Substrate processing system and particle removal method

Abstract

To provide a technique for efficiently removing particles.SOLUTION: A particle removal operation has a process for conveying at least one end effector into any one of a vacuum transfer module, a substrate processing module, a load lock module, and an atmospheric transfer module, while at least one electrically charged charging member is placed on at least one end effector.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The following disclosure relates to a substrate processing system and a particle removal method.

Background Art

[0002] Patent Document 1 discloses a technique of placing a protection member incorporating a cooling and adsorption part such as a Peltier element so as to cover the upper surface of a stage in a chamber, performing evacuation while cooling the protection member by the cooling and adsorption part, and collecting particles.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] This disclosure provides a technique for efficiently removing particles.

Means for Solving the Problems

[0005] A substrate processing system according to an aspect of the present disclosure includes a vacuum transfer module, a substrate processing module, an atmospheric transfer module, a load lock module, at least one substrate transfer robot, and a control unit. The substrate processing module is connected to the vacuum transfer module and is configured to process a substrate in a reduced-pressure environment. The load lock module has an interior that can be switched between a reduced-pressure environment and an atmospheric pressure environment, is connected to the vacuum transfer module and the atmospheric transfer module, and relays the substrate between the vacuum transfer module and the atmospheric transfer module. At least one substrate transfer robot is disposed inside the vacuum transfer module and the atmospheric transfer module and includes at least one end effector. The control unit is configured to control a particle removal operation. The particle removal operation includes a step of transporting at least one end effector inside any one of the vacuum transfer module, the substrate processing module, the load lock module, and the atmospheric transfer module with at least one charged member placed on the at least one end effector.

Effect of the Invention

[0006] According to the present disclosure, there is an effect that particles can be efficiently removed.

Brief Description of the Drawings

[0007]

Figure 1

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DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the substrate processing system and the particle removal method disclosed in the present application will be described in detail with reference to the drawings. Note that the substrate processing system and the particle removal method disclosed are not limited by the following embodiments.

[0009] By the way, when the substrate processing system opens its interior to the atmosphere and performs operations during startup or maintenance, particles may be generated due to the intrusion of foreign substances. For example, when the substrate processing system opens its interior to the atmosphere and performs operations, moisture in the atmosphere adheres to the inner wall and remains, and hydrates, which are secondary products, are generated, resulting in the generation of particles. In addition, when the usage period of the substrate processing system becomes long, particles may be generated due to the influence of generated deposits, adhering gases, etc.

[0010] Conventionally, in a substrate processing system, a method has been implemented in which a dummy silicon wafer (hereinafter also referred to as a dummy wafer) is repeatedly conveyed inside, and particles are attached to the dummy wafer to remove the particles. Although a certain cleaning effect can be obtained even with such a conventional method, those due to free fall just happen to be on the dummy wafer, and the particle removal efficiency is low.

[0011] Therefore, a technology for efficiently removing particles is expected.

[0012] (Embodiment) (Substrate Processing System 1) Next, the embodiment will be described. FIG. 1 is a diagram showing an example of the schematic configuration of a substrate processing system 1 according to the embodiment. The substrate processing system 1 includes a plurality of vacuum processing chambers (hereinafter also referred to as process modules) PM1 to PM8, a vacuum transfer chamber 10, and an atmospheric pressure transfer chamber 20. In addition, the substrate processing system 1 further includes a plurality of load lock modules LLM1 to LLM2, a plurality of load ports LP1 to LP5, and a control device 30.

[0013] In the example of FIG. 1, eight process modules PM1 to PM8, two load lock modules LLM1 to LLM2, and five load ports LP1 to LP5 are shown. However, the numbers of the process modules PM, load lock modules LLM, and load ports LP included in the substrate processing system 1 are not limited to those shown. Hereinafter, when there is no particular need to distinguish, the eight process modules PM1 to PM8 are collectively referred to as the process module PM. Similarly, the two load lock modules LLM1 to LLM2 are collectively referred to as the load lock module LLM. Also similarly, the five load ports LP1 to LP5 are collectively referred to as the load port LP. Note that the substrate processing system 1 according to the present embodiment includes at least two load lock modules LLM.

[0014] The process module PM is configured to be airtight and can be depressurized inside by evacuating the inside by an evacuation mechanism. The process module PM performs substrate processing such as etching and film formation on the substrate W in a depressurized atmosphere where the inside is set to a predetermined depressurized state suitable for substrate processing. The substrate W is, for example, a semiconductor wafer. Each process module PM includes a stage ST for supporting the substrate W inside. The inside of the process module PM is maintained in a depressurized atmosphere during substrate processing. Each process module PM is connected to the vacuum transfer chamber 10 via an openable and closable gate valve GV.

