Vertical field effect transistor and method for forming same - Patents.com

Abstract

To provide a vertical field effect transistor and a method of forming the same, which can realize a vertical field effect transistor with improved surface contact.SOLUTION: A vertical field effect transistor (200) includes a drift region (204), a semiconductor fin (230) on or above the drift region (204), a connection region (212) on or above the semiconductor fin (230), and a gate electrode (220) formed next to at least one sidewall of the semiconductor fin (230). In a first section (208) located next to the gate electrode (220), the semiconductor fin (230) has a smaller lateral extent than in a second section (206) in contact with the drift region (204) and / or in a third section (210) in contact with the connection region (212).SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to vertical field effect transistors and methods for their formation. [Background technology]

[0002] In the automotive sector, the ongoing development towards electromobility requires solutions for power semiconductors that switch fast and losslessly. The simultaneous trend from lateral to vertical components and the shift from decades-old silicon technology to so-called "wide band gap" materials, i.e. wide band gap semiconductor materials, such as silicon carbide (SiC) or gallium nitride (GaN), has led to the development of new component concepts and manufacturing processes.

[0003] For the application of wide bandgap semiconductors, the use of so-called power FinFETs (Fin = fin, FET = field effect transistor) can be advantageous. In conventional MOSFETs or MISFETs, the actively switchable component is provided by an inversion channel, e.g. by a p-type region in an npn junction, through which an electron path is formed by application of a gate voltage. In contrast, in power FinFETs, the switchable component consists of a thin semiconductor fin, which can be switched by suitable selection of its geometry and the gate metallization. The channel resistance of a power FinFET is much lower than in the case of conventional MOSFETs or MISFETs based on SiC or GaN. On this basis, a lower on-resistance of the entire component results.

[0004] In a power FinFET, a channel region in the region of the semiconductor fin is formed at the height of the gate metal. The width of this region mainly determines the threshold voltage of the power FinFET, so to guarantee full depletion, the width of this region should be below a certain value. The structure of a related art power FinFET 100 is illustrated in FIG. 1. A conventional power FinFET 100 has a drift region 104 with n-type doping, a drain electrode 106, a source electrode 108, a gate electrode 110, a semiconductor fin 112, a gate dielectric 114, and an insulating portion 116 on a substrate 102. The semiconductor fin 112 is connected to the source electrode 108 by an n+ type doping 118. In the power FinFET 100, the switchable component consists of a thin semiconductor fin 112, which is switchable by its geometry and by an appropriate selection of the gate metallization 110. The width of the semiconductor fin depends, among other things, on the work function of the semiconductor material and the gate metal used in the semiconductor fin. Such thin semiconductor fins can no longer be manufactured using conventional photolithography as is typically used in the mass production of power transistors. In addition, thin semiconductor fins make it difficult to make electrical contact with surface metallization, which has low electrical resistance. Summary of the Invention [Problem to be solved by the invention]

[0005] It is an object of the present invention to provide a vertical field effect transistor and a method for its formation which allows for a vertical field effect transistor with improved surface contacts. [Means for solving the problem]

[0006] The object is achieved according to one aspect of the present invention by a vertical field effect transistor, which has a drift region, a semiconductor fin on or above the drift region, a connection region on or above the semiconductor fin, and a gate electrode formed next to at least one sidewall of the semiconductor fin, the semiconductor fin having a gate electrode formed next to the gate electrode. In the first section, which is located, the semiconductor fin has a smaller lateral extent than in the second section in contact with the drift region and / or in the third section in contact with the connection region. The wider regions above and / or below the channel region (first section) allow a larger contact area on the semiconductor fin and thus a reduction in the parasitic electrical contact resistance of the contact regions of the semiconductor fin (second and / or third sections of the semiconductor fin). The extended semiconductor fin in the region above and / or below the channel region allows a reduction in the contact resistance of the surface contact, e.g. the source electrode.

