Plenum assembly for cooling a transformer-coupled plasma window

Abstract

A plenum for a dielectric window of a substrate processing system includes a first inlet port, a second inlet port, and a body including a first recess configured to hold a first coil, a second recess configured to hold a second coil, a third recess facing a first region of the dielectric window and configured to receive a first coolant from the first inlet port and direct the first coolant across the first region to cool a first portion of the dielectric window, and a fourth recess facing a second region of the dielectric window and configured to receive a second coolant from the second inlet port and direct the second coolant across the second region to cool a second portion of the dielectric window.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 62 / 968,305, filed on January 31, 2020. The above - mentioned application is hereby incorporated by reference in its entirety.

[0002] The present disclosure relates to the cooling of a transformer - coupled plasma window.

Background Art

[0003] The background description provided herein is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, the research by the inventors named at the present time, and aspects of the description that cannot be separately regarded as prior art at the time of filing the application, whether explicitly or implicitly, are not recognized as prior art against the present disclosure.

[0004] During the manufacture of semiconductor devices, etching processes or deposition processes may be performed in a processing chamber. An ionized gas or plasma is introduced into a plasma chamber to etch (or remove) material from a substrate such as a semiconductor wafer and to sputter or deposit material on the substrate. The creation of the plasma used in the manufacturing or fabrication process usually begins with introducing a process gas into the processing chamber. The substrate is placed in the processing chamber on a substrate support such as an electrostatic chuck or pedestal.

[0005] The processing chamber may include a transformer coupled plasma (TCP) reactor coil. A radio frequency (RF) signal generated by a power supply is supplied to the TCP reactor coil. The TCP reactor coil is driven by a transformer coupled capacitive tuning (TCCT) matching network. The TCCT matching network receives the RF signal supplied from the power supply and enables adjustment of the power supplied to the TCP reactor coil. A dielectric window made of a material such as ceramic is incorporated on the upper surface of the processing chamber. The dielectric window enables transmission of the RF signal from the TCP reactor coil into the interior of the processing chamber. The RF signal excites gas molecules in the processing chamber and generates plasma. SUMMARY OF THE INVENTION

[0006] A plenum for a dielectric window of a substrate processing system is provided. The plenum includes a first inlet port, a second inlet port, and a body. The body includes a first configured to hold a first coil Concave region and a second configured to hold a second coil Concave region and a third configured to face a first region of the dielectric window, receive a first coolant from the first inlet port, direct the first coolant across the first region, and cool a first portion of the dielectric window Concave region and a fourth configured to face a second region of the dielectric window, receive a second coolant from the second inlet port, direct the second coolant across the second region, and cool a second portion of the dielectric window. Concave region and includes.

[0007] In other features, the body faces a third region of the dielectric window and is configured to receive the first coolant from the third and direct the first coolant across the third region to cool a third portion of the dielectric window. Concave region In other features, the plenum includes a fifth configured to receive the first coolant from the fifth Concave region and includes. In other features, the plenum is the fifthConcave region It is arranged and further includes a backup passage for receiving a third coolant. In other features, the third coolant is compressed dry air.

[0008] In other features, the third Concave region is circular and guides the first coolant toward an output arranged at the center of the plenum. The fourth Concave region is circular and guides the second coolant to an output along the periphery of the plenum.

[0009] In other features, the first Concave region and the second Concave region are on the upper surface side of the plenum. The third Concave region and the fourth Concave region are on the bottom surface side of the plenum. In other features, the second Concave region , the third Concave region , and the fourth Concave region are each a channel.

[0010] In other features, the body is circular. In other features, the body is formed in a shape and size that fits the outer peripheral edge of the dielectric window. In other features, the body includes a backup passage for cooling at least one of the third Concave region or the fifth Concave region .

[0011] In other features, the third Concave region extends radially and includes a guide that guides the first coolant from the first inlet port to a centrally arranged output. In other features, the third Concave region extends annularly and includes a guide that guides the first coolant in an annular direction.

[0012] In other features, the third Concave regionincludes at least one of a divider or a radially extending guide. The at least one of the annularly extending guide and the divider or the radially extending guide guides the first coolant from the first inlet port to a centrally disposed outlet.

[0013] In other features, a system is provided, the system including the plenum and at least one coolant supply source that supplies the first coolant to the first inlet port and supplies the second coolant to the second inlet port. In other features, the first coolant is different from the second coolant. In other features, the first coolant is different from the second coolant in at least one of flow rate or pressure. In other features, the first coolant is compressed dry air and the second coolant is atmospheric air.

[0014] In other features, a system is provided, the system including the plenum, the dielectric window, and at least one of a valve or a mass flow controller configured to adjust at least one of the flow rate or pressure of the first coolant and at least one of the flow rate or pressure of the second coolant.

[0015] In other features, a system is provided, the system including the plenum and the dielectric window. The third Concave region forms a first channel with the dielectric window. The fourth Concave region forms a second channel with the dielectric window.

[0016] In other features, the system further includes a temperature sensor that detects the temperature of the dielectric window or the temperature of the plenum, and a controller configured to adjust at least one of the flow rate of the first coolant or the flow rate of the second coolant based on the output of the temperature sensor.

