Retention device and method for manufacturing a retention device

Abstract

In a holding device, a technique for improving the degree of freedom in design is provided. 【Solution means】 A holding device includes a base having a flow path through which a fluid flows and including a bent portion, a plate-like substrate base material disposed on the base, the substrate base material having a mounting surface on which the substrate is mounted, an opening formed in the mounting surface, and a through hole communicating the flow path of the base and the opening; a ceramic sintered body disposed inside the through hole and having a porous portion and a cylindrical dense portion disposed outside the porous portion; and the end of the ceramic sintered body reaches inside the flow path.

Description

Technical Field

[0001] The present invention relates to a holding device and a method for manufacturing the holding device.

Background Art

[0002] Conventionally, a holding device for holding a substrate has been known (for example, Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, even with prior arts such as Patent Documents 1 and 2, there is still room for improvement in the technology for improving the degree of freedom in design in the holding device.

[0005] The present invention has been made to solve the above-described problems, and an object thereof is to provide a technology for improving the degree of freedom in design in a holding device.

Means for Solving the Problems

[0006] The present invention has been made to solve at least a part of the above-described problems and can be realized in the following forms.

[0007] (1) According to one embodiment of the present invention, a holding device for holding a substrate is provided. This holding device includes a base having a flow path through which a fluid flows and including a bent portion, a plate-shaped substrate base material disposed on the base, the substrate base material having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base with the opening, and a ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion, and an end of the ceramic sintered body reaches inside the flow path.

[0008] According to this configuration, the ceramic sintered body having the porous portion and the cylindrical dense portion disposed outside the porous portion has an end reaching inside the flow path inside the base. Thereby, for example, when a conductive film is disposed between the base and the substrate base material, leakage of the fluid flowing through the flow path and contact with the conductive film are suppressed, so that abnormal discharge due to ionization of the leaked fluid can be suppressed. Further, the ceramic sintered body is disposed inside the through hole through the opening formed in the placement surface of the substrate base material. Thereby, the ceramic sintered body can be attached to the substrate base material regardless of the shape of the flow path of the base. Therefore, the degree of freedom in designing the holding device including the ceramic sintered body for suppressing abnormal discharge can be improved.

[0009] (2) In the holding device of the above embodiment, the substrate base material and the ceramic sintered body may not be joined by a joining material. According to this configuration, the ceramic sintered body is joined to the substrate base material without using a joining material. Thereby, generation and contamination of foreign matters derived from the joining material can be suppressed in the environment where the holding device is used.

[0010] (3) In the holding device of the above-described embodiment, the ceramic sintered body is disposed closer to the base than the placement surface. In a cross-section including the central axis of the holding device, the length of the ceramic sintered body in the stacking direction of the base and the substrate base material may be 1.5 times or more the thickness of the substrate base material in the stacking direction. According to this configuration, for example, when a conductive film is disposed between the base and the substrate base material, the end face on the base side of the ceramic sintered body is located at a place relatively far from the conductive film. As a result, it becomes difficult for the fluid in the flow path, which is likely to be at a relatively high pressure, to pass between the base and the ceramic sintered body, so that contact between the fluid and the conductive film can be suppressed. Therefore, the occurrence of abnormal discharge can be further suppressed.

[0011] (4) In the holding device of the above-described embodiment, the substrate base material has a reference surface and a plurality of protrusions standing on the reference surface, and the placement surface is formed by the tip surfaces of the respective plurality of protrusions. The ceramic sintered body may be disposed closer to the base than the reference surface. According to this configuration, the ceramic sintered body is disposed closer to the base than the reference surface. Since the placement surface on which the substrate is placed is formed by the tip surfaces of the plurality of protrusions standing on the reference surface, it is difficult for the ceramic sintered body and the substrate to come into contact. Therefore, since the design tolerance of the holding device can be made relatively large, the degree of freedom in the design of the holding device can be improved.

[0012] (5) In the holding device of the above-described embodiment, the opening has a shape recessed with respect to the placement surface, and an opening surface located on the base side with respect to the placement surface is formed. The end portion of the ceramic sintered body on the side opposite to the base may be located on the placement surface side with respect to the opening surface. According to this configuration, inside the opening, a groove through which an air flow passes through the porous portion is formed around the end portion of the ceramic sintered body on the side opposite to the base. Thereby, for example, in an etching process using plasma, etching residues generated from the substrate can be collected in the groove by the air flow passing through the porous portion. Further, since the distance between the substrate placed on the placement surface and the ceramic sintered body becomes relatively small, the occurrence of abnormal discharge in the etching process using plasma can be suppressed.

[0013] (6) In the holding device of the above-described embodiment, the end face of the end portion of the ceramic sintered body on the side opposite to the base may have a mountain-shaped curved surface shape. According to this configuration, since the distance between the substrate placed on the placement surface and the end portion of the ceramic sintered body on the side opposite to the base becomes relatively small, the occurrence of abnormal discharge in the etching process using plasma can be suppressed.

[0014] (7) In the holding device of the above-described embodiment, the end portion of the porous portion on the side opposite to the base may have a valley-shaped curved surface shape. According to this configuration, for example, when sandblasting is used to form a plurality of protrusions on the reference surface of the substrate base material, the end portion of the porous portion on the side opposite to the base is processed to have a valley-shaped curved surface shape. That is, in the process of processing a plurality of protrusions, the end portion of the porous portion on the side opposite to the base can be processed. Therefore, a part of the process included in the manufacturing method of the holding device can be simplified.

[0015] (8) In the holding device of the above-described embodiment, the base material for the substrate and the ceramic sintered body are joined by a joining material, and in a cross-section including the central axis of the holding device, the ceramic sintered body may be formed such that the width decreases from the placement surface side toward the base side. According to this configuration, when the base material for the substrate and the ceramic sintered body are joined by the joining material, the adhesion between the inside of the through-hole and the outside of the ceramic sintered body can be improved. Thereby, leakage of fluid in the joining material can be suppressed.

[0016] (9) In the holding device of the above-described embodiment, the porous portion has a communication hole that communicates the inside of the flow path and the outside of the holding device, and the inner diameter of the communication hole may be 0.1 mm or less. According to this configuration, by passing through the communication hole, fluid can easily move between the inside of the flow path and the outside of the holding device. Further, since the inner diameter of the communication hole is 0.1 mm or less, generation of abnormal discharge through the fluid passing through the communication hole can be suppressed.

[0017] (10) In the holding device of the above-described embodiment, the porous portion may have a recessed portion at at least one of the end on the base side and the end on the side opposite to the base. According to this configuration, since the pressure loss of the fluid passing through the porous portion can be reduced to some extent, the fluid can easily move between the inside of the flow path and the outside of the holding device.

[0018] (11) In the holding device of the above-described embodiment, the base material for the substrate is formed of a material mainly composed of aluminum nitride or alumina, and the base is a sintered body formed of a material mainly composed of silicon carbide or a sintered body containing silicon carbide and having a thermal conductivity of 70 W / mK or more. According to this configuration, each of aluminum nitride, which is the main component forming the base material for the substrate, and silicon carbide, which forms the base, has a relatively high thermal conductivity. Thereby, since the heat of the placement surface can be moved relatively quickly, generation of defects due to heat can be suppressed even in a process using relatively high-density energy.

[0019] (12) In the holding device of the above-described embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body may be greater than either the average linear thermal expansion coefficient of the material forming the base material for the substrate or the average linear thermal expansion coefficient of the material forming the base. According to this configuration, when the temperature of the holding device rises, the ceramic sintered body expands so as to be larger than the size of the through holes and flow paths. As a result, the ceramic sintered body receives compressive stress from the inner walls of the through holes and flow paths, so that the adhesion between the ceramic sintered body and the inner walls of the through holes and flow paths can be improved. Therefore, since the fluid flowing through the flow path becomes less likely to pass between the base and the ceramic sintered body, the occurrence of abnormal discharge can be further suppressed.

[0020] (13) In the holding device of the above-described embodiment, the ceramic sintered body may be formed of a material mainly composed of alumina. According to this configuration, the ceramic sintered body is formed of a material mainly composed of relatively high-purity alumina. Thereby, the generation and contamination of foreign substances derived from the ceramic sintered body can be suppressed in the environment where the holding device is used.

[0021] (14) According to another aspect of the present invention, a method for manufacturing a holding device is provided. This method for manufacturing a holding device includes a preparation step of preparing the base, the base material for the substrate, and the ceramic sintered body, a joining step of joining the base and the base material for the substrate, and after the joining step, inserting the ceramic sintered body inside the through hole through the opening of the base material for the substrate and fixing the ceramic sintered body to the base material for the substrate. According to this configuration, after the joining step of joining the base and the base material for the substrate, the ceramic sintered body is inserted inside the through hole through the opening of the base material for the substrate, and the ceramic sintered body is fixed to the base material for the substrate. Thereby, the degree of freedom in the shape of the flow path in the base having the flow path including the bent bent portion is improved. Therefore, the degree of freedom in the design of the holding device including the ceramic sintered body that suppresses abnormal discharge can be improved.

[0022] (15) In the method for manufacturing the holding device of the above-described embodiment, in the preparation step, a conductive film may be prepared, and in the bonding step, the substrate base material and the base may be bonded so that the conductive film is located between the substrate base material and the base. According to this configuration, the conductive film is located between the substrate base material and the base, and in the base, the end of the ceramic sintered body reaches the inside of the flow path. Thereby, contact between the fluid flowing through the flow path and the conductive film can be suppressed. Therefore, it is possible to manufacture a holding device that can further suppress the occurrence of abnormal discharge.

