Semiconductor device and method of manufacturing the same

Abstract

To provide a semiconductor device capable of obtaining the strength of bent portions without causing insulation failure between electrode terminals at the bent portions of the electrode terminals.SOLUTION: A semiconductor device 101 includes a sealing resin 2 encapsulating a semiconductor element therein, a base portion 4 which is a base protruding from the sealing resin 2, a tip portion 6 which is an end portion of a tip extending from the base portion 4, and a plurality of electrode terminals 3 each having an intermediate portion 5 between the tip portion 6 and the base portion 4. The electrode terminals 3 are arranged along a first direction, and provided so as to protrude from the sealing resin 2 along a second direction perpendicular to the first direction. The intermediate portion 5 includes first intermediate portions 5A and 5B that are larger in width in the first direction than the base portion 4 and the tip portion 6, and a second intermediate portion 5C having a bent portion 8 which is larger in width in the first direction than the base portion 4 and the tip portion 6, narrower in the first direction than the first intermediate portions 5A and 5B, and bent in a third direction perpendicular to the first direction and the second direction.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

Background Art

[0002] There is a semiconductor device having a semiconductor element and an insulating encapsulating resin with a control terminal built therein, a conductive electrode terminal protruding from a side surface of the encapsulating resin, and the electrode terminal being bent at a right angle or an obtuse angle.

[0003] In such a semiconductor device, if the width of the bent portion of the electrode terminal is large, bending deformation may easily occur when bending. In order to suppress such a decrease in bendability, for example, in Japanese Patent Application Laid-Open No. 11-317484, an electrode terminal protruding from an insulating resin sealing portion has a root portion, an intermediate portion wider than the root portion, and a tip portion having the narrowest width in this order from the sealing portion side, and a sandwiching portion having a reduced width is provided in a part of the intermediate portion, and a technique in which the electrode terminal is bent at the narrow portion is described.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in Patent Document 1, since the width of the bent portion of the electrode terminal is reduced, the strength is lowered, breakage or deformation of the electrode terminal is likely to occur, or the accuracy of the bending position and bending direction during lead forming, that is, the bending accuracy is likely to deteriorate. On the other hand, if the width of the electrode terminal is increased, swelling occurs in the width direction of the electrode terminal when bent, and insulation failure is likely to occur between adjacent electrode terminals.

[0006] The present disclosure has been made to solve the above problems, and an object thereof is to obtain a semiconductor device capable of suppressing insulation failure of electrode terminals and suppressing breakage of electrode terminals due to insufficient strength of the electrode terminals.

Means for Solving the Problems

[0007] The semiconductor device according to the present disclosure includes a conductive die bond, a semiconductor element electrically connected to the die bond, a sealing resin which is an insulating resin encapsulating the semiconductor element therein, and a plurality of electrode terminals which are electrically connected to the die bond, protrude from the sealing resin, have a root portion which is the root protruding from the sealing resin, a tip portion which is the tip extending from the root portion, and an intermediate portion between the tip portion and the root portion. The plurality of electrode terminals are arranged along a first direction and are provided so as to protrude from the sealing resin along a second direction orthogonal to the first direction. The intermediate portion includes a first intermediate portion having a width in the first direction wider than those of the root portion and the tip portion, and a second intermediate portion having a width in the first direction wider than that of the root portion, narrower than that of the first intermediate portion in the first direction, and having a bent portion bent toward a third direction orthogonal to the first direction and the second direction.

[0008] The manufacturing method of the semiconductor device according to the present disclosure includes: a first forming step of processing a plate-shaped metal material to form a root portion of an electrode terminal which is arranged in a plurality along a first direction and is formed to extend along a second direction orthogonal to the first direction, a tip portion whose tip is connected to an outer frame of the metal material, and an intermediate portion provided between the root portion and the tip portion and each connected by a connecting portion in the first direction; a mounting and molding step of mounting a semiconductor element on the metal material on which the root portion, the tip portion, and the intermediate portion are formed so as to be electrically connected, and encapsulating the semiconductor element with an insulating resin; a second forming step of removing the connecting portion and the outer frame to form a first intermediate portion having a width in the first direction wider than those of the root portion and the tip portion, and a second intermediate portion having a width in the first direction wider than that of the root portion and narrower than that of the first intermediate portion in the first direction; and a lead forming step of bending the electrode terminal toward a third direction orthogonal to the first direction and the second direction at the second intermediate portion.

Advantages of the Invention

[0009] According to the semiconductor device according to the present disclosure, the intermediate portion includes a first intermediate portion having a width in a first direction that is wider than that of the base portion and the tip portion, and a width in the first direction that is wider than that of the base portion and narrower than that of the first intermediate portion in the first direction, and a second intermediate portion having a bent portion bent toward a third direction orthogonal to the first direction and the second direction. By providing this configuration, even when a bulge occurs in the bent portion, it is possible to suppress insulation failure of the electrode terminal and at the same time suppress breakage of the electrode terminal due to insufficient strength.

