Substrate processing apparatus, method for manufacturing semiconductor device, substrate processing method, and program

Abstract

Provided is a feature having a protrusion and comprising: a reaction tube that processes a substrate; a first heating unit that heats the reaction tube; a second heating unit that heats the protrusion; and a heat-insulating member provided to the protrusion.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] In the heat treatment of a substrate in the manufacturing process of a semiconductor device, for example, a vertical substrate processing apparatus is used. In a vertical substrate processing apparatus, a plurality of substrates are arranged and held vertically by a substrate holder, and the substrate holder is carried into a processing chamber. Then, a processing gas is introduced into the processing chamber while the processing chamber is heated, and a thin film forming process is performed on the substrate. For example, it is described in Patent Document 1.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technology capable of improving the uniformity of substrate heating.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a technology including a reaction tube having a protruding portion for processing a substrate, a first heating portion for heating the reaction tube, a second heating portion for heating the protruding portion, and a heat insulating member provided on the protruding portion.

Effects of the Invention

[0006] According to the present disclosure, it becomes possible to improve the uniformity of substrate heating.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Embodiments for Carrying Out the Invention

[0008] Hereinafter, one aspect of the present disclosure will be mainly described with reference to the drawings. Note that the drawings used in the following description are all schematic, and the dimensional relationships of the respective elements shown in the drawings, the ratios of the respective elements, etc. do not necessarily match the actual ones. Also, among the plurality of drawings, the dimensional relationships of the respective elements, the ratios of the respective elements, etc. do not necessarily match.

[0009] (1) Configuration of the substrate processing apparatus The processing furnace of the substrate processing apparatus preferably used in the present disclosure will be described with reference to FIGS. 1 to 7.

[0010] The processing furnace 202 has a heater 206 as a first heating unit (heating device). The heater 206 has a cylindrical shape and is vertically installed by being supported by a heater base 251 as a holding plate. The heater 206 has a cylindrical heat insulator 260. An inlet is formed on the side surface of the heat insulator 260 of the heater 206 so as to avoid the gas introduction pipe 230 as a gas supply side protrusion. Also, an outlet is formed so as to avoid the gas exhaust pipe 231 as a gas exhaust side protrusion.

[0011] Also, as will be described later, a heater element 266 is provided inside the heater 206. Further, an auxiliary heater 271 for the gas introduction pipe, which is a second heating unit, is provided between the heat insulator 260 and the gas introduction pipe 230 at the inlet of the heat insulator 260. The auxiliary heater is also called the second heating unit. Furthermore, an auxiliary heater 272 for the gas exhaust pipe, which is a third heating unit, is provided between the heat insulator 260 and the gas exhaust pipe 231 at the outlet of the heat insulator 260. Further, a heat insulating member 273 is provided in contact with the gas introduction pipe 230, and a heat insulating member 274 is provided in contact with the gas exhaust pipe 231.

[0012] Inside the heater 206, a reaction tube 203 is arranged concentrically with the heater 206 as the first heating part. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end open. A processing chamber 201 is formed in the hollow part of the cylinder of the reaction tube 203, and a substrate 200, which is a semiconductor wafer for example, can be accommodated in a state where it is horizontally aligned and vertically stacked in multiple stages by a boat 217 described later.

[0013] Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of, for example, stainless steel, and is formed in a cylindrical shape with the upper end and the lower end open. The manifold 209 is engaged with the reaction tube 203 and is provided to support it. An O-ring 220a as a seal member is provided between the manifold 209 and the reaction tube 203. Since the manifold 209 is supported by the heater base 251, the reaction tube 203 is in a vertically installed state. The reaction tube 203 and the manifold 209 form a reaction vessel.

[0014] A gas supply unit 300 is connected to the side surface of the reaction tube 203. The gas supply unit 300 supplies gas to the processing chamber 201 via a gas introduction pipe 230. The gas supply unit 300 includes a first gas supply unit 310 and a second gas supply unit 320.

[0015] As shown in FIG. 10(a), the first gas supply unit 310 is provided with a first gas source 312, a mass flow controller (flow control unit) MFC 313, and a valve 314 which is an on-off valve, in order from the upstream direction of the gas supply pipe 311.

