High-temperature substrate support with a heat spreader

Abstract

A base plate for a substrate support includes a heater layer configured to selectively heat the base plate and a heat spreader disposed between the heater layer and an upper surface of the base plate. The heat spreader is configured to distribute heat provided by the heater layer throughout the base plate. The base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material having a second CTE and a second thermal conductivity greater than the first thermal conductivity.

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims the benefit of priority of U.S. Provisional Patent Application No. 62 / 978,119, filed on Feb. 18, 2020. The entire disclosure of the above - mentioned related application is incorporated herein by reference.

[0002] This disclosure relates to maintaining temperature uniformity in a substrate support of a substrate processing system.

Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the content of the present disclosure. The research by the inventors named at the present time, within the scope described in this background art section, cannot be regarded as prior art at the time of filing, whether explicitly or implicitly, in the same way as aspects of the description that cannot be regarded as prior art against the present disclosure.

[0004] A substrate processing system may be used to process substrates such as semiconductor wafers. Examples of substrate processing include etching, deposition, photoresist removal, etc. During processing, the substrate is placed on a substrate support such as a pedestal or an electrostatic chuck that includes a surface configured to support the substrate. One or more process gases may be introduced into the processing chamber.

[0005] One or more process gases may be supplied to the processing chamber by a gas supply system. In some systems, the gas supply system includes a manifold connected to a showerhead located within the process chamber by one or more conduits. In some examples, deposition processes such as chemical vapor deposition (CVD), plasma - enhanced CVD (PECVD), atomic layer deposition (ALD), etc. are used to deposit materials on the substrate.

Summary of the Invention

[0006] The base plate for the substrate support includes a heater layer configured to selectively heat the base plate, and a heat spreader disposed between the heater layer and the upper surface of the base plate. The heat spreader is configured to disperse the heat provided by the heater layer throughout the base plate. The base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material having a second CTE and a second thermal conductivity greater than the first thermal conductivity.

[0007] In other features, the heater layer includes a resistive heating element. The first material is a dielectric. The first material is a ceramic. The first material includes at least one of aluminum nitride (AlN), aluminum oxynitride (AlON), and aluminum oxide (Al2O3). The second material includes carbon. The second material includes one of pyrolytic graphite, molybdenum-graphite, and diamond. The second CTE is the same as the first CTE. The second CTE is different from the first CTE. The second CTE is greater than the first CTE. The second thermal conductivity is greater than the first thermal conductivity in at least one direction. The second thermal conductivity is greater than the first thermal conductivity at least in the x-y plane.

[0008] In other features, the heat spreader includes an inner layer having a second CTE and an outer layer including a third material having a third CTE between the first CTE and the second CTE. The third material includes molybdenum (Mo). The heat spreader includes an intermediate layer disposed between the inner layer and the outer layer. The intermediate layer is made of metal. The intermediate layer includes copper.

[0009] In other features, the base plate further includes a plurality of interface layers disposed at least between the heat spreader and the upper surface of the base plate and between the heat spreader and the heater layer. The plurality of interface layers include a third material having a third CTE between a first CTE and a second CTE. Each individual layer among the plurality of interface layers alternates with a layer of the first material. The base plate further includes a functionally graded material (FGM). The FGM includes the first material and a third material having a third CTE. The FGM is a functionally graded ceramic (FGC). The base plate further includes a cap layer disposed on the heat spreader. The cap layer includes the first material.

[0010] In other features, the substrate support includes a base plate and further includes a skirt ring assembly surrounding the base plate. The heat spreader is isotropic. The heat spreader has at least one of anisotropic thermal conductivity and anisotropic CTE.

[0011] The substrate support for a substrate processing system includes a base plate including a functionally graded material (FGM). The FGM includes a dielectric material and a graded filler material. The heat spreader is embedded within the base plate. The heat spreader is configured to disperse heat throughout the base plate, and the heat spreader has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The FGM has a second CTE and a second thermal conductivity.