[0015] The vacuum transfer chamber 10 is configured to be airtight, and by evacuating the inside with an exhaust mechanism, the inside can be brought into a reduced pressure state. The vacuum transfer chamber 10 transports the substrate W in a reduced pressure atmosphere in a predetermined reduced pressure state. For example, in the vacuum transfer chamber 10, a first transfer mechanism 15 for transporting the substrate W is disposed inside. The first transfer mechanism 15 has a robot arm that can be extended and retracted. At least one first transfer mechanism 15 is disposed in the vacuum transfer chamber 10 and includes at least one end effector. The first transfer mechanism 15 according to the present embodiment has a first arm 15a and a second arm 15b that can operate individually. The first arm 15a and the second arm 15b each have a substantially U-shaped pick at the tip and can each hold the substrate W. The first transfer mechanism 15 extends and retracts the robot arm to transfer the substrate W between the process modules PM1 to PM8 and the load lock modules LLM1 and LLM2. The substrate W is transferred to each process module PM via the vacuum transfer chamber 10. The substrate W processed in the process module PM can be transferred to the next process module PM where processing is to be performed via the vacuum transfer chamber 10. The substrate W for which all processing has been completed is transferred to the load lock module LLM via the vacuum transfer chamber 10.

[0016] The load lock module LLM is configured to be airtight, and the inside can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere by an exhaust mechanism. The load lock modules LLM are arranged side by side along one side of the vacuum transfer chamber 10 where the process modules PM are not arranged. The load lock module LLM and the vacuum transfer chamber 10 are configured such that their interiors can communicate via a gate valve GV. The load lock module LLM is connected to the normal pressure transfer chamber 20 on the side opposite to the side connected to the vacuum transfer chamber 10. The interiors of the load lock module LLM and the normal pressure transfer chamber 20 can communicate with each other via a gate valve GV.

[0017] The atmospheric-pressure transfer chamber 20 has its interior maintained at an atmospheric-pressure atmosphere. A plurality of load lock modules LLM are arranged in parallel on one side of the atmospheric-pressure transfer chamber 20. Also, a plurality of load ports LP are arranged in parallel on the other side of the atmospheric-pressure transfer chamber 20. Inside the atmospheric-pressure transfer chamber 20, a second transfer mechanism 25 for transferring the transfer object between the load lock module LLM and the load port LP is disposed. The second transfer mechanism 25 has an arm 25a. The arm 25a is rotatably fixed on a base 25d. The base 25d is fixed in the vicinity of the load port LP3. The tip of the arm 25a is rotatably connected to a first pick 27a and a second pick 27b having a substantially U-shaped configuration. In the present embodiment, the first transfer mechanism 15 and the second transfer mechanism 25 correspond to the substrate transfer robot of the present disclosure. Also, the picks of the first arm 15a and the second arm 15b, the first pick 27a, and the second pick 27b correspond to the end effector of the present disclosure.

[0018] The load port LP is formed so as to be attachable with a storage container (hereinafter also referred to as a Front Opening Unified Pod (FOUP)) that houses the substrate W. The FOUP is a storage container capable of housing the substrate W. The FOUP has an openable and closable lid (not shown). When the FOUP is installed in the load port LP, the lid of the FOUP and the door of the load port LP are engaged. In that state, by opening the door of the load port LP, the lid of the FOUP moves together with the door and the FOUP opens, and the inside of the FOUP and the atmospheric-pressure transfer chamber 20 communicate with each other through the load port LP.

[0019] The process module PM, the vacuum transfer chamber 10, the first transfer mechanism 15, the load lock module LLM, the atmospheric-pressure transfer chamber 20, the second transfer mechanism 25, and the load port LP configured as described above are each connected to a control device 30 and controlled by the control device 30.

[0020] The control device 30 is an information processing device such as a computer. The control device 30 controls each part of the substrate processing system 1. The specific configuration and functions of the control device 30 are not particularly limited. The control device 30 includes, for example, a storage unit 31, a processing unit 32, an input / output interface (IO I / F) 33, and a display unit 34. The storage unit 31 is an arbitrary storage device such as a hard disk, an optical disk, or a semiconductor memory element. The processing unit 32 is a processor such as a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). The display unit 34 is a functional unit that displays information, such as a liquid crystal screen or a touch panel. The processing unit 32 controls each part of the substrate processing system 1 via the input / output interface 33 by reading and executing programs and recipes stored in the storage unit 31.

