Substrate processing apparatus, method for manufacturing semiconductor device, substrate processing method, program, and vacuum exhaust apparatus

Abstract

To provide a substrate processing apparatus that can enhance exhaust efficiency while reducing a footprint.SOLUTION: A substrate processing apparatus 1 comprises: a first processing module 2A including a first processing container 18A for substrate processing and a substrate loading port provided on a front side thereof; a first utility system 54A including a first supply system for supplying processing gas into the first processing container and arranged in proximity to a back surface of the first processing module; a first vacuum exhaust device arranged behind the first processing module, and including a first pump 38A configured to exhaust an inside of the first processing container and a trestle 55A for the first pump; and a first exhaust system which includes a first exhaust pipe 34A for establishing approximately linear fluid communication between an inlet port of the first pump and a first exhaust port 30A provided on the back side of the first processing container, and a first pressure adjustment part provided on a channel of the first exhaust pipe. The trestle holds the first pump at a predetermined height so as to make the inlet port of the first pump substantially face the first exhaust port.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus that performs processes such as thin film formation on a substrate, a method for manufacturing a semiconductor device, and a substrate processing method. 、 Program and a vacuum evacuation device It is related to.

Background Art

[0002] In a method for manufacturing a semiconductor device, a vertical substrate processing apparatus may be used as an apparatus for forming an oxide film or a metal film on a substrate (hereinafter referred to as a wafer). There is also a substrate processing apparatus that includes a plurality of boats for holding wafers and processing chambers for processing wafers, and sequentially loads and unloads the boats into and out of each processing chamber to process the wafers.

[0003] In a conventional substrate processing apparatus, it is necessary to secure a maintenance area for performing maintenance of each mechanism around the substrate processing apparatus, for example, on the side. Therefore, since it is necessary to install considering the maintenance area as well, the footprint required for installing the substrate processing apparatus becomes large, and the COO (Cost of Owenership) also becomes high.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a configuration that improves exhaust efficiency while reducing the footprint.

Means for Solving the Problem

[0006] This disclosure relates to A first processing module having a first processing container for substrate processing and a substrate loading port provided on the front side, a first supply system for supplying a processing gas into the first processing container, a first utility system disposed adjacent to the back surface of the first processing module, a first vacuum evacuation device disposed behind the first processing module and including a first pump for evacuating the inside of the first processing container and a pedestal for the first pump, a first exhaust pipe fluidly connecting the first exhaust port provided on the back side of the first processing container and the intake port of the first pump in a substantially straight line, and a first pressure adjustment unit provided on the flow path of the first exhaust pipe, and the pedestal holds the first pump at a predetermined height so that the intake port of the first pump faces substantially opposite to the first exhaust port its configuration.

Effect of the Invention

[0007] According to this disclosure, it is possible to improve the exhaust efficiency (exhaust speed) while suppressing the variation (machine difference) in exhaust characteristics among a plurality of substrate processing apparatuses.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

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Figure 18

Mode for Carrying Out the Invention

[0009] Hereinafter, exemplary non-limiting embodiments of the present disclosure will be described with reference to the drawings. Note that the drawings used in the following description are all schematic, and the dimensional relationships and ratios of the respective elements shown in the drawings do not necessarily match the actual ones. Also, the dimensional relationships and ratios of the respective elements do not necessarily match even between multiple drawings. Further, throughout the drawings, the same or corresponding configurations are denoted by the same or corresponding reference numerals, and duplicate descriptions are omitted. Also, the side of the storage chamber 13 described later is defined as the front side (front), and the sides of the first utility system 54A and the second utility system 54B described later are defined as the back side (rear). Furthermore, the side facing the boundary line (adjacent surface) between the first processing module 2A and the second processing module 2B described later is defined as the inner side, and the side away from the boundary line is defined as the outer side.

[0010] In the present embodiment, the substrate processing apparatus is configured as a vertical substrate processing apparatus (hereinafter referred to as the substrate processing apparatus) 1 that performs a substrate processing step such as heat treatment as one step in the manufacturing process in the manufacturing method of a semiconductor device (device).

[0011] As shown in FIGS. 1 and 2, the substrate processing apparatus 1 includes a first processing module 2A and a second processing module 2B. The processing modules 2A and 2B each have a housing or body having an approximately rectangular parallelepiped contour, and one side surface of each is arranged in close contact or adjacent to each other in parallel. The processing module 2A is composed of a first processing furnace 4A (processing furnace 4A) and a first transfer chamber 5A (transfer chamber 5A). The processing module 2B is composed of a second processing furnace 4B (processing furnace 4B) and a second transfer chamber 5B (transfer chamber 5B).

[0012] Below the processing furnace 4A and the processing furnace 4B, the transfer chamber 5A and the transfer chamber 5B are respectively arranged. Adjacent to the front side of the transfer chamber 5A and the transfer chamber 5B, a transfer chamber 11 is arranged. The transfer chamber 11 has a housing with an approximately rectangular parallelepiped outer shape and is equipped with a transfer machine 9 for transferring the wafer 8. On the front side of the transfer chamber 11, a storage chamber 13 for storing a pod (hoop) 12 for storing a plurality of wafers 8 is connected. The storage chamber 13, the processing modules 2A and 2B, and the transfer chamber 11 have an outer diameter based on a polyhedron composed of planes orthogonal to each other, are each configured to be detachable, and their connection parts have appropriate airtightness. An I / O port 14 is installed on the front surface of the storage chamber 13, and the pod 12 is carried in and out of the inside and outside of the substrate processing apparatus 1 through the I / O port 14. Further, the storage chamber 13 is provided with a load port 16 such as FIMS (Front-opening Interface Mechanical Standard) connected to the front of the transfer chamber 11 to open and close the pod 12. The wafer 8 taken out from the pod 12 is handled in the transfer chamber 11 and the transfer chambers 5A and 5B that constitute a mini-environment.

[0013] At the boundary wall (adjacent surface) between the transfer rooms 5A and 5B and the transfer chamber 11, a first gate valve 15A (gate valve 15A) and a second gate valve 15B (gate valve 15B) for loading the wafer (substrate) 8 between them are respectively installed. Pressure detectors are respectively installed in the transfer chamber 11 and the transfer rooms 5A and 5B, and the pressure in the transfer chamber 11 is set to be lower than the pressure in the transfer rooms 5A and 5B. Also, oxygen concentration detectors are respectively installed in the transfer chamber 11 and the transfer rooms 5A and 5B, and the oxygen concentration in the transfer chamber 11 and the transfer rooms 5A and 5B is maintained lower than the oxygen concentration in the atmosphere. A clean unit 17 for supplying clean air into the transfer chamber 11 is installed on the ceiling of the transfer chamber 11, and it is configured to circulate, for example, an inert gas as the clean air in the transfer chamber 11. By circulating and purging the inside of the transfer chamber 11 with an inert gas, the inside of the transfer chamber 11 can be made into a clean atmosphere. With such a configuration, it is possible to suppress the intrusion of particles, etc. in the transfer rooms 5A and 5B into the transfer chamber 11, and it is possible to suppress the formation of a natural oxide film on the wafer 8 in the transfer chamber 11 and the transfer rooms 5A and 5B.

[0014] Since the processing modules 2A and 2B have substantially the same (plane-symmetric) configuration except for the details, in the following, only the first processing module will be described as a representative.

[0015] As shown in FIG. 4, the processing furnace 4A includes a cylindrical first processing container 18A (reaction tube 18A) and a first heater 19A (heater 19A) as heating means (heating mechanism) installed on the outer periphery of the reaction tube 18A. The reaction tube 18A is formed of, for example, quartz (Si) or silicon carbide (SiC). Inside the reaction tube 18A, a first processing chamber 21A (processing chamber 21A) for processing the wafer 8 as a substrate is formed. Also, a first temperature detection unit 22A as a temperature detector is erected along the inner wall of the reaction tube 18A in the reaction tube 18A.

[0016] The gas used for substrate processing is supplied into the processing chamber 21A by a first gas supply mechanism 23A as a gas supply system. The gas supplied by the gas supply mechanism 23A is changed according to the type of film to be formed. Here, the gas supply mechanism 23A includes a raw material gas supply section, a reaction gas supply section, and an inert gas supply section. The gas supply mechanism 23A is housed in a first supply box 24A (gas box) described later.

[0017] The raw material gas supply section includes a gas supply pipe 25a. In the gas supply pipe 25a, a mass flow controller (flow control section) MFC 26a and a valve 28a which is an on-off valve are provided in sequence from the upstream direction. The gas supply pipe 25a is connected to a nozzle 29a that penetrates the side wall of a first manifold 27A (manifold 27A). The nozzle 29a stands upright in the reaction tube 18A along the vertical direction, and a plurality of supply holes are formed that open toward the wafer 8 held by a first boat 31A (boat 31A). The raw material gas is supplied to the wafer 8 through the supply holes of the nozzle 29a.