[0012] In other features, the first CTE is the same as the second CTE. The first CTE is different from the second CTE. The FGM is a functionally graded ceramic (FGC). The FGC is a ceramic matrix composite (CMC) material. The second CTE of the FGM varies in the vertical direction.

[0013] A substrate support for a substrate processing system includes a base plate. The base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity. A heater layer is embedded within the base plate, and a heat spreader is disposed on the base plate. The heat spreader is configured to spread the heat generated by the heater layer laterally. The heat spreader includes a second material having a second CTE and a second thermal conductivity greater than the first thermal conductivity. A cap layer is disposed on the heat spreader.

[0014] In other features, the cap layer includes the first material. The cap layer includes the second material. The cap layer includes a third material. A skirt ring assembly surrounds the base plate. The first CTE is the same as the second CTE. The first CTE is different from the second CTE.

[0015] Further areas applicable to the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and the specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0016] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0017]

Figure 1

[0018]

Figure 2

[0019]

Figure 3

[0020]

Figure 4

[0021]

Figure 5

[0022]

Figure 6A

Figure 6B

[0023] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

DETAILED DESCRIPTION OF THE INVENTION

[0024] In film deposition processes such as atomic layer deposition (ALD), various properties of the deposited film vary across a spatial (i.e., x-y coordinates in the horizontal plane) distribution. For example, a substrate processing tool may have respective specifications for film thickness non-uniformity (NU). The film thickness NU may be measured as the full range, half range, standard deviation, etc. of a set of measurements taken at a given location on the surface of a semiconductor substrate. In some examples, NU may be reduced by addressing the direct cause of the NU. In other examples, NU may be reduced by introducing a counteracting NU to compensate for and cancel out the existing NU. In other examples, materials may be intentionally deposited and / or removed non-uniformly to compensate for known non-uniformities in other (e.g., previous or subsequent) steps in the process.

[0025] The deposition rate may depend, in part, on the substrate temperature. Thus, the temperature NU (i.e., the difference in temperature across the substrate) can result in different deposition rates and corresponding film thickness NUs. The substrate processing system may implement various temperature control schemes to control the temperature of the substrate in order to minimize NU. For example, the substrate support (i.e., a structure having a generally flat upper surface configured to support the substrate during processing, such as a pedestal) may include a heater layer. The heater layer may include one or more zones that are each controlled to maintain the desired temperature of the substrate support and, accordingly, the substrate.

[0026] In some examples, the heater layer includes a resistive heater or a heater. Generally, the heater layer is embedded within a substrate support (e.g., a pedestal) composed of a dielectric material having a high thermal conductivity, such as ceramics (e.g., aluminum nitride (AlN)). Some ceramic materials containing AlN have a reduced thermal conductivity at higher temperatures (e.g., above 500 degrees Celsius). The difference in thermal conductivity across the substrate support can result in an asymmetric thermal NU that affects deposition. More specifically, the heat provided by the heater layer may not be sufficiently dispersed across the substrate support to provide temperature uniformity. Additionally, materials such as AlN may limit the temperatures and chemicals that can be used in some processes (e.g., cleaning processes).

[0027] Systems and methods according to the principles of the present disclosure implement a heat spreader (e.g., a layer composed of or encapsulated with a thermally conductive material) adhered to and / or embedded within a substrate support. The heat spreader is configured to evenly (e.g., horizontally) disperse heat from a heater layer across the substrate support. The heat spreader has a higher thermal conductivity than the material of the substrate support (e.g., the base plate of the substrate support), such as AlN. The heat spreader may be composed of materials including, but not limited to, pyrolytic graphite bonded to or embedded within / included in AlN, molybdenum-graphite bonded to or embedded within / included in AlN, diamond (e.g., CVD diamond), etc. In some examples, the substrate support is composed of materials other than AlN, including, but not limited to, aluminum oxynitride (AlON), Al2O3, mixtures thereof, etc. The material may include secondary stabilizers such as TiO x , Y2O x , La2O x and the like.

