Electrode Embedding Member, Substrate Holding Member, and Method for Manufacturing the Same

Abstract

To provide an electrode embedded member, a substrate holding member, and a manufacturing method thereof that have good heat transmission and uniform temperature distribution, and can reduce chemical contamination when used in a plasma etching process, etc. and easily form an insulating layer with thin and uniform thickness.SOLUTION: An electrode embedded member 100 includes a substrate 110 made of an AlN sintered body and formed in a flat plate shape, an electrode 120 provided on one main surface 112 of the substrate 110, a heating resistor 130 provided on the other main surface 114 of the substrate 110, a first oxide ceramic sprayed film 140 covering the one main surface 112 of the substrate 110, and a second oxide ceramic sprayed film 150 covering the other main surface 114 of the substrate 110.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electrode embedding member, a substrate holding member, and a method for manufacturing the same.

Background Art

[0002] Conventionally, as an electrode embedding member such as an electrostatic chuck used in a semiconductor manufacturing process, an electrode embedding member in which an electrode layer is embedded inside ceramics and integrally fired, and the whole is made of a ceramic sintered body, has been manufactured.

[0003] In recent years, with the increase in the amount of heat generated in the process, electrode embedding members such as electrostatic chucks used in semiconductor manufacturing processes are required to be made thinner in order to quickly transfer heat (heat passage). However, in conventional electrode embedding members, when the electrostatic adsorption electrode layer and the heater layer are different layers, it has been difficult to make the electrode embedding member thinner. For example, in the case of an electrostatic chuck with a built-in heater, at least two layers of electrodes need to be provided, and the two layers of electrodes need to be separated by a certain distance for insulation, and an additional insulating layer needs to be provided to insulate the provided electrodes from the outside. Therefore, when the entire electrostatic chuck is composed of a ceramic sintered body, its thickness has to be a certain degree thick.

[0004] Patent Document 1 discloses a wafer heating device having an electrostatic adsorption function in which a conductive heating layer is formed on one surface of a support substrate, a conductive electrostatic adsorption electrode is formed on the other surface, and further, an insulating layer is formed on these heating layers. In this device, the insulating layer covering the electrostatic adsorption electrode has a surface resistivity ρsE of the adsorbed object side portion smaller than the surface resistivity ρsE of the electrostatic adsorption electrode side portion. The technology of a wafer heating device having an electrostatic adsorption function is disclosed. Patent Document 1 describes that the support substrate preferably consists of any one of a silicon nitride sintered body, a boron nitride sintered body, a mixed sintered body of boron nitride and aluminum nitride, an alumina sintered body, an aluminum nitride sintered body, pyrolytic boron nitride, and pyrolytic boron nitride-coated graphite as the main component.

[0005] Patent Document 2 aims to provide an electrostatic chuck that has excellent withstand voltage characteristics, can be easily manufactured even with a complex-shaped internal electrode structure, and has little deformation of the base. The electrostatic chuck comprises a base, an electrode layer formed on the upper surface of the base, and an upper insulating layer formed on the base by thermal spraying so as to cover the electrode layer. The base is made of ceramics with a Young's modulus of 60 GPa or more, and the electrode layer is formed by plating. Also disclosed is that the difference between the values of the average thermal expansion coefficients of the materials constituting the base and the upper insulating layer at 20 to 30 °C is 2×10 -6 / °C or less, and the thickness of the base is 2 to 10 mm and the thickness of the upper insulating layer is 0.15 to 1.00 mm.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] In the case of an electrode-embedded member having a heater function, such as those in Patent Document 1 or 2, where an insulating layer is provided later, a heater electrode (heating resistor) is formed on a base material such as a sintered body by film formation or the like. At this time, variations in the film formation process are directly reflected in the temperature distribution of the electrode-embedded member. Therefore, the surface of the sintered body base material is preferably flat. Also, in some cases, the heating resistor is trimmed to adjust the resistance value in order to improve the temperature uniformity of the heater. However, if the flatness of the sintered body base material on the surface where the heater electrode is formed is poor, variations in film formation become large, and trimming processing may become difficult. Also, even when the flatness of the sintered body base material on the surface where the heater electrode is formed is good, depending on the film formation method, the flatness may deteriorate during film formation.

[0008] Patent Document 1 discloses a method of forming electrodes on both sides of an insulating ceramic serving as a base material. Electrodes are formed on both sides of a BN sintered body by thermal CVD of pyrolytic carbon, and an insulating layer of pyrolytic boron nitride is further formed thereon. Therefore, the overall thickness can be reduced by thinning the base material and the insulating layer. However, in the manufacturing method by thermal CVD, a temperature of nearly 2000°C is required, and thermal deformation of the base material after film formation occurred.

[0009] Also, Patent Document 2 does not assume a configuration in which electrodes are formed on both sides of the base, and thus does not consider heat transfer between the front and back surfaces. Also, although it is described that various ceramics can be used for the base, in reality, only examples limited to the case where both the base and the sprayed film are made of aluminum oxide are described.

[0010] The present invention has been made in view of such circumstances, and aims to provide an electrode-embedded member, a substrate holding member, and a manufacturing method thereof, which have good heat transfer, a uniform temperature distribution, can reduce chemical contamination when used in processes such as plasma etching, and can easily form an insulating layer with a thinner and more uniform thickness than when an insulating layer is formed by an oxide ceramic sintered body.

Means for Solving the Problems

[0011] (1) To achieve the above object, the electrode-embedded member of the present invention is an electrode-embedded member, which is composed of an AlN sintered body, a base material formed in a flat plate shape, an electrode provided on one main surface of the base material, a heating resistor provided on the other main surface of the base material, a first oxide ceramic sprayed film covering the one main surface of the base material, and a second oxide ceramic sprayed film covering the other main surface of the base material. Further, the electrode-embedded member of the present invention has the technical features described in (3) below. Furthermore, the first oxide ceramic sprayed film has a porosity of 0.1 to 5%, the first oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics, the second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics.

[0012] In this way, since the base material is composed of an AlN sintered body, the thermal conductivity can be increased, the passage of heat is good, and the temperature distribution becomes uniform. Further, since a raw material with a higher purity can be used for the oxide ceramic sprayed film as compared with the oxide ceramic sintered body, chemical contamination can be reduced when used in a process such as plasma etching. Also, an insulating layer with a thinner and more uniform thickness can be easily formed as compared with the case of forming an insulating layer with an oxide ceramic sintered body. Further, since the formation of the sprayed film can be performed after forming the heating resistor on the base material, trimming for adjusting the resistance value etc. of the heating resistor can be easily performed as required. Furthermore, the electrode embedding member of the present invention can achieve the technical effects described in (3) below.

[0013] (2) Further, in the electrode-embedded member of the present invention, the thickness of the electrode-embedded member in the direction perpendicular to the one main surface is characterized in that it is 1 mm or more and 8 mm or less.

[0014] In this way, by reducing the thickness of the entire electrode-embedded member, the heat conduction is higher and the passage of heat becomes even better.

