Substrate Processing Equipment

Abstract

The present invention relates to a substrate processing apparatus including a chamber, a substrate support portion for supporting one or more substrates within the chamber, an upper electrode disposed above the substrate support portion and facing the substrate support portion, and a lower electrode disposed below the upper electrode and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which a first RF power having a first frequency is applied, and a second electrode to which a second RF power having a second frequency different from the first frequency is applied.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for performing processing steps such as a deposition step and an etching step on a substrate. [Background technology]

[0002] Generally, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes such as a deposition process for depositing a thin film of a specific material on the substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film at the selectively exposed portions to form a pattern are performed. Such substrate processing processes are performed by a substrate processing apparatus.

[0003] A conventional substrate processing apparatus includes a substrate support unit that supports a substrate and a gas injection unit that injects gas toward the substrate support unit, and performs a processing process on the substrate by injecting gas while RF power having a preset frequency is applied to the gas injection unit.

[0004] Here, when a substrate processing apparatus according to the prior art performs a processing process on the substrate only when RF power having a high frequency is applied to the gas injection unit, there is a problem that while the step coverage of the thin film deposited on the substrate is improved, the density of the thin film deposited on the substrate is reduced.

[0005] Meanwhile, when a substrate processing apparatus according to the prior art performs a processing process on the substrate only when RF power having a low frequency is applied to the gas injection section, there is a problem that the density of the thin film deposited on the substrate increases while the step coverage of the thin film deposited on the substrate decreases.

[0006] As described above, the conventional substrate processing apparatus has a problem in that it is difficult to improve the quality of the substrate after the above processing steps have been completed. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention has been proposed to solve the above problems, and aims to provide a substrate processing apparatus capable of improving the quality of substrates after a processing process has been completed. [Means for solving the problem]

[0008] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0009] The substrate processing apparatus according to the present invention may include a chamber, a substrate support for supporting one or more substrates in the chamber, an upper electrode disposed above the substrate support to face the substrate support, and a lower electrode disposed below the upper electrode and spaced apart from the upper electrode. The upper electrode may inject a first gas through a first gas passage and inject a second gas through a second gas passage spatially separated from the first gas passage. The lower electrode may include a first electrode to which a first RF power having a first frequency is applied, and a second electrode to which a second RF power having a second frequency different from the first frequency is applied.

[0010] The substrate processing apparatus according to the present invention may include a chamber, a substrate support for supporting one or more substrates in the chamber, a gas injection unit arranged above the substrate support to face the substrate support, and a power application unit for applying RF power. The gas injection unit may include an upper electrode having a first gas flow path and a second gas flow path spatially separated from each other, and a lower electrode arranged between the upper electrode and the substrate support. The lower electrode may include a first electrode and a second electrode arranged below the upper electrode. The power application unit may include a first application mechanism connected to the first electrode to be able to apply a first RF power having a first frequency to the first electrode, and a second application mechanism connected to the second electrode to be able to apply a second RF power having a second frequency different from the first frequency to the second electrode. Effect of the Invention

[0011] According to the present invention, the following effects can be obtained.

[0012] The present invention is embodied in such a way that a processing process can be performed on a substrate using RF powers having different frequencies, thereby improving the quality of the substrate after the processing process is completed.

[0013] The present invention is embodied to reduce stress acting on a substrate during a processing process, thereby reducing warpage of the substrate after the processing process is completed, thereby further improving the quality of the substrate after the processing process is completed. [Brief description of the drawings]

[0014] [Figure 1] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Diagram 2] 5 is a schematic side cross-sectional view for explaining an embodiment of a gas injection unit in the substrate processing apparatus according to the present invention. FIG. [Diagram 3]5 is a schematic side cross-sectional view for explaining an embodiment of a gas injection unit in the substrate processing apparatus according to the present invention. FIG. [Figure 4] 2 is a schematic exploded perspective view of an upper electrode and a lower electrode in the substrate processing apparatus according to the present invention; [Diagram 5] 5 is a schematic cross-sectional side view of an upper electrode and a lower electrode taken along line II in FIG. 4. [Figure 6] 5 is a schematic cross-sectional side view of an upper electrode and a lower electrode taken along line II in FIG. 4. [Figure 7] 2 is a schematic plan view of a substrate support in the substrate processing apparatus according to the present invention; [Figure 8] 5 is a schematic side cross-sectional view of the upper electrode and the lower electrode taken along line II-II in FIG. 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings, in which: Figures 1 to 3 are schematic cross-sectional side views taken along line II in Figure 4. FIG.

