Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus that can process various processing gases when processing substrates with processing gases.SOLUTION: A substrate processing apparatus for processing substrates, comprises an inner chamber that accommodates the substrate, an outer chamber provided outside the inner chamber, and a processing gas supply unit that supplies the processing gas to the interior of the inner chamber, the inner chamber is designed to be detachable from the outer chamber, and the outer chamber is not in contact with the processing gas supplied to the inner chamber.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that houses and processes a substrate in a chamber. The chamber is usually formed of Al (aluminum), and the inner surface of the chamber is subjected to a surface oxidation treatment. Further, when hydrogen fluoride gas is supplied into the chamber, a part or all of the inner surface of the chamber is formed of Al or an Al alloy that has not been subjected to a surface oxidation treatment.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure provides a substrate processing apparatus and a substrate processing method that can cope with various processing gases when processing a substrate using a processing gas.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, including an inner chamber that houses the substrate, an outer chamber provided outside the inner chamber, and a processing gas supply unit that supplies a processing gas into the inner chamber. The inner chamber is configured to be detachable from the outer chamber, and the outer chamber is provided so as not to contact the processing gas supplied into the inner chamber.

Effects of the Invention

[0006] According to this disclosure, when processing a substrate using a processing gas, it is possible to provide a substrate processing apparatus and a substrate processing method that can handle various processing gases. [Brief explanation of the drawing]

[0007] [Figure 1] This is a longitudinal cross-sectional view showing the schematic configuration of a wafer processing apparatus. [Figure 2] This is a longitudinal cross-sectional view showing the schematic configuration of a wafer processing apparatus. [Figure 3] This is an explanatory diagram showing the gas system in a wafer processing device. [Figure 4] This is a longitudinal cross-sectional view showing a schematic of the chamber and its surrounding structure. [Figure 5] This is a perspective view showing the general configuration of the chamber. [Figure 6] This is a perspective view showing the general configuration of the chamber. [Figure 7] This is a perspective view showing a schematic configuration of the inner chamber. [Figure 8] This is a plan view showing a schematic configuration of the inner chamber. [Figure 9] This is a perspective view showing a schematic configuration of the outer chamber. [Figure 10] This is a plan view showing a schematic configuration of the outer chamber. [Figure 11] This is an explanatory diagram showing the sealing structure of the sealed space at the inlet / outlet of the inner chamber. [Figure 12] This is an explanatory diagram showing the sealing structure of the sealed space at the inlet / outlet of the inner chamber. [Figure 13] This is an explanatory diagram showing the sealing structure of the sealed space at the inlet / outlet of the inner chamber. [Figure 14] This is a longitudinal cross-sectional view showing a schematic representation of the flange portion of the inner chamber and a portion of the side wall structure of the outer chamber. [Modes for carrying out the invention]

[0008] In the semiconductor device manufacturing process, various processes such as etching are performed on semiconductor wafers (substrates; hereinafter referred to as "wafers") using a processing gas, for example, under a vacuum atmosphere (reduced pressure atmosphere).

[0009] Etching has traditionally been performed using various methods. In particular, with the miniaturization of semiconductor devices in recent years, a method called chemical oxide removal (COR), which enables more precise etching, is being used as an alternative to conventional etching techniques such as plasma etching and wet etching.

[0010] COR processing is a process in which a processing gas is supplied to a wafer in a chamber maintained in a vacuum atmosphere, and these gases react with, for example, a film formed on the wafer to generate a product. The product generated on the wafer surface by COR processing is sublimated by a heat treatment in the next step, thereby removing the film on the wafer surface.

[0011] In COR processing, the frequency of using highly corrosive processing gases is increasing. In substrate processing equipment (wafer processing equipment), the inner surface of the chamber needs to be treated to provide corrosion resistance to the processing gas. Furthermore, different treatments may be required on the inner surface of the chamber to accommodate various processing gases. For example, in the substrate processing equipment (COR processing equipment) disclosed in Patent Document 1, the inner surface of the chamber is usually subjected to surface oxidation treatment. However, when using hydrogen fluoride gas, the inner surface of the chamber is formed of Al or an Al alloy that has not been subjected to surface oxidation treatment.

[0012] However, in conventional substrate processing equipment disclosed in, for example, Patent Document 1, there is only one chamber, so the chamber must be replaced every time the processing gas is changed. This chamber replacement is a very burdensome operation, involving the complete shutdown of the system on which the substrate processing equipment is installed, the undocking of the substrate processing equipment, and the rewiring of gas supply lines, power supply lines, water supply lines, etc. Therefore, there is room for improvement in conventional substrate processing equipment, especially in the chamber configuration.

[0013] The technology according to the present disclosure provides a substrate processing apparatus and a substrate processing method capable of corresponding to various processing gases when processing a substrate using a processing gas. Hereinafter, a wafer processing apparatus as the substrate processing apparatus according to the present embodiment and a wafer processing method as the substrate processing method will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions are omitted.

[0014] <Configuration of Wafer Processing Apparatus> First, the configuration of the wafer processing apparatus according to the present embodiment will be described. FIGS. 1 and 2 are longitudinal sectional views respectively showing the outline of the configuration of the wafer processing apparatus 1. In the present embodiment, the case where the wafer processing apparatus 1 is a COR processing apparatus that performs COR processing on the wafer W will be described as an example.