[0015] (3) Further, in the electrode-embedded member of the present invention, the flatness of the other main surface of the base material is characterized in that it is 5 μm or less.

[0016] Thus, since the flatness of the plane on which the heating resistor is provided is high, it can be formed more homogeneously when forming the heating resistor, and variations in the resistance value of the heating resistor can be suppressed. As a result, a uniform heat generation distribution can be achieved. Further, even when trimming the heating resistor, trimming with high accuracy can be performed, and its effect can be fully exerted.

[0017] (4) Further, in the electrode embedding member of the present invention, the heating resistor is characterized by having a plurality of partial heating resistors to which different voltages can be applied respectively.

[0018] Thus, by arranging a plurality of partial heating resistors to which different voltages can be applied respectively in the same plane (so-called multi-zoning), the output of a plurality of electrodes (terminals) can be adjusted respectively, whereby the heat generation amount can be adjusted for each partial heating resistor, and the temperature distribution of the electrode embedding member can be adjusted.

[0019] (5) Further, in the electrode embedding member of the present invention, the number N of terminals connected to the plurality of partial heating resistors satisfies, with respect to the number n of the plurality of partial heating resistors,

Equation

[0020] When multi-zoning, in order to arrange many partial heating resistors in one plane, corresponding terminals are required. However, if the number of terminals becomes too large, the positions of those terminals become cold spots and cause temperature non-uniformity. In particular, when the thickness of the electrode embedding member is thin, the influence of the cold spots significantly affects the temperature distribution on the substrate mounting surface. However, by devising the connection pattern of the heating resistor, even when arranging many partial heating resistors, the number of terminals can be sufficiently reduced to satisfy the above formula, and the temperature distribution on the substrate mounting surface can be made uniform.

[0021] (6) Further, the substrate holding member of the present invention includes the electrode embedding member according to any one of (1) to (6) above, and a cooling member provided on the second oxide ceramic sprayed film side of the electrode embedding member and having a refrigerant flow path inside.

[0022] By using a substrate holding member in which a cooling member having a refrigerant flow path is further formed in the electrode embedding member, the sprayed film formed on the surface provided with the heating resistor of the electrode embedding member functions not only as an electrical insulation function but also as a thermal resistance layer. Therefore, even when the temperature of the substrate mounting surface of the electrode embedding member is high, the temperature of the surface on the cooling member side of the electrode embedding member can be kept low, and the applications that can be used in the semiconductor manufacturing process are expanded.

[0023] (7) Further, the manufacturing method of the electrode embedding member of the present invention is a manufacturing method of the electrode embedding member, including a step of molding and firing an AlN ceramic raw material powder to produce a flat base material made of an AlN sintered body, a step of forming an electrode on one main surface of the base material, A step of adjusting the flatness of the other main surface of the base material to 5 μm or less; a step of forming a heating resistor on the other main surface of the base material, a step of spraying a first oxide ceramic spraying raw material powder on the one main surface of the base material to form a first oxide ceramic sprayed film, and a step of spraying a second oxide ceramic spraying raw material powder on the other main surface of the base material to form a second oxide ceramic sprayed film. Furthermore, the first oxide ceramic sprayed film has a porosity of 0.1 to 5%, the first oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics, the second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics.

[0024] In this way, since the base material is composed of an AlN sintered body, the thermal conductivity can be reduced and the passage of heat can be improved. In addition, since the oxide ceramic sprayed film has a higher purity than the oxide ceramic sintered body, chemical contamination can be reduced when used in processes such as plasma etching, and an insulating layer thinner than that formed by the oxide ceramic sintered body can be easily formed. Further, since the formation of the sprayed film can be performed after forming the heating resistor on the base material, trimming for adjusting the resistance value of the heating resistor, etc. can be easily performed as needed.

[0025] (8) Further, the method for manufacturing a substrate holding member of the present invention is a method for manufacturing a substrate holding member, the method comprising: a step of forming and firing an AlN ceramic raw material powder to produce a flat base material made of an AlN sintered body; a step of forming an electrode on one main surface of the base material; A step of adjusting the flatness of the other main surface of the base material to 5 μm or less; a step of forming a heating resistor on the other main surface of the base material; a step of spraying a first oxide ceramic spraying raw material powder on the one main surface of the base material to form a first oxide ceramic sprayed film; a step of spraying a second oxide ceramic spraying raw material powder on the other main surface of the base material to form a second oxide ceramic sprayed film; a step of producing either a cooling member having a refrigerant flow path inside a joined plurality of metal members or a cooling member having a refrigerant flow path inside a fired plurality of ceramic compacts; and a step of applying an adhesive to at least one of the second oxide ceramic sprayed film or the cooling member to bond the electrode-embedded member and the cooling member. Furthermore, the first oxide ceramic sprayed film has a porosity of 0.1 to 5%, the first oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics, the second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics.

[0026] By providing a substrate holding member provided with a cooling member in which a refrigerant flow path is further formed in the electrode-embedded member, the sprayed film formed on the surface provided with the heating resistor of the electrode-embedded member functions as a thermal resistance layer in addition to the electrical insulation function. Therefore, even when the temperature of the substrate mounting surface of the electrode-embedded member is high, the temperature of the surface on the cooling member side of the electrode-embedded member can be kept low, and the applications that can be used in semiconductor manufacturing processes are expanded.

Effects of the Invention

[0027] According to the present invention, it is possible to configure an electrode-embedded member and a substrate holding member that can allow heat to pass through well, reduce chemical contamination when used in processes such as plasma etching, and can easily form an insulating layer having a thinner and more uniform thickness than when forming an insulating layer with an oxide ceramic sintered body.

Brief Description of the Drawings

[0028]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

[0029] Next, embodiments of the present invention will be described with reference to the drawings. For ease of understanding of the description, the same reference numerals are assigned to the same components in each drawing, and overlapping descriptions are omitted. In the configuration diagrams, the sizes of the respective components are conceptually represented and do not necessarily represent the actual dimensional ratios.

[0030] [First Embodiment] [Configuration of Electrode Embedding Member] FIG. 1 is a cross-sectional view showing an example of an electrode embedding member according to the first embodiment of the present invention. The electrode embedding member 100 of the present embodiment includes a base material 110, an electrode 120, a heating resistor 130, a first oxide ceramic sprayed film 140, and a second oxide ceramic sprayed film 150.

[0031] The thickness of the electrode-embedded member 100 is preferably 1 mm or more and 8 mm or less in the direction perpendicular to one main surface 112 of the base material 110 described later. In this way, by reducing the thickness of the entire electrode-embedded member 100, heat conduction becomes even better with high heat conductivity. Note that the thickness of the electrode-embedded member is the average value of the thicknesses measured at a plurality of locations within the substrate mounting surface.

[0032] The base material 110 is made of an AlN sintered body and is formed in a flat plate shape. The base material 110 has one main surface 112 and the other main surface 114 facing it. Also, the shape of the base material 110 can be various shapes such as a disc shape, a polygonal shape, an elliptical shape, etc.