[0016] The first gas source 312 is a source of a first gas containing a first element (also referred to as "first element-containing gas"). The first element-containing gas is a raw material gas, that is, one of the process gases. Here, the first element is, for example, silicon (Si). Specifically, it is a chlorosilane raw material gas containing an Si-Cl bond such as hexachlorodisilane (Si2Cl6, abbreviation: HCDS) gas, monochlorosilane (SiH3Cl, abbreviation: MCS) gas, dichlorosilane (SiH2Cl2, abbreviation: DCS), trichlorosilane (SiHCl3, abbreviation: TCS) gas, tetrachlorosilane (SiCl4, abbreviation: STC) gas, octachlorotrisilane (Si3Cl8, abbreviation: OCTS) gas, etc.

[0017] Primarily, the first gas supply unit 310 (also referred to as the silicon-containing gas supply system) is constituted by the gas supply pipe 311, the MFC 313, and the valve 314.

[0018] Among the gas supply pipes 311, a gas supply pipe 315 is connected to the downstream side of the valve 314. In the gas supply pipe 315, an inert gas source 316, an MFC 317, and a valve 318 which is an on-off valve are provided in order from the upstream direction. An inert gas, for example, nitrogen (N2) gas, is supplied from the inert gas source 316.

[0019] Primarily, the first inert gas supply system is constituted by the gas supply pipe 315, the MFC 317, and the valve 318. The inert gas supplied from the inert gas source 316 acts as a purge gas for purging the gas remaining in the reaction tube 203 in the substrate processing step. The first inert gas supply system may be added to the first gas supply unit 310.

[0020] As described in FIG. 10(b), in the gas supply pipe 321, a second gas source 322, an MFC 323 which is a flow controller (flow control unit), and a valve 324 which is an on-off valve are provided in order from the upstream direction.

[0021] The second gas source 322 is a source of a second gas containing a second element (hereinafter also referred to as "second element-containing gas"). The second element-containing gas is one of the process gases. Note that the second element-containing gas may be considered as a reaction gas or a reforming gas.

[0022] Here, the second element-containing gas contains a second element different from the first element. As the second element, for example, any one of oxygen (O), nitrogen (N), and carbon (C) is used. In this embodiment, the second element-containing gas is, for example, a nitrogen-containing gas. Specifically, it is a hydrogen nitride-based gas containing an N-H bond such as ammonia (NH3), diazene (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, etc.

[0023] The second gas supply unit 320 is mainly composed of a gas supply pipe 321, an MFC 323, and a valve 324.

[0024] Among the gas supply pipes 321, a gas supply pipe 325 is connected to the downstream side of the valve 324. In the gas supply pipe 325, an inert gas source 326, an MFC 327, and a valve 328 which is an on-off valve are provided in order from the upstream direction. An inert gas, for example, nitrogen (N2) gas is supplied from the inert gas source 326.

[0025] The second inert gas supply system is mainly composed of a gas supply pipe 325, an MFC 327, and a valve 328. The inert gas supplied from the inert gas source 326 acts as a purge gas for purging the gas remaining in the processing chamber 201 in the substrate processing step. The second inert gas supply system may be added to the second gas supply unit 320.

[0026] In this embodiment, the first gas supply unit 310 and the second gas supply unit 320 may be collectively referred to as a gas supply system. Also, although two gas supply systems are described here as an example, depending on the type of processing, one gas supply system or three or more gas supply systems may be used.

[0027] On the side of the reaction tube 203 opposite to the connection side of the gas introduction tube 230, a gas exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided. On the downstream side, which is the side opposite to the connection side of the gas exhaust pipe 231 with the reaction tube 203, a gas exhaust line 231a is connected via a connection part having a sealing member. A vacuum exhaust device 246 such as a vacuum pump is connected to the gas exhaust line 231a via a pressure sensor 245 and a pressure adjustment device 242, and it is configured to be able to perform vacuum exhaust so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum). Based on the pressure detected by the pressure sensor 245, the pressure in the processing chamber 201 is controlled at a predetermined timing by the pressure adjustment device 242 so as to become a predetermined pressure.

[0028] The gas introduction tube 230 and the gas exhaust pipe 231 provided in the reaction tube 203 are formed of a heat-resistant material such as quartz or silicon carbide, similar to the reaction tube 203.

