An ion implantation device with an energy filter and a support element for overlapping at least a part of the energy filter

Abstract

An ion implantation device (20) is provided that includes an energy filter (25) with at least one filter layer (32) and at least one support element (30) for supporting the energy filter (25), the at least one support element (30) overlapping at least a portion of the energy filter (25).

Description

Technical Field

[0001] The present invention relates to an ion implantation device comprising an energy filter and a support element overlapping the energy filter. The present invention also relates to an ion implantation device comprising a first energy filter and a second energy filter having different orientations, and a support element overlapping the first energy filter and the second energy filter. The present invention further relates to a method for manufacturing such an implantation device.

Background Art

[0002] Ion implantation is a method for achieving doping or defect profile generation in materials such as semiconductor materials or optical materials with a predetermined depth profile in a depth range from several nanometers to several tens of micrometers. Examples of such semiconductor materials include, but are not limited to, silicon, silicon carbide, and gallium nitride. Examples of such optical materials include, but are not limited to, LiNbO3, glass, and PMMA.

[0003] There is a need to generate depth profiles by ion implantation having a depth distribution broader than the depth distribution of doping concentration peaks or defect concentration peaks obtained by single energy ion irradiation, or to generate doping depth profiles or defect depth profiles that cannot be generated by one or several simple single energy implantations. Doping concentration peaks can often be approximated by a Gaussian distribution, or more precisely by a Pearson distribution. However, there are also deviations from such distributions, especially when the so-called channeling effect is present in the crystalline material. Prior art methods for generating depth profiles using a structured energy filter that changes the energy of a single energy ion beam as the single energy ion beam passes through a microstructured energy filter element are known. The resulting energy distribution results in the creation of depth profile ions in the target material. This is described, for example, in European Patent 0014516 B1 (Bartko).

[0004] An example of such an ion implantation device 20 is shown in FIG. 1, where in this example, the ion beam 10 impinges on the structured energy filter 25. The ion beam source 5 can also be a cyclotron, a radio frequency linear accelerator, an electrostatic tandem accelerator, or a single-ended electrostatic accelerator. In other embodiments, the energy of the ion beam source 5 is between 0.5 MeV / nucleon and 3.0 MeV / nucleon, or preferably between 1.0 MeV / nucleon and 2.0 MeV / nucleon. In certain embodiments, the ion beam source generates the ion beam 10 with an energy between 1.3 MeV / nucleon and 1.7 MeV / nucleon. The total energy of the ion beam 10 is between 1 MeV and 50 MeV, in a preferred embodiment between 4 MeV and 40 MeV, and in a preferred embodiment between 8 MeV and 30 MeV. The frequency of the ion beam 10 can be between 1 Hz and 2 kHz, such as between 3 Hz and 500 Hz, and in some embodiments between 7 Hz and 200 Hz. The ion beam 10 can be a continuous ion beam 10. Examples of ions in the ion beam 10 include, but are not limited to, aluminum, nitrogen, hydrogen, helium, boron, phosphorus, carbon, arsenic, and vanadium.

[0005] In FIG. 1, it can be seen that the energy filter 25 is made of a film having a triangular cross-sectional shape on the right-hand side, but this type of cross-sectional shape is not a limitation of the present invention, and other cross-sectional shapes can be used. The region 25 through which the upper ion beam 10-1 passes through the energy filter 25 min has the minimum thickness of the film of the energy filter 25, so the upper ion beam 10-1 passes through the energy filter 25 with little reduction in energy. In other words, if the energy of the upper ion beam 10-1 on the left-hand side is E1, the energy of the upper ion beam 10-1 will have substantially the same value E1 on the right-hand side (due to a small energy loss due to the stopping power of the film that results in at least partial absorption of the energy of the ion beam 10 in the film).

[0006] On the one hand, the lower ion beam 10-2 passes through the region 25 where the film of the energy filter 25 is thickest. max The energy E2 of the lower ion beam 10-2 on the left-hand side is substantially absorbed by the energy filter 25. Thus, the energy of the lower ion beam 10-2 on the right-hand side is reduced and is smaller than the energy of the upper ion beam, that is, E1 > E2. As a result, the upper ion beam 10-1 with a larger energy can penetrate deeper into the substrate material 30 with respect to the lower ion beam 10-2 with a smaller energy. This results in different depth profiles in the substrate material 30, which is part of the wafer.

[0007] This depth profile is shown on the right-hand side of FIG. 1. The solid-line rectangular region indicates that the ions penetrate the substrate material at a depth between d1 and d2. However, the shape of the horizontal profile is a special case, which can be obtained, for example, when all energies are considered geometrically equal and the energy filter and the substrate material are the same. The Gaussian curve shows an approximate depth profile having a maximum value at a depth of d3 without the energy filter 25. Since part of the energy of the ion beam 10-1 is absorbed by the energy filter 25, it is understood that the depth d3 is greater than the depth d2.

[0008] In the prior art, there are several known principles for the production of the energy filter 25. Typically, the energy filter 25 is made from a bulk material with an etched surface of the energy filter 25 in order to generate a desired pattern such as the triangular cross-sectional pattern known from FIG. 1. German Patent DE102016106119B4 (Csato / Krippendorf) describes an energy filter manufactured from layers of materials with different ion beam energy reduction characteristics. The depth profile resulting from the energy filter described in the Csato / Krippendorf patent application depends on both the structure of the layers of material and the structure of the surface.

[0009] A further structural principle is shown in the applicant's co-pending application DE102019120623.5, where the energy filter comprises spaced microstructured layers integrally connected by vertical walls.

[0010] The maximum output from the ion beam 10 that can be absorbed through the energy filter 25 depends on three factors, namely, an effective cooling mechanism for the energy filter 25, the thermomechanical properties of the membrane from which the energy filter 25 is made, and the choice of material from which the energy filter 25 is made. In a typical ion implantation process, approximately 50% of the output is absorbed in the energy filter 25, but this can be increased up to 80% depending on the processing conditions and the filter shape.

