Components for semiconductor manufacturing equipment

Abstract

The wafer mounting table 10 includes a ceramic plate 20 having a wafer mounting surface 21 on its upper surface and incorporating electrostatic electrodes 22, a base plate 30 provided on the lower surface 23 of the ceramic plate 20 and incorporating refrigerant flow paths 32, base plate through-holes 34 provided between adjacent refrigerant flow paths 32 and penetrating the base plate 30 in the vertical direction, insulating tubes 50 provided in the base plate through-holes 34 and fixed, and bottomed holes 24 of the ceramic plate provided in the lower surface of the ceramic plate 20 and communicating with the inside of the insulating tubes 50. The wall thickness t1 of the insulating tubes 50 continuously changes along the circumferential direction of the insulating tubes 50.

Description

Technical Field

[0001] The present invention relates to a member for a semiconductor manufacturing apparatus.

Background Art

[0002] Conventionally, a member for a semiconductor manufacturing apparatus has been known, which includes a ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, a base plate provided on the lower surface of the ceramic plate, a ceramic plate hole penetrating the ceramic plate in the vertical direction, a base plate through hole penetrating the base plate in the vertical direction, and an insulating tube inserted into the base plate through hole. In Patent Document 1, it is desirable to align the central axis of the insulating tube with the central axis of the base plate through hole, but in practice, they may deviate, and it has been pointed out that when such a deviation occurs, the degree of heat extraction becomes non-uniform.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, when providing a base plate through hole between adjacent refrigerant flow paths in the base plate, there has been a demand to deliberately design the degree of heat extraction in the vicinity directly above the ceramic plate hole on the wafer placement surface to be non-uniform.

[0005] The present invention has been made to solve the above-described problems, and a main object thereof is to provide a structure suitable for controlling and designing the degree of heat extraction in the vicinity directly above the ceramic plate hole on the wafer placement surface to be non-uniform.

Means for Solving the Problems

[0006] [1] The first member for a semiconductor manufacturing apparatus of the present invention includes a ceramic plate having a wafer placement surface on its upper surface and incorporating electrodes, a base plate provided on the lower surface of the ceramic plate and incorporating a refrigerant flow path, a base plate through-hole provided between adjacent refrigerant flow paths and penetrating the base plate in the vertical direction, an insulating tube provided in the base plate through-hole and fixed, a ceramic plate hole that opens on the lower surface of the ceramic plate and is provided so as to communicate with the inside of the insulating tube, and is a member for a semiconductor manufacturing apparatus comprising the wall thickness of the insulating tube continuously changes along the circumferential direction of the insulating tube. It is such.

[0007] In this member for a semiconductor manufacturing apparatus, the wall thickness of the insulating tube continuously changes along the circumferential direction of the insulating tube. Therefore, the thermal resistance from the central axis of the ceramic plate hole to the inner peripheral surface of the base plate through-hole continuously changes along the circumferential direction of the insulating tube. And the heat extraction is better where the thermal resistance is low compared to where the thermal resistance is high. Therefore, this member for a semiconductor manufacturing apparatus is suitable for designing by controlling the degree of heat extraction in the vicinity directly above the ceramic plate hole on the wafer placement surface so as not to be uniform.

[0008] Note that in this specification, "upper" and "lower" do not represent an absolute positional relationship but a relative positional relationship. Therefore, depending on the orientation of the member for a semiconductor manufacturing apparatus, "upper" and "lower" may become "lower" and "upper", or "left" and "right", or "front" and "rear".

[0009] [2] In the first member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in [1] above), the center of the inner circumferential circle of the insulating tube may be eccentric from the center of the outer circumferential circle of the insulating tube. By doing so, the wall thickness of the insulating tube can be relatively easily continuously changed along the circumferential direction of the insulating tube.

[0010] [3] The second member for a semiconductor manufacturing apparatus of the present invention is a ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, a base plate provided on the lower surface of the ceramic plate and incorporating a refrigerant flow path, a base plate through-hole provided between adjacent refrigerant flow paths and penetrating the base plate in the vertical direction, an insulating tube provided in the base plate through-hole and fixed, a ceramic plate hole that opens on the lower surface of the ceramic plate and is provided so as to communicate with the inside of the insulating tube, an insulating tube inner peripheral surface adhesive layer provided so as not to cover the ceramic plate hole and bonding the inner peripheral surface of the insulating tube and the lower surface of the ceramic plate, A member for a semiconductor manufacturing apparatus comprising wherein the radial length of the insulating tube of the insulating tube inner peripheral surface adhesive layer varies along the circumferential direction of the insulating tube. is the one.

