Method for manufacturing a glass substrate with a film

Abstract

To provide a method for manufacturing a glass substrate having a film, capable of suppressing a variation in film characteristics after film deposition, caused by the deformation of a glass substrate that may be generated by heating during the film deposition.SOLUTION: A method for manufacturing a glass substrate G having a film by subjecting a main surface Ga of the glass substrate G1 to film deposition comprises: holding the glass substrate G1 in a state warped in a curved shape so that the side of one main surface Ga is convex; supplying a film deposition gas Gs (a film deposition material) to the glass substrate G1 from the side of the one main surface Ga while heating the glass substrate G1 from the side of the other main surface Ga; monitoring a warp amount (a real warp amount α) of the glass substrate G1 by a controller 40 (monitor means); and correcting so that a real warp amount αa is a reference warp amount α by warp amount correction means (a pair of movable holding tools 10 and 10) when the real warp amount αa is different from a preset reference warp amount α.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a glass substrate with a film.

Background Art

[0002] Conventionally, a glass substrate with a film has been known in which a transparent conductive film made of an FTO film (fluorine-doped tin oxide film), an ATO film (antimony-doped tin oxide film), an ITO film (indium tin oxide film), or the like is provided on a base glass substrate. In the film formation process of the above-mentioned glass substrate with a film, for example, a thermal CVD method (thermal chemical vapor deposition method) is used. That is, such a glass substrate with a film is produced by performing a film formation process by supplying a film formation material to the main surface of the glass substrate while heating the glass substrate using a heating device such as a heater. Therefore, due to the heating during the film formation process, unexpected deformations such as curvature and waviness are likely to occur in the glass substrate, resulting in non-uniform film thickness after the film formation process and variations in film characteristics.

[0003] On the other hand, the demand for thinning such a glass substrate with a film is increasing year by year. As the base glass substrate becomes thinner (for example, with a thickness of 2 mm or less), the deformation of the glass substrate that can occur due to heating during the film formation process becomes more complex and significant, and thus the film characteristics after the film formation process are more likely to vary.

[0004] Therefore, Patent Document 1 discloses an example of a technique for suppressing the deformation of the glass substrate due to heating during such a film formation process and improving the quality of the glass substrate with a film after the film formation process. That is, in Patent Document 1, a base glass substrate is preliminarily regulated and held in a curved state in which the central portion in the width direction is convex in one direction, and in this state, a film formation process is performed by supplying a film formation gas to the first main surface of the glass substrate while heating the second main surface of the glass substrate. A technique related to a method for manufacturing a glass substrate with a film is disclosed.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] According to the technology in the above Patent Document 1, by applying a uniform stress to the main surface of a glass substrate held in a curved and warped state, it is possible to suppress the complex deformation of the glass substrate that may occur due to heating during the film formation process, effectively prevent variations in film characteristics, and improve the quality of the glass substrate with a film after the film formation process.

[0007] However, depending on the execution time of the film formation process, the thermal history of the glass substrate is different between the first half and the second half of the execution time. In the second half compared to the first half, the temperature of the glass substrate becomes higher, and the amount of warpage of the glass substrate may increase. As a result, from immediately after the execution of the film formation process until just before the end, it becomes difficult to keep the distance between the ejection port of the nozzle for supplying the film formation material and the main surface of the glass substrate constant. Therefore, still, the film thickness after the film formation process becomes non-uniform, which may be a factor causing variations in film characteristics.

[0008] The present invention has been made in view of the above-described current problems, and an object thereof is to provide a method for manufacturing a glass substrate with a film that can suppress variations in film characteristics after film formation, which are caused by deformation of the glass substrate that may occur due to heating during the film formation process.

Means for Solving the Problems

[0009] The problems to be solved by the present invention are as described above. Next, means for solving these problems will be described.

[0010] That is, the method for manufacturing a glass substrate with a film according to the present invention is a method for manufacturing a glass substrate with a film by performing a film-forming process on the main surface of the glass substrate. In this method, the glass substrate is held in a curved and warped state such that one main surface side is convex, and while heating the glass substrate from the other main surface side, a film-forming material is supplied to the glass substrate from the one main surface side. The method for manufacturing a glass substrate with a film is characterized in that a warpage amount of the glass substrate is monitored by monitoring means, and when the warpage amount is different from a preset reference warpage amount, the warpage amount is corrected to the reference warpage amount by warpage amount correction means. By having such a configuration, according to the method for manufacturing a glass substrate with a film according to the present invention, by constantly monitoring with the monitoring means, it is possible to always maintain the warpage amount of the base glass substrate at a preset reference warpage amount, and it is possible to suppress variations in film characteristics after the film-forming process caused by deformation of the glass substrate that may occur due to heating during the film-forming process.

[0011] Further, in the method for manufacturing a glass substrate with a film according to the present invention, the warpage amount correction means preferably comprises a pair of movable holding jigs that hold both side edge portions in the width direction of the glass substrate. The pair of movable holding jigs are arranged to face each other and the warpage amount of the glass substrate is corrected by moving them in the approaching direction and the separating direction. By having such a configuration, according to the method for manufacturing a glass substrate with a film according to the present invention, there is no need to newly provide a mechanism for correcting the warpage amount of the glass substrate to the reference warpage amount separately. Compared with conventional equipment, an increase in equipment cost can be suppressed, and it is economical.

[0012] Further, in the method for manufacturing a glass substrate with a film according to the present invention, the warpage amount correction means may comprise a heating device that heats the glass substrate from the other main surface side. The heating device is characterized in that the warpage amount of the glass substrate is corrected by adjusting the amount of heat supplied to the glass substrate. Even in the manufacturing method of the glass substrate with a film according to the present invention having such a configuration, there is no need to newly provide a mechanism for correcting the warp amount of the glass substrate so as to be a reference warp amount, and an increase in equipment cost can be suppressed compared with the conventional equipment, which is economical.

[0013] Further, in the manufacturing method of the glass substrate with a film according to the present invention, it is preferable that the monitoring means includes a warp amount detection means for detecting the warp amount from a side other than at least the one main surface side with respect to the glass substrate. By having such a configuration, according to the manufacturing method of the glass substrate with a film according to the present invention, by providing a warp amount detection means at a position avoiding the film-forming gas before and after the reaction rising from one main surface of the glass substrate as the film-forming process is executed, it is possible to reduce the warp amount detection error caused by the gas and to prevent the reduction of the service life of the warp amount detection means as much as possible.

[0014] Further, in the manufacturing method of the glass substrate with a film according to the present invention, the warp amount detection means may be composed of a transmission type laser displacement sensor having a pair of light emitters and light receivers, and the pair of light emitters and light receivers may be respectively arranged on both sides in the width direction of the glass substrate with respect to the glass substrate. By having such a configuration, according to the manufacturing method of the glass substrate with a film according to the present invention, since the warp amount of the glass substrate can be detected without directly touching the glass substrate, the quality of the produced glass substrate with a film can be improved without accidentally damaging the glass substrate.

[0015] Further, in the manufacturing method of the glass substrate with a film according to the present invention, the warp amount detection means may be composed of a reflection type laser displacement sensor, and the warp amount detection means may be arranged on the other main surface side with respect to the glass substrate. By having such a configuration, according to the method for manufacturing a glass substrate with a film according to the present invention, it is possible to improve the quality of the produced glass substrate with a film without accidentally damaging the glass substrate, and also to reduce the number of components, wiring, etc., which is economical.