[0018] Hereinafter, with a similar configuration, the reaction gas is supplied to the wafer 8 from the reaction gas supply section via a gas supply pipe 25b, MFC 26b, valve 28b, and nozzle 29b. The inert gas is supplied to the wafer 8 from the inert gas supply section via gas supply pipes 25c, 25d, MFCs 26c, 26d, valves 28c, 28d, and nozzles 29a, 29b.

[0019] A cylindrical manifold 27A is connected to the lower end opening of the reaction tube 18A via a seal member such as an O-ring, and supports the lower end of the reaction tube 18A. The lower end opening of the manifold 27A is arranged corresponding to the ceiling of the transfer chamber 5A, and is opened and closed by a disk-shaped first lid portion 32A (lid portion 32A). A seal member such as an O-ring is installed on the upper surface of the lid portion 32A, whereby the reaction tube 18A and the outside air are hermetically sealed. A first heat insulating portion 33A (heat insulating portion 33A) is placed on the lid portion 32A.

[0020] The manifold 27A is formed with a first exhaust port 30A (exhaust port 30A) that extends in a direction orthogonal to the axis, that is, in a direction orthogonal to the tube axis of the reaction tube 18A, and a first exhaust pipe 34A is attached via the exhaust port 30A. The exhaust pipe 34A is connected to a first booster pump 38A as a vacuum exhaust device via a first pressure sensor 35A (pressure sensor 35A) as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 21A and a first conductance variable valve 36A as a pressure regulator (pressure regulation unit). Incidentally, the conductance variable valve 36A is a two-stage valve configured by connecting two valves, an APC (AutoPressure Controller) valve and a gate valve, in series. Further, the APC valve is a butterfly valve that can be opened with a flow path cross-sectional area equal to or larger than the cross-sectional area of the exhaust pipe 34A. With such a configuration, the pressure in the processing chamber 21A can be set to a processing pressure according to the process. Mainly, the exhaust pipe 34A, the pressure sensor 35A, and the conductance variable valve 36A constitute an exhaust system 39A as a first exhaust system. The exhaust system 39A can be housed in a first exhaust box 40A (exhaust box 40A) described later.

[0021] The processing chamber 21A houses therein a boat 31A as a substrate holder that vertically supports a plurality of, for example, 10 to 150 wafers 8 in a shelf-like manner. The boat 31A is supported above the heat insulating portion 33A by a first rotating shaft 41A (rotating shaft 41A) that penetrates the lid portion 32A and the heat insulating portion 33A. The rotating shaft 41A is connected to a first rotating mechanism 42A (rotating mechanism 42A) installed below the lid portion 32A, and the rotating shaft 41A is configured to be rotatable in a state where the inside of the reaction tube 18A is hermetically sealed. The lid portion 32A is driven in the vertical direction by a first boat elevator 43A (boat elevator 43A) as a lifting mechanism. Thereby, the boat 31A and the lid portion 32A are integrally lifted and lowered, and the boat 31A is carried into and out of the reaction tube 18A.

[0022] The transfer of the wafer 8 to the boat 31A is performed in the transfer chamber 5A. As shown in FIG. 3, on one side surface of the transfer chamber 5A (the outer side surface of the transfer chamber 5A, the side surface opposite to the side surface facing the transfer chamber 5B), a first clean unit 44A (clean unit 44A) is installed, and it is configured to circulate clean air (for example, inert gas) in the transfer chamber 5A. The inert gas supplied into the transfer chamber 5A is exhausted from the transfer chamber 5A by a first exhaust portion 45A (exhaust portion 45A) installed on the side surface (the side surface facing the transfer chamber 5B) facing the clean unit 44A across the boat 31A, and is re-supplied from the clean unit 44A into the transfer chamber 5A (circulation purge). The pressure in the transfer chamber 5A is always set to be lower than the pressure in the transfer chamber 11. This prevents particles and pollution sources in the transfer chamber 5A from being brought into the transfer chamber 11 and spreading contamination. Also, the oxygen concentration in the transfer chamber 5A is set to be lower than the oxygen concentration in the atmosphere.

[0023] A controller 46 for controlling the rotation mechanism 42A, the boat elevator 43A, the MFCs 38a to 38d of the gas supply mechanism 23A, the valves 28a to 28d, and the conductance variable valve 36A is connected thereto. The controller 46 is composed of, for example, a microprocessor (computer) equipped with a CPU, and is configured to control the operations of the processing modules 2A and 2B. An input / output device 47 configured as, for example, a touch panel or the like is connected to the controller 46. The controller 46 may be installed one by one in the processing module 2A and the processing module 2B respectively, or may be installed commonly as one.

[0024] A storage unit 48 as a storage medium is connected to the controller 46. In the storage unit 48, a control program for controlling the operation of the substrate processing apparatus 1 and a program (also referred to as a recipe) for causing each component of the substrate processing apparatus 1 to execute processing according to processing conditions are stored in a readable manner.

[0025] The storage unit 48 may be a storage device (hard disk or flash memory) built into the controller 46, or a portable external storage device (magnetic tape, magnetic disk such as flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card). Also, the program may be provided to the computer using communication means such as a dedicated line of the Internet. The program is read from the storage unit 48 according to an instruction from the input / output device 47 or the like as necessary, and the controller 46 executes processing according to the read recipe, so that the substrate processing apparatus 1 executes desired processing under the control of the controller 46. The controller 46 is housed in a control box (not shown) provided at an arbitrary location of the substrate processing apparatus 1.

[0026] Next, the rear configuration of the substrate processing apparatus 1 will be described.

[0027] As shown in Fig. 1, on the back side of the transfer chambers 5A and 5B, a first maintenance port 51A and a second maintenance port 51B (maintenance ports 51A and 51B) are respectively formed. The maintenance port 51A is formed to be biased toward the transfer chamber 5B side and has a width and height that allow the reaction tube 18A and the boat 31A to be carried in and out. The maintenance port 51B is formed to be biased toward the transfer chamber 5A side and has a width and height that allow the reaction tube 18B and the boat 31B to be carried in and out. The maintenance ports 51A and 51B are opened and closed by a first maintenance door 52A (maintenance door 52A) and a second maintenance door 52B (maintenance door 52B). The maintenance doors 52A and 52B are configured to be rotatable about a first hinge 53A (hinge 53A) and a second hinge 53B (hinge 53B). The hinge 53A is installed on the transfer chamber 5B side of the transfer chamber 5A, and the hinge 53B is installed on the transfer chamber 5A side of the transfer chamber 5B. That is, the hinge 53A and the hinge 53B are installed adjacent to each other near the inner corner located on the adjacent surface on the back side of the transfer chamber 5A and the transfer chamber 5B. Thus, a maintenance area for performing maintenance on the transfer chamber, the processing furnace, etc., is formed between the side of the processing module 2B on the back of the processing module 2A and the side of the processing module 2A on the back of the processing module 2B.

[0028] When the maintenance doors 52A and 52B are horizontally rotated rearward on the back side of the transfer chambers 5A and 5B about the hinges 53A and 53B, the maintenance ports 51A and 51B are opened. The maintenance doors 52A and 52B are configured to be rotatable by 90 degrees or more, more preferably about 180°. By rotating nearly 180°, one of the maintenance doors 52A and 52B overlaps the other when opened, without interfering with the maintenance work.

[0029] Proximity to the back surfaces of the processing modules 2A and 2B, a first utility system 54A (utility system 54A) and a second utility system 54B (utility system 54B) extending rearward are installed. The utility systems 54A and 54B are arranged symmetrically with respect to each other across a maintenance area. When performing maintenance on the utility systems 54A and 54B, it is carried out from the inside of the utility systems 54A and 54B, that is, from the space (maintenance area) between the utility systems 54A and 54B. The utility systems 54A and 54B have supply boxes 24A and 24B, exhaust boxes 40A and 40B, and booster pumps 38A and 38B. The maintenance ports of each box of the utility systems 54A and 54B are formed on the inner side (maintenance area side) respectively. That is, the maintenance ports of each box of the utility systems 54A and 54B are formed facing each other.

[0030] Since the utility systems 54A and 54B have substantially the same configuration except for details, in the following, only the utility system 54A will be described as a representative. The supply box 24A is arranged adjacent to a portion near the outer side of the back surface of the transfer chamber 5A. The exhaust box 40A is arranged adjacent to a portion near the outer side of the back surface of the processing furnace 4A. That is, the outer side surfaces of the supply box 24A and the exhaust box 40A are positioned flatly (smoothly) so as to be substantially continuously connected to the outer side surface of the transfer chamber 5A. Also, the supply box 24A and the exhaust box 40A are adjacent to each other in the vertical direction. The back surfaces of the supply box 24A and the exhaust box 40A are substantially in the same plane.

