Film-forming apparatus and method for manufacturing electronic device

Abstract

To provide a film deposition apparatus capable of improving detection accuracy of a vapor deposition state and to provide an electronic device manufacturing method.SOLUTION: The apparatus comprises: an evaporation source 100 provided in a chamber 10 and emitting a vapor deposition material; a film thickness sensor 30 for detecting at least one of thickness of a film of the vapor deposition material formed on a substrate S by vapor deposition treatment, and an emission amount of the vapor deposition material from the evaporation source 100 in the vapor deposition treatment; a particle sensor 200 for detecting particles in the chamber 10; and a control device 40 for controlling the evaporation source 100 based on detection results of the film thickness sensor 30 and detection results of the particle sensor 200.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present technology relates to a film forming apparatus and a method for manufacturing an electronic device.

Background Art

[0002] In a film forming apparatus that performs vacuum evaporation, an evaporation source having a crucible for accommodating an evaporation material is provided. In the evaporation source, the crucible is heated to evaporate or sublime the evaporation material, whereby the material is deposited on a substrate to form a thin film. Patent Document 1 discloses providing a particle sensor for detecting clusters of deposition particles directly above the evaporation source in such a film forming apparatus.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a method of determining the state of an evaporation source or the state of an evaporation operation by the evaporation source using only a single detection means as in the prior art, it is difficult to accurately determine the state of the evaporation source. For example, a change in the state that does not significantly affect the evaporation process may be output as a detection result indicating an abnormality due to the inherent characteristics of the detection means. Conversely, there may be a state change that is difficult to detect with only one type of detection means. In view of such problems, an object of the present technology is to more accurately determine the state of an evaporation source or the state of an evaporation operation by the evaporation source.

Means for Solving the Problems

[0005] A film forming apparatus according to one aspect of the present invention includes: an evaporation source provided in a chamber for releasing an evaporation material; First detection means for detecting at least one of the thickness of the film of the vapor deposition material formed on the substrate by vapor deposition treatment and the amount of release of the vapor deposition material from the evaporation source in the vapor deposition treatment; Second detection means for detecting particles in the chamber; Control means for controlling the evaporation source based on the detection result of the first detection means and the detection result of the second detection means; A film forming apparatus, when it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on at least one of the detection result of the first detection means and the detection result of the second detection means, the control means stops the vapor deposition process by the evaporation source while continuing the detection operations by the first detection means and the second detection means, before a first period elapses from the stop of the vapor deposition process, when it is determined that the state of the evaporation source is normal based on the detection result of the first detection means and it is determined that the state of the evaporation source is normal based on the detection result of the second detection means, the control means resumes the vapor deposition process by the evaporation source It is characterized by this.

Effect of the Invention

[0006] According to the embodiment, the state of the evaporation source or the state of the vapor deposition operation by the evaporation source can be judged more accurately.

Brief Description of the Drawings

[0007]

Figure 1

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Best Mode for Carrying Out the Invention

[0008] Hereinafter, with reference to the drawings, embodiments for carrying out the present invention will be exemplarily and detailedly described based on examples. However, dimensions, materials, shapes, relative arrangements, etc. of the components described in this example are not intended to limit the scope of the present invention only to them unless otherwise specifically described.

[0009] (Embodiment) With reference to FIGS. 1 and 2, a film forming apparatus according to the present embodiment will be described. The film forming apparatus according to the present embodiment is a vacuum evaporation apparatus that forms a thin film on a substrate using a vapor deposition material. FIG. 1 is a schematic configuration diagram of the film forming apparatus according to the present embodiment, which briefly shows various configurations. FIG. 2 is a schematic cross-sectional view of an evaporation source and a particle sensor provided in the film forming apparatus according to the present embodiment.

[0010] The film forming apparatus 1 includes a chamber (film forming chamber) 10 configured to be in a state close to vacuum (reduced pressure atmosphere) inside by a vacuum pump 20, and an evaporation source 100 disposed inside the chamber 10. The evaporation source 100 plays a role of evaporating or sublimating a material (vapor deposition material) of a substance to be deposited on the substrate S by heating the material. The substance evaporated or sublimated by the evaporation source 100 adheres to the film forming surface (the surface on the evaporation source 100 side) of the substrate S installed inside the chamber 10, thereby forming a thin film on the substrate S. A mask M having an opening formed according to the shape of the thin film to be formed is disposed on the film forming surface side of the substrate S, and vapor deposition treatment is performed in a state where the substrate S and the mask M are positioned.

[0011] Between the substrate S and the evaporation source 100, a shutter that can be opened and closed is arranged, and by opening and closing this shutter, the presence or absence of the deposition material on the substrate S can be controlled. More specifically, in addition to the main shutter 50, when a plurality of evaporation sources 100 are provided, if necessary, source shutters 60 respectively arranged for each of the individual evaporation sources 100 can be provided. The main shutter 50 is composed of a plurality of shielding plates 51, a drive source 52 that drives these plurality of shielding plates 51, a mechanism for opening and closing the plurality of shielding plates 51, and the like. Generally, the main shutter 50 is arranged at a plurality of locations, and by controlling these simultaneously, it can be closed to cover the entire surface of the substrate S or opened to release the entire surface, thereby controlling the presence or absence of the deposition material on the substrate S. Further, the source shutter 60 includes a drive source 61 such as a motor, a rotating shaft 62 that rotates forward and backward by the drive source 61, and a shielding plate 63 that moves by the rotating shaft 62. If a configuration in which the source shutter 60 configured in this way is provided for each of the plurality of evaporation sources 100 is adopted, it is possible to control so that the deposition process is performed only by the desired evaporation source 100. By providing a shutter as described above, while continuing to release the deposition material from the evaporation source 100, by covering the discharge port of the evaporation source 100 with the shutter, the deposition process by the evaporation source 100 can be stopped.

[0012] Here, in order to make the film thickness of the thin film formed on the substrate S uniform, it is preferable to deposit the deposition material at the molecular level on the substrate S. For that purpose, it is advisable to stably maintain the state of the evaporation source 100, or the operating state of the evaporation source 100 (hereinafter referred to as the deposition state). The main factors that interfere with this are considered to be the scattering of the clustered deposition material and the occurrence of splash. Note that splash is a phenomenon in which, due to sudden boiling or the like, the deposition material jumps out of the evaporation source 100 in a liquid or solid state without evaporating or sublimating. Since the clustered deposition material mainly scatters upward, It may adhere to the substrate S. Also, the vapor deposition material that has splashed out mainly falls in a parabolic trajectory due to gravity. When the frequency of splash increases, that is, when the vapor deposition state becomes unstable, it becomes difficult to manage the film formation process uniformly and stably. As described above, the clustered vapor deposition material and the vapor deposition material that has splashed out have different scattering manners. In particular, it is considered difficult to detect the latter by the conventional detection method. Therefore, in the present embodiment, a configuration in which two types of detection means are provided is adopted. Hereinafter, this point will be described.

[0013] Inside the chamber 10, a film thickness sensor 30 as a first detection means and a particle sensor 200 as a second detection means for detecting the scattered vapor deposition material are provided. The film thickness sensor 30 is used to detect at least one of the thickness of the film of the vapor deposition material formed on the substrate S by the vapor deposition process and the amount of the vapor deposition material released from the evaporation source 100 in the vapor deposition process. As this film thickness sensor 30, a film thickness meter using a crystal oscillator can be preferably used. In this case, by detecting the film thickness of the material attached to the crystal oscillator, the film thickness of the thin film formed on the substrate S and the film formation rate (the time change rate of the film thickness) can be recognized. Also, it is possible to determine whether the vapor deposition state is appropriate based on whether the changes in the film thickness and the film formation rate detected by the film thickness sensor 30 are normal. That is, when the detection result of the film thickness sensor 30 is within a predetermined range, the state of the evaporation source 100 is determined to be normal based on the detection result of the film thickness sensor 30, and when it is not within the predetermined range, the state of the evaporation source 100 is determined to be abnormal based on the detection result of the film thickness sensor 30. For example, when continuously detecting the film formation rate and showing a deviation of 5% or more from a predetermined value, it can be determined that the vapor deposition state is abnormal. Here, the value of 5% is an example, and any value can be set without being limited to this value. In addition, it is also possible to determine that it is abnormal when the number of times the film formation rate value deviates from the predetermined value reaches a predetermined number of times or more, or when the film formation rate continuously deviates from the predetermined value for a predetermined time or more.

[0014] The particle sensor 200 is generally used to detect particles such as impurities by detecting the particle size and the number of particles. With this particle sensor 200, it is also possible to detect scattered deposition materials, particularly deposition materials that cluster and fall, or deposition materials that fall in a liquid or solid state. Thereby, it is possible to determine whether the deposition state is appropriate. As the particle sensor 200, a particle sensor using a laser light scattering method or a light shielding method can be used. With such a particle sensor 200, the number and size of particles having a size of about 200 nm to about 100 μm can be detected.

