Semiconductor Device

Abstract

To provide a semiconductor device suitable for suppressing peeling of a plurality of metal layers arranged over an electrode pad portion and an insulator.SOLUTION: Included are: a semiconductor element 2 that includes a first electrode 21 arranged on an element main surface 201; an insulator 3 that has an annular shape overlapping an outer peripheral edge of the first electrode 21 when viewed in a thickness direction z and is arranged so as to extend over the first electrode 21 and the element main surface 201; a first metal layer 41 arranged so as to extend over the first electrode 21 and the insulator 3; and a second metal layer 42 laminated on the first metal layer 41 and overlapping both the first electrode 21 and the insulator 3 when viewed in the thickness direction z. The first electrode 21 includes a first electrode pad 212 located inside an inner end edge 302 of the insulator 3 when viewed in the thickness direction z. A first end edge 412 of the first metal layer 41 is located between an outer end edge 301 and the inner end edge 302 of the insulator 3 when viewed in the thickness direction z. A second end edge 422 of the second metal layer 42 is located between the first end edge 412 and the inner end edge 302 when viewed in the thickness direction z.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] Various configurations have been proposed for semiconductor devices equipped with semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. In the semiconductor device disclosed in the document, the periphery of an electrode formed on the surface of a semiconductor element is covered with an insulating film (passivation film 5 and polyimide film 11). A portion of the electrode on the semiconductor element that is located inside the insulating film and exposed from the insulating film is defined as an electrode pad portion. A plurality of metal layers such as titanium (Ti), copper (Cu), and nickel (Ni) are laminated on the electrode pad. These metal layers are formed across the electrode pad and the insulating film.

[0003] Depending on the specifications of the semiconductor device and the environment in which it is used, stress and impact are generated in the multiple metal layers on the insulating film, which may cause cracks or peeling off of the metal layers. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2005-72253 A Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure has been devised in light of the above-mentioned circumstances, and has as its main objective the provision of a semiconductor device suitable for suppressing peeling of multiple metal layers arranged across an electrode pad portion and an insulating portion. [Means for solving the problem]

[0006] A semiconductor device provided by a first aspect of the present disclosure comprises a semiconductor element having an element body having an element main surface and an element back surface facing opposite each other in a thickness direction, and a first electrode arranged on the element main surface, an insulating portion having a ring shape overlapping with an outer peripheral edge of the first electrode when viewed in the thickness direction and arranged across the first electrode and the element main surface, a first metal layer arranged across the first electrode and the insulating portion, and a second metal layer stacked on the first metal layer and overlapping both the first electrode and the insulating portion when viewed in the thickness direction, wherein the first electrode has a first electrode pad portion located inside an inner edge of the insulating portion when viewed in the thickness direction, a first edge which is the outer peripheral edge of the first metal layer is located between the outer edge and the inner edge of the insulating portion when viewed in the thickness direction, and a second edge which is the outer peripheral edge of the second metal layer is located between the first edge and the inner edge when viewed in the thickness direction.

[0007] A method for manufacturing a semiconductor device provided by a second aspect of the present disclosure includes the steps of: for a semiconductor element having an element body having an element main surface facing one side in a thickness direction and a first electrode disposed on the element main surface, arranging an insulating portion on the first electrode and across the element main surface; forming a first metal layer material on the first electrode and on the insulating portion; forming a second metal layer material on the first metal layer material; forming a third metal layer material on the second metal layer material; and forming a resist on the third metal layer material having an opening that overlaps with a portion of the insulating portion when viewed in the thickness direction. the first etching step of wet etching the third metal layer material using the resist as a mask; the second etching step of wet etching the second metal layer material using the resist as a mask; the third etching step of wet etching the first metal layer material using the resist as a mask; the fourth etching step of wet etching the second metal layer material using the resist as a mask; the fifth etching step of wet etching the third metal layer material using the resist as a mask; and the fifth etching step of removing the resist. Effect of the Invention

[0008] According to the semiconductor device of the present disclosure, peeling of the metal layer disposed across the electrode pad portion and the insulating portion can be suppressed.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0010] [Figure 1] 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] 2 is a bottom view of the semiconductor device shown in FIG. 1. [Diagram 3] 2 is a plan view (through a sealing resin) of the semiconductor device shown in FIG. 1. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] FIG. 4 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 4 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 2 is a plan view of a semiconductor element. [Figure 8] FIG. 8 is an enlarged cross-sectional view taken along line VIII-VIII in FIG. 7. [Figure 9] FIG. 9 is an enlarged view of part A in FIG. 8. [Figure 10] FIG. 9 is an enlarged view of part B in FIG. 8. [Figure 11] 2 is a plan view showing a process of the example of the manufacturing method of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 12] FIG. 12 is an enlarged cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 12 is a plan view showing a step following FIG. [Figure 14] FIG. 14 is an enlarged cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 14 is a plan view showing a step following FIG. 13. [Figure 16] FIG. 16 is an enlarged cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 16 is an enlarged view of part A in FIG. [Figure 18] FIG. 16 is an enlarged view of part B in FIG. [Figure 19] FIG. 16 is a plan view showing a step following FIG. [Figure 20] 20 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. 19. [Figure 21] FIG. 21 is a partially enlarged cross-sectional view showing a step subsequent to FIG. 20. [Figure 22] FIG. 22 is a partially enlarged cross-sectional view showing a step following that shown in FIG. [Diagram 23] FIG. 23 is a partially enlarged cross-sectional view showing a step following that shown in FIG. [Figure 24] FIG. 24 is a partially enlarged cross-sectional view showing a step subsequent to FIG. 23. [Diagram 25] FIG. 25 is a partially enlarged cross-sectional view showing a step following FIG. 24. [Figure 26] FIG. 26 is a partially enlarged cross-sectional view showing a step subsequent to FIG. 25. [Figure 27] FIG. 27 is a partially enlarged cross-sectional view showing a step subsequent to FIG. 26. [Figure 28] FIG. 28 is a partially enlarged cross-sectional view showing a step subsequent to FIG. 27. [Figure 29] FIG. 29 is a partially enlarged cross-sectional view showing a step subsequent to FIG. 28. [Diagram 30] 9 is a cross-sectional view similar to FIG. 8, showing a semiconductor device according to a first modified example of the first embodiment. [Diagram 31] 9 is a cross-sectional view similar to FIG. 8, showing a semiconductor device according to a second modified example of the first embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0012] The terms "first," "second," "third," etc. in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0013] In this disclosure, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B in contact with a certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B". In addition, unless otherwise specified, "an object A overlaps with an object B when viewed in a certain direction" includes "an object A overlaps with the entirety of an object B" and "an object A overlaps with a part of an object B."

[0014] First Embodiment 1 to 10, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a first lead 1A, a second lead 1B, a third lead 1C, a semiconductor element 2, an insulating portion 3, a metal laminate portion 4, a conductive member 5, a first conductive bonding material 61, a second conductive bonding material 62, a third conductive bonding material 63, and a sealing resin 7.

[0015] FIG. 1 is a plan view showing the semiconductor device A10. FIG. 2 is a bottom view showing the semiconductor device A10. FIG. 3 is a plan view showing the semiconductor device A10. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. FIG. 5 is a cross-sectional view taken along line VV in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a plan view showing a semiconductor element. FIG. 8 is an enlarged cross-sectional view taken along line VIII-VIII in FIG. 7. FIG. 9 is an enlarged view of part A in FIG. 8. FIG. 10 is an enlarged view of part B in FIG. 8. For ease of understanding, FIG. 3 is seen through the sealing resin 7. In FIG. 7, the metal laminated portion 4 is seen through.

[0016] In the description of the semiconductor device A10, the thickness direction of the semiconductor element 2 is called the "thickness direction z". The direction perpendicular to the thickness direction z is called the "first direction x". The direction perpendicular to both the thickness direction z and the first direction x is called the "second direction y". As shown in FIG. 1 and FIG. 2, the semiconductor device A10 is substantially rectangular when viewed in the thickness direction z. Also, in the description of the semiconductor device A10, for convenience, the right side in FIG. 1 is called "one side of the first direction x" and the left side in FIG. 1 is called "the other side of the first direction x". In FIG. 1, the upper side is called "one side of the second direction y" and the lower side is called "the other side of the second direction y". In FIG. 4, the upper side is called "one side of the thickness direction z" and the lower side is called "the other side of the thickness direction z". The size of the semiconductor device A10 is not particularly limited, and in this embodiment, for example, the dimension in the first direction x is 2.6 mm to 3.6 mm, the dimension in the second direction y is 2.6 mm to 3.6 mm, and the dimension in the thickness direction z is 0.5 mm to 1.0 mm.

[0017] The first lead 1A, the second lead 1B, and the third lead 1C are formed, for example, by punching or bending a metal plate. The first lead 1A, the second lead 1B, and the third lead 1C are made of, for example, copper (Cu) or nickel (Ni), or an alloy thereof. The first lead 1A, the second lead 1B, and the third lead 1C have a thickness of, for example, 0.1 mm to 0.3 mm.

