Magnetron sputtering apparatus

Abstract

To provide a magnetron sputtering apparatus capable of reducing the occurrence of local abnormal discharge inside a target electrode. 【Solution means】Each magnetron sputtering apparatus includes a target that emits particles to be deposited, which is housed inside a chamber; a magnet installed on the back side of the target; a high-voltage application unit that applies a high voltage to the target; a case (holding member) that houses the target, the magnet, and the high-voltage application unit such that the surface of the target is exposed to form a target electrode; an insulating plate in which a plurality of plate materials are arranged with a gap communicating with the inside of the chamber provided between the bottom surface and side surfaces of the magnet and the case; and a workpiece installed at a position facing the target, which is formed by particles ejected from the surface of the target when an inert gas supplied into the chamber is ionized and collided with the surface of the target.

Description

Technical Field

[0001] The present invention relates to a magnetron sputtering apparatus for forming a film on a material to be processed such as resin or glass.

Background Art

[0002] In a film forming apparatus using the magnetron sputtering method, an electrode provided with a sputtering target (hereinafter simply referred to as a target) is used (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Inside the target electrode of the magnetron sputtering apparatus, a plurality of components are densely arranged. Although the components are fastened with bolts, even if the components are completely adhered to each other, voids are always generated. When magnetron sputtering is performed, air (gas) flows into the voids, resulting in gas accumulation. Since the gas in the gas accumulation is difficult to exhaust, it takes time to exhaust, and in some cases, it causes local abnormal discharge. When abnormal discharge occurs inside the target electrode, the insulator case is carbonized, and the insulation function is lost in this area. Therefore, it is necessary to remove all the carbonized parts. Since it takes time to recover such a device, the production of products is stopped during that time, resulting in a problem of reduced productivity.

[0005] The present invention has been made in view of the above, and an object thereof is to provide a magnetron sputtering apparatus capable of reducing the occurrence of local abnormal discharge inside the target electrode.

Means for Solving the Problems

[0006] In order to solve the above-described problems and achieve the object, the magnetron sputtering apparatus according to the present invention includes a target that emits particles to be deposited, which is housed inside a chamber, a magnet installed facing the back surface side of the target, and Through the magnet case that houses the magnet and the magnet, a high-voltage application unit that applies a high voltage to the target, and the target and the magnet the magnet case and a holding member that houses the high-voltage application unit so that the surface of the target is exposed to form a target electrode, and the bottom surface and side surfaces of the magnet and the holding member the inner wall of a plurality of plate materials are arranged between them, across the bottom surface of the magnet and through the side surface of the magnet, an insulating plate arranged with a gap communicating with the inside of the chamber, and an inert gas supplied into the chamber is ionized by the high voltage generated by the high-voltage application unit and collides with the surface of the target by the attracting force of the magnetic field of the magnet. A workpiece to be processed is installed at a position facing the target, which is formed into a film by the particles knocked out from the surface of the target, and the gap forms an exhaust flow path for residual air (gas). is characterized by this.

Effect of the Invention

[0007] The magnetron sputtering apparatus according to the present invention has an effect of being able to reduce the occurrence of local abnormal discharge inside the target electrode.

Brief Description of the Drawings

[0008]

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MODE FOR CARRYING OUT THE INVENTION

[0009] Hereinafter, embodiments of the surface treatment apparatus according to the present disclosure will be described in detail with reference to the drawings. Note that the present invention is not limited by this embodiment. In addition, the components in the following embodiments include those that can be replaced by those skilled in the art and can be easily conceived, or those that are substantially the same.

[0010] (Schematic Configuration of Magnetron Sputtering Apparatus) Using FIG. 1, the schematic configuration of the magnetron sputtering apparatus 10, which is an embodiment of the present disclosure, will be described. FIG. 1 is a diagram showing an example of the schematic configuration of the magnetron sputtering apparatus.