[0023] Note that the present invention can be realized in various aspects. For example, a method for repairing a holding device, a system including the holding device, a control method for the holding device and a system including the holding device, a computer program for causing a substrate to be held in the holding device and a system including the holding device, a server device for distributing the computer program, and a non-temporary storage medium storing the computer program.

Brief Description of the Drawings

[0024]

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Modes for Carrying Out the Invention

[0025] <First Embodiment> FIG. 1 is a perspective view of a holding device 1A according to the first embodiment. FIG. 2 is a cross-sectional view of the holding device 1A according to the first embodiment. FIG. 3 is an enlarged view of a portion A in FIG. 2. The holding device 1A of the present embodiment is an electrostatic chuck that adsorbs and holds a substrate W by electrostatic attraction. The electrostatic chuck is used, for example, as a table on which the substrate W is placed in an etching process using plasma in a chamber equipped with an electrostatic chuck. The holding device 1A of the present embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30A, a joint portion 41, and a conductive film 42. In the holding device 1A, as shown in FIG. 1, the base 10, the conductive film 42, the joint portion 41, and the substrate base material 20 are laminated in this order. In FIGS. 1 and 2, for convenience, the stacking direction of the base 10 and the substrate base material 20 is defined as the z-axis direction, the direction perpendicular to the z-axis is defined as the x-axis direction, and the direction perpendicular to both the z-axis and the x-axis is defined as the y-axis direction. For the sake of convenience in explanation, the size relationships of the base 10, the substrate base material 20, the ceramic sintered body 30A, the joint portion 41, and the conductive film 42 in FIGS. 1, 2, and 3 are different from the actual relationships.

[0026] The base 10 is a substantially cylindrical member that serves as the base of the holding device 1A. The base 10 is a sintered body mainly composed of silicon carbide (SiC). Here, the "main component" means the component with the highest content ratio. From the viewpoint of the cooling function, the thermal conductivity of the material forming the base 10 is preferably 70 W / mK or more. Note that the material forming the base 10 is not limited to a material mainly composed of silicon carbide. The base 10 may be formed of a material obtained by adding at least one of metal carbides, metal nitrides, and metal silicides to silicon carbide, aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), alloys thereof, a composite of a metal and a ceramic such as SUS or Al-SiC, or a material mainly composed of a ceramic such as aluminum nitride (AlN) or alumina (Al2O3).

[0027] As shown in FIGS. 2 and 3, which are cross-sections including the central axis C1 of the holding device 1A, the base 10 has a flow path 11 through which a fluid flows, and the flow path 11 includes a bent bent portion 11a. The flow path 11 has a first flow path 11b formed to extend in the horizontal direction including the x-axis direction and the y-axis direction, and a plurality of second flow paths 11c and 11d formed to extend in the z-axis direction. The bent portion 11a connects the first flow path 11b and the second flow paths 11c and 11d. As shown in FIG. 2, the second flow path 11c and the second flow path 11d are formed so as to be displaced in the z-axis direction. That is, it can be said that the flow path 11 is not linearly formed in the base 10.

[0028] In the present embodiment, among the flow paths 11, the second flow path 11c connected to the plus side in the z-axis direction of the first flow path 11b is formed so that the size on the plus side in the z-axis direction becomes larger. As a result, a stepped surface 10a is formed on the inner wall of the second flow path 11c (see FIG. 3). An inert gas such as helium gas flows through the flow path 11. The base 10 of the present embodiment has a refrigerant flow path (not shown) through which a refrigerant such as a fluorine-based inert liquid or water flows. As shown in FIG. 2, the base 10 is larger than a substrate base material 20 described later. Note that the size relationship between the base 10 and the substrate base material 20 is not limited to this. They may have the same size.

[0029] The substrate base material 20 is a plate-like member disposed on the base 10. The substrate base material 20 of the present embodiment has a reference surface 20c, a plurality of protrusions 20d erected on the reference surface 20c, and an opening surface 20e on one main surface 20a on the side opposite to the base 10 among a pair of main surfaces 20a and 20b of the substrate base material 20. The reference surface 20c is located closer to the base 10 side than one main surface 20a of the substrate base material 20. The opening surface 20e is located closer to the base 10 side than the reference surface 20c. The substrate base material 20 has a main component of ceramics. The substrate base material 20 of the present embodiment is formed of a material having aluminum nitride as a main component. Note that the substrate base material 20 may be formed of other ceramics such as alumina.

[0030] The substrate base material 20 for the substrate has a mounting surface 21 on which the substrate W is placed, an opening 22 formed in the mounting surface 21, a through hole 23 that communicates the flow path 11 of the base 10 and the opening 22, and a chuck electrode 24. In the substrate base material 20 of the present embodiment, as shown in FIG. 3, the mounting surface 21 is formed by the tip surfaces 20f each of the plurality of protrusions 20d has. Specifically, when the holding device 1A holds the substrate W, as shown in FIG. 2, the substrate W is in contact with each of the tip surfaces 20f each of the plurality of protrusions 20d has and the outer peripheral surface 20g of one main surface 20a of the substrate base material 20.

[0031] The opening 22 is a portion that is open on the opening surface 20e formed on one main surface 20a of the substrate base material 20. The opening 22 has a shape recessed with respect to the reference surface 20c. The depth of the opening 22 in the stacking direction (z-axis direction) is, for example, 15 μm.

[0032] The through hole 23 is located on the minus side in the z-axis direction with respect to the opening 22 in the substrate base material 20. The inner size of the through hole 23 is the same as the inner size of the plus-side portion in the z-axis direction of the second flow path 11c among the flow paths 11 the base 10 has.

[0033] The chuck electrode 24 is disposed inside the substrate base material 20. The chuck electrode 24 is formed of a conductive material such as tungsten or molybdenum, for example. The chuck electrode 24 is connected to an external power source via an electrode terminal (not shown). When power is supplied from the external power source, the chuck electrode 24 generates an electrostatic attraction force capable of adsorbing and holding the substrate W on the mounting surface 21 of the substrate base material 20. In addition to the chuck electrode 24 or instead of the chuck electrode 24, a high-frequency electrode or a heater electrode may be disposed in the substrate base material 20.

[0034] The ceramic sintered body 30A is a ceramic sintered body disposed inside the through hole 23 of the substrate base material 20. The ceramic sintered body 30A of the present embodiment is formed of a material mainly composed of alumina and has a substantially cylindrical shape. The ceramic sintered body 30A has insulating properties and is provided to suppress discharge using the through hole 23 and the flow path 11 as discharge paths in an etching process using plasma. In the present embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body 30A is greater than both the average linear thermal expansion coefficient of the material forming the substrate base material 20 and the average linear thermal expansion coefficient of the material forming the base 10.

[0035] The ceramic sintered body 30A has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. The porous portion 31 is a substantially cylindrical portion having relatively many pores. A part of the plurality of pores formed in the porous portion 31 communicates with each other and serves as a flow path through which the inert gas flowing through the flow path 11 can pass. That is, the porous portion 31 has gas permeability. The porosity of the porous portion 31 is preferably 50% or more, and more preferably 60% or more. The dense portion 32 is a portion formed more densely than the porous portion 31 in the ceramic sintered body 30A and has a substantially circular tube shape. The ceramic sintered body 30A has a substantially cylindrical shape, and the porous portion 31 and the dense portion 32 are integrally formed. In the present embodiment, the difference between the outer diameter of the ceramic sintered body 30A and the inner size of the through hole 23 of the substrate base material 20 is 0.05 mm to 0.5 mm, and the outer diameter of the ceramic sintered body 30A is smaller than the inner diameter of the through hole 23 of the substrate base material 20.

[0036] In the present embodiment, the ceramic sintered body 30A and the substrate base material 20 are joined by an adhesive layer 33. The adhesive layer 33 is formed of a heat-resistant material such as a silicone-based resin, and a filler such as alumina is added thereto. Thereby, since the glass transition temperature of the adhesive layer 33 becomes high, the heat resistance of the adhesive layer 33 can be improved.

[0037] As shown in FIG. 3, the ceramic sintered body 30A is disposed closer to the base 10 than the reference plane 20c. Specifically, the ceramic sintered body 30A is arranged such that the end face of the plus-side end 301 in the z-axis direction is located in the minus direction of the z-axis with respect to the reference plane 20c. That is, the ceramic sintered body 30A is disposed closer to the base 10 than the mounting surface 21. In the present embodiment, as shown in FIG. 3, the end face of the end 301 of the ceramic sintered body 30A is located substantially on the same plane as the opening surface 20e.

[0038] In a cross section including the central axis C1 of the holding device 1A as shown in FIG. 3, the length L of the ceramic sintered body 30A in the stacking direction of the base 10 and the substrate base material 20 is 1.5 times or more the thickness D of the substrate base material 20 in the stacking direction. For example, when the thickness D of the substrate base material 20 in the stacking direction is 1.3 mm, the length L of the ceramic sintered body 30A is about 3 mm, and the ratio of the length L of the ceramic sintered body 30A to the thickness D of the substrate base material 20 in the stacking direction is approximately 2.3. The minus-side end 302 of the ceramic sintered body 30A in the z-axis direction reaches inside the flow path 11. Specifically, as shown in FIG. 2, the ceramic sintered body 30A is arranged such that the end face of the minus-side end 302 of the ceramic sintered body 30A in the z-axis direction contacts the stepped surface 10a formed on the inner wall of the flow path 11 of the base 10. Note that FIG. 3 shows the relationship between the thickness D of the substrate base material 20 and the length L of the ceramic sintered body 30A differently from the actual situation for convenience of explanation.

