Substrate Processing System and Substrate Processing Method

Abstract

The purpose of the present invention is to reduce the necessary amount of cleaning air to be taken in by a supply device when the supply device supplies an atmospheric gas to a substrate treatment system.　A substrate treatment system (1) connected to an exposure device (30) comprises: a substrate treatment device (10) that treats a substrate; and a supply device (20) that supplies an atmospheric gas for substrate treatment to the substrate treatment device (10). The supply device (20) has a take-in unit (21) that takes in an exhaust gas discharged from the exposure device. The supply device (20) is configured to adjust the temperature and / or the humidity of the exhaust gas taken in by the take-in unit (21) and then supply the adjusted gas as the atmospheric gas to the substrate treatment device (10).

Description

Technical Field

[0001] The present disclosure relates to a substrate processing system and a substrate processing method.

Background Art

[0002] Patent Document 1 describes a substrate processing apparatus having a plurality of processing units for processing a substrate, the apparatus having a plurality of ducts for supplying air to the processing units, each duct having a connecting pipe connecting the duct to an air supply source, and an air conditioner supplying clean air to the processing units.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the present disclosure, when supplying an atmosphere gas to a substrate processing system by a supply device, the necessary amount of clean air taken in by the supply device is reduced.

Means for Solving the Problems

[0005] The present disclosure is a substrate processing system connected to an exposure device, a substrate processing apparatus that processes a substrate, and a supply device that supplies an atmosphere gas during substrate processing to the substrate processing apparatus, wherein the supply device has a intake unit that takes in exhaust gas discharged from the exposure device, and the supply device adjusts the temperature and / or humidity of the exhaust gas taken in from the intake unit and then supplies it to the substrate processing apparatus as the atmosphere gas.

Effects of the Invention

[0006] According to the present disclosure, when supplying an atmospheric gas to a substrate processing system by a supply device, the required amount of clean air taken in by the supply device is reduced.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Modes for Carrying Out the Invention

[0008] In a manufacturing process of a semiconductor device or the like, a resist solution is supplied onto a semiconductor wafer (hereinafter sometimes referred to as a "wafer") as a substrate to form a resist film, and then a pattern is formed on the resist film by an exposure apparatus. Next, a series of photolithography processes are performed by developing the resist film.

[0009] The formation and development processing of the resist film are respectively performed in a resist coating apparatus and a developing apparatus. These apparatuses that perform necessary processing other than the exposure processing, together with a heat treatment apparatus and the like, are mounted on a coating / developing processing apparatus. The coating / developing processing apparatus and the exposure apparatus are connected and used.

[0010] Here, for the resist coating apparatus and the developing apparatus, the temperature and humidity environment for performing the coating process and the developing process are strictly defined. Therefore, instead of supplying the atmosphere in the clean room as it is to these apparatuses, for example, it is separately supplied from a supply apparatus provided in the space below the floor surface where the coating and developing processing apparatus is installed, usually the space below the floor composed of grating, that is, the underfloor space. This supply apparatus takes in the atmosphere in the underfloor space derived from the clean atmosphere in the clean room, adjusts the temperature and humidity, and then supplies it to the resist coating apparatus and the developing apparatus as atmospheric gas.

[0011] On the other hand, for the exposure apparatus, although it is installed connected to the coating and developing processing apparatus, clean air from another supply apparatus equipped with a temperature and humidity adjustment function dedicated to the exposure apparatus is supplied into the exposure apparatus. This supply apparatus dedicated to the exposure apparatus is also usually installed in the underfloor space, takes in the atmosphere in the underfloor space derived from the clean atmosphere in the clean room, adjusts the temperature and humidity, and then supplies it to the exposure apparatus as atmospheric gas.

[0012] And for both the coating and developing processing apparatus and the exposure apparatus, their exhaust gases are independently discharged outside the clean room.

