Electronic component

Abstract

To improve the electromagnetic wave shielding effect of an electronic component.SOLUTION: An acoustic wave device 100 includes a support substrate 10, an acoustic wave element 70 provided on the support substrate 10, a frame 30 provided on the support substrate 10 to surround an elastic wave element 70 in plan view, and having a side surface 33 opposite to the elastic wave element 70 located inside the side surface 17 of the support substrate 10, a lid 20 which is provided on the frame 30, has a side surface 27 located outside the side surface 33 of the frame 30, sandwiches a gap 15 with the support substrate 10, and seals the elastic wave element 70 in the gap 15, a coating layer 50 covering the side surface 33 of the frame 30, and an exterior metal film 51 continuously covering the side surface 17 of the support substrate 10, the side surface 52 of the coating layer 50, and the side surface 27 of the lid 20 and connected to a ground terminal 12c.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to an electronic component.

Background Art

[0002] There is known an electronic component in which a lid is provided on a frame surrounding a functional element, and the functional element is sealed in a gap between the lid and a substrate (for example, Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] For noise countermeasures, it is conceivable to cover the surface of the electronic component with an exterior metal film. In this case, in a structure in which a frame is provided on a substrate and a lid is provided on the frame, the exterior metal film is vertically divided on the side surface of the frame, weakening the shielding effect of electromagnetic waves and possibly making the noise countermeasures insufficient.

[0005] The present invention has been made in view of the above problems, and an object thereof is to improve the shielding effect of electromagnetic waves.

Means for Solving the Problems

[0006] The present invention includes a substrate, a functional element provided on the substrate, a frame provided on the substrate so as to surround the functional element in a plan view, and having a side surface on the side opposite to the functional element located inside the side surface of the substrate, a lid provided on the frame, having a side surface located outside the side surface of the frame, sandwiching a gap with the substrate and sealing the functional element in the gap, a coating layer covering the side surface of the frame, and an exterior metal film that continuously covers the side surface of the substrate, the side surface of the coating layer, and the side surface of the lid and is connected to a ground terminal. The maximum distance between the side surface of the coating layer and the side surfaces of the substrate and the lid is less than or equal to 1 / 2 of the maximum distance between the side surface of the frame body and the side surfaces of the substrate and the lid. It is an electronic component.

[0007] In the above configuration, the lid can be formed of a metal material, and the exterior metal film can be in direct contact with the lid.

[0008] In the above configuration, the lid can be formed to contain an insulating material, and the exterior metal film can cover the side surface of the lid and the surface of the lid opposite to the gap.

[0009] In the above configuration, the ground terminal is provided on a second surface opposite to a first surface on which the functional element of the substrate is provided, and the exterior metal film can be continuously provided from the side surface of the substrate to the second surface of the substrate and directly connected to the ground terminal.

[0010] In the above configuration, another substrate provided under the substrate, another functional element provided on the surface of the other substrate on the substrate side, and provided between the other substrate and the substrate so as to surround the other functional element in a plan view, having a side surface on the side opposite to the other functional element located inside the side surfaces of the substrate and the other substrate, another frame that seals the other functional element in another gap between the other substrate and the substrate, an intermediate metal layer provided to cover the surface of the substrate on the other gap side, having a side surface located outside the side surface of the other frame and electrically connected to the exterior metal film, and another coating layer covering the side surface of the other frame, and the exterior metal film can be configured to continuously cover the side surface of the other coating layer, the side surface of the substrate, the side surface of the coating layer, and the side surface of the lid.

[0011] In the above configuration, the ground terminal is provided on a second surface opposite to a first surface on which the other functional element of the other substrate is provided, and the exterior metal film can be configured to be continuously provided from a side surface of the other substrate to the second surface of the other substrate and directly connected to the ground terminal.

[0012] In the above configuration, the ground terminal is provided on a second surface opposite to a first surface on which the other functional element of the other substrate is provided, the intermediate metal layer is electrically connected to the ground terminal via a via wiring provided on the other substrate, and the exterior metal film can be configured to be electrically connected to the ground terminal via the intermediate metal layer and the via wiring.

[0013] In the above configuration, the functional element can be configured to be an elastic wave element.

[0014] In the above configuration, a filter can be formed by the elastic wave element.

[0015] In the above configuration, a multiplexer can be formed by the filter.

Advantages of the Invention

[0016] According to the present invention, the shielding effect of electromagnetic waves can be improved.

Brief Description of the Drawings

[0017]

Figure 1

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BEST MODE FOR CARRYING OUT THE INVENTION

[0018] Hereinafter, with reference to the drawings, an example of the case of a surface acoustic wave device as an electronic component will be described as an example for embodiments of the present invention.

EXAMPLE

[0019] FIG. 1 is a plan view of a surface acoustic wave device 100 according to Embodiment 1. FIG. 2(a) is a cross-sectional view taken along line A-A of FIG. 1, and FIG. 2(b) is a cross-sectional view taken along line B-B of FIG. 1. FIG. 1 mainly shows a support substrate 10, a piezoelectric layer 11, via wirings 13, wirings 14, a frame body 30, columnar bodies 40, a coating layer 50, and a surface acoustic wave element 70 through a packaging metal film 51 and a lid 20. Also, in FIG. 1, an input terminal 12a, an output terminal 12b, and a ground terminal 12c provided on the lower surface of the support substrate 10 are shown by broken lines. In FIG. 1, for clarity of the figure, hatches are added to the wirings 14, the frame body 30, and the coating layer 50.

[0020] As shown in FIG. 1, FIG. 2(a), and FIG. 2(b), in the elastic wave device 100, a piezoelectric layer 11 is bonded to the upper surface of a support substrate 10. The support substrate 10 is, for example, a sapphire substrate, an alumina substrate, a spinel substrate, a quartz substrate, a crystal substrate, or a silicon substrate, and has a thickness of about 50 μm to 300 μm. The sapphire substrate is a substrate mainly composed of single-crystalline Al2O3, the alumina substrate is a substrate mainly composed of polycrystalline Al2O3, and the spinel substrate is a substrate mainly composed of single-crystalline or polycrystalline MgAl2O4. The quartz substrate is a substrate mainly composed of amorphous SiO2, the crystal substrate is a substrate mainly composed of single-crystalline SiO2, and the silicon substrate is a substrate mainly composed of single-crystalline or polycrystalline Si. The piezoelectric layer 11 is, for example, a single-crystalline lithium tantalate layer or a single-crystalline lithium niobate layer, and has a thickness of about 0.5 μm to 30 μm. The linear expansion coefficient of the support substrate 10 is smaller than that of the piezoelectric layer 11. Thereby, the frequency temperature coefficient of the elastic wave device 100 can be reduced. An insulating layer such as silicon oxide or aluminum nitride may be provided between the support substrate 10 and the piezoelectric layer 11. Thus, the piezoelectric layer 11 is directly or indirectly bonded to the support substrate 10.

[0021] One or a plurality of elastic wave elements 70 are provided on the upper surface of the piezoelectric layer 11. An input terminal 12a, an output terminal 12b, and a ground terminal 12c are provided on the lower surface of the support substrate 10. The input terminal 12a, the output terminal 12b, and the ground terminal 12c are foot pads for electrically connecting the elastic wave element 70 to the outside. A via wiring 13 penetrating the support substrate 10 is provided. One end of the via wiring 13 is connected to the input terminal 12a, the output terminal 12b, or the ground terminal 12c, and the other end is connected to the wiring 14. Thereby, the plurality of elastic wave elements 70 are electrically connected to the input terminal 12a, the output terminal 12b, and the ground terminal 12c via the wiring 14 and the via wiring 13. The input terminal 12a, the output terminal 12b, the ground terminal 12c, the via wiring 13, and the wiring 14 are metal layers containing, for example, titanium, copper, aluminum, platinum, nickel, and / or gold, etc., and may be a single-layer metal layer or a laminated metal layer.