[0015] As described above, as the detection result of the particle sensor 200, the number of particles detected per unit time can be obtained. Thereby, when the detection result of the particle sensor 200 does not exceed a predetermined threshold value, the state of the evaporation source 100 is determined to be normal based on the detection result of the particle sensor 200, and when it exceeds the predetermined threshold value, the state of the evaporation source 100 is determined to be abnormal based on the detection result of the particle sensor 200. For example, the number of particles having a size of 1 μm or more is continuously detected, and when the number of particles detected in one minute is 3 or more, it can be determined that the deposition state is abnormal. Here, the size value of 1 μm and the standard of 3 or more per minute are examples, and the value is not limited to this, and any value can be set. A criterion for comprehensively judging from the size and the number may be used.

[0016] Furthermore, the film forming apparatus 1 includes a control device 40 as control means for controlling the operation of the evaporation source 100. In the control device 40 according to the present embodiment, the detection result of the film thickness sensor 30 and the detection result of the particle sensor 200 are used as parameters for determining the operation control of the evaporation source 100.

[0017] Note that the control device 40 according to this embodiment is configured to control the operation of the entire film forming apparatus 1, not only the evaporation source 100, but also the vacuum pump 20, the substrate transfer mechanism, the shutter mechanism, and the like. Since the configuration of the control device itself for controlling various devices is a known technique, a detailed description thereof will be omitted. Generally, the control device includes a CPU that performs arithmetic processing and the like based on input data to issue various commands, and storage means such as a RAM that temporarily stores input data and a ROM that stores a program in advance. As shown by the dotted line in FIG. 1, the control device 40 and various members may exchange data by being connected by wire, or may transmit and receive data wirelessly.

[0018] The evaporation source 100 includes a crucible 110 that houses the evaporation material m, a heating device 113 that heats the crucible 110, and a reflector 115 that suppresses heat radiation to the surroundings of the crucible 110 and efficiently heats the crucible 110. The crucible 110 includes a container 111 that is the crucible body, and a cap 112 provided at the opening of the container 111 as a member that restricts the material discharge direction (deposition direction). Examples of such a cap 112 include a structure provided with a plurality of through holes 112a for allowing the evaporated or sublimated evaporation material to pass from the evaporation source 100 toward the substrate S. In such a structure, the cap 112 has a function as a shielding member and prevents the material from directly reaching the substrate S from inside the crucible. Further, the cap 112 is disposed between the evaporation material m accommodated in the crucible 110 (container 111) and the substrate S to be formed into a film, and preferably configured to block all virtual straight lines connecting any point on the film forming surface of the substrate S and any point on the surface of the evaporation material m accommodated in the crucible 110. By adopting such a configuration, even if a part of the evaporation material jumps out in a liquid or solid state due to bumping from the surface of the accommodated evaporation material m, it is possible to suppress such evaporation material from directly adhering to the substrate S. As shown in FIG. 2, it is also possible to configure such that the evaporation material evaporated or sublimated from the center of the crucible 110 is discharged by providing a nozzle 112X having an opening at the center. Whether or not to provide this nozzle 112X is optional.

[0019] In the present invention, a particle sensor 200 for detecting the deposition material that is released from the crucible 110 and scattered is provided beside the crucible 110. That is, the particle sensor 200 is arranged so that the detection range includes the region where the deposition material ejected by splash from the crucible 110 scatters. In other words, the particle sensor 200 is provided at a position for detecting the deposition material ejected by splash from the crucible. Here, regarding the region where the deposition material ejected by splash scatters, the range varies depending on the dimensional shapes of various members constituting the evaporation source 100, the heating temperature, the type of the deposition material m, and the like. Therefore, by performing experimental observations in a timely manner according to these various conditions, the region (range) where the deposition material ejected by splash scatters can be defined.

[0020] And it is preferable that the detection part 210 of the particle sensor 200 is arranged so as to face upward in the vertical direction. Further, at least a part of this detection part 210 is arranged vertically below the discharge port of the deposition material in the crucible 110. The horizontal distance d (d1 when the nozzle 112X is provided) between the discharge port of the deposition material in the crucible 110 and the detection part 210 is preferably set to be greater than 0 cm and 70 cm or less, and more preferably 50 cm or less.

[0021] This is because in the deposition experiments conducted using various evaporation sources and metal materials, the deposition material ejected by splash was observed within 70 cm around the evaporation source, and was significantly observed within 50 cm.

[0022] By adopting such an arrangement of the particle sensor 200, it is possible to effectively detect the deposition material that falls after being released from the crucible 110. Also, such an arrangement is effective when controlling the film formation process using the control method described later.

[0023] Further, a reflector 220 that blocks heat from the crucible 110 is disposed between the particle sensor 200 and the crucible 110. The reflector 220 according to the present embodiment is configured by a cylindrical member so as to surround the periphery of the particle sensor 200. Depending on the heat resistance of the particle sensor 200, the reflector 220 may not be provided, or instead of surrounding the periphery, a configuration may be adopted in which a flat-plate reflector is provided between the crucible 110.

[0024] <Advantages of the film forming apparatus according to the present embodiment> According to the film forming apparatus 1 according to the present embodiment, a configuration is adopted in which the particle sensor 200 provided beside the crucible 110 detects the vapor deposition material that scatters. Many of the clustered vapor deposition materials and the vapor deposition materials that have jumped out due to splash fall immediately after coming out of the discharge port. Therefore, the detection accuracy of the vapor deposition state can be improved as compared with the case of detecting above the discharge port.

[0025] This embodiment is particularly effective when the crucible 110 is provided with a cap 112 having a shielding function. Even when the liquid or solid vapor deposition material generated by bumping is suppressed from scattering toward the substrate S by the cap, by adopting the configuration of this embodiment, it is possible to accurately detect that the vapor deposition state is unstable. In addition, by configuring the arrangement of the detection portion 210 of the particle sensor 200 and the positional relationship between the vapor deposition material discharge port and the detection portion 210 in the crucible 110 as described above, it is possible to more accurately detect the clustered and falling vapor deposition materials and the vapor deposition materials that fall in a liquid or solid state.

[0026] Further, in the present embodiment, the control device 40 adopts a configuration in which the operation of the film forming apparatus is controlled based on both the detection result of the film thickness sensor 30 and the detection result of the particle sensor 200. Therefore, the detection accuracy of the vapor deposition state can be improved, and appropriate control can be performed according to the vapor deposition state.

[0027] Note that the vapor deposition material in this embodiment is not particularly limited. For the film forming apparatus 1 according to this embodiment, its effect is particularly exhibited when the vapor deposition material is a metal material. In particular, when the vapor deposition material is a metal material that exhibits sublimability during vapor deposition, such as magnesium (Mg) or ytterbium (Yb), large-sized particles are likely to be generated due to clustering or the like, and thus the present invention functions effectively. In addition, for heavy metal materials such as Ag and Yb, it is considered that the detection by the above-described sensor arrangement configuration functions effectively because the weight of the particles detected by the particle sensor is relatively heavy.

[0028] Hereinafter, some specific configurations of the evaporation source, the arrangement relationship of the particle sensor 200 at that time, and specific examples of the control procedure of the evaporation source will be described.

[0029] (Example 1) With reference to FIGS. 3 and 4, the film forming apparatus according to Example 1 will be described. FIG. 3 is a schematic configuration diagram of the film forming apparatus according to Example 1. FIG. 3(a) is a plan view showing the evaporation source and the particle sensor in the film forming apparatus, FIG. 3(b) is a schematic cross-sectional view of the main part of the film forming apparatus (corresponding to the V1-V1 cross-section in FIG. 3(a)), and FIG. 3(c) is an operation explanatory view of the source shutter. FIG. 4 is a control flowchart of the film forming apparatus according to Example 1.

[0030] <Configuration of the film forming apparatus> In the film forming apparatus 1 according to this embodiment, the chamber 10, the vacuum pump 20, and the film thickness sensor 30 , the substrate S and the mask M are as described in the above embodiment, and thus the description thereof is omitted.

[0031] The evaporation source assembly 100A according to this embodiment includes a plurality of evaporation sources 100, a turntable 120 that rotates the plurality of evaporation sources 100, and a drive source 130 such as a motor that rotates the turntable 120. The evaporation source assembly 100A configured as described above is sometimes called a point source revolver type. In the evaporation source assembly 100A, a vapor deposition process is performed by one of the plurality of evaporation sources 100. The vapor deposition process is a series of processes for forming a film composed of a vapor deposition material accommodated in the evaporation source 100 on the substrate X. That is, when the crucible 110 mounted on the evaporation source 100 is heated, the accommodated vapor deposition material evaporates or sublimes and is released from the crucible 110, and a thin film is formed on the surface of the substrate S. In FIG. 3, for the sake of easy understanding of the configuration of various members, only the main configuration, the crucible 110, of the evaporation source 100 is shown schematically.

[0032] In this type of evaporation source assembly 100A, at the timing when the vapor deposition process proceeds and the vapor deposition material accommodated in the evaporation source 110 is insufficient, the drive source 130 rotates the turntable 120 so that the vapor deposition process is continued by the next evaporation source 100. The arrow in FIG. 3 indicates the rotation direction of the turntable 120. In the figure, the vapor deposition process is performed by the evaporation source 100 arranged at the position indicated by P1. Also, in the figure, P2 indicates the standby position of the evaporation source 100 for performing the vapor deposition process after the vapor deposition process by the evaporation source 100 arranged at the position P1 is completed. The evaporation source 100 arranged at this position P2 is pre-heated before the vapor deposition process by the evaporation source 100 arranged at the position P1 is completed, so that the vapor deposition process can be performed early after the rotation operation by the turntable 120.

