Multilayer electronic component

Abstract

To provide a highly reliable compact, high-capacity laminated electronic component that improves the reliability of an internal electrode, high temperature load reliability, and moisture resistance reliability.SOLUTION: A laminated electronic component includes a main body including a dielectric layer and internal electrodes stacked alternately with the dielectric layer sandwiched between them, and an external electrode placed on the main body and connected to the internal electrode, and the internal electrode contains Cu and Ni, and the internal electrode has a Cu / Ni (coefficient of variation) CV value (Coefficient of Variation) of 25.0% or less in a depth region of 5 nm from the interface with the dielectric layer.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one of multilayer electronic components, is a chip-shaped capacitor mounted on printed circuit boards of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. Recently, as components of electronic devices are miniaturized, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] In order to miniaturize and increase the capacitance of multilayer ceramic capacitors, a technology capable of forming the internal electrodes and dielectric layers with a reduced thickness is required.

[0005] However, with the thinning of the internal electrodes and dielectric layers, there are problems such as deterioration of high-temperature load reliability and moisture resistance reliability. Therefore, a solution that can ensure excellent high-temperature load reliability, moisture resistance reliability, etc. while the internal electrodes and dielectric layers are thinned is required.

Summary of the Invention

Problems to be Solved by the Invention

[0006] One of several objects of the present invention is to improve the reliability of internal electrodes.

[0007] One of several objects of the present invention is to improve the high-temperature load reliability of internal electrodes.

[0008] One of several objects of the present invention is to improve the moisture resistance reliability of internal electrodes.

[0009] One of several objects of the present invention is to provide a highly reliable small-sized and high-capacity multilayer electronic component.

[0010] However, the objects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining specific embodiments of the present invention.

Means for Solving the Problems

[0011] A multilayer electronic component according to an embodiment of the present invention includes a dielectric layer, a main body including internal electrodes alternately laminated with the dielectric layer interposed therebetween, and external electrodes disposed on the main body and connected to the internal electrodes. The internal electrodes have a coefficient of variation (CV value) of Cu / Ni (weight ratio) in a depth region of 5 nm from the interface with the dielectric layer of 25.0% or less.

Effects of the Invention

[0012] One of several effects of the present invention is that the reliability of the multilayer electronic component can be improved.

[0013] However, the various and significant advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining specific embodiments of the present invention.

Brief Description of the Drawings

[0014]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

[0015] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, elements such as the shape and size in the drawings may be enlarged or reduced (or emphasized or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0016] In addition, in the drawings, parts not related to the explanation are omitted for clearly explaining the present invention, and the thickness is enlarged to clearly show a plurality of layers and regions. Components having the same functions within the scope of the same concept can be described using the same reference numerals. Furthermore, throughout the specification, stating that a certain component "includes" means that, unless otherwise stated to the contrary, it does not exclude other components but can further include other components.

[0017] In the drawings, the X direction can be defined as the second direction, the L direction or the length direction, the Y direction as the third direction, the W direction or the width direction, and the Z direction as the first direction, the lamination direction, the T direction or the thickness direction.

[0018] [Multilayer Electronic Component] FIG. 1 schematically shows a perspective view of a multilayer electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a cross-sectional view taken along line I-I' of FIG. 1, FIG. 3 schematically shows a cross-sectional view taken along line II-II' of FIG. 1, FIG. 4 is an exploded perspective view schematically showing a main body in which a dielectric layer and internal electrodes according to an embodiment of the present invention are laminated, and FIG. 5 is a drawing showing an enlarged view of region K in FIG. 2.

[0019] Hereinafter, with reference to FIGS. 1 to 5, a multilayer electronic component according to an embodiment of the present invention will be described in detail.

[0020] A multilayer electronic component 100 according to an embodiment of the present invention includes a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer, and external electrodes 131 and 132 arranged on the main body and connected to the internal electrodes. The internal electrodes have a coefficient of variation (CV value) of Cu / Ni (weight ratio) in a depth region of 5 nm from the interface with the dielectric layer of 25.0% or less.

[0021] In the main body 110, the dielectric layer 111 and the internal electrodes 121 and 122 are alternately laminated.