[0022] FIG. 3 is a plan view of the elastic wave element 70 in Example 1. As shown in FIG. 3, the elastic wave element 70 is a surface acoustic wave resonator. An IDT (Interdigital Transducer) 71 and reflectors 72 are provided on the upper surface of the piezoelectric layer 11. The IDT 71 has a pair of opposing comb-shaped electrodes 73. The comb-shaped electrode 73 has a plurality of electrode fingers 74 and a bus bar 75 to which the plurality of electrode fingers 74 are connected. The reflectors 72 are provided on both sides of the IDT 71. The IDT 71 excites a surface acoustic wave in the piezoelectric layer 11. The pitch of the electrode fingers 74 of one of the pair of comb-shaped electrodes 73 is approximately equal to the wavelength λ of the elastic wave. Approximately twice the pitch D of the plurality of electrode fingers 74 is equal to the wavelength λ of the elastic wave. The IDT 71 and the reflectors 72 are formed of a metal film such as aluminum, copper, or molybdenum, for example. A protective film or a temperature compensation film covering the IDT 71 and the reflectors 72 may be provided on the upper surface of the piezoelectric layer 11. The comb-shaped electrode 73 may have dummy electrode fingers.

[0023] A filter or a duplexer may be formed by a plurality of elastic wave elements 70 formed on the upper surface of the piezoelectric layer 11. FIG. 4(a) is a circuit diagram of the filter, and FIG. 4(b) is a block diagram of the duplexer.

[0024] As shown in FIG. 4(a), one or a plurality of series resonators S1 to S4 are connected in series between the input terminal Tin and the output terminal Tout. One or a plurality of parallel resonators P1 to P3 are connected in parallel between the input terminal Tin and the output terminal Tout. The series resonators S1 to S4 and the parallel resonators P1 to P3 are elastic wave elements 70. The number and the like of the series resonators and the parallel resonators can be set as appropriate. Although a ladder-type filter has been described as an example of the filter, the filter may be a multi-mode type filter.

[0025] As shown in FIG. 4(b), a transmission filter 90 is connected between the common terminal Ant and the transmission terminal Tx. A reception filter 91 is connected between the common terminal Ant and the reception terminal Rx. The transmission filter 90 allows the signal in the transmission band among the high-frequency signals input from the transmission terminal Tx to pass through to the common terminal Ant as a transmission signal, and suppresses signals of other frequencies. The reception filter 91 allows the signal in the reception band among the high-frequency signals input from the common terminal Ant to pass through to the reception terminal Rx as a reception signal, and suppresses signals of other frequencies. Although a duplexer is shown as an example of the multiplexer, a triplexer or a quadruplexer may also be used.

[0026] In FIG. 1, the case of a ladder filter 92 formed by a plurality of surface acoustic wave elements 70 to form series resonators S1 to S4 and parallel resonators P1 to P3 is shown as an example. The series resonators S1 to S4 are connected in series between the input terminal 12a and the output terminal 12b. The parallel resonators P1 to P3 are connected in parallel between the input terminal 12a and the output terminal 12b. That is, one end of the parallel resonators P1 to P3 is connected to a wiring 14 connecting between the series resonators S1 to S4, and the other end is connected to the ground terminal 12c.

[0027] As shown in FIGS. 1, 2(a), and 2(b), the piezoelectric layer 11 is not provided in the peripheral region of the support substrate 10. In a plan view, a frame body 30 is provided on the support substrate 10 so as to surround the piezoelectric layer 11. The frame body 30 is provided on the support substrate 10 away from the piezoelectric layer 11. A side surface 33 of the frame body 30 on the side opposite to the surface acoustic wave element 70 is located inside (the surface acoustic wave element 70 side) of the side surface 17 of the support substrate 10. The height of the frame body 30 is, for example, about 15 μm to 30 μm, and the width is, for example, about 10 μm to 40 μm.

[0028] The frame body 30 includes an annular metal layer 31 and an annular bonding layer 32. The annular metal layer 31 is provided in direct contact with, for example, the upper surface of the support substrate 10. The annular bonding layer 32 is provided on the annular metal layer 31. The annular metal layer 31 is a metal layer containing, for example, titanium, copper, aluminum, platinum, nickel, and / or gold, etc., and may be a single-layer metal layer or a laminated metal layer. The annular bonding layer 32 is a brazing metal layer such as gold-tin, silver-tin, or tin-silver-copper, etc.

[0029] A lid 20 is provided on the frame body 30 so that a gap 15 is formed between the lid 20 and the support substrate 10. The side surface 27 of the lid 20 is located outside the side surface 33 of the frame body 30. In other words, the side surface 33 of the frame body 30 is located inside (on the side of the elastic wave element 70) the side surface 27 of the lid 20. The lid 20 includes a bonding layer 21 and a main body 22. The lid 20 is joined to the frame body 30 by joining the bonding layer 21 to the annular bonding layer 32. Thereby, the elastic wave element 70 is sealed in the gap 15 by the support substrate 10, the lid 20, and the frame body 30. The main body 22 is thicker than the bonding layer 21 and is formed of a material harder than the bonding layer 21 so that the lid 20 is not crushed. The bonding layer 21 is, for example, a gold layer. The main body 22 is a metal layer with a small coefficient of linear expansion, for example, a Kovar layer. Kovar is an alloy of iron blended with nickel and cobalt. The thickness of the lid 20 is, for example, about 20 μm to 100 μm.

[0030] The piezoelectric layer 11 has an opening 16 that penetrates from the upper surface to the lower surface near the center of the lid 20. In the opening 16, for example, the upper surface of the support substrate 10 is exposed. In the opening 16, a columnar body 40 that supports the lid 20 with respect to the support substrate 10 is provided between the support substrate 10 and the lid 20. The columnar body 40 is located within the gap 15, is provided away from the piezoelectric layer 11, and is in contact with, for example, the upper surface of the support substrate 10. The height of the columnar body 40 is, for example, approximately the same as or higher than that of the frame body 30, and is about 15 μm to 40 μm, for example. The width of the columnar body 40 is, for example, approximately the same as or larger than that of the frame body 30, and is about 10 μm to 50 μm, for example. The columnar body 40 is not limited to being provided in two between the support substrate 10 and the lid 20, and may be provided in one case or three or more cases.

[0031] The columnar body 40 includes a metal layer 41 and a bonding layer 42. The metal layer 41 is provided in direct contact with, for example, the upper surface of the support substrate 10. The bonding layer 42 is provided on the metal layer 41. The metal layer 41 is a metal layer containing, for example, titanium, copper, aluminum, platinum, nickel, and / or gold, etc., and may be a single-layer metal layer or a laminated metal layer. The metal layer 41 is formed of, for example, the same material as the annular metal layer 31 and has the same layer structure. The bonding layer 42 is a brazing metal layer such as, for example, gold-tin, silver-tin, or tin-silver-copper. The bonding layer 42 is formed of, for example, the same material as the annular bonding layer 32.

