Vacuum processing apparatus and substrate processing method

Abstract

To provide a vacuum treatment apparatus and a substrate treatment method that can adjust a pressure distribution of a gas supplied to a substrate and containing oxygen.SOLUTION: A vacuum treatment apparatus comprises: a rotatable mount part on which a substrate is mounted; a shutter which can move between a shield position where the substrate mounted on the mount part is shielded and a retraction position where the shutter retracts from the substrate; a drive part which moves the shutter; and a control part which controls the drive part. The shutter has a shield member which forms a treatment space with the mount part and a gas supply part which supplies a gas to the treatment space. The control part moves the shutter to a gas supply position between the shield position and the retraction position, and supplies the gas.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a vacuum processing apparatus and a substrate processing method.

Background Art

[0002] In Patent Document 1, a target arranged to face a substrate on a placement portion in a vacuum chamber is sputtered by ions in a plasma obtained by plasmaizing a gas for plasma generation to form a metal film on the substrate, and then this metal film is oxidized. In the vacuum processing apparatus, a shielding member movable between a shielding position covering the substrate and a retracted position retracted from the position covering the substrate, and an oxygen supply unit configured to be movable between an upper position of the substrate and a retracted position retracted from the upper position and for supplying a gas containing oxygen are provided.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] By the way, since oxygen is highly reactive, when a gas containing oxygen is supplied to the substrate from a position far from the substrate, the gas containing oxygen reacts and adsorbs with, for example, the metal attached to the inner wall of the chamber when forming a metal film on the substrate by sputtering the target, so that stable supply to the metal film formed on the substrate becomes impossible.

[0005] Further, as shown in the vacuum processing apparatus disclosed in Patent Document 1, when the shielding member is moved to the shielding position and the oxygen supply unit is moved to the upper position and a gas containing oxygen is supplied to the substrate, a pressure difference occurs between the vicinity of the center and the outer edge of the substrate.

[0006] With respect to the above problems, on one hand, an object is to provide a vacuum processing apparatus and a substrate processing method capable of adjusting the pressure distribution of a gas containing oxygen supplied to a substrate.

Means for Solving the Problems

[0007] In order to solve the above problems, according to one aspect, there is provided a vacuum processing apparatus including a rotatable mounting portion on which a substrate is mounted, a shutter movable between a shielding position for shielding the substrate mounted on the mounting portion and a retracted position for retracting from the substrate, a driving portion for moving the shutter, and a control portion for controlling the driving portion. The shutter includes a shielding member that forms a processing space between the shutter and the mounting portion, and a gas supply portion for supplying a gas to the processing space. The control portion moves the shutter to a gas supply position between the shielding position and the retracted position to supply the gas.

Effects of the Invention

[0008] According to one aspect, it is possible to provide a vacuum processing apparatus and a substrate processing method capable of adjusting the pressure distribution of a gas containing oxygen supplied to a substrate.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Mode for Carrying Out the Invention

[0010] Hereinafter, modes for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and duplicate descriptions may be omitted.

[0011] <Substrate processing system 100> An example of the overall configuration of the substrate processing system 100 will be described with reference to FIG. 1. FIG. 1 is a plan view showing an example of the configuration of the substrate processing system 100.

[0012] The substrate processing system 100 shown in FIG. 1 is a system having a cluster structure (multi-chamber type). The substrate processing system 100 includes a plurality of processing chambers 111 to 115, a vacuum transfer chamber 120, load lock chambers 131 and 132, an atmospheric transfer chamber 140, a load port 150, and a control unit 200.

[0013] The processing chambers (vacuum processing apparatuses) 111 to 115 are depressurized to a predetermined vacuum atmosphere, and a desired process (cleaning process, etching process, film forming process, etc.) is performed on a wafer (substrate) W therein. The processing chambers 111 to 115 are arranged adjacent to the vacuum transfer chamber 120. The processing chambers 111 to 115 and the vacuum transfer chamber 120 communicate with each other by opening and closing a gate valve (refer to the gate valve 24 described later in FIG. 2). The processing chambers 111 to 115 have a placement portion (refer to the placement portion 6 described later in FIG. 2) for placing the wafer W. Note that the operations of each part for the process in the processing chambers 111 to 115 are controlled by the control unit 200.