[0015] In the present embodiment, as will be described later, the chamber 10 has a double structure, and thus the wafer processing apparatus 1 capable of corresponding to various processing gases is realized. Therefore, other structures of the wafer processing apparatus 1 can be arbitrarily designed. For example, as shown in FIG. 1, one mounting table 20 for the wafer W to be described later may be provided, or as shown in FIG. 2, two mounting tables 20 may be provided. Further, in the wafer processing apparatus 1 shown in FIG. 1, the partition wall 40, the inner wall 50, and the lifting mechanism 70 to be described later in the wafer processing apparatus 1 shown in FIG. 2 are omitted. Hereinafter, the configuration of the wafer processing apparatus 1 shown in FIG. 2 will be described, but the reference numerals of the constituent members of the wafer processing apparatus 1 shown in FIG. 2 correspond to the reference numerals of the constituent members of the wafer processing apparatus 1 shown in FIG. 1.

[0016] As shown in Figure 2, the wafer processing apparatus 1 has a chamber 10. The chamber 10 has a double structure and comprises an inner chamber 11 and an outer chamber 12. A sealed space T (hereinafter referred to as "sealed space T") is formed between the inner chamber 11 and the outer chamber 12. A heater ring 13 for heating the inner chamber 11 is provided on the upper surface of the inner chamber 11. Furthermore, a lid 14 is provided on the upper surface of the heater ring 13 that airtightly covers the upper surface of the heater ring 13 and seals the inside of the inner chamber 11. The outer chamber 12 is provided with an outer heater (not shown) for heating the outer chamber 12. The outer heater can be provided at any position. The detailed configuration of this chamber 10 and its surroundings will be described later.

[0017] The outer chamber 12 is provided with a gas supply pipe 15 for supplying inert gas to the sealed space T, and an intake pipe 16 for evacuating the sealed space T. These gas supply pipe 15 and intake pipe 16 are each installed at any location in the outer chamber 12, for example, on the bottom plate. Details of the supply system for supplying inert gas to the sealed space T via the gas supply pipe 15 and the depressurization system (exhaust system) for evacuating the sealed space T via the intake pipe 16 will be described later.

[0018] Inside the inner chamber 11, there are multiple mounting tables 20, 20 for placing wafers W, in this embodiment two such tables. Each mounting table 20 is formed in a substantially cylindrical shape and has an upper table 21 with a mounting surface for placing wafers W, and a lower table 22 fixed to the bottom plate of the outer chamber 12 and supporting the upper table 21. The upper table 21 incorporates a temperature control mechanism 23 for adjusting the temperature of the wafers W. The temperature control mechanism 23 adjusts the temperature of the mounting table 20 by circulating a refrigerant such as water, thereby controlling the temperature of the wafers W on the mounting table 20.

[0019] In this embodiment, the mounting platform 20 is fixed, but it may be configured to be raised and lowered by a lifting mechanism (not shown).

[0020] A support pin unit (not shown) is provided at a position below the mounting platform 20 on the bottom plate of the outer chamber 12. This support pin unit drives a support pin (not shown) up and down, and the wafer W is configured to be transferable between the support pin and a transfer mechanism (not shown) provided outside the wafer processing apparatus 1.

[0021] A shower head 30 is provided on the lower surface of the lid 14 to supply processing gas into the inner chamber 11. The shower heads 30 are individually provided above the mounting bases 20, 20.

[0022] The shower head 30 includes, for example, a substantially cylindrical frame 31 with an open bottom supported on the bottom surface of the lid 14, and a substantially disc-shaped shower plate 32 fitted into the inner surface of the frame 31. The shower plate 32 is provided at a desired distance from the top of the frame 31. This creates a space 30a between the top of the frame 31 and the top surface of the shower plate 32. The shower plate 32 is also provided with multiple openings 32a that penetrate through the shower plate 32 in the thickness direction. A gas supply pipe 33 is connected to the space 30a between the top of the frame 31 and the shower plate 32. Details of the air supply system that supplies processing gas to the inside of the inner chamber 11 via the shower head 30 and the gas supply pipe 33 will be described later.

[0023] A partition wall 40, which is configured to be vertically movable, is provided on the outer circumference of the mounting bases 20, 20. The partition wall 40 has two cylindrical parts 41, 41 that individually surround the two mounting bases 20, 20, upper flange parts 42, 42 provided at the upper ends of the cylindrical parts 41, 41, and lower flange parts 43, 43 provided at the lower ends of the cylindrical parts 41, 41. The inner diameter of the cylindrical part 41 is set to be larger than the outer surface of the mounting base 20, so that a gap is formed between the cylindrical part 41 and the mounting base 20.

[0024] Furthermore, a heater (not shown) is provided in the partition wall 40 and it is heated to a desired temperature. This heating prevents foreign matter contained in the processing gas from adhering to the partition wall 40.

[0025] On the upper surface of the upper flange portion 42, a sealing member 44, such as a resin O-ring, is provided corresponding to each mounting base 20. This sealing member 44 ensures airtight sealing between the upper flange portion 42 and the frame 31 when the partition wall 40 is raised by the lifting mechanism 70 (described later) and the upper flange portion 42 comes into contact with the frame 31. Similarly, on the protruding portion 52 of the inner wall 50 (described later), a sealing member 45, such as a resin O-ring, is provided corresponding to each mounting base 20. This sealing member 45 ensures airtight sealing between the protruding portion 52 and the lower flange portion 43 when the protruding portion 52 comes into contact with the lower flange portion 43. By raising the partition wall 40, the frame 31 and the sealing member 44 come into contact, and then the lower flange portion 43 and the sealing member 45 come into contact, a processing space S enclosed by the mounting base 20, the partition wall 40, and the shower head 30 is formed.