[0011] An example of an energy filter is shown in Figure 2. The energy filter 25 is made of a film having a triangular structure mounted on the frame 27. In one non-limiting example, the energy filter 25 includes, for example, a silicon dioxide layer 22 of an insulating layer having a thickness of 0.2 to 1 μm sandwiched between a silicon layer 21 (with a thickness of up to 200 μm, typically between 2 μm and 20 μm) and bulk silicon 23 (with a thickness of about 400 μm), and can be made of a single material such as a silicon-on-insulator. The structured film can be made of, for example, silicon, but can also be made of silicon carbide, other silicon- or carbon-based materials, or ceramics.

[0012] To efficiently use the ion beam 10, by optimizing the wafer throughput in the ion implantation process for a given ion current of the ion beam 10, it is preferable to irradiate only the film of the energy filter 25 and not irradiate the frame 27 where the film is held in place. In practice, at least a part of the frame 27 may also be irradiated by the ion beam 10 and thus may be heated. In fact, it is possible for the frame 27 to be completely irradiated. The film forming the energy filter 25 is heated, but since the film is thin (i.e., between 2 μm and 20 μm, but up to 200 μm), it has a very low thermal conductivity. The film ranges in size from 2x2 cm 2 to 35x35 cm 2 and corresponds to the size of the target wafer. There is little heat conduction between the film and the frame 27. Therefore, the monolithic frame 27 does not contribute to the cooling of the film, and the only cooling mechanism for the associated film is thermal radiation from the film.

[0013] Local heating of the membrane in the energy filter 25 occurs in addition to the thermal stress between the heated portion of the membrane forming the energy filter 25 and the frame. Further, local heating of the membrane due to absorption of energy from the ion beam 10 in only a portion of the membrane, such as, for example, by electrostatic or mechanical scanning of the beam, or by mechanical movement of the filter with respect to the beam, also results in thermal stress in the membrane and can result in mechanical deformation or damage to the membrane. Heating of the membrane also occurs within a very short time period, i.e., less than 1 second, and often on the order of milliseconds. The cooling effect occurs during or immediately after local transient radiation because adjacent or more distant regions of the filter have a lower temperature than the instantaneously irradiated region. The problem is that there is little heat conduction to provide heat equalization. This non-uniform temperature distribution is particularly pronounced for the pulsed ion beam 10 and the scanned ion beam 10. These temperature gradients can result in the formation of defects and separated phases in the material from which the membrane of the energy filter 25 is made and can even result in unexpected modification of the material.

[0014] Previously, the problem was that the associated risk of damage to the membrane due to tension and increased cracking and brittleness, etc., was more likely to occur at all stages of the ion implantation process (i.e., the time before irradiation, the stage of heating the membrane by the ion beam (locally or globally), the actual irradiation (locally or globally), the cooling stage (locally or globally) after removal of the ion beam, and the end of the implantation process).

[0015] Therefore, it is an object of the present invention to provide an energy filter for an implantation device that is more resistant to stresses generated thermomechanically or to the formation of mixed phases and defect clusters, i.e., such that cracks and strains are better absorbed, or is more resistant to similar problems between process phases. The foregoing term "process phases" includes, but is not limited to, the time prior to irradiation (i.e., this mainly refers to the handling, transportation, installation, etc. of the filter), the phase of heating the film by the ion beam (locally or globally), the actual irradiation of the film (locally or globally), the cooling phase (locally or globally) after removal of the ion beam, and the end of the implantation process.

[0016] Therefore, there is a need to improve the energy filter of the implantation device in order to improve the mechanical stability and thermomechanical stability of the energy filter.

Prior Art Documents

Patent Documents

[0017]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Means for Solving the Problems

[0018] According to a first aspect of the present invention, there is provided an implantation device comprising an energy filter with at least one filter layer and at least one support element for supporting the energy filter, the at least one support element overlapping at least a part of the energy filter.

[0019] In one aspect of the ion implantation device, at least one support element is a backside support element.

[0020] In one aspect of the ion implantation device, at least one support element is a frontside support element.

[0021] In another aspect of the ion implantation device, at least one support element has a first height, the energy filter has a maximum height, and the first height of at least one support element is at least the same as the maximum height of the energy filter.

[0022] In one aspect of the ion implantation device, at least one support element has a first width, the energy filter has a minimum width, and the first width of at least one support element is at least the same as the minimum width of the energy filter. The minimum width of the energy filter is ±0.3 μm, ±0.5 μm, or ±0.8 μm. The first width of at least one support element is at least 10%, 20%, or 50% greater than the minimum width d of the energy filter. The minimum width d of the energy filter min refers to the minimum distance technically required between two structural energy filter elements at the thickest position. The first width of at least one support element is at least twice, five times, or ten times greater than the minimum width d of the energy filter. min refers to the minimum distance technically required between two structural energy filter elements at the thickest position. The first width of at least one support element is at least twice, five times, or ten times greater than the minimum width d of the energy filter. min is at least twice, five times, or ten times greater than.

[0023] In one aspect of the ion implantation device, at least one support element is made of silicon carbide. At least one support element may also be made of the same material as the energy filter, or at least one support element may be made of a material different from the energy filter.

[0024] According to a second aspect of the present invention, there is provided an implantation device comprising a first energy filter, a second energy filter, and at least one support element. The first energy filter has a first orientation. The second energy filter has a second orientation. At least one support element for supporting the first and second energy filters overlaps at least a part of the first energy filter and at least a part of the second energy filter, and the first orientation of the first energy filter is different from the second orientation of the second energy filter.

[0025] In one aspect of the ion implantation device, the first energy filter and the second energy filter are arranged in one of a square composite arrangement, a rectangular composite arrangement, a hexagonal composite arrangement, or an intersecting grid composite arrangement.

[0026] In one aspect of the ion implantation device, at least one support element has an absorption capacity greater than the maximum absorption capacity of the energy filter. A support element for a completely transparent energy filter would add discrete peaks to a preferably smooth (continuous) profile. In any case, if the primary energy is high enough, the support element also contributes to the resulting depth profile in the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the area division in the energy filter.

[0027] According to a third aspect of the present invention, there is provided a method for manufacturing an ion implantation device, the method comprising the steps of providing at least one filter layer to an energy filter, providing at least one support element, supporting the energy filter by the at least one support element, and overlapping at least a part of the energy filter by the at least one support element.

