Flow adjustment valve, pump unit, and surface treatment apparatus

Abstract

In order to adjust the flow of a fluid with high precision, a flow adjustment valve (150) is provided with: a flow path (151) that has an opening (152) formed at one end thereof, and through which the fluid flows; a rising / lowering valve (153) that is capable of covering the entirety of the opening (152) so as to close the opening (152), capable of opening the opening (152) by separating from the opening (152) in the opening direction of the opening (152), and capable of changing the flow area (DA) with respect to the opening (152) by changing the distance (d) from the opening (152) in the opening direction; and a servo actuator (160) that is a driving means for moving the rising / lowering valve (153) in the opening direction on the basis of a predetermined detection value.

Description

Technical Field

[0001] The present invention relates to a flow control valve, a pump unit, and a surface treatment apparatus for adjusting the flow rate of a fluid.

Background Art

[0002] Among conventional surface treatment apparatuses, there are those that perform cleaning, modification, formation of a thin metal catalyst layer, surface treatment such as functional groups, and sputtering using a sputtering apparatus on a material to be treated. For example, in the plasma generation apparatus described in Patent Document 1, a plasma generation apparatus and a sputtering apparatus are arranged in one chamber, and the material to be treated is moved in the chamber for each process, or the plasma generation apparatus and the sputtering apparatus are arranged in different chambers, respectively, and the material to be treated is moved between the chambers for each process.

[0003] A surface treatment apparatus such as the plasma generation apparatus described in Patent Document 1 has a vacuum pump such as a turbo molecular pump because surface treatment is performed in a vacuum atmosphere, and a flow control valve for adjusting the flow rate of a fluid is arranged between the vacuum treatment chamber for performing surface treatment and the vacuum pump. A conventional flow control valve arranged between the vacuum treatment chamber and the vacuum pump can adjust the pressure in the vacuum treatment chamber by adjusting the opening area of the passage between the vacuum treatment chamber and the vacuum pump.

[0004] For example, in the semiconductor manufacturing apparatus described in Patent Document 2, a butterfly valve is disposed between a vacuum processing chamber and a turbo molecular pump. This butterfly valve rotates a disk used as a valve in the flow path between the vacuum processing chamber and the turbo molecular pump around a support axis orthogonal to the axial direction of the flow path, thereby enabling adjustment of the flow rate of the fluid flowing from the vacuum processing chamber to the turbo molecular pump. Further, in the vacuum valve described in Patent Document 3, a valve plate capable of adjusting the opening area of the flow path between the vacuum chamber and the turbo molecular pump is disposed between the vacuum chamber and the turbo molecular pump. In this vacuum valve, by moving the valve plate in a direction intersecting the direction of the flow path between the vacuum chamber and the turbo molecular pump, the flow rate of the fluid flowing from the vacuum chamber to the turbo molecular pump can be adjusted.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, when adjusting the opening area of the flow path by rotating a disk used as a valve in the flow path like a butterfly valve or moving a valve plate in a direction intersecting the direction of the flow path, since the change amount of the opening area is not proportional to the operation amount of the valve, it is difficult to adjust the opening area with high accuracy. In this case, there is also a risk that it is difficult to adjust the flow rate of the fluid flowing through the flow path with high accuracy, and there is room for improvement from the viewpoint of accuracy when adjusting the flow rate.

[0007] The present invention has been made in view of the above, and an object thereof is to provide a flow rate adjustment valve, a pump unit, and a surface treatment apparatus capable of adjusting the flow rate of a fluid with high accuracy.

Means for Solving the Problems

[0008] In order to solve the above-described problems and achieve the object, the flow rate adjustment valve according to the present invention includes a flow path portion having an opening formed at one end through which a fluid flows, and a lifting valve that can cover the entire area of the opening to close the opening, and can open the opening by separating from the opening in the opening direction of the opening, and can change the flow area with respect to the opening by changing the distance from the opening in the opening direction. The lifting valve is provided with a drive means for moving the lifting valve in the opening direction based on a predetermined detection value.

[0009] Further, in order to solve the above-described problems and achieve the object, the pump unit according to the present invention includes a flow path portion having an opening formed at one end through which a fluid flows, and a lifting valve that can cover the entire area of the opening to close the opening, and can open the opening by separating from the opening in the opening direction of the opening, and can change the flow area with respect to the opening by changing the distance from the opening in the opening direction. The lifting valve is provided with a drive means for moving the lifting valve in the opening direction based on a predetermined detection value. The pump unit further includes a pump disposed on the opposite side of the end portion of the flow path portion where the opening is formed, and the pump sucks the fluid flowing through the flow path portion.

[0010] Also, in order to solve the above-described problems and achieve the object, a surface treatment apparatus according to the present invention includes a flow path portion having an opening formed at one end through which a fluid flows, a lifting valve that can cover the entire area of the opening to close the opening, and can open the opening by separating from the opening in the opening direction of the opening, and can change the flow area with respect to the opening by changing the distance from the opening in the opening direction, a driving means for moving the lifting valve in the opening direction based on a predetermined detection value, a flow rate adjustment valve including the driving means, a pump disposed on the opposite side of the end of the flow path portion where the opening is formed, for sucking the fluid flowing through the flow path portion, and a chamber capable of accommodating a workpiece to be surface-treated therein. The opening opens to the chamber, the lifting valve is disposed in the chamber, and the driving means moves the lifting valve based on the pressure in the chamber.

Effects of the Invention

[0011] The flow rate adjustment valve, pump unit, and surface treatment apparatus according to the present invention have an effect that the flow rate of the fluid can be adjusted with high accuracy.

Brief Description of the Drawings

[0012]

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Embodiments for Carrying Out the Invention

[0013] Hereinafter, embodiments of the flow rate adjustment valve, the pump unit, and the surface treatment apparatus according to the present disclosure will be described in detail with reference to the drawings. Note that the present invention is not limited by this embodiment. In addition, the components in the following embodiments include those that can be replaced by those skilled in the art and can be easily conceived, or those that are substantially the same.

[0014] [Embodiment] FIG. 1 is a schematic diagram showing the device configuration of the surface treatment apparatus 1 according to the embodiment. FIG. 2 is a schematic cross-sectional view taken along the line A-A of FIG. 1. In the following description, the vertical direction in the normal use state of the surface treatment apparatus 1 will be described as the vertical direction Z in the surface treatment apparatus 1, the upper side in the normal use state of the surface treatment apparatus 1 will be described as the upper side in the surface treatment apparatus 1, and the lower side in the normal use state of the surface treatment apparatus 1 will be described as the lower side in the surface treatment apparatus 1. Also, the horizontal direction in the normal use state of the surface treatment apparatus 1 will be described as the horizontal direction in the surface treatment apparatus 1. Further, among the horizontal directions, the extending direction of the swing axis 111 of the housing unit support member 110 described later will be described as the length direction Y in the surface treatment apparatus 1, and the direction orthogonal to both the height direction and the length direction of the surface treatment apparatus 1 will be described as the width direction X in the surface treatment apparatus 1.

[0015] <Overall Configuration of the Surface Treatment Apparatus 1> The surface treatment apparatus 1 according to the present embodiment includes a chamber 10 formed to be capable of accommodating a workpiece W (see FIG. 21) therein, a plasma generation device 40 which is a first processing device for performing a surface treatment on the workpiece W, a sputtering device 70 which is a second processing device for performing a surface treatment different from that of the first processing device on the workpiece W, a housing unit 100 for housing the workpiece W, and a pump unit 140 for reducing the pressure in the chamber 10. Among these, the plasma generation device 40 can perform a surface treatment on the workpiece W by generating plasma, and the sputtering device 70 can perform a surface treatment on the workpiece W by performing sputtering. Also, the plasma generation device 40 and the sputtering device 70 can be switched in terms of the devices disposed inside the chamber 10.

[0016] Note that FIGS. 1 and 2 are schematic diagrams applicable to any of the plasma generation device 40 and the sputtering device 70 located in the chamber 10 to show the positional relationship in the chamber 10 when the plasma generation device 40 and the sputtering device 70 are located in the chamber 10. The chamber 10 is formed in a hollow substantially rectangular parallelepiped shape, and the plasma generation device 40 and the sputtering device 70 are attached to the upper wall 12 which is the upper wall surface and are arranged in the chamber 10. Further, in the chamber 10, a gas inflow portion 16 for allowing a gas used when performing sputtering by the sputtering device 70 to flow into the chamber 10 is arranged on the side wall 13 of the chamber 10. The gas inflow portion 16 is connected to a path of a gas used when performing sputtering by the sputtering device 70, for example, argon, nitrogen, oxygen, etc., and it is possible to allow these gases to flow into the chamber 10.

[0017] Further, the accommodation unit 100 is supported by the accommodation unit support member 110 and is installed inside the chamber 10, whereby the chamber 10 can accommodate the workpiece W therein. The accommodation unit support member 110 is connected to and supported by a support wall 14 which is a set of opposing side walls 13 among the plurality of side walls 13 constituting the chamber 10.

[0018] The accommodation unit 100 supported by the accommodation unit support member 110 is supported by the support wall 14 via the accommodation unit support member 110. The accommodation unit support member 110 is capable of swinging about a swing shaft 111 extending horizontally toward both of the opposing support walls 14. That is, a servo motor 120, which is a swinging means for swinging the accommodation unit 100, is attached to the chamber 10, and the accommodation unit support member 110 can swing by a driving force transmitted from the servo motor 120. The accommodation unit 100 supported by the accommodation unit support member 110 can swing integrally with the accommodation unit support member 110 about the swing shaft 111 when the accommodation unit support member 110 swings.

[0019] Also, the pump unit 140 is attached to the bottom 15 of the chamber 10, and more specifically, is disposed near the center of the bottom 15 of the chamber 10 in each of the length direction Y and the width direction X. Thereby, the pump unit 140 is disposed directly below the accommodation unit 100 provided inside the chamber 10. The pump unit 140 disposed at the bottom 15 of the chamber 10 in this way can decompress the pressure inside the chamber 10 by sucking the fluid inside the chamber 10, that is, the gas inside the chamber 10.

[0020] The pump unit 140 according to the present embodiment includes a flow rate adjustment valve 150, which is a valve unit for adjusting the flow rate of the fluid, and a turbo molecular pump 170, which is a pump for sucking the fluid. By adjusting the flow rate of the fluid sucked by the turbo molecular pump 170 with the flow rate adjustment valve 150, the pressure inside the chamber 10 can be decompressed to a desired pressure.

[0021] Among these, the flow rate adjustment valve 150 includes a lifting valve 153 disposed in the chamber 10 and a servo actuator 160 which is a driving means for moving the lifting valve 153 vertically in the Z direction within the chamber 10. By moving vertically in the Z direction within the chamber 10, the lifting valve 153 can adjust the flow rate of the fluid sucked by the turbo molecular pump 170.

[0022] Also, the flow rate adjustment valve 150 includes a lifting shaft 162 to which the lifting valve 153 is connected, and a worm jack 161 which transmits the power generated by the servo actuator 160 to the lifting shaft 162 and moves the lifting shaft 162 vertically in the Z direction. Further, a vacuum gauge 180 is attached to the chamber 10, and the pressure within the chamber 10 can be detected by the vacuum gauge 180. The servo actuator 160 operates based on the detection value detected by the vacuum gauge 180, thereby moving the lifting valve 153 vertically in the Z direction based on the detection value detected by the vacuum gauge 180, and making it possible to adjust the flow rate of the fluid sucked by the turbo molecular pump 170.

[0023] <Switching Structure between Plasma Generation Device 40 and Sputtering Device 70> FIG. 3 and FIG. 4 are explanatory diagrams regarding the switching between the plasma generation device 40 and the sputtering device 70 positioned within the chamber 10. FIG. 3 is an explanatory diagram showing the state where the plasma generation device 40 is positioned within the chamber 10. FIG. 4 is an explanatory diagram showing the state where the sputtering device 70 is positioned within the chamber 10. The chamber 10 has an opening 11 at the upper part, and the plasma generation device 40 and the sputtering device 70 can be switched to be positioned within the chamber 10 by entering into the chamber 10 from the opening 11 respectively. Specifically, the plasma generation device 40 is disposed on a first opening / closing member 20 which is attached to the chamber 10 so as to be able to open and close the opening 11, and the sputtering device 70 is disposed on a second opening / closing member 30 which is attached to the chamber 10 so as to be able to open and close the opening 11.

[0024] Both the first opening / closing member 20 and the second opening / closing member 30 are substantially rectangular in shape when viewed in plan, and have the same shape as the outer periphery formed by the plurality of side walls 13 when the chamber 10 is projected in the vertical direction Z. For this reason, the first opening / closing member 20 and the second opening / closing member 30 are shaped to be able to cover the opening 11 of the chamber 10. That is, the first opening / closing member 20 and the second opening / closing member 30 can close the opening 11 by covering the opening 11 of the chamber 10. Further, the first opening / closing member 20 and the second opening / closing member 30 are rotatably attached to the chamber 10, and thereby, the first opening / closing member 20 and the second opening / closing member 30 open and close the opening 11 by rotating with respect to the chamber 10.

[0025] Specifically, one side of the rectangle of the first opening / closing member 20 and one side wall 13 of the chamber 10 are connected by a hinge portion 21. The hinge portion 21 rotatably connects the first opening / closing member 20 to the chamber 10 about a rotation axis extending in the horizontal direction. The first opening / closing member 20 can be switched between a position where it covers the opening 11 of the chamber 10 to close the opening 11 and a position where it jumps upward above the opening 11 to open the opening 11 by rotating about the hinge portion 21. The plasma generation device 40 is attached to the first opening / closing member 20 so as to penetrate the first opening / closing member 20 in the thickness direction thereof. Further, the plasma generation device 40 is attached to the first opening / closing member 20 in such a direction that the portion for generating plasma in the plasma generation device 40 is located inside the chamber 10 when the first opening / closing member 20, which is rotatably connected to the chamber 10, is closed.