[0032] The lid 20 is joined to the columnar body 40 by joining the bonding layer 21 to the bonding layer 42. By providing the columnar body 40 between the support substrate 10 and the lid 20, even when pressure is applied to the lid 20 from above, it is possible to suppress the lid 20 from bending. For this reason, it is possible to suppress the characteristics from deteriorating due to the lid 20 coming into contact with or approaching the elastic wave element 70, the wiring 14, etc.

[0033] Note that the frame body 30 and the columnar body 40 may be insulators such as resin. The main body 22 of the lid 20 may be a metal layer such as a copper layer, a gold layer, an aluminum layer, or a tungsten layer in addition to the kovar layer, or may be an insulating substrate such as a sapphire substrate, an alumina substrate, a spinel substrate, a quartz substrate, a quartz crystal substrate, a silicon substrate, a lithium tantalate substrate, or a lithium niobate substrate.

[0034] A coating layer 50 is provided to cover the side surface 33 of the frame body 30. The coating layer 50, for example, contacts the side surface 33 of the frame body 30 and covers the side surface 33. The thickness of the coating layer 50 on the side surface 33 of the frame body 30 is, for example, about 0.5 μm to 3.0 μm. The coating layer 50 preferably covers substantially the entire surface of the side surface 33 of the frame body 30. Covering substantially the entire surface means covering 90% or more of the total area of the side surface 33 of the frame body 30, and it may be 95% or more, or even 100%.

[0035] Since the coating layer 50 covers the side surface 33 of the frame body 30, the maximum distance X2 between the side surface 52 of the coating layer 50 on the side opposite to the frame body 30, the side surface 17 of the support substrate 10, and the side surface 27 of the lid 20 is smaller than the maximum distance X1 between the side surface 33 of the frame body 30, the side surface 17 of the support substrate 10, and the side surface 27 of the lid 20.

[0036] The coating layer 50 may be formed by including an element other than oxygen and carbon, which is an element constituting the support substrate 10, or may be formed by including a resin material such as an epoxy resin or a polyimide resin, or may be formed by including a metal material such as copper, nickel, gold, tin, silver, or palladium. When formed by including a resin material, it may have conductivity by containing a conductive filler, or may not contain a conductive filler. When formed by including an element constituting the support substrate 10, when the support substrate 10 is a sapphire substrate, the coating layer 50 is formed by including at least aluminum.

[0037] An exterior metal film 51 is provided to cover the side surface 17 of the support substrate 10, the side surface 52 of the coating layer 50, the side surface 27 of the lid 20, and the upper surface 23 of the lid 20. The exterior metal film 51 is continuously provided from the side surface 17 of the support substrate 10, through the side surface 52 of the coating layer 50, to the side surface 27 and the upper surface 23 of the lid 20. Therefore, the surface of the elastic wave device 100 is covered by the exterior metal film 51. From the viewpoint of the electromagnetic wave shielding effect, the thickness of the exterior metal film 51 is preferably equal to or greater than the skin depth of the electromagnetic wave to be shielded, and is, for example, about 1 μm to 5 μm. The exterior metal film 51 is a metal layer containing, for example, titanium, copper, aluminum, nickel, silver, and / or gold, etc., and may be a single-layer metal layer or a laminated metal layer. The exterior metal film 51 preferably covers substantially the entire surfaces of the side surface 17 of the support substrate 10, the side surface 52 of the coating layer 50, the side surface 27 of the lid 20, and the upper surface 23 of the lid 20. Covering substantially the entire surface means covering 90% or more of the total area of the side surface 17 of the support substrate 10, covering 90% or more of the total area of the side surface 52 of the coating layer 50, covering 90% or more of the total area of the side surface 27 of the lid 20, and covering 90% or more of the total area of the upper surface 23 of the lid 20, and it may cover 95% or more, or 100% of each.

[0038] The exterior metal film 51 extends from the side surface 17 of the support substrate 10 to a part of the lower surface of the support substrate 10 and is directly connected to the ground terminal 12c. As a result, a ground potential is supplied to the exterior metal film 51, and an electromagnetic wave shielding effect can be imparted to the exterior metal film 51. Thereby, the influence of noise from the outside to the elastic wave element 70 and the generation of noise from the elastic wave element 70 to the outside can be suppressed.

[0039] [First manufacturing method] Figs. 5(a) to 8(b) are cross-sectional views showing a first manufacturing method of the elastic wave device 100 according to Embodiment 1. The manufacturing method described with reference to Figs. 5(a) to 8(b) is a manufacturing method using a multi-faceted process. As shown in Fig. 5(a), for example, a via hole is formed by irradiating the upper surface of the support substrate 10 with a laser beam, and a metal layer is formed in the via hole using, for example, an electrolytic plating method. Then, the upper surface of the metal layer is planarized using, for example, a CMP (Chemical Mechanical Polishing) method so that the upper surface of the support substrate 10 is exposed. Thereby, the via wiring 13 is formed on the support substrate 10. Next, a piezoelectric substrate is joined to the upper surface of the support substrate 10 at room temperature using, for example, a surface activation method. The support substrate 10 and the piezoelectric substrate may be directly joined via an amorphous layer of several nm, or may be indirectly joined via an insulating layer. Then, the upper surface of the piezoelectric substrate is polished using, for example, a CMP method. Thereby, the piezoelectric layer 11 joined directly or indirectly to the upper surface of the support substrate 10 is formed. Next, an elastic wave element 70 is formed on the upper surface of the piezoelectric layer 11.

[0040] As shown in Fig. 5(b), a part of the piezoelectric layer 11 is removed using, for example, an etching method. Thereby, the piezoelectric layer 11 in the region around the elastic wave device is removed, and the via wiring 13 is exposed. Also, an opening 16 (see Figs. 1 and 2(b)) is formed in the piezoelectric layer 11. Next, a wiring 14 is formed which extends from the upper surface of the piezoelectric layer 11 to the via wiring 13 and electrically connects the elastic wave element 70 and the via wiring 13.

[0041] As shown in Fig. 6(a), a frame body 30 and columnar bodies 40 (see Figs. 1 and 2(b)) are formed on the support substrate 10 using, for example, an electrolytic plating method. The frame body 30 includes an annular metal layer 31 and an annular bonding layer 32, and is formed so as to surround the piezoelectric layer 11 in plan view. The columnar body 40 includes a metal layer 41 and a bonding layer 42 (see Fig. 2(b)), and is formed in the opening 16 provided in the piezoelectric layer 11.

[0042] As shown in FIG. 6(b), the lid 20 is joined to the frame body 30 and the columnar body 40. The lid 20 is joined to the frame body 30 and the columnar body 40 by alloying with the bonding layer 21 reacting with the annular bonding layer 32 and the bonding layer 42. Thereby, the surface acoustic wave element 70 is sealed in the gap 15 formed between the support substrate 10 and the lid 20.

[0043] As shown in FIG. 7(a), the lower surface of the support substrate 10 is polished using, for example, the CMP method. Thereby, the via wiring 13 is exposed on the lower surface of the support substrate 10. Next, an input terminal 12a (see FIG. 1), an output terminal 12b, and a ground terminal 12c connected to the via wiring 13 are formed on the lower surface of the support substrate 10.

