Soft magnetic multilayer deposition apparatus, manufacturing method, and magnetic multilayer

Abstract

To provide a technique for depositing efficient and well-controlled stacks of very thin layers of soft magnetic material. During operation, a substrate transporter (11) passes through processing stations (17A, 17B). One of the processing stations (17A) contains a sputtering target (T) made of a first soft magnetic material. A The second processing station (17B) has a first target (T A ) and a target (T) made of a second soft magnetic material different from the first soft magnetic material. A A control unit (23) that controls the relative movement of the substrate transporters (11) with respect to the processing stations (17A, 17B) provides a single rotational movement of the plurality of substrate transporters (11) of more than 360° around an axis AX of the circular interior space of the vacuum transport chamber (3), while the first and second processing stations (17A, 17B) operate continuously.

Description

Technical Field

[0001] There is a need for miniaturization of integrated inductance-based devices, such as transformers and inductive coils, that operate at very high frequencies up to several GHz.

Background Art

[0002] For example, it is known from Patent Document 1 to realize such a device by depositing a plurality of layers of different soft magnetic materials on a substrate.

[0003] The present invention starts from the recognition that by stacking very thin layers of at least two soft magnetic materials, the overall behavior of the layer stack improves the characteristics for high-frequency magnetic applications, thereby further reducing the size of the inductive microdevice on the substrate and also improving the high-frequency behavior.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] For industrial applications, a technique for depositing an efficient and well-controlled stack of very thin layers of soft magnetic materials should be made available.

Means for Solving the Problems

[0006] This is achieved by the soft magnetic material multilayer deposition apparatus according to the present invention. The soft magnetic material multilayer deposition apparatus includes a vacuum transport chamber with a circular internal space around the axis. Accordingly, the term "circular" is understood to include the polygonal approximation of each circle. As will be described later, the circular internal space can be formed in an annular shape or can be cylindrical. The axial extension with respect to the radial extension of the circular internal space may be large or small.

[0007] Along a plane perpendicular to the axis, in the internal space, a circular arrangement of a plurality of substrate transport devices is provided coaxially with the axis.

[0008] Along a plane perpendicular to the axis, a circular arrangement of a substrate processing station that performs a processing operation into the internal space is provided.

[0009] A rotation drive unit is further provided, which is operably coupled between the circular arrangement of the plurality of substrate transport devices and the circular arrangement of the processing station so as to establish a relative rotation between the circular arrangement of the plurality of substrate transport devices and the circular arrangement of the processing station.

[0010] The circular arrangement of the plurality of substrate transport devices and the circular arrangement of the processing station are arranged side by side with each other. These circular arrangements are arranged either along a common plane perpendicular to the axis or by arranging the two circular arrangements along circles with equal radii with respect to the axis.

[0011] Each substrate transport device is interpreted to accommodate a substrate such that, due to the relative rotation between the two circular arrangements being established by the rotation drive unit, one of each extended surface of the substrate processed by the device subsequently faces the station in the arrangement of the processing station.

[0012] Depending on the deposition of the laminate and specific techniques for its overall structure, the arrangement of the processing stations may include different layer deposition stations, for example, for reactive or non-reactive sputter deposition of conductive or dielectric materials, etching stations, etc.

[0013] Specifically, according to the present invention, the arrangement of the substrate processing stations comprises at least one first sputter deposition station and at least one second sputter deposition station, each with a single target.

[0014] The first sputter deposition station has a first target of a first soft magnetic material. Thus, the first soft magnetic material, which is deposited on the substrate as a very thin layer, is sputtered non-reactively from a solid single target. If the first target is of a mixed material, for example, two or more ferromagnetic elements, and / or contains one or more non-ferromagnetic elements, sputter deposition from the solid of the single target enables very precise control of the stoichiometry of the deposited first material and very precise control of the exact stability of its stoichiometry over time. Depending on the properties of this first soft magnetic material for sputtering, sputtering with a single or multiple frequencies of DC, pulsed DC including HIPIMS, or Rf is applied.

[0015] The second sputter deposition station has a target of a second soft magnetic material different from the first soft magnetic material.

[0016] It should be noted that in most common aspects, "different" may also mean having the same material composition but different stoichiometry.

[0017] A second soft magnetic material, which is deposited on the substrate as a very thin layer, is also sputtered non-reactively from a solid of a single target. When the second target is of a mixed material, such as two or more ferromagnetic elements, and / or contains one or more non-ferromagnetic elements, sputter deposition from a solid of a single target enables very precise control of the stoichiometry of the deposited second material and very precise control of the exact stability of that stoichiometry over time. Depending on the properties of this second soft magnetic material for sputtering, sputtering with a single or multiple frequencies of DC, pulsed DC including HIPIMS, or Rf is applied.

[0018] The apparatus further comprises a control unit operatively coupled to the station among the arrangements of the processing stations and the rotational drive unit. The control unit is interpreted to control the first sputter deposition station and the second sputter deposition station so as to enable continuous sputter deposition towards the substrate carrier device during at least one relative rotational movement of more than 360° of the circular arrangement of the plurality of substrate carrier devices with respect to the circular arrangement of the processing station around the axis, and the rotational movements are directly consecutive to each other.

[0019] Therefore, the sputter operations of at least the first sputter deposition station and the second sputter deposition station and the respective sputtering towards the arrangement of the plurality of substrate carrier devices are not hindered during a relative rotational movement of more than one time of the arrangement of the plurality of substrate carrier devices with respect to the arrangement of the processing station. Thereby, any transient state of the sputtering effect is avoided because it can be achieved by intermittently enabling and disabling sputter deposition.

[0020] In one embodiment of the apparatus according to the invention, the circular inner space is annular, and the arrangement of the plurality of substrate carrier devices or the arrangement of the processing stations is provided on the circular surface radially outside the annulus, or on the upper or lower surface of the annular inner space.

[0021] In one embodiment of the apparatus according to the present invention, the circular internal space is annular, and the arrangement of the plurality of substrate transfer devices or the arrangement of the processing stations is provided on the circular surface radially inside the annular internal space.

[0022] In one embodiment of the apparatus according to the present invention, the circular internal space is cylindrical, and the arrangement of the plurality of substrate transfer devices or the arrangement of the processing stations is provided on the circular surface that is the circumferential surface of the cylindrical internal space, or on the lower surface or the upper surface of the cylindrical internal space.

[0023] In one embodiment of the apparatus according to the present invention, the arrangement of the processing stations is stationary, and the arrangement of the plurality of substrate transfer devices is rotatable. Nevertheless, it is also possible to keep the arrangement of the plurality of substrate transfer devices stationary and rotate the arrangement of the processing stations.

[0024] In one embodiment of the apparatus according to the present invention, the first target contains or consists of one or more of the elements in the group of Fe, Ni, Co, and the second target contains or consists of one or more elements from the group of Fe, Ni, Co.

[0025] Note that the two target materials according to the present invention are different.

[0026] Therefore, when the two targets each consist of only one of the above elements, the targets are of different elements from the above group.

[0027] When they consist of two of the above elements each, they consist of different combinations from the above group, or consist of the same combination from the above group in different stoichiometries.

[0028] When they consist of all three elements of the above group, they are different with respect to stoichiometry.

[0029] In one embodiment of the device according to the present invention, the first target consists of one or more elements from the group of Fe, Ni, Co, and at least one non-ferromagnetic element, and / or the second target consists of one or more elements from the group of Fe, Ni, Co, and at least one non-ferromagnetic element.

[0030] Therefore, the difference in the materials of the first target and the second target can be based on the difference in one or more ferromagnetic elements described above, and / or the difference in one or more non-ferromagnetic elements, including differences positively based on different stoichiometries.

[0031] In one embodiment of the device according to the present invention, at least one of the non-ferromagnetic elements described above is at least one element from Group IIIA, Group IVB, and Group VB of the periodic table (according to Group 13, Group 4, and Group 5 of the IUAPC).

[0032] In one embodiment of the device according to the present invention, at least one of the non-ferromagnetic elements described above is at least one from the group of B, Ta, Zr.

[0033] In one embodiment of the device according to the present invention, the first target contains or consists of one or more elements from the group of Fe, Ni, Co, the second target contains or consists of one or more elements from the group of Fe, Ni, Co, and the device further includes at least one additional sputter deposition station adjacent to the first sputter deposition station and / or the second sputter deposition station and having a target of at least one non-ferromagnetic element.

[0034] In one embodiment of the above-described embodiment, at least one of the non-ferromagnetic elements of the target of the additional sputter deposition station is at least one element from Group IIIA, Group IVB, and Group VB of the periodic table (according to Group 13, Group 4, and Group 5 of the IUAPC).

[0035] In one embodiment of the above-described embodiment, at least one non-ferromagnetic element is at least one from the group of B, Ta, Zr.

[0036] During a relative rotational movement of more than 360° of the arrangement of a plurality of substrate transfer devices with respect to the arrangement of the processing stations around the above axis, the substrate is coated more than twice with very thin layers of at least a first soft magnetic material and a second soft magnetic material. When the arrangement of the substrate processing stations does not include an additional processing station, also called a sputtering station, between the first sputter deposition station and the second sputter deposition station, or when substrate processing by such an additional processing station is made impossible during the above rotational movement, the very thin layers of the first soft magnetic material and the second soft magnetic material are deposited directly one on top of the other.

