Substrate processing system

Abstract

To appropriately shield heat between a first substrate processing chamber and a second substrate processing chamber provided adjacent to each other by a heat shield member, and appropriately suppress the consumption of the heat shield member during substrate processing.SOLUTION: A substrate processing system includes a first chamber with a first substrate transfer port, a second chamber having a second substrate transfer port and configured to perform substrate processing, a connecting member that communicates the first substrate transfer port and the second substrate transfer port with each other, a heat shield portion provided along the second substrate transport port in a cross-sectional view and configured to thermally block between the first chamber and the second chamber, and a protective member provided between the heat shield portion and the second substrate transfer port and configured to prevent the heat shield portion from being consumed during substrate processing in the second chamber.SELECTED DRAWING: Figure 2A

Description

Technical Field

[0001] The present disclosure relates to a substrate processing system.

Background Art

[0002] Patent Document 1 discloses a gate valve that opens and closes an opening connecting a process chamber and a transfer chamber. When the gate valve closes the opening, it forms a refracted gap for preventing radicals in the process chamber from reaching the seal member of the gate valve.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure appropriately thermally insulates between a first substrate processing chamber and a second substrate processing chamber provided adjacent to each other by a heat insulating member, and appropriately suppresses consumption of the heat insulating member during substrate processing.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing system including: a first chamber having a first substrate transfer port; a second chamber having a second substrate transfer port and configured to perform substrate processing; a connection member that mutually communicates the first substrate transfer port and the second substrate transfer port; a heat insulating portion provided along the second substrate transfer port in a cross-sectional view and configured to thermally isolate between the first chamber and the second chamber; and a protective member provided between the heat insulating portion and the second substrate transfer port and configured to prevent consumption of the heat insulating portion during substrate processing in the second chamber.

Effects of the Invention

[0006] According to the present disclosure, it is possible to appropriately insulate heat between a first substrate processing chamber and a second substrate processing chamber provided adjacent to each other by a heat insulating member, and appropriately suppress the consumption of the heat insulating member during substrate processing.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2A

Figure 2B

Figure 3

Figure 4

Figure 5A

Figure 5B

Figure 6A

Figure 6B

Figure 7

Embodiments for Carrying Out the Invention

[0008] In the manufacturing process of semiconductor devices, a processing gas is supplied to a semiconductor wafer (hereinafter simply referred to as "wafer"), and various plasma processes such as etching, film formation, and diffusion processes are performed on the wafer. These plasma processes are performed inside a vacuum processing chamber whose internal pressure can be controlled to a reduced pressure atmosphere. The vacuum processing chamber communicates with a transfer chamber that transfers the wafer in and out of the vacuum processing chamber through an opening as an inlet / outlet, and the opening is opened and closed using a gate valve.

[0009] Here, when plasma processing is performed inside the vacuum processing chamber as described above, a sealing member (for example, an O-ring) provided on the gate valve may be consumed due to the influence of radicals generated inside the vacuum processing chamber. Therefore, it is necessary to protect the sealing member of the gate valve from consumption caused by radicals.

[0010] Patent Document 1 described above discloses a gate valve used for opening and closing the inlet / outlet of a process chamber (vacuum processing chamber). According to the gate valve described in Patent Document 1, when closing the opening as the inlet / outlet, a convex wall formed on the valve plate of the gate valve fits into the inside of the opening, thereby forming a narrow gap at the end of the opening. And according to the gate valve described in Patent Document 1, this narrow gap is intended to reduce the amount of radicals reaching the seal member provided on the gate valve.

[0011] By the way, in the manufacturing process of semiconductor devices, plasma processing in a high-temperature environment (for example, 100°C or higher), typified by post-treatment (for example, ashing treatment), may be performed. Here, generally, electrical components that are vulnerable to high-temperature environments, such as positioning sensors and actuators, are used in the gate valve. In addition to the radical countermeasures described above, it is necessary to take measures to prevent the temperature rise of these electrical components.

[0012] As a method for preventing the temperature rise of electrical components, for example, a heat shield (such as a resin material) for preventing heat transfer from the aforementioned vacuum processing chamber to the transfer chamber is used as an adapter to connect the vacuum processing chamber and the transfer chamber. However, a high-strength heat shield (resin material) that can be suitably used as an adapter is vulnerable to radical consumption, that is, it is necessary to take radical countermeasures against the heat shield. Also, for example, when a corrosive gas is used in plasma processing, the heat shield may be consumed by the corrosive gas, that is, it is necessary to take countermeasures against the corrosive gas for the heat shield.