[0016] Further, in the method for manufacturing a glass substrate with a film according to the present invention, the warpage amount detection means may be composed of a contact displacement sensor, and the warpage amount detection means may be arranged on the other main surface side with respect to the glass substrate. By having such a configuration, according to the method for manufacturing a glass substrate with a film according to the present invention, in order to detect the warpage amount of the glass substrate by directly abutting a contact displacement sensor on the other main surface avoiding the one main surface on which the film formation process is performed, the warpage amount of the glass substrate can be detected more accurately.

[0017] And, in the method for manufacturing a glass substrate with a film according to the present invention, the film formation process performed on the main surface of the glass substrate is characterized by being carried out by the thermal CVD method. Thus, the method for manufacturing a glass substrate with a film according to the present invention is a manufacturing method such as the thermal CVD method which is a film formation process involving heating, in which unexpected deformations such as curvature and undulation are likely to occur in the base glass substrate, resulting in non-uniform film thickness after the film formation process and variations in film characteristics. Against such a manufacturing method, it is possible to more effectively suppress the variations in film characteristics after the film formation process.

Effects of the Invention

[0018] As effects of the present invention, the following effects are achieved. That is, according to the method for manufacturing a glass substrate with a film according to the present invention, it is possible to suppress variations in film characteristics after the film formation process caused by deformation of the glass substrate that may occur due to heating during the film formation process.

Brief Description of the Drawings

[0019]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0020] Next, embodiments of the present invention will be described with reference to FIGS. 1 to 7. For the following description, for convenience, the direction of arrow A shown in FIGS. 1 and 2(b) is defined as the conveyance direction of glass substrate G1 for explanation. Also, in FIGS. 1 to 3, and FIGS. 5 to 7, it is assumed that the conveyance direction of glass substrate G1 indicated by arrow A is the front, and the vertical direction, front-rear direction, and left-right direction of the manufacturing apparatus 1 (101, 201, 301) of the glass substrate G with a film or the heating apparatus 30 are defined and described by the direction of each arrow.

[0021] [Manufacturing Apparatus 1 of Glass Substrate with Film (First Embodiment)] First, the overall configuration of the manufacturing apparatus 1 (hereinafter simply referred to as the "manufacturing apparatus") of the glass substrate G with a film in the first embodiment for implementing the manufacturing method of the glass substrate G with a film according to the present invention will be described with reference to FIGS. 1 to 3.

[0022] The manufacturing apparatus 1 in the present embodiment is an apparatus that performs a film-forming process using the thermal CVD method on the main surface Ga of the base glass substrate G1 to form a transparent conductive film G2 such as an FTO film, an ATO film, or an ITO film, and manufactures a glass substrate G with a film (see FIG. 3(b)).

[0023] Here, the glass substrate G1 handled in the present embodiment is, for example, a thin glass substrate having a thickness dimension of about 0.05 to 2 mm and an outer dimension of about 50 mm to 500 mm in the length direction (longitudinal direction) and the width direction (direction orthogonal to the longitudinal direction), and is a glass substrate that is likely to cause unexpected deformation such as curvature or undulation due to heating during the film-forming process. Note that from the viewpoint of suppressing the deformation of the glass substrate G1 after the film-forming process as much as possible, the strain point of the glass substrate G1 is preferably higher than the heating temperature described later.

[0024] As shown in FIG. 1, the manufacturing apparatus 1 mainly includes a movable holding jig 10, a film-forming nozzle 20, a heating apparatus 30, a control apparatus 40 that controls the operation of the entire manufacturing apparatus 1, and the like. Further, the manufacturing apparatus 1 includes a conveyance device (not shown) such as a conveyance conveyor. The conveyance device conveys the glass substrate G1 held by the movable holding jig 10 in one direction (the direction of arrow A shown in FIG. 1, which is the forward direction in this embodiment) together with the movable holding jig 10.

[0025] The movable holding jig 10 holds the glass substrate G1 on which the film forming process is to be performed in a predetermined holding manner, and as will be described later, also has a function as a warpage amount correction means. As shown in FIG. 2(b), for example, a pair of movable holding jigs 10·10 are provided on both sides of the glass substrate G1 on which the film forming process is to be performed in a direction orthogonal to the conveyance direction (the direction of arrow A) of the conveyance device (not shown) in a plan view (in this embodiment, the left-right direction). Each movable holding jig 10 is composed of a jig main body 11, a jig movable part 12, and the like.

[0026] The jig main body 11 is formed with a holding portion 11a composed of a placement surface 11x formed of a horizontal plane and a regulation surface 11y formed of a vertical plane standing upright with respect to the placement surface 11x. Also, the pair of jig main bodies 11·11 are arranged with the holding portions 11a·11a facing each other, and are provided so as to be movable in the proximity direction and the separation direction (in this embodiment, the left-right direction). That is, the pair of jig main bodies 11·11 are horizontally separated from each other independently, and the space therebetween is a space.

[0027] As shown in FIG. 2(a), the pair of jig main bodies 11·11 hold both side edge portions Gb·Gb in the width direction (in this embodiment, the left-right direction) of the glass substrate G1 via the holding portions 11a·11a.

[0028] On the other hand, the jig movable part 12 enables the jig main body 11 to move in the proximity direction and the separation direction based on a command signal from the control device 40, and may have any configuration such as an electric actuator using a servo motor or the like as a drive source, a hydraulic actuator, or a pneumatic actuator.

[0029] With a pair of movable holding jigs 10·10 having such a configuration, the glass substrate G1 is held in a predetermined holding mode as shown below. That is, when the glass substrate G1 is held by the pair of movable holding jigs 10·10, the positions of the respective jig bodies 11·11 are such that the interval length W1 between the regulating surfaces 11y·11y of the respective holding portions 11a·11a is slightly smaller than the width direction length W0 when the glass substrate G1 to be held is in a flat state (the state of the glass substrate G1A shown by the two-dot chain line in Fig. 2(a)), and is preset at a predetermined position (W0 < W1).

[0030] And in a state where the glass substrate G1 has not been held yet, the pair of jig bodies 11·11 are in a state of being stopped at a position where the glass substrate G1 can be placed on the placement surfaces 11x·11x without being regulated by the respective regulating surfaces 11y·11y, that is, a position where the interval length W1 is slightly larger than the width direction length W0 (W0 < W1). In such a state, when the glass substrate G1 is placed on the pair of jig bodies 11·11, the jig bodies 11·11 are immediately moved to the above-mentioned predetermined position by the jig movable portions 12·12.

[0031] As a result, the glass substrate G1 is regulated in the compression direction toward the central portion in the width direction by the regulating surfaces 11y of the respective holding portions 11a, and is held by the pair of movable holding jigs 10·10 in a state of having a uniform curved shape with the central portion in the width direction convex upward. In other words, as a predetermined holding mode of the glass substrate G1 in the present embodiment, while the main surface Ga is directed in the vertical direction, the longitudinal direction is the conveyance direction of the above-mentioned conveyance device, and the glass substrate G1 is held by the pair of movable holding jigs 10·10 in a state of being warped into a curved shape so as to be convex on one main surface Ga (in the present embodiment, the upper surface Ga1) side.

[0032] And in a state of being held by a pair of movable holding jigs 10·10, the glass substrate G1 moves relative to a film forming nozzle 20 located on the upper side and a heating device 30 located on the lower side, so that the film forming gas Gs supplied from the film forming nozzle 20 can be received without any shielding on the entire surface of one main surface Ga (upper surface Ga1), and the heating of the heating device 30 can be received on substantially the entire surface of the other main surface Ga (lower surface Ga2).