[0044] As shown in FIG. 7(b), the support substrate 10 and the lid 20 are cut to individualize the surface acoustic wave device by irradiating a laser beam 1 to a cutting region between adjacent surface acoustic wave devices. For example, using a pulsed UV laser, the surface acoustic wave device is individualized by irradiating the lid 20 and the support substrate 10 with the laser beam 1 having a wavelength of 355 nm emitted from the pulsed UV laser. The lid 20 and the support substrate 10 are melted by the irradiation of the laser beam 1. At this time, by appropriately setting the irradiation conditions of the laser beam 1, the melt of the support substrate 10 and the lid 20 is appropriately scattered and deposited in an appropriate amount on the side surface 33 of the frame body 30.

[0045] As shown in FIG. 8(a), when the singulation of the elastic wave device is completed, a coating layer 50 with an appropriate thickness is formed on the side surface 33 of the frame 30 due to the deposition of the melt of the support substrate 10 and the lid 20. The coating layer 50 is formed to contain at least the elements constituting the support substrate 10. Further, since the support substrate 10 and the lid 20 are melted by the irradiation of the laser beam 1, uneven shapes are formed on the side surface 17 of the support substrate 10 and the side surface 27 of the lid 20 by re-hardening after melting. Also, the side surface 17 of the support substrate 10 is modified by the irradiation of the laser beam 1 to form an amorphous region. For example, when the support substrate 10 is a sapphire substrate, the inside of the support substrate 10 is single crystal, while an amorphous region is formed on the side surface 17 of the support substrate 10. Note that an amorphous region may also be formed on the side surface 27 of the lid 20 depending on the material of the lid 20.

[0046] As shown in FIG. 8(b), an exterior metal film 51 is formed on the surface of the elastic wave device by, for example, a sputtering method. The exterior metal film 51 covers the side surface 17 of the support substrate 10, the side surface 52 of the coating layer 50, the side surface 27 of the lid 20, and the upper surface 23 of the lid 20, and is also formed on a part of the lower surface of the support substrate 10 so as to be directly connected to the ground terminal 12c. Thus, the elastic wave device 100 according to the first embodiment is formed.

[0047] [Second manufacturing method] FIGS. 9(a) and 9(b) are cross-sectional views showing a second manufacturing method of the elastic wave device 100 according to the first embodiment. First, after performing the same steps as those shown in FIGS. 5(a) to 7(a), the elastic wave device is singulated. At this time, as shown in FIG. 9(a), an insulating film 58 is formed on the side surface 33 of the frame 30 instead of the coating layer 50. The insulating film 58 is formed by the scattering of the melt of the support substrate 10 when the support substrate 10 and the lid 20 are irradiated with the laser beam 1 for singulation, and is thinner than the coating layer 50 depending on the irradiation conditions of the laser beam 1. Thus, by irradiating the support substrate 10 with the laser beam 1 for singulation, the insulating film 58 may be formed on the side surface 33 of the frame 30.

[0048] As shown in FIG. 9(b), a positive photosensitive resin film 2 is applied so as to cover the side surface 17 of the support substrate 10, the side surface 33 of the frame 30, the side surface 27 of the lid 20, and the upper surface 23 of the lid 20. The photosensitive resin film 2 is, for example, an epoxy resin film or a polyimide resin film. Thereafter, exposure, development, and post-baking are performed on the photosensitive resin film 2. Since the photosensitive resin film 2 formed on the side surface 33 of the frame 30 is shielded by the lid 20 and is not irradiated with light during exposure, it remains after development. For this reason, as in FIG. 8(a), a coating layer 50 composed of an insulating film 58 and the photosensitive resin film 2 is formed on the side surface 33 of the frame 30. Thereafter, as in FIG. 8(b), an exterior metal film 51 is formed on the surface of the surface acoustic wave device. Thereby, the surface acoustic wave device 100 according to Example 1 is formed.

[0049] [Third manufacturing method] The third manufacturing method of the surface acoustic wave device 100 according to Example 1 is to first perform the same steps as those shown in FIGS. 5(a) to 7(a), and then separate the surface acoustic wave device into individual pieces. At this time, as in the second manufacturing process, an insulating film 58 is formed on the side surface 33 of the frame 30 instead of the coating layer 50 (see FIG. 9(a)). After the surface acoustic wave device is separated into individual pieces, a plating film is deposited on the side surface 33 of the frame 30 using, for example, an electroless plating method. The plating film is, for example, a copper plating film, a nickel plating film, a phosphorus plating film, a gold plating film, a tin plating film, a silver plating film, or a palladium plating film. Thereby, as in FIG. 8(a), a coating layer 50 composed of an insulating film 58 and the plating film is formed on the side surface 33 of the frame 30. Thereafter, as in FIG. 8(b), an exterior metal film 51 is formed on the surface of the surface acoustic wave device. Thereby, the surface acoustic wave device 100 according to Example 1 is formed.

[0050] [Comparative Example 1] FIG. 10 is a cross-sectional view of the elastic wave device 1100 according to Comparative Example 1. As shown in FIG. 10, in the elastic wave device 1100, an insulating film 58 thinner than the coating layer 50 is formed on the side surface 33 of the frame 30 instead of the coating layer 50. Due to manufacturing reasons and / or component tolerances, etc., the side surface 33 of the frame 30 is formed inside the side surface 17 of the support substrate 10 and the side surface 27 of the lid 20. For this reason, due to the unevenness formed by the support substrate 10, the frame 30, and the lid 20, the exterior metal film 51 may be divided into the lid 20 side and the support substrate 10 side. Since the exterior metal film 51 is divided in the frame 30 and the insulating film 58 is formed on the side surface 33 of the frame 30, even if the exterior metal film 51 extends to the lower surface of the support substrate 10 and is directly connected to the ground terminal 12c, the ground potential is not supplied to the portion of the exterior metal film 51 that covers the lid 20. For this reason, the shielding effect of the electromagnetic wave by the exterior metal film 51 is weakened, and noise countermeasures become insufficient.

[0051] On the other hand, according to Example 1, as shown in FIGS. 2(a) and 2(b), a coating layer 50 is provided to cover the side surface 33 of the frame 30. The exterior metal film 51 is continuously provided from the side surface 17 of the support substrate 10 through the side surface 52 of the coating layer 50 to the side surface 27 of the lid 20, and covers the side surface 17 of the support substrate 10, the side surface 52 of the coating layer 50, and the side surface 27 of the lid 20. Thereby, when the exterior metal film 51 is connected to the ground terminal 12c and the ground potential is supplied, the entire exterior metal film 51 becomes the ground potential, so that the shielding effect of the electromagnetic wave can be improved. Therefore, the effect of noise countermeasures can be improved.

[0052] From the viewpoint of the shielding effect by the exterior metal film 51, it is preferable that the exterior metal film 51 covers 70% or more of the total area of the side surface 17 of the support substrate 10, 70% or more of the total area of the side surface 52 of the coating layer 50, and 70% or more of the total area of the side surface 27 of the lid 20. More preferably, it covers 80% or more of each, and even more preferably, it covers 90% or more of substantially the entire area of each.

[0053] Also, in Example 1, the lid 20 is formed of a metal material, and the exterior metal film 51 is in direct contact with the lid 20. As a result, since the lid 20 becomes the ground potential, the shielding effect of electromagnetic waves can be improved.

