Film forming apparatus and film forming method

Abstract

To provide a film deposition apparatus and a film deposition method for improving productivity.SOLUTION: A film deposition apparatus for depositing an ALD film on a substrate G includes: a rotation drum for holding the substrate on a holding side surface parallel to the axis of rotation; and a treatment chamber 4 including a body part for storing the rotation drum. The body part includes: a plurality of treatment chambers 4 facing the holding side surface and having a long-sized treatment space in the longitudinal direction parallel to the axis of rotation; and an exhaust part arranged between the plurality of treatment chambers. The plurality of treatment chambers include at least a raw material gas adsorption chamber for adsorbing material gas on the substrate and a plasma reaction chamber for generating plasma reacting with the material gas adsorbed on the substrate from reactant gas. The plasma reaction chamber includes: a frame; a long-sized metal window facing the holding side surface, constituted of a plurality of division windows linearly arranged at a first interval in the longitudinal direction of the plasma reaction chamber and arranged at a second interval larger than the first interval in the space of the frame on a side extended in the longitudinal direction; and a rectangular coil antenna.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a film forming apparatus and a film forming method. [Background technology]

[0002] Patent Document 1 discloses a film formation apparatus in which a substrate is placed on a substrate mounting area within a vacuum chamber, and the substrate is caused to revolve by rotating a turntable, causing the substrate to pass through multiple processing sections in sequence, thereby completing a cycle of supplying multiple types of processing gas in sequence, thereby performing a film formation process on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-84730 A Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a film formation apparatus and a film formation method that improve productivity. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a film formation apparatus for performing ALD film formation on a substrate includes a processing chamber having a rotating drum that holds the substrate on a holding side parallel to a rotation axis, and a main body that houses the rotating drum, the main body having a plurality of processing chambers facing the holding side and having an elongated processing space with a longitudinal direction parallel to the rotation axis, and an exhaust unit disposed between each of the plurality of processing chambers, the plurality of processing chambers including at least a source gas adsorption chamber that adsorbs a source gas onto the substrate, and a plasma reaction chamber that generates, from a reaction gas, a plasma that reacts with the source gas adsorbed onto the substrate, the plasma reaction chamber being ,before facing the holding side surface, The longitudinal direction is parallel toA long metal window ,vertical a wound rectangular coil antenna, the metal window is composed of a frame provided on an upper portion of a side wall of the plasma reaction chamber, and a plurality of partition windows arranged within the frame and aligned in a straight line at a first interval in the longitudinal direction of the metal window, a second interval between an edge of the partition window extending in the longitudinal direction of the metal window and the frame is wider than the first interval, the vertically wound rectangular coil antenna is arranged outside the plasma reaction chamber corresponding to each of the partition windows, has a flat portion facing the partition windows, and is configured by winding an antenna wire around a winding axis that is parallel to the partition windows and perpendicular to the longitudinal direction of the metal window, The planar portions form a common planar region. do A film forming apparatus is provided having the following configuration. Effect of the Invention

[0006] According to one aspect, it is possible to provide a film forming apparatus and a film forming method that improve productivity. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view showing an example of a configuration of a substrate processing system. [Diagram 2] 4 is an example of a schematic diagram illustrating the operation of the winding / unwinding chamber. FIG. [Diagram 3] 1 is a schematic cross-sectional view of a processing chamber according to an embodiment of the present invention; [Figure 4] 13 is an example of a schematic diagram illustrating another example of the configuration of the processing chamber. [Diagram 5] 2 is a schematic diagram of a processing chamber 4 as viewed in the substrate transport direction. [Figure 6] 11 is a graph showing an example of a simulation result showing separation of a source gas adsorption chamber and a plasma reaction chamber. [Figure 7] 11 is a graph showing an example of a simulation result showing separation of a source gas adsorption chamber and a plasma reaction chamber. [Figure 8] FIG. 2 is a perspective view of a metal window and a radio frequency antenna. [Figure 9] 1 is a plan view showing the arrangement of a metal window and a high-frequency antenna in a reference example, and a graph showing electric field intensity. [Figure 10] 1A and 1B are a plan view showing the arrangement of a metal window and a high-frequency antenna in the first embodiment and a graph showing electric field intensity. [Figure 11] 1 is an example of a graph showing the relationship between the distance between divided metal windows and the uniformity of the electric field intensity. [Figure 12] 13 is a plan view showing the arrangement of a metal window and a high-frequency antenna according to a second embodiment, and a graph showing electric field intensity. [Figure 13] 13 is a plan view showing the arrangement of a metal window and a high-frequency antenna according to a third embodiment, and a graph showing an example of electric field intensity. [Figure 14] 13 is an example of a graph illustrating the relationship between the width of the outer peripheral frame of an insulating member and the uniformity of the electric field strength and the electric field strength. [Figure 15] FIG. 13 is a plan view showing an example of the arrangement of metal windows in the third to fifth embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] <Substrate processing system> A substrate processing system 1 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is an example of a perspective view showing the configuration of the substrate processing system 1.

[0010] The substrate processing system 1 includes a load lock chamber 2, a winding / unwinding chamber 3, a processing chamber (processing chamber) 4, a drum 5, and a control unit 9.

[0011] Here, the substrate G to be processed in the substrate processing system 1 is a flexible substrate that is rectangular in plan view. The substrate G may be, for example, a flexible rectangular glass substrate. The substrate G may also be, for example, a thin glass substrate having a thickness of about 0.1 mm to several mm. The substrate G may also have planar dimensions that include at least dimensions ranging from about 730 mm×920 mm for 4.5th generation to about 3000 mm×3400 mm for 10.5th generation.

