Ultra-wideband interconnect probes

Abstract

An ultra-wideband interconnection probe (100) connectable to a first access port of a first electronic device (101) and a second access port of a second electronic device (102), wherein the first access port comprises a first taper coupler (101a) and the second access port comprises a second taper coupler (102a), and the ultra-wideband interconnection probe (100) has a low cutoff frequency f in the microwave range or millimeter wave range. CL an ultra-wideband interconnection probe (100) comprising a dielectric waveguide structure (120) establishing a high-pass characteristic interconnection operating in a high frequency range starting from , wherein the dielectric waveguide structure (120) has a first tapered end (120a) connectable to the first access port via the first tapered coupler (101a) and a second tapered end (120b) connectable to the second access port via the second tapered coupler (102a).

Description

[Technical field]

[0001] The present invention relates to air This paper describes an ultra-wideband interconnect probe structure for signals that combines dielectric waveguide elements with metallic waveguide elements that can be fabricated on a variety of material substrates. The interconnect structure resulting from this combination provides ultra-wide bandwidth and has an operating frequency range of 0 Hz (DC :Direct Current ) to Terahertz wave It is possible to reach a range of 300 GHz to 3000 GHz or more. [Background technology]

[0002] So far, various interconnection standards for electrical signals have been defined and are used in the electronics industry in instrumentation test equipment for device and device characterization, and in a wide range of applications from communications to spectroscopy-based sensor systems. The Vector Network Analyzer (VNA) is the primary measurement platform for phase-sensitive measurements in electronics. VNAs provide the only platform with standardized industry-accepted calibration procedures to characterize the frequency response of electronic systems, ranging from low frequencies (a few kilohertz) to millimeter (MMW, 30 GHz to 300 GHz) and terahertz (THz, 300 GHz to 3000 GHz). VNAs operate in the frequency domain to measure the amplitude and phase of signals interfering with electronic devices, where both the transmitted and reflected signals are measured simultaneously and the frequency is swept through the measurement band to provide frequency-dependent data. The VNA system consists of a baseband unit (maximum frequency <67 GHz) mated to standardized coaxial connectors. These connectors allow the connection of frequency extension heads that allow the maximum frequency to be extended to higher frequencies using coaxial cables. Although significant advances have been made in the fabrication of monolithic microwave integrated circuits (MMICs), new developments to push the limits of current high frequency electrical interconnect technology to higher and higher frequencies are lacking.

[0003] This deficiency causes limitations in VNA broadband frequency extension heads that use a coaxial connector interface. Their more advanced versions can provide a frequency range from 0 Hz (DC) to 133 GHz ( Standard 1mm connector 0 Hz to 220 GHz (if using more advanced Standard 0.6mm connector The cost of these connectors ( Standard 1mm For connectors, 1 unit Apart from the high cost of construction (over 600 euros per connector), one of the main problems is that coaxial connectors reach their physical limits at the 0.6mm coaxial standard (this dimension given refers to the minimum inner diameter of the outer conductor). In order to further increase the maximum operating frequency, the size of the coaxial connectors themselves must be further reduced, which increases their fragility and directly affects the number of contacts that can be made. More serious are the problems regarding the repeatability of measurements, which are found even when these interconnections are performed by qualified personnel.

[0004] Other limitations arise when the VNA needs to perform measurements at frequencies above the maximum frequency of the coaxial standard. Frequency extension heads reaching the terahertz frequency range utilize standardized rectangular metal waveguide interconnects, and these interconnects specify various waveguide flange sizes that introduce significant limitations. The interconnect between the two flanges must be as close to perfect as possible, because in such short waveguides, any distortion in the flange connection can cause unwanted reflections that degrade the signal quality and reduce the signal power. This is more critical at THz, because smaller dimensions are required. As with coaxial connectors, the higher the frequency, the smaller the waveguide size. This also makes rectangular metal waveguides beyond the reach of regular industrial production at the current state of the art. However, the most significant limitation of rectangular metal waveguides is that the waveguide size determines the lower and upper cutoff frequency limits, slicing the spectrum into multiple frequency bands. As an example, the WR-2 standard operates from 325 to 500 GHz and has dimensions of 508 μm x 254 μm. These dimensions are reduced to 254 μm x 127 μm for the WR-1, which operates from 750 to 1100 GHz. These standards limit the frequency range in which devices operate to the sub-bands of the WR standard provided for them, which prevents the existence of systems or devices that can operate across various sub-bands. Furthermore, to take measures against the various WR standards, measurements must be made in each sub-band with an appropriate microwave extension head pair, which makes the measurements much more difficult and does not allow for calibration measurements across the entire frequency range.

[0005] The present invention is intended to overcome the aforementioned limitations of existing connection interfaces. Summary of the Invention

[0006] The present invention relates to a new type of interconnect probe for electrical signals that provides an uninterrupted ultra-wide operating frequency range, thereby extending the maximum frequency beyond the limits of current coaxial connector standards and into the terahertz range. wave The antenna is then coupled to a 100-GHz frequency band, providing enhanced signal transmission and reception over a wide frequency range and beyond. Additionally, the structure is versatile and can be used to interface with all of the current high frequency interconnect standards, be they coaxial or rectangular waveguide flange sizes, and act as a broadband transmitter / receiver antenna for frequencies within its operating range.

