Conveyor device

Abstract

To suppress an increase in footprint due to the connection of a vacuum transfer modules, and adjust the notch direction of the substrate during transfer when the maximum number of processing modules in a vacuum transfer system is increased by connecting the vacuum transfer modules.SOLUTION: A transport device includes a first vacuum transfer module, a first transfer robot, a second vacuum transfer module, a second transfer robot, a cylindrical connection module, a wafer support portion that is rotatably attached to the cylindrical connection module and is configured to support the wafer, and at least three ring support members extending outward from the wafer support portion and configured to support the at least one ring.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a conveying device.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus and a processing method for processing a substrate. As an example of the apparatus configuration, a configuration is disclosed in which two transfer modules equipped with process modules are connected to perform substrate processing. Further, Patent Document 1 discloses a technique of providing a rotation module (rotation mechanism) and rotating the substrate as necessary.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure provides a conveying device capable of suppressing an increase in the footprint associated with the connection of vacuum conveying modules when increasing the maximum number of mounted processing modules in a vacuum conveying system by connecting the vacuum conveying modules, and aligning the notch direction of the substrate during conveyance.

Means for Solving the Problems

[0005] One aspect of the present disclosure includes a first vacuum transfer module, a first transfer robot disposed within the first vacuum transfer module, a second vacuum transfer module, a second transfer robot disposed within the second vacuum transfer module, a cylindrical connection module disposed between the first vacuum transfer module and the second vacuum transfer module, a wafer support portion disposed within the cylindrical connection module, and a plurality of ring support members extending outward from the wafer support portion. The plurality of ring support members includes a first ring support member and a second ring support member. The first ring support member is configured to extend into the first vacuum transfer module, and the second ring support member is configured to extend into the second vacuum transfer module. It is a transfer device.

Advantages of the Invention

[0006] According to the present disclosure, when increasing the maximum number of processing modules in a vacuum transfer system by connecting vacuum transfer modules, it is possible to suppress an increase in the footprint associated with the connection of the vacuum transfer modules and align the notch direction of the substrate during transfer.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Modes for Carrying Out the Invention

[0008] In the manufacturing process of semiconductor devices, the inside of a processing module containing a semiconductor wafer (hereinafter simply referred to as "wafer") is depressurized (vacuumed), and various processing steps are performed on the wafer. These processing steps are performed in a substrate processing apparatus (hereinafter also referred to as a wafer processing apparatus) equipped with a plurality of processing modules.

[0009] This wafer processing apparatus has, for example, an atmospheric section equipped with an atmospheric module that performs a desired process on the wafer in an atmospheric atmosphere, and a reduced-pressure (vacuum) section equipped with a reduced-pressure (vacuum) module that processes the wafer in a reduced-pressure (vacuum) atmosphere. The atmospheric section and the reduced-pressure (vacuum) section are integrally connected via a load lock module configured to be able to switch the inside between an atmospheric atmosphere and a reduced-pressure (vacuum) atmosphere.

[0010] By the way, in the design of a wafer processing apparatus, as disclosed in Patent Document 1, it may be required to mount more processing modules from the viewpoints of user needs and efficiency improvement of wafer processing.

[0011] However, in view of various issues such as reduction of the footprint of the wafer processing apparatus, limitation of the transfer arm length, and improvement of throughput in the wafer processing apparatus, there is room for further consideration regarding a suitable apparatus design when the number of processing modules is increased. For example, when mounting more processing modules on a vacuum transfer system, one proposal is to provide a path module for connecting existing vacuum transfer modules. However, in this case, an increase in the footprint due to the mounting of the path module and a deviation in the notch direction due to the transfer of the wafer in the path module become issues.

[0012] The technology according to the present disclosure has been made in view of the above circumstances, and provides a transfer device configured with a path module that can suppress an increase in the footprint and align the notch direction of the wafer during transfer. Hereinafter, a wafer processing apparatus as a transfer device according to the present embodiment will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0013] <Configuration of Wafer Processing Apparatus> First, the wafer processing apparatus according to the present embodiment will be described. FIG. 1 is a plan view showing an outline of the configuration of a wafer processing apparatus 1 according to the present embodiment. In the present embodiment, a case where the wafer processing apparatus 1 includes a processing module for performing plasma processing such as etching processing, film forming processing, or diffusion processing on a wafer W as a substrate will be described. Note that the module configuration of the wafer processing apparatus 1 of the present disclosure is not limited to this, and can be arbitrarily selected according to the purpose of wafer processing.