[0012] The load lock chamber 2 is connected to a transfer chamber (not shown) with an atmospheric atmosphere via a gate valve 21. The load lock chamber 2 has a placement section (not shown) that can be raised and lowered in the vertical direction and that accommodates a plurality of substrates G in the height direction. The load lock chamber 2 is connected to a winding / unwinding chamber 3 with a vacuum atmosphere via a gate valve 22. The load lock chamber 2 is configured to be able to switch between an atmospheric atmosphere and a vacuum atmosphere.

[0013] The winding / unwinding chamber 3 is connected to the load lock chamber 2 via a gate valve 22. The winding / unwinding chamber 3 is also connected to the processing chamber 4. The drum 5 is configured to be able to move axially between a position 5A (shown by a dashed line) of the drum 5 in the winding / unwinding chamber 3 and a position 5B (shown by a two-dot chain line) of the drum 5 in the processing chamber 4. The drum 5 is also configured to be rotatable in the winding / unwinding chamber 3 and the processing chamber 4. The drum 5 is cylindrical and configured to be able to adsorb and hold the substrate G on its outer circumferential surface (holding side surface) parallel to the rotation axis.

[0014] Here, the operation of the winding / unwinding chamber 3 will be described with reference to Fig. 2. Fig. 2 is an example of a schematic diagram illustrating the operation of the winding / unwinding chamber 3.

[0015] 2(a) is an example of a schematic diagram illustrating an operation (winding operation) of holding the substrate G on the drum 5. A transport device 23 is provided to transport the substrate G from the load lock chamber 2 to the winding / unwinding chamber 3. The drum 5 is also provided with a locking portion 51 and a bipolar electrostatic chuck 52. The transport device 23 transports the substrate G, and the front end of the substrate G is locked by the locking portion 51 of the drum 5. Then, while the transport device 23 sends the substrate G in the direction from the load lock chamber 2 to the winding / unwinding chamber 3, the bipolar electrostatic chuck 52 is driven to rotate the drum 5 (clockwise in FIG. 2(a)), whereby the substrate G can be held on the outer circumferential surface of the drum 5 by electrostatic adsorption.

[0016] A plurality of substrates G are held in the circumferential direction on the outer circumferential surface of the drum 5. In addition, by being held on the outer circumferential surface of the drum 5, stress is generated in the substrates G due to bending. Here, when four sixth generation substrates G having a thickness of 0.5 mm are adsorbed in the circumferential direction of the drum 5, the radius of the drum 5 is, for example, 955 mm, and the stress generated by bending the substrates G is, for example, 18 MPa. In contrast, the fracture stress of the substrates G is, for example, 50 MPa. In this way, the substrates G can be held on the outer circumferential surface of the drum 5 with a safety factor of two or more.

[0017] 2(b) is an example of a schematic diagram illustrating an operation (rewinding operation) of detaching the substrate G from the drum 5. The winding / unwinding chamber 3 is provided with an ionizer 53 that neutralizes the charge on the substrate G. The substrate G is detached from its rear end side by releasing the electrostatic attraction by the electrostatic chuck 52 and neutralizing the charge with the ionizer 53. Then, while rotating the drum 5 in the reverse direction (counterclockwise in FIG. 2(b)), the transport device 23 sends the substrate G in the direction from the winding / unwinding chamber 3 to the load lock chamber 2, whereby the substrate G held on the outer circumferential surface of the drum 5 can be detached and transported to the load lock chamber 2.

[0018] Returning to FIG. 1, the substrate G accommodated in the placement section of the load lock chamber 2 is transported by the transport device 23 to the winding / unwinding chamber 3, where it is held on the outer circumferential surface of the drum 5 by a winding operation. The drum 5 holding the substrate G moves from the winding / unwinding chamber 3 to the processing chamber 4. In the processing chamber 4, the drum 5 is rotated and a film formation process is performed on the substrate G. After the film formation process is performed on the substrate G in the processing chamber 4, the drum 5 moves from the processing chamber 4 to the winding / unwinding chamber 3. The substrate G is then detached from the drum 5 by a rewinding operation, transported by the transport device 23 to the load lock chamber 2, and accommodated in the placement section of the load lock chamber 2.

[0019] The control unit 9 controls each component of the substrate processing system 1. The control unit 9 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a predetermined process according to a recipe stored in a storage area of ​​the RAM or ROM.

[0020] <Processing room> Next, the processing chamber 4 will be described with reference to Fig. 3. Fig. 3 is an example of a schematic cross-sectional view of the processing chamber 4. Fig. 3 is a cross-sectional view seen in the direction of the rotation axis of the drum 5. An example of the rotation direction of the drum 5 is indicated by an arrow.

[0021] The processing chamber 4 includes a main body 41 that houses a rotating drum 5. The main body 41 includes a drum chamber 42, a source gas adsorption chamber 43, a plasma reaction chamber 44, a purge gas chamber 45, and an exhaust section 46.

[0022] The drum chamber 42 is a cylindrical space formed inside the main body 41, and is formed so that the drum 5 holding the substrate G can rotate inside the drum chamber 42.

[0023] The source gas adsorption chamber 43 is formed radially outward of the drum chamber 42, facing the outer circumferential surface of the drum 5. The source gas adsorption chamber 43 is an elongated space whose longitudinal direction is parallel to the rotation axis of the drum 5. A source gas is supplied to the source gas adsorption chamber 43 from a source gas supply unit 61. The source gas may be, for example, trisilylamine (TSA:N(SiH 3 ) 3 ) can be used.

