SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD

Abstract

To provide a substrate processing apparatus that can improve the recovery ratio of a process liquid while smoothly carrying out the concentration adjustment of the process liquid in a recovery tank.SOLUTION: A substrate processing apparatus 500 comprises a recovery pipeline Q2, a recovery tank TR, a discharge pipeline Q1, an inhibition part 15, and a control part U21. A process liquid scattering from a substrate W flows into the recovery pipeline Q2. The recovery tank TR recovers the process liquid through the recovery pipeline Q2. A rinsing liquid scattering from the substrate W flows into the discharged pipeline Q1 during a first period T1 in which after the supply of the process liquid to the substrate W is stopped, the rinsing liquid is supplied to the substrate W. The inhibition part 15 is capable of inhibiting the rinsing liquid from flowing into the recovery pipeline Q2. The control part U21 controls the inhibition part 15 so that flow of the rinsing liquid into the recovery pipeline Q2 is inhibited during the first period T1. During a part of or whole of the first period T1, a passage of the recovery pipeline Q2 is open.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method. [Background technology]

[0002] The substrate processing apparatus described in Patent Document 1 includes a recovery system and a drainage system.

[0003] The recovery system includes a processing cup, a recovery pipe, and a recovery valve. The processing cup receives the phosphoric acid aqueous solution splashed from the substrate. The recovery pipe guides the phosphoric acid aqueous solution received by the processing cup to the phosphoric acid tank. The recovery valve opens and closes the recovery pipe. The drainage system includes a drainage pipe and a drainage valve. The drainage pipe is connected to the recovery pipe upstream of the recovery valve. The drainage valve opens and closes the drainage pipe.

[0004] Specifically, when the recovery valve is open and the drain valve is closed, the phosphoric acid solution received by the processing cup is recovered in the phosphoric acid tank by the recovery pipe, and when the recovery valve is closed and the drain valve is open, the phosphoric acid solution received by the processing cup is discharged through the recovery pipe to the drain pipe.

[0005] Furthermore, in the substrate processing apparatus described in Patent Document 1, a rinsing liquid supplying step is performed after the phosphoric acid supplying step, so that the phosphoric acid solution on the substrate is washed away by the rinsing liquid. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2018-182228 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, in the substrate processing apparatus described in Patent Document 1, when the rinsing liquid is discharged through the recovery pipe and the drain pipe used for discharging the phosphoric acid aqueous solution, there is a possibility that a sufficient time for recovering the phosphoric acid aqueous solution cannot be secured because the rinsing liquid supplying step is performed immediately after the phosphoric acid supplying step.

[0008] If a sufficient time is not ensured for recovering the phosphoric acid aqueous solution, the recovery rate of the phosphoric acid aqueous solution will be low. Therefore, it is desired to improve the recovery rate of the phosphoric acid aqueous solution.

[0009] In particular, for example, a highly viscous treatment liquid such as an aqueous phosphoric acid solution and a mixed solution of sulfuric acid and hydrogen peroxide (SPM) takes longer to recover due to gravity (recovery due to the weight of the treatment liquid) than a treatment liquid with a low viscosity.

[0010] In addition, if the phosphoric acid solution is recovered with a rinse solution for a sufficient time in order to increase the recovery rate of the phosphoric acid solution, not only the phosphoric acid solution but also an unexpected amount of rinse solution will flow into the phosphoric acid tank. As a result, it may become difficult to adjust the concentration of the phosphoric acid solution in the phosphoric acid tank (recovery tank).

[0011] The present invention has been made in consideration of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method that can improve the recovery rate of the processing liquid while smoothly adjusting the concentration of the processing liquid in the recovery tank. [Means for solving the problem]

[0012] According to one aspect of the present invention, a substrate processing apparatus supplies a processing liquid to a substrate and processes the substrate with the processing liquid. The substrate processing apparatus includes a substrate holding unit, a recovery pipe, a recovery tank, a discharge pipe, a prohibition unit, and a control unit. The substrate holding unit holds and rotates the substrate. The processing liquid scattered from the rotating substrate flows into the recovery pipe. The recovery tank is connected to the recovery pipe and recovers the processing liquid through the recovery pipe. The rinsing liquid scattered from the rotating substrate flows into the discharge pipe during a first period in which a rinsing liquid is supplied to the rotating substrate after the supply of the processing liquid to the substrate is stopped. The prohibition unit is capable of prohibiting the rinsing liquid from flowing into the recovery pipe. The control unit controls the prohibition unit to prohibit the rinsing liquid from flowing into the recovery pipe during the first period. A flow path of the recovery pipe is opened during a part or the entirety of the first period. The prohibition unit includes a first guard and a second guard. The first guard is disposed along the circumferential direction of the substrate holding part. The second guard is disposed along the circumferential direction of the substrate holding part at a position different from that of the first guard. The first guard receives the rinse liquid splashed from the substrate during the first period and guides the rinse liquid to the discharge pipe. The second guard receives the rinse liquid splashed from the substrate during a second period that is a period before the first period and guides the rinse liquid to the recovery pipe. The flow path of the recovery pipe is open during part or all of the second period. The second guard receives the treatment liquid splashed from the substrate during a treatment period in which the substrate is treated with the treatment liquid and during a shake-off period in which the treatment liquid is shaken off from the substrate after the treatment period and guides the treatment liquid to the recovery pipe. The treatment liquid includes a phosphoric acid liquid.

[0013] In the substrate processing apparatus of the present invention, the recovery pipe and the discharge pipe are separate pipes of different series.

[0014] In the substrate processing apparatus of the present invention, the first guard inhibits the rinsing liquid from flowing into the recovery pipe during the first period.

[0015] In the substrate processing apparatus of the present invention, during the second period in which the rinsing liquid is being supplied to the rotating substrate after the processing liquid has been supplied to the substrate, the first guard does not receive the rinsing liquid splashed from the substrate and does not inhibit the rinsing liquid from flowing into the recovery pipe. The second period is a period that follows the first period and includes a time when the supply of the rinsing liquid to the substrate starts.

[0016] In the substrate processing apparatus of the present invention, the control unit controls the rotation speed of the substrate holding unit so that the rotation speed of the substrate when switching from a state in which the second guard receives the rinsing liquid in the second period to a state in which the first guard receives the rinsing liquid in the first period is smaller than the rotation speed of the substrate in the first period.

[0017] In the substrate processing apparatus of the present invention, the second period is a period that is continuous with the first period, is shorter than the first period, and includes a time point at which the supply of the rinsing liquid to the substrate starts.

[0018] In the substrate processing apparatus of the present invention, the supply of the processing liquid to the substrate is stopped during the shaking-off period.

[0019] In the substrate processing apparatus of the present invention, the rotation speed of the substrate during the shake-off period is higher than the rotation speed of the substrate during the processing period. Furthermore, the shake-off period may be a period before the second period. A rotation speed of the substrate during the shake-off period may be higher than a rotation speed of the substrate during the processing period and a rotation speed of the substrate during the second period. Furthermore, the control unit may control the rotation speed of the substrate holding unit after the shake-off period has elapsed and before the second period, so that the rotation speed is smaller than the rotation speed of the substrate during the shake-off period.

[0020] According to another aspect of the present invention, a substrate processing method is performed by a substrate processing apparatus that supplies a processing liquid to a substrate to process the substrate with the processing liquid. The substrate processing apparatus includes a recovery pipe, a recovery tank connected to the recovery pipe, a discharge pipe, a substrate holding part that holds and rotates the substrate, a first guard disposed circumferentially around the substrate holding part, and a second guard disposed circumferentially around the substrate holding part at a position different from the first guard. The substrate processing method includes the steps of: supplying the processing liquid to the rotating substrate to process the substrate; recovering the processing liquid scattered from the substrate in the recovery tank through the recovery pipe; supplying a rinsing liquid to the rotating substrate after the processing liquid is supplied to the substrate; prohibiting the inflow of the rinsing liquid into the recovery pipe during a first period during which the rinsing liquid is supplied to the substrate; discharging the rinsing liquid through the discharge pipe during the first period; and receiving the rinsing liquid scattered from the substrate and supplying the rinsing liquid to the recovery pipe during a second period that is a period before the first period, with the second guard. The flow path of the recovery pipe is open during part or all of the first period. In the step of prohibiting the inflow of the rinsing liquid, the first guard receives the rinsing liquid scattered from the substrate during the first period and supplies the rinsing liquid to the discharge pipe, and the flow path of the recovery pipe is open during part or all of the second period. The second guard receives the processing liquid scattered from the substrate during a processing period in which the substrate is processed with the processing liquid and during a shaking-off period in which the processing liquid is shaken off from the substrate after the processing period, and guides the processing liquid to the recovery pipe. The processing liquid includes a phosphoric acid liquid. Furthermore, the shake-off period may be a period before the second period. A rotation speed of the substrate during the shake-off period may be higher than a rotation speed of the substrate during the processing period and a rotation speed of the substrate during the second period. Furthermore, the control unit may control the rotation speed of the substrate holding unit after the shake-off period has elapsed and before the second period, so that the rotation speed is smaller than the rotation speed of the substrate during the shake-off period.

[0021] According to yet another aspect of the present invention, a semiconductor manufacturing method includes processing semiconductor substrates with a substrate processing apparatus to manufacture a semiconductor, which is the processed semiconductor substrate, The substrate processing apparatus includes a recovery pipe, a recovery tank connected to the recovery pipe, a discharge pipe, a substrate holding part that holds and rotates the semiconductor substrate, a first guard disposed circumferentially around the substrate holding part, and a second guard disposed circumferentially around the substrate holding part at a position different from the first guard. The semiconductor manufacturing method includes the steps of: supplying a processing liquid to the rotating semiconductor substrate to process the semiconductor substrate; recovering the processing liquid scattered from the semiconductor substrate in the recovery tank through the recovery pipe; supplying a rinsing liquid to the rotating semiconductor substrate after the processing liquid is supplied to the semiconductor substrate; inhibiting the rinsing liquid from flowing into the recovery pipe during a first period during which the rinsing liquid is supplied to the semiconductor substrate; discharging the rinsing liquid through the discharge pipe during the first period; and receiving the rinsing liquid scattered from the semiconductor substrate and supplying the rinsing liquid to the recovery pipe by the second guard during a second period that is a period prior to the first period. During part or all of the first period, a flow path of the recovery pipe is open. In the step of prohibiting the inflow of the rinsing liquid, the first guard receives the rinsing liquid scattered from the semiconductor substrate during the first period and supplies the rinsing liquid to the discharge pipe, and the flow path of the recovery pipe is open during part or all of the second period. The second guard receives the processing liquid scattered from the substrate and guides the processing liquid to the recovery pipe during a processing period in which the substrate is processed with the processing liquid and a shaking-off period in which the processing liquid is shaken off from the substrate after the processing period. The processing liquid includes a phosphoric acid liquid. A rotation speed of the semiconductor substrate during the shake-off period may be higher than a rotation speed of the semiconductor substrate during the processing period and a rotation speed of the semiconductor substrate during the second period. Effect of the Invention

[0022] According to the present invention, it is possible to improve the recovery rate of the treatment liquid while smoothly adjusting the concentration of the treatment liquid in the recovery tank. [Brief description of the drawings]

[0023] [Figure 1] 1 is a plan view showing a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 2] 1 is a diagram showing the inside of a substrate processing apparatus according to a first embodiment. [Diagram 3] 5 is a time chart showing a recovery operation of a processing liquid by the substrate processing apparatus according to the first embodiment. [Figure 4] FIG. 1A is a diagram showing a process of recovering a processing liquid during a processing period using the processing liquid in the substrate processing apparatus according to embodiment 1. FIG. 1B is a diagram showing a process of recovering a processing liquid during a first period for a rinsing process in the substrate processing apparatus according to embodiment 1. [Diagram 5] 1 is a flowchart showing a substrate processing method according to the first embodiment. [Figure 6] 10 is a time chart showing a recovery operation of a processing liquid by the substrate processing apparatus according to the second embodiment of the present invention. [Figure 7] 1A is a diagram showing a process of recovering a processing liquid during a processing period using the processing liquid in a substrate processing apparatus according to a comparative example, and FIG. 1B is a diagram showing a process of recovering a processing liquid during a period in which the processing liquid is shaken off in the substrate processing apparatus according to the comparative example. [Figure 8] 1A is a diagram showing a process of recovering a processing liquid in an initial period of a rinsing process in the substrate processing apparatus of the comparative example, and FIG. 1B is a diagram showing a process of discharging a rinsing liquid in the substrate processing apparatus of the comparative example. [Figure 9] 1A is a diagram showing a process of recovering a processing liquid during a processing period using the processing liquid in the substrate processing apparatus according to embodiment 2. FIG. 1B is a diagram showing a process of recovering a processing liquid during a processing liquid shake-off period in the substrate processing apparatus according to embodiment 2. [Figure 10] 1A is a diagram showing a process of recovering a processing liquid in a second period for a rinsing process in the substrate processing apparatus according to embodiment 2. FIG. 1B is a diagram showing a process of recovering a processing liquid in a first period for a rinsing process in the substrate processing apparatus according to embodiment 2. [Figure 11]10 is a flowchart showing a part of a substrate processing method executed by the substrate processing apparatus according to the second embodiment. [Figure 12] 10 is a flowchart showing another part of the substrate processing method executed by the substrate processing apparatus according to the second embodiment. [Figure 13] FIG. 11 is a diagram showing a preferred configuration of a substrate processing apparatus according to the second embodiment. [Figure 14] 13(a) to 13(f) are views for explaining a change in the flow of a processing liquid in a substrate processing apparatus according to a second embodiment. [Figure 15] 10 is a time chart showing the timing of recovery of phosphoric acid solution by the first recovery tank and the second recovery tank according to the second embodiment. [Figure 16] FIG. 11 is a diagram showing the inside of a substrate processing apparatus according to a third embodiment of the present invention. [Figure 17] 1A is a diagram showing a process of recovering a processing liquid during a processing period using the processing liquid in the substrate processing apparatus according to embodiment 3. FIG. 1B is a diagram showing a process of recovering a processing liquid during a first period for a rinsing process in the substrate processing apparatus according to embodiment 3. [Figure 18] 10(a) is a diagram showing a process of recovering a processing liquid during a processing period using the processing liquid in the substrate processing apparatus according to the fourth embodiment of the present invention, and FIG. 10(b) is a diagram showing a process of recovering a processing liquid during a period in which the processing liquid is shaken off in the substrate processing apparatus according to the fourth embodiment. [Figure 19] 10A is a diagram showing a process of recovering a processing liquid in a second period for a rinsing process in the substrate processing apparatus according to embodiment 4. FIG. 10B is a diagram showing a process of recovering a processing liquid in a first period for a rinsing process in the substrate processing apparatus according to embodiment 4. [Figure 20] 1A is a diagram showing the amount of phosphoric acid solution drained in a substrate processing apparatus according to a comparative example, and FIG. 1B is a diagram showing the amount of phosphoric acid solution drained in a substrate processing apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference characters and the description will not be repeated. In the embodiment of the present invention, the X-axis, Y-axis, and Z-axis are mutually orthogonal, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0025] (Embodiment 1) A substrate processing apparatus 500 according to a first embodiment of the present invention will be described with reference to Fig. 1 to Fig. 4. First, the substrate processing apparatus 500 will be described with reference to Fig. 1. Fig. 1 is a plan view showing the substrate processing apparatus 500. The substrate processing apparatus 500 supplies a processing liquid to a substrate W and processes the substrate W with the processing liquid. Specifically, the substrate processing apparatus 500 is a single-wafer type that processes substrates W one by one. The substrate W is substantially disk-shaped.