[0039] The joint portion 41 is disposed between the base 10 and the substrate base material 20. The joint portion 41 is a metal bonding material mainly composed of indium (In), and joins the base 10 and the substrate base material 20 via a conductive film 42 to be described later. Note that the joint portion 41 is not limited to a metal bonding material mainly composed of indium, and may be a silicone-based organic bonding material, a brazing material including hard solder or soft solder, an inorganic bonding material, or a metal bonding material including metals such as gold (Au) and aluminum other than indium.

[0040] The conductive film 42 is disposed between the joint portion 41 and the base 10. The conductive film 42 is formed of aluminum. When the holding device 1A is used in a process involving plasma, high-frequency power can be applied to the holding device 1A through the conductive film 42.

[0041] Next, a method for manufacturing the holding device 1A of the present embodiment will be described. The holding device 1A is manufactured by separately manufacturing the base 10, the substrate base material 20, and the ceramic sintered body 30A, joining the base 10 and the substrate base material 20 by the joint portion 41, and then attaching the ceramic sintered body 30A to the substrate base material 20.

[0042] In the manufacturing method of the holding device 1A, first, the base 10, the portion that will become the substrate base material 20, and the ceramic sintered body 30A are prepared (preparation step). In the production of the base 10, a binder is added to a raw material powder containing silicon carbide and a raw material powder containing additives such as boron carbide (B4C) to granulate the granular powder. Using the granulated granular powder, an ingot of a molded body is produced by isostatic pressing, and then a plurality of molded bodies that will become the base 10 are produced from the ingot of the molded body. Each of the plurality of molded bodies becomes a sintered body by being fired. A groove that will become the flow path 11 is processed in a specific sintered body among the plurality of sintered bodies, and the base 10 having the flow path 11 is manufactured by joining it with another sintered body. After joining the plurality of sintered bodies, final shaping may be performed. Note that the manufacturing method of the base 10 is not limited to this. For example, a slurry for a green sheet containing silicon carbide powder is formed into a sheet shape by a casting device, and a plurality of green sheets are produced by drying the obtained molded product. Next, holes or grooves corresponding to the flow path 11 are processed in a specific green sheet among the plurality of green sheets. Next, the base 10 may be produced by firing a laminate of green sheets in which a plurality of green sheets including the specific green sheet with the holes or grooves processed are laminated.

[0043] In the production of the portion that becomes the base material 20 for the substrate, first, a slurry for a green sheet containing aluminum nitride powder is formed into a sheet shape by a casting device, and a plurality of green sheets are produced by drying the obtained molded product. Next, using a metallizing paste, a portion that becomes the chuck electrode 24 is printed, for example, by a screen printing device, on a specific green sheet among the plurality of green sheets. Next, an aluminum nitride plate, which is the portion that becomes the base material 20 for the substrate, is produced by firing a laminate of green sheets in which a plurality of green sheets including the specific green sheet on which the metallizing paste is printed are laminated. Note that the manufacturing method of the portion that becomes the base material 20 for the substrate is not limited to this. For example, an additive such as yttrium oxide is added to a raw material powder containing aluminum nitride powder, and a binder is added to granulate the powder into granulated powder. The granulated powder is filled into a carbon mold and pressed and molded into a flat plate shape. A foil-shaped or mesh-shaped planar electrode is disposed on the molded body formed into a flat plate shape, and after further filling the granulated powder on the disposed planar electrode, it is fired while being pressed in a uniaxial direction with a carbon punch (powder hot pressing method). The base material 20 for the substrate can also be produced by such a powder hot pressing method.

[0044] FIG. 4 is a first diagram for explaining a method of manufacturing the ceramic sintered body 30A. FIG. 5 is a second diagram for explaining a method of manufacturing the ceramic sintered body 30A. In the production of the ceramic sintered body 30A, first, a plate-shaped green body C30 mainly composed of alumina is prepared. The green body C30 may be either a degreased body or a calcined body. Next, a plurality of through holes H31 are formed in the green body C30, and each of the through holes H31 is filled with a porous body paste P31 (see the white arrow F1 in FIG. 4). The porous body paste P31 is produced, for example, by kneading a mixture containing alumina powder, a pore-forming material such as resin beads that disappear by firing, a binder, an organic solvent, and the like. Examples of the method of filling the porous body paste P31 into the through holes H31 include a method using an injection molding apparatus and a method using a screen printing apparatus. Next, the green body C30 filled with the porous body paste P31 is fired at normal pressure. As a result, the alumina contained in the green body C30 and the porous body paste P31 are sintered, and a sintered body S30 in which a porous portion 31 based on the porous body paste P31 and the fired green body C30 are integrated is formed (see FIG. 5). Next, the porous portion 31 is cut out from the sintered body S30 so as to include a portion in contact with the porous portion 31 (see the white arrow F2 in FIG. 5). Thereby, a ceramic sintered body 30A having a dense portion 32 as a portion in contact with the porous portion 31 is produced. In FIGS. 4 and 5, a plurality of through holes H31 are formed in the plate-shaped green body C30 mainly composed of alumina so that a plurality of ceramic sintered bodies 30A are produced at one time. However, the number of ceramic sintered bodies 30A produced at one time is not limited to this. Further, the manufacturing method of the ceramic sintered body 30A is not limited to this.

[0045] FIG. 6 is a first diagram for explaining the manufacturing method of the holding device of the present embodiment. In the manufacturing method of the holding device 1A, after the preparation step, the base 10 and the aluminum nitride plate P20 serving as the substrate base material 20 are joined (joining step). Specifically, as shown in FIG. 6, a conductive sheet S42 serving as the conductive film 42 and a bonding sheet S41 serving as the joint portion 41 are arranged on the surface of the base 10 in which the flow path 11 is formed, and the aluminum nitride plate P20 is joined to the base 10 via the bonding sheet S41 (white arrow F3 in FIG. 6).

[0046] FIG. 7 is a second diagram for explaining the manufacturing method of the holding device of the present embodiment. In the manufacturing method of the holding device 1A, after the joining step, openings 22 and the like are processed in the aluminum nitride plate P20 (processing step). Specifically, the surface P20a of the aluminum nitride plate P20 is processed to form the opening 22 and the through hole 23. In the processing of the through hole 23, the joint portion 41 and the conductive film 42 are also processed simultaneously from the side of the aluminum nitride plate P20, and a stepped surface 10a is formed on the inner wall of the flow path 11 of the base 10. Note that after the preparation step, after forming the opening 22 and a part of the through hole 23 by processing the aluminum nitride plate P20 (processing step), the base 10 and the aluminum nitride plate P20 serving as the substrate base material 20 may be joined in the joining step.

[0047] FIG. 8 is a third diagram for explaining the manufacturing method of the holding device of the present embodiment. In the manufacturing method of the holding device 1A, after the processing step, a plurality of protrusions 20d are formed on the aluminum nitride plate P20 (protrusion forming step). Specifically, the surface P20a of the aluminum nitride plate P20 is processed to form a plurality of protrusions 20d. Thereby, a reference surface 20c is formed between the plurality of protrusions 20d.

[0048] FIG. 9 is a fourth diagram for explaining a method of manufacturing the holding device of the present embodiment. In the method of manufacturing the holding device 1A, after the protrusion forming step, a ceramic sintered body 30A is fixed to an aluminum nitride plate P20 (fixing step). Specifically, as shown in FIG. 9, the ceramic sintered body 30A is inserted inside the through-hole 23 through the opening 22 of the aluminum nitride plate P20, and the ceramic sintered body 30A is fixed to the aluminum nitride plate P20. More specifically, an adhesive containing a silicone-based resin and a filler formed of alumina is poured between the ceramic sintered body 30A and the aluminum nitride plate P20 at Sp (white arrow F4 in FIG. 9) to bond the ceramic sintered body 30A and the aluminum nitride plate P20. Thereby, the holding device 1A is manufactured. Note that the manufacturing method of the holding device 1A is not limited to this.

[0049] According to the holding device 1A of the present embodiment described above, the ceramic sintered body 30A having the porous portion 31 and the cylindrical dense portion 32 disposed outside the porous portion 31 has an end portion 302 reaching inside the flow path 11 inside the base 10. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, the ceramic sintered body 30A is disposed inside the through-hole 23 through the opening 22 formed in the mounting surface 21 of the substrate base material 20. Thereby, the ceramic sintered body 30A can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in the design of the holding device 1A including the ceramic sintered body 30A that suppresses abnormal discharge can be improved.

[0050] Further, according to the holding device 1A of the present embodiment, the ceramic sintered body 30A is an insulating ceramic sintered body in which a porous portion 31 having a relatively large porosity and a dense portion 32 formed so as to cover the outer peripheral portion of the porous portion 31 are integrally formed. As a result, as described with reference to FIGS. 4 and 5, it is not necessary to separately produce and combine the porous portion 31 and the dense portion 32, so that it can be produced relatively easily. Further, when the holding device 1A is used, the porous portion 31 and the dense portion 32 are less likely to separate, so that abnormal discharge due to leakage of the inert gas between the porous portion 31 and the dense portion 32 can be suppressed.