[0028] The heat spreader may be a continuous heat spreader layer. The heat spreader may have a specific shape or geometry to provide a desired temperature distribution pattern. For example, the heat spreader may include one or more rings, azimuthal rings, columnar structures, etc. In some examples, the heat spreader may include a layer such as a plate that is mechanically attached to an adjacent layer of the substrate support. In other examples, the heat spreader may include a powder or other material (e.g., indium) that is embedded or otherwise used to fill a cavity or channel within the substrate support after manufacturing.

[0029] Referring now to FIG. 1, an example of a substrate processing system 100 including a substrate support (e.g., an ALD pedestal) 104 according to the present disclosure is shown. The substrate support 104 is disposed within a processing chamber 108. A substrate 112 is disposed on the substrate support 104 during processing.

[0030] The gas supply system 120 includes gas sources 122-1, 122-2, ···, and 122-N (collectively referred to as gas source 122) connected to valves 124-1, 124-2, ···, and 124-N (collectively referred to as valve 124), and mass flow controllers 126-1, 126-2, ···, and 126-N (collectively referred to as MFCs 126). The MFCs 126 control the flow of gas from the gas source 122 to the manifold 128 where the gases are mixed. The output of the manifold 128 is supplied to a gas distribution device such as a multi-injector showerhead 140 via an optional pressure regulator 132.

[0031] The temperature of the substrate support 104 may be controlled using a heater layer such as a resistive heater 144. The substrate support 104 according to the principles of the present disclosure includes a heat spreader 148, as will be described in more detail later. The substrate support 104 may include a coolant channel 164. The cooling fluid is supplied from the fluid reservoir 168 and the pump 170 to the coolant channel 164. A pressure sensor 172 may be disposed in the manifold 128 to measure the pressure. Reactants may be discharged from the processing chamber 108 using the valve 178 and the pump 180. The pressure within the processing chamber 108 may be controlled using the valve 178 and the pump 180.

[0032] The controller 182 includes a dosing control device 184 that controls the dosing provided by the multi-injector showerhead 140. Further, the controller 182 controls the supply of gas from the gas supply system 120. The controller 182 controls the pressure within the processing chamber and / or the discharge of reactants using the valve 178 and the pump 180. The controller 182 controls the temperature of the substrate support 104 and the substrate 112 based on temperature feedback. For example, the temperature feedback may correspond to feedback from a sensor (not shown) within the substrate support, a sensor (not shown) that measures the coolant temperature, etc.

[0033] In some examples, the substrate processing system 100 may be configured to perform etching on the substrate 112 within the same processing chamber 108. For example, the substrate processing system 100 may be configured to perform both a trim step and a spacer deposition step according to the present disclosure, as described in more detail below. Thus, the substrate processing system 100 may include an RF generation system 188 configured to generate RF power (e.g., as a voltage source, a current source, etc.) and provide it to a lower electrode (e.g., the base plate of the substrate support 104 as shown) and an upper electrode (e.g., the showerhead 140). For illustrative purposes, the output of the RF generation system 188 is described herein as an RF voltage. The lower electrode and the upper electrode may be DC grounded, AC grounded, or floating. For example, the RF generation system 188 may include an RF generator 192 configured to generate an RF voltage, and the RF voltage is supplied by a matching and distribution network 196 that generates plasma within the processing chamber 108 to etch the substrate 112. In other examples, the plasma may be generated inductively or remotely. As shown for illustrative purposes, the RF generation system 188 corresponds to a capacitively coupled plasma (CCP) system, but the principles of the present disclosure are applicable to other suitable systems. For example, the principles of the present disclosure may be implemented in a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and supply system, etc.