[0014] The vacuum transfer chamber 120 is connected to a plurality of chambers (processing chambers 111 to 115, load lock chambers 131 and 132) via gate valves and is depressurized to a predetermined vacuum atmosphere. Further, inside the vacuum transfer chamber 120, a vacuum transfer device 121 for transferring the wafer W is provided. The vacuum transfer device 121 transfers the wafer W into and out of the processing chambers 111 to 115 and the vacuum transfer chamber 120 according to the opening and closing of the gate valves of the processing chambers 111 to 115. Further, the vacuum transfer device 121 transfers the wafer W into and out of the load lock chambers 131 and 132 and the vacuum transfer chamber 120 according to the opening and closing of the gate valves of the load lock chambers 131 and 132. Note that the operation of the vacuum transfer device 121 and the opening and closing of the gate valves are controlled by the control unit 200.

[0015] The load lock chambers 131 and 132 are provided between the vacuum transfer chamber 120 and the atmospheric transfer chamber 140. The load lock chambers 131 and 132 have a placement section (not shown) for placing the wafer W. The load lock chambers 131 and 132 can switch between an atmospheric atmosphere and a vacuum atmosphere. The load lock chambers 131 and 132 and the vacuum transfer chamber 120 in the vacuum atmosphere communicate with each other by opening and closing a gate valve. The load lock chambers 131 and 132 and the atmospheric transfer chamber 140 in the atmospheric atmosphere communicate with each other by opening and closing a door valve. Note that the switching between the vacuum atmosphere and the atmospheric atmosphere inside the load lock chambers 131 and 132 is controlled by the control unit 200.

[0016] The atmospheric transfer chamber 140 is in an atmospheric atmosphere, and for example, a downflow of clean air is formed. Further, inside the atmospheric transfer chamber 140, an atmospheric transfer device 141 for transferring the wafer W is provided. Further, an aligner 142 for aligning the wafer W is provided in the atmospheric transfer chamber 140.

[0017] In addition, a load port 150 is provided on the wall surface of the atmospheric transfer chamber 140. The load port 150 has a carrier F containing the wafer W or an empty carrier F attached thereto. As the carrier F, for example, a FOUP (Front Opening Unified Pod) or the like can be used.

[0018] The atmospheric transfer device 141 transfers the wafer W into and out of the load lock chambers 131 and 132 and the atmospheric transfer chamber 140 according to the opening and closing of the door valve. Further, the atmospheric transfer device 141 transfers the wafer W into and out of the aligner 142 and the atmospheric transfer chamber 140. Also, The atmospheric transfer device 141 transfers the wafer W into and out of the carrier F attached to the load port 150 and the atmospheric transfer chamber 140. Note that the operation of the atmospheric transfer device 141 and the opening and closing of the door valve are controlled by the control unit 200.

[0019] The control unit 200 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and an HDD (Hard Disk Drive). The control unit 200 may have other storage areas such as an SSD (Solid State Drive) instead of the HDD. In the storage areas such as the HDD and the RAM, a recipe in which the procedure of the process, the conditions of the process, and the transfer conditions are set is stored.

[0020] The CPU controls the processing of the wafer W in each of the processing chambers 111 to 115 according to the recipe and controls the transfer of the wafer W. Programs for executing the processing of the wafer W and the transfer of the wafer W in each of the processing chambers 111 to 115 may be stored in the HDD or the RAM. The program may be provided by being stored in a storage medium or may be provided from an external device through a network.

[0021] FIG. 2 is an example of a cross-sectional view of an element formed in the substrate processing system 100 according to this embodiment. Here, a case of forming a perpendicular magnetization type MTJ (Magnetic Tunnel Junction) element (magnetoresistive element) will be described as an example.

[0022] The substrate 301 is, for example, a Si substrate. The lower electrode 302 is formed on the substrate 301. The underlayer 303 is formed on the lower electrode 302. The underlayer 303 is formed by laminating, for example, a Ta film and a Ru film.

[0023] On the underlayer 303, a fixed layer 307 having a SAF (Synthetic Antiferromagnet) structure is formed. The fixed layer 307 includes a first magnetic layer 304, a spacer layer 305, and a second magnetic layer 306.

[0024] The first magnetic layer 304 is formed on the underlayer 303. The first magnetic layer 304 forms an antiferromagnetic coupling with the second magnetic layer 306 via a nonmagnetic spacer layer 305, and fixes the magnetization direction of the second magnetic layer 306. The first magnetic layer 304 is formed, for example, as a multilayer film in which a Co film and a Pt film are alternately laminated.

