Semiconductor laser element, light-emitting device, and manufacturing method thereof

Abstract

To provide a semiconductor laser element, a light emitting device, and a method for manufacturing these, capable of improving pass / fail determination precision.SOLUTION: A semiconductor laser element includes: a semiconductor-containing part having first and second main surfaces, a light emitting end surface, a light reflecting end surface, and an optical waveguide; an electrode provided on the first main surface; and one or more metal films provided at a position spaced apart from the electrode on the first main surface. An outer edge of the first main surface has a first side on a light emitting end surface side. A distance between the first main surface and the optical waveguide is greater than a distance between the second main surface and the optical waveguide. The one or more metal films are in contact with a first side of the first main surface, and (a) the length of the one or more metal films along the first side is smaller than the length of the electrode in a direction parallel to the first side. and / or (b) the one or more metal films are arranged at a position that does not overlap the optical waveguide in a plan view seen from the normal direction of the first main surface.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor laser element, a light emitting device, and manufacturing methods thereof.

Background Art

[0002] Patent Document 1 describes a method for manufacturing a semiconductor laser in which a plurality of electrode patterns smaller than the chip size that can be accommodated within the resonator length are formed within the chip size, and individual semiconductor lasers are obtained by dividing between the electrode patterns. In Patent Document 1, since it is difficult to produce laser chips with different resonator lengths from the same semiconductor wafer by this method, as a solution thereto, a method for manufacturing a semiconductor laser in which electrode patterns are continuously formed in the resonator length direction is described. In this method, individual semiconductor lasers are obtained by cleaving at a position across the electrode pattern.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a laser element obtained by dividing between electrode patterns, since there is no electrode pattern on the end face of the laser element, there are cases where the position of the end face of the laser element cannot be determined by an image recognition device or the like. In this case, for example, the electrode pattern is recognized by an image recognition device or the like, and it is estimated that the end face is located at a predetermined distance from the electrode pattern. Based on such an estimation, various pass / fail determinations such as the position where the laser element is mounted can be made. However, since the actual position of the end face does not always match the estimated position, there is a possibility of misjudging a product that is originally a good product as a defective product.

[0005] Also, when cleavage is performed at a position crossing the electrode pattern as in the manufacturing method described in Patent Document 1, the electrode pattern is formed up to the end portion obtained by cleavage. On the other hand, there is a concern that the electrode pattern may be stretched by cleavage, causing a short circuit or the like.

Means for Solving the Problems

[0006] This disclosure includes the following inventions. A semiconductor-containing portion having a first main surface, a second main surface, a light-emitting end face, a light-reflecting end face, and an optical waveguide; An electrode provided on the first main surface; One or more metal films provided at a position away from the electrode on the first main surface, The outer edge of the first main surface has a first side on the side of the light-emitting end face, The distance between the first main surface and the optical waveguide is larger than the distance between the second main surface and the optical waveguide, The one or more metal films are in contact with the first side of the first main surface, (a) The length of the one or more metal films along the first side is smaller than the length in the direction parallel to the first side of the electrode, and / or (b) The one or more metal films are arranged at a position where they do not overlap the optical waveguide in a plan view as viewed from the normal direction of the first main surface, a semiconductor laser element.

[0007] The above-described semiconductor laser element; A light-emitting device including a substrate to which the semiconductor laser element is fixed, The semiconductor laser element is fixed to the substrate in an arrangement where the second main surface faces the substrate, a light-emitting device.

[0008] A step of preparing a semiconductor-containing portion having a first main surface, a second main surface, and an optical waveguide; A step of forming, on the first main surface of the semiconductor-containing portion, a plurality of electrodes arranged in a first direction and one or more metal films, which are located between the plurality of electrodes and away from the plurality of electrodes, and have a length in a second direction intersecting the first direction smaller than the length of the plurality of electrodes in the second direction; A step of cleaving the space between the plurality of electrodes along the second direction at a position where the one or more metal films are divided; A method for manufacturing a semiconductor laser element, wherein the distance between the first main surface and the optical waveguide is greater than the distance between the second main surface and the optical waveguide.

[0009] A step of preparing a semiconductor-containing portion having a first main surface, a second main surface, and an optical waveguide; A step of forming, on the first main surface of the semiconductor-containing portion, a plurality of electrodes arranged in a first direction and one or more metal films, which are located between the plurality of electrodes, away from the plurality of electrodes, and do not overlap with the optical waveguide in a plan view as viewed from the normal direction of the first main surface; A step of cleaving the space between the plurality of electrodes along a second direction intersecting the first direction at a position where the one or more metal films are divided; A method for manufacturing a semiconductor laser element, wherein the distance between the first main surface and the optical waveguide is greater than the distance between the second main surface and the optical waveguide.

[0010] A step of preparing a semiconductor laser element by the above method; A step of fixing the semiconductor laser element to the substrate in an arrangement where the second main surface faces the substrate. A method for manufacturing a light-emitting device.

Advantages of the Invention

[0011] According to the above semiconductor laser element, light-emitting device, and their manufacturing methods, the accuracy of pass / fail determination can be improved.

