Optical Modulator and Transmitter

Abstract

Provided is an EA modulator having a structure with an increased optical confinement factor. An optical modulator (130) having a high mesa structure comprising an InP-based material, the optical modulator (130 comprising a waveguide core (132) having a multiple quantum well structure, a lower selective etching layer (135a) inserted in a lower cladding (101, 133) across an interval from the waveguide core (132), and an upper selective etching layer (135b) inserted in an upper cladding (102, 134) across an interval from the waveguide core (132), the lower selective etching layer (135a) and the upper selective etching layer (135b) being narrower than the mesa width of the high mesa structure.

Description

[Technical field]

[0001] The present invention relates to an optical modulator and an optical transmitter, and more particularly to an optical transmitter used in the field of optical communications in which a light source and an optical modulator are monolithically integrated. [Background technology]

[0002] In the field of optical communications, the spread of video and video distribution over networks has led to a demand for faster communication speeds than ever before. Optical transmitters that transmit in addition to intensity modulation are small and low-cost, and are used as practical light sources. Thus, broadening the bandwidth of electro-absorption modulated lasers (EMLs), which are monolithically integrated with semiconductor lasers and optical modulators, is an important issue. For example, Non-Patent Document 1 proposes a method of expanding the bandwidth by replacing the semiconductor cladding of the modulator part of an EML with a polymer material with a lower dielectric constant.

[0003] In the past, a hybrid waveguide structure that removes the embedded semiconductor in an EA (Electro-absorption) modulator, known as a high mesa structure, has been proposed with the aim of broadening the bandwidth of the EA modulator. Although the high mesa structure can increase the optical confinement in the horizontal direction of the waveguide cross section, there was a problem in that the refractive index difference is small in EA modulators made of InP-based materials, making it difficult to improve the optical confinement coefficient in the vertical direction.

[0004] In addition, EML is a monolithically integrated element in which different waveguide structures are joined, and although the core material is the same, the cladding materials are different. In such a structure, the propagation characteristics of the eigenmodes in each waveguide are different, so there is a problem that optical loss occurs due to optical reflection and scattering at the junction, which leads to a decrease in the output power of the optical transmitter. [Prior art documents] [Non-patent literature]

[0005] [Non-Patent Document 1] W. Kobayashi et al., "Low-Power Consumption 28-Gb / s 80-km Transmission With 1.3-μm SOA-Assisted Extended-Reach EADFB Laser," in Journal of Lightwave Technology, vol. 35, no. 19, pp. 4297-4303, 1 Oct.1, 2017, doi: 10.1109 / JLT.2017.2737626. Summary of the Invention

[0006] An object of the present invention is to provide an EA modulator having a structure with an increased optical confinement factor, and a high-output optical transmitter having a structure that reduces splice loss in optical connections between heterogeneous waveguides made of different cladding materials.

[0007] In order to achieve such an object, one embodiment of the optical modulator of the present invention is an optical modulator having a high mesa structure made of an InP-based material, and having a multiple quantum well structure. vinegar a lower selective etching layer inserted in the lower clad with a gap between the waveguide core and the upper selective etching layer inserted in the upper clad with a gap between the waveguide core and the lower selective etching layer, Width is narrower than the mesa width of the high mesa structure.