[0017] In other features, a plenum for a transformer-coupled plasma window is provided. The plenum includes a first inlet port, a second inlet port, a backup port, and a body having a circular Concave region , a first channel, a second channel, a third channel, and a fourth channel. The circular Concave region is configured to hold a first coil. The first channel is configured to hold a second coil. The second channel is provided on the opposite side of the circular Concave region of the body and the first channel. The second channel faces a first region of the dielectric window, receives a first coolant from the first inlet port, and is configured to guide the first coolant across the first region to cool a first portion of the dielectric window. The third channel is on the opposite side of the circular Concave region of the body and the first channel and is disposed radially inward of the second channel. The third channel faces a second region of the dielectric window, receives a second coolant from the second inlet port, and is configured to guide the second coolant across the second region to cool a second portion of the dielectric window. The fourth channel is on the opposite side of the circular Concave region of the body and the first channel and is disposed radially inward of the third channel. The fourth channel faces a third region of the dielectric window, receives a third coolant from the backup port, and is configured to guide the third coolant across the third region to cool a third portion of the dielectric window. In other features, the third channel is deeper than the fourth channel and guides the second coolant to the fourth channel.

[0018] Further applicable ranges of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and do not limit the scope of the present disclosure.

[0019] The present disclosure will be more clearly understood by the detailed description and the accompanying drawings described below.

Brief Description of the Drawings

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[0036] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

DETAILED DESCRIPTION OF THE INVENTION

[0037] The plenum assembly can be incorporated into the TCP window and used to cool the TCP window. A coolant (e.g., a cooling gas) passes over the TCP window through the plenum assembly to cool the TCP window. The plenum assembly may include a plenum having a cooling zone through which the coolant passes. The plenum is disposed between the TCP reactor coil and the TCP window. If there is one plenum for the cooling zone, overheating may occur at or near the center and / or outer peripheral edge of the plenum during processes such as center hot or edge hot. This overheating may, for example, limit the processing capacity supplied to the TCP reactor coil. As a result, the processing power is limited so that thermal stress and / or cracks do not occur in the TCP window.

[0038] Examples described herein include plenums having a strip structure for improving and efficiently cooling the TCP window. These plenums have different structural patterns and corresponding different coolant flow patterns. These plenums enable an improvement in processing capacity and an improvement in the overall system performance. These plenums provide a wide range of solutions for cooling the TCP window, expand the capabilities of the etching tool to operate at a higher power level, and prevent cracks in the TCP window by minimizing the temperature gradient across the TCP window. These plenums can be applied to different TCP reactor coils and to each of the edge hot and center hot processes, covering a large spectrum of processing power. These plenums can be applied to various different etching tools having a TCP window and can be used in various different plasma processes. Also, these plenums improve temperature control and help prevent overheating and overcooling.

[0039] In some examples, the plenum cools the entire corresponding TCP window and covers the entire upper surface area of the TCP window. Each plenum includes a plurality of zones (e.g., two or more separate cooling zones) and may also include a backup zone. As an example, the azimuthal temperature uniformity achieved by the plenum is ±5°C, and the power capacity of the corresponding tool can be 6 kilowatts (kW). Azimuthal temperature uniformity refers to the maximum temperature difference across the entire TCP window at any point during processing. A large temperature change across the entire TCP window results in a large thermal stress on the TCP window. By minimizing the maximum temperature difference of the TCP window, the processing capacity can be improved. The addition of a backup cooling zone adds cooling capacity and can further improve the processing capacity. The backup cooling zone prevents the TCP window from exceeding 150°C, thereby preventing damage to the TCP window. For example, at temperatures above 150°C, peeling of the coating on the TCP window can occur.

[0040] FIG. 1 shows a first portion 100 of a plasma processing system including a plenum cooling system, a plasma processing chamber 112, and a TCP reactor coil 114. FIG. 1 shows a part of the plenum cooling system. FIG. 2 shows an example of the remaining portion of the plasma cooling system. The plenum cooling system includes a plenum 115 disposed between the TCP reactor coil 114 and a dielectric (or TCP) window 116. The plenum 115 receives a coolant via an inlet line 118 (e.g., a pipe). The coolant circulates and / or passes through the portion between the plenum 115 and the dielectric window 116. The plenum 115 and other plenums disclosed herein can be formed of, for example, polyphenylene sulfone (PPSU), polyether ether ketone (PEEK), polyamideimide, polyimide-based plastics, and / or polytetrafluoroethylene (PTFE), and / or other substances having appropriate electrical properties and meeting the requirements of dielectric tangent, loss tangent, and dielectric constant. In one embodiment, one or more of the plenums are injection molded. The plenum is easy to access and install, and for at least that reason, easy to maintain. Examples of plenums are shown in FIGS. 3-5 and FIGS. 8-16.

[0041] The plenum 115 may include a plurality of circular-shaped Concave region (or channels) 120 in which the TCP reactor coil 114 (e.g., an inner coil and an outer coil) is disposed. The TCP reactor coil 114 is disposed above at least a part of the plenum 115. A first power supply 121 supplies a first RF source signal to a TCCT matching network 122. The TCCT (or first) matching network 122 is included between the first power supply 121 and the TCP reactor coil 114. The TCCT matching network 122 enables adjustment of the power supplied to the TCP reactor coil 114.