[0011] In this member for a semiconductor manufacturing apparatus, the radial length of the insulating tube of the insulating tube inner peripheral surface adhesive layer varies along the circumferential direction of the insulating tube. Therefore, the thermal resistance from the central axis of the ceramic plate hole to the inner peripheral surface of the base plate through-hole varies along the circumferential direction of the insulating tube. And the heat extraction is better where the thermal resistance is low compared to where the thermal resistance is high. Therefore, this member for a semiconductor manufacturing apparatus is suitable for designing while controlling the degree of heat extraction in the vicinity directly above the ceramic plate hole on the wafer placement surface to be non-uniform.

[0012] [4] In the second member for a semiconductor manufacturing apparatus of the present invention (the member for a semiconductor manufacturing apparatus described in [3] above), the wall thickness of the insulating tube may be constant along the circumferential direction of the insulating tube, and the central axis of the insulating tube may be eccentric with respect to the central axis of the ceramic plate hole. By doing so, the radial length of the insulating tube inner peripheral surface adhesive layer can be relatively easily changed along the circumferential direction of the insulating tube.

[0013] [5] In the first and second members for semiconductor manufacturing apparatuses of the present invention (the member for a semiconductor manufacturing apparatus according to any one of [1] to [4] above), the outer peripheral surface of the insulating tube may be adhered to the inner peripheral surface of the base plate through-hole via an insulating tube outer peripheral surface adhesive layer, and the thickness of the insulating tube outer peripheral surface adhesive layer may vary along the circumferential direction of the insulating tube. By doing so, the thermal resistance from the central axis of the ceramic plate hole to the inner peripheral surface of the base plate through-hole can also be varied along the circumferential direction of the insulating tube by the insulating tube outer peripheral surface adhesive layer.

[0014] [6] In the first and second members for semiconductor manufacturing apparatuses of the present invention (the member for a semiconductor manufacturing apparatus according to any one of [1] to [5] above), the base plate through-hole may be provided between the adjacent refrigerant flow paths, and the ceiling surface of one of the adjacent refrigerant flow paths may be higher than that of the other. In such a case, since the refrigerant flow path with the higher ceiling surface is more likely to extract heat from the ceramic plate than the lower one among the adjacent refrigerant flow paths, the temperature of the wafer placement surface gradually increases from the position facing the refrigerant flow path with the higher ceiling surface to the position facing the refrigerant flow path with the lower ceiling surface. Therefore, it is preferable to design the degree of heat extraction in the vicinity directly above the ceramic plate hole on the wafer placement surface to conform to this tendency, and the significance of applying the present invention is high.

[0015] For example, when the wall thickness of the insulating tube varies along the circumferential direction of the insulating tube, the wall thickness of the insulating tube may be the thickest at the position closest to the refrigerant flow path with the higher ceiling surface, and gradually becomes thinner as it approaches the refrigerant flow path with the lower ceiling surface, and may be the thinnest at the position closest to the refrigerant flow path with the lower ceiling surface. Further, when the radial length of the insulating tube inner peripheral surface adhesive layer varies along the circumferential direction of the insulating tube, the length may be the shortest at the position closest to the refrigerant flow path with the higher ceiling surface, and gradually becomes longer as it approaches the refrigerant flow path with the lower ceiling surface, and may be the longest at the position closest to the refrigerant flow path with the lower ceiling surface.

[0016] [7] In the first and second members for semiconductor manufacturing apparatuses of the present invention (the member for semiconductor manufacturing apparatus described in any one of [1] to [6] above), the ceramic plate hole may be a bottomed hole reaching the electrode from the lower surface of the ceramic plate, or may be a through hole penetrating the ceramic plate in the vertical direction. In the former case, a power supply member may be electrically connected to the inside of the insulating tube and the bottomed hole in the electrode. In the latter case, the through hole may be used as a gas hole for supplying a heat transfer gas to the lower surface of the wafer, or may be used as a lift pin hole for inserting a lift pin for vertically moving the wafer with respect to the wafer mounting surface.

Brief Description of the Drawings

[0017]

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Best Mode for Carrying Out the Invention

[0018] [First Embodiment] A preferred embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a wafer mounting table 10, FIG. 2 is a sectional view taken along line A-A of FIG. 1 (longitudinal sectional view), FIG. 3 is a partially enlarged view of FIG. 2 (an enlarged view within the frame indicated by the two-dot chain line), and FIG. 4 is a sectional view taken along line B-B of FIG. 3 (partially enlarged cross-sectional view).

[0019] The wafer mounting table 10 is an example of a member for a semiconductor manufacturing apparatus of the present invention. As shown in FIG. 2, it includes a ceramic plate 20, a base plate 30, a bonding layer 40, a base plate through-hole 34, an insulating tube 50, and a power supply member 70.