[0014] As shown in FIG. 1, the wafer processing apparatus 1 has a configuration in which an atmospheric section 10 and a reduced pressure section (vacuum section) 11 are integrally connected via a load lock module 20. The atmospheric section 10 includes an atmospheric module that processes and transfers the wafer W in an atmospheric atmosphere. The reduced pressure section (vacuum section) 11 includes a reduced pressure module (vacuum module) that processes and transfers the wafer W in a reduced pressure (vacuum) atmosphere.

[0015] The load lock module 20 has a plurality of, for example, three wafer transfer chambers 21a, 21b, and 21c along the width direction (X-axis direction) of a loader module 30 and a fitting module 60 described later.

[0016] The wafer transfer chambers 21a, 21b, and 21c as substrate transfer chambers (hereinafter, these may be simply referred to as "wafer transfer chamber 21" collectively.) are provided to communicate the internal space of the loader module 30 described later in the atmospheric section 10 and the internal space of the first transfer module 50a described later in the reduced-pressure section 11 via wafer transfer ports 22 and 23. Note that the wafer transfer ports 22 and 23 are each configured to be openable and closable by gate valves 24 and 25.

[0017] The wafer transfer chamber 21 is configured to temporarily hold the wafer W. Further, the wafer transfer chamber 21 is configured to be switchable between an atmospheric atmosphere and a reduced-pressure atmosphere (vacuum state) inside. That is, the load lock module 20 is configured to be able to appropriately transfer the wafer W between the atmospheric section 10 in the atmospheric atmosphere and the reduced-pressure section 11 in the reduced-pressure atmosphere.

[0018] The atmospheric section 10 has a loader module 30 provided with a wafer transfer mechanism 40 described later and a load port 32 on which a hoop 31 capable of storing a plurality of wafers W is placed. Note that an orienter module (not shown) for adjusting the horizontal orientation of the wafer W, a storage module (not shown) for storing a plurality of wafers W, etc. may be provided adjacent to the loader module 30.

[0019] The loader module 30 has a rectangular housing inside, and the inside of the housing is maintained in an atmospheric atmosphere. A plurality of, for example, five load ports 32 are arranged side by side on one side surface constituting the long side on the negative Y-axis side of the loader module 30. On the other side surface constituting the long side on the positive Y-axis side of the loader module 30, the wafer transfer chambers 21a, 21b, and 21c of the load lock module 20 are arranged side by side.

[0020] Inside the loader module 30, a wafer transfer mechanism 40 for transferring the wafer W is provided. The wafer transfer mechanism 40 includes a transfer arm 41 that holds and moves the wafer W, a turntable 42 that rotatably supports the transfer arm 41, and a rotating mounting table 43 on which the turntable 42 is mounted. Further, inside the loader module 30, a guide rail 44 extending in the longitudinal direction (X-axis direction) of the loader module 30 is provided. The rotating mounting table 43 is provided on the guide rail 44, and the wafer transfer mechanism 40 is configured to be movable along the guide rail 44.

[0021] The decompression unit 11 includes two transfer modules (vacuum transfer modules) 50a and 50b for transferring the wafer W inside (hereinafter, also referred to as the first transfer module (first vacuum transfer module) 50a and the second transfer module (second vacuum transfer module) 50b), a path module (cylindrical connection module) 55 that interconnects the two transfer modules 50a and 50b, a fitting module 60 that interconnects the load lock module 20 and the first transfer module 50a, and a processing module 70 that processes the wafer W transferred from the transfer modules 50a and 50b. The interiors of the transfer modules 50a and 50b, the fitting module 60, and the processing module 70 are each configured to be maintainable in a decompressed (vacuum) atmosphere. In this embodiment, a plurality of, for example, six processing modules 70 are connected to one transfer module 50a (or 50b). Note that the number and arrangement of the processing modules 70 are not limited to this embodiment and can be arbitrarily set.