[0011] The magnetron sputtering apparatus 10 forms a thin film of target particles 18 on the surface of the workpiece 14 by depositing the target particles 18 emitted from the target 20 installed at a position facing the workpiece 14 on the surface of the workpiece 14 installed inside the chamber 12 in a vacuum state.

[0012] In the magnetron sputtering apparatus 10, the material to be processed 14 is, for example, a glass substrate, a silicon (Si) wafer, or the like. The material to be processed 14 is held by the positive electrode 13.

[0013] The target 20 contains elements such as copper and aluminum that serve as materials for the thin film. A magnet 22 is installed on the back side of the surface of the target 20 facing the material to be processed 14. The magnet 22 is held on the back side of the target 20 while being housed in the magnet case 23. The magnet case 23 is formed of, for example, copper (Cu).

[0014] The target 20 and the magnet case 23 are housed in the case 40 via the insulating plate 30. The insulating plate 30 is, for example, Teflon (registered trademark) or the like. The insulating plate 30 is composed of a plurality of plate-shaped plates of the same thickness arranged with gaps between them. The arrangement structure of the insulating plate 30 will be described in detail later (see FIGS. 7 and 8).

[0015] The target 20, the magnet 22, the magnet case 23, the insulating plate 30, and the case 40 described above constitute the target electrode 50.

[0016] The case 40 holds the periphery of the target 20 via the insulating plate 30 and forms a ground potential (ground voltage). The case 40 is formed of, for example, an aluminum alloy or stainless steel (SUS). Since the magnet 22 is installed near the case 40, the case 40 is made of a non-magnetic material that is not affected by the magnet 22. Note that the case 40 is an example of the holding member in the present disclosure. The connection structure among the target 20, the insulating plate 30, and the case 40 will be described in detail later (see FIGS. 3 and 4).

[0017] A DC power supply 15 that applies a high voltage of about minus 700 volts, for example, is connected to the side of the target 20 between the grounded positive electrode 13 and the target 20 held in an insulated state by the grounded case 40.

[0018] Inside the chamber 12 in a vacuum state, an inert gas (e.g., argon gas) is supplied through the gas supply path 16. The supplied inert gas is excited by the plasma generated by the high voltage applied between the positive electrode 13 and the target electrode 50 to become argon ions.

[0019] At this time, the magnet 22 installed on the back side of the target 20 generates a magnetic field in a direction orthogonal to the electric field in the vicinity of the electrode on the case 40 side. The generated magnetic field attracts electrons in the plasma, so a space with a high electron density is formed in the vicinity of the target 20. Since argon collides with the space with a high electron density formed in this way, the ionization of argon is further promoted. Then, the generated argon ions collide with the surface of the target 20, and so-called sputtering occurs, which knocks out the target particles 18 (atoms and molecules) forming the target 20.

[0020] The target particles 18 knocked out by sputtering reach the surface of the workpiece 14 on the positive electrode 13 side, and a thin film of the target particles 18 is formed on the surface of the workpiece 14.

[0021] After the formation of the thin film is completed, the magnetron sputtering apparatus 10 opens the exhaust path 17 to discharge the residual gas inside the chamber 12 and returns the inside of the chamber 12 to atmospheric pressure.

[0022] Note that between the gas supply path 16 and the chamber 12, and between the exhaust path 17 and the chamber 12, there are installed openable and closable valves and shutters (not shown). First, the magnetron sputtering apparatus 10 closes the gas supply path 16, opens the exhaust path 17, and evacuates the inside of the chamber 12. Then, both the gas supply path 16 and the exhaust path 17 are opened, and for example, argon gas is supplied into the chamber 12. And even during the sputtering of the workpiece 14, both the gas supply path 16 and the exhaust path 17 are opened to maintain the supply of argon gas. When the sputtering of the workpiece 14 is completed, the gas supply path 16 is closed, the exhaust path 17 is opened, and the residual gas inside the chamber 12 is discharged. And after discharging the residual gas, the gas supply path 16 is opened, the exhaust path 17 is closed, air is introduced into the chamber 12, and the inside of the chamber 12 is returned to atmospheric pressure.