[0026] Inner walls 50, 50 are provided on the outer circumference of the mounting tables 20, 20, fixed to the bottom plate of the outer chamber 12. Each inner wall 50 has a substantially cylindrical main body 51 and a projection 52 provided at the upper end of the main body 51 that protrudes outward from the inner wall 50. The inner walls 50, 50 are arranged to individually surround the lower bases 22, 22 of the mounting tables 20, 20. The inner diameter of the main body 51 of the inner wall 50 is set to be larger than the outer diameter of the lower base 22, and exhaust spaces V are formed between the inner wall 50 and the lower base 22. In this embodiment, the exhaust space V also includes the space between the partition wall 40 and the upper base 21. As shown in Figure 2, the height of the inner wall 50 is set so that when the partition wall 40 is raised to the wafer processing position by the lifting mechanism 70 (described later), the sealing member 45 and the projection 52 of the inner wall 50 come into contact. This ensures that the inner wall 50 and the bulkhead 40 are in airtight contact.

[0027] Multiple slits 53 are formed at the lower end of the inner wall 50. The slits 53 are exhaust ports through which the processed gas is discharged. In this embodiment, the slits 53 are formed at approximately equal intervals along the circumferential direction of the inner wall 50.

[0028] The inner wall 50 is fixed to the bottom plate of the outer chamber 12. As described above, the outer chamber 12 is configured to be heated by an outer heater (not shown), and the inner wall 50 is also heated by this outer heater. The inner wall 50 is heated to a desired temperature, preventing foreign matter contained in the processing gas from adhering to the inner wall 50.

[0029] The outer chamber 12 is provided with an exhaust pipe 60 that exhausts the inside of the inner chamber 11. The exhaust pipe 60 is located on the bottom plate of the outer chamber 12, outside the partition wall 40 and the inner wall 50. The exhaust pipe 60 is common to both inner walls 50, 50. That is, the processed gas from the two exhaust spaces V, V is discharged through the common exhaust pipe 60. Details of the exhaust system that exhausts the inside of the inner chamber 11 via the exhaust pipe 60 will be described later.

[0030] As described above, the wafer processing apparatus 1 has a lifting mechanism 70 for raising and lowering the partition wall 40. The lifting mechanism 70 has an actuator 71 located outside the chamber 10, a drive shaft 72 connected to the actuator 71 that penetrates the bottom plates of the inner chamber 11 and the outer chamber 12 and extends vertically upward inside the inner chamber 11, and a plurality of guide shafts 73, one end of which is connected to the partition wall 40 and the other end of which extends to the outside of the outer chamber 12. The guide shafts 73 prevent the partition wall 40 from tilting when the partition wall 40 is raised and lowered by the drive shaft 72.

[0031] The lower end of a retractable bellows 74 is airtightly connected to the drive shaft 72. The upper end of the bellows 74 is airtightly connected to the underside of the bottom plate of the outer chamber 12. Therefore, when the drive shaft 72 moves up and down, the bellows 74 expands and contracts vertically, maintaining airtightness inside the chamber 10. A sleeve (not shown), for example, fixed to the bottom plate of the outer chamber 12, is provided between the drive shaft 72 and the bellows 74 to function as a guide during the up and down movement.

[0032] A bellows 75, which is extendable and retractable, is connected to the guide shaft 73, similar to the drive shaft 72. The upper end of the bellows 75 is airtightly connected to both the bottom plate and the side wall of the outer chamber 12, spanning across both. Therefore, when the guide shaft 73 moves up and down in conjunction with the raising and lowering movement of the partition wall 40 by the drive shaft 72, the bellows 75 extends and retracts vertically, thereby maintaining airtightness inside the chamber 10. In addition, a sleeve (not shown) that functions as a guide during the raising and lowering movement is provided between the guide shaft 73 and the bellows 75, similar to the case of the drive shaft 72.

[0033] The wafer processing apparatus 1 described above is provided with a control unit 80. The control unit 80 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of wafer W in the wafer processing apparatus 1. The program may have been recorded on a computer-readable storage medium (not shown) and installed from that storage medium to the control unit 80. Furthermore, the storage medium may be temporary or permanent.

[0034] <Gas System Configuration> Next, the gas system in the wafer processing apparatus 1 described above will be explained. Figure 3 is an explanatory diagram showing the gas system in the wafer processing apparatus 1. In this embodiment, the wafer processing apparatus 1 has a gas system (air supply and exhaust) for the inside of the inner chamber 11 and a gas system (air supply and depressurization) for the sealed space T between the inner chamber 11 and the outer chamber 12.

[0035] As shown in Figure 3, the processing gas supply unit 100, which supplies processing gas into the inner chamber 11, has the shower head 30 and gas supply pipe 33 described above. The gas supply pipe 33 is connected to a processing gas supply source 101 that is configured to supply processing gas. The processing gas is selected according to the film to be etched. The gas supply pipe 33 is also provided with a flow rate adjustment mechanism 102 that adjusts the amount of processing gas supplied, and is configured to individually control the amount of processing gas supplied to each wafer W. In the processing gas supply unit 100, the processing gas supplied from the processing gas supply source 101 is supplied to the wafers W placed on each mounting stage 20 via the gas supply pipe 33 and shower head 30.

[0036] The inert gas supply unit 110, which supplies inert gas to a sealed space T, has the gas supply pipe 15 described above. The gas supply pipe 15 is connected to an inert gas supply source 111 that is configured to supply inert gas. Examples of inert gases used include nitrogen gas, argon gas, and helium gas. The gas supply pipe 15 is also provided with a flow rate adjustment mechanism 112 for adjusting the amount of inert gas supplied, and is configured to control the amount of inert gas supplied to the sealed space T. In the inert gas supply unit 110, the inert gas supplied from the inert gas supply source 111 is supplied to the sealed space T via the gas supply pipe 15.