[0021] Incidentally, when the substrate processing system 1 opens the inside of the process module PM, the vacuum transfer chamber 10, etc. to the atmosphere and performs work during startup or maintenance, particles may be generated due to the intrusion of foreign matter. In addition, when the usage period of the substrate processing system 1 becomes long, particles may be generated due to the influence of generated deposits, adhering gases, etc.

[0022] Conventionally, in a substrate processing system, a method has been implemented in which a dummy wafer is repeatedly conveyed inside, and particles are adhered to the dummy wafer to remove the particles. However, the conventional method is only one in which what falls freely happens to land on the dummy wafer, and the particle removal efficiency is low. For example, particles inside the vacuum transfer chamber 10, the load lock module LLM, and the atmospheric pressure transfer chamber 20 tend to fall from the upper part and the inner wall more often than in the process module PM. These particles continue continuously over a long period of time and may accumulate on the surfaces such as the lower part, the first transfer mechanism 15, and the second transfer mechanism 25, leading to secondary and tertiary contamination of the surface of the substrate W.

[0023] By the way, particles usually have either positive or negative charges, even without particularly active charge impartation.

[0024] Therefore, in this embodiment, at least one charged member is conveyed inside the substrate processing system 1, and the charged member is made to stay or move inside, and particles are adhered to the surface of the charged member by electrostatic force to collect the particles. Then, by carrying out the charged member with the adhered particles to the outside, the cleanliness inside the substrate processing system 1 is improved.

[0025] The charged member may be of any configuration as long as it can be charged. The charged member preferably has the same shape as the substrate W. By having the same shape as the substrate W, the charged member can be conveyed in the same manner as the substrate W by the conveyance system that conveys the substrate W, such as the first conveyance mechanism 15 and the second conveyance mechanism 25. For example, as the charged member, a film of an insulating film is formed on the surface of a semiconductor wafer such as a silicon wafer, or a dedicated dielectric film is formed on the surface of a semiconductor wafer can be used. The charged member can exhibit a cleaning function by applying a voltage or other means to impart charges to the surface and making it charged. Hereinafter, the case where the charged member has the same shape as the substrate W will be described.

[0026] Figures 2A and 2B are diagrams showing an example of a charged member according to an embodiment. In FIGS. 2A and 2B, the case where the charged member is a cleaning semiconductor wafer CW (hereinafter referred to as a cleaning wafer) having an insulating film 51 formed on the upper surface is shown. As shown in FIG. 2A, the cleaning wafer CW can electrostatically adsorb negative particles 60a by charging the upper surface (the upper surface) positively. Further, as shown in FIG. 2B, the cleaning wafer CW can electrostatically adsorb positive particles 60b by charging the upper surface negatively. Note that, although the case where the insulating film 51 is formed on the upper surface of the cleaning wafer CW is shown as an example, the present invention is not limited thereto, and the insulating film 51 may be formed on the lower surface (the lower surface), the insulating film 51 may be formed on both the upper surface and the lower surface, or the insulating film 51 may be formed on the upper surface, the lower surface, and the side surface. Further, the charged member may have any configuration as long as the surface can be charged.

[0027] Figures 3A to 3F are diagrams showing an example of a charging method for charging a charged member according to an embodiment. FIGS. 3A to 3F show a charging method for charging a cleaning wafer CW as a charged member. In FIG. 3A, a positive or negative voltage is applied to the substrate of the cleaning wafer CW to charge the surface. In FIG. 3B, the cleaning wafer CW is irradiated with ions or electrons to charge the surface. In FIG. 3C, the cleaning wafer CW is irradiated with X-rays to charge the surface. In FIG. 3D, a gas is injected into the cleaning wafer CW, and the surface is charged by friction with the gas. In FIG. 3E, the surface of the cleaning wafer CW is charged by rubbing with an object 71. In FIG. 3F, a conductive film 52 is formed on the surface of the cleaning wafer CW, and a power supply 53 is provided. In FIG. 3F, a voltage is applied from the power supply 53 to the film 52 to charge the cleaning wafer CW. Note that, in FIG. 3F, the cleaning wafer CW may be charged by supplying power from a transport system such as the first transport mechanism 15 or the second transport mechanism 25.

[0028] The cleaning wafer CW may be charged outside the substrate processing system 1. For example, the charged cleaning wafer CW outside the substrate processing system 1 is stored in a FOUP and set on a load port LP. The substrate processing system 1 takes out the charged cleaning wafer CW from the FOUP, keeps or moves the charged cleaning wafer CW inside to collect particles. Then, the substrate processing system 1 returns the cleaning wafer CW with particles attached after dust collection to the FOUP to clean the inside of the substrate processing system 1.