[0026] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell.

[0027] 1, the substrate processing apparatus 500 includes a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of processing apparatuses U1, and a control device U2. The substrate processing apparatus 500 may include a single processing apparatus U1.

[0028] The control device U2 controls the load port LP, the indexer robot IR, the center robot CR, and the multiple processing devices U1. The control device U2 includes a control unit U21 and a memory unit U22. The control unit U21 includes a processor such as a CPU (Central Processing Unit). The memory unit U22 includes a storage device and stores data and computer programs. Specifically, the memory unit U22 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory, a solid state drive, and / or a hard disk drive. The memory unit U22 may include removable media.

[0029] Specifically, in the control device U2, the processor of the control unit U21 executes a computer program stored in the storage device of the memory unit U22 to control the load port LP, the indexer robot IR, the center robot CR, and the multiple processing devices U1.

[0030] Each load port LP accommodates a stack of substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the processing devices U1. Each processing device U1 supplies a processing liquid to the substrate W while rotating the substrate W, and processes the substrate W with the processing liquid.

[0031] Specifically, the processing devices U1 constitute a plurality of towers TW (four towers TW in the first embodiment) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of processing devices U1 (three processing devices U1 in the first embodiment) stacked vertically.

[0032] Next, the substrate processing apparatus 500 according to the first embodiment will be described with reference to Fig. 2. Fig. 2 is a diagram showing the inside of a processing apparatus U1 in the substrate processing apparatus 500. Note that, in Fig. 2, one processing apparatus U1 is shown for the sake of simplicity.

[0033] 2, the processing apparatus U1 includes a chamber 1, a spin chuck 3, a spin shaft 5, a spin motor 7, a nozzle 9, a nozzle moving unit 11, a nozzle 13, a prohibition unit 15, a lifting unit 17, and a cup unit 19. The substrate processing apparatus 500 further includes a processing liquid supplying apparatus U3, a valve V1, a pipe P1, a valve V2, a pipe P2, a discharge pipe Q1, a discharge valve Q11, a drain tank U4, a recovery pipe Q2, and a recovery valve Q21.

[0034] The chamber 1 has a generally box-like shape and accommodates the substrate W, the spin chuck 3, the spin shaft 5, the spin motor 7, the nozzle 9, the nozzle movement unit 11, the nozzle 13, the prohibition unit 15, the lift unit 17, the cup unit 19, part of the pipe P1, part of the pipe P2, part of the discharge pipe Q1, and part of the recovery pipe Q2.

[0035] The spin chuck 3 holds and rotates the substrate W. Specifically, the spin chuck 3 rotates the substrate W about a rotation axis AX of the spin chuck 3 while holding the substrate W horizontally in the chamber 1. The spin chuck 3 corresponds to an example of a "substrate holding part."

[0036] The spin chuck 3 includes a plurality of chuck members 31 and a spin base 33. The plurality of chuck members 31 are provided on the spin base 33. The plurality of chuck members 31 hold the substrate W in a horizontal position. The spin base 33 is substantially disk-shaped, and supports the plurality of chuck members 31 in a horizontal position.

[0037] The spin shaft 5 is fixed to the spin base 33. The spin shaft 5 is also fixed to a drive shaft of a spin motor 7. The spin motor 7 rotates the spin shaft 5 to rotate the spin base 33 about a rotation axis AX. As a result, the substrate W held by a plurality of chuck members 31 provided on the spin base 33 rotates about the rotation axis AX.

[0038] The nozzle 9 supplies the processing liquid toward the rotating substrate W. In the first embodiment, the nozzle 9 ejects the processing liquid toward the rotating substrate W. The processing liquid is typically a chemical liquid. In this specification, the processing liquid refers to a liquid that directly contributes to the purpose of processing the substrate W, among liquids that process the substrate W. Therefore, the processing liquid is distinguished from a rinse liquid, among liquids that process the substrate W.

[0039] For example, when the processing device U1 performs an etching process on the substrate W, the processing liquid includes a phosphoric acid liquid. The phosphoric acid liquid contains phosphoric acid and water. When performing the etching process, the substrate W is, for example, a semiconductor wafer on which a silicon nitride film and a silicon oxide film are formed. The etching process is a process for selectively etching the silicon nitride film from the surface of the semiconductor wafer. The temperature of the phosphoric acid liquid when the phosphoric acid liquid is supplied to the substrate W to perform the etching process is, for example, 175°C.

[0040] For example, when the processing device U1 performs a resist removal process on the substrate W, the processing liquid contains a sulfuric acid / hydrogen peroxide mixture (SPM). When performing the resist removal process, the substrate W is, for example, a semiconductor wafer on which a resist is formed. The resist removal process is a process for removing resist from the surface of the semiconductor wafer. The temperature of the SPM when the resist removal process is performed by supplying the SPM to the substrate W is, for example, 200°C.

[0041] The nozzle movement unit 11 moves the nozzle 9 between a processing position and a retracted position. The processing position refers to a position above the substrate W. When the nozzle 9 is located at the processing position, it supplies a processing liquid toward the substrate W. The retracted position refers to a position radially outward of the substrate W.

[0042] Specifically, the nozzle moving unit 11 includes an arm 111, a rotating shaft 117, and a nozzle moving mechanism 115. The arm 111 extends along a substantially horizontal direction. The nozzle 9 is attached to the tip of the arm 111. The arm 111 is coupled to the rotating shaft 117. The rotating shaft 117 extends along a substantially vertical direction. The nozzle moving mechanism 115 rotates the rotating shaft 117 around a rotation axis line along a substantially vertical direction to rotate the arm 111 along a substantially horizontal plane. As a result, the nozzle 9 moves along the substantially horizontal plane. For example, the nozzle moving mechanism 115 includes an arm swing motor that rotates the rotating shaft 117 around the rotation axis line. The arm swing motor is, for example, a servo motor. In addition, the nozzle moving mechanism 115 raises and lowers the rotating shaft 117 along a substantially vertical direction to raise and lower the arm 111. As a result, the nozzle 9 moves along a substantially vertical direction. For example, the nozzle movement mechanism 115 includes a ball screw mechanism and an arm lift motor that provides a driving force to the ball screw mechanism. The arm lift motor is, for example, a servo motor.

[0043] The processing liquid supplying device U3 supplies the processing liquid to the pipe P1. The pipe P1 supplies the processing liquid to the nozzle 9. The valve V1 is inserted in the pipe P1 and switches between starting and stopping the supply of the processing liquid to the nozzle 9.

[0044] Specifically, the processing liquid supplying apparatus U3 includes a supply tank TD. The supply tank TD stores the processing liquid. The processing liquid supplying apparatus U3 supplies the processing liquid stored in the supply tank TD to a pipe P1. The processing liquid supplying apparatus U3 further includes a recovery tank TR. The recovery tank TR will be described later.

[0045] After the substrate W has been treated with the treatment liquid, the nozzle 13 supplies a rinsing liquid toward the rotating substrate W. That is, the nozzle 13 washes away the treatment liquid adhering to the substrate W with the rinsing liquid. The rinsing liquid is, for example, deionized water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, or hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm). The type of rinsing liquid is not particularly limited as long as it can rinse the substrate W. When the treatment liquid contains SPM, the rinsing liquid may be, for example, hydrogen peroxide water.

[0046] The pipe P2 supplies the rinsing liquid to the nozzle 13. The valve V2 is inserted in the pipe P2 and switches between starting and stopping the supply of the rinsing liquid to the nozzle 13.

[0047] The prohibition portion 15 includes a first guard G1 and a second guard G2. The first guard G1 and the second guard G2 are arranged concentrically about the rotation axis AX.

[0048] The first guard G1 receives the rinsing liquid from the rotating substrate W. Specifically, the first guard G1 is disposed radially outside the spin chuck 3 and along the circumferential direction of the spin chuck 3. The first guard G1 includes a cylindrical portion G11 and a ceiling portion G12. The cylindrical portion G11 has a substantially cylindrical shape. The ceiling portion G12 extends obliquely upward from an upper end portion of the cylindrical portion G11 toward the rotation axis AX. The ceiling portion G12 has a substantially annular shape.

[0049] The second guard G2 receives the processing liquid from the rotating substrate W. Specifically, the second guard G2 is disposed radially outside the spin chuck 3 along the circumferential direction of the spin chuck 3. The second guard G2 is disposed at a position different from the first guard G1 in the radial direction of the spin chuck 3. The second guard G2 includes a cylindrical portion G21 and a ceiling portion G22. The cylindrical portion G21 has a substantially cylindrical shape. The cylindrical portion G21 is located radially outside the spin chuck 3 relative to the cylindrical portion G11 of the first guard G1. The ceiling portion G22 extends obliquely upward from an upper end of the cylindrical portion G21 toward the rotation axis AX. The ceiling portion G22 has a substantially annular shape.

[0050] That is, the prohibition section 15 receives the processing liquid or rinsing liquid scattered from the substrate W during rotation.

[0051] The lifting unit 17 lifts or lowers the prohibition unit 15. Specifically, the lifting unit 17 includes a first lifting mechanism D1 and a second lifting mechanism D2.

[0052] The first lifting mechanism D1 raises or lowers the first guard G1 between a liquid receiving position and a retracted position. The liquid receiving position indicates a position when the first guard G1 is raised and the upper end of the first guard G1 is positioned vertically above the substrate W. The retracted position indicates a position when the first guard G1 is lowered and the upper end of the first guard G1 is positioned vertically below the substrate W. The first lifting mechanism D1 includes, for example, a ball screw mechanism and a motor that provides a driving force to the ball screw mechanism.

[0053] The second lifting mechanism D2 raises or lowers the second guard G2 between a liquid receiving position and a retracted position. The liquid receiving position indicates a position when the second guard G2 is raised and the upper end of the second guard G2 is positioned vertically above the substrate W. The retracted position indicates a position when the second guard G2 is lowered and the upper end of the second guard G2 is positioned vertically below the substrate W. The second lifting mechanism D2 includes, for example, a ball screw mechanism and a motor that provides a driving force to the ball screw mechanism.

[0054] The cup portion 19 receives the processing liquid or rinsing liquid guided downward by the prohibition portion 15. Specifically, the cup portion 19 includes a first cup C1 and a second cup C2.

[0055] The first cup C1 receives the rinse liquid guided downward by the first guard G1. The bottom of the first cup C1 is disposed below the first guard G1 (specifically, the cylindrical portion G11). The first cup C1 forms an annular liquid-receiving groove that opens upward.

[0056] The second cup C2 receives the processing liquid guided downward by the second guard G2. The bottom of the second cup C2 is disposed below the second guard G2 (specifically, the cylindrical portion G21). The second cup C2 forms an annular liquid-receiving groove that opens upward.

[0057] The rinsing liquid scattered from the rotating substrate W flows into the discharge pipe Q1. Specifically, the discharge pipe Q1 is connected to the first cup C1. Therefore, the rinsing liquid guided to the first cup C1 by the first guard G1 flows into the discharge pipe Q1. That is, the rinsing liquid flows into the discharge pipe Q1 via the first guard G1 and the first cup C1. The discharge pipe Q1 is connected to the drain tank U4 and discharges the rinsing liquid into the drain tank U4. As a result, the drain tank U4 stores the rinsing liquid.

[0058] That is, the rinsing liquid received by the first guard G1 is discharged into the drain tank U4 via the first cup C1 and the drain pipe Q1. The drain valve Q11 is inserted into the drain pipe Q1. When the drain valve Q11 is opened, the flow path of the drain pipe Q1 is opened. As a result, the rinsing liquid is discharged into the drain tank U4 through the drain pipe Q1. On the other hand, when the drain valve Q11 is closed, the flow path of the drain pipe Q1 is blocked. As a result, the discharge of the rinsing liquid into the drain tank U4 is stopped.

[0059] The processing liquid scattered from the rotating substrate W flows into the recovery pipe Q2. Specifically, the recovery pipe Q2 is connected to the second cup C2. Therefore, the processing liquid guided to the second cup C2 by the second guard G2 flows into the recovery pipe Q2. That is, the processing liquid flows into the recovery pipe Q2 via the second guard G2 and the second cup C2. The recovery pipe Q2 is connected to the recovery tank TR and guides the processing liquid to the recovery tank TR. Therefore, the recovery tank TR recovers the processing liquid through the recovery pipe Q2 and stores the processing liquid. The processing liquid supplying device U3 adjusts the processing liquid stored in the recovery tank TR to a target concentration and a target temperature. Then, the processing liquid supplying device U3 supplies the processing liquid whose concentration and temperature have been adjusted from the recovery tank TR to the supply tank TD.