[0037] The exhaust section 120, which exhausts the inside of the inner chamber 11, has the exhaust pipe 60 described above. The exhaust pipe 60 is equipped with a pressure regulating valve 121, a turbomolecular pump 122 and a valve 123, and a dry pump 124 is further connected to it. In the exhaust section 120, the dry pump 124 exhausts the internal pressure of the inner chamber 11 to a medium vacuum, and the turbomolecular pump 122 exhausts the internal pressure of the inner chamber 11 to a high vacuum.

[0038] The vacuum reduction unit 130, which evacuates the sealed space T, has the intake pipe 16 described above. A valve 131 is provided on the intake pipe 16, and a dry pump 124 is further connected to it. The vacuum reduction unit 130 then uses the dry pump 124 to evacuate the sealed space T, reducing the vacuum level of the sealed space T to a desired degree. By reducing the vacuum level of the sealed space T to a desired degree in this way, the sealed space T can function as a vacuum insulation layer between the inner chamber 11 and the outer chamber 12, as will be described later.

[0039] In this embodiment, the dry pump 124 is provided in common to both the exhaust section 120 and the pressure reducing section 130. However, since the exhaust section 120 is equipped with a valve 123 and the pressure reducing section 130 is equipped with a valve 131, the exhaust of the inside of the inner chamber 11 by the exhaust section 120 and the pressure reduction of the sealed space T by the pressure reducing section 130 can be controlled individually.

[0040] <Chamber Configuration> Next, the configuration of the chamber 10 and its surroundings will be described. Figures 4 to 10 are longitudinal cross-sectional views showing a schematic of the configuration of the chamber 10 and its surroundings. Note that in Figures 4 to 10, the internal configuration of the inner chamber 11 is omitted to facilitate the explanation of the configuration of the chamber 10.

[0041] [Configuration of inner and outer chambers] As shown in Figures 4 to 6, the chamber 10 has a double structure and comprises an inner chamber 11 and an outer chamber 12. The inner chamber 11 is configured to be detachably attached to the outer chamber 12. Specifically, the inner chamber 11 can be attached to and detached from the upper part of the outer chamber 12. When the inner chamber 11 is attached to the outer chamber 12, a sealed space T is formed between the inner chamber 11 and the outer chamber 12. Furthermore, the outer chamber 12 is provided so as not to be exposed to the inside of the inner chamber 11 and so as not to come into contact with the processing gas supplied to the inside of the inner chamber 11.

[0042] The inner chamber 11 shown in Figures 7 and 8 is made of a metal such as aluminum or stainless steel. The inner surface of the inner chamber 11, that is, the gas contact surface that comes into contact with the processing gas inside the inner chamber 11, is coated with a coating that is corrosion-resistant to the processing gas. This coating is determined according to the type of processing gas, but is, for example, nickel plating.

[0043] The inner chamber 11 is a container with a roughly rectangular parallelepiped shape, with an open top surface. The inner chamber 11 has a roughly cylindrical side wall 200, a flange portion 201 that protrudes outward from the upper end of the side wall 200, and a bottom plate 202 provided at the lower end of the side wall 200 so as to cover the lower surface of the opening.

[0044] A wafer loading / unloading port 210 is formed on one side of the side wall 200. Multiple ports, for example three, are formed on the other side of the side wall 200. These ports 211 are, for example, for connecting internal components of the inner chamber 11 to external equipment.

[0045] The flange portion 201 is provided in an annular shape above the side wall 220 of the outer chamber 12, which will be described later. The outer surface of the flange portion 201 is exposed to the outside of the wafer processing apparatus 1.

[0046] Multiple openings 212 to 215 are formed in the base plate 202. Opening 212 is for installing the mounting base 20 and the inner wall 50, and is formed in two locations in the base plate 202. Opening 213 is for inserting the exhaust pipe 60. Opening 214 is for inserting the drive shaft 72. Opening 215 is for inserting the guide shaft 73, and is formed in two locations in the base plate 202.

[0047] The outer chamber 12 shown in Figures 9 and 10 is made of a metal such as aluminum or stainless steel. As described above, the outer chamber 12 is provided so as not to come into contact with the processing gas supplied to the inside of the inner chamber 11, and therefore, the surface of the outer chamber 12 is not coated. In other words, the outer chamber 12 is made of solid metal.

[0048] The outer chamber 12 is a container with a roughly rectangular parallelepiped shape, with an open top surface. The outer chamber 12 has a roughly cylindrical side wall 220 and a bottom plate 221 provided at the lower end of the side wall 220 so as to cover the lower surface of the opening.

[0049] On one side of the side wall 220, a wafer W loading / unloading port 230 is formed at a position corresponding to the loading / unloading port 210. On the other side of the side wall 220, a plurality of ports, for example three, are formed at positions corresponding to the ports 211.

[0050] The bottom plate 221 has multiple openings 232 to 235. Each of these openings 232 to 235 is formed at a position corresponding to the openings 212 to 215.

[0051] [Configuration of a sealed space] As shown in Figure 4, a sealed space T is formed between the inner chamber 11 and the outer chamber 12. The sealed space T is formed between the side walls 200 and 220, between the flange portion 201 and the side wall 220, and between the bottom plate 202 and the bottom plate 221. The sealed space T is sealed by a plurality of adapters and a plurality of sealing members, which will be described later. The sealing structure of this sealed space T will be described below.