[0033] Incidentally, as will be described later, in the present embodiment, during the execution of the film forming process, the control device (monitoring means) 40 constantly monitors the actual warpage amount (actual warpage amount) αa of the glass substrate G1. When the actual warpage amount αa is different from the reference warpage amount α which is a predetermined value set in advance, the pair of movable holding jigs 10·10 immediately move (translate) in the approaching direction or the separating direction to correct the actual warpage amount αa to the reference warpage amount α which is a predetermined value, and has a function as a warpage amount correcting means.

[0034] By the way, in the manufacturing process of the glass substrate G1, when the film forming process is performed separately (offline) from other processes, the pair of movable holding jigs 10·10 are fixed while holding the glass substrate G1, and the film forming nozzle 20 is movable, or vice versa, the film forming nozzle 20 is fixed, and the pair of movable holding jigs 10·10 are movable while holding the glass substrate G1. Also, in the manufacturing process of the glass substrate G1, when the film forming process is performed continuously (online) with other processes, as shown by the present embodiment, the pair of movable holding jigs 10·10 are installed on the above-described transfer device.

[0035] The film forming nozzle 20 supplies a film forming gas Gs, which is an example of a film forming material, to the glass substrate G1 from one main surface Ga (upper surface Ga1) side of the glass substrate G1. The film forming nozzle 20 is disposed above the glass substrate G1 held by the pair of movable holding jigs 10·10.

[0036] The film-forming nozzle 20 is arranged with the ejection port 20a facing downward, and a film-forming gas Gs for forming a transparent conductive film G2 such as an FTO film, an ATO film, or an ITO film (see Fig. 2(b)) can be discharged uniformly across the entire width direction of the glass substrate G1.

[0037] In this embodiment, although the film-forming gas Gs is used as an example of the film-forming material, it is not limited thereto, and a film-forming mist can also be used.

[0038] Here, as described above, since the glass substrate G1 is held in a uniform curved shape with the central portion in the width direction convex upward by a pair of movable holding jigs 10·10, accordingly, the ejection port 20a is also configured to have a uniform curved shape with the central portion in the above width direction concave upward. That is, the distance length L1 between the lower end of the ejection port 20a and the upper surface Ga1 of the glass substrate G1 is substantially equalized across the width direction of the glass substrate G1.

[0039] The heating device 30 uniformly heats the base glass substrate G1 from the other main surface (the lower surface Ga2 in this embodiment) side across the entire width direction when performing the film-forming process. As shown in Fig. 1, the heating device 30 is arranged along the width direction of the glass substrate G1 below the film-forming nozzle 20 and below the glass substrate G1 held by a pair of movable holding jigs 10·10.

[0040] Then, the heating device 30 heats the glass substrate G1 to about 550°C, which is an appropriate temperature in the film-forming process by the thermal CVD method, centering on a heating range X2 set to include the range (i.e., the film-forming range X1 where the transparent conductive film G2 is formed) mainly sprayed with the film-forming gas Gs ejected from the film-forming nozzle 20 inside.

[0041] In addition, in the present embodiment, in order to shorten the heating time required for the temperature of the glass substrate G1 to rise to a predetermined temperature when performing the film forming process, a preliminary heating device 30A having the same configuration as the heating device 30 is provided on the upstream side (the rear side in the present embodiment) in the transport direction of the transport device with respect to the heating device 30, but it is not limited thereto. That is, in the manufacturing apparatus 1 in the present embodiment, it is sufficient to include at least the heating device 30 located directly below the film forming nozzle 20. For example, without providing the preliminary heating device 30A, an annealing heating device (not shown) having the same configuration as the heating device 30 may be provided on the downstream side (the front side in the present embodiment) in the transport direction of the transport device with respect to the heating device 30, or both the preliminary heating device 30A and the annealing heating device may be provided together with the heating device 30.

[0042] As shown in FIG. 3(a), the heating device 30 includes a casing 31 having an opening 31a on one side (the upper side in the present embodiment), a radiant heat source 32 disposed in the casing 31, and a condenser mirror 33 that condenses the infrared rays radiated from the radiant heat source 32 toward the opening 31a side. Here, as the radiant heat source 32, a known radiant heat source that heats an object to be heated using radiant heat, for example, a radiant heat source such as a halogen lamp or a xenon lamp can be used.

[0043] A conversion unit 34 that converts the spectrum of the infrared rays radiated from the radiant heat source 32 is disposed at the opening 31a of the casing 31. The conversion unit 34 includes a plate-shaped infrared radiation unit 35 formed of a material containing Si element. Here, examples of the material containing Si element that constitutes the infrared radiation unit 35 include glass, silicon nitride, mullite, aluminum silicate, cordierite, and zircon. Examples of the glass include silicate glass, non-alkali glass, and crystallized glass.

[0044] Note that the substance containing Si element that constitutes the infrared radiation part 35 is preferably a substance having radiation characteristics close to those of the glass substrate G1 which is the object to be heated (for example, the emissivity at a wavelength of 5 to 8 μm is 90% or more), and more preferably a substance having the same radiation characteristics as the glass substrate G1. Also, the glass that constitutes the infrared radiation part 35 is preferably glass with suppressed thermal expansion (for example, glass with a coefficient of thermal expansion of 60×10 -7 / °C or less).

[0045] The infrared radiation part 35 has a first surface 35a located on the side where infrared rays from the radiation heat source 32 are incident, and a second surface 35b located on the opposite side of the first surface 35a and on the side of the object to be heated (glass substrate G1). The thickness dimension of the infrared radiation part 35 defined as the distance between the first surface 35a and the second surface 35b is preferably, for example, 5 mm or less, and more preferably 2 mm or less.

[0046] An infrared absorption part 36 composed of a black body is provided on the first surface 35a of the infrared radiation part 35. The infrared absorption part 36 is a film-like part formed by applying a black body paint to the first surface 35a of the infrared radiation part 35, and is uniformly provided over the entire surface of the first surface 35a.

[0047] The emissivity of the infrared absorption part 36 is preferably, for example, 90% or more, and more preferably 95% or more. Note that the black body paint that constitutes the infrared absorption part 36 is not particularly limited, and a known black body paint (for example, JSC-3 manufactured by Japan Sensor Co., Ltd.) can be used. Also, the infrared absorption part 36 may be composed of a black substance such as carbon.

[0048] The second surface 35b of the infrared radiation part 35 is exposed to the outside. Therefore, at least a part of the surface of the conversion part 34 on the side of the object to be heated (the upper side in this embodiment) is constituted by the second surface 35b of the infrared radiation part 35.

[0049] With the heating device 30 configured as described above, the glass substrate G1 is uniformly heated across the entire width direction centered on the heating range X2 (see FIG. 1). That is, as shown in FIG. 3(b), the infrared rays R1 radiated from the radiant heat source 32 are condensed by the condenser mirror 33 and absorbed by the infrared absorption part 36 of the conversion part 34. The infrared absorption part 36 that has absorbed the infrared rays R1 generates heat by thermal radiation.

[0050] When the infrared absorption part 36 generates heat, the infrared radiation part 35 in contact with the infrared absorption part 36 is heated by heat conduction, and infrared rays R2 of a spectrum based on the radiation characteristics of the substance containing the Si element that constitutes the infrared radiation part 35 are radiated from the second surface 35b of the heated infrared radiation part 35. In this way, the glass substrate G1 is uniformly heated across the entire width direction in the heating range X2 by the infrared rays R2 radiated uniformly from the entire surface of the second surface 35b of the infrared radiation part 35.

