Heat treatment apparatus, control method, and program

Abstract

To provide a thermal treatment apparatus for correcting the temperature of thermal treatment in accordance with the number of times of cleaning treatment on a deposit which is deposited on a treatment container, a control method and a program.SOLUTION: The present invention relates to a thermal treatment apparatus which comprises a control device and performs thermal treatment on a treated object housed in a treatment container. The control device includes: a thermal treatment control unit for controlling the thermal treatment in accordance with a treatment condition; a cleaning control unit for controlling cleaning treatment on a deposit which is deposited on the treatment container by the thermal treatment; a cumulative film thickness identification unit for identifying the value of a cumulative film thickness of the deposit which is deposited on the processing container based on the treatment condition according to which the thermal treatment is performed; and a temperature correction unit for correcting the temperature of the thermal treatment based on the value of the cumulative film thickness and a temperature correction amount corresponding to the number of times of cleaning treatment.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to a heat treatment apparatus, a control method, and a program.

Background Art

[0002] In a semiconductor device manufacturing process, a heat treatment system for performing a film formation process on a workpiece, for example, a semiconductor wafer, is used. In the heat treatment system, treatment conditions such as a treatment temperature, a treatment pressure, and a gas flow rate are determined according to the type and thickness of the thin film to be formed, and a recipe in which these treatment conditions are written is prepared. In the heat treatment system, a film formation process or the like is performed based on predetermined treatment conditions by selecting a recipe according to the type and thickness of the thin film.

[0003] In a conventional heat treatment system, for each temperature (treatment temperature) inside the heat treatment apparatus, a temperature correction table showing the relationship between the cumulative film thickness of deposits adhering to the inside of the apparatus and the temperature correction amount is stored, and the temperature correction amount is specified based on the treatment temperature and the cumulative film thickness (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique for correcting the temperature of heat treatment according to the number of cleaning processes of deposits adhering to a processing container.

Means for Solving the Problems

[0006] One aspect of the present disclosure is a heat treatment apparatus having a control device for heat-treating a workpiece accommodated in a processing container, wherein the control device includes a heat treatment control unit configured to control the heat treatment according to processing conditions, a cleaning control unit configured to control a cleaning process for deposits adhering to the processing container by the heat treatment, a cumulative film thickness specifying unit configured to specify a value of a cumulative film thickness of deposits adhering to the processing container based on the heat treatment conditions, and a temperature correction unit configured to correct the temperature of the heat treatment based on the value of the cumulative film thickness and a temperature correction amount corresponding to the number of cleaning processes.

Effect of the Invention

[0007] According to the present disclosure, it is possible to provide a technique for correcting the temperature of heat treatment according to the number of cleaning processes for deposits adhering to a processing container.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0009] Hereinafter, with reference to the drawings, embodiments for carrying out the present invention will be described. In the present specification and the drawings, illustrations and descriptions of parts unnecessary for the description of the present embodiment are appropriately omitted.

[0010] In the present embodiment, a film forming apparatus 1 which is an example of a heat treatment apparatus will be described. FIG. 1 shows an example of a cross-sectional view of a film forming apparatus according to an embodiment of the present invention. FIG. 2 shows an example of an exploded perspective view of a film forming apparatus according to an embodiment of the present invention.

[0011] The film forming apparatus 1 forms a film on a wafer W which is an example of an object to be processed. For example, after the film forming apparatus 1 adsorbs a source gas to the wafer W, an oxidation gas is supplied to the surface of the wafer W to form a molecular layer. The film forming apparatus 1 exposes the wafer W to plasma generated from a plasma generating gas and performs a process of modifying the molecular layer. The film forming apparatus 1 forms a film by repeatedly performing a series of processes on the wafer W a plurality of times. The source gas and the oxidation gas are examples of process gases.

[0012] The film forming apparatus 1 includes a generally circular flat processing container 11 and a disk-shaped rotating table 2 provided in the processing container 11. The rotating table 2 is an example of a stage configured to place the wafer W. The processing container 11 is composed of a top plate 12 and a container body 13 forming the side wall and the bottom of the processing container 11.