Brief Description of the Drawings

[0012]

Figure 1

Figure 2A

Figure 2B

Figure 3

Figure 4A

Figure 4B

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Embodiments for Carrying Out the Invention

[0013] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In each drawing, the same elements are denoted by the same reference numerals. Also, in each cross-sectional view, only the state of the cut surface is shown, and members not present in the cut surface are omitted from illustration.

[0014] FIG. 1 is a schematic plan view showing a semiconductor laser element according to an embodiment. FIG. 2A is a cross-sectional view taken along line IIA-IIA in FIG. 1. FIG. 2B is a cross-sectional view taken along line IIB-IIB in FIG. 1. As shown in FIGS. 1 to 2B, the semiconductor laser element 100 includes a semiconductor-containing portion 10, an electrode 20, and one or more metal films 30.

[0015] (Semiconductor-containing portion 10) The semiconductor-containing portion 10 has a first main surface 11, a second main surface 12, a light-emitting end face 13, a light-reflecting end face 14, and an optical waveguide 15. The outer edge of the first main surface 11 has a first side 11a on the side of the light-emitting end face 13. The outer edge of the first main surface 11 has a second side 11b on the side of the light-reflecting end face 14. The outer edge of the first main surface 11 is, for example, quadrilateral in a plan view as viewed from the normal direction of the first main surface 11. The outer edge of the second main surface 12 is, for example, quadrilateral in a plan view as viewed from the normal direction of the second main surface 12. For example, the first main surface 11 is flat, and a ridge 17d is provided on the second main surface 12. If the metal film 30 is provided on a stepped portion, contrast is generated by the step, and there is a possibility that the step is erroneously detected as the outer shape of the metal film 30 by an image recognition device or the like. For this reason, it is preferable to provide the metal film 30 on a flat portion. If the first main surface 11 is flat, there is no step wherever the metal film 30 is formed, so that the degree of freedom in the formation position of the metal film 30 can be improved.

[0016] The distance between the first major surface 11 and the optical waveguide 15 is greater than the distance between the second major surface 12 and the optical waveguide 15. Thus, when the semiconductor laser element 100 is fixed to the substrate with the second major surface 12 of the semiconductor laser element 100 facing the substrate as described later, the positional relationship between the light-emitting end face 13 and the substrate can be detected using the metal film 30. Therefore, the accuracy of determining the pass or fail of those positional relationships can be improved. The magnitude relationship between the distance from the first major surface 11 to the optical waveguide 15 and the distance from the second major surface 12 to the optical waveguide 15 may be determined based on the magnitude relationship between the distance from the first major surface 11 to the active layer 17b and the distance from the second major surface 12 to the active layer 17b. That is, if the distance between the first major surface 11 and the active layer 17b is greater than the distance between the second major surface 12 and the active layer 17b, it can be said that the distance between the first major surface 11 and the optical waveguide 15 is greater than the distance between the second major surface 12 and the optical waveguide 15.

[0017] The optical waveguide 15 is disposed at a position connecting the light-emitting end face 13 and the light-reflecting end face 14. The optical waveguide 15 has, for example, a shape that is long in one direction. The optical waveguide 15 has, for example, a shape that is long in a direction intersecting the light-emitting end face 13 and the light-reflecting end face 14. The longitudinal direction of the optical waveguide 15 can intersect the light-emitting end face 13 and the light-reflecting end face 14 at an angle of 80 to 100°. The short-side direction of the optical waveguide 15 is a direction that intersects the longitudinal direction perpendicularly in a plan view.

[0018] The semiconductor-containing portion 10 can include a substrate 16 and a semiconductor layer 17. The substrate 16 has a first substrate major surface 16a and a second substrate major surface 16b on the side opposite to the first substrate major surface 16a. The semiconductor layer 17 is provided on the second substrate major surface 16b of the substrate 16.

[0019] The substrate 16 is, for example, a semiconductor substrate. As the substrate 16, a nitride semiconductor substrate such as a GaN substrate can be used. The cleavage plane of a nitride semiconductor having a wurtzite structure such as GaN is the m-plane (i.e., the {10-10} plane). For example, the semiconductor layer 17 can be formed on the +c plane (i.e., the (0001) plane) of the substrate 16, and the m-planes of the substrate 16 and the semiconductor layer 17 can be used as the light-emitting end face 13 and the light-reflecting end face 14. The c-plane is not limited to the plane that exactly coincides with the (0001) plane, and also includes planes having an off-angle within the range of ±1 degree. The m-plane is not limited to the plane that exactly coincides with the {10-10} plane, and also includes planes with a deviation of less than 1 degree from the {10-10} plane. The substrate 16 may not be provided, and the semiconductor-containing portion 10 may consist only of the semiconductor layer 17.

[0020] The semiconductor layer 17 has a first-conductivity-type semiconductor layer 17a, an active layer 17b, and a second-conductivity-type semiconductor layer 17c. The semiconductors constituting these can be nitride semiconductors, for example, group-III nitride semiconductors. Examples of group-III nitride semiconductors include GaN, InGaN, and AlGaN.