[0034] Referring now to FIG. 2, an exemplary substrate support 200 according to the present disclosure includes a base plate 204 having a heater layer 208 and an embedded heat spreader 212. For example, the base plate 204 is composed of a dielectric material including, but not limited to, AlN or Al2O3. In some examples, the base plate 204 may include boron nitride. In some examples, the base plate 204 is coated with fluorine (F) and an oxygen-resistant material (e.g., zirconia (ZrO2)). The heat spreader 212 includes an inner (e.g., encapsulated) layer 216 including a heat-conductive material (e.g., carbon such as pyrolytic graphite, diamond, or molybdenum-graphite, boron nitride (h-BN or BN), etc.). For example, the heat spreader 212 may have a thermal conductivity between 100 and 1500 watts per meter kelvin (W / m-k) at a temperature between 500 and 700 degrees Celsius. The inner layer 216 is configured to laterally (i.e., horizontally) disperse the heat generated in the heater layer 208 throughout the base plate 204. For example, the inner layer 216 has a higher thermal conductivity than the material of the base plate 204.

[0035] The material of the inner layer 216 may have various physical and / or chemical incompatibilities with the material of the base plate 204. For example, the inner layer 216 and the base plate 204 may have different coefficients of thermal expansion (CTEs). In some examples, the inner layer 216 and the base plate may have the same CTE. Thus, the inner layer 216 may be encapsulated with one or more additional layers to provide a stable physical interface between the inner layer 216 and the base plate 204. For example, the heat spreader 212 may include an intermediate layer 220 composed of a metallic material such as copper (Cu) surrounding the inner layer 216. The outer layer 224 surrounds the intermediate layer 220. As an example, the outer layer 224 is composed of molybdenum (Mo).

[0036] The outer layer 224 may have a CTE closer to that of the base plate 204 than the inner layer 216. Thus, the inner layer 216 may have the same incompatibility as the outer layer 224. The intermediate layer 220 provides an interface between the inner layer 216 and the outer layer 224. In one example, the inner layer 216 may have a first CTE that is greater than (or less than) a second CTE of the base plate 204. The intermediate layer 220 and / or the outer layer 224 may (individually or in combination) have a third CTE that is between the first CTE and the second CTE. In this way, the heat spreader 212 provides a transition of the CTEs of the respective materials of the inner layer 216, the intermediate layer 220, and the outer layer 224 to more closely match the CTE of the base plate 204. Other suitable materials may be substituted for the inner layer 216, the intermediate layer 220, and / or the outer layer 224. The materials may include composite materials, materials having graded chemistry and / or graded fillers, and alloys such as low CTE iron and nickel alloys.

[0037] In some examples, the heat spreader 212 has isotropic properties. In other examples, the heat spreader 212 has anisotropic properties such as anisotropic thermal conductivity and / or anisotropic CTE. For example, the heat spreader 212 may have a greater thermal conductivity in the horizontal direction than in the vertical direction to improve the temperature uniformity of the substrate support 200 in the horizontal direction. In other examples, the heat spreader 212 may have a greater thermal conductivity in the vertical direction than in the horizontal direction to maximize the heat distribution from the heater layer 208 to the upper surface of the base plate 204 while restricting the heat distribution between different radial or azimuthal zones of the base plate 204. In yet other examples, the heat spreader 212 may have a greater CTE in the vertical or horizontal direction.

[0038] In some examples, the heat spreader may be implemented as one or more materials that provide a CTE gradient to provide a uniform temperature distribution for high-temperature processes. The materials also provide CTE matching to minimize debonding and delamination between the heat spreader layer and the surrounding materials. For example, the heat spreader layer and / or the surrounding materials may be implemented as a ceramic matrix composite (CMC) including fillers (e.g., spinel), functionally graded materials (FGM), etc. FIG. 3 shows a portion of another exemplary substrate support 300. The substrate support 300 includes a base plate 304 having a heater layer 308 and an embedded heat spreader 312. For example, the base plate 304 is composed of a dielectric material including, but not limited to, AlN or Al2O3. In this example, the base plate 304 includes one or more interface layers 316 that provide a transition interface between the heat spreader 312 and the material of the base plate 304.