[0013] The rotating table 2 is made of, for example, quartz glass (hereinafter referred to as quartz), and a metal rotating shaft 21 extending vertically downward is provided at the center. The rotating shaft 21 is inserted into a sleeve 141 having an opening 14 formed at the bottom of the container body 13. The rotating shaft 21 is connected to a rotation driving unit 22 provided at the lower end of the sleeve 141 so as to airtightly close the processing container 11. The rotating table 2 is horizontally supported in the processing container 11 via the rotating shaft 21 and rotates by the action of the rotation driving unit 22.

[0014] Further, at the upper end of the sleeve 141, a gas nozzle 15 for supplying N2 (nitrogen) gas is provided in the gap between the opening 14 of the sleeve 141 and the container body 13 and the rotating shaft 21 in order to prevent the raw material gas, oxidation gas, etc. from swirling from the upper surface side to the lower surface side of the rotating table 2.

[0015] On the other hand, on the lower surface of the top plate 12 constituting the processing container 11, a central region C having an annular shape in plan view is formed so as to project toward the center of the rotating table 2. The gap between the central region C and the center of the rotating table 2 constitutes the N2 gas flow path 18.

[0016] N2 gas is supplied to the flow path 18 from a gas supply pipe connected to the top plate 12. The N2 flowing into the flow path 18 is discharged radially outward of the rotating table 2 over the entire circumference from the gap between the upper surface of the rotating table 2 and the central region C. The N2 gas prevents the raw material gas and the oxidation gas supplied at different positions on the rotating table 2 from contacting each other by bypassing the center (flow path 18) of the rotating table 2.

[0017] The exploded perspective view of FIG. 2 shows a state in which the top plate 12 and the rotating table 2 are removed from the film forming apparatus 1. On the bottom surface of the container body 13 located below the rotating table 2, a flat annular recess 31 is formed along the circumferential direction of the rotating table 2. A heater 33 is arranged over the region of the bottom surface of the recess 31 facing the entire lower surface of the rotating table 2.

[0018] The heater 33 is composed of a combination of a number of heater elements 331 which are formed in an arc shape with a length of about ten to several tens of centimeters, for example, and are slender tubular carbon wire heaters. By combining a plurality of arc-shaped heater elements 331, the heater 33 is arranged in the recess 31 so as to draw a plurality of concentric circles centered on the rotating shaft 21.

[0019] The heater 33 is disposed in a floating state from the bottom surface of the recess 31 so as to be substantially parallel to the bottom surface when viewed from the side. Both ends of the heater 33 are bent downward and are connected to a power supply unit 333 provided outside the processing container 11 through a connection port that penetrates the bottom plate of the container body 13. The power supply unit 333 is controlled by the control device 7. The control device 7 can, for example, divide the disposed heater 33 into regions and adjust the output of the heater 33 for each divided region. The upper surface of the recess 31 in which the heater 33 is disposed is closed by a shield 34 which is an annular plate member made of, for example, quartz.

[0020] In addition, exhaust ports 35 and 36 for exhausting the inside of the processing container 11 are opened in the bottom surface of the container body 13 located on the outer peripheral side of the recess 31. A vacuum exhaust mechanism (not shown) constituted by a vacuum pump or the like is connected to the exhaust ports 35 and 36.

[0021] An inlet / outlet 37 for the wafer W and a gate valve 38 for opening and closing the inlet / outlet 37 are provided on the side wall of the container body 13. The wafer W held by an external transfer mechanism is carried into the processing container 11 through the inlet / outlet 37. A plurality of recesses 25 forming a placement region for the wafer W are formed on the upper surface of the rotary table 2 so as to surround the flow path 18 at the center. The wafer W carried into the processing container 11 is placed in each of the recesses 25. The transfer of the wafer W between the transfer mechanism and the recesses is performed through a lifting pin configured to be movable up and down between an upper position and a lower position above the rotary table 2 through a through hole (not shown) provided in each of the recesses 25, but the description of the lifting pin is omitted.

[0022] Above the rotary table 2, a raw material gas nozzle 51, a separation gas nozzle 52, an oxidation gas nozzle 53, a plasma gas nozzle 54, and a separation gas nozzle 55 are arranged at intervals along the rotation direction of the rotary table 2. A large number of discharge ports 56 are formed at intervals on the lower surfaces of these gas nozzles, and each gas is discharged downward from the discharge ports 56.