[0026] The second opening / closing member 30 is connected by a hinge portion 31 to one side of a rectangle and a side wall 13 of the plurality of side walls 13 of the chamber 10 that faces the side wall 13 to which the first opening / closing member 20 is connected. The hinge portion 31 connects the second opening / closing member 30 to the chamber 10 rotatably about a rotation axis extending in the horizontal direction. By rotating about the hinge portion 31, the second opening / closing member 30 can be switched between a position where it covers the opening 11 of the chamber 10 to close the opening 11 and a position where it jumps above the opening 11 to open the opening 11. The sputtering device 70 is attached to the second opening / closing member 30 so as to penetrate the second opening / closing member 30 in the thickness direction of the second opening / closing member 30. Further, when the second opening / closing member 30 that is rotatably connected to the chamber 10 is closed, the sputtering device 70 is attached to the second opening / closing member 30 in such a direction that the portion where sputtering is performed in the sputtering device 70 is located inside the chamber 10.

[0027] When closing the opening 11 of the chamber 10, one of the first opening / closing member 20 and the second opening / closing member 30 is closed and the other is open. That is, the first opening / closing member 20 and the second opening / closing member 30 can close the opening 11 of the chamber 10 when the other does not close the opening 11. For this reason, the first opening / closing member 20 can position the portion that generates plasma in the plasma generation device 40 inside the chamber 10 by closing the opening 11 when the second opening / closing member 30 does not close the opening 11 (see FIG. 3). Similarly, the second opening / closing member 30 can position the portion that performs sputtering in the sputtering device 70 inside the chamber 10 by closing the opening 11 when the first opening / closing member 20 does not close the opening 11 (see FIG. 4).

[0028] <Plasma generation device 40> FIG. 5 is a detailed view of the plasma generating device 40 shown in FIG. 3. FIG. 6 is a cross-sectional view taken along line B-B of FIG. 5. The plasma generating device 40 includes a gas supply pipe 41 that supplies a gas used when generating plasma, and a pair of plate-shaped conductor parts 51 and 52 that generate plasma from the gas supplied from the gas supply pipe 41 by a high-frequency voltage. Specifically, the gas supply pipe 41 penetrates the first opening / closing member 20 in the thickness direction of the first opening / closing member 20, and is attached to the first opening / closing member 20 by a gas supply pipe attachment member 45. Further, the gas supply pipe 41 has a gas flow path 42 formed therein that extends along the extending direction of the gas supply pipe 41, and it is possible to supply gas from the outside of the chamber 10 into the chamber 10. That is, at the end of the gas supply pipe 41 on the side located outside when the first opening / closing member 20 closes the opening 11 of the chamber 10, a gas supply part 44 that supplies the gas used when generating plasma to the gas supply pipe 41 is connected, and at a position closer to the other end of the gas supply pipe 41, a gas supply hole 43 that is a hole for introducing the gas that has flowed through the gas flow path 42 into the chamber 10 is formed. The gas supply part 44 is supplied with a plasma generation gas, which is a gas used for generating plasma, via a mass flow controller (MFC) 64 having a flow control function in a mass flow meter. As the plasma generation gas, for example, argon, a mixed gas of argon and oxygen, a single gas of oxygen or nitrogen, a mixed gas of oxygen or nitrogen and ammonia, etc. are used. Furthermore, helium, carbon dioxide, nitrous oxide, hydrogen, air, and their mixed gases may be used as the plasma generation gas.

[0029] Both of the pair of plate-shaped conductor parts 51 and 52 are formed in a flat plate shape, and are formed of a metal plate such as aluminum or other conductor plates. Note that the plate-shaped conductor parts 51 and 52 may have a dielectric film on their surfaces, and the surfaces on the plasma gas derivation side of the pair of plate-shaped conductor parts 51 and 52 may be configured to be covered with a dielectric film by alumina spraying or hard anodizing treatment in order to avoid arc discharge or the like, or the plate-shaped conductor parts 51 and 52 may be subjected to alumina spraying or hard anodizing treatment on both surfaces of each of the pair of plate-shaped conductor parts 51 and 52.

[0030] A pair of plate-shaped conductor parts 51 and 52 are supported by a support plate 50. The support plate 50 is formed of an insulating material such as glass or ceramic, for example. The support plate 50 is formed in a shape in which convex portions are formed over the entire circumference near the outer periphery on one side of the plate. In other words, the support plate 50 is formed in a thick plate shape in which a recess 50a recessed along the outer periphery of the support plate 50 is formed on one side.

[0031] The support plate 50 formed in this way is arranged such that the surface on the side where the recess 50a is not formed faces the first opening / closing member 20, and the surface on the side where the recess 50a is formed is located on the opposite side of the side where the first opening / closing member 20 is located, and is supported by a support member 46. The support member 46 has a cylindrical member and mounting members located at both ends of the cylindrical member. The mounting member on one end side is attached to the first opening / closing member 20, and the mounting member on the other end side is attached to the support plate 50. Thereby, the support plate 50 is supported by the support member 46 disposed between the support plate 50 and the first opening / closing member 20 and attached to both.

[0032] The gas supply pipe 41 passing through the first opening / closing member 20 extends through the inside of the cylindrical member in the support member 46 to the position of the support plate 50 and passes through the support plate 50. Thereby, the gas supply hole 43 formed in the gas supply pipe 41 is disposed in the portion of the support plate 50 where the recess 50a is formed.

[0033] The pair of plate-shaped conductor parts 51 and 52 are arranged to cover the recess 50a on the side of the support plate 50 where the recess 50a is formed. At this time, a spacer 55 is arranged near the outer periphery between the two, and they are overlapped via the spacer 55. In this way, parts other than the part where the spacer 55 is arranged in the pair of plate-shaped conductor parts 51 and 52 overlapped via the spacer 55 are separated from each other between the plate-shaped conductor part 51 and the plate-shaped conductor part 52, and are formed as a gap part 56. The interval between the pair of plate-shaped conductor parts 51 and 52 is preferably set appropriately according to the gas introduced and the frequency of the supplied power in the plasma generation device 40, and further the size of the electrode, etc. For example, it is about 3 mm to 12 mm.

[0034] The pair of plate-shaped conductor parts 51 and 52 are held by a holding member 58, which is a member for holding the plate-shaped conductor parts 51 and 52, in a state of being overlapped via the spacer 55. That is, the holding member 58 is arranged on the opposite side of the plate-shaped conductor parts 51 and 52 from the side where the support plate 50 is located, and is attached to the support plate 50 in a state of sandwiching the plate-shaped conductor parts 51 and 52 between the holding member 58 and the support plate 50. Thereby, the pair of plate-shaped conductor parts 51 and 52 overlapped via the spacer 55 are held by the holding member 58 in a state of being sandwiched between the holding member 58 and the support plate 50.

[0035] The pair of plate-shaped conductor parts 51 and 52 are arranged to cover the recess 50a in the support plate 50 in this way. In the state of being held by the holding member 58, the recess 50a of the support plate 50 forms a space with the plate-shaped conductor parts 51 and 52.

[0036] For example, when the plate-shaped conductor part 52 is arranged on the side of the support plate 50 and the plate-shaped conductor part 51 is arranged on the side of the holding member 58 among the pair of plate-shaped conductor parts 51 and 52 arranged one above the other, this space is partitioned by the concave part 50a of the support plate 50 and the plate-shaped conductor part 52. The space formed in this way is formed as a gas introduction part 57 into which the plasma generation gas supplied by the gas supply pipe 41 is introduced. The gas supply hole 43 of the gas supply pipe 41 is located in the gas introduction part 57 and opens into the gas introduction part 57. The gas introduction part 57 is partitioned by the support plate 50 and the plate-shaped conductor part 52 being closely attached.

[0037] In addition, a large number of through holes 53 and 54 penetrating in the thickness direction are formed in the pair of plate-shaped conductor parts 51 and 52, respectively. That is, in the plate-shaped conductor part 52 located on the inflow side of the plasma generation gas supplied by the gas supply pipe 41, a plurality of through holes 54 are formed at predetermined intervals in a matrix shape when viewed in the thickness direction of the plate-shaped conductor part 52, and in the plate-shaped conductor part 51 located on the outflow side of the plasma gas generated from the plasma generation gas, a plurality of through holes 53 are formed at predetermined intervals in a matrix shape when viewed in the thickness direction of the plate-shaped conductor part 51.

[0038] The through hole 53 of the plate-shaped conductor part 51 and the through hole 54 of the plate-shaped conductor part 52 are each a cylindrical hole, and both through holes 53 and 54 are arranged coaxially. That is, the center of the through hole 53 of the plate-shaped conductor part 51 and the center of the through hole 54 of the plate-shaped conductor part 52 are arranged aligned. Among these, the diameter of the through hole 53 of the plate-shaped conductor part 51 is smaller than that of the through hole 54 of the plate-shaped conductor part 52 on the gas inflow side. In this way, a plurality of through holes 53 and 54 are formed in the pair of plate-shaped conductor parts 51 and 52 to form a hollow electrode structure, and the plasma gas generated through these plurality of through holes 53 and 54 will flow at high density.

[0039] A gap portion 56 is interposed between the plate-like conductor portions 51 and 52 of the parallel plate type, and the gap portion 56 functions as a capacitor having capacitance. Specifically, the support plate 50 and the plate-like conductor portions 51 and 52 are provided with conductive portions (not shown) by conductive members. The support plate 50 is grounded 63 by the conductive portion, and the plate-like conductor portion 52 is also grounded 63. Further, one end of the high-frequency power supply (RF) 61 is grounded 63, and the other end of the high-frequency power supply 61 is electrically connected to the plate-like conductor portion 51 via a matching box (MB) 60 for adjusting capacitance and the like to obtain consistency with the plasma. Therefore, when the high-frequency power supply 61 is operated, the potential of the plate-like conductor portion 51 swings between plus and minus at a predetermined frequency such as 13.56 MHz, for example.

[0040] <Sputtering apparatus 70> FIG. 7 is a detailed view of the sputtering apparatus 70 shown in FIG. 4. FIG. 8 is a cross-sectional view taken along the line C-C of FIG. 7. The sputtering apparatus 70 includes a cooling water pipe 71 through which cooling water flows, a magnet 81 that generates a magnetic field, a target 84 on which gas flowing in from the gas inflow portion 16 is ionized by the magnetic field generated by the magnet 81, and particles such as atoms used for film formation are ejected by the collision of the ions, a cooling jacket 82 that cools the target 84, and a support plate 80 that supports the magnet 81, the target 84, and the cooling jacket 82. In the present embodiment, copper is used for the target 84. Further, the cooling water pipe 71 penetrates the second opening / closing member 30 in the thickness direction of the second opening / closing member 30, and is attached to the second opening / closing member 30 by a cooling water pipe attachment member 75.

[0041] Furthermore, a cooling water passage 72 extending along the extending direction of the cooling water pipe 71 is formed inside the cooling water pipe 71, and it is possible to circulate cooling water between the outside of the chamber 10 and the cooling jacket 82 disposed inside the chamber 10. That is, the end portion of the cooling water pipe 71 located on the side outside when the second opening / closing member 30 closes the opening 11 of the chamber 10 is connected to a water inlet 73 which is an inlet of the cooling water and a water outlet 74 which is an outlet of the cooling water. For this reason, as the cooling water passage 72 formed inside the cooling water pipe 71, a cooling water passage 72 connected to the water inlet 73 and a cooling water passage 72 connected to the water outlet 74 are provided. On the other hand, the end portion of the cooling water pipe 71 located on the side inside the chamber 10 when the second opening / closing member 30 closes the opening 11 of the chamber 10 is connected to the cooling jacket 82. The cooling jacket 82 has a flow path for cooling water formed inside, and it is possible for the cooling water to flow therethrough. Thereby, it is possible to circulate the cooling water between the outside of the chamber 10 and the cooling jacket 82.

[0042] The support plate 80 can support the magnet 81, the cooling jacket 82, and the target 84 in a stacked state. Specifically, the support plate 80, the magnet 81, the cooling jacket 82, and the target 84 are all formed in a plate shape, and the support plate 80 is formed in a shape that is larger in shape in plan view than the magnet 81, the cooling jacket 82, and the target 84. For this reason, the magnet 81, the cooling jacket 82, and the target 84 are supported by the support plate 80 and the holding member 85 in a state where they are stacked in the order of the magnet 81, the cooling jacket 82, and the target 84 from the support plate 80 side, and the outer periphery of the surface of the target 84 opposite to the surface on the cooling jacket 82 side is supported by the holding member 85. Further, the magnet 81, the cooling jacket 82, and the target 84 held by the holding member 85 are held in a state where their outer peripheral portions are also surrounded by the holding member 85.

[0043] At that time, an insulating material 83 is disposed between the support plate 80 and the magnet 81, and the insulating material 83 is also disposed at the outer peripheral portion of the magnet 81 in a plan view. That is, the insulating material 83 is disposed between the support plate 80 and the magnet 81 and between the magnet 81 and the holding member 85. For this reason, the magnet 81 is held by the support plate 80 and the holding member 85 via the insulating material 83.