[0022] As described above, the first transfer module 50a as a vacuum transfer module is connected to the load lock module 20 via the fitting module 60. The first transfer module 50a and the second transfer module 50b transfer, for example, the wafer W carried into the wafer transfer chamber 21a of the load lock module 20 to one or a plurality of processing modules 70 for processing, and then transfer it to the atmosphere section 10 via the wafer transfer chamber 21c of the load lock module 20.

[0023] Inside the first transfer module 50a, a first wafer transfer mechanism (first transfer robot) 80a as a first transfer mechanism for transferring the wafer W is provided. The first wafer transfer mechanism 80a includes a transfer arm 81a that holds and moves the wafer W, a turntable 82a that rotatably supports the transfer arm 81a, and a rotating mounting table 83a on which the turntable 82a is mounted. The rotating mounting table 83a is fixed to the central portion of the first transfer module 50a. In one embodiment, the first transfer robot 80a is disposed within the first vacuum transfer module 50a and is configured to transfer the wafer W and at least one ring ER1 simultaneously or separately. The ring ER1 has an inner diameter larger than the diameter of the wafer W. In one embodiment, the at least one ring may have a plurality of rings ER1, ER2. Each of the rings ER1, ER2 has an inner diameter larger than the diameter of the wafer W. In this case, the first transfer robot 80a may transfer the plurality of rings ER1, ER2 simultaneously or separately. In one embodiment, the plurality of rings ER1, ER2 are edge rings that are used together within the plasma processing module 70. The plurality of edge rings ER1, ER2 are arranged to surround the wafer W within the plasma processing module 70. In one embodiment, the plurality of edge rings ER1, ER2 include a first edge ring ER1 and a second edge ring ER2, and the outer diameter of the second edge ring ER2 is larger than the outer diameter of the first edge ring ER1. In one embodiment, the first edge ring ER1 is made of an Si material or an SiC material, and the second edge ring ER2 is made of quartz. Note that the first edge ring ER1 and the second edge ring ER2 may be made of the same material. For example, the first edge ring ER1 and the second edge ring ER2 may be made of quartz.

[0024] Inside the second transfer module 50b, a second wafer transfer mechanism (second transfer robot) 80b is provided as a second transfer mechanism for transferring the wafer W. The second wafer transfer mechanism 80b has the same functional configuration as the first wafer transfer mechanism 80a, and mechanisms such as a transfer arm 81b, a turntable 82b, and a rotating mounting table 83b are provided. In one embodiment, the second transfer robot 80b is arranged inside the second vacuum transfer module 50b and is configured to transfer the wafer W and at least one ring ER1 simultaneously or separately. When at least one ring has a plurality of rings ER1, ER2, the second transfer robot 80b may transfer the plurality of rings ER1, ER2 simultaneously or separately.

[0025] The processing module 70 performs plasma processing such as etching processing, film forming processing, or diffusion processing on the wafer W. In the processing module 70, a module for performing processing according to the purpose of wafer processing can be arbitrarily selected. Further, the processing module 70 communicates with each of the transfer modules 50a, 50b via a wafer transfer port 51 formed on the side wall surface of each of the transfer modules 50a, 50b, and the wafer transfer port 51 is configured to be openable and closable using a gate valve 71.

[0026] As shown in FIG. 1, the above wafer processing apparatus 1 is provided with a control unit 90. The control unit 90 is a computer equipped with, for example, a CPU and a memory, and has a program storage unit (not shown). A program for controlling the transfer and processing of the wafer W in the wafer processing apparatus 1 is stored in the program storage unit. Note that the above program may be recorded on a computer-readable storage medium H and installed from the storage medium H to the control unit 90.

[0027] <Configuration of Each Module> The wafer processing apparatus 1 according to this embodiment is configured as described above. Next, the detailed configurations of each module will be described. FIG. 2 is a longitudinal sectional view schematically showing the schematic configurations of the load lock module 20, the fitting module 60, the first transfer module 50a, the second transfer module 50b, and the pass module 55.

[0028] The load lock module 20 has three wafer transfer chambers 21a, 21b, and 21c arranged side by side along the width direction (X-axis direction) of the fitting module 60. In each of the three wafer transfer chambers 21, a wafer transfer port 22 for delivering the wafer W to and from the loader module 30 and a wafer transfer port 23 for delivering the wafer W to and from the first transfer module 50a are formed. In other words, three wafer transfer ports 22 and 23 are respectively formed on the side walls on the negative Y-axis side and the positive Y-axis side of the load lock module 20.