[0051] Further, according to the holding device 1A of the present embodiment, the end face of the end portion 302 on the base 10 side of the ceramic sintered body 30A is located at a position relatively far from the conductive film 42 disposed between the base 10 and the substrate base material 20. As a result, the inert gas in the flow path 11, which is likely to be at a high voltage, is less likely to pass between the base 10 and the ceramic sintered body 30A and contact the conductive film 42. Therefore, the occurrence of abnormal discharge can be further suppressed.

[0052] Further, according to the holding device 1A of the present embodiment, the length L of the ceramic sintered body 30A with respect to the thickness D of the substrate base material 20 is 1.5 times or more, and the length L of the ceramic sintered body 30A is somewhat longer than the thickness D of the substrate base material 20. As a result, even when the substrate base material 20 is thin because the holding device 1A is used in a process that uses relatively high-density energy, the length of the ceramic sintered body 30A can be sufficiently ensured, so that abnormal discharge can be suppressed.

[0053] Further, according to the holding device 1A of the present embodiment, the ceramic sintered body 30A is disposed on the base 10 side with respect to the reference plane 20c. Since the mounting surface 21 on which the substrate W is mounted is formed by the tip surfaces 20f of a plurality of protruding portions 20d erected on the reference plane 20c, the ceramic sintered body 30A and the substrate W are less likely to come into contact with each other. Therefore, the design tolerance of the holding device 1A can be made relatively large, so that the degree of freedom in the design of the holding device 1A can be improved.

[0054] Further, according to the holding device 1A of the present embodiment, each of aluminum nitride, which is the main component forming the substrate base material 20, and silicon carbide, which is the main component forming the base 10, has a relatively high thermal conductivity. Thereby, since the heat of the mounting surface 21 can be moved relatively quickly, even in a process using relatively high-density energy, the occurrence of defects due to heat can be suppressed.

[0055] Further, according to the holding device 1A of the present embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body 30A is larger than either the average linear thermal expansion coefficient of the material forming the substrate base material 20 or the average linear thermal expansion coefficient of the material forming the base 10. Thereby, when the temperature of the holding device 1A rises during the use of the holding device 1A, the ceramic sintered body 30A receives compressive stress from the inner walls of the through holes 23 and the flow paths 11, so that the adhesion between the ceramic sintered body 30A and the inner walls of the through holes 23 and the flow paths 11 can be improved. Therefore, since the inert gas flowing through the flow path 11 is less likely to pass between the base 10 and the ceramic sintered body 30A, the occurrence of abnormal discharge can be further suppressed.

[0056] Further, according to the holding device 1A of the present embodiment, the ceramic sintered body 30A is formed of a material mainly composed of relatively high-purity alumina. Thereby, in the environment where the holding device 1A is used, the generation of foreign matters from the ceramic sintered body 30A and the contamination of the substrate W by trace components contained in the ceramic sintered body 30A can be suppressed.

[0057] Further, according to the manufacturing method of the holding device 1A of the present embodiment, after the bonding step of bonding the base 10 and the substrate base material 20, the ceramic sintered body 30A is inserted inside the through hole 23 through the opening 22 of the substrate base material 20, and the ceramic sintered body 30A is fixed to the substrate base material 20. Thereby, regardless of the shape of the flow path 11, the ceramic sintered body 30A can be fixed to the substrate base material 20, so that the degree of freedom in the shape of the flow path 11 in the base 10 is improved. Therefore, the degree of freedom in the design of the holding device 1A provided with the ceramic sintered body 30A for suppressing abnormal discharge can be improved.

[0058] Further, according to the manufacturing method of the holding device 1A of the present embodiment, the conductive film 42 is located between the substrate base material 20 and the base 10, and the ceramic sintered body 30A reaches the inside of the flow path at its end inside the base 10. Thereby, since the contact between the inert gas flowing through the flow path 11 and the conductive film 42 can be suppressed, the occurrence of abnormal discharge can be further suppressed.

[0059] <Second Embodiment> FIG. 10 is an enlarged cross-sectional view of the holding device 2 of the second embodiment. The holding device 2 of the second embodiment differs in the method of fixing the ceramic sintered body as compared with the holding device 1A (FIG. 3) of the first embodiment.

[0060] The holding device 2 of the second embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 50, a bonding portion 41, and a conductive film 42. The holding device 2 is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0061] The ceramic sintered body 50 is a ceramic sintered body disposed inside the through-hole 23 of the substrate base material 20. The ceramic sintered body 50 has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. Compared with the ceramic sintered body 30A of the first embodiment, the ceramic sintered body 50 is larger in size with respect to the through-hole 23. Specifically, the difference between the outer diameter of the ceramic sintered body 50 and the inner size of the through-hole 23 of the substrate base material 20 is 0.005 mm to 0.1 mm, and a part of the outer diameter of the ceramic sintered body 50 is larger than the inner diameter of the through-hole 23 of the substrate base material 20. In the holding device 2, the ceramic sintered body 50 is not fixed to the substrate base material 20 by a bonding material. That is, the holding device 2 does not have the adhesive layer 33 of the holding device 1A of the first embodiment between the substrate base material 20 and the ceramic sintered body 50. In the present embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body 50 is larger than either the average linear thermal expansion coefficient of the material forming the substrate base material 20 or the average linear thermal expansion coefficient of the material forming the base 10.

[0062] In the manufacturing method of the holding device 2 of the present embodiment, in the fixing step following the protrusion forming step, the ceramic sintered body 50 is fixed to the aluminum nitride plate P20 by press-fitting. Specifically, for example, using a press machine, the ceramic sintered body 50 is pushed into and press-fitted into the through-hole 23 through the opening 22. Thereby, the ceramic sintered body 50 is fixed to the substrate base material 20.

[0063] According to the holding device 2 of the present embodiment described above, the ceramic sintered body 50 having the porous portion 31 and the cylindrical dense portion 32 disposed outside the porous portion 31 has an end portion 302 reaching inside the flow path 11 inside the base 10. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, the ceramic sintered body 50 is disposed inside the through hole 23 via the opening 22. Thereby, regardless of the shape of the flow path 11 of the base 10, the ceramic sintered body 50 can be attached to the substrate base material 20. Therefore, the degree of freedom in designing the holding device 2 including the ceramic sintered body 50 that suppresses abnormal discharge can be improved.

[0064] Further, according to the holding device 2 of the present embodiment, the ceramic sintered body 50 has a dense portion 32 formed so as to cover the outer peripheral portion of the porous portion 31 having a relatively large porosity. Thereby, since the size of the ceramic sintered body 50 can be adjusted with high accuracy with respect to the size inside the through hole 23, the strength can be made to be a certain level or more in fixing to the substrate base material 20 by press-fitting.

[0065] Further, according to the holding device 2 of the present embodiment, the ceramic sintered body 50 is joined to the substrate base material 20 by press-fitting into the through hole 23 without using a joining material. Thereby, in the environment where the holding device 2 is used, generation of foreign matters derived from the joining material and contamination of the substrate W due to trace components contained in the joining material can be suppressed.

[0066] Further, according to the holding device 2 of the present embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body 50 is greater than either the average linear thermal expansion coefficient of the material forming the substrate base material 20 or the average linear thermal expansion coefficient of the material forming the base 10. Thus, when the temperature of the holding device 2 rises during use of the holding device 2, the ceramic sintered body 50 receives compressive stress from the inner walls of the through holes 23 and the flow paths 11, so that the adhesion between the ceramic sintered body 50 and the inner walls of the through holes 23 and the flow paths 11 can be improved. Therefore, since the inert gas flowing through the flow path 11 has difficulty passing between the base 10 and the ceramic sintered body 50, the occurrence of abnormal discharge can be further suppressed.

[0067] <Third Embodiment> FIG. 11 is an enlarged cross-sectional view of the holding device 3 of the third embodiment. The holding device 3 of the third embodiment has a different method of fixing the ceramic sintered body as compared with the holding device 1A (FIG. 3) of the first embodiment.

[0068] The holding device 3 of the third embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 60, a joint portion 41, and a conductive film 42. The holding device 3 is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0069] The ceramic sintered body 60 is a ceramic sintered body disposed inside the through-hole 23 of the substrate base material 20. The ceramic sintered body 60 has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. Compared with the ceramic sintered body 30A of the first embodiment, the ceramic sintered body 60 is larger in size with respect to the through-hole 23. Specifically, the difference between the outer diameter of the ceramic sintered body 60 and the inner size of the through-hole 23 of the substrate base material 20 is 0.005 mm to 0.05 mm, and a part of the outer diameter of the ceramic sintered body 60 is larger than the inner diameter of the through-hole 23 of the substrate base material 20. In the holding device 3, the ceramic sintered body 60 is not fixed to the substrate base material 20 by a bonding material. That is, the holding device 3 does not have the adhesive layer 33 of the holding device 1A of the first embodiment between the substrate base material 20 and the ceramic sintered body 60. In the present embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body 60 is larger than either the average linear thermal expansion coefficient of the material forming the substrate base material 20 or the average linear thermal expansion coefficient of the material forming the base 10.