[0051] As described above, the control device 40 controls the operation of the entire manufacturing device 1, and is an example of monitoring means for monitoring the actual warpage amount (hereinafter, appropriately referred to as "actual warpage amount") αa of the glass substrate G1 held by the pair of movable holding jigs 10·10 (see FIG. 2(a)).

[0052] The control device 40 includes an arithmetic processing unit composed of a CPU (Central Processing Unit), a storage unit composed of a ROM (Read Only Memory), a RAM (Random Access Memory), an HDD (Hard Disk Drive), etc. Programs related to the operation of the movable holding jig 10, the film forming nozzle 20, the heating device 30, etc. are stored in advance in the storage unit.

[0053] Further, as shown in FIG. 2(a), the control device 40 is electrically connected to a displacement detection sensor 41 described later. In the storage unit, a predetermined warpage amount (hereinafter, appropriately referred to as "reference warpage amount") α preset for the glass substrate G1, and based on the information detected by the displacement detection sensor 41, a program for correcting the actual warpage amount αa of the glass substrate G1 to the reference warpage amount α is stored in advance.

[0054] Then, the control device 40 executes feedback control according to the control procedure during the film formation process described later, and while constantly monitoring the actual warpage amount αa of the glass substrate G1 held by the pair of movable holding jigs 10·10, executes a film formation process on the glass substrate G1.

[0055] The displacement detection sensor 41 is an example of a warpage amount detection means for detecting the actual warpage amount αa with respect to the glass substrate G1 held by the pair of movable holding jigs 10·10. In the present embodiment, it is configured by a transmissive laser displacement sensor having a pair of light projectors 41A and light receivers 41B.

[0056] The pair of light projectors 41A and light receivers 41B are respectively arranged on both sides in the width direction of the glass substrate G1 held by the pair of movable holding jigs 10·10. Specifically, the pair of light projectors 41A and light receivers 41B are in the vicinity of the upstream side (in the present embodiment, the rear side) in the conveyance direction of the conveyance device with respect to the film formation nozzle 20, and are arranged opposite to each other on both sides in the width direction of the glass substrate G1 held by the pair of movable holding jigs 10·10.

[0057] Then, the displacement detection sensor 41 detects the upper end position of the glass substrate G1 having a uniform curved shape convex upward as the actual warpage amount αa of the glass substrate G1 by the laser beam La irradiated from the light projector 41A toward the light receiver 41B, and transmits it to the control device 40 as an electrical signal. That is, the displacement detection sensor 41 detects the upper end position, that is, the actual warpage amount αa, from the sides (both sides in the width direction) excluding at least one main surface (upper surface Ga1) side of the glass substrate G1.

[0058] [Manufacturing Method of Glass Substrate with Film] Next, a manufacturing method of the film - attached glass substrate G embodied by this embodiment, and the operation procedure of the manufacturing apparatus 1 when performing a film - forming process will be described with reference to FIGS. 1 to 5. First, in FIG. 1, the pair of movable holding jigs 10·10 are in a stopped state at a predetermined loading position (not shown) that is sufficiently separated from the upstream side (the rear side in this embodiment) in the conveyance direction of the aforementioned conveyance apparatus (not shown) with respect to the film - forming nozzle 20.

[0059] Also, in FIG. 2(a), the pair of movable holding jigs 10·10 are in a stopped state where each jig body 11·11 is at a predetermined initial position (the position of the jig bodies 11A·11A indicated by the two - dot chain line in FIG. 2(a)), and the interval length between the regulating surfaces 11y·11y of each holding portion 11a·11a is substantially equal to the width - direction length W0 of the glass substrate G1 to be held.

[0060] Furthermore, the film - forming nozzle 20 is in a standby state without ejecting the film - forming gas Gs from the ejection port 20a. Also, the heating device 30 and the pre - heating device 30A are similarly in a standby state without radiating the infrared ray R1 from the radiation heat source 32 (see FIG. 3(a)).

[0061] Then, in the manufacturing apparatus 1 in such a state, when the glass substrate G1 is placed on the placement surfaces 11x·11x of the pair of movable holding jigs 10·10, the control device 40 transmits a command signal to the jig movable parts 12·12, and moves the pair of jig bodies 11·11 in the approaching direction (the direction toward the center in the width direction of the placed glass substrate G1).

[0062] As the pair of jig bodies 11·11 move forward, the glass substrate G1 gradually bulges while forming a uniform curved shape with the central portion in the width direction convex upward. Then, as described above, when each jig body 11 reaches a preset predetermined position, the control device 40 stops the movement of the pair of jig bodies 11·11. As a result, the pair of jig bodies 11·11 stop at a predetermined position where the interval length between the above-described regulating surfaces 11y·11y is W1, and the glass substrate G1 is held in a predetermined convex curved shape (a predetermined curved shape along the ejection port 20a of the film forming nozzle 20) substantially along the shape of the ejection port 20a of the film forming nozzle 20.

[0063] Note that the series of operations at the above-described loading position is not limited to the present embodiment. For example, in the pair of movable holding jigs 10·10, each jig body 11·11 may stop at a predetermined position where the interval length between the regulating surfaces 11y·11y is W1 from the beginning without being located at the above-described initial position.

[0064] In FIG. 1, when the movement of the pair of jig bodies 11·11 stops and the glass substrate G1 is held in a predetermined curved shape, the control device 40 transmits a command signal to the transfer device, and conveys the glass substrate G1 in the conveyance direction (the direction of arrow A) together with the pair of movable holding jigs 10·10. Then, when the end portion (the front end portion in the present embodiment) of the glass substrate G1 in the above-described conveyance direction reaches substantially directly below the film forming nozzle 20 and within the region of the film forming range X1, the control device 40 temporarily stops the conveyance by the transfer device.

[0065] When the front end portion of the glass substrate G1 reaches within the region of the film forming range X1, the film forming process on the upper surface Ga1 of the glass substrate G1 is started. That is, after temporarily stopping the conveyance by the transfer device, the control device 40 immediately transmits a command signal to the heating device 30 and the auxiliary heating device 30A, and starts the radiation of the infrared ray R1 by the radiation heat source 32. As a result, the infrared ray R2 described above is radiated from the heating device 30 and the backup heating device 30A, and the glass substrate G1 is uniformly heated across the entire width direction mainly within the heating range X2.

[0066] As the heating of the glass substrate G1 by the heating device 30 and the backup heating device 30A proceeds, and at least the temperature of the film formation range X1 on the glass substrate G1 is raised to a predetermined temperature (for example, within a temperature range of about 500 to 600 ° C, set to 550 ° C in this embodiment), the control device 40 transmits a command signal to the film formation nozzle 20 to start the ejection of the film formation gas Gs. In addition, the control device 40 transmits a command signal to the transfer device again, and transfers the glass substrate G1 in the transfer direction (the direction of arrow A) together with the pair of movable holding jigs 10·10.

[0067] As the transfer of the glass substrate G1 by the transfer device proceeds, on the upper surface Ga1 of the glass substrate G1, the film formation gas Gs is gradually sprayed from the front end portion toward the end portion on the opposite side of the transfer direction (the rear end portion in this embodiment), and a transparent conductive film G2 is immediately formed in the region where the film formation gas Gs is sprayed.