[0007] This disclosure demonstrates the versatility of this new electrical interconnect and describes the various interconnect scenarios that this novel structure enables, as well as the various configurations in which it can be arranged.

[0008] A first aspect of the present probe is that it comprises a dielectric waveguide structure with high-pass filter characteristics, thereby providing a low cutoff frequency (f CL The object of the present invention is to establish an electrical interconnection for signals having a frequency above 100 kHz. The dielectric waveguide has a portion, preferably rectangular, with a first tapered end connectable to an access port of a first electronic device, the access port comprising a first tapered coupler. The dielectric waveguide has a second tapered end connectable to an access port of a second electronic device, the access port comprising a second tapered coupler.

[0009] For example, dielectric waveguide structures offer low cutoff frequencies (f CL ), for example, starting at an operating frequency of 60 GHz, and can be designed to operate over a wide frequency range into the terahertz range (i.e., 300 to 3000 GHz) and beyond.

[0010] A second aspect of the present broadband interconnect probe is that it may further comprise a metallic waveguide structure having a low pass filter characteristic, which allows for establishing a metallic electrical contact between the access ports of two electronic devices, which allows the interconnect operating frequency range to start at a low frequency (i.e., preferably starting from DC, 0 Hz). This allows for a high cutoff frequency (f CH ) to allow electrical interconnection of signals.

[0011] For example, a metallic waveguide structure can be designed to operate in the millimeter wave range (i.e., operating frequencies from 30 GHz to 300 GHz, e.g., 100 GHz) starting at 0 Hz. In a preferred embodiment for broadband operation, the metallic waveguide structure operates in a frequency range starting at low frequencies (i.e., starting at DC, 0 Hz) and above the low cutoff frequency of the dielectric waveguide structure (f CH >f CL , e.g., above the 60 GHz in the previous example).

[0012] A third aspect of one example of the broadband interconnection probe is that the metallic waveguide structure can include at least one tapered coupler structure that fits into the tapered end of the dielectric waveguide, thereby providing at least one access port to the broadband interconnection probe. At the wider end of the tapered coupler is a metal contact between the metallic waveguide structure and the tapered coupler. This allows for the establishment of low frequency signal interconnections in the metallic waveguide structure and high frequency interconnections in the dielectric waveguide.

[0013] Dielectric and metallic waveguide structures can be used independently to establish interconnections within their operating frequency ranges, and the present disclosure further enables the combination of these two structures to achieve broadband operation of interconnect probes operating from DC (0 Hz) to the terahertz frequency range and beyond. [Brief description of the drawings]

[0014] For a better understanding of the above description and for the purpose of providing examples only, some non-limiting drawings are included which show practical embodiments in a schematic manner. [Figure 1A] An example of a proposed ultra-wideband probe structure comprising a dielectric waveguide and an interconnection between two electronic devices, each with an access port having a tapered coupler that matches the tapered end of the dielectric waveguide, is shown. [Figure 1B] An example of a proposed ultra-wideband probe structure comprising a dielectric waveguide and an interconnection between two electronic devices, each with an access port having a tapered coupler that matches the tapered end of the dielectric waveguide, is shown. [Figure 2A] 1 shows another example of the ultra-wideband interconnect probe proposed by the present invention for establishing an interconnection between two electronic devices, where a dielectric waveguide is attached to the substrate material. [Figure 2B] 1 shows another example of the ultra-wideband interconnect probe proposed by the present invention for establishing an interconnection between two electronic devices, where a dielectric waveguide is attached to the substrate material. [Figure 2C] 1 shows another example of the proposed ultra-wideband probe structure having a bifilar line design, comprising a dielectric waveguide structure attached to a substrate material on which a metallic waveguide structure is defined. [Figure 3A] 13 shows another example of a proposed ultra-wideband probe structure, comprising a dielectric waveguide structure attached to a substrate material, including a metal waveguide pattern defining a tapered coupler along a tapered end of the dielectric waveguide. [Figure 3B] 1 shows another example of the proposed ultra-wideband probe structure comprising a metal waveguide pattern defining a tapered coupler and a bifilar line terminated in a contact tip. [Figure 4A] 13 shows the associated electromagnetic elements of another proposed structure where the proposed ultra-wideband interconnect probe comprises a dielectric waveguide structure and a metallic waveguide pattern defining a tapered coupler. [Figure 4B]13 shows the associated electromagnetic elements of another proposed structure where the proposed ultra-wideband interconnect probe comprises a dielectric waveguide structure and a metallic waveguide pattern defining a tapered coupler. [Figure 4C] 13 shows the associated electromagnetic elements of another proposed structure where the proposed ultra-wideband interconnect probe comprises a metal waveguide pattern defining a tapered coupler and a bifilar line. [Figure 4D] 13 shows the associated electromagnetic elements of another proposed structure where the proposed ultra-wideband interconnect probe comprises a metal waveguide pattern defining a tapered coupler and a bifilar line. [Diagram 5] 4C and 4D show the distribution of simulated electric field amplitude at 10 GHz for the proposed structure shown in FIG. [Figure 6] 4C and 4D show the distribution of simulated electric field amplitude at 100 GHz for the proposed structure shown in FIG. [Figure 7] 4C and 4D show simulations of the S-parameters of the proposed structure between the access ports P1, P2. [Figure 8] 4C and 4D show the distribution of simulated electric field amplitude at 340 GHz (Terahertz wave range) for the proposed structure shown in FIG. [Figure 9A] The proposed structure of Figure 3B is shown connected to a rectangular metal waveguide reference. [Figure 9B] FIG. 9A shows the proposed structure of FIG. 3B connected to a different rectangular metal waveguide datum. [Figure 10A] Figure 2C shows the simulated electric field amplitude distribution of the proposed structure shown in Figure 2C coupled to a rectangular metal waveguide reference (WR-08, 140 GHz). [Figure 10B] FIG. 10A shows the simulated electric field amplitude distribution of the proposed structure shown in FIG. 2C coupled to a different rectangular metal waveguide reference (WR-04, 220 GHz). [Figure 11] 3C shows a 200 GHz simulated electric field amplitude distribution of the structure shown in FIG. 3A or FIG. 3B coupled to another dielectric structure. [Figure 12A] 3A or 3B acting as an antenna. [Figure 12B] 3C shows the radiation pattern of the proposed structure of FIG. 3A or FIG. 3B acting as an antenna. [Figure 13] 1 shows a narrow baseband access port to the proposed structure. [Figure 14] A simulation of the S-parameters of the proposed structure of FIG. 13 between access ports P1, P2, and P3, where P3 is a narrow baseband access port, is shown. [Figure 15] A wide baseband access port to the proposed structure is shown. [Figure 16] A simulation of the S-parameters of the proposed structure of FIG. 15 between access ports P1, P2, and P3 is shown, where P3 is the wide baseband access port. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] FIG. 1A shows a schematic overview of one example of the proposed ultra-wideband interconnect probe (100) connecting a first electronic device (101) located on a substrate (101b) and a second electronic device (102) located on a substrate (102b).