[0010] According to the method of manufacturing a semiconductor device according to the present disclosure, a second forming step of forming a first intermediate portion having a width in a first direction that is wider than that of the base portion and the tip portion, and a second intermediate portion having a width in the first direction that is wider than that of the base portion and narrower than that of the first intermediate portion in the first direction, and a lead forming step of bending an electrode terminal toward a third direction orthogonal to the first direction and the second direction in the second intermediate portion are provided. Therefore, even when a bulge occurs in the bent portion, it is possible to suppress insulation failure of the electrode terminal and at the same time suppress breakage of the electrode terminal due to insufficient strength.

Brief Description of the Drawings

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[0012] Embodiment 1 In Embodiment 1 of the present disclosure, a semiconductor device 101 having a notch is taken as an example to explain the connection removal part of the electrode terminal. FIG. 1 is a plan view of the semiconductor device 101, and FIG. 2 is a side view of the semiconductor device 101.

[0013] The semiconductor device 101 is a resin-sealed intelligent power semiconductor device. The semiconductor elements of the power section and the control section are mounted on a conductive die bond and encapsulated with a sealing resin 2 which is an insulating resin. It has electrode terminals 3 formed of a lead frame which is a plate-like metal material protruding from both sides of the sealing resin 2. The electrode terminal 3 located on one long side of the sealing resin 2 in the direction connecting the long sides of FIG. 1 is an external terminal connected to the control section, and is designed to be thinner than the electrode terminal 3 of the power section located on the other long side. The electrode terminals 3 have the same shape among adjacent electrode terminals 3 and are arranged at equal intervals along the first direction which is the long side direction.

[0014] FIG. 2 is a side view of the semiconductor device 101 as viewed from the I direction in FIG. 1. As shown in FIG. 2, the electrode terminal 3 has a shape bent at a substantially right angle in the third direction orthogonal to the first direction and the second direction. This is formed by initially bending the electrode terminal 3 extending in the second direction at the middle in the third direction, and is for mounting the semiconductor device 101 on an external substrate. Therefore, the plurality of electrode terminals 3 are bent in the same third direction. Note that the bending angle may be an obtuse angle instead of a right angle. The portion bent and curved from the second direction to the third direction of this electrode terminal 3 is defined as the bent portion 8.

[0015] FIG. 3 is an enlarged plan view of the H portion which is the peripheral portion of the electrode terminal 3 in FIG. 1. In the semiconductor device 101, the electrode terminal 3 is composed of a root portion 4 which is the root protruding from the sealing resin 2, an intermediate portion 5 including a bent portion 8 bent around a bending center 11, and a tip portion 6 (not shown) extending in the third direction orthogonal to the root portion 4 after being bent. In FIG. 3, the tip portion 6 is not shown because it is bent at the intermediate portion 5 in the third direction, that is, from the front to the back of the paper surface, and only the root portion 4 and the side connected to the root portion 4 of the intermediate portion 5 are shown, but the tip portion 6 exists on the tip side of the intermediate portion 5 including the bent portion 8. Details of the bent portion 8 and the bending center 11 will be described later.

[0016] The middle part 5 has a middle part 5A connected to the root side as the first middle part and a middle part 5B (not shown) connected to the tip part 6 (not shown), and has a middle part 5C located between the middle part 5A and the middle part 5B as the second middle part. Further, the middle part 5C includes a bent part 8. As described above, in FIG. 3, only the root part 4 of the electrode terminal 3 and the side connected to the root part 4 of the middle part 5 are shown. Therefore, similar to the tip part 6, the middle part 5B of the middle part 5B and the middle part 5C, that is, the part on the tip part 6 side is not shown.

[0017] Furthermore, the terminal width of the electrode terminal 3 will be described with reference to FIG. 3. First, the root part 4 has a constant terminal width d4. The middle part 5A which is the first middle part and the middle part 5B (not shown in FIG. 3) have a terminal width d5, and the terminal width d5 is larger than the terminal width d4 of the root part 4 and the terminal width d6 (not shown) of the tip part 6. Further, for the middle part 5C which is the second middle part, the terminal width of the part connected to the root part 4 is d7, and d7 is larger than the terminal width d4 of the root part 4 and the terminal width d6 of the tip part 6 and smaller than the terminal width d5 of the middle part 5A. Further, a bulging part 7 is generated in the bent part 8 of the middle part 5C, and the terminal width d8 at the bulging part 7 is larger than d4 and d6 and smaller than d5. The generation of this bulging part 7 will be described later.