[0044] The support plate 80 is located on the side opposite to the side where the second opening / closing member 30 is located, with the surface on the side holding the magnet 81 etc., and the surface on the side opposite to the side holding the magnet 81 etc. is arranged in a direction facing the second opening / closing member 30 and is supported by the support member 76. The support member 76 has a cylindrical member and mounting members located at both ends of the cylindrical member. The mounting member on one end side is attached to the second opening / closing member 30, and the mounting member on the other end side is attached to the support plate 80. At that time, the support plate 80 is attached at a position near the central portion when the support plate 80 is viewed in the thickness direction. Thereby, the support plate 80 is supported by the support member 76 that is disposed between the support plate 80 and the second opening / closing member 30 and is attached to both of them.

[0045] Note that the cooling water pipe 71, one end of which is connected to the cooling jacket 82, penetrates the support plate 80, the magnet 81, and the insulating material 83 from the side opposite to the surface of the support plate 80 on the side holding the magnet 81 etc. at a position different from the position where the support member 76 is disposed. Thereby, the cooling water pipe 71 is connected to the cooling jacket 82.

[0046] <Housing unit support member 110> FIG. 9 and FIG. 10 are explanatory views of the housing unit 100, the housing unit support member 110, and the correction plate 130 shown in FIG. 1. FIG. 9 is an explanatory view of the state where the plasma generation device 40 is located in the chamber 10, and FIG. 10 is an explanatory view of the state where the sputtering device 70 is located in the chamber 10. FIG. 11 is a cross-sectional view taken along line D-D of FIG. 9. FIG. 12 is a cross-sectional view taken along line E-E of FIG. 10. The housing unit support member 110 is supported by being connected to a support wall 14, which is a set of opposing side walls 13 of the plurality of side walls 13 that the chamber 10 has, by a swing shaft 111, and can swing by a driving force transmitted from a servo motor 120, which is a swinging means. Specifically, the housing unit support member 110 includes a pair of side plates 112 that are spaced apart in the length direction Y inside the chamber 10 and arranged in a direction parallel to the support wall 14, and a mounting member 113 that extends in the length direction Y and is arranged between the pair of side plates 112. Each side plate 112 is formed in a substantially semicircular plate shape, and is arranged such that the flat portion of the semicircle is located closer to the opening 11 of the chamber 10, and the arcuate side portion of the semicircle is located closer to the bottom 15 of the chamber 10.

[0047] Also, the distance between the side plates 112 in the length direction Y is larger than the sizes of the plasma generation device 40 and the sputtering device 70 in the same direction in the state where the plasma generation device 40 and the sputtering device 70 are located in the chamber 10. Specifically, the side plates 112 are arranged at positions and with sizes such that the positions of the side plates 112 in the vertical direction Z inside the chamber 10 can include the positions in the vertical direction Z of the ends on the bottom 15 side of the chamber 10 of the plasma generation device 40 and the sputtering device 70 in the state where the plasma generation device 40 and the sputtering device 70 are located in the chamber 10.

[0048] In addition, the length of the semi-circular flat portion of the side plate 112 is larger than the widths of the plasma generation device 40 and the sputtering device 70 in the width direction X. In other words, the total width of the side plate 112 in the width direction X is larger than the total widths of the plasma generation device 40 and the sputtering device 70 in the width direction X within the range where the positions in the vertical direction Z overlap between the plasma generation device 40 and the sputtering device 70 and the side plate 112. Further, since the side plate 112 is formed in a substantially semi-circular shape and the arc-side portion is arranged in a direction positioned closer to the bottom 15 of the chamber 10, the width of the side plate 112 in the width direction X decreases from the upper side toward the lower side.

[0049] The swing shaft 111 is provided together with a pair of side plates 112 in a direction in which the axis is parallel to the length direction Y, and different swing shafts 111 are connected to the side plates 112 respectively. Among the swing shafts 111, the swing shaft 111 on the side where the servo motor 120 for swinging the housing unit 100 is located is connected to the output shaft 121 of the servo motor 120, and a drive shaft 125 that rotates integrally with the output shaft 121 is used as the swing shaft 111. That is, the servo motor 120 is attached to one of the pair of support walls 14. The servo motor 120 is attached to the outer surface of the support wall 14 outside the chamber 10 by a servo motor attachment member 122, and the output shaft 121 that generates and outputs a driving force by the servo motor 120 extends from the support wall 14 into the chamber 10 through the support wall 14. The drive shaft 125 is disposed in the chamber 10 and is in a state where relative rotation with respect to the output shaft 121 of the servo motor 120 is impossible, that is, in a state where it can rotate integrally with respect to the output shaft 121, and is connected to the output shaft 121. Further, the end portion of the drive shaft 125 on the side opposite to the end portion on the side connected to the output shaft 121 of the servo motor 120 is connected to the side plate 112 by a swing means shaft connection portion 114. Thereby, the drive shaft 125 is used as the swing shaft 111, and the driving force generated by the servo motor 120 is transmitted from the output shaft 121 of the servo motor 120 to the drive shaft 125 and can be transmitted from the drive shaft 125 to the side plate 112 of the housing unit support member 110.

[0050] Of the swing shafts 111, the swing shaft 111 located on the side opposite to the side where the servo motor 120 is located uses a support shaft 116. One end of the support shaft 116 is supported by a support shaft support member 117, and the other end is connected to a side plate 112 by a support shaft connecting portion 115. Near the end of the support shaft 116 on the side supported by the support shaft support member 117, it penetrates through the support wall 14 and is supported in a non-rotatable state by the support shaft support member 117 from the outer surface of the support wall 14 outside the chamber 10. Near the end of the support shaft 116 on the side connected to the support shaft connecting portion 115, it is supported by the support shaft connecting portion 115 attached to the side plate 112, and the support shaft connecting portion 115 and the support shaft 116 can rotate relative to each other around the axis of the support shaft 116.

[0051] The side plate 112 on the side to which the drive shaft 125 is connected and the side plate 112 on the side to which the support shaft 116 is connected are connected by a mounting member 113 disposed between the two side plates 112. The mounting member 113 is composed of a rod-shaped member extending along the length direction Y, and both ends are attached to different side plates 112 respectively. Also, a plurality of mounting members 113 are arranged, and the plurality of mounting members 113 are arranged near the outer periphery of the arc-shaped portion of the side plate 112 formed in a substantially semicircular shape. Thereby, the pair of side plates 112 are connected to each other by the plurality of mounting members 113. For this reason, when the side plate 112 on the side to which the drive shaft 125 is connected swings due to the driving force transmitted from the servo motor 120, the force in the swinging direction is also transmitted to the other side plate 112, and the pair of side plates 112 can swing integrally.

[0052] <Accommodation unit 100> The accommodation unit support member 110 formed in this way is capable of supporting the accommodation unit 100. FIG. 13 is a perspective schematic view of the accommodation unit 100 shown in FIG. 9. The accommodation unit 100 is formed in a cage-like shape by the workpiece holding wall 101 and the side walls 102. Among these, the side wall 102 is a plate-like member that is arranged parallel to the side plate 112 in the vicinity of the side plate 112 of the accommodation unit support member 110 in a state where the accommodation unit 100 is supported by the accommodation unit support member 110, and a pair of side walls 102 are arranged in the same way as the pair of side plates 112. The interval between the pair of side walls 102 is slightly narrower than the interval between the pair of side plates 112.

[0053] Further, in a state where the side wall 102 is supported by the accommodation unit support member 110, the width in the width direction X becomes smaller from the opening 11 side to the bottom 15 side of the chamber 10, similar to the side plate 112 of the accommodation unit support member 110. In the present embodiment, the side wall 102 is formed in a substantially trapezoidal shape, and the longer side of the upper base and the lower base of the trapezoid is located on the upper side in a state where it is supported by the accommodation unit support member 110, and the shorter side is located on the lower side. Thereby, the width of the side wall 102 in the width direction X becomes smaller from the upper side to the lower side.

[0054] Furthermore, the side wall 102 has a portion of the upper base and the lower base of the trapezoid that is located on the upper side and has a longer length extended upward. That is, the side wall 102 is formed in a substantially pentagonal shape in which a rectangle of the same length as the longer side of the upper base and the lower base of the trapezoid is added when viewed in the length direction Y. Thereby, the width of the side wall 102 in the width direction X becomes smaller from the upper side to the lower side.

[0055] The workpiece holding wall 101 is disposed between a pair of side walls 102 and is formed along the sides of the outer periphery of the side wall 102 other than the upper pentagonal side. As a result, in the state where the housing unit 100 is supported by the housing unit support member 110, only the portion on the opening 11 side of the chamber 10 is open, and this portion serves as the opening 103 of the housing unit 100. The housing unit 100 is formed in a cage-like shape by forming the opening 103 in this manner, and the workpiece W to be processed accommodated in the housing unit 100 can be taken in and out through the opening 103. Further, the opening 103 of the housing unit 100 is sized such that the support plate 50 of the plasma generation device 40 and the support plate 80 of the sputtering device 70 can enter when the plasma generation device 40 and the sputtering device 70 are disposed in the chamber 10.

[0056] In addition, the workpiece holding wall 101 of the housing unit 100 is formed of a plate-like member having a large number of holes, such as a punching plate. Since the housing unit 100 is formed of a member having a large number of holes in the workpiece holding wall 101, the housing unit 100 has air permeability between the inside and the outside thereof through the workpiece holding wall 101.

[0057] On the outer surface side of the workpiece holding wall 101 in the housing unit 100, there is an attachment plate 104 used when the housing unit 100 is supported by the housing unit support member 110. The attachment plates 104 are arranged on the outer surface side of the workpiece holding wall 101 in a direction in which the thickness direction is the same as the thickness direction of the side wall 102, and a plurality of them are arranged. In this embodiment, the attachment plates 104 are arranged at two positions between the pair of side walls 102. In the attachment plate 104, when viewed in the length direction Y, a notch (not shown) through which the attachment member 113 of the housing unit support member 110 passes is formed at the position where the attachment member 113 of the housing unit support member 110 is arranged. Therefore, when the housing unit 100 is supported by the housing unit support member 110, the attachment member 113 of the housing unit support member 110 can be inserted into the notch formed in the attachment plate 104 of the housing unit 100. Thereby, the housing unit 100 can be supported by the housing unit support member 110 in a state where relative movement of the housing unit 100 with respect to the housing unit support member 110 in the direction in which the housing unit support member 110 swings can be restricted.

[0058] <Correction plate 130> Further, the surface treatment apparatus 1 has a correction plate 130 that is disposed on at least one of the housing unit 100, the plasma generation apparatus 40, and the sputtering apparatus 70 and restricts the range in which the workpiece W is disposed. In this embodiment, as the correction plate 130, a device-side correction plate 131 attached to the plasma generation apparatus 40 and the sputtering apparatus 70 is provided. Among these, the device-side correction plate 131 attached to the plasma generation apparatus 40 is in a direction parallel to the side wall 102 of the housing unit 100 when the plasma generation apparatus 40 is located in the chamber 10 in which the housing unit 100 is disposed, and a pair of device-side correction plates 131 are disposed between the pair of side walls 102. That is, the pair of device-side correction plates 131 are disposed facing each other.

[0059] The pair of device-side correction plates 131 each have a mounting portion 132, and the mounting portion 132 of the device-side correction plate 131 attached to the plasma generation device 40 is attached to the lower surface of the holding member 58 of the plasma generation device 40. That is, the mounting portion 132 is located at the upper end of the device-side correction plate 131 when viewed in the width direction X of the device-side correction plate 131, and the mounting portion 132 is formed in a plate shape with the thickness direction being the vertical direction Z. The device-side correction plate 131 is attached to the lower surface of the plasma generation device 40 by attaching the thus-formed mounting portion 132 to the lower surface of the holding member 58 of the plasma generation device 40. Further, by attaching the device-side correction plate 131 to the holding member 58 of the plasma generation device 40, the distance between the device-side correction plates 131 is approximately the same as the width of the support plate 50 of the plasma generation device 40 in the length direction Y. Specifically, the distance between the pair of device-side correction plates 131 attached to the plasma generation device 40 is approximately the same as the width of the gas introduction portion 57 of the plasma generation device 40 in the length direction Y.

[0060] Further, the width of the device-side correction plate 131 in the width direction X attached to the plasma generation device 40 is approximately the same as the width of the support plate 50 of the plasma generation device 40 in the same direction. Also, the height of the device-side correction plate 131 in the vertical direction Z is such that when the plasma generation device 40 is positioned in the chamber 10 where the housing unit 100 is supported by the housing unit support member 110, the device-side correction plate 131 can be separated from the housing unit 100 in the vertical direction Z.

[0061] Similarly, the device-side correction plate 131 attached to the sputtering apparatus 70 is attached to the lower surface of the sputtering apparatus 70 by attaching the attachment portion 132 to the lower surface of the holding member 85 of the sputtering apparatus 70. The interval between the device-side correction plates 131 attached to the sputtering apparatus 70 is approximately the same as the width of the support plate 80 of the sputtering apparatus 70 in the length direction Y. Specifically, the interval between a pair of device-side correction plates 131 attached to the sputtering apparatus 70 is approximately the same as the width of the magnet 81 of the sputtering apparatus 70 in the length direction Y.

[0062] In addition, the width of the device-side correction plate 131 attached to the sputtering apparatus 70 in the width direction X is approximately the same as the width of the support plate 80 of the sputtering apparatus 70 in the same direction. Further, the height of the device-side correction plate 131 in the vertical direction Z is such that when the sputtering apparatus 70 is positioned in the chamber 10 where the housing unit 100 is supported by the housing unit support member 110, the device-side correction plate 131 can be separated from the housing unit 100 in the vertical direction Z.