[0029] The wafer transfer chamber 21 of the load lock module 20 is connected to the loader module 30 and the first transfer module 50a via gate valves 24 and 25. These gate valves 24 and 25 ensure airtightness and enable communication between the wafer transfer chamber 21 and the loader module 30 or the transfer modules 50a and 50b.

[0030] As shown in FIG. 2, a stocker 26 for temporarily holding the wafer W transferred between the loader module 30 and the transfer modules 50a and 50b is provided in the wafer transfer chamber 21.

[0031] Further, as shown in FIG. 2, an air supply unit 27 for supplying gas into the wafer transfer chamber 21 and an exhaust unit 28 for discharging gas are connected to the load lock module 20. The load lock module 20 is configured such that the inside of the wafer transfer chamber 21 can be switched between an atmospheric atmosphere and a reduced-pressure atmosphere by these air supply unit 27 and exhaust unit 28.

[0032] At one end on the negative Y-axis side where the fitting module 60 in the first transfer module 50a is connected, an opening 52 for transporting the wafer W is formed between the fitting module 60. At the other end on the positive Y-axis side of the first transfer module 50a, the second transfer module 50b is connected via the path module 55. In other words, the first transfer module 50a is connected to one end on the negative Y-axis side of the second transfer module 50b via the path module 55, and the other end on the positive Y-axis side of the second transfer module 50b is closed by the end plate 53 as a plate-like member.

[0033] In this way, between the transfer modules 50a and 50b, the path module 55, and the fitting module 60, no plate-like members or gate valves are provided as shown in the figure. That is, the transfer modules 50a and 50b, the path module 55, and the fitting module 60 have their internal spaces communicating with each other, and define an integrated transfer space S in which the wafer W is transported by the first wafer transfer mechanism 80a and the second wafer transfer mechanism 80b.

[0034] On the side surfaces on the negative X-axis side and the positive X-axis side that constitute the long sides of the transfer modules 50a and 50b, as described above, a plurality of wafer transfer ports 51 communicating with the processing module 70 are formed. The wafer transfer ports 51 are configured to be openable and closable using the gate valves 71.

[0035] Also, on the ceiling surfaces of the transfer modules 50a and 50b above the wafer transfer ports 51, a gas supply unit 54 for supplying an inert gas (e.g., N 2 gas) to the transfer space S is connected. This gas supply unit 54 supplies an inert gas to the transfer space S so as to block the wafer transfer ports 51, that is, to form an air curtain, and suppresses the scattering of particles and the like from the processing module 70 to the transfer modules 50a and 50b when the gate valve 71 is open.

[0036] Further, the gas supply unit 54 supplies an inert gas into the transfer space S so as to eliminate the stagnant portion of the air flow inside the transfer space S and enable the inside of the transfer space S to be appropriately exhausted by an exhaust mechanism (not shown) connected to the fitting module 60.

[0037] <Configuration of the Pass Module> As described above, the pass module 55 interconnects the first transfer module 50a and the second transfer module 50b. The inside of the pass module 55 is spatially communicated with the inside of the first transfer module 50a and the second transfer module 50b, and is in a reduced-pressure atmosphere during wafer W transfer. FIG. 3 is a perspective view schematically showing the configuration of the pass module 55. In FIG. 3, a state in which the wafer W is transferred into the pass module 55 by a wafer transfer mechanism 80a (transfer arm 81a) is illustrated.

[0038] As shown in FIGS. 1 and 2, the load lock module 20, the fitting module 60, the first transfer module 50a, the pass module 55, and the second transfer module 50b are connected in this order side by side from the Y-axis negative direction side.

[0039] Further, as shown in FIG. 3, the pass module 55 is configured in a cylindrical shape having a first opening 55a formed on one side surface (Y-axis negative direction side) connected to the first transfer module 50a and a second opening 55b formed on the other side surface (Y-axis positive direction side) connected to the second transfer module 50b.