[0037] Furthermore, when the arrangement of the processing stations does not include a further processing station that can be processed during the above rotational movement, a laminate of a layer of the first soft magnetic material and a layer of the second soft magnetic material is realized on the substrate. The number of very thin layers of the laminate is governed by the number of 360° relative rotational movements. Specifically, two or more first sputter deposition stations and two or more second sputter deposition stations may be provided in the arrangement of the processing stations, whereby three or more layers of the first soft magnetic material and the second soft magnetic material are deposited on the substrate directly one on top of the other, or separated by at least one very thin layer, per 360° rotational movement, and are deposited by at least one further layer deposition station in the arrangement of the processing stations and can also be deposited during a relative rotational movement of more than 360°.

[0038] Following immediately the deposition of one respective very thin layer of the above-described first ferromagnetic target material and / or second ferromagnetic target material per each rotation movement of more than 360°, a very thin layer of non-ferromagnetic material may be deposited by a further sputter deposition station that is enabled to deposit, such as the first sputter deposition station and the second sputter deposition station.

[0039] In one embodiment of the apparatus according to the present invention, the control unit is interpreted as controlling the rotation drive unit and, by extension, the relative rotation of the arrangement of the plurality of substrate handling devices with respect to the arrangement of the processing stations in a stepwise manner.

[0040] In one embodiment of the apparatus according to the present invention, the control unit is interpreted as controlling the rotation drive unit and, by extension, the relative rotation of the arrangement of the plurality of substrate handling devices with respect to the arrangement of the processing stations for continuous relative rotation at a constant angular velocity with respect to the axis, for at least a part of said one rotation movement of more than 360° that directly follows one another.

[0041] Thus, one of these relative rotation movements may be carried out at a first constant angular velocity and another at a different constant velocity. At least during one relative rotation movement of more than 360° that directly follows the arrangement of the plurality of substrate handling devices around the above axis, in combination with controlling the first sputter deposition station and the second sputter deposition station for continuous sputtering, depositions that are difficult to control in terms of transient behavior are avoided.

[0042] In one embodiment of the device according to the present invention, it is interpreted that the control unit controls the sputtering output of at least the first sputtering deposition station and the second sputtering deposition station depending on the exposure time for which each of the substrate transport devices is exposed to the first sputtering deposition station and the second sputtering deposition station, respectively, so that each of the first material and the second material layers of the respective desired thicknesses d1 and d2 is sputter-deposited by the first sputtering deposition station and the second sputtering deposition station, respectively.

[0043] In one embodiment of the above-described embodiment, the control unit 10 nm ≥ (d, d2) ≥ 0.1 nm is interpreted to perform control so as to be effective.

[0044] In one embodiment, the control unit 5 nm ≥ (d1, d2) ≥ 0.1 nm is interpreted to perform control so as to be effective.

[0045] In one embodiment, the control unit 1 nm ≥ (d1, d2) ≥ 0.1 nm is interpreted to perform control so as to be effective.

[0046] In one embodiment, the control unit 0.5 nm ≥ (d1, d2) ≥ 0.1 nm or 0.5 nm ≥ (d1, d2) ≥ 0.2 nm is interpreted to perform control so as to be effective.

[0047] In one embodiment, it is interpreted that the control unit performs control so that the thicknesses d1 and d2 are equal.

[0048] In one embodiment, it is interpreted that the control unit performs control so that d1 and d2 are 1 nm.

[0049] In one embodiment, the control unit is interpreted to perform control such that at least one of d1 and d2 is less than 1 nm.

[0050] In one embodiment, the control unit 0.1 nm ≤ (d1, d2) ≤ 3 nm, 0.3 nm ≤ (d1, d2) ≤ 2 nm, 0.5 nm ≤ (d1, d2) ≤ 1.5 nm is interpreted to perform control such that at least one of them becomes effective.

[0051] In one embodiment, the control unit is interpreted to perform control such that one of the first layer and the second layer is directly positioned on the other.

[0052] In one embodiment, the first sputtering station is configured to deposit FeCoB, and the second sputtering station is configured to deposit CoTaZr.

[0053] In one embodiment, the control unit is interpreted to perform control such that the substrate transfer device repeatedly passes through the first sputtering station and the second sputtering station a plurality of times.

[0054] In one embodiment of the apparatus according to the present invention, the arrangement of the processing stations includes at least one additional layer deposition station. The control unit is, on the one hand, interpreted to control the additional layer deposition station to deposit continuously during at least one rotational movement exceeding 360°. The control unit is further interpreted to control the material deposition rate of the additional layer deposition station depending on the exposure time for which each of the substrate transfer devices is exposed to the additional layer deposition station such that a layer of a desired thickness d3 is deposited by the additional layer deposition station. Thereby, in a preferred embodiment, the additional layer deposition station is a sputter deposition station for non-ferromagnetic materials or elements as described above.

[0055] In one embodiment of the apparatus according to the present invention, for a desired thickness d3, 10 nm ≥ (d3) ≥ 0.1 nm is interpreted as performing control so as to be effective.

[0056] Accordingly, in one embodiment, the control unit 5 nm ≥ d3 ≥ 2 nm is interpreted as performing control so as to be effective.

[0057] In one embodiment of the apparatus according to the present invention, the apparatus includes two or more first sputter deposition stations.

[0058] In one embodiment of the apparatus according to the present invention, the apparatus includes two or more second sputter deposition stations.

[0059] In one embodiment of the apparatus according to the present invention, the first sputter deposition station and the second sputter deposition station are a pair of adjacent stations along the internal space of the vacuum transport chamber.

[0060] In one embodiment of the apparatus according to the present invention, a plurality of the above-described pairs are provided, and the first sputter deposition stations and the second sputter deposition stations are arranged alternately.

[0061] In one embodiment of the apparatus according to the present invention, the first sputter deposition station and the second sputter deposition station are two stations among a group of three or more layer deposition stations, and the layer deposition stations in the group are provided adjacent to each other along the internal space, and the stations in the group are simultaneously activated for deposition under the control of the control unit.

[0062] Therefore, considering one direction of the relative rotation of the arrangement of a plurality of substrate transfer devices with respect to the arrangement of the processing stations, for example, one additional layer deposition station may be provided immediately before the first sputter deposition station and / or between the first sputter deposition station and the second sputter deposition station and / or immediately after the second sputter deposition station. All the station members of the group are simultaneously activated for deposition so as to be controlled by the control unit.

[0063] In one embodiment of the device according to the present invention, the device comprises two or more groups and / or comprises different groups.

[0064] Therefore, for example, a plurality of groups of three stations and / or groups with different numbers of stations and / or groups with different stations may be provided.

[0065] In one embodiment of the device according to the present invention, the arrangement of the substrate processing stations comprises at least one additional sputter deposition station that is interpreted as sputter depositing or directing sputter deposition of additional material onto the substrate or substrate holder.

[0066] In one embodiment of the device according to the present invention, the above material is a non-magnetic metal, a non-magnetic metal alloy, or a dielectric material.

[0067] Dielectric materials can be, for example, aluminum oxide, silicon oxide, tantalum oxide, silicon nitride, aluminum nitride, or their respective carbides, oxycarbides, nitrocarbides, etc.

[0068] In one embodiment of the device according to the invention, the control unit is interpreted as being able to make the processing of the substrate possible or impossible by means of selected ones or all of the said processing stations. The selected impossibility of a processing station among the arrangements of substrate processing stations including a first sputter deposition station and a second sputter deposition station may be applied, for example, for placing the substrate on the device and / or for removing the substrate from the device, thereby maintaining the overall processing of all substrates equally.

[0069] Making substrate processing possible and impossible by each station may be implemented by means of shutters that close or open the processing connection from the station to the substrate transport device and / or by switching on and off the power supply to each station. Using shutters avoids switching the transient behavior.

[0070] In one embodiment of the device according to the invention, the control unit is interpreted as controlling the rotary drive for continuous relative rotation at a constant angular velocity with respect to the axis for at least one of the said relative rotational movements of more than 360° that directly follow each other, and as reversing the direction of the rotational movement of the rotary drive. By reversing the relative rotation or the direction of the rotational movement of a plurality of substrate transport devices with respect to the arrangement of the processing stations, the layer deposition can be made uniform.

[0071] In one embodiment of the device according to the invention, at least one of the first sputter deposition station and the second sputter deposition station comprises a collimator downstream of each target. Such a collimator can result in a desired microstructure in a very thin layer that provides the desired magnetic properties.

[0072] In one embodiment of the device according to the invention, one of the first target and the second target is Fe x1 Co y1It is such that the arrangement of the processing stations includes a further sputtering station that is adjacent and consecutive to one sputtering station and has a boron target. The further sputtering station is controlled by a control unit so as to be capable of deposition during the same time as one sputtering station, and x1 + y1 = 100 and 20 < y1 < 50 are valid.

[0073] In one embodiment of the device according to the present invention, one of the first target and the second target is made of Co. The arrangement of the processing stations includes at least two further sputtering stations that are adjacent and consecutive to one sputtering station and have targets of Ta and Zr respectively. The further sputtering stations are controlled by a control unit so as to be capable of deposition during the same time as one sputtering station.

[0074] In one embodiment of the device according to the present invention, at least one of the first target and the second target is Fe x2 Co y2 B z2 or Co, where x2 + y2 + z2 = 100.

[0075] In one embodiment of the above-described embodiment, the arrangement of the processing stations includes at least one further layer deposition station that is interpreted as depositing a dielectric material layer.

[0076] In one embodiment of the device according to the present invention, at least one of the first target and the second target is Ni x3 Fe y3 or Co, where x3 + y3 = 100 and 50 < y3 < 60 or 17.5 < y3 < 22.5 are valid.