[0025] The nonmagnetic spacer layer 305 is formed on the first magnetic layer 304. The spacer layer 305 is formed of, for example, Ru, Rh, Ir, or the like.

[0026] The second magnetic layer 306 is formed on the spacer layer 305. The second magnetic layer 306 is formed of, for example, a CoFeB film. Further, the second magnetic layer 306 is formed by laminating, for example, a multilayer film in which a Co film and a Pt film are alternately laminated, a Ta film, and a CoFeB film.

[0027] The tunnel barrier layer 310 is formed on the second magnetic layer 306. The tunnel barrier layer 310 is formed of a MgO film.

[0028] The free layer 321 is formed on the tunnel barrier layer 310. The free layer 321 is formed of, for example, a CoFeB film. Thus, the CoFeB film of the fixed layer 307 (second magnetic layer 306), the MgO film of the tunnel barrier layer 310, and the CoFeB film of the free layer 321 form the MTJ element.

[0029] The cap layer 322 is formed on the free layer 321. The cap layer 322 is formed by laminating, for example, a Ta film and a Ru film.

[0030] In the substrate processing system 100 shown in FIG. 1, the processing chamber 111 is a processing chamber that performs a pre-cleaning process (etching process) on the wafer W on which the lower electrode 302 is formed. Further, the processing chamber 112 is a processing chamber that forms the underlayer 303, the first magnetic layer 304, and the spacer layer 305 on the wafer W processed in the processing chamber 111. Further, the processing chamber 113 is a processing chamber that forms the second magnetic layer 306 on the wafer W processed in the processing chamber 112. Further, the processing chamber 114 is a processing chamber that forms the tunnel barrier layer 310. Further, the processing chamber 115 is a processing chamber that forms the free layer 321 and the cap layer 322.

[0031] In such a substrate processing system 100, the control unit 200 controls the atmospheric transfer device 141 and the vacuum transfer device 121 to position-adjust the wafer W accommodated in the carrier F attached to the load port 150 using the aligner 142, and transfer it to the processing chamber 111 via the load lock chambers 131 and 132. Next, the control unit 200 controls the processing chamber 111 to perform a pre-cleaning process on the wafer W. Next, the control unit 200 controls the vacuum transfer device 121 to transfer the wafer W processed in the processing chamber 111 from the processing chamber 111 to the processing chamber 112. Next, the control unit 200 controls the processing chamber 112 to form the underlayer 303, the first magnetic layer 304, and the spacer layer 305 on the wafer W. Next, the control unit 200 controls the vacuum transfer device 121 to transfer the wafer W processed in the processing chamber 112 from the processing chamber 112 to the processing chamber 113. Next, the control unit 200 controls the processing chamber 113 to form the second magnetic layer 306 on the wafer W.

[0032] Next, the control unit 200 controls the vacuum transfer device 121 to transfer the wafer W processed in the processing chamber 113 from the processing chamber 113 to the processing chamber 114. The control unit 200 controls the processing chamber 114 to form a tunnel barrier layer 310 on the wafer W.

[0033] Next, the control unit 200 controls the vacuum transfer device 121 to transfer the wafer W processed in the processing chamber 114 from the processing chamber 114 to the processing chamber 115. Next, the control unit 200 controls the processing chamber 115 to form a free layer 321 and a cap layer 322 on the wafer W. Thereby, the perpendicular magnetization type MTJ element shown in FIG. 2 is formed on the wafer W. Finally, the control unit 200 controls the vacuum transfer device 121 and the atmospheric transfer device 141 to accommodate the wafer W processed in the processing chamber 115 in the carrier F attached to the load port 150 via the load lock chambers 131 and 132.

[0034] <Processing chamber 114> Next, the processing chamber (vacuum processing device) 114 for forming a metal oxide film on the wafer W will be further described with reference to FIG. 3. FIG. 3 is an example of a cross-sectional view showing the configuration of the processing chamber (vacuum processing device) 114 according to the present embodiment. Here, the processing chamber 114 will be described as forming an MgO film as the tunnel barrier layer 310 on the wafer W.

[0035] The vacuum vessel 2 is formed of a conductive material such as stainless steel and is grounded. The vacuum vessel 2 has a cylindrical portion 2a and a protruding portion 2b.