[0016] FIG. 1B shows a detailed view of the proposed ultra-wideband interconnect probe (100) with a dielectric waveguide structure (120). The dielectric waveguide structure (120) has a high-pass filter characteristic and a low cutoff frequency (f CL The dielectric waveguide structure (120) establishes an interconnection for high frequency range signals exceeding 101. 1. The dielectric waveguide structure (120) has a first tapered end (120a) connectable to a first access port (P1) of the electronic device (101). The dielectric waveguide structure (120) has a second tapered end (120b) connectable to a second access port (P2) of the second electronic device (102) via a second tapered coupler (102a) of the access port of the second electronic device (102).

[0017] In a preferred embodiment of this structure, the central part of the dielectric waveguide structure (120) has a rectangular shape and is terminated at an interconnect interface with a tapered portion or tapered end (120a), 1. the access port of the electronic device (101) is adapted to the first tapered end (120a) of the dielectric waveguide structure (120) 1. and has a tapered coupler (101a) structure. As shown in FIG. 1B, at the interconnect interface, 1. the electronic device (101) Based on on the plate (101b) 1. by bringing the dielectric waveguide structure (120) closer to the tapered coupler (101a), for high frequencies in the dielectric waveguide, 1. it becomes possible to establish an interconnection of the ultra-wideband interconnect probe (100) with the electronic device (101).

[0018] FIGS. 2A and 2B show an interconnect system comprising the proposed Ultra-wideband interconnects probe (100), Ultra-wideband interconnects where the probe (100) interconnects two electronic devices (101、102) or circuits The road to provide an ultra-broadband frequency interconnection, Ultra-wideband interconnects and the probe (100) further comprises a substrate (140) connected to the dielectric waveguide structure (120). In such an application example, the ultra-wideband interconnect probe (100) is used to interconnect a first electronic device (101) circuits The road to a second electronic device (102) circuits On the road connected to the dielectric waveguide structure (120). The probe (100) comprising the dielectric waveguide structure (120) establishes a high-pass Ultra-wideband interconnects characteristic interconnection, and this high-pass filter characteristic interconnection has the same shape at both ends, i.e., via the first tapered coupler (101a) shown in FIG. 2B, filter to a first tapered end (120a) connectable to the first access port of the electronic device (101), and via a second tapered coupler (102a), 1. to a second access port of the electronic device (101). SecondThe dielectric waveguide structure 120 has a second tapered end 120b that is connectable to a second access port of the electronic device 102. In this description, the tapered ends 120a, 120b of the dielectric waveguide structure 120 are symmetrical for simplicity, but this does not limit the various shapes for the dielectric waveguide structure 120 to those of the present disclosure.

[0019] For high frequency connections, this can be achieved by using a tapered end (120a) of the dielectric waveguide structure (120). 、120b ) and the metal patterns of the taper couplers (101a, 102a) of the electronic devices (101, 102) are established using a dielectric waveguide structure (120). As shown in Figure 2A, the dielectric waveguide (120) is depicted on a continuous substrate (140), which represents a dielectric waveguide support substrate followed by the electronic device substrate (101b).