[0023] In addition, a plasma forming part 61 made of a dielectric such as quartz, having a planar shape corresponding to the opening, and having a cup-shaped longitudinal side surface shape is inserted into the opening of the top plate 12. A ridge part 62 is provided along the peripheral part of the plasma forming part 61 on the lower surface of the plasma forming part 61. The plasma gas nozzle 54 is inserted so as to discharge gas into the region surrounded by the ridge part 62.

[0024] A depression is formed on the upper surface side of the plasma forming part 61. A box-shaped Faraday shield 63 with an open upper surface is arranged in this depression. An insulating plate member 64 is arranged on the bottom surface of the Faraday shield 63. On the upper surface side thereof, an antenna 65 for plasma generation, which is formed by winding a metal wire in a coil shape around a vertical axis and is connected to a high-frequency power source 66, is provided.

[0025] The film forming apparatus 1 is provided with a control device 7 composed of a computer for controlling the operation of the entire apparatus. A program for controlling the operation of the entire apparatus is stored in the control device 7. By executing the program, the control device 7 transmits control signals to each part of the film forming apparatus 1 to control the operation of each part.

[0026] For example, the control device 7 controls the adjustment of the supply amount of various gases, the output control of the heater 33, the adjustment of the supply amount of N2 gas, the adjustment of the rotation speed of the rotation table 2 by the rotation drive part 22, etc. The program is installed in the control device 7 from a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk.

[0027] The control device 7 controls the operation of the film forming apparatus 1 so that a film forming process is performed under various processing conditions shown in the recipe. The recipe has processing conditions of a process including, for example, 20 to 30 steps set. In addition, the control device 7 can display a screen for receiving input of information from an operator and display a screen for outputting information such as results to the operator. The control device 7 may be built into the film forming apparatus 1 or may be connected to the film forming apparatus 1 via a communication path.

[0028] The communication path may be a wired communication method or a wireless communication method, and any communication path for exchanging various signals inside and outside the computer may be used. The communication path may utilize a network such as a local area network (LAN).

[0029] In the film forming apparatus 1 having the configuration described above, the rotating table 2 is heated by the heater 33, and the wafer W placed in each recess 25 via the rotating table 2 is heated. The film forming apparatus 1 according to the present embodiment has a temperature correction function (hereinafter referred to as the cumulative film thickness temperature correction function) according to the cumulative film thickness of the deposits adhering to the inside of the processing container 11 by the film forming process.

[0030] In the cumulative film thickness temperature correction function, a temperature correction table showing the correspondence between the value of the cumulative film thickness of the processing container 11 and the temperature correction amount is used. Details of the temperature correction table will be described later. Also, the value of the cumulative film thickness of the processing container 11 increases by the film forming process and is reset to "0" by performing dry cleaning or wet cleaning. It is assumed that the dry cleaning process is performed more frequently than the wet cleaning process.

[0031] For the processing container 11 whose cumulative film thickness value has decreased due to the dry cleaning process, the cracks (such as cracks and fissures) of the rotating table 2 increase, and due to the increase in the consumption amount of the processing gas due to the increase in the surface area, the film thickness value of the wafer W formed by the film forming process decreases. The film thickness value of the wafer W decreased by the dry cleaning process gradually recovers as the value of the cumulative film thickness increases, and when the value of the cumulative film thickness becomes, for example, 5 μm or more, it returns to the film thickness value of the wafer W before the dry cleaning process. Thus, the cumulative film thickness temperature correction function adjusts the film thickness value of the wafer W formed by the film forming process by performing temperature correction of the heater 33 with a temperature correction amount corresponding to the value of the cumulative film thickness.

[0032] Also, by repeating the dry cleaning process, the processing container 11 may develop more cracks, and the film thickness value of the wafer W formed by the film forming process may further decrease. The film forming apparatus 1 according to the present embodiment realizes a cumulative film thickness temperature correction function according to the number of dry cleaning processes by using a temperature correction table according to the number of dry cleaning processes.

[0033] The control device 7 is realized by, for example, a computer 500 having the hardware configuration shown in FIG. 3. FIG. 3 is a hardware configuration diagram of an example of a computer.

[0034] The computer 500 in FIG. 3 includes an input device 501, an output device 502, an external I / F (interface) 503, a RAM (Random Access Memory) 504, a ROM (Read Only Memory) 505, a CPU (Central Processing Unit) 506, a communication I / F 507, and an HDD (Hard Disk Drive) 508, etc., and each is mutually connected by a bus B. Note that the input device 501 and the output device 502 may be connected and used when necessary.

