Showerhead Thermal Management Using Gas Cooling

Abstract

The temperature-controlled showerhead assembly includes a stem with a cooling gas passage and at least one process gas delivery passage, and a backplate thermally coupled to the stem. The showerhead also includes a faceplate attached to the backplate and a convective heat transfer element (CHTE) thermally coupled to the backplate. The CHTE includes a sealing cup that isolates the CHTE heat transfer structure from the process environment. The CHTE includes an internal plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages, and an outlet passage for removing a flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages. The received flow of cooling gas is thermally coupled to a surface of the backplate.

Description

[Technical field]

[0001] [Priority claim] This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 010,976, filed April 16, 2020, which is incorporated by reference in its entirety herein.

[0002] The subject matter disclosed herein generally relates to systems, methods, apparatus, and machine-readable media storing computer programs for thermal management during semiconductor device manufacturing, including thermal management of a showerhead (or other component, such as a pedestal) using clean dry air (CDA) (or other cooling gas) in association with a heat exchanger. [Background technology]

[0003] Semiconductor device processing equipment is used to process semiconductor substrates by techniques such as etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), pulsed deposited layer (PDL), plasma pulsed deposited layer (PEPDL), and resist removal. A semiconductor device (e.g., a substrate) may be placed on a substrate support, such as a pedestal or electrostatic chuck (ESC), in a processing chamber of the semiconductor device processing equipment. During processing, a gas mixture is introduced into the processing chamber through a showerhead, and a plasma may be used to promote chemical reactions in the processing chamber.

[0004] In semiconductor device processing equipment, such as CVD-based deposition chambers, the pedestal may be heated and the showerhead may be heated and cooled. However, during some stages of the CVD-based process (e.g., during deposition), it may be necessary to remove heat from the showerhead, while during other stages of the CVD-based process (e.g., during conditioning), it is not necessary to remove heat. Conventional showerhead cooling techniques include liquid cooling, which has several drawbacks. For example, liquid cooling allows some modification of heat removal, but the depth of modification available is largely limited by the allowable temperature range of the coolant. The nature of this limitation varies from coolant to coolant. For water-based coolants, the limitation is first due to the low boiling point of water and second due to the corrosive nature of water. For fluorocarbon, siloxane, and silicate ester coolants, the limitation is the boiling point or decomposition temperature. Some hydrocarbon and liquid metal coolants allow deep modification, but are impractical for other reasons (flammability, toxicity, reactivity, corrosivity). Furthermore, fluorocarbon coolants (e.g., Galden) produce highly toxic products (e.g., hydrogen fluoride) during thermal decomposition, which poses safety issues. In this regard, improper temperature control of ashable hardmask (AHM) showerheads can result in temperature spikes during plasma deposition steps and overcooling during conditioning, leading to throughput loss, substrate defects, and showerhead degradation.

[0005] The background description provided herein is intended to generally present the context of the present disclosure. Please note that the information provided in this section is presented to provide those skilled in the art with some context for the subject matter disclosed below, and should not be considered prior art admitted by the applicant. More specifically, the inventors' work as described in this background section, and the described aspects that may not have been admitted as prior art at the time of filing, are not expressly or implicitly admitted as prior art to the present disclosure. Summary of the Invention

[0006] Methods, systems, and computer programs are presented for thermal management during semiconductor device manufacturing, including thermal management of a showerhead (or other component, such as a pedestal) using clean dry air (CDA) (or other cooling gas) in conjunction with a heat exchanger.

[0007] The temperature-controlled showerhead assembly includes a stem with a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end. The temperature-controlled showerhead assembly further includes a backplate structurally coupled to the stem at the second end and a faceplate thermally coupled to the stem and attached to the backplate, the faceplate and the backplate enclosing a plenum for distribution of process gas. The temperature-controlled showerhead assembly further includes a convective heat transfer element (CHTE) thermally coupled to the backplate. The CHTE has an internal plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet passage for removing a flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages. The received flow of cooling gas may be thermally coupled to a surface of the backplate.

[0008] Another general aspect includes a temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber. The temperature control system includes a semiconductor device processing chamber with a temperature controlled showerhead. The showerhead includes a stem with a plurality of cooling gas passages and at least one process gas delivery passage. The at least one process gas delivery passage enters the stem at a first end and exits the stem at a second end opposite the first end. The showerhead includes a backplate structurally coupled to the stem at the second end and a faceplate thermally coupled to the stem and attached to the backplate. The faceplate and the backplate define a plenum therebetween. The showerhead further includes at least one temperature sensor thermally coupled to the backplate and configured to measure a temperature of at least one surface region of the backplate. The showerhead further includes a convective heat transfer element (CHTE) thermally coupled to the stem and the backplate. The CHTE includes an interior plenum including an inlet path for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet path for removing a flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages. The received flow of cooling gas may be thermally coupled to a surface of the backplate. The temperature control system further includes a controller coupled to the plurality of cooling gas passages and at least one temperature sensor of the showerhead. The controller is configured to set a flow rate of the flow of cooling gas through the inlet path of the CHTE based on the measured temperature.

[0009] Another general aspect includes a temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber. The system includes a semiconductor device processing chamber with a temperature controlled showerhead. The showerhead includes a stem with a plurality of cooling gas passages and at least one process gas delivery passage. The at least one process gas delivery passage enters the stem at a first end and exits the stem at a second end opposite the first end. The showerhead further includes a backplate structurally coupled to the stem at the second end and a faceplate thermally attached to the stem and attached to the backplate. The faceplate and the backplate define a plenum therebetween, the plenum receiving process gas through the at least one process gas delivery passage. The showerhead further includes a plurality of temperature sensors thermally coupled to the backplate and configured to measure a plurality of temperatures of corresponding plurality of heated zones of the backplate. The showerhead further includes a convective heat transfer element (CHTE) thermally coupled to the stem and the backplate. The CHTE includes a plurality of inlet paths configured to receive a flow of cooling gas through a first subset of the plurality of cooling gas passages, and a plurality of outlet paths for removing the flow of cooling gas from the CHTE through a second subset of the plurality of cooling gas passages. The received flow of cooling gas for each of the plurality of inlet paths may be thermally coupled to a corresponding heating zone of the plurality of heating zones of the backplate. The temperature control system further includes a controller coupled to the plurality of cooling gas passages and the plurality of temperature sensors. The controller is configured to set a flow rate for each flow of cooling gas through the plurality of inlet paths of the CHTE based on the plurality of measured temperatures. The temperature control system further includes a cooling system coupled to at least the second subset of the plurality of cooling gas passages and configured to cool the flow of cooling gas removed from the CHTE.

[0010] An additional general aspect includes a method for regulating a showerhead temperature using gas cooling. The method includes providing a showerhead including a stem coupled to a backplate, the stem including a plurality of cooling gas passages and a convective heat transfer element (CHTE) thermally coupled to the backplate. The CHTE includes an inlet path coupled to at least a first cooling gas passage of the plurality of cooling gas passages and an outlet path coupled to at least a second cooling gas passage of the plurality of cooling gas passages. The method further includes measuring a temperature of at least one surface region of the backplate using at least one temperature sensor thermally coupled to the backplate. The method further includes causing the inlet path to receive a flow of cooling gas through at least the first cooling gas passage of the plurality of cooling gas passages. The method further includes setting a flow rate of the flow of cooling gas through the inlet path of the CHTE based on the measured temperature. [Brief description of the drawings]

[0011] The various views of the accompanying drawings illustrate only exemplary embodiments of the present disclosure and are not to be considered as limiting the scope of the present disclosure.

[0012] [Figure 1] FIG. 1 illustrates a vacuum chamber, such as a deposition chamber for manufacturing semiconductor devices using deposition techniques, and a showerhead having a CHTE, in accordance with some illustrative embodiments.

[0013] [Diagram 2] FIG. 2 illustrates a temperature-controlled showerhead using a CHTE that implements the gas cooling techniques discussed herein, according to some embodiments.

[0014] [Diagram 3] FIG. 3 is a schematic diagram of a CHTE implementing the gas cooling techniques discussed herein, according to some embodiments.

[0015] [Figure 4]FIG. 4 is a cross-sectional view of a temperature-controlled showerhead using a CHTE implementing the gas cooling techniques discussed herein, according to some embodiments.

[0016] [Diagram 5] FIG. 5 is another schematic diagram of a temperature-controlled showerhead using a CHTE implementing the gas cooling techniques discussed herein, according to some embodiments.

[0017] [Figure 6] FIG. 6 is a schematic diagram illustrating a cross-sectional view of the inlet and outlet paths of a CHTE implementing the gas-based cooling techniques discussed herein, according to some embodiments.

[0018] [Figure 7] FIG. 7 is a schematic diagram illustrating a cross-sectional view of the inlet and outlet paths of a CHTE implementing the gas-based cooling techniques discussed herein, according to some embodiments.