[0077] In one embodiment of the device according to the present invention, the first target is Fe x4 Co y4 or Co, and the second target is Ni x5 Fey5 It is such that x4 + y4 = 100, x5 + y5 = 100, 5 < y4 < 20, and 17.5 < y5 < 22.5 or 50 < y5 < 60 are valid.

[0078] In one embodiment of the device according to the present invention, the first target is Fe x6 Co y6 B z6 and consists of, and the second target is Co x7 Ta y7 Zr z7 and consists of, where x6 + y6 + z6 = 100 and x7 + y7 + z7 = 100.

[0079] In one embodiment of the above-described embodiment, x6 > y6 is valid.

[0080] In one embodiment of the device according to the present invention as described above, y6 ≥ z6 is valid.

[0081] In one embodiment of the device according to the present invention as described above, x7 > y7 is valid.

[0082] In one embodiment of the device according to the present invention as described above, y7 ≥ z7 is valid.

[0083] In one embodiment of the device according to the present invention as described above, 45 ≤ x6 ≤ 60, 50 ≤ x6 ≤ 55, x6 = 52, 20 ≤ y6 ≤ 40, 25 ≤ y6 ≤ 30, y6 = 28, 10 ≤ z6 ≤ 30, 15 ≤ z6 ≤ 25, z6 = 20 at least one or more of which are valid.

[0084] In one embodiment of the device according to the present invention as described above, 85 ≦ x7 ≦ 95, 90 ≦ x7 ≦ 93, x7 = 91.5, 3 ≦ y7 ≦ 6, 4 ≦ y7 ≦ 5, y7 = 4.5, 2 ≦ z7 ≦ 6, 3 ≦ z7 ≦ 5, z7 = 4 at least one or more of which are effective.

[0085] In one embodiment of the device according to the present invention, the control unit, with each of the first sputter deposition station and the second sputter deposition station, and if possible at least one further layer deposition station, for each substrate exposure thereto, 0.1 nm ≦ d ≦ 3 nm 0.3 nm ≦ d ≦ 2 nm 0.5 nm ≦ d ≦ 1.5 nm is interpreted to control the relative rotation and / or the output applied to at least the first target and the second target, and if possible the output applied to a further layer deposition station among the arrangements of the processing stations, so as to deposit a layer of respective thickness d for which at least one of the following is effective.

[0086] Two or more embodiments of the device according to the present invention as described above may be combined if they are not contradictory.

[0087] The present invention is further directed to a method for manufacturing a substrate with an induction device having a core, the core comprising a thin layer deposited by sputtering, at least a part of the thin layer being deposited using the device according to the present invention or by one or more of the above embodiments of this device.

[0088] The present invention is a method for manufacturing a substrate with a core for an induction device, the core comprising a thin layer deposited by sputtering, at least a part of the thin layer being deposited using the device according to the present invention or by one or more of the above-described embodiments of this device, and the method being further directed thereto.

[0089] The present invention is a soft magnetic multilayer laminate comprising a first layer of a first soft magnetic material and a second layer of a second soft magnetic material, the second soft magnetic material being different from the first soft magnetic material, the first layer each having a thickness d1, and the second layer each having a thickness d2, 5 nm ≥ (d1, d2) ≥ 0.1 nm being effective, and the soft magnetic multilayer laminate being further directed thereto.

[0090] Thereby, the thicknesses d1 and d2 may be different for each individual layer within the above ranges for d1 and d2.

[0091] In one embodiment of the soft magnetic multilayer laminate according to the present invention, 1 nm ≥ (d1, d2) ≥ 0.1 nm is effective.

[0092] In one embodiment of the soft magnetic multilayer laminate according to the present invention, 0.1 nm ≤ (d1, d2) ≤ 3 nm, 0.3 nm ≤ (d1, d2) ≤ 2 nm, 0.5 nm ≤ (d1, d2) ≤ 1.5 nm at least one of which is effective.

[0093] In one embodiment of the soft magnetic multilayer laminate according to the present invention, 0.5 nm ≥ (d1, d2) ≥ 0.1 nm or 0.5 nm ≥ (d1, d2) ≥ 0.2 nm is effective.

[0094] In one embodiment of the soft magnetic multilayer laminate according to the present invention, the thicknesses d1 and d2 are equal.

[0095] In one embodiment of the soft magnetic multilayer laminate according to the present invention, d1 and d2 are 1 nm.

[0096] In one embodiment of the soft magnetic multilayer laminate according to the present invention, at least one of d1 and d2 is less than 1 nm.

[0097] In one embodiment of the soft magnetic multilayer laminate according to the present invention, one of the first layer and the second layer is directly located on the other.

[0098] In one embodiment of the soft magnetic multilayer laminate according to the present invention, the first layer is made of FeCoB and the second layer is made of CoTaZr.

[0099] In one embodiment of the soft magnetic multilayer laminate according to the present invention, one of the first layer and the second layer is directly located on the other, and the laminate includes a plurality of first layers and second layers, and the plurality is covered by a layer of a non-magnetic material.

[0100] In one embodiment, the non-magnetic material is AlO2.

[0101] In one embodiment, the soft magnetic multilayer includes two or more of the above plurality, each accompanied by at least one layer of a non-magnetic material therebetween.

[0102] The present invention is · a plurality of FeCoB layers, · a plurality of CoTaZr layers and includes · the FeCoB layers are directly located on the CoTaZr layers in an alternating manner, and the common plurality of FeCoB layers and CoTaZr layers are further directed to a soft magnetic multilayer covered by a layer of AlO2.

[0103] In one embodiment of the soft magnetic multilayer laminate according to the present invention as described above, the FeCoB layer has a thickness d1, the CoTaZr layer has a thickness d2, and d1 and d2 are equal.

[0104] In one embodiment of the soft magnetic multilayer laminate according to the present invention as described above, 0.1 nm ≤ (d1, d2) ≤ 3 nm, 0.3 nm ≤ (d1, d2) ≤ 2 nm, 0.5 nm ≤ (d1, d2) ≤ 1.5 nm at least one of which is effective.

[0105] In one embodiment of the soft magnetic multilayer laminate according to the present invention as described above, d1 and d2 are less than 1 nm up to 0.2 nm.

[0106] The present invention is further directed to a core for an inductive device or an inductive device with a core, wherein the core comprises at least one soft magnetic bilayer according to the present invention or according to one or more embodiments of the present invention.

[0107] It should be noted that, where not contradictory, one or more of the embodiments of the magnetic bilayer according to the present invention can be combined with one or more of the respective embodiments.

[0108] Although the present invention will already be apparent to those skilled in the art from the foregoing description, the present invention is additionally illustrated herein with reference to the figures.

Brief Description of the Drawings

[0109]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

[0110] FIG. 1 shows the most schematic and simplified embodiment of a soft magnetic material multilayer deposition apparatus according to the present invention. The apparatus 1 includes a vacuum transport chamber 3 pumped by pumping means 5. The vacuum transport chamber 3 has a cylindrical inner space 7 that is cylindrical around the axis AX. Coaxial with the inner space 7 of the vacuum transport chamber 3, a cylindrical transport rotating device 9 is rotatably mounted in the inner space 7. Along a plane E that coincides with the plane of the figure of FIG. 1 and is perpendicular to the axis AX, an arrangement 16 of a plurality of substrate transport devices 11 evenly distributed along the periphery of the transport rotating device 9 is provided. Each of the substrate transport devices 11 is configured to receive and hold a substrate 13 at a predetermined position such that one of the extending surfaces 13 o of each substrate 13 faces the cylindrical surface 7 of the cylindrical inner space 7 in the embodiment of FIG. 1. c

[0111] According to the embodiment of FIG. 1, an arrangement 15 of substrate processing stations is provided along the cylindrical surface 7 of the inner space 7. In FIG. 1, two of these substrate processing stations are illustrated and indicated by reference numerals 17A and 17B. The substrate processing stations of the arrangement 15 face the path of the substrate transport device 11 so as to process the surface 13 c of the substrate 13 when it is to be processed. o

[0112] A rotation drive unit 19 is operably coupled to the transport rotating device 9 to rotate the transport rotating device 9 around the axis AX. Thereby, the arrangement 16 of the plurality of substrate transport devices 11 on which the substrates 13 are placed passes through the processing area of each processing station of the arrangement 15.

[0113] Thus, a relative rotation of the arrangement 16 of the plurality of substrate transport devices 11 with respect to the arrangement 15 of the processing stations is established.

[0114] The arrangement 15 of the processing stations includes a first sputter deposition station 17A and a second sputter deposition station 17B, or, even in the minimum configuration, consists of a first sputter deposition station 17A and a second sputter deposition station 17B. The first sputter deposition station 17A has a first sputtering target T made of a first soft magnetic material to be deposited as a layer material on the substrate 13 A which is indicated by M in FIG. 1 A The material M A can consist of one or more of the ferromagnetic elements Fe, Co, Ni, or may contain one or more of the non-ferromagnetic elements in addition to one or more of these elements. Such at least one non-ferromagnetic element can be one or more elements from groups IIIA, IVB, and VB of the periodic table (according to groups 13, 4, and 5 of the IUAPC), and thereby can be one or more elements from the group of B, Ta, Zr in particular.

[0115] The second sputter deposition station 17B is provided with a second target T made of a second soft magnetic material M different from the soft magnetic material M of the target T of the first sputtering station 17A to be deposited as a layer material on the substrate 13 A The material M A of the first target T B The second target T B The material M B can consist of one or more of the ferromagnetic elements Fe, Co, Ni, or may contain one or more of the non-ferromagnetic elements in addition to one or more of these elements. Such at least one non-ferromagnetic element can be one or more elements from groups IIIA, IVB, and VB of the periodic table (according to groups 13, 4, and 5 of the IUAPC), and thereby can be one or more elements from the group of B, Ta, Zr in particular.