[0052] The adapter connects the inner chamber 11 to the outside of the inner chamber 11 (e.g., the outer chamber 12) when the inner chamber 11 is attached to the outer chamber 12. Depending on its mounting position, the adapter may be attached from the inside of the inner chamber 11 or from the outside of the inner chamber 11. The adapter is made of a metal such as aluminum or stainless steel, and the surface of the adapter, i.e., the gas contact surface that comes into contact with the processing gas inside the inner chamber 11, is coated with a coating that is corrosion-resistant to the processing gas. A resin O-ring is used as the sealing member.

[0053] First, the sealing structure of the sealed space T at the wafer loading / unloading ports 210 and 230 will be described. An adapter 240 is provided at the loading / unloading port 210 of the inner chamber 11. The adapter 240 connects the side wall 200 of the inner chamber 11 and the side wall 220 of the outer chamber 12. The adapter 240 has a substantially cylindrical main body 241 with open ends at both ends, and a locking portion 242 that protrudes outward from the main body 241. The main body 241 extends horizontally from loading / unloading port 210 to loading / unloading port 230 along the inner surfaces of the loading / unloading ports 210 and 230. The locking portion 242 extends vertically along the side wall 200 of the inner chamber 11.

[0054] Figures 11 to 13 are explanatory diagrams showing the sealing structure of the sealed space T at the loading / unloading port 210 of the inner chamber 11. Note that in Figure 13, the adapter 240 is omitted from the illustration in order to explain the configuration of the side wall 200 of the inner chamber 11. As shown in Figures 11 to 13, the locking portion 242 of the adapter 240 and the side wall 200 of the inner chamber 11 are fastened together by a plurality of first fastening members 243. In addition, the side wall 200 of the inner chamber 11 and the side wall 220 of the outer chamber 12 are fastened together by a plurality of second fastening members 244. Screws, for example, are used for these fastening members 243 and 244.

[0055] A sealing member 245 is provided between the inner surface of the side wall 200 of the inner chamber 11 and the side surface of the locking portion 242 of the adapter 240. The sealing member 245 is provided in an annular shape so as to surround the loading / unloading port 210.

[0056] The first fastening member 243 is provided on the outside of the sealing member 245. Here, when the first fastening member 243 fastens from the locking portion 242 of the adapter 240 to the side wall 220 of the outer chamber 12, the processing gas inside the inner chamber 11 leaks out into the sealed space T through the gap between the first fastening member 243 and its screw hole. Therefore, in order to prevent the processing gas from leaking out into the sealed space T and coming into contact with the side wall 220 of the outer chamber 12, in this embodiment, the first fastening member 243 that fastens the inner chamber 11 and the adapter 240 is provided on the outside of the sealing member 245.

[0057] Furthermore, the second fastening member 244 is provided on the inside of the sealing member 245. If the second fastening member 244 were provided on the outside of the sealing member 245, the second fastening member 244 would be in communication with the inside of the inner chamber 11, causing the processing gas inside the inner chamber 11 to leak out into the sealed space T through the gap between the second fastening member 244 and its screw hole. Therefore, in order to prevent the processing gas from leaking out into the sealed space T and coming into contact with the side wall 220 of the outer chamber 12, the second fastening member 244 is provided on the inside of the sealing member 245 in this embodiment.

[0058] In the example shown in Figure 13, the sealing member 245 is curved to avoid interference with the second fastening member 244 in its vicinity, but the layout of the sealing member 245 is not limited to this. For example, if the second fastening member 244 is located further inward than in the example shown in Figure 13 (closer to the loading / unloading port 210), the curvature of the sealing member 245 can be omitted.

[0059] Furthermore, although a single sealing member 245 is provided in this embodiment, multiple sealing members may be provided. For example, in addition to the sealing member 245 provided in an annular shape to surround the loading / unloading port 210, sealing members (not shown) may be provided to individually surround the outer circumference of each second fastening member 244.

[0060] As shown in Figure 4, an adapter 246 is provided at the loading / unloading port 230 of the outer chamber 12. This adapter 246 is fastened to the side wall 220 of the outer chamber 12 by fastening members (not shown), such as screws. A sealing member 247 is provided between the adapter 246 and the side wall 220. In addition, a sealing member 248 is provided between the outer adapter 246 and the inner adapter 240. These sealing members 247 and 248 are each provided in an annular shape to surround the loading / unloading port 230.

[0061] With the above sealing structure, the sealed space T at the inlet and outlet 210 and 230 is sealed, preventing the processing gas inside the inner chamber 11 from flowing out into the sealed space T.

[0062] Next, the sealing structure of the sealed space T at the openings 213 and 233 (connection points for the exhaust pipe 60) will be described. Adapters 250 are provided at the openings 213 and 233. The adapters 250 connect the bottom plate 202 of the inner chamber 11 and the bottom plate 221 of the outer chamber 12. The adapters 250 extend vertically from the bottom plate 221 of the outer chamber 12 to the exhaust pipe 60.

[0063] A sealing member 251 is provided between the lower surface of the bottom plate 202 of the inner chamber 11 and the upper surface of the adapter 250. The sealing member 251 is provided in an annular shape so as to surround the openings 213 and 233.

[0064] With the above sealing structure, the sealed space T is sealed at the openings 213 and 233, preventing the processing gas inside the inner chamber 11 from flowing out into the sealed space T.

[0065] Next, the sealing structure of the sealed space T at the openings 214 and 234 (connection portion of the drive shaft 72) will be described. Adapters 260 are provided at the openings 214 and 234. The adapters 260 connect the bottom plate 202 of the inner chamber 11 and the bottom plate 221 of the outer chamber 12. The adapters 260 extend vertically from the bottom plate 221 of the outer chamber 12 to the drive shaft 72.

