201), the detection of displacement by the displacement detection unit 220 (step S302), and the start of the movement of the lower chuck 231 (step S404). The control device may transmit a preparation command to the transfer device 61 using two or more selected from steps S201, S302, and S404 as triggers. The number and types of triggers are not particularly limited, but are set in advance and stored in the storage medium 92.

[0141] The control device 90 preferably transmits a preparation command to the transfer device 61, triggered at least by detection of the displacement by the displacement detection unit 220 (step S302). The displacement detection unit 220 can monitor the progress of bonding of the upper wafer W1 and the lower wafer W2. The control device 90 can transmit the preparation command to the transfer device 61 at a timing according to the progress of bonding.

[0142] If the preset displacement detector 220 does not detect a displacement within a preset time from when the pushing unit 250 starts to push down the upper wafer W1 (step S201), the controller 90 determines that a problem has occurred in the progress of bonding and prohibits the transmission of a preparation command. After that, the controller 90 may notify an alarm to a user of the substrate processing apparatus 1.

[0143] Furthermore, when neither the displacement detection unit 220 in the direction with the fastest travel speed nor the displacement detection unit 220 in the direction with the slowest travel speed detects a displacement, the control device 90 determines that a problem has occurred in the progress of bonding, and prohibits the transmission of a preparation command. After that, the control device 90 may notify an alarm to a user of the substrate processing apparatus 1.

[0144] The control device 90 may resume transmission of the preparation command when it has confirmed by another sensor or the like that there is no impediment to the movement of the transport device 61.

[0145] Although the embodiments of the substrate processing apparatus and the substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. Naturally, these also fall within the technical scope of the present disclosure. [Explanation of symbols]

[0146] 1. Substrate Processing Equipment 41 Joining equipment 61 Transport Equipment 90 Control device 230 Upper chuck (first holding part) 231 Lower chuck (second holding part) 250 Pushing part 290 Moving mechanism W1 Upper wafer (first substrate) W2 Lower wafer (second substrate) T Polymer Substrate

Claims

1. a bonding device that bonds the first substrate and the second substrate to produce a laminated substrate; a transport device configured to transport the first substrate and the second substrate into the bonding device and to transport the laminated substrate out of the bonding device; A control device for controlling the joining device and the conveying device, the bonding device includes a first holding unit that holds the first substrate from above, a second holding unit that holds the second substrate from below, and a displacement detection unit that detects a downward displacement of the first substrate relative to the first holding unit at a point away from a center of the first substrate, the control device transmits, to the transport device, a preparation command to cause the transport device to start moving toward a substrate loading / unloading position for the bonding device, using the detection of the displacement by the displacement detection unit as a trigger; a plurality of the displacement detection units are provided, and detect the displacement at a plurality of points that are different distances from the center of the first substrate; The control device determines a progress speed of bonding of the first substrate and the second substrate using a plurality of the displacement detection units, or determines whether bonding of the first substrate and the second substrate has been successful.

2. a bonding speed of the first substrate and the second substrate is anisotropic; The substrate processing apparatus according to claim 1 , wherein the displacement detection units are provided in both a direction in which the travel speed is fastest and a direction in which the travel speed is slowest.

3. The substrate processing apparatus according to claim 1 , wherein the control device starts moving the transport device toward the substrate loading / unloading position after a set time has elapsed since the displacement detection unit detected the displacement at one or more points.

4. 4. The substrate processing apparatus according to claim 1, wherein the displacement detection unit measures a distance between the first holding unit and the first substrate.

5. The first holding unit includes a nozzle that sucks or discharges a gas, The substrate processing apparatus according to claim 4 , wherein the displacement detection unit detects a flow rate of gas through the nozzle and measures a distance between the first holding unit and the first substrate.

6. The substrate processing apparatus according to claim 4 , wherein the displacement detection unit measures the distance between the first holder and the first substrate by ultrasonic waves, light, or an image.

7. The displacement detection unit receiving light reflected from the first substrate and measuring the distance between the first holder and the first substrate based on the amount of light received; The substrate processing apparatus according to claim 4 , further comprising: a detecting unit configured to detect a distance between the first holding unit and the first substrate by detecting an electrostatic capacitance between the displacement detecting unit and the first substrate.

8. 4. The substrate processing apparatus according to claim 1, wherein the displacement detection unit detects the separation of the first substrate from the first holding unit.

9. 3. The substrate processing apparatus according to claim 2, wherein the control device prohibits transmission of the preparation command when the displacement is not detected by both the displacement detection unit in the direction of the fastest travel speed and the displacement detection unit in the direction of the slowest travel speed.

10. 10. A substrate processing method, comprising bonding the first substrate and the second substrate using the substrate processing apparatus according to claim 1.

Images