[0013] And there is no description in Patent Document 1 regarding achieving both radical countermeasures, corrosive gas countermeasures, and temperature rise countermeasures in the gate valve in this way. That is, there is room for improvement in the conventional substrate processing system for performing plasma processing on a wafer.

[0014] The technology according to the present disclosure appropriately insulates between a first substrate processing chamber and a second substrate processing chamber provided adjacent to each other with a heat insulating member, and appropriately suppresses the consumption of the heat insulating member during substrate processing. Hereinafter, a wafer processing apparatus as a substrate processing system according to the present embodiment and a wafer processing method performed using the wafer processing apparatus will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0015] <Wafer Processing Apparatus> First, the wafer processing apparatus according to the present embodiment will be described. FIG. 1 is a plan view showing an outline of the configuration of the wafer processing apparatus 1 according to the present embodiment. In the following description, in the wafer processing apparatus 1, a case where plasma processing for post-processing such as ashing processing is performed on a wafer W as a substrate and the heat insulating portion described later is protected from radicals generated during plasma processing will be described as an example.

[0016] As shown in FIG. 1, the wafer processing apparatus 1 has a configuration in which an atmospheric section 10 and a reduced-pressure section 11 are integrally connected via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired process on the wafer W under an atmospheric pressure atmosphere. The reduced-pressure section 11 includes a reduced-pressure module that performs a desired process on the wafer W under a reduced-pressure atmosphere.

[0017] The load lock modules 20 and 21 are provided so as to connect a loader module 30 (described later) of the atmospheric section 10 and a transfer module 50 (described later) of the reduced-pressure section 11 via gate valves 22 and 23, respectively. The load lock modules 20 and 21 are configured to temporarily hold the wafer W. Further, the load lock modules 20 and 21 are configured such that the inside can be switched between an atmospheric pressure atmosphere and a reduced-pressure atmosphere (vacuum state).

[0018] The atmospheric section 10 includes a loader module 30 having a wafer transfer mechanism 40 (described later) and a load port 32 on which a hoop 31 capable of storing a plurality of wafers W is placed. Note that an orienter module (not shown) for adjusting the horizontal orientation of the wafer W or a storage module (not shown) for storing a plurality of wafers W may be provided adjacent to the loader module 30.

[0019] The inside of the loader module 30 is formed of a rectangular housing, and the inside of the housing is maintained at an atmospheric pressure atmosphere. A plurality of, for example, five load ports 32 are arranged in parallel on one side surface constituting the long side of the housing of the loader module 30. The load lock modules 20 and 21 are arranged in parallel on the other side surface constituting the long side of the housing of the loader module 30.

[0020] Inside the loader module 30, a wafer transfer mechanism 40 for transferring the wafer W is provided. The wafer transfer mechanism 40 includes a transfer arm 41 that holds and moves the wafer W, a turntable 42 that rotatably supports the transfer arm 41, and a rotary mounting table 43 on which the turntable 42 is mounted. Further, inside the loader module 30, a guide rail 44 extending in the longitudinal direction of the loader module 30 is provided. The rotary mounting table 43 is provided on the guide rail 44, and the wafer transfer mechanism 40 is configured to be movable along the guide rail 44.

[0021] The decompression unit 11 has a transfer module 50 as a substrate transfer chamber for transferring the wafer W therein, and a processing module 60 for performing a desired process on the wafer W transferred from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 are each maintained in a decompressed atmosphere. In this embodiment, a plurality of, for example, eight processing modules 60 are connected to one transfer module 50. Note that the number and arrangement of the processing modules 60 are not limited to this embodiment and can be arbitrarily set.

[0022] The transfer module 50 as the first chamber is composed of a housing having a polygonal shape (a pentagonal shape in the illustrated example) inside, and is connected to the load lock modules 20 and 21 as described above. The transfer module 50 transfers the wafer W carried into the load lock module 20 to one processing module 60, performs a desired process, and then unloads it to the atmosphere section 10 via the load lock module 21.

[0023] The processing module 60 as the second chamber performs plasma processing for post-processing such as ashing processing. A module for performing a process according to the purpose of wafer processing can be arbitrarily selected for the processing module 60. Note that the internal configuration of the processing module 60 is not particularly limited, and it can be arbitrarily configured as long as it can perform the target plasma processing on the wafer W.