[0028] According to a fourth aspect of the present invention, there is provided a method for manufacturing an ion implantation device, the method comprising the steps of: providing a first energy filter; orienting the first energy filter in a first orientation; providing a second energy filter; orienting the second energy filter in a second orientation different from the first orientation of the first energy filter; supporting the first and second energy filters by at least one support element; and overlapping at least a part of the energy filters by at least one support element.

[0029] In a further aspect, a method for manufacturing an ion implantation device according to the third or fourth aspect may be used in one of the sequences of screen printing, multilayer processing, patterning processing, and etching processing.

[0030] According to a fifth aspect of the present invention, a method for manufacturing an ion implantation device, comprising the steps of: providing a silicon-on-insulator (SOI) wafer as a substrate material having a first surface and a second surface, wherein the thickness of the buried oxide (BOX) varies between 30 nm and 1.5 μm; applying a first mask material layer and a second mask material layer for masking wet chemical potassium hydroxide (KOH) etching or tetramethylammonium hydroxide (TMAH) etching to the first surface and the second surface of the SOI wafer; using first and second lithography processing steps and at least one wet or dry etching pattern forming step to form a pattern of the first mask material layer and the second mask material layer on the first surface and the second surface; cleaning the first surface and the second surface after the pattern formation of the mask material layer; performing a first wet chemical etching of the first surface or the second surface using an etching solution of KOH or TMAH; performing a second wet chemical etching of the first surface or the second surface using an etching solution of KOH or TMAH; performing a wet chemical etching of the first surface or the second surface such that the etching is stopped at the BOX layer; removing the BOX layer; and removing the mask layer on the first surface and the second surface.

[0031] In one aspect of the method, a first protective layer is applied to the first surface or the second surface to prevent etching.

[0032] In a further aspect of the method, a second protective layer is applied to the first surface or the second surface to prevent etching of the first surface or the second surface.

[0033] According to a sixth aspect of the present invention, there is provided a method for manufacturing an ion implantation device, comprising: providing a bulk material slab, wherein the thickness of the bulk material slab is at least as high as that of at least one support element; and continuously removing the material by a laser etching or mechanical corrosion device, wherein the removal is an increment from several tens of nanometers to a maximum of several micrometers per step, and involves several removal steps for a given structure, and the continuous removal is carried out according to a predetermined 3D layout of an energy filter structure and at least one support element.

[0034] According to a seventh aspect of the present invention, there is provided a method for manufacturing an ion implantation device, comprising: providing a substrate or a base layer; depositing a first support layer and a first filter layer; patterning the first support layer and the first filter layer using an appropriate etching technique such as masked etching or continuous etching by a laser or ion beam etching device; continuously depositing and patterning a plurality of the first support layer and the first filter layer; and removing, polishing, or etching the substrate or the base layer to a desired substrate layer thickness or base layer thickness.

[0035] According to an eighth aspect of the present invention, there is provided a method for manufacturing an ion implantation device, comprising: providing an energy filter and a separation structure of at least one support element; and applying a bonding layer or an adhesive layer to achieve a permanent and thermomechanically stable connection between the energy filter and the at least one support element.

[0036] Here, the present invention will be described with reference to the drawings. It is understood that the embodiments and aspects of the present invention described in the drawings are merely examples and do not limit the scope of protection of the claims in any way. The present invention is defined by the claims and their equivalents. It is understood that the features of one aspect or embodiment of the present invention can be combined with the figures of different aspects of other embodiments of the present invention. The present invention will become more apparent when the following detailed description of some examples as part of this disclosure is read in conjunction with the accompanying drawings.

Brief Description of the Drawings

[0037]

Figure 1

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Figure 6E

Figure 7A

Figure 7B

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Figure 7F

Embodiments for Carrying Out the Invention

[0038] Here, the present invention will be described based on the drawings. It is understood that the embodiments and aspects of the present invention described herein are merely examples and do not limit the scope of protection of the claims in any way. The present invention is defined by the claims and their equivalents. It is understood that the features of an aspect or embodiment of the present invention can be combined with the features of different aspects and / or embodiments of the present invention. The object of the present invention is fully described below using examples for the purpose of the present disclosure without limiting the present disclosure to those examples. The examples present different aspects of the present invention. It is not necessary to implement all of these combined aspects in order to practice the teachings of this technology. Rather, experts will presumably be wise and will select and combine those aspects that are required for the corresponding applications and implementations.

[0039] FIG. 3 shows a cross-sectional view of an ion implantation device 20 according to a first aspect of the present invention, with an energy filter 25 and at least one support element 30 for supporting at least a part of the energy filter 25. The energy filter 25 is made of a film having a triangular cross-sectional form, but this type of cross-sectional form is not a limitation of the present invention, and other cross-sectional forms can be used.

[0040] At least one support element 30 is made of silicon carbide, but the material of the support element 30 is not a limitation of the present invention. The at least one support element 30 can be made of the same material as the energy filter 25 or a different material from the energy filter 25. In one non-limiting example, the energy filter 25 can be made of a single material, such as a silicon-on-insulator comprising a silicon dioxide layer of an insulating layer having a thickness of 0.3 to 1.5 μm sandwiched between a silicon layer (with a thickness up to 200 μm, typically between 2 μm and 20 μm) and bulk silicon (with a thickness of about 400 μm or more).

[0041] The structured film is made of, for example, silicon, but can also be made of silicon carbide, or other carbon-based materials, or ceramics. The energy filter 25 has at least one filter layer 32 with a layer thickness having a minimum thickness of the film. As seen in FIG. 3, at least one support element 30 is configured to support the energy filter 25, and at least one support element 30 overlaps at least a part of the energy filter 25. When at least one support element 30 overlaps at least a part of the energy filter 25, the functionality of the energy filter 25 is obstructed in the overlapping region. The overlapping support element 30 creates at least a non-active region of at least a part of the energy filter 25. In other words, the overlapping support element 30 results in the absorption of at least a part of the energy of the ion beam 10 in the support element 30. The support element 30 has an absorption capacity greater than the maximum absorption capacity of the structural element, that is, greater than the maximum absorption capacity of the energy filter 25. Therefore, the overlapping support element 30 obstructs or masks at least a part of the functionality of the energy filter 25, thereby improving the mechanical stability and thermo-mechanical stability of the energy filter 25 of the implantation device 20.