[0020] The ceramic plate 20 is a ceramic disk (for example, with a diameter of 300 mm and a thickness of 5 mm) such as an alumina sintered body or a aluminum nitride sintered body. The upper surface of the ceramic plate 20 serves as a wafer mounting surface 21 for mounting the wafer W. The ceramic plate 20 incorporates an electrostatic electrode 22. Although not shown in the figure, an annular seal band is formed along the outer edge on the wafer mounting surface 21 of the ceramic plate 20, and a plurality of circular small protrusions are formed on the entire inner surface of the seal band. The electrostatic electrode 22 is a planar mesh electrode and is connected to an external DC power supply (not shown) via the power supply member 70. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is adsorbed and fixed to the wafer mounting surface 21 by the electrostatic adsorption force, and when the application of the DC voltage is released, the adsorption and fixation of the wafer W to the wafer mounting surface 21 is released.

[0021] The base plate 30 is a disk with good electrical conductivity and thermal conductivity (for example, a disk with the same diameter as or larger than that of the ceramic plate 20 and a thickness of 25 mm). Inside the base plate 30, a refrigerant flow path 32 through which the refrigerant circulates is formed. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid and preferably has electrical insulation properties. Examples of the electrically insulating liquid include fluorine-based inert liquids. As shown in FIG. 1, the refrigerant flow path 32 is formed in a spiral shape in one stroke from one end (inlet 32in) to the other end (outlet 32out) over the entire base plate 30 in a plan view. The refrigerant flow path 32 has two flow paths 32H and 32L with different ceiling surface 32a positions. The flow path 32H is provided in the section from the inlet 32in to the middle position 32m (for example, about two turns), and the flow path 32L is provided in the section from the middle position 32m to the outlet 32out. The height of the ceiling surface 32a around the middle position 32m of the refrigerant flow path 32 may be inclined from the flow path 32H toward the flow path 32L. A supply port and a recovery port of an external refrigerant device (not shown) are respectively connected to the inlet 32in and the outlet 32out of the refrigerant flow path 32. The refrigerant supplied from the supply port of the external refrigerant device to the inlet 32in of the refrigerant flow path 32 returns from the outlet 32out of the refrigerant flow path 32 to the recovery port of the external refrigerant device after passing through the refrigerant flow path 32, and after being temperature-adjusted, it is supplied again from the supply port to the inlet 32in of the refrigerant flow path 32. The base plate 30 is connected to a high-frequency (RF) power supply and is also used as an RF electrode.

[0022] Examples of the material of the base plate 30 include, for example, a metal material, a composite material of metal and ceramic, etc. Examples of the metal material include Al, Ti, Mo, or their alloys, etc. Examples of the composite material of metal and ceramic include a metal matrix composite (MMC), a ceramic matrix composite (CMC), etc. Specific examples of such composite materials include a material containing Si, SiC, and Ti (also referred to as SiSiCTi), a material obtained by impregnating a SiC porous body with Al and / or Si, a composite material of Al2O3 and TiC, etc. As the material of the base plate 30, it is preferable to select a material having a coefficient of thermal expansion close to that of the ceramic plate 20. When the material of the ceramic plate 20 is alumina, the material of the base plate 30 is preferably pure Ti or an α-β Ti alloy. This is because the coefficients of thermal expansion of pure Ti and α-β Ti alloy are close to that of alumina. The base plate 30 may be formed of a material having a lower thermal conductivity than Al, or may be formed of a material having a lower thermal conductivity than the material of the ceramic plate 20 (for example, alumina). Examples of such materials include, for example, Ti-containing materials typified by pure Ti and α-β Ti. When the material of the base plate 30 is a Ti-containing material, the effects of the present invention are high. The thermal conductivity of the base plate 30 may be 50 W / mK or less, or may be 5 to 20 W / mK. For example, the thermal conductivity of pure Ti is 17 W / mK, and the thermal conductivity of an α-β Ti alloy is 7.5 W / mK. Note that the thermal conductivity of Al is 150 to 200 W / mK.

[0023] The bonding layer 40 is a resin adhesive layer here, and joins the lower surface of the ceramic plate 20 and the upper surface of the base plate 30. Examples of the material of the resin adhesive layer include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The bonding layer 40 may be one in which a filler is contained in the insulating resin. The filler preferably has a higher thermal conductivity than the insulating resin of the bonding layer 40, and may be, for example, alumina, aluminum nitride, etc.

[0024] The base plate through-hole 34 is a substantially cylindrical hole that penetrates the base plate 30 in the vertical direction and is provided between adjacent refrigerant flow paths 32. One of the adjacent refrigerant flow paths 32 is a flow path 32H with a high ceiling surface 32a, and the other is a flow path 32L with a low ceiling surface 32a. The base plate through-hole 34 communicates with the bonding layer through-hole 44. The bonding layer through-hole 44 is a substantially cylindrical hole that penetrates the bonding layer 40 in the vertical direction.