[0035] The input device 501 is a keyboard, a mouse, a touch panel, etc., and is used for an operator or the like to input each operation signal. The output device 502 is a display or the like, and displays the processing result by the computer 500. The communication I / F 507 is an interface for connecting the computer 500 to a network or the like. The HDD 508 is an example of a non-volatile storage device that stores programs and data.

[0036] The external I / F 503 is an interface with an external device. The computer 500 can read and / or write a recording medium 503a such as an SD (Secure Digital) memory card via the external I / F 503. The ROM 505 is an example of a non-volatile semiconductor memory (storage device) in which programs and data are stored. The RAM 504 is an example of a volatile semiconductor memory (storage device) that temporarily holds programs and data.

[0037] The CPU 506 is an arithmetic unit that realizes the control and functions of the entire computer 500 by reading programs and data from storage devices such as the ROM 505 and the HDD 508 onto the RAM 504 and executing processing.

[0038] The control device 7 shown in FIG. 1 can realize various functions in FIG. 4 by the computer 500 with the hardware configuration in FIG. 3 executing processing according to a program.

[0039] FIG. 4 is a diagram showing an example of the functional configuration of the control device according to the present embodiment. The control device 7 shown in FIG. 4 includes a control unit 200, an operation reception unit 202, an output control unit 204, a communication unit 206, and a storage unit 210.

[0040] The storage unit 210 in FIG. 4 stores a program 212, a recipe storage unit 214, a temperature correction table storage unit 216, and a maintenance management item storage unit 218. The storage unit 210 may be realized by the HDD 508, or may be realized by a storage device communicably connected via a network or the like. The program 212 is an example of a program that controls the operation of the entire film forming apparatus 1.

[0041] The recipe storage unit 214 stores recipes in which the processing conditions of the processes executed in the film forming apparatus 1 are set. The temperature correction table storage unit 216 stores the temperature correction table described later. The maintenance management item storage unit 218 stores maintenance management items such as the number of dry cleaning processes and the value of the cumulative film thickness.

[0042] The control unit 200 performs overall control of the film forming apparatus 1. The overall control of the film forming apparatus 1 includes control of the process of storing a recipe, control of the process of storing a temperature correction table, control of the process of storing maintenance management items, control of a film forming process according to a recipe, control of the process of the cumulative film thickness temperature correction function, control of the dry cleaning process, etc. based on the operations received from the operator.

[0043] The control unit 200 is realized by the CPU 506 executing the processes described in programs such as program 212. The control unit 200 in FIG. 4 has a configuration including a heat treatment control unit 240, a cleaning control unit 242, an accumulated film thickness specifying unit 244, a temperature correction unit 246, a temperature correction table management unit 248, and a maintenance management unit 250.

[0044] The heat treatment control unit 240 controls the operation of the film forming apparatus 1 so that a film forming process is performed under the processing conditions of the process shown in the recipe. The cleaning control unit 242 controls the operation of the film forming apparatus 1 so that a dry cleaning process is performed. The accumulated film thickness specifying unit 244 specifies the value of the accumulated film thickness of the deposits adhering to the processing container 11 based on the recipe for which the film forming process was performed. The maintenance management unit 250 stores and manages the maintenance management items including the number of dry cleaning processes and the value of the accumulated film thickness in the maintenance management item storage unit 218.

[0045] The temperature correction table management unit 248 stores and manages the temperature correction table described later in the temperature correction table storage unit 216. Further, the temperature correction table management unit 248 receives an editing operation of the temperature correction table from an operator or the like and edits the temperature correction table stored in the temperature correction table storage unit 216.

[0046] The temperature correction unit 246 reads out a temperature correction amount corresponding to the value of the accumulated film thickness and the number of dry cleaning processes from the temperature correction table, and adjusts the temperature of the heater 33 by the read temperature correction amount, thereby adjusting the value of the film thickness of the wafer W formed by the film forming process.