[0018] As shown in Fig. 3, the first lead 1A is arranged to be spaced apart from the second lead 1B and the third lead 1C in the second direction y. The second lead 1B and the third lead 1C are aligned in the first direction x. The first lead 1A, the second lead 1B and the third lead 1C are arranged to be spaced apart from each other when viewed in the thickness direction z. The size when viewed in the thickness direction z is the largest for the first lead 1A and the smallest for the third lead 1C.

[0019] As shown in FIGS. 3 to 6, the first lead 1A has an element bonding portion 11 and a plurality of (four in this embodiment) terminal-like extending portions 12. The element bonding portion 11 is, for example, rectangular when viewed in the thickness direction z. The element bonding portion 11 has an element mounting surface 111 and a back surface mounting portion 112. The element mounting surface 111 faces one side in the thickness direction z, and the back surface mounting portion 112 faces the opposite side (the other side in the thickness direction z) to the element mounting surface 111. A semiconductor element 2 is mounted on the element mounting surface 111. As shown in FIGS. 2 and 4, the back surface mounting portion 112 is exposed from the sealing resin 7. The back surface mounting portion 112 is a portion to be joined by a joining material such as solder when mounting the semiconductor device A10 on a circuit board (not shown).

[0020] As shown in FIG. 3 and FIG. 4, the second lead 1B has a bonding portion 13, a plurality of (three in this embodiment) terminal portions 14, and a plurality of (three in this embodiment) bent portions 15. The bonding portion 13 is located on one side of the thickness direction z (upper side in FIG. 4) with respect to the plurality of terminal portions 14. The bonding portion 13 is located inward in the second direction y with respect to the plurality of terminal portions 14. Each of the plurality of terminal portions 14 has a back surface mounting portion 141. The back surface mounting portion 141 faces the other side of the thickness direction z (lower side in FIG. 4). The back surface mounting portion 141 is exposed from the sealing resin 7. The back surface mounting portion 141 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The plurality of bent portions 15 connect the bonding portion 13 and the plurality of terminal portions 14 separately, and are bent when viewed in the first direction x.

[0021] As shown in FIG. 3 and FIG. 5, the third lead 1C has a wire bonding portion 16, a terminal portion 17, and a bent portion 18. The wire bonding portion 16 is located on one side of the terminal portion 17 in the thickness direction z (upper side in FIG. 5). The wire bonding portion 16 is located inward in the second direction y with respect to the terminal portion 17. The terminal portion 17 has a back surface mounting portion 171. The back surface mounting portion 171 faces the other side of the thickness direction z (lower side in FIG. 5). The back surface mounting portion 171 is exposed from the sealing resin 7. The back surface mounting portion 171 is a portion that is bonded by a bonding material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The bent portion 18 connects the wire bonding portion 16 and the terminal portion 17, and has a bent shape when viewed in the first direction x.

[0022] The semiconductor element 2 is an element that exerts the electrical function of the semiconductor device A10. The type of the semiconductor element 2 is not particularly limited, and in this embodiment, the semiconductor element 2 is configured as a transistor. As shown in Figures 3 to 5, the semiconductor element 2 has an element body 20, a first electrode 21, a second electrode 22, and a third electrode 23.

[0023] The element body 20 has a rectangular shape when viewed in the thickness direction z. The element body 20 has an element main surface 201 and an element back surface 202. The element main surface 201 and the element back surface 202 face opposite each other in the thickness direction z. The element main surface 201 faces the same side as the element mounting surface 111 of the element bonding portion 11 in the thickness direction z. Therefore, the element back surface 202 faces the element mounting surface 111.

[0024] The first electrode 21 and the third electrode 23 are disposed on a main surface 201 of the element. The second electrode 22 is disposed on a rear surface 202 of the element. The first electrode 21, the second electrode 22, and the third electrode 23 are made of a material such as copper or aluminum (Al), or an alloy thereof. In this embodiment, the first electrode 21 is a source electrode, the second electrode 22 is a drain electrode, and the third electrode 23 is a gate electrode.

[0025] In this embodiment, the first electrode 21 covers most of the element principal surface 201. Specifically, the first electrode 21 is disposed in a region of the rectangular element principal surface 201 excluding the periphery and one corner (the lower right corner in FIG. 3). The first electrode 21 has a first electrode pad portion 212. The first electrode pad portion 212 is located inside the insulating portion 3 as viewed in the thickness direction z. The third electrode 23 is disposed in one corner of the element principal surface 201 (the lower right corner in FIG. 3). The second electrode 22 covers substantially the entire element back surface 202.

[0026] The second electrode 22 is electrically joined to the element mounting surface 111 (element bonding portion 11) via a second conductive bonding material 62. The second conductive bonding material 62 electrically connects the element bonding portion 11 and the second electrode 22. The second conductive bonding material 62 is, for example, solder.

[0027] The semiconductor device A10 includes a wire 65. The wire 65 is electrically connected to the third electrode 23 and the wire bonding portion 16 of the third lead 1C. The wire 65 electrically connects the third electrode 23 and the third lead 1C.

[0028] 7 and 8, the insulating portion 3 is disposed across the first electrode 21 and the element principal surface 201. The insulating portion 3 has an annular shape overlapping with the outer peripheral edge of the first electrode 21 as viewed in the thickness direction z. The outer edge 301 of the insulating portion 3 is located near the outer peripheral edge of the element principal surface 201 as viewed in the thickness direction z. In the first electrode 21, a region located inside the inner edge 302 of the insulating portion 3 as viewed in the thickness direction z is defined as a first electrode pad portion 212.

[0029] In this embodiment, the insulating section 3 is made up of a first insulating layer 31 and a second insulating layer 33. The first insulating layer 31 is disposed across the peripheral edge portion 211 of the first electrode 21 and the element main surface 201. In FIG. 7, the region where the first insulating layer 31 is formed is shaded. The first insulating layer 31 is made of, for example, a nitride, for example, SiN. The thickness of the first insulating layer 31 is, for example, 0.1 μm to 2 μm. The constituent material of the first insulating layer 31 may be SiON or SiO2 Other insulating materials may also be used.

[0030] The first insulating layer 31 includes a first annular portion 310. The first annular portion 310 has an annular shape corresponding to the outer circumferential edge of the first electrode 21. In this embodiment, the first annular portion 310 is made up of a plurality of strip-shaped portions each extending with a substantially constant width in the first direction x or the second direction y. In this embodiment, the first annular portion 310 has outer edges 311, 312, 313, 314, 315, and 316 and inner edges 321, 322, 323, 324, 325, and 326.

[0031] The outer edge 311 is located on one side of the first annular portion 310 in the second direction y and extends in the first direction x. The outer edge 312 is located on one side of the first annular portion 310 in the first direction x and extends in the second direction y. One side end of the outer edge 312 in the second direction y is connected to one side end of the outer edge 311 in the first direction x. The outer edge 313 is located on the other side of the first annular portion 310 in the first direction x and extends in the second direction y. One side end of the outer edge 313 in the second direction y is connected to the other side end of the outer edge 311 in the first direction x. The outer edge 314 is located on the other side of the first annular portion 310 in the second direction y and extends in the first direction x. The other side end of the outer edge 314 in the first direction x is connected to the other side end of the outer edge 313 in the second direction y. The outer edges 311 and 314 correspond to a "first outer edge" in this disclosure. The outer edges 312 and 313 correspond to a "second outer edge" in this disclosure.

[0032] The inner edge 321 is located on one side of the first annular portion 310 in the second direction y and extends in the second direction y. The inner edge 321 corresponds to the outer edge 311 and is located inside the outer edge 311 in the second direction y as viewed in the thickness direction z. The inner edge 322 is located on one side of the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the inner edge 322 in the second direction y is connected to one side end of the inner edge 321 in the first direction x. The inner edge 322 corresponds to the outer edge 312 and is located inside the outer edge 312 in the first direction x as viewed in the thickness direction z. The inner edge 323 is located on the other side of the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the inner edge 323 in the second direction y is connected to the other side end of the inner edge 321 in the first direction x. The inner edge 323 corresponds to the outer edge 313, and is located inside the outer edge 313 in the first direction x as viewed in the thickness direction z. The inner edge 324 is located on the other side of the first annular portion 310 in the second direction y and extends in the first direction x. The other side end of the inner edge 324 in the first direction x is connected to the other side end of the inner edge 323 in the second direction y. The inner edge 324 corresponds to the outer edge 314, and is located inside the outer edge 314 in the second direction y as viewed in the thickness direction z. The inner edge 321 and the inner edge 324 correspond to the "first inner edge" in this disclosure. The inner edge 322 and the inner edge 323 correspond to the "second inner edge" in this disclosure.