[0024] The processing module 60 also communicates with the transfer module 50 via the gate module 70. The gate module 70 is configured to connect the openings 51a and 61a (see FIGS. 2A and 2B), which serve as the transfer ports (the first substrate transfer port and the second substrate transfer port) of the wafer W formed on the respective wall surfaces of the transfer module 50 and the processing module 60, to each other, and functions as a substrate transfer path between the transfer module 50 and the processing module 60.

[0025] The gate module 70 as a connection member is provided to connect the internal space of the transfer module 50 (hereinafter sometimes referred to as the "transfer space S") and the internal space of the processing module 60 (hereinafter sometimes referred to as the "processing space P") via a gate valve 72 (see FIG. 2A) described later. The detailed configurations of the gate module 70 and the gate valve 72 will be described later.

[0026] Inside the transfer module 50, a wafer transfer mechanism 80 for transferring the wafer W is provided. The wafer transfer mechanism 80 includes a transfer arm 81 that holds and moves the wafer W, a turntable 82 that rotatably supports the transfer arm 81, and a rotary mounting table 83 on which the turntable 82 is mounted. Further, inside the transfer module 50, a guide rail 84 extending in the longitudinal direction of the transfer module 50 is provided. The rotary mounting table 83 is provided on the guide rail 84, and the wafer transfer mechanism 80 is configured to be movable along the guide rail 84.

[0027] In the transfer module 50, the wafer W held in the load lock module 20 is received by the transfer arm 81 and transferred to an arbitrary processing module 60. Further, the transfer arm 81 holds the wafer W on which a desired process has been performed in the processing module 60 and unloads it to the load lock module 21.

[0028] The above wafer processing apparatus 1 is provided with a control device 90. The control device 90 is, for example, a computer and has a program storage unit (not shown). A program for controlling wafer processing in the wafer processing apparatus 1 is stored in the program storage unit. Further, a program for controlling the operation of the drive system such as the above-described transfer module 50 and processing module 60 to realize wafer processing in the wafer processing apparatus 1 is also stored in the program storage unit. Note that the above program may be recorded on a computer-readable storage medium H and installed from the storage medium H to the control device 90.

[0029] As described above, various exemplary embodiments have been described. However, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and changes may be made. Further, it is possible to form other embodiments by combining elements in different embodiments.

[0030] <Wafer processing method> The wafer processing apparatus 1 according to the present embodiment is configured as described above. Next, wafer processing performed using the wafer processing apparatus 1 will be described.

[0031] First, a hoop 31 storing a plurality of wafers W is placed on a load port 32, and the wafer W is taken out from the hoop 31 by a wafer transfer mechanism 40. Next, the gate valve 22 of the load lock module 20 is opened, and the wafer W is carried into the load lock module 20 by the wafer transfer mechanism 40.

[0032] In the load lock module 20, after the gate valve 22 is closed and the inside of the load lock module 20 is sealed, the inside of the load lock module 20 is depressurized to a desired degree of vacuum. When the inside of the load lock module 20 is depressurized, next, the gate valve 23 is opened, and the inside of the load lock module 20 and the inside of the transfer module 50 are communicated with each other.

[0033] When the gate valve 23 is opened, the wafer W in the load lock module 20 is transported to the transfer module 50 by the wafer transfer mechanism 80, and the gate valve 23 is closed. Next, the gate valve 72 of one gate module 70 is opened, and the wafer W is carried into one processing module 60 by the wafer transfer mechanism 80. When the wafer W is carried into the processing module 60, the gate valve 72 is closed and the processing module 60 is sealed.

[0034] In the processing module 60, any plasma processing according to the purpose of wafer processing, for example, plasma processing for post-processing such as ashing processing, is performed. Specifically, for example, after the wafer W is carried in, the inside of the processing module 60 is decompressed to a desired degree of vacuum, and then a desired processing gas is supplied to the processing space P. Then, high-frequency power for plasma generation is supplied by a power supply unit (not shown) provided in the processing module 60 to excite the processing gas and generate plasma. And, by the action of the plasma thus generated, the desired plasma processing is performed on the wafer W.

[0035] When the desired plasma processing is performed on the wafer W, next, the gate valve 72 is opened, and the wafer W is carried out from the processing module 60 by the wafer transfer mechanism 80. When the wafer W is carried out from the processing module 60, the gate valve 72 is closed.

[0036] Next, the gate valve 23 of the load lock module 21 is opened, and the wafer W is carried into the load lock module 21 by the wafer transfer mechanism 80. In the load lock module 21, after the gate valve 23 is closed and the inside of the load lock module 21 is sealed, the inside of the load lock module 21 is opened to the atmosphere. When the inside of the load lock module 21 is opened to the atmosphere, next, the gate valve 22 is opened, and the inside of the load lock module 21 and the inside of the loader module 30 are communicated.