[0036] An exhaust passage 21 is connected to the bottom of the protruding portion 2b of the vacuum vessel 2. The exhaust passage 21 is connected to a vacuum exhaust device 22 via a pressure adjustment unit 21a. Further, a gate valve 24 for opening and closing the carry-in / carry-out port 23 of the wafer W is provided on the side surface portion of the cylindrical portion 2a of the vacuum vessel 2. Note that the processing chamber 114 is connected to the vacuum transfer chamber 120 (see FIG. 1) via the gate valve 24.

[0037] On the ceiling of the cylindrical portion 2a of the vacuum container 2, target electrodes 32a and 32b are provided. The target electrodes 32a and 32b are formed in a circular shape in plan view and have substantially the same size. Also, the target electrodes 32a and 32b are provided horizontally side by side (aligned in the X-axis direction).

[0038] The target electrode 32a is held by a ring-shaped holder 33a. The holder 33a is joined to the ceiling of the cylindrical portion 2a via a ring-shaped insulator 25a. Similarly, the target electrode 32b is held by a ring-shaped holder 33b. The holder 33b is joined to the ceiling of the cylindrical portion 2a via a ring-shaped insulator 25b. Thereby, the target electrodes 32a and 32b are disposed at positions lower than the upper surface of the cylindrical portion 2a in a state of being electrically insulated from the vacuum container 2.

[0039] The target electrode 32a is connected to a power supply unit 34a via a switch 35a. When performing sputtering of the target 31a, the power supply unit 34a applies, for example, a negative DC voltage to the target electrode 32a. Similarly, the target electrode 32b is connected to a power supply unit 34b via a switch 35b. When performing sputtering of the target 31b, the power supply unit 34b applies, for example, a negative DC voltage to the target electrode 32b.

[0040] On the lower surface of the target electrode 32a, a target 31a is joined. As the material of the target 31a, for example, a member that absorbs oxygen and moisture (hereinafter also referred to as a gettering member) is used, such as titanium (Ti), chromium (Cr), tantalum (Ta), zirconium (Zr), magnesium (Mg), or hafnium (Hf), or an alloy thereof.

[0041] On the lower surface of the target electrode 32b, a target 31b is joined. As the material of the target 31b, magnesium (Mg), which is a film-forming material for the metal film (MgO film, tunnel barrier layer 310) formed on the wafer W, is used.

[0042] Immediately below the targets 31a and 31b, a shutter 41 is provided. The shutter 41 is a circular plate sized to cover the projection areas of both targets 31a and 31b, and is rotatably attached to the center of the upper surface of the cylindrical portion 2a via a rotating shaft 43. At a position corresponding to the rotating shaft 43 above the ceiling portion of the vacuum chamber 2, a rotation drive unit 44 having a magnet 44a is provided, and the rotating shaft 43 rotates due to magnetic coupling between this magnet 44a and a magnet 43a provided on the rotating shaft 43 side.

[0043] Also, one opening 42 sized slightly larger than the targets 31a and 31b is formed in the shutter 41. When the opening 42 of the shutter 41 is positioned in the area facing one target 31a (or 31b), the other target 31b (or 31a) is covered by the shutter 41. This can prevent particles emitted by sputtering from adhering to the other target 31b (or 31a) when sputtering is being performed on one target 31a (or 31b).

[0044] Above the target electrode 32a, a magnet array 51a is provided in proximity to the target electrode 32a. The magnet array 51a serves to enhance the uniformity of erosion of the target 31a. The magnet array 51a is configured such that an N - pole magnet group and an S - pole magnet group are arranged on a base body of a material with high permeability, for example, iron (Fe), and can perform rotational motion or linear motion (reciprocating motion) by a drive mechanism 52a.

[0045] Also, at a position facing the targets 31a and 31b in the vacuum chamber 2, a mounting portion 6 for horizontally mounting the wafer W is provided. The mounting portion 6 is connected to a drive mechanism 61 disposed below the vacuum chamber 2 via a shaft member 6a. The drive mechanism 61 has a function of rotating the mounting portion 6. Further, the drive mechanism 61 has a function of raising and lowering the mounting portion 6 between a delivery position when delivering the wafer W between the vacuum transfer device 121 and the mounting portion 6 via the lifting pins 63 and a processing position during sputtering.

[0046] The shaft member 6a penetrates the bottom of the vacuum chamber 2 and is connected to the drive mechanism 61. A seal portion 62 for keeping the inside of the vacuum chamber 2 airtight is provided at the position where the shaft member 6a penetrates the vacuum chamber 2.