[0047] The operation reception unit 202 receives various operations of the operator on the input device 501. The output control unit 204 displays various screens on the output device 502 according to the control of the control unit 200. The operation reception unit 202 is realized by the CPU 506 controlling the input device 501 according to the program 212. Also, the output control unit 204 is realized by the CPU 506 controlling the output device 502 according to the program 212. The various operations of the operator on the input device 501 refer to the operations by which the operator operates the operation reception unit 202 to cause the CPU 506 to execute processing. The output control unit 204 performs the display of various screens and the output of sound according to the control of the control unit 200.

[0048] The communication unit 206 communicates via a network or the like. The communication unit 206 is realized by the CPU 506 executing the program 212 and controlling the communication I / F 507 according to the program 212.

[0049] The temperature correction table management unit 248 displays the editing screen 1000 shown in FIG. 5 and receives the editing of the temperature correction table from the operator. FIG. 5 is an image diagram of an example of the editing screen. The editing screen 1000 in FIG. 5 has a dry cleaning times editing column 1002 and a temperature correction table editing column 1004.

[0050] The dry cleaning times editing column 1002 includes a table selection button 1010 and a column 1012 for setting the dry cleaning times for each temperature correction table. The table selection button 1010 in FIG. 5 shows an example in which the operator can select the temperature correction tables from "Table 1" to "Table 10". The operator can switch the temperature correction table displayed in the temperature correction table editing column 1004 by operating the table selection button 1010. Also, the operator can set the correspondence between the number of dry cleaning processes and the temperature correction table by setting the number of dry cleaning processes in the column 1012 for setting the dry cleaning times.

[0051] For example, the editing screen 1000 in Fig. 5 shows a state where the table selection button 1010 for "Table 1" is selected, and the temperature correction table for "Table 1" is displayed in the temperature correction table editing column 1004. The temperature correction table tabulates the correspondence between the reference film thickness and the temperature correction amount for each region, so that the correspondence between the value of the cumulative film thickness and the temperature correction amount can be linearly interpolated.

[0052] In the example of Fig. 5, 10 reference film thicknesses can be set in association with "Line 1" to "Line 10". The editing screen 1000 in Fig. 5 represents an example where "Line 1" to "Line 5" are displayed. The operator can switch to the editing screen 1000 that displays "Line 6" to "Line 10" by operating the next page button 1008.

[0053] In the temperature correction table editing column 1004 of Fig. 5, "Region 1" to "Region 5" represent, for example, the division of the region inside the processing container 11 heated by the heater 33. For example, the region inside the processing container 11 may be set such that the outside of the rotating table 2 is "Region 1", the inside of the rotating table 2 is "Region 5", the middle between "Region 1" and "Region 5" is "Region 3", the middle between "Region 1" and "Region 3" is "Region 2", and the middle between "Region 3" and "Region 5" is "Region 4".

[0054] In the example of Fig. 5, the temperature correction amount for each region is set for each reference film thickness from "Line 1" to "Line 10". The temperature correction amount can be set within the set range of the correction temperature. The temperature for each region determined by the recipe is corrected according to the temperature correction amount. If the "value of the cumulative film thickness" stored as a maintenance management item is outside the range of the reference film thickness of the temperature correction table in Fig. 5, the temperature correction amount for each region of "Line 1" with the minimum reference film thickness or "Line 10" with the maximum reference film thickness may be adopted.

[0055] Note that the operator can reset the data of the temperature correction table selected on the editing screen 1000 to "0" as shown in FIG. 6, for example, by pressing the table reset button 1006 on the editing screen 1000. Also, the cumulative film thickness temperature correction function may be made switchable by the operator between "enabled" and "disabled". FIG. 6 is an image diagram showing an example of an editing screen in which the data of the temperature correction table has been reset.

[0056] The "number of dry cleaning processes" stored as a maintenance management item is incremented by "1" when the dry cleaning process according to the cleaning recipe is normally completed. The "number of dry cleaning processes" stored as a maintenance management item needs to be reset to "0" after performing wet cleaning or replacing the susceptor on which the wafer W is placed. The film forming apparatus 1 according to the present embodiment enables automatic or manual reset of the "number of dry cleaning processes" stored as a maintenance management item to "0".

[0057] Furthermore, the process of setting the number of dry cleaning processes in the column 1012 for setting the number of dry cleaning processes will be further described. In the column 1012 for setting the number of dry cleaning processes, the number of dry cleaning processes can be set within an input range such as "0" to "99", for example.