[0042] Figure 4A shows a cross-sectional view of an ion implantation device 20 according to a first aspect of the present invention, in which at least one support element 30 is provided as a back support element. The energy filter 25 is made from a film having a triangular cross-sectional shape with five filter layers 32, each of the five filter layers 32 having a layer thickness with the minimum thickness of the film. The amount of filter layers and the resulting shape of the structure are not limitations of the present invention. As seen in Figure 4A, at least one support element 30 comprises a plurality of support layers 31. As seen in Figure 4A, at least one support element 30 comprises six support layers 31, although the amount of layers is not a limitation of the present invention. In fact, at least one support element 30 can comprise up to 20 to 30 support layers 31. As seen in Figure 4A, at least one support element 30 is configured to support the energy filter 25, and at least one support element 30 overlaps at least a part of the energy filter 25. Figure 4B shows a cross-sectional view of an ion implantation device 20 according to a first aspect of the present invention, in which at least one support element 30 is provided as a front support element rather than in the back support element.

[0043] The energy filter 25 including the support elements 30 have different diameters. For a 4 inch (10.2 cm) diameter wafer, the filter is at least 5 inches (12.7 cm) wide and a maximum of 5 inches (12.7 cm) tall, for a 6 inch (15.2 cm) diameter wafer, the filter is at least 7 inches (17.8 cm) wide and a maximum of 7 inches (17.8 cm) tall, for an 8 inch (20.3 cm) diameter wafer, the filter is a minimum of 9 inches (22.9 cm) wide and a maximum of 9 inches (22.9 cm) tall, and for a 12 inch (30.5 cm) wafer, the filter is a minimum of 13 inches (33 cm) wide and a maximum of 13 inches (33 cm) tall. The energy filter may have three shapes: rectangular, e.g., 7 inches (17.8 cm) wide and up to 6 cm high, square, e.g., 13 inches x 13 inches (33 cm x 33 cm), and circular, e.g., 7 inches (33 cm) diameter. At least one support element 30 has a thickness whose value depends on the technology. For the front support element design, the thickness of the support element 30 is the same as the energy filter 25, or the thickness of the support element 30 is greater than the energy filter 25. For the back support element design, the support element is preferably formed with a thickness of less than 100 μm up to several mm.

[0044] FIG. 4C shows that the support element 30 has a first height h supp and the energy filter 25 has a maximum height h max and the first height h of the support element 30 supp is the maximum height h of the energy filter 25 max 4C shows a cross-sectional view of an ion implantation device 20 according to a first embodiment of the present invention, which is at least the same as that shown in FIG. 4C. As can be seen in FIG. 4C, at least one support element 30 is configured to support an energy filter 25, and the at least one support element 30 has a maximum height h max A first height h of the support element 30 that is at least as high as supp The first height h suppWhen at least one support element 30 with [accompanying content] overlaps at least a part of the energy filter 25, the functionality of the energy filter 25 is hindered in the overlapping region. The support element 30 has an absorption capacity greater than the maximum absorption capacity of the structural element, that is, greater than the maximum absorption capacity of the energy filter 25. In the case of partial transparency of the energy filter 25, the first height h supp The overlapping support element 30 with [accompanying content] creates an inactive region for at least a part of the energy filter 25. In other words, the overlapping support element 30 with the first height h supp results in the absorption of at least a part of the energy of the ion beam 10 in the support element 30. Therefore, in the case of partial transparency of the energy filter 25, the overlapping support element 30 with the first height h supp hinders or masks at least a part of the functionality of the energy filter 25. For a completely transparent energy filter 25, the support element 30 will add discrete peaks to the preferred smooth (continuous) profile. In any case, when the primary energy is high enough, the support element 30 also contributes to the resulting depth profile on the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the region division in the energy filter 25. Thereby, the mechanical stability and thermomechanical stability of the energy filter 25 of the implantation device 20 are improved.

[0045] As can also be seen in the cross-sectional view of FIG. 4C, the support element 30 of the ion implantation device 20 according to the first aspect of the present invention has a first width d supp and the energy filter 25 has a minimum width d min The first width d of the support element 30 supp is at least the same as the minimum width d of the energy filter 25 min and the d of the energy filter 25 min is provided in a stepped manner and is the technically minimum width of the energy filter 25. In one aspect of the present invention, the minimum width d of the energy filter 25 min (technically minimum width) is ±0.3 μm, ±0.5 μm, or ±0.8 μm, but the minimum width dmin is not a limitation of the present invention. In other aspects of the present invention, the first width d of the support element 30 supp is at least 10%, 20%, or 50% greater than the minimum width d of the energy filter 25 min Specifically, in still other aspects of the present invention, the first width d of the support element 30 supp is at least twice, five times, or ten times greater than the minimum width d of the energy filter 25 min As seen in FIG. 4C, at least one support element 30 is configured to support the energy filter 25, and at least one support element 30 has a first width d of the support element 30 supp provide a width at least as large as the minimum width d of the energy filter 25 min and overlap at least a portion of the energy filter 25. The support element 30 has an absorption capacity greater than the maximum absorption capacity of the structural element, that is, greater than the maximum absorption capacity of the energy filter 25. In the case of partial transparency of the energy filter 25, when at least one support element 30 with the first width d overlaps at least a portion of the energy filter 25, the functionality of the energy filter 25 is hindered in the overlapping region. Therefore, in the case of partial transparency of the energy filter 25, the overlapping support element 30 with the first width d supp creates a non-active region of the energy filter 25. In other words, the overlapping support element 30 with the first width d supp results in the absorption of at least a portion of the energy of the ion beam 10 in the support element 30. Therefore, in the case of partial transparency of the energy filter 25, the first width d supp In other words, the overlapping support element 30 with the first width d results in the absorption of at least a portion of the energy of the ion beam 10 in the support element 30. Therefore, in the case of partial transparency of the energy filter 25, the first width d suppOverlapping support elements 30 associated therewith interfere with or mask at least some of the functionality of the energy filter 25. Support elements 30 of a fully transparent energy filter 25 would add discrete peaks to a preferred smooth (continuous) profile. In any case, if the primary energy is high enough, the support elements 30 also contribute to the resulting depth profile in the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the region division in the energy filter 25. Thereby, the mechanical stability and the thermo-mechanical stability of the energy filter 25 of the implantation device 20 are improved.