[0033] The operation of switching the evaporation source 100 that performs the vapor deposition process as described above is called cell change. Generally, an odd number of evaporation sources 100 are arranged on the turntable 120. Another evaporation source 100 is arranged between the evaporation source 100 where the vapor deposition process is performed and the evaporation source 100 that waits for the next vapor deposition process. This is to suppress thermal interference between the evaporation source 100 where the vapor deposition process is performed and the evaporation source 100 that waits for the next vapor deposition process. Assuming the number of evaporation sources 100 placed on the turntable 120 is N, the vapor deposition process by all the evaporation sources 100 can be performed by [N - 1] cell changes.

[0034] The timing for performing the cell change can be set based on the timing when the integrated film thickness detected by the film thickness sensor reaches a predetermined film thickness, the time when the vapor deposition process is performed, and the like.

[0035] In this embodiment, one film thickness sensor is provided for each evaporation source assembly. That is, there are two film thickness sensors (omitted in FIG. 3) in the chamber.

[0036] And above the plurality of evaporation sources 100 in the vertical direction, a cover 140 with an opening 141 formed at a position facing the crucible 110 of the evaporation source 100 where the vapor deposition process is performed is provided so that the vapor deposition material evaporated or sublimated is released only by the crucible 110 of the evaporation source 100 where the vapor deposition process is performed (see FIG. 3(b)). In FIG. 3(a), for the sake of convenience of explanation, the cover 140 and the like are omitted.

[0037] In this embodiment, in addition to the main shutter (omitted in FIG. 3) shown in the above embodiment, corresponding to the two evaporation source assemblies 100A, source shutters 60 are provided at a total of two locations, one at each location. By opening and closing these shutters, the arrival of the material to the substrate S can be controlled on and off. That is, by opening and closing the shutters, the execution and non - execution of the vapor deposition process can be switched. In the source shutter 60, the opening 141 of the cover 140 is closed by a shielding plate 63 that moves by the forward and reverse rotation of the rotation shaft 62 By opening and closing, it is possible to switch between executing and not executing the vapor deposition process by the desired evaporation source assembly 100A. In Fig. 3(c), when viewed from above in the vertical direction, the left side shows the state where the opening 141 is closed, and the right side shows the state where the opening 141 is open.

[0038] In this embodiment, in Figs. 3(a) and 3(b), the crucible in the left evaporation source assembly 100A is filled with Ag as a material, and the right evaporation source assembly 100A is filled with Mg. With such a configuration, it is possible to form a mixed film or a laminated film of Ag and Mg.

[0039] Also, in the film forming apparatus 1 according to this embodiment, two evaporation source assemblies 100A configured as described above are provided side by side in the chamber 10. And one particle sensor 200 is arranged at the central position between the two evaporation source assemblies 100A. Regarding the arrangement of the detection portion 210 of the particle sensor 200 and the positional relationship between each discharge port of the vapor deposition material in the two crucibles 110 where the vapor deposition process is performed and the detection portion 210, it is as described in the above embodiment.

[0040] In this embodiment, the horizontal distance between the discharge port of the crucible and the detection portion 210 is 400 mm, and the detection portion 210 is at a position 150 mm lower than the discharge port.

[0041] <Control Procedure of Evaporation Source> In the film forming apparatus 1, the evaporation source 100 is heated, and after the film forming rate detected by the film thickness sensor 30 stabilizes at a predetermined value, the film forming process is started (STAS). According to an instruction from the control device 40, the substrate is carried in, the positioning of the substrate S and the mask M is performed, the substrate is rotated, and the evaporation process is executed by opening the shutter. At this time, in each evaporation source assembly 100A, the evaporation process by the evaporation source 100 arranged at the position P1 is executed (STA1). After a film of a predetermined thickness is formed on the substrate, the substrate is carried out and the next substrate is carried in, and the substrates are successively exchanged to execute film formation. During the execution of this evaporation process, the detection signal from the film thickness sensor 30 and the detection signal from the particle sensor 200 are continuously sent to the control device 40. In the control device 40, it is determined whether the detection result by the film thickness sensor 30 is abnormal (STA2), and whether the detection result by the particle sensor 200 is abnormal (STA3). When the control device 40 determines that both are normal (not abnormal), it determines whether the integrated film thickness obtained by the film thickness sensor 30 has reached t (STA4). The integrated film thickness is the total amount of the film thickness detected by the film thickness sensor 30 during the period from the start of heating (start of use) of the evaporation source to the evaluation time, and is substantially proportional to the amount of the material used. t is set based on the amount of the evaporation material m accommodated in the crucible 110 of the evaporation source 100. When the integrated film thickness reaches t, it is determined that the remaining amount of the evaporation material m accommodated in the crucible 110 has become insufficient. As long as the detection results by each sensor are all normal and the integrated film thickness does not reach t, the evaporation process is executed and the film formed substrates are continuously produced. Note that the value of the integrated film thickness t is reset according to the amount of the evaporation material m accommodated in the corresponding crucible 110 each time the cell is changed.

[0042] In step STA4, when it is determined that the integrated film thickness has reached t, the control device 40 determines whether or not the number of cell changes has reached n (STA5). In this embodiment, since there are seven evaporation sources 100, n = 7 - 1 = 6. If the number of cell changes has not reached n, a cell change is performed (STA6), and the evaporation source 100 waiting at position P2 moves to position P1, and the vapor deposition process continues (STA1). In step STA5, when it is determined that the number of cell changes has reached n, it means that the vapor deposition process by all the evaporation sources 100 has been completed, and the vapor deposition process ends (STAE). After that, after stopping the heating of the evaporation source and cooling down, the inside of the chamber 10 is returned to atmospheric pressure, and various maintenance operations such as cleaning and replenishing the evaporation material m are performed on the crucibles 110 of all the evaporation sources 100.

[0043] And in step STA2, when it is determined that the detection result by the film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is normal (not abnormal) (STA7), the control device 40 stops the vapor deposition process by closing the main shutter while continuing the detection operations by the respective sensors (STA8). Then, the control device 40 determines whether or not the elapsed time since the vapor deposition process was stopped has reached a predetermined first period i1 (STA9). Note that as long as the detection result by the film thickness sensor 30 is abnormal and the normal state continues for the detection result by the particle sensor 200, steps STA2, STA7, STA8, and STA9 are repeated. If it is determined that the detection results from both sensors are normal before the first period i1 has been reached after the vapor deposition process has been stopped (STA2, STA3), the vapor deposition process is restarted after passing through step STA4 (STA1).

[0044] Before reaching the first period i1 after the vapor deposition process is stopped, if it is not determined that the detection results from both sensors are normal, the control device 40 determines whether the number of cell changes has reached n (STA5). Depending on this determination, as described above, a cell change is performed (STA6), and the vapor deposition process continues or the vapor deposition process ends (STAE).

[0045] Also, in step STA2, if it is determined that the detection result by the film thickness sensor 30 is normal (not abnormal) and the detection result by the particle sensor 200 is determined to be abnormal (STA3), the control device 40 stops the vapor deposition process while continuing the detection operations by each sensor (STA8). The subsequent procedure is the same as above. However, it is different from the above in that steps STA2, STA3, STA8, and STA9 are repeated as long as the detection result by the film thickness sensor 30 is normal and the abnormal state continues for the detection result by the particle sensor 200.

[0046] And in step STA2, if it is determined that the detection result by the film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is also determined to be abnormal (STA7), the control device 40 determines whether the number of cell changes has reached n (STA5). Depending on this determination, as described above, a cell change is performed (STA6), and the vapor deposition process continues or the vapor deposition process ends (STAE).

[0047] The period i1 depends on the device configuration and materials, but can be set in the range of several tens of seconds to several tens of minutes.

[0048] As described above, in this embodiment, when it is determined that there is an abnormality in only the detection result of either the film thickness sensor 30 or the particle sensor 200, the deposition process is stopped while the detection operations by the respective sensors are continued. Then, when it is determined that the detection results of both are normal within a predetermined period (the first period), the deposition process is resumed. This is because when it is determined that only the detection result of the particle sensor 200 is abnormal, the cause is likely to be other than the evaporation source 100, for example, due to a drive mechanism or the like. Also, when it is determined that only the detection result of the film thickness sensor 30 is abnormal, it is highly likely that it is caused by some noise or mild bumping and is highly likely to recover.

[0049] On the other hand, when it is determined that there is an abnormality in the detection results of both the film thickness sensor 30 and the particle sensor 200, control is performed to end the deposition process by the evaporation source 100 (the crucible 110 arranged at the position P1) that was performing the deposition process. In such a case, it is highly likely that the cause of the abnormality is in the crucible of the evaporation source 100, and if the deposition process is resumed, the abnormal state is highly likely to recur. And even in such a case, since the cell cleaning is performed and the deposition process is continued, the productivity as a film forming apparatus can be maintained. Since the cell cleaning is performed and the deposition process is continued, the productivity as a film forming apparatus can be maintained.