[0039] For example, the heat spreader 312 may have a first CTE that is greater than (or less than) a second CTE of the material of the base plate 304. Conversely, the material of the interface layer 316 may have a third CTE that is between the first CTE and the second CTE. The material of the base plate 304 may be arranged in layers between the interface layers 316 and between the interface layer 316 and the heat spreader 312.

[0040] Referring now to FIG. 4, a portion of another exemplary substrate support 400 includes a base plate 404 that includes a functionally graded material (FGM) such as a functionally graded ceramic (FGC). The base plate includes a heater layer 408 and an embedded heat spreader 412. For example, the base plate 404 implements the FGC as a CMC that includes a dielectric material (e.g., a ceramic such as AlN or Al2O3) 416 and a gradient filler 420 (e.g., hexagonal boron nitride (h-BN)). As an example, the dielectric material 416 and / or the filler 420 may be formed using powder metallurgy sheet lamination, CVD, sintering, and / or other manufacturing or coating processes. FGMs have one or more physical properties (e.g., CTE) that vary according to dimension (e.g., vertical distance). The physical property may vary based on a change in one or more properties of the filler 420 including, but not limited to, fraction (amount relative to the dielectric material 416), shape, orientation, particle size, etc.

[0041] For example, the heat spreader 412 may have a first CTE that is greater (or less) than a second CTE dielectric material 416 of the base plate 404. The filler 420 has a third CTE that is between the first CTE and the second CTE. Thus, the change in the properties of the filler 420 relative to the dielectric material 416 changes the overall CTE of the base plate 404 in a given vertical region or zone. That is, the overall CTE of the base plate 404 may be closer to the first CTE of the heat spreader 412 in the region adjacent to the heat spreader 412. Conversely, as the distance from the heat spreader 412 increases, the CTE of the base plate 404 decreases (or increases). The gradient of the CTE of the base plate 404 may be linear, exponential, stepped, etc. In this way, the gradient filler 420 provides CTE matching and reduces the thermal stress caused by the CTE mismatch between the heat spreader 412 and the dielectric material 416.

[0042] Referring now to FIG. 5, another exemplary substrate support 500 includes a baseplate 504 having an embedded heater layer 508. A heat spreader 512 is disposed on the baseplate 504. A cap layer 516 is disposed on the heat spreader 512. The cap layer 516 may have a thickness between 1.0 and 3.0 mm. For example, the baseplate 504 and the cap layer 516 are made of a dielectric material (e.g., ceramics) including, but not limited to, AlN or Al2O3. The baseplate 504 and the cap layer 516 may include the same material or different materials. The heat spreader 512 includes a thermally conductive material (e.g., carbon such as pyrolytic graphite, diamond). It is configured to laterally (i.e., horizontally) disperse the heat generated in the heater layer 508 throughout the cap layer 516. In some examples, the heat spreader 512 is conductive and thus may function as a lower electrode.

[0043] The cap layer 516 may be removable and replaceable. For example, the cap layer 516 may be exposed to the process material while protecting the heat spreader 512 and the baseplate 504 from exposure to the process material. Thus, the cap layer 516 may be a consumable part that is periodically replaced. The heat spreader 512 may also be replaceable. The cap layer 516 and the heat spreader 512 may be configured based on desired performance characteristics. For example, different ones of the cap layer 516 and / or the heat spreader 512 may be selectively installed based on the desired CTE value for a particular process, substrate type, etc. In some examples, the baseplate 504, the heat spreader 508, and / or the cap layer 516 may be aligned using respective pairs of slots 520 and alignment features 524. For example, the slots 520 may be provided on the respective lower surfaces of the cap layer 516 and / or the heat spreader 512. Conversely, the alignment features 524 may extend upwardly from the respective upper surfaces of the heat spreader 512 and the baseplate 504.