[0046] As can be seen in FIG. 4C, at least one support element 30 has a first width d of at least one support element 30 supp is defined to be larger than the production terrace-like region d min The production terrace-like region d min is determined by the applied etching and lithography processes. Typical values of the production terrace-like region d min are, for example, 0.3 μm, 0.5 μm, or 0.8 μm. In order to optimize the transparency of the energy filter 25, the value of the production terrace-like region d min is selected to be as small as possible. At least one support element 30 is defined by exceeding these minimum values, and as at least one support element 30 becomes wider, the mechanical stability and the thermo-mechanical stability of the energy filter 25 are higher.

[0047] FIGS. 5A to 5C show top views of at least one support element 30 of the ion implantation device 20 according to the first aspect of the present invention, which is oriented at an angle with respect to the energy filter 25. By providing an orientation of the support element 30 at an angle with respect to the energy filter 25, the mechanical stability and the thermo-mechanical stability of the energy filter 25 of the ion implantation device 20 are further improved.

[0048] Figures 5D and 5E show top views of an ion implantation device 20 according to a first aspect of the present invention with different orientations. As seen in Figure 5D, at least one support element 30 is configured to support the energy filter 25, and at least one support element 30 overlaps at least a part of the energy filter 25. The support element 30 has an absorption capacity that is greater than or equal to the maximum absorption capacity of the structural element, i.e., the maximum absorption capacity of the energy filter 25. In the case of the partial transparency of the energy filter 25, when at least one support element 30 overlaps at least a part of the energy filter 25, the functionality of the energy filter 25 is hindered in the overlapping region. In the case of the partial transparency of the energy filter 25, the overlapping support element 30 creates at least a non-active region of at least a part of the energy filter 25. In other words, in the case of the partial transparency of the energy filter 25, the overlapping support element 30 results in the absorption of at least a part of the energy of the ion beam 10 in the support element 30. Therefore, in the case of the partial transparency of the energy filter 25, the overlapping support element 30 obstructs or masks the functionality of at least a part of the energy filter. The support element 30 of the completely transparent energy filter 25 will add discrete peaks to a preferably smooth (continuous) profile. In any case, when the primary energy is high enough, the support element 30 also contributes to the resulting depth profile in the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the region division in the energy filter 25. Thereby, the mechanical stability and thermo-mechanical stability of the energy filter 25 of the implantation device 20 are improved. As seen in Figure 5E, the ion implantation device 20 has a different orientation with respect to the ion beam source 5 (not shown) compared to the ion implantation device 20 shown in Figure 5D. By providing a different orientation with respect to the ion beam source 5, the mechanical stability and thermo-mechanical stability of the energy filter 25 of the ion implantation device 20 are further improved.

[0049] Figures 6A - 6E are top views of an ion implantation device 120 according to a second aspect of the present invention, where a first energy filter 125 has a first orientation and a second energy filter 225 has a second orientation. The second orientation is different from the first orientation of the first energy filter 125. The ion implantation device 120 according to the second aspect of the present invention includes a first energy filter 125 having a first orientation and a second energy filter 225 having a second orientation. The ion implantation device 120 further includes at least one support element 30 for supporting the first energy filter 125 and the second energy filter 225, and at least one support element 30 overlaps at least a part of the first energy filter 125 and at least a part of the second energy filter 225. The first orientation of the first energy filter 125 is different from the second orientation of the second energy filter 225.

[0050] As seen in FIG. 6A, the weakness between the abutting first energy filter 125 and second energy filter 225 in both the horizontal and vertical directions with respect to the top surface of the ion implantation device 120 is solved by providing at least one support element 30 for supporting the first energy filter 125 and the second energy filter 225, where at least one support element 30 overlaps at least a part of the first energy filter 125 and at least a part of the second energy filter, and the first orientation of the first energy filter 125 is different from the second orientation of the second energy filter 225. As seen in FIGS. 6C and 6D, the weakness between the abutting first energy filter 125 and second energy filter 225 can be solved by the checkerboard arrangement of the ion implantation device 120 having high stability both mechanically and thermomechanically. As seen in FIG. 6E, the weakness between the abutting first energy filter 125 and second energy filter 225 can be solved by the honeycomb arrangement of the ion implantation device 120 having high stability both mechanically and thermomechanically.

[0051] The first energy filter 125 and the second energy filter 225 of the ion implantation device 120 according to the second aspect of the present invention are made of a film having a triangular cross-sectional shape, but this type of cross-sectional shape is not a limitation of the present invention, and other cross-sectional shapes can be used. At least one support element 30 of the ion implantation device 120 according to the second aspect of the present invention is made of silicon carbide, but the material of the support element 30 is not a limitation of the present invention. At least one support element 30 can be made of the same material as, or a different material from, the first energy filter 125 and the second energy filter 225. In one non-limiting example, the first energy filter 125 and the second energy filter 225 can be made of a single material such as a silicon-on-insulator including a silicon dioxide layer of an insulating layer having a thickness of, for example, 0.2 to 1 μm sandwiched between a silicon layer (with a thickness of up to 200 μm, typically between 2 μm and 20 μm) and bulk silicon (with a thickness of about 400 μm). The structured film is made of, for example, silicon, but can also be made of silicon carbide, or other carbon-based materials, or ceramics. The first energy filter 125 and the second energy filter 225 have at least one filter layer 32 with a layer thickness having a minimum thickness of the film.

[0052] As can be seen in FIGS. 6A-6E, at least one support element 30 is configured to support a first energy filter 125 and a second energy filter 225, and at least one support element 30 overlaps at least a portion of the first energy filter 125 and at least a portion of the second energy filter 225. The support element 30 has an absorption capacity that is greater than or equal to the maximum absorption capacity of the structural elements, i.e., the maximum absorption capacity of the first energy filter 125 and the second energy filter 225. In the case of the partial transparency of the first energy filter 125 and the second energy filter 225, when at least one support element 30 overlaps at least a portion of the first energy filter 125 and at least a portion of the second energy filter 225, the functionality of the first energy filter 125 and the second energy filter 225 is impeded in the overlapping region. In the case of the partial transparency of the first energy filter 125 and the second energy filter 225, the overlapping support element 30 creates a non-active region of at least a portion of the first energy filter 125 and at least a portion of the second energy filter 225. In other words, in the case of the partial transparency of the first energy filter 125 and the second energy filter 225, the overlapping support element 30 results in the absorption of at least a portion of the energy of the ion beam 10 in the support element 30. Therefore, in the case of the partial transparency of the first energy filter 125 and the second energy filter 225, the overlapping support element 30 impedes or masks the functionality of at least a portion of the first energy filter 125 and at least a portion of the second energy filter 225. For a support element 30 of a completely transparent first energy filter 125 and second energy filter 225, discrete peaks will be added to the preferred smooth (continuous) profile. In any case, when the primary energy is high enough, the support element 30 also contributes to the resulting depth profile in the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the region division in the first energy filter 125 and the second energy filter 225.Thereby, the overall mechanical stability and thermomechanical stability of the first energy filter 125 and the second energy filter 225 of the injection device 120 can be further improved.