[0050] In the flow shown in FIG. 4, although STA2, STA3, and STA7 are described in time series, the determination may be made using the detection results at the same time. In the determination of the abnormality of the deposition state, it is preferable to use the determination at the same time by both sensors.

[0051] In the apparatus configuration of this embodiment, by arranging the particle sensors at appropriate positions, it is possible to detect the deposition state with high accuracy even with a small number of particle sensors (less than the number of evaporation sources). Also, since the film forming process is controlled using both the particle sensor and the film thickness sensor, a film forming apparatus with a high yield and high throughput can be obtained. In particular, during continuous production, a film forming apparatus with a short downtime of the apparatus can be obtained.

[0052] (Example 2) Referring to FIGS. 5 and 6, the film forming apparatus according to Example 2 will be described. FIG. 5 is a schematic configuration diagram of the film forming apparatus according to Example 2. FIG. 5(a) is a plan view showing an evaporation source and a particle sensor in the film forming apparatus, and FIG. 5(b) is a schematic cross-sectional view of a main part of the film forming apparatus (corresponding to the V2-V2 cross-section in FIG. 5(a)). FIG. 6 is a control flow diagram of the film forming apparatus according to Example 2.

[0053] <Configuration of the Film Forming Apparatus> In the film forming apparatus 1 according to this example, the chamber 10, the vacuum pump 20, the film thickness sensor 30, the substrate S, and the mask M are as described in the above embodiment, and thus the description thereof is omitted.

[0054] The configuration of the evaporation source 100 according to this example is as described in the above embodiment. In the film forming apparatus 1 according to this example, in the chamber 10, three evaporation sources 100 are respectively provided at positions that are the vertices of an equilateral triangle when viewed from above. And, one particle sensor 200 is arranged at the position that is the center of this equilateral triangle. Since one film thickness sensor is arranged for each evaporation source 100, it has three film thickness sensors (omitted in FIG. 5). The arrangement of the detection part 210 of the particle sensor 200 and the positional relationship between each discharge port of the evaporation material in the three crucibles 110 and the detection part 210 are as described in the above embodiment. In this example, the horizontal distance between the discharge port of the crucible and the detection part 210 is 500 mm, and the detection part 210 is at a position 100 mm lower than the discharge port.

[0055] In this example, a main shutter (omitted in FIG. 5) is arranged below the substrate S facing the film forming surface of the substrate S. By opening and closing this main shutter, it is possible to switch between execution (film deposition) and non-execution (non-film deposition) for the film deposition process from all the evaporation sources 100 to the substrate S.

[0056] In this embodiment, all the evaporation sources 100 are filled with LiF (lithium fluoride). With such a configuration that enables simultaneous evaporation from three evaporation sources 100, it is possible to form a LiF film at a high deposition rate.

[0057] <Control Procedure of Evaporation Source> In the film forming apparatus 1, the evaporation source 100 is heated, and after the film forming rate detected by the film thickness sensor 30 stabilizes at a predetermined value, the film forming process is started (STBS). According to an instruction from the control device 40, the substrate is loaded, the positioning of the substrate S and the mask M is performed, the substrate is rotated, and the evaporation process is executed by opening the main shutter (STB1). Film formation of a predetermined film thickness is performed on the substrate After that, the substrate is unloaded and the next substrate is loaded, and the substrates are successively exchanged to perform film formation.

[0058] During the execution of the evaporation process, the detection signal from the film thickness sensor 30 and the detection signal from the particle sensor 200 are continuously sent to the control device 40. In the control device 40, it is determined whether the detection result by the film thickness sensor 30 is abnormal (STB2), and whether the detection result by the particle sensor 200 is abnormal (STB3). When the control device 40 determines that both are normal (not abnormal), it determines whether the integrated film thickness obtained by the film thickness sensor 30 has reached t (STB4). The integrated film thickness t is as described in Example 1. As long as the detection results by each sensor are all normal and the integrated film thickness has not reached t, the evaporation process continues to be executed.

[0059] In step STB4, when it is determined that the integrated film thickness has reached t, the evaporation process ends (STBE). After that, the heating of the evaporation source 100 is stopped and the temperature is lowered, and then the inside of the chamber 10 is returned to atmospheric pressure, and various maintenance operations such as cleaning and replenishing the evaporation material m are performed on the crucibles 110 of all the evaporation sources 100.

[0060] And in step STB2, when it is determined that the detection result by at least one film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is normal (not abnormal) (STB5), the control device 40 stops the vapor deposition process by closing the main shutter while continuing the detection operations by each sensor (STB6). Then, the control device 40 determines whether the elapsed time since the vapor deposition process was stopped has reached a predetermined first period i1 (STB7). Note that steps STB2, STB5, STB6, and STB7 are repeated as long as the detection result by the film thickness sensor 30 is abnormal and the normal state continues for the detection result by the particle sensor 200. If it is determined that the detection results from both sensors are normal before the first period i1 has elapsed since the vapor deposition process was stopped (STB2, STB3), the vapor deposition process is restarted after passing through step STB4 (STB1).

[0061] If it is not determined that the detection results from both sensors are normal before the first period i1 has elapsed since the vapor deposition process was stopped, the vapor deposition process ends (STBE).

[0062] Also, in step STB2, when it is determined that the detection result by the film thickness sensor 30 is normal (not abnormal) and the detection result by the particle sensor 200 is abnormal (STB3), the control device 40 also stops the vapor deposition process by closing the main shutter while continuing the detection operations by each sensor (STB6). The subsequent procedure is the same as above. However, it is different from the above in that steps STB2, STB3, STB6, and STB7 are repeated as long as the detection result by the film thickness sensor 30 is normal and the abnormal state continues for the detection result by the particle sensor 200.

[0063] And, in step STB2, when it is determined that the detection result by at least one film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is also determined to be abnormal (STB5), the control device 40 determines whether the number of times of abnormal detection for both exceeds a predetermined X (STB8). Note that regarding this number of abnormal detections, it may be the total number of abnormal detections by both, or it may be the number of times of abnormal detection by both within a certain period.

[0064] When the number of abnormal detections has not reached X, the control device 40 closes the main shutter to stop the deposition process while continuing the detection operations by each sensor (STB9). After that , the control device 40 determines whether the elapsed time since the deposition process was stopped has reached a predetermined second period i2 (STB10). This second period i2 is set to be longer than the first period i1 (i2 > i1). Note that as long as the detection result by the film thickness sensor 30 is abnormal and the abnormal state continues for the detection result by the particle sensor 200, steps STB2, STB5, STB6, STB8, step S TB9, step B10 are repeated. If it is determined that the detection results from both sensors are normal before the second period i2 is reached after the deposition process is stopped (STB2, STB3), the deposition process is restarted (STB1) after passing through step STB4.

[0065] If it is determined in step STB8 that the number of abnormal detections has reached X, and if it is not determined that the detection results from both sensors are normal before the second period i2 is reached after the deposition process is stopped (STB10), the deposition process ends (STBE).

[0066] As described above, in this embodiment, when it is determined that only the detection result of either the film thickness sensor 30 or the particle sensor 200 is abnormal, the vapor deposition process is stopped for a short period (the first period i1) while the detection operations by each sensor continue. Then, if it is determined that the detection results of both are normal within this short period (the first period i1), the vapor deposition process is resumed. This is for the same reason as described in the above Embodiment 1.

[0067] On the other hand, when it is determined that the detection results of both the film thickness sensor 30 and the particle sensor 200 are abnormal, the vapor deposition process is stopped for a long period (the second period i2). Then, if it is determined that the detection results of both are normal within this long period (the second period i2), the vapor deposition process is resumed. Also, when the frequency of abnormal detections increases, the vapor deposition process ends. This is because in such a case, there is a high possibility that the cause of the abnormality is in the crucible of the evaporation source 100, and even if the vapor deposition process is resumed, the abnormal state is likely to recur.

[0068] As the first period i1, for example, a time between several tens of seconds and several tens of minutes can be set. As the second period i2, for example, a time between several minutes and about one hour can be set.

[0069] In the apparatus configuration of this embodiment, by arranging the particle sensors at appropriate positions, it is possible to detect the vapor deposition state with high accuracy even with a small number of particle sensors (less than the number of evaporation sources). Also, since both the particle sensor and the film thickness sensor are used to control the film formation process, a film formation apparatus with a high yield and high throughput can be achieved.

[0070] (Embodiment 3) Referring to FIGS. 7 and 8, the film forming apparatus according to Example 3 will be described. FIG. 7 is a schematic configuration diagram of the film forming apparatus according to Example 3. FIG. 7(a) is a plan view showing an evaporation source and a particle sensor in the film forming apparatus, and FIG. 7(b) is a schematic cross-sectional view of a main part of the film forming apparatus (corresponding to the V3-V3 cross-section in FIG. 7(a)). FIG. 8 is a control flowchart of the film forming apparatus according to Example 3.