[0013] The source gas of the atmospheric gas supplied by each supply apparatus is the atmosphere in the underfloor space derived from the atmosphere in the clean room. And the atmosphere in the clean room has its temperature and humidity adjusted and is highly purified by a high-performance filter. Therefore, it is preferable both in terms of energy saving and cost to suppress its consumption as much as possible, and the life of the high-performance filter can be extended.

[0014] In view of such a point, the present disclosure reduces the required amount of clean air, such as the underfloor space, taken in by the supply apparatus when supplying atmospheric gas to the substrate processing system.

[0015] Hereinafter, the configuration of the substrate processing system according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions are omitted.

[0016] FIG. 1 schematically shows an overview of a substrate processing system 1 according to a first embodiment. The substrate processing system 1 includes a coating / developing processing apparatus 10 as a substrate processing apparatus and a supply apparatus 20. An exposure apparatus 30 is connected to the coating / developing processing apparatus 10. The connection between the coating / developing processing apparatus 10 and the exposure apparatus 30 may be a direct connection as shown in the figure, or may be connected via an interface unit that conveys and waits for a wafer between the coating / developing processing apparatus 10 and the exposure apparatus 30.

[0017] The coating / developing processing apparatus 10 and the exposure apparatus 30 are installed on the upper surface of the floor 2 in the clean room CR. The supply apparatus 20 is installed in the underfloor space UR, which is the space below the floor 2. The floor 2 is made of a breathable floor material commonly called normal grating. Therefore, the atmosphere in the underfloor space UR is the atmosphere derived from the clean room CR. From this, the atmosphere in the installation area in the present disclosure includes not only the atmosphere in the clean room CR where the coating / developing processing apparatus 10 and the exposure apparatus 30 are installed, but also the atmosphere in the underfloor space UR of the floor 2 where the coating / developing processing apparatus 10 and the exposure apparatus 30 are installed.

[0018] The supply apparatus 20 has a intake section 21 for taking in the exhaust gas discharged from the exposure apparatus 30. In the illustrated example, a duct 3 is provided between the intake section 21 and the exposure apparatus 30, and the exhaust gas discharged from an exhaust section (not shown) of the exposure apparatus 30 flows through the duct 3 and into the intake section 21. Also in the illustrated example, a removal section 4 for removing foreign substances and / or chemical substances contained in the exhaust gas from the exposure apparatus 30 is provided prior to the intake into the intake section 21. The removal section 4 is composed of, for example, a filter. Note that the duct 3 may be a closed flow path that allows gas to flow through without leakage, and may be, for example, a pipe or a tube.

[0019] The supply device 20 adjusts the temperature and humidity of the exhaust gas taken in from the intake unit 21 and supplies it as ambient gas to the coating development processing device 10. The supply device 20 is, for example, an air conditioner. The supply device 20 has, for example, a cooling unit 23, a heating unit 24, and a humidifying unit 25 in the flow path in the casing 22 in order from upstream. The cooling unit 23 is constituted by, for example, a cooling coil. The cooling unit 23 has a function of cooling the gas taken in from the intake unit 21 to a temperature below the dew point temperature and dehumidifying it with, for example, cold water or refrigerant supplied from the cooling device 26.

[0020] The cooling device 26 includes various devices that realize a refrigeration cycle composed of, for example, a compressor, an expansion valve, etc. For example, it may have a heat pump configuration. And the illustrated cooling device 26 has a configuration in which the refrigerant heated in the refrigeration cycle is cooled by cooling water (for example, 15°C to 25°C) supplied from the outside. Therefore, the cooling water coming out of the cooling device 26 is heated (for example, 25°C to 35°C). Of course, the cooling device 26 is not limited to such a configuration.

[0021] Examples of the heating unit 24 include a heater that functions as a so-called reheater and generates heat by supplying electric power, and a heating coil that is heated by supplying hot water.

[0022] As the humidifying unit 25, for example, a humidifier configured to spray water or supply steam can be adopted.