[0031] The booster pump 38A is arranged adjacent to the back surfaces of the supply box 24A and the exhaust box 40A. The booster pump 38A can be housed in a housing (frame) having an approximately rectangular parallelepiped contour and installed on a first pedestal 55A (pedestal 55A) having a predetermined height. The pedestal 55A has four swivel casters 64A on the bottom surface and is configured to be movable on the floor. During operation, the pedestal 55A is fixed to the floor surface with bolts, and the booster pump 38A is fixed to the pedestal 55A with bolts. The same applies to the booster pump 38B.

[0032] The installation area (footprint) of the booster pump 38A and the pedestal 55A in the stacked state is less than 500×500 mm, while the height can reach 2500 mm. In the example shown in FIG. 7(A), it is configured such that the installation area is 450×450 mm, and its width is substantially equal to the maximum width of the utility system 54A. Also, the outer side surfaces of the booster pumps 38A and 38B are arranged so as not to protrude outside the outer side surfaces of the utility systems 54A and 54B, that is, the outer side surfaces of the exhaust boxes 40A and 40B and the outer side surfaces of the supply boxes 24A and 24B. Incidentally, the pedestals 55A and 55B may each be configured such that their heights can be changed. Also, the pedestals 55A and 55B can be provided with measures (vibration countermeasures) for absorbing vibrations such as vibrations from the booster pumps 38A and 38B and earthquakes.

[0033] As can be recognized from FIGS. 1, 3, and 5, the thickness of the supply box 24A (the lateral width when viewed from the front of the substrate processing apparatus 1) widens stepwise from the front side toward the rear side, and its maximum width is smaller than or equal to the thickness of the exhaust box 40A. On the other hand, the thickness of the exhaust box 40A is constant from the front side to the rear side, has a rectangular parallelepiped outer shape, and the exhaust pipe 34A horizontally penetrates through it in the front-rear direction. In other words, the exhaust boxes 40A and 40B protrude more toward the maintenance area side than the supply boxes 24A and 24B. By installing the wide exhaust box 40A substantially above the transfer chamber 5A, a wider lateral width of the maintenance area behind the maintenance door 52A of the transfer chamber 5A can be secured. That is, in a top view, since the distance between the supply boxes 24A and 24B is larger than the distance between the exhaust boxes 40A and 40B, a maintenance area with a width sufficient to take out the reaction tube 18A from the opened maintenance door 52A is secured. The floor box 67A is installed on the floor of the entire maintenance area and houses an exhaust duct, a cooling water facility, electric cables, etc. The upper surface of the floor box 67A is flat and lower than the lower end of the maintenance door. The floor box 67A may have one or more hard points that serve as fulcrums during maintenance of heavy objects.

[0034] As shown in FIGS. 3 and 5, the supply box 24A accommodates most of the first gas supply mechanism 23A below the exhaust box 40A. The gas supply pipes 25a and 25b extend outside the supply box 24A, pass between the exhaust box 40A and the exhaust pipe 34A, and are connected to valves 28a and 28b arranged in the exhaust box 40A, and their tips are further routed to nozzles 29a and 29b. In another configuration, the gas supply mechanism 23A may have a height capable of accommodating the valves 28a and 28b, and depressions may be formed on the inner side surface to avoid interference with the exhaust box 40A (exhaust pipe 34A). Alternatively, the exhaust box 40A may be eliminated, and the exhaust pipe 34A may be arranged to penetrate the supply box 24A. That is, the exhaust box 40A does not necessarily have to be box-shaped, does not have to be surrounded, and does not have to have a clear boundary with other boxes or the like. In that sense, the exhaust box 40A is a space for accommodating the exhaust system even and that's all. Even in that case, the exhaust pipe 34A is arranged closer to the outside at a height avoiding the maintenance door 52A. In FIG. 5, the exhaust pipe 34A is provided above the maintenance door 52A, but the exhaust pipe 34A may also be provided below the maintenance door 52A.

[0035] Here, the exhaust port 30A facing rearward and the first intake port 56A formed facing forward in the booster pump 38B are opposed or substantially opposed. Also, the heights of the exhaust port 30A and the intake port 56A are the same or substantially the same. Therefore, the exhaust pipe 34A penetrates through the inside of the utility system 54A in a substantially straight line and substantially horizontally to connect the exhaust port 30A and the first intake port 56A. When the respective extension axes of the exhaust port 30A and the first intake port 56A are offset, the exhaust pipe 34A can be gently curved. The exhaust pipe 34A in this example extends slightly straight backward from the exhaust port 30A having a nominal diameter of about 100 mm, then has a gentle curve section facing outside the substrate processing apparatus 1, a taper section where the nominal diameter expands from 100 mm to 200 mm, a gentle curve section facing inside the substrate processing apparatus 1, and a straight pipe section that coincides with the extension axis of the intake port 56A, which are sequentially connected. In the straight pipe section, an APC valve corresponding to a nominal diameter of 200 mm, a shut-off gate valve, a maintenance gate valve, a bellows for isolating the exhaust pipe 34A from the vibration of the booster pump 38A, and an adapter for detachably connecting to the first intake port 56A are arranged in order from upstream to downstream. By arranging the exhaust pipe 34 substantially horizontally in this way, the piping length of the exhaust pipe 34 can be shortened, so the conductance can be improved. The exhaust box 40A in this example is formed such that its height is larger than its width in order to accommodate the vertically long gate valve, and accommodates only the straight pipe section of the exhaust pipe 34A. That is, there is a gap between the processing furnace 4A and the exhaust box 40A, and the portion between the exhaust port 30A of the exhaust pipe 34A and the straight pipe section can be exposed.

[0036] Next, with reference to FIGS. 6 and 7, the booster pump 38A will be further described. The booster pump 38A in this embodiment is configured to be installed vertically. By installing it vertically, the footprint (installation area) is reduced.

[0037] The booster pump 38A is composed of a main body (casing) 61A having a space (rotor chamber) inside, one or more rotors 59A rotating within the main body 61A, an exhaust pipe 34A, an intake port 56A provided on the upper side surface of the main body 61A and connected to the exhaust pipe 34A, a first exhaust port 62A provided at the lower part of the side surface of the main body 61A for exhausting gas, a motor 58A for rotating the rotating shaft 57A of the rotor 59A, a first pump controller 63A for controlling the motor 58A, and auxiliary equipment (not shown) for supplying ballast gas, cooling water, etc. Incidentally, the pump controller 63A and the auxiliary equipment are provided, for example, in the pedestal 55A, and their operation parts and display parts can be provided on the side surface.

[0038] Also, a first gas flow path 65A (gas flow path 65A) is formed by the intake port 56A, the exhaust port 62A, and an intermediate chamber that moves between the main body 61A and the rotor 59A. The gas introduced from the intake port 56A is configured to flow through the gas flow path 65A and be discharged from the exhaust port 62A. The intake port 56A opens orthogonally to the rotating shaft 57A so as to directly face the rotor chamber, the exhaust port 62A opens on the side surface on the same or opposite side as the intake port 56A, and is connected to the intake port of an auxiliary exhaust device (not shown) such as a rotary pump.

[0039] Since the rotating shaft 57A is arranged to extend in the vertical direction, the main body 61A is vertically long. The main body 61A is made of cast iron and has a large weight. By providing the motor 58A on the main body 61A, the center of gravity of the booster pump 38A can be made as low as possible, and the booster pump 38A can be stably installed.

[0040] The rotor 59A driven by the rotating shaft 57A has a two-stage roots type consisting of a plurality of rotors, for example, two rotors. The gas sucked from the intake port 56A through the exhaust pipe 34A is introduced into the exhaust port 62A while rotating in the gas flow path 65A along with the rotation of the rotor 59A. Here, the intake port 56A is provided on the upper side surface of the main body 61A, and the exhaust port 30A and the intake port 56A are at the same or substantially the same height. Therefore, since the shape of the exhaust pipe 34A can be linear and horizontally arranged, the distance between the exhaust port 30A and the intake port 56A can be minimized, and the exhaust capacity of the booster pump 38A can be maximally utilized. On the other hand, by providing the exhaust port 62A at the lower part of the main body 61A, for example, the routing of the pipe to the main pump installed on the lower floor can be shortened. Incidentally, when the exhaust port 30A and the exhaust port 62A are at the same height or substantially the same height, the exhaust port 62A may be used as the intake port and the intake port 56A may be used as the exhaust port.

[0041] Also, a gate valve may be provided at the intake port 56A. Thereby, during maintenance, even if the atmosphere in the exhaust pipe 34A is opened and in some cases of film types, dangerous gases such as HCl are generated due to reaction with the atmosphere and moisture, the intake port 56A can be closed, so that the danger during maintenance can be prevented.