[0054] In Example 1, the lid 20 may be formed to include an insulating material, and the exterior metal film 51 may cover the upper surface 23, which is the surface opposite to the side surface 27 and the gap 15 of the lid 20. Thereby, even when the lid 20 is formed to include an insulating material, the exterior metal film 51 can shield electromagnetic waves. From the viewpoint of shielding electromagnetic waves, it is preferable that the exterior metal film 51 covers 70% or more of the total area of the upper surface 23 of the lid 20, more preferably 80% or more, and still more preferably 90% or more, which is substantially the entire surface. Also, the lid 20 may contain the same insulating material as the support substrate 10. For example, both the support substrate 10 and the main body 22 of the lid 20 may be sapphire substrates. In this case, since the difference in the linear expansion coefficients between the support substrate 10 and the lid 20 becomes small, the thermal stress generated due to temperature changes can be reduced.

[0055] Also, in Example 1, as shown in FIG. 2(a), the exterior metal film 51 is continuously provided from the side surface 17 of the support substrate 10 to the lower surface of the support substrate 10 and is directly connected to the ground terminal 12c. For example, when the exterior metal film 51 is electrically connected to the ground terminal 12c via a via wiring provided on the support substrate 10, the exterior metal film 51 may not have sufficient ground performance due to the inductance component of the via wiring. On the other hand, by extending the exterior metal film 51 from the side surface 17 to the lower surface of the support substrate 10 and directly connecting it to the ground terminal 12c, the ground performance of the exterior metal film 51 can be improved, and the shielding effect of electromagnetic waves can be improved.

[0056] In Example 1, from the viewpoint of suppressing the division of the exterior metal film 51 in the frame 30, the maximum distance X2 (see Fig. 2(b)) between the side surface 52 of the coating layer 50, the side surface 17 of the support substrate 10, and the side surface 27 of the lid 20 is preferably 1 / 2 or less, more preferably 1 / 5 or less, and still more preferably 1 / 10 or less of the maximum distance X1 (see Fig. 2(b)) between the side surface 33 of the frame 30, the side surface 17 of the support substrate 10, and the side surface 27 of the lid 20.

[0057] [Modification Example] Fig. 11(a) is a cross-sectional view of the elastic wave device 110 according to Modification Example 1 of Example 1, and Fig. 11(b) is a cross-sectional view of the elastic wave device 120 according to Modification Example 2 of Example 1. As shown in Fig. 11(a) and Fig. 11(b), in the elastic wave devices 110 and 120, the annular metal layer 31 and the annular bonding layer 32 of the frame 30 have a constricted shape with a narrow portion. The annular metal layer 31 is formed, for example, by an electrolytic plating method, but may have a constricted shape depending on plating conditions and the like. Further, when the height of the frame 30 from the support substrate 10 is lower than that of the columnar body 40, when joining the annular bonding layer 32 of the frame 30 and the bonding layer 42 of the columnar body 40 to the bonding layer 21 of the lid 20, when the bonding layer 21 comes into contact with the bonding layer 42, the annular bonding layer 32 may not be in sufficient contact. In this case, the bonding layer 21 and the bonding layer 42 are joined under an appropriate load, but the bonding layer 21 and the annular bonding layer 32 are joined without an appropriate load being applied, so the annular bonding layer 32 may have a constricted shape. Since the other configurations are the same as those in Example 1, the description thereof is omitted.

[0058] Even when the annular metal layer 31 and / or the annular bonding layer 32 of the frame 30 has a constricted shape and irregularities due to the constricted shape are formed on the side surface 33 of the frame 30, by providing the coating layer 50 so as to cover the side surface 33 of the frame 30, it is possible to suppress the exterior metal film 51 from being divided in the frame 30.

[0059] As shown in FIG. 11(a), the coating layer 50 may be contained inside the outer shape of the support substrate 10 and the outer shape of the lid 20, or as shown in FIG. 11(b), it may protrude outside the outer shape of the support substrate 10 and the outer shape of the lid 20.

Example

[0060] FIG. 12(a) is a cross-sectional view of the surface acoustic wave device 200 according to Example 2, and FIG. 12(b) is a cross-sectional view of the surface acoustic wave element 70a in Example 2. As shown in FIGS. 12(a) and 12(b), in the surface acoustic wave device 200, a surface acoustic wave element 70a is provided on the support substrate 10 instead of the surface acoustic wave element 70. The surface acoustic wave element 70a is a piezoelectric thin film resonator. The surface acoustic wave element 70a includes a piezoelectric layer 82 provided on the support substrate 10, a lower electrode 81 and an upper electrode 83 sandwiching the piezoelectric layer 82. A gap 84 is formed between the lower electrode 81 and the support substrate 10. A region where the lower electrode 81 and the upper electrode 83 face each other with at least a part of the piezoelectric layer 82 therebetween is a resonance region 85. In the resonance region 85, the lower electrode 81 and the upper electrode 83 excite an elastic wave in the thickness longitudinal vibration mode in the piezoelectric layer 82. Note that an insertion film for increasing the Q value or for temperature compensation may be inserted in the outer peripheral region of the resonance region 85 of the piezoelectric layer 82.

[0061] The lower electrode 81 and the upper electrode 83 are metal films including, for example, a ruthenium film or the like. The piezoelectric layer 82 is, for example, an aluminum nitride layer or a zinc oxide layer. An acoustic reflection film that reflects elastic waves may be provided instead of the gap 84.

[0062] As in Example 1 and its modified examples, the functional element provided on the support substrate 10 may also be the case of the surface acoustic wave device 70 including the comb-shaped electrode 73 provided on the piezoelectric layer 11 which is a single crystal lithium tantalate layer or a single crystal lithium niobate layer. As in Example 2, the functional element may also be the case of the surface acoustic wave device 70a which is a piezoelectric thin film resonator provided with the lower electrode 81 and the upper electrode 83 with the piezoelectric layer 82 interposed therebetween. Further, the functional element may be other than the surface acoustic wave device, and may be a piezoelectric element such as a MEMS (Micro Electro Mechanical System) element or other cases.

Example

[0063] FIG. 13(a) is a plan view of the support substrate 10b in the surface acoustic wave device 300 according to Example 3, FIG. 13(b) is a plan view of the intermediate metal layer 53, and FIG. 13(c) is a plan view of the support substrate 10a. FIG. 14 is a cross-sectional view of the surface acoustic wave device 300 according to Example 3. In FIG. 13(c), the antenna terminal 18a, the transmission terminal 18b, the reception terminal 18c, and the ground terminal 18d provided on the lower surface of the support substrate 10a are shown by broken lines. In FIGS. 13(a) to 13(c), for clarity of the drawing, the wirings 14a and 14b, the frames 30a and 30b, the coating layers 50a and 50b, and the intermediate metal layer 53 are hatched.

[0064] As shown in FIGS. 13(a) to 13(c) and FIG. 14, in the elastic wave device 300, a piezoelectric layer 11a is bonded to the upper surface of a support substrate 10a, and one or more elastic wave elements 70 are provided on the piezoelectric layer 11a. Series resonators S11, S12 and a parallel resonator P11 are formed by the elastic wave elements 70. An antenna terminal 18a, a transmission terminal 18b, a reception terminal 18c, and a ground terminal 18d are provided on the lower surface of the support substrate 10a. The series resonators S11, S12 are connected in series between the antenna terminal 18a and the transmission terminal 18b via a wiring 14a and a via wiring 13a. One end of the parallel resonator P11 is connected to the wiring 14a between the series resonators S11 and S12, and the other end is connected to the ground terminal 18d via the wiring 14a and the via wiring 13a. Thus, the parallel resonator P11 is connected in parallel between the antenna terminal 18a and the transmission terminal 18b. In this way, a transmission filter 90 having the series resonators S11, S12 and the parallel resonator P11 is formed on the support substrate 10a.