[0021] The first-conductivity-type semiconductor layer 17a is, for example, an n-type semiconductor layer. The second-conductivity-type semiconductor layer 17c is, for example, a p-type semiconductor layer. The substrate 16, the first-conductivity-type semiconductor layer 17a, the active layer 17b, and the second-conductivity-type semiconductor layer 17c may be in direct contact with each other, or another semiconductor layer may be disposed between them. For example, an undoped layer may be disposed between the second-conductivity-type semiconductor layer 17c and the active layer 17b. The active layer 17b can have a multiple quantum well structure or a single quantum well structure. Examples of the plurality of layers formed on the substrate 16 include, in order from the substrate 16 side, an n-side cladding layer, an n-side optical guide layer, the active layer 17b, a p-side electron confinement layer, a p-side optical guide layer, a p-side cladding layer, and a p-side contact layer. For example, the n-side cladding layer is the first-conductivity-type semiconductor layer 17a, and the p-side contact layer is the second-conductivity-type semiconductor layer 17c.

[0022] The semiconductor layer 17 is provided with a ridge 17d on the surface opposite to the substrate 16. In plan view, the ridge 17d is disposed at a position connecting the light-emitting end face 13 and the light-reflecting end face 14. The ridge 17d has, for example, a shape that is long in one direction. The ridge 17d has, for example, a shape that is long in a direction intersecting the light-emitting end face 13 and the light-reflecting end face 14. The longitudinal direction of the ridge 17d can intersect the light-emitting end face 13 and the light-reflecting end face 14 at an angle of 80 to 100°. The ridge 17d is, for example, stripe-shaped. The ridge 17d can define an optical waveguide. For example, in plan view as viewed from the normal direction of the first main surface 11, the portion that coincides with the ridge 17d can be regarded as the optical waveguide 15. The ridge 17d is formed, for example, on a part of the upper surface of the second conductivity type semiconductor layer 17c.

[0023] (Electrode 20) The electrode 20 is provided on the first main surface 11. In FIGS. 1 to 2B, the first main surface 11 is constituted by the first substrate main surface 16a of the substrate 16. That is, the electrode 20 is provided on the first substrate main surface 16a. The electrode 20 is, for example, an n-electrode. The electrode 20 has, for example, one or more layers of a metal or alloy selected from Ni, Rh, Cr, Au, W, Pt, Ti, and Al. The electrode 20 has, for example, an Au layer on the outermost surface. The electrode 20 does not contact the first side 11a of the first main surface 11. In plan view, the distance between the electrode 20 and the first side 11a can be 15 μm or more and can be 45 μm or less. The electrode 20 does not contact the second side 11b of the first main surface 11. In plan view, the distance between the electrode 20 and the second side 11b may be 15 μm or more. The distance between the electrode 20 and the second side 11b can be 45 μm or less. The electrode 20 and the second side 11b may be in contact. In FIG. 1, the electrode 20 is not disposed between the plurality of metal films 30, but a part of the electrode may be disposed between the plurality of metal films 30.

[0024] (Metal film 30) The metal film 30 is provided on the first main surface 11. The metal film 30 is provided at a position away from the electrode 20. The metal film 30 is in contact with the first side 11a of the first main surface 11. The metal film 30 satisfies at least one of the following (a) and (b). It may satisfy both. (a) The length L 30 along the first side 11a of the metal film 30 20 is smaller than the length L in the direction parallel to the first side 11a of the electrode 20. (b) The metal film 30 is arranged at a position that does not overlap with the optical waveguide 15 in a plan view seen from the normal direction of the first main surface 11.

[0025] By providing the metal film 30, the pass / fail judgment accuracy can be improved. That is, since the metal film 30 is in contact with the first side 11a of the first main surface 11, the position of the light emitting end face 13 can be discriminated by the metal film 30. Thereby, since the pass / fail judgment can be made based on the actual position of the light emitting end face 13, the pass / fail judgment accuracy can be improved. Also, after fixing the semiconductor laser element 100 to the substrate described later, the position of the light emitting end face 13 is specified by detecting the outer shape of the metal film 30 using an image recognition device or the like, and the pass / fail judgment of the fixing position of the semiconductor laser element 100 can be performed from the positional relationship between the end of the substrate and the light emitting end face 13.

[0026] Also, by providing the metal film 30, it is possible to reduce the probability that the end face protective film 62 shown in FIG. 3 described later reaches the electrode 20. This is because there is the metal film 30 between the light emitting end face 13 and the electrode 20, and the metal film 30 can reduce the intrusion of the end face protective film 62 provided on the light emitting end face 13. In this case, it is more preferable that the first main surface 11 is flat and the thickness of the metal film 30 is equal to or greater than the thickness of the electrode 20. Thereby, the possibility that the end face protective film 62 provided on the light emitting end face 13 reaches the electrode 20 can be further reduced. In particular, when a spacer is arranged on the side of the first main surface 11 when forming the end face protective film 62, if the thickness of the metal film 30 and the thickness of the electrode 20 are in such a relationship, the intrusion of the end face protective film 62 can be further reduced by the metal film 30 and the spacer.