[0025] The insulating tube 50 is housed in the base plate through-hole 34 and the bonding layer through-hole 44. The insulating tube 50 is a substantially cylindrical member made of an electrically insulating material (for example, the same material as the ceramic plate 20) and has an insulating tube through-hole 54 that penetrates the insulating tube 50 in the vertical direction along the central axis of the insulating tube 50. The wall thickness t1 (radial length) of the insulating tube 50 continuously changes along the circumferential direction of the insulating tube 50. Specifically, the center of the inner peripheral circle (insulating tube through-hole 54) of the insulating tube 50 is eccentric from the center of the outer peripheral circle of the insulating tube 50, so that the wall thickness t1 of the insulating tube 50 continuously changes. Also, the wall thickness t1 of the insulating tube 50 is the thickest at the position closest to the flow path 32H, gradually becomes thinner as it approaches the flow path 32L, and is the thinnest at the position closest to the flow path 32L.

[0026] As shown in FIG. 3, the insulating tube 50 is adhered to the lower surface 23 of the ceramic plate 20 and the inner peripheral surface 34b of the base plate through hole 34 via an adhesive layer 60 containing resin. The upper end portion of the base plate through hole 34 has a tapered surface 34c with a chamfered C shape. The adhesive layer 60 has an insulating tube upper surface adhesive portion 61 that adheres the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and an insulating tube outer peripheral surface adhesive portion 62 that is continuous with the insulating tube upper surface adhesive portion 61 and adheres the inner peripheral surface 34b of the base plate through hole 34 and the outer peripheral surface 50b of the insulating tube 50. The insulating tube outer peripheral surface adhesive portion 62 is provided so as to reach a position lower than the ceiling surface 32a of the flow path 32L of the refrigerant flow path 32 from the lower surface 23 of the ceramic plate 20. The thickness t2 (radial length) of the insulating tube outer peripheral surface adhesive portion 62 is constant along the circumferential direction of the insulating tube 50. Examples of the material of the adhesive layer 60 include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The adhesive layer 60 may contain a filler in the insulating resin. The filler preferably has a higher thermal conductivity than the insulating resin of the adhesive layer 60, and may be, for example, alumina or aluminum nitride. The adhesive layer 60 may have a higher thermal conductivity than the bonding layer 40.

[0027] The power supply member 70 is, for example, a metal rod. The metal used for the power supply member 70 is, for example, W, Mo, Ni, etc., and it is preferable that the thermal expansion coefficient of the metal is close to the thermal expansion coefficient of the ceramic plate 20. As shown in FIG. 3, the power supply member 70 is inserted into the insulating tube through hole 54 and the bottomed hole 24 of the ceramic plate, and is electrically connected to the electrostatic electrode 22 exposed at the bottom of the bottomed hole 24 of the ceramic plate to supply power to the electrostatic electrode 22. The bottomed hole 24 of the ceramic plate is a substantially cylindrical hole provided from the lower surface 23 of the ceramic plate 20 to the electrostatic electrode 22, and has a smaller diameter than the insulating tube through hole 54. The central axis of the bottomed hole 24 of the ceramic plate coincides with the central axis of the base plate through hole 34. The power supply member 70 is electrically insulated from the base plate 30 by the insulating tube 50 disposed in the base plate through hole 34 and the bonding layer through hole 44. Incidentally, instead of being constituted by a single metal rod, the power supply member 70 may be formed by connecting a columnar upper metal terminal and a columnar lower metal terminal with a flexible metal wire.

[0028] Next, among the manufacturing methods of the wafer mounting table 10, the step of bonding the insulating tube 50 will be described with reference to FIG. 5. FIG. 5 is an explanatory diagram of this step. In FIGS. 5A to 5D, the wafer mounting surface 21 of the ceramic plate 20 is oriented downward. Further, FIGS. 5A to 5D are partial enlarged views in which the peripheral portion of the base plate through hole 34 is enlarged.

[0029] First, a joined body in which the ceramic plate 20 and the base plate 30 are joined by the bonding layer 40 is prepared (FIG. 5A). In this joined body, the electrostatic electrode 22 is embedded in the ceramic plate 20. Further, in this joined body, the power supply member 70 is inserted into the bottomed hole 24 of the ceramic plate through the base plate through hole 34 and the bonding layer through hole 44, and is electrically connected to the electrostatic electrode 22. The central axis of the power supply member 70 coincides with the central axes of the base plate through hole 34, the bonding layer through hole 44, and the bottomed hole 24 of the ceramic plate.

[0030] Next, an adhesive 60x is disposed between the tapered surface 34c of the base plate through-hole 34 and the lower surface 23 of the ceramic plate 20, and the insulating tube 50 is inserted into the base plate through-hole 34 such that the upper surface 50a of the insulating tube 50 faces the adhesive 60x (FIG. 5B). At this time, the insulating tube 50 is disposed such that the thickest portion of the wall thickness t1 of the insulating tube 50 is closest to the flow path 32H and the thinnest portion of the wall thickness t1 is closest to the flow path 32L.