[0024] The plasma reaction chamber 44 is formed radially outward of the drum chamber 42 facing the outer circumferential surface of the drum 5, and is formed at a position different from the source gas adsorption chamber 43 in the rotation direction of the drum 5. The plasma reaction chamber 44 is an elongated space whose longitudinal direction is parallel to the rotation axis of the drum 5. Inside the plasma reaction chamber 44, plasma of a reactive gas is generated by the plasma generation unit 7. The reactive gas may be, for example, N 2 A gas may be used.

[0025] The purge gas chamber 45 is formed radially outside the drum chamber 42 facing the outer circumferential surface of the drum 5, and is formed between the source gas adsorption chamber 43 and the plasma reaction chamber 44 in the rotation direction of the drum 5. The purge gas chamber 45 is an elongated space whose longitudinal direction is parallel to the rotation axis of the drum 5. A purge gas is supplied to the purge gas chamber 45 from a purge gas supply unit 63. For example, Ar gas can be used as the purge gas.

[0026] The exhaust section 46 is formed radially outside the drum chamber 42 facing the outer circumferential surface of the drum 5, and is formed between the source gas adsorption chamber 43 and the purge gas chamber 45 and between the plasma reaction chamber 44 and the purge gas chamber 45 in the rotation direction of the drum 5. The exhaust section 46 is an elongated space whose longitudinal direction is parallel to the rotation axis of the drum 5. The exhaust section 46 is connected to an exhaust device (not shown), and gas in the exhaust section 46 is exhausted to the outside of the processing chamber 4.

[0027] The processing chamber 4 also includes a plasma generating unit 7. The plasma generating unit 7 has a metal window 70, a rectangular coil antenna 73, a high-frequency power supply 74, and a case 75. The plasma generating unit 7 forms an induction electric field by the metal window 70 and the rectangular coil antenna 73, and generates plasma from a reactive gas (plasma material gas) by the induction electric field.

[0028] The metal window 70 has a conductor plate 71 and a shower plate 72. Both the conductor plate 71 and the shower plate 72 are made of aluminum, an aluminum alloy, stainless steel, or the like, which is a non-magnetic, conductive, and corrosion-resistant metal or a metal that has been subjected to a corrosion-resistant surface treatment. Examples of the corrosion-resistant surface treatment include anodizing and ceramic spraying. In addition, the lower surface of the shower plate 72 facing the plasma reaction chamber 44 may be subjected to a plasma-resistant coating by anodizing or ceramic spraying. The conductor plate 71 may be grounded via a ground wire (not shown). The shower plate 72 and the conductor plate 71 are joined so as to be conductive to each other.

[0029] A gas supply chamber 76 is formed between the conductive plate 71 and the shower plate 72, and a reactive gas is supplied from the reactive gas supply unit 62. The reactive gas may be, for example, N 2 The reactive gas supplied from the reactive gas supply unit 62 passes through the gas discharge holes of the shower plate 72 from the gas supply chamber 76 and is supplied to the plasma reaction chamber 44.

[0030] A spacer (not shown) made of an insulating material is disposed above the metal window 70, and a rectangular coil antenna 73 is disposed at a distance from the conductive plate 71 by the spacer. The rectangular coil antenna 73 is formed by winding an antenna wire made of a metal with good electrical conductivity such as copper in a spiral or circular shape. For example, a plurality of circular antenna wires may be disposed in parallel in a multiplexed manner.

[0031] Moreover, the rectangular coil antenna 73 is connected to a high frequency power supply 74. When high frequency power of, for example, 13.56 MHz is applied from the high frequency power supply 74 to the rectangular coil antenna 73, an induced current is induced in the metal window 70, and an induced electric field is formed in the plasma reaction chamber 44 by the induced current induced in the metal window 70. This induced electric field converts the reactive gas supplied from the shower plate 72 to the plasma reaction chamber 44 into plasma, generating inductively coupled plasma.

[0032] The case 75 houses the metal window 70 and the rectangular coil antenna 73 .

[0033] Next, a description will be given of the film formation process in the processing chamber 4. By rotating the drum 5, the substrate G held on the outer peripheral surface of the drum 5 passes through the source gas adsorption chamber 43, the exhaust section 46, the purge gas chamber 45, the exhaust section 46, the plasma reaction chamber 44, the exhaust section 46, the purge gas chamber 45, and the exhaust section 46 in that order. As a result, in the processing chamber 4, a SiN film is formed on the substrate G by an ALD (Atomic Layer Deposition) method within the processing vessel under reduced pressure.

[0034] By rotating the drum 5, the substrate G is transported to the source gas adsorption chamber 43. In the source gas adsorption chamber 43, the source gas is adsorbed onto the surface of the substrate G.

[0035] Next, the substrate G is transferred to the purge gas chamber 45. In the purge gas chamber 45, excess source gas and the like are removed by purging.

[0036] Next, the substrate G is transferred to the plasma reaction chamber 44. In the plasma reaction chamber 44, the source gas adsorbed on the surface of the substrate G reacts with the reactive gas in plasma form, depositing a SiN film.

[0037] Next, the substrate G is transferred to the purge gas chamber 45. In the purge gas chamber 45, excess reaction gas and the like are removed by purging.

[0038] As a result, one ALD cycle is performed on the substrate G, and one layer of a SiN film is deposited. Then, the drum 5 is rotated, and the ALD cycle is repeated until a predetermined film thickness is reached, thereby forming a SiN film on the substrate G.