[0023] (Schematic structure of the target electrode) Using FIG. 2, the schematic structure of the target electrode 50 included in the magnetron sputtering apparatus 10 of the embodiment will be described. FIG. 2 is a cross-sectional view showing an example of the schematic structure of the target electrode included in the magnetron sputtering apparatus of the embodiment.

[0024] A high voltage of about minus 700 volts, for example, is applied to the magnet 22 from a high voltage application unit 31 provided at the bottom of the target electrode 50.

[0025] Inside the magnet case 23, a cooling water path 32 for supplying cooling water from the bottom of the target electrode 50 and a cooling water path 33 for discharging cooling water from the bottom of the target electrode 50 communicate with each other.

[0026] The insulating plate 30 that holds the magnet case 23 inside the case 40 is composed of a plurality of plate-shaped plates of the same thickness, and each plate is arranged with a gap between them. The arrangement structure of the insulating plate 30 will be described in detail later (see FIGS. 7 and 8).

[0027] (Connection structure of each part in the target electrode) Using FIGS. 3 and 4, the connection structure of each part in the target electrode 50 will be described. FIG. 3 is a partial cross-sectional view showing an example of the structure of the target electrode. FIG. 4 is a cross-sectional view showing an example of the structure of the bolt used for fastening each part in the target electrode.

[0028] As shown in FIG. 3, the case 40 and the insulating plate 30 are fastened with bolts 24a.

[0029] The target 20 is attached to the case 40 via a magnet case 23 that houses the magnet 22. More specifically, the target 20 is fastened to the magnet case 23 with bolts 24b. Also, the magnet case 23 is fastened to the case 40 with bolts 24c.

[0030] Also, the insulating plate 30 at the bottom of the magnet case 23 is fastened to the case 40 with bolts 24d.

[0031] The bolts 24a, 24d for fastening the insulating plate 30 and the case 40, and the bolt 24c for fastening the magnet case 23 and the case 40 are all made of a high-performance thermoplastic resin called PEEK (Poly Ether Ether Ketone) to prevent energization. Also, as shown in FIG. 4, the bolt 24a is provided with a through hole 25 so as to discharge the air (gas) accumulated in the air reservoir 26 formed at the bottom of the bolt hole. The bolts 24b, 24c, 24d also have through holes 25 similar to the bolt 24a.

[0032] (Appearance Structure of Target Electrode) Using FIGS. 5 and 6, the appearance structure of the target electrode used in the magnetron sputtering apparatus of the embodiment will be described. FIG. 5 is an external perspective view showing an example of the target electrode used in the magnetron sputtering apparatus of the embodiment. FIG. 6 is a top view of the target electrode shown in FIG. 5.

[0033] On the upper surface (positive Y-axis side) of the target electrode 50, the target 20 is exposed. The target 20 is held by the case 40 at its outer peripheral edge via an insulating plate 30 (see FIG. 3). The target 20 faces the workpiece 14 (see FIG. 1) disposed at an opposing position.

[0034] The target 20 is fastened to the magnet case 23 (see FIG. 3) by a plurality of bolts 24b.

[0035] As shown in FIG. 6, an insulating plate 30 is installed between the outer peripheral edge of the target 20 and the case 40. The insulating plates 30 are all plates of the same thickness, and a total of four insulating plates 30ea, 30eb, 30ec, and 30ed are installed, two each, at the upper and lower ends (negative and positive Z-axes) of the target 20 in FIG. 6. Also, a total of four insulating plates 30fa, 30fb, 30fc, and 30fd are installed, two each, at the left and right ends (negative and positive X-axes) of the target 20 in FIG. 6.

[0036] The four insulating plates 30ea, 30eb, 30ec, and 30ed installed on the paired side surfaces all have substantially the same shape (substantially congruent shapes). Also, the four insulating plates 30fa, 30fb, 30fc, and 30fd installed on the paired side surfaces all have substantially the same shape (substantially congruent shapes).