[0029] Since the gas introduction tube 230 is configured to supply gas into the processing chamber 201, it is arranged on the gas supply side when viewed from the processing chamber 201. Also, since the gas exhaust side protrusion is configured such that the exhaust gas from the inside of the processing chamber 201 is exhausted, it is arranged on the gas exhaust side. In this embodiment, the gas supply side protrusion and the gas exhaust side protrusion are collectively referred to as a protrusion, or either one of them is also called a protrusion.

[0030] Below the manifold 209, a seal cap 219 is provided as a furnace lid that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel, for example, and is formed in a disc shape. An O-ring 220b is provided on the upper surface of the seal cap 219 as a seal member that abuts against the lower end of the manifold 209. On the side of the seal cap 219 opposite to the processing chamber 201, a rotation mechanism 254 for rotating the boat is installed. The rotation shaft 255 of the rotation mechanism 254 penetrates the seal cap 219 and is connected to a boat 217 described later, and is configured to rotate the substrate 200 by rotating the boat 217. The seal cap 219 is configured to be vertically lifted and lowered by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203, whereby the boat 217 can be carried into and out of the processing chamber 201. The rotation mechanism 254 and the boat elevator 115 are controlled at a predetermined timing so as to perform a predetermined operation.

[0031] The boat 217 as a substrate holder is supported by the rotation shaft 255 via a heat insulating portion 216. The boat 217 includes a plurality of upright support columns 217a, a disc 104 supported by the plurality of support columns 217a at regular intervals, and a substrate support portion 217b supported by the support columns 217a between the discs 104. The boat 217 places the substrate 200 on the substrate support portion 217b attached to the support columns 217a in a space partitioned by a plurality of discs 104, and supports a plurality of substrates 200 in a horizontal posture and aligned with each other in the vertical direction in multiple stages. Therefore, the substrates 200 are arranged at regular intervals. The boat 217 is formed of a heat-resistant material such as quartz or silicon carbide, for example. The heat insulating portion 216 and the boat 217 constitute a substrate holder. During substrate processing, the boat 217 is housed inside the reaction tube 203. The boat 217 is configured to support, for example, about 5 to 50 substrates 200. Note that the disc 104 is also called a separator.

[0032] The heat insulation part 216 has a structure such that the conduction or transmission of heat in the vertical direction is reduced. Also, it may be configured to have a cavity inside the heat insulation part 216. In addition, holes may be formed on the lower surface of the heat insulation part 216. By providing these holes, a pressure difference is prevented from occurring between the inside and the outside of the heat insulation part 216, so that the wall thickness of the heat insulation part 216 does not have to be increased. In addition, a cartridge heater may be provided inside the heat insulation part 216.

[0033] The reaction tube 203 will be described in detail with reference to FIG. 2. The gas introduction pipe 230 and the gas exhaust pipe 231 may have an arbitrary cross-sectional shape of the pipe. For example, they have a flat rectangular parallelepiped shape with a hollow interior. The gas introduction pipe 230 and the gas exhaust pipe 231 are provided symmetrically on the side surface of the vertically standing body 205 with flat surfaces facing horizontally. The side surface positions of the body 205 where the gas introduction pipe 230 and the gas exhaust pipe 231 are provided are, for example, the central position on the side surface of the body 205, the intermediate position in the height direction, and the position facing all or part of one or more substrates 200 processed inside the body 205. The gas introduction pipe 230 and the gas exhaust pipe 231 are horizontally connected to the body 205. The gas introduction pipe 230 and the gas exhaust pipe 231 are welded and connected to the body 205 so that the axes of both pipes are aligned in a straight line.

[0034] An auxiliary heater 271 for the gas introduction pipe is provided in contact with the end of the gas introduction pipe 230 on the side of the body 205 so as to cover the gas introduction pipe 230 (both side surfaces and upper and lower surfaces). An auxiliary heater 272 for the gas exhaust pipe is provided in contact with the end of the gas exhaust pipe 231 on the side of the body 205 so as to cover the gas exhaust pipe 231 (both side surfaces and upper and lower surfaces). Since the upper and lower parts of the gas introduction pipe 230 and the gas exhaust pipe 231 are likely to get cold, heat escape can be suppressed by covering at least the upper and lower surfaces with the auxiliary heaters 271 and 272.