[0039] In addition to the above, the following combinations of source gas and reaction gas can be used. 2 Cl 2 ), and the reaction gas is N 2 or NH 3 The raw gas is monochlorosilane (MCS: SiH 3 Cl), and the reaction gas is N 2 or NH 3 The source gas is trisilylamine (TSA:N(SiH 3 ) 3 ), and the reaction gas is N 2 The raw material gas can be silicon fluoride (SiF 4 ), and the reaction gas is N 2These gas combinations allow the SiN film to be formed at low temperatures of 100° C. or less. This allows the SiN film to be formed at low temperatures on elements with low heat resistance (e.g., OLEDs).

[0040] Moreover, the source gas is preferably any one of dichlorosilane, monochlorosilane, and trisilylamine, which are gases having polarity. This allows the source gas to be suitably adsorbed on the surface of the substrate G.

[0041] In addition, the processing chamber 4 shown in FIG. 3 is described as an example in which one source gas adsorption chamber 43 and one plasma reaction chamber 44 are provided and one ALD cycle is performed every time the drum 5 rotates once, but the present invention is not limited to this.

[0042] FIG. 4 is an example of a schematic diagram for explaining another configuration example of the processing chamber 4. The processing chamber 4 may include a plurality of source gas adsorption chambers 43 and plasma reaction chambers 44. In the example shown in FIG. 4, the processing chamber 4 includes two source gas adsorption chambers 43 and two plasma reaction chambers 44. In addition, a purge gas chamber 45 is formed between the source gas adsorption chamber 43 and the plasma reaction chamber 44. In addition, an exhaust section 46 is formed between the source gas adsorption chamber 43 and the purge gas chamber 45 and between the plasma reaction chamber 44 and the purge gas chamber 45. In the processing chamber 4 shown in FIG. 4, two ALD cycles are performed every time the drum 5 rotates once. This improves the film formation speed of the SiN film and improves the productivity of the substrate processing system 1.

[0043] Fig. 5 is a schematic diagram of the processing chamber 4 as viewed in the transport direction of the substrate G. Fig. 5 is a schematic diagram in which the rotation direction of the drum 5 shown in Fig. 4 is illustrated as the left-right direction. By rotating the drum 5 at a predetermined speed, the substrate G moves through the source gas adsorption chamber 43, the exhaust section 46, the purge gas chamber 45, the exhaust section 46, the plasma reaction chamber 44, the exhaust section 46, the purge gas chamber 45, and the exhaust section 46. The residence time in each chamber is set by the length of each chamber along the rotation direction of the drum 5 (the left-right width in Fig. 5).

[0044] Next, the separation of the source gas adsorption chamber 43 and the plasma reaction chamber 44 will be described with reference to Fig. 6 and Fig. 7. Fig. 6 and Fig. 7 are graphs showing an example of a simulation result showing the separation of the source gas adsorption chamber 43 and the plasma reaction chamber 44.

[0045] 6(a) is an example of a graph showing a change in pressure. The vertical axis indicates pressure, and the horizontal axis indicates the arc length (length along the rotation direction of the drum 5) on the inner circumferential surface of the drum chamber 42. In FIG. 6 and FIG. 7 described later, TSA corresponds to the source gas adsorption chamber 43, N 2 corresponds to the plasma reaction chamber 44, and Ar corresponds to the purge gas chamber 45. The position indicated by the dotted line corresponds to the exhaust section 46. As shown in Fig. 6(a), the pressure is reduced at the position of the exhaust section 46.

[0046] FIG. 6(b) is an example of a graph showing the change in concentration of each gas. The vertical axis indicates the concentration of each gas, and the horizontal axis indicates the arc length (length along the rotation direction of the drum 5) on the inner circumferential surface of the drum chamber 42. In FIG. 6(b) and FIG. 7 described later, N 2 6B, the concentration of TSA in the source gas adsorption chamber 43 decreases between the exhaust section 46, the purge gas chamber 45, and the exhaust section 46, and is sufficiently low in the plasma reaction chamber 44. This prevents TSA from flowing from the source gas adsorption chamber 43 into the plasma reaction chamber 44, and the TSA and N that have flowed in are mixed in the plasma reaction chamber 44. 2 This can prevent the CVD reaction between the metal and the oxide.

[0047] 7(a) to 7(c), the vertical axis indicates the mole fraction, and the horizontal axis indicates the arc length (length along the rotation direction of the drum 5) on the inner peripheral surface of the drum chamber 42. In addition, the flow rate of Ar gas is 1 sccm in Fig. 7(a), 10 sccm in Fig. 7(b), and 50 sccm in Fig. 7(c). The gap between the outer peripheral surface of the drum 5 and the inner peripheral surface of the drum chamber 42 was set to 3 mm.

[0048] As shown in Figure 7, by increasing the flow rate of Ar gas, 2 The gas and the TSA gas can be separated. The gap between the outer peripheral surface of the drum 5 and the inner peripheral surface of the drum chamber 42 is preferably about 3 mm. This is because if the gap is made wider, the amount of TSA flowing from the source gas adsorption chamber 43 into the plasma reaction chamber 44 increases.

[0049] Next, the configuration of the metal window 70 and the rectangular coil antenna 73 of the plasma generating unit 7 will be described with reference to Fig. 8. Fig. 8 is an example of a perspective view of the metal window 70 and the rectangular coil antenna 73.