[0008] In addition, one embodiment of the optical transmitter is a buried type buried in insulating InP. of A semiconductor laser; In an optical transmitter monolithically integrated with an optical modulator having a high mesa structure made of an InP-based material and a connection region connecting a waveguide core of the semiconductor laser and a waveguide core of the optical modulator, the connection region is made of a bulk waveguide made of an InGaAsP-based material and includes a semiconductor buried tapered portion which is a connection portion with the waveguide core of the semiconductor laser, the semiconductor buried tapered portion is buried with the insulating InP at a connection end face with the waveguide core of the semiconductor laser and is buried with a buried layer which buries the waveguide core of the optical modulator at a connection end face with the waveguide core of the optical modulator, and a tapered buried interface forms an angle of 45 degrees with respect to the optical axis direction of the bulk waveguide. The buried layer is made of a polymer material, and includes, in the connection region excluding the semiconductor buried taper portion, a layer made of the polymer material inserted in a lower clad with a gap from the bulk waveguide, and a layer made of the polymer material inserted in an upper clad with a gap from the bulk waveguide. It is characterized by: [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing a configuration of an optical transmitter according to a first embodiment of the present invention; [Diagram 2] FIG. 2 is a diagram showing a method for producing the optical transmitter of the first embodiment; [Diagram 3] FIG. 3 shows the mesa width dependence of the optical confinement factor in an EA modulator. [Figure 4] FIG. 4 is a diagram showing the dependence of the optical confinement factor on the distance between the waveguide core and the selective etching layer in the EA modulator of the first embodiment; [Diagram 5] FIG. 5 is a diagram showing a configuration of an optical transmitter according to a second embodiment of the present invention; [Figure 6] FIG. 6 is a diagram showing a semiconductor embedded tapered portion in a connection region in the EA modulator of the first embodiment; [Figure 7] FIG. 7 is a diagram showing a configuration of an optical transmitter according to a third embodiment of the present invention; [Figure 8] FIG. 8 is a diagram showing the dependence of the optical coupling coefficient on the distance between the waveguide core and the selective etching layer in the EA modulator of the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In this embodiment, an EML in which a distributed feedback (DFB) semiconductor laser and an EA modulator are integrated will be described as an example, but the present invention can also be applied to an optical transmitter using a light source such as a distributed Bragg reflector (DBR) semiconductor laser or an optical modulator of another type. It can also be applied. EXAMPLES

[0011] FIG. 1 shows the configuration of an optical transmitter according to a first embodiment of the present invention. FIG. 1(a) is a cross-sectional view of a waveguide core in the optical axis (Z-axis) direction, and FIG. 1(b) is a cross-sectional view (XY plane) perpendicular to the optical axis in the EA modulator. In the optical transmitter 100, waveguide cores 112, 122, and 132 and a p-InP clad 102 serving as an upper clad are laminated on an n-InP substrate 101 serving as a lower clad. The optical transmitter 100 has a configuration in which a DFB laser 110 and an EA modulator 130 are connected by a connection region 120. A common lower electrode 103 is formed on the lower surface of the n-InP substrate 101, an LD electrode 111 is formed on the upper surface of the DFB laser 110, and an EA electrode 131 is formed on the upper surface of the EA modulator 130. The DFB laser 110 is a buried type semiconductor laser buried in insulating InP doped with impurities such as Fe.

[0012] With reference to FIG. 1(b), the configuration of an EA modulator 130 having a high mesa structure made of an InP-based material will be described in detail. The waveguide core 132 has, for example, a multi-quantum well (MQW) structure made of an InGaAsP-based material. A part of the lower cladding 101, the waveguide core 132, and the upper cladding 102 are processed into a high mesa structure, and both sides of the mesa are buried with burying layers 104a and 104b made of a low refractive index polymer material, such as benzocyclobutene (BCB). The burying layers 104a and 104b contribute to improving the optical confinement factor and reducing the capacitance of the electrode pads of the EA modulator. The high mesa structure can be formed by burying the high mesa structure with SiO2 Alternatively, the mesa may be protected by a passivation film treatment such as SiN. In this case, the buried layers 104a and 104b in FIG.

[0013] A lower selective etching layer 135a is inserted into the lower cladding 101 of the waveguide core 132 with a gap between it and the waveguide core 132. The lower selective etching layer 135a is made of a material with a different etching rate from the semiconductor material of the waveguide core such as InP, for example, InGaAlAs for InP, InGaAsP. Similarly, an upper selective etching layer 135b is inserted into the upper cladding with a gap between it and the waveguide core 132. The width of the selective etching layers 135a and 135b, that is, the width in the X-axis direction, is processed so that it is narrower than the width of the mesa. With this structure, the effective refractive index of the cladding region can be reduced and the optical confinement coefficient in the Y-axis direction can be improved.

[0014] FIG. 2 shows an outline of a method for fabricating the EA modulator 130 of the optical transmitter of the first embodiment. A selective etching layer 135a, a lower cladding layer 133, a waveguide core 132, an upper cladding layer 134, a selective etching layer 135b, and an upper cladding layer 102 are laminated in order on an n-InP substrate 101 by epitaxial growth such as MOCVD (FIG. 2(a)). The material of the waveguide core 132 is preferably an InGaAsP material having a band gap corresponding to a wavelength of 1.3 to 1.6 μm for application in the optical communication field. Next, each layer is removed by etching until a part of the n-InP substrate 101 is reached, forming a high mesa structure having a desired width in the X-axis direction (FIG. 2(b)). At this time, dry etching is performed using an RIE (Reactive Ion Etching) device or an ICP (Inductively Coupled Plasma) device.