[0037] When the gate valve 22 is opened, the wafer W in the load lock module 21 is transported to the loader module 30 by the wafer transfer mechanism 40, and the gate valve 22 is closed. Thereafter, the wafer W is returned to and accommodated in the hoop 31 placed on the load port 32 by the wafer transfer mechanism 40. Thus, a series of wafer processing in the wafer processing apparatus 1 is completed.

[0038] <Gate module> In the above-described embodiment, when plasma processing related to post-processing such as ashing is performed in the processing module 60, the plasma processing may be performed in a high-temperature environment (for example, 100 ° C or higher), so there is a risk that the processing module 60 will become hot. At this time, for example, since the gate valve 72 is provided with electrical components (for example, an actuator and a positioning sensor) that are vulnerable to a high-temperature environment, it is required to prevent the electrical components from becoming hot.

[0039] As a method for preventing the electrical components from becoming hot, as described above, for example, the processing module 60 and the gate module 70 may be connected using a heat shield plate (for example, a resin material or the like) for suppressing heat transfer as an adapter. However, a high-strength heat shield plate (resin material) that can be suitably used as an adapter is vulnerable to radical consumption, that is, it is necessary to take measures against radicals for the heat shield plate.

[0040] Therefore, in the following description, the configuration of the gate module 70 according to the present embodiment, which thermally insulates between the processing module 60 and the gate module 70 with a heat insulating member and can appropriately protect the heat insulating member from radicals, will be described with reference to the drawings. FIG. 2A is a side cross-sectional view schematically showing the configuration of the gate module 70 according to the present embodiment. FIG. 2B is a front cross-sectional view of the A-A cross section shown in FIG. 2A observed from the transfer module 50 side described later.

[0041] As shown in FIG. 2A, the gate module 70 has a gate chamber 71 that interconnects a transfer chamber 51 defining a transfer space S in the transfer module 50 and a processing chamber 61 defining a processing space P in the processing module 60. Openings 71a and 71b are formed in the side wall surface of the gate chamber 71. The gate chamber 71 is arranged such that the transfer space S of the transfer module 50 and the processing space P of the processing module 60 communicate with each other through the openings 71a and 71b via the above-described openings 51a and 61a.

[0042] As shown in FIG. 2A, the opening 71a (opening 51a) of the gate chamber 71 is formed larger than the opening 71b (opening 61a), that is, the diameter on the processing module 60 side in a cross-sectional view is formed smaller than the diameter on the transfer module 50 side. In the following description, the portion radially outside the opening 71b in the gate chamber 71, in other words, the portion where the diameter of the gate chamber 71 is formed smaller may be referred to as a "step portion 71c".

[0043] A gate valve 72 is provided inside the gate module 70. The gate valve 72 includes a valve body 72a that opens and closes an opening 71b formed on the side surface of the gate chamber 71 on the processing module 60 side, a valve body moving portion 72b that moves the valve body 72a, and a positioning sensor (not shown) for confirming the position of the valve body 72a. The gate valve 72 is also provided with a sealing member 72c (e.g., an O-ring) for ensuring airtightness between the processing module 60 and the gate module 70.

[0044] The surface of the valve body 72a on the opening 71b side is a closing surface with a larger area than the opening 71b. When the valve body 72a closes the opening 71b, the closing surface covers the opening 71b and its periphery.

[0045] The valve body moving part 72b has a drive mechanism 72d, and moves the valve body 72a between a closed position where the opening 71b is closed and a retracted position where it has retracted from the opening 71b. The current position of the valve body 72a is detected by, for example, a positioning sensor (not shown). Note that the configuration of the drive mechanism 72d is not particularly limited, and for example, one or more mechanisms selected from an actuator, a link mechanism, a cam mechanism, an air cylinder, a motor, etc. can be used.

[0046] Also, in the gate module 70 according to the present embodiment, a heat insulation ring 73 for suppressing heat transfer between the transfer module 50 and the processing module 60, and a radical blocking ring 74 for preventing radical consumption of the heat insulation ring 73 are provided. The radical blocking ring 74 and the heat insulation ring 73 are provided in this order from the inner side (inside) of the gate chamber 71 along the opening 61a in a cross-sectional view as shown in Fig. 2B.