[0027] The metal film 30 is not connected to the electrode 20. Therefore, compared with the case where the electrode 20 is formed in contact with the first side 11a, the possibility of a short circuit occurring when forming the light emitting end face 13 is low. The distance between the electrode 20 and the metal film 30 can be 5 μm or more. Thereby, the electrode 20 and the metal film 30 can be more reliably separated. The distance between the electrode 20 and the metal film 30 can be 20 μm or less.

[0028] The length L of the metal film 30 along the first side 11a 30 is smaller than the length L in the direction parallel to the first side 11a of the electrode 20. 20 Thereby, the possibility of a short circuit occurring can be further reduced. Also, the probability that the light emitting end face 13 is covered by the metal film 30 can be reduced. The length L of the metal film 30 along the first side 11a 30 refers to the length of the portion in contact with the first side 11a of the metal film 30. The length L in the direction parallel to the first side 11a of the electrode 20 20 refers to the largest one among the lengths in the direction parallel to the first side 11a of the electrode 20. The length L of the metal film 30 along the first side 11a 30 may be smaller than the length in the direction parallel to the first side 11a of the end portion of the electrode 20 on the light emitting end face 13 side.

[0029] The length L of the metal film 30 along the first side 11a 30 is smaller than the length L in the direction parallel to the first side 11a of the electrode 20. 20 can be 90% or less of the length L in the direction parallel to the first side 11a of the electrode 20, preferably 70% or less, and more preferably 30% or less. Thereby, the possibility of a short circuit occurring can be reduced. Also, the probability that the light emitting end face 13 is covered by the metal film 30 can be reduced. The length L of the metal film 30 along the first side 11a 30 is the length L in the direction parallel to the first side 11a of the electrode 20. 20 can be 10% or more.

[0030] The length L of the metal film 30 along the first side 11a 30can be 10 μm or more, preferably 20 μm or more. This can improve the accuracy of image recognition of the metal film 30. The length L along the first side 11a of the metal film 30 30 can be 100 μm or less. This can reduce the possibility of short circuit.

[0031] The length L along the first side 11a of the metal film 30 30 The longer the length L, the higher the accuracy of identifying the position of the light-emitting end face 13 by image recognition of the metal film 30. On the other hand, in order to reduce the possibility of short circuit or reduce the probability that the light-emitting end face 13 is covered by the metal film 30, the length L along the first side 11a of the metal film 30 30 is preferably shorter. To achieve both, it is preferable to provide a plurality of metal films 30. In FIG. 1, two metal films 30 are provided.

[0032] The total length L along the first side 11a of the plurality of metal films 30 30 is preferably 30% or more of the length L of the first side 11a. This can improve the accuracy of identifying the position of the light-emitting end face 13 by the metal film 30. The total length L along the first side 11a of the plurality of metal films 30 11a can be less than the length L of the first side 11a. The distance D from one end to the other end in the direction along the first side 11a of the plurality of metal films 30 30 is preferably at least half of the length L of the first side 11a, more preferably at least 2 / 3. This can improve the accuracy of identifying the position of the light-emitting end face 13 by the metal film 30. The distance D 11a refers to the distance from the farthest end to the other end among the portions of the plurality of metal films 30 in contact with the first side 11a. The distance D 30 is preferably less than the length L of the first side 11a. The distance D 11a can be less than the length L of the first side 11a. The distance D 30 can also be less than the length L in the direction parallel to the first side 11a of the electrode 20, and the length L in the direction parallel to the first side 11a of the electrode 20 30 is preferably less than the length L of the first side 11a. The distance D 11a can be less than the length L of the first side 11a. The distance D 30 is the length L in the direction parallel to the first side 11a of the electrode 20 20 can be less than the length L in the direction parallel to the first side 11a of the electrode 20, and the length L in the direction parallel to the first side 11a of the electrode 2020 The above may be sufficient. The shortest distance between adjacent metal films 30 among the plurality of metal films 30 is, for example, larger than the shortest distance between the metal film 30 and the electrode 20.

[0033] As shown in FIG. 1, the metal film 30 is disposed at a position that does not overlap with the optical waveguide 15 in a plan view. Thereby, the probability that the light-emitting end face 13 is covered by the metal film 30 can be reduced. The plurality of metal films 30 can include a set of metal films 30 disposed at positions sandwiching the optical waveguide 15 in a plan view. In a plan view, one or more of the plurality of metal films 30 can be disposed in one of the two regions divided by the optical waveguide 15 on the first main surface 11, and another one or more of the plurality of metal films 30 can be disposed in the other region. Thereby, compared with the case where the plurality of metal films 30 are disposed only in one region, the distance D 30 from one end to the other end in the direction along the first side 11a of the plurality of metal films 30 can be increased, and the accuracy of specifying the position of the light-emitting end face 13 by the metal film 30 can be improved. In FIG. 1, one metal film 30 is disposed in one of the two regions divided by the optical waveguide 15 on the first main surface 11, and another metal film 30 is disposed in the other region.