[0042] Also, since the booster pump 38A is provided on the pedestal 55A, by appropriately selecting pedestals 55A with different heights or by adjusting the height of the pedestal 55A, the center height of the intake port 56A can be made the same as the center height of the exhaust port 30A. As a result, there is no bend for changing the height, and an exhaust pipe 34A (exhaust system 39A) with the maximum conductance connecting the exhaust port 30A and the intake port 56A separated by the depth length of the supply box 24A at the shortest distance can be realized.

[0043] Next, using the substrate processing apparatus 1 described above, a process of forming a film on a substrate (film forming process) will be described. Here, an example of forming a film on the wafer 8 by supplying gas A as a source gas and gas B as a reaction gas will be described. In the following description, the operations of each part constituting the substrate processing apparatus 1 are controlled by the controller 46.

[0044] (Wafer Charge and Boat Load) The gate valve 15A is opened, and the wafer 8 is transferred to the boat 31A. When a plurality of wafers 8 are loaded (wafer charge) into the boat 31A, the gate valve 15A is closed. The boat 31A is carried into (boat load) the processing chamber 21A by the boat elevator 43A, and the lower opening of the reaction tube 18A is hermetically sealed (sealed) by the lid portion 32A.

[0045] (Pressure Adjustment and Temperature Adjustment) The processing chamber 21A is evacuated (depressurized) by the booster pump 38A so as to reach a predetermined pressure (vacuum degree). The atmosphere in the processing chamber 21A flows linearly or substantially linearly through the exhaust pipe 34 and is exhausted through the booster pump 38A. The pressure in the processing chamber 21A is measured by the pressure sensor 35A, and based on the measured pressure information, the conductance variable valve 36A is feedback controlled. Also, the wafer 8 in the processing chamber 21A is heated by the heater 19A so as to reach a predetermined temperature. At this time, based on the temperature information detected by the temperature detection unit 22A, the energization condition of the heater 19A is feedback controlled so that the processing chamber 21A has a predetermined temperature distribution. Also, the rotation of the boat 31A and the wafer 8 by the rotation mechanism 42A is started.

[0046] (Film Forming Process) [Source Gas Supply Step] When the temperature in the processing chamber 21A stabilizes at a preset processing temperature, gas A is supplied to the wafer 8 in the processing chamber 21A. Gas A is controlled by the MFC26a to have a desired flow rate, and is supplied into the processing chamber 21A through the gas supply pipe 25a and the nozzle 29a.

[0047] [Raw material gas exhaust process] Next, the supply of gas A is stopped, and the inside of the processing chamber 21A is evacuated by the booster pump 38A. The gas A in the processing chamber 21A flows linearly or substantially linearly through the exhaust pipe 34A and is exhausted through the booster pump 38A. At this time, N2 gas may be supplied into the processing chamber 21A as an inert gas from the inert gas supply section (inert gas purge).

[0048] [Reaction gas supply process] Next, gas B is supplied to the wafer 8 in the processing chamber 21A. Gas B is controlled by the MFC26b to have a desired flow rate and is supplied into the processing chamber 21A through the gas supply pipe 25b and the nozzle 29b.

[0049] [Reaction gas exhaust process] Next, the supply of gas B is stopped, and the inside of the processing chamber 21A is evacuated by the booster pump 38A. The gas B in the processing chamber 21A flows linearly or substantially linearly through the exhaust pipe 34A and is exhausted through the booster pump 38A. At this time, N2 gas may be supplied into the processing chamber 21A as an inert gas from the inert gas supply section (inert gas purge).

[0050] By performing the cycle of the above-described four processes a predetermined number of times (one or more times), a film having a predetermined composition and a predetermined film thickness can be formed on the wafer 8.

[0051] (Boat unloading and wafer discharge) After forming a film with a predetermined film thickness, N2 gas is supplied from the inert gas supply section, the inside of the processing chamber 21A is replaced with N2 gas, and the pressure inside the processing chamber 21A is restored to normal pressure. Thereafter, the lid portion 32A is lowered by the boat elevator 43A, and the boat 31A is carried out of the reaction tube 18A (boat unloading). Thereafter, the processed wafer 8 is taken out from the boat 31A (wafer discharge).

[0052] Thereafter, the wafer 8 may be stored in the pod 12 and carried out of the substrate processing apparatus 1, or may be transported to the processing furnace 4B, and substrate processing such as annealing may be continuously performed. When the wafer 8 is processed in the processing furnace 4B continuously after being processed in the processing furnace 4A, the gate valve 15A and the second gate valve 15B are opened, and the wafer 8 is directly transported from the boat 31A to the second boat 31B (boat 31B). The loading and unloading of the wafer 8 into and out of the processing furnace 4B thereafter is performed in the same procedure as the substrate processing by the above-described processing furnace 4A. Further, the substrate processing in the processing furnace 4B is performed, for example, in the same procedure as the substrate processing by the above-described processing furnace 4A.

[0053] When forming a silicon or silicon compound film on the wafer 8 using a silicon-containing gas as gas A or gas B, the following are exemplified as the processing conditions, for example. Processing temperature (wafer temperature): 300°C to 700°C Processing pressure (pressure in the processing chamber): 1 Pa to 4000 Pa

[0054] In addition, the processing modules 2A and 2B can be configured to form different films such as film A and film B. In that case, the configurations of the gas supply mechanisms 23A and 23B are also different, but the symmetry of the supply boxes 24A, 24B and the exhaust boxes 40A, 40B is maintained.

[0055] Next, the maintenance of the substrate processing apparatus 1 will be described. When the inside of the transfer chamber 5A is circulated and purged with an inert gas, an interlock is set so that the maintenance door 52A cannot be opened. Even when the oxygen concentration in the transfer chamber 5A is lower than the oxygen concentration at atmospheric pressure, an interlock is set so that the maintenance door 52A cannot be opened. The same applies to the maintenance door 52B. Furthermore, when the maintenance doors 52A and 52B are open, an interlock is set so that the gate valves 15A and 15B cannot be opened. When the gate valves 15A and 15B are to be opened with the maintenance doors 52A and 52B open, the entire substrate processing apparatus 1 is set to the maintenance mode, and by turning on a separately installed maintenance switch, the interlock regarding the gate valves 15A and 15B is released, and the gate valves 15A and 15B can be opened.

[0056] When opening the maintenance door 52A, in order to raise the oxygen concentration in the transfer chamber 5A to be equal to or higher than the oxygen concentration in the atmosphere, preferably up to the oxygen concentration in the atmosphere, an atmospheric atmosphere is allowed to flow from the clean unit 44A into the transfer chamber 5A. At this time, in order to prevent the pressure in the transfer chamber 5A from becoming higher than the pressure in the transfer chamber 11, the circulation purge in the transfer chamber 5A is released, the atmosphere in the transfer chamber 5A is exhausted outside the transfer chamber 5A, the rotation speed of the fan of the clean unit 44A is reduced from the rotation speed during circulation purge, and the inflow amount of the atmosphere into the transfer chamber 5A is controlled. By controlling in this way, while raising the oxygen concentration in the transfer chamber 5A, the pressure in the transfer chamber 5A can be maintained lower than the pressure in the transfer chamber 11.

[0057] When the oxygen concentration in the transfer chamber 5A becomes equal to the oxygen concentration in the atmospheric pressure, the interlock is released and the maintenance door 52A can be opened. At this time, even if the oxygen concentration in the transfer chamber 5A is equal to the oxygen concentration in the atmospheric pressure, if the pressure in the transfer chamber 5A is higher than the pressure in the transfer chamber 11, the maintenance door 52A is set not to be opened. When the maintenance door 52A is opened, the rotation speed of the fan of the clean unit 44A is increased to be at least greater than the rotation speed during circulation purge. More preferably, the rotation speed of the fan of the clean unit 44A is maximized.

[0058] After releasing the maintenance door 52A, for example, the stage of the carriage is entered into the transfer chamber 5A through the maintenance port 51A, and the reaction tube 18A and the boat 31A are carried in and out of the transfer chamber 5A through the carriage. At this time, the exhaust port 30A and the exhaust pipe 34A are located above the maintenance port 51A so as not to interfere with the carriage and the reaction tube 18A being carried in and out.

[0059] Maintenance in the transfer chamber 11 is performed from the maintenance port 50 formed in the front of the transfer chamber 11 and in a portion where the pod opener is not installed. The maintenance port 50 is configured to be opened and closed by a maintenance door (not shown). As described above, when the entire substrate processing apparatus 1 is in the maintenance mode, the gate valves 15A and 15B can be opened and maintenance can be performed from the gate valve 15A and 15B sides. That is, maintenance in the transfer chamber 11 can be performed from either the front or the back of the apparatus.