[0015] Next, for example, Oxidation water Raw andThe selective etching layers 135a and 135b made of InGaAlAs material are selectively etched by wet etching using an etchant such as citric acid (FIG. 2(c)). Finally, both sides of the high mesa structure are filled with a polymer material such as BCB to form the buried layers 104a and 104b, and the lower electrode 103 and the EA electrode 131 are formed (FIG. 2(d)).

[0016] The thickness of each layer is 240 nm for the waveguide core 132, 450 nm for the selective etching layers 135a and 135b, and 200 nm for the lower cladding layer 133 and the upper cladding layer 134. When the mesa width of the high mesa structure is 1 μm, the amount of side etching in the etching process shown in FIG. 2(c) is controlled in the range of 200 to 300 nm. If the amount of side etching is too large, the width of the waveguide in the selective etching layer in the X direction becomes narrow, increasing the electrical resistance and leading to a decrease in the thermal conduction efficiency. It is desirable that the width of the selective etching layers 135a and 135b is within the range of 30% to 50% of the mesa width.

[0017] Figure 3 shows the mesa width dependency of the optical confinement factor in an EA modulator. This shows the case of an EA modulator with a conventional structure that does not include a selective etching layer. The narrower the mesa width of the high mesa structure, the higher the optical confinement factor; however, taking into account dimensional errors in manufacturing and the accuracy of the mesa shape, the mesa width is set to about 1.2 μm. In this case, the optical confinement factor is about 0.241.

[0018] FIG. 4 shows the dependence of the optical confinement factor on the distance between the waveguide core and the selective etching layer in the EA modulator of the first embodiment. When the mesa width of the high mesa structure is 1.2 μm, the optical confinement factor changes depending on the distance between the waveguide core and the lower and upper selective etching layers, that is, the thickness of the lower cladding layer 133 and the upper cladding layer 134. The three graphs show the cases of different side etching amounts. When the side etching amount is 300 nm and the distance between the waveguide core and the selective etching layer is 0.2 μm, the optical confinement factor is 0.28. Compared to the EA modulator of the conventional structure, the optical confinement factor can be improved by 13%. It can be seen that when the side etching amount is 100 nm, it is difficult to improve the optical confinement factor regardless of the distance between the waveguide core and the selective etching layer.

[0019] For these reasons, it is desirable to make the distance between the waveguide core and the selective etching layer, i.e., the thickness of the lower cladding layer 133 and the upper cladding layer 134, as thin as possible. Since the mode field diameter of the propagation mode in the conventional structure is about 0.6 μm (FWHM), Thickness If it is more than 1 μm, there is almost no overlap between the selective etching layer and the propagation mode, so the effect of improving the optical confinement factor cannot be obtained. It is preferable for the selective etching layer to be as close to the core as possible, but since epitaxial growth requires switching of growth gas between layers with different compositions, an InP layer of about 10 nm is inserted. Therefore, it is preferable for the distance between the waveguide core and the selective etching layer to be in the range of 0.01 to 1 μm.

[0020] Furthermore, a simulation showed that when the thickness of the selective etching layers 135a and 135b was in the range of 0.2 to 1 μm, an increase in the optical confinement factor of 5% or more was observed, and it is desirable to keep the thickness within this range. EXAMPLES

[0021] FIG. 5 shows the configuration of an optical transmitter according to a second embodiment of the present invention. FIG. 5(a) is a cross-sectional view of a high mesa structure in the optical axis (Z-axis) direction, and FIG. 5(b) is a cross-sectional view of a high mesa structure in the optical axis (Z-axis) direction. side viewThe optical transmitter 200 has a configuration in which a DFB laser 210 and an EA modulator 230 are connected by a connection region 220. In the optical transmitter 200, waveguide cores 212, 222, and 232 and a p-InP clad 202 serving as an upper clad are laminated on an n-InP substrate 201 serving as a lower clad. A common lower electrode 203 is formed on the lower surface of the n-InP substrate 201, an LD electrode 211 is formed on the upper surface of the DFB laser 210, and an EA electrode 231 is formed on the upper surface of the EA modulator 230. The EA modulator 230 of the optical transmitter 200 has a high mesa structure similar to that of the first embodiment, and is buried by buried layers 204a and 204b.