[0033] That the base material 110 is made of an AlN sintered body means that the ceramic sintered body forming the base material 110 is composed of a ceramic sintered body having AlN as the main component. Having as the main component means that the weight ratio of the main component to the weight of the ceramic sintered body is 90 wt% or more. The base material 110 may contain additives for various purposes such as increasing the thermal conductivity in addition to the ceramics serving as the main component. For example, additives composed of oxides of group 2a elements, group 3a elements, or transition metal oxides may be added to adjust the thermal conductivity and volume resistivity.

[0034] Generally, it is known that for ceramics having AlN as the main component, the thermal conductivity increases as the addition amount of additives such as Y2O3 increases, but adding more than a certain amount causes a decrease in the thermal conductivity. Therefore, the content of the additive composed of oxides of group 2a elements, group 3a elements, or transition metal oxides is desirably 10 wt% or less. Examples of the additive of group 2a elements include Mg, Ca, Sr, Ba, etc., examples of the additive of group 3a elements include Y, La, Sm, Ce, etc., and examples of the additive of transition metals include Ti, Cr, Mn, Ni, etc.

[0035] The ceramic sintered body mainly composed of AlN has high thermal conductivity and excellent heat resistance and plasma resistance. Therefore, by forming the base material 110 with the ceramic sintered body mainly composed of AlN, a base material 110 with high thermal conductivity and excellent heat resistance and plasma resistance can be configured. As a result, the heat passage of the base material 110 is good and the temperature distribution becomes uniform.

[0036] The thickness of the base material 110 is preferably 0.5 mm or more and 7.9 mm or less. Thereby, the heat passage between one main surface 112 and the other main surface 114 can be made good, and the insulation between the electrode 120 and the heating resistor 130 can be made sufficient. If the thickness of the base material 110 is less than 0.5 mm, the insulation between the electrode 120 and the heating resistor 130 may become insufficient. In addition, the strength of the base material 110 is insufficient and the risk of breakage increases. If the thickness of the base material 110 is greater than 7.9 mm, there is a high risk of inhibiting heat passage and it may affect the semiconductor manufacturing process. The thickness of the base material 110 is obtained by subtracting the thicknesses of the first oxide ceramic sprayed film 140 and the second oxide ceramic sprayed film 150 from the thickness of the electrode embedding member 100. The method for obtaining the thickness of the sprayed film will be described later.

[0037] As described above, the thickness of the electrode embedding member 100 is preferably 1 mm or more and 8 mm or less in the direction perpendicular to one main surface 112. Therefore, the thickness of the base material 110 may be a thickness considering the thickness of the electrode embedding member 100 and the thicknesses of the first and second oxide ceramic sprayed films 140 and 150.

[0038] The flatness of one main surface 112 of the base material 110 is preferably 10 μm or less, and more preferably 5 μm or less. Thus, since the flatness of the plane on which the electrode 120 is provided is high, it is formed more uniformly when the electrode 120 is formed. Thereby, when the electrode 120 is used as, for example, an electrostatic adsorption electrode, the adsorption force within the substrate placement surface can be made uniform. Note that the flatness of the base material 110 after providing the sprayed film can be measured with a three-dimensional measuring instrument.

[0039] The flatness of the other main surface 114 of the base material 110 is preferably 5 μm or less, more preferably 3 μm or less. Further, the flatness of the other main surface 114 of the base material 110 is preferably 10% or less of the thickness of the heating resistor 130, more preferably 5% or less. Thus, since the flatness of the plane on which the heating resistor 130 is provided is high, it can be formed more uniformly when the heating resistor 130 is formed, and variations in the resistance value of the heating resistor 130 can be suppressed. Thereby, a uniform heat generation distribution can be achieved. Further, even when trimming of the heating resistor 130 is performed, trimming with high accuracy can be performed, and its effect can be fully exhibited.

[0040] The electrode 120 is provided on one main surface 112 of the base material 110. The electrode 120 is formed of Mo, W, Cu, or the like. The electrode 120 is used as an electrostatic adsorption electrode or a high-frequency electrode. The thickness of the electrode 120 in the stacking direction (the direction perpendicular to one main surface 112) is preferably 5 μm or more and 100 μm or less.

[0041] The heating resistor 130 is provided on the other main surface 114 of the base material 110. The heating resistor 130 is formed of Mo, W, Cu, or the like. The heating resistor 130 is used as a heater for heating the substrate. The thickness of the heating resistor 130 in the stacking direction is preferably 5 μm or more and 100 μm or less.

[0042] The first oxide ceramic sprayed film 140 is made of oxide ceramics and covers one main surface 112 of the base material 110 on which the electrode 120 is formed. Thereby, the electrode 120 is insulated. The top surface of the first oxide ceramic sprayed film 140 becomes the substrate mounting surface 142. The oxide ceramics used as the raw material may be any kind according to the purpose. The first oxide ceramic sprayed film 140 preferably consists of, for example, any one or a combination of two or more of alumina, yttria, zirconia, titania, chromia, and yttrium aluminum garnet. Thereby, it can be applied to various uses. Consisting of a combination of two or more means that the sprayed film is formed by a mixture of particles made of different raw materials. The first oxide ceramic sprayed film 140 preferably has a raw material purity of 99 wt% or more.

[0043] Since the oxide ceramic sprayed film does not contain a sintering aid or the like unlike the oxide ceramic sintered body, a raw material with a higher purity can be used compared to the oxide ceramic sintered body. Therefore, chemical contamination can be reduced when used in a process such as plasma etching. In addition, since the formation of the oxide ceramic sprayed film can be performed at a relatively low temperature, the possibility of thermal deformation of the base material during the formation of the oxide ceramic sprayed film can be reduced, and the uniformity of the temperature distribution of the base material can be maintained. When the base material undergoes thermal deformation, the uniformity of the temperature distribution may deteriorate. In addition, an insulating layer with a thinner and more uniform thickness can be easily formed compared to the case of forming an insulating layer with an oxide ceramic sintered body.

[0044] The first oxide ceramic sprayed film 140 preferably has a small porosity. Thereby, chemical contamination can be further reduced when used in a process such as plasma etching, and heat transfer can be made better. The porosity is preferably, for example, 0.1% or more and 5% or less.

[0045] The thickness of the first oxide ceramic sprayed film 140 is preferably 50 μm or more and 2000 μm or less from one main surface 112 of the base material 110. Thereby, sufficient insulation can be achieved and the overall thickness of the electrode embedding member 100 can be kept thin. The thickness of the sprayed film can be measured with an eddy current type thickness gauge (eddy current) or an ultrasonic flaw detector. It may also be measured by observing the cross section (optical microscope, magnifying glass). The thickness of the sprayed film is the average value of the values measured at a plurality of locations within the substrate mounting surface.