[0047] The heat insulation ring 73 as a heat insulation part is provided on the aforementioned stepped part 71c, and as shown in Fig. 3, connects the processing chamber 61 and the gate chamber 71 to prevent the processing chamber 61 and the gate chamber 71 from directly contacting each other. In other words, the processing chamber 61 and the gate chamber 71 are connected to each other via the heat insulation ring 73. The heat insulation ring 73 has a low thermal conductivity and is formed of an organic resin material, for example, enamel (PI, PEEK, PEI, POM, nylon, PBI, PC, PMMA, ABS, etc.), in order to thermally block the space between the processing chamber 61 and the gate chamber 71 and suppress heat transfer. Note that the thermal conductivity of the heat insulation ring 73 is preferably less than, for example, 0.4 W / m·K in order to appropriately suppress heat transfer between the processing chamber 61 and the gate chamber 71. Also, sealing members 73a (for example, O-rings) are provided between the heat insulation ring 73 and the processing chamber 61 and the gate chamber 71, respectively.

[0048] Note that the shape and size of the heat shield ring 73 are not particularly limited as long as the processing chamber 61 and the gate chamber 71 can be connected without direct contact. However, from the perspective of suppressing the influence of radiant heat between the processing chamber 61 and the gate chamber 71, it is preferable to cover the opposing wall surfaces of the processing chamber 61 and the gate chamber 71 with the largest possible area. In other words, it is preferable to enlarge the heat shield ring 73 and reduce the exposed portions of the opposing wall surfaces of the processing chamber 61 and the gate chamber 71.

[0049] Note that the thickness of the heat shield ring 73 provided between the processing chamber 61 and the gate chamber 71 is desirably 10 mm or more in view of ensuring heat insulation between the chambers and the strength of the heat shield ring 73. If the thickness of the heat shield ring 73 is less than 10 mm, there is a risk that heat transfer between the processing chamber 61 and the gate chamber 71 cannot be appropriately suppressed.

[0050] Note that a processing treatment (such as embossing or coating) for reducing the amount of heat conduction between the heat shield ring 73 and the processing chamber 61 and the gate chamber 71 may be performed on the surface of the heat shield ring 73. However, if the surface pressure of the contact surface between the heat shield ring 73 and the processing chamber 61 and the gate chamber 71 rises too much, a gap may occur between the heat shield ring 73 and the sealing member 73a due to deformation of the heat shield ring 73 caused by creep, resulting in a decrease in airtightness. Therefore, it is necessary to control the processing level so that the total contact area between the heat shield ring 73 and the processing chamber 61 and the gate chamber 71 does not become too small (so that the surface pressure does not rise too much).

[0051] The protective member and the radical blocking ring 74 as a radical blocking part are provided inside the heat insulating ring 73 along the opening 71b to prevent radicals from acting on the heat insulating ring 73. Specifically, as shown in FIG. 3, the radical blocking ring 74 is provided so as to close the clearance part C formed to prevent heat transfer between the processing chamber 61 and the gate chamber 71 inside (on the side of the opening 71b) of the heat insulating ring 73 (step part 71c). The radical blocking ring 74 is made of a material having radical resistance and capable of blocking the passage of radicals (hereinafter sometimes referred to as "radical-resistant material") in order to appropriately prevent the action of radicals on the heat insulating ring 73. For example, it is formed of a composite material in which a fluororubber ring is covered with a resin (for example, Teflon (registered trademark)) tube.

[0052] Note that the material forming the radical blocking ring 74 is not limited to the above composite material and can be arbitrarily determined as long as it can prevent the action of radicals on the heat insulating ring 73. That is, for example, it can be arbitrarily changed according to the concentration level of radicals generated inside the processing chamber 61, and instead of the above composite material, a perfluoroelastomer (FFKM) with high radical resistance or a Teflon (registered trademark) packing may be used.

[0053] Note that the dimension of the clearance part C where the radical blocking ring 74 is provided (the distance between the wall surfaces of the opposing processing chamber 61 and gate chamber 71) is preferably 0.2 mm or more in order to suppress the temperature rise of the gate chamber 71 due to radiant heat and to suppress the contact between the processing chamber 61 and the gate chamber 71 due to the strain accompanying the secular deterioration of the heat insulating ring 73.

[0054] <The effects of the gate module according to the present embodiment> The gate module 70 is configured as described above. According to the wafer processing apparatus 1 according to this embodiment, by connecting the processing chamber 61 and the gate chamber 71 via the heat insulating ring 73 in this way, heat transfer from the processing chamber 61 heated by plasma processing to the gate chamber 71 (more specifically, the gate valve 72) is suppressed. Thereby, it is possible to suppress the temperature rise of the electrical components that are vulnerable to the high-temperature environment provided in the gate valve 72, that is, it is possible to appropriately suppress the damage of the electrical components during plasma processing.