[0020] FIG. 2C shows a detailed view of another example of the proposed ultra-wideband interconnect probe (100), in which a metal waveguide structure (110) is Made of metal A bifilar transmission line (110c) terminated with a probe tip (110c') is defined on the substrate (101b). 1. Access port of electronic device (101) 1. Establish metallic contact with the tapered coupler (101a), which provides a high cutoff frequency (f CH ) for signals with frequencies below filter A characteristic interconnection is established. The dielectric waveguide structure (120) has a high pass filter characteristic and a low cutoff frequency (f CL In another embodiment, the bifilar transmission line (110c) is Tapered slot antenna (hereinafter referred to as " TSA ") It can also be combined with (TSA-1a).

[0021] Since the connection established by the metallic waveguide structure (110) is used for low frequencies, the electrical and mechanical requirements of this interconnection are relaxed when compared to existing transmission line interconnections through two (ground-signal, GS) or three conductor (ground-signal-ground, GSG) contact probes. The dimensions of the contacts can be correspondingly larger (contact area on existing GSG probes is 12 μm×12 μm, compared to 500 μm×500 μm in the proposed design). The larger contact area allows for the Ultra Wideband It also allows for increased electrical bias power to be supplied to the device through the interconnect probes (100), which in turn reduces the risk of damage to the device after repeated interconnections or after poor use. Ultra Wideband Alignment and survivability of the interconnect probes (100) are facilitated.

[0022] For high frequency connections, this is done by using a dielectric waveguide structure (120) 1. The tapered end (120a) and the 1. Access port of electronic device (101) 1. This is established through near-field coupling between the taper coupler (101a).

[0023] FIG. 3A shows another example of the proposed ultra-wideband interconnect probe (300) comprising a dielectric waveguide structure (120) and a substrate (140), filter A dielectric waveguide structure (120) for establishing a characteristic interconnection has a first tapered end (120a) and Second Electronic Device (102) Second and a second tapered end (120b) connectable to the access port via a tapered coupler (102a).

[0024] Ultra-wideband interconnects The probe (300) has the shape of a taper coupler. 1. The metal waveguide structure defines a metal waveguide pattern (110a), and the tapered coupler is disposed around a first tapered end (120a) of a dielectric waveguide structure (120). T S A( TSA-1a), and Ultra-wideband interconnects RF to probe (300) (Radio Frequency) The RF access port (P) is air The second tapered end (120b) is a point at which a signal can be supplied or detected. Second Through the taper coupler (102a) Second It is connectable to an access port of the electronic device (102).

[0025] FIG. 3B shows a bifilar line that establishes an interconnection between the dielectric waveguide structure (120), the substrate (140), and the low pass filter characteristic. Made of metal a probe tip (110c'); 1. and a metal waveguide structure defining a metal waveguide pattern (110a), the low pass filter characteristic interconnect having a high cutoff frequency f in the millimeter wave range from DC. CH 1 shows a probe (300) operating in the low frequency range up to

[0026] 4A and 4B show high-pass filter A dielectric waveguide structure (120) that establishes a characteristic interconnection, filter The characteristic interconnect has a low cutoff frequency f in the microwave or millimeter wave range. CL Another ultra-wideband according to the present invention operates in the high frequency range starting from Interconnect The probe (200) is shown. Ultra-wideband interconnects Similar to the probe (100), the dielectric waveguide structure (120) comprises a first tapered end (120a) and a second tapered end (120b).

[0027] moreover, Ultra-wideband interconnects The probe (200) is a first access Port (P1) and the second access Between port (P2) and the high cutoff frequency f CH Low-pass filters operate in the low frequency range up to filter A metallic waveguide structure (110) is provided for establishing a characteristic interconnection.

[0028] Ultra-wideband interconnects The metal waveguide structure (110) of the probe (200) includes a first electronic A first metal waveguide pattern (110a) defining a first tapered coupler connectable to a device (101) (the first tapered coupler is disposed around a first tapered end (120a) of a dielectric waveguide structure (120)). T S A( TSA-1a) and a second electronic A second metal waveguide pattern (110b) defining a second taper coupler connectable to the device (102) (the second taper coupler is located around the second taper end (120b) and the substrate (140). T S A( Preferably, the TSA-1b) is a

[0029] FIG. 4C and FIG. 4D are Ultra Wideband Another embodiment of the interconnect probe (200) is shown in Figures 4C and 4D, which show a metal waveguide structure (110) with first and second metal waveguide patterns (110a, 110b), each pattern defining a taper coupler that is connected to a taper of a central dielectric waveguide structure (120). end( 120a, 120b) on both sides T S A、 (TSA-1a) and (TSA-1b) are preferred. The metal waveguide structure (110) is Made of metal A probe tip (110c') is provided. filter Further, the bifilar transmission line (110c) establishes a characteristic interconnection, filter The characteristic interconnect has a high cutoff frequency f from DC to mmWave range. CH It operates in the low frequency range up to 100 kHz. Ultra Wideband The interconnected probe (200) comprises a substrate (140) connected to a metallic waveguide structure (110) and a dielectric waveguide structure (120). The preferred excitation mode of this transmission line is: Ultra Wideband A single mode propagates throughout the interconnected probe (200). FIG. 4C shows a single mode excitation that allows realization of the Ultra WidebandShows details of the launcher section of the interconnect probe (200).