[0068] When the rear end portion of the glass substrate G1 reaches a position substantially directly below the film formation nozzle 20, the control device 40 stops the transfer by the transfer device again. In addition, after stopping the transfer by the transfer device again, the control device 40 stops the ejection of the film formation gas Gs by the film formation nozzle 20 and stops the heating by the heating device 30 and the backup heating device 30A. Thereby, the film formation process on the upper surface Ga1 of the glass substrate G1 is completed.

[0069] When the film formation process on the glass substrate G1 is completed, the control device 40 transmits a command signal to the transfer device, and transfers the produced glass substrate G with a film together with the pair of movable holding jigs 10·10 in the direction opposite to the transfer direction (the direction opposite to the direction of arrow A).

[0070] When the glass substrate G with a film thereon reaches the above input position, the control device 40 stops the conveyance by the conveyance device and returns the pair of movable holding jigs 10·10 to the above-described predetermined initial state. Thereafter, the produced glass substrate G with a film thereon is taken out from the manufacturing apparatus 1, and a series of operations in the case of performing the film forming process by the manufacturing apparatus 1 are completed.

[0071] By the way, as described above, when the front end portion of the glass substrate G1 reaches the region of the film forming range X1 and the heating by the heating device 30 and the preliminary heating device 30A is started, the glass substrate G1 undergoes thermal expansion according to the supplied amount of heat, and mainly centered on the range of the heating range X2, the local actual warpage amount αa increases (that is, a uniform curved shape convex upward bulges and the upper end position of the curved shape rises).

[0072] In addition, when the ejection of the film forming gas Gs by the film forming nozzle 20 is started and the conveyance of the glass substrate G1 by the conveyance device proceeds, on the downstream side (front side in this embodiment) of the glass substrate G1 in the above conveyance direction, the formed transparent conductive film G2 gradually takes away the heat amount, while on the upstream side (rear side in this embodiment) of the above conveyance direction, the heat amount is continuously supplied within the heating range X2. Therefore, the thermal history is greatly different between the upstream side (rear side) and the downstream side (front side) of the glass substrate G1 in the above conveyance direction, and the actual warpage amount αa increases toward the upstream side (rear side).

[0073] Thus, during the execution of the film forming process on the upper surface Ga1 of the glass substrate G1, since the actual warpage amount αa of the glass substrate G1 arbitrarily changes (increases or decreases) with the passage of time between the upstream side (rear side) and the downstream side (front side) in the above conveyance direction, it is difficult to keep the distance between the ejection port 20a of the film forming nozzle 20 and the main surface Ga (upper surface Ga1) of the glass substrate G1 constant from immediately after the execution of the film forming process until immediately before the end. As a result, the film thickness of the formed transparent conductive film G2 becomes non-uniform, which may be a factor causing variations in film characteristics.

[0074] Therefore, in the present embodiment, at least from immediately before starting the film-forming process on the upper surface Ga1 of the glass substrate G1 to immediately after the completion of the film-forming process, the control device 40 constantly monitors the actual warpage amount αa of the glass substrate G1 according to the following control procedure. When the actual warpage amount αa is different from a preset reference warpage amount α, feedback control is performed to correct the actual warpage amount αa to the reference warpage amount α by a pair of movable holding jigs 10·10.

[0075] Specifically, from the time when the front end portion of the glass substrate G1 reaches within the region of the film-forming range X1, the displacement detection sensor 41 constantly detects the upper end position of the curved shape in the glass substrate G1, and at predetermined time intervals (for example, 1 / hundreds to 1 / dozens of seconds), converts the detected upper end position into an electrical signal as the actual warpage amount αa of the glass substrate G1 and transmits it to the control device 40.

[0076] Then, as shown in FIG. 4, the control device 40 that has received the electrical signal from the displacement detection sensor 41 (step S01) executes a comparison operation between the detected actual warpage amount αa and a preset reference warpage amount α based on the electrical signal, and determines whether the actual warpage amount αa is equal to the reference warpage amount α (step S02).

[0077] As a result, when it is determined that the actual warpage amount αa is equal to the reference warpage amount α (YES determination), the control device 40 subsequently executes step S04 described later. On the other hand, when it is determined that the actual warpage amount αa is not equal to the reference warpage amount α and is different (NO determination), the control device 40 executes an addition and subtraction operation between the detected actual warpage amount αa and the preset reference warpage amount α to calculate the moving direction and moving distance of a pair of movable holding jigs 10·10 (more specifically, jig bodies 11·11) for correcting the actual warpage amount αa of the glass substrate G1 to the reference warpage amount α (step S03), and based on the calculation result, transmits a command signal to a pair of movable holding jigs 10·10 (more specifically, jig movable parts 12·12).

[0078] That is, as shown in FIG. 5(a), for example, when the actual warpage amount αa of the glass substrate G1 increases compared to the reference warpage amount α due to thermal expansion, the control device 40, as shown in FIG. 5(b), moves the pair of jig bodies 11·11 by a predetermined distance in the separating direction (the direction toward the width direction of the placed glass substrate G1) in step S03, and corrects the actual warpage amount αa of the glass substrate G1 to be the reference warpage amount α. Alternatively, although not shown in the figure, for example, when the actual warpage amount αa of the glass substrate G1 decreases compared to the reference warpage amount α due to factors such as the influence of the transparent conductive film G2 immediately after formation and the ambient temperature change (i.e., when it is approximated to a flat state), the control device 40 moves the pair of jig bodies 11·11 by a predetermined distance in the approaching direction in step S03, and corrects the actual warpage amount αa of the glass substrate G1 to be the reference warpage amount α.

[0079] Then, as shown in FIG. 4, after the end of step S03, the control device 40 determines whether the film forming process on the upper surface Ga1 of the glass substrate G1 has ended (step S04). If the film forming process has ended (YES determination), the control device ends the series of feedback controls according to steps 01 to S04. On the other hand, if the film forming process has not ended (NO determination), the control device 40 waits for an electrical signal to be received again from the displacement detection sensor 41, and then resumes the series of feedback controls.

[0080] In this way, in the present embodiment, at least from immediately before starting the film forming process on the upper surface Ga1 of the glass substrate G1 to immediately after the end of the film forming process, by executing the series of feedback controls according to steps 01 to S04, the control means 40 monitors the actual warpage amount αa of the glass substrate G1 and keeps the actual warpage amount αa as close as possible to the reference warpage amount α.

[0081] Therefore, from immediately after the execution of the film-forming process until immediately before the end, the distance between the ejection port 20a of the film-forming nozzle 20 and the main surface Ga (upper surface Ga1) of the glass substrate G1 can be kept substantially constant, the film thickness of the formed transparent conductive film G2 can be made uniform, and variations in film characteristics can be suppressed.

[0082] [Manufacturing Apparatus 101 for Glass Substrate with Film (Second Embodiment)] Next, a manufacturing apparatus (hereinafter simply referred to as the "manufacturing apparatus") 101 for a glass substrate G with a film in a second embodiment, which implements the manufacturing method of the glass substrate with a film according to the present invention, will be described with reference to FIG. 6. The manufacturing apparatus 101 in the second embodiment has a configuration substantially equivalent to that of the manufacturing apparatus 1 in the first embodiment described above, while being different from the manufacturing apparatus 1 in that the heating device 130 mainly has a function as a warpage amount correction means. Therefore, in the following description, mainly the differences from the manufacturing apparatus 1 described above will be described, and the description of the configuration equivalent to that of the manufacturing apparatus 1 will be omitted.