[0116] Therefore, in these two sputtering stations 17A and 17B, non-reactive sputter deposition is carried out, and the materials to be deposited on the substrate 13 are solid materials of the respective targets T A , T B . Thereby, when M A and / or M B is a material of two or more elements, the stoichiometry over time and the constancy of the stoichiometry of the material to be deposited on the extending surface 13 o of the substrate 13 are accurately determined.

[0117] The sputtering stations 17A and 17B are electrically supplied by respective supply units 21A and 21B. Depending on the target materials M A and M B , the supply units 21A and 21B are DC, pulsed DC supply units including HIPIMS for electrical supply of single or multiple frequencies, or Rf supply units. To deposit both materials M A and M B , it is also possible to electrically bias the substrate transporter 11 among the arrangements 16 of the plurality of substrate transporters 11 either equally or selectively (not shown). In the embodiment of FIG. 1, this requires respective electrical connections from the bias supply source to the substrate transporter 11 via the transport rotator 9.

[0118] The apparatus 1 further comprises a control unit 23. The control unit 23, on the one hand, controls the rotational drive unit 19 and thus the relative rotational movement of the transport rotary device 9, and on the other hand, controls the enabling and disabling of the processing of the sputter deposition stations 17A and 17B. Thereby, the control unit 23 is interpreted as keeping the sputter deposition stations 17A and 17B enabled for sputter depositing the target material towards the substrate carrier device 11 and thus towards the substrate 13 during a relative rotational movement of more than 360° that directly follows the arrangement 16 of the plurality of substrate carrier devices 11 with respect to the arrangement 15 of the processing stations around the axis AX. The number of rotational movements during which the sputter deposition stations 17A and 17B are enabled depends on the number of thin layers of the material M A and M B to be deposited as a laminate on the extending surface 13o of the substrate 13. The relative rotational movement of more than 360° during which the sputter deposition stations 17A and 17B are enabled follows directly one after the other.

[0119] To place the substrate 13 onto and to remove it from the apparatus, for example via the two-direction mounting and fixing arrangement 25 as schematically shown in FIG. 1 and according to the embodiment of FIG. 1 onto the transport rotary device 9, the control unit 23 additionally controls the arrangement 15 of the processing stations including the sputter deposition stations 17A and 17B in order to selectively disable the respective processing of the substrate 13. This can be achieved either by disabling the respective power supply units, here denoted 21A and 21B, or by closing and opening respective shutters (not shown), thereby interrupting the substrate processing by the respective stations. This takes particular account of the fact that all substrates 13 processed by the apparatus 1 should be equally processed between being placed onto the apparatus and being removed from the apparatus.

[0120] In a preferred embodiment, in particular for the material M A and M BIn view of the purpose of depositing a very thin layer, according to FIG. 1, considering the step-by-step steps indicated by arrow Ω in FIG. 1, it is entirely possible to perform a relative rotational movement of the arrangement 16 of the plurality of substrate transport devices 11 around the axis AX in the transport rotation device 9. On the other hand, the control unit controls the rotation drive unit 19 for continuous relative rotation at a constant angular velocity with respect to the axis AX during at least a part of the relative rotational movement of more than 360° in one turn that directly follows each other. According to FIG. 1, such continuous and constant-speed relative rotation of the transport rotation device 9 avoids further transient states that may be caused by the stop and progress of the relative rotation. Avoiding the hardly controllable transient states for the sputter deposition of the very thin layer by the sputter deposition stations 17A and 17B improves the controllability of such deposition. This is also effective for the deposition of layers on the substrate by additional layer deposition stations provided if possible in the arrangement 15 of the substrate processing station.

[0121] When the transport rotation device 9 according to a preferred embodiment is controlled via the rotation drive unit 19 and the control unit 23 to rotate relatively at a constant relative angular velocity around the axis AX during at least a part of the relative rotational movement without interruption of more than 360° in one turn, the surface 13 of the substrate 13 o In particular, the thickness of each very thin layer deposited by the sputter deposition stations 17A and 17B is controlled by the output supplied by the supply units 21A and 21B to the respective sputtering stations 17A and 17B. In fact, it will be controlled by the respective deposition rates, that is, by the amount of material deposited per unit time. Therefore, the control unit 23, on the one hand, depends on the constant relative rotation speed of the arrangement 16 of the plurality of substrate transport devices 11 with respect to the arrangement 15 of the processing station, and on the other hand, on the material M A for the desired very small layer thickness d1, and the material M BIt is interpreted that the output sent to each of the sputter deposition stations 17A and 17B by each of the supply units 21A and 21B is controlled depending on the desired very small layer thickness d2 for

[0122] If the arrangement 15 of the processing stations includes further layer deposition stations that can be deposited during the same time as the first sputter deposition station 17A and the second sputter deposition station 17B, the same is implemented. The deposition rate of such a further station also depends on a constant relative rotation speed as described above, and on the other hand, depends on the desired very small layer thickness to be deposited by such a further layer deposition station, and is controlled by the control unit 23.

[0123] Each material M realized by the device as exemplified in FIG. 1 according to the present invention A and M B The thickness d including d1 and d2 of possible further materials is as described above, and is controlled by the control unit 23 for a constant relative rotation speed for a plurality of 360° rotational movements, and by the respective controls of the supply units 21A and 21B of FIG. 1 by the unit 23.

[0124] If the arrangement 16 of the plurality of substrate transport devices 11 as in the transport rotation device 9 of FIG. 1 is relatively rotated in a stepwise manner with respect to the arrangement 15 of the processing stations, the processing stations of the arrangement 15 including the sputter deposition stations 17A and 17B must be equally angularly spaced with respect to the mutual angular space of the substrate transport devices 11 in order to ensure that the substrate transport device 11 will be well aligned with one of the processing stations in each stepwise relative rotation.

[0125] When the relative rotation is driven by the rotation driving unit 19 and controlled by the control unit 23 for a constant relative angular velocity rotation, the angular intervals between the processing stations of the arrangement 15 do not need to be adapted to the mutual angular intervals of the substrate transport device 11, for example, along the transport rotation device 9.

[0126] When the relative rotation is controlled by the control unit 23 via the rotation driving unit 19 so as to be continuous for a relative rotational movement following more than two 360°, the uniformity of the overall laminate resulting in a very thin layer is improved, for example, as indicated by the dotted line at -Ω in FIG. 1, by reversing the direction of the relative rotational movement of the transport rotation device 9. Such a reversal may also be controlled by the control unit 23 after a desired number of thin layers have been deposited by the sputter deposition stations 17A and 17B.

[0127] According to FIG. 2, which still shows the vacuum transport chamber 3 in a simplified and most schematic manner, two or more pairs of sputter deposition stations 17A and 17B, such as those in FIG. 1, are provided and represented by 17A1, 17A2, 17B1, 17B2, etc., and each sputter deposition station 17A x has a respective target of the material M A and thus each of the sputter deposition stations 17B x has a target of the material M, as also described above in the context of FIG. 1. Nevertheless, two or more of the first and / or second sputter deposition stations may have respective targets of different soft magnetic materials. For example, station 17A1 may have a target of the soft magnetic material M B and station 17A2 may have a target of a different soft magnetic material M A1 etc., and similarly, a plurality of second sputtering stations 17B1, 17B2, etc. may also be provided. A2 and so on.

[0128] As further shown in FIG. 2, in one embodiment of the apparatus, a further layer deposition station 25 is provided as part of the arrangement 15 of the processing stations. This deposition station may not be deposition-activated, for example, during a relative rotational movement of more than 360° of the transport rotator 9 in one revolution. Using a control unit 23, which is no longer shown in FIG. 2, the further layer deposition chamber 25 can be deposition-activated, for example, by switching on the respective electrical supply and / or opening a shutter that prevents deposition on the substrate 13 (not shown in FIG. 2) during a selected period after completion of a predetermined number of such successive 360° relative rotational movements. By means of this deposition station 25, in a preferred embodiment, a thin layer of a dielectric material, such as aluminum oxide, silicon oxide, tantalum oxide, silicon nitride, aluminum nitride, and their respective carbides, or oxycarbides or nitrocarbides, etc., is deposited, for example, as the final layer in an unfinished stack of very thin layers of materials M A and M B and as an intermediate dielectric layer before further depositing a further portion of the stack of M A and M B after a first predetermined number of very thin layers of M A and M B have been deposited and before further depositing a further portion of the stack of M

[0129] In the embodiments of FIGS. 1 and 2, the sputter deposition stations 17A and 17B are adjacent to each other. However, in certain embodiments, at least one additional processing station, particularly at least one additional layer deposition station, particularly at least one additional sputter deposition chamber, is provided between the respective sputter deposition stations 17A and 17B. With such at least one additional layer deposition station, at least one non-ferromagnetic element as one or more elements from groups IIIA, IVB, and VB (according to groups 13, 4, and 5 of the IUAPC) of the periodic table, particularly boron, tantalum, and / or zirconium, can be deposited. When such at least one intermediate station is provided, the intermediate station may be operated continuously, like the sputter deposition stations 17A and 17B, or at selective intervals meaning only after a predetermined number of very thin layers of materials M A and M B have been deposited on the substrate 13.