[0044] The heat spreader 512 is not fixedly attached (e.g., bonded with an adhesive) to the base plate 504 and the cap layer 516. Thus, due to the differences in the respective CTEs of the heat spreader 512, the base plate 504, and the cap layer 516, thermal stress is generated, and accordingly, no mechanical failure of the substrate support 500 occurs.

[0045] The skirt ring assembly 528 may surround the substrate support 500. The skirt ring assembly 528 protects the surfaces of the base plate 504 and the heat spreader 512 from erosion caused by process materials, reduces parasitic plasma, and reduces plasma ignition, etc. In some examples, purge gas may be provided below the base plate 504 and / or above the volume through the stem 532 and within the gap between the skirt ring assembly 528 and the substrate support 500. The purge gas prevents process materials from leaking from the process volume into the gap. Thus, the surfaces of the base plate 504 and the heat spreader 512 are further protected from process materials and parasitic plasma. Further, plasma ignition within the gap and on the back surface of the base plate 504 is reduced.

[0046] In some examples, the heat spreader may be a continuous heat spreader layer. The heat spreader may have a specific shape or geometry to provide a desired temperature distribution pattern. As shown in FIGS. 6A and 6B, an exemplary heat spreader 600 may include one or more rings 604. The rings 604 may be composed of the same material or different materials. For example, the rings 604 may each be composed of a material having desired CTEs for a specific zone of the substrate support. As shown in FIG. 6B, the heat spreader 600 further includes radial spokes 608 connecting to the rings 604. Thus, the heat spreader 600 may be configured to compensate for zone-based (e.g., radial or azimuthal) NU.

[0047] The foregoing description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or its use. The broad teachings of the disclosure can be implemented in a variety of forms. Accordingly, while this disclosure includes specific examples, it will be apparent to one of ordinary skill in the art, upon consideration of the drawings, the specification, and the following claims, that other changes are possible. It should be understood that one or more steps within a method may be executed in a different order (or concurrently) without altering the principles of the disclosure. Further, each of the embodiments described above is presented as having certain features, but any one or more of these features described with respect to any embodiment of the disclosure may be implemented in, and / or combined with, any other embodiment, even if such combination is not explicitly described. That is, the described embodiments are not mutually exclusive, and swapping one or more embodiments with each other remains within the scope of the disclosure.

[0048] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." In the above disclosure, when the relationship between a first element and a second element is described, unless explicitly stated to be "direct," the relationship can be not only a direct relationship with no other intervening elements between the first and second elements, but also an indirect relationship with one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the expression "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0049] In some embodiments, the controller may be part of the system and part of the examples described above. Such a system may comprise a semiconductor processing apparatus including one or more processing tools, one or more chambers, one or more processing platforms, and / or certain processing components (such as wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the system operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may sometimes be referred to as a "controller" and may control various components or sub-parts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system. Such processes include supply of processing gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position and motion setting, loading and unloading of wafers to and from tools, and loading and unloading of wafers to and from other transfer tools and / or load locks connected or interfaced to a particular system.

[0050] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logics, memories, and / or software that receive commands, issue commands, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits may include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions are commands communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for executing a particular process on or for a semiconductor wafer or for a system. The operating parameters may, in some embodiments, be part of a recipe defined by a process engineer and may achieve one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0051] In some embodiments, the controller may be integrated with, coupled to, or, if not, network-connected to the system, or may be part of or coupled to a computer that is a combination thereof. For example, the controller may be within the "cloud" or may be all or part of a fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system, monitor the current progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or performance criteria from multiple manufacturing operations, change the parameters of the current process, set the processing steps following the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, and such parameters and / or settings are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data specifies parameters for each of the processing steps to be executed during one or more operations. It should be understood that the parameters may be specific to the type of process being executed and the type of tool that the controller is configured to interact with or control. Thus, as described above, the controller may be distributed, such as by including one or more individual controllers that are network-connected to each other and cooperate towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (such as at the platform level or as part of a remote computer) and are coupled to control the process on the chamber.