[0019] [Figure 8] FIG. 8 is another schematic diagram showing a cross-sectional view of the inlet and outlet paths of a CHTE implementing the gas-based cooling techniques discussed herein, where the inlet path includes a flow impingement device, according to some embodiments.

[0020] [Figure 9A] FIG. 9A is a schematic diagram of a top view of a temperature-controlled showerhead using a CHTE implementing a gas-based cooling technique associated with multiple inlet and outlet cooling gas passages, according to some embodiments.

[0021] [Figure 9B] FIG. 9B illustrates different configurations of heating zones that can be used with the temperature-controlled showerhead of FIG. 9A, according to some embodiments. [Figure 9C] FIG. 9C illustrates different configurations of heating zones that can be used with the temperature-controlled showerhead of FIG. 9A, according to some embodiments.

[0022] [Figure 10A] FIG. 10A illustrates different configurations of inlet and outlet cooling gas passages in the stem of a temperature controlled showerhead according to some embodiments. [Figure 10B] FIG. 10B illustrates different configurations of inlet and outlet cooling gas passages in the stem of a temperature controlled showerhead according to some embodiments.

[0023] [Figure 11] FIG. 11 illustrates a system for showerhead temperature control during semiconductor device manufacturing according to some embodiments.

[0024] [Figure 12] FIG. 12 is a block diagram of a controller that can be used to control the flow rate of cooling gas in the system of FIG. 11, according to some embodiments.

[0025] [Figure 13] FIG. 13 is a schematic diagram showing a cross-sectional view of the inlet and outlet paths of a CHTE implementing the gas cooling techniques discussed herein, in which the inlet path includes multiple nozzles as flow impingement devices that form different heating zones, in accordance with some embodiments.

[0026] [Figure 14A] FIG. 14A is a graph showing the heat flux incident on a face of a showerhead according to some embodiments.

[0027] [Figure 14B] FIG. 14B illustrates an array of jet nozzles with increased spatial frequency of nozzles in an annular region extending to an intermediate radius to enhance cooling effectiveness in the region of increased heat flux shown in FIG. 14A, in accordance with some embodiments.

[0028] [Figure 15]FIG. 15 is a flow chart of a method for controlling etch rate and plasma uniformity using magnetic fields in semiconductor manufacturing equipment, according to some example embodiments.

[0029] [Figure 16] FIG. 16 is a block diagram illustrating an example of a machine 1600 upon which one or more exemplary method embodiments may be implemented or upon which one or more exemplary embodiments may be controlled. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The following description includes systems, methods, techniques, instruction sequences, and computer program products (e.g., stored on a machine-readable medium) that embody exemplary embodiments of the present disclosure. In the following description, for illustrative purposes, some specific details are set forth to provide a thorough understanding of exemplary embodiments directed to thermal management during semiconductor device manufacturing, including thermal management of a showerhead (or other component, such as a pedestal) using clean dry air (CDA) (or other cooling gas) in conjunction with a heat exchanger. However, it will be apparent to one skilled in the art that the present embodiments may be practiced without these specific details.

[0031] A portion of the disclosure of this patent document contains material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all copyrights whatsoever. The following notice applies to any data set forth below and in any drawings that form a part of this specification. Copyright Lam Research Corporation, 2020, All Rights Reserved.

[0032] To maximize heat removal by cooling gas (e.g., gas such as CDA) from high-temperature components (e.g., showerheads) used in the manufacture of semiconductor devices, convective heat transfer elements (CHTEs) may be used, and the geometry of the CHTE may be optimized to provide a contact area for heat conduction (e.g., heat flow from the high-temperature components to one or more elements of the CHTE) and to provide a surface area for heat convection by gas (e.g., heat flow from the CHTE elements to the gas). CHTEs using CDA may provide both additional cooling capacity and rapid response. In some embodiments, additive manufacturing (AM) may be used to manufacture optimized, cost-effective CHTEs. In this regard, the CHTE is physically isolated from the process gas by a machined sealing cup. This isolation eliminates the limitations of current AM technology for the requirements of the semiconductor industry, such as compatibility of AM powders with industrial chemicals and insufficient surface quality for ultra-high vacuum (UHV) sealing and contamination prevention. Using AM to manufacture the CHTE (but not the sealing cup) allows for a high degree of tuning and optimization of performance and cost. New generative design tools take this optimization a step further.

[0033] In some embodiments, the CHTE of the temperature-controlled showerhead may include one or more inlet and outlet paths coupled to a plurality of cooling gas passages through the showerhead stem. The temperature-controlled showerhead may further include one or more temperature sensors (e.g., in the backplate or frontplate of the showerhead) configured to measure (e.g., periodically) a surface temperature associated with one or more heated zones of the showerhead. A mass flow controller (MFC) is configured to control the flow rate at the individual inlet and outlet paths of the CHTE based on the measured surface temperature to individually control the cooling of each of the one or more heated zones. In this regard, the disclosed techniques can be used to achieve thermal correction by inflow and throttling of cooling gas (e.g., gas such as CDA) with an optimally designed heat transfer structure of the CHTE for gas cooling of components in a semiconductor device manufacturing environment, eliminating the risks and drawbacks associated with the use of liquid coolants such as water and fluorocarbon-based coolants.

[0034] The disclosed CHTE includes a sealing cup that isolates the CHTE heat transfer structure from the process environment (e.g., from the process gases used in the deposition chamber), providing complete gas-tight separation between the cooling gas (e.g., CDA) and the process environment, and protection of the CHTE heat transfer structure from the deposition and process gases. In some embodiments, the disclosed temperature-controlled showerheads may be 3D printed (AM'd) and the heat transfer structure of the CHTE incorporated therein.

[0035] Various techniques and options for configuring thermal management of a showerhead (or other components used in semiconductor device manufacturing) using a cooling gas (such as CDA) are illustrated in relation to FIGS. 1-16.

[0036] 1 shows a vacuum chamber 100, such as a deposition chamber for manufacturing a semiconductor device (e.g., a substrate) using a deposition technique, and a showerhead with a CHTE, according to some exemplary embodiments. Excitation of an electric field between two electrodes is one way to obtain a radio frequency (RF) gas discharge in the vacuum chamber. When an oscillating voltage is applied between the electrodes, the resulting discharge is called a CCP discharge.

[0037] The plasma 102 may be generated utilizing a stable feedstock gas to obtain a variety of chemically reactive by-products generated by dissociation of various molecules caused by electron-neutral collisions. The chemical aspects of deposition are based on a capacitive discharge introduced into a process gas from a process gas source 122, resulting in the generation of the plasma 102, which changes the gas molecules and generates reactive species of new compounds that are deposited on the substrate. The chemical aspects of etching include the reaction of neutral gas molecules and their dissociated by-products with molecules on the surface to be etched, as well as the generation of volatile molecules, which can be pumped away. When the plasma is generated, positive ions are accelerated from the plasma across a space charge sheath that separates the plasma from the chamber walls, and strike the wafer surface with sufficient energy to remove material from the wafer surface or densify a deposited coating. This is known as ion bombardment or ion sputtering. However, some industrial plasmas do not generate ions with enough energy to efficiently etch or densify a surface by purely physical means.

[0038] A controller 116 manages the operation of the vacuum chamber 100 by controlling various elements within the chamber, such as an RF generator 118, a gas source 122, and a gas pump 120. In one embodiment, fluorocarbon gases such as CF4 and C4F8 are used in the dielectric etch process due to their anisotropic and selective etching properties, although the principles described herein can be applied to other plasma generating gases. Fluorocarbon gases are readily dissociated into chemically reactive by-products, including smaller molecular and atomic radicals. These chemically reactive by-products etch away the dielectric material.

[0039] The vacuum chamber 100 illustrates a processing chamber having an upper electrode 104 and a lower electrode 108 as part of a pedestal 132. The upper electrode 104 may be grounded or coupled to an RF generator (not shown), and the lower electrode 108 is coupled to the RF generator 118 via a matching network 114 coupled to the pedestal 132. The RF generator 118 provides RF power at one or more (e.g., two or three) different RF frequencies. At least one of the three RF frequencies may be turned on or off according to the desired configuration of the vacuum chamber 100 for a particular operation. In the embodiment shown in FIG. 1, the RF generator 118 is configured to provide frequencies of, for example, 2 MHz, 27 MHz, and 60 MHz, although other frequencies are possible.

[0040] The vacuum chamber 100 includes a gas showerhead 105 as part of the upper electrode 104 for introducing process gases provided by a gas source 122 into the vacuum chamber 100, and a perforated confinement ring 112 that allows gas to be pumped out of the vacuum chamber 100 by a gas pump 120. In some exemplary embodiments, the gas pump 120 is a turbomolecular pump, although other types of gas pumps may be utilized.