[0037] The insulating plate 30ea and the insulating plate 30eb are installed with a gap g2 therebetween at the upper end (negative Z-axis) of the target 20 in FIG. 6. Also, the insulating plate 30ec and the insulating plate 30ed are installed with a gap g6 therebetween at the lower end (positive Z-axis) of the target 20 in FIG. 6.

[0038] The insulating plates 30fa and 30fb are installed with a gap g4 therebetween at the left end (negative X-axis side) of the target 20 in FIG. 6. Also, the insulating plates 30fc and 30fd are installed with a gap g8 therebetween at the right end (positive X-axis side) of the target 20 in FIG. 6.

[0039] Further, the insulating plates 30ea and 30fa are installed with a gap g1 therebetween at the upper left corner of the target 20 in FIG. 6. The insulating plates 30eb and 30fc are installed with a gap g3 therebetween at the upper right corner of the target 20 in FIG. 6. The insulating plates 30ec and 30fb are installed with a gap g5 therebetween at the lower left corner of the target 20 in FIG. 6. Also, the insulating plates 30ed and 30fd are installed with a gap g7 therebetween at the lower right corner of the target 20 in FIG. 6.

[0040] The gaps g1, g2, g3, g4, g5, g6, g7, and g8 all communicate with the inside of the chamber 12 (see FIG. 1). Each of the gaps g1 to g8 forms an exhaust flow path for exhausting the air (gas) inside the target electrode 50 to the inside of the chamber 12. The exhaust flow path will be described in detail later (see FIG. 9).

[0041] (Internal Structure of Target Electrode) Using FIGS. 7 and 8, the internal structure of the target electrode 50 used in the magnetron sputtering apparatus of the embodiment will be described. FIG. 7 is an external perspective view showing an example of the internal structure of the target electrode used in the magnetron sputtering apparatus of the embodiment. FIG. 8 is a top view of the internal structure of the target electrode shown in FIG. 7.

[0042] A plurality of insulating plates 30ea, 30eb, 30ec, and 30ed having substantially the same shape and the same thickness are installed on the inner surface along the X-axis of the case 40. The insulating plates 30ea, 30eb, 30ec, and 30ed are all fastened to the case 40 with bolts 24a.

[0043] As shown in FIG. 8, a gap g2 along the Y-axis is formed between adjacent insulating plates 30ea and 30eb. Also, a gap g6 along the Y-axis is formed between adjacent insulating plates 30ec and 30ed. The gap g2 and the gap g6 are at substantially the same interval, and both gaps communicate with the inside of the chamber 12 (see FIG. 1).

[0044] On the inner surface of the case 40 along the Z-axis, a plurality of insulating plates 30fa, 30fb, 30fc, and 30fd having substantially the same shape and the same thickness are installed. The insulating plates 30fa, 30fb, 30fc, and 30fd are all fastened to the case 40 with bolts 24a.

[0045] As shown in FIG. 8, a gap g4 along the Y-axis is formed between adjacent insulating plates 30fa and 30fb. Also, a gap g8 along the Y-axis is formed between adjacent insulating plates 30fc and 30fd. The gap g4 and the gap g8 are at substantially the same interval, and both gaps communicate with the inside of the chamber 12.

[0046] At the upper left corner of the inner surface of the case 40 along the Y-axis, a gap g1 along the Y-axis is formed between the insulating plate 30ea and the insulating plate 30fa. Also, at the upper right corner of the inner surface of the case 40 along the Y-axis, a gap g3 along the Y-axis is formed between the insulating plate 30eb and the insulating plate 30fc. Also, at the lower left corner of the inner surface of the case 40 along the Y-axis, a gap g5 along the Y-axis is formed between the insulating plate 30ec and the insulating plate 30fb. Also, at the lower right corner of the inner surface of the case 40 along the Y-axis, a gap g7 along the Y-axis is formed between the insulating plate 30ed and the insulating plate 30fd. The gaps g1, g3, g5, and g7 are all of substantially constant size (width), and all the gaps communicate with the inside of the chamber 12.