[0055] In other words, since heat transfer between the processing chamber 61 and the gate chamber 71 can be suppressed in this way, even when plasma processing is performed in a high-temperature environment inside the processing module 60, a conventional gate valve 72 for a low-temperature range (for example, 80 ° C or lower) can be applied to close the opening 71b (opening 61a).

[0056] Also, this naturally suppresses heat transfer from the processing chamber 61 (gate chamber 71) to the transfer chamber 51, so that the temperature rise of the transfer chamber 51 can be prevented. As a result, the temperature rise of electrical components (for example, a positioning sensor for the wafer W provided in the wafer transfer mechanism 80) that are vulnerable to the high-temperature environment provided inside the transfer chamber 51 is suppressed, and damage to the electrical components can be appropriately suppressed.

[0057] Further, by providing a radical blocking ring 74 made of a material having radical resistance and capable of blocking the passage of radicals inside (on the processing space P side) of the heat insulating ring 73, the passage of radicals to the outside (external space side) of the radical blocking ring 74 can be prevented. Thereby, the intrusion of radicals into the heat insulating ring 73 is suppressed, and the radical consumption of the heat insulating ring 73 during plasma processing can be appropriately prevented.

[0058] Also, according to the present embodiment, the dimension of the clearance portion C between the processing chamber 61 provided with the radical blocking ring 74 and the gate chamber 71 is designed to suppress the heating of the gate chamber 71 due to heat radiation and to prevent the processing chamber 61 and the gate chamber 71 from coming into contact with each other due to the distortion of the heat insulating ring 73 (for example, 0.2 mm or more). Thereby, heat transfer between the processing chamber 61 and the gate chamber 71 can be more appropriately suppressed, and the temperature rise of electrical components vulnerable to a high-temperature environment can be more appropriately suppressed.

[0059] In the above embodiment, the case where the radical consumption of the heat insulating ring 73 is prevented by providing the radical blocking ring 74 has been described as an example. However, the structure of the radical blocking portion for suppressing the action of radicals on the heat insulating ring 73 is not limited to this.

[0060] Specifically, for example, as shown in FIG. 4, a radical blocking layer 740 as a radical blocking portion formed of a radical-resistant material may be formed on the surface of the heat insulating ring 73. The radical blocking layer 740 may be formed, for example, by attaching a radical-resistant material to the surface (at least the inner peripheral surface) of the heat insulating ring 73, or may be formed, for example, by coating a radical-resistant material on the surface (at least the inner peripheral surface) of the heat insulating ring 73. By forming the radical blocking layer 740 on the surface of the heat insulating ring 73 in this way, the intrusion of radicals into the heat insulating ring 73 can be suppressed as in the above embodiment, and the radical consumption of the heat insulating ring 73 during plasma processing can be prevented.

[0061] In the case of forming the radical blocking layer 740 in this way, the radical blocking layer 740 is preferably formed on the surface of the heat insulating ring 73 at least up to the installation position of the sealing member 73a in order to suppress the consumption of the sealing member 73a caused by radicals.

[0062] The radical blocking portion may also have a labyrinth structure L for reducing the amount of radicals reaching the heat insulating ring 73 by deactivating the radicals. Specifically, as shown in FIGS. 5A and 5B, for example, convex portions protruding in the outer circumferential direction are formed on the side wall surfaces of the processing chamber 61 and the gate chamber 71, respectively, and these convex portions are arranged non-contact with each other inside the heat insulating ring 73. In other words, an annular gap forming a labyrinth structure L having at least one folded-back portion is formed between the transfer chamber 50 and the gate module 70. Thereby, a radical flow path refracted inside the heat insulating ring 73 is formed, and the amount of radicals reaching the heat insulating ring 73 can be reduced by deactivating the radicals, suppressing the consumption of the heat insulating ring 73.

[0063] Note that the radical blocking portion may have a plurality of structures arbitrarily selected from the above radical blocking ring 74, radical blocking layer 740, and labyrinth structure L.

[0064] Specifically, for example, as shown in FIG. 6A, an annular gap forming a labyrinth structure L having at least one folded-back portion is formed between the transfer chamber 50 and the gate module 70 inside the heat insulating ring 73, and a radical blocking ring 74 as a second blocking layer may be further provided at the outlet of the labyrinth structure L on the side of the heat insulating ring 73. Thereby, the amount of radicals reaching the radical blocking ring 74 is reduced, and the intrusion of radicals into the heat insulating ring 73 can be more appropriately prevented.