[0022] There is no particular limitation on the specific shape of the main body 110. As shown in the drawings, the main body 110 can have a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 does not have a hexahedron shape with perfect straight lines, but can have a substantially hexahedron shape.

[0023] The main body 110 can have a first surface 1 and a second surface 2 facing each other in the thickness direction (Z direction), a third surface 3 and a fourth surface 4 facing each other in the width direction (Y direction) and connected to the first surface 1 and the second surface 2, and a fifth surface 5 and a sixth surface 6 facing each other in the length direction (X direction) and connected to the first surface 1 and the second surface 2 and also connected to the third surface 3 and the fourth surface 4.

[0024] The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to the extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0025] According to one embodiment of the present invention, the raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, a strontium titanate-based material, or the like can be used. The barium titanate-based material can include BaTiO3-based ceramic powder. As an example, the ceramic powder can be BaTiO3, (Ba 1-x Ca x )TiO3, Ba(Ti 1-y Ca y )O3, (Ba 1-x Ca x )(Ti 1-y Zr y )O3, or Ba(Ti 1-y Zr y )O3, etc.

[0026] Materials for forming the dielectric layer 111 can be added with various ceramic additives, organic solvents, plasticizers, binders, dispersants, etc. according to the purpose of the present invention to powders such as barium titanate (BaTiO3).

[0027] On the other hand, the thickness td of the dielectric layer 111 does not need to be particularly limited.

[0028] However, generally, when the dielectric layer is formed thinner than 0.6 μm, especially when the thickness of the dielectric layer is 0.41 μm or less, the moisture resistance reliability may decrease.

[0029] As described below, when Cu is uniformly distributed at the interface between the dielectric layer and the internal electrode according to an embodiment of the present invention, even when the dielectric layer and the internal electrode are very thin, the reliability can be effectively improved. Therefore, even when the thickness of the dielectric layer is 0.41 μm or less, sufficient reliability can be ensured.

[0030] That is, when the thickness of the dielectric layer 111 is 0.41 μm or less, the effect of improving the reliability according to the present invention can be made more remarkable.

[0031] The thickness td of the dielectric layer 111 can mean the average thickness of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122.

[0032] The average thickness of the dielectric layer 111 can be measured by scanning an image of a cross section in the length and thickness directions (L-T) of the main body 110 with a scanning electron microscope (SEM).

[0033] For example, for an arbitrary dielectric layer extracted from an image scanned with a scanning electron microscope (SEM) of a cross section in the length and thickness directions (L-T) cut at the central portion in the width direction of the main body 110, the thickness can be measured at 30 points equally spaced in the length direction, and the average value can be measured.

[0034] The thickness measured at the 30 equally spaced points can be measured in the capacitance forming portion A which means the region where the first and second internal electrodes 121 and 122 overlap each other.

[0035] The main body 110 can include a capacitance forming portion A in which a capacitance is formed, which is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 disposed to face each other with the dielectric layer 111 interposed therebetween, and cover portions 112 and 113 formed on the upper and lower portions of the capacitance forming portion A.

[0036] Further, the capacitance forming portion A is a portion that contributes to the capacitance formation of the capacitor, and can be formed by repeatedly laminating a plurality of first and second internal electrodes 121 and 122 with a dielectric layer 111 interposed therebetween.

[0037] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion A, respectively, and can basically play a role of preventing damage to the internal electrodes due to physical or chemical stress.

[0038] The upper cover portion 112 and the lower cover portion 113 can contain the same material as the dielectric layer 111 without including internal electrodes.

[0039] That is, the upper cover portion 112 and the lower cover portion 113 can contain a ceramic material, for example, can contain a barium titanate (BaTiO3)-based ceramic material.

[0040] On the other hand, the thickness of the cover portions 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tp of the cover portions 112 and 113 can be 20 μm or less.

[0041] Also, margin portions 114 and 115 can be arranged on the side surfaces of the capacitance forming portion A.

[0042] The margin portions 114 and 115 can include a margin portion 114 arranged on the sixth surface 6 of the main body 110 and a margin portion 115 arranged on the fifth surface 5. That is, the margin portions 114 and 115 can be arranged on both side surfaces in the width direction of the ceramic main body 110.