[0060] As described above, in this embodiment, booster pumps 38A and 38B are provided at positions adjacent to the exhaust boxes 40A and 40B such that the exhaust ports 30A and 30B and the intake ports 56A and 56B face or substantially face each other and are at the same height. Therefore, the linear exhaust pipes 34A and 34B (not shown) are arranged horizontally, and the booster pumps 38A and 38B can be connected to the reaction pipes 18A and 18B at the shortest distance. Thus, the exhaust capacity of the booster pumps 38A and 38B can be maximally exerted, the exhaust efficiency (exhaust speed) can be improved while suppressing the reduction of the machine difference, and the reduction of the COO can also be achieved.

[0061] Also, since the linear exhaust pipes 34A and 34B are used, the gas exhausted from the reaction pipes 18A and 18B is in fluid communication substantially linearly between the exhaust ports 30A and 30B and the intake ports 56A and 56B. Therefore, no pressure loss occurs in the exhausted gas during the process of flowing through the exhaust pipes 34A and 34B, and the exhaust efficiency can be improved.

[0062] Also, the booster pumps 38A and 38B improve the exhaust speed in a pressure region (for example, 1 Pa to 1 kPa) where the exhaust speed of the auxiliary exhaust device decreases. When a positive displacement pump is used as the booster pump, its exhaust speed is determined by the rotational speed of the rotor except near the ultimate vacuum degree. Therefore, the variation in the exhaust speed is also reduced compared to the case where only the auxiliary exhaust device is used. As the booster pumps 38A and 38B, in addition to the roots type, various mechanical booster pumps such as rotary vane type (axial flow type), screw type, and scroll type can be used, and furthermore, momentum transfer type pumps such as turbo molecular pumps and ejectors can also be used.

[0063] Also, the booster pumps 38A and 38B are configured to be vertically installed with an installation area of less than 500×500 and are arranged so as not to protrude outward from the outer side surfaces of the utility systems 54A and 54B. Therefore, the footprint of the substrate processing apparatus 1 can be reduced.

[0064] Furthermore, booster pumps 38A and 38B are provided on pedestals 55A and 55B. Therefore, by appropriately selecting pedestals 55A and 55B with different heights or adjusting the heights of pedestals 55A and 55B, the heights of intake ports 56A and 56B can be adjusted. Also, since the pedestals 55A and 55B and the booster pumps 38A and 38B are fixed to the floor surface by fixing tools such as bolts, the booster pumps 38A and 38B can be prevented from tipping over.

[0065] Furthermore, a maintenance area is provided on the back surface of the substrate processing apparatus 1, and maintenance of the utility systems 54A and 54B can be performed from the maintenance area. Therefore, since it is not necessary to secure maintenance areas on both sides of the substrate processing apparatus 1, the footprint of the substrate processing apparatus 1 can be reduced, and the usage area of the clean room can be suppressed.

[0066] Also, by installing the utility systems 54A and 54B of the processing modules 2A and 2B facing each other on both outer side surfaces of the substrate processing apparatus 1, the space on the back surface of the substrate processing apparatus 1 can be used as a maintenance area common to the left and right processing modules 2A and 2B. For example, in a conventional apparatus, a supply box and an exhaust box may be installed facing each other at both ends of the apparatus back surface. When two apparatuses with such a configuration are arranged side by side, at the boundary line between the two apparatuses, one exhaust box and the other supply box will be adjacent to each other. In contrast, in this embodiment, since no utility system is arranged at the boundary line between the two processing modules 2A and 2B, a wide maintenance area can be secured.

[0067] Also, by providing the gate valves 15A and 15B, it becomes possible to perform maintenance on the other processing module 2A or 2B or in the transfer chamber 11 while performing substrate processing in one of the processing modules 2A and 2B. As a result, maintenance can be performed without stopping the film formation process, so the operating rate of the substrate processing apparatus 1 can be increased, and productivity can be improved.

[0068] Next, referring to FIGS. 10 and 11, the details of the periphery of the booster pump 38A, the exhaust system 39A, and the processing furnace 4A will be described. Since the booster pump 38A and the booster pump 38B, the exhaust system 39A and the exhaust system 39B, and the processing furnace 4A and the processing furnace 4B have the same configuration, hereinafter, only the booster pump 38A, the exhaust system 39A, and the processing furnace 4A will be described, and the description of the booster pump 38B, the exhaust system 39B, and the processing furnace 4B will be omitted. Also, hereinafter, when describing a member A, it is assumed that there is also a member B having the same configuration.

[0069] An exhaust box 40A as a piping housing is disposed adjacent to the booster pump 38A, and the processing furnace 4A is disposed adjacent to the exhaust box 40A. Further, the exhaust box 40A and the processing furnace 4A are connected via the exhaust system 39A, and the exhaust system 39A is housed and supported in the exhaust box 40A.

[0070] The exhaust system 39A includes an exhaust pipe 34A, a branch exhaust pipe 68A, a first gate valve 69A, a second gate valve 71A, a first APC valve 72A, and a second APC valve 73A. Note that the first APC valve 72A and the second APC valve 73A constitute a conductance variable valve 36A.

[0071] One end of the exhaust pipe 34A is connected to the intake port 56A of the booster pump 38A via a bellows 74A as a flexible portion. Further, the exhaust pipe 34A has a reduced diameter portion 77A whose diameter is reduced from the middle portion on the other end side, and the reduced diameter portion 77A is connected to the exhaust port 30A of the processing container 18A via a bellows 70A as a flexible portion. That is, the booster pump 38A and the processing chamber 21A inside the processing furnace 4A are configured to communicate with each other via the exhaust pipe 34A. Further, the exhaust pipe 34A is provided with a first gate valve 69A, a second gate valve 71A, and a first APC valve 72A in order from the booster pump 38A side.

[0072] The branch exhaust pipe 68A extends upward from between the first gate valve 69A and the second gate valve 71A of the exhaust pipe 34A, bends parallel to the exhaust pipe 34A toward the processing furnace 4A, further extends downward through the second APC valve 73A, and is connected between the first APC valve 72A and the reduced-diameter portion 77A of the exhaust pipe 34A. That is, a second APC valve 73A is provided in the middle of the branch exhaust pipe 68A. Therefore, by opening and closing the second gate valve 71A, it is possible to control whether to exhaust through the exhaust pipe 34A and the first APC valve 72A or through the branch exhaust pipe 68A and the second APC valve 73A.

[0073] In addition, the exhaust pipe 34A and the branch exhaust pipe 68A have a split structure in which a plurality of pipes of a predetermined shape are combined. That is, the exhaust pipe 34A and the branch exhaust pipe 68A have a plurality of sections that can be split. Each pipe is connected via an elastic seal member 80A provided so as to surround the periphery of the connection portion between the pipes.

[0074] The bellows 70A has a bellows structure and absorbs and permits displacement of the exhaust pipe 34A in the circumferential direction and the axial direction with respect to the processing vessel 18A. Similarly, the bellows 74A has a bellows structure and absorbs and permits displacement of the exhaust pipe 34A in the circumferential direction and the axial direction with respect to the booster pump 38A. Further, the bellows 74A has flange portions 75A protruding radially at both ends, and a shaft-like fixing member 76A (FIG. 11) can be hung and attached at a predetermined circumferential interval between the flange portions 75A. The fixing member 76A is, for example, a bolt and can be used to restrain the displacement of the bellows 74A at an arbitrary position during maintenance or the like. Further, the bellows 70A has a flange 91A at the end on the reduced-diameter portion 77A side, and a retainer 92A can be bridged between the flange 91A or the reduced-diameter portion 77A and the exhaust port 30A or the frame of the processing furnace 4. The retainer 92A bears the tensile load generated between both ends when the inside of the bellows 70A becomes vacuum, and is a vibration-damping fastener composed of a vibration-damping member such as a polymer resin, rubber, compression spring, or a vibration-damping alloy described later.

[0075] The exhaust box 40A has a frame 79A provided so as to span vertically, horizontally, and diagonally within the exhaust box 40A, and a casing 78A attached to the frame 79A and covering a part or all of the outside thereof. The casing 78A includes side wall panels that are substantially flush with the casings of the booster pump 38A and the treatment furnace 4A. The frame 79A has various components housed in the exhaust box 40A and may include a plurality of beams protruding toward the exhaust pipe 34A for fixing the exhaust pipe 34A and the branch exhaust pipe 68A in particular.