[0029] Also, the cleaning wafer CW may be charged inside the substrate processing system 1. For example, a power supply unit for charging the cleaning wafer CW may be provided for the pick-up of the first arm 15a and the second arm 15b of the first transfer mechanism 15 of the substrate processing system 1, and the first pick-up 27a and the second pick-up 27b of the second transfer mechanism 25. Also, for example, a charging mechanism capable of charging the cleaning wafer CW by the charging method shown in FIGS. 3A to 3E may be provided inside the substrate processing system 1.

[0030] FIG. 4 is a diagram showing an example of the schematic configuration of the substrate processing system 1 according to the embodiment. FIG. 4 shows a case where a power supply unit 15a1 for charging the cleaning wafer CW is provided for the pick-up of the first arm 15a of the first transfer mechanism 15 installed in the vacuum transfer chamber 10. The cleaning wafer CW is provided with a conductive part such as a terminal at a part in contact with the power supply unit 15a1. The power supply unit 15a1 is supplied with power through the inside of the first arm 15a. The power supply unit 15a1 charges the cleaning wafer CW positively or negatively by applying a positive or negative voltage to the conductive part of the cleaning wafer CW.

[0031] FIG. 5 is a diagram showing an example of the schematic configuration of the substrate processing system 1 according to the embodiment. FIG. 5 shows a case where a charging mechanism 70 capable of charging the cleaning wafer CW is provided in the load lock module LLM. The charging mechanism 70 can charge the cleaning wafer CW by, for example, any of the charging methods shown in FIGS. 3A to 3E. Note that the charging mechanism 70 may be provided inside the vacuum transfer chamber 10, the atmospheric pressure transfer chamber 20, or the load port LP, or may be provided in the FOUP.

[0032] The substrate processing system 1 collects dust of particles by allowing the charged cleaning wafer CW to stay or move inside. FIG. 5 shows a case where the charged cleaning wafer CW is moved along the inner surface connected to the process module PM inside the vacuum transfer chamber 10. Thereby, particles invading from the process module PM can be collected by the charged cleaning wafer CW. The substrate processing system 1 may collect dust of particles by allowing a plurality of charged cleaning wafers CW to stay or move inside. For example, the substrate processing system 1 moves the charged cleaning wafer CW along the inner surface connected to the process module PM inside the vacuum transfer chamber 10 while the charged cleaning wafer CW is placed on the pick of the first arm 15a and the pick of the second arm 15b, respectively. Thereby, particles can be quickly collected by the plurality of charged cleaning wafers CW.

[0033] The movement path of the charged cleaning wafer CW can be any path, and it is preferable that the charged cleaning wafer CW covers the inside. Further, the substrate processing system 1 may circulate the charged cleaning wafer CW inside a plurality of times. Further, the substrate processing system 1 may move the charged cleaning wafer CW comprehensively covering the inside. Further, the substrate processing system 1 may move the charged cleaning wafer CW following the substrate W. For example, the substrate processing system 1 may circulate the charged cleaning wafer CW around the substrate W. FIGS. 6A and 6B are diagrams showing an example of the movement path of the cleaning wafer CW according to the embodiment. FIG. 6A shows a case where the charged cleaning wafer CW is circulated a plurality of times inside the vacuum transfer chamber 10. FIG. 6B shows a case where the charged cleaning wafer CW is circulated around the substrate W processed by the process module PM.

[0034] The substrate processing system 1 may maintain the charged cleaning wafer CW at any one of a plurality of internal positions for a first period. The first period is preferably 10 minutes or more. By stopping and maintaining the conveyance of the cleaning wafer CW, particles in the surroundings can be adsorbed onto the cleaning wafer CW by electrostatic force. For example, in the cases of FIGS. 5 and 6A, the conveyance may be temporarily stopped near the connection portion with each process module PM and maintained for the first period.

[0035] The cleaning wafer CW may be provided with charging regions that are charged positively and negatively, respectively, on the surface. Further, the cleaning wafer CW may be provided with a charging region that can be charged either positively or negatively on the surface. By providing the insulating film 51 on the side surface or the lower surface of the cleaning wafer CW and charging the surface, particles floating at the bottom or side of the conveyance system and particles adhering to the mounting portion for mounting the substrate W such as the stage ST can be efficiently collected.

[0036] FIG. 7A is a diagram showing an example of a charged member according to an embodiment. FIG. 7A shows a case where a positively charged region 54a and a negatively charged region 54b are provided on the upper surface of a cleaning wafer CW. By being positively charged, the charged region 54a can electrostatically adsorb negative particles 60a. By being negatively charged, the charged region 54b can electrostatically adsorb positive particles 60b. A plurality of charged regions 54a and 54b may be provided on the cleaning wafer CW.