[0040] In the pass module 55 according to the present embodiment, both the first opening 55a and the second opening 55b have a size that enables the wafer W to be appropriately transferred between the pass module 55 and each of the transfer modules 50a and 50b.

[0041] Also, the depth dimension H1 of the pass module 55 in the Y-axis direction is designed to be smaller than the diameter (substrate dimension) of the wafer W. However, the depth dimension H1 of the pass module 55 is designed to be a dimension that allows the installation of the rotation mechanisms 56a and 56b that constitute the transfer unit 56 described later. Further, the depth dimension H1 of the pass module 55 may be designed based on the clearance (spacing) between the processing modules 70 adjacent to each other in the vicinity of the pass module 55. For example, from the perspective of the footprint of the entire apparatus, the spacing between adjacent processing modules 70 is set to about 10 mm, and the depth dimension H1 of the pass module 55 is designed based on that value. Therefore, the cylindrical connection module 55 is disposed between the first vacuum transfer module 50a and the second vacuum transfer module 50b. The first vacuum transfer module 50a, the second vacuum transfer module 50b, and the cylindrical connection module 55 are arranged along the first direction Y. The cylindrical connection module 55 has a first length H1 in the first direction Y. The first length H1 is smaller than the diameter of the wafer W.

[0042] As shown in FIG. 1, the pass module 55 is provided with a transfer unit 56 for transferring the wafer W between the first transfer module 50a and the second transfer module 50b. As shown in FIG. 1, the transfer unit 56 according to the present embodiment includes two rotation mechanisms (wafer support units) 56a and 56b, and these rotation mechanisms 56a and 56b are arranged side by side in the width direction (X-axis direction) of the pass module 55.

[0043] FIG. 4 is a schematic explanatory diagram showing an example of the configuration of the rotating mechanisms 56a and 56b. Here, the rotating mechanism 56a is taken as an example and illustrated, but the rotating mechanism 56b also has a similar configuration. As shown in FIG. 4, the rotating mechanism 56a includes a shaft member 100 that encloses a drive shaft, a substrate support portion (wafer stage) 105 having a substrate support surface (wafer support surface) 105a at the upper end of the shaft member 100, and an edge ring support portion 108 having at least three or more rod-shaped holding members (ring support members) 107 that extend outwardly on the outer periphery of the substrate support portion 105. In the configuration of FIG. 4, three holding members 107a, 107b, and 107c are provided at 120° intervals on the outer periphery of the substrate support portion 105.

[0044] The substrate support portion 105 is respectively connected to a drive shaft (not shown) enclosed in the shaft member 100 and is configured to be rotatable along with the drive of the drive shaft. The substrate support portion 105 is preferably designed to fit within the pass module 55. Also, the edge ring support portion 108 may be configured not to rotate, or may be connected to the drive shaft and configured to be rotatable in the same manner as the substrate support portion 105. As an example of the configuration, these substrate support portion 105 and edge ring support portion 108 may rotate integrally, or may rotate independently of each other. Note that these substrate support portion 105 and edge ring support portion 108 may be configured to be detachable from the shaft member 100. By removing the substrate support portion 105 and the edge ring support portion 108, the efficiency during the transportation and packaging of the apparatus can be improved.

[0045] On the substrate support surface 105a of the substrate support portion 105, the wafer W can be fixed and placed by a locking member such as an O-ring. This substrate support surface 105a may be a disk-shaped member having a diameter smaller than that of the wafer W, and its dimensions are preferably designed to be smaller than the fork width of the transfer arms 81a and 81b in view of transferring the wafer W between the transfer arms 81a and 81b. Therefore, the wafer support portions 56a and 56b are rotatably attached to the cylindrical connection module 55 and are configured to support the wafer W. The wafer support portion 56a includes a wafer stage 105 and a shaft member 100. The wafer stage 105 has a wafer support surface 105a. The wafer support surface 105a has a diameter smaller than the first length H1. The shaft member 100 extends downward from the wafer stage 105. The wafer support portion 56b also has the same configuration as the wafer support portion 56a.