[0050] The metal window 70 has a plurality of divided metal windows 77. It also has a support frame 78 and an insulating member 79. The divided metal windows 77 face the outer peripheral surface of the drum 5 and are linearly arranged in the longitudinal direction of the plasma reaction chamber 44 (the direction parallel to the rotation axis of the drum 5). In the example shown in FIG. 8, the divided metal window 77 is divided into three. The support frame 78 is provided on the upper part of the side wall of the plasma reaction chamber 44. For convenience, in FIG. 8, gaps are drawn between the divided metal windows 77 and between the support frame 78 and the divided metal window 77, with the insulating member 79 removed, in order to make the structure easier to understand. However, in reality, the insulating member 79 is provided in this gap to provide insulation. Here, the insulating member 79 is formed of a fluororesin such as PTFE (Polytetrafluoroethylene).

[0051] The rectangular coil antenna 73 is disposed outside the plasma reaction chamber 44, and is configured by winding an antenna wire made of a conductive material, such as copper, in a spiral shape. Three rectangular coil antennas 73 are provided so as to correspond to the three divided metal windows 77, respectively. This allows the induction electric field to be controlled by dividing the antenna into three regions: a region including one end, a central region, and a region including the other end.

[0052] Moreover, the rectangular coil antenna 73 has a plurality of antenna wires arranged in parallel on a flat portion 701 facing the split metal window 77. The plurality of antenna wires on the flat portion 701 are wound vertically and spirally so that current flows in the same direction. That is, the rectangular coil antenna 73 is formed by winding an antenna wire around a winding axis that is parallel to the split metal window 77 and perpendicular to the longitudinal direction of the split metal window 77. The flat portions 701 of the plurality of rectangular coil antennas 73 form a common flat area 702. The flat area 702 is formed to include the flat portions 701 aligned in a straight line in the longitudinal direction.

[0053] FIG. 9 shows an example of a plan view showing the arrangement of a metal window 70 and a rectangular coil antenna 73 of a reference example, and a graph showing the electric field intensity by simulation. FIG. 9(a) is an example of a plan view showing the arrangement of a metal window 70 and a rectangular coil antenna 73 of a reference example. In the metal window 70 of the reference example, the width of the insulating member 79 is made uniform. That is, the width of the insulating member 79 between the divided metal window 77 and the adjacent divided metal window 77 (first interval W1 ) and the width of the insulating member 79 between the split metal window 77 and the support frame 78 (second spacing W2 , the third interval W3 ) are formed to be equal to each other. Also, the width (second interval) of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the longitudinal direction W2 ) and the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction (third interval W3 ) are formed to be equal to each other. Furthermore, the longitudinal direction of the rectangular coil antenna 73 is formed to be shorter than the longitudinal direction of the divided metal window 77.

[0054] FIG. 9(b) is an example of a graph showing the electric field strength of the metal window 70 and the rectangular coil antenna 73 of the reference example. The horizontal axis is the distance in the longitudinal direction (parallel to the rotation axis of the drum 5), and the vertical axis is the electric field strength. The origin of the vertical axis is shifted to an appropriate value to make the distribution of the electric field strength easier to understand (a value of 40 in the figure). The unit of the electric field strength is [V / m], and is calculated by simulation as the electric field strength within the width of the substrate G along the center line of the metal window 70 in the longitudinal direction 30 mm below the metal window 70 (the same applies to each of the following examples). As shown in FIG. 9(b), in the metal window 70 and the rectangular coil antenna 73 of the reference example, the electric field strength varies in density. Here, "variations in density" refer to a distribution state in which the electric field strength is uneven over the distance direction as a whole, with strong and weak electric field strength occurring locally and being mixed.

[0055] FIG. 10 shows an example of a plan view illustrating the arrangement of the metal window 70 and rectangular coil antenna 73 of the first embodiment, and a graph showing the electric field intensity by simulation. FIG. 10(a) is an example of a plan view illustrating the arrangement of the metal window 70 and rectangular coil antenna 73 of the first embodiment. In the metal window 70 of the first embodiment, the width of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 (first interval W1 That is, the width (first spacing) of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 is narrowed. W1 ) is the width (second spacing) of the insulating member 79 between the split metal window 77 and the support frame 78 W2 , the third interval W3 In other words, the width of the insulating member 79 between the split metal window 77 and the support frame 78 (the second interval W2 , the third interval W3 ) is the width (first spacing) of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 W1 ) is formed wider than the width (second interval) of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the longitudinal direction. W2 ) and the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction (third interval W3In addition, the longitudinal direction of the rectangular coil antenna 73 is formed to be equal to the longitudinal direction of the divided metal window 77.

[0056] Fig. 10(b) is an example of a graph showing the electric field strength of the metal window 70 and rectangular coil antenna 73 of the first embodiment. The horizontal axis represents the distance in the longitudinal direction (parallel to the axis of rotation of the drum 5), and the vertical axis represents the electric field strength. As shown in Fig. 10(b), in the metal window 70 and rectangular coil antenna 73 of the first embodiment, the unevenness of the electric field strength is reduced and the uniformity of the electric field strength is improved compared to the reference example.

[0057] Here, the width of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 (first interval W1 ) is preferably 5 mm or more and 15 mm or less. This makes it possible to divide and control the induced electric field while improving the uniformity of the electric field strength.

[0058] FIG. 11 is a graph showing the relationship between the distance between the divided metal windows 77 (window distance) and the uniformity of the electric field strength. The vertical axis indicates the uniformity of the electric field strength, with smaller values ​​indicating better uniformity. The horizontal axis indicates the distance between the divided metal windows 77 (window distance). Also shown are the results when the distance between the rectangular coil antennas 73 is 60 mm and 20 mm. The uniformity of the electric field strength in FIG. 11 is calculated over the entire range of the metal window 70 corresponding to the substrate G.