[0083] As shown in FIG. 6(a), the manufacturing apparatus 101 mainly includes a fixed holding jig 110, a film-forming nozzle 120, a heating device 130, a control device 140 that controls the operation of the entire manufacturing apparatus 1, a displacement detection sensor 141, and a transport device (not shown) that transports the glass substrate G1 together with the fixed holding jig 110.

[0084] Note that the configurations of the film-forming nozzle 120, the control device 140, the displacement detection sensor 141, and the transport device are substantially equivalent to the configurations of the film-forming nozzle 20, the control device 40, the displacement detection sensor 41, and the transport device (not shown) in the manufacturing apparatus 1 described above, and thus the description thereof will be omitted.

[0085] The fixed holding jig 110 holds the glass substrate G1 on which the film-forming process is to be performed in a predetermined holding manner. The fixed holding jigs 110·110 are provided in a pair on both sides in the direction orthogonal to the conveyance direction (direction of arrow A) of the above-described conveyance device (not shown) in plan view, i.e., in the left-right direction in this embodiment, with respect to the glass substrate G1 on which the film formation process is performed. Each fixed holding jig 110 is constituted by a jig body 111 or the like.

[0086] Note that, since the configuration of the jig body 111 is substantially the same as the configuration of the jig body 11 of the movable holding jig 10 in the manufacturing apparatus 1 described above, the description thereof is omitted.

[0087] The pair of jig bodies 111·111 are arranged in a state where the holding portions 111a·111a face each other, and the interval length W11 between the regulating surfaces 111y·111y of the respective holding portions 111a·111a is set in advance to be a predetermined position that is slightly smaller than the width direction length W0 (see FIG. 2) when the glass substrate G1 to be held is flattened (W0 < W1).

[0088] When the glass substrate G1 is placed on the pair of jig bodies 111·111, the glass substrate G1 is held by the pair of fixed holding jigs 110·110 in a curved and warped state such that the main surface Ga faces in the vertical direction, the longitudinal direction is the conveyance direction of the above-described conveyance device, and one main surface Ga (the upper surface Ga1 in this embodiment) side is convex.

[0089] Note that the configuration of the holding jig for holding the glass substrate G1 in a predetermined holding mode is not limited to the fixed holding jig 110 as in this embodiment, and for example, it is also possible to employ the movable holding jig 10 in the first embodiment described above.

[0090] The heating device 130 uniformly heats the base glass substrate G1 from the other main surface (the lower surface Ga2 in this embodiment) side over the entire width direction when performing the film formation process, and also has a function as a warpage amount correction means described later. The heating device 130 is disposed directly below the film forming nozzle 120 and below the glass substrate G1 held by the pair of fixed holding jigs 110·110, along the width direction of the glass substrate G1.

[0091] Note that, since the configuration of the heating device 130 is substantially the same as that of the heating device 30 in the manufacturing apparatus 1 described above, the description thereof is omitted.

[0092] The heating device 130 is configured to be able to increase or decrease the output of the infrared rays R2 emitted based on a command signal from the control device 140. In this embodiment, during the execution of the film forming process, the control device (monitoring means) 140 constantly monitors the actual warpage amount αa of the glass substrate G1. When the actual warpage amount αa is different from a preset reference warpage amount α, the heating device 130 immediately changes the output of the infrared rays R2 and adjusts the amount of heat supplied to the glass substrate G1, thereby correcting the actual warpage amount αa to the reference warpage amount α, and also serving as a warpage amount correction means.

[0093] Specifically, at least from immediately before starting the film forming process on the upper surface Ga1 of the glass substrate G1 until immediately after the completion of the film forming process, in the above-described feedback control, for example, when the actual warpage amount αa of the glass substrate G1 increases compared to the reference warpage amount α due to thermal expansion, the control device 140 immediately suppresses the output of the infrared rays R2 as shown in FIG. 6(b), decreases the amount of heat supplied to the glass substrate G1, and corrects the actual warpage amount αa of the glass substrate G1 to be the reference warpage amount α. Alternatively, although not shown, for example, when the actual warpage amount αa of the glass substrate G1 decreases compared to the reference warpage amount α (i.e., when it approximates a flat shape) due to factors such as the influence of the transparent conductive film G2 immediately after formation and ambient temperature changes, the control device 140 immediately increases the output of the infrared rays R2, increases the amount of heat supplied to the glass substrate G1, and corrects the actual warpage amount αa of the glass substrate G1 to be the reference warpage amount α.

[0094] As described above, in the manufacturing apparatus 101 according to the second embodiment, the heating device 130 constitutes the warp amount correction means, and at least from immediately before starting the film forming process on the upper surface Ga1 of the glass substrate G1 to immediately after the film forming process is completed, by executing the above-described series of feedback controls, the control means 140 monitors the actual warp amount αa of the glass substrate G1, and keeps the actual warp amount αa as close as possible to the reference warp amount α.

[0095] Therefore, also in this embodiment, from immediately after the execution of the film forming process to immediately before the end thereof, the distance between the ejection port 120a of the film forming nozzle 120 and the main surface Ga (upper surface Ga1) of the glass substrate G1 can be kept substantially constant, the film thickness of the formed transparent conductive film G2 becomes uniform, and variations in film characteristics can be suppressed.

[0096] Note that, regarding other operation procedures when performing the film forming process by the manufacturing apparatus 101 in the second embodiment, since they are substantially equivalent to those of the manufacturing apparatus 1 in the first embodiment described above, the description thereof is omitted.

[0097] [Manufacturing Apparatus 201 for Glass Substrate with Film (Third Embodiment)] Next, the manufacturing apparatus 201 for the glass substrate G with film in the third embodiment, which implements the manufacturing method for the glass substrate with film according to the present invention (hereinafter simply referred to as the "manufacturing apparatus"), will be described with reference to Fig. 7(a). The manufacturing apparatus 201 in the third embodiment has a configuration substantially equivalent to that of the manufacturing apparatus 1 in the first embodiment described above, while mainly differing from the manufacturing apparatus 1 in the configuration of the displacement detection sensor 241. Therefore, in the following description, mainly the differences from the above-described manufacturing apparatus 1 will be described, and the description of the configuration equivalent to that of the manufacturing apparatus 1 will be omitted.

[0098] The manufacturing apparatus 201 mainly includes a movable holding jig 210, a film forming nozzle 220, a heating device 230, a control device 240 that controls the operation of the entire manufacturing apparatus 201, and a transfer device (not shown) that transfers the glass substrate G1 together with the movable holding jig 210, etc.

[0099] Note that, regarding the configurations of the movable holding jig 210, the film forming nozzle 220, the heating device 230, the control device 240, and the above-described transfer device, since they are substantially equivalent to the configurations of the movable holding jig 10, the film forming nozzle 20, the heating device 30, the control device 40, and the transfer device (not shown) in the manufacturing apparatus 1 described above, the description thereof is omitted.

[0100] The displacement detection sensor 241 is an example of a warpage amount detection means for detecting the actual warpage amount αa with respect to the glass substrate G1 held by the pair of movable holding jigs 210·210. In the present embodiment, it is configured by a reflection type laser displacement sensor.

[0101] The displacement detection sensor 241 is electrically connected to the control device 240, and is disposed in the vicinity of the upstream side (the rear side in the present embodiment) in the transfer direction of the transfer device with respect to the film forming nozzle 220, above the heating device 230, and on the other main surface (lower surface Ga2) side with respect to the glass substrate G1.