[0063] FIG. 14 is an explanatory view showing a state in which the housing unit 100 and the housing unit support member 110 shown in FIG. 11 are swung. FIG. 15 is an explanatory view showing a state in which the housing unit 100 and the housing unit support member 110 shown in FIG. 12 are swung. The device-side correction plate 131 attached to the plasma generation device 40 and the device-side correction plate 131 attached to the sputtering apparatus 70 have substantially the same shape, and their arrangement positions in the chamber 10 when located in the chamber 10 are substantially the same. Further, the device-side correction plate 131 is chamfered between the two sides and the lower side in the width direction X so as not to contact the housing unit 100 when the housing unit 100 swings integrally with the housing unit support member 110 about the swing axis 111.

[0064] In the surface treatment apparatus 1 according to the present embodiment, when the housing unit support member 110 swings about the swing axis 111, the swing angle is approximately 50° on each of both sides in the swing direction from the position where the housing unit support member 110 is neutral, and the total swing angle is approximately 100°. The position where the housing unit support member 110 is neutral here refers to the position where the opening 103 of the housing unit 100 faces directly upward when the housing unit 100 is attached to the housing unit support member 110.

[0065] <Pump unit 140> FIG. 16 is a detailed view of the pump unit 140 shown in FIG. 1. FIG. 17 is a detailed view of the lifting shaft 162 and the worm jack 161 as viewed from the F-F direction of FIG. 16. FIG. 18 is a schematic sectional view of FIG. 16. FIG. 19 is a view taken in the direction of the arrow K-K of FIG. 18. FIG. 20 is an explanatory view showing a state in which the lifting valve 153 shown in FIG. 18 opens the opening 152. In FIGS. 18 and 20, for the turbo molecular pump 170, a part of its internal structure is shown, and the other parts are shown in outline. The pump unit 140 attached to the bottom 15 of the chamber 10 has a flow rate adjustment valve 150 and a turbo molecular pump 170. The flow rate adjustment valve 150 according to the present embodiment has a flow path portion 151 through which a fluid flows, a lifting valve 153 that opens and closes an opening 152 formed at one end of the flow path portion 151, and a servo actuator 160 that is a driving means for causing the lifting valve 153 to perform an opening and closing operation. Further, the turbo molecular pump 170 is a pump that sucks the fluid flowing through the flow path portion 151 of the flow rate adjustment valve 150.

[0066] Specifically, the flow path portion 151 of the flow rate adjustment valve 150 is formed in the mounting flange 141 for mounting the pump unit 140 to the chamber 10. The turbo molecular pump 170 is mounted to the mounting flange 141 by mounting the pump flange 171 of the turbo molecular pump 170 to the mounting flange 141. The mounting flange 141 is a plate-like member, and the flow path portion 151 is formed as a hole penetrating in the thickness direction of the mounting flange 141. The opening 152 of the flow path portion 151 is located at one end side of the flow path portion 151 penetrating the mounting flange 141 in this way, and the turbo molecular pump 170 is mounted to the surface of the mounting flange 141 on the opposite side of the surface where the opening 152 of the flow path portion 151 is located. Thereby, the turbo molecular pump 170 is disposed on the opposite side of the end portion on the side where the opening 152 is formed in the flow path portion 151.

[0067] The pump unit 140 is mounted to the chamber 10 by mounting the mounting flange 141 to the lower surface of the bottom 15 of the chamber 10. The mounting flange 141 is mounted in such a direction that the surface on which the opening 152 of the flow path portion 151 is located faces the chamber 10 side, and the surface on which the turbo molecular pump 170 is mounted faces the opposite side of the chamber 10. Thereby, the mounting flange 141 is mounted in such a direction that the flow direction when fluid flows through the flow path portion 151 is the vertical direction Z, and the opening 152 is located at the upper end of the flow path portion 151. In other words, the flow path portion 151 is arranged in such a direction that the opening direction of the opening 152 is the vertical direction Z. In a state where the mounting flange 141 is mounted to the bottom 15 of the chamber 10, the opening 152 of the flow path portion 151 opens into the chamber 10, and the flow path portion 151 communicates with the chamber 10.

[0068] The turbo molecular pump 170 attached to the mounting flange 141 has a casing 173 which is a housing in the turbo molecular pump 170, and an impeller 176 that rotates about the rotation axis PC. Among these, the casing 173 is formed in a substantially cylindrical shape, and the pump flange 171 is disposed at one end in the axial direction of the cylinder having the shape of the casing 173. For this reason, when the turbo molecular pump 170 is attached to the chamber 10 via the mounting flange 141 with the pump flange 171 attached to the mounting flange 141, the turbo molecular pump 170 is attached in such a direction that the axial direction of the cylindrical shape of the casing 173 becomes the vertical direction Z.

[0069] The impeller 176 of the turbo molecular pump 170 is rotatably disposed inside the casing 173 formed in a substantially cylindrical shape, and the rotation axis PC of the impeller 176 is disposed at a position and in a direction substantially coinciding with the central axis of the cylinder having the shape of the casing 173. In this way, the impeller 176 disposed inside the casing 173 can rotate about the rotation axis PC inside the casing 173 by the driving force supplied from driving means such as an electric motor (not shown) that the turbo molecular pump 170 has.

[0070] Also, the impeller 176 has a shaft 177 that rotates about the rotation axis PC, and a plurality of moving blades 178 that extend radially from the shaft 177 and rotate integrally with the shaft 177. When the plurality of moving blades 178 having the same position in the axial direction of the rotation axis PC are arranged radially in one stage, a plurality of stages are arranged at a predetermined interval in the axial direction of the rotation axis PC.

[0071] On one side, inside the casing 173, a plurality of stationary blades 174 are arranged between the stages of the moving blades 178 in the axial direction of the rotating shaft PC of the impeller 176. The stationary blades 174 are non-rotatable with respect to the casing 173 and are attached to the casing 173, and a plurality of them are arranged radially around the central axis of the cylinder, which is the shape of the casing 173. Also, similar to the moving blades 178 of the impeller 176, when the stationary blades 174 are grouped into a single stage with a plurality of stationary blades 174 arranged radially at the same position in the axial direction of the central axis of the casing 173, a plurality of stages are arranged at a predetermined interval in the axial direction.

[0072] Therefore, the moving blades 178 of the impeller 176 and the stationary blades 174 arranged in the casing 173 are alternately arranged in the axial direction of the rotating shaft PC of the impeller 176 or in the axial direction of the central axis of the casing 173. That is, the turbo molecular pump 170 is configured as a so-called axial flow pump. Thus, the turbo molecular pump 170 can suck the fluid flowing through the flow path portion 151 by the rotation of the impeller 176 around the rotating shaft PC of the impeller 176.

[0073] The lift valve 153 of the flow rate adjustment valve 150 is arranged in the chamber 10, on the side of the opening 152 of the flow path portion 151, that is, above the opening 152. The lift valve 153 can open and close the opening 152 by changing the distance d in the vertical direction Z from the opening 152. That is, when closing the opening 152, the lift valve 153 can close it by covering the entire area of the opening 152, and when opening the opening 152, it can open the opening 152 by separating from the opening 152 in the opening direction of the opening 152, that is, in the vertical direction Z. The shapes of these opening 152 and the lift valve 153 are both substantially circular when viewed in the opening direction of the opening 152, and the diameter of the lift valve 153 is larger than that of the opening 152. The so-called substantially circular in this case means that it is formed in a substantially circular shape regardless of dimensional errors during manufacturing or the presence of slight unevenness.

[0074] The rotation axis PC of the turbo molecular pump 170 attached to the chamber 10 via the mounting flange 141 substantially coincides with the substantially circular central axis VC having the shape of the lifting valve 153, as shown in FIGS. 18 and 19. In other words, the turbo molecular pump 170 and the lifting valve 153 disposed on both sides of the flow path portion 151 in the vertical direction Z are arranged in a positional relationship in which the rotation axis PC of the turbo molecular pump 170 and the central axis VC of the lifting valve 153 substantially coincide with each other.

[0075] The servo actuator 160 for opening and closing the lifting valve 153 can cause the lifting valve 153 to perform an opening / closing operation of the opening 152 by moving the lifting valve 153 in the opening direction of the opening 152, that is, in the vertical direction Z. The servo actuator 160 is disposed on the surface side of the mounting flange 141 where the turbo molecular pump 170 is attached, and is supported by the driving means support portion 143. That is, the servo actuator 160 is attached to the mounting flange 141 via the driving means support portion 143.

[0076] The driving force generated by the servo actuator 160 is transmitted to the lifting valve 153 via the worm jack 161, the lifting shaft 162, and the connecting member 163, and the lifting valve 153 can move in the vertical direction Z by the driving force transmitted through these, and can open and close the opening 152. Among these, the worm jack 161 can move the lifting shaft 162 in the axial direction of the lifting shaft 162 by the driving force transmitted from the servo actuator 160, and the lifting shaft 162 is arranged with the axial direction along the vertical direction Z. For this reason, when the driving force from the servo actuator 160 is transmitted from the worm jack 161, the lifting shaft 162 moves in the vertical direction by this driving force. The lifting shaft 162 penetrates the bottom portion 15 of the chamber 10 and the mounting flange 141, the upper end is located inside the chamber 10, and the lower end is located outside the chamber 10 and below the mounting flange 141.

[0077] Note that the portion where the lifting shaft 162 penetrates the mounting flange 141 is airtight, and fluid does not flow on both sides of the portion penetrating the mounting flange 141. Further, the lifting shaft 162 penetrates the bottom 15 of the chamber 10.

[0078] The worm jack 161 is connected to a position near the lower end of the lifting shaft 162, transmits the driving force transmitted from the servo actuator 160 to the lifting shaft 162 from a position near the lower end of the lifting shaft 162, and moves the lifting shaft 162 in the vertical direction Z.

[0079] The connecting member 163 is disposed within the chamber 10 and connects the upper end of the lifting shaft 162 and the lift valve 153. That is, the connecting member 163 is disposed across between the surface on the opposite side of the surface that opens and closes the opening 152 of the flow path portion 151 in the lift valve 153 and the upper end of the lifting shaft 162, and by being connected to both, the upper end of the lifting shaft 162 and the lift valve 153 are connected. Thereby, when the lifting shaft 162 moves in the vertical direction Z, the connecting member 163 also moves in the vertical direction Z together with the lifting shaft 162, and the lift valve 153 can also move in the vertical direction Z. The lift valve 153 can open and close the opening 152 of the flow path portion 151 by moving in the vertical direction Z by the driving force transmitted from the servo actuator 160 in this way.

[0080] The chamber 10 is provided with a valve guide 165 for guiding the opening and closing operation of the lift valve 153, and the lift valve 153 is attached with a guide engaging portion 166 that engages with the valve guide 165. The valve guide 165 is formed in a rod-like shape extending in the vertical direction Z, which is the direction in which the lift valve 153 moves when opening and closing, and is disposed near the portion of the inner surface of the bottom 15 of the chamber 10 where the lift valve 153 is located.

[0081] Specifically, the valve guide 165 is disposed on the side opposite to the side where the lifting axis 162 is located with respect to the lifting valve 153. The guide engagement portion 166 is attached to the upper surface side of the lifting valve 153 and is formed from the upper surface of the lifting valve 153 across the position of the valve guide 165. A through hole through which the valve guide 165 passes is formed in the guide engagement portion 166, and the valve guide 165 penetrates the through hole formed in the guide engagement portion 166.

[0082] Since the guide engagement portion 166 is attached to the lifting valve 153, when the lifting valve 153 moves, the guide engagement portion 166 also moves integrally. At this time, since the valve guide 165 extending in the vertical direction Z penetrates the through hole formed in the guide engagement portion 166, when the guide engagement portion 166 moves together with the lifting valve 153, the guide engagement portion 166 moves along the valve guide 165. Thereby, the valve guide 165 can guide the vertical movement in the Z direction of the lifting valve 153 to which the guide engagement portion 166 is attached.

[0083] The lifting valve 153 can open and close the opening 152 of the flow path portion 151 by moving in the vertical direction Z. However, when the lifting valve 153 opens the opening 152, between the inside of the chamber 10 and the flow path portion 151, the fluid flows from the portion between the outer peripheral portion of the lifting valve 153 and the mounting flange 141.

[0084] That is, when the lifting valve 153 closes the opening 152, the lower surface of the lifting valve 153 contacts the upper surface of the mounting flange 141, whereby the lifting valve 153 closes the opening 152. In this case, the fluid path between the chamber 10 and the flow path portion 151 is blocked by the contact portion between the lower surface of the lifting valve 153 and the upper surface of the mounting flange 141. When the lifting valve 153 opens the opening 152, since the lifting valve 153 moves upward, the lower surface of the lifting valve 153 separates from the upper surface of the mounting flange 141. As a result, between the chamber 10 and the flow path portion 151, fluid can flow between the chamber 10 and the flow path portion 151 from the portion between the lower surface of the lifting valve 153 and the upper surface of the mounting flange 141.

[0085] Therefore, the substantial opening of the fluid path flowing between the chamber 10 and the flow path portion 151 when the lifting valve 153 opens the opening 152 is the portion between the outer peripheral portion of the lower surface of the lifting valve 153 and the upper surface of the mounting flange 141. Since the distance d changes by moving the lifting valve 153 in the vertical direction Z between the lower surface of the lifting valve 153 and the upper surface of the mounting flange 141, the opening formed between the outer peripheral portion of the lower surface of the lifting valve 153 and the upper surface of the mounting flange 141 is formed as an adjustable opening 155 whose opening area changes by moving the lifting valve 153 in the vertical direction Z.