[0130] FIG. 5 most schematically shows an example of a station arranged along a track path of a relative rotation Ω of the arrangement 16 of a plurality of substrate transport devices 11 (not shown in FIG. 5) with respect to the arrangement 15 of the processing stations. The first sputter deposition station has a target consisting of at least one of the elements Fe, Ni, Co.

[0131] The subsequent adjacent sputter deposition station 18a has a target of at least one of the elements B, Ta, Zr.

[0132] The second sputter deposition station 17B has a Co target. Subsequent adjacent sputter deposition stations 18b and 18c are attached and have Ta and Zr targets, respectively.

[0133] All stations 18a - 18c can be deposited simultaneously with stations 17A and 17B, for example.

[0134] To further improve the magnetic properties of the very thin layer, a collimator (not shown) may be provided between each target T A and T B and the rotating substrate transport device 11. Such a collimator may be provided in a further layer deposition station of the arrangement 15 of the processing station.

[0135] FIG. 3 shows an example of the operation of the device according to, for example, the embodiment of FIG. 1 or FIG. 2. From this figure, it can be seen that the cylindrical internal space 7 of the vacuum transport chamber 3 is also understood as being cylindrical in the sense that it is approximated by a polygon.

[0136] In cycle (a) according to FIG. 3, the layer deposition station 25 is made depositable, and all substrates 13 in the transport rotating device 9 are coated with a buffer layer of aluminum oxide with a thickness of 4 nm. The transport rotating device 9 is continuously rotated clockwise at a constant angular velocity. When the buffer layer of aluminum oxide is deposited on the substrate 13, the deposition station 25, such as an Rf sputter deposition chamber operating on an aluminum oxide material target, is made non-depositable. In cycle (b), the sputter deposition stations 17A and 17B are made possible for sputter deposition on the buffer layer on the substrate 13, and the transport rotating device 9 is still rotating clockwise at a constant angular velocity. By 40 consecutive rotational movements of 360°, 40 pairs of layers of material M A and material M B are deposited. Material M A is Fe x6 Co y6 B z6 and material M B is Co x7 Ta y7 Zr z7 with the values of the stoichiometric factors x6, y6, z6 and x7, y7, z7 as shown above.

[0137] Specifically, in one example, material M A is Fe 52 Co28 B 20 is, and the material M B is Co 91.5 Ta 4.5 Zr4. The sum of the thicknesses d1 and d2 is about 2 nm.

[0138] What is obtained is a laminate of very thin layers of the above M A and M B with a total thickness of about 80 nm. After depositing this laminate of layers with a thickness of about 80 nm, the deposition chamber 25 for aluminum oxide deposition is made depositable, and a thin layer of aluminum oxide with a thickness of about 4 nm is deposited on the laminate of 80 nm layers according to the period (c). Thereby, the rotational movement direction of the transport rotating device 9 is reversed counterclockwise. Subsequently, according to the period (d) of FIG. 3, the deposition chamber 25 is made non - depositable again, and sputter deposition of the sputter deposition stations 17A and 17B is made possible.

[0139] By the subsequent 40 consecutive 360° counterclockwise rotational movements of the transport rotating device 9, a laminate of 80 nm of very thin layers of the material M A and M B is deposited again.

[0140] Thereby, by reducing d1 and d2 of the layers deposited from the targets of the materials of the above M A and M B from, for example, 1 nm to 0.2 nm, the magnetic property H k of the laminate is improved from 35 Oe to less than about 0.1 Oe to about 0.2 Oe, which is almost up to 50 Oe while keeping the coercive force very small, that is, essential for a soft magnetic multilayer as required by an ultra - low loss RF passive device.

[0141] According to the period (e) and, if possible, subsequent further periods, the periods (a) - (c) can often be repeated as required.

[0142] The stoichiometric parameters and x n , y n, z n It should be noted that, in order to further optimize the soft magnetic behavior of the laminate resulting from a very thin soft magnetic material layer for very high frequency applications of 1 GHz or several GHz, it may be varied within the range as described above.

[0143] The substrate coated in the example according to FIG. 3 is a silicon substrate covered with a silicon oxide layer.

[0144] By the way, according to the embodiments of FIGS. 1 to 3, the substrate transport device 11 has an extending surface 13 with a normal that points radially outward with respect to the rotation axis AX and towards each of the positioned stations of arrangement 15 where the substrate supported thereon o is arranged along the periphery of the transport rotating device 9.

[0145] FIGS. 4(a) to 4(g) show the most schematic various mechanical concepts of the device according to the present invention in which a relative rotation of the arrangements 16 of a plurality of substrate transport devices 11 with respect to the arrangement 16 of the processing stations is established.

[0146] In the embodiment of FIG. 4a, the arrangement 15 of the processing stations is stationary. The arrangement 16 of the plurality of substrate transport devices 11 with the substrates 13 is rotatable, and the processed surface of the substrates 13 faces towards the stationary arrangement 15 of the processing stations, radially outward with respect to the axis AX.

[0147] In the embodiment of FIG. 4b, the arrangement 16 of the plurality of substrate transport devices 11 with the substrates 13 is stationary. The arrangement 15 of the processing stations is rotatable. The processed surface of the substrates 13 faces towards the rotatable arrangement 15 of the processing stations, radially inward with respect to the axis AX.

[0148] In the embodiment of FIG. 4c, the arrangement 15 of the processing stations is rotatable. The arrangement 16 of the plurality of substrate transport devices 11 with the substrates 13 is stationary, and the processed surface of the substrates 13 is directed radially outward with respect to the axis AX and faces towards the rotatable arrangement 15 of the processing stations.

[0149] In the embodiment of FIG. 4d, the arrangement 16 of the plurality of substrate transfer devices 11 with the substrate 13 is rotatable. The arrangement 15 of the processing stations is stationary. The surface of the substrate 13 to be processed faces inward with respect to the axis AX and faces the stationary arrangement 15 of the processing stations.

[0150] It should be noted that the stationary mounting in FIGS. 4a to 4d is schematically indicated by ST.

[0151] In the embodiment of FIG. 4e, the internal space 7 of the vacuum transfer chamber 3 is not cylindrical as in the embodiments of FIGS. 4a to 4d, but annular. The arrangement 15 of the processing stations is stationary or rotatable. The arrangements 16 of the plurality of substrate transfer devices 11 with the substrate 13 are each rotatable or stationary. The surface of the substrate 13 to be processed faces outward with respect to the axis AX and faces the arrangement 15 of the processing stations.

[0152] In the embodiment of FIG. 4f, the internal space 7 of the vacuum transfer chamber 3 is not cylindrical as in the embodiments of FIGS. 4a to 4d, but annular. The arrangement 15 of the processing stations is stationary or rotatable. The arrangements 16 of the plurality of substrate transfer devices 11 with the substrate 13 are each rotatable or stationary. The surface of the substrate 13 to be processed faces inward with respect to the axis AX and faces the arrangement 15 of the processing stations.

[0153] In the embodiment of FIG. 4g, the internal space 7 is cylindrical. The arrangement 15 of the processing stations is stationary or rotatable. The arrangements 16 of the plurality of substrate transfer devices 11 with the substrate 13 are each rotatable or stationary. The processing direction of the stations in the arrangement 15 of the processing stations is parallel to the axis AX. The surface of the substrate 13 to be processed is oriented parallel to the axis AX and faces the arrangement 15 of the processing stations.

[0154] As will be apparent to those skilled in the art, further mechanical combinations of the arrangement 16 of the plurality of substrate transfer devices 11 for the substrate 13 and the arrangement 15 of the processing stations are possible without departing from the scope of the present invention.

[0155] Nevertheless, all the explanations provided for the embodiments of FIGS. 1 to 3 and 5 are also implemented for the embodiment according to FIG. 4.