[0047] On the inner bottom surface of the case 40, insulating plates 30a, 30b, 30c, and 30d are installed. The insulating plates 30a, 30b, 30c, and 30d are all fastened to the case 40 with bolts 24d.

[0048] The insulating plates 30a, 30b, 30c, and 30d have substantially the same shape and the same thickness. Due to the countersunk holes at the bolt fastening parts and the notches for attaching other components, they are not completely congruent, but the insulating plates 30a, 30b, 30c, and 30d are substantially congruent. The insulating plates 30b and 30c are substantially the same as the outer shape of the insulating plate 30a (or the insulating plate 30d) turned over.

[0049] As shown in FIG. 8, a gap g12 along the Z-axis and the outer periphery of the high voltage application unit 31 is formed between the adjacent insulating plates 30a and 30b. A gap g14 along the X-axis and the outer periphery of the cooling water channel 32 is formed between the adjacent insulating plates 30a and 30c. A gap g17 along the Z-axis and the outer periphery of the high voltage application unit 31 is formed between the adjacent insulating plates 30c and 30d. And a gap g15 along the X-axis and the outer periphery of the cooling water channel 33 is formed between the adjacent insulating plates 30b and 30d.

[0050] Furthermore, a gap g9 is formed between the insulating plate 30a and the insulating plate 30fa. Also, a gap g13 is formed between the insulating plate 30b and the insulating plate 30fc. Also, a gap g16 is formed between the insulating plate 30c and the insulating plate 30fb. Also, a gap g18 is formed between the insulating plate 30d and the insulating plate 30fd. The gaps g9, g13, g16, and g18 are all of substantially constant size (width).

[0051] Also, a gap g10 is formed between the insulating plate 30a and the insulating plate 30ea. Also, a gap g11 is formed between the insulating plate 30b and the insulating plate 30eb. Also, a gap g19 is formed between the insulating plate 30c and the insulating plate 30ec. Also, a gap g20 is formed between the insulating plate 30d and the insulating plate 30ed. The gaps g10, g11, g19, and g20 are all of substantially the same size (width).

[0052] Also, a circular gap g21 is formed between the insulating plates 30a, 30b, 30c, 30d and the high voltage application unit 31 (see FIG. 2).

[0053] All the gaps g1 to g21 shown in FIG. 8 are in communication with each other. Therefore, any point in the gaps g1 to g21 communicates with the inside of the chamber 12 by traversing each gap.

[0054] (Exhaust path for residual gas) The exhaust path of the air (gas) remaining inside the target electrode 50 will be described with reference to FIG. 9. FIG. 9 is a diagram showing the exhaust path of the residual gas in the target electrode used in the magnetron sputtering apparatus of the embodiment.

[0055] The above-described gaps g1 to g21 are in communication with each other, and each gap communicates with the inside of the chamber 12.

[0056] Specifically, the gap g12 formed on the inner bottom surface of the case 40 communicates with the gaps g10 and g11 formed at the boundary between the inner bottom surface and the inner side surface of the case 40. The gap g14 formed on the inner bottom surface of the case 40 communicates with the gaps g9 and g16 formed at the boundary between the inner bottom surface and the inner side surface of the case 40. The gap g15 formed on the inner bottom surface of the case 40 communicates with the gaps g13 and g18 formed at the boundary between the inner bottom surface and the inner side surface of the case 40. And the gap g17 formed on the inner bottom surface of the case 40 communicates with the gaps g19 and g20 formed at the boundary between the inner bottom surface and the inner side surface of the case 40. Also, the gaps g12, g14, g15, g17 communicate with the circular gap g21.

[0057] And the gaps g10 and g11 formed at the boundary between the inner bottom surface and the inner side surface of the case 40 communicate with the gaps g1, g2, and g3 formed on the inner side surface of the case 40 respectively, leading to the inside of the chamber 12. That is, an exhaust flow path R1 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g1. Also, an exhaust flow path R4 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g2. Furthermore, an exhaust flow path R6 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g3.