[0060] That is, the processing liquid received by the second guard G2 is collected in the collection tank TR via the second cup C2 and the collection pipe Q2. The collection valve Q21 is inserted in the collection pipe Q2. When the collection valve Q21 is opened, the flow path of the collection pipe Q2 is opened. As a result, the processing liquid is guided to the collection tank TR through the collection pipe Q2. On the other hand, when the collection valve Q21 is closed, the flow path of the collection pipe Q2 is blocked. As a result, the guide of the processing liquid to the collection tank TR is stopped.

[0061] The control device U2 controls each component of the processing device U1. Specifically, the processor of the control unit U21 executes a computer program stored in the storage device of the memory unit U22 to control the spin chuck 3, the spin motor 7, the nozzle moving unit 11, the prohibition unit 15, the lifting unit 17, and the cup unit 19. The processor of the control unit U21 also executes a computer program stored in the storage device of the memory unit U22 to control the valve V1, the processing liquid supply device U3, the valve V2, the discharge valve Q11, and the recovery valve Q21.

[0062] 2 and 3, a recovery operation of a processing liquid by the substrate processing apparatus 500 will be described. Fig. 3 is a time chart showing the recovery operation of a processing liquid by the substrate processing apparatus 500. In Fig. 3, the horizontal axis indicates time t.

[0063] As shown in FIG. 2 and FIG. 3, in the processing period Tx, the processing device U1 processes the substrate W with the processing liquid. Therefore, in the processing period Tx, the nozzle 9 supplies the processing liquid to the substrate W. The processing period Tx indicates a period during which the substrate W is processed with the processing liquid. The processing period Tx may include a pre-processing period and / or a post-processing period. The pre-processing period indicates a preparation period for supplying the processing liquid to the substrate W. The post-processing period indicates a period after the processing liquid is supplied to the substrate W and before the rinsing liquid is supplied. The post-processing period may include, for example, a period for shaking off the processing liquid. The shaking off period indicates a period during which the processing liquid is shaken off from the substrate W by rotating the substrate W after the processing liquid is supplied. In the shaking off period, it is preferable to shake off the processing liquid from the substrate W to such an extent that the surface of the substrate W is not exposed, rather than completely removing the processing liquid from the substrate W.

[0064] During the processing period Tx, the processing liquid splashed from the rotating substrate W is guided to the second guard G2 and the second cup C2 and flows into the recovery pipe Q2. Meanwhile, during the processing period Tx, the recovery valve Q21 opens the flow path of the recovery pipe Q2. Therefore, during the processing period Tx, the processing liquid splashed from the rotating substrate W is guided to the recovery tank TR by the recovery pipe Q2. As a result, the recovery tank TR recovers the processing liquid through the recovery pipe Q2.

[0065] Next, in the first period T1 after the processing period Tx, the processing device U1 performs a rinse process. That is, the processing device U1 washes away the processing liquid attached to the surface of the substrate W with a rinse liquid. Therefore, in the first period T1, the nozzle 13 supplies the rinse liquid to the substrate W. Specifically, the first period T1 indicates a period after the supply of the processing liquid to the substrate W is stopped and the rinse liquid is supplied to the substrate W during rotation. That is, the first period T1 indicates a period during which the rinse process is performed. Note that the first period T1 may include a pre-rinse processing period and / or a post-rinse processing period. The pre-rinse processing period indicates a preparation period after the processing period Tx for supplying the rinse liquid to the substrate W. The post-rinse processing period indicates a period after the rinse liquid is supplied to the substrate W. The post-rinse processing period may include, for example, a period for shaking off the rinse liquid. The shake-off period indicates a period for shaking off the rinse liquid from the substrate W by rotating the substrate W after the rinse liquid is supplied.

[0066] During the first period T1, the rinsing liquid scattered from the rotating substrate W is guided by the first guard G1 and the first cup C1 and flows into the discharge pipe Q1. Meanwhile, during the first period T1, the discharge valve Q11 opens the flow path of the discharge pipe Q1. Therefore, during the first period T1, the rinsing liquid scattered from the rotating substrate W is guided to the drain tank U4 by the discharge pipe Q1. The discharge valve Q11 may be left open or may be closed after the end of the first period T1.

[0067] Here, the prohibition unit 15 can prohibit the rinsing liquid from flowing into the recovery pipe Q2. Therefore, the control unit U21 controls the prohibition unit 15 to prohibit the rinsing liquid from flowing into the recovery pipe Q2 during the first period T1. Meanwhile, during part or all of the first period T1, the recovery valve Q21 opens the flow path of the recovery pipe Q2. That is, during part or all of the first period T1, the flow path of the recovery pipe Q2 is open.

[0068] Therefore, according to the first embodiment, even in the first period T1 in which the rinsing process is performed, the processing liquid can be collected through the recovery pipe Q2 following the processing period Tx. As a result, a sufficient time can be secured for collecting the processing liquid, and the recovery rate of the processing liquid can be improved. In the first period T1, for example, the processing liquid attached to the second guard G2 flows into the recovery pipe Q2 via the second cup C2 due to gravity (the weight of the processing liquid). Furthermore, in the first period T1, for example, the processing liquid attached to the recovery pipe Q2 moves toward the recovery tank TR through the recovery pipe Q2 due to gravity (the weight of the processing liquid). In this case, depending on the structure and arrangement of the recovery pipe Q2, the processing liquid may move to the middle of the recovery pipe Q2 or may move to the recovery tank TR. Particularly, in the first embodiment, since the inflow of the rinsing liquid into the recovery pipe Q2 is prohibited in the first period T1, even if the processing liquid moves only to the middle of the recovery pipe Q2, the processing liquid remaining in the recovery pipe Q2 can be collected into the recovery tank TR in the processing period Tx of the next cycle.

[0069] In particular, even if the viscosity of the processing liquid is relatively high, sufficient time can be ensured to recover the processing liquid, so that the recovery rate of the processing liquid can be improved. For example, even if the processing liquid contains phosphoric acid liquid or SPM, the recovery rate of the processing liquid can be improved. A phosphoric acid liquid or a processing liquid containing SPM is an example of a processing liquid with high viscosity. Although it varies depending on the temperature and concentration of the phosphoric acid liquid, for example, the viscosity of the phosphoric acid liquid is about 100 CP (centipoise) at about 25°C. Although it varies depending on the concentration and temperature of the SPM, for example, the viscosity of the SPM is about 23 CP (centipoise) at about 25°C. Note that, during the first period T1 in which the rinsing process is performed, the temperature of the processing liquid adhering to the second guard G2 and / or the recovery pipe Q2 is lower than the temperature during the processing of the substrate W. Therefore, during the recovery of the processing liquid during the first period T1, the viscosity of the processing liquid adhering to the second guard G2 and / or the recovery pipe Q2 is higher than the viscosity of the processing liquid during the processing. However, in embodiment 1, the treatment liquid can be recovered through the recovery pipe Q2 even during the first period T1, so that even in the case of a treatment liquid with a relatively high viscosity, such as phosphoric acid solution or SPM, sufficient time can be secured for recovery of the treatment liquid, thereby improving the recovery rate of the treatment liquid.

[0070] In addition, in the first embodiment, in the first period T1 in which the rinsing process is performed, the rinsing liquid is prohibited from flowing into the recovery pipe Q2. Therefore, in the first period T1, the rinsing liquid is prevented from flowing into the recovery tank TR. As a result, the concentration of the processing liquid in the recovery tank TR can be smoothly adjusted.

[0071] Furthermore, even after the first period T1 has elapsed, the prohibition unit 15 may continue to prohibit the flow of the rinsing liquid into the recovery pipe Q2. And, even after the first period T1 has elapsed, the recovery valve Q21 may continue to open the flow path of the recovery pipe Q2. In this case, more sufficient time can be secured for the recovery of the processing liquid. As a result, the recovery rate of the processing liquid can be further improved.

[0072] As described above with reference to FIGS. 2 and 3, according to the first embodiment, the substrate processing apparatus 500 can improve the recovery rate of the processing liquid while smoothly adjusting the concentration of the processing liquid in the recovery tank TR.

[0073] In particular, in the first embodiment, the recovery pipe Q2 and the discharge pipe Q1 are separate pipes of different series, and therefore, during the first period T1 in which the rinsing process is performed, the prohibition unit 15 can easily prohibit the rinsing liquid from flowing into the recovery pipe Q2.

[0074] Next, referring to Fig. 4(a) and Fig. 4(b), a detailed description will be given of the recovery operation of the processing liquid by the substrate processing apparatus 500. Fig. 4(a) is a diagram showing a process of recovering the processing liquid during a processing period Tx using the processing liquid. Fig. 4(b) is a diagram showing a process of recovering the processing liquid during a first period T1 for a rinsing process.

[0075] As shown in Fig. 4(a), during the processing period Tx, the second guard G2 is located at the liquid receiving position. Therefore, during the processing period Tx, the second guard G2 receives the processing liquid splashed from the rotating substrate W, and guides the processing liquid to the recovery pipe Q2 via the second cup C2. Meanwhile, during the processing period Tx, the recovery valve Q21 opens the flow path of the recovery pipe Q2. Therefore, the processing liquid is recovered into the recovery tank TR through the recovery pipe Q2.

[0076] On the other hand, during the processing period Tx, the first guard G1 is located at the retracted position. Therefore, the processing liquid does not flow into the discharge pipe Q1. During the processing period Tx, the discharge valve Q11 may open or close the flow path of the discharge pipe Q1.

[0077] Next, as shown in FIG. 4(b), in the first period T1, the second guard G2 is located at the liquid receiving position. However, in the first period T1, the first guard G1, which is located inside the second guard G2, is located at the liquid receiving position. Therefore, in the first period T1, the first guard G1 receives the rinsing liquid scattered from the substrate W and guides the rinsing liquid to the discharge pipe Q1 via the first cup C1 while preventing the rinsing liquid from flowing into the recovery pipe Q2. As a result, according to the first embodiment, the processing liquid can be collected through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. Therefore, a sufficient time can be secured for the recovery of the processing liquid, and the recovery rate of the processing liquid can be improved. In addition, since the rinsing liquid does not flow into the recovery pipe Q2, the rinsing liquid is prevented from flowing into the recovery tank TR. As a result, the concentration of the processing liquid in the recovery tank TR can be smoothly adjusted.

[0078] Specifically, during the first period T1, the rinse liquid received by the first guard G1 flows into the discharge pipe Q1 via the first cup C1. In addition, during the first period T1, the flow path of the discharge pipe Q1 is open. Therefore, the rinse liquid is discharged through the discharge pipe Q1 to the drain tank U4.

[0079] On the other hand, during the first period T1, the processing liquid adhering to the second guard G2 flows into the recovery pipe Q2 via the second cup C2 due to its own weight. In addition, during the first period T1, the flow path of the recovery pipe Q2 is open. Therefore, the processing liquid can be recovered through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. Also, during the first period T1, the first guard G1 is located at the liquid receiving position, so the rinsing liquid is prohibited from flowing into the recovery pipe Q2.

[0080] Next, a substrate processing method performed by the substrate processing apparatus 500 will be described with reference to Fig. 2 and Fig. 5. Fig. 5 is a flowchart showing the substrate processing method according to the first embodiment. As shown in Fig. 5, the substrate processing method includes steps S1 to S10. The substrate processing method is performed by the substrate processing apparatus 500 for each substrate W.

[0081] 2 and 5, in step S1, the processing device U1 of the substrate processing device 500 starts rotating the substrate W. Specifically, the control unit U21 controls the spin motor 7 so as to rotate the spin chuck 3. As a result, the spin chuck 3 rotates, and the substrate W held by the spin chuck 3 rotates.

[0082] Next, the substrate processing apparatus 500 performs steps S2 and S3 in parallel during a processing period Tx (FIG. 3).

[0083] That is, in step S2, the processing apparatus U1 of the substrate processing apparatus 500 supplies a processing liquid to the substrate W during rotation to process the substrate W.

[0084] Specifically, the control unit U21 controls the valve V1 so that the nozzle 9 supplies the processing liquid toward the substrate W. As a result, the nozzle 9 supplies the processing liquid toward the rotating substrate W. Thus, during the processing period Tx, the substrate W is processed with the processing liquid.

[0085] On the other hand, in step S3, the substrate processing apparatus 500 starts recovering the processing liquid. Therefore, the processing liquid scattered from the substrate W is recovered into the recovery tank TR through the recovery pipe Q2.

[0086] Specifically, the control unit U21 controls the recovery valve Q21 to open. As a result, the recovery valve Q21 opens, and the flow path of the recovery pipe Q2 is opened. In addition, the control unit U21 controls the first lifting mechanism D1 to position the first guard G1 at the retracted position. As a result, the first guard G1 is positioned at the retracted position during the processing period Tx. In addition, the control unit U21 controls the second lifting mechanism D2 to position the second guard G2 at the liquid receiving position. As a result, the second guard G2 is positioned at the liquid receiving position during the processing period Tx. Therefore, during the processing period Tx, the second guard G2 receives the processing liquid and guides the processing liquid to the recovery pipe Q2 via the second cup C2.

[0087] Even after the end of step S2, the substrate processing apparatus 500 continues to collect the processing liquid. That is, even after the end of step S2, the second guard G2 continues to guide the processing liquid remaining in the second guard G2 to the recovery pipe Q2 via the second cup C2. Specifically, even after the end of step S2, the processing liquid remaining in the second guard G2 continues to flow into the recovery pipe Q2 via the second cup C2 due to its own weight. In addition, even after the end of step S2, the flow path of the recovery pipe Q2 continues to be open, so that the processing liquid remaining in the recovery pipe Q2 moves toward the recovery tank TR due to its own weight.

[0088] Next, in step S4, the prohibition unit 15 of the substrate processing apparatus 500 prohibits the rinsing liquid from flowing into the recovery pipe Q2.

[0089] Specifically, the control unit U21 controls the first lifting mechanism D1 so that the first guard G1 is located at the liquid receiving position. As a result, the first guard G1 is located at the liquid receiving position. Therefore, the first guard G1 prohibits the rinsing liquid from flowing into the recovery pipe Q2.