[0070] In the manufacturing method of the holding device 3 of the present embodiment, in the fixing step following the protrusion forming step, the ceramic sintered body 60 is fixed to the aluminum nitride plate P20 by shrink fitting. Specifically, for example, after heating the base 10 and the aluminum nitride plate P20 to a temperature of 100°C or higher, the ceramic sintered body 60 at room temperature or below room temperature is inserted into the through-hole 23 through the opening 22. After the ceramic sintered body 60 is inserted into the through-hole 23, when the temperature of the aluminum nitride plate P20 decreases, the aluminum nitride plate P20 contracts, and the side surface of the ceramic sintered body 60 receives a compressive stress from the contracting aluminum nitride plate P20. Thereby, the aluminum nitride plate P20 and the ceramic sintered body 60 are in close contact.

[0071] According to the holding device 3 of the present embodiment described above, the ceramic sintered body 60 having the porous portion 31 and the cylindrical dense portion 32 disposed outside the porous portion 31 has an end portion 302 reaching inside the flow path 11 inside the base 10. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, the ceramic sintered body 60 is disposed inside the through hole 23 via the opening 22. Thereby, the ceramic sintered body 60 can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in designing the holding device 3 including the ceramic sintered body 60 that suppresses abnormal discharge can be improved.

[0072] Further, according to the holding device 3 of the present embodiment, the ceramic sintered body 60 has a dense portion 32 formed so as to cover the outer peripheral portion of the porous portion 31 having a relatively large porosity. Thereby, since the size of the ceramic sintered body 60 can be made to match the size inside the through hole 23 with high precision, the strength can be made to be a certain level or more in fixing to the substrate base material 20 by shrink fitting.

[0073] Further, according to the holding device 3 of the present embodiment, the ceramic sintered body 60 is joined to the substrate base material 20 by shrink fitting into the through hole 23 without using a joining material. Thereby, in the environment in which the holding device 3 is used, generation of foreign matter derived from the joining material and contamination of the substrate W by trace components contained in the joining material can be suppressed.

[0074] Further, according to the holding device 3 of the present embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body 60 is greater than both the average linear thermal expansion coefficient of the material forming the substrate base material 20 and the average linear thermal expansion coefficient of the material forming the base 10. Thus, when the temperature of the holding device 3 rises during use of the holding device 3, the ceramic sintered body 60 receives compressive stress from the inner walls of the through holes 23 and the flow paths 11, so that the adhesion between the ceramic sintered body 60 and the inner walls of the through holes 23 and the flow paths 11 can be improved. Therefore, since the inert gas flowing through the flow path 11 is less likely to pass between the base 10 and the ceramic sintered body 60, the occurrence of abnormal discharge can be further suppressed.

[0075] <Fourth Embodiment> FIG. 12 is an enlarged cross-sectional view of the holding device 1B of the fourth embodiment. The holding device 1B of the fourth embodiment has a different shape of the ceramic sintered body as compared with the holding device 1A (FIG. 3) of the first embodiment.

[0076] The holding device 1B of the fourth embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30B, a joint portion 41, and a conductive film 42. The holding device 1B is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0077] The ceramic sintered body 30B is disposed inside the through hole 23 of the substrate base material 20. The minus-side end portion 302 in the z-axis direction of the ceramic sintered body 30B reaches inside the flow path 11. The ceramic sintered body 30B has insulating properties by being formed of a material mainly composed of alumina.

[0078] The ceramic sintered body 30B has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In the present embodiment, the ceramic sintered body 30B and the substrate base material 20 are joined by an adhesive layer 33. As shown in FIG. 12, the end portion 301 of the ceramic sintered body 30B on the side opposite to the base 10 (the plus side in the z-axis direction) is located on the mounting surface 21 side with respect to the opening surface 20e. Thereby, an annular groove 20h is formed between the inside of the opening 22 having a shape recessed with respect to the mounting surface 21 and the outside of the dense portion 32 of the ceramic sintered body 30B.

[0079] According to the holding device 1B of the present embodiment described above, in the ceramic sintered body 30B, the end portion 302 reaches inside the flow path 11 inside the base 10. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, since the ceramic sintered body 30B is disposed inside the through hole 23 through the opening 22, the ceramic sintered body 30B can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in the design of the holding device 1B can be improved.

[0080] Further, according to the holding device 1B of the present embodiment, a groove 20h is formed around the end portion 302 of the ceramic sintered body 30B. Since an air flow through the porous portion 31 of the ceramic sintered body 30B flows through the groove 20h, for example, etching residues generated from the substrate W in an etching process using plasma can be collected in the groove 20h by the air flow through the porous portion 31. Further, since the distance between the substrate W placed on the mounting surface 21 and the ceramic sintered body 30B is smaller than that of the holding device 1A of the first embodiment, the occurrence of abnormal discharge in the etching process using plasma can be suppressed.

[0081] <Fifth Embodiment> FIG. 13 is an enlarged cross-sectional view of the holding device 1C of the fifth embodiment. The holding device 1C of the fifth embodiment has a different shape of the ceramic sintered body as compared with the holding device 1A (FIG. 3) of the first embodiment.

[0082] The holding device 1C of the fifth embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30C, a joint portion 41, and a conductive film 42. The holding device 1C is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0083] The ceramic sintered body 30C is disposed inside the through-hole 23 of the substrate base material 20. The minus-side end 302 of the ceramic sintered body 30C in the z-axis direction reaches inside the flow path 11. The ceramic sintered body 30C has insulation by being formed of a material mainly composed of alumina.

[0084] The ceramic sintered body 30C has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In the present embodiment, the ceramic sintered body 30C and the substrate base material 20 are joined by an adhesive layer 33. As shown in FIG. 13, the end 301 of the ceramic sintered body 30C on the side opposite to the base 10 (the plus side in the z-axis direction) is located on the mounting surface 21 side rather than the opening surface 20e, and the end surface of the end 301 has a mountain-shaped curved surface shape. Thereby, an annular groove 20i is formed between the inside of the opening 22 having a shape recessed with respect to the mounting surface 21 and the outside of the dense portion 32 of the ceramic sintered body 30C.

[0085] According to the holding device 1C of the present embodiment described above, in the interior of the base 10, the end portion 302 of the ceramic sintered body 30C reaches inside the flow path 11. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, since the ceramic sintered body 30C is disposed inside the through hole 23 via the opening 22, the ceramic sintered body 30C can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in the design of the holding device 1C can be improved.

[0086] Further, according to the holding device 1C of the present embodiment, a groove 20i is formed around the end portion 302 of the ceramic sintered body 30C. Since an air flow through the porous portion 31 of the ceramic sintered body 30C flows through the groove 20i, for example, etching residues generated from the substrate W in an etching process using plasma can be collected in the groove 20i by the air flow through the porous portion 31. In addition, since the distance between the substrate W placed on the placement surface 21 and the ceramic sintered body 30C is smaller than that of the holding device 1A of the first embodiment, the occurrence of abnormal discharge in the etching process using plasma can be suppressed.

[0087] <Sixth Embodiment> FIG. 14 is an enlarged cross-sectional view of the holding device 1D of the sixth embodiment. The holding device 1D of the sixth embodiment has a different shape of the ceramic sintered body as compared with the holding device 1A (FIG. 3) of the first embodiment.

[0088] The holding device 1D of the sixth embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30D, a joint portion 41, and a conductive film 42. The holding device 1D is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0089] The ceramic sintered body 30D is disposed inside the through hole 23 of the substrate base material 20. The minus-side end 302 in the z-axis direction of the ceramic sintered body 30D reaches inside the flow path 11. The ceramic sintered body 30D has insulation by being formed of a material mainly composed of alumina.

[0090] The ceramic sintered body 30D has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In the present embodiment, the ceramic sintered body 30D and the substrate base material 20 are joined by an adhesive layer 33. In the present embodiment, the end 301 of the ceramic sintered body 30D is located on the base 10 side with respect to the opening surface 20e. As shown in FIG. 14, the porous portion 31 of the ceramic sintered body 30D has a valley-shaped curved surface shape on the end surface of the end 301 on the side opposite to the base 10 (plus side in the z-axis direction).

[0091] In the manufacturing method of the holding device 1D of the present embodiment, among the manufacturing methods of the holding device 1A of the first embodiment, the order of the protrusion forming step of forming a plurality of protrusions 20d on the aluminum nitride plate P20 and the fixing step of fixing the ceramic sintered body 30A to the aluminum nitride plate P20 is switched. Specifically, after performing the fixing step of fixing the ceramic sintered body 30D to the aluminum nitride plate P20, the protrusion forming step of forming a plurality of protrusions 20d on the aluminum nitride plate P20 is performed. When the protrusions 20d are formed using sandblasting in the protrusion forming step, in the ceramic sintered body 30D already fixed to the aluminum nitride plate P20, the end surface of the end 301 of the porous portion 31 having relatively low material strength is polished by sandblasting to have a valley-shaped curved surface shape.

[0092] According to the holding device 1D of the present embodiment described above, in the interior of the base 10, the end 302 of the ceramic sintered body 30D reaches inside the flow path 11. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, since the ceramic sintered body 30D is disposed inside the through hole 23 via the opening 22, the ceramic sintered body 30D can be attached to the substrate base material 20 regardless of the shape of the flow path 11 provided in the base 10. Therefore, the degree of freedom in the design of the holding device 1C can be improved.