[0016] 1 and 2, a substrate processing apparatus 1 according to the present invention performs a processing process on a substrate (S). The substrate (S) may be a glass substrate, a silicon substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform a deposition process for depositing a thin film on the substrate (S), an etching process for removing a part of the thin film deposited on the substrate (S), etc. Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process will be described as an example, but it will be obvious to a person skilled in the art to which the present invention belongs that an embodiment in which the substrate processing apparatus 1 according to the present invention performs a different processing process in addition to the etching process, etc. can be derived from this.

[0017] The substrate processing apparatus 1 according to the present invention may include a chamber 2 , a substrate support 3 , and a gas injection unit 4 .

[0018] <Chamber> Referring to FIG. 1, a chamber 2 provides a processing space 100. In the processing space 100, processing processes such as a deposition process and an etching process can be performed on the substrate (S). The processing space 100 can be disposed inside the chamber 2. The chamber 2 can be coupled with an exhaust port (not shown) for exhausting gas from the processing space 100. The substrate support unit 3 and the gas injection unit 4 can be installed in the chamber 2.

[0019] <Substrate support part> Referring to FIG. 1, the substrate support 3 supports the substrate (S). The substrate support 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported on the substrate support 3, a processing process can be performed on the multiple substrates (S) at once. The substrate support 3 can be coupled to the chamber 2. The substrate support 3 can be disposed inside the chamber 2.

[0020] <Gas injection section> Referring to FIG. 1, the gas injection unit 4 injects gas toward the substrate support 3. The gas injection unit 4 may be connected to a gas supply unit 40. Thus, the gas injection unit 4 may inject the gas supplied from the gas supply unit 40 toward the substrate support 3. The gas injection unit 4 may be coupled to the chamber 2. The gas injection unit 4 may be disposed facing the substrate support 3. The processing space 100 may be disposed between the gas injection unit 4 and the substrate support 3. The gas injection unit 4 may be coupled to a lead. The lead is coupled to the chamber 2 so as to cover an upper portion of the chamber 2.

[0021] The gas injection unit 4 may include a first gas passage 41 and a second gas passage .

[0022] The first gas passage 41 is for injecting a first gas. One side of the first gas passage 41 may be connected to the gas supply unit 40 via a pipe, a hose, etc. The other side of the first gas passage 41 may be in communication with the processing space 100. Thus, the first gas supplied from the gas supply unit 40 may flow along the first gas passage 41 and then be injected into the processing space 100 through the first gas passage 41. The first gas passage 41 may function as a passage through which the first gas flows and also as an injection port for injecting the first gas into the processing space 100.

[0023] The second gas passage 42 is for injecting a second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. One side of the second gas passage 42 may be connected to the gas supply unit 40 via a pipe, a hose, or the like. The other side of the second gas passage 42 may be connected to the processing space 100. Thus, the second gas supplied from the gas supply unit 40 may flow along the second gas passage 42 and then be injected into the processing space 100 through the second gas passage 42. The second gas passage 42 may function as a passage through which the second gas flows and as an injection port for injecting the second gas into the processing space 100.

[0024] The second gas passage 42 and the first gas passage 41 may be arranged to be spatially separated from each other. Thus, the second gas supplied from the gas supply unit 40 to the second gas passage 42 may be sprayed into the processing space 100 without passing through the first gas passage 41. The first gas supplied from the gas supply unit 40 to the first gas passage 41 may be sprayed into the processing space 100 without passing through the second gas passage 42. The second gas passage 42 and the first gas passage 41 may spray gas toward different portions of the processing space 100.