[0071] <Configuration of the Film Forming Apparatus> In the film forming apparatus 1 according to this example, the chamber 10, the vacuum pump 20, the film thickness sensor 30, the substrate S, and the mask M are the same as those described in the above embodiment, so the description thereof will be omitted.

[0072] The evaporation source assemblies 100B1 and B2 according to this example are point source revolver type evaporation source assemblies. For the evaporation source assembly 100B1, the number of evaporation sources 100 (crucibles 110) placed on the turntable 120 is five. For the evaporation source 100B2, the number of evaporation sources 100 placed on the turntable 120 is seven, the same as in Example 1. Since the configuration and operation of the point source revolver type evaporation source have been described in Example 1, the description thereof will be omitted.

[0073] In the film forming apparatus 1 according to this example, two evaporation source assemblies 100B1 and four evaporation source assemblies B2 are provided in the chamber 10. And in each of the evaporation source assemblies 100B1 and B2, a particle sensor 200 is respectively arranged at the center of the turntable 120. That is, there are six particle sensors in the chamber.

[0074] In each of the evaporation source assemblies 100B1 and B2, the arrangement of the detection part 210 of the particle sensor 200 and the positional relationship between each discharge port of the evaporation material in each crucible 110 and the detection part 210 are the same as those described in the above embodiment. In this example, the horizontal distance between the discharge port of the crucible and the detection part 210 is 250 mm, and the detection part 210 is at a position 50 mm lower than the discharge port.

[0075] In the film forming apparatus 1 configured as described above, when it is determined that the detection result of the particle sensor 200 is abnormal, it is possible to specify which evaporation source assembly 100B1, B2 has an abnormal detection result.

[0076] In this embodiment, in addition to the main shutter (omitted in FIG. 7) shown in the above embodiment, source shutters 60 are provided at a total of six locations, one for each of the six evaporation source assemblies 100B1, B2. By opening and closing these shutters, it is possible to switch and control whether the material reaches the substrate S or not. That is, by opening and closing the shutter, it is possible to switch between executing and not executing the vapor deposition process on the substrate.

[0077] In this embodiment, one film thickness sensor is provided for each evaporation source assembly. That is, the chamber has six film thickness sensors (omitted in FIG. 7).

[0078] In this embodiment, the crucible of one evaporation source assembly 100B1 (the right side in FIG. 7) is filled with Mg as the material, and the other evaporation source assembly 100B1 (the left side) is filled with Yb. Also, four evaporation source assemblies 100B2 are filled with Ag. With such a device configuration, it is possible to form a mixed film or a laminated film of Ag, Mg, and Yb.

[0079] <Control Procedure of Evaporation Source> In the film forming apparatus 1, the evaporation source 100 is heated, and after the film forming rate detected by each film thickness sensor 30 stabilizes at a predetermined value, the film forming process is started (STCS). According to an instruction from the control device 40, the substrate is loaded, the positioning of the substrate S and the mask M is performed, the substrate is rotated, and the evaporation process is executed by opening the shutter. At this time, in each of the evaporation source assemblies 100B1 and B100B2, the evaporation process by the evaporation source 100 arranged at the position P1 is executed (STC1). After a film of a predetermined thickness is formed on the substrate, the substrate is unloaded and the next substrate is loaded, and the film forming is successively executed by exchanging the substrates one after another.

[0080] During the execution of the evaporation process, detection signals from all the film thickness sensors 30 and detection signals from all the particle sensors 200 are continuously sent to the control device 40. In the control device 40, it is determined whether the detection results by all the film thickness sensors 30 are abnormal (STC2), and whether the detection results of all the particle sensors 200 are abnormal (STC3). When the control device 40 determines that both are normal (not abnormal), it determines whether the integrated film thickness obtained by the film thickness sensor 30 has reached t (STC4). The integrated film thickness t is as described in Example 1. As long as the detection results by each sensor are all normal and the integrated film thickness has not reached t, the evaporation process continues to be executed.

[0081] In step STC4, when it is determined that the integrated film thickness has reached t, the control device 40 determines whether the number of cell changes has reached n (STC5). Note that n = 4 in the case of the evaporation source assembly 100B1, and n = 6 in the case of the evaporation source 100B2. If the number of cell changes has not reached n, a cell change is performed (STC6), the crucible 110 waiting at position P2 moves to position P1, and the vapor deposition process continues (STC1). In step STC5, when it is determined that the number of cell changes has reached n, the vapor deposition process ends (STCE). After that, after stopping the heating of the evaporation source 100 and cooling down, the inside of the chamber 10 is returned to atmospheric pressure, and various maintenance operations such as cleaning and replenishing the evaporation material m are performed on the crucibles 110 of all the evaporation sources 100.

[0082] Then, in step STC2, when it is determined that the detection result by at least one film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is normal (not abnormal) (STC7), the control device 40 closes the main shutter and stops the vapor deposition process while continuing the detection operation by each sensor (STC8). After that, the control device 40 determines whether the elapsed time since the vapor deposition process was stopped has reached a predetermined third period i3 (STC9). Note that as long as the detection result by the film thickness sensor 30 is abnormal and the normal state of the detection result by the particle sensor 200 continues, steps STC2, STC7, STC8, and STC9 are repeated. If it is determined that the detection results from both sensors are normal before the third period i3 is reached after the vapor deposition process is stopped (STC2, STC3), the main shutter is opened after passing through step STC4, and the vapor deposition process is restarted (STC1).

[0083] Before reaching the third period i3 after the evaporation process is stopped, if it is not determined that the detection results from both sensors are normal, the control device 40 determines whether the cell change count has reached n in the evaporation source assembly where the film thickness sensor 30 is determined to be abnormal (STC5). Depending on this determination, as described above, a cell change is performed (STC6), and the evaporation process is continued or the evaporation process ends (STCE).

[0084] Also, in step STC2, if it is determined that the detection results by all the film thickness sensors 30 are normal (not abnormal) and the detection results by one or more particle sensors 200 are determined to be abnormal (STC3), the control device 40 stops the evaporation process by closing the main shutter while continuing the detection operation by each sensor (STC8). The subsequent procedure is the same as above. However, it is different from the above in that steps STC2, STC3, STC8, and STC9 are repeated as long as the detection results by all the film thickness sensors 30 are normal and the abnormal state continues for the detection results by one or more particle sensors 200.

[0085] Before reaching the third period i3 after the evaporation process is stopped, if it is not determined that the detection results from both sensors are normal, the control device 40 determines whether the cell change count has reached n in the evaporation source assembly where the particle sensor is determined to be abnormal (STC5). Depending on this determination, as described above, a cell change is performed (STC6), and the evaporation process is continued or the evaporation process ends (STCE).

[0086] And in step STC2, if it is determined that the detection result by at least one film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is also determined to be abnormal (STC7), the control device 40 uses a single particle sensor 20 Determine whether the detection result by 0 is abnormal or the detection results by a plurality of particle sensors 200 are abnormal (STC10). When it is determined that the detection result by a single particle sensor 200 is abnormal, the control device 40 determines whether the number of cell change times has reached n for the evaporation source assemblies 100B1 and B2 determined to be abnormal (STC5). According to this determination, as described above, a cell change is performed (STC6), and the vapor deposition process is continued or the vapor deposition process ends (STCE).

[0087] In step STC10, when it is determined that the detection results by a plurality of particle sensors 200 are abnormal, the control device 40 stops the vapor deposition process by closing the source shutter and the main shutter while continuing the detection operation by each sensor (STC11). Then, the control device 40 determines whether the elapsed time since the vapor deposition process was stopped has reached a predetermined fourth period i4 (STC12). This fourth period i4 is set to a period longer than the third period i3 (i4>i3). Note that as long as the detection result by at least one film thickness sensor 30 is abnormal and the abnormal state continues for the detection results by a plurality of particle sensors 200, steps STC2, STC7, STC10, STC11, and STC12 are repeated. Inside this repetition loop When making an abnormality determination of the particle sensor in STC7, only the source shutter corresponding to the evaporation source for which the determination is made is opened, sensor information is detected, and the determination is made.

[0088] Before the fourth period i4 is reached after the vapor deposition process is stopped, if it is determined that the detection results from all sensors are normal (STC2, STC3), the source shutter and the main shutter are opened after passing through step STC4, and the vapor deposition process is restarted (STC1).

[0089] Before the fourth period i4 is reached after the vapor deposition process is stopped, if it is not determined that the detection results from all sensors are normal (STC12), the vapor deposition process ends (STCE).

[0090] As the third period i3, for example, a time between several tens of seconds and several tens of minutes can be set. As the fourth period i4, for example, a time of about several minutes to one hour can be set.

[0091] As described above, in this embodiment, when it is determined that the detection results of all the film thickness sensors 30 are normal and the detection results by one or more particle sensors 200 are abnormal, and when the detection result of at least one film thickness sensor 30 is abnormal and the detection results by all the particle sensors 200 are normal, the vapor deposition process is stopped for a short period (the third period i3) while the detection operations by each sensor continue. And when it is determined that all the detection results are normal within this short period (the third period i3), the vapor deposition process is restarted. The reason is as described in the above Embodiment 1.