[0046] The second oxide ceramic sprayed film 150 is made of an oxide ceramic and covers the other main surface 114 of the base material 110 on which the heating resistor 130 is formed. Thereby, the heating resistor 130 is insulated. The oxide ceramic used as the raw material may be any kind according to the purpose. The second oxide ceramic sprayed film 150 preferably consists of, for example, any one or a combination of two or more of alumina, yttria, zirconia, titania, chromia, yttrium aluminum garnet. Thereby, it can be applied to various uses. The second oxide ceramic sprayed film 150 preferably has a raw material purity of 99 wt% or more. The second oxide ceramic sprayed film 150 may be a sprayed film using the same type of raw material as the first oxide ceramic sprayed film 140, or a sprayed film using different types of raw materials.

[0047] The second oxide ceramic sprayed film 150 preferably has a predetermined porosity. Thereby, it can function as a thermal resistance layer. The porosity is preferably 1% or more, more preferably 3% or more. The upper limit of the porosity does not particularly need to be limited, but can be, for example, 10% or less.

[0048] The thickness of the second oxide ceramic sprayed film 150 is preferably 50 μm or more and 2000 μm or less from the other main surface 114 of the base material 110. Thereby, sufficient insulation can be achieved and the overall thickness of the electrode embedding member 100 can be kept thin.

[0049] The electrode embedding member 100 includes the terminal 160 and the terminal hole 162 that are necessary in addition to the above. Thereby, power can be supplied to the electrode 120 and the heating resistor 130. The number of the terminals 160 and the terminal holes 162 can be various numbers according to the design of the electrode embedding member 100.

[0050] The electrode embedding member of the present invention can allow heat to pass well, can reduce chemical contamination when used in a process such as plasma etching, and can easily form an insulating layer with a thinner and more uniform thickness than when an insulating layer is formed by an oxide ceramic sintered body.

[0051] [Configuration of the substrate holding member] FIG. 2 is a cross-sectional view showing an example of a substrate holding member according to the first embodiment of the present invention. The substrate holding member 200 of the present invention includes the electrode embedding member 100 and the cooling member 210.

[0052] The cooling member 210 is joined to the second oxide ceramic sprayed film 150 of the electrode embedding member 100 by the adhesive layer 220. The cooling member 210 has a refrigerant flow path 212 inside. The cooling member 210 is preferably formed of metal. The Al alloy is most suitable due to its workability and high thermal conductivity, but alloys containing copper, titanium, nickel, SUS, etc. may also be used. Further, the cooling member may be formed of SiC or AlN having high thermal conductivity. When these ceramics are used, the physical property difference from the electrode embedding member is close, so the residual stress when integrated becomes small, and the risk of peeling and breakage can be further reduced. As the refrigerant, water, ethylene glycol, freon, etc. can be used, and the refrigerant temperature can be used below the boiling point.

[0053] Next, the adhesive layer 220 joins the second oxide ceramic sprayed film 150 and the cooling member 210. Thereby, the electrode embedding member 100 and the cooling member 210 can be joined. The adhesive layer 220 is preferably formed of a silicone adhesive mainly composed of silicone, such as a silicone resin or a modified silicone resin. Since the silicone adhesive has a Young's modulus sufficiently smaller than that of ceramics or metals, flexibility can be maintained. As the curing type of the silicone adhesive, dehydration, dealcoholization, addition polymerization type, etc. can be selected. Also, one-component curing, two-component curing, ultraviolet curing, etc. can be selected. The adhesive layer 220 may contain ceramics such as Al2O3 and AlN or metal fillers such as Cu for heat conduction adjustment. The thickness of the adhesive layer 220 is preferably 0.1 mm or more and 4.0 mm or less.

[0054] Since the substrate holding member of the present invention can be used in a semiconductor process while cooling the electrode embedding member with a cooling member, the effect of good heat passage of the electrode embedding member can be further enhanced, and it can be applied to a semiconductor process at a higher temperature than before.

[0055] [Method for manufacturing an electrode embedding member] Next, the method for manufacturing the electrode embedding member according to the present embodiment will be described. FIG. 3 is a flowchart showing an example of the method for manufacturing the electrode embedding member according to the first embodiment of the present invention. The method for manufacturing the electrode embedding member according to the first embodiment of the present invention includes, as shown in FIG. 3, a base material production step (step S1), an electrode formation step (step S2), and a sprayed film formation step (step S3).

[0056] (Base material production step) First, a base material is produced. The base material is formed into a flat plate shape from an AlN sintered body. The base material may be produced by any method, and the production method is appropriately selected. For example, a hot press method or HIP can be used.

[0057] For example, when using the hot pressing method, a compact can be produced by molding a mixed powder of AlN raw material powder and a sintering aid powder, and an AlN sintered body can be produced by firing this. At this time, for example, the firing temperature is adjusted to be within the temperature range of 1650 to 1950 °C. The firing time (the holding time at the firing temperature) is adjusted to be within the time range of 2 to 10 hours. The pressing pressure during firing is adjusted to be within the pressure range of 1 to 15 MPa. Note that these firing temperatures and firing times are also changed depending on the type and amount of the sintering aid powder, etc.

[0058] A step of adjusting the thickness may be provided by polishing or grinding one main surface or the other main surface of the fired substrate. When adjusting the thickness, it is preferably adjusted to 0.5 mm or more and 7.9 mm or less. Also, a step of adjusting the flatness of one main surface or the other main surface may be provided by polishing or grinding one main surface or the other main surface of the substrate. When adjusting the flatness, one main surface is preferably adjusted to 10 μm or less, more preferably 5 μm or less. Also, the other main surface is preferably adjusted to 5 μm or less, more preferably 3 μm or less. The flatness of the substrate can be measured with a three-dimensional measuring instrument or a laser interferometer.

[0059] (Electrode formation process, etc.) Next, an electrode is formed on one main surface of the substrate, and a heating resistor is formed on the other main surface. The method of forming the electrode or the heating resistor may be any method as long as it can be formed at a temperature at which thermal deformation does not occur in the substrate. As an example, a method of forming an electrode on an AlN sintered body substrate by the cold spray method will be described.

[0060] The cold spray method is a technique in which a powder material is made to collide with a substrate in a solid state below the melting temperature to form a film. The film formed by the cold spray method can obtain a dense film without oxidation in the atmosphere. Also, the thermal influence on the material particles is small, and thermal deterioration can be suppressed. Furthermore, compared with the conventional thermal spraying method, such as a high film formation speed and the possibility of forming a thick film, an electrode can be formed in a process with relatively less thermal influence.

[0061] (Particle velocity) Particles cannot adhere to the substrate unless the particle velocity exceeds the critical velocity at which the material particles begin to adhere. Therefore, a carrier gas is introduced to increase the particle velocity. A particle diameter of 5 μm or more is suitable because it facilitates handling.

[0062] (Carrier gas) In the cold spray method, nitrogen and helium are generally used mainly due to cost and other factors. Also, by mixing helium with nitrogen at an arbitrary ratio, it is possible to obtain a high-speed gas flow while suppressing costs. It is also possible to mix a small amount of hydrogen to prevent oxidation of the metal.