[0007] Instead of a semiconductor fin, in a further embodiment a semiconductor pillar may be formed. The object is achieved according to a further aspect of the invention by a method for the formation of a vertical field effect transistor, comprising the steps of forming a drift region, forming a semiconductor fin on or above the drift region, forming a connection region on or above the semiconductor fin, and forming a gate electrode formed next to at least one sidewall of the semiconductor fin, the semiconductor fin being formed with a smaller lateral extent in a first section arranged laterally next to the gate electrode than in a second section in contact with the drift region and / or in a third section in contact with the connection region. This makes it possible to employ factory equipment for producing the vertical field effect transistor that is cheaper in terms of investment costs and operating costs compared to other concepts.

[0008] Variations of these aspects are set out in the dependent claims and in the specification.Embodiments of the invention are shown in the drawings and are explained in more detail below. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram of a related art vertical field effect transistor. [Diagram 2] 1A-1D are schematic cross-sectional views of vertical field effect transistors according to various embodiments. [Diagram 3]1A-1D are schematic cross-sectional views of vertical field effect transistors according to various embodiments. [Figure 4] 1A-1D are schematic cross-sectional views of vertical field effect transistors according to various embodiments. [Diagram 5] 1A-1D are schematic cross-sectional views of vertical field effect transistors according to various embodiments. [Figure 6] 1A-1D are schematic cross-sectional views of vertical field effect transistors according to various embodiments. [Figure 7] 1A-1D are schematic diagrams of process steps for fabricating a vertical field effect transistor in accordance with various embodiments. [Figure 8] 8A is a schematic top view of a semiconductor fin, FIG. 8B is a schematic top view of a semiconductor pillar, and FIG. 8C is a schematic top view of a network of connected semiconductor fins, according to various embodiments. [Figure 9] FIG. 1 is a flow diagram of a method for forming a vertical field effect transistor in accordance with various embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] In the following detailed description, reference is made to the accompanying drawings, which form a part of this description, and which show, for the purposes of illustration, specific exemplary embodiments in which the present invention may be practiced. It is obvious that other exemplary embodiments may be utilized and that structural or logical changes may be made without departing from the scope of protection of the present invention. It is obvious that the features of the various exemplary embodiments described herein may be combined with each other, unless otherwise specifically stated. Therefore, the following detailed description should not be taken in a limiting sense, and the present invention should not be construed as being limited to the above-mentioned specific embodiments. The scope of protection of the invention is defined by the appended claims. Wherever reasonable, identical or similar elements have been given the same reference numbers in the figures.

[0011] FIG. 2 shows a schematic cross-sectional view of a vertical field effect transistor 200 according to various embodiments. In various embodiments, the vertical field effect transistor 200 comprises a drift region 204 on a semiconductor substrate 202, a semiconductor fin 230 (whose longitudinal direction extends vertically in the drawing plane) with a connection region 212 on or above the drift region 204, a first source / drain electrode (e.g., source electrode 214) and a second source / drain electrode (e.g., drain electrode 216). In the following, it is assumed by way of example that the first source / drain electrode is the source electrode 214 and the second source / drain electrode is the drain electrode 216. The vertical field effect transistor 200 further comprises a gate electrode 220 adjacent to at least one sidewall of the semiconductor fin 230, the gate electrode 220 being electrically insulated from the source electrode 214 by an insulating layer 222. A gate dielectric 218 is disposed between the gate electrode 220 and at least one sidewall of the semiconductor fin 230.

[0012] The semiconductor fin 230 is formed to have a smaller lateral extent in the first section 208, which is arranged laterally next to the gate electrode 220, than in the second section 206, which is in contact with the drift region 204, and / or in the third section 210, which is in contact with the source electrode 214. This allows the current-carrying contact area at the substrate surface to be enlarged by many times, which allows a significantly lower and more reliable ohmic contact area for vertical field-effect transistors to be created.

[0013] In other words, the semiconductor fin 230 is laterally extended in the second section 206 and / or the third section 210 relative to the first section 208 and therefore has a reduced total resistance. The extensions in the second section 206 and the third section 210 may be formed with the same lateral extent or with different lateral extents. In various embodiments, the semiconductor fin 230 has a larger lateral extent in the second section 206 than in the first section 208, but does not have a larger lateral extent in the third section 210 than in the first section 208 (see FIG. 3 ). As an alternative, the semiconductor fin 230 has a larger lateral extent in the third section 210 than in the first section 208, but does not have a larger lateral extent in the second section 206 than in the first section 208. Alternatively, the semiconductor fin 230 has a greater lateral extent in the second and third sections 206, 210 than in the first section 208. The semiconductor fin 230 may have at least one substantially linear, i.e. straight, or vertically flat sidewall. The semiconductor fin 230 may have, for example, a linear first sidewall and a linear second sidewall opposite the first sidewall. The first and second sidewalls may be parallel to each other.