[0058] In the present embodiment, the temperature editing table with "0" set in the column 1012 for setting the number of dry cleaning processes is not used. FIG. 7 is an image diagram of an example of an editing screen in which a temperature editing table that is not used is set. In the editing screen 1000 of FIG. 7, the temperature editing tables of "Table 1" and "Table 6" are not used.

[0059] Also, in the present embodiment, numerical values other than "0" cannot be set repeatedly in the column 1012 for setting the number of dry cleaning processes. For example, when numerical values other than "0" are set repeatedly in the column 1012 for setting the number of dry cleaning processes, an error or the like may be displayed in a pop-up manner.

[0060] In addition, the operator can set the number of dry cleaning processes in the field 1012 for setting the number of dry cleaning times, and as shown in FIG. 8, by using one temperature correction table corresponding to the number of dry cleaning processes, the cumulative film thickness temperature correction function can be realized.

[0061] FIG. 8 is an explanatory diagram of an example of a process of selecting one temperature correction table corresponding to the number of dry cleaning processes. The temperature correction unit 246 of the control device 7 compares the number of dry cleaning processes set in the field 1012 for setting the number of dry cleaning times with the number of dry cleaning processes stored as a maintenance management item (hereinafter referred to as the integrated value of the dry cleaning processes), and selects the temperature correction table to be used as follows.

[0062] If the integrated value of the dry cleaning processes is less than the number of dry cleaning processes set in the field 1012 for setting the number of dry cleaning times, the temperature correction unit 246 does not select a temperature editing table. Also, if the integrated value of the dry cleaning processes is equal to the number of dry cleaning processes set in the field 1012 for setting the number of dry cleaning times, the temperature correction unit 246 selects the matching temperature correction table.

[0063] If the integrated value of the dry cleaning processes is not less than and not equal to the number of dry cleaning processes set in the field 1012 for setting the number of dry cleaning times, the temperature correction unit 246 selects the temperature correction table in which the number of dry cleaning processes is closest to and less than the integrated value of the dry cleaning processes.

[0064] If the integrated value of the dry cleaning processes is greater than the number of dry cleaning processes set in the field 1012 for setting the number of dry cleaning times, the temperature correction unit 246 selects the temperature correction table in which the number of dry cleaning processes is closest to and less than the integrated value of the dry cleaning processes.

[0065] For example, in the case of the dry cleaning times editing column 1002 in Fig. 8(A), the temperature correction table selected by the temperature correction unit 246 when the integrated value of the dry cleaning process is from "0 times" to "99 times" is as shown in Fig. 8(B).

[0066] When the integrated value of the dry cleaning process is from "0 times" to "2 times", the integrated value of the dry cleaning process is less than the number of times of the dry cleaning process set in the column 1012 for setting the dry cleaning times. Therefore, the temperature correction unit 246 does not select the temperature editing table and does not perform the cumulative film thickness temperature correction.

[0067] When the integrated value of the dry cleaning process is from "3 times" to "6 times", the integrated value of the dry cleaning process coincides with the number of times of the dry cleaning process set in the column 1012 for setting the dry cleaning times. Therefore, the temperature correction unit 246 performs the cumulative film thickness temperature correction using the matching temperature correction table.

[0068] When the integrated value of the dry cleaning process is "7 times", the integrated value of the dry cleaning process does not coincide with the number of times of the dry cleaning process set in the column 1012 for setting the dry cleaning times. Therefore, the temperature correction unit 246 performs the cumulative film thickness temperature correction using the temperature correction table of "Table 5" which is the closest to and less than the integrated value of the dry cleaning process.

[0069] When the integrated value of the dry cleaning process is from "8 times" to "11 times", the integrated value of the dry cleaning process coincides with the number of times of the dry cleaning process set in the column 1012 for setting the dry cleaning times. Therefore, the temperature correction unit 246 performs the cumulative film thickness temperature correction using the matching temperature correction table.

[0070] When the integrated value of the dry cleaning process is between "12 times" and "99 times", the integrated value of the dry cleaning process exceeds the number of dry cleaning processes set in the column 1012 for setting the number of dry cleaning processes. Therefore, the temperature correction unit 246 performs cumulative film thickness temperature correction using the temperature correction table of "Table 10" in which the number of dry cleaning processes is closest to and less than the integrated value of the dry cleaning process.