[0058] Also, the gaps g9 and g16 formed at the boundary between the inner bottom surface and the inner side surface of the case 40 communicate with the gaps g1, g4, and g5 formed on the inner side surface of the case 40 respectively, leading to the inside of the chamber 12. That is, an exhaust flow path R1 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g1. Also, an exhaust flow path R2 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g4. Furthermore, an exhaust flow path R3 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g5.

[0059] In addition, the gaps g13 and g18 formed at the boundary between the inner bottom surface and the inner side surface of the case 40 communicate with the gaps g3, g8, and g7 formed on the inner side surface of the case 40, respectively, and lead to the inside of the chamber 12. That is, an exhaust flow path R6 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g3. Also, an exhaust flow path R7 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g8. Furthermore, an exhaust flow path R8 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g7.

[0060] In addition, the gaps g19 and g20 formed at the boundary between the inner bottom surface and the inner side surface of the case 40 communicate with the gaps g5, g6, and g7 formed on the inner side surface of the case 40, respectively, and lead to the inside of the chamber 12. That is, an exhaust flow path R3 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g5. Also, an exhaust flow path R5 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g6. Furthermore, an exhaust flow path R8 is formed through which the air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through the gap g7.

[0061] Thus, the target electrode 50 of the present embodiment can promote the exhaust of the air (gas) remaining inside the electrode, and thus can prevent the occurrence of local abnormal discharge inside the electrode due to the remaining gas.

[0062] In the present embodiment, an example of the magnetron sputtering apparatus 10 that performs sputtering on the workpiece 14 has been described. However, the scope of application of the present disclosure is not limited to this. The present disclosure can also be applied to, for example, a so-called plasma processing apparatus that modifies, cleans, etc. the surface of the workpiece installed at the position of the target 20 described in the embodiment by the plasma generated inside the chamber 12.

[0063] (Target electrode of the comparative example) With reference to FIG. 10, the target electrode 50a of the comparative example will be described. FIG. 10 is a cross-sectional view showing an example of the schematic configuration of the target electrode included in the magnetron sputtering apparatus of the comparative example.

[0064] Unlike the target electrode 50 (see FIG. 2) included in the magnetron sputtering apparatus 10 of the embodiment, the target electrode 50a of the comparative example includes an integral insulating plate 35. That is, the insulating plate 35 is installed so as to integrally cover the inner bottom surface and the inner side surface of the case 40.

[0065] When such an integral insulating plate 35 is provided, the residual gas inside the target electrode 50a passes through the minute voids between the insulating plate 35 and the inner bottom surface and the inner side surface of the case 40, and is discharged into the chamber 12. Therefore, compared with the target electrode 50 described in the embodiment, the exhaust resistance is clearly large, so the exhaust efficiency is inferior. Therefore, there is a high possibility that gas remains inside the target electrode 50a. Therefore, according to the target electrode 50a of the comparative example, compared with the target electrode 50 of the embodiment, there is a high possibility that local abnormal discharge occurs inside the electrode.

[0066] (Operational effects of the embodiment) As described above, each of the magnetron sputtering apparatuses 10 of the embodiments includes a target 20 that emits particles to be deposited, which is housed inside the chamber 12, a magnet 22 installed facing the back surface side of the target 20, a high voltage application unit 31 that applies a high voltage to the target 20, a case 40 (holding member) that houses the target 20, the magnet 22, and the high voltage application unit 31 such that the surface of the target 20 is exposed to form a target electrode 50, an insulating plate 30 in which a plurality of plate materials are arranged with gaps (g1 to g21) communicating with the inside of the chamber 12 provided between the bottom and side surfaces of the magnet 22 and the case 40, and a workpiece 14 installed at a position facing the target 20, on which a film is formed by particles knocked out from the surface of the target 20 when the inert gas supplied into the chamber 12 is ionized by the high voltage generated by the high voltage application unit 31 and collided with the surface of the target 20. Therefore, since the exhaust of air (gas) inside the target electrode 50 can be promoted, the occurrence of local abnormal discharge inside the target electrode 50 can be reduced.