[0025] 2 and 3, the gas jet unit 4 may include the upper electrode 43 and the lower electrode 44.

[0026] The upper electrode 43 may be disposed above the substrate support 3 to face the substrate support 3. The upper electrode 43 may be grounded to function as a ground electrode. The upper electrode 43 may include the first gas passage 41 and the second gas passage 42. Thus, the upper electrode 43 may inject the first gas through the first gas passage 41 and the second gas through the second gas passage 42. The first gas passage 41 and the second gas passage 42 may be disposed within the upper electrode 43 to be spatially separated from each other.

[0027] The first gas passage 41 may include a first connection hole 411 connected to the gas supply unit 40, and a plurality of first injection holes 412 connected to the first connection hole 411. The first connection hole 411 and the first injection holes 412 may be formed inside the upper electrode 43. One side of the first injection hole 412 may be connected to the first connection hole 411, and the other side may be connected to the processing space 100. Thus, the first gas supplied by the gas supply unit 40 may flow along the first connection hole 411 and then be injected into the processing space 100 through the first injection holes 412.

[0028] The second gas passage 42 may include a second connection hole 421 connected to the gas supply unit 40, and a plurality of second injection holes 422 connected to the second connection hole 421. The second connection hole 421 and the second injection holes 422 may be formed inside the upper electrode 43. One side of the second injection hole 422 may be connected to the second connection hole 421, and the other side may be connected to the processing space 100. Thus, the second gas supplied by the gas supply unit 40 may flow along the second connection hole 421 and then be injected into the processing space 100 through the second injection holes 422.

[0029] The lower electrode 44 may be disposed between the upper electrode 43 and the substrate support 3. The lower electrode 44 may be disposed below the upper electrode 43 at a distance from the upper electrode 43. An insulating member (not shown) for partial insulation may be disposed between the lower electrode 44 and the upper electrode 43. RF power may be applied to the lower electrode 44. When the upper electrode 43 is grounded and the RF power is applied to the lower electrode 44, plasma may be generated. Thus, the gas injection unit 4 may activate a gas using plasma and inject the activated gas into the processing space 100.

[0030] The lower electrode 44 may include a plurality of holes 44a. The holes 44a may be formed penetrating the lower electrode 44. The holes 44a may function as a flow path for passing the gas injected from the upper electrode 43.

[0031] 2, when the lower surface of the upper electrode 43 and the upper surface of the lower electrode 44 are each formed flat, some of the holes 44a are disposed at positions corresponding to the first gas passage 41, thereby allowing the first gas injected from the first gas passage 41 to pass therethrough. The remaining part of the holes 44a are disposed at positions corresponding to the second gas passage 42, thereby allowing the second gas injected from the second gas passage 42 to pass therethrough. Although not shown in the figure, the number of the holes 44a formed in the lower electrode 44 may be smaller than the total number of the first injection holes 412 of the first gas passage 41 and the second injection holes 422 of the second gas passage 42.

[0032] 3, when the upper electrode 43 includes a plurality of protruding electrodes 431, the lower electrode 44 may have the holes 44a formed at positions corresponding to the protruding electrodes 431. The protruding electrodes 431 may protrude toward the substrate support part 3. The protruding electrodes 431 may protrude downward from a lower surface of the upper electrode 43 and be inserted into the holes 44a. The first gas passage 41 may be provided inside each of the protruding electrodes 431. In this case, the first injection hole 412 may be formed to be connected to the first connection hole 411 at one side and to pass through the protruding electrode 431 at the other side.

[0033] 1 to 5, the lower electrode 44 may include a first electrode 441 and a second electrode 442.

[0034] The first electrode 441 is an electrode to which a first RF power is applied. The first RF power having a first frequency may be applied to the first electrode 441. The first electrode 441 may be electrically connected to a power applying unit 5. The power applying unit 5 may apply the first RF power having the first frequency to the first electrode 441. The first electrode 441 may be disposed in a first processing space 110 in the processing space 100.