[0033] The inner edge 325 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the first direction x. One side end of the inner edge 325 in the first direction x is connected to the other side end of the inner edge 322 in the second direction y. The inner edge 325 is located inside the inner edge 322 in the first direction x as viewed in the thickness direction z. The inner edge 326 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the second direction y. The other side end of the inner edge 326 in the second direction y is connected to the other side end of the inner edge 325 in the first direction x. The inner edge 326 is located on the opposite side of the inner edge 321 from the inner edge 325 in the second direction y as viewed in the thickness direction z. In this embodiment, the inner edge 326 is also connected to the inner edge 324. The inner edge 325 corresponds to the "fifth inner edge" in this disclosure. The inner edge 326 corresponds to the "sixth inner edge" in this disclosure.

[0034] The outer edge 315 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the first direction x. One side end of the outer edge 315 in the first direction x is connected to the other side end of the outer edge 312 in the second direction y. The outer edge 315 corresponds to the inner edge 325, and is located outside the inner edge 325 in the second direction y as viewed in the thickness direction z. The outer edge 316 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the second direction y. The other side end of the outer edge 316 in the second direction y is connected to the other side end of the outer edge 315 in the first direction x. The outer edge 316 corresponds to the inner edge 326, and is located outside the inner edge 326 in the first direction x as viewed in the thickness direction z. In this embodiment, outer edge 316 is also connected to outer edge 314. Outer edge 315 corresponds to the "fifth outer edge" in this disclosure. Outer edge 316 corresponds to the "sixth outer edge" in this disclosure.

[0035] 7 and 8, the second insulating layer 33 is laminated on the first insulating layer 31. In this embodiment, the second insulating layer 33 covers the entire first insulating layer 31, and each of the first electrode 21 and the element main surface 201. In this embodiment, the second insulating layer 33 shown in FIG. 8 includes an outer edge 301 and an inner edge 302 of the insulating portion 3.

[0036] The constituent material of the second insulating layer 33 is not particularly limited, and in this embodiment, the second insulating layer 33 is made of, for example, a resin material, such as a polyimide resin. The thickness of the second insulating layer 33 is greater than the thickness of the first insulating layer 31. The thickness of the second insulating layer 33 is preferably 5 to 50 times the thickness of the first insulating layer 31. The thickness of the second insulating layer 33 is, for example, 5 μm to 10 μm.

[0037] 7, the second insulating layer 33 includes a second annular portion 330. The second annular portion 330 has an annular shape corresponding to the first annular portion 310, and covers the entire first annular portion 310. In this embodiment, the second annular portion 330 is made up of a plurality of strip-shaped portions each extending approximately in the first direction x or the second direction y. In this embodiment, the second annular portion 330 has outer edges 331, 332, 333, 334, 335, and 336 and inner edges 341, 342, 343, 344, 345, and 346.

[0038] The outer edge 331 is located on one side in the second direction y of the second annular portion 330 and extends in the first direction x. The outer edge 331 is located outward of the outer edge 311 in the second direction y when viewed in the thickness direction z.

[0039] The outer edge 332 is located on one side of the second annular portion 330 in the first direction x and extends in the second direction y. One end of the outer edge 332 in the second direction y is connected to one end of the outer edge 331 in the first direction x. The outer edge 332 is located outside the outer edge 312 in the first direction x when viewed in the thickness direction z.

[0040] As shown in FIG. 9, in this embodiment, the outer edge 331 includes an outer edge first portion 331A and an outer edge overhang portion 331E. The outer edge first portion 331A extends linearly along the first direction x and occupies most of the outer edge 331 except for the end portion. The outer edge overhang portion 331E is connected to the outer edge first portion 331A and is located at an end portion closer to the outer edge 332. The outer edge overhang portion 331E is located outside the outer edge first portion 331A in the second direction y. Therefore, the outer edge 331 has an end portion (outer edge overhang portion 331E) closer to the outer edge 332 overhanging outward in the second direction y compared to the center (outer edge first portion 331A) in the first direction x.

[0041] The outer edge 332 includes an outer edge first portion 332A and an outer edge overhang portion 332E. The outer edge first portion 332A extends linearly along the second direction y and occupies most of the outer edge 332 except for the end portion. The outer edge overhang portion 332E is connected to the outer edge first portion 332A and is located at the end portion closer to the outer edge 331. The outer edge overhang portion 332E is located outside the outer edge first portion 332A in the first direction x. Therefore, the outer edge 332 has an end portion (outer edge overhang portion 332E) closer to the outer edge 331 than the center (outer edge first portion 332A) in the second direction y, which overhangs outward in the first direction x. The outer edge overhang portion 332E is also connected to the outer edge overhang portion 331E. 9, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y indicates the boundary between the outer edge overhanging portion 331E and the outer edge overhanging portion 332E. As a result, the corners of the outer edge 331 and the outer edge 332 (the outer edge overhanging portion 331E and the outer edge overhanging portion 332E) have a shape that overhangs outward in both the first direction x and the second direction y.

[0042] 7, the outer edge 333 is located on the other side of the second annular portion 330 in the first direction x and extends in the second direction y. One side end of the outer edge 313 in the second direction y is connected to the other side end of the outer edge 311 in the first direction x. The outer edge 333 is located outside the outer edge 313 in the first direction x when viewed in the thickness direction z.

[0043] Although detailed illustrations will be omitted, the end of the outer edge 333 closer to the outer edge 331 than the center in the second direction y protrudes outward in the first direction x. As a result, the corners of the outer edges 331 and 333 (the upper left corners in FIG. 7) protrude outward in both the first direction x and the second direction y, similar to the corners of the outer edges 331 and 332.

[0044] The outer edge 334 is located on the other side of the second annular portion 330 in the second direction y, and extends in the first direction x. The other end of the outer edge 334 in the first direction x is connected to the other end of the outer edge 333 in the second direction y. The outer edge 334 is located outward of the outer edge 314 in the second direction y when viewed in the thickness direction z.

[0045] Although detailed illustrations are omitted, the outer edge 334 has an end closer to the outer edge 333 than the center in the first direction x and protrudes outward in the second direction y. Also, the outer edge 333 has an end closer to the outer edge 334 than the center in the second direction y and protrudes outward in the first direction x. The end of the outer edge 334 closer to the outer edge 333 is connected to the end of the outer edge 333 closer to the outer edge 334. As a result, the corners of the outer edges 333 and 334 (the lower left corners in FIG. 7) are shaped to protrude outward in both the first direction x and the second direction y, similar to the corners of the outer edges 331 and 332. The outer edges 331 and 334 correspond to the "third outer edge" of this disclosure. The outer edges 332 and 333 correspond to the "fourth outer edge" of this disclosure.

[0046] The inner edge 341 is located on one side of the second direction y in the second annular portion 330 and extends in the second direction y. The inner edge 341 is located inside the inner edge 321 in the second direction y when viewed in the thickness direction z. The inner edge 342 is located on one side of the first direction x in the second annular portion 330 and extends in the second direction y. One side end of the inner edge 342 in the second direction y is connected to one side end of the inner edge 341 in the first direction x. The inner edge 342 is located inside the inner edge 322 in the first direction x when viewed in the thickness direction z. The inner edge 343 is located on the other side of the first direction x in the second annular portion 330 and extends in the second direction y. One side end of the inner edge 343 in the second direction y is connected to the other side end of the inner edge 341 in the first direction x. The inner edge 343 is located inside the inner edge 323 in the first direction x as viewed in the thickness direction z. The inner edge 344 is located on the other side of the second annular portion 330 in the second direction y and extends in the first direction x. The other end of the inner edge 344 in the first direction x is connected to the other end of the inner edge 343 in the second direction y. The inner edge 344 is located inside the inner edge 324 in the second direction y as viewed in the thickness direction z. The inner edges 341 and 344 correspond to the "third inner edge" of the present disclosure. The inner edges 342 and 343 correspond to the "fourth inner edge" of the present disclosure.

[0047] The inner edge 345 is located in the second annular portion 330 toward one side in the first direction x and toward the other side in the second direction y, and extends in the first direction x. One side end of the inner edge 345 in the first direction x is connected to the other side end of the inner edge 342 in the second direction y. The inner edge 325 is located inside the inner edge 325 in the second direction y when viewed in the thickness direction z. The inner edge 346 is located in the second annular portion 330 toward one side in the first direction x and toward the other side in the second direction y, and extends in the second direction y. The other side end of the inner edge 346 in the second direction y is connected to the other side end of the inner edge 345 in the first direction x. The inner edge 346 is located inside the inner edge 326 in the first direction x when viewed in the thickness direction z. In addition, in this embodiment, the inner edge 346 is also connected to the inner edge 344.

[0048] As shown in FIG. 10, in this embodiment, the inner edge 345 includes an inner edge first portion 345A and an inner edge overhang portion 345E. The inner edge first portion 345A extends linearly along the first direction x and occupies most of the inner edge 345 except for the end portion. The inner edge overhang portion 345E is connected to the inner edge first portion 345A and is located at an end portion closer to the inner edge 346. The inner edge overhang portion 345E is located inside the inner edge overhang portion 345E in the second direction y. Therefore, the end portion (inner edge overhang portion 345E) closer to the inner edge 346 overhangs inward in the second direction y compared to the center (inner edge first portion 345A) in the first direction x.