[0030] At the end of the ultra-wideband interconnect probe (200), a signal access port is provided, access ports (P1) and (P2) are points where electricity air can supply or detect signals . super To demonstrate the broadband characteristics of the broadband interconnect probe (200), First Access using port (P1), a signal is injected (transmitter port), Second Access using port (P2), signals interconnected using the proposed ultra-wideband interconnect probe (200) that behaves as a transmission line for a wide range of frequencies are observed (receiver port).

[0031] In one example, the dielectric constant of the stacked dielectric waveguide elements can be the same and they are processed within the same material. This does not limit the present disclosure where the dielectric materials of each layer may be different. In FIG. 4, the substrate (140) on which the first and second metal waveguide patterns (110a, 110b) are located may or may not be the same as that for the dielectric waveguide structure (120), but when the dielectric constant of the substrate is less than that of the dielectric waveguide structure (120), this structure transmits at much higher frequencies with lower insertion loss.

[0032] In the ultra-wideband interconnect probe (200) of FIG. 4C, the combination of the bifilar transmission line (110C) and the dielectric waveguide structure (120) enables the bifilar transmission line (110c) to expand the low-frequency range. Since the ability of the dielectric waveguide structure (120) to guide signals in the low-frequency range can be poor, the behavior of the proposed ultra-wideband interconnect probe (200) at low frequencies is dominated by the bifilar transmission line (110c). The behavior of this structure at low frequencies exhibits the electric field amplitude distribution shown in FIG. 5 for the proposed structures shown in FIGS. 4C and 4D at an operating frequency of 10 GHz. TSA A( TSA-1a, TSA-1b) are the characteristic impedances of the central bifilar transmission line (110c) at both ends access It adapts the characteristic impedance of ports (P1) and (P2) to maximize the transmission between them. When the signal frequency increases to the transition frequency range, the signal is transmitted through the near field to the TS A( The signal is coupled from the TSA-1a, TSA-1b) to a dielectric waveguide structure (120). Figure 6 illustrates this situation, where the electric field amplitude distribution at 100 GHz is presented for the proposed structures shown in Figures 4C and 4D as the signal travels through the dielectric waveguide structure.

[0033] In one embodiment, the proposed ultra-wideband interconnect probe (200) comprising the first and second metallic waveguide patterns (110a, 110b) and the tapered ends (120a, 120b) of the dielectric waveguide structure (120) can be implemented as an antenna, thereby defining the phase center of the radiated electromagnetic wave at each frequency and TS A( It is possible to optimize the coupling between the metal waveguide structures that define TSA-1a) and (TSA-1b) and the respective dielectric waveguide tapered ends (120a) and (120b). For ultra-broadband operation, the phase centers of the electromagnetic waves on both structures must overlap at all frequencies in the operating range. This can be achieved by using the same type of tapering profile for both structures, the first and second metal waveguide patterns (110a, 110b) and the dielectric waveguide structure (120). A linear profile is used for both structures, i.e., the first and second metal waveguide patterns (110a, 110b) and the respective dielectric waveguide tapered ends (120a, 120b). This is the preferred embodiment for simplicity and coupling with the same aperture angle. However, the present disclosure is not limited to this profile and other structures can be considered, including the case where different ports can have different tapering profiles.

[0034] In other embodiments, the proposed ultra-wideband interconnect probes (100, 200) comprising the first and second metal waveguide patterns (110a, 110b) and the tapered ends (120a, 120b) of the dielectric waveguide structure (120) can be implemented as near-field couplers.

[0035] Considering the wide bandwidth, the ultra-wideband interconnect probes (100, 200) have high power at high frequencies, which enables higher-order modes to propagate through the structure. An additional advantage is achieved by a configuration in which the phase centers of the electromagnetic waves overlap at all frequencies, suppressing or at least reducing the excitation of higher-order modes. When multimode propagation occurs, signal drop in transmission appears due to the weakening interference between modes that propagate at different speeds and introduce dispersion. FIG. 7 shows the Ultra-wideband interconnects simulated S-parameters of the probe (200), where S12 and S21 represent access transmission between ports (P1), (P2). As shown, these parameters are near 0 dB with no drop, indicating lossless (or nearly lossless) transmission in a single fundamental mode. Thus, in the proposed ultra-wideband interconnect probe (200), the above higher-order modes can be reduced, which can be evaluated by non-null S-parameter representations (i.e., the parameter amplitudes S12 and S 21 ) close to 0 dB in FIG. 7). The amplitudes of S11 and S22 expressed in dB are desirably as low as possible.