[0047] Three lifting pins 63 are provided so as to support the lower surface of the wafer W at three locations, and are lifted and lowered via a support member 65 by a lifting portion 64.

[0048] Also, a heating mechanism (not shown) is provided in the mounting portion 6 and is configured to be able to heat the wafer W during sputtering.

[0049] Also, a circular shutter 7 larger in size than the wafer W is provided inside the vacuum chamber 2. The shutter 7 is configured to be rotatable horizontally about a support column 7a provided at an end portion, and rotates between a shielding position covering the wafer W mounted on the mounting portion 6 and a retracted position (see the two-dot chain line) retracted from the shielding position (the position covering the wafer W). The support column 7a penetrates the bottom of the vacuum chamber 2 and is rotatably supported by a rotation support portion 72 via a rotation drive portion 71.

[0050] The support column 7a penetrates the bottom of the vacuum chamber 2 and is connected to the rotation drive portion 71. A seal portion 73 for keeping the inside of the vacuum chamber 2 airtight is provided at the position where the support column 7a penetrates the vacuum chamber 2.

[0051] Also, in addition to the shielding function, the shutter 7 has oxygen (O 2)It has a function of supplying gas to the wafer W. The function of supplying oxygen gas will be described later with reference to FIGS. 6 and 7.

[0052] Also, inside the shutter 7, a heater (not shown) for heating the shutter 7 is provided. The power supply unit 72a supplies power to the heater inside the shutter 7 via a slip ring (not shown) provided on the rotary support unit 72. Thereby, the shutter 7 can supply preheated oxygen gas to the wafer W.

[0053] Also, on the upper side wall of the vacuum chamber 2, an Ar gas supply path 28 for supplying an inert gas, which is a gas for plasma generation, for example, Ar gas, into the vacuum chamber 2 is provided. This Ar gas supply path 28 is connected to an Ar gas supply source 26 via a gas control device group 27 such as a valve and a flow meter.

[0054] The control unit 200 controls the power supply operations from the power supply units 34a and 34b, the supply operation of Ar gas from the Ar gas supply source 26, the lifting and rotating operations of the mounting unit 6 by the drive mechanism 61, the rotating operation and oxygen gas supply operation of the shutter 7, the rotating operations of the magnet arrays 51a and 51b, the rotating operation of the shutter 41, the evacuation operation of the inside of the vacuum chamber 2 by the vacuum evacuation device 22, and other operations related to the processing chamber 114. Then, the control unit 200 reads a program in which a command group for the control necessary for forming a metal oxide film on the wafer W is assembled via an external storage medium, for example, a hard disk, a tape storage, a compact disk, a magneto-optical disk, a memory card, etc., and controls the entire vacuum processing apparatus.

[0055] FIG. 4 is a flowchart for explaining the film forming process by the processing chamber 114 according to the present embodiment. FIG. 5 is a schematic diagram for explaining the state of the processing chamber 114 according to the present embodiment. Here, as an example of the metal oxide film, an MgO film is formed on the wafer W.

[0056] In step S101, a wafer W is prepared. Here, the wafer W on which the second magnetic layer 306 has been formed through processing in the processing chamber 113 (see FIG. 1) is placed on the placement unit 6 in the processing chamber 114.

[0057] In step S102, an Mg film formation process is performed. As shown in FIG. 5(a), the control unit 200 controls the rotation drive unit 44 to position the opening 42 of the shutter 41 in the region facing the target 31b. Also, the control unit 200 controls the rotation drive unit 71 to move the shutter 7 to the retracted position. Then, the control unit 200 controls the gas control device group 27 to supply Ar gas into the vacuum chamber 2 from the Ar gas supply path 28. Also, the control unit 200 controls the switch 35b to apply a voltage to the target electrode 32b. Also, the control unit 200 controls the drive mechanism 52b to rotate the magnet array 51b. Also, the control unit 200 controls the drive mechanism 61 to rotate the placement unit 6. As a result, the Ar gas is ionized, the target 31b is sputtered, and Mg particles adhere onto the wafer W, forming an Mg film.

[0058] When the Mg film formation process is completed, the control unit 200 controls the gas control device group 27 to stop the supply of Ar gas. Also, the control unit 200 controls the switch 35b to stop the application of voltage to the target electrode 32b. Also, the control unit 200 controls the drive mechanism 52b to stop the magnet array 51b.