[0086] The adjustment opening 155 serves as the opening when fluid flows between the chamber 10 and the opening 152, and the opening area of the adjustment opening 155 is the flow area DA when fluid flows between the chamber 10 and the opening 152. The flow area DA of the adjustment opening 155 is a value calculated by integrating the length of the outer peripheral portion of the lower surface of the lifting valve 153 and the distance d between the lower surface of the lifting valve 153 and the upper surface of the mounting flange 141, and it changes according to the distance d between the lifting valve 153 and the mounting flange 141. That is, the flow area DA increases as the distance d between the lifting valve 153 and the mounting flange 141, that is, the distance d between the opening 152 of the flow path portion 151 and the lifting valve 153 increases, and the flow area DA decreases as the distance d between the opening 152 and the lifting valve 153 decreases. For this reason, the lifting valve 153 can change the flow area DA with respect to the opening 152 by changing the distance d between the lifting valve 153 and the opening 152 in the opening direction of the opening 152.

[0087] The lifting valve 153 capable of changing the flow area DA moves in the vertical direction Z by the servo actuator 160, and the servo actuator 160 moves the lifting valve 153 in the vertical direction Z based on a predetermined detection value. Specifically, the servo actuator 160 can move the lifting valve 153 based on the pressure in the chamber 10 detected by the vacuum gauge 180. Thereby, the servo actuator 160 can change the flow area DA based on the pressure in the chamber 10 detected by the vacuum gauge 180 (see FIG. 1).

[0088] <Operation of the surface treatment apparatus 1> The surface treatment apparatus 1 according to the present embodiment includes the above-described configuration, and its operation will be described below. FIG. 21 is an explanatory view showing a state in which the workpiece W is accommodated in the accommodation unit 100 shown in FIG. 1. In the surface treatment apparatus 1 according to the embodiment, for example, for a workpiece W made of a difficult-to-plate material such as a resin material on which it is difficult to form a metal thin film by ordinary plating, surface treatment is performed so that a metal thin film can be easily formed on the surface by plating. The workpiece W to be surface-treated by the surface treatment apparatus 1 according to the present embodiment is assumed to be a member having a relatively small size, and the surface treatment apparatus 1 is suitable for performing surface treatment on a large number of workpieces W having a small size all at once.

[0089] Note that the workpiece W to be surface-treated by the surface treatment apparatus 1 is larger in size than the holes formed in large numbers in the workpiece holding wall 101 of the accommodation unit 100 and is a member that cannot pass through the holes formed in the workpiece holding wall 101 of the accommodation unit 100.

[0090] FIG. 22 is a flowchart showing the procedure for performing surface treatment on the workpiece W by the surface treatment apparatus 1 according to the embodiment. When performing surface treatment on the workpiece W by the surface treatment apparatus 1, first, the workpiece W is accommodated in the accommodation unit 100 (step ST11). That is, a plurality of workpieces W are put into the accommodation unit 100 from the opening 103 of the accommodation unit 100.

[0091] Next, the accommodation unit 100 containing the workpiece W is placed in the chamber 10 (step ST12). The placement of the accommodation unit 100 into the chamber 10 is performed by attaching the accommodation unit 100 containing the workpiece W to the accommodation unit support member 110 in the chamber 10. That is, with respect to the chamber 10 in a state where both the first opening / closing member 20 and the second opening / closing member 30 are open, the accommodation unit 100 containing the workpiece W is inserted, and the accommodation unit 100 is attached to the accommodation unit support member 110. Thereby, the workpiece W is accommodated inside the chamber 10.

[0092] After the workpiece W is accommodated inside the chamber 10, the first opening / closing member 20 is rotated about the hinge portion 21 to close the opening 11 of the chamber 10 with the first opening / closing member 20 (step ST13). Thereby, a part of the plasma generation device 40 attached to the first opening / closing member 20 is positioned inside the chamber 10 (see FIGS. 3 and 9). In this case, at least the plate-like conductor portions 51 and 52 supported by the support plate 50 of the plasma generation device 40 are positioned inside the chamber 10, and the plate-like conductor portions 51 and 52 are made to enter the accommodation unit 100 from the opening 103 of the accommodation unit 100 arranged inside the chamber 10. Thereby, the plate-like conductor portions 51 and 52 included in the plasma generation device 40 are positioned relatively close to the workpiece W above the workpiece W accommodated in the accommodation unit 100.

[0093] Here, a pair of device-side correction plates 131, which are correction plates 130 for restricting the range where the workpiece W is arranged, are attached to the plasma generation device 40. Since the device-side correction plates 131 are arranged below the plate-like conductor portions 51 and 52 of the plasma generation device 40, when the plate-like conductor portions 51 and 52 are made to enter the accommodation unit 100 from the opening 103 of the accommodation unit 100, the device-side correction plates 131 also enter the accommodation unit 100. Thereby, the workpiece W accommodated in the accommodation unit 100 is in a state of being positioned between the pair of device-side correction plates 131 positioned inside the accommodation unit 100.

[0094] When the housing unit 100 containing the workpiece W is placed in the chamber 10 and the plasma generation device 40 is positioned in the chamber 10 by closing the first opening / closing member 20, the inside of the chamber 10 is evacuated by the pump unit 140 (step ST14). At this time, the path of the gas inflow portion 16 through which the gas used for sputtering flows into the chamber 10 is closed so that no gas flows from the gas inflow portion 16. When evacuating the inside of the chamber 10 by the pump unit 140, the turbo molecular pump 170 is operated to suck the gas in the chamber 10, which is the fluid sucked by the turbo molecular pump 170, and discharge it outside the chamber 10 by the turbo molecular pump 170. Further, the pump unit 140 adjusts the flow rate of the gas flowing from the inside of the chamber 10 toward the turbo molecular pump 170 by operating the flow rate adjustment valve 150 while the gas in the chamber 10 is being sucked by the turbo molecular pump 170. That is, the pump unit 140 adjusts the flow rate of the gas flowing from the inside of the chamber 10 toward the turbo molecular pump 170 according to the suction amount of the turbo molecular pump 170 and the opening degree of the flow rate adjustment valve 150. At this time, the adjustment of the flow rate to a certain extent is performed by adjusting the rotation speed of the turbo molecular pump 170, and the adjustment of the fine flow rate is performed by adjusting the opening degree of the flow rate adjustment valve 150. Thereby, the pressure inside the chamber 10 is adjusted.

[0095] Specifically, when the pump unit 140 is operating, the gas, which is the fluid in the chamber 10, flows toward the turbo molecular pump 170 side due to the suction force of the turbo molecular pump 170 through the flow path portion 151 (see FIG. 20) formed in the flow rate adjustment valve 150. The flow rate adjustment valve 150 adjusts the flow rate of the gas flowing from the chamber 10 side to the flow path portion 151 side by moving the lift valve 153 up and down in the vertical direction Z by the servo actuator 160 and changing the distance d from the opening 152 of the flow path portion 151. That is, when the gas in the chamber 10 flows from the chamber 10 into the flow path portion 151, it flows from the chamber 10 into the flow path portion 151 through the adjustment opening 155 (see FIG. 20), which is an opening formed between the outer peripheral portion of the lower surface of the lift valve 153 and the upper surface of the mounting flange 141. The adjustment opening 155 through which the gas flowing from the chamber 10 side to the flow path portion 151 passes can change the flow area DA, which is the opening area of the adjustment opening 155, by moving the lift valve 153 in the vertical direction Z and changing the distance d between the lift valve 153 and the mounting flange 141.

[0096] FIG. 23 is an explanatory diagram showing the relationship between the distance d between the lift valve 153 and the mounting flange 141 and the flow area DA. The flow area DA of the adjustment opening 155 is a value calculated by integrating the length of the outer peripheral portion of the lower surface of the lift valve 153 and the distance d between the lower surface of the lift valve 153 and the upper surface of the mounting flange 141. Therefore, the flow area DA is proportional to the distance d between the lift valve 153 and the mounting flange 141. Accordingly, the flow rate adjustment valve 150 can change the flow area DA in proportion to the amount of movement of the lift valve 153 in the vertical direction Z, and by moving the lift valve 153 in the vertical direction Z to change the flow area DA, the flow rate of the gas flowing from the chamber 10 side to the flow path portion 151 side can be adjusted.

[0097] When adjusting the flow rate of the gas flowing from inside the chamber 10 toward the flow path portion 151, the elevating valve 153 that moves in the vertical direction Z moves in the vertical direction Z by the driving force generated by the servo actuator 160. That is, when moving the elevating valve 153, the driving force generated by the servo actuator 160 is transmitted to the elevating shaft 162 via the worm jack 161, causing the elevating shaft 162 to move in the vertical direction Z. The movement of the elevating shaft 162 in the vertical direction Z is transmitted to the elevating valve 153 by the connecting member 163, causing the elevating valve 153 to also move in the vertical direction Z. As a result, the flow rate adjustment valve 150 can move the elevating valve 153 by the driving force generated by the servo actuator 160 and change the flow area DA.

[0098] When moving the elevating valve 153 by the driving force generated by the servo actuator 160, the servo actuator 160 operates based on the detected value of the pressure inside the chamber 10 detected by the vacuum gauge 180. For example, when the pressure inside the chamber 10 detected by the vacuum gauge 180 is higher than the set pressure, the servo actuator 160 operates in the direction of raising the elevating valve 153. As a result, the elevating valve 153 moves upward by the driving force of the servo actuator 160, so the flow area DA increases, and the gas inside the chamber 10 flows into the flow path portion 151 from the opening 152 of the flow path portion 151 through the adjustment opening 155 with a large flow area due to the suction force of the turbo molecular pump 170. Therefore, the pressure inside the chamber 10 rapidly decreases.

[0099] On the other hand, when the pressure in the chamber 10 detected by the vacuum gauge 180 is close to or lower than the set pressure, the servo actuator 160 operates in the direction of lowering the lifting valve 153. As a result, since the lifting valve 153 moves downward by the driving force of the servo actuator 160, the flow area DA becomes smaller, and a small amount of gas in the chamber 10 flows into the flow path portion 151 from the opening 152 of the flow path portion 151 through the adjustment opening 155 with a small flow area due to the suction force of the turbo molecular pump 170. For this reason, the pressure in the chamber 10 decreases at a slower rate or the pressure is maintained.

[0100] At that time, since the flow area DA of the adjustment opening 155 changes in proportion to the distance d between the lifting valve 153 and the mounting flange 141, the flow rate of the gas flowing from the chamber 10 to the flow path portion 151 side can be easily adjusted by adjusting the distance d between the lifting valve 153 and the mounting flange 141. Therefore, based on the pressure in the chamber 10 detected by the vacuum gauge 180, by adjusting the distance d between the lifting valve 153 and the mounting flange 141, the pressure in the chamber 10 can be easily maintained at a constant pressure, for example.

[0101] The pump unit 140 adjusts the flow area DA of the adjustment opening 155 by moving the lifting valve 153 in the vertical direction Z based on the pressure in the chamber 10 detected by the vacuum gauge 180 in this way, and adjusts the flow rate of the gas flowing from the chamber 10 to the flow path portion 151 side, thereby reducing the pressure in the chamber 10 to a predetermined set pressure. The set pressure in this case is set to a pressure suitable for generating plasma in the plasma generation device 40 and performing surface modification on the workpiece W, and is, for example, a pressure of about 10 Pa to 300 Pa. The pump unit 140 adjusts the pressure in the chamber 10 to a pressure of about 10 Pa to 300 Pa according to the set pressure, thereby bringing the inside of the chamber 10 from a low vacuum state to a medium vacuum state.

[0102] When the pressure inside the chamber 10 is reduced to the set pressure, surface modification is performed on the workpiece W by the plasma generation device 40 (step ST15). When performing surface modification by the plasma generation device 40, while supplying a plasma generation gas to the gas introduction part 57 (see FIGS. 5 and 6), the gap part 56 between the parallel plate-shaped conductor parts 51 and 52 (see FIGS. 5 and 6) is set in a high-frequency discharge state to generate plasma. The supply of the plasma generation gas to the gas introduction part 57 is performed by supplying the plasma generation gas from the gas supply part 44 to the gas flow path 42 and discharging the plasma generation gas from the gas supply hole 43 formed on one end side of the gas flow path 42 to the gas introduction part 57. Further, when setting the gap part 56 between the plate-shaped conductor parts 51 and 52 in a high-frequency discharge state, it is performed by operating the high-frequency power supply 61. Since the plasma generation gas supplied to the gas introduction part 57 flows through the through hole 54 formed in the plate-shaped conductor part 52 in the gap part 56, the plasma generation gas flowing into the gap part 56 is plasmaized in the gap part 56 in a high-frequency discharge state. That is, since the inside of the chamber 10 is decompressed to a pressure suitable for generating plasma by the pump unit 140, while flowing the plasma generation gas through the gap part 56 and setting the gap part 56 in a high-frequency discharge state, plasma is efficiently generated in the gap part 56.

[0103] In the gap part 56 between the plate-shaped conductor parts 51 and 52, plasma is generated in this way. However, the plasma generation gas continues to be supplied to the gas introduction part 57, and the plasma generation gas continues to flow through the through hole 54 formed in the plate-shaped conductor part 52 into the gap part 56. Therefore, plasma continues to be generated in the gap part 56. For this reason, the plasma generated in the gap part 56 flows out of the gap part 56 toward the opposite side of the side where the plate-shaped conductor part 52 is located through the through hole 53 formed in the plate-shaped conductor part 51. That is, the plasma generated in the gap part 56 flows out downward in the vertical direction Z through the through hole 53 of the plate-shaped conductor part 51.