[0037] FIG. 7B is a diagram showing an example of a charged member according to an embodiment. FIG. 7B shows a case where a positively charged region 54a is provided on the upper surface of a cleaning wafer CW and a negatively charged region 54b is provided on the lower surface of the cleaning wafer CW. The cleaning wafer CW shown in FIG. 7B electrostatically adsorbs negative particles 60a by the positively charged region 54a on the upper surface and electrostatically adsorbs positive particles 60b by the negatively charged region 54b on the lower surface. Note that the cleaning wafer CW may have a negatively charged region 54b provided on the upper surface and a positively charged region 54a provided on the lower surface.

[0038] The substrate processing system 1 may stay or move a cleaning wafer CW having surface charged regions charged positively and negatively inside to collect positive and negative particles at once. Also, the substrate processing system 1 may stay or move a cleaning wafer CW having a surface charged region charged positively and a cleaning wafer CW having a surface charged region charged negatively inside at the same time to collect positive and negative particles at once. Further, the substrate processing system 1 may stay or move a cleaning wafer CW having a surface charged region charged positively and a cleaning wafer CW having a surface charged region charged negatively inside individually to collect positive and negative particles individually.

[0039] Particles are charged by irradiation with ultraviolet rays or X-rays, or by corona discharge. Therefore, the substrate processing system 1 may actively charge the internal particles. For example, the substrate processing system 1 may be provided inside with a particle charging mechanism capable of charging particles by irradiating ultraviolet rays or X-rays, or by corona discharge.

[0040] FIG. 8 is a diagram showing an example of the schematic configuration of the substrate processing system 1 according to the embodiment. FIG. 8 shows a case where an irradiation unit 80 for irradiating ultraviolet rays is provided inside the vacuum transfer chamber 10 as a particle charging mechanism. The particles 60 are charged positively or negatively by the ultraviolet rays irradiated from the irradiation unit 80. In this way, by forcibly charging the particles 60, the electrostatic force by which the particles 60 are adsorbed to the cleaning wafer CW can be increased. As a result, a high dust collection effect can be obtained. Also, it becomes possible to clean a wide range in a short time. Note that the particle charging mechanism such as the irradiation unit 80 may be provided inside the atmospheric pressure transfer chamber 20, each process module PM, and the load port LP.

[0041] The cleaning wafer CW can be reused by removing the adsorbed particles. The cleaning wafer CW can remove the adsorbed particles by alternately applying positive and negative charges to act a repulsive force on the particles while performing gas blowing and vacuum exhaust. Also, the cleaning wafer CW can remove particles by heating or generating high-frequency plasma. The removal of particles from the cleaning wafer CW may be performed outside the substrate processing system 1 or inside the substrate processing system 1. For example, in the case of the configuration of FIG. 5, the substrate processing system 1 may remove particles from the cleaning wafer CW by alternately charging the cleaning wafer CW positively and negatively by the charging mechanism 70 and performing gas blowing and exhaust in the load lock module LLM.

[0042] (Particle Removal Method) FIG. 9 is a flowchart showing the flow of the particle removal method according to the embodiment. The processing of the particle removal method according to the embodiment is performed, for example, when a FOUP storing a cleaning wafer CW is set in a load port LP and a predetermined operation for instructing the control device 30 to remove particles is performed.

[0043] Charge at least one cleaning wafer CW (step S10). For example, the control device 30 controls a transfer system such as the first transfer mechanism 15 or the second transfer mechanism 25 to take out the cleaning wafer CW from the FOUP and transfer it to the charging mechanism 70. Then, the control device 30 controls the charging mechanism 70 to charge the cleaning wafer CW by the charging mechanism 70. Note that if the cleaning wafer CW charged outside the substrate processing system 1 is stored in the FOUP, the process of step S10 may not be performed.

[0044] Next, keep or move at least one charged cleaning wafer CW inside the substrate processing system 1 to collect particles (step S11). For example, the control device 30 controls a transfer system such as the first transfer mechanism 15 or the second transfer mechanism 25 to transfer the charged cleaning wafer CW into any one of the vacuum transfer chamber 10, the process module PM, the load lock module LLM, and the atmospheric pressure transfer chamber 20. Then, the control device 30 maintains the charged cleaning wafer CW at any one of a plurality of internal positions for a first period to collect particles.

[0045] Next, unload the cleaning wafer CW after dust collection into the FOUP (step S12) and end the process. For example, the control device 30 controls a transfer system such as the first transfer mechanism 15 or the second transfer mechanism 25 to transfer the cleaning wafer CW after dust collection into the FOUP.