[0043] As shown in FIG. 3, the margin portions 114 and 115 can mean the regions between the interfaces of both ends of the first and second internal electrodes 121 and 122 and the main body 110 in a cross section obtained by cutting the main body 110 in the width-thickness (W-T) direction.

[0044] The margin portions 114 and 115 can basically serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0045] The margin portions 114 and 115 can be formed by applying a conductive paste except where the margin portions are formed on the ceramic green sheet and forming the internal electrodes.

[0046] Also, in order to suppress the step by the internal electrodes 121 and 122, after cutting so that the internal electrodes after lamination are exposed on the fifth and sixth surfaces 5 and 6 of the main body, a single dielectric layer or two or more dielectric layers can be laminated in the width direction on both side surfaces of the capacitance forming portion A to form the margin portions 114 and 115.

[0047] The internal electrodes 121 and 122 are alternately laminated with the dielectric layer 111.

[0048] The internal electrodes 121 and 122 can include the first and second internal electrodes 121 and 122. The first and second internal electrodes 121 and 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be exposed on the third and fourth surfaces 3 and 4 of the main body 110, respectively.

[0049] Referring to FIG. 2, the first internal electrode 121 can be separated from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed through the fourth surface 4.

[0050] At this time, the first and second internal electrodes 121 and 122 can be electrically separated from each other by the dielectric layer 111 disposed in the middle.

[0051] Referring to FIG. 4, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with the first internal electrode 121 and a ceramic green sheet printed with the second internal electrode 122 and then firing them.

[0052] The CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in the depth range of 5 nm from the interface with the dielectric layer of the internal electrodes 121 and 122 of the present invention may be 25.0% or less.

[0053] The work function of Ni is about 5.04 to 5.35, and the work function of Cu is about 4.53 to 5.10. Therefore, as the Cu content increases in the Ni-Cu alloy, the work function tends to decrease.

[0054] When the Cu content is unevenly distributed at the interface between the internal electrode and the dielectric layer, as the work function becomes uneven, the reliability may decrease. This is because the work function from the position where the Cu content is relatively high becomes low, increasing the possibility of current flow. The more uniformly Cu is distributed within the internal electrode, the more the reliability can be improved, and particularly when Cu is uniformly distributed at the interface between the dielectric layer and the internal electrode, the reliability is improved.

[0055] According to an embodiment of the present invention, by controlling the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in the depth range of 5 nm from the interface with the dielectric layer 111 to 25.0% or less, the Cu content can be uniformly distributed at the interface between the internal electrodes 121 and 122 and the dielectric layer 111, thereby improving the reliability.

[0056] When the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in the depth range of 5 nm from the interface with the dielectric layer 111 exceeds 25.0%, the high-temperature load reliability and moisture resistance reliability may become inferior.

[0057] Therefore, it is preferable that the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in the depth range of 5 nm from the interface with the dielectric layer 111 of the internal electrodes 121 and 122 is 25.0% or less.

[0058] However, in order to further improve the moisture resistance reliability, the internal electrodes 121 and 122 may have a coefficient of variation (CV value) of Cu / Ni (weight ratio) in the depth region of 5 nm from the interface with the dielectric layer of 9.2% or less.

[0059] The CV value (Coefficient of Variation) means a value obtained by expressing the standard deviation as a percentage of the average value.

[0060] Assuming that the average value of Cu / Ni (weight ratio) in the depth region of 5 nm from the interface with the dielectric layer in the internal electrodes 121 and 122 is x1, and the standard deviation of Cu / Ni (weight ratio) in the depth region of 5 nm from the interface with the dielectric layer in the internal electrodes 121 and 122 is s1, the CV value of Cu / Ni (weight ratio) is s1 / x1 * 100 (%).

[0061] Referring to FIGS. 2 and 5, in the cross section in the length and thickness directions (L-T) cut at the central portion in the width direction of the main body 110, for one internal electrode located at the center in the length and thickness directions, quantitative analysis of 10 points (p1 to p10) that are 5 nm deep into the internal electrode side from the regions of the upper and lower interfaces of the internal electrode and the dielectric layer is performed using an energy dispersive X-ray spectrometer (EDS) to obtain the respective Cu / Ni (weight ratio) values. Then, the average x1 and the standard deviation s1 for the above 10 Cu / Ni (weight ratio) values are obtained, and the CV value of Cu / Ni (weight ratio) can be obtained.