[0102] Then, the displacement detection sensor 241 irradiates the laser beam La toward the lower surface Ga2 of the glass substrate G1 and reflects it, thereby detecting the upper end position of the glass substrate G1 having a uniform curved shape convex upward as the actual warpage amount αa of the glass substrate G1, and transmitting it to the control device 240 as an electrical signal. That is, the displacement detection sensor 241 detects the upper end position, that is, the actual warpage amount αa, from the side (lower surface Ga2 side) excluding at least one main surface (upper surface Ga1) side with respect to the glass substrate G1.

[0103] Note that, regarding the operation procedure when performing the film forming process by the manufacturing apparatus 201 in the third embodiment, and at least the feedback control executed from immediately before starting the film forming process on the upper surface Ga1 of the glass substrate G1 until immediately after the completion of the film forming process, since it is substantially equivalent to the manufacturing apparatus 1 in the first embodiment described above, the description thereof is omitted.

[0104] [Manufacturing Apparatus 301 for Glass Substrate with Film (Fourth Embodiment)] Next, a manufacturing apparatus (hereinafter simply referred to as the "manufacturing apparatus") 301 for a glass substrate with a film in the fourth embodiment, which implements the manufacturing method for a glass substrate with a film according to the present invention, will be described with reference to FIG. 7(b). The manufacturing apparatus 301 in the fourth embodiment has a configuration substantially equivalent to that of the manufacturing apparatus 1 in the first embodiment described above, while mainly differing from the manufacturing apparatus 1 in the configuration of the displacement detection sensor 341. Therefore, in the following description, mainly the differences from the manufacturing apparatus 1 described above will be described, and the description of the configuration equivalent to that of the manufacturing apparatus 1 will be omitted.

[0105] The manufacturing apparatus 301 mainly includes a movable holding jig 310, a film forming nozzle 320, a heating device 330, a control device 340 that controls the operation of the entire manufacturing apparatus 301, and a transfer device (not shown) that transfers the glass substrate G1 together with the movable holding jig 310, etc.

[0106] Note that the configurations of the movable holding jig 310, the film forming nozzle 320, the heating device 330, the control device 340, and the transfer device are substantially equivalent to the configurations of the movable holding jig 10, the film forming nozzle 20, the heating device 30, the control device 40, and the transfer device (not shown) in the manufacturing apparatus 1 described above, and thus the description thereof will be omitted.

[0107] The displacement detection sensor 341 is an example of a warpage amount detection means for detecting the actual warpage amount αa with respect to the glass substrate G1 held by a pair of movable holding jigs 310·310, and in this embodiment, it is configured by a contact type displacement sensor.

[0108] The displacement detection sensor 341 is electrically connected to the control device 340, and is disposed in the vicinity of the upstream side (the rear side in this embodiment) in the transfer direction of the transfer device with respect to the film forming nozzle 320, above the heating device 330, and on the other main surface (lower surface Ga2) side with respect to the glass substrate G1.

[0109] Then, the displacement detection sensor 341 abuts the tip of the plunger 341a against the lower surface Ga2 of the glass substrate G1, detects the upper end position of the glass substrate G1 having a uniform curved shape convex upward as the actual warpage amount αa of the glass substrate G1, and transmits it to the control device 40 as an electrical signal. That is, the displacement detection sensor 341 detects the upper end position, that is, the actual warpage amount αa, from the side (lower surface Ga2 side) excluding at least one main surface (upper surface Ga1) side with respect to the glass substrate G1.

[0110] Note that the operation procedure when performing the film forming process by the manufacturing apparatus 301 in the fourth embodiment, and the feedback control executed at least from immediately before starting the film forming process on the upper surface Ga1 of the glass substrate G1 to immediately after the completion of the film forming process are substantially the same as those of the manufacturing apparatus 1 in the first embodiment described above, and thus the description thereof is omitted.

[0111] [Effect] As described above, the method for manufacturing a glass substrate with a film embodied by the present embodiment (the first to fourth embodiments described above) is a method for manufacturing a glass substrate with a film G by performing a film forming process on the main surface Ga of the glass substrate G1. In this method, the glass substrate G1 is held in a warped state in a curved shape so as to be convex on one main surface Ga (upper surface Ga1 in the present embodiment) side, and while heating the glass substrate G1 from the other main surface Ga (lower surface Ga2 in the present embodiment) side, a film forming gas (film forming material) Gs is supplied to the glass substrate G1 from one main surface Ga (upper surface Ga1) side. Then, the manufacturing apparatus 1 (101, 201, or 301) constantly monitors the warpage amount (actual warpage amount α) of the glass substrate G1 by the control device (monitoring means) 40 (140, 240, or 340). When the actual warpage amount αa is different from a preset reference warpage amount α, the warpage amount correcting means (a pair of movable holding jigs 10·10 (210·210, or 310·310), or the heating device 130) corrects the actual warpage amount αa to be the reference warpage amount α.

[0112] By having such a configuration, according to the method for manufacturing a glass substrate with a film in the present embodiment (the first to fourth embodiments), by constantly monitoring with the control device (monitoring means) 40 (140, 240, or 340), the actual warpage amount αa of the base glass substrate G1 can always be maintained at a preset reference warpage amount α. From immediately after the execution of the film-forming process until immediately before the end, the distance between the ejection port 20a of the film-forming nozzle 20 (120, 220, or 320) that supplies the film-forming gas (film-forming material) Gs and one main surface Ga (upper surface Ga1) of the glass substrate G1 can be kept constant. Therefore, according to the method for manufacturing a glass substrate with a film in the present embodiment (the first to fourth embodiments), it is possible to suppress variations in film characteristics after the film-forming process caused by deformation of the glass substrate G1 that may occur due to heating during the film-forming process.

[0113] Also, as shown by the first embodiment described above, the warpage amount correction means includes a pair of movable holding jigs 10·10 that hold both side edges Gb·Gb in the width direction of the glass substrate G1. The pair of movable holding jigs 10·10 are arranged to face each other and are movable in the approaching direction and the separating direction (in this embodiment, the left-right direction) to correct the actual warpage amount αa of the glass substrate G1.

[0114] According to the method for manufacturing a glass substrate with a film in the first embodiment having such a configuration, there is no need to newly provide a mechanism for correcting the actual warpage amount αa of the base glass substrate G1 separately. Mainly, by using the movable holding members 10·10 for holding the glass substrate G1 in a warped state in a curved shape, the actual warpage amount αa of the glass substrate G1 can be corrected. Therefore, compared with conventional equipment, an increase in equipment cost can be suppressed, and it is economical.

[0115] Also, as shown by the above-described second embodiment, the warp amount correction means includes a heating device 130 that heats the glass substrate G1 from the other main surface Ga (lower surface Ga2) side, and the heating device 130 may correct the actual warp amount αa of the glass substrate G1 by adjusting the amount of heat supplied to the glass substrate G1 (that is, by changing the output of the infrared ray R2).

[0116] Even in the manufacturing method of the coated glass substrate in the second embodiment having such a configuration, there is no need to newly provide a mechanism for correcting the actual warp amount αa of the base glass substrate G1 separately. By adjusting the output (the amount of heat supplied) of the heating device 130 that heats the main surface Ga of the glass substrate G1, the actual warp amount αa of the glass substrate G1 can be corrected. Therefore, an increase in equipment cost can be suppressed compared to conventional equipment, and it is economical.