[0059] As shown in Fig. 11, narrowing the inter-window distance improves the uniformity of the electric field strength. Note that the effect of a change in the distance between the rectangular coil antennas 73 on the uniformity of the electric field strength is smaller than the effect of a change in the inter-window distance on the uniformity of the electric field strength.

[0060] FIG. 12 shows an example of a plan view illustrating the arrangement of the metal window 70 and rectangular coil antenna 73 of the second embodiment, and a graph showing the electric field intensity by simulation. FIG. 12(a) is an example of a plan view illustrating the arrangement of the metal window 70 and rectangular coil antenna 73 of the second embodiment. In the metal window 70 of the second embodiment, the width of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 (first interval W1 That is, the width (first spacing) of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 is narrowed. W1 ) is the width (second spacing) of the insulating member 79 between the split metal window 77 and the support frame 78 W2 , the third interval W3 ) on the side extending in the longitudinal direction. W2 ) and the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction (third interval W3 ) are formed equally.

[0061] The rectangular coil antenna 73 is disposed beyond both ends of the multiple divided metal windows 77 in the longitudinal direction of the metal window 70. That is, the longitudinal direction of the rectangular coil antennas 73 at both ends is formed to be longer than the longitudinal direction of the divided metal windows 77, and is formed beyond the insulating member 79 up to above the support frame 78. The longitudinal direction of the central rectangular coil antenna 73 is formed to be equal in length to the longitudinal direction of the central divided metal window 77.

[0062] Fig. 12(b) is an example of a graph showing the electric field strength on the center line of the metal window 70 and rectangular coil antenna 73 of the second embodiment. The horizontal axis represents the distance in the longitudinal direction (parallel to the axis of rotation of the drum 5), and the vertical axis represents the electric field strength. As shown in Fig. 12(b), in the metal window 70 and rectangular coil antenna 73 of the second embodiment, the drop in electric field strength at both ends of the metal window 70 is improved, and the uniformity of the electric field strength is improved, compared to the first embodiment (see Fig. 10).

[0063] FIG. 13 is an example of a plan view showing the arrangement of the metal window 70 and rectangular coil antenna 73 of the third embodiment, and a graph showing the electric field intensity by simulation. FIG. 13(a) is an example of a plan view showing the arrangement of the metal window 70 and rectangular coil antenna 73 of the third embodiment. In the metal window 70 of the third embodiment, the width of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 (first interval W1 That is, the width (first spacing) of the insulating member 79 between the split metal window 77 and the adjacent split metal window 77 is narrowed. W1 ) is the width (second spacing) of the insulating member 79 between the split metal window 77 and the support frame 78 W2 , the third interval W3 ) on the side extending in the longitudinal direction. W2 ) and the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction (third interval W3 In the third embodiment, the width (second interval) of the insulating member 79 between the split metal window 77 and the support frame 78 is equal to that of the insulating member 79. W2 , the third interval W3 ) is wider than that of the second embodiment. The longitudinal direction of rectangular coil antennas 73 at both ends is longer than the longitudinal direction of split metal window 77, and extends beyond insulating member 79 up to above support frame 78. The longitudinal direction of central rectangular coil antenna 73 is equal to the longitudinal direction of central split metal window 77.

[0064] Fig. 13(b) is an example of a graph showing the electric field strength on the center line of the metal window 70 and rectangular coil antenna 73 of the third embodiment. The horizontal axis represents the distance in the longitudinal direction (parallel to the axis of rotation of the drum 5), and the vertical axis represents the electric field strength. As shown in Fig. 13(b), in the metal window 70 and rectangular coil antenna 73 of the third embodiment, the electric field efficiency is improved and the overall electric field strength value is larger than in the second embodiment (see Fig. 12).

[0065] Fig. 14 is an example of a graph illustrating the relationship between the width of the outer peripheral frame of the insulating member 79 and the uniformity of the electric field strength and the electric field strength. The uniformity of the electric field strength in Fig. 14 is calculated over the entire range of the metal window 70 corresponding to the substrate G. As the width of the outer peripheral frame of the insulating member 79 increases, the uniformity of the electric field strength (black circular dots in the figure) improves. Also, as the width of the outer peripheral frame of the insulating member 79 increases, the electric field strength (black square dots in the figure) increases, i.e., the electric field efficiency improves. In the example shown in Fig. 14, a tendency for saturation is observed at 80 mm.

[0066] Here, the width (second gap) of the insulating member 79 between the divided metal window 77 and the support frame 78 is preferably 20 mm or more and 100 mm or less, and more preferably 40 mm or more and 80 mm or less. This makes it possible to improve the uniformity of the electric field strength while dividing and controlling the induced electric field.

[0067] Fig. 15 is an example of a plan view showing the arrangement of the metal window 70 in the third to fifth embodiments. Fig. 15(a) shows the arrangement of the metal window 70 in the third embodiment, Fig. 15(b) shows the arrangement of the metal window 70 in the fourth embodiment, and Fig. 15(c) shows the arrangement of the metal window 70 in the fifth embodiment.

[0068] In the metal window 70 of the third embodiment shown in FIG. 15(a), the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the longitudinal direction (second spacing W2 ) and the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction (third interval W3 ) are formed to be of equal length.