[0049] The inner edge 346 includes an inner edge first portion 346A and an inner edge overhang portion 346E. The inner edge first portion 346A extends linearly along the second direction y and occupies most of the inner edge 346 except for the end portion. The inner edge overhang portion 346E is connected to the inner edge first portion 346A and is located at the end portion closer to the inner edge 345. The inner edge overhang portion 346E is located inside the inner edge first portion 346A in the first direction x. Therefore, the end portion (inner edge overhang portion 346E) closer to the inner edge 345 overhangs inward in the first direction x compared to the center (inner edge first portion 346A) in the second direction y. The inner edge overhang portion 346E is also connected to the inner edge overhang portion 345E. In Fig. 10, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between the inner edge overhang 345E and the inner edge overhang 346E. As a result, the corners of the inner edge 345 and the inner edge 346 (the inner edge overhang 345E and the inner edge overhang 346E) are shaped to overhang inward in both the first direction x and the second direction y. The inner edge 345 corresponds to the "seventh inner edge" in this disclosure. The inner edge 346 corresponds to the "eighth inner edge" in this disclosure.

[0050] As shown in FIG. 7, the outer edge 335 is located toward one side in the first direction x and toward the other side in the second direction y in the second annular portion 330, and extends in the first direction x. One side end of the outer edge 335 in the first direction x is connected to the other side end of the outer edge 332 in the second direction y. The outer edge 335 is located outside the outer edge 315 in the second direction y when viewed in the thickness direction z. The outer edge 336 is located toward one side in the first direction x and toward the other side in the second direction y in the second annular portion 330, and extends in the second direction y. The other side end of the outer edge 336 in the second direction y is connected to the other side end of the outer edge 335 in the first direction x. The outer edge 336 is located outside the outer edge 316 in the first direction x when viewed in the thickness direction z. In this embodiment, outer edge 336 is also connected to outer edge 334. Outer edge 335 corresponds to the "seventh outer edge" in this disclosure. Outer edge 336 corresponds to the "eighth outer edge" in this disclosure.

[0051] 7 and 8, the metal laminate section 4 is disposed across the first electrode 21 and the insulating section 3, and has a structure in which a plurality of metal layers are laminated. In this embodiment, the metal laminate section 4 includes a first metal layer 41, a second metal layer 42, and a third metal layer 43.

[0052] The first metal layer 41 is disposed across the first electrode 21 and the insulating section 3 (second insulating layer 33). Specifically, the first metal layer 41 covers the first electrode pad portion 212 of the first electrode 21 located inside the inner edge 302 of the insulating section 3 (second insulating layer 33) as viewed in the thickness direction z, and a part of the second insulating layer 33 (second annular portion 330). The first metal layer 41 has a first extension portion 411 located at the outer periphery as viewed in the thickness direction z. A first edge 412, which is the outer periphery of the first metal layer 41, is located between the outer edge 301 and the inner edge 302 of the insulating section 3 (second insulating layer 33) as viewed in the thickness direction z. The constituent material of the first metal layer 41 includes titanium (Ti). The thickness of the first metal layer 41 is, for example, 0.1 μm to 0.5 μm.

[0053] The second metal layer 42 is laminated on the first metal layer 41. The second metal layer 42 overlaps both the first electrode 21 and the insulating portion 3 when viewed in the thickness direction z. The second metal layer 42 covers an area located inside the first extending portion 411, except for the outer periphery (first extending portion 411) of the first metal layer 41 when viewed in the thickness direction z. As a result, the first extending portion 411 of the first metal layer 41 is not covered by the second metal layer 42 and is exposed from the second metal layer 42. The second metal layer 42 has a second extending portion 421 located at the outer periphery when viewed in the thickness direction z. A second edge 422, which is the outer periphery of the second metal layer 42, is located between the first edge 412 of the first metal layer 41 and the inner edge 302 of the insulating portion 3 (second insulating layer 33) when viewed in the thickness direction z. The constituent material of the second metal layer 42 includes nickel. The second metal layer 42 has a thickness of, for example, 0.1 μm to 0.5 μm.

[0054] The third metal layer 43 is laminated on the second metal layer 42. The third metal layer 43 overlaps both the first electrode 21 and the insulating portion 3 when viewed in the thickness direction z. The third metal layer 43 covers an area located inside the second extending portion 421, except for the outer periphery (second extending portion 421) of the second metal layer 42 when viewed in the thickness direction z. As a result, the second extending portion 421 of the second metal layer 42 is not covered by the third metal layer 43 and is exposed from the third metal layer 43. The third edge 431, which is the outer periphery of the third metal layer 43, is located between the second edge 422 of the second metal layer 42 and the inner edge 302 of the insulating portion 3 (second insulating layer 33) when viewed in the thickness direction z. The constituent material of the second metal layer 42 includes silver (Ag). The thickness of the third metal layer 43 is greater than both the thickness of the first metal layer 41 and the thickness of the second metal layer 42. The third metal layer 43 has a thickness of, for example, 0.5 μm to 1.5 μm.

[0055] As can be understood from FIG. 8 and the above description, the second edge 422 of the second metal layer 42 is located closer to the inner edge 302 of the insulating part 3 (second insulating layer 33) than the first edge 412 of the first metal layer 41. The third edge 431 of the third metal layer 43 is located closer to the inner edge 302 than the second edge 422 of the second metal layer 42. As a result, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are stacked in a stepped manner. In the configuration shown in FIG. 8, the first dimension L1, which is the distance between the first edge 412 and the second edge 422 in the thickness direction z, is, for example, 10 to 50 times the thickness of the first metal layer 41. The second dimension L2, which is the distance between the second edge 422 and the third edge 431 in the thickness direction z, is, for example, 10 to 50 times the thickness of the second metal layer 42. A third dimension L3, which is the distance between the third edge 431 and the inner edge 302 as viewed in the thickness direction z, is, for example, 1 to 5 times the thickness of the third metal layer 43.

[0056] As shown in FIGS. 3 and 4, the conductive member 5 is joined to the first electrode 21 of the semiconductor element 2 and the second lead 1B. The conductive member 5 is made of a metal plate material. The metal is copper or a copper alloy. The conductive member 5 is a metal plate material that has been subjected to a punching process or a bending process. In this embodiment, the conductive member 5 has an element-side bonding portion 51, a lead-side bonding portion 52, and an intermediate portion 53. As shown in FIG. 4, the element-side bonding portion 51, the lead-side bonding portion 52, and the intermediate portion 53 are appropriately bent and connected when viewed in the first direction x.

[0057] The element-side joint portion 51 is joined to the first electrode pad portion 212 of the first electrode 21 via a first conductive bonding material 61. The first conductive bonding material 61 conductively bonds the element-side joint portion 51 (conductive member 5) and the first electrode pad portion 212. The first conductive bonding material 61 is, for example, solder.

[0058] As shown in FIGS. 4 to 6, the element-side bonding portion 51 has a protrusion 511 and a recess 512. The protrusion 511 protrudes downward (to the other side in the thickness direction z) from the lower surface (the surface facing the element principal surface 201) of the element-side bonding portion 51. In the illustrated example, two protrusions 511 are provided at an interval in the second direction y, and each protrusion 511 extends in the first direction x with a constant width. The recess 512 is a portion that is partially recessed upward (to one side in the thickness direction z) from the lower surface of the element-side bonding portion 51. In the illustrated example, two recesses 512 are provided at an interval in the first direction x, and each recess 512 extends in the second direction y with a constant width.

[0059] When the first electrode pad portion 212 and the element-side bonding portion 51 are bonded to each other, the protruding portion 511 is pressed against the first electrode pad portion 212, and a sufficient amount of the first conductive bonding material 61 is present around the protruding portion 511. This allows the electrical continuity between the element-side bonding portion 51 and the first electrode pad portion 212 to be properly maintained. In addition, a recess 512 is provided on the lower surface of the element-side bonding portion 51. This allows the voids (air gaps) to be accommodated in the recess 512 even if they exist in the first conductive bonding material 61. Therefore, the voids in the first conductive bonding material 61 can be suppressed. Instead of the recess 512 shown in the figure, a through hole penetrating the element-side bonding portion 51 in the thickness direction z may be formed in order to suppress the voids.

[0060] The lead-side joint 52 is joined to the bonding portion 13 of the second lead 1B via a third conductive bonding material 63. The third conductive bonding material 63 conductively bonds the lead-side joint 52 (conductive member 5) and the bonding portion 13 (second lead 1B). The third conductive bonding material 63 is, for example, solder. As shown in FIG. 4, the lead-side joint 52 has a convex portion located on the other side (lower side in the figure) in the thickness direction z from the surrounding area. When the bonding portion 13 and the lead-side joint 52 are joined, the convex portion is pressed against the bonding portion 13, and a sufficient amount of the third conductive bonding material 63 is present around the convex portion. This allows the conduction between the lead-side joint 52 and the bonding portion 13 to be properly maintained.