[0018] Next, the bent part 8 included in the middle part 5C will be described with reference to FIG. 4. FIG. 4 is a side view showing the peripheral part of the electrode terminal 3 viewed from the J direction shown in FIG. 3. The electrode terminal 3 has a bent part 8 in the middle part 5C. In the present disclosure, the starting point of this bent part 8, that is, the position where it starts to bend from the straight part is defined as the bending start point 9, the end point, that is, the position where it moves from the bent part to the straight part is defined as the bending end point 10, and further, the position equidistant from the bending start point 9 and the bending end point 10, that is, the central position is defined as the bending center 11. As shown in FIG. 4, in the present embodiment, the bending start point 9 and the bending end point 10 are within the range of the middle part 5C, and naturally, the bending center 11 is also within the range of the middle part 5C.

[0019] Next, the mechanism by which the bulge 7 is generated will be described with reference to FIGS. 3 and 4. The intermediate portion 5C has a constant width d7 that is larger than the terminal width d4 of the base portion 4 and smaller than the terminal widths d5 of the intermediate portions 5A and 5B before the electrode terminal 3 is bent, and the bulge 7 has not occurred. However, when bending is performed such that the bent portion 8 is included in the intermediate portion 5C, as shown in FIG. 3, a portion where the electrode terminal member spreads outward in the terminal width direction is generated in the bent portion 8. This is the bulge 7. This bulge 7 is caused by the member of the electrode terminal 3 being stretched on the outer surface of the bend and compressed on the inner surface of the bend during the bending process, and the member compressed from both the base side and the tip side on the inner side of the bending center 11 is deformed and escapes to the outside of the terminal. Therefore, as shown in FIG. 4, it is more likely to occur significantly on the inner surface of the bend. Also, the amount of bulge of the bulge 7 is maximum at the bending center 11 among the bent portions 8. On the other hand, in the vicinity of the bending start point 9 where the inclination starts from the extending direction from the base portion 4 and the bending end point 10 where the inclination ends toward the tip portion 6 of the bent portion 8, the stretching and compression of the member are small, and a bulge does not necessarily occur.

[0020] Next, the manufacturing method of the semiconductor device 101 according to the first embodiment will be described with reference to FIG. 5. The semiconductor device 101 is manufactured through four steps: a first forming step of forming a shape including the electrode terminal 3 on a lead frame, a mounting and molding step of arranging a semiconductor chip on the lead frame and sealing it with an insulating resin, a second forming step of removing the connection portion and the outer frame, and a lead forming step of bending the electrode terminal 3. Note that the first forming step and the mounting and molding step are the same as those of the conventional semiconductor device manufacturing method, so an overview will be described, and the second forming step and the lead forming step will be described in detail.

[0021] FIG. 6 is a plan view of the semiconductor device 101 in which the first forming process and the mounting molding process are performed. At this time, on each long side of the encapsulating resin 2 of the semiconductor device 101, on the lead frame 21 exposed to the outside, a plurality of electrode terminals 3 arranged in parallel in the first direction and protruding from the encapsulating resin 2 in the second direction orthogonal to the first direction are formed with a base portion 4, a tip portion 6, and a connecting portion 22 that connects adjacent electrode terminals 3 to each other in the first direction between the base portion 4 and the tip portion 6. The connecting portion 22 is formed to suppress deformation of the lead frame 21 in the manufacturing process of the semiconductor device and to suppress outflow of the insulating resin to the outside in the mounting molding process. Also, adjacent electrode terminals 3 are integrated with the tip portions 6 of the plurality of electrode terminals 3 and are also connected by an outer frame 23 arranged in a ring shape.

[0022] The lead frame 21 on which the electrode terminal 3, the connecting portion 22, and the outer frame 23 are formed is formed by, for example, press punching a flat metal material in the first forming process. Although FIG. 6 shows one semiconductor device, in this process, a plurality of semiconductor devices may be arranged on the same lead frame 21 and may be connected by the lead frame 21 without being separated into individual semiconductor devices.

[0023] After the mounting molding process, in the second forming process, for the electrode terminals 3 connected to each other adjacent to each other, the connecting portion 22 and the outer frame 23 are removed to separate the adjacent electrode terminals 3. In the present embodiment, first, the connecting portion removal is performed, and then the outer frame removal is performed.

[0024] FIG. 7 is a plan view of the semiconductor device 101 after the connecting portion removal. FIGS. 8 and 9 are enlarged views of the K portion of FIG. 7, FIG. 8 shows the time of connecting portion removal, and FIG. 9 shows after the connecting portion removal. The connecting portion removal is a process of removing the connecting portion 22 by press working with a corresponding mold 24 from the front and back of the lead frame 21. Note that the connecting portion removal is not limited to press working and may be, for example, cutting working.