[0042] The dielectric window 116 is disposed adjacent to the plenum 115, located above the pinnacle 119 (pinnacle is a registered trademark), and enables efficient transmission of the first RF source signal for plasma generation to the plasma processing chamber 112. The pinnacle means the upper liner of the processing chamber and can be configured to support the dielectric window. At the bottom of the plasma processing chamber 112, a substrate support 123 such as an electrostatic chuck, a pedestal, or other suitable substrate support is disposed. The substrate support 123 supports the substrate 125. When the substrate support 123 is an electrostatic chuck, the substrate support 123 includes conductive portions 124 and 126 that are electrically insulated from each other. The substrate support 123 is surrounded by an insulator 128 and is capacitively coupled to the substrate 125. By applying a DC voltage to the conductive portions 124 and 126, an electrostatic coupling is generated between the conductive portions 124 and 126 and the substrate 125. This electrostatic coupling draws the substrate 125 towards the substrate support 123.

[0043] The plasma processing system further includes a bias RF power source 130, and the bias RF power source 130 is connected to a bias (or second) matching network 132. The second matching network 132 is connected between the bias RF power source 130 and the substrate support 123. The second matching network 132 matches the impedance of the bias RF power source 130 (e.g., 50 Ω) to the impedance of the substrate support 123 of the plasma processing chamber 112 and the plasma 134 as seen from the second matching network 132.

[0044] The plasma processing system further includes a voltage control interface (VCI) 140. The VCI 40 can include a pickup device 142, a voltage sensor 144, a controller 146, and a circuit between the voltage sensor 144 and the controller 146. The pickup device 142 extends to the substrate support 123. This pickup device 142 is connected to the voltage sensor 144 via a conductive wire 148 and is used to generate an RF voltage signal.

[0045] The operation of the voltage sensor 144 can be monitored, manually controlled, and / or controlled via the controller 146. The controller 146 may display the output voltage of the channels of the voltage sensor 144 on the display 150. The display 150 is shown as a separate unit from the controller 146, but may be included in the controller 146. The system operator can provide an input signal indicating (i) whether to switch channels, (ii) which of one or more channels to activate, and / or (ii) which of one or more channels to deactivate.

[0046] During operation, an ionizable gas flows into the plasma processing chamber 112 through the gas inlet 156 and out of the plasma processing chamber 112 through the gas outlet 158. The first RF signal is generated by the RF power source 121 and sent to the TCP reactor coil 114. The first RF signal is emitted from the TCP reactor coil 114 into the plasma processing chamber 112 through the dielectric window 116. Thereby, the gas in the plasma processing chamber 112 is ionized and the plasma 134 is formed. The plasma 134 generates a sheath 160 along the wall surface of the plasma processing chamber 112. The plasma 134 contains electrons and positive charge ions. Since electrons are much lighter and easier to move than positive charge ions, a DC bias voltage and a DC sheath potential are generated on the inner surface of the plasma processing chamber 112. The average DC bias voltage and the DC sheath potential of the substrate 125 affect the energy at which the positive charge ions collide with the substrate 125. This energy affects process characteristics such as the etching and deposition rates.

[0047] The controller 146 can adjust the bias RF signal generated by the RF power source 130 to vary the DC bias amount and / or the DC sheath potential on the substrate 125. The controller 146 can compare the output of the channels of the voltage sensor 144 and / or a representative value derived based on the channel output with one or more set values. Note that the values of the set values may be preset and stored in the memory 162 of the controller 146. The bias RF signal can be adjusted based on the difference between (i) the output of the voltage sensor 144 and / or the representative value and (ii) one or more set values. The bias RF signal passes through the second matching network 132. Further, the output supplied by the second matching network 132 (referred to as the matching signal) is sent to the substrate support 123. The bias RF signal is sent to the substrate 125 via the insulator 128.

[0048] FIG. 2 shows a second portion 200 of the plasma processing system, and the second portion 200 includes a gas supply system 202 for the gas injector 204 and a coolant supply system 206 for the plenum 115. The TCP reactor coil 114 is disposed in the channels of the plenum 115 and receives an RF signal from the power supply 121 via the TCCT matching network 122.

[0049] The gas supply system 202 includes a controller 46 and a gas supply assembly 230 including one or more gas sources 232-1, 232-2, ..., and 232-N (collectively referred to as gas source 232). N is an integer greater than 0. The gas source 232 supplies one or more gases (such as etching gas, carrier gas, purge gas, etc.) and mixtures thereof. Also, the gas source 232 may supply a purge gas. The gas source 232 is connected to the manifold 240 via valves 234-1, 234-2, ... 234-N (collectively referred to as valve 234), and mass flow controllers 236-1, 236-2, ... 236-N (collectively referred to as mass flow controller 236). The output of the manifold 240 is supplied to the plasma processing chamber 112 of FIG. 1. By way of example only, the output of the manifold 240 is the injector 204. Note that the controller 46 may control the operation of the valve 234 and the mass flow controller 236.

[0050] The coolant supply system 206 includes a controller 46, two or more coolant supply sources (shown as coolant supply sources 250-1, 250-2 in the figure), two or more valves (shown as valves 252-1, 252-2 in the figure), and two or more mass flow controllers (shown as mass flow controllers 254-1, 254-2 in the figure). The controller 46 controls the operation of the valve 252 and the mass flow controller 254. Coolant is supplied from the coolant supply source 250 to the inlet line 118 via the valve 252 and the mass flow controller 254. Note that two coolant supply sources, two valves, and two mass flow controllers are shown, but additional coolant supply sources, two coolant zone valves, additional coolant supply sources, mass flow controllers, and valves may also be included. In one embodiment, two coolant zones and a centrally located backup coolant zone each implement a coolant supply source, a valve, and a mass flow controller.