[0053] As can be seen in FIGS. 6A-6E, the first energy filter 125 and the second energy filter 225 are arranged in one of a square composite arrangement, a rectangular composite arrangement, a hexagonal composite arrangement, or an intersecting mesh composite arrangement. Thereby, the mechanical stability and thermomechanical stability of the first energy filter 125 and the second energy filter 225 of the injection device 120 are improved.

[0054] FIGS. 7A-7E show a flowchart of a method for manufacturing the injection devices 20, 120 according to the present invention.

[0055] According to a third aspect of the present invention, a method 300 for manufacturing the ion implantation device 20 according to the first aspect of the present invention is provided. The method 300 includes a step 301 of providing at least one filter layer 32 to the energy filter 25, a step 302 of providing at least one support element 30, a step 303 of supporting the energy filter 25 by the at least one support element 30, and a step 304 of overlapping at least a part of the energy filter 25 by the at least one support element 30. The support element 30 has an absorption capacity equal to or greater than the maximum absorption capacity of the structural element, that is, the maximum absorption capacity of the energy filter 25. In the case of partial transparency of the energy filter 25, when at least one support element 30 overlaps at least a part of the energy filter 25, the functionality of the energy filter 25 is obstructed in the overlapping region. In the case of partial transparency of the energy filter 25, the overlapping support element 30 creates an inactive region of at least a part of the energy filter 25. In other words, in the case of partial transparency of the energy filter 25, the overlapping support element 30 results in absorption of at least a part of the energy of the ion beam 10 in the support element 30. Therefore, in the case of partial transparency of the energy filter 25, the overlapping support element 30 obstructs or masks the functionality of at least a part of the energy filter 25. The support element 30 of the completely transparent energy filter 25 will add discrete peaks to the preferred smooth (continuous) profile. In any case, if the primary energy is high enough, the support element 30 also contributes to the resulting depth profile in the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the region division in the energy filter 25. Thereby, the mechanical stability and thermo-mechanical stability of the energy filter 25 of the implantation device 20 are improved.

[0056] According to a fourth aspect of the present invention, a method 400 for manufacturing the ion implantation device 120 according to the second aspect of the present invention is provided. The method includes a step 401 of providing a first energy filter 125, a step 402 of orienting the first energy filter 125 in a first orientation, a step 403 of providing a second energy filter 225, a step 404 of orienting the second energy filter 225 in a second orientation different from the first orientation of the first energy filter 125, a step 405 of supporting the first and second energy filters 125, 225 by at least one support element 30, and a step 406 of overlapping at least a part of the first energy filter 125 and at least a part of the second energy filter 225 by at least one support element 30. The support element 30 has an absorption capacity equal to or greater than the maximum absorption capacity of the structural elements, that is, the maximum absorption capacity of the first energy filter 125 and the second energy filter 225. In the case of the partial transparency of the first energy filter 125 and the second energy filter 225, when the at least one support element 30 overlaps at least a part of the first energy filter 125 and at least a part of the second energy filter 225, the functionality of the first energy filter 125 and the second energy filter 225 is hindered in the overlapping region. In the case of the partial transparency of the first energy filter 125 and the second energy filter 225, the overlapping support element 30 creates non-active regions of at least a part of the first energy filter 125 and at least a part of the second energy filter 225. In other words, in the case of the partial transparency of the first energy filter 125 and the second energy filter 225, the overlapping support element 30 results in the absorption of at least a part of the energy of the ion beam 10 in the support element 30. Therefore, in the case of the partial transparency of the first energy filter 125 and the second energy filter 225, the overlapping support element 30 hinders or masks the functionality of at least a part of the first energy filter 125 and at least a part of the second energy filter 225.The support elements 30 of the fully transparent first energy filter 125 and the second energy filter 225 will add discrete peaks to a preferably smooth (continuous) profile. In any case, if the primary energy is high enough, the support element 30 also contributes to the resulting depth profile in the substrate. This contribution consists of discrete energies, which contribute to the total amount of the profile according to the area division in the first energy filter 125 and the second energy filter 225. The overall mechanical stability and thermo-mechanical stability of the first energy filter 125 and the second energy filter 225 of the implantation device 120 can be further improved.

[0057] In a further aspect, methods 300, 400 for manufacturing the ion implantation devices 20, 120 of the third or fourth aspect of the present invention can be used in one of the sequences of screen printing, multilayer processing, lithographic patterning processing, and etching processing.

[0058] According to a fifth aspect of the present invention, a method 500 for manufacturing the ion implantation devices 20, 120 according to the first and second aspects of the present invention includes a step 501 of providing a silicon-on-insulator (SOI) wafer as a substrate material having a first surface and a second surface, wherein the thickness of the buried oxide (BOX) varies between 30 nm and 1.5 μm; a step 502 of applying a first mask material layer and a second mask material layer for masking wet chemical potassium hydroxide (KOH) etching or tetramethylammonium hydroxide (TMAH) etching to the first surface and the second surface of the SOI wafer; a step 503 of patterning the first mask material layer and the second mask material layer on the first surface and the second surface by using first and second lithography processing steps and at least one wet or dry etching pattern forming step; a step 504 of cleaning the first surface and the second surface after patterning the mask material layer; a step 505 of performing a first wet chemical etching on the first surface or the second surface by using an etching solution of KOH or TMAH; a step 506 of performing a second wet chemical etching on the first surface or the second surface by using an etching solution of KOH or TMAH; a step 507 of wet chemical etching the first surface or the second surface so that the etching is stopped at the BOX layer; a step 508 of removing the BOX layer; and a step 509 of removing the mask layer on the first surface and the second surface.