[0059] In step S103, Mg film oxidation treatment is performed. As shown in FIG. 5(b), the control unit 200 controls the rotation drive unit 44 to position the opening 42 of the shutter 41 in a region where it does not face the targets 31a, 31b. In other words, the shutter 41 is positioned to cover the targets 31a, 31b. The control unit 200 controls the rotation drive unit 71 to move the shutter 7 to the shielding position. Thereby, a processing space is formed between the shutter 7 and the mounting unit 6. Further, the control unit 200 controls the drive mechanism 61 to rotate the mounting unit 6. Then, the control unit 200 controls the oxygen gas control device group (the oxygen gas control device groups 82, 84 described later in FIG. 6) to supply oxygen gas to the processing space. As a result, when the Mg film formed on the wafer W is oxidized to form an MgO film and the Mg film oxidation treatment is completed, the control unit 200 controls the oxygen gas control device group to stop the gas supply.

[0060] In step S104, the control unit 200 determines whether or not a predetermined number of repetitions has been performed. If the predetermined number of repetitions has not been performed (S104·No), the process of the control unit 200 returns to step S102. If the predetermined number of repetitions has been performed (S104·Yes), the drive mechanism 61 is controlled to stop the rotation of the mounting unit 6, and the process of the control unit 200 ends. Thereafter, the wafer W is transferred to the processing chamber 115 (see FIG. 1).

[0061] Note that the film formation process by the processing chamber 114 is not limited to that shown in FIG. 5. The film formation process by the processing chamber 114 may include a step of sputtering the target 31a made of a getter member to absorb oxygen and moisture in the vacuum chamber 2.

[0062] FIG. 6 is a schematic view of the shutter 7 provided in the processing chamber 114 according to the present embodiment as viewed from below. FIG. 7 is a diagram for explaining the flow of oxygen gas in the processing chamber 114 according to the present embodiment.

[0063] The shutter 7 has a shielding member 701, a gas supply member 702, and a rotating shaft 703. The shielding member 701 is a plate-shaped member. The gas supply member 702 has a gas supply port 702a. Further, the gas supply member 702 also serves as a support member for supporting the shielding member 701. The rotating shaft 703 rotates (swings) the shielding member 701 and the gas supply member 702.

[0064] As shown in FIG. 7, by disposing the shielding member 701 above the placement portion 6, a processing space is formed between the shielding member 701 and the placement portion 6 for supplying oxygen gas. The placement portion 6 on which the wafer W is placed rotates by a drive mechanism 61. The gas supply member 702 supplies oxygen gas into the processing space.

[0065] FIG. 8 is a diagram for explaining the shielding position and the retracted position of the shutter 7. In FIG. 8, the shutter 7A disposed at the shielding position is illustrated by a solid line, and the shutter 7B disposed at the retracted position is illustrated by a two-dot chain line. The shutter 7 is driven by a rotation drive unit 71 and is configured to be movable between the shielding position and the retracted position. Here, the shielding position is a position where the shutter 7 covers the wafer W placed on the placement portion 6 when viewed from above. In other words, the shielding position is a position where the center of the circular placement portion 6 and the center of the circular shutter 7 coincide when viewed from above. The retracted position is a position retracted from the shielding position. In other words, the retracted position is a position where the shutter 7 does not cover the wafer W placed on the placement portion 6 when viewed from above.

[0066] FIG. 9 is a diagram for explaining the position of the shutter 7 at the gas supply position in the present embodiment. In FIG. 9, the shutter 7C arranged at the gas supply position is illustrated by a solid line, and the shutter 7A arranged at the shielding position is illustrated by a two-dot chain line. At the time of gas supply, the shutter 7 is positioned at the gas supply position rotated by the opening degree θ from the shielding position. In the example of FIG. 9, the opening degree θ = 0° corresponds to the shielding position, and the opening degree θ = 90° corresponds to the retracted position. At the gas supply position, when viewed from above, a part of the wafer W placed on the placement portion 6 is covered by the shutter 7 (7C), and the remaining portion of the wafer W is arranged to be exposed from the shutter 7 (7C). In other words, at the gas supply position, the gas supply port 702a of the gas supply member 702 is arranged near the edge of the wafer W.

[0067] FIG. 10 is an example of a graph for explaining the RA distribution of the MTJ element in the reference example. In the reference example shown in FIG. 10, the shutter 7 was arranged at the shielding position and O 2 gas was supplied. In FIG. 10, the horizontal axis represents the radial distance from the center of the wafer W. The vertical axis represents the distribution of the normalized resistance area product (RA).