[0090] Next, the substrate processing apparatus 500 performs steps S5 and S6 in parallel during a first period T1 (FIG. 3).

[0091] That is, in step S5, the processing device U1 of the substrate processing device 500 supplies a rinsing liquid to the substrate W during rotation to wash away the processing liquid adhering to the substrate W.

[0092] Specifically, the control unit U21 controls the valve V2 so that the nozzle 13 supplies the rinsing liquid toward the substrate W. As a result, the nozzle 13 supplies the rinsing liquid toward the rotating substrate W. Thus, in the first period T1, the substrate W is cleaned with the rinsing liquid. That is, after the processing liquid is supplied to the substrate W, the rinsing liquid is supplied to the rotating substrate W.

[0093] On the other hand, in step S6, the substrate processing apparatus 500 starts discharging the rinsing liquid. Therefore, the rinsing liquid scattered from the substrate W is collected in the waste liquid tank U4 through the discharge pipe Q1.

[0094] Specifically, the control unit U21 controls the discharge valve Q11 so that the discharge valve Q11 opens. As a result, the discharge valve Q11 opens, and the flow path of the discharge pipe Q1 is opened. In addition, the first guard G1 is continuously positioned at the liquid receiving position from step S4 during the first period T1. Therefore, during the first period T1, the first guard G1 receives the rinse liquid and guides the rinse liquid to the discharge pipe Q1 via the first cup C1. As a result, during the first period T1, the rinse liquid is discharged through the discharge pipe Q1.

[0095] Because step S4 is performed before steps S5 and S6, the rinsing liquid is prohibited from flowing into the recovery pipe Q2 during the execution of steps S5 and S6. That is, the rinsing liquid is prohibited from flowing into the recovery pipe Q2 during the first period T1.

[0096] Therefore, even during the execution of steps S5 and S6, the substrate processing apparatus 500 continues to collect the processing liquid. That is, even during the execution of steps S5 and S6, the second guard G2 continues to guide the processing liquid remaining in the second guard G2 to the recovery pipe Q2 via the second cup C2. Specifically, even during the execution of steps S5 and S6, the processing liquid remaining in the second guard G2 continues to flow into the recovery pipe Q2 via the second cup C2 due to its own weight. In addition, even during the execution of steps S5 and S6, the flow path of the recovery pipe Q2 continues to be open, so that the processing liquid remaining in the recovery pipe Q2 moves toward the recovery tank TR due to its own weight.

[0097] Next, in step S7, the processing apparatus U1 of the substrate processing apparatus 500 rotates the substrate W to shake off the rinsing liquid adhering to the substrate W, and dries the substrate W.

[0098] Next, in step S8, the processing device U1 stops the rotation of the substrate W. Specifically, the control unit U21 controls the spin motor 7 to stop the spin chuck 3. As a result, the spin chuck 3 stops, and the substrate W held by the spin chuck 3 stops.

[0099] Next, in step S9, the substrate processing apparatus 500 stops discharging the rinsing liquid. Specifically, the control unit U21 controls the discharge valve Q11 to close the discharge valve Q11. As a result, the discharge valve Q11 is closed and the flow path of the discharge pipe Q1 is blocked.

[0100] Next, in step S10, the substrate processing apparatus 500 stops collecting the processing liquid. Specifically, the control unit U21 controls the collection valve Q21 to close it. As a result, the collection valve Q21 closes and the flow path of the collection pipe Q2 is blocked. When step S10 ends, a series of processes for one substrate W ends. Note that step S8 may be performed after step S9.

[0101] As described above with reference to FIG. 5, in the substrate processing method according to the first embodiment, by performing step S4, the rinsing liquid is prohibited from flowing into the recovery pipe Q2 during the first period T1 (FIG. 3) during which steps S5 and S6 are performed. Therefore, the processing liquid can be collected through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. As a result, a sufficient time can be secured for collecting the processing liquid, and the recovery rate of the processing liquid can be improved. In addition, since the rinsing liquid does not flow into the recovery pipe Q2 and the recovery tank TR during the first period T1, the concentration of the processing liquid in the recovery tank TR can be smoothly adjusted.

[0102] In the semiconductor manufacturing method according to the first embodiment, the semiconductor substrate W is processed by a substrate processing method including steps S1 to S10 to manufacture a semiconductor, which is the processed semiconductor substrate W. That is, in the semiconductor manufacturing method according to the first embodiment, the semiconductor substrate W is processed by the substrate processing apparatus 500 to manufacture a semiconductor, which is the processed semiconductor substrate W.

[0103] Here, when the processing apparatus U1 of the substrate processing apparatus 500 processes a plurality of substrates W successively, steps S1 to S8 are repeatedly executed, and steps S9 and S10 are executed in processing the last substrate W of the plurality of substrates W. In this case, by opening the recovery valve Q21 and the exhaust valve Q11 in steps S3 and S6 in processing the first substrate W of the plurality of substrates W, the recovery valve Q21 and the exhaust valve Q11 are kept open in processing the second and subsequent substrates W.

[0104] 1 and 2, the processing liquid supplying apparatus U3 may be provided for one processing apparatus U1, or may be shared by a plurality of processing apparatuses U1. The substrate processing apparatus 500 may include a plurality of recovery tanks TR for one supply tank TD.

[0105] (Embodiment 2) A substrate processing apparatus 500 according to a second embodiment of the present invention will be described with reference to Figs. 6 to 15. The second embodiment differs from the first embodiment mainly in that the substrate processing apparatus 500 according to the second embodiment recovers a processing liquid by using a rinsing liquid. The following mainly describes the differences between the second embodiment and the first embodiment. Since the hardware configuration of the substrate processing apparatus 500 according to the second embodiment is similar to that of the substrate processing apparatus 500 according to the first embodiment, Fig. 2 will be referred to as appropriate in the description of the second embodiment.

[0106] First, the substrate processing apparatus 500 will be described with reference to Fig. 2 and Fig. 6. Fig. 6 is a time chart showing the recovery operation of the processing liquid by the substrate processing apparatus 500 according to the second embodiment. As shown in Fig. 2 and Fig. 6, during the processing period Tx, the processing apparatus U1 processes the substrate W with the processing liquid. During the processing period Tx, the processing liquid scattered from the rotating substrate W is guided by the second guard G2 and the second cup C2 and flows into the recovery pipe Q2. Then, the processing liquid passes through the recovery pipe Q2 and is recovered in the recovery tank TR. Other than that, the processing with the processing liquid and the recovery operation of the processing liquid during the processing period Tx are the same as those of the first embodiment shown in Fig. 3.

[0107] Next, in a shake-off period Ty following the processing period Tx, the processing device U1 stops the supply of the processing liquid to the substrate W, and further rotates the substrate W at a rotation speed higher than the rotation speed of the substrate W during the processing period Tx to shake off the processing liquid adhering to the substrate W. The shake-off period Ty indicates a period during which the processing liquid is shaken off from the substrate W by the rotation of the substrate W after the processing liquid is supplied. The shake-off process during the shake-off period Ty is similar to the shake-off process during the shake-off period described with reference to FIG.

[0108] During the shake-off period Ty, the processing liquid scattered from the rotating substrate W is guided to the second guard G2 and the second cup C2 and flows into the recovery pipe Q2. Meanwhile, during the shake-off period Ty, the recovery valve Q21 opens the flow path of the recovery pipe Q2. Therefore, during the shake-off period Ty, the processing liquid scattered from the rotating substrate W is guided to the recovery tank TR by the recovery pipe Q2. Since the processing liquid is recovered even during the shake-off period Ty, the recovery rate of the processing liquid can be further improved.

[0109] Next, in a second period T2 after the shake-off period Ty and in a first period T1 following the second period T2, the processing device U1 performs a rinsing process. That is, the processing device U1 washes away the processing liquid adhering to the surface of the substrate W with a rinsing liquid. Therefore, in the second period T2 and the first period T1, the nozzle 13 continuously supplies the rinsing liquid to the substrate W. The second period T2 and the first period T1 indicate periods during which the rinsing process is performed.

[0110] Specifically, the second period T2 indicates a period after the supply of the processing liquid to the substrate W is stopped and during which the rinsing liquid is supplied to the rotating substrate W. The second period T2 is a period prior to the first period T1, is continuous with the first period T1, and includes the start of the supply of the rinsing liquid to the substrate W. The second period T2 is shorter than the first period T1. The second period T2 may include the pre-rinsing period described with reference to FIG. 3.

[0111] Furthermore, during the second period T2, the prohibition unit 15 does not prohibit the flow of rinsing liquid into the recovery pipe Q2. Therefore, the rinsing liquid flows into the recovery pipe Q2. Meanwhile, during part or all of the second period T2, the recovery valve Q21 opens the flow path of the recovery pipe Q2. That is, during part or all of the second period T2, the flow path of the recovery pipe Q2 is open. Therefore, the processing liquid adhering to the second guard G2 and the recovery pipe Q2 is transported to the recovery tank TR by the rinsing liquid. As a result, according to the second embodiment, the recovery rate of the processing liquid can be further improved.

[0112] In particular, even if the viscosity of the processing liquid is relatively high, in the second embodiment, the processing liquid adhering to the recovery pipe Q2 can be transported to the recovery tank TR by the rinse liquid, so that the recovery rate of the processing liquid having a relatively high viscosity can be further improved. For example, even if the processing liquid contains a phosphoric acid solution or SPM, the recovery rate of the processing liquid can be further improved.

[0113] In addition, in the first period T1 following the second period T2, similarly to the first period T1 of the first embodiment described with reference to FIG. 3, the control unit U21 controls the prohibition unit 15 to prohibit the rinse liquid from flowing into the recovery pipe Q2. Therefore, the rinse liquid flows into the recovery tank TR through the recovery pipe Q2 only in the second period T2, which is shorter than the first period T1. As a result, the influence of the rinse liquid on the adjustment of the concentration of the treatment liquid in the recovery tank TR can be reduced. In other words, even if the rinse liquid flows into the recovery tank TR in the second period T2, the treatment liquid supplying device U3 can adjust the treatment liquid stored in the recovery tank TR to the target concentration and target temperature within a limited period.

[0114] During the first period T1, the processing apparatus U1 rotates the substrate W at a higher rotation speed than the rotation speed of the substrate W during the second period T2 to perform a rinsing process. Additionally, during the first period T1, the substrate processing apparatus 500 discharges the rinsing liquid into the drain tank U4 through the discharge pipe Q1. Other than that, the rinsing process and the operation of discharging the rinsing liquid are the same as those of the first embodiment shown in FIG.

[0115] Furthermore, in the second embodiment, similarly to the first embodiment, the flow of rinsing liquid into the recovery pipe Q2 is prohibited during the first period T1, and the flow path of the recovery pipe Q2 is open during part or all of the first period T1.

[0116] Therefore, according to the second embodiment, even during the first period T1 in which the rinsing process is performed, the processing liquid can be collected through the collection pipe Q2 following the second period T2. As a result, a sufficient time can be secured for collecting the processing liquid, and the recovery rate of the processing liquid can be improved. The other operations for collecting the processing liquid during the first period T1 are the same as those of the first embodiment shown in FIG.

[0117] In particular, in Embodiment 2, as in Embodiment 1, even when the viscosity of the processing liquid is relatively high, sufficient time can be ensured for recovering the processing liquid, so that the recovery rate of the processing liquid can be improved.

[0118] In addition, in Embodiment 2, as in Embodiment 1, during the first period T1 in which the rinsing process is executed, the inflow of the rinsing liquid into the recovery pipe Q2 is prohibited. Therefore, the inflow of the rinsing liquid into the recovery tank TR is suppressed, and the preparation of the concentration of the processing liquid in the recovery tank TR can be smoothly executed.

[0119] Also, in Embodiment 2 as well, as in Embodiment 1, even after the elapse of the first period T1, the prohibiting unit 15 may continue to prohibit the inflow of the rinsing liquid into the recovery pipe Q2. And even after the elapse of the first period T1, the flow path of the recovery pipe Q2 may continue to be opened. In this case, more sufficient time can be ensured for recovering the processing liquid, and the recovery rate of the processing liquid can be further improved.

[0120] As described above with reference to FIGS. 2 and 6, according to Embodiment 2, the substrate processing apparatus 500 can improve the recovery rate of the processing liquid while smoothly executing the preparation of the concentration of the processing liquid in the recovery tank TR. In addition, Embodiment 2 has the same effects as Embodiment 1. Note that the disconnection period Ty in FIG. 6 may not be provided. For example, when the processing liquid is SPM, the disconnection period Ty may not be provided.

[0121] Next, in order to facilitate the understanding of the recovery operation of the processing liquid in Embodiment 2, the recovery operation of the processing liquid in the comparative example will be described with reference to FIGS. 7(a) to 8(b).

[0122] FIG. 7(a) is a diagram showing a process of recovering a processing liquid during a processing period using the processing liquid (hereinafter referred to as "processing period Txc") in a substrate processing apparatus according to a comparative example. FIG. 7(b) is a diagram showing a process of recovering a processing liquid during a processing liquid shake-off period (hereinafter referred to as "shaking-off period Tyc") in a substrate processing apparatus according to a comparative example. FIG. 8(a) is a diagram showing a process of recovering a processing liquid during an initial period of a rinsing process (hereinafter referred to as "initial rinsing period T2c") in a substrate processing apparatus according to a comparative example. FIG. 8(b) is a diagram showing a process of discharging a rinsing liquid during a rinsing period following a rinsing process period Tc (hereinafter referred to as "rinsing period T1c") in a substrate processing apparatus according to a comparative example.

[0123] In the exhaust valve Q11, recovery valve Q21, and exhaust valve QX1 in Figures 7(a) to 8(b), a valve filled in black (e.g., exhaust valve Q11 in 7(a)) indicates that the valve is closed, and a valve filled in white (e.g., recovery valve Q21 in Figure 7(a)) indicates that the valve is open.