[0061] The intermediate portion 53 is located between the element-side joint portion 51 and the lead-side joint portion 52 in the second direction y. The intermediate portion 53 is connected to both the element-side joint portion 51 and the lead-side joint portion 52.

[0062] The sealing resin 7 covers parts of the first lead 1A, the second lead 1B, and the third lead 1C, the semiconductor element 2, the insulating portion 3, the metal laminate portion 4, the conductive member 5, and the wire 65. The sealing resin 7 is made of, for example, a black epoxy resin.

[0063] 1, 2, 4, and 6, the sealing resin 7 has a sealing resin main surface 71, a sealing resin rear surface 72, and a sealing resin side surface 73. The sealing resin main surface 71 and the sealing resin rear surface 72 face opposite sides in the thickness direction z. The sealing resin main surface 71 faces the same side as the element main surface 201 and the element mounting surface 111. The sealing resin rear surface 72 faces the same side as the element rear surface 202 and the rear surface mounting portion 112. The sealing resin side surface 73 is connected to the sealing resin main surface 71 and the sealing resin rear surface 72, and is slightly inclined with respect to the thickness direction z.

[0064] Next, an example of a method for manufacturing the semiconductor device A10 will be described below with reference to Figures 11 to 29. Figures 12, 14, 16, and 20 to 29 are cross-sectional views showing a step of the method for manufacturing the semiconductor device A10, and are cross-sectional views similar to the partially enlarged cross-sectional view shown in Figure 8.

[0065] First, as shown in FIG. 11, a substrate 2' is prepared. The substrate 2' has a base material 20', a first electrode 21, and a third electrode 23. The base material 20' is a member that becomes the element body 20 of the semiconductor element 2. In this embodiment, the base material 20' is sized so that it can be divided into a plurality of element bodies 20 (semiconductor elements 2) by cutting the base material 20' (substrate 2') in a later process. The plan views in FIG. 11 and subsequent figures show an area corresponding to one element body 20 (semiconductor element 2) to be divided. The base material 20' has a main surface 201'. The main surface 201' faces one side in the thickness direction z. The first electrode 21 and the third electrode 23 are arranged on the main surface 201'. Although not shown, a plurality of first electrodes 21 and a plurality of third electrodes 23 are arranged on the main surface 201' at intervals in the first direction x and the second direction y, respectively. In the plan views of FIG. 11 and subsequent figures, the region corresponding to the element principal surface 201 of one element body 20 (semiconductor element 2) to be divided is shown as principal surface 201'. This step corresponds to the "step of preparing a substrate" in this disclosure. Note that unlike the example shown in FIG. 11, the case in which a semiconductor element 2 having a single element body 20 corresponding to base material 20' is prepared as substrate 2' also corresponds to the "step of preparing a substrate" in this disclosure.

[0066] Next, as shown in FIG. 13, a first insulating layer 31 is formed on the main surface 201' side of the substrate 2'. The first insulating layer 31 can be formed by a thin film forming technique such as CVD (chemical vapor deposition). In forming the first insulating layer 31, for example, a mask having an opening corresponding to the first annular portion 310 is placed on the substrate 2' to form a thin film made of SiN, and then the mask is removed. Thereby, the first insulating layer 31 including the first annular portion 310 is formed. Here, the first annular portion 310 is disposed across the peripheral portion 211 of the first electrode 21 and the main surface 201'. The first annular portion 310 has outer edges 311, 312, 313, 314, 315, 316 and inner edges 321, 322, 323, 324, 325, 326 similar to the configuration described with reference to FIG. 7.

[0067] Next, as shown in FIG. 15, a second insulating layer 33 is formed on the main surface 201' side of the substrate 2'. The second insulating layer 33 can be formed by, for example, disposing polyamic acid (resin material) by coating and heating. In forming the second insulating layer 33, first, for example, a mask having an opening corresponding to the second annular portion 330 is disposed on the substrate 2', polyamic acid (resin material) is applied, and then the mask is removed. Thereby, the second annular portion 330 made of a resin material is disposed. The second annular portion 330 overlaps with the first annular portion 310 when viewed in the thickness direction z. Here, the second annular portion 330 has outer edges 331, 332, 333, 334, 335, 336 and inner edges 341, 342, 343, 344, 345, 346. The second annular portion 330 has a configuration similar to that described with reference to FIG. 7. On the other hand, the second annular portion 330 shown in FIG. 15 differs from the configuration shown in FIG. 7 in the shape of the corners of outer edges 331 and 332 (upper right corner in FIG. 15), the shape of the corners of outer edges 331 and 333 (upper left corner in FIG. 15), the shape of the corners of outer edges 333 and 334 (lower left corner in FIG. 15), and the shape of the corners of inner edges 345 and 346.

[0068] As shown in FIG. 17, the outer edge 331 includes a first outer edge portion 331A and a second outer edge portion 331B. The second outer edge portion 331B is connected to the first outer edge portion 331A and is located at an end portion closer to the outer edge 332. The second outer edge portion 331B is located outside the first outer edge portion 331A in the second direction y. In the illustrated example, the second outer edge portion 331B has an outer edge straight portion 331c and an outer edge connecting portion 331d. The outer edge straight portion 331c extends linearly along the first direction x. The outer edge connecting portion 331d is connected to both the first outer edge portion 331A and the outer edge straight portion 331c. Therefore, with respect to the outer edge 311 of the first annular portion 310 and the outer edge 331 of the second annular portion 330, the distance (first distance D1) between the outer edge 311 and the outer edge 331 in the second direction y is larger at the end closer to the outer edge 332 than at the center in the first direction x. The first distance D1 is not particularly limited, and in this embodiment, for example, the first distance D1 at the center in the first direction x (the distance in the second direction y between the outer edge 311 and the outer edge first portion 331A) is about 10 μm to 20 μm, and the first distance D1 at the end closer to the outer edge 332 (the distance in the second direction y between the outer edge 311 and the outer edge straight portion 331c) is about 15 μm to 35 μm.

[0069] The outer edge 332 includes an outer edge first portion 332A and an outer edge second portion 332B. The outer edge second portion 332B is connected to both the outer edge first portion 332A and the outer edge straight portion 331c (the outer edge second portion 331B) and is located at the end closer to the outer edge 331. The outer edge second portion 332B is located outside the outer edge first portion 332A in the first direction x. In the illustrated example, the outer edge second portion 332B has an outer edge straight portion 332c and an outer edge connecting portion 332d. The outer edge straight portion 332c extends linearly along the second direction y. The outer edge connecting portion 332d is connected to both the outer edge first portion 332A and the outer edge straight portion 332c. Therefore, with respect to the outer edge 312 of the first annular portion 310 and the outer edge 332 of the second annular portion 330, the distance between the outer edge 312 and the outer edge 332 in the first direction x (second distance D2) is greater at the end closer to the outer edge 331 than at the center in the second direction y. The second distance D2 is not particularly limited, and in this embodiment, for example, the second distance D2 at the center in the second direction y (the distance in the first direction x between the outer edge 312 and the outer edge first portion 332A) is about 10 μm to 20 μm, and the second distance D2 at the end closer to the outer edge 331 (the distance in the first direction x between the outer edge 312 and the outer edge straight portion 332c) is about 15 μm to 35 μm.

[0070] The outer edge second portion 332B is also connected to the outer edge second portion 331B. As a result, the corners of the outer edges 331 and 332 (the outer edge second portions 331B and 332B) are shaped to protrude outward in both the first direction x and the second direction y. The corners of the outer edges 331 and 332 (the outer edge second portions 331B and 332B) shown in FIG. 17 protrude outward further than the corners of the outer edges 331 and 332 (the outer edge overhanging portions 331E and 332E) shown in FIG. 9.

[0071] Although detailed illustrations are omitted, the end of the outer edge 331 closer to the outer edge 333 is located outward in the second direction y, similar to the end of the outer edge 331 closer to the outer edge 332 (second outer edge portion 331B). Also, the end of the outer edge 333 closer to the outer edge 331 is located outward in the first direction x, similar to the end of the outer edge 332 closer to the outer edge 331 (second outer edge portion 332B). As a result, the corners of the outer edges 331 and 333 (the upper left corners in FIG. 15) are shaped to protrude outward in both the first direction x and the second direction y, similar to the corners of the outer edges 331 and 332.

[0072] Although detailed illustrations are omitted, the end of the outer edge 334 closer to the outer edge 333 is located outward in the second direction y, similar to the end of the outer edge 331 closer to the outer edge 332 (second outer edge portion 331B). Also, the end of the outer edge 333 closer to the outer edge 334 is located outward in the first direction x, similar to the end of the outer edge 332 closer to the outer edge 331 (second outer edge portion 332B). As a result, the corners of the outer edges 333 and 334 (the lower left corners in FIG. 15) are shaped to protrude outward in both the first direction x and the second direction y, similar to the corners of the outer edges 331 and 332.