[0076] The exhaust pipe 34A and the branch exhaust pipe 68A are connected to the frame 79A via mounting brackets 81A described later and are supported by the frame 79A. The exhaust pipe 34A is mainly fixed to the frame 79A via the mounting bracket 81A around two branch portions mainly with the branch exhaust pipe 68A. Also, the branch exhaust pipe 68A is mainly fixed to the beam of the frame 79A via the mounting bracket 81A at the upward extension portion from the exhaust pipe 34A and the downward extension portion from the second APC valve 73A. That is, the connection portion between the exhaust pipe 34A and the frame 79A and the connection portion between the branch exhaust pipe 68A and the frame 79A are provided at multiple locations on the treatment chamber 21A side of the bellows 74A and the first gate valve 69A, respectively, and for each divided section.

[0077] The exhaust box 40A and the booster pump 38A, the exhaust box 40A and the treatment furnace 4A, and the treatment furnace 4A and the transfer chamber 5A may be connected by vibration-damping fasteners 90A formed of vibration-damping members such as rubber and resin. Also, the booster pump 38A may be installed on the floor via a vibration-damping member such as rubber and resin. Further, the exhaust pipe 34A and the branch exhaust pipe 68A may be maintained at a high temperature in order to prevent the accumulation of by-products inside, and may be equipped with heating wires and covered with a heat-insulating cover.

[0078] Referring to FIG. 12, the details of the connection portion between the exhaust pipe 34A and the frame 79A will be described. In FIG. 12, the exhaust pipe 34A is illustrated, but the branch exhaust pipe 68A is also connected to the frame 79A in the same manner as the exhaust pipe 34A.

[0079] At a predetermined position on the outer peripheral surface of the exhaust pipe 34, a mounting plate 82A extending in the radial direction is formed. For example, two long holes 83A that are long in the extending direction (vertical direction) are formed in the mounting plate 82A. Further, at the tip of the frame 79A, a mounting bracket 81A having an L-shaped cross section is provided, and a mounting surface 84A that is parallel to the mounting plate 82A and provided with screw holes is formed.

[0080] Between the mounting plate 82A and the mounting surface 84A, one or more vibration damping plates 87A as vibration damping portions are provided. The vibration damping plate 87A is a metal plate material having the same number and size as the long hole 83A and having a long hole 88A with the lower end released. When connecting the exhaust pipe 34A to the frame 79A, with the bolts 86A loosely screwed into the screw holes of the mounting surface 84A, after covering the long hole 88A of the vibration damping plate 87A with the bolts 86A, the bolts 86A are tightened while holding the exhaust pipe 34 at an appropriate height. Thereby, the vibration damping plate 87A is screwed to the mounting surface 84A integrally with the mounting plate 82A.

[0081] The vibration damping plate 87A is provided sandwiched between the mounting surface 84A (mounting bracket 81A) and the mounting plate 82A when the frame 79A and the exhaust pipe 34A are connected. Therefore, the vibration damping plate 87A supports all or part of the weight of the exhaust pipe 34 as a shear load in a direction parallel to the surface of the vibration damping plate 87A. That is, the shear load is perpendicular to the thickness direction of the vibration damping plate 87A. A part of the remaining weight of the exhaust pipe 34 can be supported by the bolts 86A, but that is small, and the vibration damping plate 87A substantially supports the entire load.

[0082] The vibration damping performance of the vibration damping plate 87A can be expressed by the logarithmic decrement δ, the specific damping capacity Ψ, the sharpness of resonance Q, the loss coefficient η, etc., and are defined as follows respectively: Ψ = ΔW / W, Q = ω0 / (ω2 - ω1) η = f1 / f2 Here, W is the mechanical energy related to vibration, and ΔW is the energy loss per cycle. Also, ω0, ω1, and ω2 are the resonance frequencies at the resonance peaks, the frequencies at which the vibration energy becomes half of the resonance peak value on the left side of the resonance peak, and the frequencies at which the vibration energy becomes half value on the right side of the resonance peak, respectively. Also, f1 and f2 are the forces at the maximum displacement and the force at zero displacement in the hysteresis loop represented by the stress-strain diagram, respectively. The logarithmic decrement is δ, and when the amplitude decays, it is defined by the ratio of adjacent amplitudes. When the logarithmic decrement is small (δ < 0.01), the relationship δ≒2Ψ≒πη≒2π / Q holds. The logarithmic decrement usually depends on the amplitude and frequency, but the maximum logarithmic decrement of the vibration damping plate 87A in this embodiment is larger than the logarithmic decrement of SUS304 stainless steel (about 0.02), which is common as a material for semiconductor manufacturing equipment, and preferably has a logarithmic decrement of 0.1 or more with respect to the vibration of the amplitude and frequency to be damped. The vibration damping plate 87A has the characteristic of dispersing the resonance points of vibration on the frequency axis and damping mechanical vibration.

[0083] In addition, as the material of the vibration damping plate 87A, for example, composite type, ferromagnetic type, transformation type, and twin type vibration damping alloys can be used. Composite type vibration damping alloys such as cast iron and aluminum-zinc alloys have the property of converting vibration into heat and absorbing and relaxing it by the viscoelastic body covering the phase boundary of the two-phase mixed structure.

[0084] Ferromagnetic type vibration damping alloys found in alloys showing magnetostriction such as nickel and chromium steel have the property that the crystals are randomly distorted in the direction of spontaneous magnetization within each magnetic domain, and when an external force is applied, the magnetic domains rotate in the direction of relaxing the stress to generate strain within the elastic limit of the material and contract when the external force is removed. When vibration occurs, the vibration damping alloy expands and contracts by repeatedly applying and removing the external force, generating a hysteresis loop to convert the vibration into heat and damping the vibration. Also, in the case of ferromagnetic type vibration damping alloys, the effect of vibration damping can be enhanced by coarsening the crystal grains by heat treatment to facilitate the movement of magnetic domain walls.

[0085] Transition damping alloys such as magnesium alloys have the property of damping vibrations due to the interaction between the transitions in the alloy and impurity atoms. When an external force is applied to the transitions pinned by impurity atoms, the transitions in the alloy overhang and move, and when the external force is removed, the transitions move back to their original positions. When vibrations occur, the transitions in the crystal move due to the repeated application and removal of the external force, generating a hysteresis loop that converts the vibrations into heat and damping the vibrations.

[0086] Twin-type damping alloys have the property of damping vibrations due to twins among the slips and twin deformations that occur to relieve martensite by heat treatment. Also, twin-type damping alloys can be further classified into two types: relaxation types such as twin copper-manganese alloys and hysteresis types such as copper-aluminum-nickel alloys. In the case of the relaxation type, twin boundaries in martensite have the property of converting vibrations into heat and absorbing and damping them at the twin interface due to an action similar to that of a composite phase boundary. Also, the hysteresis type has the property of generating a hysteresis loop that converts vibrations into heat and damping the vibrations by the twin interface moving irreversibly due to an external force by a mechanism similar to that of the transition type.

[0087] FIG. 13(A) is a graph showing the relationship between vibration and frequency when a damping plate 87A is not provided at the connection portion between the frame 79A and the exhaust pipe 34A, and FIG. 13(B) is a graph showing the relationship between vibration and frequency when a damping plate 87A made of an iron-aluminum alloy is provided at the connection portion between the frame 79A and the exhaust pipe 34A. In each graph, rectangular markers are added to the top 8 peaks.

[0088] As shown in FIG. 13(A), when the damping plate 87A is not provided, the resonance point 89A of the vibration concentrates in a specific narrow range on the frequency axis, and there is a risk of resonance occurring and the amplitude increasing. On the other hand, as shown in FIG. 13(B), when the vibration plate 87A is provided, the resonance point 89A of the vibration is dispersed on the frequency axis, so the amplitude can be decreased.

[0089] As described above, in this embodiment, when the exhaust pipe 34A is attached to the frame 79A, a vibration damping plate 87A as a vibration damping portion is provided between the attachment plate 82A of the exhaust pipe 34A and the attachment surface 84A of the frame 79A. Therefore, the vibration transmitted from the booster pump 38A to the exhaust pipe 34A is attenuated by the vibration damping plate 87A when it reaches the connection portion with the frame 79A, so that the vibration can be sufficiently attenuated in the process of being transmitted from the booster pump 38A to the processing furnace 4A via the exhaust pipe 34A.

[0090] Also, a bellows 74A is provided between the exhaust pipe 34A and the booster pump 38A, and the flange portions 75A of the bellows 74A are not fixed. Since the bellows 74A can absorb the displacement of the exhaust pipe 34A with respect to the booster pump 38A, it is possible to suppress large-amplitude vibration transmitted from the booster pump 38A to the exhaust pipe 34A.

[0091] Also, since the booster pump 38A and the exhaust box 40A are connected by a vibration-damping fastener 90A, it is possible to suppress the vibration transmitted from the booster pump 38A to the exhaust box 40A.

[0092] Also, since the vibration damping plate 87A is made of heat-resistant metal, the exhaust temperature from the processing furnace 4A can be increased without deteriorating the vibration damping plate. Alternatively, the heating temperature for the exhaust pipe 34A can be increased.