[0104] At this time, the diameter of the through hole 53 of the plate-shaped conductor portion 51 is smaller than the diameter of the through hole 54 formed in the plate-shaped conductor portion 52. For this reason, the plasma gas, which is the gas turned into plasma in the gap portion 56, flows out from the through hole 53 downward in the vertical direction Z at a relatively high flow rate. Since the workpiece W to be processed accommodated in the accommodation unit 100 is located below the plate-shaped conductor portion 51 in the vertical direction Z, the plasma gas flowing out from the through hole 53 of the plate-shaped conductor portion 51 is blown onto the workpiece W accommodated in the accommodation unit 100. The workpiece W is thus surface-modified by the plasma generated by the plasma generation device 40. That is, the surface of the workpiece W is treated by the plasma.

[0105] Specifically, the surface treatment performed by the plasma is surface roughening in which the surface of the workpiece W is roughened by the ions in the plasma gas colliding with the workpiece W. Also, as other surface treatments performed by the plasma, cleaning of the surface of the workpiece W by the plasma and generation of hydrophilic functional groups on the surface of the workpiece W by the plasma are also cited as surface treatments performed on the workpiece W by the plasma. These surface treatments performed by the plasma generated by the plasma generation device 40 may be collectively referred to as surface modification in this embodiment.

[0106] Here, a pair of device-side correction plates 131, which are correction plates 130 for restricting the range where the workpiece W is disposed, are attached to the plasma generation device 40. For this reason, the plasma gas flowing out from the through hole 53 of the plate-shaped conductor portion 51 flows between the pair of device-side correction plates 131. Since the workpiece W to be processed accommodated in the accommodation unit 100 is located between the pair of device-side correction plates 131, as the plasma gas flows between the pair of device-side correction plates 131, the plasma gas hardly flows in directions other than the direction where the workpiece W is located, and a large amount of the plasma gas flows toward the workpiece W. As a result, most of the plasma gas flowing out from the through hole 53 of the plate-shaped conductor portion 51 flows toward the workpiece W, and the workpiece W is efficiently surface-treated by these plasma gases.

[0107] Thus, when performing surface treatment on the workpiece W by the plasma generation device 40, it is carried out while swinging the housing unit 100. The swinging of the housing unit 100 is performed by driving a servo motor 120 which is a swinging means for swinging the housing unit 100. When driving the servo motor 120 to swing the housing unit 100, the driving force generated by the servo motor 120 is transmitted from the output shaft 121 of the servo motor 120 to the housing unit support member 110 via the drive shaft 125. The housing unit support member 110 to which the driving force from the servo motor 120 is transmitted swings about the swing axis 111 of the housing unit support member 110 constituted by the drive shaft 125 and the support shaft 116. Thereby, the housing unit 100 supported by the housing unit support member 110 also swings integrally with the housing unit support member 110. That is, the housing unit 100 reciprocates in the swing direction about the swing axis 111 integrally with the housing unit support member 110 within the range of the swing angle in which the housing unit support member 110 can swing about the swing axis 111.

[0108] When the housing unit 100 swings, inertial forces are generated in the workpiece W accommodated in the housing unit 100 due to the reciprocating swing of the housing unit 100 in the swing direction. The workpiece W accommodated in the housing unit 100 moves within the housing unit 100 or the workpieces W collide with each other and the workpiece W is turned over due to this inertial force.

[0109] In addition, when swinging the housing unit 100 by the driving force generated by the servo motor 120, it is preferable to include operations that rapidly change the speed and acceleration. By rapidly changing the swing speed and acceleration of the housing unit 100, it becomes easier to move or turn over the workpiece W within the housing unit 100.

[0110] The plasma gas sprayed from the plasma generation device 40 onto the workpiece W accommodated in the accommodation unit 100 reaches the entire surface of each workpiece W by the movement or turnover of the workpiece W within the accommodation unit 100 due to the oscillation of the accommodation unit 100. That is, the workpiece W accommodated in the accommodation unit 100 is evenly exposed to the plasma over the entire surface when the accommodation unit 100 oscillates. As a result, the plurality of workpieces W accommodated in the accommodation unit 100 are surface-treated over the entire surface of each workpiece W by the plasma. Even when the shape of the workpiece W is a complex shape, the surface treatment is evenly performed over the entire surface of the workpiece W with a complex shape.

[0111] When the surface modification by the plasma generation device 40 has been performed for a predetermined time, the generation of plasma by the plasma generation device 40 is stopped, and the accommodation unit support member 110 also stops at the neutral position. After the generation of plasma by the plasma generation device 40 is stopped and the accommodation unit support member 110 also stops, the pressure inside the chamber 10 is made the same as the atmospheric pressure (step ST16). When making the pressure inside the chamber 10 the same as the atmospheric pressure, the pump unit 140 is stopped, and the pressure adjustment valve (not shown) installed in the chamber 10 is opened to take the air around the chamber 10 into the chamber 10. Thereby, the pressure inside the decompressed chamber 10 is increased, and the pressure inside the chamber 10 is made the same as the atmospheric pressure.

[0112] When the pressure inside the chamber 10 is made the same as the atmospheric pressure, the first opening / closing member 20 is opened, and the second opening / closing member 30 is closed (step ST17). Since the pressure inside the chamber 10 is almost the same as the atmospheric pressure outside the chamber 10, the first opening / closing member 20 can be easily opened by rotating around the hinge portion 21. After opening the first opening / closing member 20, the second opening / closing member 30 attached at a position different from the first opening / closing member 20 near the opening 11 of the chamber 10 is closed.

[0113] When closing the second opening / closing member 30, similar to the first opening / closing member 20, the second opening / closing member 30 is rotated about the hinge portion 31 to close the opening 11 of the chamber 10 with the second opening / closing member 30. Thereby, a part of the sputtering device 70 attached to the second opening / closing member 30 is positioned inside the chamber 10 (see FIGS. 4 and 10). In this case, at least the target 84 supported by the support plate 80 of the sputtering device 70 is positioned inside the chamber 10, and the target 84 enters the housing unit 100 from the opening 103 of the housing unit 100 arranged inside the chamber 10. Thereby, the target 84 of the sputtering device 70 is positioned relatively close to the workpiece W above the workpiece W accommodated in the housing unit 100.

[0114] At that time, similar to the plasma generation device 40, a pair of device-side correction plates 131, which are correction plates 130 for restricting the range where the workpiece W is arranged, are attached to the sputtering device 70. Since the device-side correction plates 131 are arranged below the target 84 of the sputtering device 70, when the target 84 is made to enter the housing unit 100 from the opening 103 of the housing unit 100, the device-side correction plates 131 also enter the housing unit 100. Thereby, the workpiece W accommodated in the housing unit 100 is positioned between the pair of device-side correction plates 131 arranged inside the housing unit 100, similar to the case when the first opening / closing member 20 is closed, even when the second opening / closing member 30 is closed.

[0115] Once the sputtering apparatus 70 is positioned within the chamber 10 by closing the second opening / closing member 30, the pump unit 140 reduces the pressure inside the chamber 10 (step ST18). The pressure reduction inside the chamber 10 is performed in the same manner as the pressure reduction (step ST14) performed using the pump unit 140 with the plasma generation apparatus 40 positioned within the chamber 10 by closing the first opening / closing member 20. That is, the pressure inside the chamber 10 is reduced to a set pressure suitable for performing sputtering on the workpiece W with the sputtering apparatus 70. Thereby, the inside of the chamber 10 is changed from a medium vacuum to a low vacuum state according to the set pressure.

[0116] Once the pressure inside the chamber 10 is reduced to the set pressure, sputtering is performed on the workpiece W by the sputtering apparatus 70 (step ST19). When performing sputtering by the sputtering apparatus 70, while flowing the gas used for sputtering into the chamber 10 from the gas inflow portion 16 disposed in the chamber 10, a magnetic field is generated by the magnet 81 of the sputtering apparatus 70 to ionize the gas flowing in from the gas inflow portion 16, and ions are made to collide with the target 84, thereby ejecting the particles of the target 84. At that time, since the inside of the chamber 10 is reduced to a pressure suitable for performing sputtering by the pump unit 140, while flowing the gas used for sputtering into the chamber 10 from the gas inflow portion 16, by generating a magnetic field with the magnet 81, the gas flowing in from the gas inflow portion 16 is efficiently ionized in the vicinity of the target 84 of the sputtering apparatus 70.

[0117] In this embodiment, since copper is used for the target 84, when ions of the gas ionized in the vicinity of the target 84 collide with the target 84, copper particles are ejected from the target 84. By colliding ions with the target 84, the particles ejected from the target 84 move downward, which is the opposite side of the side where the magnet 81 is located in the vertical direction Z. Since the workpiece W to be processed accommodated in the accommodation unit 100 is located below the target 84 in the vertical direction Z, the particles ejected from the target 84 move toward the workpiece W accommodated in the accommodation unit 100, adhere to the workpiece W, and deposit on the surface of the workpiece W. Thereby, a thin film is formed on the surface of the workpiece W by the substance forming the target 84, that is, a copper thin film is formed on the surface of the workpiece W.

[0118] At this time, since the surface of the workpiece W is surface-modified by the plasma generation device 40, when a film is formed on the surface of the workpiece W with the substance forming the target 84 by the sputtering device 70, the adhesion of the thin film to the surface of the workpiece W can be enhanced. That is, since the sputtering device 70 forms a film by sputtering on the surface of the workpiece W that has been surface-modified, a thin film can be formed on the surface of the workpiece W with high adhesion.

[0119] Here, a pair of device-side correction plates 131, which are correction plates 130 for restricting the range where the workpiece W is disposed, are attached to the sputtering device 70. For this reason, the particles ejected from the target 84 pass between the pair of device-side correction plates 131. Since the workpiece W accommodated in the accommodation unit 100 is located between the pair of device-side correction plates 131, when the particles ejected from the target 84 pass between the pair of device-side correction plates 131, the particles ejected from the target 84 do not tend to go in directions other than where the workpiece W is located, and many particles from the target 84 go toward the workpiece W. As a result, most of the particles ejected from the target 84 go toward the workpiece W, and a thin film is efficiently formed on the surface of the workpiece W by these particles.

[0120] Even when performing sputtering by the sputtering apparatus 70, similar to the case of surface modification of the workpiece W by the plasma generation apparatus 40, it is performed while swinging the housing unit 100. That is, the housing unit support member 110 to which the housing unit 100 is attached is swung about the swing axis 111 by the driving force generated by the servo motor 120. Thereby, the housing unit 100 in which the workpiece W is housed is swung about the swing axis 111.

[0121] When swinging the housing unit 100 while performing sputtering by the sputtering apparatus 70, similar to the case of swinging the housing unit 100 while performing surface modification by the plasma generation apparatus 40, it is preferable to include an operation of rapidly changing the speed and acceleration. By rapidly changing the swing speed and acceleration of the housing unit 100, it becomes easier to move or turn over the workpiece W within the housing unit 100.

[0122] The particles ejected from the target 84 and adhering to the surface of the workpiece W by performing sputtering with the sputtering apparatus 70 adhere to the entire surface of each workpiece W by the movement or turnover of the workpiece W within the housing unit 100 due to the swing of the housing unit 100. That is, the particles ejected from the target 84 adhere evenly to the entire surface of the workpiece W housed in the housing unit 100 due to the swing of the housing unit 100, and the thin film formed by the deposition of the substance forming the target 84 is formed on the entire surface of the workpiece W. Thereby, a thin film made of the substance forming the target 84 is formed on the entire surface of the plurality of workpieces W housed in the housing unit 100, and even when the shape of the workpiece W is a complex shape, the thin film is formed evenly on the entire surface of the workpiece W with the complex shape.

[0123] When sputtering by the sputtering device 70 has been performed for a predetermined time, the sputtering in the sputtering device 70 is stopped, and the housing unit support member 110 also stops at the neutral position. When the sputtering in the sputtering device 70 is stopped and the housing unit support member 110 also stops, the pressure inside the chamber 10 is made the same as the atmospheric pressure (step ST20). When making the pressure inside the chamber 10 the same as the atmospheric pressure, the pump unit 140 is stopped, and a valve (not shown) for pressure adjustment installed in the chamber 10 is opened, thereby taking in the air around the chamber 10 into the chamber 10. Thereby, the pressure inside the decompressed chamber 10 is increased, and the pressure inside the chamber 10 is made the same as the atmospheric pressure.

[0124] When the pressure inside the chamber 10 is made the same as the atmospheric pressure, the second opening / closing member 30 is opened, and the housing unit 100 is taken out (step ST21). Since the pressure inside the chamber 10 is almost the same as the atmospheric pressure outside the chamber 10, the second opening / closing member 30 can be easily opened by rotating around the hinge portion 31. After opening the second opening / closing member 30, the housing unit 100 housed inside the chamber 10 is taken out from the opening 11 of the chamber 10. That is, the housing unit 100 housed inside the chamber 10 is removed from the housing unit support member 110 in a state where the workpiece W is housed, and taken out of the chamber 10. Thereby, after performing surface modification with the plasma generation device 40 and then performing sputtering with the sputtering device 70, the workpiece W with a thin film having high adhesion formed on the surface is taken out from inside the chamber 10.