[0025] In the first embodiment, in connection part removal, as shown in FIG. 8, a part of the connection part 22 remains connected to the electrode terminal 3 and the intermediate part 5 is formed. Further, a die is used that can create a rectangular notch in the connection removal part, such that the terminal width of the part with the notch, i.e., the terminal width remaining between the left and right notches, is smaller than the width of the connection removal part, i.e., the terminal width of the area where the connection part 22 without the notch remains, and is wider than the base part 4 and the tip part 6. As a result, as shown in FIG. 9, the connection removal part becomes the intermediate part 5, the linear remaining part of the connection part becomes the intermediate parts 5A and 5B which are the first intermediate parts, and the electrode terminal 3 is formed where the notch becomes the intermediate part 5C which is the second intermediate part. Also, at this time, the terminal width of the electrode terminal 3 is d4 at the base part 4, d6 at the tip part, d5 at the intermediate parts 5A and 5B, and d7 at the intermediate part 5C, and it is formed such that d5>d7>d4 and d6. Note that the terminal width d7 at the intermediate part 5C is set in consideration of the swelling amount of the swelling part 7 which will be described later.

[0026] After connection part removal, outer frame removal is performed to cut and remove the outer frame 23 of the lead frame 21. FIG. 10 is a plan view of the semiconductor device 101 after outer frame removal. By outer frame removal, a plurality of semiconductor devices arranged on a single lead frame are separated into individual semiconductor devices, and the adjacent electrode terminals 3 of each semiconductor device are also completely separated.

[0027] After outer frame removal, lead forming is performed to bend the electrode terminal 3. Lead forming is a process of pressing the electrode terminal 3 from above and below with corresponding L-shaped dies to bend the electrode terminal 3 at a substantially right angle. In the first embodiment, the dies are aligned so that the bending center 11 of the bending part 8 is located at the intermediate part 5C which is the notch formed by connection part removal, and the electrode terminal 3 is bent. The semiconductor device 101 after lead forming becomes as shown in FIGS. 1 to 4. Lead forming is performed by setting the pressing conditions and die shape in advance so that the bending part 8 is bent to have a desired curvature. Note that in the first embodiment, the angle at which the electrode terminal 3 is bent is a substantially right angle, but it may be an obtuse angle.

[0028] In lead forming, a bulging portion 7 is generated around the bending center 11 of the intermediate portion 5C. The amount of bulge varies depending on the curvature of the bending portion 8 along with the member and thickness of the electrode terminal 3. In the manufacturing method of the first embodiment, after confirming the amount of bulge of the bulging portion 7 in advance, as shown in FIG. 3, the terminal width d7 of the intermediate portion 5C in the connection portion removal process and the curvature of the bending portion 8 in lead forming are set such that the terminal width d8 of the bulging portion 7 is smaller than the terminal widths d5 of the intermediate portions 5A and 5B. This setting may be performed, for example, in a design process provided before the second forming process. This can suppress the occurrence of insulation failure due to contact between the bulging portions 7 of adjacent electrode terminals 3 and at the same time suppress breakage due to insufficient strength of the bending portion 8.

[0029] Also, in the manufacturing method according to the first embodiment, since the shape of the intermediate portion 5 is processed by the connection portion removal that is normally performed, the desired semiconductor device 101 can be manufactured without increasing the construction period and cost by adding new processes.

[0030] Depending on the product specifications, for the purpose of preventing oxidation of the electrode terminal 3 and improving the conductivity, a plating process of plating the surface of the electrode terminal 3 may be added after the connection portion removal process.

[0031] Also, in the second forming process of the semiconductor device 101, the order of connection portion removal and outer frame removal may be either first, or they may be performed simultaneously in the same process. However, if the outer frame removal is performed first, since the connection portion removal is performed after being separated into individual semiconductor devices, the tip of the electrode terminal 3 is likely to break or bend within the connection portion removal process. Therefore, it is better to perform the outer frame removal after the connection portion removal.

[0032] In the semiconductor device 101 of the present disclosure, a bulging portion 7 is generated around the bending center 11 by bending. Even when the terminal width is increased, the terminal width d8 at the bulging portion 7 is smaller than the terminal widths d5 of the intermediate portions 5A and 5B. Further, the terminal width d7 of the intermediate portion 5C where the bulging portion 7 is not generated is larger than the terminal width d4 of the base portion 4 and the terminal width d6 of the tip portion 6. That is, the terminal width of the intermediate portion 5C, which is the second intermediate portion including the bending center 11, is larger than the terminal width d4 of the base portion 4 and the terminal width d6 of the tip portion 6 in the state where the electrode terminal 3 is bent, and is smaller than the terminal width d5 of the intermediate portions 5A and 5B which are the first intermediate portions.

[0033] In such a semiconductor device 101, even when a bulging portion 7 is generated in the intermediate portion 5C by bending, since it is smaller than the terminal widths d5 of the intermediate portions 5A and 5B, it is possible to suppress the bulging portions 7 of the adjacent electrode terminals 3 from contacting and being electrically connected to cause insulation failure. Further, regarding the external force applied to the semiconductor device during or after bending, since the intermediate portion 5C has a bent portion 8, a force equal to or greater than that of the base portion 4 and the tip portion 6 is applied. However, in the semiconductor device 101, since the terminal width d7 at the portion where the terminal width of the intermediate portion 5C is the smallest is larger than the terminal width d4 of the base portion 4 and the terminal width d6 of the tip portion 6, sufficient strength can be ensured against such an external force, and breakage of the electrode terminal 3 can be suppressed. Furthermore, it is also possible to suppress deformation and deterioration of bending accuracy of the electrode terminal 3.