[0022] In the second embodiment, the waveguide core 222 in the connection region 220 is a bulk waveguide made of an InGaAsP-based material. The DFB laser 210, the connection region 220, and the EA modulator 230 have different layer structures and are fabricated by three epitaxial growths. The connection between the regions is made by a method called a butt joint. The connection region 220 includes a semiconductor embedded taper portion 223 which is a connection portion with the DFB laser 210, a straight portion 225 which is a connection portion with the EA modulator 230, and a passive taper portion 224 which connects the two. The passive taper portion is omitted if the widths of the waveguide cores to be connected are the same. With this structure, the connection region 220 connects the waveguide 212 of the DFB laser 210 and the waveguide 232 of the EA modulator 230 with low loss.

[0023] FIG. 6 shows an example. 2 6 shows the semiconductor embedded taper portion of the connection region in the EA modulator. FIG. 6(a) is a top view of the semiconductor embedded taper portion 223 of the connection region 220. FIG. 6(b) is a cross-sectional view of the connection end surface with the DFB laser 210. The width of the mesa of the DFB laser 210, i.e., the width of the waveguide core 212, is 2.5 μm. FIG. 6(d) is a cross-sectional view of the connection end surface with the passive taper portion 224. FIG. 6(c) is a cross-sectional view of the middle of the connection portion between the two.

[0024] As shown in Fig. 6(b), near the connection end face with the DFB laser 210, the waveguide core 222 is buried in InP claddings 213a and 213b that bury the waveguide core 212 of the DFB laser 210. On the other hand, as shown in Fig. 6(d), near the connection end face with the passive taper section 224, the waveguide core 222 is buried in burying layers 204a and 204b that bury the waveguide core 232 of the EA modulator 230. As shown in Fig. 6(a), the tapered burying interface is processed to form 45 degrees with respect to the optical axis direction of the waveguide core.

[0025] As a result of optical simulation, in the case of a connection region not having such a tapered embedded structure, the coupling efficiency between the waveguide 212 of the DFB laser 210 and the waveguide core 222 in the connection region 220 is 0.955, whereas in the case of the connection region 220 having the semiconductor embedded tapered portion 223 of Example 2, the coupling efficiency can be increased to 0.999.

[0026] The width of the mesa of the EA modulator 230, i.e., the width of the waveguide core 232, is 1.2 μm. Therefore, a passive taper section 224 is provided between a straight section 225 connected to the waveguide core 232 and the semiconductor embedded taper section 223. The length of the passive taper section 224 is set to be twice as long as that of the semiconductor embedded taper section 223, i.e., 40 μm. The length of the straight section 225 is 20 μm. The element length of the DFB laser 210 is 300 μm, and the element length of the EA modulator 230 is 75 μm. With the connection region 220 having such a structure, the coupling efficiency between the waveguide 212 of the DFB laser 210 and the waveguide 232 of the EA modulator 230 is 0.96.

[0027] In addition, the selective etching layers 235a and 235b are inserted in the EA modulator 230 as in the first embodiment, but even in an EA modulator having a conventional structure, the effect of the connection region 220 in the second embodiment can be achieved. EXAMPLES

[0028] FIG. 7 shows the configuration of an optical transmitter according to a third embodiment of the present invention. side view7(b) is a cross-sectional view (XY plane) perpendicular to the optical axis of the waveguide core in the connection region. The optical transmitter 300 has a configuration in which a DFB laser 310 and an EA modulator 330 are connected by a connection region 320. In the connection region 320 of the optical transmitter 300, a waveguide core 322 and a p-InP clad 302 serving as an upper clad are laminated on an n-InP substrate 301 serving as a lower clad. The configurations of the DFB laser 310 and the EA modulator 330 are the same as those in the first and second embodiments. Connection region 3 The waveguide core 322 is a bulk waveguide made of an InGaAsP-based material, and includes a semiconductor-embedded tapered portion 323, a passive tapered portion 324, and a straight portion 325, as in the second embodiment.