[0156] [Appended Claim 1] A soft magnetic material multilayer deposition apparatus, a vacuum transfer chamber with a circular internal space around an axis, a circular arrangement of a plurality of substrate transfer devices coaxial with the axis in the internal space along a plane perpendicular to the axis, a circular arrangement of a substrate processing station that performs a processing operation into the internal space along a plane perpendicular to the axis, a rotation drive unit operably coupled between the circular arrangement of the plurality of substrate transfer devices and the circular arrangement of the processing station so as to establish a relative rotation between the circular arrangement of the plurality of substrate transfer devices and the circular arrangement of the processing station comprising, the circular arrangement of the plurality of substrate transfer devices and the circular arrangement of the processing station are arranged side by side with each other, the arrangement of the substrate processing station, comprises at least one first sputter deposition station and at least one second sputter deposition station each with a single target, the first sputter deposition station has a first target of a first soft magnetic material deposited as a layer material on a substrate, the second sputter deposition station has a target of a second soft magnetic material different from the first soft magnetic material deposited as a layer material on the substrate, the apparatus, A control unit that is operably coupled to the station and the rotary drive unit among the arrangements of the processing stations, and that is interpreted to control the first sputter deposition station and the second sputter deposition station so as to enable continuous sputter deposition toward the substrate transfer device during at least one rotation movement of more than 360° of the arrangement of the plurality of substrate transfer devices with respect to the arrangement of the processing stations around the axis, wherein the 360° rotation movements directly follow each other, the soft magnetic material multilayer deposition apparatus further comprising the control unit. [Additional claim 2] The circular internal space is annular, and the arrangement of the plurality of substrate transfer devices or the arrangement of the processing stations is provided on the circular surface radially outside the annular internal space, or on the upper surface or the lower surface of the annular internal space, at least the soft magnetic material multilayer deposition apparatus according to claim 1. [Additional claim 3] The circular internal space is annular, and the arrangement of the plurality of substrate transfer devices or the arrangement of the processing stations is provided on the circular surface radially inside the annular internal space, at least the soft magnetic material multilayer deposition apparatus according to claim 1. [Additional claim 4] The circular internal space is cylindrical, and the arrangement of the plurality of substrate transfer devices or the arrangement of the processing stations is provided on the circular surface that is the circumferential surface of the cylindrical internal space, or on the lower surface or the upper surface of the cylindrical internal space, at least the soft magnetic material multilayer deposition apparatus according to claim 1. [Additional claim 5] The arrangement of the processing stations is stationary, and the arrangement of the plurality of substrate transfer devices is rotatable, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 4. [Additional claim 6] The first target contains or consists of one or more elements from the group of Fe, Ni, Co, and the second target contains or consists of one or more elements of the group of Fe, Ni, Co, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 5. [Additional claim 7] The first target consists of one or more elements from the group of Fe, Ni, Co and at least one non-ferromagnetic element, and / or the second target consists of one or more elements from the group of Fe, Ni, Co and at least one non-ferromagnetic element, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 6. [Additional Claim 8] The at least one non-ferromagnetic element is at least one element from Group IIIA, Group IVB, and Group VB of the periodic table (according to Groups 13, 4, and 5 of the IUAPC), the soft magnetic material multilayer deposition apparatus according to at least claim 7. [Additional Claim 9] The first target contains or consists of one or more elements from the group of Fe, Ni, Co, the second target contains or consists of one or more elements from the group of Fe, Ni, Co, and the apparatus further comprises at least one additional sputter deposition station adjacent to the first sputter deposition station and / or the second sputter deposition station and having a target of at least one non-ferromagnetic element, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 8. [Additional Claim 10] The at least one non-ferromagnetic element is at least one element from Group IIIA, Group IVB, and Group VB of the periodic table (according to Groups 13, 4, and 5 of the IUAPC), the soft magnetic material multilayer deposition apparatus according to at least claim 9. [Additional Claim 11] The at least one non-ferromagnetic element is at least one from the group of B, Ta, Zr, the soft magnetic material multilayer deposition apparatus according to at least claim 8 or 10. [Additional Claim 12] The control unit is interpreted to control the rotational drive unit in a stepwise manner, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 11. [Additional Claim 13] The control unit is interpreted to control the rotation drive unit for continuous relative rotation at a constant angular velocity with respect to the axis for at least a part of the at least one rotational movement exceeding 360° that directly follows each other, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 12. [Additional Claim 14] The control unit is interpreted to control the sputtering output of at least the first sputter deposition station and the second sputter deposition station depending on the exposure time for which each of the substrate transport devices is exposed to the first sputter deposition station and the second sputter deposition station, respectively, so that each of the first sputter deposition station and the second sputter deposition station sputter deposits layers of the first material and the second material having respective desired thicknesses d1, d2, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 13. [Additional Claim 15] 10 nm ≥ (d1, d2) ≥ 0.1 nm The soft magnetic material multilayer deposition apparatus according to claim 14, which is controlled to be effective. [Additional Claim 16] 5 nm ≥ (d1, d2) ≥ 0.1 nm The soft magnetic material multilayer deposition apparatus according to claim 14 or 15, which is controlled to be effective. [Additional Claim 17] 1 nm ≥ (d1, d2) ≥ 0.1 nm The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 16, which is controlled to be effective. [Additional Claim 18] 0.5 nm ≥ (d1, d2) ≥ 0.1 nm, or 0.5 nm ≥ (d1, d2) ≥ 0.2 nm The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 17, which is controlled to be effective. [Additional Claim 19] The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 18, wherein the thicknesses d1 and d2 are controlled to be equal. [Additional item 20] The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 19, wherein d1 and d2 are controlled to be 1 nm. [Additional item 21] The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 20, wherein at least one of d1 and d2 is controlled to be less than 1 nm. [Additional item 22] 0.1 nm ≤ (d1, d2) ≤ 3 nm 0.3 nm ≤ (d1, d2) ≤ 2 nm 0.5 nm ≤ (d1, d2) ≤ 1.5 nm The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 21, wherein at least one of the following is controlled to be effective. [Additional item 23] The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 21, wherein the first layer and the second layer are controlled to be directly located one above the other. [Additional item 24] The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 23, wherein the first sputtering station is configured to deposit FeCoB, and the second sputtering station is configured to deposit CoTaZr. [Additional item 25] The soft magnetic material multilayer deposition apparatus according to at least one of claims 14 to 24, wherein the substrate transfer device is controlled to repeatedly pass through the first sputtering station and the second sputtering station a plurality of times. [Additional item 26] The arrangement of the processing stations includes at least one additional layer deposition station, and the control unit is construed to control the additional layer deposition station to perform deposition continuously during at least the rotational movement exceeding 360° once. The control unit is further construed to control the material deposition rate of the additional layer deposition station depending on the exposure time during which each of the substrate transfer devices is exposed to the additional layer deposition station in order to deposit a layer of a desired thickness d3. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 25. [Additional claim 27] Regarding the desired thickness d3, 10 nm ≥ (d3) ≥ 0.1 nm is controlled to be effective. The soft magnetic material multilayer deposition apparatus according to claim 26. [Additional claim 28] Regarding d3, 5 nm ≥ d3 ≥ 2 nm is controlled to be effective. The soft magnetic material multilayer deposition apparatus according to at least claim 27. [Additional claim 29] Comprising two or more of the first sputter deposition stations. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 28. [Additional claim 30] Comprising two or more of the second sputter deposition stations. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 29. [Additional claim 31] The first sputter deposition station and the second sputter deposition station are a pair of stations adjacent to each other along the internal space. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 30. [Additional claim 32] Comprising a plurality of the pairs, and the first sputter deposition station and the second sputter deposition station are arranged alternately. The soft magnetic material multilayer deposition apparatus according to at least claim 31. [Additional claim 33] The first sputter deposition station and the second sputter deposition station are two stations among a group of three or more layer deposition stations, and among the group, the layer deposition stations are provided adjacent to each other along the internal space, and the stations among the group are simultaneously activated for deposition under the control of the control unit. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 32. [Appended Claim 34] The soft magnetic material multilayer deposition apparatus according to at least claim 33, comprising two or more of said groups and / or different said groups. [Appended Claim 35] The arrangement of the substrate processing stations comprises at least one additional sputter deposition station that is interpreted as sputter depositing an additional material towards the substrate holder. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 34. [Appended Claim 36] The additional material is a non-magnetic metal, a metal alloy, or a dielectric material. The soft magnetic material multilayer deposition apparatus according to at least claim 35. [Appended Claim 37] The control unit is interpreted as being able to control or disable the processing of the substrate by a selected one or all of the stations among the arrangements of the processing stations. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 36. [Appended Claim 38] The control unit controls the rotary drive unit for continuous relative rotation at a constant angular velocity with respect to the axis for at least one of the relative rotational movements of more than 360° that directly follow each other, and further reverses the direction of relative rotation of the rotary drive unit. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 37. [Appended Claim 39] At least one of the first sputter deposition chamber and the second sputter deposition chamber is provided with a collimator downstream of each of the targets. The soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 38. [Additional item 40] One of the first target and the second target is Fe x1 Co y1 and the arrangement of the processing stations includes a further sputtering station adjacent to and following the one sputtering station and having a boron target, the further sputtering station being controlled by the control unit so as to be depositable during the same time as the one sputtering station, and x1 + y1 = 100 and 20 < y1 < 50 being valid, the soft magnetic material multi-layer deposition apparatus according to at least one of claims 1 to 39. [Additional item 41] One of the first target and the second target is Co, and the arrangement of the processing stations includes at least two further sputtering stations adjacent to the one sputtering station and each having a Ta and a Zr target, the further sputtering stations being controlled by the control unit so as to be depositable during the same time as the one sputtering station, the soft magnetic material multi-layer deposition apparatus according to at least one of claims 1 to 40. [Additional item 42] At least one of the first target and the second target is Fe x2 Co y2 B z2 and here, x2 + y2 + z2 = 100, the soft magnetic material multi-layer deposition apparatus according to at least one of claims 1 to 41. [Additional item 43] The arrangement of the processing stations includes at least one further layer deposition station that is interpreted as depositing a dielectric material layer, the soft magnetic material multi-layer deposition apparatus according to at least claim 42. [Additional item 44] At least one of the first target and the second target is Ni x3 Fe y3It is of the kind where x3 + y3 = 100 and 50 < y3 < 60 or 17.5 < y3 < 22.5 is valid, a soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 43. [Additional Claim 45] The first target is Fe x4 Co y4 It is of the kind where the second target is Ni x5 Fe y5 It is of the kind where x4 + y4 = 100, x5 + y5 = 100, 5 < y4 < 20, and 17.5 < y5 < 22.5 or 50 < y5 < 60 is valid, a soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 43. [Additional Claim 46] The first target is Fe x6 Co y6 B z6 It is of the kind where the second target is Co x7 Ta y7 Zr z7 It is of the kind where here, x6 + y6 + z6 = 100 and x7 + y7 + z7 = 100, a soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 43. [Additional Claim 47] x6 > y6 is valid, a soft magnetic material multilayer deposition apparatus according to at least claim 46. [Additional Claim 48] y6 ≧ z6 is valid, a soft magnetic material multilayer deposition apparatus according to at least claim 46 or 47. [Additional Claim 49] x7 > y7 is valid, a soft magnetic material multilayer deposition apparatus according to at least one of claims 46 to 48. [Additional Claim 50] y7 ≧ z7 is valid, a soft magnetic material multilayer deposition apparatus according to at least one of claims 46 to 49. [Additional Claim 51] 45 ≦ x6 ≦ 60, 50 ≦ x6 ≦ 55, x6 = 52, 20 ≦ y6 ≦ 40, 25 ≦ y6 ≦ 30, y6 = 28, 10 ≦ z6 ≦ 30, 15 ≦ z6 ≦ 25, z6 = 20 At least one or more of the above is effective, the soft magnetic material multilayer deposition apparatus according to at least one of claims 46 to 50. [Additional claim 52] 85 ≦ x7 ≦ 95, 90 ≦ x7 ≦ 93, x7 = 91.5, 3 ≦ y7 ≦ 6, 4 ≦ y7 ≦ 5, y7 = 4.5, 2 ≦ z7 ≦ 6, 3 ≦ z7 ≦ 5, z7 = 4 At least one or more of the above is effective, the soft magnetic material multilayer deposition apparatus according to at least one of claims 46 to 51. [Additional claim 53] The control unit is provided by each of the first sputter deposition station and the second sputter deposition station, and if possible, at least one additional layer deposition station, for the substrate exposure thereto, 0.1 nm ≦ d ≦ 3 nm 0.3 nm ≦ d ≦ 2 nm 0.5 nm ≦ d ≦ 1.5 nm At least one of which is effective to deposit a layer of thickness d, the relative rotation, and / or at least the output applied to the first target and the second target, and if possible the output applied to the additional layer deposition station among the arrangements of the processing stations, is interpreted to control, the soft magnetic material multilayer deposition apparatus according to at least one of claims 1 to 52. [Additional claim 54] A method for manufacturing a substrate with an induction device having a core, wherein the core comprises a thin layer deposited by sputtering, and at least a part of the thin layer is deposited using the apparatus according to at least one of claims 1 to 53. [Additional claim 55] A method of manufacturing a substrate with a core for an induction device, wherein the core comprises a thin layer deposited by sputtering, and at least a part of the thin layer is deposited using the device according to at least one of claims 1 to 53. [Additional claim 56] A soft magnetic multilayer laminate comprising a first layer of a first soft magnetic material and a second layer of a second soft magnetic material, wherein the second soft magnetic material is different from the first soft magnetic material, the first layer each has a thickness d1, and the second layer each has a thickness d2, 5nm ≥ (d1, d2) ≥ 0.1nm which is effective, soft magnetic multilayer laminate. [Additional claim 57] 1nm ≥ (d1, d2) ≥ 0.1nm which is effective, the soft magnetic multilayer laminate according to claim 56. [Additional claim 58] 0.1nm ≤ (d1, d2) ≤ 3nm, 0.3nm ≤ (d1, d2) ≤ 2nm, 0.5nm ≤ (d1, d2) ≤ 1.5nm at least one of which is effective, the soft magnetic multilayer laminate according to claim 56 or 57. [Additional claim 59] 0.5nm ≥ (d1, d2) ≥ 0.1nm or 0.5nm ≥ (d1, d2) ≥ 0.2nm which is effective, the soft magnetic multilayer laminate according to at least one of claims 56 to 58. [Additional claim 60] The thicknesses d1 and d2 are equal, the soft magnetic multilayer laminate according to at least one of claims 56 to 59. [Additional claim 61] d1 and d2 are 1nm, the soft magnetic multilayer laminate according to at least one of claims 56 to 60. [Additional claim 62] At least one of d1 and d2 is less than 1nm, the soft magnetic multilayer laminate according to at least one of claims 56 to 61. [Additional claim 63] The soft magnetic multilayer laminate according to at least one of claims 56 to 62, wherein one of the first layer and the second layer is directly located on the other. [Additional claim 64] The soft magnetic multilayer laminate according to at least one of claims 56 to 63, wherein the first layer is made of FeCoB and the second layer is made of CoTaZr. [Additional claim 65] The soft magnetic multilayer laminate according to at least one of claims 56 to 64, wherein one of the first layer and the second layer is directly located on the other, the laminate includes a plurality of the first layers and the second layers, and the plurality is covered by a layer of a non-ferromagnetic material. [Additional claim 66] The soft magnetic multilayer laminate according to claim 65, wherein the non-ferromagnetic material is AlO2. [Additional claim 67] The soft magnetic multilayer laminate according to at least claim 65 or 66, including two or more of the plurality and each layer of the non-ferromagnetic material. [Additional claim 68] A plurality of FeCoB layers, A plurality of CoTaZr layers and comprising, The layer of FeCoB is directly located on the layer of CoTaZr in an alternating manner, The common plurality of FeCoB layers and CoTaZr layers are covered by a layer of AlO2, a soft magnetic multilayer laminate. [Additional claim 69] The layer of FeCoB has a thickness d1, the layer of CoTaZr has a thickness d2, and d1 and d2 are equal. The soft magnetic multilayer laminate according to claim 68. [Additional claim 70] 0.1 nm ≤ (d1, d2) ≤ 3 nm, 0.3 nm ≤ (d1, d2) ≤ 2 nm, 0.5 nm ≤ (d1, d2) ≤ 1.5 nm At least one of which is effective. The soft magnetic multilayer laminate according to claim 68 or 69. [Additional claim 71] The soft magnetic multilayer laminate according to any one of claims 68 to 70, wherein d1 and d2 are less than 1 nm up to 0.2 nm. [Additional Claim 72] A core or an inductive device for an inductive device with a core comprising at least one soft magnetic multilayer laminate according to at least one of claims 56 to 71.