[0093] Further, according to the holding device 1D of the present embodiment, the end face of the end 301 on the side opposite to the base 10 of the porous portion 31 of the ceramic sintered body 30C has a valley-shaped curved surface. As described above, the valley-shaped curved surface of the porous portion 31 is processed when forming the plurality of protrusions 20d on the aluminum nitride plate P20 using sandblasting in the manufacturing method of the holding device 1D. Thereby, a part of the steps included in the manufacturing method of the holding device 1D can be simplified.

[0094] <Seventh Embodiment> FIG. 15 is an enlarged cross-sectional view of the holding device 1E of the seventh embodiment. The holding device 1E of the seventh embodiment has a different shape of the ceramic sintered body as compared with the holding device 1A (FIG. 3) of the first embodiment.

[0095] The holding device 1E of the seventh embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30E, a joint portion 41, and a conductive film 42. The holding device 1E is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0096] The ceramic sintered body 30E is disposed inside the through hole 23 of the substrate base material 20. The end 302 on the minus side in the z-axis direction of the ceramic sintered body 30E reaches inside the flow path 11. The ceramic sintered body 30E has insulating properties by being formed of a material mainly composed of alumina.

[0097] The ceramic sintered body 30E has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In the present embodiment, the ceramic sintered body 30E and the substrate base material 20 are joined by an adhesive layer 33. In the cross section shown in FIG. 15, the ceramic sintered body 30E is formed so that the width becomes smaller as it goes from the mounting surface 21 side toward the base 10 side.

[0098] According to the holding device 1E of the present embodiment described above, in the base 10, the end portion 302 of the ceramic sintered body 30E reaches inside the flow path 11. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, since the ceramic sintered body 30E is disposed inside the through hole 23 through the opening 22, the ceramic sintered body 30E can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in the design of the holding device 1E can be improved.

[0099] Further, according to the holding device 1E of the present embodiment, the ceramic sintered body 30E is formed so that the width becomes smaller as it goes from the mounting surface 21 side toward the base 10 side. Thereby, when the substrate base material 20 and the ceramic sintered body 30E are joined by the adhesive layer 33, the adhesion between the inside of the through hole 23 and the outside of the ceramic sintered body 30E can be improved. Therefore, leakage of the inert gas in the adhesive layer 33 can be suppressed.

[0100] <Eighth Embodiment> FIG. 16 is an enlarged cross-sectional view of the holding device 1F of the eighth embodiment. The holding device 1F of the eighth embodiment is different from the holding device 1A (FIG. 3) of the first embodiment in that communication holes are formed in the porous portion of the ceramic sintered body to communicate the inside of the flow path and the outside of the holding device.

[0101] The holding device 1F of the eighth embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30F, a joint portion 41, and a conductive film 42. The holding device 1F is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0102] The ceramic sintered body 30F is disposed inside the through-hole 23 of the substrate base material 20. The minus-side end 302 in the z-axis direction of the ceramic sintered body 30F reaches inside the flow path 11. The ceramic sintered body 30F has insulation properties by being formed of a material mainly composed of alumina.

[0103] The ceramic sintered body 30F has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In this embodiment, the ceramic sintered body 30F and the substrate base material 20 are joined by an adhesive layer 33. The porous portion 31 of the ceramic sintered body 30F has a communication hole 31a that communicates the inside of the flow path 11 and the outside of the holding device 1F, as shown in FIG. 16. In the ceramic sintered body 30F of this embodiment, the inner diameter of the communication hole 31a is 0.1 mm or less.

[0104] According to the holding device 1F of this embodiment described above, in the base 10, the end 302 of the ceramic sintered body 30F reaches inside the flow path 11. Thereby, since the inert gas flowing through the flow path 11 is suppressed from contacting the conductive film 42, abnormal discharge can be suppressed. Further, since the ceramic sintered body 30F is disposed inside the through-hole 23 via the opening 22, the ceramic sintered body 30F can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in the design of the holding device 1F can be improved.

[0105] Further, according to the holding device 1F of the present embodiment, in the ceramic sintered body 30F, a communication hole 31a that communicates the inside of the flow path 11 and the outside of the holding device 1F is formed in the porous portion 31. Thereby, the inert gas easily moves between the inside of the flow path 11 and the outside of the holding device 1F through the communication hole 31a. Further, since the inner diameter of the communication hole 31a is 0.1 mm or less, it is possible to suppress the occurrence of abnormal discharge through the inert gas passing through the communication hole 31a. Thereby, while suppressing the occurrence of abnormal discharge, it is possible to increase the flow rate of the inert gas passing through the ceramic sintered body 30F.

[0106] <Embodiment 9> FIG. 17 is an enlarged cross-sectional view of the holding device 1G of the ninth embodiment. The holding device 1G of the ninth embodiment is different from the holding device 1A (FIG. 3) of the first embodiment in that the porous portion of the ceramic sintered body has a recess.

[0107] The holding device 1G of the ninth embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30G, a joint portion 41, and a conductive film 42. The holding device 1G is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0108] The ceramic sintered body 30G is disposed inside the through hole 23 of the substrate base material 20. The minus-side end portion 302 in the z-axis direction of the ceramic sintered body 30G reaches the inside of the flow path 11. The ceramic sintered body 30G has insulating properties by being formed of a material mainly composed of alumina.

[0109] The ceramic sintered body 30G has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In the present embodiment, the ceramic sintered body 30G and the substrate base material 20 are joined by an adhesive layer 33. As shown in FIG. 17, the porous portion 31 of the ceramic sintered body 30G has a recess 31b formed at the minus-side end portion in the z-axis direction.

[0110] According to the holding device 1G of the present embodiment described above, in the interior of the base 10, the end portion 302 of the ceramic sintered body 30G reaches inside the flow path 11. As a result, contact between the inert gas flowing through the flow path 11 and the conductive film 42 is suppressed, so that abnormal discharge can be suppressed. Further, since the ceramic sintered body 30G is disposed inside the through hole 23 via the opening 22, the ceramic sintered body 30G can be attached to the substrate base material 20 regardless of the shape of the flow path 11 provided in the base 10. Therefore, the degree of freedom in the design of the holding device 1G can be improved.

[0111] Further, according to the holding device 1G of the present embodiment, in the porous portion 31 of the ceramic sintered body 30G, a recessed portion 31b is formed at the minus-side end portion in the z-axis direction. As a result, the pressure loss of the inert gas passing through the porous portion 31 becomes smaller than in the case of the first embodiment, so that the inert gas easily moves between the inside of the flow path 11 and the outside of the holding device 1G. Therefore, while suppressing the occurrence of abnormal discharge, the flow rate of the inert gas passing through the ceramic sintered body 30G can be increased.

[0112] <Tenth Embodiment> FIG. 18 is an enlarged cross-sectional view of the holding device 1H of the tenth embodiment. The holding device 1H of the tenth embodiment is different from the holding device 1A (FIG. 3) of the first embodiment in that the porous portion of the ceramic sintered body has a recessed portion.

[0113] The holding device 1H of the tenth embodiment includes a base 10, a substrate base material 20, a ceramic sintered body 30H, a joint portion 41, and a conductive film 42. The holding device 1H is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction.

[0114] The ceramic sintered body 30H is disposed inside the through hole 23 of the substrate base material 20. The minus-side end portion 302 of the ceramic sintered body 30H in the z-axis direction reaches inside the flow path 11. The ceramic sintered body 30H has insulating properties by being formed of a material mainly composed of alumina.

[0115] The ceramic sintered body 30H has a porous portion 31 and a cylindrical dense portion 32 disposed outside the porous portion 31. In the present embodiment, the ceramic sintered body 30H and the substrate base material 20 are joined by an adhesive layer 33. As shown in FIG. 18, the porous portion 31 of the ceramic sintered body 30H has a recessed portion 31c formed at the plus-side end in the z-axis direction.

[0116] According to the holding device 1H of the present embodiment described above, the ceramic sintered body 30H has its end portion 302 reaching inside the flow path 11 inside the base 10. As a result, contact between the inert gas flowing through the flow path 11 and the conductive film 42 is suppressed, so that abnormal discharge can be suppressed. Further, since the ceramic sintered body 30H is disposed inside the through hole 23 via the opening 22, the ceramic sintered body 30H can be attached to the substrate base material 20 regardless of the shape of the flow path 11 of the base 10. Therefore, the degree of freedom in the design of the holding device 1H can be improved.

[0117] Further, according to the holding device 1H of the present embodiment, the porous portion 31 of the ceramic sintered body 30H has a recessed portion 31c formed at the plus-side end in the z-axis direction. As a result, the pressure loss of the inert gas passing through the porous portion 31 becomes smaller than in the case of the first embodiment, so that the inert gas easily moves between the inside of the flow path 11 and the outside of the holding device 1H. Therefore, while suppressing the occurrence of abnormal discharge, the flow rate of the inert gas passing through the ceramic sintered body 30H can be increased.

[0118] <Modifications of the present embodiment> The present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the gist thereof. For example, the following modifications are possible.

[0119] [Modification 1] In the above-described embodiment, the holding device is an electrostatic chuck that adsorbs and holds the substrate W by electrostatic attraction. The technical field to which the holding device is applied is not limited to this. It is also applicable to technical fields where it is necessary to maintain the state of holding an object to be held including a substrate.

[0120] [Modification Example 2] In the above-described embodiment, the holding device is provided with a base 10, a base material 20 for the substrate, a ceramic sintered body, a joint portion 41, and a conductive film 42. However, the configuration of the holding device is not limited to this. For example, a layer different from the joint portion 41 and the conductive film 42 may be disposed between the base 10 and the base material 20 for the substrate. Further, each of the base 10 and the base material 20 for the substrate is assumed to be a single plate-like member as shown in FIG. 2 and the like, but may be formed by laminating a plurality of plate-like members.