[0036] The results shown in FIG. 7 for the ultra-wideband interconnect probe (200) were simulated in narrow frequency steps to exclude the narrowband transmission null from 10 MHz to 180 GHz. Due to the computational costs involved, discrete frequency points are shown above 180 GHz to demonstrate the broadband operating frequency range of the structure (marker m2 at 220 GHz, marker m3 at 260 GHz, marker m4 at 300 GHz, and a dot at 340 GHz). Clearly, at 340 GHz, the fundamental mode still dominates, which is why FIG. 8 shows that the proposed structure shown in FIGS. 4C and 4D has a fundamental mode at 340 GHz (THz). wave 8 shows the distribution of simulated electric field amplitudes in the logarithmic amplitude range. Specifically, FIG. 8 shows a detail of the central part of the ultra-wideband interconnect probe (200). It can be seen how most of the power can travel in a single fundamental path inside the dielectric waveguide structure (120). Accordingly, the highest cutoff frequency of this structure was not reached in the simulation, but was in the terahertz range. wave It can be demonstrated that the scope of the invention is extended to

[0037] 7 highlights the frequency range of 5 GHz to 20 GHz, which in this example is the transitional frequency band, where the ultra-wideband interconnect probe (200) operates as a bifilar transmission line (110c) and dielectric waveguide structure (120), exhibiting 1 dB to 1.5 dB insertion loss and significant ripple due to the overlap of the ultra-wideband interconnect probe (200).

[0038] Disclosure Ultra Wideband Other advantages of the interconnection probe stem from the extremely wide and uninterrupted operating frequency range of the proposed ultra-wideband interconnection probe and its ability to establish interconnections with multiple rectangular and circular waveguide connectors, including the IEEE standard for rectangular waveguides. Figures 9A and 9B show the proposed ultra-wideband interconnection probe shown in Figure 3B. Super It shows how a broadband interconnect probe (100) can be used to connect to two different rectangular waveguide reference flange sizes, and the proposed SuperThe insertion depth of the dielectric waveguide structure into the rectangular waveguide is adapted according to the flange size without any modification of the broadband interconnect probe (100) and without any additional loss. 1. The tapered end (120a) initiates a fundamental mode in the connector into the rectangular waveguide. Therefore, in the proposed ultra-wideband interconnect probe (100), the dielectric waveguide structure (120) Tapered End (120a, 120b) can be mechanically inserted into the apertures of the rectangular waveguides (W1, W2) to couple to the propagating field. In this scenario, the operating frequency band may be determined by the rectangular waveguide standard rather than the ultra-wideband interconnected probe (100). This interconnection can be achieved using various configurations of the proposed structure (100). Figures 12A and 12B show the distribution of simulated electric field amplitude for the same structure coupled to a WR-8 (W1 in Figure 9A) at 140 GHz and a WR-4 (W2 in Figure 9B) at 220 GHz.

[0039] Another advantage relates to the proposed ultra-wideband interconnection probe (100) being able to couple signals to other dielectric structures. Unlike coaxial cables and rectangular waveguides, the electromagnetic fields propagating in the proposed ultra-wideband interconnection probe (100) are not confined therein, so the dielectric waveguide structure (120) can be used for near-field coupling to other dielectric structures. As an example, FIG. 11 shows a 200 GHz simulated electric field amplitude distribution at the end of the dielectric waveguide structure (120) shown in FIG. 3A or FIG. 3B, coupling an electromagnetic signal into a toroidal dielectric resonator (1200) to generate whispering gallery modes (WGMs) within the structure.

[0040] Another advantage relates to the proposed ultra-wideband interconnection probe (100, 200) being able to radiate electromagnetic waves propagating in the ultra-wideband interconnection probe into air as a free space antenna. Figure 12A shows the proposed structure of Figure 3A or Figure 3B functioning as an antenna used as a prototype of a dielectric waveguide antenna optimized at 150 GHz in both transmission and reception scenarios. Figure 12B shows the radiation pattern of the proposed structure of Figure 3A or Figure 3B functioning as the illustrated antenna at 150 GHz. Since the signal is radiated in a single main lobe, it can be integrated into a radio frequency optical system with spatial directivity of the beam.

[0041] Considering the ultra-wideband interconnect probe (100, 200) as an antenna, it instantly enables a transmitter or receiver device to be deployed and the TS of the first metallic waveguide pattern (110a) of the ultra-wideband interconnect probe (100, 200) A A transmitter (e.g., an optical mixer) or receiver (e.g., a Schottky diode) device is added to the antenna. 1. Access port (P1) and for receiver Second A point source at the access port (P2) (FIGS. 4A, 4B) is assumed. In one possible embodiment, on the transmitter side (FIG. 13), the TS of the first metal waveguide pattern (110a) is A At the apex As an access port Photodiode (P 1 ) is placed.

[0042] If the device requires a DC bias, a solution is shown to make the necessary connections using high impedance lines that provide baseband signal access. The bandwidth of this baseband can be optimized for a direct detection receiver. In Fig. 13, an additional (preferably low dielectric constant) microwave substrate (140) is used. An ultra-wideband interconnect probe (200) without a bifilar transmission line (110c) is shown. The photodiode is illuminated by an optical fiber that is not shown in the image. Using optical modulation techniques, it is possible to transmit broadband signals using this structure.