[0059] In one aspect of the method 500, a first protective layer is applied to the first surface or the second surface to prevent etching. In a further aspect of the method 500, a second protective layer is applied to the first surface or the second surface to prevent etching of the first surface or the second surface.

[0060] In one aspect of the method 500, the thickness of a typical SOI layer is 6 μm, 10 μm, 17 μm, 25 μm, 50 μm, or 100 μm.

[0061] In one aspect of method 500, after hard mask formation, a protective layer is applied on the front side and backside etching is performed first. Next, the protective layer is removed. The protective layer is deposited on the backside. Front side KOH or TMAH etching is performed. All masks, protective layers, and BOX layers are removed.

[0062] In one aspect of method 500, for example, the maximum profile length in silicon is selected to be 16 μm, and the SOI layer is selected to be from 16 μm + substrate, that is, from 300 nm to a maximum of 1000 nm. When the target implant material is a material other than silicon, the discrepancy in stopping power as a function of ion energy needs to be considered, and the required thickness of the SOI layer needs to be changed accordingly.

[0063] According to a sixth aspect of the present invention, a method 600 for manufacturing the ion implantation devices 20, 120 according to the first and second aspects of the present invention includes a step 601 of providing a bulk material slab, where the thickness of the bulk material slab is at least the height of the support element 30, step 601, and a step 602 of continuously removing the material by laser etching or a mechanical corrosion device, where the removal 602 is an increment from several tens of nanometers to a maximum of several micrometers per step, involves several removal steps for a given structure, and the continuous removal is performed according to the structure of the energy filters 25, 125 and the predetermined 3D layout of the support element 30.

[0064] In one aspect of method 600, a bulk material slab of a suitable size (circular, square, or rectangular from 2x2 cm to a maximum of 40x40 cm) is provided, and the thickness of the material slab is at least h supp plus the thickness of at least one support element 30. The material slab is made of silicon, silicon carbide, glass, glassy material, or carbon.

[0065] In one aspect of method 600, optionally, polishing / etching of the substrate to a desired final thickness can be provided if required and / or needed.

[0066] According to a seventh aspect of the present invention, a method 700 for manufacturing the ion implantation devices 20, 120 according to the first and second aspects of the present invention includes a step 701 of providing a substrate or a base layer, a step of depositing a first support layer 31 and a first filter layer 32, and a step 702 of patterning the first support layer 31 and the first filter layer 32 using an appropriate etching technique such as masked etching or continuous etching by a laser or ion beam etching device. The method further includes a step of continuously depositing and patterning a plurality of the first support layer 31 and the first filter layer 32, and a step of removing, polishing, or etching the substrate or the base layer to a desired substrate layer thickness or base layer thickness.

[0067] In one aspect of the method 700, a substrate or a base layer of an appropriate size (circular, square, or rectangular from 2x2 cm to a maximum of 40x40 cm) is provided.

[0068] In one aspect of the method 700, the layers are patterned after deposition using an appropriate etching technique such as masked etching (photolithography and wet or dry etching) or continuous etching by a laser or ion beam etching device. Alternatively, the layers are patterned during deposition, for example, by screen printing, or by a patterning process of molding or imprinting. The thickness of the deposited layer is between several hundred nm and several micrometers. The manufacturing may involve a sintering step after each deposition step, or after a plurality of deposition steps. The layer material is silicon, silicon carbide, glass, glassy material, or carbon. The layer material is a high-density material, or a material containing voids (10%, 30%, or 50% voids). The layer material of reference numeral 32 may be different from the material for layer 31. The thickness of the deposited layer may be different between layer 32 and layer 31. The substrate is removed, or the substrate is polished / etched to a desired base layer thickness.

[0069] According to an eighth aspect of the present invention, a method 800 for manufacturing the ion implantation devices 20, 120 according to the first and second aspects of the present invention includes a step 801 of providing a separation structure of the energy filters 25, 125 and the support element 30, and a step 802 of applying a bonding layer or an adhesive layer to achieve a permanent and thermomechanically stable connection between the energy filters 25, 125 and the support element 30.

[0070] The support elements 30 can be periodically provided on the back or the front of the energy filters 25, 125. These support elements 30 are characterized, for example, by being formed from a substrate wafer material and being designed as a rectangular or square grid. The arrangement of the triangular energy filter elements 25, 125 on the front is configured such that all trench elements are arranged parallel to each other. In the present invention, the individual elements of the energy filter elements 25, 125 formed in trenches are both "horizontal" and "vertical", or at an arbitrary angle to each other. In this way, the surface of the energy filter elements 25, 125 decomposes into individual elements that can be arranged in any desired manner relative to each other.

Description of the reference numerals

[0071] 1 Energy filter assembly 5 Ion beam source 10 Ion beam 20 Ion implantation device 21 Silicon layer 22 Silicon dioxide layer 23 Bulk silicon 25 Energy filter 27 Filter frame 26 Substrate material 30 Support element 31 Support layer 32 Filter layer 120 Ion implantation device 125 First energy filter 225 Second energy filter

Claims

1. An energy filter (25) with at least one filter layer (32), and at least one support element (30) for supporting the energy filter (25), the at least one support element (30) overlapping at least a part of the energy filter (25). Comprising The at least one support element (30) has a first height (h ｓｕｐｐ ), the energy filter (25) has a maximum height (h ｍａｘ ), and the first height (h ｓｕｐｐ ) of the at least one support element (30) is at least the same as the maximum height (h ｍａｘ ) of the energy filter (25). The at least one support element (30) has a first width (d ｓｕｐｐ ) and the energy filter (25) has a minimum width (d ｍｉｎ ), the minimum width (d ｍｉｎ ) of the energy filter (25) being provided in a stepped manner and being the technical minimum width of the energy filter (25), and the first width (d ｓｕｐｐ ) of the at least one support element (30) being at least as large as the minimum width (d ｍｉｎ ) of the energy filter (25), ion implantation device (20).

2. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) is a back surface support element.

3. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) is a front surface support element.

4. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) comprises at least one support layer (31).

5. The minimum width (d ｍｉｎ ) of the energy filter (25) is ±0.3 μm, ±0.5 μm, or ±0.8 μm, and the ion implantation device (20) according to claim 1.