[0034] Embodiment 2 In the above Embodiment 1, the semiconductor device 101 in which the intermediate portion 5C is formed into the intermediate portions 5A and 5B having a linear shape parallel to the second direction, that is, the terminal extending direction, and the intermediate portion 5C having a square notch by removing the connection portion, and the lead forming is performed so that the bending center 11 comes to the intermediate portion 5C has been described. In the present Embodiment 2, a semiconductor device 102 in which the notch of the intermediate portion 5C has a triangular shape will be described. Since the difference from Embodiment 1 is only the shape of the intermediate portion 5C formed by removing the connection portion, only this portion will be described, and descriptions of other portions and manufacturing methods will be omitted.

[0035] FIG. 11, FIG. 12, and FIG. 13 are plan views showing an enlarged view of the periphery of the electrode terminal 3 of the semiconductor device 102 according to Embodiment 2. FIG. 11 shows the state when the connection portion is removed, FIG. 12 shows the state after the connection portion is removed, and FIG. 13 shows the state after lead forming. As shown in FIG. 11, the connection portion of the semiconductor device 102 is removed by the mold 25 so as to have a triangular notch that protrudes from the side surface parallel to the extending direction of the intermediate portion 5 of the electrode terminal 3 toward the inside of the intermediate portion 5. As a result, as shown in FIG. 12, the semiconductor device 102 also has the intermediate portions 5A and 5B that are wider than the base portion 4 as in Embodiment 1. However, the side surface of the intermediate portion 5C is different from that in Embodiment 1 and is a triangular notch having one vertex inside the terminal. The width of the terminal at the position corresponding to the vertex 26 of this triangle is larger than the terminal width d4 of the base portion 4 and the terminal width d6 of the tip portion 6. In FIG. 12, a triangular notch is shown as an example, but any shape may be used as long as the length of the notch in the extending direction of the electrode terminal 3 decreases as it goes from the side surface parallel to the extending direction of the intermediate portion 5 of the electrode terminal 3 toward the inside of the intermediate portion 5. For example, an arc-shaped notch or a rounded notch may be used.

[0036] When a triangular notch is formed during the removal of the connection portion, lead forming is performed so that the bending center 11 of the bending portion 8 comes to the vertex 26 of the triangular notch. Then, as shown in FIG. 13, the intermediate portion 5C of the electrode terminal 3 has a shape in which a part of the triangular notch, that is, a part of each of the two sides of the triangle remains, and furthermore, the vertex 26 of the triangle becomes the bending center 11 and a bulging portion 7 is generated there. That is, the intermediate portion 5C has a region where the terminal width becomes narrower toward the bending center 11. At this time, since the width of the bulging portion 7 is also smaller than the terminal width d5 of the intermediate portions 5A and 5B, it is possible to suppress insulation failure due to contact between adjacent electrode terminals 3 and at the same time suppress breakage of the electrode terminal 3 due to insufficient strength, as in Embodiment 1.

[0037] Furthermore, in the present embodiment, by making the notch in the intermediate portion 5C triangular, the width of the bending center 11 with the largest amount of swelling is made the narrowest by removing the connection portion, and then lead forming is performed. As a result, there is an effect that insulation failure between adjacent electrode terminals 3 can be efficiently suppressed. At the same time, even when an error occurs in the alignment between the mold and the electrode terminal 3 during lead forming, since the portion with the narrowest terminal width of the bent portion 8 is likely to become the bending center 11, it is possible to improve the positional accuracy of the bending center 11. Note that these effects are not limited to the case where the notches shown in FIGS. 11 to 13 are triangular, and the same effects can be obtained as long as the shape is such that the terminal width becomes narrower toward the bending center 11.

[0038] In the connection portion removal step as in the present embodiment, a notch is formed in the intermediate portion 5C such that the length of the notch in the extending direction of the electrode terminal 3 decreases as it goes from the side surface parallel to the extending direction of the intermediate portion 5 of the electrode terminal 3 toward the inside of the intermediate portion 5. When lead forming is performed with the tapered portion as the bending center 11, if the lead forming is performed so that the swelling portion 7 does not exceed the widths of the intermediate portions 5A and 5B, a part of the tapered shape will remain on both sides of the swelling portion 7. Therefore, even after the lead forming is performed, it is possible to confirm the application of the technology shown in the present embodiment depending on the presence or absence of a shape in which the terminal width becomes narrower toward the bending center 11.