[0125] In the surface treatment apparatus 1, in this manner, a thin film with high adhesion is formed on the surface of the workpiece W made of a difficult-to-plate material. The workpiece W with the thin film formed on its surface is subjected to a plating process in a subsequent step. In the plating process performed in the subsequent step, for example, methods such as electrolytic plating, electroless plating, and fusion plating are used. Since these plating processes are performed on the workpiece W with the thin film formed on the surface with high adhesion by the substance forming the target 84, the thin film of the metal coated on the surface by the plating process can also be coated on the surface of the thin film formed on the surface of the workpiece W with high adhesion.

[0126] <Effects of the Embodiment> The flow rate adjustment valve 150 according to the above embodiment has a lifting valve 153 that can close the opening 152 by covering the entire area of the opening 152 of the flow path portion 151 through which the fluid flows, and can open the opening 152 by separating from the opening 152. Further, the lifting valve 153 can change the flow area DA when the fluid flows through the opening 152 by changing the distance d from the opening 152. Furthermore, the lifting valve 153 can be moved in the opening direction of the opening 152 by a servo actuator 160 which is a driving means based on a predetermined detection value, and by moving the lifting valve 153 in the opening direction of the opening 152, the flow area DA can be changed. The flow area DA when the fluid flows through the opening 152 changes according to the distance d between the lifting valve 153 and the opening 152 in this way, that is, the flow area DA is proportional to the distance d between the lifting valve 153 and the opening 152. Therefore, the flow area DA when the fluid flows through the opening 152 can be easily adjusted with high accuracy by adjusting the distance d between the lifting valve 153 and the opening 152 which is proportional to the flow area DA. As a result, the flow rate of the fluid can be adjusted with high accuracy.

[0127] In addition, since the shape of the lifting valve 153 as viewed in the opening direction of the opening 152, that is, the shape as viewed in the vertical direction Z, is substantially circular, the fluid can flow evenly from around the lifting valve 153 to the opening 152. As a result, when flowing the fluid to the opening 152 while adjusting the flow rate of the fluid, the fluid can be flowed without disturbing the flow of the fluid, so that it can be flowed more reliably with high accuracy. As a result, the flow rate of the fluid can be adjusted more reliably with high accuracy.

[0128] In addition, since the pump unit 140 according to the embodiment includes the flow rate adjustment valve 150 and the turbo molecular pump 170 which is a pump that sucks the fluid flowing through the flow path portion 151, by adjusting the distance d between the opening 152 of the flow path portion 151 through which the fluid flows and the lifting valve 153, the flow rate of the fluid sucked by the turbo molecular pump 170 can be easily adjusted with high accuracy. As a result, the flow rate of the fluid can be adjusted with high accuracy.

[0129] In addition, in the turbo molecular pump 170 included in the pump unit 140, the impeller 176 rotates around the rotation axis PC to suck the fluid flowing through the flow path portion 151, and the rotation axis PC of the turbo molecular pump 170 substantially coincides with the central axis VC of the substantially circular shape of the lifting valve 153, so that the fluid can be efficiently sucked. Specifically, since the turbo molecular pump 170 sucks the fluid by the rotation of the impeller 176, the flow velocity of the fluid is relatively slow near the rotation axis PC of the impeller 176, and the flow velocity of the fluid becomes fast near the outer end of the impeller 176 in the radial direction centered on the rotation axis PC. For this reason, the fluid sucked by the turbo molecular pump 170 can suck a large amount of fluid at a high flow velocity from near the outer peripheral portion of the lifting valve 153 formed in a substantially circular shape. As a result, even when the lifting valve 153 is disposed on the upstream side in the suction direction when sucking the fluid by the turbo molecular pump 170, the fluid can be efficiently sucked.

[0130] That is, since the flow rate during fluid suction is originally not large near the rotation axis PC of the impeller 176 in the turbo molecular pump 170, even if the lift valve 153 is arranged on the upstream side in the fluid suction direction in the turbo molecular pump 170, the fluid flow rate does not change much near the rotation axis PC of the impeller 176. For this reason, the turbo molecular pump 170 with the lift valve 153 arranged on the upstream side in the fluid suction direction can suck a large amount of fluid from near the outer peripheral portion of the lift valve 153, that is, near the outer end of the impeller 176 in the radial direction centered on the rotation axis PC, without being much affected by the arrangement of the lift valve 153. As a result, while suppressing a decrease in efficiency when sucking fluid, the fluid flow rate can be adjusted with high accuracy.

[0131] Further, regardless of the distance d between the opening 152 of the flow path portion 151 and the lift valve 153 in the pump unit 140, since the fluid flows from the portion between the outer peripheral portion of the lift valve 153 and the mounting flange 141 into the flow path portion 151, the fluid flow direction can be made constant regardless of the opening degree of the flow rate adjustment valve 150. That is, the flow rate adjustment valve 150 can suppress a change in the fluid flow direction when the opening degree of the valve changes, such as a butterfly valve or a valve that moves a valve plate in a direction intersecting the direction of the flow path. Thereby, the pump unit 140 having the flow rate adjustment valve 150 can suppress a large change in the fluid flow in the chamber 10 according to the opening degree of the flow rate adjustment valve 150. Therefore, the pump unit 140 arranged directly below the housing unit 100 that houses the workpiece W can suppress the fluid flow in the chamber 10 from being disturbed according to the opening degree of the flow rate adjustment valve 150, and can suppress the disturbance of the fluid flow around the workpiece W during suction of the fluid in the chamber 10. As a result, the quality of the workpiece W to be surface-treated by the surface treatment apparatus 1 can be stabilized.

[0132] Further, the surface treatment apparatus 1 according to the embodiment includes the pump unit 140 and a chamber 10 capable of accommodating a workpiece W to be surface-treated therein. An opening 152 of a flow path portion 151 through which a fluid flows opens to the chamber 10, and a lift valve 153 is disposed in the chamber 10. Thereby, the pump unit 140 can easily adjust the flow rate of the fluid sucked by the turbo molecular pump 170 from inside the chamber 10 with high accuracy by adjusting the distance d between the lift valve 153 and the opening 152 of the flow rate adjustment valve 150. Further, since the servo actuator 160 that moves the lift valve 153 moves the lift valve 153 based on the pressure inside the chamber 10, the flow rate of the fluid inside the chamber 10 sucked by the turbo molecular pump 170 can be easily adjusted with high accuracy based on the pressure inside the chamber 10. As a result, the flow rate of the fluid can be adjusted with high accuracy.

[0133] [Modification Example] [Modification Example of the Correction Plate 130] In the surface treatment apparatus 1 according to the above-described embodiment, as the correction plate 130 that limits the range where the workpiece W is disposed, the apparatus-side correction plate 131 attached to the plasma generation device 40 and the sputtering device 70 is used. However, as the correction plate 130, other than the apparatus-side correction plate 131 may be used. FIG. 24 is an explanatory view of the correction plate 130 in a state where the plasma generation device 40 is located inside the chamber 10, which is a modification example of the surface treatment apparatus 1 according to the embodiment. FIG. 25 is a cross-sectional view taken along the line J-J of FIG. 24. As shown in FIGS. 24 and 25, the correction plate 130 may have a housing unit-side correction plate 133 attached to the housing unit 100 in addition to the apparatus-side correction plate 131 attached to the plasma generation device 40 and the sputtering device 70 (see FIG. 10). The housing unit-side correction plate 133 is a correction plate 130 attached to the bottom of the housing unit 100 inside the housing unit 100.

[0134] In the description of the accommodation unit side correction plate 133 using FIGS. 24 and 25, the relative relationship between the device side correction plate 131 attached to the plasma generation device 40 and the accommodation unit side correction plate 133 will be described. However, the relative relationship between the device side correction plate 131 attached to the sputtering device 70 and the accommodation unit side correction plate 133 is also the same.

[0135] A pair of accommodation unit side correction plates 133 are arranged inside the accommodation unit 100, and the pair of accommodation unit side correction plates 133 are spaced apart in the length direction Y. Also, the interval between the pair of accommodation unit side correction plates 133 in the length direction Y is slightly larger than the interval between the pair of device side correction plates 131.

[0136] Further, the accommodation unit side correction plate 133 has a substantially constant height in the vertical direction Z and is formed to extend in the width direction X. The height of the accommodation unit side correction plate 133 is such that the position of the upper end of the accommodation unit side correction plate 133 is above the position of the lower end of the device side correction plate 131 when the plasma generation device 40 is located in the chamber 10. For this reason, in a state where the plasma generation device 40 is located in the chamber 10, the pair of accommodation unit side correction plates 133 sandwich the pair of device side correction plates 131 from both sides in the length direction Y, and the vicinity of the upper end of the accommodation unit side correction plate 133 in the vertical direction Z overlaps the vicinity of the lower end of the device side correction plate 131.

[0137] The accommodation unit 100 to which the accommodation unit side correction plate 133 is attached can swing integrally with the accommodation unit support member 110 about the swing axis 111. However, the accommodation unit side correction plate 133 can overlap the device side correction plate 131 regardless of the swing angle of the accommodation unit 100. That is, the accommodation unit side correction plate 133 is arranged so as to be continuously overlappable with the device side correction plate 131 regardless of the change in the relative angle with respect to the device side correction plate 131 accompanying the swing of the accommodation unit 100.

[0138] Thus, when the housing unit side correction plates 133 are attached to the housing unit 100, when the workpiece W is housed in the housing unit 100 for performing surface treatment on the workpiece W, the workpiece W can be housed between the pair of housing unit side correction plates 133 in the housing unit 100. In this state, when the first opening / closing member 20 and the second opening / closing member 30 are closed, the pair of apparatus side correction plates 131 enter between the pair of housing unit side correction plates 133 arranged in the housing unit 100.

[0139] Specifically, the interval between the pair of apparatus side correction plates 131 is slightly smaller than the interval between the pair of housing unit side correction plates 133 arranged in the housing unit 100. For this reason, when the first opening / closing member 20 and the second opening / closing member 30 are closed, the pair of apparatus side correction plates 131 enter between the pair of housing unit side correction plates 133. Thereby, the plurality of workpieces W housed in the housing unit 100 and positioned between the pair of housing unit side correction plates 133 enter between the pair of apparatus side correction plates 131. In other words, the pair of apparatus side correction plates 131 cover the workpiece W housed in the housing unit 100 from both sides in the length direction Y.

[0140] Thereby, when surface modification is performed by the plasma generation device 40, most of the plasma gas from the plasma generation device 40 surely flows toward the workpiece W through between the pair of apparatus side correction plates 131, and the workpiece W is efficiently surface-treated by the plasma gas. Similarly, when sputtering is performed by the sputtering device 70, most of the particles ejected from the target 84 surely head toward the workpiece W through between the pair of apparatus side correction plates 131, and a thin film is efficiently formed on the surface of the workpiece W by these particles. As a result, a desired treatment can be surely performed on the workpiece W.

[0141] <Modification Example of the Pump Unit 140> Further, in the pump unit 140 according to the above-described embodiment, the mounting flange 141 to which the pump flange 171 of the turbo molecular pump 170 is attached is attached to the lower surface of the bottom 15 of the chamber 10, so that the pump unit 140 is attached to the bottom 15 of the chamber 10. However, the pump unit 140 may be attached to the chamber 10 in other forms.

[0142] FIG. 26 is an explanatory view of a modification of the pump unit 140 according to the embodiment, and shows a case where the pump flange 171 of the turbo molecular pump 170 and the mounting flange 141 are shared. For example, as shown in FIG. 26, the pump unit 140 may share a pump flange 171 for attaching the turbo molecular pump 170 to another member and a mounting flange 141 for attaching the pump unit 140 to the chamber 10. That is, a flow path portion 151 (see FIGS. 18 and 20) having an opening 152 (see FIGS. 18 and 20) that is opened and closed by the vertical movement of the lift valve 153 of the flow rate adjustment valve 150 in the vertical direction Z may be formed in the pump flange 171 of the turbo molecular pump 170. In this case, the drive means support portion 143 to which the servo actuator 160 is attached is attached to the pump flange 171 shared with the mounting flange 141.

[0143] Further, when the pump flange 171 and the mounting flange 141 are shared, a valve guide 165 that guides the opening and closing operation of the lift valve 153 is provided on the pump flange 171, and it is preferable that a through hole that penetrates in the vertical direction Z and through which the valve guide 165 passes is formed in the lift valve 153. By being formed in these ways, the pump unit 140 can attach the flow rate adjustment valve 150 and the turbo molecular pump 170 to the chamber 10 integrally, including the valve guide 165. As a result, the workability when assembling the surface treatment apparatus 1 can be improved.

[0144] In the surface treatment apparatus 1 according to the above-described embodiment, a plasma generation apparatus 40 is used as the first treatment apparatus disposed in the first opening / closing member 20, and a sputtering apparatus 70 is used as the second treatment apparatus disposed in the second opening / closing member 30. However, the first treatment apparatus and the second treatment apparatus may be other apparatuses.

[0145] In the surface treatment apparatus 1 according to the above-described embodiment, the form in which the first treatment apparatus and the second treatment apparatus are provided has been described. However, a third treatment apparatus and a fourth treatment apparatus may be further provided. In that case, the hinge portions of the respective treatment apparatuses may be arranged in the chamber 10 with an appropriate interval between the hinge portions attached to different treatment apparatuses according to the shape of the treatment apparatuses and the chamber 10 or the like. That is, a plurality of treatment apparatuses that are openably and closably attached to the chamber 10 via the hinge portions can be alternately positioned in the chamber 10, and in a state where the treatment apparatuses are positioned outside the chamber 10, they may be positioned outside the chamber 10 without interfering with other treatment apparatuses.