[0023] By the cooling unit 23, heating unit 24, and humidifying unit 25 listed above, the gas taken in from the intake unit 21 is first dehumidified by the cooling unit 23, then heated to a desired temperature by the heating unit 24, and then humidified to a desired humidity by the humidifying unit 25. And the gas after being adjusted to the desired temperature and humidity in this way is supplied as ambient gas to the coating development processing device 10 by the fan 27, for example, through the duct 6.

[0024] The control of the cooling unit 23, heating unit 24, and humidifying unit 25 may be controlled by the control device C based on, for example, the detected values of the temperature and humidity sensors 28 provided in the duct 6. Note that the supply device 20 can perform adjustment of only the temperature, only the humidity, or both.

[0025] The coating and developing processing apparatus 10 has, for example, the configuration shown in FIG. 2, and a plurality of so-called liquid processing type processing apparatuses 11, such as a resist coating apparatus and a developing processing apparatus, are mounted in multiple stages. Then, the atmosphere gas whose temperature and humidity have been adjusted by the supply device 20 is supplied to the ceiling portions of each stage through the main ducts 12 and 13 provided in the apparatus via the ducts 6a and 6b branched from the duct 6, for example. The atmosphere gas supplied to the ceiling portion of each stage is individually supplied into each processing apparatus 11. The temperature and humidity of the atmosphere gas are generally, for example, 23°C and 45%RH, but the suitable temperature and humidity are not limited to this depending on the type of the processing apparatus 11 at the supply destination and the content of the processing.

[0026] Note that in addition to the liquid processing type processing apparatus 11, the coating and developing processing apparatus 10 is equipped with a plurality of other apparatuses such as a heat treatment apparatus for heating the wafer after resist coating and a heat treatment apparatus for heating the wafer after exposure.

[0027] The substrate processing system 1 according to the embodiment has the above configuration. According to this substrate processing system 1, the supply device 20 takes in the exhaust gas from the exposure apparatus 30 that has been conventionally discharged as exhaust directly outside the clean room CR, adjusts at least the temperature or humidity, and then supplies it as the atmosphere gas to the coating and developing processing apparatus 10. Therefore, the exhaust gas from the exposure apparatus 30 that has been conventionally discharged directly outside the clean room CR can be effectively reused. As a result, the consumption amount of the atmosphere in the underfloor space UR derived from the clean room CR can be reduced as compared with the conventional case. Therefore, the energy required for generating the clean air supplied into the clean room CR can be saved, and the life of the filter during purification can be extended. Also, when the temperature or humidity of the exhaust gas from the exposure apparatus 30 is less of a load than adjusting the temperature or humidity of the atmosphere in the underfloor space UR, it is also possible to reduce the energy required for the operation of the supply apparatus 20.

[0028] Incidentally, the exhaust gas from the exposure apparatus 30 may contain particles and chemical substances in some cases. According to the substrate processing system 1 according to the above embodiment, since the removing unit 4 for removing foreign substances and / or chemical substances contained in the exhaust gas is provided in the duct 3, these particles and chemical substances can be removed prior to the intake of the exhaust gas into the intake unit 21. Therefore, even if the exhaust gas from the exposure apparatus 30 contains particles and chemical substances, the supply apparatus 20 can suitably adjust the temperature and humidity to generate the atmosphere gas.

[0029] In the above embodiment, all of the source gas taken in from the intake unit 21 was the exhaust gas from the exposure apparatus 30, but it cannot be denied that the temperature and humidity of the exhaust gas may exceed the controllable range of the temperature and humidity adjustment in the supply apparatus 20. The substrate processing system 1 according to the second embodiment shown in FIG. 3 shows a configuration capable of coping with such a case.