[0051] As an example, a supply set including a coolant source, a valve, and a mass flow controller can be provided to each inlet port and / or backup passage of the plenum described below. In one embodiment, a supply set including a coolant source, a valve, and a mass flow controller is provided to each pair of inlet ports and / or backup passages. For example, a first supply set is provided to the middle Concave region and a second supply set is provided to the outside Concave region and a third supply set is provided to a pair of backup passages for supply to the center Concave region .

[0052] While operating in the first mode, the controller 46 can perform cooling via the first and second supply sets, and while operating in the second mode, can perform cooling via the first, second, and third supply sets. The second mode is used to perform additional cooling. Also, the controller 46 may adjust the flow rate of the coolant based on the temperature of the dielectric window 116 during the first mode and the second mode. The temperature can be detected via the temperature sensor 260. In one embodiment, the temperature sensor is disposed at a predetermined location in the region of the dielectric window where the dielectric window becomes hottest during processing. The temperature sensor 260 can be included in any number. One or more temperature sensors can be included in each of the cooling zones, channels, passages, Concave region and the like. The temperature sensor can be mounted within or on the plenum 115 and / or on the dielectric window 116. The flow rate of the coolant to one or more regions of the plenum 115 can be adjusted based on one or more temperatures of the same one or more regions of the plenum 115 and / or one or more temperatures of one or more other regions of the plenum 115.

[0053] In one embodiment, the source set is configured to: (i) supply compressed dry air to one or more central zones of the plenum 115; and (ii) supply atmospheric pressure air to one or more intermediate zones and / or one or more outer zones of the plenum 115. Examples of the central zone, the intermediate zone, and the outer zone are shown in FIGS. 4-16. In one embodiment, the air supplied to one or more intermediate zones and / or one or more outer zones is amplified air supplied through one or more air amplifiers. One or more mass flow controllers may include an air amplifier. An air amplifier increases the amount of air supplied within a certain period of time.

[0054] FIG. 3 shows a processing chamber 300 including: (i) a dielectric window 304; and (ii) a plenum 302 disposed between a TCP reactor coil 306 and an alignment member 308. The plenum 302 may be disposed within an outer ring 310 disposed on a pinnacle 312. The alignment member 308 is disposed on an inner shelf of the outer ring 310 to align the plenum 302 over the dielectric window 304. In the illustrated example, two TCP reactor coils 306 are shown and are disposed in inner channels 320 and outer channels 322 (referred to as coil channels) on the upper surface side of the plenum 302. The plenum 302 also includes two lower (or coolant) channels 324, 326 for circulating and / or passing a coolant therethrough. The coolant may be supplied to the channels 324, 326 via a passage (or pipe) 330. The plenum may include a third channel, also referred to as a central (or most central) channel and / or a backup channel. Examples of the central channel and / or the backup channel are shown in FIGS. 4-16.

[0055] The TCP reactor coil 306 can receive power via a line 332 and return power via a line 334. The injector 340 extends through the alignment member 308, the plenum 302, and the dielectric window 304 and may be fixed over the dielectric window 304. The injector 340 injects a gas toward a substrate 350 disposed on a substrate support 352.

[0056] Figures 4 to 6 show a plenum 400 having a first strip structure and a corresponding first flow pattern. The plenum 400 can replace one of the plenums described above and has a first center Concave region 404, a raised middle portion 406, an outer channel 408, and a raised outer shelf 410. The first center Concave region 404 is configured for an inner TCP reactor coil and is located on the bottom side of the plenum 400 above the second and third centers Concave region 411, 412. The plenum 400 can include a backup passage 413 for supplying a coolant to the second and third centers Concave region 411, 412. The backup passage 413 is arranged along the outer wall edge 416 of the first center Concave region 404 on the upper surface side of the plenum 400 and can be used to supply gas to the second and third centers Concave region 411, 412 on the bottom side of the plenum 400.

[0057] The raised middle portion 406 can include a guide pair 420. Between the guide pairs 420, a part of an alignment member (for example, the alignment member 308 in FIG. 3) is arranged. The raised middle portion 406 is a region between the inner TCP reactor coil arranged in the first center Concave region 404 and the outer TCP reactor coil arranged in the outer channel 408, and corresponds to the middle Concave region 417, 418 on the bottom side of the plenum 400. The raised middle portion 406 includes two inlet ports 430. The inlet ports 430 are the middle Concave region 417, 418 and are used to supply a coolant. The middle Concave region 417, 418 guide the coolant circularly towards the inlets 429, 431 of the second and third centers Concave region 411, 412.

[0058] The second and third centers Concave region411 and 412 are used to guide the coolant received from port 430 circularly towards the central opening 414 and discharge it from the central opening 414. The coolant can be discharged from the central opening 414 into the gap between the inner edge of the plenum 400 and the injector (e.g., injector 340 in FIG. 3). The injector is disposed in the central opening 414. Thus, the second and third central Concave region 411, 412 and intermediate Concave region 417, 418 function effectively as channels, central Concave region 411, 412 and intermediate Concave region 417, 418 have side walls for guiding the coolant to the corresponding regions to cool the respective portions of the dielectric window (e.g., the dielectric window in FIG. 2) facing 417, 418.