[0124] As shown in Fig. 7(a), in the comparative example, a discharge pipe QX is provided branching off from the recovery pipe Q2. A discharge valve QX1 is inserted in the discharge pipe QX. A drain tank UX2 is connected to the discharge pipe QX. Furthermore, in the comparative example, as shown in Figs. 7(a) to 8(b), the first guard G1 is always located in the retracted position, and the second guard G2 is always located in the liquid receiving position.

[0125] 7(a) and 7(b), during a processing period Txc by the processing liquid and a processing liquid shaking-off period Tyc, the processing liquid scattered from the rotating substrate W is collected in the collection tank TR via the second guard G2, the second cup C2, and the collection pipe Q2. In this case, the drain valve QX1 is closed so that the processing liquid does not flow into the drain tank UX2.

[0126] 8(a), even during the initial rinse period T2c, the recovery valve Q21 is open, and the processing liquid adhering to the second guard G2 and the recovery pipe Q2 is transported to the recovery tank TR by the rinsing liquid. In this case, the drain valve QX1 is closed so that the processing liquid does not flow into the drain tank UX2.

[0127] 8(b), during a rinsing period T1c, the recovery valve Q21 is closed and the discharge valve QX1 is open. Therefore, the rinsing liquid scattered from the rotating substrate W is discharged to the drain tank UX2 via the second guard G2, the second cup C2, the recovery pipe Q2, and the discharge pipe QX.

[0128] As described above with reference to FIGS. 7(a) to 8(b), in the comparative example, the discharge pipe QX for draining the rinsing liquid is connected to the recovery pipe Q2 downstream of the recovery pipe Q2. That is, recovery of the processing liquid and discharge of the rinsing liquid are performed in the same series of pipes. Then, if the initial rinse period T2c is lengthened to increase the recovery rate of the processing liquid and a sufficient time is secured to recover the processing liquid with the rinsing liquid, not only the processing liquid but also an unexpected amount of the rinsing liquid will flow into the recovery tank TR. As a result, in the comparative example, it may be difficult to adjust the concentration of the processing liquid in the recovery tank TR.

[0129] Therefore, in the second embodiment, as shown in Fig. 2, a recovery pipe Q2 for recovering the processing liquid and a discharge pipe Q1 for discharging the rinsing liquid are separated, and a prohibition unit 15 prohibits the rinsing liquid from flowing into the recovery pipe Q2 during a first period T1 (Fig. 6) in which the rinsing process is performed. Then, in parallel with the rinsing process, the processing liquid is recovered through the recovery pipe Q2. Therefore, a sufficient time for recovering the processing liquid can be secured while the second period T2 (Fig. 6) in which the processing liquid is recovered using the rinsing liquid is set to a short period that can reduce the effect of the rinsing liquid on the adjustment of the concentration of the processing liquid in the recovery tank TR.

[0130] Specifically, the processing liquid recovery operation shown in Fig. 9(a) to Fig. 10(b) is performed. Fig. 9(a) is a diagram showing a process of recovering the processing liquid during a processing period Tx using the processing liquid. Fig. 9(b) is a diagram showing a process of recovering the processing liquid during a period Ty for shaking off the processing liquid. Fig. 10(a) is a diagram showing a process of recovering the processing liquid during a second period T2 for a rinsing process. Fig. 10(b) is a diagram showing a process of recovering the processing liquid during a first period T1 for a rinsing process.

[0131] As shown in Fig. 9(a), during the processing period Tx by the processing liquid, the second guard G2 is located at the liquid receiving position. Therefore, during the processing period Tx, the second guard G2 receives the processing liquid scattered from the rotating substrate W, and guides the processing liquid to the recovery pipe Q2 via the second cup C2. Meanwhile, during the processing period Tx, the recovery valve Q21 opens the flow path of the recovery pipe Q2. Therefore, the processing liquid is recovered into the recovery tank TR through the recovery pipe Q2. Other operations during the processing period Tx are similar to those during the processing period Tx according to the first embodiment described with reference to Fig. 4(a).

[0132] 9(b), during the washing-off period Ty of the processing liquid, the states of the first guard G1, the second guard G2, the drain valve Q11, and the recovery valve Q21 are the same as those of the first guard G1, the second guard G2, the drain valve Q11, and the recovery valve Q21 during the processing period Tx. Therefore, during the washing-off period Ty, the processing liquid is recovered in the recovery tank TR, as in the processing period Tx. The rotation speed of the substrate W during the washing-off period Ty is higher than that of the substrate W during the processing period Tx.

[0133] Next, as shown in FIG. 10(a), in the second period T2 for the rinsing process, the first guard G1 is located at the retreat position. Therefore, in the second period T2, the first guard G1 does not receive the rinsing liquid scattered from the substrate W, and does not inhibit the rinsing liquid from flowing into the recovery pipe Q2. In the second period T2, the second guard G2 is located at the liquid receiving position. Therefore, in the second period T2, the second guard G2 receives the rinsing liquid scattered from the substrate W, and guides the rinsing liquid to the recovery pipe Q2. Meanwhile, in the second period T2, the recovery valve Q21 opens the flow path of the recovery pipe Q2. Therefore, the processing liquid adhering to the second guard G2 and the processing liquid adhering to the recovery pipe Q2 are transported to the recovery tank TR by the rinsing liquid. The rotation speed of the substrate W in the second period T2 is lower than the rotation speed of the substrate W in the shake-off period Ty.

[0134] Next, as shown in FIG. 10(b), in the first period T1 for the rinsing process, the second guard G2 is located at the liquid receiving position. However, in the first period T1, the first guard G1, which is located inside the second guard G2, is located at the liquid receiving position. Therefore, in the first period T1, the first guard G1 receives the rinsing liquid scattered from the substrate W and guides the rinsing liquid to the discharge pipe Q1 via the first cup C1 while preventing the rinsing liquid from flowing into the recovery pipe Q2. As a result, according to the second embodiment, the processing liquid can be collected through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. Therefore, a sufficient time can be secured for the recovery of the processing liquid, and the recovery rate of the processing liquid can be improved. In addition, since the rinsing liquid does not flow into the recovery pipe Q2, the rinsing liquid is prevented from flowing into the recovery tank TR. As a result, the concentration of the processing liquid in the recovery tank TR can be smoothly adjusted. Other operations in the first period T1 are the same as those in the first period T1 according to the first embodiment described with reference to FIG. 4(b). The rotation speed of the substrate W in the first period T1 is higher than the rotation speed of the substrate W in the second period T2.

[0135] As described above with reference to Figures 10(a) and 10(b), according to the second embodiment, in the first period T1 following the second period T2, the first guard G1 prohibits the rinse liquid from flowing into the recovery pipe Q2. Therefore, only in the second period T2, which is shorter than the first period T1, the rinse liquid is guided to the recovery pipe Q2 by the second guard G2, and the rinse liquid only flows into the recovery tank TR. As a result, the influence of the rinse liquid on the adjustment of the concentration of the processing liquid in the recovery tank TR can be reduced.

[0136] In particular, in the second embodiment, the rotation speed of the substrate W in the first period T1 shown in Fig. 10(b) is higher than the rotation speed of the substrate W in the second period T2 shown in Fig. 10(a). Therefore, after the first guard G1 located in the retracted position in the second period T2 is raised to the liquid receiving position, the rotation speed of the substrate W is increased in the first period T1.

[0137] That is, in embodiment 2, the controller U21 controls the rotation speed of the spin chuck 3 so that the rotation speed of the substrate W when switching from a state in which the second guard G2 receives the rinsing liquid in the second period T2 to a state in which the first guard G1 receives the rinsing liquid in the first period T1 is smaller than the rotation speed of the substrate W in the first period T1.

[0138] Therefore, according to the second embodiment, when switching from receiving liquid by the second guard G2 to receiving liquid by the first guard G1, splashing of the rinsing liquid by the first guard G1 can be suppressed.

[0139] Next, a substrate processing method performed by the substrate processing apparatus 500 according to the second embodiment will be described with reference to Fig. 2, Fig. 11, and Fig. 12. Fig. 11 and Fig. 12 are flowcharts showing the substrate processing method according to the second embodiment. As shown in Fig. 11 and Fig. 12, the substrate processing method includes steps S21 to S34. The substrate processing method is performed by the substrate processing apparatus 500 for each substrate W.

[0140] 2 and 11, in step S21, the processing device U1 of the substrate processing device 500 starts rotating the substrate W. Other than that, the process of step S21 is similar to the process of step S1 in FIG.

[0141] Next, the substrate processing apparatus 500 performs step S22 and step S23 in parallel during a processing period Tx (FIG. 6).

[0142] That is, in step S2, the processing apparatus U1 of the substrate processing apparatus 500 supplies a processing liquid to the substrate W during rotation to process the substrate W.

[0143] On the other hand, in step S3, the substrate processing apparatus 500 starts recovering the processing liquid. Therefore, the processing liquid scattered from the substrate W is recovered into the recovery tank TR through the recovery pipe Q2.

[0144] Other than that, the processes in steps S22 and S23 are similar to the processes in steps S2 and S3 in FIG. 5, respectively.

[0145] After the step S22 is completed, the substrate processing apparatus 500 continues to collect the processing liquid, in the same manner as after the step S2 is completed as described with reference to FIG.

[0146] Next, in step S24, the processing apparatus U1 of the substrate processing apparatus 500 stops the supply of the processing liquid to the rotating substrate W, and shakes off the processing liquid adhering to the substrate W. Step S24 is performed during a shaking-off period Ty (FIG. 6).

[0147] Specifically, the control unit U21 controls the valve V1 so that the nozzle 9 stops supplying the processing liquid to the substrate W. As a result, the valve V1 closes and the supply of the processing liquid from the nozzle 9 is stopped. In addition, the control unit U21 controls the rotation speed of the spin chuck 3 via the spin motor 7 so that the rotation speed of the substrate W during the shake-off period Ty is greater than the rotation speed of the substrate W during the processing period Tx. When the shake-off period Ty ends, the process proceeds to step S25.

[0148] Next, in step S25, the control unit U21 controls the rotation speed of the spin chuck 3 via the spin motor 7 so that the rotation speed of the substrate W is lower than the rotation speed of the substrate W during the shake-off period Ty. Then, the process proceeds to steps S26 and S27 in FIG.

[0149] Next, as shown in FIG. 12, the substrate processing apparatus 500 executes step S26 and steps S27 to S30 in parallel.

[0150] That is, in step S26, the processing apparatus U1 of the substrate processing apparatus 500 supplies a rinsing liquid to the rotating substrate W to wash away the processing liquid adhering to the substrate W. Otherwise, the process of step S26 is similar to the process of step S5 in Fig. 5. Step S26 is performed over a second period T2 (Fig. 6) and a first period T1 (Fig. 6) subsequent to the second period T2.

[0151] On the other hand, in step S27, the control unit U21 determines whether or not the second period T2 has ended.

[0152] If it is determined in step S27 that the second period T2 has not ended (No), the control unit U21 waits until the second period T2 ends.

[0153] In particular, during the second period T2, the first guard G1 does not receive the rinsing liquid scattered from the substrate W, and does not prohibit the rinsing liquid from flowing into the recovery pipe Q2. Also, during the second period T2, the second guard G2 receives the rinsing liquid scattered from the substrate W, and supplies the rinsing liquid to the recovery pipe Q2. Furthermore, during part or all of the second period T2, the flow path of the recovery pipe Q2 is open. Therefore, during the second period T2, the processing liquid adhering to the second guard G2 and the recovery pipe Q2 is transported from the recovery pipe Q2 to the recovery tank TR by the rinsing liquid.

[0154] On the other hand, if it is determined in step S27 that the second period T2 has ended (Yes), the process proceeds to step S28.

[0155] Next, in step S28, the prohibition unit 15 of the substrate processing apparatus 500 prohibits the inflow of the rinse liquid into the recovery pipe Q2.

[0156] Specifically, the control unit U21 controls the first lifting mechanism D1 so that the first guard G1 is located at the liquid receiving position. As a result, the first guard G1 is located at the liquid receiving position. Therefore, the first guard G1 prohibits the inflow of the rinse liquid into the recovery pipe Q2.

[0157] Next, in step S29, the substrate processing apparatus 500 starts discharging the rinse liquid. Therefore, the rinse liquid scattered from the substrate W is recovered into the drain tank U4 through the discharge pipe Q1. Step S29 is executed in the first period T1. In addition, the processing of step S29 is the same as the processing of step S6 in FIG. 5.

[0158] Next, in step S30, the control unit U21 controls the rotation speed of the spin chuck 3 via the spin motor 7 so that the rotation speed of the substrate W is higher than the rotation speed of the substrate W in the second period T2. Step S30 is executed in the first period T1. Therefore, in the first period T1, the rinsing process is executed at a rotation speed higher than the rotation speed of the substrate W in the second period T2.

[0159] Since step S28 is executed before step S29, the inflow of the rinse liquid into the recovery pipe Q2 is prohibited during the execution of steps S26 and S29. That is, in the first period T1, the inflow of the rinse liquid into the recovery pipe Q2 is prohibited. Therefore, also in the first period T1 following the second period T2, the substrate processing apparatus 500 continues to recover the processing liquid.

[0160] Next, in step S31, the processing apparatus U1 of the substrate processing apparatus 500 rotates the substrate W to shake off the rinse liquid adhering to the substrate W and dries the substrate W.

[0161] Next, in step S32, the processing apparatus U1 stops the rotation of the substrate W. In addition, the processing of step S32 is the same as the processing of step S8 in FIG. 5.

[0162] Next, in step S33, the substrate processing apparatus 500 stops discharging the rinsing liquid. Otherwise, the process in step S32 is similar to the process in step S9 in FIG.

[0163] Next, in step S34, the substrate processing apparatus 500 stops collecting the processing liquid. Otherwise, the process of step S34 is similar to the process of step S10 in Fig. 5. When step S34 is completed, a series of processes for one substrate W is completed. Note that step S33 may be performed after step S34.