Explanation of Reference Signs

[0157] 1 device, 3 vacuum transport chamber, 5 pump means, 7 cylindrical internal space, 7 c Cylindrical surface, 9 transport rotating device, 11 substrate transport device, 13 substrate, 13 o Extending surface, 15 arrangement of substrate processing stations, 16 arrangement of substrate transport devices, 17A first sputter deposition station, 17B second sputter deposition station, 17A1, 17A2, 17B1, 17B2, 17A x , 18a, 18b, 18c sputter deposition stations, 19 rotation drive unit, 21A, 21B supply units, 23 control unit, 25 mounted fixed arrangement, further layer deposition station, further layer deposition chamber, AX axis, E plane, M A , M A1 , M A2 First target material, soft magnetic material, M B Target material, second soft magnetic material, ST stationary mounting, T A First sputtering target, T B Second target, Ω relative rotation

Claims

1. A soft magnetic material multi-layer deposition apparatus, comprising: a circular continuous internal space of a vacuum transport chamber around an axis; a plurality of substrate transport devices coaxial with the axis in the circular continuous internal space along a first plane perpendicular to the axis, each of the substrate transport devices comprising a substrate transport device for transporting a substrate, arranged in a circular pattern; a circular arrangement of substrate processing stations along a second plane perpendicular to the axis, wherein the substrate processing stations in the arrangement operate in a common manner in the circular continuous internal space; a rotary drive unit operably coupled between the circular arrangement comprising the plurality of substrate transport devices and the circular arrangement of the processing stations to establish relative rotation therebetween; and the circular arrangement comprising the plurality of substrate transport devices and the circular arrangement of the processing stations are mutually aligned; the arrangement of the substrate processing stations comprises at least one first sputter deposition station and at least one second sputter deposition station each associated with a single target; the first sputter deposition station has a first target of a first soft magnetic material to be deposited as a layer material on a substrate; the second sputter deposition station has a target of a second soft magnetic material different from the first soft magnetic material to be deposited as a layer material on the substrate; the apparatus further comprises a control unit operably coupled to the stations in the arrangement of the processing stations and the rotary drive unit, configured to control at least one of the at least one first sputter deposition station and at least one of the at least one second sputter deposition station to enable uninterrupted sputter deposition onto and towards the circular arrangement comprising the plurality of substrate transport devices during at least more than one 360° rotational movement of the circular arrangement comprising the plurality of substrate transport devices relative to the circular arrangement of the processing stations around the axis, the 360° rotational movements following directly after each other. The control unit is configured to control the processing station such that during rotation of more than 1 and up to 360° in which at least one of the first sputtering deposition stations and at least one of the second sputtering deposition stations are enabled for continuous sputtering deposition toward and onto the circular arrangement including a plurality of the substrate transfer devices, at least one of the first sputtering deposition stations and at least one of the second sputtering deposition stations operate as adjacent deposition stations, Thereby, a soft magnetic material multi-layer deposition apparatus that deposits the layer of the first soft magnetic material and the layer of the second soft magnetic material so as to be directly on top of each other during rotation of more than 1. **Claim 2** The circular continuous internal space is annular, and the arrangement or the arrangement of the processing station including the plurality of substrate transfer devices is provided on a circular surface on the radially outer side or a circular surface on the radially inner side of the annular internal space, or on an upper surface defining the upper side of the internal space or a lower surface defining the lower side of the internal space of the annular internal space. The soft magnetic material multi-layer deposition apparatus according to claim 1. **Claim 3** The circular internal space is cylindrical, and the circular arrangement or the arrangement of the processing station including the plurality of substrate transfer devices is provided on a circular surface that is the circumferential surface of the cylindrical internal space, or on the lower surface or the upper surface of the cylindrical internal space. The soft magnetic material multi-layer deposition apparatus according to claim 1. **Claim 4** The circular arrangement of the processing station is stationary, and the circular arrangement including the plurality of substrate transfer devices is rotatable. The soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 3. **Claim 5** The first target of at least one of the first sputtering deposition stations includes or consists of one or more elements from the group of Fe, Ni, Co, and the second target includes or consists of one or more elements of the group of Fe, Ni, Co. The soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 4. **Claim 6** The first target of at least one of the sputter deposition stations consists of one or more elements from the group of Fe, Ni, Co and at least one non-ferromagnetic element, and / or the second target of at least one of the sputter deposition stations consists of one or more elements from the group of Fe, Ni, Co and at least one non-ferromagnetic element. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 5.