[0034] The plurality of metal films 30 may be arranged symmetrically about something, or may not be arranged symmetrically. In the semiconductor laser element 100 shown in FIG. 1, the plurality of metal films 30 are arranged symmetrically with respect to the optical waveguide 15 in a plan view as viewed from the normal direction of the first main surface 11. In FIG. 1, in a plan view, the optical waveguide 15 is disposed at a position overlapping with a line connecting the midpoints of the first side 11a and the second side 11b. In this case, by arranging the plurality of metal films 30 symmetrically with respect to the optical waveguide 15 in this way, the metal films 30 can be arranged efficiently. When the optical waveguide 15 is provided at a position that does not overlap with the line connecting the midpoints of the first side 11a and the second side 11b, the length L 30 of the metal film 30 provided on the smaller-area side of the left and right sides of the optical waveguide 15 30 is preferably made smaller than the length L

[0035] The outer edge of the metal film 30 is, for example, quadrangular in plan view. The length of the metal film 30 along the longitudinal direction of the optical waveguide 15 can be 10 μm or more, and preferably 15 μm or more. Thereby, the accuracy of image recognition of the metal film 30 can be improved. The length of the metal film 30 along the longitudinal direction of the optical waveguide 15 can be, for example, less than 40 μm, and may be 35 μm or less. Thereby, the area of the electrode 20 can be enlarged.

[0036] The thickness of the metal film 30 is preferably 1 μm or less. Thereby, the possibility that the metal film 30 spreads during cleavage can be reduced. The thickness of the metal film 30 can be 0.1 μm or more. The metal film 30 has, for example, one or more layers of a layer of any one or more metals or alloys such as Ni, Rh, Cr, Au, W, Pt, Ti, and Al. The metal film 30 has, for example, an Au layer on the outermost surface. The electrode 20 and the metal film 30 can have the same material. The electrode 20 and the metal film 30 can have the same laminated structure. Thereby, the electrode 20 and the metal film 30 can be formed in the same process, and the manufacturing process can be simplified. The metal film 30 only needs to be composed of a material capable of image recognition. Therefore, instead of the metal film 30, for example, a dielectric film that reflects illumination light during image recognition may be formed in the same manner as the metal film 30. Such a dielectric film may be multilayered or single-layered.

[0037] In FIG. 1, the metal film 30 is provided on the first main surface 16a of the substrate 16, but the metal film 30 may be provided on the semiconductor layer 17. In this case, the surface on the side where the ridge 17d of the semiconductor layer 17 is provided becomes the first main surface.

[0038] (Second Metal Film 40) The semiconductor laser element 100 may have a second metal film 40 provided on the first main surface 11. The second metal film 40 is provided at a position away from the electrode 20 and is in contact with the second side 11b of the first main surface 11. As will be described later, in order to ensure that the metal film 30 (the first metal film) is formed in contact with the first side 11a, it is preferable to divide the metal film 30 at a certain position to obtain the light emitting end face 13. In this case, if one of the two faces obtained by one division is used as the light emitting end face 13 and the other is used as the light reflecting end face 14, the second metal film 40 is formed as shown in FIG. 1. Alternatively, if both of the two faces obtained by one division are used as the light emitting end face 13, the second metal film 40 may not be provided.

[0039] By having the second metal film 40, it is possible to reduce the possibility that the end face protective film 62 shown in FIG. 3 described later reaches the electrode 20. In this case, it is more preferable that the first main surface 11 is flat and the thickness of the second metal film 40 is equal to or greater than the thickness of the electrode 20. Thereby, the possibility that the end face protective film 62 provided on the light reflecting end face 14 reaches the electrode 20 can be further reduced. In particular, when a spacer is arranged on the side of the first main surface 11 when forming the end face protective film 62, if the thickness of the second metal film 40 and the thickness of the electrode 20 are in such a relationship, the second metal film 40 and the spacer can further reduce the intrusion of the end face protective film 62.

[0040] (Second electrode 50) The semiconductor laser element 100 can have a second electrode 50 provided on the second main surface 12. The second electrode 50 can have a contact electrode 51 and a pad electrode 52. The second electrode 50 is, for example, a p electrode. The second electrode 50 is not in contact with the outer edge of the second main surface 12, for example. Alternatively, the contact electrode 51 is in contact with the outer edge of the second main surface 12, but the pad electrode 52 is not in contact with the outer edge of the second main surface 12.

[0041] In FIGS. 2A and 2B, a ridge 17d is provided in a part of the semiconductor layer 17, and the contact electrode 51 is in contact with the ridge 17d. The contact electrode 51 has, for example, one or more layers of a metal or alloy such as Ni, Rh, Cr, Au, W, Pt, Ti, Al, or a conductive oxide layer containing at least one selected from Zn, In, Sn. Examples of the conductive oxide include, for example, ITO (Indium Tin Oxide). The pad electrode 52 has, for example, one or more layers of a metal or alloy such as Ni, Rh, Cr, Au, W, Pt, Ti, Al. The pad electrode 52 has, for example, a layer containing Au such as an Au layer on the outermost surface.

[0042] The electrode 20 (first electrode) and the second electrode 50 may be provided on the same side. For example, a portion where the first-conductivity-type semiconductor layer 17a is exposed and a portion where the second-conductivity-type semiconductor layer 17c is exposed are provided on the surface of the semiconductor layer 17, the electrode 20 is formed on the portion where the first-conductivity-type semiconductor layer 17a is exposed, and the second electrode 50 is formed on the portion where the second-conductivity-type semiconductor layer 17c is exposed. In this case, the metal film 30, the electrode 20, and the second electrode 50 can be formed on the same side of the semiconductor-containing portion 10.