6. The first width (d ｓｕｐｐ ) of the at least one support element (30) is at least 10%, 20%, or 50% greater than the minimum width (d ｍｉｎ ) of the energy filter (25), the ion implantation device (20) according to claim 1.

7. the first width (d of the at least one support element (30) ｓｕｐｐ ) is at least twice, five times, or ten times greater than the minimum width (d ｍｉｎ ) of the energy filter (25), the ion implantation device (20) according to claim 1.

8. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) is made of silicon carbide.

9. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) is made of the same material as the energy filter (25).

10. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) is made of a material different from the energy filter (25).

11. The ion implantation device (20) according to claim 1, wherein the at least one support element (30) has an absorption capacity greater than the maximum absorption capacity of the energy filter (25).

12. A first energy filter (125) with a first orientation, A second energy filter (225) with a second orientation, And at least one support element (30) for supporting the first and second energy filters (125, 225), the at least one support element (30) overlapping at least a part of the first energy filter (125) and at least a part of the second energy filter (225), and the first orientation of the first energy filter (125) being different from the second orientation of the second energy filter (225). An ion implantation device (120) comprising

13. The ion implantation device (120) according to claim 12, wherein the first energy filter (125) and the second energy filter (225) are arranged in one of a square composite arrangement, a rectangular composite arrangement, a hexagonal composite arrangement, or a cross-grid composite arrangement.

14. The ion implantation device (120) according to claim 12, wherein the at least one support element (30) has an absorption capacity greater than or equal to the maximum absorption capacity of the first energy filter (125) and the second energy filter (225).

15. A method (300) for manufacturing an ion implantation device (20), comprising: providing (301) at least one filter layer (32) on an energy filter (25); providing (302) at least one support element (30); supporting (303) the energy filter (25) by the at least one support element (30); overlaying (304) at least a part of the energy filter (25) by the at least one support element (30); and wherein the at least one support element (30) has a first height (h_supp), the energy filter (25) has a maximum height (h_max), and the first height (h_supp) of the at least one support element (30) is at least the same as the maximum height (h_max) of the energy filter (25); wherein the at least one support element (30) has a first width (d_supp), the energy filter (25) has a minimum width (d_min), the minimum width (d_min) of the energy filter (25) is provided in a stepped manner and is the technical minimum width of the energy filter (25), and the first width (d_supp) of the at least one support element (30) is at least the same as the minimum width (d_min) of the energy filter (25). Method (300).

16. A method (400) for manufacturing an ion implantation device (120), comprising: providing (401) a first energy filter (125); orienting (402) the first energy filter (125) in a first orientation; providing (403) a second energy filter (225); Orienting the second energy filter (225) in a second orientation different from the first orientation of the first energy filter (125) (404); Supporting the first and second energy filters (125, 225) by at least one support element (30) (405); Overlapping at least a portion of the first energy filter (125) and at least a portion of the second energy filter (225) by the at least one support element (30) (406); A method (400) comprising the above steps.

17. Use in one of the orders of screen printing, multilayer processing, lithographic patterning processing, and etching processing of a method (300, 400) for manufacturing the ion implantation device (20, 120) according to Claim 1.

18. Use in one of the orders of screen printing, multilayer processing, lithographic patterning processing, and etching processing of a method (300, 400) for manufacturing the ion implantation device (20, 120) according to Claim 12.

19. A method (500) for manufacturing an ion implantation device (20, 120), comprising: Providing a silicon-on-insulator (SOI) wafer as a substrate material having a first surface and a second surface, wherein the thickness of the buried oxide (BOX) varies between 30 nm and 1.5 µm (501); Applying a first mask material layer and a second mask material layer for masking wet chemical potassium hydroxide (KOH) etching or tetramethylammonium hydroxide (TMAH) etching to the first surface and the second surface of the SOI wafer (502); Forming patterns of the first mask material layer and the second mask material layer on the first surface and the second surface by using first and second lithography processing steps and at least one wet or dry etching patterning step (503); Cleaning the first surface and the second surface after the pattern formation of the mask material layer (504); Performing a first wet chemical etching on the first surface or the second surface using an etching solution of KOH or TMAH (505); Step (506) of second wet chemical etching of the first surface or the second surface using an etching solution of KOH or TMAH Step (507) of wet chemical etching of the first surface and the second surface such that the etching is stopped at the BOX layer Step (508) of removing the BOX layer Step (509) of removing the mask layer on the first surface and the second surface Method (500) comprising the above

20. The method (500) according to claim 19, comprising the step of applying a first protective layer to the first surface or the second surface to prevent etching

21. The method (500) according to claim 19, comprising the step of applying a second protective layer to the first surface or the second surface to prevent etching of the first surface or the second surface

22. A method (600) for manufacturing an ion implantation device (20, 120), comprising: Step (601) of providing a bulk material slab, wherein the thickness of the bulk material slab is at least that of the height (h ｓｕｐｐ ) of at least one support element (30), step (601); Step (602) of continuously removing the material by a laser etching or mechanical corrosion device, wherein the removal is an increment from several tens of nm to a maximum of several micrometers per step, involves several removal steps for a given structure, and the continuous removal is performed according to a predetermined 3D layout of an energy filter structure (25, 125, 225) and at least one support element (30) Method (600) comprising the above

23. A method (700) for manufacturing an ion implantation device (20, 120), comprising: Step (701) of providing a substrate or a base layer Step (702) of depositing a first support layer (31) and a first filter layer (32) Step (703) of patterning the first support layer (31) and the first filter layer (32) using an appropriate etching technique such as masked etching or continuous etching by a laser or ion beam etching device Steps of continuously depositing (702) and patterning (703) a plurality of the first support layer (31) and the first filter layer (32) Step (704) of removing, polishing, or etching the substrate or the base layer to a desired substrate layer thickness or base layer thickness Method (700) comprising the above

24. A method (800) for manufacturing an ion implantation device (20, 120), comprising: providing a separation structure for an energy filter (25, 125, 225) and at least one support element (30) (step 801); applying a bonding layer or an adhesive layer to achieve a permanent and thermomechanically stable connection between the energy filter (25, 125, 225) and the at least one support element (30) (step 802). The method (800) as described above.

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