[0063] Note that the process of forming the electrode or heating resistor provided on the AlN sintered body substrate is not limited to the above, and post-metallization methods such as spraying, CVD, PVD, and DBC can be applied. For example, in the DBC method, copper and the AlN sintered body are directly bonded. The advantages of the DBC method are thick copper metallization and high bonding strength between copper and ceramic. The DBC method can form a thin copper electrode directly bonded on the AlN sintered body. However, heat treatment at a high temperature of 1000 °C or higher is required for metallization. In that case, since the electrode formation process is affected by a certain amount of heat, deformation of the AlN sintered body substrate may increase. Therefore, it becomes difficult to perform correction processing (trimming, etc.) due to variations in the resistance value of the formed heating resistor. Therefore, it is preferable to reduce the flatness of the other main surface of the AlN sintered body substrate before electrode formation in advance.

[0064] (Formation of electrode) In order to form a predetermined electrode pattern (including a heating resistor) on an AlN sintered body, there are a method of patterning with a hard mask when forming an electrode material on the surface of the AlN sintered body, and a method of forming an electrode material on one surface of the AlN sintered body and then patterning by sandblasting or the like after a predetermined masking. The former is selected in the case of the cold spray method, the spraying method, and the PVD method. The latter is selected in the case of the cold spray method, the spraying method, the CVD method, and the DBC method. By these methods, an electrode is formed on one main surface of the base material.

[0065] (Adjustment of heating resistor (trimming, etc.)) The heating resistor (electrode for heater) directly affects the temperature distribution of the product during product use. Therefore, after the pattern formation, the electrical resistance between each predetermined position of the heating resistor is measured, and the variation may be adjusted by processing the heating resistor after the measurement. Mainly, by reducing the thickness of the pattern to make the resistance value uniform at a high value, the variation within the plane where the heating resistor is arranged can be reduced. In addition, the width of the pattern and the shape of the pattern can also be adjusted by the same processing. Such processing is performed by machining or manual processing, but when the flatness of the other main surface of the AlN sintered body is large, it may hinder the adjustment. Therefore, the flatness of the other main surface is preferably adjusted to 5 μm or less, more preferably adjusted to 3 μm or less. Also, in relation to the heating resistor, the flatness of the other main surface is preferably 10% or less of the thickness of the heating resistor before trimming, and more preferably 5% or less.

[0066] (Sprayed film forming process) Next, a first oxide ceramic sprayed raw material powder is sprayed on one main surface of the base material on which the electrode is formed to form a first oxide ceramic sprayed film, and a second oxide ceramic sprayed raw material powder is sprayed on the other main surface of the base material on which the heating resistor is formed to form a second oxide ceramic sprayed film. The method of forming the sprayed film may be any of the dry and wet spraying methods, or a cold spray method using an aerosol. Here, as an example, a method by a wet spraying method will be described.

[0067] First, prepare an oxide ceramic raw material powder whose average particle diameter D50 falls within a predetermined range. Then, adjust a slurry by mixing the oxide ceramic raw material powder and water. The average particle diameter D50 of the oxide ceramic raw material powder is preferably 0.5 μm or more and 6 μm or less. When D50 is smaller than 0.5 μm, the viscosity of the slurry becomes high, making spraying difficult and deteriorating the film quality. Also, when it is larger than 6 μm, the slurry cannot be stably transported, resulting in deteriorated film quality. The average particle diameter D50 can be measured using dry measurement or wet measurement with a laser diffraction / scattering particle size distribution measuring device. The particle size distribution of the ceramic raw material powder is preferably sharp.

[0068] For the first oxide ceramic raw material powder and the second oxide ceramic raw material powder, various materials can be used according to the purposes of the first oxide ceramic sprayed film and the second oxide ceramic sprayed film, respectively. For the first oxide ceramic raw material powder and the second oxide ceramic raw material powder, for example, powders of alumina (Al2O3), yttria (Y2O3), zirconia (ZrO2), titania (TiO2), chromia (Cr2O3), yttrium aluminum garnet (Y3Al5O 12 , also denoted as YAG) or any mixed powder thereof are preferably used. These materials are used for various purposes such as protecting the base material and improving functions. The first oxide ceramic raw material powder and the second oxide ceramic raw material powder may be of the same type or different types.

[0069] Also, the concentration of the slurry is preferably 10 wt% or more and 40 wt% or less, and more preferably 20 wt% or more and 40 wt% or less. When the concentration of the slurry is less than 10 wt%, it takes time for construction and productivity is reduced, which is not industrially feasible. Also, when it is more than 40 wt%, the viscosity becomes high and the slurry cannot be stably transported.

[0070] Then, the adjusted slurry is plasma sprayed and coated on the sprayed surface (one main surface and the other main surface) of the base material. The gas used for spraying is preferably a non-oxidizing gas. As the non-oxidizing gas, for example, Ar gas, H2 gas, N2 gas, or a mixed gas of any combination thereof can be used. The above slurry is supplied to the nozzle via a tube pump and plasma sprayed using a gas.

[0071] Before the step of plasma spraying, a step of plasma irradiating the sprayed surface of the base material with only the gas without introducing the slurry may be provided. By providing such a step, the sprayed surface of the base material is preheated, and when plasma spraying, the molten oxide ceramic raw material powder is likely to penetrate into the voids such as the base material surface and the electrodes. Since the preheating temperature is not so high that the base material undergoes thermal deformation, there is no problem even if a preheating step is provided.

[0072] As a result, the first oxide ceramic sprayed film 140 and the second oxide ceramic sprayed film 150 derived from the slurry that cover one main surface 112 and the other main surface 114 of the base material 110 as shown in FIG. 1 are formed. The thicknesses of the first oxide ceramic sprayed film 140 and the second oxide ceramic sprayed film 150 are preferably adjusted to 50 to 2000 μm, and more preferably adjusted to 50 to 500 μm. This is because if the thickness of the sprayed film is less than 50 μm, the functions such as the insulating property, plasma resistance, abrasion resistance, and heat insulation property of the sprayed film are more likely to deteriorate. Also, if the thickness of the sprayed film exceeds 2000 μm, the internal stress of the sprayed film becomes large, increasing the likelihood of a decrease in adhesion or peeling.

[0073] The porosity of the first oxide ceramic sprayed film 140 is preferably adjusted to 0.1 to 5%. Also, the porosity of the second oxide ceramic sprayed film 150 is preferably adjusted to 1 to 10%.

[0074] (Formation of Terminals) After the thermal spraying film formation process, the necessary terminals are connected. The terminals connect the external power supply and the electrodes of the electrostatic chuck, and are provided by methods such as brazing, welding, soldering, and conductive adhesion using heat-resistant metals such as Ni, kovar, and Ti.

[0075] By such a manufacturing method, an electrode-embedded member in which an electrode or a heating resistor is formed on both main surfaces of a base material made of an AlN sintered body and an oxide ceramic thermal spraying film is formed can be manufactured.