[0043] (Other members) As shown in FIGS. 2A and 2B, the semiconductor laser element 100 may have an insulating film 61. The insulating film 61 is provided on the surface of the semiconductor layer 17. A part of the insulating film 61 is in contact with a part of the second electrode 50. As shown in FIG. 3, the semiconductor laser element 100 may have an end face protective film 62 provided on both or one of the light emitting end face 13 and the light reflecting end face 14. FIG. 3 is a schematic plan view showing another example of the semiconductor laser element 100 of an embodiment. The reflectivity of the end face protective film 62 provided on the light emitting end face 13 can be made lower than the reflectivity of the end face protective film 62 provided on the light reflecting end face 14. Note that the form in which the semiconductor laser element 100 is used is not limited to the form in which the upper side in each drawing is the upper side, and any direction can be the upper side.

[0044] (Light emitting device 200) FIG. 4A is a schematic plan view showing a light-emitting device 200 according to an embodiment. The light-emitting device 200 includes a semiconductor laser element 100 and a substrate 70 to which the semiconductor laser element 100 is fixed. The semiconductor laser element 100 is fixed to the substrate 70 in such an arrangement that the second electrode 50 faces the substrate 70. The substrate 70 may be electrically connected to the semiconductor laser element 100. The substrate 70 is, for example, a submount. The substrate 70 may be a package.

[0045] As shown in FIG. 4A, by fixing the semiconductor laser element 100 to the substrate 70 with the side of the second main surface 12 facing the substrate 70, the metal film 30 can be confirmed in the state where the semiconductor laser element 100 is fixed to the substrate 70. Accordingly, the metal film 30 can be used as a criterion for acceptance or rejection determination in the state where the semiconductor laser element 100 is fixed to the substrate 70.

[0046] FIG. 4B is a schematic cross-sectional view showing another example of the light-emitting device 200 according to an embodiment. The light-emitting device 200 includes a semiconductor laser element 100, a substrate 70 to which the semiconductor laser element 100 is fixed, a package 81, and a reflecting member 82.

[0047] The substrate 70 shown in FIG. 4B is a submount. The substrate 70 includes an insulating main body and a conductive layer provided on the surface of the main body. The insulating main body is, for example, ceramics. The second electrode 50 of the semiconductor laser element is joined to the conductive layer of the substrate 70 via a conductive adhesive 83.

[0048] The package 81 is made of a conductive material such as metal, an insulating material such as glass or ceramics, or a composite material thereof. The package 81 may be composed of a combination of a plurality of components. The package 81 has, in a part thereof, a window portion having translucency through which laser light can pass. The laser light emitted from the semiconductor laser element 100 is reflected by the reflecting member 82 and exits the light-emitting device 200 through the window portion of the package 81. Depending on the position of the window portion of the package 81, the reflecting member 82 may not be necessary. The light-emitting device 200 may have a wavelength conversion member such as a phosphor provided at a position through which the laser light passes. The package 81 hermetically seals the semiconductor laser element 100. The package 81 has an anode electrode and a cathode electrode. The anode electrode of the semiconductor laser element 100 is electrically connected to the anode electrode of the package via a conductive layer, a linear wire, or the like. The cathode electrode of the semiconductor laser element 100 is electrically connected to the cathode electrode of the package via a conductive layer, a linear wire, or the like.

[0049] As shown in FIG. 4B, when the side of the semiconductor layer 17 is fixed to the substrate 70, the distance from the optical waveguide 15 to the substrate 70 is smaller than when the side of the substrate 16 is fixed to the substrate 70, and the probability that the laser light emitted from the semiconductor laser element 100 is blocked by the substrate 70 is high. For this reason, in the arrangement shown in FIG. 4B, the allowable range of the distance between the end of the substrate 70 and the end of the semiconductor laser element 100 is smaller. In the light-emitting device of the present embodiment, by providing the metal film 30, the accuracy of the pass / fail determination can be improved, and thus an improvement in yield can be expected.

[0050] (Method for manufacturing a semiconductor laser element) FIG. 5 is a flowchart showing a method of manufacturing a semiconductor laser element 100 according to an embodiment. FIGS. 6 to 10 are schematic plan views or cross-sectional views showing a method of manufacturing a semiconductor laser element 100 according to an embodiment. The method of manufacturing a semiconductor laser element 100 includes a semiconductor-containing portion preparation step S101, an electrode and metal film formation step S102, and a cleavage step S103. Note that the shape, arrangement, material, etc. of each member in the method of manufacturing a semiconductor laser element 100 can be those described above.