[0031] Subsequently, when the insulating tube 50 is pushed toward the ceramic plate 20 side, the adhesive 60x spreads between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50 and between the inner peripheral surface 34b of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50 (FIG. 5C).

[0032] Furthermore, when the insulating tube 50 is pushed toward the ceramic plate 20 side, the adhesive 60x is filled between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50 and climbs between the inner peripheral surface 34b of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50. In this state, when the adhesive 60x solidifies, the insulating tube 50 is fixed to the ceramic plate 20 and the base plate 30 via the adhesive layer 60. Thus, the wafer mounting stage 10 is obtained (FIG. 5D).

[0033] Next, a usage example of the wafer mounting stage 10 configured in this way will be described. First, with the wafer mounting stage 10 installed in a chamber (not shown), the wafer W is placed on the wafer mounting surface 21. Then, the inside of the chamber is depressurized by a vacuum pump to adjust to a predetermined degree of vacuum, a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, and the wafer W is adsorbed and fixed to the wafer mounting surface 21. Next, the inside of the chamber is set to a reaction gas atmosphere at a predetermined pressure (for example, several tens to several hundreds of Pa), and in this state, an RF voltage is applied between an upper electrode (not shown) provided on the ceiling portion inside the chamber and the base plate 30 of the wafer mounting stage 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A refrigerant is circulated in the refrigerant flow path 32 of the base plate 30 as appropriate.

[0034] When the wafer W is processed by plasma in this way, the heat input by the plasma is removed by the base plate 30, and the wafer mounting surface 21 is controlled to have a desired temperature distribution. A high-flow channel 32H with a high ceiling surface 32a is provided on the outer peripheral side of the wafer mounting table 10, and a low-flow channel 32L with a low ceiling surface 32a is provided on the inner peripheral side. Therefore, the heat removal by the refrigerant is greater on the outer peripheral side than on the inner peripheral side of the wafer mounting surface 21. Also, in the region of the wafer mounting surface 21 that faces the boundary portion between the adjacent high-flow channel 32H and low-flow channel 32L (the region directly above the boundary portion), the temperature gradually increases from the high-flow channel 32H side toward the low-flow channel 32L side. Since the base plate through-hole 34 is provided at the boundary portion between the adjacent high-flow channel 32H and low-flow channel 32L, the region directly above the ceramic plate through-hole 24 and the base plate through-hole 34 (the region directly above the hole) on the wafer mounting surface 21 is likely to have a temperature distribution different from that of its surroundings.

[0035] However, in the first embodiment, the wall thickness t1 of the insulating tube 50 continuously changes along the circumferential direction of the insulating tube 50. Therefore, the thermal resistance from the central axis of the bottomed hole 24 of the ceramic plate to the inner peripheral surface of the base plate through-hole 34 continuously changes along the circumferential direction of the insulating tube 50. And heat removal is better in the areas with low thermal resistance than in the areas with high thermal resistance. Also, the wall thickness t1 of the insulating tube 50 is the thickest at the position closest to the high-flow channel 32H, gradually becomes thinner as it approaches the low-flow channel 32L, and is the thinnest at the position closest to the low-flow channel 32L. Therefore, the region directly above the hole on the wafer mounting surface 21 also gradually becomes hotter from the high-flow channel 32H side toward the low-flow channel 32L side, similar to the region directly above the boundary portion. A temperature contour image of the wafer mounting surface 21 at this time is shown in FIG. 6. Thus, in the first embodiment, the region directly above the hole on the wafer mounting surface 21 has a temperature distribution almost the same as that of the region directly above the boundary portion.

[0036] Here, as a comparative form, FIG. 7 is exemplified. The wafer mounting stage 310 in the comparative form is the same as the above-described embodiment except that an insulating tube 350 is used instead of the insulating tube 50 in the above-described embodiment. In FIG. 7, the same components as those in the first embodiment are denoted by the same reference numerals. The wall thickness t1 of the insulating tube 350 is constant along the circumferential direction of the insulating tube 350. Specifically, the center of the inner circumferential circle (insulating tube through-hole 354) of the insulating tube 350 coincides with the center of the outer circumferential circle of the insulating tube 350. In this case, in the region directly above the hole on the wafer mounting surface 21, a distribution is shown in which the vicinity of the center is the hottest and gradually becomes cooler toward the periphery. A temperature contour image of the wafer mounting surface 21 at this time is shown in FIG. 8. Thus, in the comparative form, the region directly above the hole on the wafer mounting surface 21 has a temperature distribution different from that of the region directly above the boundary portion, and becomes a temperature-specific region.

[0037] According to the wafer mounting stage 10 of the first embodiment described in detail above, since the wall thickness t1 of the insulating tube 50 continuously changes along the circumferential direction of the insulating tube 50, it is suitable for controlling and designing the degree of heat extraction in the vicinity directly above the bottomed hole 24 of the ceramic plate on the wafer mounting surface 21 so as not to be uniform.