[0073] As shown in FIG. 18, the inner edge 345 includes an inner edge first portion 345A and an inner edge second portion 345B. The inner edge second portion 345B is connected to the inner edge first portion 345A and is located at the end portion closer to the inner edge 346. The inner edge second portion 345B is located inside the inner edge first portion 345A in the second direction y. In the illustrated example, the inner edge second portion 345B has an inner edge straight portion 345c and an inner edge connecting portion 345d. The inner edge straight portion 345c extends linearly along the first direction x. The inner edge connecting portion 345d is connected to both the inner edge first portion 345A and the inner edge straight portion 345c. Therefore, with respect to the inner edge 325 of the first annular portion 310 and the inner edge 345 of the second annular portion 330, the distance between the inner edge 325 and the inner edge 345 in the second direction y (third distance D3) is greater at the end closer to the inner edge 346 than at the center in the first direction x. The third distance D3 is not particularly limited, and in this embodiment, for example, the third distance D3 at the center in the first direction x (the distance between the inner edge 325 and the inner edge first portion 345A in the second direction y) is about 20 μm to 30 μm, and the third distance D3 at the end closer to the inner edge 346 (the distance between the inner edge 325 and the inner edge straight portion 345c in the second direction y) is about 30 μm to 50 μm.

[0074] The inner edge 346 includes an inner edge first portion 346A and an inner edge second portion 346B. The inner edge second portion 346B is connected to both the inner edge first portion 346A and the inner edge straight portion 345c (inner edge second portion 345B) and is located at the end portion closer to the inner edge 345. The inner edge second portion 346B is located inside the inner edge first portion 346A in the first direction x. In the illustrated example, the inner edge second portion 346B has an inner edge straight portion 346c and an inner edge connecting portion 346d. The inner edge straight portion 346c extends linearly along the second direction y. The inner edge connecting portion 346d is connected to both the inner edge first portion 346A and the inner edge straight portion 346c. Therefore, with respect to the inner edge 326 of the first annular portion 310 and the inner edge 346 of the second annular portion 330, the distance between the inner edge 326 and the inner edge 346 in the first direction x (fourth distance D4) is greater at the end closer to the inner edge 345 than at the center in the second direction y. The fourth distance D4 is not particularly limited, and in this embodiment, for example, the fourth distance D4 at the center in the second direction y (the distance between the inner edge 326 and the inner edge first portion 346A in the first direction x) is about 20 μm to 30 μm, and the fourth distance D4 at the end closer to the inner edge 345 (the distance between the inner edge 326 and the inner edge straight portion 346c in the first direction x) is about 30 μm to 50 μm.

[0075] The inner edge second portion 346B is also connected to the inner edge second portion 345B. As a result, the corners of the inner edge 3435 and the inner edge 346 (the inner edge second portion 345B and the inner edge second portion 346B) are shaped to protrude inward in both the first direction x and the second direction y. The corners of the inner edge 345 and the inner edge 346 shown in Fig. 18 (the inner edge second portion 345B and the inner edge second portion 346B) protrude inward further than the corners of the inner edge 345 and the inner edge 346 shown in Fig. 10 (the inner edge protruding portion 345E and the inner edge protruding portion 346E).

[0076] FIG. 19 shows the second annular portion 330 after heat treatment. Here, the second annular portion 330 (second insulating layer 33) made of polyimide resin is formed. The second annular portion 330 after the heat treatment shrinks compared to the second annular portion 330 before the heat treatment shown in FIG. 15. The shrinkage of the resin material portion is remarkable at the corners of the outer edge 331 and the outer edge 332, and the corners of the inner edge 345 and the inner edge 346, etc. As shown in FIG. 19, the outer edge overhanging portion 331E and the outer edge overhanging portion 332E are formed at the corners of the outer edge 331 and the outer edge 332, and the inner edge overhanging portion 345E and the inner edge overhanging portion 346E are formed at the corners of the inner edge 345 and the inner edge 346. In this way, the insulating portion 3 including the first insulating layer 31 and the second insulating layer 33 is formed.

[0077] Next, as shown in Fig. 20, a first metal layer material 41' is formed. The first metal layer material 41' is formed at least on the insulating portion 3 and the first electrode 21. The first metal layer material 41' is a metal layer formed by a thin film formation technique such as sputtering. The first metal layer material 41' is, for example, a Ti layer.

[0078] Next, as shown in FIG. 21, a second metal layer material 42' is formed. The second metal layer material 42' is formed on the first metal layer material 41'. The second metal layer material 42' is a metal layer formed by a thin film formation technique such as sputtering. The second metal layer material 42' is made of a metal material different from the first metal layer material 41', and is, for example, a Ni layer.

[0079] Next, as shown in FIG. 22, a third metal layer material 43' is formed. The third metal layer material 43' is formed on the second metal layer material 42'. The third metal layer material 43' is a metal layer formed by a thin film formation technique such as sputtering. The third metal layer material 43' is made of a metal material different from both the first metal layer material 41' and the second metal layer material 42', and is, for example, an Ag layer.

[0080] Next, as shown in FIG. 23, a resist 8 is formed. The resist 8 can be formed by exposure and development using, for example, photolithography. In forming the resist 8, a photosensitive material is applied onto the third metal layer material 43', and the photosensitive material is exposed to light in a predetermined pattern and developed. This forms the resist 8 having an opening 81. The opening 81 overlaps a part of the insulating part 3 (the part on the outer edge 301 side) when viewed in the thickness direction z. Here, since the second insulating layer 33 is relatively thick, the thickness of the resist 8 formed across the first electrode pad part 212 and the second insulating layer 33 is made large so that a large step does not occur in the resist 8. In addition, in order to properly form the opening 81 in the thick resist 8, preferably, the amount of exposure to the photosensitive material is set to be at least twice as much as usual, and development is performed multiple times.

[0081] Next, as shown in FIG. 24, a part of the third metal layer material 43' is removed. Specifically, the third metal layer material 43' is wet etched using the resist 8 as a mask (first etching step). The wet etching process of the third metal layer material 43' is performed using a chemical solution that dissolves the third metal layer material 43'. As a result, as shown in FIG. 24, in the third metal layer material 43', a part of the part exposed from the resist 8 and a part of the part covered with the resist 8 are removed, and an edge 431' is formed.

[0082] Next, as shown in FIG. 25, a portion of the second metal layer material 42' is removed. Specifically, the second metal layer material 42' is wet etched using the resist 8 as a mask (second etching step). The wet etching process of the second metal layer material 42' is performed using a chemical solution that dissolves the second metal layer material 42'. As a result, as shown in FIG. 25, in the second metal layer material 42', a portion exposed from the third metal layer material 43' and a portion of a portion covered with the third metal layer material 43' are removed to form an edge 421'.

[0083] Next, as shown in FIG. 26, a part of the first metal layer material 41' is removed. Specifically, the first metal layer material 41' is wet etched using the resist 8 as a mask (third etching step). The wet etching process of the first metal layer material 41' is performed using a chemical solution that dissolves the first metal layer material 41'. As a result, as shown in FIG. 26, a part of the part of the first metal layer material 41' exposed from the second metal layer material 42' and a part of the part covered with the second metal layer material 42' are removed, and a first metal layer 41 having a first edge 412 is formed.

[0084] Next, as shown in FIG. 27, a part of the second metal layer material 42' is removed. Specifically, the second metal layer material 42' is wet etched using the resist 8 as a mask (fourth etching step). The wet etching process of the second metal layer material 42' is performed using a chemical solution that dissolves the second metal layer material 42'. As a result, as shown in FIG. 27, the part of the second metal layer material 42' exposed from the first metal layer 41 and part of the part covered with the first metal layer 41 are removed, and the second metal layer 42 having the second edge 422 is formed.

[0085] Next, as shown in FIG. 28, a part of the third metal layer material 43' is removed. Specifically, the third metal layer material 43' is wet-etched using the resist 8 as a mask (fifth etching step). The wet etching process of the third metal layer material 43' is performed using a chemical solution that dissolves the third metal layer material 43'. As a result, as shown in FIG. 28, a part of the third metal layer material 43' exposed from the second metal layer 42 and a part of the part covered with the second metal layer 42 are removed, and the third metal layer 43 having the third edge 431 is formed. In this way, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are formed, which are stacked in a stepped shape. Note that the positions of the first edge 412, the second edge 422, and the third edge 431 (the positions of the first edge 412, the second edge 422, and the third edge 431 in the first direction x in FIG. 28) can be adjusted by changing the etching conditions in each etching step. Next, the resist 8 is removed as shown in FIG.