[0046] As described above, the particle removal method according to the embodiment can actively collect particles by electrostatic force by transporting the charged cleaning wafer CW inside the substrate processing system 1. Thereby, the particle removal method according to the embodiment can efficiently remove particles.

[0047] An example of the effect of the particle removal technique of the embodiment will be described. FIG. 10A is a diagram showing an example of the particle removal result. FIG. 10A shows the result of evaluating the particle collection efficiency by charging an electrode plate simulating the cleaning wafer CW using test particles with known particle sizes. FIG. 10A shows the collection efficiencies of particles with particle sizes of 30 nm, 100 nm, and 200 nm. In the evaluation of FIG. 10A, particles were collected without providing a particle charging mechanism such as the irradiation unit 80. Many particles usually have either positive or negative charges without particularly active charge imparting. Therefore, even without active charging, 56% of the 30-nm particles can be collected, and a dust collection function is generated. Furthermore, the smaller the particle size, the more the electrostatic force exceeds the influence of the inertial force and gravity of the particles. For this reason, smaller particles can be dust-collected more efficiently. Therefore, the particle removal technique of the embodiment is a more effective cleaning technique in the future when particle miniaturization progresses.

[0048] FIG. 10B is a diagram showing another example of the particle removal result. FIG. 10B is the result of evaluating the particle collection efficiency by charging an electrode plate simulating the cleaning wafer CW using test particles with known particle sizes, similar to FIG. 10A. In the evaluation of FIG. 10B, particles were actively charged using corona discharge and then collected. When no active charging was performed, as shown in FIG. 10A, the collection efficiency of the 30-nm particles was 56%. On the other hand, when the particles were charged, as shown in FIG. 10B, the collection efficiency of the 30-nm particles improved to 89%, and almost all the particles near the electrode plate were collected.

[0049] From this result, it can be inferred that the substrate processing system 1 retains or moves the charged cleaning wafer CW inside, and the number of internal particles is greatly reduced.

[0050] When the cleaning wafer CW is charged by applying a voltage, the higher the applied voltage, the greater the charge amount, the higher the electrostatic force with the particles, and the better the particle collection efficiency.

[0051] FIGS. 11A and 11B are diagrams showing an example of changes in the particle collection efficiency when the applied voltage is changed. FIGS. 11A and 11B show the results of changing the applied voltage for charging the electrode plate simulating the cleaning wafer CW, and collecting test particles of known particle size with the electrode plates charged with the applied voltage. FIG. 11A shows the case where the applied voltage is changed within the positive range. FIG. 11A shows the case where the applied voltage is changed within the negative range. As shown in FIGS. 11A and 11B, for particle collection, an applied voltage of 500 V or more is required for both positive and negative voltages, and high collection efficiency can be obtained by setting it to 2000 V or more. Therefore, the cleaning wafer CW is preferably charged at ±500 V or more, and more preferably charged at ±2000 V or more.

[0052] When the substrate processing system 1 implements the processing of the particle removal method according to the embodiment, in order to enhance the cleaning effect, the peeling of particles from the inner wall may be promoted. For example, when transporting the cleaning wafer CW, the substrate processing system 1 can promote the peeling of particles from the inner wall by the opening and closing operation of the gate valve GV or the arm operation of the first transport mechanism 15 and the second transport mechanism 25. In addition, the substrate processing system 1 can also promote the peeling of particles from the inner wall by performing device operations such as gas introduction and exhaust and using the force of gas or vibration. Further, when the substrate processing system 1 promotes the peeling of particles, it is more effective to peel the particles with a stronger force by using a higher speed or a larger gas flow rate, etc., rather than the operation during normal substrate processing.

[0053] The particle removal method according to the embodiment is carried out at a timing when particle removal is necessary. For example, the particle removal method according to the embodiment is carried out during the manufacture of the substrate processing system 1, at startup, or at the startup after maintenance. For example, the particle removal method according to the embodiment is carried out after evacuation after the atmospheric opening of the vacuum transfer chamber 10. Further, the particle removal method according to the embodiment is appropriately carried out during the mass production operation of the apparatus. For example, the particle removal method according to the embodiment is carried out when there are many particles in the particle inspection using a product wafer or a dummy wafer. Thereby, the cleanliness inside the substrate processing system 1 can be maintained, and it becomes possible to shorten the startup time, reduce the number of maintenance times, and improve the yield.