[0062] On the other hand, the method for controlling the CV value of Cu / Ni (weight ratio) does not particularly need to be limited. For example, it can be controlled by adjusting the particle size of the conductive powder contained in the conductive paste for the internal electrode, the firing conditions, and the like.

[0063] Specifically, by controlling the average size of the Cu powder contained in the conductive paste for the internal electrode to 120 nm or less, the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) can be controlled to 25.0% or less.

[0064] Also, by controlling the average size of the Cu powder contained in the conductive paste for the internal electrode to 50 nm or less, the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) can be controlled to 9.2% or less.

[0065] On the other hand, the Cu content contained in the internal electrode is not particularly limited, but it is preferably 0.4 to 6.0 wt%.

[0066] When the Cu content is less than 0.4 wt%, the effect of improving reliability may be insufficient, and when it exceeds 6.0 wt%, even if Cu is uniformly distributed in the internal electrode, the reliability may decrease.

[0067] According to one embodiment of the present invention, Ni and Cu contained in the internal electrodes 121 and 122 can be contained in the form of a Ni-Cu alloy.

[0068] By containing Ni and Cu in the form of a Ni-Cu alloy, the effect of adding Cu can be improved, and Cu contained in the internal electrode can be uniformly distributed in the internal electrode.

[0069] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0070] However, generally, when the internal electrodes 121 and 122 are formed thinly with a thickness of less than 0.6 μm, especially when the thickness of the internal electrodes 121 and 122 is 0.41 μm or less, the moisture resistance reliability may decrease.

[0071] As described above, according to an embodiment of the present invention, when Cu is uniformly distributed at the interface between the dielectric layer and the internal electrode, even when the dielectric layer and the internal electrode are very thin, the reliability can be effectively improved. Therefore, even when the thicknesses of the internal electrodes 121 and 122 are 0.41 μm or less, sufficient moisture resistance reliability can be ensured.

[0072] Therefore, when the thicknesses of the internal electrodes 121 and 122 are 0.41 μm or less, the effect of improving the reliability according to the present invention can be made more remarkable, and miniaturization and high capacitance of the capacitor component can be more easily achieved.

[0073] The thickness te of the internal electrodes 121 and 122 can mean the average thickness of the internal electrodes 121 and 122.

[0074] The average thickness of the internal electrodes 121 and 122 can be measured by scanning an image of a cross section in the length and thickness directions (L-T) of the main body 110 with a scanning electron microscope (SEM).

[0075] For example, for any first and second internal electrodes 121 and 122 extracted from an image scanned with a scanning electron microscope (SEM) of a cross section in the length and thickness directions (L-T) cut at the central portion in the width (W) direction of the main body 110, the thickness can be measured at 30 points equally spaced in the length direction, and the average value can be measured.

[0076] The external electrodes 131 and 132 are disposed on the main body 110 and connected to the internal electrodes 121 and 122.

[0077] As shown in the form shown in FIG. 2, it can include first and second external electrodes 131 and 132 respectively disposed on the third and fourth surfaces 3 and 4 of the main body 110 and connected to the first and second internal electrodes 121 and 122.

[0078] In this embodiment, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described. However, the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the shape of the internal electrodes 121 and 122 and other purposes.

[0079] On the other hand, the external electrodes 131 and 132 may be formed of any material as long as it has electrical conductivity such as metal. A specific material can be determined in consideration of electrical characteristics, structural stability, etc., and it can further have a multilayer structure.

[0080] For example, the external electrodes 131 and 132 can include electrode layers 131a and 132a disposed on the main body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

[0081] Specific examples of the electrode layers 131a and 132a include fired electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin.

[0082] Also, the electrode layers 131a and 132a can be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body. Further, the electrode layers 131a and 132a can be formed by a method of transferring a sheet containing a conductive metal onto the main body, or can be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0083] As the conductive metal contained in the electrode layers 131a and 132a, a material excellent in electrical conductivity can be used, but it is not particularly limited. For example, the conductive metal can be one or more of nickel (Ni), copper (Cu), and their alloys.