[0052] Exemplary systems may include, but are not limited to, a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be related to or used in the fabrication and / or manufacture of semiconductor wafers.

[0053] As described above, depending on one or more process steps performed by a tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, proximate tools, tools located throughout the factory, a main computer, another controller, or a tool used for material transfer to and from a tool location and / or load port within a semiconductor manufacturing facility for wafers in a container. The present disclosure may be implemented in the following forms. [Form 1] A base plate for a substrate support, a heater layer configured to selectively heat the base plate, a heat spreader disposed between the heater layer and the upper surface of the base plate, the heat spreader being configured to disperse the heat provided by the heater layer throughout the base plate and comprising the base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity, the heat spreader includes a second material having a second CTE different from the first CTE and a second thermal conductivity greater than the first thermal conductivity, the base plate. [Form 2] The base plate according to Form 1, wherein the heater layer includes a resistive heating element, the base plate. [Form 3] The base plate according to Form 1, wherein the first material is a dielectric, the base plate. [Form 4] The base plate according to Form 1, wherein the second material includes at least one of carbon, pyrolytic graphite, molybdenum-graphite, and diamond, the base plate. [Form 5] The base plate according to Form 1, wherein the second CTE is different from the first CTE, the base plate. [Form 6] The base plate according to Form 1, wherein the second CTE is greater than the first CTE, the base plate. [Form 7] The base plate according to Form 1, wherein the heat spreader includes an inner layer having the second CTE and an outer layer including a third material having a third CTE between the first CTE and the second CTE, the base plate. [Form 8] The base plate according to Form 7, wherein the heat spreader includes an intermediate layer disposed between the inner layer and the outer layer, the base plate. [Form 9] The base plate according to Form 1, further comprising a plurality of interface layers disposed at least one of (i) between the heat spreader and the upper surface of the base plate and (ii) between the heat spreader and the heater layer, the base plate. [Form 10] The base plate according to Form 9, The base plate, wherein the plurality of interface layers includes a third material having a third CTE between the first CTE and the second CTE. [Embodiment 11] The base plate according to Embodiment 9, wherein Individual layers of the plurality of interface layers are alternating with layers of the first material. [Embodiment 12] The base plate according to Embodiment 1, wherein The heat spreader is isotropic. [Embodiment 13] The base plate according to Embodiment 1, wherein The heat spreader has at least one of anisotropic thermal conductivity and anisotropic CTE. [Embodiment 14] The base plate according to Embodiment 1, wherein The base plate further includes a functionally graded material (FGM). [Embodiment 15] A substrate support for a substrate processing system, comprising A base plate including a functionally graded material (FGM), the FGM including a dielectric material and a graded filler material, and A heat spreader embedded in the base plate, configured to disperse heat throughout the base plate and having a first coefficient of thermal expansion (CTE) and a first thermal conductivity, Comprising The FGM has a second CTE and a second thermal conductivity. [Embodiment 16] The substrate support according to Embodiment 15, wherein The FGM is a functionally graded ceramic (FGC). [Embodiment 17] The substrate support according to Embodiment 16, wherein The FGC is a ceramic matrix composite (CMC) material. [Embodiment 18] The substrate support according to Embodiment 15, wherein The second CTE of the FGM varies in the vertical direction. [Embodiment 19] The substrate support according to Embodiment 16, wherein The first CTE is different from the second CTE. [Embodiment 20] A substrate support for a substrate processing system, comprising A base plate including a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity, A heater layer embedded in the base plate, A heat spreader disposed on the base plate, configured to spread heat generated by the heater layer laterally and including a second material having a second CTE and a second thermal conductivity greater than the first thermal conductivity, A cap layer disposed on the heat spreader A substrate support comprising

Claims

1. A base plate for a substrate support, comprising: a heater layer configured to selectively heat the base plate; a heat spreader disposed between the heater layer and the upper surface of the base plate, the heat spreader being configured to disperse heat provided by the heater layer throughout the base plate; and the base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity; the heat spreader includes a second material having a second CTE different from the first CTE and a second thermal conductivity greater than the first thermal conductivity; the base plate further includes a plurality of interface layers disposed at least one of (i) between the heat spreader and the upper surface of the base plate and (ii) between the heat spreader and the heater layer.