[0066] A sealing member 261 is provided between the lower surface of the bottom plate 202 of the inner chamber 11 and the upper surface of the adapter 260. The sealing member 261 is provided in an annular shape so as to surround the openings 214 and 234.

[0067] With the above sealing structure, the sealed space T is sealed at the openings 214 and 234, preventing the processing gas inside the inner chamber 11 from flowing out into the sealed space T.

[0068] Furthermore, the sealing structure of the sealed space T in the other openings 212 and 232 (installation areas for the mounting base 20 and inner wall 50), the sealing structure of the sealed space T in the openings 215 and 235 (connection areas for the guide shaft 73), and the sealing structure of the sealed space T in the ports 211 and 231 are all the same as the sealing structure described above. That is, each opening is provided with an adapter and a sealing member.

[0069] Next, the sealing structure of the sealed space T between the flange portion 201 and the upper surface of the side wall 220 will be described. A sealing member 270 is provided between the lower surface of the flange portion 201 and the upper surface of the side wall 220. The sealed space T is sealed so that the outside atmosphere does not flow into the sealed space T.

[0070] As shown in Figure 14, a gap G is formed between the lower surface of the flange portion 201 and the upper surface of the side wall 220. This gap suppresses heat transfer between the inner chamber 11 and the outer chamber 12. As described above, the sealed space T is reduced to a desired vacuum level by the depressurization section 130, and the sealed space T functions as a vacuum insulation layer between the inner chamber 11 and the outer chamber 12. In this embodiment, since heat transfer between the inner chamber 11 and the outer chamber 12 is suppressed by the gap G, the function of the vacuum insulation layer of the sealed space T can be maintained.

[0071] As described above, the sealed space T is sealed and enclosed by multiple adapters and multiple sealing members, which will be described later. Therefore, the processing gas inside the inner chamber 11 does not flow out into the sealed space T, and as a result, exposure of the outer chamber 12 to the processing gas is suppressed.

[0072] Multiple spacers 280 are provided in the sealed space T. The spacers 280 are in contact with the inner chamber 11 and the outer chamber 12. The spacers 280 are made of, for example, stainless steel. These spacers 280 help maintain the strength of the inner chamber 11. In other words, by providing the spacers 280, it is possible to reduce the thickness of the inner chamber 11. The installation position of the spacers 280 is arbitrary. For example, spacers 280 may be installed in areas of the inner chamber 11 where the strength is weak.

[0073] [Heater configuration] As shown in Figure 4, a heater ring 13 is provided on the upper surface of the flange portion 201 of the inner chamber 11 to heat the inner chamber 11. The heater ring 13 is provided in an annular shape. The inside of the heater ring 13 is maintained at atmospheric pressure, and the heater ring 13 contains an internal heater 290, such as a sheath heater or a cartridge heater. The outer chamber 12 is provided with an external heater (not shown) to heat the outer chamber 12. The external heater can be provided at any position. These internal heaters 290 and external heaters are controlled individually and can be adjusted to individual temperatures.

[0074] The inner heater 290 (heater ring 13) adjusts the inner chamber 11 to, for example, 120°C to 140°C. This suppresses, for example, the adhesion of foreign matter contained in the processing gas to the inner chamber 11.

[0075] Furthermore, as described above, the sealed space T is reduced to a desired vacuum level by the depressurization section 130 and functions as a vacuum insulation layer between the inner chamber 11 and the outer chamber 12. This sealed space T, which acts as a vacuum insulation layer, allows the inner chamber 11 to be thermally isolated, enabling efficient temperature control of the inner chamber 11.

[0076] The outer heater adjusts the temperature of the outer chamber 12 to, for example, 100°C or below. Here, the inner chamber 11 is thermally isolated by a sealed space T which is a vacuum insulation layer, but some heat transfer occurs between the inner chamber 11 and the sealed space T. In particular, the volume of the outer chamber 12 is large, and the outer chamber 12 is connected to a wafer transport device or the like outside the wafer processing apparatus 1, so some heat escapes from the inner chamber 11 through the outer chamber 12. Therefore, in this embodiment, the temperature of the inner chamber 11 is appropriately controlled by adjusting the temperature of the outer chamber 12. In other words, the outer heater functions as an assist in temperature control of the inner chamber 11.

[0077] The temperature of the outer chamber 12, which is adjusted by the outer heater, is arbitrary. However, the temperature of the inner chamber 11 is controlled to be higher than the temperature of the outer chamber 12. For example, in the case where the chamber has a single-layer structure, as in the wafer processing apparatus disclosed in Patent Document 1, the temperature of the chamber is adjusted to, for example, 120°C to 150°C. In this respect, in this embodiment, since the chamber 10 has a double-layer structure, the temperature of the outer chamber 12 can be kept lower than in the conventional design.

[0078] <Wafer Processing Method> Next, we will explain the wafer processing (COR processing) in the wafer processing apparatus 1 configured as described above.

[0079] First, with the partition wall 40 lowered to its retracted position, the wafer W is transported into the chamber 10 (inner chamber 11) by a transport mechanism (not shown) located outside the wafer processing apparatus 1, and placed on each of the mounting tables 20, 20.

[0080] Subsequently, the partition wall 40 is raised to the wafer processing position. This creates a processing space S by the partition wall 40.

[0081] Then, the exhaust unit 120 exhausts the inside of the inner chamber 11 to the desired pressure, and processing gas is supplied to the inside of the inner chamber 11 from the processing gas supply unit 100, and COR processing is performed on the wafer W. The processing gas in the processing space S passes through the exhaust space V and the slits 53 of each inner wall 50 and is discharged from the exhaust unit 120.