[0069] In the metal window 70 of the fourth embodiment shown in FIG. 15(b), the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction (third spacing W3 ) is the width (second spacing) of the insulating member 79 between the divided metal window 77 and the support frame 78 at the side extending in the longitudinal direction. W2 ) is shorter than the

[0070] In the metal window 70 of the fifth embodiment shown in FIG. 15(c), the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the longitudinal direction (second spacing W2 ) is the width (third interval) of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the short direction. W3 ) is shorter than the

[0071] Here, in the metal window 70 of the third embodiment, the uniformity of the electric field strength across the entire metal window 70 within the width of the substrate G was 15.6%, and the uniformity of the electric field strength on the center line was 4.7%. The average electric field was 61.8 V / m. In contrast, in the metal window 70 of the fourth embodiment, the uniformity of the electric field strength across the entire metal window 70 within the width of the substrate G was 15.5%, and the uniformity of the electric field strength on the center line was 3.6%. The average electric field was 61.7 V / m. Meanwhile, in the metal window 70 of the fifth embodiment, the uniformity of the electric field strength across the entire metal window 70 within the width of the substrate G was 44.6%, and the uniformity of the electric field strength on the center line was 9.0%. The average electric field was 19.1 V / m.

[0072] In this way, in the metal window 70 of the fifth embodiment, the width of the insulating member 79 between the divided metal window 77 and the support frame 78 on the side extending in the longitudinal direction (the second spacing W2 ) is narrowed, the magnetic field passing through the metal window 70 becomes difficult to escape, and the electric field strength decreases. In addition, the uniformity of the electric field strength deteriorates. In other words, as shown in FIG. 15(b), when the width of the insulating member 79 between the split metal window 77 and the support frame 78 is widened, the width of the insulating member 79 between the split metal window 77 and the support frame 78 on the side extending in the longitudinal direction (the second spacing W2 ) is preferably made wider. This can improve the average electric field and the uniformity of the electric field, as shown in FIG.

[0073] According to the substrate processing system 1 of this embodiment, a SiN film can be formed by ALD film formation. By forming a film one atomic layer at a time by ALD film formation, a thin and dense SiN film with a high dielectric constant can be formed. As a result, the substrate processing system 1 can be applied to, for example, a film formation device for a High-K film of an OLED element. By increasing the dielectric constant of the High-K film and increasing the capacitance, it is possible to realize low-frequency driving of an OLED device. In addition, a dense SiN film with good coverage can be formed. As a result, the substrate processing system 1 can be applied to, for example, a film formation device for a sealing film that protects an OLED element from moisture.

[0074] Here, in a film forming apparatus that performs ALD film formation by replacing the gas in the chamber, a process of supplying a source gas to the chamber, a process of supplying a purge gas to the chamber to purge excess source gas, etc., a process of supplying a plasma of a reactive gas to the chamber, and a process of supplying a purge gas to the chamber to purge excess reactive gas, etc. are repeated to form a SiN film on a substrate. Therefore, in a film forming apparatus that performs ALD film formation by replacing the gas in the chamber, the time required for processing increases and productivity decreases. In contrast, according to the substrate processing system 1 of this embodiment, the ALD cycle can be repeated on the substrate G by rotating the drum 5, so that productivity can be improved.

[0075] Moreover, by providing a plurality of reaction chambers (source gas adsorption chamber 43, plasma reaction chamber 44) in the processing chamber 4, it is possible to perform a plurality of ALD cycles per one rotation of the drum 5, thereby improving productivity. Also, by rotating the drum 5 at high speed, the time required for one ALD cycle can be shortened, thereby improving productivity.

[0076] Furthermore, in a film forming apparatus in which a turntable on which a substrate is placed is rotated to pass the substrate through a plurality of processing sections in sequence, there is a problem that the turntable becomes large and the film forming apparatus also becomes large for a large glass substrate G such as an FPD. In contrast, according to the substrate processing system 1 of this embodiment, the substrate G can be held on the outer circumferential surface of the drum 5, so that the increase in size of the apparatus can be suppressed.

[0077] In addition, the substrate processing system 1 has been described as a system for forming a SiN film by ALD, but the present invention is not limited to this. By changing the source gas and the reaction gas, it is possible to form a film such as SiO or Al. 2 O 3 In other words, the source gas may contain a gas containing Si element or a gas containing Al element, and the reaction gas may be a gas containing nitrogen or oxygen.

[0078] For example, a Si-containing gas containing any one of dichlorosilane, monochlorosilane, trisilylamine, and aminosilane-based gases is used as a source gas, and N 2 and N.H. 3 A silicon nitride film may be formed by ALD using a nitriding gas containing any one or both of the above.

[0079] In addition, the source gases include chlorosilane gas, aminosilane gas, and SiF 4 A Si-containing gas containing any one of the above is used, and H is used as the reaction gas. 2 O, O 2 and O 3 The silicon oxide film may be formed by ALD using an oxidizing gas containing one or more of the following: 3 Cl, SiH 2 Cl 2 , Si 2 Cl 6 , SiCl 4 , SiCl 2 (CH 3 ) 2Examples of aminosilane gases include BTBAS, 3DMAS, DSBAS, BDEAS, TEAS, TIPAS, DIPAS, and DSN-2.

[0080] In addition, an Al-containing gas such as trimethylaluminum (TMA) is used as the source gas, and H is used as the reaction gas. 2 O, O 2 and O 3 The aluminum oxide film may be formed by ALD using an oxidizing gas containing one or more of the above.

[0081] For any of the Si-element-containing gas, the Al-element-containing gas, the oxidizing gas, and the nitriding gas, one gas may be selected from each of them, or a combination of a plurality of gases may be used.