[0164] As described above with reference to FIGS. 11 and 12, according to the substrate processing method of the second embodiment, in the first period T1 (FIG. 6) for the rinsing process, the rinsing liquid is prohibited from flowing into the recovery pipe Q2 (step S28). Therefore, the processing liquid can be collected through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. As a result, a sufficient time can be secured for the collection of the processing liquid, and the collection rate of the processing liquid can be improved. In addition, since the rinsing liquid does not flow into the collection pipe Q2 and the collection tank TR in the first period T1, the concentration of the processing liquid in the collection tank TR can be smoothly adjusted. Furthermore, according to the second embodiment, the collection of the processing liquid by the rinsing liquid is performed only in the second period T2 (step S27), so that the influence of the rinsing liquid on the adjustment of the concentration of the processing liquid in the collection tank TR can be reduced.

[0165] In the semiconductor manufacturing method according to the second embodiment, the semiconductor substrate W is processed by a substrate processing method including steps S21 to S34 to manufacture a semiconductor, which is the processed semiconductor substrate W. That is, in the semiconductor manufacturing method according to the second embodiment, the semiconductor substrate W is processed by the substrate processing apparatus 500 to manufacture a semiconductor, which is the processed semiconductor substrate W.

[0166] Here, when the processing apparatus U1 of the substrate processing apparatus 500 processes a plurality of substrates W successively, steps S21 to S32 are repeatedly executed, and steps S33 and S34 are executed in processing the last substrate W of the plurality of substrates W. In this case, by opening the recovery valve Q21 and the exhaust valve Q11 in steps S23 and S29 in processing the first substrate W of the plurality of substrates W, the recovery valve Q21 and the exhaust valve Q11 are kept open in processing the second and subsequent substrates W.

[0167] Next, a more preferred example of the second embodiment will be described with reference to Figs. 13 and 14. Figs. 13 and 14 will describe a case where the processing liquid is a phosphoric acid liquid. Fig. 13 is a diagram showing a preferred configuration of a substrate processing apparatus 500 according to the second embodiment. As shown in Fig. 13, the substrate processing apparatus 500 preferably includes two recovery tanks TR. Hereinafter, one of the two recovery tanks TR may be referred to as a "first recovery tank TR1" and the other recovery tank TR may be referred to as a "second recovery tank TR2". In addition, the substrate processing apparatus 500 preferably includes a recovery pipe Q2A and a recovery valve Q21A.

[0168] Specifically, the processing liquid supply unit U3 of the substrate processing apparatus 500 includes a storage unit 102 for storing a phosphoric acid liquid, and a new liquid supply unit 140. The phosphoric acid liquid is prepared in the storage unit 102. The storage unit 102 prepares the phosphoric acid liquid to a target temperature and a target concentration.

[0169] The storage unit 102 includes a first storage unit 110, a second storage unit 120, and a third storage unit 130. The first storage unit 110 supplies phosphoric acid liquid to the processing device U1. The second storage unit 120 and the third storage unit 130 alternately replenish the first storage unit 110 with phosphoric acid liquid. In addition, the second storage unit 120 and the third storage unit 130 alternately recover the phosphoric acid liquid used in the processing device U1.

[0170] The first reservoir 110 includes a supply tank TD, a first pipe 113, and a first measuring unit 114. The supply tank TD stores a phosphoric acid liquid as a treatment liquid.

[0171] The first pipe 113 connects the supply tank TD and the processing device U1 via the pipe P1. The first pipe 113 also has a circulation pipe 113a that returns to the supply tank TD midway.

[0172] The first measuring unit 114 is attached to the supply tank TD. The first measuring unit 114 directly or indirectly measures the concentration of the phosphoric acid solution stored in the supply tank TD.

[0173] The first reservoir 110 further includes a pump 115a, a heater 115b, a filter 115c, a valve 115d, and a valve 115e. The pump 115a, the heater 115b, the filter 115c, and the valve 115d are disposed in the first pipe 113. The valve 115e is disposed in the circulation pipe 113a.

[0174] The pump 115a sucks in the phosphoric acid solution once, and then pushes the sucked phosphoric acid solution downstream. The phosphoric acid solution is pushed out by the pump 115a into the first pipe 113. The heater 115b heats the phosphoric acid solution.

[0175] The filter 115c filters suspended solids from the phosphoric acid solution. The valve 115d controls the flow of the phosphoric acid solution. When the valve 115d is open, the phosphoric acid solution flows toward the processing device U1. When the valve 115d is closed, the phosphoric acid solution does not flow from the processing solution supply device U3 toward the processing device U1.

[0176] Furthermore, the valve 115e controls the flow of the phosphoric acid solution. When the valve 115e is opened, the phosphoric acid solution flows toward the supply tank TD, so that the phosphoric acid solution can be circulated. When the valve 115e is closed, the circulation of the phosphoric acid solution is stopped.

[0177] For example, by opening valve 115e while closing valve 115d, the phosphoric acid solution in supply tank TD circulates through circulation pipe 113a. At this time, heater 115b heats the circulating phosphoric acid solution, so that the phosphoric acid solution in supply tank TD can be set to a target temperature.

[0178] Furthermore, by opening the valves 115d and 115e, the phosphoric acid solution in the supply tank TD is circulated through the circulation pipe 113a and is supplied to the processing device U1 through the first pipe 113. Therefore, the processing device U1 can process the substrate W with the phosphoric acid solution at the target temperature and the target concentration.

[0179] The first storage unit 110 further includes a first water supply unit 116a, a first phosphoric acid supply unit 116b, and a first gas supply unit 116c. The first water supply unit 116a supplies water (e.g., deionized water) to the supply tank TD. The first phosphoric acid supply unit 116b supplies phosphoric acid liquid to the supply tank TD. The first gas supply unit 116c supplies gas to the supply tank TD.

[0180] For example, the concentration of the phosphoric acid solution in the supply tank TD is controlled by controlling the amount of water supplied from the first water supply unit 116a and / or the amount of phosphoric acid supplied from the first phosphoric acid supply unit 116b based on the measurement result of the first measurement unit 114. As a result, the concentration of the phosphoric acid solution is set to the target concentration.

[0181] The supply tank TD has a main tank 112a and a circulation tank 112b. The main tank 112a is disposed so that phosphoric acid liquid overflowing from the circulation tank 112b flows into the main tank 112a.

[0182] The end of the circulation pipe 113a is located in the circulation tank 112b. The phosphoric acid solution that has passed through the circulation pipe 113a returns to the circulation tank 112b of the supply tank TD, overflows from the circulation tank 112b, reaches the main tank 112a, and passes through the first pipe 113 again.

[0183] The first reservoir 110 may further include a liquid level sensor 114a. The liquid level sensor 114a detects the liquid level of the phosphoric acid liquid in the supply tank TD.

[0184] The second storage section 120 has a configuration corresponding to the first storage section 110. The second storage section 120 includes a first recovery tank TR1, a second pipe 123, a second measurement section 124, a pump 125a, a heater 125b, a filter 125c, a valve 125d, a valve 125e, a second water supply section 126a, a second phosphoric acid supply section 126b, and a second gas supply section 126c. To avoid redundant description, duplicated descriptions of the second storage section 120 will be omitted.

[0185] The second pipe 123 of the second storage section 120 connects the first recovery tank TR1 and the supply tank TD. Furthermore, the valve 125d controls the flow of the phosphoric acid solution from the first recovery tank TR1 toward the supply tank TD. When the valve 125d is opened, the phosphoric acid solution flows toward the supply tank TD. When the valve 125d is closed, the phosphoric acid solution stops flowing from the first recovery tank TR1 toward the supply tank TD.

[0186] Furthermore, by opening the valve 125e, the phosphoric acid solution flows toward the first recovery tank TR1, allowing the phosphoric acid solution to be circulated. By closing the valve 125e, the circulation of the phosphoric acid solution is stopped.

[0187] For example, by opening valve 125e while closing valve 125d, the phosphoric acid solution in first recovery tank TR1 circulates through circulation pipe 123a. At this time, heater 125b heats the circulating phosphoric acid solution, so that the phosphoric acid solution in first recovery tank TR1 can be set to a target temperature.

[0188] Furthermore, by opening the valves 125d and 125e, the phosphoric acid solution in the first recovery tank TR1 circulates through the circulation pipe 123a and is supplied to the supply tank TD through the second pipe 123. Therefore, the first recovery tank TR1 can be replenished with the phosphoric acid solution in the supply tank TD.

[0189] The second pipe 123 has a circulation pipe 123a that returns to the first recovery tank TR1 midway. Furthermore, the recovery pipe Q2 connects the treatment device U1 and the first recovery tank TR1. The phosphoric acid solution recovered by the second guard G2 in the treatment device U1 flows through the recovery pipe Q2. The phosphoric acid solution that passes through the recovery pipe Q2 returns to the main tank 122a of the first recovery tank TR1.

[0190] In addition, a recovery valve Q21 is inserted in the recovery pipe Q2. The recovery valve Q21 controls the flow of the phosphoric acid solution in the recovery pipe Q2. When the recovery valve Q21 is open, the phosphoric acid solution flows from the treatment device U1 toward the first recovery tank TR1. When the recovery valve Q21 is closed, the phosphoric acid solution stops flowing toward the first recovery tank TR1.

[0191] The second water supply unit 126a supplies water (eg, deionized water) to the first recovery tank TR1. The second phosphoric acid supply unit 126b supplies phosphoric acid liquid to the first recovery tank TR1. The second gas supply unit 126c supplies gas to the first recovery tank TR1.

[0192] For example, the concentration of the phosphoric acid solution in the first recovery tank TR1 is controlled by controlling the amount of water supplied from the second water supply unit 126a and / or the amount of phosphoric acid supplied from the second phosphoric acid supply unit 126b based on the measurement result of the second measurement unit 124. As a result, the concentration of the phosphoric acid solution in the first recovery tank TR1 is set to a target concentration.

[0193] The third storage section 130 has a configuration corresponding to the first storage section 110 and / or the second storage section 120. The third storage section 130 includes a second recovery tank TR2, a third pipe 133, a third measurement section 134, a pump 135a, a heater 135b, a filter 135c, a valve 135d, a valve 135e, a third water supply section 136a, a third phosphoric acid supply section 136b, and a third gas supply section 136c. To avoid redundant explanation, duplicated descriptions of the third storage section 130 will be omitted.

[0194] The third pipe 133 of the third storage section 130 connects the second recovery tank TR2 and the supply tank TD. The valve 135d controls the flow of the phosphoric acid solution from the second recovery tank TR2 to the supply tank TD. When the valve 135d is opened, the phosphoric acid solution flows toward the supply tank TD. When the valve 135d is closed, the phosphoric acid solution stops flowing from the second recovery tank TR2 to the supply tank TD.

[0195] Furthermore, by opening the valve 135e, the phosphoric acid solution flows toward the second recovery tank TR2, allowing the phosphoric acid solution to be circulated. By closing the valve 135e, the circulation of the phosphoric acid solution is stopped.

[0196] For example, by opening valve 135e while closing valve 135d, the phosphoric acid solution in second recovery tank TR2 circulates through circulation pipe 133a. At this time, heater 135b heats the circulating phosphoric acid solution, so that the phosphoric acid solution in second recovery tank TR2 can be set to a target temperature.

[0197] Furthermore, by opening the valves 135d and 135e, the phosphoric acid solution in the second recovery tank TR2 circulates through the circulation pipe 133a and is supplied to the supply tank TD through the third pipe 133. Therefore, the second recovery tank TR2 can be replenished with the phosphoric acid solution in the supply tank TD.

[0198] Furthermore, the recovery pipe Q2A connects the processing device U1 and the second recovery tank TR2. Specifically, the recovery pipe Q2A branches off from the recovery pipe Q2 and extends to the second recovery tank TR2. The phosphoric acid solution recovered by the second guard G2 in the processing device U1 flows through the recovery pipe Q2A. The phosphoric acid solution passing through the recovery pipe Q2A returns to the main tank 132a of the second recovery tank TR2. A recovery valve Q21A is also inserted in the recovery pipe Q2A. The recovery valve Q21A controls the flow of the phosphoric acid solution in the recovery pipe Q2A. When the recovery valve Q21A is opened, the phosphoric acid solution flows from the processing device U1 toward the second recovery tank TR2. When the recovery valve Q21A is closed, the phosphoric acid solution stops flowing toward the second recovery tank TR2.

[0199] The third water supply unit 136a supplies water (eg, deionized water) to the second collection tank TR2. The third phosphoric acid supply unit 136b supplies phosphoric acid liquid to the second collection tank TR2. The third gas supply unit 136c supplies gas to the second collection tank TR2.

[0200] For example, the concentration of the phosphoric acid solution in the second recovery tank TR2 is controlled by controlling the amount of water supplied from the third water supply unit 136a and / or the amount of phosphoric acid supplied from the third phosphoric acid supply unit 136b based on the measurement result of the third measurement unit 134. As a result, the concentration of the phosphoric acid solution in the second recovery tank TR2 is set to a target concentration.

[0201] The pipe P1 connects the first pipe 113 of the first reservoir 110 to the processing device U1. The valve V1 controls the flow of the phosphoric acid solution in the pipe P1. When the valve V1 is opened, the phosphoric acid solution is discharged onto the substrate W through the nozzle 9 toward the processing device U1. When the valve V1 is closed, the phosphoric acid solution stops flowing toward the processing device U1.

[0202] The new liquid supply unit 140 has a storage tank 142, a pipe 143, and a phosphoric acid supply unit 146. Phosphoric acid is stored in the storage tank 142. The phosphoric acid supply unit 146 supplies phosphoric acid liquid to the storage tank 142. The pipe 143 connects the storage tank 142 with the first recovery tank TR1 and the second recovery tank TR2. The new liquid supply unit 140 supplies the phosphoric acid liquid from the storage tank 142 to the first recovery tank TR1 or the second recovery tank TR2 via the pipe 143.

[0203] The configuration of the substrate processing apparatus 500 shown in FIG.

[0204] Hereinafter, with reference to Fig. 14, a change in the flow of phosphoric acid solution in the substrate processing apparatus 500 shown in Fig. 13 will be described. Figs. 14(a) to 14(f) are schematic diagrams for explaining a change in the flow of phosphoric acid solution in the substrate processing apparatus 500 shown in Fig. 13. In Figs. 14(a) to 14(f), the change in the amount of phosphoric acid solution in the supply tank TD, first recovery tank TR1, and second recovery tank TR2 is indicated by arrows. An upward arrow indicates an increase in the amount of phosphoric acid solution, and a downward arrow indicates a decrease in the amount of phosphoric acid solution.