[0065] Also, for example, as shown in FIG. 6B, a radical blocking layer 740 as a second blocking layer may be formed on the surface of the heat insulating ring 73, and a radical blocking ring 74 as a first blocking layer may be further provided inside the heat insulating ring 73.

[0066] In the above embodiments, the case where the transfer module 50 and the processing module 60 are connected via the gate module 70 as a connection member has been described as an example. However, the position where the connection member according to the technology of the present disclosure is applied is not limited to this. Specifically, for example, even when connecting one processing module 60 as a first substrate processing chamber that performs plasma processing in a high-temperature environment and another processing module 60 as a second substrate processing chamber that performs plasma processing in a low-temperature environment, the technology according to the present disclosure can be applied. In such a case, the gate module 70 may be omitted as the configuration of the connection member.

[0067] FIG. 7 is a cross-sectional view schematically showing an outline of the configuration of a connection member according to a second embodiment in a case where it is not necessary to block radicals between connected chambers, that is, when it is not necessary to provide the gate module 70 (gate valve 72). As shown in FIG. 7, in the second embodiment, only the heat insulation ring 73 and the radical blocking ring 74 are provided between the processing chamber 61 of one processing module 60 and the processing chamber 61 of another processing module 60. In other words, in the present embodiment, these heat insulation ring 73 and radical blocking ring 74 constitute the "connection member" according to the present invention.

[0068] According to the above second embodiment, by connecting between one processing module 60 and another processing module 60 via the heat insulation ring 73, heat transfer between the one processing module 60 and the other processing module 60 can be suppressed. Thereby, for example, even when the processing temperatures of the wafers W in one processing module 60 and another processing module 60 are different, the temperatures of the respective processing chambers 61 can be independently maintained, and wafer processing can be appropriately executed in each processing chamber 61.

[0069] In addition, since the radical blocking ring 74 is provided inside the heat insulation ring 73 that connects between the respective processing chambers 61, it is possible to appropriately prevent the heat insulation ring 73 from being consumed by radicals generated in the plasma processing performed in each processing module 60.

[0070] In addition, in the above-described second embodiment, the case where the first substrate processing chamber and the second substrate processing chamber are each the processing module 60 has been described as an example. However, naturally, the present embodiment can also be applied even when either one of them is the transfer module 50.

[0071] In addition, in the above-described first and second embodiments, as described above, when plasma processing such as ashing processing is performed inside one processing module 60, in other words, when protecting the heat shield ring 73 from radicals, an example has been described. However, as described above, for example, even when wafer processing using a corrosive gas is performed inside one processing module 60 in a high-temperature environment, the technology according to the present disclosure can be applied. Examples of wafer processing using a corrosive gas include plasma processing such as etching processing and ashing processing, and any other gas processing other than plasma processing.

[0072] Specifically, for example, instead of or in addition to the radical blocking ring 74 shown in FIG. 2, a corrosive gas protection ring (not shown) as a corrosive gas blocking portion is provided inside the heat shield ring 73 along the opening 71b, thereby preventing the heat shield ring 73 from being consumed by the corrosive gas. In such a case, the corrosive gas protection ring functions as a "protection member" according to the technology of the present disclosure.

[0073] Note that the corrosive gas protection ring can be configured by selecting an arbitrary material according to the type of corrosive gas supplied inside one processing module 60. For example, silicone rubber or Viton can be selected as the constituent material.

[0074] Also, for example, the corrosive gas protection ring may be made of a material having radical resistance similar to that of the radical blocking ring 74, that is, a polymer resin (for example, Teflon (registered trademark)) polymer. When configured with the same material as the radical blocking ring 74 in this way, the heat shield ring 73 can be protected from both radicals and corrosive gases.

[0075] Incidentally, for example, as shown in FIG. 6, when a first blocking layer and a second blocking layer are provided as protective members inside the heat insulating ring 73, the first blocking layer and the second blocking layer may share functions as a radical blocking layer and a corrosive gas blocking layer, respectively.

[0076] Thus, in the technology according to the present disclosure, even when corrosive gas treatment in a high-temperature environment is performed on the wafer W inside one processing module 60, heat transfer from the processing chamber 61 to the gate chamber 71 can be appropriately suppressed, and consumption of the heat insulating ring 73 due to the corrosive gas treatment can be suppressed.