[0029] In the third embodiment, the selective etching layer similar to that of the EA modulator 330 is also introduced in the passive taper portion 324 and the straight portion 325 of the connection region 320 to further improve the optical coupling efficiency between the elements. The connection region 320 and the EA modulator 330 are fabricated by different epitaxial growth, so that different layer structures can be introduced. The difference between the selective etching layer of the connection region 320 and the selective etching layer of the EA modulator 330 is that in the connection region 320, the mesa is penetrated in the X-axis direction and is buried by buried layers 304a, 304b such as BCB, which is a polymer material with a low refractive index. In other words, the selective etching layer made of InGaAlAs material in the EA modulator 330 is replaced with a selective etching layer made of a polymer material.

[0030] In Figure 7, The fabrication process shown in Figure 2 As well asFirst, a selective etching layer is also laminated in the connection region 320. After the mesa is formed, etching is performed twice before the process of embedding with the embedding layers 304a and 304b. In the first wet etching process, the side of the mesa of the EA modulator 330 is covered by a photomask to protect it from side etching. That is, only the selective etching layer in the connection region 320 is etched. In the second wet etching process, the protective mask is removed, and the selective etching layers of both the connection region 320 and the EA modulator 330 are etched. In this way, in the connection region 320 except for the semiconductor embedded taper portion 323, the selective etching layer is removed to penetrate the mesa, and in the EA modulator 330, the selective etching layer of the desired width is left.

[0031] 8 shows the dependence of the optical coupling coefficient on the distance between the waveguide core and the selective etching layer in the EA modulator of Example 3. When the width of the high mesa structure is 1.2 μm, the distance between the waveguide core and the selective etching layer, that is, the lower cladding layer 3 27 and the upper cladding layer 3 28. When the spacing is 550 nm, the optical coupling coefficient between the waveguide 312 of the DFB laser 310 and the waveguide 332 of the EA modulator 330 is a maximum of 0.988. Therefore, according to the configuration of the connection region 320 of the third embodiment, the coupling efficiency between the DFB laser 310 and the EA modulator 330 can be increased.

[0032] As described above, according to this embodiment, the EA modulator can be shortened and its bandwidth increased by the structure that increases the optical confinement factor of the EA modulator. In addition, by applying a semiconductor embedded taper section to the connection region between the monolithically integrated semiconductor laser and the EA modulator and introducing a structure similar to that of the EA modulator, the coupling efficiency between the semiconductor laser and the EA modulator can be increased. This reduces the splice loss in the optical connection between different types of waveguides, and realizes a high-output optical transmitter that can operate at high speed.

Claims

1. An optical modulator having a high mesa structure made of an InP-based material, A waveguide core having a multiple quantum well structure; a lower selective etching layer inserted in the lower clad and spaced from the waveguide core; an upper selective etching layer inserted in the upper clad and spaced from the waveguide core; an upper selective etching layer having a width smaller than a mesa width of the high mesa structure;

2. the multiple quantum well structure is made of an InGaAsP-based material; 2. The optical modulator according to claim 1, wherein the lower selective etching layer and the upper selective etching layer are made of an InGaAlAs material.

3. a distance between the lower selective etching layer and the waveguide core and a distance between the upper selective etching layer and the waveguide core are in a range of 0.01 to 1 μm; the thickness of the lower selective etching layer and the upper selective etching layer is in the range of 0.2 to 1 μm; 3. The optical modulator according to claim 1, wherein the widths of the lower selective etching layer and the upper selective etching layer are in the range of 30% to 50% of the mesa width of the high mesa structure.

4. a buried type semiconductor laser buried in insulating InP; an optical modulator having a high mesa structure made of an InP-based material; In an optical transmitter in which a connection region that connects a waveguide core of the semiconductor laser and a waveguide core of the optical modulator is monolithically integrated, the connection region is made of a bulk waveguide made of an InGaAsP-based material and includes a semiconductor embedded tapered portion which is a connection portion with a waveguide core of the semiconductor laser; the semiconductor buried taper portion is buried with the insulating InP at a connection end face with the waveguide core of the semiconductor laser, and is buried with a buried layer burying the waveguide core of the optical modulator at a connection end face with the waveguide core of the optical modulator, and a tapered buried interface forms an angle of 45 degrees with respect to an optical axis direction of the bulk waveguide; the embedding layer is made of a polymer material; an optical transmitter comprising: a layer of the polymer material inserted in a lower clad with a gap between the bulk waveguide and the layer of the polymer material; and a layer of the polymer material inserted in an upper clad with a gap between the bulk waveguide and the layer of the polymer material, in the connection region excluding the semiconductor buried taper portion.

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