[0076] [Manufacturing Method of Substrate Holding Member] Next, the manufacturing method of the substrate holding member according to the present embodiment will be described.

[0077] (Manufacturing Method of Cooling Member) When manufacturing the cooling member with metal, a plurality of metal members are prepared and a groove portion serving as a refrigerant flow path is formed. Next, the plurality of metal members having the groove portion formed therein are joined to manufacture a cooling member having a flow path. For the joining, after performing predetermined machining on the plurality of metal members, conventional metal joining methods such as brazing, electron beam welding, and diffusion bonding can be used. Al alloy is most suitable as the metal due to its workability and high thermal conductivity, but alloys containing copper, titanium, nickel, SUS, etc. can be used. The size and shape of the refrigerant flow path may be any as long as they can uniformly cool the ceramic member. The cooling member may be provided with a through hole for passing a terminal. Further, in order to reduce the number of through holes, the cooling member may be provided with a through hole for passing a plurality of terminals in a concentrated manner.

[0078] When the cooling member is made of ceramics such as SiC or AlN, a plurality of green compacts are prepared, and in any one of the green compact, the debound body obtained by debinding it, and the sintered body obtained by sintering it, a groove portion serving as a refrigerant flow path is formed. When a pre-sintering step is provided after the debinding step, the groove portion may be formed in the pre-sintered body. Although it is more difficult to form the groove portion in a later step, the dimensional accuracy of the groove portion is higher. Next, the cooling member can be manufactured by joining these. When the groove portion is formed before sintering, it can be joined by uniaxial pressure bonding sintering or normal pressure sintering. When the groove portion is formed in the sintered body after sintering, in addition to interposing an adhesive at the bonding interface, diffusion bonding may be performed under uniaxial pressure perpendicular to the bonding surface at a high temperature without using an adhesive.

[0079] (Bonding between the electrode-embedded member and the cooling member) The electrode-embedded member is preferably integrated with the cooling member using a silicone adhesive. The cooling member is preferably made of an Al alloy. A refrigerant flow path is provided inside the cooling member, and it can absorb the amount of heat transferred from the electrode-embedded member. The silicone adhesive preferably has a thermal conductivity of 0.1 to 2 W / mK, and more preferably 0.1 to 1.0 W / mK. The adhesive layer thickness is preferably 0.1 mm to 4 mm, and more preferably 0.5 mm to 2 mm. Any curing type may be used, but an addition polymerization heat-curing type is desirable, and it is preferably cured by heating at 100 °C or higher.

[0080] Also, in order to provide a thermal resistance layer, another type of sprayed film may be formed on the oxide ceramic sprayed film provided on the electrode-embedded member. Also, a sprayed film made of Al2O3 or ZrO2 may be formed on the surface of the bonding layer side of the cooling member. Silicone bonding can be integrated by applying an adhesive and then heating and curing it. When the bonding layer is formed of a silicone resin, the stress induced by the difference in physical properties between AlN and the cooling member can be relaxed, and defects such as peeling and cracking in the bonding layer can be prevented.

[0081] By such a manufacturing method, a substrate holding member in which the second oxide ceramic sprayed film of the electrode-embedded member and the cooling member are bonded and integrated can be manufactured.

[0082] [Second Embodiment] [Configuration of Electrode Embedding Member] FIG. 4 is a cross-sectional view showing an example of an electrode embedding member according to the second embodiment of the present invention. The electrode embedding member 100 of the present embodiment includes a base material 110, an electrode 120, a heating resistor 130, a first oxide ceramic sprayed film 140, and a second oxide ceramic sprayed film 150. That is, the basic configuration of the electrode embedding member according to the present embodiment is the same as that of the electrode embedding member according to the first embodiment. Therefore, only the different points will be described below.

[0083] The heating resistor 130 has a plurality of partial heating resistors 132 to which different voltages can be applied. In this way, by arranging a plurality of partial heating resistors to which different voltages can be applied in the same plane (so-called multi-zoning), the output of a plurality of electrodes (terminals) is adjusted respectively, so that the calorific value can be adjusted for each partial heating resistor, and the temperature distribution of the electrode embedding member can be adjusted.

[0084] In the case of multi-zoning, if the flatness of the other main surface 114 on which the partial heating resistor 132 is arranged is low, it becomes difficult to accurately form each partial heating resistor 132 so as to exhibit a resistance value as designed. In particular, when the number of partial heating resistors 132 increases, the low flatness significantly affects the deviation of the resistance value of the partial heating resistor 132 from the designed value. Also, when the flatness is low, it becomes difficult to trim. Therefore, the flatness of the other main surface 114 is preferably 5 μm or less, and more preferably 3 μm or less. Thereby, the deviation of the resistance value of the partial heating resistor 132 from the designed value can be reduced.

[0085] Further, the number N of terminals 160 connected to the plurality of partial heating resistors 132 satisfies, for the number n of the plurality of partial heating resistors 132, using the ceiling function, [Equation] It is preferable to satisfy.

[0086] When multi-zoning, since many partial heating resistors are arranged in a single plane, corresponding terminals are required. However, if the number of terminals becomes too large, the positions of those terminals will become cold spots and cause temperature non-uniformity. In particular, when the thickness of the electrode-embedded member is thin, the influence of the cold spots significantly affects the temperature distribution on the substrate mounting surface. However, by devising the connection pattern of the heating resistors, even if many partial heating resistors are arranged, the number of terminals can be sufficiently reduced to satisfy the above formula, and the temperature distribution of the base material can be made uniform. Note that the ceiling function is a function that rounds up the decimal part when the number is expressed with a small number of digits.

[0087] Figs. 5 to 7 are schematic views showing examples of the connection between a plurality of partial heating resistors 132 and terminals 160 of the electrode-embedded member 100 according to the present embodiment. Note that Figs. 5 to 7 only show the connection between the partial heating resistor 132 and the terminal 160, and do not show the shape of the partial heating resistor 132 or the specific positions of the terminals 160.

[0088] Fig. 5 shows an example where the number of terminals 160 is 13 with respect to the number of partial heating resistors 132 being 12. As shown in Fig. 5, by connecting one terminal of a certain partial heating resistor to share with one terminal of another partial heating resistor, the number of terminals N with respect to the number n of a plurality of partial heating resistors can be reduced to n + 1. Note that as long as the number of terminals can be reduced for the entire electrode-embedded member, in an actual electrode-embedded member, there may be a partial heating resistor that does not share terminals with other partial heating resistors.

[0089] Fig. 6 shows an example where the number of terminals 160 is 13 with respect to the number of partial heating resistors 132 being 24. As shown in Fig. 6, by extensively using Y-shaped connections, the number of terminals N with respect to the number n of a plurality of partial heating resistors can be reduced to less than n + 1 and up to n / 2 + 1.

[0090] FIG. 7 shows an example in which the number of the partial heating resistors 132 is 24 and the number of the terminals 160 is 10. As shown in FIG. 7, by surrounding the outer periphery with three partial heating resistors and providing a partial heating resistor between the terminals provided inside and the terminals around them each time a terminal is provided inside, the number N of the terminals with respect to the number n of the plurality of partial heating resistors can be reduced to a number equal to the left side of the above (Equation 1).