[0121] [Modification Example 3] In the above-described embodiment, in the cross section including the central axis of the holding device, the length of the ceramic sintered body in the stacking direction of the base and the base material for the substrate is set to be 1.5 times or more the thickness of the base material for the substrate in the stacking direction. The length of the ceramic sintered body may be smaller than 1.5 times the thickness of the base material for the substrate in the stacking direction. In the portion where the through hole and the flow path are connected, it is sufficient that the conductive film is covered with the ceramic sintered body so that the inert gas hardly contacts the conductive film.

[0122] [Modification Example 4] In the above-described embodiment, the ceramic sintered body was arranged on the base side with respect to the placement surface or the reference surface. The position where the ceramic sintered body is arranged is not limited to this. By arranging the ceramic sintered body on the base side with respect to the placement surface or the reference surface, it becomes difficult for the ceramic sintered body and the substrate to come into contact with each other, so the design tolerance of the holding device can be made relatively large. Also, the position of the end face on the plus side in the z-axis direction of the ceramic sintered body was assumed to be substantially on the same plane as the opening surface 20e. However, the position of the end face of the end portion on the plus side in the z-axis direction of the ceramic sintered body may be located inside the through hole. For example, the ceramic sintered body may be buried inside the through hole.

[0123] [Modification Example 5] In the above-described embodiment, the average linear thermal expansion coefficient of the material forming the ceramic sintered body was made larger than either the average linear thermal expansion coefficient of the material forming the substrate base material 20 and the average linear thermal expansion coefficient of the material forming the base 10. However, the magnitude relationship of the average linear thermal expansion coefficients is not limited to this. By making the average linear thermal expansion coefficient of the material forming the ceramic sintered body larger than either the average linear thermal expansion coefficient of the material forming the substrate base material 20 and the average linear thermal expansion coefficient of the material forming the base 10, when the temperature of the holding device rises, the ceramic sintered body receives compressive stress from the inner walls of the through hole 23 and the flow path 11, so the adhesion between the ceramic sintered body and the inner walls of the through hole 23 and the flow path 11 can be improved.

[0124] [Modification Example 6] In the above-described embodiment, the opening portion of the substrate base material 20 has a shape recessed with respect to the reference surface 20c as shown in FIG. 3 and the like. The shape of the opening portion is not limited to this, and it is sufficient that an opening into which the ceramic sintered body can be inserted is formed.

[0125] [Modification Example 7] In the above-described embodiment, a stepped surface 10a is formed in the flow path 11 of the base 10, and the ceramic sintered body is arranged so as to contact the stepped surface 10a. However, the stepped surface may not be provided.

[0126] FIG. 19 is an enlarged cross-sectional view of a modified example of the holding device 1A of the first embodiment. In the holding device 1A shown in FIG. 19, among the flow paths 11, the second flow path 11c is formed larger than the first flow path 11b and the second flow path 11d so that the inside can insert the ceramic sintered body 30A. That is, a stepped surface that contacts the end surface of the minus side end 302 of the ceramic sintered body 30A in the z-axis direction is not formed. In such a case, by making the length L of the ceramic sintered body 30A longer than the thickness D of the substrate base material 20 and pushing the end surface of the plus side end 301 of the ceramic sintered body 30A in the z-axis direction closer to the base 10 side than the opening surface 20e, it is possible to suppress the inert gas from contacting the conductive film 42. Therefore, the degree of freedom in designing the holding device 1A provided with the ceramic sintered body 30A for suppressing abnormal discharge can be improved.

[0127] [Modification Example 8] In each of the fourth to sixth, eighth to tenth embodiments, it is assumed that the ceramic sintered body and the substrate base material 20 are joined by the adhesive layer 33. In these embodiments, the ceramic sintered body and the substrate base material 20 may not be joined by a joining material. They may be fixed by press-fitting used in the manufacturing method of the holding device 2 of the second embodiment or shrink fitting used in the manufacturing method of the holding device 3 of the third embodiment.

[0128] As described above, the present aspect has been described based on the embodiments and modification examples. However, the embodiments of the above-described aspects are for facilitating the understanding of the present aspect and do not limit the present aspect. The present aspect can be changed and improved without departing from the spirit and scope of the claims, and equivalents thereof are included in the present aspect. Also, if the technical features are not described as essential in this specification, they can be deleted as appropriate.

[0129] <Application Example 1> A holding device for holding a substrate, A base having a flow path through which a fluid flows and having a flow path including a bent bent portion inside, A plate-shaped substrate base material disposed on the base, having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base with the opening. A ceramic sintered body disposed inside the through hole, having a porous portion and a cylindrical dense portion disposed outside the porous portion. The end of the ceramic sintered body reaches inside the flow path. Holding device. <Application Example 2> The holding device according to Application Example 1, wherein the substrate base material and the ceramic sintered body are not joined by a joining material. Holding device. <Application Example 3> The holding device according to Application Example 1 or Application Example 2, wherein the ceramic sintered body is disposed closer to the base than the placement surface, in a cross section including the central axis of the holding device, the length of the ceramic sintered body in the stacking direction of the base and the substrate base material is 1.5 times or more the thickness of the substrate base material in the stacking direction. Holding device. <Application Example 4> The holding device according to any one of Application Examples 1 to 3, wherein the substrate base material has a reference surface and a plurality of protrusions erected on the reference surface, the placement surface is formed by the tip surfaces of the respective plurality of protrusions, and the ceramic sintered body is disposed closer to the base than the reference surface. Holding device. <Application Example 5> The holding device according to any one of Application Examples 1 to 4, wherein the opening has a shape recessed with respect to the placement surface, and an opening surface located closer to the base than the placement surface is formed. The end portion of the ceramic sintered body on the side opposite to the base is located on the placement surface side rather than the opening surface. Holding device. <Application Example 6> The holding device according to any one of Application Examples 1 to 5, The end face of the end portion of the ceramic sintered body on the side opposite to the base has a mountain-shaped curved surface shape. Holding device. <Application Example 7> The holding device according to any one of Application Examples 1 to 6, The end face of the end portion of the porous portion on the side opposite to the base has a valley-shaped curved surface shape. Holding device. <Application Example 8> The holding device according to any one of Application Examples 1 to 7, The base material for the substrate and the ceramic sintered body are joined by a joining material. In a cross section including the central axis of the holding device, The ceramic sintered body is formed such that its width decreases from the placement surface side toward the base side. Holding device. <Application Example 9> The holding device according to any one of Application Examples 1 to 8, The porous portion has communication holes that communicate the inside of the flow path with the outside of the holding device. The inner diameter of the communication holes is 0.1 mm or less. Holding device. <Application Example 10> The holding device according to any one of Application Examples 1 to 9, The porous portion has recessed portions at at least one of the end portion on the base side and the end portion on the side opposite to the base. Holding device. <Application Example 11> The holding device according to any one of Application Examples 1 to 10, The base material for the substrate is formed of a material mainly composed of aluminum nitride or alumina, The base is a sintered body formed of a material mainly composed of silicon carbide, or a sintered body formed of a material containing silicon carbide and having a thermal conductivity of 70 W / mK or more, Holding device. <Application Example 12> A holding device according to any one of Application Examples 1 to 11, The average linear thermal expansion coefficient of the material forming the ceramic sintered body is greater than either the average linear thermal expansion coefficient of the material forming the base material for the substrate and the average linear thermal expansion coefficient of the material forming the base, Holding device. <Application Example 13> A holding device according to any one of Application Examples 1 to 12, The ceramic sintered body is formed of a material mainly composed of alumina, Holding device. <Application Example 14> A base having a flow path through which a fluid flows and including a bent portion inside the flow path, A plate-shaped base material for the substrate disposed on the base, the base material for the substrate having a mounting surface on which the substrate is mounted, an opening formed in the mounting surface, and a through hole that communicates the flow path of the base and the opening, A ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion, An end portion of the ceramic sintered body reaches inside the flow path. A method for manufacturing a holding device, A preparation step of preparing the base, the base material for the substrate, and the ceramic sintered body, A joining step of joining the base and the base material for the substrate, After the joining step, through the opening of the base material for the substrate, insert the ceramic sintered body inside the through hole, and fix the ceramic sintered body to the base material for the substrate. A fixing step is provided, characterized by A method for manufacturing a holding device. <Application Example 15> A method for manufacturing a holding device according to Application Example 14, wherein In the preparation step, a conductive film is prepared. In the joining step, the base material for the substrate and the base are joined such that the conductive film is positioned between the base material for the substrate and the base. A method for manufacturing a holding device.

Explanation of Reference Numerals

[0130] 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 2, 3... Holding device 10... Base 11... Flow path 11a... Bent portion 20... Base material for substrate 20c... Reference plane 20d... Protrusion 20e... Opening surface 20f... Tip surface 21... Mounting surface 22... Opening 23... Through hole 30A, 30B, 30C, 30D, 30E, 30F, 30G, 30H, 50, 60... Ceramic sintered body 301, 302... (Ends of the ceramic sintered body) 31... Porous part 31a... Communication hole (of the porous part) 31b, 31c... Recessed part 32... Dense part 42... Conductive film C1... Central axis L... Length of the ceramic sintered body D... Thickness of the base material for the substrate

Claims

1. A holding device for holding a substrate, comprising: a base having therein a flow path through which a fluid flows and including a bent portion; a plate-shaped substrate base material disposed on the base, the substrate base material having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base with the opening; a ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion; the end of the ceramic sintered body reaching inside the flow path; the opening having a shape recessed with respect to the placement surface, and an opening surface formed on the base side with respect to the placement surface; the end of the ceramic sintered body on the side opposite to the base being located on the placement surface side with respect to the opening surface; the end face of the end of the ceramic sintered body on the side opposite to the base having a mountain-shaped curved surface shape, characterized in that. Holding device.