[0041] When the substrate 106 is present in the vacuum chamber 100 and supported by the pedestal 132, a silicon focus ring 110 is positioned next to the substrate 106 and a uniform RF field is present at the bottom of the plasma 102 to uniformly etch the surface of the substrate 106. The pedestal 132 typically includes a chuck and lift pins (not shown in FIG. 1 ) for raising and lowering the substrate 106 during and between deposition and / or plasma processing reactions. The chuck may be an electrostatic chuck, a mechanical chuck, a vacuum chuck, or various other types of chucks available for use in the industry. The embodiment of FIG. 1 illustrates a triode reactor configuration in which the upper electrode 104 is surrounded by a symmetrical RF ground electrode 124. The insulator 126 is a dielectric that insulates the ground electrode 124 from the upper electrode 104. Other implementations of the vacuum chamber 100 are possible without changing the scope of the disclosed embodiments.

[0042] The substrate 106 may be, for example, a wafer (e.g., having a diameter of 100 mm, 150 mm, 200 mm, 300 mm, 450 mm, or larger). death, For example, elemental semiconductor materials (e.g., silicon (Si) or germanium (Ge)) or compound semiconductor materials (e.g., silicon germanium (SiGe) or gallium arsenide (GaAs)) (having Additionally, other substrates include dielectric materials, such as quartz and sapphire, upon which semiconductor materials may be applied.

[0043] Each frequency generated by the RF generator 118 may be selected for a particular purpose in the semiconductor device manufacturing process. In the example of FIG. 1, RF power is provided at 2 MHz, 27 MHz, and 60 MHz, with the 2 MHz RF power providing ion energy control and the 27 MHz and 60 MHz power providing control of plasma density and chemical dissociation patterns. This configuration, in which each RF power may be turned on or off, enables certain processes that use ultra-low ion energy on the substrate or wafer, and certain processes that require low ion energy (e.g., below 700 or 200 eV) (e.g., soft etching for low-k materials, etc.).

[0044] In another embodiment, 60 MHz RF power is used at the upper electrode 104 to obtain very low energy and very high density. This configuration allows for high density plasma chamber cleaning while minimizing sputtering on the electrostatic chuck (ESC) surface when the substrate 106 is not in the vacuum chamber 100. When the substrate 106 is not present, the ESC surface is exposed and ion energy on this surface should be avoided. For this reason, the lower 2 MHz and 27 MHz power supplies can be turned off during cleaning.

[0045] In some embodiments, the vacuum chamber 100 includes at least one process gas delivery passage 134 (through stem 107) for delivering process gases used in CVD or etching through the showerhead 105. The showerhead 105 may include a CHTE 130 that includes a heat transfer structure and is configured to perform the functions discussed herein. In some embodiments, a controller (e.g., a mass flow controller or other controller circuitry) 136 may be coupled to one or more temperature sensors in the showerhead 105 and may control the flow of cooling gas (e.g., cooling gas such as CDA from a cooling gas source 140) through a valve 138 and a number of cooling gas passages (e.g., inlet passage 142 and outlet passage 144 used to enable circulation of cooling gas in the CHTE 130) through the showerhead stem 107. Various configurations of the CHTE 130 and the cooling gas passages 142 and 144 are discussed herein in connection with FIGS. 2-13.

[0046] 2 shows a temperature controlled showerhead 200 using a CHTE implementing the gas cooling techniques discussed herein, according to some embodiments. With reference to FIG. 2, the showerhead 200 can include a stem 202, a faceplate 206, and a backplate 204. The stem 202 can include at least one process gas delivery passage 210 for delivering process gas 223 into a process gas plenum 227 located above a pedestal top surface 208.

[0047] In some embodiments, the showerhead 200 includes a CHTE 220 configured to perform one or more of the showerhead cooling functions discussed herein. The showerhead 200 further includes a plurality of inlet cooling gas passages 212 and a plurality of outlet cooling gas passages 214 configured to deliver and remove cooling gas for thermal control of the showerhead 200 using inlet / outlet paths in the CHTE 220, respectively.

[0048] In an exemplary embodiment, cooling gas (e.g., CDA) is delivered to the CHTE 220 through an inlet cooling gas passage 216 of the plurality of inlet cooling gas passages 212. Cooling gas 224 may enter the CHTE 220 through a first opening 217 (in the stem 202) associated with an inlet passage and may exit the CHTE 220 through a second opening 218 (in the stem 202) associated with an outlet passage. Various configurations of the inlet and outlet paths of the CHTE 220 are shown in more detail in Figures 3, 4, 6, 7, 8, and 13.

[0049] 2 shows only two openings in stem 202 corresponding to the delivery and removal of cooling gas within CHTE 220, the disclosure is not limited in this respect and multiple inlet cooling gas passages 212 and multiple outlet cooling gas passages 214 in stem 202 can have corresponding openings located in stem 202 (coupled to corresponding inlet and outlet pathways in CHTE 220). In some embodiments, one or more of the multiple inlet pathways coupled to inlet cooling gas passages 212 can be proximate to surface region 226 of backplate 204 (i.e., cooling gas such as CDA can be passed over). In this regard, by adjusting the flow rate of cooling gas through the inlet pathways in CHTE 220, the cooling of surface region 226 of backplate 204 (which can be the primary heat transfer area of ​​showerhead 200) can be modified and controlled (e.g., as shown in more detail in FIG. 11 ) and the showerhead heat dissipation Q from faceplate 206 can be increased to 2 kW or more. SH This may result in:

[0050] In some embodiments, the CHTE 220 can include a sealing cup 222 that can cover the inlet and outlet paths formed by various heat transfer elements inside the CHTE 220 to isolate the CHTE 220 from the process gases in the chamber. To improve isolation from the process gases and reaction environment in the chamber, the sealing cup 222 is welded to the stem 202 and backplate 204 using a circular weld 225. In some embodiments, the CHTE 220 can be manufactured (e.g., 3D printed) as part of the stem 202 and includes the sealing cup 222.

[0051] FIG. 3 shows a schematic diagram of a CHTE 300 implementing the gas cooling techniques discussed herein, according to some embodiments. With reference to FIG. 3, the CHTE 300 includes an arrangement of fins 302 (parallel to the exit plane of the showerhead 200, such as the plane of the faceplate 206) and fins 304 (perpendicular to the exit plane of the showerhead 200) that form a plurality of channels 310B. As shown in FIG. 3, low temperature cooling gas 306 (e.g., referred to as CDA) delivered from the stem through an input cooling gas passage (e.g., through the first opening 217) passes through an inlet path 310A that is located close to the showerhead backplate 204 (which is the primary heat transfer area). High temperature cooling gas 308 exits the CHTE 300 through an outlet path 310C (e.g., through the second opening 218).

[0052] Although CHTE 300 is shown in FIG. 3 using a particular embodiment of a heat transfer matrix having a particular arrangement of heat transfer structures, the disclosure is not limited in this respect and other arrangements of heat transfer structures within the CHTE (e.g., as shown in FIGS. 6, 7, 8, and 13) may be used as well.

[0053] 4 is a cross-sectional view of a temperature-controlled showerhead 400 using a CHTE 404 that implements the gas cooling techniques discussed herein, in accordance with some embodiments. With reference to FIG. 4, the showerhead 400 includes a stem 402, a backplate 406, a faceplate 408, and a CHTE 404 at least partially disposed on the backplate 406.

[0054] The CHTE 404 is surrounded by a sealing cup 412, which may be machined during the manufacturing process of the showerhead 400. As shown in FIG. 4, the stem 402 includes a plurality of inlet cooling gas passages 418 (a corresponding plurality of outlet cooling gas passages are coupled to the outlet pathways of the CHTE 404, but are not visible in FIG. 4).

[0055] The CHTE 404 includes multiple mechanically patterned plates within a plenum 415 forming at least one inlet passage 414 for receiving cooling gas through passages 418 and at least one outlet passage 416 for removing the hot cooling gas after heat exchange with the backplate surface.

[0056] In some aspects, the backplate 406 can include one or more temperature sensors, such as temperature sensor 410. Temperature sensor 410 can be configured to periodically sense and report the temperature of the backplate 406 to a controller (e.g., as shown in connection with the system of FIG. 11 ). In an exemplary embodiment, the controller can be configured to modify the flow rate of cooling gas (e.g., pressure of the CDA) supplied through the inlet cooling gas passage 418 based on the temperature obtained by temperature sensor 410. FIG. 4 illustrates a system in which temperature sensor 410 is located within the backplate 406. Things to do Although shown, the disclosure is not limited in this respect and the temperature sensor 410 (or multiple temperature sensors) may be located in other portions of the showerhead 400 (e.g., the temperature sensor may be disposed in the faceplate 408 or other portions of the showerhead).