[0117] Further, in the manufacturing method of the coated glass substrate in the present embodiment (first embodiment to fourth embodiment), the above-described control device (monitoring means) 40 (140, 240, or 340) is configured to detect the actual warp amount αa of the glass substrate G1 from a side excluding at least one main surface Ga (upper surface Ga1) side of the glass substrate G1, and includes a warp amount detection means (a displacement detection sensor 41 (141) composed of a transmissive laser displacement sensor, a displacement detection sensor 241 composed of a reflective laser displacement sensor, or a displacement detection sensor 341 composed of a contact displacement sensor).

[0118] Here, as the film-forming process is carried out, a part of the film-forming gas (film-forming material) Gs is always in a state of rising as gas from one main surface Ga (upper surface Ga1) of the glass substrate G1 to which the film-forming gas (film-forming material) Gs is supplied. According to the method for manufacturing a glass substrate with a film in the present embodiment (the first to fourth embodiments), at a position avoiding the gas rising from one main surface Ga (upper surface Ga1) of such a glass substrate G1, by providing a warp amount detection means (displacement detection sensor 41(141), displacement detection sensor 241, or displacement detection sensor 341), it is possible to reduce the warp amount detection error caused by the gas, or to prevent the reduction of the service life of the warp amount detection means (displacement detection sensor 41(141), displacement detection sensor 241, or displacement detection sensor 341) as much as possible.

[0119] And as shown by the first and second embodiments described above, the warp amount detection means is constituted by a displacement detection sensor 41(141) which is a transmissive laser displacement sensor having a pair of a light projector 41A and a light receiver 41B, and the pair of the light projector 41A and the light receiver 41B are respectively arranged on both sides in the width direction of the glass substrate G1 with respect to the glass substrate G1.

[0120] By having such a configuration, without directly touching the glass substrate G1, the actual warp amount αa of the glass substrate G1 can be detected using the displacement detection sensor 41(141) which is a transmissive laser displacement sensor. Therefore, the quality of the produced glass substrate G with a film can be improved without accidentally damaging the glass substrate G1.

[0121] In addition, as shown by the third embodiment described above, the warp amount detection means may be constituted by a displacement detection sensor 241 which is a reflective laser displacement sensor and may be arranged on the other main surface Ga (lower surface Ga2) side with respect to the glass substrate G1.

[0122] By having such a configuration, similarly to the case of using the displacement detection sensor 41(141) composed of the above-described transmissive laser displacement sensor, it is possible to improve the quality of the glass substrate G with a film formed thereon without accidentally damaging the glass substrate G1. In addition, since a pair of a light projector 41A and a light receiver 41B are not required as components, the number of components, wiring, etc. are reduced, which is economical.

[0123] Also, as shown by the above-described fourth embodiment, the warp amount detection means may be constituted by a displacement detection sensor 341 composed of a contact type displacement sensor and may be arranged on the other main surface Ga (lower surface Ga2) side with respect to the glass substrate G1.

[0124] By having such a configuration, the plunger 341a of the displacement detection sensor 341 composed of a contact type displacement sensor is directly abutted against the other main surface Ga (lower surface Ga2) avoiding the one main surface Ga (upper surface Ga1) on which the film forming process is performed with respect to the glass substrate G1, so as to detect the actual warp amount αa of the glass substrate G1, and thus the actual warp amount αa of the glass substrate G1 can be detected more accurately.

[0125] And, in the method for manufacturing a glass substrate with a film in the present embodiment (the above-described first to fourth embodiments), the film forming process performed on the main surface Ga (upper surface Ga1) of the glass substrate G1 is characterized by being carried out by a thermal CVD method.

[0126] Thus, the method for manufacturing a glass substrate with a film in the present embodiment (first to fourth embodiments) is a manufacturing method such as a thermal CVD method which is a film forming process involving heating, in which unexpected deformations such as curvature and undulation are likely to occur in the base glass substrate G1, resulting in non-uniform film thickness after the film forming process and variations in film characteristics. Against such a manufacturing method, it is possible to more effectively suppress variations in film characteristics after the film forming process.

Explanation of Reference Numerals

[0127] 1 Manufacturing apparatus (first embodiment) 10 Movable holding means (warpage amount correction means) 40 Control device (monitoring means) 41 Displacement detection sensor (warpage amount detection means) 41A Light projector 41B Light receiver 101 Manufacturing apparatus (second embodiment) 130 Heating device (warpage amount correction means) 140 Control device (monitoring means) 141 Displacement detection sensor (warpage amount detection means) 201 Manufacturing apparatus (third embodiment) 240 Control device (monitoring means) 241 Displacement detection sensor (warpage amount detection means) 301 Manufacturing apparatus (fourth embodiment) 340 Control device (monitoring means) 341 Displacement detection sensor (warpage amount detection means) G Glass substrate with film G1 Glass substrate Ga Main surface Ga1 Upper surface (one main surface) Ga2 Lower surface (the other main surface) Gb Side edge portion Gs Film-forming gas (film-forming material) α Reference warpage amount αa Actual warpage amount

Claims

1. In a method for manufacturing a glass substrate with a film by performing a film-forming process on a main surface of the glass substrate, while holding the glass substrate in a warped state with a curved shape such that one main surface side is convex, while heating the glass substrate from the other main surface side, a method for manufacturing a glass substrate with a film, which supplies a film-forming material to the glass substrate from the one main surface side, from immediately before the start of the film-forming process to immediately after the completion of the film-forming process, constantly monitors the warpage amount of the glass substrate by monitoring means, when the warpage amount is different from a preset reference warpage amount, corrects the warpage amount to the reference warpage amount by warpage amount correction means, the warpage amount correction means comprises a pair of movable holding jigs that hold both side edges in the width direction of the glass substrate, arranges the pair of movable holding jigs to face each other, and corrects the warpage amount of the glass substrate by moving them in the approaching direction and the separating direction. A method for manufacturing a glass substrate with a film, characterized by the above.

2. The warpage amount correction means comprises a heating device that heats the glass substrate from the other main surface side, the heating device corrects the warpage amount of the glass substrate by adjusting the amount of heat supplied to the glass substrate. A method for manufacturing a glass substrate with a film according to claim 1, characterized by the above.

3. The monitoring means for the glass substrate comprises warpage amount detection means for detecting the warpage amount from a side excluding at least the one main surface side. A method for manufacturing a glass substrate with a film according to claim 1 or claim 2, characterized by the above.

4. The warpage amount detection means comprises a transmissive laser displacement sensor having a pair of light emitters and light receivers, and arranges the pair of light emitters and light receivers on both sides in the width direction of the glass substrate with respect to the glass substrate, respectively. A method for manufacturing a glass substrate with a film according to claim 3, characterized by the above.

5. The warpage amount detection means comprises a reflective laser displacement sensor, and arranges the warpage amount detection means on the other main surface side with respect to the glass substrate. A method for manufacturing a glass substrate with a film according to claim 3, characterized by the above.

6. The warpage amount detection means comprises a contact type displacement sensor, and arranges the warpage amount detection means on the other main surface side with respect to the glass substrate. A method for manufacturing a glass substrate with a film according to claim 3, characterized by the above.

7. The film formation treatment applied to the main surface of the glass substrate is carried out by the thermal CVD method. A method for manufacturing a coated glass substrate according to any one of claims 1 to 6, characterized by the above.

Images