[0014] FIG. 2 shows a schematic cross-sectional view of a single FinFET cell according to various embodiments. Typically, hundreds to thousands of such cells are connected in parallel, and the structure continues in the three-dimensional plane. Combining multiple cells results in an array of FinFET cells that spans two dimensions. The vertical field-effect transistor may be a power semiconductor component. As an example, the semiconductor substrate 202 may be a GaN substrate 202 or a SiC substrate 202. On the semiconductor substrate 202, a semiconductor drift region 204 of weak n-type conductivity, for example a GaN drift region 204 or a SiC drift region 204, may be formed (e.g. coated). On top of the drift region 204, a semiconductor region of n-type conductivity in the form of a semiconductor fin 230, for example a GaN fin or a SiC fin, may be formed. The connection region 212 may have or consist of an n-type doped (e.g. n+ type doped) semiconductor material.

[0015] For the vertical field effect transistor 200 to function as a transistor or switch In the first section 208, the semiconductor fin 230 has, for example, a lateral extent in the plane of the drawing of between about 100 nm and about 200 nm, and a vertical extent in the plane of the drawing of between about 0.3 μm and about 3 μm.

[0016] Without the application of a gate voltage, the field effect transistor 200 may be self-blocking because the electron gas in the drift region 204 may be depleted beneath the semiconductor fin 230. Application of a positive voltage to the gate electrode 220 may cause electrons to accumulate in the region of the semiconductor fin 230 adjacent to the gate electrode 220. Electrons may flow from the source electrode 214 through the semiconductor fin 230 into the bottom of the semiconductor fin 230 and from there into the drift region 204, through the drift region 204 and the substrate 202 into the drain electrode 216.

[0017] In various embodiments, the connection region 212 is formed the entire depth (into the plane of the drawing) above the third section 210 . In various embodiments, the gate dielectric 218, drift region 204, and / or semiconductor fin 230 may be formed such that the interface to the gate dielectric 218 has rounded corners and / or edges or has as large a radius of curvature as possible, which allows for a reduction in electric field peaks.

[0018] As illustrated in FIG. 3 , which shows a vertical field effect transistor 300 according to various embodiments, in various embodiments the connection region 212 has a lateral extent that is greater than the lateral extent of the semiconductor fin 230 in the third section 210.

[0019] As illustrated in FIG. 4 , which shows a vertical field effect transistor 400 according to various embodiments, the semiconductor fin 230 may have a coupling region 402 in the second section 206 that has a greater electrical conductivity than the semiconductor fin 230 in the first section 208 and / or the drift region 204.

[0020] 4, in various embodiments, there may be a shield structure 404 formed adjacent to the coupling region 402, the shield structure 404 having a different conductivity type than the coupling region 402. The coupling region 402 in the second section may comprise or consist of an n-type doped (e.g., n+ type doped) semiconductor material. The shield structure 404 may comprise or consist of, for example, a p-type doped semiconductor material or an intrinsic semiconductor material.

[0021] The semiconductor fin 230 may be more heavily n-doped in the second section 206 than in the first section 208. This allows for better current spreading. Furthermore, a shield structure 404 may be provided that is disposed in the drift region 204 under the gate electrode 220. This allows for shielding the gate dielectric 218 against electric field peaks. The semiconductor fin 230 may have a higher n-doping in the second section 206. Alternatively, the higher n-doping may be formed up to the lower edge of the shield structure 404. The shield structure 404 with p-doping may be conductively connected to the source electrode 214. Alternatively or additionally, the electric field peaks that occur vertically in the gate dielectric 218 between the gate electrode 220 and the drift region 204 may be lowered by a second insulating layer 223 that is disposed next to the semiconductor fin 230 in the bottom between the drift region 204 and the gate electrode 220, as illustrated in FIG. 5 showing a vertical field effect transistor 500 according to various embodiments. For example, the second insulating layer 223 may be disposed between the gate dielectric 218 and the drift region 204. This makes it possible to increase the breakdown strength of the gate dielectric 218 in the region and thus the withstand voltage of the vertical field effect transistor. The second insulating layer 223 may have a thickness greater than that of the gate dielectric 218.