[0039] Embodiment 3 In the above Embodiment 1 and Embodiment 2, the semiconductor devices 101 and 102 in which the intermediate portion 5A is disposed between the intermediate portion 5C and the base portion 4, and the intermediate portion 5B is disposed between the intermediate portion 5C and the tip portion 6 have been described. In the present Embodiment 3, the semiconductor devices 103 and 104 in which the intermediate portion 5A is disposed between the intermediate portion 5C and the base portion 4, and the intermediate portion 5B is not disposed between the intermediate portion 5C and the tip portion 6, that is, the intermediate portion 5C and the tip portion 6 are directly connected, will be described. Note that since the difference from Embodiment 1 and Embodiment 2 is only the shape of the intermediate portion 5 formed by removing the connection portion, only this portion will be described, and the description of other portions and manufacturing methods will be omitted.

[0040] FIG. 14, FIG. 15, and FIG. 16 are plan views showing an enlarged view of the periphery of the electrode terminal 3 of the semiconductor device 103 according to Embodiment 3. FIG. 14 shows the state when the connection part is removed, FIG. 15 shows the state after the connection part is removed, and FIG. 16 shows the state after lead forming. As shown in FIG. 14, in the semiconductor device 103, the connection part is removed by a mold 27 having a quadrangular notch that protrudes inward at positions corresponding to two corners of a rectangle or a square. As a result, as shown in FIG. 15, the intermediate part 5 has a linearly shaped intermediate part 5C that is wider than the base part 4 and the tip part 6, similar to Embodiment 1, and with respect to the intermediate part 5A, it becomes a quadrangular protrusion 28 that protrudes outward in the width direction of the electrode terminal 3. Also, the intermediate part 5B provided between the intermediate part 5C and the tip part 6 in Embodiment 1 does not exist.

[0041] With the connection part removed in such a shape, lead forming is performed by aligning so that the bending center 11 comes somewhere in the intermediate part 5C. Then, as shown in FIG. 16, the swelling part 7 becomes the largest near the bending center 11. However, since the swelling part 7 is also smaller than the terminal width d5 at the tip of the protrusion 28 of the intermediate part 5A, similar to Embodiment 1 or Embodiment 2, it is possible to suppress problems caused by contact between adjacent electrode terminals 3 and at the same time suppress breakage, deformation, and deterioration of bending accuracy due to insufficient strength.

[0042] Also, FIG. 17, FIG. 18, and FIG. 19 are plan views showing an enlarged view of the periphery of the electrode terminal 3 of the semiconductor device 104, which is a modification of Embodiment 3. FIG. 17 shows the state when the connection part is removed, FIG. 18 shows the state after the connection part is removed, and FIG. 19 shows the state after lead forming. As shown in FIG. 17, in the semiconductor device 104, the connection part is removed by a mold 29 having a notch with a curve that protrudes inward at two corners of a quadrangle. As a result, the shape of the electrode terminal 3 of the semiconductor device 104 has an outer shape consisting of a first side that is a curve where the intermediate part 5A protrudes outward with respect to the electrode terminal 3 and a second side that is a straight line extending in the width direction of the electrode terminal 3, and becomes a protrusion 30 that protrudes in the width direction of the electrode terminal 3. Therefore, the semiconductor device 104 can also achieve the same effects as those of Embodiment 1 or Embodiment 2, similar to the semiconductor device 103.

[0043] Furthermore, in the third embodiment, as shown in FIG. 14 or FIG. 17, in the connection part removal process, a mold 27 or a mold 29 having notches at positions corresponding to two corner parts of a rectangle or a square is used. These molds 27 and 29 are manufactured by further processing notches at two corner parts of a rectangular or square mold member. Compared with the mold 24 manufactured by processing notches at four corner parts used in the first embodiment, the number of notch processing parts is smaller. Therefore, the workability in manufacturing the mold is improved, and it is possible to suppress the manufacturing cost of the mold which is a consumable. Also, since the notch of the intermediate part 5 is not as complicated as that in the first embodiment, the workability is improved in, for example, the management of processing accuracy in the semiconductor device manufacturing process.

[0044] In the third embodiment, the semiconductor devices 103 and 104 in which the intermediate part 5A is arranged between the intermediate part 5C and the base part 4 and the intermediate part 5B is not arranged between the intermediate part 5C and the tip part 6, that is, the intermediate part 5C and the tip part 6 are directly connected, have been described. However, the same effect can be obtained in a form in which the intermediate part 5B is arranged between the intermediate part 5C and the tip part 6 and the intermediate part 5A is not arranged between the intermediate part 5C and the base part 4 and the intermediate part 5C and the base part 4 are directly connected.

[0045] Embodiment 4 In the first embodiment, the semiconductor device 101 in which the intermediate part 5 forms a linear intermediate part 5A and an intermediate part 5B parallel to the terminal extending direction and a rectangular notch intermediate part 5C by removing the connection part, and the lead is formed so that the bending center 11 comes to the intermediate part 5C has been described. In this fourth embodiment, a semiconductor device 105 in which a groove is formed in the rectangular notch intermediate part 5C in the first embodiment will be described. Since the difference from the first embodiment is only the groove formation, only this part will be described, and the description of other parts and the manufacturing method will be omitted.