[0059] The outer channel 408 is configured to hold the outer TCP reactor coil and corresponds to the outer ridge 432 on the bottom side of the plenum 400. The raised outer shelf 410 includes two inlet ports 434 that supply coolant to the outer channel 440 on the bottom side of the plenum 400. The coolant is supplied from the ports 434 to the outer channel 440 and is output at the opening 442 of the outermost wall 444 of the plenum 400. The outer channel 440 thus guides the coolant to the corresponding regions and cools the respective portions of the dielectric window (e.g., the dielectric window in FIG. 2) facing the outer channel 440.

[0060] Due to the structure of the plenum 400, the coolant flows in a certain pattern through the passage formed by the plenum 400 and the corresponding dielectric window. A part of the passage is Concave region provided by 411, 412, 417, 418 and the outer channel 440, and the other opposing part of the passage is provided by the top surface of the corresponding dielectric window. In one embodiment, there is no seal between the plenum 400 and the dielectric window. The coolant flows in a certain pattern across the dielectric window. Concave region 411, 412 are Concave region at a deeper position than 417, 418. The outer channel (or Concave region)440 may have the same depth as Concave region 417 and 418.

[0061] FIG. 7 is a thermal diagram 700 showing an example of the air temperature above the corresponding dielectric window and below the plenum 400. The plenum 400 Concave region includes 411, 412, 417, 418, the central opening 414, and the outer channel 440. The temperature bar 702 shows the lowest temperature at the bottom of the temperature bar 702 and the highest temperature at the top of the temperature bar 702. The hottest region is designated as 710 and the coldest region as 712.

[0062] FIGS. 8-9 show a plenum 800 having a second strip structure and a corresponding second flow pattern. The plenum 800 can replace one of the above-described plenums and has a body 802 having a first central Concave region 804, a raised intermediate portion 806, an outer channel 808, and a raised outer shelf 810. The first central Concave region 804 is configured for the inner TCP reactor coil and is located above the second and third central Concave region 811, 812 on the bottom side of the plenum 800. The plenum 800 may include a backup passage 813 for supplying coolant to the second and third central Concave region 811, 812. The backup passage 813 is arranged along the edge of the outer wall 816 of the first central Concave region 804 on the top side of the plenum 800 and can be used to supply gas to the second and third central Concave region 811, 812 on the bottom side of the plenum 800.

[0063] The raised intermediate portion 806 is the region between the inner TCP reactor coil arranged in the first central Concave region 804 and the outer TCP reactor coil arranged in the outer channel 808, and corresponds to the circular intermediate Concave region 817 on the bottom side of the plenum 800. The raised intermediate portion 806 includes two inlet ports 830. The inlet ports 830 Concave region are used to supply coolant to the intermediate Concave region817 each guide the coolant circularly towards the inlets 829, 831 of 811, 812 to the second and third centers. Concave region 811 and 812 are used to guide the coolant received from port 830 circularly towards the central opening 814 and to discharge it from the central opening 814. The coolant can be discharged from the central opening 814 into the gap between the inner edge of the plenum 800 and the injector (for example, injector 340 in FIG. 3). The injector is disposed in the central opening 814. To the second and third centers

[0064] To the second and third centers Concave region 811 and 812 are used to guide the coolant received from port 830 circularly towards the central opening 814 and to discharge it from the central opening 814. The coolant can be discharged from the central opening 814 into the gap between the inner edge of the plenum 800 and the injector (for example, injector 340 in FIG. 3). The injector is disposed in the central opening 814. To the second and third centers Concave region 811, 812 and intermediate Concave region 817 is configured as a channel and has sidewalls for guiding the coolant to corresponding regions to cool respective portions of the dielectric window (for example, the dielectric window in FIG. 2) facing 811, 812 and intermediate 817 to the second and third centers Concave region 811, 812 and intermediate Concave region 817 is configured as a channel and has sidewalls for guiding the coolant to corresponding regions to cool respective portions of the dielectric window (for example, the dielectric window in FIG. 2) facing 811, 812 and intermediate 817.

[0065] The outer channel 808 is configured to hold the outer TCP reactor coil and corresponds to the outer bulge 832 on the bottom side of the plenum 800. The raised outer shelf 810 includes two inlet ports 834 for supplying the coolant to the outer channel 840 on the bottom side of the plenum 800. The coolant is supplied from the ports 834 to the outer channel 840 and is output at the opening 842 of the outermost wall 844 of the plenum 800. The outer channel 840 thus guides the coolant to the corresponding region and cools respective portions of the dielectric window (for example, the dielectric window in FIG. 2) facing the outer channel 840.

[0066] Due to the structure of the plenum 800, the coolant flows in a certain pattern through the passage formed by the plenum 800 and the corresponding dielectric window. A part of the passage is Concave regionProvided by 811, 812, 817 and the outer channel 840, the other opposing portions of the passage are provided by the top surface of the corresponding dielectric window. In one embodiment, there is no seal between the plenum 800 and the dielectric window. The coolant flows in a constant pattern across the dielectric window.

[0067] The plenum 800 is similar to the plenum 400. The backup port 813 is in a different position and has a different shape from the backup port 413. Central Concave region 811 and 812 have different shapes and have a larger inlet than the central Concave region 411 and 412. The plenum 800 includes a single intermediate Concave region (or channel) 817, while the intermediate Concave region 417 and 418 in FIG. 5 extend from the port 430.