[0022] As illustrated in FIG. 6, which shows a vertical field effect transistor 600 according to various embodiments, in various embodiments, at least one sidewall of the semiconductor fin 230 can be warped or curved.

[0023] A number of semiconductor fins 230 may be arranged side by side (see FIG. 8A). Instead of a semiconductor fin, one or more semiconductor pillars 240 (see FIG. 8B) may be provided. Alternatively, a network of two or more interconnected semiconductor fins 230 may be provided (see FIG. 8C).

[0024] FIG. 9 shows a flow diagram of a method 900 for forming a vertical field effect transistor according to various embodiments. The method 900 includes steps 910 of forming a drift region, 920 of forming a semiconductor fin on or above the drift region, 930 of forming a connection region on or above the semiconductor fin, and 940 of forming a gate electrode formed next to at least one sidewall of the semiconductor fin. The semiconductor fin is formed with a smaller lateral extent in a first section disposed laterally adjacent to the gate electrode than in a second section contacting the drift region and / or in a third section contacting the connection region. The smaller lateral extent of the semiconductor fin can be formed, for example, using an etch stop mask and anisotropic etching. The etch stop mask can be formed on or above the semiconductor fin.

[0025] For semiconductor materials on which no thermal oxide can be formed, such as gallium nitride (GaN), gallium oxide (GaOx), aluminum nitride (AlN), diamond, anisotropic etching processes may offer the possibility to achieve the shape shown in Figure 2 of the semiconductor fin 230. Figures 7A-F show schematic cross-sectional views of an example of a method for the formation of a GaN-based vertical field effect transistor.

[0026] FIG. 7A shows the presentation of an n+ doped semiconductor material (212), which is provided by epitaxy or (ion) implantation on or above the drift region 204 and the substrate 202. Planar semiconductor fins are formed in the n+ doped semiconductor material, whereby the connection regions 212 are structured and formed. The structuring can be formed by wet chemical etching or dry etching. For gallium nitride, gallium oxide and aluminium nitride, dry etching can be applied, for example in a chlorine-containing plasma. For diamond, a comparable etching in an oxygen-containing plasma can be applied. A wet chemical etching process for gallium nitride is possible, for example in potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH) at various concentrations and temperatures.

[0027] 7B shows the masking or formation of a mask 702 on or above the connection region 212 and the structuring or formation of a groove structure (trench) to expose or form a semiconductor fin. As masking material nitride and / or oxide compounds can be used.

[0028] FIG. 7C illustrates an anisotropic wet etch using, for example, KOH or TMAH, to form the first section of the semiconductor fin. FIG. 7D illustrates the formation of a further masking or mask 704 on or above the semiconductor fin.

[0029] FIG. 7E illustrates the formation of a further trench structure around the periphery of the masked semiconductor fin to form an extension of the semiconductor fin 230 or a second section of the semiconductor fin. FIG. 7F shows the formation of gate, source, and drain electrodes and insulation.

[0030] The described and illustrated embodiments are only selected as examples. The different embodiments can be combined with each other in whole or with respect to individual features. An embodiment may be supplemented by features of further embodiments. Furthermore, the described process steps can be repeated and can be performed in a different order than described. In particular, the invention is not limited to the presented methods.

Claims

[Claim 1] A drift region (204); a semiconductor pillar (240) on or above the drift region (204); a connection region (212) on or above said semiconductor pillar (240); a gate electrode (220) formed adjacent at least one sidewall of the semiconductor pillar (240); A vertical field effect transistor (200, 300, 400, 500, 600) in which the semiconductor pillar (240) has a smaller lateral extent anywhere in a first section (208) arranged laterally adjacent to the gate electrode (220) than in a second section (206) in contact with the drift region (204) and / or in a third section (210) in contact with the connection region (212), the connection region (212) has a lateral extent greater than the lateral extent of the semiconductor pillar (240) in the third section (210); Vertical field effect transistor (200, 300, 400, 500, 600).

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