[0043] Figure 14 shows a simulation of the S-parameters of the proposed structure of Figure 13 between the access ports P1, P2, and P3, where P3 is a narrow baseband access port. Specifically, Figure 14 shows the magnitude (dB) of the S-parameters obtained from the simulation, S 31 , S23, and S21 are access Represents transmission between ports (P1, P2, P3). access Port (P 3 ) (e.g., DC power supply) and (P 1 )( for example, The transmission between the 1000MHz and 1000MHz photodiodes (S 31 =0 dB). A radio frequency connection (P 1 to P2) occurs for frequencies above 55 GHz (S23 close to 0 dB). 3 ) and the remote receiver (P2).

[0044] When used as a receiver, the ultra-wideband interconnect probe (100, 200) incorporates a Schottky zero bias diode (ZBD) envelope detector or other type of receiver element (P 1) The Schottky ZBD allows detection of the received baseband signal through the bias connection, with the baseband bandwidth being, for example, 0 to 600 MHz.

[0045] In order to increase the baseband bandwidth in a transmitter or receiver configuration, an ultra-wideband interconnection probe (100) with a wide baseband access port is proposed in FIG. 15, in which a third metal waveguide pattern (110d) defining a third taper coupler, preferably an additional TS A( A dielectric waveguide structure (120) having a first tapered end (120a) is placed on the microwave substrate (140) and surrounds the first tapered end (120a) of the dielectric waveguide structure (120), which is access Electrically connect to the first TSA (TSA-1a) that ensures the connection between ports (P1) and (P3). A( The arms of the TSA-1a, TSA-2a) are electrically connected at their ends (e.g., through conductive ink, conductive epoxy, wire bonding, or other forms that allow electrical connection between the metals of different layers). In realizing the structure shown in FIG. 15, an ultra-broadband CPS-CPW transition operating in the band from 0 Hz to 50 GHz is included. This transition consists of a conductive bridge (160) that joins one of the metals in the CPS line to the conductor center of the CPW line. It is pointed out that any waveguide transition between various waveguide structures that couple to the metal waveguide structure (110) can be made possible.

[0046] In this design, Second Access The port (P2) is connected to the dielectric waveguide structure (120) (or the bifilar line (110c)). 1 The source of the microwave signal (generally a modulated carrier, and therefore of a particular bandwidth) arrives at the diode located at (TSA-2a), the ultra-wideband interconnect probe (100) performs a baseband conversion of the modulated signal. The baseband signal is passed through (TSA-2b), the CPS line, and the CPS-CPW transition. access Port (P 3) is sent to the (P1) source. Figure 16 shows the S-parameters of the proposed structure of Figure 15 between the access ports P1, P2, and P3, where P3 is the wide baseband access port. In this embodiment, the (P2) source is sent to the (P 1 ) Diode with low loss transmission (S2 close to 0dB) 1 ) can be seen. The baseband port (P 3 ) diode connection (P 1 )(S 31 ) achieves a bandwidth of 24.5 GHz at a level of -6 dB. The isolation between the source and baseband ports (S 32 ) is better than 15 dB at most of the frequencies considered, and better than 10 dB in the frequency range from 60 GHz to 70 GHz.

Claims

1. An ultra-wideband interconnect probe (100) for connecting first and second electronic devices (101, 102), comprising: The first electronic device (101) comprises a first access port (P1) having a first taper coupler (101a), and the second electronic device (102) comprises a second access port (P2) having a second taper coupler (102a); The ultra-wideband interconnect probe (100) is connectable to the first and second access ports (P1, P2) and has a low cut-off frequency f in the microwave or millimeter wave range. ＣＬ a dielectric waveguide structure (120) that establishes a high-pass filter characteristic interconnection operating in a high frequency range beginning at The dielectric waveguide structure (120) comprises: a first tapered end (120a) connectable to the first access port (P1) via the first tapered coupler (101a); and a second tapered end (120b) connectable to the second access port (P2) via the second tapered coupler (102a); Equipped with The first taper coupler (101a) is composed of a first metal pattern having a taper slot with a linear taper profile, and the first taper end (120a) is arranged in the taper slot of the first metal pattern such that phase centers of electromagnetic waves of the first metal pattern and the first taper end (120a) overlap at all frequencies within an operating range; the second taper coupler (102a) is made of a second metal pattern having a taper slot with a linear taper profile, and the second taper end (120b) is disposed in the taper slot of the second metal pattern such that phase centers of electromagnetic waves of the second metal pattern and the second taper end (120b) overlap at all frequencies within an operating range; An ultra-wideband interconnect probe (100).

2. The ultra-wideband interconnect probe (100) of claim 1, wherein the dielectric waveguide structure (120) has a rectangular section with a rectangular cross section.

3. Further comprising a substrate (140) attached to the dielectric waveguide structure (120). The ultra-wideband interconnect probe (100) of claim 1 or 2.

4. The method further comprises the steps of: providing a metal transmission line structure (110) on the substrate (140); the metal transmission line structure (110) comprising: The probe has a metallic probe tip at each end connected to the first taper coupler and the second taper coupler, and has a frequency range from DC to a high cutoff frequency f ＣＨ a bifilar transmission line (110c) establishing a low-pass filter characteristic interconnection operating in a low frequency range up to The ultra-wideband interconnect probe (100) of claim 3.