[0046] FIG. 20 is a plan view showing an enlarged view of the periphery of the electrode terminal 3 after removal of the connection portion of the semiconductor device 105 according to Embodiment 4. As shown in FIG. 20, the semiconductor device 105 also has intermediate portions 5A and 5B that are wider than the root portion 4 and the tip portion 6, similar to Embodiment 1. However, different from Embodiment 1, for the intermediate portion 5C, a groove 40 extending in the width direction of the electrode terminal 3 is provided on one surface of the portion that is a square notch. The surface on which this groove 40 is provided is defined as the first main surface, and the opposite surface is defined as the second main surface.

[0047] In the subsequent lead forming, bending is performed such that the first main surface becomes the inner bending surface and the second main surface becomes the outer bending surface with the position of this groove 40 as the bending center 11. At this time, since the thickness of the electrode terminal 3 is small at the portion of the groove 40, the bulging amount of the bulging portion 7 can be suppressed as compared with the case where there is no groove 40. At the same time, when forming the lead, since the groove 40 becomes the bending center 11, it is easy to perform bending, and there is also an effect of improving the accuracy of the bending position. However, on the other hand, as the groove 40 becomes deeper or wider, the strength of the electrode terminal 3 decreases. Therefore, an appropriate value may be set in consideration of the balance between bendability and strength. This groove processing may be performed in any of the steps before lead forming, and press processing, cutting processing, etc. may be used. Since the bulging portion 7 is more likely to occur on the first main surface side where the member is compressed on the inner bending side rather than on the second main surface side where the member is stretched on the outer bending side, providing the groove 40 on the first main surface has a greater effect of suppressing the bulging amount, but it may also be provided on the second main surface, or on both surfaces.

[0048] By providing the groove 40 in the intermediate portion 5C in this way, it becomes possible to suppress the bulging amount of the bulging portion 7 and improve the accuracy of the bending position. As a result, similar to Embodiment 1, it is possible to suppress problems caused by contact between adjacent electrode terminals 3, and at the same time, it is possible to achieve effects such as suppressing breakage, deformation, deterioration of bending accuracy due to insufficient strength, and improving the positional accuracy of the bending center 11.

[0049] In the fourth embodiment, the shape of the electrode terminal 3 is the same as that described in the first embodiment. However, regardless of this, a groove 40 may be provided in the shape of the electrode terminal 3 in the second and third embodiments. In any case, the effect can be achieved by aligning the bending center 11 and the position of the groove 40.

[0050] In addition, the groove 40 can also be confirmed by analyzing the cross-section of the electrode terminal 3 after bending the electrode terminal 3.

[0051] In the semiconductor device 101 of the first embodiment, as shown in FIG. 3, the bending start point 9 and the bending end point 10 are included in the intermediate portion 5C. However, the bending start point 9 may be included in the root portion 4 or the intermediate portion 5A, and the bending end point 10 may be included in the tip portion 6 or the intermediate portion 5B. That is, it is sufficient that the bending center 11 is included in the intermediate portion 5C. Since the bulging portion 7 is the largest at the bending center 11, if the width d8 of this portion is smaller than the terminal width d5 of the intermediate portion 5A and the intermediate portion 5B, the effect of suppressing the contact between adjacent electrode terminals 3 can be obtained. If a part of the bulging portion 7 reaches the intermediate portion 5A or the intermediate portion 5B due to bending and adjacent electrode terminals 3 come into contact with each other, the curvature of the bending portion 8 may be reduced, and the bending processing conditions may be changed so that the bending start point 9 and the bending end point 10 are included in the range of the intermediate portion 5C. This is the same for the second to fourth embodiments.

[0052] In the first to fourth embodiments, the shape of the intermediate portion 5 of the electrode terminal 3 has been described as a form in which the left and right shapes with respect to the extending direction are all symmetric. However, if the shapes of adjacent electrode terminals 3 are the same, it is not limited to being symmetric. For example, in FIGS. 9, 12, 15, and 18, notches provided on both side surfaces with respect to the second direction, which is the extending direction of the electrode terminal 3 in the intermediate portion 5C of the electrode terminal 3, may be provided on only one side. Also, the notches on both side surfaces may have different shapes. However, if the shapes of both side surfaces of the electrode terminal 3 are made asymmetric, there is a possibility that the electrode terminal 3 may easily bend in the first direction orthogonal to the second direction in lead forming. Therefore, it is desirable to have a symmetric shape with respect to the second direction as described in the first to fourth embodiments.