[0057] In an exemplary embodiment, various dimensions of the heat transfer structures of the CHTE can be optimized (e.g., as shown in FIG. 5) based on desired heat dissipation, manufacturing costs, etc. FIG. 5 is another schematic diagram of a temperature-controlled showerhead 500 using a CHTE implementing the gas cooling techniques discussed herein, according to some embodiments. With reference to FIG. 5, the showerhead 500 includes a stem 502, a backplate 504, a faceplate 506, and a CHTE 508 mounted on the backplate 504. In an exemplary embodiment, a diameter 510 and a height 512 of the CHTE 508 can be configured based on heat dissipation requirements, manufacturing costs, and other considerations.

[0058] 6 is a schematic diagram illustrating a cross-sectional view of inlet and outlet passages of a CHTE 600 implementing the gas-based cooling techniques discussed herein, according to some embodiments. With reference to FIG. 6, the CHTE 600 includes a heat transfer structure, such as a plurality of stacked machined plates, forming a plurality of inlet passages 602 and a plurality of outlet passages 604. As shown in FIG. 6, the dimensions (e.g., heights L1, L2, and L3) of the individual inlet and outlet passages 602, 604 can be configured based on heat dissipation requirements, manufacturing costs, and other considerations.

[0059] 7 is a schematic diagram illustrating a cross-sectional view of the inlet and outlet paths of a CHTE 700 implementing the gas-based cooling techniques discussed herein, according to some embodiments. With reference to FIG. 7, the CHTE 700 includes a heat transfer structure including at least one thermally conductive plate with an increased surface area that forms at least one inlet path 702 and at least one outlet path 704. As shown in FIG. 7, when cooling gas passes through the inlet path 702, which is in direct contact with the backplate of the showerhead, heat dissipation from the backplate occurs as heat is absorbed by the cooling gas.

[0060] FIG. 8 is another schematic diagram showing a cross-sectional view of the inlet and outlet paths of a CHTE 800 implementing the gas-based cooling techniques discussed herein, where the inlet path includes a flow impingement device, according to some embodiments. With reference to FIG. 8, the CHTE 800 includes a heat transfer structure, such as at least one machined plate, that forms at least one inlet path 804 and at least one outlet path 806. As shown in FIG. 8, when cooling gas passes through the inlet path 804, which is in direct contact with the backplate of the showerhead, heat dissipation from the backplate occurs as heat is absorbed by the cooling gas. In an exemplary embodiment, the inlet path 804 may include one or more flow impingement devices to further increase the surface area within the inlet path 804 and improve (e.g., increase) heat absorption by the cooling gas. In an exemplary embodiment, the flow impingement device may include a vertical barrier 802 that may be orthogonal to the backplate surface to which the CHTE 800 is attached. In other embodiments, such as shown in FIG. 13, the flow impingement device may include nozzles having different widths or other different nozzle geometry characteristics. Other types of flow impingement devices may be used to restrict or enhance the flow of cooling gas within the CHTE.

[0061] FIG. 9A is a schematic diagram of a top view 900A of a temperature-controlled showerhead 904 using a CHTE 906 implementing a gas cooling technique associated with multiple inlet and outlet cooling gas passages, according to some embodiments. Referring to FIG. 9A, the top view 900A shows multiple inlet cooling gas passages (e.g., 916, 918, 920, and 922) and multiple outlet cooling gas passages (e.g., 924, 926, 928, and 930) through the stem 902. In an exemplary embodiment, the CHTE 906 is attached to the backplate of the showerhead 904 and configured to include multiple inlet and outlet paths to separately manage heat dissipation within multiple heating zones of the showerhead backplate. For example, as shown in FIG. 9A, the backplate of the showerhead 904 is divided into heating zones 908, 910, 912, and 914, and corresponding cooling gas passages are used to independently manage heat dissipation within each heating zone.

[0062] More specifically, an inlet cooling gas passage 916 may be used to deliver cooling gas (e.g., CDA or other cooling gas) into a portion of the CHTE 906 disposed above the heated zone 908, and an outlet cooling gas passage 924 is used to remove heated cooling gas associated with the heated zone 908. Similarly, an inlet cooling gas passage 918 may be used to deliver cooling gas into a portion of the CHTE 906 disposed above the heated zone 910, and an outlet cooling gas passage 926 is used to remove heated cooling gas associated with the heated zone 910. An inlet cooling gas passage 920 may be used to deliver cooling gas into a portion of the CHTE 906 disposed above the heated zone 912, and an outlet cooling gas passage 928 is used to remove heated cooling gas associated with the heated zone 912. An inlet cooling gas passage 922 may be used to deliver cooling gas into a portion of the CHTE 906 disposed above the heated zone 914, and an outlet cooling gas passage 930 is used to remove heated cooling gas associated with the heated zone 914.

[0063] In the exemplary embodiment, rather than the individual outlet cooling gas passages 924, 926, 928, and 930, a common outlet cooling gas passage 932 may be used.

[0064] Although Figure 9A shows four radial heating zones, the disclosure is not limited in this respect and other configurations of heating zones may be used, as shown in Figures 9B and 9C. Additionally, different configurations of inlet and outlet cooling gas passages through the stem are shown in connection with Figures 10A and 10B.

[0065] 9B and 9C show different configurations of heating zones that can be used with the temperature-controlled showerhead of FIG. 9A , according to some embodiments. With reference to FIG. 9B , a showerhead top view 900B shows that the backplate can be separated into multiple radial heating zones, including heating zones 940, 942, 944, 946, 948, 950, 952, and 954. With reference to FIG. 9C , a showerhead top view 900C shows that the backplate can be separated into multiple azimuthal heating zones, including heating zones 960, 962, and 964. In this regard, corresponding inlet and outlet cooling gas passages can be configured in the stem to configure and adjust the flow rate of cooling gas for each of the radial and azimuthal heating zones individually.

[0066] 10A and 10B show different configurations of inlet and outlet cooling gas passages in a stem of a temperature controlled showerhead, according to some embodiments. Referring to FIG. 10A, a showerhead top view 1000 shows a stem having at least one process gas delivery passage 1010 and a pair of inlet cooling gas passages 1002 and 1004 positioned opposite each other and equidistant from the at least one process gas delivery passage 1010. The showerhead top view 1000 further shows that the stem includes a pair of outlet cooling gas passages 1006 and 1008 positioned opposite each other and equidistant from the at least one process gas delivery passage 1010.

[0067] 10B, a showerhead top view 1020 shows multiple inlet cooling gas passages 1028, 1030, and 1032, and multiple outlet cooling gas passages 1022, 1024, and 1026 passing through a showerhead stem 1021. In an exemplary embodiment, the inlet and outlet cooling gas passages can be disposed along the periphery of the stem 1021, with the inlet and outlet passages alternating and equidistant from a central process gas delivery passage. In an exemplary embodiment, as shown in FIG. 10B, the stem 1021 can include isolation devices 1034, 1036, 1038, 1040, 1042, and 1044 disposed between the inlet and outlet cooling gas passages to improve thermal efficiency and reduce cross heat transfer between the inlet and outlet passages. Isolation devices 1034, 1036, 1038, 1040, 1042, and 1044 can include isolation membranes, isolation gaps, insulating materials, evacuated spaces, or other isolation means.

[0068] FIG. 11 illustrates a system 1100 for temperature control of a showerhead during semiconductor device fabrication, according to some embodiments. With reference to FIG. 11, the system 1100 can include a showerhead CHTE 1101 attached to a showerhead backplate 1102 that can be used in a semiconductor device processing chamber that includes a pedestal 1103 for holding a semiconductor device (e.g., a substrate). The CHTE 1101 includes heat transfer structures that form a plurality of heat exchangers, such as heat exchangers 1110, 1112, ..., 1114. Each of the heat exchangers can be configured for thermal management of a particular heated zone associated with the backplate 1102 (e.g., as shown in FIGS. 9A-9C). Additionally, each of the heat exchangers 1110, ..., 1114 can be configured with a corresponding inlet cooling gas passage 1132 and outlet cooling gas passage 1134.

[0069] In an exemplary embodiment, the inlet cooling gas passages 1132 may each be coupled to a corresponding mass flow controller (MFC) 1118, 1120, ..., 1122 configured to receive cooling gas, such as CDAs 1124, 1126, ..., 1128, respectively, from a facility or dedicated compressor 1135.

[0070] In an exemplary embodiment, each of the outlet cooling gas passages 1134 may be coupled to a heat exchanger 1130 that may be configured to recover heat removed from the CHTE 1101 by the cooling gas released through the outlet cooling gas passages 1134. In some aspects, the heat exchanger 1130 may receive the cold gas 1131 and generate the hot gas 1133 using the recovered heat. In other aspects, the hot CDA received through the outlet cooling gas passages 1134 may be released to the atmosphere. Cooling the existing coolant improves safety and facilitates safe disposal (e.g., by venting to the atmosphere).