[0038] Also, the center of the inner circumferential circle of the insulating tube 50 is eccentric from the center of the outer circumferential circle of the insulating tube 50. Therefore, it is possible to relatively easily continuously change the wall thickness t1 of the insulating tube 50 along the circumferential direction of the insulating tube 50.

[0039] Furthermore, the base plate through-hole 34 is provided between adjacent refrigerant flow paths 32 in the base plate 30, and the height of the ceiling surface 32a of one of the adjacent refrigerant flow paths 32 (flow path 32H) is higher than that of the other (flow path 32L). In such a case, since the flow path 32H extracts heat from the ceramic plate 20 more easily than the flow path 32L, the temperature of the wafer mounting surface 21 gradually increases from the position facing the flow path 32H toward the position facing the flow path 32L. Therefore, it is preferable to design the degree of heat extraction in the vicinity directly above the bottomed hole 24 of the ceramic plate on the wafer mounting surface 21 to conform to this tendency, and the significance of applying the present invention is high.

[0040] [Second Embodiment] FIG. 9 is an enlarged partial longitudinal sectional view of the wafer stage 110 according to the second embodiment, and FIG. 10 is a sectional view taken along line C-C of FIG. 9 (an enlarged partial cross-sectional view).

[0041] The wafer stage 110 is the same as that of the first embodiment, except that in the first embodiment, the central axis of the base plate through hole 34 is eccentric from the central axis of the ceramic plate bottomed hole 24, an insulating tube 150 is used instead of the insulating tube 50, and an insulating tube inner peripheral surface adhesive layer 163 is provided. Therefore, in FIGS. 9 and 10, the same reference numerals are given to the same components as those in the first embodiment.

[0042] As shown in FIG. 10, the central axis of the base plate through hole 34 is eccentric toward the center of the ceramic plate 20 with respect to the ceramic plate bottomed hole 24. The insulating tube 150 has a constant wall thickness t1 along the circumferential direction of the insulating tube 150. Specifically, the center of the inner peripheral circle (insulating tube through hole 154) of the insulating tube 150 coincides with the center of the outer peripheral circle of the insulating tube 150. The central axis of the insulating tube 150 coincides with the central axis of the base plate through hole 34 but is eccentric from the central axis of the ceramic plate bottomed hole 24. The insulating tube inner peripheral surface adhesive layer 163 is provided so as not to block the ceramic plate bottomed hole 24 and adheres the inner peripheral surface of the insulating tube 150 and the lower surface 23 of the ceramic plate 20. The insulating tube inner peripheral surface adhesive layer 163 is integral with the adhesive layer 60. The radial length L of the insulating tube inner peripheral surface adhesive layer 163 continuously changes along the circumferential direction of the insulating tube 150. This length L is the shortest at the position closest to the flow path 32H, gradually becomes longer as it approaches the flow path 32L, and is the longest at the position closest to the flow path 32L.

[0043] In the second embodiment, the radial length L of the inner peripheral surface adhesive layer 163 of the insulating tube continuously changes along the circumferential direction of the insulating tube 150. Therefore, the thermal resistance from the central axis of the bottomed hole 24 of the ceramic plate to the inner peripheral surface 34b of the base plate through hole 34 continuously changes along the circumferential direction of the insulating tube 150. And heat extraction is better in the places with lower thermal resistance than in the places with higher thermal resistance. Also, the radial length L of the inner peripheral surface adhesive layer 163 of the insulating tube is the shortest at the position closest to the flow path 32H, gradually becomes longer as it approaches the flow path 32L from there, and is the longest at the position closest to the flow path 32L. Therefore, the region directly above the hole on the wafer mounting surface 21 also gradually becomes hotter from the side of the flow path 32H toward the side of the flow path 32L, similar to the region directly above the boundary portion. Thus, also in the second embodiment, the temperature distribution in the region directly above the hole on the wafer mounting surface 21 is almost the same as that in the region directly above the boundary portion.

[0044] According to the wafer mounting table 110 of the second embodiment described in detail above, since the radial length L of the inner peripheral surface adhesive layer 163 of the insulating tube continuously changes along the circumferential direction of the insulating tube 150, it is suitable for controlling and designing the degree of heat extraction in the vicinity directly above the bottomed hole 24 of the ceramic plate on the wafer mounting surface 21 so as not to be uniform.

[0045] Also, the wall thickness t1 of the insulating tube 150 is constant along the circumferential direction of the insulating tube 150, and the central axis of the insulating tube 150 is eccentric with respect to the central axis of the bottomed hole 24 of the ceramic plate. Therefore, it is possible to relatively easily continuously change the radial length L of the inner peripheral surface adhesive layer 163 along the circumferential direction of the insulating tube 150.