[0035] The second electrode 442 is to which a second RF power is applied. The second electrode 442 may be applied with a second RF power having a second frequency. The second electrode 442 may be electrically connected to the power applying unit 5. The power applying unit 5 may apply the second RF power having the second frequency to the second electrode 442. The second electrode 442 may be disposed in a second processing space 120 within the processing space 100. Therefore, the second electrode 442 and the first electrode 441 may be disposed at different positions from each other within the processing space 100.

[0036] The second electrode 442 and the first electrode 441 may be applied with RF powers having different frequencies. That is, the first frequency and the second frequency are different from each other. Thus, the substrate processing apparatus 1 according to the present invention may perform a processing process on the substrate (S) using a first RF power having the first frequency through the first electrode 441. The substrate processing apparatus 1 according to the present invention may perform a processing process on the substrate (S) using a second RF power having the second frequency through the second electrode 442. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that a first thin film layer formed when a processing process is performed on the substrate (S) using the first RF power having the first frequency and a second thin film layer formed when a processing process is performed on the substrate (S) using the second RF power having the second frequency have different characteristics. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that a thin film having the respective advantages of the first thin film layer and the second thin film layer and having the respective disadvantages of the first thin film layer and the second thin film layer compensated for may be deposited. Thus, the substrate processing apparatus 1 according to the present invention may improve the quality of the substrate (S) after the processing process is completed.

[0037] The first frequency may be higher than the second frequency. In this case, the first frequency may be a relatively high frequency compared to the second frequency, and the second frequency may be a relatively low frequency compared to the first frequency. Thus, when a processing process is performed on the substrate (S) using a first RF power having the first frequency, a first thin film layer with improved step coverage can be deposited. When a processing process is performed on the substrate (S) using a second RF power having the second frequency, a second thin film layer with improved density can be deposited. By depositing the first thin film layer and the second thin film layer in this manner, the substrate processing apparatus 1 according to the present invention can deposit a thin film with excellent step coverage and density. In addition, in the process of performing a processing process on the substrate (S), stress acts on the substrate (S), which may cause the substrate (S) to warp upward or downward. However, the substrate processing apparatus 1 according to the present invention can reduce the stress acting on the substrate (S) by using the first RF power having the first frequency and the second RF power having the second frequency. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the degree of warpage deformation of the substrate (S), thereby further improving the quality of the substrate (S) after the processing process is completed. For example, the first frequency can be 13.56 MHz to 100 MHz, and the second frequency can be 10 kHz to 4 MHz. For example, a first RF power of 1 kW to 5 kW can be applied to the first electrode 441, and a second RF power of 1 kW to 15 kW can be applied to the second electrode.

[0038] The second electrode 442 and the first electrode 441 may be formed to have the same area. Therefore, when the second RF power having the second frequency is applied to the second electrode 442 and when the first RF power having the first frequency is applied to the first electrode 441, the efficiency of the processing process on the substrate (S) may be substantially the same. The area of ​​the second electrode 442 may be relative to a lower surface of the second electrode 442 facing the substrate support 3. The area of ​​the first electrode 441 may be relative to a lower surface of the first electrode 441 facing the substrate support 3.

[0039] Here, the first electrode 441 may include a first connecting protrusion 441a. The first connecting protrusion 441a may protrude upward from an upper surface of the first electrode 441. The first connecting protrusion 441a may be inserted into a first through hole 432 formed in the upper electrode 43. The first through hole 432 is formed to penetrate the upper electrode 43. As a result, the first electrode 441 disposed below the upper electrode 43 and the power application unit 5 disposed above the upper electrode 43 may be electrically connected to each other through the first connecting protrusion 441a inserted into the first through hole 432. Therefore, the substrate processing apparatus 1 according to the present invention is embodied to apply the first RF power to the first electrode 441 while preventing a short circuit from occurring with respect to the grounded upper electrode 43. In addition, since the power application unit 5 may be disposed above the upper electrode 43, the substrate processing apparatus 1 according to the present invention may improve the ease of disposing the power application unit 5. The power application unit 5 may also be disposed outside the chamber 2. The power application unit 5 may include a first application mechanism 51 connected to the first electrode 441 to apply the first RF power to the first electrode 441. The first application mechanism 51 is electrically connected to a first connection protrusion 441a inserted into the first through-hole 432, and thereby can apply the first RF power having the first frequency to the first electrode 441 via the first connection protrusion 441a.