[0068] FIG. 10 shows a plenum 1000 that is similar to the plenums 400 and 800 of FIGS. 4 and 8 but has a different structure. The plenum 1000 is shown as an example for explaining the coolant supply line 1002 for the corresponding cooling zone. The coolant supply line 1002 supplies coolant to the port 1004. The plenums 400 and 800 of FIGS. 4 and 8 may have similar supply lines. The plenum 1000 includes a central Concave region 1010 having an output 1012, an intermediate channel 1014, and an outer channel 1016. The central Concave region 1010 includes a backup passage (or port) 1018.

[0069] FIGS. 11-12 show a plenum 1100 having a third strip structure and a corresponding third flow pattern. On the upper surface side, the plenum 1100 includes a central Concave region 1102, an intermediate ridge 1104, and an outer Concave region 1106. The central Concave region 1102 and the outer Concave region 1106 are configured to hold the TCP reactor coil. The central Concave region1102 includes a backup passage 1110 and an output 1112.

[0070] The intermediate raised portion 1104 includes an inlet port 1114. The intermediate raised portion 1104 is on the bottom surface side of the plenum 1100 Concave region to provide 1120. At the center Concave region On the opposite side of 1102, a center having an outer circular edge 1124 and an inwardly radially extending guide 1126 Concave region 1122 is provided. The outer circular edge 1124 is at the bottom of the side wall 1128 of the center Concave region 1102. The backup passage 1110 has an output channel 1130 that extends annularly in the circumferential direction along the inside of the outer circular edge 1124. The radially extending guide 1126 guides the coolant received from the annularly extending output channel 1130 toward the output 1112.

[0071] FIG. 13 shows a quarter side cross-sectional view of the plenum 1100 on the dielectric window 1300. The plenum 1100 includes a center Concave region 1102, an intermediate raised portion 1104, and an outer Concave region 1106. The intermediate raised portion 1104 includes an inlet port (one is shown in FIG. 13). One of the backup passages 1110 is also shown. The dielectric window 1300 is shown on the pinnacle 1302.

[0072] FIGS. 14-15 show a plenum 1400 having a fourth strip structure and a corresponding fourth flow pattern. On the upper surface side, the plenum 1400 includes a center Concave region 1402, an intermediate raised portion 1404, and an outer Concave region 1406. The center Concave region 1402 and the outer Concave region 1406 are configured to hold a TCP reactor coil. The center Concave region 1402 includes a backup passage 1410 and an output 1412.

[0073] The intermediate raised portion 1404 includes an inlet port 1414. The intermediate raised portion 1404 is on the bottom surface side of the plenum 1400 Concave region to provide 1420. At the centerConcave region On the opposite side of 1402, there is a central part having a divider 1426 that provides a half-section 1428 to a guide 1430 extending annularly inward and a guide 1432 extending radially, and an outer circular edge 1424. Concave region 1422 is provided. The outer circular edge 1424 is the bottom of the side wall 1438 of the central Concave region 1402. The backup passage 1410 has an output channel 1440 that extends annularly circumferentially along the inside of the outer circular edge 1424. The annularly extending guide 1430 guides the coolant received from the annularly extending output channel 1440 toward the output 1412. The divider 1426, the annularly extending guide 1430, and the radially extending guide 1432 provide a channel having an output 1442 and guide the coolant from the annularly extending output channel 1440 to the output 1412.

[0074] FIG. 16 shows a quarter side cross-sectional view of the plenum 1400 on the dielectric window 1600. The plenum 1400 includes a central Concave region 1402, an intermediate raised portion 1404, and an outer Concave region 1406. The intermediate raised portion 1404 includes an inlet port (one is shown in FIG. 16). One of the backup passages 1410 is also shown. The dielectric window 1600 is shown on the pinnacle 1602.

[0075] The above examples minimize the temperature difference across the dielectric window. As an example, the embodiments of FIGS. 4-6 can exhibit a maximum temperature difference of 8° C. during processing. The maximum temperature difference is the difference between the lowest and highest temperatures at each position on the plenum at any point during processing. This prevents thermal stress on the dielectric window.

[0076] The foregoing description is, in essence, merely exemplary and is not intended to limit the disclosure, its application, or use. The broad teachings of the disclosure can be implemented in a variety of forms. Accordingly, other modifications of the disclosure will be apparent from a review of the drawings, the specification, and the following claims, and although the disclosure includes specific examples, the true scope of the disclosure is not limited to such specific examples. In one way, one or more steps can be performed in a different order (or simultaneously) without changing the principles of the disclosure. Also, while each embodiment is described as having certain features, one or more of the features described with respect to each embodiment of the disclosure can be implemented using any of the features of other embodiments and / or combined with any of the features of other embodiments, even if the combination is not explicitly described. In other words, the above embodiments are not mutually exclusive, and each permutation of combining one or more embodiments with each other is within the scope of the disclosure.

[0077] The spatial and functional relationships of each element (e.g., module, circuit element, semiconductor layer, etc.) are described using various terms such as "connected", "engaged", "coupled", "adjacent", "next to", "on top of", "above", "below", "disposed", etc. Also, when the relationship between a first and a second element is described in the above disclosure, unless explicitly stated as "direct", the relationship can be a direct relationship where no other intervening elements exist between the first and second elements, but can also be an indirect relationship where one or more intervening elements exist (spatially or functionally) between the first and second elements. In this specification, the expression "at least one of A, B, and C" should be interpreted to mean a logic (A or B or C) using non-exclusive logical OR, and is not interpreted as "at least one of A, at least one of B, and at least one of C".