[0071] During operation, for example as shown in FIG. 9, the film forming apparatus 1 according to the present embodiment selects a temperature correction table according to the integrated value of the number of dry cleaning processes, and performs cumulative film thickness temperature correction using the selected temperature correction table. FIG. 9 is a flowchart showing an example of the operation image of the film forming apparatus according to the present embodiment.

[0072] In step S100, the film forming apparatus 1 performs a dummy run. The dummy run is a process of forming a film on the members in the processing container 11 in order to adjust the film forming state of the wafer W before performing the film forming process on the wafer W. The dummy run is performed, for example, until the cumulative film thickness reaches 1 μm.

[0073] In step S102, the film forming apparatus 1 performs a production process including a film forming process on the wafer W until the cumulative film thickness reaches a predetermined value (for example, 10 μm). Since the number of dry cleaning processes stored as one of the maintenance management items is "0", the temperature correction unit 246 does not select the temperature editing table as described above and does not perform cumulative film thickness temperature correction.

[0074] The value of the cumulative film thickness stored as one of the maintenance management items is specified by the cumulative film thickness specifying unit 244 based on the recipe for which the film forming process has been performed. The value of the cumulative film thickness may be integrated and updated, for example, every time the process including the processes of 20 to 30 steps is completed, or may be integrated and updated every time the step process is completed. When the cumulative film thickness of the film forming apparatus 1 reaches a predetermined value (for example, 10 μm), the process proceeds to the process of step S104 after the process is completed.

[0075] In step S104, the film forming apparatus 1 performs the first dry cleaning process. The dry cleaning process is a process of supplying a cleaning gas into the processing container 11 to remove the deposits adhering to the inside of the processing container 11.

[0076] When the dry cleaning process is completed, the film forming apparatus 1 adds "1" to the number of times of the dry cleaning process stored as one of the maintenance management items. Also, the film forming apparatus 1 resets the value of the cumulative film thickness stored as one of the maintenance management items to "0".

[0077] In step S106, the film forming apparatus 1 performs a dummy Run. In step S108, the temperature correction unit 246 selects a temperature correction table corresponding to the number of times of the dry cleaning process stored as one of the maintenance management items as described above.

[0078] For example, in the case of the example in FIG. 5, if the number of times of the dry cleaning process stored as one of the maintenance management items is "1", the temperature correction unit 246 selects the temperature correction table of "Table 1".

[0079] In step S110, the film forming apparatus 1 performs a production process including a film forming process on the wafer W until the cumulative film thickness reaches a predetermined value (for example, 10 μm). During the production process in step S110, the temperature correction unit 246 performs cumulative film thickness temperature correction using the temperature editing table selected in step S108. For example, in the case of the example in FIG. 5, if the value of the cumulative film thickness stored as one of the maintenance management items is "150 nm", the temperature correction unit 246 performs cumulative film thickness temperature correction using the temperature correction amount of "Line 2".

[0080] Also, when the cumulative film thickness of the film forming apparatus 1 reaches a predetermined value (for example, 10 μm), after the process ends, it proceeds to the process of step S112. In step S112, the film forming apparatus 1 performs the dry cleaning process for the second time and later.

[0081] When the dry cleaning process is completed, the film forming apparatus 1 adds "1" to the number of dry cleaning processes stored as one of the maintenance management items. Further, the film forming apparatus 1 resets the value of the cumulative film thickness stored as one of the maintenance management items to "0".

[0082] In step S114, the film forming apparatus 1 determines whether or not the total value of the cumulative film thickness is equal to or greater than a predetermined value (for example, 160 μm). The total value of the cumulative film thickness is the total value of the cumulative film thickness reset to "0" by the dry cleaning process. If the total value of the cumulative film thickness is less than the predetermined value (for example, 160 μm), the film forming apparatus 1 returns to step S106 and continues the process.

[0083] Also, if the total value of the cumulative film thickness is equal to or greater than a predetermined value (for example, 160 μm), the film forming apparatus 1 performs wet cleaning in step S116. Wet cleaning is an operation for removing deposits adhering to the inside of the processing container 11 by an operator.

[0084] In step S118, the film forming apparatus 1 resets the number of dry cleaning processes stored as one of the maintenance management items to "0". In step S120, the film forming apparatus 1 resets the total value of the cumulative film thickness used in step S114 to "0". When the process of step S120 is completed, the film forming apparatus 1 returns to step S100 and continues the process.