[0040] The first electrode 441 may be formed in a semicircular plate shape. In this case, the first connecting protrusion 441a may be disposed adjacent to the center of the first electrode 441. Therefore, deviations in distances between the parts of the first electrode 441 disposed in different directions with respect to the center of the first electrode 441 and the first connecting protrusion 441a may be reduced. Therefore, the substrate processing apparatus 1 according to the present invention may improve the uniformity of the first RF power applied to the parts of the first electrode 441 disposed in different directions with respect to the center of the first electrode 441. The first connecting protrusion 441a may be disposed on the center of the first electrode 441.

[0041] The second electrode 442 may include a second connecting protrusion 442a. The second connecting protrusion 442a may protrude upward from an upper surface of the second electrode 442. The second connecting protrusion 442a may be inserted into a second through hole 433 formed in the upper electrode 43. The second through hole 433 is formed to penetrate the upper electrode 43 at a position spaced apart from the first through hole 432. Thus, the second electrode 442 disposed below the upper electrode 43 and the power applying unit 5 disposed above the upper electrode 43 may be electrically connected to each other through the second connecting protrusion 442a inserted into the second through hole 433. Therefore, the substrate processing apparatus 1 according to the present invention is embodied to apply the second RF power to the second electrode 442 while preventing a short circuit from occurring with respect to the grounded upper electrode 43. The power applying unit 5 may include a second applying mechanism 52 connected to the second electrode 442 to apply the second RF power to the second electrode 442. The second application mechanism 52 is electrically connected to a second connecting protrusion 442a inserted into the second through hole 433, thereby being able to apply a second RF power having the second frequency to the second electrode 442 via the second connecting protrusion 442a.

[0042] The second electrode 442 may be formed in a semicircular plate shape. In this case, the second connecting protrusion 442a may be disposed adjacent to the center of the second electrode 442. Therefore, deviations occurring in the distances of the portions of the second electrode 442 disposed in different directions with respect to the center of the second electrode 442 from the second connecting protrusion 442a can be reduced. Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the second RF power applied to the portions of the second electrode 442 disposed in different directions with respect to the center of the second electrode 442. The second connecting protrusion 442a may be disposed at the center of the second electrode 442.

[0043] The second electrode 442 and the first electrode 441 may be spaced apart from each other. An insulator 45 may be disposed between the second electrode 442 and the first electrode 441. The insulator 45 may insulate the second electrode 442 from the first electrode 441. The insulator 45 may be coupled to the upper electrode 43. The insulator 45 may be coupled to the upper electrode 43 so as to protrude downward from the upper electrode 43, and may be disposed between the second electrode 442 and the first electrode 441. The insulator 45 may include a first insulating member 451 and a second insulating member 452. The first insulating member 451 and the second insulating member 452 may be disposed between the first electrode 441 and the second electrode 442 at different positions. The first insulating member 451 and the second insulating member 452 may be disposed spaced apart from each other based on a central portion of the upper electrode 43.

[0044] As shown in FIG. 6, the second electrode 442 and the first electrode 441 may be integrally formed. Thus, the lower electrode 44 may be embodied as one electrode. In this case, the power application unit 5 may selectively apply RF power to the first electrode 441 and the second electrode 442 according to a preset process sequence. The power application unit 5 may apply the first RF power having the first frequency to the first electrode 441 using the first application mechanism 51. Thus, the first RF power having the first frequency is applied to the first electrode 441 and the second electrode 442, so that a processing process using the first RF power having the first frequency can be performed. In this case, the second application mechanism 52 does not apply the second RF power to the second electrode 442. The power application unit 5 may apply the second RF power having the second frequency to the second electrode 442 using the second application mechanism 52. As a result, a second RF power having the second frequency is applied to the second electrode 442 and the first electrode 441, so that a processing process using the second RF power having the second frequency can be performed.