2. The base plate according to claim 1, wherein the heater layer includes a resistive heating element.

3. The base plate according to claim 1, wherein the first material is a dielectric.

4. The base plate according to claim 1, wherein the second material includes at least one of carbon, pyrolytic graphite, molybdenum-graphite, and diamond.

5. The base plate according to claim 1, wherein the second CTE is different from the first CTE.

6. The base plate according to claim 1, wherein the second CTE is greater than the first CTE.

7. A base plate for a substrate support, comprising: a heater layer configured to selectively heat the base plate; a heat spreader disposed between the heater layer and the upper surface of the base plate, the heat spreader being configured to disperse heat provided by the heater layer throughout the base plate; and the base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity; the heat spreader includes a second material having a second CTE different from the first CTE and a second thermal conductivity greater than the first thermal conductivity; The heat spreader includes an inner layer having the second CTE and an outer layer including a third material having a third CTE between the first CTE and the second CTE, and is a base plate.

8. The base plate according to claim 7, wherein the heat spreader includes an intermediate layer disposed between the inner layer and the outer layer, and is a base plate.

9. The base plate according to claim 1, wherein the plurality of interface layers include a third material having a third CTE between the first CTE and the second CTE, and is a base plate.

10. The base plate according to claim 1, wherein each of the plurality of interface layers is alternately arranged with the layer of the first material, and is a base plate.

11. The base plate according to claim 1, wherein the heat spreader is isotropic, and is a base plate.

12. The base plate according to claim 1, wherein the heat spreader has at least one of an anisotropic thermal conductivity and an anisotropic CTE, and is a base plate.

13. A base plate for a substrate support, a heater layer configured to selectively heat the base plate, and a heat spreader disposed between the heater layer and the upper surface of the base plate, the heat spreader being configured to disperse the heat provided by the heater layer throughout the base plate and comprising, the base plate includes a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity, the heat spreader includes a second material having a second CTE different from the first CTE and a second thermal conductivity greater than the first thermal conductivity, the base plate further includes a functionally graded material (FGM), and is a base plate.

14. A substrate support for a substrate processing system, a base plate including a functionally graded material (FGM), the FGM including a dielectric material and a gradient filler material, and a base plate, a heat spreader embedded in the base plate, the heat spreader being configured to disperse heat throughout the base plate and having a first coefficient of thermal expansion (CTE) and a first thermal conductivity, and comprising, the FGM has a second CTE and a second thermal conductivity, and is a substrate support.

15. The substrate support according to claim 14, wherein the FGM is a functionally gradient ceramics (FGC), the substrate support. **Claim 16** The substrate support according to claim 15, wherein the FGC is a ceramic matrix composite (CMC) material, the substrate support. **Claim 17** The substrate support according to claim 14, wherein the second CTE of the FGM varies in the vertical direction, the substrate support. **Claim 18** The substrate support according to claim 15, wherein the first CTE is different from the second CTE, the substrate support. **Claim 19** A substrate support for a substrate processing system, comprising: a base plate including a first material having a first coefficient of thermal expansion (CTE) and a first thermal conductivity; a heater layer embedded in the base plate; a heat spreader disposed on the base plate and configured to spread heat generated by the heater layer laterally, the heat spreader including a second material having a second CTE greater than the first CTE and a second thermal conductivity greater than the first thermal conductivity; a cap layer disposed on the heat spreader and a substrate support.

Images