[0046] An edge ring support surface 109 having a shape protruding upward may be formed at the outer tip of the holding member 107. The substrate support surface 105a and the edge ring support surface 109 may be at the same height level or at different height levels. Therefore, at least three ring support members 107a, 107b, 107c extend outward from the wafer support portion 56a and are configured to support at least one ring ER1 together. When at least one ring has a plurality of rings ER1, ER2, at least three ring support members 107a, 107b, 107c are configured to support the plurality of rings ER1, ER2 together. At least three ring support members 107a, 107b, 107c include a first ring support member 107a and a second ring support member 107b. In one embodiment, the first ring support member 107a extends into the interior of the first vacuum transfer module 50a, and the second ring support member 107b extends into the interior of the second vacuum transfer module 50b. At least three ring support members 107a, 107b, 107c may be rotatable. In one embodiment, each ring support member 107a, 107b, 107c includes a rod-shaped portion and a protruding portion. The rod-shaped portion is attached to the shaft member 100 at one end. The protruding portion protrudes upward from the other end of the rod-shaped portion and has a ring support surface 109 at the upper end. Also, it is preferable that the edge ring support surface 109 has a certain width in the radial direction of the rotation mechanism 56a. This is for supporting and rotating two types of rings (for example, a focus ring FR and a cover ring CR) having different diameters as the edge ring ER on the edge ring support surface 109.

[0047] FIG. 5 is a schematic explanatory view showing a state in which two types of edge rings ER1, ER2 having different diameters are placed on the edge ring support surface 109 in the rotation mechanisms 56a, 56b. According to the configuration according to the present embodiment, as shown in FIG. 5, two types of edge rings ER1, ER2 having different diameters can be simultaneously supported on the edge ring support surface 109 and held and rotated. The focus ring FR is a member made of, for example, silicon that performs alignment around the wafer W, and the covering CR is a member made of, for example, quartz that covers the outside of the focus ring FR. The edge ring ER is an annular member that is arranged so as to surround the wafer W when plasma processing is performed on the wafer W. Here, it is a general term for the above-mentioned focus ring FR and covering CR.

[0048] As described above, it is preferable that the dimension of the substrate support portion 105 is designed to be smaller than the depth dimension H1 of the pass module 55. On the other hand, the overall dimension including the holding members 107 (107a to 107c) of the edge ring support portion 108 may be designed to be larger than the depth dimension H1 of the pass module 55. In that case, the tip of the holding member 107 may extend to the inside of each transfer module 50a and 50b.

[0049] <Wafer transfer method> Next, in the wafer processing apparatus 1 according to the present embodiment, an example of a method for transferring the wafer W via the pass module 55 will be described. For example, when first substrate processing is performed on the same wafer W in the processing module 70 provided on the side surface of the first transfer module 50a and then second substrate processing is performed in another processing module 70 provided on the side surface of the second transfer module 50b, it is necessary to transfer the wafer W from the first transfer module 50a to the second transfer module 50.

[0050] First, after the first substrate processing is performed in the processing module 70 provided on the side surface of the first transfer module 50a, the wafer W is taken out from the processing module 70 by the first wafer transfer mechanism 80a (transfer arm 81a), and the wafer W is placed on any one of the substrate support portions 105 of the rotation mechanisms 56a and 56b in the pass module 55.

[0051] Then, with the wafer W placed on the substrate support portion 105, the substrate support portion 105 and the wafer W are integrally rotated by a predetermined angle by driving the drive shaft included in the shaft member 100. After the rotation is completed, the wafer W is taken out from the substrate support portion 105 by the second wafer transfer mechanism 80b (transfer arm 81b). The wafer W is directly transferred into the processing module 70 provided on the side surface of the second transfer module 50b by the second wafer transfer mechanism 80b. Then, the second substrate processing is performed in the processing module 70 provided on the side surface of the second transfer module 50b. Therefore, the control unit 90 controls the first transfer robot 80a to place the wafer W on the wafer support portion 56a. Next, the control unit 90 controls the wafer support portion 56a to rotate the wafer W on the wafer support portion 56a by a predetermined angle. Thereafter, the control unit 90 controls the second transfer robot 80b to transfer the wafer W on the wafer support portion 56a into the second vacuum transfer module 50b.