[0071] The system 1100 further includes a controller 1116 coupled to the MFCs and a number of temperature sensors. Figure 12 is a block diagram of the controller 1116 that can be used to control the flow rate of cooling gas in the system of Figure 11, according to some embodiments. The controller 1116 is coupled to a number of temperature sensors 1202 and a number of MFCs 1204, and the flow rate of each of the MFCs 1204 may be adjusted / regulated based on the temperature from a corresponding one of the number of temperature sensors 1202.

[0072] More specifically, with reference to FIG. 11, the controller 1116 may be configured to periodically obtain temperature readings from the temperature sensors 1104, 1106,..., 1108 in the showerhead backplate 1102. The temperature sensors 1104, 1106,..., 1108 may be disposed in corresponding heating zones associated with the heat exchangers 1110,..., 1114. During operation, the controller 1116 obtains temperature readings from the temperature sensors 1104, 1106,..., 1108 for each of the heating zones associated with the corresponding heat exchangers and adjusts the flow rate of cooling gas by the corresponding MFCs 1118, 1120,..., 1122. In this regard, the CHTE 1101 may be configured to individually modify heat dissipation for one or more of the configured heating zones.

[0073] 13 is a schematic diagram illustrating a cross-sectional view of an inlet and outlet path of a CHTE 1300 implementing the gas cooling techniques discussed herein, where the inlet path includes multiple nozzles as flow impingement devices forming different heating zones, according to some embodiments. With reference to FIG. 13, the CHTE 1300 includes a heat transfer structure, such as at least one thermally conductive plate with increased surface area, that forms at least one inlet path 1302 and at least one outlet path 1304. As shown in FIG. 13, the inlet path 1302 includes multiple nozzles 1306, 1308, 1310, 1312, 1314, 1316, and 1318 configured as flow impingement devices of the CHTE 1300.

[0074] In an exemplary embodiment, various nozzle characteristics (e.g., radius, nozzle wall slope, etc.) may be different such that different heat dissipation and cooling may be achieved in association with different heated zones, such as heated zones 1320, 1322, and 1324. The nozzle radius of nozzles 1306-1312 (associated with heated zone 1320) may be smaller than the nozzle radius of nozzles 1314-1316 (associated with heated zone 1322), which in turn is smaller than the nozzle radius of nozzle 1318 (associated with heated zone 1324). In this regard, the maximum heat dissipation is achieved in association with heated zone 1320 since nozzles 1306-1312 have the smallest radius.

[0075] FIG. 14A is a graph 1400A illustrating the heat flux incident on the face of a showerhead, according to some embodiments. As shown in FIG. 14A, the incident heat flux increases in the showerhead space defined between radius R1 and radius R2. FIG. 14B illustrates an array of jet nozzles in a showerhead 1400B with an increased spatial frequency of nozzles in an annular region 1402 extending to an intermediate radius to enhance the cooling effect in the region of increased heat flux shown in FIG. 14A, according to some embodiments. As shown in FIG. 14B, region 1402 (between radius R1 and radius R2) is associated with an increased heat flux density. As a result, the density of jet nozzles in the annular region 1402 of the showerhead 1400B is increased to counteract the effects of the increased heat flux. Other patterns of jet nozzle density may be used based on the incident heat flux associated with the showerhead.

[0076] 15 is a flow chart of a method 1500 for regulating a showerhead temperature using gas cooling in semiconductor manufacturing equipment, according to some illustrative embodiments. Method 1500 includes operations 1502, 1504, 1506, and 1508, which may be performed by control logic, such as controller 1116 of FIG. 11 managing mass flow controllers (MFCs) 1118,...,1122. Referring to FIG. 15, in operation 1502, a showerhead is provided that includes a stem coupled to a backplate (e.g., 1102). The stem includes a plurality of cooling gas passages (e.g., 1132 and 1134) that are connected to a backplate (e.g., 1102) through which a showerhead is provided. The showerhead includes a plurality of cooling gas passages (e.g., 1132 and 1134 ... The shower head includes: A convection heat transfer element (CHTE) thermally coupled to the stem and backplate (e.g., 1101 )of The CHTE includes an inlet path coupled to at least a first cooling gas passage of the plurality of cooling gas passages, and an outlet path coupled to at least a second cooling gas passage of the plurality of cooling gas passages. For example, the CHTE 1101 includes a plurality of heat exchangers 1110-1114, each heat exchanger including at least one inlet path for receiving cooling gas and at least one outlet path for removing heated cooling gas after heat exchange associated with a heated zone of the backplate 1102.

[0077] In operation 1504, a temperature of at least one surface region of the backplate is measured using at least one temperature sensor thermally coupled to the backplate. For example, the controller 1116 receives temperature measurements from temperature sensors 1104-1108, each associated with a heating zone corresponding to a heat exchanger 1110-1114 in the CHTE 1101.

[0078] In operation 1506, the controller causes the inlet pathway to receive a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages. For example, the controller 1116 causes the MFCs 1118-1122 to initiate a flow of cooling gas to the corresponding heat exchanger 1110-1114. In operation 1508, a flow rate of the flow of cooling gas through the inlet pathway of the CHTE may be set based on the measured temperature. For example, the controller 1116 may use the temperature measurements received from the temperature sensors 1104-1108 to adjust / regulate the flow rate of one or more of the MFCs 1118-1122 to individually manage and regulate the flow rate of cooling gas through the heat exchangers 1110-1114, allowing for individualized modification of cooling within the semiconductor device manufacturing system 1100.

[0079] FIG. 16 is a block diagram illustrating an example of a machine 1600 on which one or more exemplary method embodiments may be implemented or controlled. In alternative embodiments, the machine 1600 may operate as a standalone device or may be connected (e.g., networked) to other machines. In a network deployment, the machine 1600 may operate in the functions of a server machine, a client machine, or both, in a server-client network environment. In one example, the machine 1600 may function as a peer machine in a peer-to-peer (P2P) (or other distributed) network environment. Furthermore, although only a single machine 1600 is shown, the term "machine" shall also be construed to include any collection of machines individually or jointly executing a set (or sets) of instructions to perform any one or more of the methods described herein, such as via cloud computing, software as a service (SaaS), or other computer cluster configurations.

[0080] The examples described herein may include or operate by logic, some components, or mechanisms. A circuit configuration is a collection of circuits implemented in a tangible entity that includes hardware (e.g., simple circuits, gates, logic). Circuit configuration membership may be flexibly changed over time and there may be variability in the underlying hardware. A circuit configuration includes members that may perform a specified operation alone or in combination when operational. In one example, the hardware of a circuit configuration may be invariably designed (e.g., hardwired) to perform a specific operation. In one example, the hardware of a circuit configuration may include variably connected physical components (e.g., execution units, transistors, simple circuits) that include a computer-readable medium that is physically modified (e.g., magnetically, electrically, by movable arrangement of immutable mass particles) to encode instructions for a specific operation. In connecting the physical components, the underlying electrical properties of the hardware components are changed (e.g., from insulator to conductor or vice versa). The instructions can cause the embedded hardware (e.g., an execution unit or a loading mechanism) to create members of the circuitry as hardware through variable connections to perform some of the specific operations when in operation. Thus, the computer-readable medium is communicatively coupled to other components of the circuitry when the device is in operation. In some aspects, any one of the physical components may be used in multiple members of multiple circuitry. For example, during operation, an execution unit may be used in a first circuit of a first circuitry at one time and used again by a second circuit in the first circuitry at another time, or by a third circuit in the second circuitry.

[0081] The machine (e.g., computer system) 1600 may include a hardware processor 1602 (e.g., a central processing unit (CPU), a hardware processor core, a graphic processing unit (GPU), or any combination thereof), a main memory 1604, and a static memory 1606, some or all of which may communicate with each other via an interlink (e.g., a bus) 1608. The machine 1600 may further include a display device 1610, an alphanumeric input device 1612 (e.g., a keyboard), and a user interface (UI) navigation device 1614 (e.g., a mouse). In one example, the display device 1610, the alphanumeric input device 1612, and the UI navigation device 1614 may be touch screen displays. The machine 1600 may further include a mass storage device (e.g., a drive unit) 1616, a signal generation device 1618 (e.g., a speaker), a network interface device 1620, and one or more sensors 1621, such as a Global Positioning System (GPS) sensor, a compass, an accelerometer, or another sensor. The machine 1600 may include an output controller 1628, such as a serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC)) connection, to communicate with or control one or more peripheral devices (e.g., printer, card reader).

[0082] In an exemplary embodiment, the hardware processor 1602 may perform the functions of the controller 1116 or any control logic described herein above (eg, discussed in connection with at least FIG. 11).

[0083] The mass storage device 1616 may include a machine-readable medium 1622 on which is stored one or more sets of data structures or instructions 1624 (e.g., software) that embody or are utilized by any one or more of the techniques or functions described herein. The instructions 1624 may reside, completely or at least partially, within the main memory 1604, within the static memory 1606, or within the hardware processor 1602 during execution thereof by the machine 1600. In one example, one or any combination of the hardware processor 1602, the main memory 1604, the static memory 1606, or the mass storage device 1616 may constitute a machine-readable medium.