[0045] On the other hand, as shown in FIG. 5, when the second electrode 442 and the first electrode 441 are formed apart from each other, the power application unit 5 can apply RF power to at least one of the first electrode 441 and the second electrode 442. The power application unit 5 can apply a first RF power having the first frequency to the first electrode 441 using the first application mechanism 51, and can apply a second RF power having the second frequency to the second electrode 442 using the second application mechanism 52. As a result, a processing step using the first RF power having the first frequency can be performed in the first processing space 110, and a processing step using the second RF power having the second frequency can be performed in the second processing space 120. The power application unit 5 does not need to apply the first RF power having the first frequency to the first electrode 441 using the first application mechanism 51, and does not need to apply the second RF power to the second electrode 442 using the second application mechanism 52. In addition, the power application section 5 may apply a second RF power having the second frequency to the second electrode 442 using the second application mechanism 52, while not applying the first RF power to the first electrode 441 using the first application mechanism 51.

[0046] 1 to 7, a substrate processing apparatus 1 according to the present invention can include a rotating unit .

[0047] The rotating unit 7 rotates the substrate support unit 3. The rotating unit 7 rotates the substrate support unit 3 about a rotation axis 3a, thereby rotating the substrate (S) supported by the substrate support unit 3 about the rotation axis 3a. This allows the substrate (S) supported by the substrate support unit 3 to pass under the first electrode 441 and under the second electrode 442. Therefore, a processing step using the first frequency can be performed on the substrate (S) passing under the first electrode 441, and a processing step using the second frequency can be performed on the substrate (S) passing under the second electrode 442. That is, while the substrate (S) passes through the first processing space 110 and the second processing space 120 in this order, a processing step using RF powers having different frequencies can be performed on the substrate (S). In this case, the power application unit 5 can apply a first RF power having the first frequency to the first electrode 441 and a second RF power having the second frequency to the second electrode 442.

[0048] On the other hand, when the power application unit 5 applies a first RF power having the first frequency to the first electrode 441 but does not apply the second RF power to the second electrode 442, the substrate (S) supported by the substrate support unit 3 can undergo a processing step using the first frequency only while passing under the first electrode 441. When the power application unit 5 applies a second RF power having the second frequency to the second electrode 442 but does not apply the first RF power to the first electrode 441, the substrate (S) supported by the substrate support unit 3 can undergo a processing step using the frequency only while passing under the second electrode 442.

[0049] 1 to 8, a substrate processing apparatus 1 according to the present invention can include a detection unit 6. As shown in FIG.

[0050] The detection unit 6 is disposed so as to be inserted into both the upper electrode 43 and the lower electrode 44. The detection unit 6 may be disposed between the first electrode 441 and the second electrode 442. The detection unit 6 may have a detection hole 61 formed therein. The detection hole 61 may be formed penetrating the detection unit 6. As a result, the substrate processing apparatus 1 according to the present invention may be embodied so as to be able to check the inside of the chamber 2 from the outside of the chamber 2 through the detection hole 61. For example, the substrate processing apparatus 1 according to the present invention may be embodied so as to detect the temperature of the substrate (S) passing under the detection hole 61 through the detection hole 61. The substrate processing apparatus 1 according to the present invention may also be configured to detect the degree of deformation of the substrate (S) passing under the detection hole 61 through the detection hole 61. A transparent window 62 having the detection hole 61 may be coupled to the upper end of the detection unit 6.

[0051] The detection unit 6 may be inserted into the first insulating member 451. The detection unit 6 may be made of an insulating material. In this case, the detection unit 6 may be embodied to have an insulating function of insulating the first electrode 441 and the second electrode 442, and a detection function using the detection hole 61. When the detection unit 6 is made of an insulating material, the substrate processing apparatus 1 according to the present invention may be embodied to insulate the first electrode 441 and the second electrode 442 by the detection unit 6 without the first insulating member 451.