[0078] In some implementations, the controller is part of a system that can be part of the examples described above. Such a system can comprise semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may also be referred to as a "controller" that enables control of various components or sub-parts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system, including delivery of processing gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid delivery setting, position and motion setting, transfer of wafers to and from tools and other transfer tools connected or interfaced to a particular system and / or load locks.

[0079] Generally, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software, which receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, and so on. The integrated circuits may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions may be instructions transmitted to the controller in the form of various individual settings (or program files), and define operation parameters for performing a specific process on or in relation to a semiconductor wafer, or for a system. In some embodiments, the operation parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0080] In some implementations, the controller may be integrated with, coupled to, or if not, network-connected to the system, or may be part of or coupled to a computer which is a combination thereof. For example, the controller may perform wafer processing by remote access within a "cloud" or as part of all or part of a fab host computer system. The computer may enable remote access to the system, monitor the current progress of the manufacturing operation, investigate the history of past manufacturing operations, investigate trends or performance criteria from multiple manufacturing operations, change the parameters of the current process, set process steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables the input or programming of parameters and / or settings, and these parameters and / or settings are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data, and the instructions specify the parameters for each of the process steps to be performed during one or more operations. The parameters can be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers, etc., and the one or more discrete controllers are collectively network-connected and operate with a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer), and are combined to control the process on the chamber.

[0081] As an example of a system, it may include, but is not limited to, a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system related to or usable in the fabrication and / or manufacture of semiconductor wafers.

[0082] As described above, depending on one or more process steps performed by a tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, proximity tools, neighboring tools, tools disposed throughout the factory, a host computer, another controller, or a tool used for the material transfer of loading and unloading a wafer container to and from a tool location and / or a load port within a semiconductor manufacturing facility. Note that the present disclosure may be implemented in the following forms. [Form 1] A plenum for a dielectric window of a substrate processing system, comprising: a first inlet port; a second inlet port; and a body, wherein the body comprises a first concave region configured to hold a first coil; a second concave region configured to hold a second coil; a third concave region facing a first region of the dielectric window, receiving a first coolant from the first inlet port, and configured to guide the first coolant across the first region to cool a first portion of the dielectric window; and a fourth concave region facing a second region of the dielectric window, receiving a second coolant from the second inlet port, and configured to guide the second coolant across the second region to cool a second portion of the dielectric window. [Form 2] The plenum according to Form 1, wherein the body further comprises a fifth concave region facing a third region of the dielectric window, receiving the first coolant from the third concave region, and configured to guide the first coolant across the third region to cool a third portion of the dielectric window. [Form 3] The plenum according to form 2, further including a backup passage that is disposed in the fifth concave region and receives a third coolant. [Form 4] The plenum according to form 3, wherein the third coolant is compressed dry air. [Form 5] The plenum according to form 1, wherein the third concave region is circular and guides the first coolant toward an output disposed at the center of the plenum. The plenum according to form 1, wherein the fourth concave region is circular and guides the second coolant to an output along the periphery of the plenum. [Form 6] The plenum according to form 1, wherein the first concave region and the second concave region are on the upper surface side of the plenum. The plenum according to form 1, wherein the third concave region and the fourth concave region are on the bottom surface side of the plenum. [Form 7] The plenum according to form 1, wherein the second concave region, the third concave region, and the fourth concave region are each a channel. [Form 8] The plenum according to form 1, wherein the main body is circular. [Form 9] The plenum according to form 1, wherein the main body is formed in a shape and size that conforms to the outer peripheral edge of the dielectric window. [Form 10] The plenum according to form 1, wherein the main body includes a backup passage for cooling at least one of the third concave region and the fifth concave region. [Form 11] The plenum according to form 1, wherein the third concave region includes a guide that extends in the radial direction and guides the first coolant from the first inlet port to an output disposed at the center. [Form 12] The plenum according to form 1, wherein the third concave region includes a guide that extends annularly and guides the first coolant in the annular direction. [Form 13] The plenum according to form 12, wherein the third concave region includes at least one of a divider or a guide extending in the radial direction. The plenum according to form 12, wherein the annularly extending guide and the at least one of the divider or the guide extending in the radial direction guide the first coolant from the first inlet port to an output disposed at the center. [Form 14] A system comprising the plenum according to Form 1, the system comprising at least one coolant supply source for supplying the first coolant to the first inlet port and the second coolant to the second inlet port. [Form 15] A system according to Form 14, wherein the first coolant is different from the second coolant. [Form 16] A system according to Form 14, wherein the first coolant is different from the second coolant in at least one of flow rate or pressure. [Form 17] A system according to Form 14, wherein the first coolant is compressed dry air and the second coolant is atmospheric air. [Form 18] A system comprising the plenum according to Form 1, the dielectric window, and at least one of a valve or a mass flow controller configured to adjust at least one of the flow rate or pressure of the first coolant and at least one of the flow rate or pressure of the second coolant. [Form 19] A system comprising the plenum according to Form 1 and the dielectric window, wherein the third concave region forms a first channel with the dielectric window, and the fourth concave region forms a second channel with the dielectric window. [Form 20] A system according to Form 19, further comprising a temperature sensor for detecting the temperature of the dielectric window or the temperature of the plenum, and a controller configured to adjust at least one of the flow rate of the first coolant or the flow rate of the second coolant based on the output of the temperature sensor. [Form 21] A plenum for a transformer-coupled plasma window, the plenum comprising a first inlet port, a second inlet port, a backup port, and a body, wherein the body comprises a circular concave region configured to hold a first coil, a first channel configured to hold a second coil, and a second channel provided on the opposite side of the circular concave region and the first channel of the body, facing a first region of the dielectric window, receiving the first coolant from the first inlet port, and configured to guide the first coolant across the first region to cool a first portion of the dielectric window. A third channel that is on the opposite side of the circular concave region of the main body and the first channel, is disposed radially inward of the second channel, faces a second region of the dielectric window, receives a second coolant from the second inlet port, guides the second coolant across the second region, and is configured to cool a second portion of the dielectric window. A plenum including: a fourth channel that is on the opposite side of the circular concave region of the main body and the first channel, is disposed radially inward of the third channel, faces a third region of the dielectric window, receives a third coolant from the backup port, guides the third coolant across the third region, and is configured to cool a third portion of the dielectric window. [Embodiment 22] The plenum according to Embodiment 21, wherein the third channel is deeper than the fourth channel and guides the second coolant to the fourth channel.