[0084] The plating layers 131b and 132b play a role in improving mounting characteristics. The types of the plating layers 131b and 132b are not particularly limited, and can be plating layers containing one or more of Ni, Sn, Pd, and their alloys, and can be formed of a plurality of layers.

[0085] As for specific examples of the plating layers 131b and 132b, the plating layers 131b and 132b can be Ni plating layers or Sn plating layers, and can be in a form in which a Ni plating layer and a Sn plating layer are sequentially formed on the electrode layers 131a and 132a, or can be in a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed. Also, the plating layers 131b and 132b can include a plurality of Ni plating layers and / or a plurality of Sn plating layers. Further, the plating layers 131b and 132b can be in a form in which a Ni plating layer and a Pd plating layer are sequentially formed on the electrode layers 131a and 132a.

[0086] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0087] However, in order to simultaneously achieve miniaturization and high capacitance, since it is necessary to reduce the thickness of the dielectric layer and the internal electrodes and increase the number of laminations, in a multilayer electronic component having a size of 0402 (length × width, 0.4 mm × 0.2 mm) or less, the effect of improving the reliability according to the present invention can become more remarkable.

[0088] Therefore, considering manufacturing errors, external electrode sizes, etc., when the length of the multilayer electronic component is 0.44 mm or less and the width is 0.22 mm or less, the effect of improving the reliability according to the present invention can become more remarkable.

[0089] Hereinafter, a method for manufacturing the multilayer electronic component 100 according to an embodiment of the present invention will be described.

[0090] First, a plurality of ceramic green sheets are prepared.

[0091] The ceramic green sheet is for forming the dielectric layer 111 of the main body 110, and a slurry can be manufactured by mixing ceramic powder, a polymer, and a solvent, and the slurry can be fabricated into a sheet having a predetermined thickness by a method such as a doctor blade.

[0092] Thereafter, a conductive paste for internal electrodes is printed on at least one surface of each of the above ceramic green sheets with a predetermined thickness to form internal electrodes.

[0093] The conductive paste for internal electrodes contains Ni powder and Cu powder.

[0094] At this time, the average size of the Cu powder may be 120 nm or less. By controlling the average size of the Cu powder to 120 nm or less, the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in the depth region of 5 nm from the interface with the dielectric layer in the internal electrode can be controlled to 25.0% or less.

[0095] Also, the average size of the Cu powder may be 50 nm or less. By controlling the average size of the Cu powder to 50 nm or less, the CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in the depth region of 5 nm from the interface with the dielectric layer in the internal electrode can be controlled to 9.2% or less.

[0096] As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used.

[0097] Referring to FIG. 4, a ceramic green sheet on which a first internal electrode 121 is printed and a ceramic green sheet on which a second internal electrode 122 is printed are alternately laminated, and the laminated plurality of ceramic green sheets and the internal electrodes formed on the ceramic green sheets are pressure-bonded to each other to form a laminate.

[0098] Also, at least one or more ceramic green sheets can be laminated above and below the laminate to form cover portions 112 and 113.

[0099] The cover parts 112 and 113 can be made of the same composition as the dielectric layer 111 located inside the laminate, and have a difference from the dielectric layer 111 in that they do not contain internal electrodes.

[0100] Thereafter, after cutting the above laminate into regions corresponding to each capacitor and chip-forming, it is fired at a high temperature to complete the main body 110.

[0101] Thereafter, the first and second external electrodes 131 and 132 can be formed so as to cover the exposed portions of the first and second internal electrodes exposed on both side surfaces of the main body 110 and be electrically connected to the first and second internal electrodes.

[0102] At this time, the surfaces of the first and second external electrodes 131 and 132 can be plated with nickel or tin as necessary.

[0103] [Example] A sample chip having an internal electrode formed using a conductive paste for an internal electrode to which 6.0 wt% of Cu powder having an average size shown in Table 1 below was added based on 100 wt% of Ni powder was prepared.