Explanation of Reference Numerals

[0053] 101, 102, 103, 104, 105 semiconductor devices, 2 encapsulating resin, 3 electrode terminals, 4 root part, 5 middle part, 6 tip part, 7 bulging part, 8 bending part, 9 bending start point, 10 bending end point, 11 bending center, 21 lead frame, 22 connecting part, 23 outer frame, 24, 25, 27, 29 molds, 26 apex of triangle, 28, 30 protrusions, 40 groove

Claims

1. A conductive die bond, a semiconductor element electrically connected to the die bond, a sealing resin which is an insulating resin encapsulating the semiconductor element therein, a plurality of electrode terminals which are electrically connected to the die bond, protrude from the sealing resin, have a root portion which is the root protruding from the sealing resin, a tip portion which is the tip extending from the root portion, and an intermediate portion between the tip portion and the root portion, the plurality of electrode terminals are arranged along a first direction and are provided to protrude from the sealing resin along a second direction orthogonal to the first direction, the intermediate portion includes a first intermediate portion having a width in the first direction wider than that of the root portion and the tip portion, and a second intermediate portion having a width in the first direction wider than that of the root portion, narrower than that of the first intermediate portion in the first direction, and having a bent portion bent toward a third direction orthogonal to the first direction and the second direction, a semiconductor device.

2. The bent portion has a bending center which is the center between a bending start point which is the start point of bending and a bending end point which is the end point of bending, and the bending center is located in the second intermediate portion. The semiconductor device according to claim 1.

3. The bending start point and the bending end point are located in the second intermediate portion. The semiconductor device according to claim 2.

4. The second intermediate portion has a bulging portion with a width in the first direction bulged, and the width of the second intermediate portion in the first direction is maximum at a position where the bulging portion is arranged. The semiconductor device according to any one of claims 1 to 3.

5. The second intermediate portion has a region where the width in the first direction becomes narrower as it goes from either one or both of the bending start point or the bending end point toward the bending center. The semiconductor device according to any one of claims 2 to 4.

6. The electrode terminal has the first intermediate portion at least in one of between the second intermediate portion and the root portion or between the second intermediate portion and the tip portion. The semiconductor device according to any one of claims 1 to 5.

7. The second intermediate portion has a groove extending in the first direction on the inner surface of the bend, and the groove is formed at a position overlapping the bending center on the inner surface of the bend. The semiconductor device according to any one of claims 1 to 6.

8. Processing a plate-shaped metal material to form a base portion of electrode terminals arranged in a plurality along a first direction and extending in a second direction orthogonal to the first direction, a tip portion having a tip connected to an outer frame of the metal material, and intermediate portions provided between the base portion and the tip portion and each connected by a connection portion in the first direction; Mounting a semiconductor element on the metal material on which the base portion, the tip portion, and the intermediate portions are formed so as to be electrically connected, and performing a mounting and molding process of encapsulating the semiconductor element with an insulating resin; Removing the connection portion and the outer frame, and forming a first intermediate portion having a width in the first direction that is wider than those of the base portion and the tip portion in the intermediate portion, and a second intermediate portion having a width in the first direction that is wider than that of the base portion and narrower than that of the first intermediate portion in the first direction; A method of manufacturing a semiconductor device, comprising a lead forming step of bending the electrode terminal in a third direction orthogonal to the first direction and the second direction in the second intermediate portion.

9. The method of manufacturing a semiconductor device according to claim 8, wherein the lead forming step bends the electrode terminal so that the second intermediate portion has a bending center that is the center between a bending start point that is the start point of bending and a bending end point that is the end point of bending.

10. The method of manufacturing a semiconductor device according to claim 9, wherein the lead forming step bends the electrode terminal so that the second intermediate portion has the bending start point and the bending end point.

11. Before the second forming step, a design step of setting a relationship between the width of the second intermediate portion in the first direction in the second forming step and the curvature of bending in the lead forming step is further provided so that the width of the second intermediate portion in the first direction becomes narrower than the width of the first intermediate portion in the first direction after the lead forming step. The method of manufacturing a semiconductor device according to claim 8.

12. The method of manufacturing a semiconductor device according to any one of claims 8 to 11, wherein in the second forming step, the first intermediate portion and the second intermediate portion are formed by press punching.

13. In the second forming step, a notch having an arc portion or a taper portion is formed on a side surface of the second intermediate portion. The method of manufacturing a semiconductor device according to any one of claims 9 to 12, wherein in the lead forming step, the electrode terminal is bent so that the notch formed in the second forming step overlaps with the bending center.

14. The method of manufacturing a semiconductor device according to any one of claims 8 to 13, wherein in the second forming step, the first intermediate portion is formed at least on one of between the second intermediate portion and the base portion or between the second intermediate portion and the tip portion.

15. Before the lead forming step, there is a groove processing step of forming a groove extending in the width direction in the first direction of the electrode terminal on the first surface of the second intermediate portion, The method of manufacturing a semiconductor device according to any one of claims 9 to 14, wherein in the lead forming step, the electrode terminal is bent with the groove as the bending center so that the first surface side becomes the bending inner surface.

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