[0051] (Semiconductor-containing portion preparation step S101) In the semiconductor-containing portion preparation step S101, as shown in FIGS. 6 and 7, a semiconductor-containing portion 10 having a first main surface 11, a second main surface 12, and an optical waveguide 15 is prepared. FIG. 6 is a schematic plan view showing a method of manufacturing a semiconductor laser element according to an embodiment. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 6. The distance between the first main surface 11 and the active layer 17b is larger than the distance between the second main surface 12 and the active layer 17b. Thus, it can be said that the distance between the first main surface 11 and the optical waveguide 15 is larger than the distance between the second main surface 12 and the optical waveguide 15. The semiconductor-containing portion 10 can include a substrate 16 and a semiconductor layer 17. The semiconductor-containing portion 10 is, for example, in the form of a wafer. The semiconductor layer 17 can be formed on the surface of the substrate 16 by, for example, metalorganic chemical vapor deposition (MOCVD). The ridge 17d can be formed by, for example, etching.

[0052] (Electrode and metal film formation step S102) In the electrode and metal film formation step S102, as shown in FIGS. 8 and 9, a plurality of electrodes 20 and a metal film 31 are formed on the first main surface 11 of the semiconductor-containing portion 10. FIG. 8 is a schematic plan view showing a method of manufacturing a semiconductor laser element according to an embodiment. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 8. The plurality of electrodes 20 are formed so as to be arranged in the first direction Y. The metal film 31 is formed between the plurality of electrodes 20 and at a position away from the plurality of electrodes 20. That is, one or more metal films 31 are formed between adjacent electrodes 20. The length of the metal film 31 in the second direction X intersecting the first direction Y is smaller than the length of the electrode 20 in the second direction X. The metal film 31 is formed at a position that does not overlap the optical waveguide 15 in a plan view as viewed from the normal direction of the first main surface 11. The electrodes 20 and the metal film 31 can be formed, for example, by sputtering or chemical vapor deposition (CVD method).

[0053] (Cleavage step S103) In the cleavage step S103, as shown in FIG. 10, the metal film 31 is cleaved at a position along the second direction X between the plurality of electrodes 20. FIG. 10 is a schematic plan view showing a method of manufacturing a semiconductor laser element according to an embodiment. The cleavage can be performed, for example, by first forming a groove in a part of the semiconductor-containing portion 10 using a laser scribing device and then pushing the semiconductor-containing portion 10 with a blade. The groove formed using the laser scribing device may be formed only outside the region that becomes the semiconductor laser element 100. For example, a groove can be formed at one end of a wafer or a laminate that is a divided piece obtained by dividing the wafer, and the laminate can be cleaved along the groove by an external force.

[0054] By performing the cleavage step S103, the light emitting end face 13 and the light reflecting end face 14 are formed. In FIG. 10, of the two faces obtained by one cleavage, one is the light emitting end face 13 and the other is the light reflecting end face 14. By performing the cleavage step S103, the metal film 31 is divided into two, one becoming the metal film 30 and the other becoming the second metal film 40. When both of the two faces obtained by one cleavage are the light emitting end face 13, one metal film 31 becomes two metal films 30. After the cleavage step, an end face protective film 62 may be formed on one or both of the light emitting end face 13 and the light reflecting end face 14.

[0055] Through the above steps, a semiconductor laser element 100 having a metal film 30 and capable of improving the pass / fail determination accuracy can be obtained. After the cleavage step S103, a dividing step can be performed. In the dividing step, the laminate that has undergone the cleavage step S103 is divided along the planned dividing line. The planned dividing line is a line that intersects the light emitting end face 13 and the light reflecting end face 14 obtained by cleavage. The division can be performed, for example, first by forming a groove at a position overlapping the planned dividing line using a laser scribing device, and then pushing the laminate with a blade. The order of the dividing step and the cleavage step S103 may be interchanged. Also, before the cleavage step S103, a step of forming a member such as a protective film may be performed.

[0056] (Method for manufacturing a light emitting device) FIG. 11 is a flowchart showing a method for manufacturing a light emitting device 200 according to an embodiment. As shown in FIG. 11, the method for manufacturing the light emitting device 200 shown in FIGS. 4A or 4B includes a step of preparing a semiconductor laser element 100 (semiconductor laser element preparation step S201) and a step of fixing the semiconductor laser element 100 to a substrate 70 (fixing step S202). In the fixing step S202, the semiconductor laser element 100 is fixed to the substrate 70 with the second main face 12 facing the substrate 70. The fixing can be performed by means of an adhesive 83.

[0057] After the fixing step S202, a detection step S203 and an acceptance determination step S204 may be included. In the detection step S203, the outer shape of an object to be recognized including the metal film 30 of the semiconductor laser element 100 and the end portion of the substrate 70 or a portion where the end portion can be estimated is detected. The object to be recognized may consist only of these, or may include other members. Detecting the outer shape of the object to be recognized may also be referred to as performing image recognition on the object to be recognized. In the acceptance determination step S204, an acceptance determination is made using the detected outer shape of the object to be recognized. The acceptance determination can be performed, for example, by determining whether the distance between the end portion of the substrate 70 or a portion where the end portion can be estimated and the metal film 30 is within the range of a reference value. The portion where the end portion of the substrate 70 can be estimated is, for example, a metal layer provided near the end portion although it does not coincide with the end portion in a plan view. The distance between the metal layer of the substrate 70 and the end portion of the substrate 70 is, for example, 70 μm or less.