[0085] As described above, according to the present embodiment, it is possible to provide a technique for correcting the temperature of the film forming process (heat treatment) according to the number of dry cleaning processes of deposits adhering to the processing container 11.

[0086] As described above, the preferred embodiments of the present invention have been described in detail. However, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the present invention.

[0087] For example, in the present embodiment, an example in which one control device 7 corresponds to one film forming apparatus 1 has been shown, but one control device 7 may correspond to a plurality of film forming apparatuses 1. The functions of the control device 7 may be provided in a host computer or a cloud computer communicably connected to the film forming apparatus 1.

Explanation of Signs

[0088] 1 Film forming apparatus 2 Rotating table 7 Control device 11 Processing container 33 Heater 200 Control unit 202 Operation reception unit 204 Output control unit 206 Communication unit 210 Storage unit 212 Program 214 Recipe storage unit 216 Temperature correction table storage unit 218 Maintenance management item storage unit 240 Heat treatment control unit 242 Cleaning control unit 244 Cumulative film thickness specifying unit 246 Temperature correction unit 248 Temperature correction table management unit 250 Maintenance management unit 333 Power supply unit

Claims

1. A heat treatment apparatus having a control device for heat-treating a workpiece housed in a processing container, wherein the control device comprises a heat treatment control unit configured to control the heat treatment according to processing conditions, a cleaning control unit configured to control cleaning of deposits adhering to the processing container by the heat treatment, an accumulated film thickness specifying unit configured to specify a value of an accumulated film thickness of deposits adhering to the processing container based on the heat treatment conditions, and a temperature correction unit configured to correct the temperature of the heat treatment based on the value of the accumulated film thickness and a temperature correction amount corresponding to the number of cleaning treatments. A heat treatment apparatus having the above components.

2. The heat treatment apparatus according to claim 1, wherein the temperature correction unit selects one temperature correction table corresponding to the number of cleaning treatments from a plurality of temperature correction tables showing a correspondence between the value of the accumulated film thickness and the temperature correction amount, and corrects the temperature of the heat treatment using the selected temperature correction table. The heat treatment apparatus according to claim 1, characterized by the above.

3. The heat treatment apparatus according to claim 2, wherein the temperature correction table is configured to show a correspondence between a region of the processing container and the temperature correction amount for each of a plurality of values of the accumulated film thickness. The heat treatment apparatus according to claim 2, characterized by the above.

4. The heat treatment apparatus according to any one of claims 1 to 3, wherein the number of cleaning treatments is configured to increase by performing a dry cleaning treatment and be initialized by performing a wet cleaning treatment. The heat treatment apparatus according to any one of claims 1 to 3, characterized by the above.

5. The heat treatment apparatus according to any one of claims 1 to 4, further comprising a stage configured to place the workpiece inside the processing container, and a heating unit configured to heat the stage based on a temperature according to the processing conditions and the temperature correction amount. The heat treatment apparatus according to any one of claims 1 to 4, further comprising a heating unit configured to heat the stage based on a temperature according to the processing conditions and the temperature correction amount. The heat treatment apparatus according to any one of claims 1 to 4, characterized by the above.

6. A control method for a heat treatment apparatus having a control device for heat-treating a workpiece housed in a processing container, wherein the control device controls the heat treatment according to processing conditions, specifies a value of an accumulated film thickness of deposits adhering to the processing container based on the heat treatment conditions, and corrects the temperature of the heat treatment based on the value of the accumulated film thickness of deposits adhering to the processing container and a temperature correction amount corresponding to the number of cleaning treatments of deposits adhering to the processing container by the heat treatment. A control method for a heat treatment apparatus having the above steps.

7. A control device for a heat treatment apparatus that heat-treats a workpiece housed in a processing container, a procedure for controlling the heat treatment according to processing conditions, a procedure for specifying a value of the cumulative film thickness of deposits adhering to the processing container by the heat treatment based on the heat treatment conditions, a procedure for correcting the temperature of the heat treatment based on the value of the cumulative film thickness of deposits adhering to the processing container and a temperature correction amount corresponding to the number of cleaning treatments of deposits adhering to the processing container by the heat treatment, a program for causing the above to be executed.

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