[0052] The present invention described above is not limited to the above-mentioned embodiments and the accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications and alterations are possible without departing from the technical spirit of the present invention.

Claims

1. A substrate processing apparatus, comprising: Chamber, a substrate support for supporting one or more substrates within the chamber; an upper electrode disposed above the substrate support so as to face the substrate support, the upper electrode having a first through hole and a second through hole spaced apart from each other; a lower electrode disposed below the upper electrode and spaced apart from the upper electrode, the upper electrode injects a first gas through a first gas passage and injects a second gas through a second gas passage spatially separated from the first gas passage; The lower electrode is a first electrode to which a first RF power having a first frequency is applied; and a second electrode to which a second RF power having a second frequency different from the first frequency is applied; the substrate processing apparatus further includes a rotation unit that rotates the substrate support unit so that the substrate supported by the substrate support unit passes under the first electrode and under the second electrode; the first electrode includes a first connecting protrusion inserted into the first through hole and is connected to a first applying mechanism that applies the first RF power via the first connecting protrusion; The second electrode includes a second connecting protrusion that is inserted into the second through hole, and is connected to a second application mechanism that applies the second RF power via the second connecting protrusion.

2. 2. The substrate processing apparatus according to claim 1, wherein the first electrode and the second electrode are formed to have the same area.

3. 2. The substrate processing apparatus according to claim 1, wherein the first frequency is higher than the second frequency.

4. The first frequency is equal to or greater than 13.56 MHz and equal to or less than 100 MHz, 4. The substrate processing apparatus according to claim 3, wherein the second frequency is equal to or higher than 10 kHz and equal to or lower than 4 MHz.

5. 2. The substrate processing apparatus according to claim 1, further comprising an insulator disposed between the first electrode and the second electrode.

6. the upper electrode includes a plurality of protruding electrodes protruding toward the substrate support portion, 2. The substrate processing apparatus according to claim 1, wherein the first gas flow passage is provided inside each of the protruding electrodes.

7. A plurality of holes are formed in the lower electrode, 7. The substrate processing apparatus according to claim 6, wherein the protruding electrodes of the upper electrode are inserted into the plurality of holes, respectively.

8. A first RF power of 1 kW or more and 5 kW or less is applied to the first electrode, 2 . The substrate processing apparatus according to claim 1 , wherein a second RF power of 1 kW or more and 15 kW or less is applied to the second electrode.

9. The sensor further includes a detection portion disposed between the first electrode and the second electrode, the detection portion including a detection hole formed through the detection portion; the detection unit is disposed so as to be inserted into both the upper electrode and the lower electrode; The substrate processing apparatus according to claim 1 , wherein the rotating section rotates the substrate support section so that the substrate passes under the detection hole.

10. A substrate processing apparatus comprising: Chamber a substrate support for supporting one or more substrates within the chamber; a gas injection unit disposed above the substrate support unit so as to face the substrate support unit; and A power application unit for applying RF power, the gas injection unit includes an upper electrode having a first gas flow passage and a second gas flow passage that are spatially separated from each other, and a lower electrode disposed between the upper electrode and the substrate support unit; the upper electrode has a first through hole and a second through hole spaced apart from each other; the lower electrode includes a first electrode and a second electrode disposed below the upper electrode, the power application unit includes a first application mechanism connected to the first electrode so as to be able to apply a first RF power having a first frequency to the first electrode, and a second application mechanism connected to the second electrode so as to be able to apply a second RF power having a second frequency different from the first frequency to the second electrode; the substrate processing apparatus further includes a rotation unit that rotates the substrate support unit so that the substrate supported by the substrate support unit passes under the first electrode and under the second electrode; the first electrode includes a first connecting protrusion inserted into the first through hole and is connected to a first applying mechanism that applies the first RF power via the first connecting protrusion; The second electrode includes a second connecting protrusion that is inserted into the second through hole, and is connected to a second application mechanism that applies the second RF power via the second connecting protrusion.

Images