[0065] In a peripheral region of the support substrate 10a where the piezoelectric layer 11a is not provided, a frame body 30a is provided so as to surround the piezoelectric layer 11a in a plan view. The frame body 30a includes an annular metal layer 31a and an annular bonding layer 32a. A support substrate 10b is provided on the frame body 30a. An intermediate metal layer 53 is provided on the lower surface of the support substrate 10b so as to cover the lower surface of the support substrate 10b. The support substrate 10b is bonded to the frame body 30a by the intermediate metal layer 53 being bonded to the annular bonding layer 32a. Thus, the elastic wave element 70 provided on the piezoelectric layer 11a is sealed in a gap 15a formed between the support substrate 10a and the intermediate metal layer 53 by the support substrate 10a, the support substrate 10b, and the frame body 30a. The intermediate metal layer 53 has a main body portion 54 and an island portion 55. The island portion 55 is electrically insulated from the main body portion 54 by a gap 56 being formed between the island portion 55 and the main body portion 54. Note that an insulating film may be embedded in the gap 56. The intermediate metal layer 53 is, for example, a gold layer. The thickness of the intermediate metal layer 53 is preferably equal to or greater than the skin depth of the electromagnetic wave to be shielded, and is about 1 μm to 40 μm.

[0066] On the upper surface of the support substrate 10b, a piezoelectric layer 11b is bonded, and one or more surface acoustic wave elements 70 are provided on the piezoelectric layer 11b. Series resonators S21, S22 and a parallel resonator P21 are formed by the surface acoustic wave elements 70. The series resonators S21, S22 are connected in series between the antenna terminal 18a and the reception terminal 18c via the wiring 14b, the via wiring 13b, the island portion 55 of the intermediate metal layer 53, the pillar 60, the wiring 14a, and the via wiring 13a. One end of the parallel resonator P21 is connected to the wiring 14b between the series resonators S21 and S22, and the other end is connected to the ground terminal 18d via the wiring 14b, the via wiring 13b, the main body portion 54 of the intermediate metal layer 53, the pillar 60, the wiring 14a, and the via wiring 13a. As a result, the parallel resonator P21 is connected in parallel between the antenna terminal 18a and the reception terminal 18c. In this way, a reception filter 91 having the series resonators S21, S22 and the parallel resonator P21 is formed on the support substrate 10b.

[0067] The pillar 60 is provided to be positioned within the gap 15a between the support substrate 10a and the intermediate metal layer 53. The pillar 60 includes a metal layer 61 and a bonding layer 62. The metal layer 61 is provided in direct contact with the upper surface of the wiring 14a. The bonding layer 62 is provided on the metal layer 61. The bonding layer 62 is bonded to the intermediate metal layer 53. The metal layer 61 is a metal layer containing, for example, titanium, copper, aluminum, platinum, nickel, and / or gold, and may be a single-layer metal layer or a laminated metal layer. The bonding layer 62 is a brazing metal layer such as gold-tin, silver-tin, or tin-silver-copper.

[0068] In the peripheral region of the support substrate 10b where the piezoelectric layer 11b is not provided, a frame body 30b is provided so as to surround the piezoelectric layer 11b in plan view. The frame body 30b includes an annular metal layer 31b and an annular bonding layer 32b. A lid 20 is provided on the frame body 30b. The lid 20 is bonded to the frame body 30b by the bonding layer 21 being bonded to the annular bonding layer 32b. As a result, the surface acoustic wave element 70 provided on the piezoelectric layer 11b is sealed in the gap 15b formed between the support substrate 10b and the lid 20 by the support substrate 10b, the lid 20, and the frame body 30b.

[0069] The piezoelectric layer 11b has an opening 16 near the center of the lid 20. In the opening 16, a columnar body 40 is provided within the gap 15b between the support substrate 10b and the lid 20. The columnar body 40 is joined to the lid 20 by joining the joining layer 42 to the joining layer 21.

[0070] A covering layer 50a is provided to cover the side surface 33a of the frame body 30a on the side opposite to the gap 15a, and a covering layer 50b is provided to cover the side surface 33b of the frame body 30b on the side opposite to the gap 15b. An exterior metal film 51 is provided to cover the side surface 17a of the support substrate 10a, the side surface 52a of the covering layer 50a, the side surface 17b of the support substrate 10b, the side surface 52b of the covering layer 50b, the side surface 27 of the lid 20, and the upper surface 23 of the lid 20. The exterior metal film 51 is continuously provided from the side surface 17a of the support substrate 10a to the side surface 27 of the lid 20 via the side surface 52a of the covering layer 50a, the side surface 17b of the support substrate 10b, and the side surface 52b of the covering layer 50b. The exterior metal film 51 preferably covers substantially the entire surface of the side surface 17a of the support substrate 10a, the side surface 52a of the covering layer 50a, the side surface 17b of the support substrate 10b, the side surface 52b of the covering layer 50b, the side surface 27 of the lid 20, and the upper surface 23 of the lid 20. Covering substantially the entire surface means covering 90% or more of the total area of the side surface 17a of the support substrate 10a, covering 90% or more of the total area of the side surface 52a of the covering layer 50a, covering 90% or more of the total area of the side surface 17b of the support substrate 10b, covering 90% or more of the total area of the side surface 52b of the covering layer 50b, covering 90% or more of the total area of the side surface 27 of the lid 20, and covering 90% or more of the total area of the upper surface 23 of the lid 20, and it may cover 95% or more of each, or may cover 100%.

[0071] The exterior metal film 51 extends from the side surface 17a of the support substrate 10a to a part of the lower surface of the support substrate 10a and is directly connected to the ground terminal 18d. As a result, a ground potential is supplied to the exterior metal film 51, and an electromagnetic wave shielding effect can be imparted to the exterior metal film 51. Therefore, the influence of noise from the outside on the elastic wave element 70 and the generation of noise from the elastic wave element 70 to the outside can be suppressed.

[0072] The intermediate metal layer 53 has a side surface 57 located outside the side surface 33a of the frame 30a (on the side opposite to the surface acoustic wave element 70), and is directly connected to the exterior metal film 51. Therefore, when the exterior metal film 51 is directly connected to the ground terminal 18d and a ground potential is supplied, the ground potential is also supplied to the intermediate metal layer 53. Thus, an electromagnetic wave shielding effect is imparted to the intermediate metal layer 53. Since the intermediate metal layer 53 is located between the surface acoustic wave element 70 on the piezoelectric layer 11a and the surface acoustic wave element 70 on the piezoelectric layer 11b, electromagnetic coupling between the surface acoustic wave element 70 on the piezoelectric layer 11a and the surface acoustic wave element 70 on the piezoelectric layer 11b can be suppressed.

[0073] [Manufacturing Method] Figs. 15(a) to 16(b) are cross-sectional views showing a method for manufacturing the surface acoustic wave device 300 according to Embodiment 3. The manufacturing method described with reference to Figs. 15(a) to 16(b) is a manufacturing method using a multi-faceted process. As shown in Fig. 15(a), the same steps as those described in Figs. 5(a) to 7(a) of Embodiment 1 are performed to manufacture an upper substrate 350 having a support substrate 10b and a lid 20 joined to the support substrate 10b via a frame 30b. At this time, an intermediate metal layer 53 is formed on the lower surface of the support substrate 10b instead of a terminal.