[0046] Furthermore, the base plate through-hole 34 is provided between adjacent refrigerant flow paths 32 in the base plate 30, and the height of the ceiling surface 32a of one of the adjacent refrigerant flow paths 32 (flow path 32H) is higher than that of the other (flow path 32L). In such a case, since the flow path 32H is more likely to extract heat from the ceramic plate 20 than the flow path 32L, the temperature of the wafer placement surface 21 gradually increases from the position facing the flow path 32H toward the position facing the flow path 32L. Therefore, it is preferable to design the degree of heat extraction in the vicinity directly above the bottomed hole 24 of the ceramic plate on the wafer placement surface 21 to conform to this tendency, and the significance of applying the present invention is high.

[0047] [Other Embodiments] In the first embodiment described above, the thickness t2 (radial length) of the outer peripheral surface adhesion portion 62 of the insulating tube is constant along the circumferential direction of the insulating tube 50. However, as shown in FIG. 11, the thickness t2 of the outer peripheral surface adhesion portion 62 of the insulating tube may be continuously changed along the circumferential direction of the insulating tube 50. In FIG. 11, the thickness t2 of the outer peripheral surface adhesion portion 62 of the insulating tube is the shortest at the position closest to the flow path 32H, gradually becomes longer as it approaches the flow path 32L from there, and is the longest at the position closest to the flow path 32L. The thermal resistance from the central axis of the bottomed hole 24 of the ceramic plate to the inner peripheral surface 34b of the base plate through-hole 34 continuously changes along the circumferential direction of the insulating tube 50 not only by the wall thickness t1 of the insulating tube 50 but also by the thickness t2 of the outer peripheral surface adhesion portion 62 of the insulating tube. Also in this case, the temperature distribution in the region directly above the hole on the wafer placement surface 21 is almost the same as that in the region directly above the boundary portion.

[0048] In the second embodiment described above, the thickness t2 (radial length) of the outer peripheral surface adhesive portion 62 of the insulating tube is constant along the circumferential direction of the insulating tube 50. However, as shown in FIG. 12, the thickness t2 of the outer peripheral surface adhesive portion 62 of the insulating tube may be continuously changed along the circumferential direction of the insulating tube 50. In FIG. 12, the thickness t2 of the outer peripheral surface adhesive portion 62 of the insulating tube is the shortest at the position closest to the flow path 32H, gradually becomes longer as it approaches the flow path 32L from there, and is the longest at the position closest to the flow path 32L. The thermal resistance from the central axis of the bottomed hole 24 of the ceramic plate to the inner peripheral surface 34b of the base plate through hole 34 continuously changes along the circumferential direction of the insulating tube 50 depending not only on the radial length L of the inner peripheral surface adhesive layer 163 of the insulating tube but also on the thickness t2 of the outer peripheral surface adhesive portion 62 of the insulating tube. Also in this case, the temperature distribution in the region directly above the hole on the wafer mounting surface 21 is almost the same as that in the region directly above the boundary portion.

[0049] The inner peripheral surface adhesive layer 163 of the insulating tube of the second embodiment may be further provided in the first embodiment and the embodiment of FIG. 11 described above. Even in this case, the temperature distribution in the region directly above the hole on the wafer mounting surface 21 is almost the same as that in the region directly above the boundary portion.

[0050] In the first embodiment described above, the bottomed hole 24 of the ceramic plate is adopted as the ceramic plate hole, and the power supply member 70 inserted into the insulating tube through hole 54 of the insulating tube 50 and the bottomed hole 24 of the ceramic plate is electrically connected to the electrostatic electrode 22. However, the ceramic plate hole is not particularly limited to this. For example, as shown in FIG. 13, the ceramic plate hole may be a ceramic plate through hole 224 that penetrates the ceramic plate 20 and the electrostatic electrode 22 in the vertical direction. The electrostatic electrode 22 is not exposed on the inner peripheral surface of the ceramic plate through hole 224. In FIG. 13, the same reference numerals are given to the same components as in the first embodiment. Such a ceramic plate through hole 224 can be used, for example, as a gas hole for supplying a heat conductive gas (e.g., He gas) to the lower surface of the wafer W, or as a lift pin hole through which a lift pin for moving the wafer W up and down with respect to the wafer mounting surface 21 is inserted.

[0051] This is the same for the second embodiment as well (see Fig. 14). In Fig. 14, an adhesive layer through-hole 163a that is coaxial and has the same diameter as the ceramic plate through-hole 224 is provided in the inner peripheral surface adhesive layer 163 of the insulating tube at a position facing the ceramic plate through-hole 224. Therefore, the radial length L of the inner peripheral surface adhesive layer 163 of the insulating tube continuously changes along the circumferential direction of the insulating tube 50, similar to the second embodiment. In Fig. 14, the same reference numerals are given to the same components as in the second embodiment.