[0067] Further, in the magnetron sputtering apparatus 10 of the embodiment, the gaps (g1 to g21) form exhaust flow paths (R1 to R8) for the residual air (gas) in the workpiece 14. Therefore, the air (gas) inside the target electrode 50 can be efficiently exhausted into the chamber 12.

[0068] Further, in the magnetron sputtering apparatus 10 of the embodiment, the gaps (g1 to g21) are each formed with a substantially constant size (width). Therefore, since the exhaust resistance in each of the gaps (g1 to g21) becomes constant, the exhaust can be promoted.

[0069] Further, in the magnetron sputtering apparatus 10 of the embodiment, all the plate materials constituting the insulating plate 30 have the same thickness. Therefore, the productivity of the insulating plate can be improved.

[0070] Also, in the magnetron sputtering apparatus 10 of the embodiment, the shapes of the plurality of insulating plates (30a, 30b, 30c, 30d) installed at the bottom of the magnet 22 are all substantially congruent, and the shapes of the plurality of insulating plates (30ea, 30eb, 30ec, 30ed) and the plurality of insulating plates (30fa, 30fb, 30fc, 30fd) installed on the opposing side surfaces of the magnet 22 are all substantially congruent. Therefore, since the shape of the insulating plate is limited, the productivity of the insulating plate can be improved.

[0071] As described above, the embodiments of the present invention have been explained. However, the above-described embodiments are presented as examples and are not intended to limit the scope of the present invention. This novel embodiment can be implemented in various other forms. Also, various omissions, replacements, and changes can be made without departing from the gist of the invention. Further, this embodiment is included in the scope and gist of the invention and is included in the invention described in the claims and its equivalent scope.

Explanation of Signs

[0072] 10 Magnetron sputtering apparatus 12 Chamber 13 Anode 14 Workpiece 15 DC power supply 16 Gas supply path 17 Exhaust path 18 Target particles 20 Target 22 Magnet 23 Magnet case 24a, 24b, 24c, 24d Bolts 25 Through hole 26 Air pocket 30, 30a, 30b, 30c, 30d, 30ea, 30eb, 30ec, 30ed, 30fa, 30fb, 30fc, 30fd Insulating plates 31 High voltage application unit 32, 33 Cooling water paths 40 Case (holding member) 50, 50a target electrode g1, g2, g3, g4, g5, g6, g7, g8, g9, g10, g11, g12, g13, g14, g15, g16, g17, g18, g19, g20, g21 gaps R1, R2, R3, R4, R5, R6, R7, R8 exhaust gas flow paths

Claims

1. All are housed inside the chamber, a target that releases particles for film formation, a magnet installed facing the back side of the target, a high-voltage application unit that applies a high voltage to the target via the magnet case housing the magnet and the magnet, a holding member that houses the target, the magnet, the magnet case, and the high-voltage application unit so that the surface of the target is exposed to form a target electrode, an insulating plate in which a plurality of plate materials are arranged with a gap formed between the bottom surface and side surfaces of the magnet and the inner wall of the holding member, passing through the side surface of the magnet across the bottom surface of the magnet and communicating with the inside of the chamber, a workpiece installed at a position facing the target, which is formed by particles knocked out from the surface of the target when an inert gas supplied into the chamber is ionized by a high voltage generated by the high-voltage application unit and collided with the surface of the target, the gap forms an exhaust flow path for residual air (gas), a magnetron sputtering device.

2. The gaps are each formed with a substantially constant size, The magnetron sputtering device according to Claim 1.

3. All the plate materials constituting the insulating plate have the same thickness, The magnetron sputtering device according to Claim 1.

4. The shapes of the plurality of insulating plates installed at the bottom of the magnet are substantially congruent, and the shapes of the plurality of insulating plates installed on the paired side surfaces of the magnet are substantially congruent, The magnetron sputtering device according to Claim 1.

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