[0030] First, the intake unit 21 has a first intake unit 21a and a second intake unit 21b. A damper D1 capable of adjusting the flow rate of the gas to be taken in is provided in the first intake unit 21a. A damper D2 capable of adjusting the flow rate of the gas to be taken in is provided in the second intake unit 21b. The first intake unit 21a is connected to a duct 3 for taking in the exhaust gas from the exposure apparatus 30. On the other hand, the second intake unit 21b is configured to take in the atmosphere of the underfloor space UR.

[0031] If it has such a configuration, as the raw material gas taken in by the supply device 20, a mixed gas of the exhaust gas from the exposure device 30 and the atmosphere in the underfloor space UR can be introduced. Therefore, when relying only on the exhaust gas from the exposure device 30 as the raw material gas taken in by the supply device 20 and when exceeding the controllable range of temperature and humidity adjustment in the supply device 20, the opening degrees of the damper D1 of the first intake part 21a and the damper D2 of the second intake part 21b may be adjusted so that the atmosphere in the underfloor space UR is mixed with the exhaust gas from the exposure device 30. Thereby, it is possible to adjust the raw material gas so as to fall within the controllable range of temperature and humidity adjustment in the supply device 20.

[0032] Also, if simply mixing the atmosphere in the underfloor space UR with the exhaust gas from the exposure device 30 still results in the raw material gas taken in by the supply device 20 not falling within the controllable range of temperature and humidity adjustment in the supply device 20, the damper D1 of the first intake part 21a may be closed to take in only the atmosphere in the underfloor space UR. Of course, when taking in only the exhaust gas from the exposure device 30 also falls within the controllable range of temperature and humidity adjustment in the supply device 20, the damper D2 of the second intake part 21b may be closed to take in only the exhaust gas from the exposure device 30.

[0033] Such adjustment of the opening degrees of the damper D1 of the first intake part 21a and the damper D2 of the second intake part 21b may be carried out in the initial setting at the time of startup of the substrate processing system 1 and the exposure device 30.

[0034] In such a case, as shown in FIG. 3, a temperature and humidity sensor 7 may be provided in the duct 3 to measure the temperature and humidity of the exhaust gas from the exposure apparatus 30, and based on the measured values, the control device C may adjust the opening degrees of the dampers D1 and D2. Thereby, the mixing ratio of the exhaust gas taken in from the first intake portion 21a and the atmosphere taken in from the second intake portion 21b can be changed. Further, based on the measured values of the temperature and humidity sensor 7, either the exhaust gas taken in from the first intake portion 21a or the atmosphere taken in from the second intake portion 21b may be selectively taken in. Such adjustment of the opening degrees of the dampers D1 and D2 may be carried out sequentially or continuously not only at the time of startup of the substrate processing system 1 and the exposure apparatus 30 but also during the operation of the substrate processing system 1 and the exposure apparatus 30.

[0035] By the way, as in the example shown in FIG. 3, when measuring the temperature and humidity of the exhaust gas from the exposure apparatus 30 and adjusting the opening degrees of the dampers D1 and D2 based on the measured values, if the damper D1 of the first intake portion 21a is throttled too much, when the flow rate of the exhaust gas discharged from the exposure apparatus 30 becomes excessively small, there is a possibility that the inside of the exposure apparatus 30 may have insufficient exhaust heat.

[0036] In such a case, as shown in FIG. 4, a temperature sensor 31 may be provided in a predetermined region inside the exposure apparatus 30, that is, a region where there is a possibility of insufficient exhaust heat when the flow rate of the exhaust gas becomes excessively small, and based on the temperature signal from this temperature sensor 31, the control device C may control the closing limit (throttling degree) of the damper D1 of the first intake portion 21a. Thereby, the intake amount of the exhaust gas from the exposure apparatus 30 can be made appropriate.

[0037] If the damper D1 of the first intake section 21a is not throttled beyond its closing limit, and the temperature and humidity control in the supply device 20 cannot be kept within the controllable range, then in order to separately provide an exhaust route for the exhaust gas from the exposure device 30, for example, as shown in FIG. 4, a branch duct 3a may be provided in the duct 3, and the exhaust gas may be discharged from the branch duct 3a. At this time, if a damper D3 with an adjustable opening degree is provided in the branch duct 3a, it will be possible to respond flexibly.