[0093] Furthermore, the vibration damping plate 87A has a long hole 88A with its lower end released, and can be directly attached to the vertical surface without using a suspension device. Therefore, the vibration damping plate 87A can be applied even when a large shear load that cannot be borne by rubber or resin acts.

[0094] In the present embodiment, the substrate processing apparatus 1 having two processing modules 2A and 2B has been described. However, the number of processing modules may be one or three. FIG. 8 shows a substrate processing apparatus 101 according to a first modification having three processing modules 2A, 2B, and 2C. Although not shown, a utility system similar to those of the processing modules 2A and 2B is provided for the processing module 2C.

[0095] The processing module 2C is provided at a position symmetric to the processing module 2B with respect to the transfer chamber 11. The processing module 2C and the transfer chamber 11 are communicated with each other via a gate valve 15C. Further, the processing module 2C and the storage chamber 13 are communicated with each other via a maintenance port 51C, and the maintenance port 51C can be hermetically closed by a maintenance door 52C. In the substrate processing apparatus 101, the storage chamber 13 is configured to be a maintenance area for the processing module 2C.

[0096] Further, FIG. 9 shows a substrate processing apparatus according to a second modification having one processing module 2. In the case of this substrate processing apparatus, a supply box 24 as a first utility system is provided near the back surface of the transfer chamber 5, and an exhaust box 40 and an electrical equipment box (not shown) as a second utility system are provided to face the supply box 24 with a maintenance area interposed therebetween. The maintenance ports of the supply box 24 and the exhaust box 40 are formed to face each other.

[0097] A booster pump 38 is arranged adjacent to the side of the supply box 24 opposite to the side adjacent to the transfer chamber 5. The exhaust box 40 and the booster pump 38 are connected by a linear exhaust pipe 34 horizontally arranged in the air. In the case of this substrate processing apparatus, the intake port of the booster pump 38 is not opposed to the exhaust port of the manifold, but is configured to have the same height.

[0098] FIG. 14 shows a substrate processing apparatus 131 according to Modification Example 3 having three processing modules. The three processing modules 2A, 2B, and 2C are arranged side by side continuously in the lateral direction on the back side of the transfer chamber 11. The processing modules 2A and 2B and the corresponding utility systems 54A and 54B are arranged symmetrically with respect to a plane. The processing modules 2B and 2C and the corresponding utility systems 54B and 54C are arranged symmetrically with respect to a plane so as to be adjacent to each other on a side surface not facing the maintenance area. The transfer chamber 11 has a lateral width corresponding to the sum of the lateral widths of the three processing modules 2A, 2B, and 2C.

[0099] The substrate processing apparatus 131 can also be configured in an arrangement (referred to as Arrangement B) that is in a mirror image relationship with the arrangement shown in FIG. 14 (referred to as Arrangement A). By alternately arranging the apparatuses of Arrangement A and Arrangement B in the lateral direction, the maintenance area behind the processing module 2C of the substrate processing apparatus 131 of Arrangement A and the maintenance area behind the processing module 2C of the substrate processing apparatus 131 of Arrangement B form a continuous single space. This space has a width sufficient to remove and attach the processing module 2C through the maintenance door 51C, similar to the maintenance area between the utility systems 54A and 54B. In this way, when the cluster-type substrate processing apparatus 131 is paired with Arrangement A and Arrangement B, a configuration is realized in which access from the side of the apparatus is not required for each pair, and the productivity per footprint can be improved.

[0100] FIGS. 15 and 16 show a substrate processing apparatus 141 according to Modification Example 4 having three processing modules. The three processing modules 2A, 2B, and 142 have substantially equal lateral widths or lateral widths of 1 m or less and are arranged side by side in the lateral direction on the back side of the transfer chamber 11. The processing module 142 includes a housing 144 that houses a single-wafer chamber for radically processing the wafers 8 stored one by one, and a lower chamber 145 that communicates with the single-wafer chamber and forms a space for loading and unloading the wafers 8 into and out of the single-wafer chamber. The susceptor 146 moves up and down between the single-wafer chamber and the lower chamber 145 while supporting the wafers 8.

[0101] The processing module 142 can expose the wafer 8 to radicals such as oxygen, nitrogen, hydrogen, or rare gas, and perform modification or treatment processes such as isotropic oxidation. For example, in a continuous process of forming an oxide film on the wafer 8 with the processing module 2A and then forming a nitride film with the processing module 2B, a short-time treatment by the processing module 142 can be interposed before forming the nitride film to improve the properties of the film interface. At this time, the wafer 8 can be transported in the order of the processing modules 2A, 142, and 2B without exiting the transfer chamber 11. In addition, a cassette or a cooling station for temporarily holding the wafer 8 may be installed in a space not used for transportation in the transfer chamber 11. The substrate processing apparatus 141 can achieve high throughput with high transportation efficiency.

[0102] The utility system 143 is auxiliary equipment of the processing module 142, has a vertically long box-shaped outer shape, and is arranged adjacent to the back surface of the housing 144. The utility system 143 houses a supply box 147 for storing valves and the like for supplying gas to the single-wafer chamber, a high-frequency power supply 148 for supplying high-frequency power for generating plasma in the single-wafer chamber, and an exhaust system 149 including exhaust pipes for evacuating the single-wafer chamber and the lower chamber 145. The utility system 143 can have wheels such as swivel casters at the bottom and be configured to be movable in the front-rear direction.

[0103] In a general apparatus having a cluster of single-wafer chambers, a structure that supports the entire single-wafer chamber so as to be rotatable with a vertical pivot provided at a corner is often used to make each single-wafer chamber maintainable. The processing module 142 of the substrate processing apparatus 141 installed alone has its back surface and one side surface facing a space with sufficient width, and the pivot can be omitted. Also, the substrate processing apparatus 151 can alternately arrange the apparatuses in the arrangement shown in FIG. 15 (referred to as arrangement A) and the arrangement in a mirror image relationship thereto (referred to as arrangement B) in the horizontal direction.

[0104] Figures 17 and 18 show a cluster-type substrate processing apparatus 151 of Modification Example 5 having three processing modules. The three processing modules 2A, 2B, and 152 have substantially equal widths or widths of 1 m or less and are arranged side by side in the lateral direction on the back side of the transfer chamber 11. The processing module 152 has a housing 154 that houses a cavity for annealing a plurality of wafers 8 with electromagnetic waves.

[0105] The utility system 155 is an accessory facility of the processing module 152 and is arranged adjacent to the back and bottom surfaces of the housing 154, and houses a microwave generator 155, a supply box 157, a power supply device 158, and an exhaust system 159. The microwave generator 155 generates microwaves in the range from 2.45 to 27 GHz and radiates them into the cavity. The supply box 157 stores valves and the like for supplying a processing gas to the single-wafer chamber. The power supply device 158 supplies the power necessary for the microwave generator 155. The exhaust system 159 includes an exhaust pipe and an exhaust valve for exhausting the inside of the cavity.

[0106] The processing module 152 generates a standing wave of microwaves in the cavity while holding the wafers 8 in one or two rotating boats 156 in the cavity. Since the microwaves specifically and rapidly heat a specific solid-phase film or impurities formed on the wafer 8, it is possible to perform a predetermined heat treatment such as annealing while avoiding excessive heating of other films and the wafers 8. For example, in a continuous process of forming film A on wafer 8 by processing module 2A and then forming film B by processing module 2B, annealing by processing module 152 is interposed before the formation of film B, so that the properties of the film already formed on wafer 8 can be modified, or the quality of the film to be formed can be improved.

[0107] The processing module 152 can be mounted on the utility system 143. The utility system 143 has wheels such as swivel casters at the bottom and can be configured to be movable in the front-rear direction while carrying the processing module 152. An operator can enter the transfer chamber 11 from the maintenance port 50 and can separate and connect the transfer chamber 11 and the gate valve 15C.

[0108] As described above, the embodiments of the present disclosure have been specifically described. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0109] For example, in the above-described embodiment, an example in which a silicon-containing gas is used as the source gas has been described. However, the present disclosure is not limited to such a mode. As the silicon-containing gas, inorganic halosilane source gases such as MCS (SiH3 Cl: monochlorosilane) gas, DCS (dichlorosilane) gas, TCS (SiHCl3: trichlorosilane) gas, HCD (Si2 Cl6: hexachlorodisilane) gas, etc., and halogen group-free amino-based (amine-based) silane source gases such as 3DMAS (Si[N(CH3 )2 ]3H: tris(dimethylamino)silane) gas, BTBAS (SiH2 [NH(C4 H9 )]2: bistert-butylaminosilane) gas, and halogen group-free inorganic silane source gases such as MS (SiH4: monosilane) gas, DS (Si2 H6: disilane) gas can be used.