[0091] Note that, each time the number of the terminals is reduced, it becomes difficult to control each partial heating resistor. Therefore, in an actual electrode embedding member, it is necessary to consider the ease of controlling the partial heating resistors.

[0092] [Configuration of Substrate Holding Member] FIG. 8 is a cross-sectional view showing an example of a substrate holding member according to the second embodiment of the present invention. The substrate holding member 200 according to the present embodiment includes an electrode embedding member 100 and a cooling member 210. That is, the basic configuration of the substrate holding member according to the present embodiment is the same as that of the substrate holding member according to the first embodiment. Therefore, only the differences will be described below.

[0093] The cooling member 210 may be provided with through holes corresponding to the positions of the terminals 160. However, since the structure becomes complicated, when the through holes are provided, it is preferable that the through holes for passing several terminals in an aggregated manner are provided. Further, the cooling member 210 may have a refrigerant flow path 212 separated into a plurality of different paths. Thereby, only a part of the plurality of partial heating resistors 132 can be cooled.

[0094] [Examples and Comparative Examples] (Example 1) (Base Material Forming Step) Y2O3 and an organic binder were added to AlN raw material powder having a purity of 98% and an average particle diameter of 0.5 μm, and by a CIP (Cold Isostatic Pressing) molding method, 1 ton / cm 2Hydrostatic pressure forming was carried out to produce a formed body. Next, the formed body was fired at 2000 °C for 3 hours under normal pressure in an N2 atmosphere to produce an AlN sintered body with a diameter of Φ300 mm and a thickness of 7.25 mmt. Next, by polishing one main surface and the other main surface of the AlN sintered body substrate, the flatness was adjusted to 10 μm and the surface roughness was adjusted to Ra0.64 μm. In this way, the AlN sintered body substrate of Example 1 was prepared.

[0095] (Electrode formation process, etc.) The powder material was Mo, and the electrode and the heating resistor were formed by the cold spray method. The thickness of both was 30 μm.

[0096] (Plasma irradiation process) Next, a non-oxidizing gas plasma was irradiated or injected onto the surface to be sprayed of the substrate using a high-speed plasma spraying machine to preheat the surface to be sprayed. As the non-oxidizing gas, a mixed gas of Ar gas, N2 gas, and H2 gas was used. The supply amount of Ar gas to the nozzle constituting the spraying machine was controlled to 100 l / min, the supply amount of N2 gas was controlled to 70 l / min, and the supply amount of H2 gas was controlled to 70 l / min.

[0097] By controlling the applied current to the nozzle constituting the high-speed plasma spraying machine to 250 A, the supply power to the nozzle was adjusted to 65 kW. The distance between the tip of the nozzle and the surface to be sprayed of the substrate was adjusted to 75 mm. The scanning speed or displacement speed of the nozzle with respect to the substrate was adjusted to 850 mm / s. As a result, a plasma of a mixed gas of Ar gas, N2 gas, and H2 gas was generated, and the plasma was irradiated or injected from the tip of the nozzle onto the surface to be sprayed of the substrate. The preheating of the surface to be sprayed by the irradiation or injection of the plasma was carried out for 3 minutes.

[0098] (Plasma spraying process) Then, using the high-speed plasma spraying machine as it is, the Al2O3 slurry was plasma-sprayed onto the sprayed surface of the substrate using a non-oxidizing gas. The slurry was prepared by mixing 300 g of Al2O3 raw material powder with a purity of 99.9% and an average particle size D50 of 0.5 μm and 700 g of water to obtain the Al2O3 slurry. As the non-oxidizing gas, a mixed gas of Ar gas, N2 gas, and H2 gas was used. The supply rate of Ar gas to the nozzle constituting the spraying machine was controlled to 100 l / min, the supply rate of N2 gas was controlled to 70 l / min, and the supply rate of H2 gas was controlled to 70 l / min. As a result, the spraying speed was controlled to 600 - 700 mm / s.

[0099] By controlling the applied current to the nozzle constituting the high-speed plasma spraying machine to 250 A, the supply power to the nozzle was adjusted to 65 kW. The distance between the tip of the nozzle and the sprayed surface of the substrate was adjusted to 75 mm. The scanning speed or displacement speed of the nozzle with respect to the substrate was adjusted to 850 mm / s. As a result, a plasma of a mixed gas of Ar gas, N2 gas, and H2 gas was generated, and the raw material powder melted by the plasma was sprayed from the tip of the nozzle onto the sprayed surface of the substrate. The thickness of the first oxide ceramic sprayed film formed by spraying on one main surface was 250 μm. The thickness of the second oxide ceramic sprayed film formed by spraying on the other main surface was 500 μm. Then, processing for adjusting the thickness was performed on one or both of the sprayed films formed on the substrate as necessary so that the thickness over the entire surface of the electrode embedding member would be 8 mm. In this way, the electrode embedding member of Example 1 in which both main surfaces of the AlN sintered body substrate were covered with the Al2O3 sprayed film was produced.

[0100] (Example 2) In Example 2, the thickness of the substrate was 4 mm, and the flatness of both main surfaces of the substrate was 5 μm. Also, trimming was performed after forming the heating resistor. Otherwise, the electrode embedding member of Example 2 was produced under the same conditions as in Example 1.

[0101] (Example 3) In Example 3, the thickness of the base material was 0.75 mm, and the flatness of both main surfaces of the base material was 5 μm. Also, the thicknesses of the first oxide ceramic sprayed film and the second oxide ceramic sprayed film were 125 μm and 125 μm, respectively, and trimming was performed after forming the heating resistor. Otherwise, the electrode embedding member of Example 3 was produced according to the same conditions as in Example 1.

[0102] (Example 4) In Example 4, the thickness of the base material was 4 mm, and the flatness of both main surfaces of the base material was 5 μm. Also, trimming was performed after forming the heating resistor. Further, an Al2O3-5wt%TiO2 ceramic sprayed film with a film thickness of 250 μm was sprayed on one main surface. Otherwise, the electrode embedding member of Example 4 was produced according to the same conditions as in Example 1.

[0103] (Example 5) In Example 5, the thickness of the base material was 4 mm, and the flatness of both main surfaces of the base material was 5 μm. Also, trimming was performed after forming the heating resistor. Further, a ZrO2 ceramic sprayed film with a film thickness of 500 μm was sprayed on the other main surface. Otherwise, the electrode embedding member of Example 5 was produced according to the same conditions as in Example 1.

[0104] (Example 6) In Example 6, the thickness of the base material was 4 mm, and the flatness of both main surfaces of the base material was 5 μm. Also, as the arrangement pattern of the heating resistor was the pattern referring to FIG. 6, 12 partial heating resistors and 7 terminals were arranged. Otherwise, the electrode embedding member of Example 6 was produced according to the same conditions as in Example 1.