5. An ultra-wideband interconnect probe (300) for connection to an electronic device (102) having an access port (P2) with a taper coupler (102a), The ultra-wideband interconnection probe (300) is connectable to the access port (P2) and has a low cut-off frequency f in the microwave or millimeter wave range. ＣＬ A dielectric waveguide structure (120) for establishing a high pass filter characteristic interconnection operating in a high frequency range starting from A first tapered end (120a), and a second tapered end (120b) connectable to the access port (P2) of the electronic device (102) via the tapered coupler (102a); A dielectric waveguide structure (120) comprising: a substrate (140) attached to the dielectric waveguide structure (120); A metal transmission line structure (110) on the substrate (140); It is equipped with the metal transmission line structure (110) comprises a metal transmission line pattern (110a) defining a tapered coupler capable of functioning as a tapered slot antenna "TSA" (TSA-1a) around the first tapered end (120a) of the dielectric waveguide structure (120), the tapered coupler defining an access port (P); The metal transmission line pattern (110a) is provided with a tapered slot having a linear tapered profile, and the first tapered end (120a) is disposed in the tapered slot such that phase centers of electromagnetic waves of the metal transmission line pattern (110a) and the first tapered end (120a) overlap at all frequencies within an operating range. An ultra-wideband interconnect probe (300).

6. The metal transmission line structure (110) has a metallic probe tip (110c') and is adapted to transmit a signal from DC to a high cutoff frequency f in the mm-wave range. ＣＨ a bifilar transmission line (110c) establishing a low-pass filter characteristic interconnection operating in a low frequency range up to The ultra-wideband interconnect probe (300) of claim 5.

7. A rectangular waveguide; An ultra-wideband interconnect probe (300) according to claim 5 or 6; An interconnection system comprising:

8. A low cutoff frequency f in the microwave or millimeter wave range ＣＬ A dielectric waveguide structure (120) for establishing a high pass filter characteristic interconnection operating in a high frequency range starting from A first tapered end (120a), and Second tapered end (120b) A dielectric waveguide structure (120) comprising: DC to high cutoff frequency f in the millimeter wave range ＣＨ A metal transmission line structure (110) for establishing a low pass filter characteristic interconnection operating in a low frequency range up to a first metal transmission line pattern (110a) defining a first tapered coupler that can function as a tapered slot antenna "TSA" (TSA-1a) around said first tapered end (120a); and A second metallic transmission line pattern (110b) defining a second tapered coupler that can function as a tapered slot antenna "TSA" (TSA-1b) around said second tapered end (120b). a metal transmission line structure (110) comprising: a substrate (140) connected to the metal transmission line structure (110) and the dielectric waveguide structure (120); It is equipped with The first metal transmission line pattern (110a) is provided with a tapered slot having a linear tapered profile, and the first tapered end (120a) is disposed in the tapered slot of the first metal transmission line pattern (110a) such that phase centers of electromagnetic waves of the first metal transmission line pattern (110a) and the first tapered end (120a) overlap at all frequencies within an operating range; the second metal transmission line pattern (110b) is provided with a tapered slot having a linear tapered profile, and the second tapered end (120b) is disposed in the tapered slot of the second metal transmission line pattern (110b) such that phase centers of electromagnetic waves of the second metal transmission line pattern (110b) and the second tapered end (120b) overlap at all frequencies within an operating range; An ultra-wideband interconnect probe (200).

9. the metal transmission line structure (110) further comprises a third metal transmission line pattern (110d) defining a third tapered coupler that can function as a tapered slot antenna "TSA" (TSA-2a) for ultra-wide baseband operation around the first tapered end (120a), the tapered slot antenna "TSA" (TSA-1a) and the tapered slot antenna "TSA" (TSA-2a) being electrically connected; The ultra-wideband interconnect probe (200) of claim 8.

10. The metal transmission line structure (110) has at least two metallic probe tips (110c') and is adapted to transmit a signal from DC to a high cutoff frequency f in the mm-wave range. ＣＨ 10. The ultra-wideband interconnect probe (200) of claim 8 or 9, further comprising a bifilar transmission line (110c) establishing a low pass filter characteristic interconnection operating in said low frequency range up to 10 GHz.

11. An antenna comprising an ultra-wideband interconnect probe (100, 200, 300) according to any one of claims 1 to 10.

12. A near-field coupler comprising an ultra-wideband interconnect probe (100, 200, 300) according to any one of claims 1 to 10.

13. An ultra-wideband interconnect probe (100, 200, 300) according to any one of claims 1 to 10, Transmitter and A signal transmitter device comprising:

14. The signal transmitter device of claim 13 , wherein the transmitter comprises an optoelectronic transducer (i.e., a photodiode, a photoconductive antenna, etc.).

15. An ultra-wideband interconnect probe (100, 200, 300) according to any one of claims 1 to 10, Receiver and A signal receiver device comprising:

16. 16. The signal receiver device of claim 15, wherein the receiver comprises a Schottky zero-bias diode (ZBD) envelope detector.

17. a first electronic device (101) having a first access port with a first taper coupler (101a); a second electronic device (102) having a second access port with a second taper coupler (102a); An ultra-wideband interconnect probe (100) according to any one of claims 1 to 4; An interconnection system comprising:

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