[0092] And when it is determined that the detection results of at least one film thickness sensor 30 and a plurality of particle sensors 200 are abnormal, the vapor deposition process is stopped for a long period (the fourth period). And when it is determined that all the detection results are normal within this long period (the fourth period), the vapor deposition process is restarted. Otherwise, the vapor deposition process ends.

[0093] Furthermore, when it is determined that the detection results of at least one film thickness sensor 30 and a single particle sensor 200 are abnormal, control is performed to end the vapor deposition process by the crucible 110 (the crucible 110 arranged at the position P1) that was performing the vapor deposition process in the evaporation source assemblies 100B1, B2 determined to be abnormal. The reason is as described in the above Embodiment 1. And even in such a case, since cell change is performed and the vapor deposition process continues it is possible to maintain the productivity as a film forming apparatus.

[0094] In the device configuration equipped with a large number of evaporation sources in this embodiment, by arranging the particle sensor at the center of the evaporation source assembly, miniaturization of the device is achieved. Also, despite using a large number of evaporation sources, the deposition state can be detected with high accuracy using a small number of particle sensors (less than the number of evaporation sources). Further, since both the particle sensor and the film thickness sensor are used to control the film formation process, a film forming apparatus with a high yield and high throughput can be obtained. In particular, during continuous production, a film forming apparatus with a short downtime of the device can be obtained.

[0095] (Example 4) Referring to FIGS. 9 and 10, the film forming apparatus according to Example 4 will be described. FIG. 9 is a schematic configuration diagram of the film forming apparatus according to Example 4. FIG. 9(a) is a plan view showing the evaporation source and the particle sensor in the film forming apparatus, FIG. 9(b) is a front view (a view seen in the V3 direction in FIG. 9(a)) showing the evaporation source and the particle sensor in the film forming apparatus, and FIG. 9(c) is a side view (a view seen in the V4 direction in FIG. 9(a)) showing the evaporation source and the particle sensor in the film forming apparatus. Also, FIG. 10 is a control flowchart of the film forming apparatus according to Example 4.

[0096] <Configuration of the Film Forming Apparatus> In the film forming apparatus 1 according to this embodiment, the chamber 10, the vacuum pump 20, the film thickness sensor 30, the substrate S, and the mask M are the same as those described in the above embodiment, and thus the description thereof is omitted.

[0097] The evaporation source 100C according to this embodiment is a linear evaporation source. Inside the case 150 of the evaporation source 100C, a crucible 110 is provided. In the illustrated example, a case where one crucible 110 is provided is shown, but a configuration in which a plurality of crucibles are provided in one case can also be adopted. And, at the upper part of the case 150, a plurality of nozzles 151 for discharging the substance evaporated or sublimated in the crucible 110 are provided. In the case of this embodiment, the discharge port of the evaporation material in the crucible corresponds to the tip of the nozzle 151. Also, a heating device or a reflector can be provided on the case 150 itself. Further, in the case of this embodiment, the case 150 itself can be made to also have the function as the cap 112 described in the above embodiment.

[0098] And, in this embodiment, particle sensors 200 are arranged at two locations. However, regarding the particle sensors 200, three or more can also be provided according to the number of nozzles 151 and the like. The arrangement of the detection portions 210 of the particle sensors 200 is as described in the above embodiment. Also, the positional relationship between the tip of the nozzle 151 (the discharge port of the evaporation material in the crucible 110) and the detection portion 210 arranged at the position closest to this nozzle 151 is as described in the above embodiment. In this embodiment, the horizontal distance between the discharge port of the crucible and the detection portion 210 (the horizontal distance regarding the discharge port of the nozzle 151 closest to the detection portion 210 among the plurality of nozzles 151) is 300 mm, and the detection portion 210 is at a position 200 mm lower than the discharge port.

[0099] In this embodiment, one film thickness sensor 30 is arranged above the end of the linear evaporation source. By scanning and moving the evaporation source 100C, the particle sensors 200, and the film thickness sensor 30 together in a direction parallel to the film formation surface of the substrate, film formation is performed over the entire surface of the substrate. If necessary, the evaporation source can make a plurality of reciprocating movements in the horizontal direction. Also, when film formation on the substrate is not performed, it can move to a position on the substrate where no evaporation deposit is formed (retreat position).

[0100] More specifically, the drive device 70 is configured such that the evaporation source 100C, the particle sensor 200 and the film thickness sensor 30 move integrally back and forth. The drive device 70 includes a pair of rails 71, a pedestal 72 configured to be reciprocally movable along the pair of rails 71, a drive source 73 such as a motor, and a ball screw 74 rotated by the drive source 73. The pedestal 72 is provided with an insertion hole 72a through which the ball screw 74 is inserted. A nut is formed on the inner peripheral surface of the insertion hole 72a, and a plurality of balls configured to circulate infinitely are provided between the ball screw 74 and the nut. With the above configuration, when the ball screw 74 rotates forward and backward by the drive source 73, the pedestal 72 reciprocally moves along the pair of rails 71. The evaporation source 100C, the particle sensor 200, and the film thickness sensor 30 are fixed to the pedestal 72. In this embodiment, the configuration for reciprocally moving the evaporation source 100C and the like by a ball screw mechanism is shown. However, for the configuration for reciprocally moving the evaporation source 100C and the like, various known techniques such as a rack and pinion method can be adopted.

[0101] In the case of this embodiment, since the evaporation source 100C can be moved to a position (retracted position) where the vapor deposition material emitted from the evaporation source 100C does not reach the substrate S, it is not necessary to provide the various shutters shown in the above embodiment.

[0102] <Control Procedure of Evaporation Source> In the film forming apparatus 1, the evaporation source 100C is heated at the retracted position, and after the film forming rate detected by the film thickness sensor 30 stabilizes at a predetermined value, the film forming process is started (STAS). After the loading of the substrate and the positioning of the substrate S and the mask M are performed according to an instruction from the control device 40, the linear evaporation source is moved to perform the vapor deposition process on the substrate (STC1). During the movement, the film thickness sensor 30 and the particle sensor 200 also move together with the linear evaporation source. During the execution of the vapor deposition process, the detection signal from the film thickness sensor 30 and the detection signals from all the particle sensors 200 are continuously sent to the control device 40. In the control device 40, it is determined whether the detection result by the film thickness sensor 30 is abnormal (STD2), and whether the detection results by all the particle sensors 200 are abnormal (STD3). When the control device 40 determines that both are normal (not abnormal), it determines whether the integrated film thickness obtained by the film thickness sensor 30 has reached t (STD4). The integrated film thickness t is as described in Example 1. As long as the detection results by each sensor are all normal and the integrated film thickness has not reached t, the vapor deposition process continues to be executed.

[0103] In step STD4, when it is determined that the integrated film thickness has reached t, the vapor deposition process ends (STDE). Thereafter, after stopping the heating of the evaporation source 100C and cooling down, the inside of the chamber 10 is returned to atmospheric pressure, and various maintenance operations are performed, such as replenishing the evaporation material m to the crucible 110.

[0104] And in step STD2, when it is determined that the detection result by the film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is normal (not abnormal) (STD5), the control device 40 moves the evaporation source to the standby position while continuing the detection operation by each sensor, and stops the vapor deposition process on the substrate (STD7). Then, the control device 40 determines whether the elapsed time since the vapor deposition process was stopped has reached a third period i3 that is predetermined (STD8). Note that steps STD2, STD5, STD7, and STD8 are repeated as long as the detection result by the film thickness sensor 30 is abnormal and the normal state continues for the detection result by the particle sensor 200. If it is determined that the detection results from both sensors are normal before the third period i3 is reached after the vapor deposition process is stopped (STD2, STD3), the vapor deposition process is restarted (STD1) after passing through step STD4.

[0105] If it is not determined that the detection results from both sensors are normal before the third period i3 is reached after the vapor deposition process is stopped, the vapor deposition process ends (STDE).

[0106] Also, in step STD2, when it is determined that the detection result by the film thickness sensor 30 is normal (not abnormal) and the detection result by one or more particle sensors 200 is abnormal (STD3), the control device 40 moves the evaporation source to the standby position while continuing the detection operation by each sensor, and stops the vapor deposition process on the substrate (STD7). The subsequent procedure is the same as above. However, it is different from the above in that steps STD2, STD3, STD7, and STD8 are repeated as long as the detection result by the film thickness sensor 30 is normal and the abnormal state continues for the detection result by one or more particle sensors 200.

[0107] Then, in step STD2, when it is determined that the detection result by the film thickness sensor 30 is abnormal and it is also determined that the detection result by the particle sensor 200 is abnormal (STD5), the control device 40 determines whether the detection result by a single particle sensor 200 is abnormal or the detection results by a plurality of particle sensors 200 are abnormal (STD6).

[0108] When it is determined that the detection result by a single particle sensor 200 is abnormal, the control device 40 moves the evaporation source to the standby position while continuing the detection operation by each sensor, and stops the vapor deposition process on the substrate (STD7). The subsequent procedure is the same as above. However, as long as the detection result by the film thickness sensor 30 is abnormal and the abnormal state continues for the detection result by a single particle sensor 200, steps STD2, STD5, STD6, STD7, and STD8 are repeated, which is different from the above description. is different.