[0205] As shown in FIG. 14(a), the supply tank TD starts to supply phosphoric acid liquid to the processing device U1. The supply tank TD supplies phosphoric acid liquid to the processing device U1 and circulates the phosphoric acid liquid. The first recovery tank TR1 circulates the phosphoric acid liquid. The second recovery tank TR2 circulates the phosphoric acid liquid. The second recovery tank TR2 also recovers the phosphoric acid liquid used in the processing device U1. The phosphoric acid liquid used in the processing device U1 reaches the second recovery tank TR2 through recovery pipes Q2 and Q2A. The phosphoric acid liquids in the supply tank TD, first recovery tank TR1, and second recovery tank TR2 are set to the same temperature.

[0206] As shown in Fig. 14(b), the supply tank TD continues to supply phosphoric acid liquid to the treatment device U1. The supply tank TD supplies phosphoric acid liquid to the treatment device U1 and circulates the phosphoric acid liquid. The first recovery tank TR1 supplies phosphoric acid liquid to the supply tank TD and circulates the phosphoric acid liquid. The second recovery tank TR2 continues to recover the phosphoric acid liquid used in the treatment device U1. In addition, the second recovery tank TR2 circulates the phosphoric acid liquid.

[0207] As shown in FIG. 14(c), the supply tank TD continues to supply phosphoric acid liquid to the processing device U1. The supply tank TD supplies phosphoric acid liquid to the processing device U1 and circulates the phosphoric acid liquid. The first recovery tank TR1 circulates the phosphoric acid liquid. The first recovery tank TR1 also recovers the phosphoric acid liquid used in the processing device U1. The phosphoric acid liquid used in the processing device U1 reaches the first recovery tank TR1 through recovery piping Q2. The second recovery tank TR2 circulates the phosphoric acid liquid. New phosphoric acid liquid is supplied to the second recovery tank TR2 from new liquid supply unit 140.

[0208] As shown in Fig. 14(d), the supply tank TD continues to supply phosphoric acid liquid to the treatment device U1. The supply tank TD supplies phosphoric acid liquid to the treatment device U1 and circulates the phosphoric acid liquid. The first recovery tank TR1 continues to recover the phosphoric acid liquid used in the treatment device U1. The first recovery tank TR1 also circulates the phosphoric acid liquid. The second recovery tank TR2 supplies phosphoric acid liquid to the supply tank TD and circulates the phosphoric acid liquid.

[0209] As shown in FIG. 14(e), the supply tank TD continues to supply phosphoric acid liquid to the processing device U1. The supply tank TD supplies phosphoric acid liquid to the processing device U1 and circulates the phosphoric acid liquid. The first recovery tank TR1 circulates phosphoric acid liquid. Also, new phosphoric acid liquid is supplied to the first recovery tank TR1 from a new liquid supply unit 140. The second recovery tank TR2 circulates phosphoric acid liquid. Also, the second recovery tank TR2 recovers the phosphoric acid liquid used in the processing device U1. The phosphoric acid liquid used in the processing device U1 reaches the second recovery tank TR2 through recovery pipes Q2 and Q2A.

[0210] As shown in Fig. 14(f), the supply tank TD continues to supply phosphoric acid liquid to the treatment device U1. The supply tank TD supplies phosphoric acid liquid to the treatment device U1 and circulates the phosphoric acid liquid. The first recovery tank TR1 supplies phosphoric acid liquid to the supply tank TD and circulates the phosphoric acid liquid. The second recovery tank TR2 continues to recover the phosphoric acid liquid used in the treatment device U1. In addition, the second recovery tank TR2 circulates the phosphoric acid liquid.

[0211] 14(c) to 14(f), the phosphoric acid solution having the target concentration and the target temperature can be continuously supplied to the treatment device U1. As described above, according to the second embodiment, the first recovery tank TR1 and the second recovery tank TR2 alternately recover the phosphoric acid solution used in the treatment device U1 and supply the phosphoric acid solution to the supply tank TD.

[0212] Next, the recovery timing of phosphoric acid solution by the first recovery tank TR1 and the second recovery tank TR2 will be described with reference to Fig. 15. Fig. 15 describes the case where the treatment solution is phosphoric acid solution. Fig. 15 is a time chart showing the recovery timing of phosphoric acid solution by the first recovery tank TR1 and the second recovery tank TR2. In Fig. 15, for the sake of simplicity, the treatment period Tx and the shake-off period Ty are collectively referred to as the "treatment period Tz" (see Fig. 6).

[0213] 15, a phosphoric acid treatment and a rinsing treatment are performed on one substrate W from time t1 to time t3. The same is true for times t3 to t5, t5 to t7, t7 to t9, t9 to t11, and t1 to t13.

[0214] During each treatment period Tz, phosphoric acid solution is supplied from the supply tank TD to the nozzle 9.

[0215] In the example of FIG. 15, phosphoric acid solution is recovered by the second recovery tank TR2 from time t1 to time t5. Therefore, the recovery valve Q21 is closed, and the recovery valve Q21A is open. Specifically, phosphoric acid solution is recovered by the second recovery tank TR2 in each processing period Tz, each second period T2, and each first period T1 from time t1 to time t5. Then, the concentration of the phosphoric acid solution stored in the second recovery tank TR2 is adjusted to a target concentration from time t1 to time t7, which includes the recovery period of phosphoric acid solution from time t1 to time t5. That is, in the second recovery tank TR2, the concentration of the phosphoric acid solution is adjusted while the phosphoric acid solution is recovered. Then, phosphoric acid solution is supplied from the second recovery tank TR2 to the supply tank TD from time t7 to time t9. After that, the second recovery tank TR2 repeats recovery, preparation, and supply of phosphoric acid solution in a cycle T20.

[0216] On the other hand, the first recovery tank TR1 supplies phosphoric acid solution to the supply tank TD from time t3 to time t5. That is, the first recovery tank TR1 supplies phosphoric acid solution to the supply tank TD in parallel with the recovery and concentration adjustment of the phosphoric acid solution in the second recovery tank TR2.

[0217] Then, when the supply of the phosphoric acid solution from the first recovery tank TR1 to the supply tank TD is completed, the phosphoric acid solution is recovered by the first recovery tank TR1 from time t5 to time t9. Therefore, the recovery valve Q21 is open, and the recovery valve Q21A is closed. Specifically, the phosphoric acid solution is recovered by the first recovery tank TR1 in each processing period Tz, each second period T2, and each first period T1 from time t5 to time t9. Then, the concentration of the phosphoric acid solution stored in the first recovery tank TR1 is adjusted to a target concentration from time t5 to time t11, which includes the recovery period of the phosphoric acid solution from time t5 to time t9. That is, in the first recovery tank TR1, the concentration of the phosphoric acid solution is adjusted while the phosphoric acid solution is recovered. Then, the phosphoric acid solution is supplied from the first recovery tank TR1 to the supply tank TD from time t11 to time t13. Thereafter, the first recovery tank TR1 repeats recovery, preparation, and supply of phosphoric acid solution in a cycle T10. The length of the cycle T10 is the same as the length of the cycle T20.

[0218] 15, a portion of the period T10 of the first collection tank TR1 overlaps with a portion of the period T20 of the second collection tank TR2. Therefore, the start of the period T10 of the first collection tank TR1 (e.g., time t5) is in the middle of the period T20 of the second collection tank TR2, and the end of the period T10 of the first collection tank TR1 (e.g., time t13) is in the middle of the period T20 of the next second collection tank TR2. Similarly, the start of the period T20 of the second collection tank TR2 (e.g., time t1) is in the middle of the period T10 of the first collection tank TR1, and the end of the period T20 of the second collection tank TR2 (e.g., time t9) is in the middle of the period T10 of the next first collection tank TR1.

[0219] The periods T10 and T20 are set in advance, for example, taking into consideration the specifications and throughput of the substrate processing apparatus 500, and the processing contents of the substrate W. Therefore, the length of the second period T2 for recovering the phosphoric acid solution using the rinsing liquid is set so that the periods T10 and T20 are maintained and the relationship between the periods T10 and T20 is maintained. If the second period T2 is long, the recovery rate of the phosphoric acid solution can be improved, but if the second period T2 is too long, the concentration of the phosphoric acid solution stored in the first recovery tank TR1 and the second recovery tank TR2 is reduced by the rinsing liquid. As a result, it takes time to adjust the concentration, and the periods T10 and T20 cannot be maintained. Therefore, in the second embodiment, the longest time is set as the second period T2 within a range in which the periods T10 and T20 can be maintained and the relationship between the periods T10 and T20 can be maintained.

[0220] Here, the processing liquid supplying device U3 may be provided for one processing device U1, or may be shared by a plurality of processing devices U1. The fewer the processing devices U1 that the processing liquid supplying device U3 supplies, the longer the second period T2 can be set. The reason is as follows. That is, the fewer the processing devices U1 to which the processing liquid supplying device U3 supplies phosphoric acid liquid, the smaller the amount of phosphoric acid liquid in the supply tank TD decreases. Therefore, the periods T10 and T20 can be set longer. As a result, even if the amount of rinsing liquid flowing into the first recovery tank TR1 and the second recovery tank TR2 is large, a sufficient concentration adjustment period can be secured. Therefore, the phosphoric acid liquid in the first recovery tank TR1 and the second recovery tank TR2 can be set to the target concentration before the phosphoric acid liquid in the supply tank TD reaches the lower limit.

[0221] The second period T2 is not particularly limited, but is, for example, 1 second or more and 3 seconds or less. For example, when the processing liquid supplying device U3 is provided for one processing device U1, the second period T2 is 3 seconds. For example, when the processing liquid supplying device U3 is shared by six processing devices U1, the second period T2 is 1 second.

[0222] (Embodiment 3) A substrate processing apparatus 500A according to a third embodiment of the present invention will be described with reference to Figs. 16 to 17(b). The main difference between the third embodiment and the first embodiment is that the substrate processing apparatus 500A according to the third embodiment includes a common pipe Q3 into which a rinsing liquid and a processing liquid flow at different times. The following mainly describes the differences between the third embodiment and the first embodiment. In addition, Fig. 3 will be referred to as appropriate in the description of the third embodiment.

[0223] Fig. 16 is a diagram showing a substrate processing apparatus 500A according to a third embodiment. As shown in Fig. 16, the substrate processing apparatus 500A includes a common pipe Q3 and a prohibition unit 15A. In the third embodiment, the first guard G1 does not function as a "prohibition unit." The prohibition unit 15A according to the third embodiment includes a valve Q31.

[0224] The common pipe Q3 is connected to the first cup C1. A processing liquid and a rinsing liquid flow into the common pipe Q3 at different times via the first cup C1. Specifically, during a processing period Tx (FIG. 3) using the processing liquid, the processing liquid flows into the common pipe Q3. During a first period T1 (FIG. 3) for the rinsing process, the rinsing liquid flows into the common pipe Q3. The common pipe Q3 is located upstream of the recovery pipe Q2 and the discharge pipe Q1, and is connected to the recovery pipe Q2 and the discharge pipe Q1. Specifically, the recovery pipe Q2 and the discharge pipe Q1 branch off from downstream of the common pipe Q3.

[0225] The prohibition unit 15A prohibits the inflow of the rinsing liquid into the recovery pipe Q2 during the first period T1 (FIG. 3), similar to the prohibition unit 15 shown in FIG. 1. Therefore, in the third embodiment, similar to the first embodiment, the processing liquid can be recovered through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. As a result, a sufficient time can be secured for the recovery of the processing liquid, and the recovery rate of the processing liquid can be improved. In addition, since the rinsing liquid does not flow into the recovery pipe Q2 and the recovery tank TR during the first period T1, the concentration of the processing liquid in the recovery tank TR can be smoothly adjusted. Other effects of the third embodiment are similar to those of the first embodiment.

[0226] The processor of the control unit U21 executes a computer program stored in the storage device of the memory unit U22 to control the spin chuck 3, the spin motor 7, the nozzle moving unit 11, the lifting unit 17, and the cup unit 19. The processor of the control unit U21 also executes a computer program stored in the storage device of the memory unit U22 to control the valve V1, the processing liquid supply unit U3, the valve V2, the drain valve Q11, the recovery valve Q21, and the prohibition unit 15A.

[0227] Next, the details of the recovery operation of the processing liquid by the substrate processing apparatus 500A will be described with reference to Fig. 17(a) and Fig. 17(b). Fig. 17(a) is a diagram showing a process of recovering the processing liquid during a processing period Tx using the processing liquid. Fig. 17(b) is a diagram showing a process of recovering the processing liquid during a first period T1 for a rinsing process.

[0228] As shown in Fig. 17(a), during the processing period Tx, the first guard G1 is located at the liquid receiving position. Therefore, during the processing period Tx, the first guard G1 receives the processing liquid splashed from the rotating substrate W, and guides the processing liquid to the common pipe Q3 via the first cup C1. During the processing period Tx, the discharge valve Q11 is closed, and the recovery valve Q21 and the valve Q31 are open. Therefore, the processing liquid is recovered in the recovery tank TR from the common pipe Q3 through the recovery pipe Q2. During the processing period Tx, the processing liquid does not flow into the waste liquid tank U4.

[0229] Next, as shown in FIG. 17(b), in the first period T1, the first guard G1 is located at the liquid receiving position. Therefore, in the first period T1, the first guard G1 receives the rinsing liquid scattered from the rotating substrate W, and guides the rinsing liquid to the common pipe Q3 via the first cup C1. In addition, in the first period T1, the discharge valve Q11 and the recovery valve Q21 are open. Furthermore, in the first period T1, the valve Q31 is closed. That is, the valve Q31 prohibits the rinsing liquid from flowing into the recovery pipe Q2 in the first period T1. Therefore, in the third embodiment, the processing liquid can be recovered through the recovery pipe Q2 in parallel with the discharge of the rinsing liquid. As a result, a sufficient time can be secured for the recovery of the processing liquid, and the recovery rate of the processing liquid can be improved. In addition, since the rinsing liquid does not flow into the recovery pipe Q2 and the recovery tank TR in the first period T1, the concentration of the processing liquid in the recovery tank TR can be smoothly adjusted.