[0035] The gas flow inside the reaction vessel 204 will be described with reference to FIG. 3. The reaction vessel 204 is composed of a reaction tube 203 and a manifold 209. The manifold 209 is formed in a cylindrical shape with openings at the upper and lower ends. The manifold 209 is engaged with the lower end of the reaction tube 203 and is provided to support the reaction tube 203. A processing chamber 201 for processing the substrate 200 is formed inside the reaction vessel 204.

[0036] Inside the processing chamber 201, a boat 217 as a substrate holder for holding the substrate 200 vertically in multiple stages is inserted. The lower end opening of the manifold 209 is airtightly closed by a seal cap 219 that supports the boat 217 inserted into the processing chamber 201.

[0037] By exhausting the processing gas introduced from the gas introduction pipe 230 of the reaction tube 203 through the gas exhaust pipe 231, the gas flow inside the processing chamber 201 is made into a side flow as indicated by the white arrow. As a result, the processing gas can be supplied to the substrate 200 from the horizontal direction and exhausted from the horizontal direction, so that the processing gas can be smoothly supplied between the substrates 200. Therefore, the side position of the body 205 where the gas introduction pipe 230 and the gas exhaust pipe 231 are provided does not necessarily have to be at the intermediate position in the height direction, and it is preferably at a position facing at least all of the substrate processing areas. For example, between the upper end and the lower end of the gas introduction pipe 230, a product substrate is arranged in the height direction. Here, the substrate processing area may be a substrate processing area where both a side dummy substrate and a product substrate placed on the upper and lower ends of the boat 217 are processed, or a product substrate processing area where only the product substrate is processed.

[0038] The configuration of the heater will be described in detail with reference to FIG. 4. The heater 206 includes a cylindrical heat insulator 260 with a closed upper part and an open lower part, an inlet 261 formed so as to avoid interference or contact with the gas introduction pipe 230 in the heat insulator 260, and an outlet 262 formed in the heat insulator 260 on the side opposite to the inlet 261 so as to avoid the gas exhaust pipe 231.

[0039] Specifically, the inlet 261 formed in the heat insulator 260 so as to avoid the gas introduction pipe 230 is formed, for example, as a groove-shaped notch 261a that linearly extends from the lower end of the heat insulator 260 of the gas introduction pipe 230 to above the center and has a width wider than the total thickness of the flat rectangular parallelepiped thickness of the gas introduction pipe 230 and the thickness of the auxiliary heater 271. Further, the outlet 262 formed in the heat insulator 260 so as to avoid the gas exhaust pipe 231 is formed, for example, as a groove-shaped notch 262a that linearly extends from the lower end of the heat insulator 260 to above the center, similarly to the inlet 261, and has a width wider than the total thickness of the flat rectangular parallelepiped thickness of the gas exhaust pipe 231 and the thickness of the auxiliary heater 271. Thereby, when covering the reaction tube 203 with the heater 206 from above the reaction tube 203, it becomes possible to cover the outer periphery of the reaction tube 203 while avoiding interference with, for example, the flat rectangular parallelepiped-shaped gas introduction pipe 230 and gas exhaust pipe 231.

[0040] After covering the reaction tube 203 with the heater 206, a heat insulator 267 that closes the inlet 261 below the gas introduction pipe 230 is attached. Further, a heat insulator 268 that closes the outlet 262 below the gas exhaust pipe 231 is attached. Note that an auxiliary heater may be attached instead of the heat insulators 267 and 268.

[0041] Still, the widths of the notches 261a and 262a are preferably smaller than the diameter of the reaction tube 203, and more preferably smaller than the diameter of the substrate 200 processed in the reaction tube 203.

[0042] In addition, the widths of the gas introduction pipe 230 and the gas exhaust pipe 231 are preferably such that the horizontal width with respect to the substrate processing surface is 1 / 2 or less of the diameter of the substrate 200. In this case, the gas flowing out from the gas introduction pipe 230 can pass through the center of the substrate 200 without reducing its flow velocity and reach the gas exhaust pipe 231. More preferably, when the horizontal width with respect to the substrate processing surface is 1 / 3 or less of the diameter of the substrate 200, the gas flowing out from the gas introduction pipe 230 can more surely pass through the center of the substrate 200 without reducing its flow velocity and reach the gas exhaust pipe 231. Even more preferably, when the horizontal width with respect to the substrate processing surface is 1 / 15 or less of the diameter of the substrate 200 within the reaction tube 203, the gas flowing out from the gas introduction pipe 230 can even more surely pass through the center of the substrate 200 without reducing its flow velocity and reach the gas exhaust pipe 231. It is advisable to determine the widths of the notches 261a and 262a in accordance with the widths of these gas introduction pipe 230 and gas exhaust pipe 231. Preferably, the width should be such that even if heat is radiated from between the notch 261a and the gas introduction pipe 230 or between the notch 262a and the gas exhaust pipe 231, it will not have an adverse thermal effect on the outside.