[0104] The CV value of Cu / Ni (weight ratio) in the depth region of 5 nm from the interface with the dielectric layer in the internal electrode was measured, and the high-temperature load reliability and moisture resistance reliability were evaluated.

[0105] The CV value was obtained by performing quantitative analysis of 10 points (p1 to p10) entered 5 nm from the regions of the upper and lower interfaces of the internal electrode and the dielectric layer toward the internal electrode side for one internal electrode located at the center in the length and thickness directions in the cross section in the length and thickness directions (L-T) cut at the center in the width direction of the main body 110 using an EDS (Energy Dispersive X-ray Spectrometer), obtaining the respective Cu / Ni (weight ratio) values, and obtaining the average x1 and standard deviation s1 for the above 10 Cu / Ni (weight ratio) values to calculate the CV value of Cu / Ni (weight ratio) (= s1 / x1 * 100 (%)).

[0106] For the high-temperature load reliability, a high-temperature load test was carried out on 400 samples per test number under the conditions of 125°C and 8V, and the MTTF (Mean Time To Failure) was measured. At this time, the time when the insulation resistance became 10 KΩ or less was defined as the failure time.

[0107] For the humidity resistance reliability, when a voltage of 8V was applied to 400 samples per test number at a temperature of 85°C and a relative humidity of 85% for 60 hours, samples among the 400 samples whose insulation resistance value decreased to 1 / 10 or less of the initial value were evaluated as defective, and the percentage of the number of defective samples was described.

[0108]

Table 1

[0109] In the case of test numbers 7 to 9 where the CV value exceeds 25.0%, it can be confirmed that the MTTF is short and the humidity resistance failure rate is also high.

[0110] On the other hand, in the case of test numbers 1 to 6 where the CV value is 25.0% or less, it can be confirmed that they are excellent in high-temperature reliability and humidity resistance reliability.

[0111] Also, in the case of test numbers 1 to 3 where the CV value is 9.2% or less, it can be confirmed that the humidity resistance failure is extremely low and the humidity resistance reliability is extremely excellent.

[0112] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the attached drawings, but is limited by the attached claims. Therefore, within the scope not departing from the technical idea of the present invention described in the claims, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the technical field, and it can be said that this also belongs to the scope of the present invention.

Explanation of Reference Numerals

[0113] 100 Multilayer electronic component 110 Body 111 Dielectric layer 112, 113 Cover part 114, 115 Margin part 121, 122 Internal electrode 131, 132 External electrode 131a Electrode layer 132b Plating layer

Claims

1. A main body including a dielectric layer and internal electrodes alternately laminated with the dielectric layer interposed therebetween, and an external electrode disposed on the main body and connected to the internal electrode. The internal electrode contains Cu and Ni, with Ni as the main component, and the internal electrode has a CV value (Coefficient of Variation) of Cu / Ni (weight ratio) in a depth region of 5 nm from the interface with the dielectric layer of 25.0% or less, and the Cu content of the internal electrode is 6.0 wt% or less. A multilayer electronic component.

2. The multilayer electronic component according to Claim 1, wherein the CV value is 9.2% or less.

3. The multilayer electronic component according to Claim 1 or 2, wherein the Cu content of the internal electrode is 0.4 wt% or more.

4. The multilayer electronic component according to any one of Claims 1 to 3, wherein the Ni and the Cu are contained in the form of a Ni-Cu alloy.

5. The multilayer electronic component according to any one of Claims 1 to 4, wherein the average thickness of the internal electrode is 0.41 μm or less.

6. The multilayer electronic component according to any one of Claims 1 to 5, wherein the average thickness of the dielectric layer is 0.41 μm or less.

7. The multilayer electronic component according to any one of Claims 1 to 6, wherein the length of the multilayer electronic component is 0.44 mm or less and the width is 0.22 mm or less.

8. A method for manufacturing a multilayer electronic component according to any one of Claims 1 to 7, comprising: forming the internal electrode using a conductive paste for the internal electrode containing Ni powder and Cu powder, wherein the average size of the Cu powder is 120 nm or less. A method for manufacturing a multilayer electronic component.

9. The method for manufacturing a multilayer electronic component according to Claim 8, wherein the average size of the Cu powder is 50 nm or less.

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