[0038] Note that the control device C described above is, for example, a computer equipped with a CPU, a memory, etc., and has a program storage section (not shown). In this program storage section, programs for controlling the temperature and humidity adjustment in the supply device 20 described above, and the opening, closing, and opening degree adjustment of the dampers D1 to D3 are stored. Of course, this control device C may be shared with a control device that controls various processing devices and conveying means mounted on the substrate processing system 1, and a control device that controls various processes of the exposure device 30. And the above program may be recorded on a computer-readable storage medium, and may be installed in the control device C via the storage medium or the Internet. Also, part or all of the above program may be realized by dedicated hardware (circuit board).

[0039] As described above, the embodiments have been described with reference to the drawings, but the present disclosure is not limited to the illustrated embodiments. Various changes can be made to the illustrated embodiments within the same scope or an equivalent scope of the present disclosure.

Description of Reference Numerals

[0040] 1 Substrate processing system 10 Coating and developing processing device 20 Supply device 21 Intake section 30 Exposure device

Claims

1. A substrate processing system connected to an exposure apparatus, comprising: a substrate processing apparatus for processing a substrate; and a supply apparatus for supplying an atmosphere gas for substrate processing to the substrate processing apparatus, wherein the supply apparatus has a taking-in unit for taking in exhaust gas discharged from the exposure apparatus, and the supply apparatus supplies the exhaust gas taken in from the taking-in unit to the substrate processing apparatus as the atmosphere gas after adjusting the temperature and / or humidity of the exhaust gas.

2. The substrate processing system according to claim 1, further comprising a duct connecting the taking-in unit and the exposure apparatus.

3. The substrate processing system according to any one of claims 1 or 2, further comprising a removing unit for removing foreign substances and / or chemical substances contained in the exhaust gas prior to taking in the exhaust gas into the taking-in unit.

4. The taking-in unit has a first taking-in unit for taking in exhaust gas from the exposure apparatus and a second taking-in unit for taking in the atmosphere of the installation area of the substrate processing system, and the supply apparatus takes in either the exhaust gas from the first taking-in unit or the atmosphere of the installation area from the second taking-in unit, adjusts the temperature and / or humidity, and then supplies it to the substrate processing apparatus as the atmosphere gas.

5. Based on the temperature and / or humidity of the exhaust gas from the exposure apparatus, the supply apparatus takes in either the exhaust gas from the first taking-in unit or the atmosphere of the installation area from the second taking-in unit, adjusts the temperature and / or humidity, and then supplies it to the substrate processing apparatus as the atmosphere gas.

6. The taking-in unit has a first taking-in unit for taking in exhaust gas from the exposure apparatus and a second taking-in unit for taking in the atmosphere of the installation area of the substrate processing system, and the supply apparatus mixes the exhaust gas from the first taking-in unit and the atmosphere of the installation area from the second taking-in unit, adjusts the temperature and / or humidity, and then supplies it to the substrate processing apparatus as the atmosphere gas.

7. The mixing ratio of the exhaust gas from the first taking-in unit and the atmosphere of the installation area from the second taking-in unit is variable.

8. The substrate processing system according to claim 7, wherein the mixing ratio is determined based on the temperature and / or humidity of the exhaust gas from the exposure apparatus.

9. The substrate processing system according to any one of claims 1 to 8, wherein the intake amount of the exhaust gas discharged from the exposure apparatus is adjusted based on the temperature inside the exposure apparatus.

10. A substrate processing method using a substrate processing system connected to an exposure apparatus, A substrate processing method, in which after adjusting the temperature and / or humidity of the exhaust gas discharged from the exposure apparatus, the exhaust gas is supplied as an ambient gas to a substrate processing apparatus of the substrate processing system.

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