[0074] As shown in Fig. 15(b), the same steps as those described in Figs. 5(a) to 6(a) of Embodiment 1 are performed to manufacture a lower substrate 360 having a support substrate 10a and a frame 30a and pillars 60 provided on the support substrate 10a.

[0075] As shown in Fig. 16(a), the upper substrate 350 and the lower substrate 360 are joined and integrated by joining the annular bonding layer 32a of the frame 30a provided on the lower substrate 360 and the bonding layer 62 of the pillar 60 to the intermediate metal layer 53 provided on the upper substrate 350. Next, after polishing the lower surface of the support substrate 10a using, for example, the CMP method to expose the via wiring 13a, an antenna terminal 18a, a transmission terminal 18b (see Fig. 13(c)), a reception terminal 18c (see Fig. 13(c)), and a ground terminal 18d that are connected to the via wiring 13a are formed on the lower surface of the support substrate 10a. Next, the support substrates 10a, 10b, and the lid 20 are cut by irradiating the laser beam 1 to the cutting region between adjacent surface acoustic wave devices to individualize the surface acoustic wave devices.

[0076] As shown in Fig. 16(b), when the fragmentation of the surface acoustic wave device by the laser beam 1 is completed, the melt of the support substrates 10a, 10b, and the intermediate metal layer 53 scattered by the irradiation of the laser beam 1 is deposited on the side surface 33a of the frame 30a to form the coating layer 50a. Similarly, the melt of the support substrate 10b and the lid 20 scattered by the irradiation of the laser beam 1 is deposited on the side surface 33b of the frame 30b to form the coating layer 50b. Thereafter, an exterior metal film 51 is formed on the surface of the surface acoustic wave device using, for example, the sputtering method, whereby the surface acoustic wave device 300 of Example 3 as shown in Fig. 14 is formed. Note that the coating layers 50a and 50b are not limited to being formed by the above method, and may be formed by a photolithography method using a photosensitive resin film or an electroless plating method, similar to Example 1.

[0077] [Modification Example] FIG. 17 is a cross-sectional view of the elastic wave device 310 according to a modification of Example 3. As shown in FIG. 17, in the elastic wave device 310, the exterior metal film 51 does not extend to the lower surface of the support substrate 10a and is not directly connected to the ground terminal 18d. A via wiring 13a for electrically connecting the frame body 30a and the ground terminal 18d to the support substrate 10a is provided. The intermediate metal layer 53 is electrically connected to the ground terminal 18d via the frame body 30a and the via wiring 13a. The exterior metal film 51 is electrically connected to the ground terminal 18d via the intermediate metal layer 53, the frame body 30a, and the via wiring 13a. Since other configurations are the same as those in Example 3, the description thereof is omitted.

[0078] [Comparative Example] FIG. 18(a) is a cross-sectional view of the elastic wave device 1200 according to Comparative Example 2, and FIG. 18(b) is a cross-sectional view of the elastic wave device 1300 according to Comparative Example 3. As shown in FIGS. 18(a) and 18(b), in the elastic wave devices 1200 and 1300, an insulating film 58 is provided on the side surface 33a of the frame body 30a instead of the coating layer 50a, and an insulating film 58 is provided on the side surface 33b of the frame body 30b instead of the coating layer 50b. As described above, the insulating film 58 may be formed by the singulation manufacturing process and is thinner than the coating layers 50a and 50b. For this reason, due to the unevenness formed by the support substrate 10a, the frame body 30a, and the support substrate 10b, the exterior metal film 51 may be divided on the support substrate 10a side and the support substrate 10b side in the frame body 30a. Similarly, due to the unevenness formed by the support substrate 10b, the frame body 30b, and the lid 20, the exterior metal film 51 may be divided on the support substrate 10b side and the lid 20 side in the frame body 30b.

[0079] As shown in FIG. 18(a), even if the exterior metal film 51 extends to the lower surface of the support substrate 10a and is directly connected to the ground terminal 18d, since the exterior metal film 51 is segmented in the frame body 30a and the insulating film 58 is formed on the side surface 33a of the frame body 30a, the ground potential is not supplied to the portion of the exterior metal film 51 that covers the side surface 33b of the frame body 30b from the side surface 17b of the support substrate 10b, and the portions that cover the side surface 27 and the upper surface 23 of the lid 20. For this reason, the shielding effect of the electromagnetic wave by the exterior metal film 51 is weakened, and noise countermeasures become insufficient.

[0080] As shown in FIG. 18(b), even if the exterior metal film 51 is electrically connected to the ground terminal 18d via the intermediate metal layer 53, the frame body 30a, and the via wiring 13a, since the exterior metal film 51 is segmented in the frame bodies 30a and 30b and the insulating film 58 is formed on the side surfaces 33a and 33b of the frame bodies 30a and 30b, the ground potential is not supplied to the portion of the exterior metal film 51 that covers the side surface 33a of the frame body 30a from the side surface 17a of the support substrate 10a, and the portions that cover the side surface 27 and the upper surface 23 of the lid 20. For this reason, the shielding effect of the electromagnetic wave by the exterior metal film 51 is weakened, and noise countermeasures become insufficient.

[0081] On the one hand, according to Example 3 and its modified example, as shown in FIGS. 14 and 17, a coating layer 50a is provided to cover the side surface 33a of the frame body 30a, and a coating layer 50b is provided to cover the side surface 33b of the frame body 30b. The exterior metal film 51 is continuously provided from the side surface 52a of the coating layer 50a to the side surface 17b of the support substrate 10b and the side surface 52b of the coating layer 50b to the side surface 27 of the lid 20, and covers the side surface 52a of the coating layer 50a, the side surface 17b of the support substrate 10b, the side surface 52b of the coating layer 50b, and the side surface 27 of the lid 20. As a result, when the exterior metal film 51 is connected to the ground terminal 18d and a ground potential is supplied, the entire exterior metal film 51 becomes a ground potential, so that the shielding effect of electromagnetic waves can be improved. Therefore, the effect of noise countermeasures can be improved. Further, an intermediate metal layer 53 is provided on the surface of the support substrate 10b on the side of the gap 15a, with its side surface 57 located outside the side surface 33a of the frame body 30a and electrically connected to the exterior metal film 51. Thereby, since the intermediate metal layer 53 exhibits the shielding effect of electromagnetic waves, the electromagnetic coupling between the surface acoustic wave device 70 on the piezoelectric layer 11a and the surface acoustic wave device 70 on the piezoelectric layer 11b can be suppressed.

[0082] Also, according to Example 3, as shown in FIG. 14, the exterior metal film 51 is continuously provided from the side surface 17a of the support substrate 10a to the lower surface of the support substrate 10a and is directly connected to the ground terminal 18d. Thereby, the ground performance of the exterior metal film 51 and the intermediate metal layer 53 can be improved, and the shielding effect of electromagnetic waves can be improved.

[0083] Also, according to the modified example of Example 3, as shown in FIG. 17, the intermediate metal layer 53 is electrically connected to the ground terminal 18d via the via wiring 13a. The exterior metal film 51 is electrically connected to the ground terminal 18d via the intermediate metal layer 53 and the via wiring 13a. Even in such a case, since the entire exterior metal film 51 can be set to the ground potential, the shielding effect of electromagnetic waves can be improved.