Claims

1. A plenum for a dielectric window of a substrate processing system, comprising: a first inlet port; a second inlet port; and a body, wherein the body includes: a first concave region configured to hold a first coil; a second concave region configured to hold a second coil; a third concave region facing a first region of the dielectric window, receiving a first coolant from the first inlet port, and configured to guide the first coolant across the first region to cool a first portion of the dielectric window; a fourth concave region facing a second region of the dielectric window, receiving a second coolant from the second inlet port, and configured to guide the second coolant across the second region to cool a second portion of the dielectric window; and a backup passage for cooling a fifth concave region, wherein the body faces a third region of the dielectric window, receives the first coolant from the third concave region, and includes the backup passage configured to guide the first coolant across the third region to cool a third portion of the dielectric window.

2. The plenum according to claim 1, wherein the backup passage is disposed in the fifth concave region and receives a third coolant.

3. The plenum according to claim 2, wherein the third coolant is compressed dry air.

4. The plenum according to claim 1, wherein the third concave region is circular and guides the first coolant toward an output disposed at the center of the plenum; and the fourth concave region is circular and guides the second coolant along a periphery of the plenum to an output.

5. The plenum according to claim 1, wherein the first concave region and the second concave region are on an upper surface side of the plenum; and the third concave region and the fourth concave region are on a bottom surface side of the plenum.

6. The plenum according to claim 1, wherein the second concave region, the third concave region, and the fourth concave region are each a channel.

7. The plenum according to claim 1, wherein the body is circular.

8. The plenum according to claim 1, wherein the body is formed in a shape and size that conforms to the outer peripheral edge of the dielectric window.

9. The plenum according to claim 1, wherein the third concave region includes a guide that extends radially and guides the first coolant from the first inlet port to an output disposed centrally.

10. The plenum according to claim 1, wherein the third concave region includes a guide that extends annularly and guides the first coolant in an annular direction.

11. The plenum according to claim 10, wherein the third concave region includes at least one of a divider or a radially extending guide, and the at least one of the annularly extending guide and the divider or the radially extending guide guides the first coolant from the first inlet port to an output disposed centrally.

12. A system including the plenum according to claim 1, the system including at least one coolant supply source that supplies the first coolant to the first inlet port and supplies the second coolant to the second inlet port.

13. The system according to claim 12, wherein the first coolant is different from the second coolant.

14. The system according to claim 12, wherein the first coolant is different from the second coolant in at least one of flow rate or pressure.

15. The system according to claim 12, wherein the first coolant is compressed dry air and the second coolant is atmospheric pressure air.

16. A system including the plenum according to claim 1, wherein the dielectric window, and at least one of a valve or a mass flow controller configured to adjust at least one of the flow rate or pressure of the first coolant and at least one of the flow rate or pressure of the second coolant.

17. A system including the plenum according to claim 1 and the dielectric window, wherein the third concave region forms a first channel with the dielectric window, and the fourth concave region forms a second channel with the dielectric window.

18. The system according to claim 17, wherein a temperature sensor that detects the temperature of the dielectric window or the temperature of the plenum, A system further comprising a controller configured to adjust at least one of the flow rate of the first coolant or the flow rate of the second coolant based on the output of the temperature sensor.

19. A plenum for a dielectric window, comprising: a first inlet port; a second inlet port; a backup port; and a body, wherein the body includes: a circular concave region configured to hold a first coil; a first channel configured to hold a second coil; a second channel provided on the opposite side of the circular concave region of the body and the first channel, facing a first region of the dielectric window, receiving a first coolant from the first inlet port, guiding the first coolant across the first region, and configured to cool a first portion of the dielectric window; a third channel provided on the opposite side of the circular concave region of the body and the first channel and radially inside the second channel, facing a second region of the dielectric window, receiving a second coolant from the second inlet port, guiding the second coolant across the second region, and configured to cool a second portion of the dielectric window; a fourth channel provided on the opposite side of the circular concave region of the body and the first channel and radially inside the third channel, facing a third region of the dielectric window, receiving a third coolant from the backup port, guiding the third coolant across the third region, and configured to cool a third portion of the dielectric window.

20. The plenum according to claim 19, wherein the third channel is deeper than the fourth channel and guides the second coolant to the fourth channel.

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