[0043] The internal structure of the heater will be described with reference to FIGS. 5 and 6. The heat insulator 260 of the heater 206 is composed of a cylindrical side wall heat insulating material 264 and a circular ceiling heat insulating material 265 that closes the upper part of the side wall heat insulating material 264. A heater element wire 266 is provided inside this heat insulator 260 (on the side of the reaction tube 203). The heater element wire 266 is formed in a zigzag shape in the vertical direction and is provided annularly along the inner wall of the side wall heat insulating material 264 of each zone that is divided into zones (4 divisions in the illustrated example) in the vertical direction, as in the prior art.

[0044] Note that the auxiliary heater 271 for the gas introduction pipe is provided so as to be wound around the gas introduction pipe 230 between the notch 261a and the gas introduction pipe 230. The auxiliary heater 271 for the gas introduction pipe is provided along the inner wall of the notch 261a. The auxiliary heater 272 for the gas exhaust pipe is provided so as to be wound around the gas exhaust pipe 231 between the notch 262a and the gas exhaust pipe 231. The auxiliary heater 272 for the gas exhaust pipe is provided along the inner wall of the notch 262a. The auxiliary heaters 271 and 272 are composed of heat insulating cloths. The auxiliary heaters 271 and 272 are provided with, for example, a heater element wire and a temperature sensor housed in an insulating pipe disposed in the vicinity of the heater element wire. This temperature sensor is attached at at least one location, preferably at three locations, namely, the upper, middle, and lower positions. When a plurality of temperature sensors are provided, by switching and measuring the temperature, it becomes possible to measure the temperature of the gas introduction pipe 230 more accurately, and temperature control becomes possible more accurately.

[0045] By providing in this way, the auxiliary heaters 271 and 272 are provided so as to span each zone where the heater element wire 266 is zone-divided. The power supply 253 that supplies power to the auxiliary heaters 271 and 272 via the power control circuit 239a is a power supply different from the power supply 252 that supplies power to the heater element wire 266.

[0046] The heat insulating members 273 and 274 will be described with reference to FIG. 1. After attaching the auxiliary heaters 271 and 272 to the gas introduction pipe 230 and the gas exhaust pipe 231, covering the heat insulator 260 on the reaction tube 203, and further attaching the heat insulators 267 and 268, the heat insulating member 273 is wound around the gas introduction pipe 230 and the heat insulating member 274 is wound around the gas exhaust pipe 231. Thereby, heat radiation from the gas introduction pipe 230, the gas exhaust pipe 231, and the heater 206 can be suppressed.

[0047] The temperature sensor will be described with reference to FIG. 7. Between the heater 206 and the reaction tube 203, a temperature sensor 207 as a temperature detector is installed vertically with respect to the heater base 251. Based on the temperature information detected by the temperature sensor 207, the energization of the heater element 266 is adjusted, and thus the temperature in the processing chamber 201 is controlled at a predetermined timing so as to have a predetermined temperature distribution.

[0048] Also, inside the reaction tube 203, along the flow of the gas ejected from the gas introduction pipe 230 to the gas exhaust pipe 231, a temperature sensor 208 for measuring the temperature between the ejection port of the gas introduction pipe 230 and the substrate 200 is installed. For example, when the heater 206 is divided into N parts, it is preferable to arrange N temperature sensors 208 vertically at positions corresponding to the divided heaters.

[0049] Based on the temperature information detected by the temperature sensor in the auxiliary heater 271 for the gas introduction pipe and the temperature sensor 208, the energization of the auxiliary heater 271 for the gas introduction pipe is adjusted, and thus the temperature in the gas introduction pipe 230 is controlled at a predetermined timing so as to reach a predetermined temperature.

[0050] Based on the temperature information detected by the temperature sensor in the auxiliary heater 272 for the gas exhaust pipe, the energization of the auxiliary heater 272 for the gas exhaust pipe is adjusted, and thus the temperature in the gas exhaust pipe 231 is controlled at a predetermined timing so as to reach a predetermined temperature.