[0084] In Example 3 and its modifications, from the perspective of the shielding effect of the exterior metal film 51, the exterior metal film 51 preferably covers 70% or more of the total area of the side surface 17a of the support substrate 10a, 70% or more of the total area of the side surface 52a of the coating layer 50a, 70% or more of the total area of the side surface 17b of the support substrate 10b, 70% or more of the total area of the side surface 52b of the coating layer 50b, 70% or more of the total area of the side surface 27 of the lid 20, and 70% or more of the total area of the upper surface 23 of the lid 20. More preferably, it covers 80% or more of each, and even more preferably, it covers 90% or more, which is substantially the entire surface of each.

[0085] In Example 3 and its modifications, from the perspective of suppressing the electromagnetic coupling between the elastic wave element 70 on the piezoelectric layer 11a and the elastic wave element 70 on the piezoelectric layer 11b, it is preferable that the main body portion 54 of the intermediate metal layer 53 covers 50% or more of the lower surface of the support substrate 10b. More preferably, it covers 75% or more, and even more preferably, it covers 90% or more. In a modification of Example 3, in order to improve the ground performance of the intermediate metal layer 53 and the exterior metal film 51, it is preferable that a plurality of via wirings 13a connecting the frame body 30a and the ground terminal 18d are provided. Further, in a modification of Example 3, when the frame body 30a is formed of an insulating material such as resin, a metal pillar may be provided between the support substrate 10a and the intermediate metal layer 53, and the intermediate metal layer 53 may be electrically connected to the ground terminal 18d via this metal pillar and the via wiring.

[0086] In Example 1 as well, similar to the modification of Example 3, an intermediate metal layer electrically connected to the ground terminal 12c via a via wiring penetrating the support substrate 10 may be provided on the surface of the lid 20 on the side of the gap 15. In this case, the exterior metal film 51 may be electrically connected to the ground terminal 12c via the intermediate metal layer and the via wiring without being directly connected to the ground terminal 12c.

[0087] In Example 3 and its modified examples, similar to Modified Example 1 and Modified Example 2 of Example 1, the coating layer 50a may be accommodated inside the outer shapes of the support substrates 10a and 10b, or may protrude outside. The coating layer 50b may be accommodated inside the outer shapes of the support substrate 10b and the lid 20, or may protrude outside. When the coating layer 50a protrudes outside the outer shapes of the support substrates 10a and 10b and the intermediate metal layer 53 and the exterior metal film 51 are not directly connected but are connected via the coating layer 50a, by using a conductive layer for the coating layer 50a, the intermediate metal layer 53 and the exterior metal film 51 can be electrically connected. Also, in Example 3 and its modified examples, similar to Example 2, an elastic wave element 70a may be used instead of the elastic wave element 70.

[0088] In Example 1 and its modified examples, the case where the piezoelectric layer 11 is provided on the support substrate 10 is shown as an example, but the piezoelectric layer 11 may be a thick piezoelectric substrate without providing the support substrate 10. Similarly, in Example 3 and its modified examples, the piezoelectric layers 11a and 11b may be thick piezoelectric substrates without providing the support substrates 10a and 10b.

[0089] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications and changes are possible within the scope of the gist of the present invention described in the claims.

Explanation of Reference Numerals

[0090] 1 Laser light 2 Photosensitive resin film 10, 10a, 10b Support substrates 11, 11a, 11b Piezoelectric layers 12a Input terminal 12b Output terminal 12c Ground terminal 13, 13a, 13b Via wirings 14, 14a, 14b Wirings 15, 15a, 15b Clearances 16 Opening 17, 17a, 17b Side 18a Antenna Terminal 18b Transmission Terminal 18c Reception Terminal 18d Ground Terminal 20 Lid 21 Bonding Layer 22 Body 23 Top Surface 27 Side 30, 30a, 30b Frame 31, 31a, 31b Annular Metal Layer 32, 32a, 32b Annular Bonding Layer 33, 33a, 33b Side 40 Columnar Body 41 Metal Layer 42 Bonding Layer 50, 50a, 50b Coating Layer 51 Exterior Metal Film 52, 52a, 52b Side 53 Intermediate Metal Layer 54 Body Portion 55 Island Portion 56 Gap 57 Side 58 Insulating Film 60 Pillar 61 Metal Layer 62 Bonding Layer 70, 70a Surface Acoustic Wave Element 90 Transmission Filter 91 Reception Filter 92 Ladder-Type Filter 100, 110, 120, 200, 300, 310, 1100, 1200, 1300 Surface Acoustic Wave Device

Claims

1. A substrate, functional elements provided on the substrate, a frame provided on the substrate so as to surround the functional elements in plan view, the side surface on the side opposite to the functional elements being located inside the side surface of the substrate, a lid provided on the frame, the side surface being located outside the side surface of the frame, sandwiching a gap with the substrate and sealing the functional elements in the gap, a coating layer covering the side surface of the frame, and an exterior metal film that continuously covers the side surface of the substrate, the side surface of the coating layer, and the side surface of the lid and is connected to a ground terminal. The electronic component is characterized in that the maximum distance between the side surface of the coating layer and the side surface of the substrate and the side surface of the lid is 1 / 2 or less of the maximum distance between the side surface of the frame and the side surface of the substrate and the side surface of the lid.

2. The lid is formed of a metal material, and the exterior metal film is in direct contact with the lid. The electronic component according to claim 1.

3. The lid is formed to include an insulating material, and the exterior metal film covers the side surface of the lid and the surface of the lid opposite to the gap. The electronic component according to claim 1.

4. The ground terminal is provided on a second surface opposite to a first surface on which the functional elements of the substrate are provided, and the exterior metal film is continuously provided from the side surface of the substrate to the second surface of the substrate and is directly connected to the ground terminal. The electronic component according to any one of claims 1 to 3.

5. Another substrate provided under the substrate, other functional elements provided on the surface of the other substrate on the substrate side, another frame provided between the other substrate and the substrate so as to surround the other functional elements in plan view, the side surface on the side opposite to the other functional elements being located inside the side surface of the substrate and the side surface of the other substrate, and sealing the other functional elements in another gap between the other substrate and the substrate, an intermediate metal layer provided to cover the surface of the substrate on the other gap side, the side surface being located outside the side surface of the other frame and being electrically connected to the exterior metal film, and another coating layer covering the side surface of the other frame. The electronic component is characterized in that the exterior metal film continuously covers the side surface of the other coating layer, the side surface of the substrate, the side surface of the coating layer, and the side surface of the lid. The electronic component according to any one of claims 1 to 3.

6. The ground terminal is provided on a second surface opposite to a first surface on which the other functional elements of the other substrate are provided, The electronic component according to claim 5, wherein the exterior metal film is provided continuously from a side surface of the other substrate to the second surface of the other substrate and is directly connected to the ground terminal.

7. The ground terminal is provided on a second surface of the other substrate opposite to a first surface on which the other functional element of the other substrate is provided. The intermediate metal layer is electrically connected to the ground terminal via a via wiring provided on the other substrate. The electronic component according to claim 5, wherein the exterior metal film is electrically connected to the ground terminal via the intermediate metal layer and the via wiring.

8. The electronic component according to any one of claims 1 to 7, wherein the functional element is an elastic wave element.

9. The electronic component according to claim 8, wherein a filter is formed by the elastic wave element.

10. The electronic component according to claim 9, wherein a multiplexer is formed by the filter.

Images