[0082] During the COR process, the temperature of the inner chamber 11 is adjusted to, for example, 120°C to 150°C by the inner heater 290 (heater ring 13), and the temperature of the outer chamber 12 is adjusted to, for example, 80°C or lower by the outer heater. In addition, the sealed space T is reduced to a desired vacuum level by the depressurization section 130, and functions as a vacuum insulation layer between the inner chamber 11 and the outer chamber 12. As a result, the temperature of the inner chamber 11 can be efficiently controlled by the vacuum insulation layer.

[0083] Furthermore, during the COR process, inert gas may be supplied to the sealed space T from the inert gas supply unit 110 to adjust the pressure in the sealed space T. For example, if a pressure difference occurs between the inside of the inner chamber 11 and the sealed space T, inert gas is supplied to the sealed space T from the inert gas supply unit 110 to adjust this pressure difference. Specifically, to suppress the inflow of processing gas into the sealed space T, the pressure in the sealed space T is adjusted so that the pressure inside the inner chamber 11 does not become higher than that in the sealed space T. Alternatively, for example, the pressure in the sealed space T may be monitored with a pressure gauge (not shown), and when the pressure falls below a threshold, inert gas is supplied to the sealed space T from the inert gas supply unit 110.

[0084] Once the COR process is complete, the partition wall 40 lowers to its retracted position, and the wafers W on each mounting table 20, 20 are transported outside the wafer processing apparatus 1 by a wafer transport mechanism (not shown). Subsequently, the wafers W are heated by a heating device located outside the wafer processing apparatus 1, and the reaction products generated by the COR process are vaporized and removed. This completes the series of COR processes.

[0085] <Maintenance of wafer processing equipment> Next, maintenance of the wafer processing apparatus 1 will be described. This maintenance includes, for example, replacing the inner chamber 11. Replacement of the inner chamber 11 may include, for example, changing the corrosion-resistant coating of the inner chamber 11 when changing the processing gas. Alternatively, for example, the inner chamber 11 may be replaced after performing COR processing on multiple wafers W, due to deterioration over time.

[0086] First, the vacuuming of the sealed space T by the depressurization unit 130 is stopped, and inert gas is supplied to the sealed space T from the inert gas supply unit 110. The supply of inert gas continues until the inside of the sealed space T reaches atmospheric pressure.

[0087] Subsequently, the lid 14 is removed to open the inside of the inner chamber 11 to the atmosphere, and then the inner chamber 11 is replaced. After forming a sealed space T between the inner chamber 11 and the outer chamber 12, the sealed space T is depressurized to the desired vacuum level by the depressurization unit 130. In this way, the preparation for the COR treatment is complete.

[0088] <Effects of this embodiment> According to the above embodiment, since the chamber 10 has a double structure, even if the type of processing gas changes and it becomes necessary to change the coating on the chamber surface, this can be handled by simply replacing the inner chamber 11. In other words, there is no need to replace the outer chamber 12. Therefore, unlike conventional wafer processing equipment, the load during chamber replacement can be reduced, such as the complete shutdown of the system on which the wafer processing equipment is installed, the undock of the wafer processing equipment, and the rerouting of gas supply lines, power supply lines, water supply lines, etc. Thus, the wafer processing equipment 1 is configured to be able to handle various processing gases (various gas processing) in a simple manner.

[0089] Furthermore, according to this embodiment, the outer chamber 12 does not come into contact with the processing gas supplied to the inside of the inner chamber 11. Therefore, there is no need to apply a corrosion-resistant coating to the surface of the outer chamber 12, and a solid metal material can be used for the outer chamber 12.

[0090] Furthermore, according to this embodiment, a sealed space T is formed between the inner chamber 11 and the outer chamber 12, and this sealed space T is sealed by a plurality of adapters and a plurality of sealing members. In particular, at the wafer loading and unloading ports 210 and 230, a first fastening member 243 that fastens the inner chamber 11 and the adapter 240 is provided on the outside of the sealing member 245, and a second fastening member 244 that fastens the inner chamber 11 and the outer chamber 12 is provided on the inside of the sealing member 245. Therefore, the inflow of processing gas into the sealed space T from the screw holes of the first fastening member 243 and the second fastening member 244 is suppressed, and the sealed space T can be reliably sealed. As described above, the sealing performance of the sealed space T can be ensured with a simple structure.

[0091] Furthermore, according to this embodiment, the sealed space T is depressurized to a desired vacuum level by the depressurization unit 130, and functions as a vacuum insulation layer between the inner chamber 11 and the outer chamber 12. In addition, a gap G is formed between the lower surface of the flange portion 201 of the inner chamber 11 and the upper surface of the side wall 220 of the outer chamber 12, and the inner chamber 11 and the outer chamber 12 do not come into contact in other areas, thus maintaining the function of the vacuum insulation layer in the sealed space T. As a result, the inner chamber 11 can be made thermally independent, and the temperature of the inner chamber 11 can be controlled efficiently. As a result, the load on the inner heater 290 can be reduced.

[0092] Furthermore, according to this embodiment, the pressure in the sealed space T can be adjusted by the inert gas supply unit 110. Therefore, during wafer processing, the pressure difference between the inside of the inner chamber 11 and the sealed space T can be suppressed, preventing the inflow of processing gas into the sealed space T. Moreover, when replacing the inner chamber 11, inert gas can be supplied to the sealed space T from the inert gas supply unit 110 to bring the inside of the sealed space T to atmospheric pressure, allowing for smooth replacement of the inner chamber 11.