[0052] When transporting a plurality of wafers W in the semiconductor device manufacturing process, from the viewpoints of process characteristics and mass productivity, it is desirable to perform the transportation so that the wafers W face the same direction uniformly within the processing module 70. Therefore, it is desirable that the transportation be controlled so that the wafers W face the same direction uniformly in the processing module 70 at the destination during transportation by the first wafer transfer mechanism 80a (transfer arm 81a) and during transportation by the second wafer transfer mechanism 80b (transfer arm 81b).

[0053] From such a perspective, a notch (cut) is formed at a predetermined location on the wafer W. When the wafer W is transported to the processing module 70 during substrate processing, it is required to perform control such that the wafer W uniformly faces the same direction within the processing module 70 by aligning the notch direction of the wafer W. The wafer processing apparatus 1 according to the present embodiment has a configuration in which a first transfer module 50a and a second transfer module 50b are connected via a pass module 55. Depending on the content of the substrate processing for the wafer W, it is necessary to transport the same wafer W to a plurality of processing modules 70, and in that case, it is required to transport the wafer W via the pass module 55.

[0054] According to the configuration of the present embodiment, by providing rotation mechanisms 56a and 56b in the pass module 55 through which the wafer W passes during transportation, it becomes possible to rotate the wafer W by a predetermined angle and transfer it when transferring the wafer W from the first wafer transfer mechanism 80a to the second wafer transfer mechanism 80b. As a result, the wafer W can be transported so that the notch direction of the wafer W uniformly faces the same direction within the processing module 70 at the transport destination, and the uniformity of substrate processing and the improvement of throughput can be achieved.

[0055] Although the method of transferring the wafer W has been described here, the scope of application of the present disclosure is not limited thereto. That is, when plasma processing is performed on the wafer W in the processing module 70, as in the wafer processing apparatus 1 according to the present embodiment, the edge ring ER may be configured to be transportable in the vacuum transfer unit. As described above, the rotation mechanisms 56a and 56b include an edge ring support portion 108 for supporting the edge ring ER. Therefore, similar to when the wafer W is transported, the edge ring ER can be rotated during the transportation of the edge ring ER and transported to the processing module 70 in a desired orientation. Accordingly, the control unit 90 controls the first transfer robot 80a to place at least one ring ER1, ER2 on at least three ring support members 107a, 107b, 107c. Thereafter, the control unit 90 controls the second transfer robot 80b to transport at least one ring ER1, ER2 on at least three ring support members 107a, 107b, 107c into the second vacuum transfer module 50b.

[0056] According to the wafer processing apparatus 1 according to the present embodiment, when more processing modules 70 are mounted on one vacuum transfer system in response to various requirements, the path module 55 having an extremely small depth dimension (specifically, equal to or less than the diameter of the wafer W) is used to connect the existing vacuum transfer modules (transfer modules 50a and 50b). Thereby, an increase in the footprint can be suppressed when increasing the maximum number of mounted processing modules 70.

[0057] Also, according to the wafer processing apparatus 1 according to the present embodiment, in the configuration in which the first transfer module 50a and the second transfer module 50b are connected via the path module 55 in order to increase the maximum number of mounted processing modules 70, the path module 55 that transfers the wafer W is provided with rotation mechanisms 56a and 56b. Thereby, for example, when transferring the same wafer W from the first wafer transfer mechanism 80a to the second wafer transfer mechanism 80b, it is possible to transfer the wafer W after rotating it by a desired angle. That is, the wafer W can be transferred so that the notch direction of the wafer W is uniformly in the same direction within the processing module 70 at the transfer destination, and throughput improvement and the like can be achieved.

[0058] It should be considered that all aspects of the embodiments disclosed this time are illustrative and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

[0059] For example, as the wafer processing apparatus 1 according to the above embodiment, a configuration having two transfer modules 50a and 50b and a path module 55 that connects them has been illustrated and described, but the apparatus configuration is not limited to this. That is, a configuration may be adopted in which three or more transfer modules 50 are connected by a plurality of path modules 55, and the terminal portion is closed by the end plate 53.