[0077] Incidentally, in the above embodiment, the case where the wafer processing apparatus 1 is a decompression processing apparatus, that is, the case where plasma processing on the wafer W is performed in a decompressed atmosphere in the processing module 60 has been described as an example. However, the wafer processing apparatus 1 may be an atmospheric processing apparatus. That is, the technology according to the present embodiment can be applied even when plasma processing on the wafer W is performed in an atmospheric pressure atmosphere in the processing module 60.

[0078] The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

Explanation of Reference Numerals

[0079] 1 Wafer processing apparatus 50 Transfer module 60 Processing module 61a Opening 70 Gate module 71b Opening 73 Heat insulating ring 74 Radical blocking ring W Wafer

Claims

1. A first chamber having a first substrate transfer port, A second chamber having a second substrate transfer port and configured to perform substrate processing, A connecting member that interconnects the first substrate transfer port and the second substrate transfer port and has a gate valve disposed therein, A heat insulation portion provided along the second substrate transfer port in a cross-sectional view and configured to thermally isolate between the first chamber and the second chamber, A protective member provided between the heat insulation portion and the second substrate transfer port and configured to prevent consumption of the heat insulation portion during substrate processing in the second chamber, A substrate processing system.

2. The substrate processing is plasma processing, The protective member is, Interposed between the second chamber and the connecting member, The substrate processing system according to claim 1, configured to prevent intrusion of radicals into the heat insulation portion.

3. The protective member has radical resistance and is formed in an annular shape along the second substrate transfer port in a cross-sectional view, the substrate processing system according to claim 2.

4. The protective member includes a fluororubber ring and a resin tube covering around the fluororubber ring, the substrate processing system according to claim 3.

5. The protective member is a coating layer having radical resistance and covering the surface of the heat insulation portion, the substrate processing system according to claim 1 or 2.

6. The substrate processing is gas processing using a corrosive gas, The protective member is configured to prevent consumption of the heat insulation portion by the corrosive gas, the substrate processing system according to claim 1.

7. The protective member is formed of at least any one of silicone rubber, Viton, or a polymer resin polymer, the substrate processing system according to claim 6.

8. The protective member is disposed to close a gap between the first chamber and the second chamber, the substrate processing system according to any one of claims 1 to 7.

9. The gap is 0.2 mm or more, the substrate processing system according to claim 8.

10. The heat insulation portion is formed of a resin material selected from at least any one of PI, PEEK, PEI, POM, nylon, PBI, PC, PMMA, or ABS, the substrate processing system according to any one of claims 1 to 9.

11. The substrate processing system according to claim 10, wherein the resin material has a thermal conductivity of less than 0.4 W / m·K.

12. The substrate processing system according to any one of claims 1 to 11, wherein the heat insulating portion has a thickness of 10 mm or more.

13. A first chamber having a first opening; A second chamber having a second opening; A connecting member extending from the first chamber toward the second chamber, communicating the first opening and the second opening, and having a gate valve disposed therein; A first annular member sandwiched between the second chamber and the connecting member and formed of an organic resin material having a thermal conductivity of less than 0.4 W / m·K; A substrate processing system comprising: a second annular member sandwiched between the second chamber and the connecting member inside the first annular member and containing a radical-resistant material or a corrosion-resistant material.

14. The substrate processing system according to claim 13, wherein the second annular member includes a main body formed of a fluororubber material and the radical-resistant material covering the main body.

15. The substrate processing system according to claim 13 or 14, wherein the radical-resistant material is disposed on an inner peripheral surface of the first annular member.

16. The substrate processing system according to any one of claims 13 to 15, wherein the radical-resistant material is selected from the group consisting of perfluoroelastomer (FFKM), Teflon, and combinations thereof.

17. The substrate processing system according to claim 13, wherein the corrosion-resistant material is selected from the group consisting of silicone rubber, Viton, polymer resin polymers, and combinations thereof.

18. The substrate processing system according to any one of claims 13 to 17, wherein the organic resin material is selected from the group consisting of PI, PEEK, PEI, POM, nylon, PBI, PC, PMMA, ABS, and combinations thereof.

19. A first chamber having a first opening; A second chamber having a second opening; A connecting member extending from the first chamber toward the second chamber and communicating the first opening and the second opening, an annular gap being formed between the second chamber and the connecting member, the annular gap being defined by a labyrinth structure having at least one folded-back portion. An annular member that is sandwiched between the second chamber and the connection member outside the annular gap and is formed of an organic resin material having a thermal conductivity of less than 0.4 W / m·K, and a substrate processing system comprising the same.

20. The substrate processing system according to claim 19, further comprising an additional annular member disposed within the annular gap and including a radical-resistant material or a corrosion-resistant material.

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