2. A holding device for holding a substrate, comprising: a base having therein a flow path through which a fluid flows and including a bent portion; a plate-shaped substrate base material disposed on the base, the substrate base material having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base with the opening; a ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion; the end of the ceramic sintered body reaching inside the flow path; the end face of the end of the porous portion on the side opposite to the base having a valley-shaped curved surface shape, characterized in that. Holding device.

3. A holding device for holding a substrate, comprising: a base having therein a flow path through which a fluid flows and including a bent portion; a plate-shaped substrate base material disposed on the base, the substrate base material having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base with the opening; a ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion; The end of the ceramic sintered body reaches inside the flow path. The porous portion has a communication hole that communicates the inside of the flow path and the outside of the holding device. The inner diameter of the communication hole is 0.1 mm or less. A holding device characterized by this. Holding device. A holding device for holding a substrate, comprising: A base having a flow path through which a fluid flows and including a bent portion, A plate-shaped substrate base material disposed on the base, having a mounting surface on which the substrate is mounted, an opening formed in the mounting surface, and a through hole that communicates the flow path of the base and the opening. A substrate base material having A ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion. The end of the ceramic sintered body reaches inside the flow path. The substrate base material is formed of a material mainly composed of aluminum nitride or alumina. The base is a sintered body formed of a material mainly composed of silicon carbide, or a sintered body formed of a material containing silicon carbide and having a thermal conductivity of 70 W / mK or more. A holding device characterized by this. Holding device. A holding device for holding a substrate, comprising: A base having a flow path through which a fluid flows and including a bent portion, A plate-shaped substrate base material disposed on the base, having a mounting surface on which the substrate is mounted, an opening formed in the mounting surface, and a through hole that communicates the flow path of the base and the opening. A substrate base material having A ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion. The end of the ceramic sintered body reaches inside the flow path. The average linear thermal expansion coefficient of the material forming the ceramic sintered body is larger than either the average linear thermal expansion coefficient of the material forming the substrate base material or the average linear thermal expansion coefficient of the material forming the base. A holding device characterized by this. Holding device. The holding device according to any one of claims 2 to 5, comprising: The opening has a shape recessed with respect to the mounting surface, and an opening surface located closer to the base side than the mounting surface is formed. The end portion of the ceramic sintered body on the side opposite to the base is located on the mounting surface side rather than on the opening surface side, characterized in that Holding device.

7. The holding device according to any one of Claims 1 to 5, characterized in that The substrate base material and the ceramic sintered body are not joined by a joining material. Holding device.

8. The holding device according to any one of Claims 1 to 5, characterized in that The ceramic sintered body is disposed on the base side rather than on the mounting surface side. In a cross section including the central axis of the holding device, The length of the ceramic sintered body in the stacking direction of the base and the substrate base material is 1.5 times or more the thickness of the substrate base material in the stacking direction, characterized in that Holding device.

9. The holding device according to any one of Claims 1 to 5, characterized in that The substrate base material has a reference surface and a plurality of protrusions erected on the reference surface. The mounting surface is formed by the tip surfaces of the plurality of protrusions. The ceramic sintered body is disposed on the base side rather than on the reference surface side, characterized in that Holding device.

10. The holding device according to any one of Claims 1 to 5, characterized in that The substrate base material and the ceramic sintered body are joined by a joining material. In a cross section including the central axis of the holding device, The ceramic sintered body is formed such that the width decreases from the mounting surface side toward the base side, characterized in that Holding device.

11. The holding device according to any one of Claims 1 to 5, characterized in that The porous portion has a recessed portion at at least one of the end portion on the base side and the end portion on the side opposite to the base. Holding device.

12. The holding device according to any one of Claims 1 to 5, characterized in that The ceramic sintered body is formed of a material mainly composed of alumina. Holding device.

13. A base having a flow path inside which a flow path including a bent bent portion through which a fluid flows, A plate-shaped substrate base material disposed on the base, having a mounting surface on which a substrate is mounted, an opening formed in the mounting surface, and a through hole that communicates the flow path of the base with the opening. A ceramic sintered body disposed inside the through-hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion, and a ceramic sintered body, A method for manufacturing a holding device, wherein an end portion of the ceramic sintered body reaches inside the flow path, A preparation step of preparing the base, the substrate base material, and the ceramic sintered body, A joining step of joining the base and the substrate base material, After the joining step, through the opening of the substrate base material, inserting the ceramic sintered body inside the through-hole, and a fixing step of fixing the ceramic sintered body to the substrate base material, The opening has a shape recessed with respect to the mounting surface, and an opening surface located on the base side with respect to the mounting surface is formed, An end portion of the ceramic sintered body on the side opposite to the base is located on the mounting surface side with respect to the opening surface, The end face of the end portion of the ceramic sintered body on the side opposite to the base has a mountain-shaped curved surface shape, A method for manufacturing a holding device.

14. A base having a flow path through which a fluid flows and including a bent bent portion inside, A plate-shaped substrate base material disposed on the base, the substrate base material having a mounting surface on which a substrate is mounted, an opening formed in the mounting surface, and a through-hole that communicates the flow path of the base and the opening, A ceramic sintered body disposed inside the through-hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion, and a ceramic sintered body, A method for manufacturing a holding device, wherein an end portion of the ceramic sintered body reaches inside the flow path, A preparation step of preparing the base, the substrate base material, and the ceramic sintered body, A joining step of joining the base and the substrate base material, After the joining step, through the opening of the substrate base material, inserting the ceramic sintered body inside the through-hole, and a fixing step of fixing the ceramic sintered body to the substrate base material, The end face of the end portion of the porous portion on the side opposite to the base has a valley-shaped curved surface shape, A method for manufacturing a holding device.

15. A base having a flow path through which a fluid flows and including a bent bent portion inside, A plate-shaped base material for a substrate disposed on the base, the base material for the substrate having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base and the opening. A ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion. A method for manufacturing a holding device, wherein an end portion of the ceramic sintered body reaches inside the flow path. A preparation step of preparing the base, the base material for the substrate, and the ceramic sintered body. A joining step of joining the base and the base material for the substrate. After the joining step, a fixing step of inserting the ceramic sintered body inside the through hole through the opening of the base material for the substrate and fixing the ceramic sintered body to the base material for the substrate. The porous portion has a communication hole that communicates the inside of the flow path and the outside of the holding device. The inner diameter of the communication hole is 0.1 mm or less. A method for manufacturing a holding device.

16. A base having a flow path through which a fluid flows and including a bent bent portion inside, A plate-shaped base material for a substrate disposed on the base, the base material for the substrate having a placement surface on which the substrate is placed, an opening formed in the placement surface, and a through hole that communicates the flow path of the base and the opening. A ceramic sintered body disposed inside the through hole, the ceramic sintered body having a porous portion and a cylindrical dense portion disposed outside the porous portion. A method for manufacturing a holding device, wherein an end portion of the ceramic sintered body reaches inside the flow path. A preparation step of preparing the base, the base material for the substrate, and the ceramic sintered body. A joining step of joining the base and the base material for the substrate. After the joining step, a fixing step of inserting the ceramic sintered body inside the through hole through the opening of the base material for the substrate and fixing the ceramic sintered body to the base material for the substrate. The base material for the substrate is formed of a material mainly composed of aluminum nitride or alumina. The base is a sintered body formed of a material mainly composed of silicon carbide or a sintered body formed of a material containing silicon carbide and having a thermal conductivity of 70 W / mK or more. Method for manufacturing a holding device.

17. A base having a flow path inside which a flow path through which a fluid flows and includes a bent portion, A plate-shaped substrate base material disposed on the base, having a mounting surface on which the substrate is mounted, an opening formed in the mounting surface, and a through hole that communicates the flow path of the base and the opening, and a substrate base material having A ceramic sintered body disposed inside the through hole, having a porous portion and a cylindrical dense portion disposed outside the porous portion, and a ceramic sintered body having An end portion of the ceramic sintered body reaches inside the flow path, and a method for manufacturing a holding device, A preparation step of preparing the base, the substrate base material, and the ceramic sintered body, A bonding step of bonding the base and the substrate base material, After the bonding step, through the opening of the substrate base material, inserting the ceramic sintered body inside the through hole and fixing the ceramic sintered body to the substrate base material, and comprising a fixing step, The average linear thermal expansion coefficient of the material forming the ceramic sintered body is characterized by being larger than either the average linear thermal expansion coefficient of the material forming the substrate base material or the average linear thermal expansion coefficient of the material forming the base. Method for manufacturing a holding device.

18. A method for manufacturing a holding device according to any one of claims 13 to 17, In the preparation step, a conductive film is prepared, In the bonding step, the substrate base material and the base are bonded so that the conductive film is positioned between the substrate base material and the base, and is characterized by Method for manufacturing a holding device.

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