[0058] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. Based on the above-described embodiments of the present invention, all forms that can be appropriately designed and implemented by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention. In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modification examples and correction examples, and it is understood that those modification examples and correction examples also belong to the scope of the present invention.

Explanation of Reference Numerals

[0059] 10 Semiconductor-containing portion 11 First main surface 11a First side 11b Second side 12 Second main surface 13 Light-emitting end face 14 Light-reflecting end face 15 Optical waveguide 16 Substrate 16a First substrate main surface 16b Second substrate main surface 17 Semiconductor layer 17a First conductivity type semiconductor layer 17b Active layer 17c Second conductivity type semiconductor layer 17d Ridge 20 Electrode 30 Metal film 31 Metal film 40 Second metal film 50 Second electrode 51 Contact electrode 52 Pad electrode 61 Insulating film 62 End face protective film 70 Substrate 81 Package 82 Reflective member 83 Adhesive 100 Semiconductor laser element 200 Light emitting device

Claims

1. A semiconductor-containing part having a first main surface, a second main surface, a light-emitting end face, a light-reflecting end face, and an optical waveguide; An electrode provided on the first main surface; One or more metal films provided at a position away from the electrode on the first main surface, and comprising: The outer edge of the first main surface has a first side on the side of the light-emitting end face; The distance between the first main surface and the optical waveguide is greater than the distance between the second main surface and the optical waveguide; The one or more metal films are in contact with the first side of the first main surface; (a) The length of the one or more metal films along the first side is smaller than the length in the direction parallel to the first side of the electrode, and / or (b) The one or more metal films are arranged at positions that do not overlap with the optical waveguide in a plan view seen from the normal direction of the first main surface. A semiconductor laser element.

2. Comprising an end face protective film provided on the light-emitting end face, The one or more metal films are arranged between the light-emitting end face and the electrode. The semiconductor laser element according to claim 1.

3. The one or more metal films are a plurality of metal films. The semiconductor laser element according to claim 1 or 2.

4. The total length of the plurality of metal films along the first side is 30% or more of the length of the first side. The semiconductor laser element according to claim 3.

5. The plurality of metal films include a set of metal films arranged at positions sandwiching the optical waveguide in a plan view seen from the normal direction of the first main surface. The semiconductor laser element according to claim 3 or 4.

6. The outer edge of the first main surface has a second side on the side of the light-reflecting end face, The one or more metal films are one or more first metal films, The semiconductor laser element includes one or more second metal films provided at a position away from the electrode on the first main surface and in contact with the second side of the first main surface. The semiconductor laser element according to any one of claims 1 to 5.

7. A part of the electrode is arranged at a position overlapping with the optical waveguide in a plan view seen from the normal direction of the first main surface. The semiconductor laser element according to any one of claims 1 to 6.

8. The semiconductor-containing part A substrate having a first substrate main surface constituting the first main surface and a second substrate main surface on the side opposite to the first substrate main surface, A semiconductor layer provided on the second substrate main surface of the substrate, and having: The electrode is a first electrode. The semiconductor laser device according to any one of claims 1 to 7, comprising a second electrode provided on the second main surface.

9. A light-emitting device comprising: the semiconductor laser device according to any one of claims 1 to 8; and a substrate to which the semiconductor laser device is fixed, wherein the semiconductor laser device is fixed to the substrate in such a manner that the second main surface faces the substrate.

10. A step of preparing a semiconductor-containing portion having a first main surface, a second main surface, and an optical waveguide; a step of forming, on the first main surface of the semiconductor-containing portion, a plurality of electrodes arranged in a first direction, and one or more metal films having a length in a second direction intersecting the first direction and located between the plurality of electrodes and away from the plurality of electrodes, the length in the second direction of the one or more metal films being smaller than the length in the second direction of the plurality of electrodes; a step of cleaving between the plurality of electrodes at a position where the one or more metal films are divided along the second direction, wherein a distance between the first main surface and the optical waveguide is larger than a distance between the second main surface and the optical waveguide. A method of manufacturing a semiconductor laser device.

11. A step of preparing a semiconductor-containing portion having a first main surface, a second main surface, and an optical waveguide; a step of forming, on the first main surface of the semiconductor-containing portion, a plurality of electrodes arranged in a first direction, and one or more metal films located between the plurality of electrodes, away from the plurality of electrodes, and not overlapping the optical waveguide in a plan view as viewed from a normal direction of the first main surface; a step of cleaving between the plurality of electrodes at a position where the one or more metal films are divided along a second direction intersecting the first direction, wherein a distance between the first main surface and the optical waveguide is larger than a distance between the second main surface and the optical waveguide. A method of manufacturing a semiconductor laser device.

12. By performing the cleaving step, a light-emitting end face and a light-reflecting end face are formed, After the cleaving step, a step of forming an end face protective film on the light-emitting end face is provided. A method of manufacturing a semiconductor laser device according to claim 10 or 11.

13. A step of preparing a semiconductor laser device by the method according to any one of claims 10 to 12; and a step of fixing the semiconductor laser device to a substrate in such a manner that the second main surface faces the substrate. A method of manufacturing a light-emitting device.

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