[0086] Thereafter, the base material 20' (substrate 2') is cut along a plane perpendicular to the first direction x and a plane perpendicular to the second direction y, and divided into a plurality of semiconductor elements 2. Next, a lead frame having a shape including a first lead 1A, a second lead 1B, and a third lead 1C is prepared, and the semiconductor element 2, the conductive member 5, and the wire 65 are bonded to the lead frame. Next, the sealing resin 7 is formed by molding. Next, the lead frame is appropriately cut to separate the first lead 1A, the second lead 1B, and the third lead 1C from one another. Through the above steps, the semiconductor device A10 shown in FIGS. 1 to 10 is manufactured.

[0087] Next, the effects of this embodiment will be described.

[0088] The semiconductor device A10 includes a semiconductor element 2, an insulating section 3, a first metal layer 41, and a second metal layer 42. The insulating section 3 is disposed across the first electrode 21 and the element main surface 201 of the semiconductor element 2. The first metal layer 41 is disposed on the first electrode 21 (first electrode pad section 212) and the insulating section 3, and the second metal layer 42 is laminated on the first metal layer 41. The outer peripheral edge (first edge 412) of the first metal layer 41 is located between the outer edge 301 and the inner edge 302 of the insulating section 3 when viewed in the thickness direction z, and the outer peripheral edge (second edge 422) of the second metal layer 42 is located between the first edge 412 and the inner edge 302 when viewed in the thickness direction z. According to this configuration, the first metal layer 41 and the second metal layer 42 are stacked in a stepped manner on the first electrode pad portion 212 and the insulating portion 3, so that peeling of the first metal layer 41 and the second metal layer 42 can be suppressed.

[0089] The semiconductor device A10 includes a third metal layer 43. The third metal layer 43 is laminated on the second metal layer 42. The outer peripheral edge (third edge 431) of the third metal layer 43 is located between the second edge 422 and the inner edge 302 when viewed in the thickness direction z. With this configuration, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are laminated in a stepped manner on the first electrode pad portion 212 and the insulating portion 3, so that peeling of the first metal layer 41, the second metal layer 42, and the third metal layer 43 can be suppressed.

[0090] The insulating section 3 includes a first insulating layer 31 and a second insulating layer 33. The first insulating layer 31 is disposed across the first electrode 21 and the element main surface 201. The second insulating layer 33 is laminated on the first insulating layer 31. With this configuration, the insulating section 3 (the first insulating layer 31 and the second insulating layer 33) can have different characteristics according to the properties of each insulating layer.

[0091] The second insulating layer 33 is thicker than the first insulating layer 31. With this configuration, the mechanical properties of the insulating section 3 including the second insulating layer 33 are improved. As a preferred example, the thickness of the second insulating layer 33 is 5 to 50 times the thickness of the first insulating layer 31. Moreover, the second insulating layer 33 is made of polyimide resin. With this configuration, the mechanical properties of the insulating section 3 are further improved. This makes the semiconductor device A10 suitable for mounting in, for example, equipment in which relatively large vibrations may occur (for example, automotive equipment).

[0092] The second insulating layer 33 covers the entire first insulating layer 31, and each of the first electrode 21 and the element main surface 201. With this configuration, the mechanical properties of the insulating part 3 are improved, and the first insulating layer 31 can be appropriately protected by the second insulating layer 33.

[0093] The thickness of the third metal layer 43 is greater than both the thickness of the first metal layer 41 and the thickness of the second metal layer 42. With this configuration, the mechanical properties of the third metal layer 43 can be improved. Furthermore, when the conductive member 5 is bonded onto the first electrode pad portion 212, the impact at the time of bonding can be mitigated. The constituent material of the third metal layer 43 contains silver. With this configuration, the third metal layer 43 has excellent thermal conductivity. As a result, heat generated in the semiconductor element 2 can be efficiently released to the conductive member 5 side via the third metal layer 43.

[0094] <First Modification of First Embodiment> Fig. 30 shows a semiconductor device according to a first modified example of the first embodiment. Fig. 30 is a cross-sectional view similar to Fig. 8 shown in the above embodiment. In the drawings from Fig. 30 onwards, elements that are the same as or similar to the semiconductor device A10 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted as appropriate.

[0095] In the semiconductor device A11 of this modification, the configuration of the insulating portion 3 is different from that of the semiconductor device A10 of the above embodiment. In this modification, the second insulating layer 33 does not cover the entire first insulating layer 31. Both ends in the width direction (left and right direction in FIG. 30) of the strip portion constituting the first insulating layer 31 are exposed from the second insulating layer 33. In the semiconductor device A11 of this modification, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are also stacked in a stepped manner on the first electrode pad portion 212 and the insulating portion 3, so that peeling of the first metal layer 41, the second metal layer 42, and the third metal layer 43 can be suppressed. In addition, within the same range of configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.

[0096] <Second Modification of First Embodiment> FIG. 31 shows a semiconductor device according to a second modification of the first embodiment. FIG. 31 is a cross-sectional view similar to FIG. 8 shown in the above embodiment. In the semiconductor device A12 of this modification, the configuration of the insulating section 3 is different from that of the semiconductor device A10 of the above embodiment. In this modification, the insulating section 3 does not include the second insulating layer 33, and includes only the first insulating layer 31. In the semiconductor device A12 of this modification, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are also stacked in a stepped shape on the first electrode pad portion 212 and the insulating section 3, so that peeling of the first metal layer 41, the second metal layer 42, and the third metal layer 43 can be suppressed. In addition, within the same range of configuration as the semiconductor device A10 of the above embodiment, the same action and effect as the above embodiment is achieved.

[0097] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.

[0098] The present disclosure includes configurations related to the following notes.

[0099] [Appendix 1] a semiconductor element having an element body having an element main surface and an element back surface facing in opposite directions in a thickness direction, and a first electrode disposed on the element main surface; an insulating portion that is annular and overlaps an outer periphery of the first electrode when viewed in the thickness direction, and that is disposed across the first electrode and the main surface of the element; a first metal layer disposed across the first electrode and the insulating portion; a second metal layer that is laminated on the first metal layer and overlaps both the first electrode and the insulating portion when viewed in the thickness direction; the first electrode has a first electrode pad portion located inside an inner edge of the insulating portion as viewed in the thickness direction, a first edge, which is an outer peripheral edge of the first metal layer, is located between an outer edge and an inner edge of the insulating portion when viewed in the thickness direction; A semiconductor device, wherein a second edge, which is an outer peripheral edge of the second metal layer, is located between the first edge and the inner edge when viewed in the thickness direction. [Appendix 2] a third metal layer that is laminated on the second metal layer and overlaps both the first electrode and the insulating portion when viewed in the thickness direction; The semiconductor device of claim 1, wherein a third edge, which is an outer peripheral edge of the third metal layer, is located between the second edge and the inner edge when viewed in the thickness direction. [Appendix 3] 3. The semiconductor device described in claim 2, wherein the insulating portion includes a first insulating layer arranged across the first electrode and the element main surface, and a second insulating layer stacked on the first insulating layer. [Appendix 4] 4. The semiconductor device according to claim 3, wherein the second insulating layer has a thickness greater than a thickness of the first insulating layer. [Appendix 5] 5. The semiconductor device according to claim 4, wherein the second insulating layer has a thickness that is 5 to 50 times that of the first insulating layer. [Appendix 6] 6. The semiconductor device according to claim 3, wherein the second insulating layer is made of a polyimide resin. [Appendix 7] 7. The semiconductor device according to claim 3, wherein the second insulating layer covers the entire first insulating layer, and each of the first electrode and the element main surface. [Appendix 8] 8. The semiconductor device according to claim 2, wherein the third metal layer has a thickness greater than both the first metal layer and the second metal layer. [Appendix 9] 9. The semiconductor device according to claim 2, wherein a constituent material of the third metal layer contains silver. [Appendix 10] 10. The semiconductor device according to any one of claims 2 to 9, wherein a first dimension, which is the distance between the first edge and the second edge when viewed in the thickness direction, is 10 to 50 times the thickness of the first metal layer. [Appendix 11] The semiconductor device according to any one of claims 2 to 10, wherein a second dimension, which is the distance between the second edge and the third edge when viewed in the thickness direction, is 10 to 50 times the thickness of the second metal layer. [Appendix 12] 8. The semiconductor device according to claim 7, wherein a third dimension, which is a distance between the third edge and the inner edge as viewed in the thickness direction, is 1 to 5 times a thickness of the third metal layer. [Appendix 13] A conductive member formed of a metal plate material; 13. The semiconductor device according to claim 1, further comprising: a first conductive bonding material that conductively bonds the first electrode pad portion and the conductive member. [Appendix 14] the semiconductor element has a second electrode disposed on a rear surface of the element; a first lead made of a metal plate and having an element bonding portion on which the semiconductor element is mounted; The semiconductor device according to claim 13, further comprising: a second conductive bonding material that conductively bonds the element bonding portion and the second electrode. [Appendix 15] a second lead made of a metal plate and spaced apart from the first lead in a thickness direction; The semiconductor device according to claim 14, further comprising: a third conductive bonding material that conductively bonds the second lead and the conductive member. [Appendix 16] the semiconductor element has a third electrode disposed on the element main surface; a third lead made of a metal plate and spaced apart from the first lead and the second lead when viewed in a thickness direction; and a wire that electrically connects the third electrode and the third lead. [Appendix 17] 17. The semiconductor device according to claim 16, wherein the first electrode is a source electrode, the second electrode is a drain electrode, and the third electrode is a gate electrode. [Appendix 18] a step of arranging an insulating part across an element body having an element main surface facing one side in a thickness direction and a first electrode arranged on the element main surface, the insulating part being arranged across the first electrode and the element main surface; forming a first metal layer material over the first electrode and over the insulating portion; forming a second metal layer material over the first metal layer material; forming a third metal layer material over the second metal layer material; forming a resist having an opening overlapping a portion of the insulating portion when viewed in the thickness direction on the third metal layer material; a first etching step of wet-etching the third metal layer material using the resist as a mask; a second etching step of wet etching the second metal layer material using the resist as a mask; a third etching step of wet etching the first metal layer material using the resist as a mask; a fourth etching step of wet etching the second metal layer material using the resist as a mask; a fifth etching step of wet etching the third metal layer material using the resist as a mask; and removing the resist. [Explanation of symbols]