[0054] (Effect of the embodiment) As described above, the substrate processing system 1 according to the embodiment includes a vacuum transfer chamber 10 (vacuum transfer module), a process module PM (substrate processing module), an atmospheric pressure transfer chamber 20 (atmospheric transfer module), a load lock module LLM, at least one substrate transfer robot (first transfer mechanism 15 and second transfer mechanism 25), and a control device 30 (control unit). The process module PM is connected to the vacuum transfer chamber 10 and is configured to process the substrate W in a reduced pressure environment. The load lock module LLM has an interior that can be switched between a reduced pressure environment and an atmospheric pressure environment, is connected to the vacuum transfer chamber 10 and the atmospheric pressure transfer chamber 20, and relays the substrate W between the vacuum transfer chamber 10 and the atmospheric pressure transfer chamber 20. At least one substrate transfer robot is disposed inside the vacuum transfer chamber 10 and the atmospheric pressure transfer chamber 20 and includes at least one end effector. The control device 30 is configured to control a particle removal operation. The particle removal operation includes a step of transporting at least one end effector inside any one of the vacuum transfer chamber 10, the process module PM, the load lock module LLM, and the atmospheric pressure transfer chamber 20 with at least one charged cleaning wafer CW (charged member) placed on the at least one end effector. Thereby, the substrate processing system 1 according to the embodiment can efficiently remove particles.

[0055] Also, the particle removal operation transports inside the vacuum transfer chamber 10. Thereby, the substrate processing system 1 can efficiently remove particles inside the vacuum transfer chamber 10.

[0056] The particle removal operation moves the charged cleaning wafer CW along the inner surface connected to the process module PM inside the vacuum transfer chamber 10 with the cleaning wafer CW placed on the pick of the first arm 15a and the pick of the second arm 15b of the first transfer mechanism 15, respectively. Thereby, the substrate processing system 1 according to the embodiment can quickly collect particles with a plurality of charged cleaning wafers CW.

[0057] During the particle removal operation, when moving the charged cleaning wafer CW along the inner surface connected to the process module PM inside the vacuum transfer chamber 10, the transfer is temporarily stopped and maintained for a first period near the connection point with the process module PM. The first period shall be 10 minutes or more. Thereby, the substrate processing system 1 can sufficiently adsorb the surrounding particles to the cleaning wafer CW by electrostatic force.

[0058] In addition, the substrate transfer robot (first transfer mechanism 15) has a power supply unit 15a1 (power supply unit) for charging the cleaning wafer CW on the end effector. During the particle removal operation, power is supplied from the power supply unit 15a1 to the cleaning wafer CW placed on the end effector to charge the cleaning wafer CW, and the end effector is transferred inside any one of the vacuum transfer chamber 10, the process module PM, the load lock module LLM, and the atmospheric pressure transfer chamber 20. Thereby, the substrate processing system 1 according to the embodiment can charge the cleaning wafer CW by the substrate transfer robot, and by transferring the charged cleaning wafer CW, particles can be efficiently removed.

[0059] In addition, the substrate processing system 1 according to the embodiment further includes a charging mechanism 70 for charging the cleaning wafer CW. During the particle removal operation, the charging mechanism 70 charges the cleaning wafer CW, and with the charged cleaning wafer CW placed on the end effector, the end effector is transferred inside any one of the vacuum transfer chamber 10, the process module PM, the load lock module, and the atmospheric pressure transfer chamber 20. Also, the charging mechanism 70 is provided in any one of the vacuum transfer chamber 10, the load lock module, and the atmospheric pressure transfer chamber 20. Thereby, the substrate processing system 1 according to the embodiment can charge the cleaning wafer CW by the charging mechanism 70, and by transferring the charged cleaning wafer CW, particles can be efficiently removed.

[0060] Further, the cleaning wafer CW has charging regions 54a and 54b that are charged positively and negatively, respectively, on its surface. The particle removal operation conveys the cleaning wafer CW in which the charging regions 54a and 54b are charged positively and negatively, respectively. Thereby, the substrate processing system 1 can collect positive and negative particles at once.

[0061] Also, the cleaning wafer CW has a charging region on its surface that can be charged either positively or negatively. The particle removal operation individually conveys the cleaning wafer CW in which the charging region is charged positively and negatively, respectively. Thereby, the substrate processing system 1 can individually collect positive and negative particles with the cleaning wafer CW charged positively and negatively, respectively.

[0062] Further, the substrate processing system 1 according to the embodiment further includes a particle charging mechanism (irradiation unit 80) that charges particles inside any one of the process module PM, the load lock module, and the atmospheric pressure transfer chamber 20. Thereby, the substrate processing system 1 can improve the collection efficiency of particles. Also, the substrate processing system 1 can efficiently collect particles with a large particle size.

[0063] Further, the substrate processing system 1 according to the embodiment further includes a particle removal mechanism that removes particles attached to the cleaning wafer CW. Thereby, the substrate processing system 1 can make the cleaning wafer CW reusable in its own device.