Explanation of Reference Numerals

[0060] 1 Wafer processing apparatus 50 Transfer module 55 Path module 56a, 56b Rotation mechanism 80a First transfer mechanism 80b Second transfer mechanism 105 Substrate support portion 108 Edge ring support portion W Wafer

Claims

1. a first vacuum transfer module; a first transfer robot disposed within the first vacuum transfer module; a second vacuum transfer module; a second transfer robot disposed within the second vacuum transfer module; a tubular connection module disposed between the first vacuum transfer module and the second vacuum transfer module; a wafer support disposed within the cylindrical joint module; a plurality of ring support members extending outwardly from the wafer support; The transport apparatus, wherein the plurality of ring support members includes a first ring support member and a second ring support member, the first ring support member configured to extend into the first vacuum transport module and the second ring support member configured to extend into the second vacuum transport module.

2. 2. The transport apparatus of claim 1, wherein the first vacuum transport module, the second vacuum transport module and the tubular joint module are arranged along a first direction, and the tubular joint module has a first length in the first direction.

3. The transport apparatus of claim 2 , wherein the wafer support comprises a wafer stage having a wafer support surface, the wafer support surface having a diameter smaller than the first length.

4. The transport apparatus of claim 1 , wherein the wafer support is rotatable.

5. The transport apparatus of claim 1 , wherein the plurality of ring support members are rotatable.

6. The transport apparatus of claim 4 , wherein the plurality of ring support members are rotatable.

7. the wafer support further includes a shaft member extending downward from the wafer stage, 4. The conveying device of claim 3, wherein each of the plurality of ring support members includes a rod-shaped portion and a protruding portion, the rod-shaped portion being attached to the shaft member at one end, the protruding portion protruding upward from the other end of the rod-shaped portion, and having a ring support surface at an upper end.

8. The transport apparatus of claim 7 , wherein the ring support surface is at the same height as the wafer support surface.

9. The transport apparatus of claim 7 , wherein the ring support surface is at a different elevation than the wafer support surface.

10. 8. The transport device according to claim 7, wherein the plurality of ring support members includes three ring support members arranged at 120 degree intervals around the shaft member.

11. controlling the first transfer robot to place a wafer on the wafer support; controlling the wafer support to rotate the wafer on the wafer support by a predetermined angle; The transfer apparatus of claim 6 , further comprising a controller configured to control the second transfer robot to transfer the wafer on the wafer support into the second vacuum transfer module.

12. The control unit is controlling the first transfer robot to place at least one ring on the plurality of ring supports; The transfer apparatus of claim 11 , configured to control the second transfer robot to transfer the at least one ring on the plurality of ring supports into the second vacuum transfer module.

13. a first vacuum transfer module; a first transfer robot disposed within the first vacuum transfer module; a second vacuum transfer module; a second transfer robot disposed within the second vacuum transfer module; a tubular connection module disposed between the first vacuum transfer module and the second vacuum transfer module; a wafer support disposed within the cylindrical joint module; a plurality of ring support members extending outwardly from the wafer support; The transport apparatus, wherein the plurality of ring support members includes a first ring support member, the first ring support member configured to extend into either the first vacuum transport module or the second vacuum transport module.

14. 14. The transport apparatus of claim 13, wherein the first vacuum transport module, the second vacuum transport module and the tubular joint module are arranged along a first direction, and the tubular joint module has a first length in the first direction.

15. 15. The transport apparatus of claim 14, wherein the wafer support comprises a wafer stage having a wafer support surface, the wafer support surface having a diameter smaller than the first length.

16. The transport apparatus of claim 14 , wherein the wafer support is rotatable.

17. 17. The transport apparatus of claim 16, wherein the plurality of ring support members are rotatable.

18. the wafer support further includes a shaft member extending downward from the wafer stage, 16. The conveying device of claim 15, wherein each of the plurality of ring support members includes a rod-shaped portion and a protruding portion, the rod-shaped portion being attached to the shaft member at one end, the protruding portion protruding upward from the other end of the rod-shaped portion, and having a ring support surface at an upper end.

19. controlling the first transfer robot to place a wafer on the wafer support; controlling the wafer support to rotate the wafer on the wafer support by a predetermined angle; 20. The transfer apparatus of claim 17, further comprising a controller configured to control the second transfer robot to transfer the wafer on the wafer support into the second vacuum transfer module.

20. The control unit is controlling the first transfer robot to place at least one ring on the plurality of ring supports; 20. The transfer apparatus of claim 19, configured to control the second transfer robot to transfer the at least one ring on the plurality of ring supports into the second vacuum transfer module.

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