[0051] The above-described heater element 266, the auxiliary heater 271 for the gas introduction pipe, and the auxiliary heater 272 for the gas exhaust pipe are each controlled by a separate system.

[0052] With the above-described configuration, it is possible to eliminate the cold spot by controlling the temperature at a position that is separated from the heater element wire 266 and the auxiliary heaters 271 and 272, is likely to become a cold spot, is on the extension line of the center line of the gas introduction pipe 230, and is on the substrate 200 side of the jet outlet of the gas introduction pipe 230. On the gas introduction pipe 230 side, it is possible to reduce the in-plane deviation amount due to sufficient preheating. On the gas exhaust pipe 231 side, the temperature of the inner wall of the exhaust pipe can be increased, and the adhesion of by-products can be prevented.

[0053] Another embodiment of the heat insulating member will be described with reference to FIG. 7. Covers 275 and 276 may be provided to block and seal the gaps between the outer wall of the heater 206, the gas introduction pipe 230, and the gas exhaust pipe 231 from the outside air. Further, heat insulating members 273 and 274 are filled in the space formed by the covers 275 and 276, the heater 206, the gas introduction pipe 230, and the gas exhaust pipe 231. The cover 275 is connected to the flange 232 provided on the gas introduction pipe 230 and the outer wall of the heater 206. The cover 276 is connected to the flange 233 provided on the gas exhaust pipe 231 and the outer wall of the heater 206.

[0054] By the covers 275 and 276, it is possible to suppress the convection with the outside air by blocking and sealing the gaps between the outer wall of the heater 206, the gas introduction pipe 230, and the gas exhaust pipe 231 from the outside air, and thus it is possible to eliminate the distorted temperature distribution generated by this convection. Further, even if the gap condition fluctuates due to repeated attachment and removal of the reaction tube 203, since the convection is suppressed, it is not affected by the convection.

[0055] By filling the space formed by the covers 275 and 276, the heater 206, the gas introduction pipe 230, and the gas exhaust pipe 231 with the heat insulating members 273 and 274, it is possible to suppress the convection of the gas in the space and the heat radiation from the gas introduction pipe 230, the gas exhaust pipe 231, and the auxiliary heaters 271 and 272. Thereby, the temperature rise of the covers 275 and 276 can be suppressed, the airtightness can be maintained, and it is possible to improve the temperature control performance of the reaction tube 203 by the auxiliary heaters 271 and 272 from the adverse effects of thermal disturbances.

[0056] Even in an environment where the control variation of the heater 206 affects the temperature of the reaction tube 203 which is the object to be heated, since the auxiliary heaters 271 and 272 are in close contact with the reaction tube 203 together with the temperature sensors used for its temperature control, they can follow the temperature change of the reaction tube 203 with little delay, and thus it is possible to perform temperature control with good responsiveness.

[0057]

[0056] The configuration of the controller 240 will be described with reference to FIG. 8. The controller 240 which is a control unit (control means) is configured as a computer including a CPU (Central Processing Unit) 240a, a RAM (Random Access Memory) 240b, a storage device 240c, and an I / O port 240d. The RAM 240b, the storage device 240c, and the I / O port 240d are configured to be able to exchange data with the CPU 240a via an internal bus 240e. An input / output device 281 configured as, for example, a touch panel or the like and an external storage device 282 can be connected to the controller 240.

[0058] The storage device 240c is configured of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 240c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures and conditions of substrate processing described later are described, and the like are stored in a readable manner. The process recipe is a combination that causes the controller 240 to execute each procedure in the substrate processing step described later so as to obtain a predetermined result, and functions as a program. Hereinafter, this program recipe, control program, etc. are collectively referred to simply as a program. Note that when the term "program" is used in this specification, it may include only the process recipe alone, only the control program alone, or both of them. The RAM 240b is configured as a memory area (work area) that temporarily holds programs, data, etc. read by the CPU 240a.

[0059] The I / O port 240d is connected to the aforementioned MFC 241, pressure regulator 242, pressure sensor 245, vacuum exhaust device 246, heater 206, auxiliary heaters 271 and 272, temperature sensors 207 and 208, rotation mechanism 254, boat elevator 115, etc. Note that the "connection" in the present disclosure includes not only the meaning that each part is connected by a physical cable, but also the meaning that the signals (electronic data) of each part can be directly or indirectly transmitted / received. For example, between each part, there may be provided equipment for relaying signals, or equipment for converting or calculating signals.