7. The at least one non-ferromagnetic element is at least one element from groups IIIA, IVB, and VB of the periodic table (according to groups 13, 4, and 5 of IUPAC). The soft magnetic material multilayer deposition apparatus according to claim 6.

8. The first target of at least one of the sputter deposition stations contains or consists of one or more elements from the group of Fe, Ni, Co, and the second target of at least one of the sputter deposition stations contains or consists of one or more elements from the group of Fe, Ni, Co. The apparatus further comprises at least one additional sputter deposition station adjacent to at least one of the first sputter deposition stations and / or at least one of the second sputter deposition stations and having a target of at least one non-ferromagnetic element. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 7.

9. The at least one non-ferromagnetic element is at least one element from groups IIIA, IVB, and VB of the periodic table (according to groups 13, 4, and 5 of IUPAC). The soft magnetic material multilayer deposition apparatus according to claim 8.

10. The at least one non-ferromagnetic element is at least one from the group of B, Ta, Zr. The soft magnetic material multilayer deposition apparatus according to claim 7 or 9.

11. The control unit is - for at least a part of the at least one rotational movement exceeding 360° that directly follows each other, for continuous relative rotation at a constant angular velocity with respect to the axis, - in a stepwise manner, - so as to reverse the direction of relative rotation of the rotational drive unit, configured to control the rotational drive unit in at least one of the aspects. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 10.

12. The control unit is configured to control the sputtering output of at least one of the first sputtering deposition station and at least one of the second sputtering deposition station such that each of the substrate transfer devices is exposed to at least one of the first sputtering deposition station and at least one of the second sputtering deposition station depending on the exposure time for sputter depositing layers of the first material and the second material having respective desired thicknesses d1 and d2, respectively, by each of the first sputtering deposition station and the second sputtering deposition station. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 11.

13. 10 nm ≥ (d1, d2) ≥ 0.1 nm, 5 nm ≥ (d1, d2) ≥ 0.1 nm, 1 nm ≥ (d1, d2) ≥ 0.1 nm, 0.5 nm ≥ (d1, d2) ≥ 0.1 nm, 0.5 nm ≥ (d1, d2) ≥ 0.2 nm At least one of d1 and d2 is less than 1 nm, d1 and d2 are equal, At least one of d1 and d2 is less than 1 nm, 0.1 nm ≤ (d1, d2) ≤ 3 nm, 0.3 nm ≤ (d1, d2) ≤ 2 nm, 0.5 nm ≤ (d1, d2) ≤ 1.5 nm, and d1 and d2 are 1 nm, The soft magnetic material multilayer deposition apparatus according to claim 12, wherein at least one of them is controlled to be effective.

14. At least one of the first sputtering deposition stations is configured to deposit FeCoB, and at least one of the second sputtering deposition stations is configured to deposit CoTaZr. The soft magnetic material multilayer deposition apparatus according to claim 12 or 13.

15. The substrate transfer device is controlled to repeatedly pass through the first sputtering station and the second sputtering station a plurality of times. The soft magnetic material multilayer deposition apparatus according to any one of claims 12 to 14.

16. The arrangement of the processing stations comprises at least one further layer deposition station, and the control unit is configured to control the further layer deposition station so as to perform deposition continuously during at least said rotational movement exceeding 360° once. The control unit is further configured to control the material deposition rate of the further layer deposition station depending on the exposure time during which each of the substrate transport devices is exposed to the further layer deposition station in order to deposit a layer of a desired thickness d3 by the further layer deposition station. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 15.

17. For the desired thickness d3, 10 nm ≥ (d3) ≥ 0.1 nm, and 5 nm ≥ d3 ≥ 2 nm The soft magnetic material multilayer deposition apparatus according to claim 16, which is controlled such that at least one of them is effective.

18. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 17, comprising more than one of the at least one first sputter deposition station and / or more than one of the at least one second sputter deposition station.

19. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 18, wherein at least one of the at least one first sputter deposition station and at least one of the at least one second sputter deposition station are a pair of stations adjacent to each other along the circular internal space.

20. The soft magnetic material multilayer deposition apparatus according to claim 19, comprising a plurality of said pairs, and at least one of the at least one first sputter deposition station and at least one of the at least one second sputter deposition station are arranged alternately.

21. At least one of the at least one first sputter deposition station and at least one of the at least one second sputter deposition station are stations of a group comprising a further layer deposition station. The layer deposition stations in the group are provided adjacent to each other along the circular continuous internal space, and the layer deposition stations in the group are simultaneously activated for deposition under the control of the control unit. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 20.

22. The soft magnetic material multi-layer deposition apparatus according to claim 21, comprising two or more of said groups and / or different said groups.

23. The soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 22, wherein the arrangement of the substrate processing stations comprises at least one further sputter deposition station configured to sputter deposit additional material towards the substrate transport apparatus.

24. The soft magnetic material multi-layer deposition apparatus according to claim 23, wherein the additional material is a non-magnetic metal, a metal alloy, or a dielectric material.

25. The additional material is Al ２ O ３ The soft-magnetic material multilayer deposition apparatus according to claim 24, wherein the additional material is Al ２ O ３ .

26. The soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 25, wherein the control unit is configured to control the processing of the substrates in the plurality of substrate transport apparatuses by the selected or all of the processing stations in the arrangement of the processing stations to enable or disable the processing.

27. The soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 26, wherein at least one of at least one of said first sputter deposition stations and at least one of said second sputter deposition stations comprises a collimator downstream of each respective target.

28. One of the first target in at least one of the first sputter deposition stations and the second target in at least one of the second sputter deposition stations is Fe ｘ１ Co ｙ１ and the arrangement of the processing stations includes a further sputtering station adjacent to and following the one sputtering station and having a boron target, with x1 + y1 = 100 and 20 < y1 < 50 being valid, a soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 27.

29. At least one of the first target of the at least one first sputter deposition station and the second target of the at least one second sputter deposition station is Fe ｘ２ Co ｙ２ B ｚ２ where x2 + y2 + z2 = 100, the soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 28.

30. The soft magnetic material multi-layer deposition apparatus according to claim 29, wherein the arrangement of the processing stations comprises at least one further layer deposition station configured to deposit a dielectric material layer.

31. At least one of the first target of the at least one first sputter deposition station and the second target of the at least one second sputter deposition station is Ni ｘ３ Fe ｙ３ wherein x3 + y3 = 100, and 50 < y3 < 60 or 17.5 < y3 < 22.5 is valid, the soft magnetic material multi-layer deposition apparatus according to any one of claims 1 to 30.

32. The first target of at least one of the first sputter deposition stations is Fe ｘ４ Co ｙ４ and the second target of at least one of the second sputter deposition stations is Ni ｘ５ Fe ｙ５ The soft magnetic material multilayer deposition apparatus according to claim 1, wherein x4 + y4 = 100, x5 + y5 = 100, 5 < y4 < 20, and 17.5 < y5 < 22.5 or 50 < y5 < 60 are valid.

33. The first target of the at least one first sputter deposition station is Fe ｘ６ Co ｙ６ B ｚ６ and the second target of the at least one second sputter deposition station is Co ｘ７ Ta ｙ７ Zr ｚ７ The soft magnetic material multi-layer deposition apparatus according to claim 1, where x6 + y6 + z6 = 100 and x7 + y7 + z7 = 100

34. x6 > y6 45 ≤ x6 ≤ 60, 50 ≤ x6 ≤ 55, x6 = 52, y6 ≥ z6 20 ≤ y6 ≤ 40, 25 ≤ y6 ≤ 30, y6 = 28, x7 > y7, 85 ≤ x7 ≤ 95, 90 ≤ x7 ≤ 93, x7 = 91.5, 3 ≤ y7 ≤ 6, 4 ≤ y7 ≤ 5, y7 = 4.5, 10 ≤ z6 ≤ 30, 15 ≤ z6 ≤ 25, z6 = 20 2 ≤ z7 ≤ 6, 3 ≤ z7 ≤ 5, z7 = 4, At least one of which is effective, the soft magnetic material multi-layer deposition apparatus according to claim 33.

35. The control unit, for each of at least one of said first sputter deposition stations and at least one of said second sputter deposition stations, and if possible at least one further layer deposition station, for substrate exposure thereto, 0.1 nm ≤ d ≤ 3 nm 0.3 nm ≤ d ≤ 2 nm 0.5 nm ≤ d ≤ 1.5 nm configured to control the relative rotation so as to deposit at least one layer of thickness d, each of which is effective, and / or the output applied to at least the first target and the second target and, if possible, the output applied to a further layer deposition station of the arrangement of the processing station, a soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 34.

36. The soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 35, wherein the first plane is the same plane as the second plane.

37. During a plurality of said 360° rotations, the circular arrangement comprising a plurality of said substrate transfer devices is controlled to pass through at least one of said first sputter deposition stations and at least one of said second sputter deposition stations, a soft magnetic material multilayer deposition apparatus according to any one of claims 1 to 36.

38. A method of manufacturing a substrate having a core for an induction device or manufacturing an induction device comprising a core, wherein the core comprises a thin layer deposited by sputtering, and at least a part of the thin layer is deposited using the apparatus according to any one of claims 1 to 37.

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