[0109] In step STD6, when it is determined that the detection results by a plurality of particle sensors 200 are abnormal, the control device 40 moves the evaporation source to the standby position while continuing the detection operation by each sensor, and stops the vapor deposition process on the substrate (STD9). Then, the control device 40 determines whether the elapsed time since the vapor deposition process was stopped has reached a fourth period i4 that is preset (STD10). This fourth period i4 is set to a period longer than the third period i3 (i4 > i3). Note that as long as the detection result by the film thickness sensor 30 is abnormal and the abnormal state continues for the detection results by a plurality of particle sensors 200, steps STD2, STD5, STD6, STD9, and S TD10 are repeated. Before the fourth period i4 is reached after the vapor deposition process is stopped, when it is determined that the detection results from all sensors are normal (STD2, STD3), after passing through step STD4, the vapor deposition process is restarted (STD1).

[0110] If, before reaching the fourth period i4 after the evaporation process is stopped, it is not determined that the detection results from all sensors are normal (STD10), the evaporation process ends (STDE).

[0111] As the third period i3, for example, a time between several tens of seconds and several tens of minutes can be set. As the fourth period i4, for example, a time of about several minutes to one hour can be set.

[0112] As described above, in this embodiment, when it is determined that the detection result of the film thickness sensor 30 is normal and the detection results by one or more particle sensors 200 are abnormal, and when the detection result of the film thickness sensor 30 is abnormal and the detection result by the particle sensor 200 is normal or the detection result by a single particle sensor 200 is abnormal, the evaporation process is stopped for a short period (the third period i3) while the detection operations by each sensor continue. And if it is determined that all detection results are normal within this short period (the third period i3), the evaporation process is restarted. The reason is as described in the above Example 1.

[0113] On the other hand, when it is determined that the detection results of the film thickness sensor 30 and the plurality of particle sensors 200 are abnormal, the evaporation process is stopped for a long period (the fourth period). And if it is determined that all detection results are normal within this long period (the fourth period), the evaporation process is restarted. Otherwise, the evaporation process ends.

[0114] In the device configuration of this embodiment, by arranging the particle sensors at appropriate positions and having a configuration in which the evaporation source and the film thickness sensor are scanned and moved together, the evaporation state can be detected with high accuracy. Also, since both the particle sensor and the film thickness sensor are used to control the film formation process, a film formation device with a high yield and high throughput can be achieved.

[0115] (Examples of Other Controls) The above described a typical example of the control of the evaporation source. As other examples, the method of controlling the evaporation source is appropriately changed based on the detection results of the particle sensor and the film thickness sensor. For example, if an abnormality is detected by either one of the particle sensor and the film thickness sensor, the vapor deposition process by the evaporation source may be terminated. Alternatively, when one of the particle sensor and the film thickness sensor detects an abnormality and the other does not, the vapor deposition process by the evaporation source may be continued. That is, when both the particle sensor and the film thickness sensor detect an abnormality, the vapor deposition process by the evaporation source is stopped or terminated. Regarding the restart after stopping, the control as in the above-described examples can be applied.

[0116] (Example 5) <Method for manufacturing an electronic device> Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to Examples 3 and 4 will be described. Hereinafter, the configuration of an organic EL display device will be shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0117] First, the organic EL display device to be manufactured will be described. FIG. 11(a) is an overall view of the organic EL display device 800, and FIG. 11(b) shows a cross-sectional structure of one pixel.

[0118] As shown in FIG. 11(a), in the display area 801 of the organic EL display device 800, a plurality of pixels 802 each including a light emitting element are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to the minimum unit that enables display of a desired color in the display area 801. In the case of the organic EL display device according to this example, the pixel 802 is constituted by a combination of a first light emitting element 802R, a second light emitting element 802G, and a third light emitting element 802B that exhibit different emissions. The pixel 802 is often constituted by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may also be constituted by a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color or more.

[0119] Figure 11(b) is a partial cross-sectional schematic view taken along line S-S of Figure 11(a). Pixel 802 is composed of a plurality of light-emitting elements. Each light-emitting element has, on a substrate 803, a first electrode (anode) 804, a hole transport layer 805, one of light-emitting layers 806R, 806G, 806B, an electron transport layer 807, and a second electrode (cathode) 808. Among these, the hole transport layer 805, the light-emitting layers 806R, 806G, 806B, and the electron transport layer 807 correspond to organic layers. Also, in this embodiment, the light-emitting layer 806R is an organic EL layer that emits red light, the light-emitting layer 806G is an organic EL layer that emits green light, and the light-emitting layer 806B is an organic EL layer that emits blue light. The light-emitting layers 806R, 806G, 806B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively.

[0120] Also, the first electrode 804 is formed separately for each light-emitting element. The hole transport layer 805, the electron transport layer 807, and the second electrode 808 may be formed commonly for a plurality of light-emitting elements 802R, 802G, 802B, or may be formed for each light-emitting element. Note that in order to prevent the first electrode 804 and the second electrode 808 from being short-circuited by foreign matter, an insulating layer 809 is provided between the first electrodes 804. Further, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 810 for protecting the organic EL element from moisture and oxygen is provided.

[0121] In Figure 11(a), the hole transport layer 805 and the electron transport layer 807 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer. Also, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 804 to the hole transport layer 805 can be formed between the first electrode 804 and the hole transport layer 805. Similarly, an electron injection layer can also be formed between the second electrode 808 and the electron transport layer 807.

[0122] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0123] First, prepare a circuit (not shown) for driving the organic EL display device and a substrate 803 on which a first electrode 804 is formed.

[0124] Acrylic resin is formed on the substrate 803 on which the first electrode 804 is formed by spin coating, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the first electrode 804 is formed to form an insulating layer 809. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0125] The substrate 803 on which the insulating layer 809 is patterned is carried into a first organic material film-forming apparatus, the substrate is held by a substrate support table and an electrostatic chuck, and a hole transport layer 805 is formed as a common layer on the first electrode 804 in the display region. The hole transport layer 805 is formed by vacuum evaporation. Actually, since the hole transport layer 805 is formed in a size larger than that of the display region 801, a high-definition mask is not required.

[0126] Next, the substrate 803 on which the hole transport layer 805 is formed is carried into a second organic material film-forming apparatus and held by a substrate support table and an electrostatic chuck. Alignment between the substrate and the mask is performed, the substrate is placed on the mask, and an emission layer 806R that emits red light is formed in the portion where the element that emits red light on the substrate 803 is arranged.

[0127] Similar to the formation of the emission layer 806R, an emission layer 806G that emits green light is formed by a third organic material film-forming apparatus, and further, an emission layer 806B that emits blue light is formed by a fourth organic material film-forming apparatus. After the formation of the emission layers 806R, 806G, and 806B is completed, an electron transport layer 807 is formed over the entire display region 801 by a fifth film-forming apparatus. The electron transport layer 807 is formed as a common layer for the three-color emission layers 806R, 806G, and 806B.

[0128] The first to fourth organic material film-forming apparatuses apply the film-forming apparatuses and film-forming methods having the configurations described in Example 4.

[0129] The substrate formed up to the electron transport layer 807 is moved to a metal evaporation material film forming apparatus to form the second electrode 808. The metal evaporation material film forming apparatus applies the film forming apparatus and the film forming method having the configuration described in Example 3.

[0130] Thereafter, it is moved to a plasma CVD apparatus to form the protective layer 810, and the organic EL display device 80 0 is completed.

[0131] From when the substrate 803 with the insulating layer 809 patterned is carried into the film forming apparatus until the film formation of the protective layer 810 is completed, if it is exposed to an atmosphere containing moisture or oxygen, the light emitting layer made of the organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the loading and unloading of the substrate between the film forming apparatuses are performed under a vacuum atmosphere or an inert gas atmosphere.

[0132] In the apparatus configuration of this embodiment, by arranging the particle sensor at an appropriate position, the evaporation state can be detected with high accuracy. Also, since both the particle sensor and the crystal oscillator are used to control the film forming process, a film forming apparatus with a high yield and a high production rate can be obtained. In particular, during the continuous production of the organic EL display device, a manufacturing apparatus with a short device stop time can be obtained.

Explanation of Reference Numerals

[0133] 1... Film forming apparatus 10... Chamber 20... Vacuum pump 30... Film thickness sensor 40... Control device 100A, 100B1, B2... Evaporation source assembly 100, 100C... Evaporation source 110... Crucible 111... Container 112... Cap 112a... Through hole 113... Heating device 115... Reflector 120... Rotating table 130... Drive source 140... Cover 141... Opening 150... Case 151... Nozzle 200... Particle sensor 210... Detection part 220... Reflector

Claims

1. An evaporation source provided in a chamber for releasing a vapor deposition material, a first detection means for detecting at least one of the thickness of the film of the vapor deposition material formed on a substrate by vapor deposition and the amount of release of the vapor deposition material from the evaporation source in the vapor deposition process, a second detection means for detecting particles in the chamber, a film forming apparatus comprising a control means for controlling the evaporation source based on the detection result of the first detection means and the detection result of the second detection means, when it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on at least one of the detection result of the first detection means and the detection result of the second detection means, the control means stops the vapor deposition process by the evaporation source while continuing the detection operations by the first detection means and the second detection means, when it is determined that the state of the evaporation source is normal based on the detection result of the first detection means and it is determined that the state of the evaporation source is normal based on the detection result of the second detection means before a first period elapses from the stop of the vapor deposition process, the control means resumes the vapor deposition process by the evaporation source. A film forming apparatus characterized by this.