[0100] A10, A11, A12: Semiconductor device 10: Substrate 11: 1st metal layer 1A: 1st lead 1B: 2nd lead 1C: 3rd lead 11: Element bonding section 111: Element mounting surface 112: Back mounting part 12:Terminal-shaped extension part 13: Bonding section 14:Terminal section 141: Back mounting part 15: Bend 16: Wire bonding section 17:Terminal section 171: Back mounting part 18: Bend 2: Semiconductor elements 2': Substrate 20: Element body 20': Base material 201: Element main surface 201': Main surface 202: Back side of element 21: 1st electrode 211: Periphery 212: First electrode pad portion 22: 2nd electrode 23:Third electrode 3: Insulation section 301: Outer edge 302: Inner edge 31: First insulating layer 310: First annular section 311: Outer edge (first outer edge) 312: Outer edge (second outer edge) 313: Outer edge (second outer edge) 314: Outer edge (first outer edge) 315: Outer edge (5th outer edge) 316: Outer edge (6th outer edge) 321: Inner edge (first inner edge) 322: Inner edge (second inner edge) 323: Inner edge (third inner edge) 324: Inner edge (first inner edge) 325: Inner edge (5th inner edge) 326: Inner edge (6th inner edge) 33: Second insulating layer 330: Second annular section 331: Outer edge (third outer edge) 331A: Outer edge 1st part (3rd outer edge 1st part) 331B: Outer edge 2nd part (3rd outer edge 2nd part) 331c: Outer edge straight part (3rd outer edge straight part) 331d: Outer edge connection portion (third outer edge connection portion) 331E:Outer edge overhang 332: Outer edge (4th outer edge) 332A: Outer edge 1st part (4th outer edge 1st part) 332B: Outer edge 2nd part (4th outer edge 2nd part) 332c: Outer edge straight part (4th outer edge straight part) 332d: Outer edge connection portion (fourth outer edge connection portion) 332E:Outer edge overhang 333: Outer edge (4th outer edge) 334: Outer edge (third outer edge) 335: Outer edge (7th outer edge) 336: Outer edge (8th outer edge) 341: Inner edge (third inner edge) 342: Inner edge (fourth inner edge) 343: Inner edge (fourth inner edge) 344: Inner edge (third inner edge) 345: Inner edge (7th inner edge) 345A: Inner edge part 1 (7th inner edge part 1) 345B: Inner edge 2nd part (7th inner edge 2nd part) 345c: Inner edge straight part (7th inner edge straight part) 345d: Inner edge connection part (7th inner edge connection part) 345E: Inner edge overhang 346: Inner edge (8th inner edge) 346A: Inner edge 1st part (8th inner edge 1st part) 346B: Inner edge 2nd part (8th inner edge 2nd part) 346c: Inner edge straight part (8th inner edge straight part) 346d: Inner edge connection part (8th inner edge connection part) 346E: Inner edge overhang 4: Metal laminated section 41: 1st metal layer 41': 1st metal layer material 411: 1st extension part 412: First edge 42: 2nd metal layer 42': 2nd metal layer material 421:Second extension part 422: Second edge 43:Third metal layer 43': Third metal layer material 431: Third edge 5: Conductive material 51: Element side joint 511:Protrusion 512: Recess 52: Lead side joint 53: Middle section 61: First conductive adhesive material 62: Second conductive adhesive 63: Third conductive adhesive 65: Wire 7: Sealing resin 71: Main surface of sealing resin 72: Sealing resin back side 73: Sealing resin side 8: Resist 81 :Aperture D1: First distance D2: 2nd distance D3: Third distance D4: 4th distance L1: First dimension L2: Second dimension L3: Third dimension x :1st direction y : second direction z: thickness direction

Claims

1. a semiconductor element having an element body having an element main surface and an element back surface facing in opposite directions in a thickness direction, and a first electrode disposed on the element main surface; an insulating portion having an annular shape overlapping an outer periphery of the first electrode when viewed in the thickness direction and disposed across the first electrode and the main surface of the element; a first metal layer disposed across the first electrode and the insulating portion; a second metal layer that is laminated on the first metal layer and overlaps both the first electrode and the insulating portion when viewed in the thickness direction; the insulating portion is configured as a band-shaped portion having an inner edge and an outer edge, and has an annular shape corresponding to the outer circumferential edge of the first electrode, the first electrode has a first electrode pad portion located inside the inner edge of the insulating portion as viewed in the thickness direction, a first edge, which is an outer peripheral edge of the first metal layer, is located between the outer edge and the inner edge of the insulating portion when viewed in the thickness direction; A semiconductor device, wherein a second edge, which is an outer peripheral edge of the second metal layer, is located between the first edge and the inner edge when viewed in the thickness direction.

2. Further comprising a sealing resin for covering the semiconductor element, The semiconductor device according to claim 1 , wherein a portion of said element main surface is exposed from said first electrode and said insulating portion and is in contact with said sealing resin.

3. a third metal layer that is laminated on the second metal layer and overlaps both the first electrode and the insulating portion when viewed in the thickness direction; The semiconductor device according to claim 1 , wherein a third edge which is an outer periphery of said third metal layer is located between said second edge and said inner edge when viewed in said thickness direction.

4. 4. The semiconductor device according to claim 3, wherein the insulating portion includes a first insulating layer disposed across the first electrode and the element main surface, and a second insulating layer laminated on the first insulating layer.

5. 5. The semiconductor device according to claim 4, wherein the second insulating layer has a thickness greater than a thickness of the first insulating layer.

6. 6. The semiconductor device according to claim 5, wherein the second insulating layer has a thickness that is 5 to 50 times the thickness of the first insulating layer.

7. 7. The semiconductor device according to claim 4, wherein said second insulating layer is made of a polyimide resin.

8. 8. The semiconductor device according to claim 4, wherein the second insulating layer covers the entire first insulating layer, and each of the first electrode and the element main surface is partially covered.

9. 9. The semiconductor device according to claim 3, wherein the third metal layer has a thickness greater than both of the first metal layer and the second metal layer.

10. 10. The semiconductor device according to claim 3, wherein a constituent material of said third metal layer contains silver.

11. 11. The semiconductor device according to claim 3, wherein a first dimension, which is the distance between the first edge and the second edge when viewed in the thickness direction, is 10 to 50 times the thickness of the first metal layer.

12. A semiconductor device according to any one of claims 3 to 11, wherein a second dimension, which is the distance between the second edge and the third edge when viewed in the thickness direction, is 10 to 50 times the thickness of the second metal layer.

13. 9. The semiconductor device according to claim 8, wherein a third dimension, which is a distance between the third edge and the inner edge as viewed in the thickness direction, is 1 to 5 times the thickness of the third metal layer.

14. A conductive member formed of a metal plate material; The semiconductor device according to claim 1 , further comprising a first conductive bonding material that conductively bonds said first electrode pad portion and said conductive member.

15. the semiconductor element has a second electrode disposed on a rear surface of the element; a first lead made of a metal plate and having an element bonding portion on which the semiconductor element is mounted; The semiconductor device according to claim 14 , further comprising: a second conductive bonding material that electrically connects the element bonding portion and the second electrode.

16. a second lead made of a metal plate and spaced apart from the first lead in a thickness direction; The semiconductor device according to claim 15 , further comprising: a third conductive bonding material that conductively bonds the second lead and the conductive member.

17. the semiconductor element has a third electrode disposed on the element main surface; a third lead made of a metal plate and spaced apart from the first lead and the second lead when viewed in a thickness direction; The semiconductor device according to claim 16 , further comprising: a wire electrically connecting said third electrode and said third lead.

18. 18. The semiconductor device according to claim 17, wherein the first electrode is a source electrode, the second electrode is a drain electrode, and the third electrode is a gate electrode.

Images