[0093] Furthermore, according to this embodiment, the exhaust of air from inside the inner chamber 11 by the exhaust unit 120 and the pressure reduction of the sealed space T by the pressure reduction unit 130 can be controlled individually. Therefore, the pressure inside the inner chamber 11 and the pressure in the sealed space T can be appropriately adjusted.

[0094] Furthermore, according to this embodiment, the temperature of the inner chamber 11 controlled by the inner heater 290 (heater ring 13) and the temperature of the outer chamber 12 controlled by the outer heater can be controlled individually. Therefore, the temperatures of the inner chamber 11 and the outer chamber 12 can be appropriately adjusted.

[0095] In particular, in this embodiment, since the chamber 10 has a double structure with a sealed space T, the temperature of the outer chamber 12 can be kept lower than the temperature of the inner chamber 11. Therefore, the load on the outer heater can be reduced. In addition, the time from when the wafer processing apparatus 1 heats up to when maintenance is performed can be shortened, and the time from when the wafer processing apparatus 1 is restored after maintenance can also be shortened.

[0096] In the embodiments described above, a wafer processing apparatus 1 equipped with two mounting tables 20, as shown in Figure 2, was described. However, the above effects can also be enjoyed with a wafer processing apparatus 1 equipped with one mounting table 20, as shown in Figure 1.

[0097] Furthermore, although the above embodiments have been described in reference to examples where one or two mounting bases 20 are provided, the number of mounting bases 20 is not limited to these. For example, there may be three or more mounting bases 20.

[0098] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0099] Furthermore, although the above embodiments have described the case in which a COR treatment is performed on a wafer W as an example, the technology of this disclosure can also be applied to other wafer processing equipment that uses a processing gas, such as plasma processing equipment. [Explanation of Symbols]

[0100] 1. Wafer processing equipment 11 Inner Chamber 12 Outer chamber 100 Processing gas supply unit W wafer

Claims

1. A substrate processing apparatus for processing a substrate, an inner chamber containing a substrate; an outer chamber provided outside the inner chamber; a processing gas supply unit that supplies a processing gas into the inner chamber, The inner chamber is configured to be detachable from the outer chamber, The outer chamber is provided so as not to come into contact with the processing gas supplied to the inside of the inner chamber.

2. A sealed space is formed between the inner chamber and the outer chamber, The substrate processing apparatus includes: a pressure reducing unit that evacuates the space; The substrate processing apparatus according to claim 1 , further comprising an inert gas supply unit that supplies an inert gas to the space.

3. The substrate processing apparatus according to claim 2 , further comprising a control unit that controls the pressure reducing unit to evacuate the space, causing the space to function as a vacuum heat insulating layer.

4. The substrate processing apparatus according to claim 3 , wherein the control unit controls the inert gas supply unit to supply the inert gas to the space, and adjusts the pressure in the space.

5. 5. The substrate processing apparatus according to claim 2, wherein spacers are provided in the space so as to be in contact with the inner chamber and the outer chamber.

6. an exhaust section that exhausts the inside of the inner chamber; 6. The substrate processing apparatus according to claim 2, wherein the pressure reducing section and the exhaust section are controlled independently of each other.

7. the inner chamber has a flange portion that protrudes outward from an upper end of the inner chamber and is provided above the outer chamber, 7. The substrate processing apparatus according to claim 1, wherein a gap is formed between a lower surface of said flange portion and an upper surface of said outer chamber.

8. 8. The substrate processing apparatus according to claim 1, further comprising an adapter that connects the inner chamber to the outside of the inner chamber.

9. an exhaust section that exhausts the inside of the inner chamber; The substrate processing apparatus according to claim 8 , wherein the adapter is provided to connect the inner chamber and the exhaust unit.

10. a substrate loading / unloading port is formed in a sidewall of the inner chamber and a sidewall of the outer chamber; The substrate processing apparatus according to claim 8 , wherein the adapter is provided to connect the inner chamber and the outer chamber at the loading / unloading port.

11. a first fastening member that fastens the inner chamber and the adapter; a second fastening member fastening the inner chamber and the outer chamber together; a seal member disposed between the inner chamber and the adapter; the first fastening member is provided on the outside of the seal member, The substrate processing apparatus according to claim 10 , wherein the second fastening member is provided inside the seal member.

12. 12. The substrate processing apparatus according to claim 1, further comprising an inner heater for heating the inner chamber.

13. the inner chamber has a flange portion protruding outward from an upper end of the inner chamber, The substrate processing apparatus according to claim 12 , wherein the inner heater is provided on an upper surface side of the flange portion.

14. an outer heater for heating the outer chamber; The substrate processing apparatus according to claim 12 or 13, wherein the inner heater and the outer heater are controlled independently.

15. The substrate processing apparatus of claim 14 , wherein the temperature of the inner heater is higher than the temperature of the outer heater.

16. 16. The substrate processing apparatus according to claim 1, wherein a coating having corrosion resistance against the processing gas is applied to a surface of the inner chamber that comes into contact with the gas.

17. an exhaust section that exhausts the inside of the inner chamber; The substrate processing apparatus according to any one of claims 1 to 16, wherein the exhaust section is provided at one location in the inner chamber.

18. A substrate processing method for processing a substrate using a substrate processing apparatus, comprising: The substrate processing apparatus includes: an inner chamber containing a substrate; an outer chamber provided outside the inner chamber, The substrate processing method includes: housing a substrate within the inner chamber; and processing the substrate while supplying a processing gas into the inner chamber without the processing gas contacting the outer chamber.

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