[0084] Although the machine-readable medium 1622 is depicted as a single medium, the term “machine-readable medium” may include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) configured to store one or more instructions 1624.

[0085] The term "machine-readable medium" may include any medium capable of storing, encoding, or carrying instructions 1624 for execution by the machine 1600 and causing the machine 1600 to perform any one or more of the techniques of this disclosure, or any medium capable of storing, encoding, or carrying data structures used by or associated with such instructions 1624. Non-limiting examples of machine-readable media may include solid-state memory and optical and magnetic media. In one example, a massive machine-readable medium includes a machine-readable medium 1622 having a plurality of particles having an unchanging (e.g., stationary) mass. Thus, a massive machine-readable medium is not a transitory propagating signal. Particular examples of massive machine-readable media may include non-volatile memory, such as semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM)) and flash memory devices; magnetic disks, such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

[0086] The instructions 1624 may further be transmitted or received over a communications network 1626 using a transmission medium via the network interface device 1620 .

[0087] The implementation of the aforementioned techniques may be accomplished by any number of specifications, configurations, or exemplary deployments of hardware and software. It should be understood that functional units or capabilities described herein may be referred to and labeled as components or modules to more specifically emphasize their implementation independence. Such components may be embodied by any number of software or hardware forms. For example, a component or module may be implemented as a hardware circuit including custom very large scale integrated (VLSI) circuits or gate arrays, off-the-shelf semiconductors, such as logic chips, transistors, or other discrete components. A component or module may be implemented in a programmable hardware device, such as a field programmable gate array, programmable array logic, programmable logic device, or the like. A component or module may be implemented as software for execution by various types of processors. An identified component or module of executable code may comprise, for example, one or more physical or logical blocks of computer instructions, which may be organized, for example, as an object, procedure, or function. Nonetheless, the executable code of an identified component or module need not be physically located together, but may comprise different instructions stored in different locations, which, when logically combined together, constitute the component or module and achieve a specified purpose for the component or module.

[0088] Indeed, an executable code component or module may be a single instruction or many instructions, distributed across several different code segments, among different programs, and across several memory devices or processing systems. In particular, some aspects of the described process (e.g., rewriting the code and analyzing the code) may be performed on a different processing system (e.g., a computer in a data center) than the system in which the code is deployed (e.g., a computer embedded in a sensor or robot). Similarly, operational data may be identified and illustrated in components or modules herein and may be embodied in any suitable form and organized in any suitable type of data structure. The operational data may be collected as a single data set or may be distributed across different locations, including different storage devices, and may exist, at least in part, only as electronic signals on a system or network. The components or modules may be passive or active, and include agents operable to perform a desired function.

[0089] Additional Notes and Examples

[0090] Example 1 is a temperature-controlled showerhead assembly comprising: a stem with a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate thermally coupled to the stem and attached to the backplate, the faceplate and the backplate defining a plenum therebetween; and a convective heat transfer element (CHTE) thermally coupled to the stem and the backplate, the CHTE having an internal plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet passage for removing a flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages, the received flow of cooling gas being thermally coupled to a surface of the backplate.

[0091] In Example 2, the subject matter of Example 1 includes subject matter where a flow of cooling gas is received through a first opening of the stem connected to a first cooling gas passage of the multiple cooling gas passages; and a flow of cooling gas is removed through a second opening of the stem connected to a second cooling gas passage of the multiple cooling gas passages.

[0092] In Example 3, the subject matter of Example 2 includes subject matter where the sealing cup structure is attached to the stem and backplate by a circular weld to form an airtight enclosure for the CHTE.

[0093] In example 4, the subject matter of example 3 includes the subject matter wherein the first opening and the second opening are located in a portion of the stem surrounded by the sealing cup.

[0094] In example 5, the subject matter of examples 1-4 includes subject matter where the CHTE comprises a plurality of stacked thermally conductive plates forming an inlet passage and an outlet passage.

[0095] In example 6, the subject matter of examples 1-5 includes subject matter where the CHTE comprises a plurality of fins forming a plurality of channels associated with the inlet and outlet pathways.

[0096] In example 7, the subject matter of examples 1-6 includes subject matter, wherein the plurality of cooling gas passages are configured to flow at least one of clean dry air (CDA); argon; helium; nitrogen; and hydrogen.

[0097] In example 8, the subject matter of examples 1-7 includes subject matter where an inlet passage of the CHTE is defined at least in part by a surface of the backplate.

[0098] In example 9, the subject matter of examples 1-8 includes subject matter where the inlet pathway is configured to receive a flow of cooling gas through a first subset of the plurality of cooling gas passages and the outlet pathway is configured to remove a flow of cooling gas through a second subset of the plurality of cooling gas passages.

[0099] In Example 10, the subject matter of Example 9 includes subject matter wherein the first subset and the second subset of the plurality of cooling gas passages are substantially parallel to the at least one process gas delivery passage in the stem.

[0100] In Example 11, the subject matter of Examples 9-10 includes subject matter where a first subset of the plurality of cooling gas passages is thermally isolated from a second subset of the plurality of cooling gas passages by a plurality of isolation membranes within the stem.

[0101] In example 12, the subject matter of examples 9-11 includes subject matter where a first subset of the plurality of cooling gas passages is thermally isolated from a second subset of the plurality of cooling gas passages by a plurality of isolation gaps within the stem.

[0102] Example 13 is a semiconductor device processing chamber. In1. A temperature control system for controlling a showerhead temperature, comprising: a stem having a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate thermally coupled to the stem and attached to the backplate, the faceplate and backplate defining a plenum therebetween; at least one temperature sensor thermally coupled to the backplate and configured to measure a temperature of at least one surface region of the backplate; and a backplate thermally coupled to the stem. and a temperature controlled showerhead comprising: a convective heat transfer element (CHTE) having an internal plenum including an inlet path for receiving a flow of cooling gas through at least a first cooling gas passage of a plurality of cooling gas passages and an outlet path for removing a flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages, the received flow of cooling gas being thermally coupled to a surface of a backplate; and a mass flow controller (MFC) coupled to the plurality of cooling gas passages and to at least one temperature sensor of the showerhead, the MFC configured to set a flow rate of the flow of cooling gas through the inlet path of the CHTE based on a measured temperature.

[0103] In example 14, the subject matter of example 13 includes subject matter wherein at least one temperature sensor is thermally coupled to the faceplate.

[0104] In example 15, the subject matter of examples 13-14 includes subject matter wherein at least one temperature sensor is thermally coupled to the stem.

[0105] In example 16, the subject matter of examples 13-15 includes subject matter where the MFC is configured to periodically obtain a measured temperature from at least one temperature sensor and dynamically adjust a flow rate of the cooling gas based on the measured temperature.

[0106] In Example 17, the subject matter of Examples 13-16 includes subject matter where the CHTE comprises a plurality of stacked thermally conductive plates forming an inlet passage and an outlet passage.

[0107] In Example 18, the subject matter of Examples 13-17 includes subject matter wherein the CHTE comprises a plurality of vertical and horizontal fins that form a plurality of channels associated with the inlet and outlet paths.

[0108] In Example 19, the subject matter of Examples 13-18 includes subject matter where the CHTE comprises a plurality of flow impingement devices forming an inlet passage.

[0109] In Example 20, the subject matter of Example 19 includes subject matter wherein the plurality of flow impingement devices comprises at least a first subset of nozzles and at least a second subset of nozzles forming an inlet passage.

[0110] In Example 21, the subject matter of Example 20 includes subject matter where the first nozzle subset is associated with a first nozzle width and the second nozzle subset is associated with a second nozzle width different from the first nozzle width.

[0111] In example 22, the subject matter of examples 19-21 includes subject matter where the plurality of flow impingement devices comprises a plurality of vertical barriers, the plurality of vertical barriers being orthogonal to a surface area of ​​the backplate.

[0112] Example 23 is a temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber, the system including: a stem having a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate thermally coupled to the stem and attached to the backplate, the faceplate and backplate defining a plenum therebetween, the plenum receiving process gas through the process gas delivery passages; a plurality of temperature sensors thermally coupled to the backplate and configured to measure a plurality of temperatures of corresponding a plurality of heated zones of the backplate; and a convective heat transfer element (CHTE) thermally coupled to the stem and the backplate, the plurality of cooling gas passages being connected to the stem; a convective heat transfer element (CHTE) having a plurality of inlet paths configured to receive a flow of cooling gas through a first subset of the plurality of cooling gas passages and a plurality of outlet paths for removing the flow of cooling gas from the CHTE through a second subset of the plurality of cooling gas passages, a received flow of cooling gas for each of the plurality of inlet paths being thermally coupled to a corresponding heated zone of a backplate; a mass flow controller (MFC) coupled to the plurality of cooling gas passages and a plurality of temperature sensors, the MFC configured to set a flow rate for each of the flows of cooling gas through the plurality of inlet paths of the CHTE based on a plurality of measured temperatures; and a cooling system coupled to at least the second subset of the plurality of cooling gas passages and configured to cool the flow of cooling gas removed from the CHTE.