[0064] As described above, the embodiments have been described. However, the embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. Indeed, the above-described embodiments can be embodied in various forms. Also, the above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope and spirit of the claims.

[0065] For example, in the above embodiment, the case where the substrate W is a semiconductor wafer has been described as an example, but it is not limited thereto. The substrate may be any substrate.

[0066] It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. Indeed, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

Explanation of Reference Numerals

[0067] 1 Substrate processing system 10 Vacuum transfer chamber 15 First transfer mechanism 15a First arm 15a1 Power supply unit 15b Second arm 20 Atmospheric pressure transfer chamber 25 Second transfer mechanism 25a Arm 25d Base 27a First pick 27b Second pick 30 Control device 31 Storage unit 32 Processing unit 33 Input / output interface 34 Display unit 51 Insulating film 53 Power supply 54a, 54b Charged regions 60, 60a, 60b Particles 70 Charging mechanism 71 Object 80 Irradiation unit CW Cleaning wafer GV Gate valve LLM, LLM1, LLM2 Load lock module LP, LP1~LP5 Load port PM, PM1~PM8 Process module ST Stage W Substrate

Claims

1. A vacuum transfer module, a plurality of substrate processing modules respectively connected along the side surface of the vacuum transfer module and configured to process a substrate in a reduced-pressure environment, at least one transfer robot disposed inside the vacuum transfer module and including at least one end effector, and a control unit, wherein the control unit has a step of controlling the transfer robot to move the at least one end effector along the inner side surface connected to the substrate processing module inside the vacuum transfer module with at least one charged member placed on the at least one end effector. A substrate processing system.

2. The at least one end effector has a first end effector and a second end effector, and the control unit controls the transfer robot to move the first end effector and the second end effector along the inner side surface connected to the substrate processing module inside the vacuum transfer module with the charged member placed on the first end effector and the second end effector respectively. The substrate processing system according to Claim 1.

3. When the control unit controls the transfer robot to move the charged member along the inner side surface connected to the substrate processing module inside the vacuum transfer module, the control unit temporarily stops the transfer near the connection point with the substrate processing module and maintains it for a first period. The substrate processing system according to Claim 1 or 2.

4. The first period is 10 minutes or more. The substrate processing system according to Claim 3.

5. The transfer robot has a power supply unit for charging the charged member on the end effector, and the control unit controls the transfer robot to supply power from the power supply unit to the charged member placed on the end effector to charge and transfer the charged member. The substrate processing system according to any one of Claims 1 to 4.

6. The substrate processing system further includes a charging mechanism for charging the charged member, and the control unit controls the transfer robot to transfer the charged member charged by the charging mechanism while placed on the end effector. The substrate processing system according to any one of Claims 1 to 4.

7. An atmospheric transfer module, The interior is capable of switching between a reduced-pressure environment and an atmospheric-pressure environment, and further includes a load lock module connected to the vacuum transfer module and the atmospheric transfer module, for relaying the substrate between the vacuum transfer module and the atmospheric transfer module. The charging mechanism is provided in any one of the vacuum transfer module, the load lock module, and the atmospheric transfer module. The substrate processing system according to claim 6.

8. The charging member is provided on its surface with charging regions that are charged positively and negatively, respectively. The control unit conveys the charging member in which the charging regions are charged positively and negatively, respectively. The substrate processing system according to any one of claims 1 to 7.

9. The charging member is provided on its surface with a charging region that can be charged either positively or negatively. The control unit controls the transfer robot to individually convey the charging member in which the charging region is charged positively and negatively, respectively. The substrate processing system according to any one of claims 1 to 7.

10. An atmospheric transfer module, The interior is capable of switching between a reduced-pressure environment and an atmospheric-pressure environment, and further includes a load lock module connected to the vacuum transfer module and the atmospheric transfer module, for relaying the substrate between the vacuum transfer module and the atmospheric transfer module. Further includes a particle charging mechanism for charging particles inside any one of the substrate processing module, the load lock module, and the atmospheric transfer module. The substrate processing system according to any one of claims 1 to 6.

11. Further includes a particle removing mechanism for removing particles attached to the charging member. The substrate processing system according to any one of claims 1 to 10.

12. A vacuum transfer module, A plurality of substrate processing modules respectively connected along the side surface of the vacuum transfer module and configured to process substrates in a reduced-pressure environment. At least one transfer robot disposed inside the vacuum transfer module and including at least one end effector. A particle removal method for a substrate processing system including: A step of controlling the transfer robot to move the at least one end effector along an inner surface connected to the substrate processing module inside the vacuum transfer module with at least one charged member charged and placed on the at least one end effector A particle removal method having the above.

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