[0060] The CPU 240a is configured to read and execute a control program from the storage device 240c, and to read a process recipe from the storage device 240c in response to the input of an operation command from the input / output device 281, etc. Then, the CPU 240a controls the rotation mechanism 254, the flow rate adjustment operation of various gases by the MFC 241, the opening / closing operation of the pressure regulator 242 and the pressure adjustment operation by the pressure regulator 242 based on the pressure sensor 245, the start and stop of the vacuum exhaust device 246, the temperature adjustment operation of the heater 206 based on the temperature sensor 207, the temperature adjustment operation of the auxiliary heater 271 based on the temperature sensor 208, etc., the forward and reverse rotation, rotation angle and rotation speed adjustment operation of the boat 217 by the 254, the lifting operation of the boat 217 by the boat elevator 115, etc. so as to conform to the content of the read process recipe.

[0061] Note that the controller 240 may be configured not only as a dedicated computer but also as a general-purpose computer. For example, an external storage device (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory or a memory card) 282 storing the above-described program is prepared, and the controller 240 according to this aspect can be configured by installing the program in a general-purpose computer using such an external storage device 282. Note that the means for supplying a program to the computer is not limited to the case of supplying via the external storage device 282. For example, a communication means such as a network 283 (the Internet or a dedicated line) may be used to supply the program without going through the external storage device 282. Note that the storage device 240c and the external storage device 282 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. Note that in this specification, when the term "recording medium" is used, it may include only the storage device 240c alone, only the external storage device 282 alone, or both of them.

[0062] (2) Substrate Processing Step Next, as one step of the manufacturing process of a semiconductor device (semiconductor device), an example of forming an insulating film, for example, a silicon nitride (Si3N4) film as a silicon-containing film, on a substrate using the above-described substrate processing apparatus will be described with reference to FIG. 9. In the following description, the operations of each part constituting the substrate processing apparatus are controlled by the controller 240.

[0063] [Substrate Loading Step: S201] The substrate loading step S201 will be described. When a plurality of substrates 200 are loaded (substrate charge) into the boat 217, as shown in FIG. 1, the boat 217 holding the plurality of substrates 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0064] [Pressure adjustment step: S202] The pressure adjustment step S202 will be described. The inside of the processing chamber 201 is adjusted by the vacuum exhaust device 246 so as to reach a predetermined pressure (vacuum degree). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and based on this measured pressure, the pressure adjustment device 242 is feedback-controlled. Also, so that the inside of the processing chamber 201 reaches a predetermined temperature, it is heated by the heater element 266 based on the temperature information detected by the temperature sensor 207. Also, so that the inside of the gas introduction pipe 230 reaches a predetermined temperature, it is heated by the auxiliary heater 271 for the gas introduction pipe based on the temperature information detected by the temperature sensor 208. At the same time, so that the gas exhaust pipe 231 reaches a predetermined temperature, it is heated by the auxiliary heater 272 for the gas exhaust pipe based on the temperature information detected by the temperature sensor in the auxiliary heater 272. At this time, based on the temperature information detected by the temperature sensor 207 so that the inside of the processing chamber 201 has a predetermined temperature distribution, the energization condition of the heater 206 is feedback-controlled. Subsequently, the boat 217 is rotated by the rotation mechanism 254, and thus the substrate 200 is rotated.

[0065] [Film formation step: S203] Next, an example of the film formation step, the alternate supply process, will be described. In the alternate supply process, different gases are alternately supplied to form a desired film on the substrate.

[0066] For example, in the first step, a first gas is supplied from the first gas supply unit 310 to the processing chamber 201. In the next second step, a second gas is supplied from the second gas supply unit 320 to the processing chamber 201 to form a desired film. Between the first step and the second step, a purge step for exhausting the atmosphere in the processing chamber 201 is provided. By performing the combination of the first step, the purge step, and the second step at least once, preferably a plurality of times, a Si-containing film, for example, is formed on the substrate 200.

[0067] [Normal pressure recovery step: S204] When a preset processing time elapses, an inert gas is supplied from the inert gas supply source, the inside of the processing chamber 201 is replaced with the inert gas, and the pressure inside the processing chamber 201 is restored to normal pressure.