[0068] As shown in FIG. 10, the RA distribution has a tendency that the center side of the wafer W is higher than the outer peripheral side of the wafer W. In the example shown in FIG. 10, the RA distribution (1σ, %) was 2.1%. The RA distribution (1σ, %) is a value obtained by normalizing the deviation (1σ) of RA by the average of RA and multiplying by 100 and expressing it as a percentage.

[0069] FIG. 11 is an example of a graph for explaining the RA distribution of the MTJ element in the present embodiment. In the present embodiment shown in FIG. 11, the shutter 7 was arranged at the gas supply position with the opening degree θ being 15°, 20°, 25° and O 2 gas was supplied. In FIG. 11, the horizontal axis represents the radial distance from the center of the wafer W. The vertical axis represents the distribution of the normalized resistance area product (RA).

[0070] As shown in FIG. 11, by adjusting the opening degree θ of the shutter 7, the RA distribution can be improved. In the example shown in FIG. 11, the RA distribution (1σ, %) at the opening degree θ of 15° was 1.7%. The RA distribution (1σ, %) at the opening degree θ of 20° was 0.96%. The RA distribution (1σ, %) at the opening degree θ of 25° was 1.2%. In all cases, the RA distribution could be improved as compared with the reference example shown in FIG. 10.

[0071] That is, by controlling the opening degree θ of the shutter 7, the position of the processing space formed between the shielding member 701 and the mounting portion 6 and the O 2 position of the gas supply port 702a for discharging the gas are adjusted. Thereby, the pressure distribution of the O 2 gas discharged onto the wafer W can be adjusted. Thereby, the oxidation treatment in the radial direction of the wafer W can be adjusted. Further, by rotating the mounting portion 6, the uniformity of the oxidation treatment in the circumferential direction of the wafer W can be ensured.

[0072] As described above, the substrate processing system and the vacuum processing apparatus have been described according to the above embodiments. However, the substrate processing system and the vacuum processing apparatus according to the present invention are not limited to the above embodiments, and various modifications and improvements are possible within the scope of the present invention. The matters described in the above plurality of embodiments can be combined within a non - conflicting range.

[0073] Although the vacuum processing apparatus (processing chamber 114) has been described as forming an MgO film on the wafer W, it is not limited thereto. The vacuum processing apparatus (processing chamber 114) may be configured to form a metal oxide film on the wafer W. Further, the gas supplied from the shutter 7 to the wafer W has been described as being O 2 a gas, but it is not limited thereto, and other oxidation gases may be used.

Explanation of Reference Numerals

[0074] 6 Mounting portion 7 Shutter 71 Rotation drive unit (drive unit) 701 Shielding member 702 Gas supply member 702a Gas supply port 703 Rotation axis 81, 83 Oxygen gas supply source 82, 84 Oxygen gas control device group 91~93 Gas flow 100 Substrate processing system 111~115 Processing chamber (vacuum processing apparatus) 200 Control unit 310 Tunnel barrier layer W Wafer F Carrier

Claims

1. A rotatable placement part for placing a substrate, A shutter movable between a shielding position for shielding the substrate placed on the placement part and a retracted position for retracting from the substrate, A drive part for moving the shutter, A control part for controlling the drive part, and comprising, The shutter is, A shielding member forming a processing space between it and the placement part, A gas supply part for supplying gas to the processing space, and having, The control part is, Moving the shutter to a gas supply position between the shielding position and the retracted position and supplying the gas, A vacuum processing apparatus.

2. When the control part supplies the gas, Controlling the drive part to move the shutter so that a part of the substrate is covered by the shutter and the remaining part of the substrate is exposed from the shutter, The vacuum processing apparatus according to Claim 1.

3. When the control part supplies the gas, Controlling the drive part to move the shutter so that the gas supply part is arranged near the edge of the substrate, The vacuum processing apparatus according to Claim 2.

4. A substrate processing method of a vacuum processing apparatus comprising a rotatable placement part for placing a substrate, a shielding member forming a processing space between it and the placement part, a gas supply part for supplying gas to the processing space, a shutter movable between a shielding position for shielding the substrate placed on the placement part and a retracted position for retracting from the substrate, a drive part for moving the shutter, and a control part for controlling the drive part, wherein, Controlling the opening and closing degree of the shutter to adjust the pressure distribution of the gas ejected onto the substrate, A substrate processing method.

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