[0230] Specifically, in the first period T1, the treatment liquid remaining in the recovery pipe Q2 moves toward the recovery tank TR due to its own weight.

[0231] The substrate processing method and semiconductor manufacturing method according to the third embodiment are similar to the substrate processing method and semiconductor manufacturing method according to the first embodiment described with reference to Fig. 5. However, in the third embodiment, in step S4 of Fig. 5, prohibition unit 15A prohibits the flow of the rinsing liquid into recovery pipe Q2.

[0232] (Embodiment 4) A substrate processing apparatus 500A according to a fourth embodiment of the present invention will be described with reference to Fig. 16 and Figs. 18(a) to 19(b). The substrate processing apparatus 500A according to the fourth embodiment mainly differs from the third embodiment in that the substrate processing apparatus 500A according to the fourth embodiment recovers the processing liquid using a rinsing liquid. Moreover, the fourth embodiment is common to the second embodiment in that the processing liquid is recovered using a rinsing liquid. Therefore, Fig. 6 will be referred to as appropriate in the description of the fourth embodiment. Below, the differences between the fourth embodiment and the third and second embodiments will be mainly described.

[0233] Fig. 18(a) is a diagram showing a process of recovering the processing liquid during a processing period Tx using the processing liquid. Fig. 18(b) is a diagram showing a process of recovering the processing liquid during a processing liquid shaking-off period Ty. Fig. 19(a) is a diagram showing a process of recovering the processing liquid during a second period T2 for a rinsing process. Fig. 19(b) is a diagram showing a process of recovering the processing liquid during a first period T1 for a rinsing process.

[0234] As shown in FIG. 18(a), the operation during the processing period Tx in the fourth embodiment is similar to the operation during the processing period Tx in the third embodiment described with reference to FIG. 17(a), and therefore a description thereof will be omitted.

[0235] Next, as shown in FIG. 18(b), during the washing-off period Ty of the processing liquid, the states of the discharge valve Q11, the collection valve Q21, and the valve Q31 are the same as the states of the discharge valve Q11, the collection valve Q21, and the valve Q31 during the processing period Tx. Therefore, during the washing-off period Ty, the processing liquid is collected in the collection tank TR, just like during the processing period Tx. It is not necessary to provide the washing-off period Ty. For example, when the processing liquid is SPM, it is not necessary to provide the washing-off period Ty.

[0236] 19(a), in a second period T2 for the rinsing process, the first guard G1 receives the rinsing liquid scattered from the rotating substrate W and guides the rinsing liquid to the common pipe Q3 via the first cup C1. In addition, in the second period T2, the discharge valve Q11 is closed, and the recovery valve Q21 and the valve Q31 are open. Therefore, the processing liquid adhering to the first guard G1, the processing liquid adhering to the common pipe Q3, and the processing liquid adhering to the recovery pipe Q2 are transported to the recovery tank TR by the rinsing liquid. In addition, in the second period T2, the processing liquid does not flow into the drain tank U4.

[0237] Next, as shown in FIG. 19(b), the operation in the first period T1 in the fourth embodiment is similar to the operation in the first period T1 in the third embodiment described with reference to FIG. 17(b), and therefore the description will be omitted.

[0238] The substrate processing method and semiconductor manufacturing method according to the fourth embodiment are similar to the substrate processing method and semiconductor manufacturing method according to the third embodiment described with reference to Figures 11 and 12. However, in the fourth embodiment, in step S28 of Figure 12, prohibition unit 15A prohibits the flow of the rinsing liquid into recovery pipe Q2.

[0239] Next, the present invention will be described in detail based on examples, but the present invention is not limited to the following examples. EXAMPLES

[0240] In the embodiment of the present invention, the substrate processing apparatus 500 according to the second embodiment described with reference to FIG. 2 and FIG. 9(a)-FIG. 10(b) was used. In the comparative example, the substrate processing apparatus described with reference to FIG. 7(a)-FIG. 8(b) was used. Phosphoric acid solution was used as the processing solution. The amount of phosphoric acid solution discharged to the discharge pipe Q1 of the embodiment and the discharge pipe QX of the comparative example was detected. The amount of phosphoric acid solution discharged was detected downstream of the discharge valve Q11 of the embodiment and the discharge valve QX1 of the comparative example. The recovery rate of phosphoric acid solution was evaluated based on the amount of phosphoric acid solution discharged. Therefore, it is shown that the smaller the amount of phosphoric acid solution discharged to the discharge pipes Q1 and QX, the higher the recovery rate of phosphoric acid solution.

[0241] Fig. 20(a) is a diagram showing the amount of phosphoric acid liquid discharged in the substrate processing apparatus according to the comparative example, and Fig. 20(b) is a diagram showing the amount of phosphoric acid liquid discharged in the substrate processing apparatus 500 according to the present embodiment.

[0242] As shown in Figs. 20(a) and 20(b), in this embodiment and the comparative example, the phosphoric acid solution shaking-off periods Ty, Tyc (Figs. 9(b) and 7(b)) were 3 seconds.

[0243] Also, as shown in Fig. 20(a), the opening time of the drain valve QX1 in Fig. 8(b) according to the comparative example was 12 seconds. In this case, the amount of phosphoric acid solution discharged to the drain pipe QX downstream of the drain valve QX1 was 160 cc.

[0244] On the one hand, as shown in FIG. 20(b), the opening time of the discharge valve Q11 in FIG. 10(b) according to this embodiment was 12 seconds. In this case, the drainage volume of the phosphoric acid solution into the discharge pipe Q1 downstream of the discharge valve Q11 was 0.09 cc.

[0245] Therefore, the drainage volume of the phosphoric acid solution in this embodiment was significantly less than that in the comparative example. Thus, in this embodiment, it was confirmed that the recovery rate of the phosphoric acid solution was significantly improved compared to the comparative example.

[0246] As described above, the embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above embodiments, and can be implemented in various forms without departing from the gist thereof. Also, the plurality of components disclosed in the above embodiments can be modified as appropriate. For example, a certain component among all the components shown in a certain embodiment may be added to the components of another embodiment, or some of the components among all the components shown in a certain embodiment may be deleted from the embodiment.

[0247] Also, the drawings schematically show each component mainly for easy understanding of the invention, and the thickness, length, number, interval, etc. of each illustrated component may be different from the actual ones for convenience in drawing preparation. Also, the configuration of each component shown in the above embodiments is an example and is not particularly limited, and it goes without saying that various changes can be made without substantially departing from the effects of the present invention.

Industrial Applicability

[0248] The present invention relates to a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method, and has industrial applicability.

Explanation of Signs

[0249] 3 Spin chuck (substrate holding part) 15, 15A Prohibited part 500, 500A Substrate processing apparatus G1 First guard G2 2nd Guard Q1 Exhaust piping Q2, Q2A Recovery piping Q3 Common piping Q31 Valve TR Collection Tank U21 Control section W substrate

Claims

1. 1. A substrate processing apparatus that supplies a processing liquid to a substrate and processes the substrate with the processing liquid, a substrate holder that holds and rotates the substrate; a recovery pipe into which the processing liquid splashed from the substrate during rotation flows; a recovery tank connected to the recovery pipe and configured to recover the treatment liquid through the recovery pipe; a drain pipe into which the rinsing liquid splashed from the rotating substrate flows during a first period in which the supply of the processing liquid to the substrate is stopped and the rinsing liquid is supplied to the rotating substrate; a prohibition unit capable of prohibiting the rinse liquid from flowing into the recovery pipe; a control unit that controls the prohibition unit so as to prohibit the rinsing liquid from flowing into the recovery pipe during the first period; Equipped with During a part or the whole of the first period, the flow path of the recovery pipe is open, The prohibition unit is a first guard disposed along a circumferential direction of the substrate holding portion; a second guard disposed along a circumferential direction of the substrate holding portion at a position different from that of the first guard; Including, the first guard receives the rinsing liquid splashed from the substrate during the first period and guides the rinsing liquid to the discharge pipe; the second guard receives the rinse liquid splashed from the substrate during a second period that is a period before the first period and guides the rinse liquid to the recovery pipe; During a part or the whole of the second period, the flow path of the recovery pipe is open, the second guard receives the processing liquid scattered from the substrate during a processing period in which the substrate is processed with the processing liquid and during a shaking-off period in which the processing liquid is shaken off from the substrate after the processing period and before the second period, and guides the processing liquid to the recovery pipe; The treatment liquid includes a phosphoric acid liquid, a rotation speed of the substrate during the shake-off period is higher than a rotation speed of the substrate during the processing period and a rotation speed of the substrate during the second period.

2. The substrate processing apparatus according to claim 1 , wherein the recovery pipe and the discharge pipe are separate pipes of different series.

3. The substrate processing apparatus according to claim 2 , wherein the first guard inhibits the rinsing liquid from flowing into the recovery pipe during the first period.

4. during the second period in which the rinsing liquid is being supplied to the rotating substrate after the processing liquid has been supplied to the rotating substrate, the first guard does not receive the rinsing liquid splashed from the substrate and does not inhibit the rinsing liquid from flowing into the recovery pipe; The substrate processing apparatus according to claim 3 , wherein the second period is a period that is continuous with the first period and that includes a time point at which the supply of the rinsing liquid to the substrate starts.

5. 5. The substrate processing apparatus of claim 4, wherein the control unit controls the rotation speed of the substrate holding unit so that a rotation speed of the substrate when switching from a state in which the second guard receives the rinsing liquid in the second period to a state in which the first guard receives the rinsing liquid in the first period is smaller than a rotation speed of the substrate in the first period.

6. The substrate processing apparatus according to claim 1 , wherein the second period is continuous with the first period, is shorter than the first period, and includes a time when supply of the rinsing liquid to the substrate is started.

7. The substrate processing apparatus according to claim 1 , wherein the supply of the processing liquid to the substrate is stopped during the shaking-off period.

8. A substrate processing apparatus as described in any one of claims 1 to 7, wherein the control unit controls the rotation speed of the substrate holding unit after the shake-off period has elapsed and before the second period so that it is smaller than the rotation speed of the substrate during the shake-off period.

9. 1. A substrate processing method performed by a substrate processing apparatus that supplies a processing liquid to a substrate and processes the substrate with the processing liquid, comprising: the substrate processing apparatus includes a recovery pipe, a recovery tank connected to the recovery pipe, a discharge pipe, a substrate holding unit that holds and rotates the substrate, a first guard that is disposed along a circumferential direction of the substrate holding unit, and a second guard that is disposed along the circumferential direction of the substrate holding unit at a position different from that of the first guard, The substrate processing method includes: supplying the processing liquid to the substrate while rotating to process the substrate; recovering the processing liquid scattered from the substrate into the recovery tank through the recovery pipe; supplying a rinse liquid to the substrate while rotating after the treatment liquid has been supplied to the substrate; prohibiting an inflow of the rinsing liquid into the recovery pipe during a first period in which the rinsing liquid is supplied to the substrate; discharging the rinse liquid through the discharge pipe during the first period; during a second period that is a period before the first period, the second guard receives the rinsing liquid splashed from the substrate and supplies the rinsing liquid to the recovery pipe; Including, During a part or the whole of the first period, the flow path of the recovery pipe is open, In the step of inhibiting the inflow of the rinse liquid, the first guard receives the rinsing liquid splashed from the substrate during the first period and supplies the rinsing liquid to the discharge pipe; During a part or the whole of the second period, the flow path of the recovery pipe is open, the second guard receives the processing liquid scattered from the substrate during a processing period in which the substrate is processed with the processing liquid and during a shaking-off period in which the processing liquid is shaken off from the substrate after the processing period and before the second period, and guides the processing liquid to the recovery pipe; The treatment liquid includes a phosphoric acid liquid, A substrate processing method, wherein a rotation speed of the substrate during the shake-off period is higher than a rotation speed of the substrate during the processing period and a rotation speed of the substrate during the second period.

10. A semiconductor manufacturing method for manufacturing a semiconductor by processing a semiconductor substrate using a substrate processing apparatus, the semiconductor substrate being the processed semiconductor substrate, comprising: the substrate processing apparatus includes a recovery pipe, a recovery tank connected to the recovery pipe, a discharge pipe, a substrate holding unit that holds and rotates the semiconductor substrate, a first guard that is disposed along a circumferential direction of the substrate holding unit, and a second guard that is disposed along the circumferential direction of the substrate holding unit at a position different from that of the first guard, The semiconductor manufacturing method includes: supplying a processing solution to the rotating semiconductor substrate to process the semiconductor substrate; recovering the processing liquid scattered from the semiconductor substrate into the recovery tank through the recovery pipe; supplying a rinse liquid to the rotating semiconductor substrate after the processing liquid has been supplied to the semiconductor substrate; prohibiting an inflow of the rinsing liquid into the recovery pipe during a first period in which the rinsing liquid is supplied to the semiconductor substrate; discharging the rinse liquid through the discharge pipe during the first period; during a second period that is a period before the first period, the second guard receives the rinse liquid scattered from the semiconductor substrate and supplies the rinse liquid to the recovery pipe; Including, During a part or the whole of the first period, the flow path of the recovery pipe is open, In the step of inhibiting the inflow of the rinse liquid, the first guard receives the rinsing liquid scattered from the semiconductor substrate during the first period and supplies the rinsing liquid to the discharge pipe; During a part or the whole of the second period, the flow path of the recovery pipe is open, the second guard receives the processing liquid scattered from the semiconductor substrate during a processing period in which the semiconductor substrate is processed with the processing liquid and during a shaking-off period in which the processing liquid is shaken off from the semiconductor substrate after the processing period and before the second period, and guides the processing liquid to the recovery pipe; The treatment liquid includes a phosphoric acid liquid, A semiconductor manufacturing method, wherein a rotation speed of the semiconductor substrate during the shake-off period is higher than a rotation speed of the semiconductor substrate during the processing period and a rotation speed of the semiconductor substrate during the second period.

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