[0113] In Example 24, the subject matter of Example 23 includes subject matter wherein the plurality of heating zones are configured as azimuthal heating zones relative to a center of the stem.

[0114] In Example 25, the subject matter of Examples 23-24 includes subject matter wherein the multiple heating zones are configured as radial heating zones about a center of the stem.

[0115] In Example 26, the subject matter of Examples 23-25 ​​includes subject matter wherein the MFC is configured to periodically obtain a plurality of measured temperatures from a plurality of temperature sensors; and dynamically adjust a flow rate for one or more of the cooling gas flows through a plurality of inlet paths of the CHTE based on the plurality of measured temperatures.

[0116] In Example 27, the subject matter of Examples 23-26 includes subject matter where the CHTE comprises a plurality of stacked thermally conductive plates forming a plurality of inlet passages and a plurality of outlet passages.

[0117] In Example 28, the subject matter of Examples 23-27 includes subject matter wherein the CHTE comprises a plurality of vertical and horizontal fins forming a plurality of channels associated with a plurality of inlet paths and a plurality of outlet paths.

[0118] In Example 29, the subject matter of Examples 23-28 includes subject matter where the CHTE comprises a plurality of flow impingement devices forming a plurality of inlet passages.

[0119] Example 30 is a method for regulating a showerhead temperature using gas cooling, comprising providing a showerhead including a stem coupled to a backplate, the stem having a plurality of cooling gas passages. Includes , The shower head is A convective heat transfer element (CHTE) thermally coupled to the stem and backplate )ofthe CHTE including an inlet path coupled to at least a first cooling gas passage of the plurality of cooling gas passages and an outlet path coupled to at least a second cooling gas passage of the plurality of cooling gas passages; measuring a temperature of at least one surface region of the backplate using at least one temperature sensor thermally coupled to the backplate; causing the inlet path to receive a flow of cooling gas that passes through at least the first cooling gas passage of the plurality of cooling gas passages; and setting a flow rate of the flow of cooling gas through the inlet path of the CHTE based on the measured temperature.

[0120] In example 31, the subject matter of example 30 is clean and dry air (CDA), the method further including providing a mass flow controller coupled to at least a first cooling gas passage of the plurality of cooling gas passages and a gas source configured to generate CDA.

[0121] Example 32 is at least one machine-readable medium including instructions that, when executed by a processing circuitry, cause the processing circuitry to perform operations to implement any of Examples 1-31.

[0122] Example 33 is an apparatus including means for implementing any one of Examples 1 to 31.

[0123] Example 34 is a system for implementing any one of Examples 1 to 31.

[0124] Example 35 is a method for implementing any of Examples 1 to 31.

[0125] Throughout this specification, multiple instances may implement components, operations, or structures described as a single instance. Although individual operations of one or more methods are illustrated and described as separate operations, one or more of the individual operations may be performed simultaneously, and the operations need not be performed in the order illustrated. Structures and functions presented as separate components with respect to example configurations may be implemented as composite structures or components. Similarly, structures and functions presented as a single component may be implemented as separate components. These and other variations, modifications, additions, and improvements fall within the scope of the subject matter herein.

[0126] The embodiments illustrated herein are described in sufficient detail to enable those skilled in the art to practice the disclosed teachings. Other embodiments may be used and derived from the above embodiments, and structural and logical substitutions and changes may be made without departing from the scope of the present disclosure. Therefore, the "Description of Embodiments" section should not be taken in a limiting sense, and the scope of the various embodiments is defined only by the appended claims, along with any equivalents to which such claims are entitled.

[0127] The claims may not recite all features disclosed herein, and an embodiment may feature a subset of the features recited. Further, an embodiment may include fewer features than those disclosed in a particular example. Thus, the following claims are hereby incorporated into the "Description of the Invention" section, with the claims standing on their own as separate embodiments.

[0128] As used herein, the term "or" may be interpreted in either an inclusive or exclusive sense. Furthermore, multiple instances may be provided for resources, operations, or structures described herein as a single instance. Moreover, boundaries between various resources, operations, modules, engines, and data stores are somewhat arbitrary, and particular operations are illustrated in the context of specific example configurations. Other allocations of functionality are contemplated and may fall within the scope of various embodiments of the disclosure. In general, structures and functions presented as separate resources in an example configuration may be implemented as a composite structure or resource. Similarly, structures and functions presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements fall within the scope of the embodiments of the disclosure as expressed by the appended claims. Accordingly, the specification and drawings are to be regarded as illustrative and not restrictive. The present disclosure includes the following application examples: [Application example 1] 1. A temperature controlled showerhead assembly comprising: a stem including a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate thermally coupled to the stem and attached to the backplate, the faceplate and the backplate defining a plenum therebetween; a convective heat transfer element (CHTE) thermally coupled to the backplate, the CHTE having an interior plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet passage for removing the flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages, the received flow of cooling gas being thermally coupled with a surface of the backplate; A temperature controlled showerhead assembly comprising: [Application example 2] The temperature controlled showerhead assembly according to Application Example 1, the flow of cooling gas is received through a first opening in the stem connected to the first cooling gas passage of the plurality of cooling gas passages; the flow of cooling gas is removed through a second opening in the stem connected to the second cooling gas passage of the plurality of cooling gas passages. Temperature controlled shower head assembly. [Application example 3] The temperature controlled showerhead assembly according to application example 2, a sealing cup structure attached to the stem and the backplate by a circular weld and forming an airtight enclosure for the CHTE; The temperature controlled showerhead assembly further comprises: [Application example 4] A temperature-controlled showerhead assembly according to Application Example 3, wherein the first opening and the second opening are located in a portion of the stem surrounded by the sealing cup. [Application example 5] A temperature-controlled showerhead assembly according to application example 1, wherein the CHTE comprises a plurality of stacked thermally conductive plates forming the inlet passage and the outlet passage. [Application Example 6] A temperature-controlled showerhead assembly as described in Application Example 1, wherein the CHTE comprises a plurality of fins that form a plurality of channels associated with the inlet path and the outlet path. [Application Example 7] In the temperature controlled showerhead assembly according to application example 1, the cooling gas passages are Clean Dry Air (CDA), argon, helium, Nitrogen, and hydrogen a temperature controlled showerhead assembly configured to flow at least one of: [Application Example 8] 2. The temperature-controlled showerhead assembly of claim 1, wherein the inlet passage of the CHTE is at least partially defined by the surface of the backplate. [Application Example 9] 2. The temperature-controlled showerhead assembly of claim 1, wherein the inlet pathway is configured to receive the flow of cooling gas through a first subset of the plurality of cooling gas passages and the outlet pathway is configured to remove the flow of cooling gas through a second subset of the plurality of cooling gas passages. [Example 10] 1. A temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber, comprising: a temperature controlled showerhead in the semiconductor device processing chamber, a stem including a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate attached to the backplate, the faceplate and the backplate defining a plenum therebetween; at least one temperature sensor thermally coupled to the backplate and configured to measure a temperature of at least one surface region of the backplate; a convective heat transfer element (CHTE) thermally coupled to the backplate, the CHTE having an interior plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet passage for removing the flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages, the received flow of cooling gas being thermally coupled with a surface of the backplate; A temperature controlled shower head comprising: a controller coupled to the plurality of cooling gas passages and the at least one temperature sensor of the showerhead, the controller configured to set a rate of the flow of cooling gas through the inlet path of the CHTE based on the measured temperature; and A temperature control system comprising: [Application Example 11] In the system according to application example 10, the controller periodically obtaining said measured temperature from said at least one temperature sensor; dynamically adjusting the flow rate of the cooling gas based on the measured temperature. The system is configured as follows. [Application Example 12] The system of application example 10, wherein the CHTE comprises a plurality of stacked thermally conductive plates forming the inlet and outlet paths. [Application Example 13] The system of application example 10, wherein the CHTE comprises a plurality of vertical and horizontal fins that form a plurality of channels associated with the inlet path and the outlet path. [Example 14] The system of application example 10, wherein the CHTE comprises a plurality of flow impingement devices that form the inlet passage. [Example 15] The system of application example 14, wherein the plurality of flow collision devices comprises at least a first subset of nozzles forming the inlet passage. [Example 16] A system as described in Application Example 15, wherein the plurality of flow collision devices comprises at least a second nozzle subset, the first nozzle subset being associated with a first nozzle width and the second nozzle subset being associated with a second nozzle width different from the first nozzle width. [Application Example 17] The system of application example 14, wherein the plurality of flow impingement devices comprises a plurality of vertical barriers, the plurality of vertical barriers being perpendicular to a surface area of ​​the backplate. [Example 18] 1. A temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber, comprising: a temperature controlled showerhead in the semiconductor device processing chamber, a stem including a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate attached to the backplate, the faceplate and the backplate defining a plenum therebetween, the plenum receiving process gas through the at least one process gas delivery passage; and a plurality of temperature sensors thermally coupled to the backplate or the faceplate and configured to measure a plurality of temperatures of corresponding heating zones of the backplate; a convective heat transfer element (CHTE) thermally coupled to the backplate, the CHTE comprising a plurality of inlet paths configured to receive a flow of cooling gas through a first subset of the plurality of cooling gas passages and a plurality of outlet paths for removing the flow of cooling gas from the CHTE through a second subset of the plurality of cooling gas passages, the received flow of cooling gas for each of the plurality of inlet paths being thermally coupled to a corresponding one of the plurality of heating zones of the backplate; A temperature controlled shower head comprising: a controller coupled to the plurality of cooling gas passages and the plurality of temperature sensors, the controller configured to set a flow rate for each of the flows of cooling gas through the plurality of inlet paths of the CHTE based on the measured temperatures; and a cooling system coupled to at least the second subset of the plurality of cooling gas passages and configured to cool the flow of cooling gas removed from the CHTE; A temperature control system comprising: [Example 19] The system of application example 18, wherein the multiple heating zones are configured as azimuthal heating zones relative to the center of the stem. [Example 20] The system of application example 18, wherein the multiple heating zones are configured as radial heating zones relative to a center of the stem. [Example 21] In the system according to application example 18, the controller is periodically obtaining the measured temperatures from the temperature sensors; dynamically adjusting the flow rates for one or more of the flows of cooling gas through the inlet paths of the CHTE based on the measured temperatures. The system is configured as follows. [Example 22] The system of application example 18, wherein the CHTE comprises a plurality of stacked thermally conductive plates forming the plurality of inlet paths and the plurality of outlet paths. [Example 23] The system of Example 18, wherein the CHTE comprises a plurality of vertical and horizontal fins that form a plurality of channels associated with the plurality of inlet paths and the plurality of outlet paths. [Example 24] The system of Example 18, wherein the CHTE comprises a plurality of flow impingement devices that form the plurality of inlet paths.