[0105] (Example 7) In Example 7, the thickness of the base material was 4 mm, and the flatness of both main surfaces of the base material was 5 μm. Also, as the arrangement pattern of the heating resistor was the pattern referring to FIG. 7, 24 partial heating resistors and 13 terminals were arranged. Otherwise, the electrode embedding member of Example 7 was produced according to the same conditions as in Example 1.

[0106] (Example 8) In Example 8, an electrode-embedded member was fabricated according to the same conditions as in Example 2. Further, a cooling member made of Al alloy (A6061) with a diameter of Φ300 mm, a thickness of 25 mm, and having a refrigerant flow path with a cross-sectional shape of width 10 mm and height 10 mm inside was fabricated. It was adhered using a silicone adhesive with a thermal conductivity of 0.9 / mK. The thickness of the adhesive layer was 1 mm. In this way, the substrate holding member of Example 8 was fabricated.

[0107] The electrode-embedded member or the substrate holding member of each example was installed in the chamber and used. In each case, it was possible to supply power to the heating resistor to raise the temperature of the substrate mounting surface to 300°C. At that time, it was found that the maximum value - minimum value within the range of φ290 mm was 10°C or less, the heat transfer was good, and the temperature distribution of the substrate mounting surface was uniform.

[0108] It was found that the electrode-embedded member of Example 2 had better heat transfer and a better temperature distribution on the substrate mounting surface compared to the electrode-embedded member of Example 1.

[0109] It was found that the electrode-embedded member of Example 3 had better heat transfer and a better temperature distribution on the substrate mounting surface compared to the electrode-embedded member of Example 1. Also, even when the thicknesses of the base material, the first and second oxide ceramic sprayed films were made thinner, it could be used without problems.

[0110] The electrode-embedded member of Example 4 had a volume resistivity of 10 11 Ωcm for the first oxide ceramic sprayed film on one main surface side, which functioned as an insulating layer for a so-called Johnson-Rahbek type electrostatic chuck, and it was found that the second oxide ceramic sprayed film on the other main surface side functioned as an electrical insulating material.

[0111] For the electrode-embedded member of Example 5, by making the second oxide ceramic sprayed film on the other main surface side a ZrO2 sprayed film, it was found that the second oxide ceramic sprayed film functioned as a heat insulating layer, and it was an electrode-embedded member with a good temperature distribution at high temperatures.

[0112] The electrode-embedded members of Example 6 and Example 7 were found to have the same number of partial heating resistors and to be electrode-embedded members with fewer cold spots compared to the electrode-embedded member with a larger number of terminals. It is considered that directly reducing the number of terminals had an effect.

[0113] It was found that the substrate holding member of Example 8 can be used in a higher temperature process compared to Examples 1 to 7.

[0114] From the above results, it was confirmed that the electrode-embedded member and the substrate holding member of the present invention have good heat passage, a uniform temperature distribution, can reduce chemical contamination when used in processes such as plasma etching, and can easily form an insulating layer with a thinner and more uniform thickness than when forming an insulating layer with an oxide ceramic sintered body.

[0115] The present invention is not limited to the above embodiments, and it goes without saying that the present invention extends to various modifications and equivalents included in the spirit and scope of the present invention. In addition, the structure, shape, number, position, size, etc. of the components shown in each drawing are for convenience of explanation and can be changed as appropriate.

Explanation of Reference Numerals

[0116] 100 Electrode-embedded member 110 Base material 112 One main surface 114 The other main surface 120 Electrode 130 Heating resistor 132 Partial heating resistor 140 First oxide ceramic sprayed film 142 Substrate placement surface 150 Second oxide ceramic sprayed film 160 Terminal 162 Terminal hole 200 Substrate holding member 210 Cooling member 212 Flow path 220 Adhesive layer

Claims

1. An electrode-embedded member, comprising: a substrate made of an AlN sintered body and formed in a flat plate shape; an electrode provided on one main surface of the substrate; a heating resistor provided on the other main surface of the substrate; a first oxide ceramic sprayed film covering the one main surface of the substrate; a second oxide ceramic sprayed film covering the other main surface of the substrate, wherein flatness of the other main surface of the substrate is 5 μm or less; the first oxide ceramic sprayed film has a porosity of 0.1 to 5%, and the first oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics; the second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics.

2. The electrode-embedded member according to claim 1, wherein a thickness of the electrode-embedded member in a direction perpendicular to the one main surface is 1 mm or more and 8 mm or less.

3. The electrode-embedded member according to claim 1 or claim 2, wherein flatness of the one main surface of the substrate is 10 μm or less.

4. The electrode-embedded member according to any one of claims 1 to 3, wherein the heating resistor has a plurality of partial heating resistors to which different voltages can be applied.

5. The number N of terminals connected to the plurality of partial heating resistors satisfies, with respect to the number n of the plurality of partial heating resistors, using a ceiling function, 【Number 1】 The electrode-embedded member according to claim 4.

6. The electrode-embedded member according to any one of claims 1 to 5, and a cooling member provided on the second oxide ceramic sprayed film side of the electrode-embedded member and having a refrigerant flow path inside.

7. A method for manufacturing an electrode-embedded member, comprising: a step of molding and firing an AlN ceramic raw material powder to produce a flat substrate made of an AlN sintered body; a step of forming an electrode on one main surface of the substrate; a step of adjusting flatness of the other main surface of the substrate to 5 μm or less; a step of forming a heating resistor on the other main surface of the substrate; a step of spraying a first oxide ceramic spraying raw material powder on the one main surface of the substrate to form a first oxide ceramic sprayed film; A step of spraying a second oxide ceramic spraying raw material powder onto the other main surface of the substrate to form a second oxide ceramic sprayed film, The first oxide ceramic sprayed film has a porosity of 0.1 to 5%, and the first oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics, The second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics. A method for manufacturing an electrode-embedded member, characterized by this.

8. A method for manufacturing a substrate holding member, A step of molding and firing an AlN ceramic raw material powder to produce a flat substrate made of an AlN sintered body, A step of forming an electrode on one main surface of the substrate, A step of adjusting the flatness of the other main surface of the substrate to 5 μm or less, A step of forming a heating resistor on the other main surface of the substrate, A step of spraying a first oxide ceramic spraying raw material powder onto the one main surface of the substrate to form a first oxide ceramic sprayed film, A step of spraying a second oxide ceramic spraying raw material powder onto the other main surface of the substrate to form a second oxide ceramic sprayed film, A step of manufacturing either a cooling member having a refrigerant flow path inside a joined plurality of metal members or a cooling member having a refrigerant flow path inside a fired plurality of ceramic compacts, A step of applying an adhesive to at least one of the second oxide ceramic sprayed film or the cooling member and bonding the electrode-embedded member and the cooling member, The first oxide ceramic sprayed film has a porosity of 0.1 to 5%, and the first oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics, The second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains 99 wt% or more of one or two or more oxide ceramics. A method for manufacturing a substrate holding member, characterized by this.

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