[0110] Further, as the reaction gas, one or more gases selected from oxygen-containing gases (oxidizing gases) such as oxygen or ozone gas, nitrogen (N)-containing gases (nitriding gases) such as ammonia (NH3 ) gas, carbon (C)-containing gases such as propylene (C3 H6 ) gas, boron (B)-containing gases such as boron trichloride (BCl3 ) gas, etc. can be used to form SiN films, SiON films, SiOCN films, SiOC films, SiCN films, SiBN films, SiBCN films, etc. Even when these film formations are performed, film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effects as in the above-described embodiment can be obtained.

[0111] For another example, the present disclosure is also preferably applicable when forming a film containing metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), etc. on the wafer 8, that is, when forming a metal-based film.

[0112] In the above-described embodiments, an example of depositing a film on the wafer 8 has been described. However, the present disclosure is not limited to such a mode. For example, the present disclosure is also preferably applicable when performing processes such as oxidation treatment, diffusion treatment, annealing treatment, and etching treatment on the wafer 8 or the film formed on the wafer 8.

[0113] Furthermore, the above-described embodiments and modified examples can be used in appropriate combinations. The processing conditions at this time can be, for example, the same as those in the above-described embodiments and modified examples.

[0114] (Supplementary Note) Furthermore, the present disclosure includes the following embodiments.

[0115] (Supplementary Note 1) A substrate processing apparatus including a first processing module having a first processing container for substrate processing and a substrate loading port provided on the front side, a second processing module disposed in proximity to the side surface of the first processing module and having a second processing container for substrate processing, a first supply system for supplying a processing gas into the first processing container, a first utility system disposed in proximity to the back surface of the first processing module, a second supply system for supplying a processing gas into the second processing container, a second utility system disposed in proximity to the back surface of the second processing module, a first vacuum exhaust device disposed behind the first processing module for exhausting the inside of the first processing container, and a second vacuum exhaust device disposed behind the second processing module for exhausting the inside of the second processing container, wherein the outer side surfaces of the first vacuum exhaust device and the second vacuum exhaust device are configured not to protrude outside the outer side surfaces of the first utility system and the second utility system, respectively.

[0116] (Supplementary Note 2) The substrate processing apparatus according to Supplementary Note 1, wherein the first exhaust port is formed such that exhaust is taken out in a direction orthogonal to the tube axis of the first processing vessel.

Explanation of Signs

[0117] 1 Substrate processing apparatus 2 Processing module 4 Processing furnace 5 Transfer chamber 8 Wafer 18 Reaction tube 24 Supply box 30 Exhaust port 34 Exhaust pipe 36 Conductance variable valve 38 Booster pump 40 Exhaust box 51 Maintenance port 54 Utility system 55 Stand 56 Intake port 68 Branch exhaust pipe 69 First gate valve 71 Second gate valve 72 First APC valve 73 Second APC valve 74 Bellows 78 Side wall panel 79 Frame 82 Mounting plate 85 Mounting part 87 Vibration damping plate

Claims

1. A substrate processing apparatus comprising: a first processing module having a first processing vessel for processing substrates and a substrate loading inlet provided on the front side; a first utility system including a first supply system for supplying processing gas into the first processing vessel and arranged adjacent to the rear side of the first processing module; a first vacuum exhaust device arranged behind the first processing module and including a first pump for evacuating the inside of the first processing vessel and a stand for the first pump; a first exhaust system including a first exhaust pipe providing approximately linear fluid communication between a first exhaust port provided on the rear side of the first processing vessel and an intake port of the first pump, and a first pressure adjustment unit provided on a flow path of the first exhaust pipe, wherein the stand holds the first pump at a predetermined height so that the intake port of the first pump is approximately opposite the first exhaust port.

2. A substrate processing apparatus as described in claim 1, wherein the first vacuum exhaust device is arranged on the rear side of the first utility system, and the first utility system and the first vacuum exhaust device are arranged so as to provide a maintenance area extending from the rear to the rear of the first processing module.

3. A substrate processing apparatus as described in claim 1, wherein the first exhaust system further has a gate valve and a flexible portion each arranged in series with the first pressure adjustment portion.

4. A substrate processing apparatus as described in claim 1, wherein the outer side of the first vacuum exhaust device is configured so as not to protrude outward beyond the outer side of the first utility system.

5. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the first pump is loaded on the stand so that the outer side of the stand coincides with the outer side of the first pump.

6. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the stand maintains the first pump in a position in which the rotation axis of the first pump extends in the vertical direction, the exhaust port is located lower than the intake port, and the body of the first pump is vertically elongated.

7. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the first vacuum exhaust device is configured so that the installation area when the first pump and the stand are stacked is less than 500 mm x 500 mm.

8. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the stand has a width substantially equal to the width of the first pump.

9. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the frame accommodates at least one of a controller for the motor of the first pump, equipment for supplying ballast gas to the first pump, and equipment for supplying cooling water to the first pump.

10. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the stand has a height that makes the height of the intake port of the first pump approximately equal to the height of the first exhaust port.

11. A substrate processing apparatus as described in claim 5, wherein a width of the first pump and the stand is substantially equal to a maximum width of the first utility system.

12. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the first vacuum exhaust device is installed on the floor on which the substrate processing apparatus is installed.

13. A second processing module having a second processing vessel for processing substrates and a substrate loading port provided on the front side and arranged in parallel to the first processing module, a second supply system for supplying processing gas into the second processing vessel and arranged adjacent to the rear side of the second processing module, a second vacuum exhaust device arranged behind the second processing module and including a second pump for evacuating the inside of the second processing vessel and a stand for the second pump, and a second exhaust port provided on the rear side of the second processing vessel and an intake port of the second pump, 2. The substrate processing apparatus of claim 1, further comprising: a second exhaust system including a second exhaust pipe for exhausting air through a first vacuum exhaust device, a second pressure adjustment unit provided on a flow path of the second exhaust pipe, and a maintenance area formed by being successively surrounded by the first vacuum exhaust device, the first utility system, the first processing module, the second processing module, the second utility system, and the second vacuum exhaust device, the maintenance area being configured to have a width and height that allows at least one of the first processing vessel, the first substrate holder, the second processing vessel, or the second substrate holder to be removed from a maintenance port.

14. A method for manufacturing a semiconductor device, comprising the steps of: providing a substrate loaded into a first processing container for substrate processing possessed by a first processing module through an inlet provided on the front side; supplying processing gas into the first processing container from a first supply system included in a first utility system arranged adjacent to the rear side of the first processing module; and evacuating the first processing container with a first pump of a first vacuum exhaust device arranged behind the first processing module, wherein the first pump is held at a predetermined height by a stand so that the intake port of the first pump is approximately opposite a first exhaust port provided on the rear side of the first processing container.

15. A substrate processing method comprising the steps of: providing a substrate loaded into a first processing container for substrate processing possessed by a first processing module through an inlet provided on the front side; supplying processing gas into the first processing container from a first supply system included in a first utility system arranged adjacent to the rear side of the first processing module; and evacuating the first processing container with a first pump of a first vacuum exhaust device arranged behind the first processing module, wherein the first pump is held at a predetermined height by a stand so that the intake port of the first pump is approximately opposite a first exhaust port provided on the rear side of the first processing container.

16. A program that causes a computer equipped in a substrate processing apparatus to execute the following steps: providing a substrate loaded into a first processing vessel for substrate processing possessed by a first processing module through an inlet provided on the front side; supplying processing gas into the first processing vessel from a first supply system included in a first utility system arranged adjacent to the rear side of the first processing module; and evacuating the first processing vessel with a first pump of a first vacuum exhaust device arranged behind the first processing module, wherein the first pump is held at a predetermined height by a stand so that the intake port of the first pump is approximately opposite a first exhaust port provided on the rear side of the first processing vessel.

17. A vacuum exhaust device for use in a substrate processing apparatus, comprising: a pump having an intake port on a side thereof; and a stand for the pump, wherein the substrate processing apparatus comprises: a processing module having a processing container for substrate processing and a substrate loading inlet provided on the front side; a utility system including a supply system for supplying processing gas into the processing container and arranged close to the rear side of the processing module; and an exhaust system including an exhaust pipe providing approximately linear fluid communication between an exhaust port provided on the rear side of the processing container and the intake port, and a pressure adjustment unit provided on the flow path of the exhaust pipe, wherein when the vacuum exhaust device is arranged behind the processing module and connected to the exhaust pipe, the stand holds the pump at a predetermined height so that the intake port is approximately opposite the exhaust port.

18. A vacuum exhaust device as described in claim 17, wherein the frame houses at least one of a controller for the pump motor, equipment for supplying ballast gas to the pump, and equipment for supplying cooling water to the pump.

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