[0082] The substrate processing system 1 has been described above, but the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0083] G board 1. Substrate Processing System 2 Load lock chamber 3. Winding and unwinding chamber (substrate removal chamber) 4 Processing chamber 5 Drums 7 Plasma generating section 9. Control Unit 41 Main body 42 Drum Room 43 Raw gas adsorption chamber 44 Plasma Reaction Chamber 45 Purge Gas Chamber 46 Exhaust section 61 Raw gas supply section 62 Reactive gas supply section 63 Purge gas supply unit 70 Metal Window 71 Conductor Plate 72 Shower Plate 73 Rectangular coil antenna 74 High frequency power supply 75 cases 76 Gas Supply Room 77 Split metal window 78 Support frame 79 Insulating materials 701 Plane part 702 Planar area

Claims

1. A film formation apparatus for performing ALD film formation on a substrate, A rotating drum that holds the substrate on a holding side parallel to a rotation axis; a processing chamber having a main body that accommodates the rotating drum; The main body portion is A plurality of processing chambers each having an elongated processing space facing the holding side surface and extending in a direction parallel to the rotation axis; an exhaust unit disposed between each of the plurality of processing chambers; the plurality of processing chambers include at least a source gas adsorption chamber for adsorbing a source gas onto the substrate, and a plasma reaction chamber for generating plasma from a reaction gas that reacts with the source gas adsorbed onto the substrate; The plasma reaction chamber comprises: a long metal window facing the holding side and extending in a direction parallel to the longitudinal direction of the plasma reaction chamber; A vertically wound rectangular coil antenna, The metal window is a frame provided on an upper portion of a side wall of the plasma reaction chamber; a plurality of partition windows disposed within the frame of the frame body and linearly arranged at a first interval in the longitudinal direction of the metal window; a second gap between the frame body and one of the sides of the partition window that extends in the longitudinal direction of the metal window is wider than the first gap; the vertically wound rectangular coil antenna is disposed outside the plasma reaction chamber in a corresponding relationship to each of the partition windows, has a flat surface facing the partition windows, and is configured by winding an antenna wire around a winding axis that is parallel to the partition windows and perpendicular to a longitudinal direction of the metal window; The plurality of planar portions are configured to form a common planar area. Film deposition equipment.

2. The vertically wound rectangular coil antenna is disposed beyond both ends of the metal window in the longitudinal direction of the metal window. The film forming apparatus according to claim 1 .

3. The first interval is equal to or greater than 5 mm and equal to or less than 15 mm. The film forming apparatus according to claim 1 or 2.

4. The second interval is equal to or greater than 20 mm and equal to or less than 100 mm. The film forming apparatus according to claim 1 .

5. The second distance is equal to or greater than 40 mm and equal to or less than 80 mm. The film forming apparatus according to claim 4 .

6. a purge gas chamber is provided between the source gas adsorption chamber and the plasma reaction chamber to separate an atmosphere in the source gas adsorption chamber from an atmosphere in the plasma reaction chamber; The film forming apparatus according to claim 1 .

7. a substrate removal chamber is provided adjacent to the processing chamber in the direction of the rotation axis of the rotating drum; the rotating drum is movable between the processing chamber and the substrate removal chamber; The substrate is adsorbed to the rotating drum or desorbed from the rotating drum in the substrate desorption chamber. The film forming apparatus according to claim 1 .

8. a load lock chamber is provided adjacent to the substrate removal chamber in a direction perpendicular to the rotation axis of the rotating drum; The substrate is transferred between the load lock chamber and the substrate unloading chamber. The film forming apparatus according to claim 7 .

9. A method for performing ALD film formation on a substrate, comprising the steps of: a processing chamber including a rotating drum that holds the substrate on a holding side parallel to a rotation axis, a body that houses the rotating drum and faces the holding side, the body having at least a source gas adsorption chamber that adsorbs a source gas onto the substrate, and a plasma reaction chamber that generates plasma from a reaction gas that reacts with the source gas adsorbed onto the substrate, The plasma reaction chamber includes an elongated metal window facing the holding side and having a longitudinal direction parallel to a longitudinal direction of the plasma reaction chamber, and a vertically wound rectangular coil antenna; The metal window includes a plurality of divided windows arranged linearly in a longitudinal direction of the metal window, the vertically wound rectangular coil antennas are disposed outside the plasma reaction chamber in correspondence with the respective partition windows; A rotating step of rotating the rotary drum around the rotation axis; a plasma generating step of forming an induction electric field between the rectangular coil antenna and the metal window, and generating the plasma from the reaction gas by the induction electric field; an adsorption step of adsorbing the source gas onto the substrate; a plasma reaction step of reacting the source gas adsorbed on the substrate with the plasma to form a film after the adsorption step, repeating the adsorption step and the plasma reaction step until the film reaches a predetermined thickness. Film formation method.

10. the source gas contains a Si element-containing gas or an Al element-containing gas, The reaction gas is a gas containing nitrogen or oxygen. The film forming method according to claim 9 .

11. the source gas includes any one of dichlorosilane, monochlorosilane, trisilylamine, and aminosilane; The reaction gas is N ２ and N.H. ３ Including either one or both of the following: The film is a silicon nitride film. The film forming method according to claim 10.

12. The source gas includes any one of chlorosilane and aminosilane, The reaction gas is H ２ O, O ２ and O ３ Including one or more of the following: The film is a silicon oxide film. The film forming method according to claim 10.

13. The source gas contains trimethylaluminum, The reaction gas is H ２ O, O ２ and O ３ Including one or more of the following: The film is an aluminum oxide film. The film forming method according to claim 10.

14. The substrate is a glass substrate. The film forming method according to any one of claims 9 to 13.

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