2. If it is determined that the state of the evaporation source is abnormal based on the detection result of at least one of the first detection means and the second detection means until the first period elapses from the stop of the vapor deposition process, the control means ends the vapor deposition process by the evaporation source. The film forming apparatus according to Claim 1, characterized by this.

3. When it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on the detection result of the first detection means and it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on the detection result of the second detection means, the control means ends the vapor deposition process by the evaporation source. The film forming apparatus according to Claim 1 or 2, characterized by this.

4. An evaporation source provided in a chamber for releasing a vapor deposition material, a first detection means for detecting at least one of the thickness of the film of the vapor deposition material formed on a substrate by vapor deposition and the amount of release of the vapor deposition material from the evaporation source in the vapor deposition process, a second detection means for detecting particles in the chamber, A film forming apparatus comprising: control means for controlling the evaporation source based on the detection result of the first detection means and the detection result of the second detection means. When it is determined based on the detection result of the first detection means that the state of the evaporation source performing the vapor deposition process is abnormal, and it is determined based on the detection result of the second detection means that the state of the evaporation source performing the vapor deposition process is abnormal, the control means stops the vapor deposition process by the evaporation source while continuing the detection operations by the first detection means and the second detection means. Before a second period elapses from the stop of the vapor deposition process, when it is determined based on the detection result of the first detection means that the state of the evaporation source is normal, and it is determined based on the detection result of the second detection means that the state of the evaporation source is normal, the control means resumes the vapor deposition process by the evaporation source. A film forming apparatus characterized by this.

5. If it is determined that the state of the evaporation source is abnormal based on the detection result of at least one of the first detection means and the second detection means until the second period elapses from the stop of the vapor deposition process, the control means ends the vapor deposition process by the evaporation source. The film forming apparatus according to claim 4, characterized by this.

6. Even when it is determined based on the detection result of one of the first detection means and the second detection means that the state of the evaporation source is normal during the vapor deposition process by the evaporation source, and it is determined based on the detection result of the other of the first detection means and the second detection means that the state of the evaporation source is abnormal, the vapor deposition process by the evaporation source is continued. The film forming apparatus according to claim 4 or 5, characterized by this.

7. An evaporation source provided in the chamber for releasing a vapor deposition material. First detection means for detecting at least one of the thickness of the film of the vapor deposition material formed on the substrate by the vapor deposition process and the release amount of the vapor deposition material from the evaporation source in the vapor deposition process. Second detection means for detecting particles in the chamber. A film forming apparatus comprising: control means for controlling the evaporation source based on the detection result of the first detection means and the detection result of the second detection means. While the vapor deposition process is being performed by the evaporation source, even if the state of the evaporation source is determined to be normal based on the detection result of one of the first detection means and the second detection means, and the state of the evaporation source is determined to be abnormal based on the detection result of the other of the first detection means and the second detection means, the vapor deposition process by the evaporation source is continued. A film forming apparatus characterized by this.

8. An evaporation source provided in the chamber for releasing a vapor deposition material, First detection means for detecting at least one of the thickness of the film of the vapor deposition material formed on the substrate by the vapor deposition process and the amount of the vapor deposition material released from the evaporation source in the vapor deposition process, Second detection means for detecting particles in the chamber, A film forming apparatus comprising control means for controlling the evaporation source based on the detection result of the first detection means and the detection result of the second detection means, A plurality of the second detection means are provided in the chamber, Based on the detection result of the first detection means, the state of the evaporation source performing the vapor deposition process is determined to be normal, and at least one detection result of the plurality of second detection means When it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on the above, and when it is determined that the state of the evaporation source performing the vapor deposition process is normal based on the detection results of all the second detection means, and the state of the evaporation source performing the vapor deposition process is determined to be abnormal based on the detection result of the first detection means, the control means stops the vapor deposition process by the evaporation source while continuing the detection operations by the first detection means and all the second detection means. Before a third period elapses from the stop of the vapor deposition process, when it is determined that the state of the evaporation source is normal based on the detection result of the first detection means and it is determined that the state of the evaporation source is normal based on the detection results of all the second detection means, the control means resumes the vapor deposition process by the evaporation source. A film forming apparatus characterized by this.

9. An evaporation source provided in the chamber for releasing a vapor deposition material, First detection means for detecting at least one of the thickness of the film of the vapor deposition material formed on the substrate by the vapor deposition process and the amount of the vapor deposition material released from the evaporation source in the vapor deposition process, second detection means for detecting particles in the chamber; a film forming apparatus comprising: control means for controlling the evaporation source based on a detection result of the first detection means and a detection result of the second detection means; a plurality of the second detection means are provided in the chamber; when it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on the detection result of the first detection means, and when it is determined that the state of the evaporation source performing the vapor deposition process is abnormal based on detection results of two or more of the plurality of second detection means, the control means stops the vapor deposition process by the evaporation source while continuing the detection operations by the first detection means and all of the second detection means; before a fourth period elapses from the stop of the vapor deposition process, when it is determined that the state of the evaporation source is normal based on the detection result of the first detection means and when it is determined that the state of the evaporation source is normal based on the detection results of all of the second detection means, the film forming apparatus is characterized in that the vapor deposition process by the evaporation source is restarted.

10. If it is determined that the state of the evaporation source is abnormal based on either the detection result of the first detection means or the detection results of all of the second detection means until the fourth period elapses from the stop of the vapor deposition process, the film forming apparatus according to claim 9, characterized in that the vapor deposition process by the evaporation source is terminated.

11. further comprising a second evaporation source different from the evaporation source; the film forming apparatus according to any one of claims 1 to 10, characterized in that the control means starts the vapor deposition process by the second evaporation source when the vapor deposition process by the evaporation source is terminated.

12. further comprising a shutter for shielding the vapor deposition material; the film forming apparatus according to any one of claims 1 to 11, characterized in that the control means stops the vapor deposition process by the evaporation source by covering the discharge port of the evaporation source with the shutter while continuing the discharge of the vapor deposition material from the evaporation source.

13. when the detection result of the first detection means is included in a predetermined range, the state of the evaporation source is determined to be normal based on the detection result of the first detection means, When the detection result of the first detection means is not included in the predetermined range, the state of the evaporation source is determined to be abnormal based on the detection result of the first detection means. The detection result of the second detection means indicates the number of particles detected per unit time. When the detection result of the second detection means does not exceed a predetermined threshold value, the state of the evaporation source is determined to be normal based on the detection result of the second detection means. The film forming apparatus according to any one of claims 1 to 12, wherein when the detection result of the second detection means exceeds the predetermined threshold value, the state of the evaporation source is determined to be abnormal based on the detection result of the second detection means.

14. The film forming apparatus according to any one of claims 1 to 13, wherein the second detection means is arranged such that a detection range of the second detection means includes a region where the vapor deposition material discharged by splash from a crucible provided in the evaporation source scatters.

15. A plurality of the evaporation sources, A turntable that changes the positions of the plurality of evaporation sources by rotating, The film forming apparatus according to any one of claims 1 to 14, comprising:

16. The film forming apparatus according to claim 15, wherein the second detection means is arranged at the center of the turntable.

17. The film forming apparatus according to claim 15 or 16, wherein the control means changes the positions of the plurality of evaporation sources by rotating the turntable based on the detection result of the first detection means and the detection result of the second detection means.

18. The film forming apparatus according to any one of claims 15 to 17, wherein when it is determined that one state of the plurality of evaporation sources performing the vapor deposition process is abnormal, the control means rotates the turntable to switch the evaporation source performing the vapor deposition process.

19. The film forming apparatus according to any one of claims 1 to 18, wherein at least a part of a detection portion of the second detection means is arranged vertically below an outlet of the vapor deposition material in the evaporation source.

20. The film forming apparatus according to any one of claims 1 to 19, wherein a horizontal distance between an outlet of the vapor deposition material in the evaporation source and a detection portion of the second detection means is greater than 0 cm and equal to or less than 70 cm.

21. The film forming apparatus according to any one of claims 1 to 19, characterized in that a horizontal distance between a discharge port of a vapor deposition material in a crucible provided in the evaporation source and a detection portion in the second detection means is greater than 0 cm and 50 cm or less.

22. The film forming apparatus according to any one of claims 1 to 21, characterized in that a reflector for blocking heat from the evaporation source is disposed between the second detection means and the evaporation source.

23. The film forming apparatus according to any one of claims 1 to 22, characterized in that the vapor deposition material is a metal.

24. A method for manufacturing an electronic device using the film forming apparatus according to any one of claims 1 to 23, comprising: a step of forming a film on a substrate using the evaporation source; a step of controlling an operation of the evaporation source based on a detection result of the first detection means and a detection result of the second detection means. A method for manufacturing an electronic device, characterized by the above.

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