[0146] <Experiment on Exhaust Velocity with Respect to Valve Opening Degree> The inventors conducted an experiment on the relationship between the valve opening degree and the effective exhaust velocity in the pump unit 140 according to the present embodiment. Next, an experiment on the relationship between the valve opening degree and the effective exhaust velocity in the pump unit will be described. FIG. 27 is a schematic diagram of an experimental apparatus 200 used for the experiment on the relationship between the valve opening degree and the effective exhaust velocity. The experiment on the relationship between the valve opening degree and the effective exhaust velocity in the pump unit was conducted using the experimental apparatus 200 shown in FIG. 27. The experimental apparatus 200 includes a main body portion 201 with a vacuum furnace 202 inside, a pump unit 210 disposed at the bottom 205 located at the lower end in the vertical direction Z of the main body portion 201, and a pressure gauge 220 for detecting the pressure in the vacuum furnace 202 of the main body portion 201. A flow path portion 206 through which fluid flows is formed in the bottom 205 of the main body portion 201. The flow path portion 206 is formed as a hole penetrating the bottom 205 in the vertical direction Z.

[0147] The pump unit 210 has a lift valve 211 disposed in the vacuum furnace 202 and a turbo molecular pump 215 attached to the lower surface side in the vertical direction Z at the bottom 205 of the main body 201. Further, similar to the pump unit 140 according to the above-described embodiment, the pump unit 210 has a servo actuator (not shown) which is a driving means for moving the lift valve 211 in the vertical direction Z. Thereby, the lift valve 211 can be moved in the vertical direction Z in the vacuum furnace 202 by the power transmitted from the servo actuator, and the opening and closing of the flow path portion 206 formed at the bottom 205 of the main body 201 is performed from the inside of the main body 201. That is, the lift valve 211 is located at one end of the flow path portion 206 and can open and close the opening portion 207 which is a portion opening to the vacuum furnace 202.

[0148] FIG. 28 is a diagram showing the results of an experiment on the exhaust speed with respect to the valve opening performed using the experimental apparatus 200 shown in FIG. 27. The experiment on the relationship between the valve opening and the effective exhaust speed, performed using the experimental apparatus 200 shown in FIG. 27, was conducted by changing the valve opening while exhausting the gas in the vacuum furnace 202 by the pump unit 210 and measuring the exhaust speed for each valve opening. In this experiment, the turbo molecular pump 215 of the pump unit 210 was operated at a constant rotation speed. Further, the exhaust speed was measured by changing the valve opening while a fixed amount of gas was flowing into the vacuum furnace 202, and obtaining the exhaust speed for each valve opening from the equilibrium pressure of the vacuum furnace 202 at each valve opening.

[0149] In this experiment, the valve opening degree was defined as follows: the state where the lift valve 211 was in contact with the bottom 205 of the main body 201 and the opening 207 of the flow path portion 206 was closed was set as 0%, and when the lift valve 211 was moved to the uppermost position within the range where it could be moved in the vertical direction Z of the lift valve 211, the distance de in the vertical direction Z between the lift valve 211 and the bottom 205 was set as 100%. In other words, the valve opening degree was indicated by using the distance de between the opening 207 of the flow path portion 206 formed in the bottom 205 of the main body 201 and the lift valve 211 in the moving direction of the lift valve 211, with the minimum distance being set as 0% and the maximum distance being set as 100%.

[0150] As a result of conducting an experiment using the experimental apparatus 200 shown in FIG. 27, it was found that the exhaust speed Se changed according to the valve opening degree as shown in FIG. 28. Note that in FIG. 28, the horizontal axis represents the valve opening degree (%), and the vertical axis represents the exhaust speed (L / sec). As a result of conducting an experiment using the experimental apparatus 200 shown in FIG. 27, it was found that the exhaust speed Se changed approximately according to the linear equation y = ax - b, where y was the exhaust speed Se, x was the valve opening degree, a was the slope, and b was the intercept, with respect to the valve opening degree.

[0151] From this experimental result, it was found that for the pump unit 140 according to the above-described embodiment, which had a configuration equivalent to that of the experimental apparatus 200 shown in FIG. 27, the exhaust speed when exhausting the gas in the chamber 10 from the flow path portion 151 to the outside of the chamber 10 changed in a linear relationship with respect to the valve opening degree, which was the opening degree of the lift valve 153. Therefore, when exhausting the gas in the chamber 10 using the pump unit 140, it became possible to control the exhaust speed by open-loop control by adjusting the valve opening degree of the lift valve 153, and it was possible to easily adjust the flow rate of the fluid with high accuracy.

Explanation of Reference Numerals

[0152] 1…Surface treatment apparatus, 10…Chamber, 11…Opening, 12…Upper wall, 13…Side wall, 14…Support wall, 15…Bottom, 16…Gas inlet, 20…First opening / closing member, 21…Hinge portion, 30…Second opening / closing member, 31…Hinge portion, 40…Plasma generation device, 41…Gas supply pipe, 42…Gas flow path, 43…Gas supply hole, 44…Gas supply portion, 45…Gas supply pipe attachment member, 46…Support member, 50…Support plate, 50a…Recessed portion, 51…Plate-shaped conductor portion, 52…Plate-shaped conductor portion, 53…Through hole, 54…Through hole, 55…Spacer, 56…Gap portion, 57…Gas introduction portion, 58…Holding member, 60…MB, 61…RF, 63…Ground, 64…MFC, 70…Sputtering device, 71…Cooling water pipe, 72…Cooling water path, 73…Water inlet, 74…Water outlet, 75…Cooling water pipe attachment member, 76…Support member, 80…Support plate, 81…Magnet, 82…Cooling jacket, 83…Insulating material, 84…Target, 85…Holding member, 100…Containment unit, 101…Workpiece holding wall, 102…Side wall, 103…Opening, 104…Mounting plate, 110…Containment unit support member, 111…Swing axis, 112…Side plate, 113…Attachment member, 114…Swing means axis connection portion, 115…Support axis connection portion, 116…Support axis, 117…Support axis support member, 120…Servo motor, 121…Output shaft, 122…Servo motor attachment member, 125…Drive shaft, 130…Correction plate, 131…Device side correction plate, 132…Attachment portion, 133…Containment unit side correction plate, 140…Pump unit, 141…Mounting flange, 143…Drive means support portion, 150…Flow rate adjustment valve, 151…Flow path portion, 152…Opening, 153…Lift valve, 155…Adjustment opening, 160…Servo actuator, 161…Worm jack, 162…Lift shaft, 163…Connection member, 165…Valve guide, 166…Guide engagement portion, 170…Turbo molecular pump, 171…Pump flange, 173…Casing, 174…Fixed wing, 176…Impeller, 177…Shaft, 178…Moving wing, 180…Vacuum gauge, 200…Experimental apparatus, 201…Main body portion, 202…Vacuum furnace, 205…Bottom, 206…Flow path portion, 207…Opening, 210…Pump unit, 211…Lift valve, 215…Turbo molecular pump, 220…Pressure gauge

Claims

【Claim 1】 A flow path portion having an opening formed at one end through which a fluid flows; A lift valve that can cover the entire opening to close the opening, can open the opening by separating from the opening in the opening direction of the opening, and can change the flow area with respect to the opening by changing the distance from the opening in the opening direction; Drive means disposed outside the flow path portion for moving the lift valve in the opening direction based on a predetermined detection value; A connecting member connected to the surface of the lift valve on the side opposite to the surface that opens and closes the opening, and moving in the opening direction by the driving force generated by the drive means to move the lift valve in the opening direction; A lift shaft connected to the connecting member; A worm jack for moving the lift shaft by the driving force transmitted from the drive means; A plate-shaped mounting flange attached to the outer surface of a chamber in which the lift valve is disposed inside and a flow rate adjustment valve is attached; A valve guide disposed in the vicinity of the portion of the inner surface of the chamber where the lift valve is located, formed in a shape extending in the direction in which the lift valve moves, and guiding the opening and closing operation of the lift valve; A guide engaging portion that is attached to the lift valve, formed across the position of the valve guide from the lift valve, and through which the valve guide passes to engage with the valve guide; Comprising; The flow path portion is formed as a hole penetrating in the thickness direction of the mounting flange; The mounting flange is attached to the chamber with the surface on the side where the opening of the flow path portion is located facing the chamber side; The drive means and the worm jack are attached to the opposite side surface of the mounting flange from the surface to which the chamber is attached; The lift shaft is disposed through the mounting flange; The lift valve has a substantially circular shape when viewed in the opening direction; The lift shaft and the valve guide are disposed at positions 180° apart from each other in the circumferential direction centered on the center of the circular shape of the lift valve; The lift valve is; The lift valve closes the opening when the surface on the side opposite to the surface to which the connecting member is connected contacts the surface on the side of the mounting flange to which the chamber is attached; A flow rate adjustment valve, wherein the lift valve opens the opening by moving away from the surface of the mounting flange on the side to which the chamber is attached. **Claim 2** A flow path portion at one end of which an opening is formed through which fluid flows, A lift valve that can cover the entire area of the opening to close the opening, and can open the opening by moving away from the opening in the opening direction of the opening, and can change the flow area with respect to the opening by changing the distance from the opening in the opening direction; Drive means disposed outside the flow path portion for moving the lift valve in the opening direction based on a predetermined detection value; A connecting member connected to the surface of the lift valve opposite to the surface that opens and closes the opening, and moving the lift valve in the opening direction by moving in the opening direction by the driving force generated by the drive means; A flow rate adjustment valve comprising: A pump disposed on the opposite side of the end of the flow path portion where the opening is formed, for sucking the fluid flowing through the flow path portion; A lift shaft connected to the connecting member; A worm jack for moving the lift shaft by the driving force transmitted from the drive means; A plate-shaped mounting flange attached to the outer surface of a chamber in which the lift valve is disposed inside and to which the flow rate adjustment valve and the pump are attached; A valve guide disposed in the vicinity of the portion of the inner surface of the chamber where the lift valve is located, formed in a shape extending in the direction in which the lift valve moves, and guiding the opening and closing operation of the lift valve; A guide engagement portion that is attached to the lift valve, formed across the position of the valve guide from the lift valve, and through which the valve guide passes through the through hole to engage with the valve guide; Comprising: The flow path portion is formed as a hole penetrating in the thickness direction of the mounting flange; The mounting flange is attached to the chamber in such a direction that the surface of the flow path portion on the side where the opening is located faces the chamber side; The drive means, the worm jack, and the pump are attached to the opposite side surface of the surface of the mounting flange to which the chamber is attached; The lift shaft is disposed through the mounting flange; The lift valve has a substantially circular shape when viewed in the opening direction. The lifting shaft and the valve guide are arranged at positions 180° apart from each other in the circumferential direction centered on the center of the circular shape of the lifting valve. The lift valve is The lift valve closes the opening by the surface on the opposite side of the surface to which the connecting member is connected contacting the surface on the side of the chamber in the mounting flange where the lift valve is mounted. A pump unit characterized in that the lift valve opens the opening by moving away from the surface on the side of the chamber in the mounting flange where the lift valve is mounted. **Claim 3**: The pump has an impeller that rotates about a rotation axis. By rotating the impeller about the rotation axis, the fluid flowing through the flow path portion is sucked. The rotation axis of the pump substantially coincides with the central axis of a substantially circular shape that is the shape of the lift valve. The pump unit according to claim 2. **Claim 4** A flow path portion with an opening formed at one end through which fluid flows, A lift valve that can cover the entire area of the opening to close the opening, and can open the opening by separating from the opening in the opening direction of the opening, and can change the flow area with respect to the opening by changing the distance from the opening in the opening direction. Drive means disposed outside the flow path portion for moving the lift valve in the opening direction based on a predetermined detection value. A connecting member connected to the surface on the opposite side of the surface that opens and closes the opening in the lift valve, and moving in the opening direction by the driving force generated by the driving means to move the lift valve in the opening direction. A flow rate adjustment valve comprising A pump disposed on the opposite side of the end of the flow path portion where the opening is formed, for sucking the fluid flowing through the flow path portion. A chamber capable of accommodating a material to be surface-treated therein. A lifting shaft connected to the connecting member. A worm jack for moving the lifting shaft by the driving force transmitted from the driving means. A mounting flange made of a plate-like member and attached to the outer surface of the chamber. A valve guide disposed in the vicinity of the portion of the inner surface of the chamber where the lift valve is located, formed in a shape extending in the direction in which the lift valve moves, and guiding the opening and closing operation of the lift valve. It is attached to the lifting valve, formed from the position of the lifting valve to the position of the valve guide, and has a through-hole through which the valve guide passes, and the valve guide engages with the guide engagement portion by passing through the through-hole. It includes The flow path portion is formed as a hole penetrating in the thickness direction of the mounting flange. The mounting flange is attached to the chamber with the surface on the side where the opening of the flow path portion is located facing the chamber side. The opening opens to the chamber. The lifting valve is disposed in the chamber. The driving means, the worm jack, and the pump are attached to the opposite side of the surface of the mounting flange where it is attached to the chamber. The lifting shaft is disposed through the mounting flange and the chamber. The lifting valve has a substantially circular shape when viewed in the opening direction. The lifting shaft and the valve guide are arranged at positions 180° apart from each other in the circumferential direction centered on the center of the circle which is the shape of the lifting valve. The lifting valve The lifting valve closes the opening when the surface on the opposite side of the surface to which the connecting member is connected contacts the surface on the side of the mounting flange where it is attached to the chamber. The lifting valve opens the opening by moving away from the surface on the side of the mounting flange where it is attached to the chamber. The driving means moves the lifting valve based on the pressure in the chamber, and is a surface treatment apparatus characterized by this.

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