Claims

1. 1. A temperature controlled showerhead assembly comprising: a stem including a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate thermally coupled to the stem and attached to the backplate, the faceplate and backplate defining a plenum therebetween; a convective heat transfer element (CHTE) thermally coupled to the backplate, the CHTE having an interior plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet passage for removing the flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages, the received flow of cooling gas being thermally coupled with a surface of the backplate; A temperature controlled showerhead assembly comprising:

2. 10. The temperature controlled showerhead assembly of claim 1, the flow of cooling gas is received through a first opening in the stem connected to the first cooling gas passage of the plurality of cooling gas passages; the flow of cooling gas is removed through a second opening in the stem connected to the second cooling gas passage of the plurality of cooling gas passages. Temperature controlled shower head assembly.

3. 3. The temperature controlled showerhead assembly of claim 2, a sealing cup structure attached to the stem and the backplate by a circular weld and forming an airtight enclosure for the CHTE; The temperature controlled showerhead assembly further comprises:

4. 4. The temperature controlled showerhead assembly of claim 3, wherein the first opening and the second opening are located in a portion of the stem surrounded by the sealing cup.

5. 2. The temperature controlled showerhead assembly of claim 1, wherein the CHTE comprises a plurality of stacked thermally conductive plates forming the inlet and outlet paths.

6. 10. The temperature controlled showerhead assembly of claim 1, wherein the CHTE comprises a plurality of fins that form a plurality of channels associated with the inlet and outlet paths.

7. 2. The temperature controlled showerhead assembly of claim 1 , wherein the plurality of cooling gas passages comprises: Clean Dry Air (CDA), argon, helium, Nitrogen, and hydrogen a temperature controlled showerhead assembly configured to flow at least one of:

8. 2. The temperature controlled showerhead assembly of claim 1 , wherein the inlet pathway of the CHTE is defined at least in part by the surface of the backplate.

9. 2. The temperature-controlled showerhead assembly of claim 1, wherein the inlet pathway is configured to receive the flow of cooling gas through a first subset of the plurality of cooling gas passages and the outlet pathway is configured to remove the flow of cooling gas through a second subset of the plurality of cooling gas passages.

10. 1. A temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber, comprising: a temperature controlled showerhead in the semiconductor device processing chamber, a stem including a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate attached to the backplate, the faceplate and the backplate defining a plenum therebetween; at least one temperature sensor thermally coupled to the backplate and configured to measure a temperature of at least one surface region of the backplate; a convective heat transfer element (CHTE) thermally coupled to the backplate, the CHTE having an interior plenum including an inlet passage for receiving a flow of cooling gas through at least a first cooling gas passage of the plurality of cooling gas passages and an outlet passage for removing the flow of cooling gas from the CHTE through at least a second cooling gas passage of the plurality of cooling gas passages, the received flow of cooling gas being thermally coupled with a surface of the backplate; A temperature controlled shower head comprising: a controller coupled to the plurality of cooling gas passages and the at least one temperature sensor of the showerhead, the controller configured to set a flow rate of the flow of cooling gas through the inlet path of the CHTE based on the measured temperature; and A temperature control system comprising:

11. 11. The system of claim 10, wherein the controller: periodically obtaining the measured temperature from the at least one temperature sensor; dynamically adjusting the flow rate of the cooling gas based on the measured temperature. The system is configured as follows.

12. 11. The system of claim 10, wherein the CHTE comprises a plurality of stacked thermally conductive plates forming the inlet and outlet paths.

13. 11. The system of claim 10, wherein the CHTE comprises a plurality of vertical and horizontal fins that form a plurality of channels associated with the inlet and outlet paths.

14. The system of claim 10 , wherein the CHTE comprises a plurality of flow impingement devices forming the inlet pathway.

15. The system of claim 14 , wherein the plurality of flow impingement devices comprises at least a first subset of nozzles forming the inlet passage.

16. 16. The system of claim 15, wherein the plurality of flow impingement devices comprises at least a second subset of nozzles, the first subset of nozzles being associated with a first nozzle width and the second subset of nozzles being associated with a second nozzle width different from the first nozzle width.

17. The system of claim 14 , wherein the plurality of flow impingement devices comprises a plurality of vertical barriers, the plurality of vertical barriers being perpendicular to a surface area of ​​the backplate.

18. 1. A temperature control system for controlling a showerhead temperature in a semiconductor device processing chamber, comprising: a temperature controlled showerhead in the semiconductor device processing chamber, a stem including a plurality of cooling gas passages and at least one process gas delivery passage, the at least one process gas delivery passage entering the stem at a first end and exiting the stem at a second end opposite the first end; a backplate structurally coupled to the stem at the second end; a faceplate attached to the backplate, the faceplate and the backplate defining a plenum therebetween, the plenum receiving process gas through the at least one process gas delivery passage; and a plurality of temperature sensors thermally coupled to the backplate or the faceplate and configured to measure a plurality of temperatures of corresponding heating zones of the backplate; a convective heat transfer element (CHTE) thermally coupled to the backplate, the CHTE comprising a plurality of inlet paths configured to receive a flow of cooling gas through a first subset of the plurality of cooling gas passages and a plurality of outlet paths for removing the flow of cooling gas from the CHTE through a second subset of the plurality of cooling gas passages, the received flow of cooling gas for each of the plurality of inlet paths being thermally coupled to a corresponding one of the plurality of heating zones of the backplate; A temperature controlled shower head comprising: a controller coupled to the plurality of cooling gas passages and the plurality of temperature sensors, the controller configured to set a flow rate for each of the flows of cooling gas through the plurality of inlet paths of the CHTE based on the measured temperatures; and a cooling system coupled to at least the second subset of the plurality of cooling gas passages and configured to cool the flow of cooling gas removed from the CHTE; A temperature control system comprising:

19. 20. The system of claim 18, wherein the plurality of heating zones are configured as radial heating zones about a center of the stem.

20. 20. The system of claim 18, wherein the controller: periodically obtaining the measured temperatures from the temperature sensors; dynamically adjusting the flow rates for one or more of the flows of cooling gas through the inlet paths of the CHTE based on the measured temperatures. The system is configured as follows.

21. 20. The system of claim 18, wherein the CHTE comprises a plurality of stacked thermally conductive plates forming the plurality of inlet paths and the plurality of outlet paths.

22. 20. The system of claim 18, wherein the CHTE comprises a plurality of vertical and horizontal fins forming a plurality of channels associated with the plurality of inlet paths and the plurality of outlet paths.

23. 20. The system of claim 18, wherein the CHTE comprises a plurality of flow impingement devices that define the plurality of inlet paths.

Images