[0052] In the first embodiment described above, a resin adhesive layer was exemplified as the bonding layer 40, but it is not particularly limited thereto. For example, a metal bonding layer may be adopted as the bonding layer 40. The metal bonding layer can be formed by well-known TCB (Thermal compression bonding) using a metal bonding material (for example, an Al-Mg-based bonding material or an Al-Si-Mg-based bonding material). This is the same for the second embodiment and other embodiments as well.

[0053] In the first embodiment described above, the electrostatic electrode 22 was incorporated in the ceramic plate 20, but it is not particularly limited thereto. For example, instead of or in addition to the electrostatic electrode 22, a heater electrode (resistance heating element) may be incorporated, or an electrode for plasma generation (RF) electrode may be incorporated. This is the same for the second embodiment and other embodiments as well.

Industrial Applicability

[0054] The member for a semiconductor manufacturing apparatus of the present invention can be used, for example, in the field of processing wafers with plasma or the like.

Explanation of Reference Numerals

[0055] 10 Wafer mounting stage, 20 Ceramic plate, 21 Wafer mounting surface, 22 Electrostatic electrode, 23 Lower surface, 24 Bottomed hole of ceramic plate, 30 Base plate, 32 Refrigerant flow path, 32a Ceiling surface, 32H, 32L Flow paths, 32in Inlet, 32out Outlet, 32m Intermediate position, 34 Through hole of base plate, 34b Inner peripheral surface, 34c Tapered surface, 40 Bonding layer, 44 Through hole of bonding layer, 50 Insulating tube, 50a Upper surface, 50b Outer peripheral surface, 54 Through hole of insulating tube, 60 Adhesive layer, 60x Adhesive, 61 Adhesive part of upper surface of insulating tube, 62 Adhesive part of outer peripheral surface of insulating tube, 70 Power supply member, 110 Wafer mounting stage, 150 Insulating tube, 154 Through hole of insulating tube, 163 Inner peripheral surface adhesive layer of insulating tube, 163a Through hole of adhesive layer, 224 Through hole of ceramic plate, 310 Wafer mounting stage, 350 Insulating tube, 354 Through hole of insulating tube.

Claims

1. A member for a semiconductor manufacturing apparatus, comprising a ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, a base plate provided on the lower surface of the ceramic plate and incorporating a refrigerant flow path, a base plate through-hole provided between adjacent refrigerant flow paths and penetrating the base plate in the vertical direction, a fixed insulating tube provided in the base plate through-hole, a ceramic plate hole provided in the lower surface of the ceramic plate and communicating with the inside of the insulating tube, wherein the wall thickness of the insulating tube varies continuously along the circumferential direction of the insulating tube. A member for a semiconductor manufacturing apparatus.

2. The center of the inner circumferential circle of the insulating tube is eccentric from the center of the outer circumferential circle of the insulating tube. The member for a semiconductor manufacturing apparatus according to Claim 1.

3. A member for a semiconductor manufacturing apparatus, comprising a ceramic plate having a wafer placement surface on the upper surface and incorporating electrodes, a base plate provided on the lower surface of the ceramic plate and incorporating a refrigerant flow path, a base plate through-hole provided between adjacent refrigerant flow paths and penetrating the base plate in the vertical direction, a fixed insulating tube provided in the base plate through-hole, a ceramic plate hole provided in the lower surface of the ceramic plate and communicating with the inside of the insulating tube, an inner circumferential surface adhesive layer of the insulating tube provided so as not to cover the ceramic plate hole and bonding the inner circumferential surface of the insulating tube and the lower surface of the ceramic plate, wherein the radial length of the insulating tube of the inner circumferential surface adhesive layer of the insulating tube varies along the circumferential direction of the insulating tube. A member for a semiconductor manufacturing apparatus.

4. The wall thickness of the insulating tube is constant along the circumferential direction of the insulating tube, and the central axis of the insulating tube is eccentric with respect to the central axis of the ceramic plate hole. The member for a semiconductor manufacturing apparatus according to Claim 3.

5. The outer circumferential surface of the insulating tube is bonded to the inner circumferential surface of the base plate through-hole via an outer circumferential surface adhesive layer of the insulating tube, and the thickness of the outer circumferential surface adhesive layer of the insulating tube varies along the circumferential direction of the insulating tube. The member for a semiconductor manufacturing apparatus according to Claim 1 or 3.

6. The base plate through-hole is provided between adjacent refrigerant flow paths, and the ceiling surface of one of the adjacent refrigerant flow paths is higher than that of the other. The member for a semiconductor manufacturing apparatus according to Claim 1 or 3.

7. ​ ​ ​ ​ The ceramic plate hole is a bottomed hole reaching the electrode from the lower surface of the ceramic plate, or is a through hole penetrating the ceramic plate in the vertical direction. The member for a semiconductor manufacturing apparatus according to claim 1 or 3.

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