[0068] [Substrate unloading step: S205] Thereafter, the seal cap 219 is lowered by the boat elevator 115, the lower end of the manifold 209 is opened, and the processed substrate 200 is unloaded (boat unloading) from the lower end of the manifold 209 to the outside of the reaction tube 203 while being held by the boat 217. Thereafter, the processed substrate 200 is taken out from the boat 217 (substrate discharge).

[0069] (An example of processing conditions) Incidentally, as an example, the processing conditions for processing a substrate in the substrate processing apparatus according to this aspect are, for example, in the formation of a silicon nitride (Si3N4) film, the processing pressure is 10 to 100 Pa, the gas species are dichlorosilane gas (DCS (SiH2Cl2)), ammonia gas (NH3), and the gas supply flow rates are 100 to 300 sccm for DCS and 300 to 1000 sccm for NH3. Further, the processing temperature in the reaction tube 203 heated by the heater element 266 is 500°C to 780°C, the temperature in the gas introduction tube 230 heated by the auxiliary heater 271 for the gas introduction tube is from 150°C to the processing temperature of 550 to 780°C, and the temperature of the gas exhaust tube 231 heated by the auxiliary heater 272 for the gas exhaust tube is from the processing temperature of 550 to 780°C to 150°C. By maintaining each processing condition at a certain value within each range, the substrate is processed.

[0070] According to this aspect, it has one or more of the following effects.

[0071] (1) The substrate processing apparatus includes a protruding portion (gas introduction tube), a reaction tube for processing a substrate, a first heating portion (heater) for heating the reaction tube, a second heating portion (auxiliary heater) for heating the protruding portion, and a heat insulating member provided on the protruding portion. Thereby, heat radiation from the protruding portion can be suppressed.

[0072] (2) The protruding portion is provided on the gas supply side for supplying gas. Since the second heating portion heats the protruding portion on the gas supply side for supplying gas, the gas can be sufficiently preheated to a temperature at which it can react, and substrate processing can be performed efficiently. Further, when a liquid raw material or a raw material that is easily liquefied at normal temperature and pressure is used as the gas raw material, liquefaction at the protruding portion can be prevented.

[0073] (3) The reaction tube has a gas exhaust protruding portion (gas exhaust tube) for exhausting gas, and includes a heat insulating member provided on the gas exhaust side protruding portion. Since the second heating portion heats the gas exhaust protruding portion (gas exhaust tube) for exhausting gas, adhesion of by-products at the gas exhaust protruding portion can be prevented.

[0074] (4) The heat insulating member is provided in contact with the gas supply side protrusion. Thereby, heat dissipation from the gas supply side protrusion can be suppressed.

[0075] (5) The heat insulating member is provided in contact with the gas exhaust side protrusion. Thereby, heat dissipation from the gas exhaust protrusion can be suppressed.

[0076] (6) A cover is provided at the position where the heat insulating member is provided. Thereby, heat escape can be suppressed.

[0077] (7) The second heating part is wound around the protrusion. Thereby, heat escape can be suppressed.

[0078] As described above in detail based on the present disclosure, it goes without saying that the present disclosure is not limited to the above aspects, and various modifications can be made without departing from the gist thereof. For example, the above aspects have been described in detail for easy understanding of the present disclosure, and are not necessarily limited to those having all the configurations described. Also, it is possible to add, delete, or replace a part of the configuration of the above aspects with other configurations.

Explanation of Reference Numerals

[0079] 200 Substrate 203 Reaction tube 206 Heater (first heating part) 230 Gas introduction pipe (protrusion) 271 Auxiliary heater (second heating part) 273 Heat insulating member

Claims

1. A reaction tube having a protrusion for processing a substrate, a first heating unit for heating the reaction tube, a second heating unit for heating the protrusion, a heat insulating member provided on the protrusion, a cover provided at a position where the heat insulating member is provided, and a substrate processing apparatus comprising the same.

2. The substrate processing apparatus according to claim 1, wherein the protrusion is a gas supply side protrusion provided on a gas supply side for supplying gas.

3. The substrate processing apparatus according to claim 2, wherein the heat insulating member is provided on the gas supply side protrusion.

4. The substrate processing apparatus according to claim 3, wherein the heat insulating member is provided in contact with the gas supply side protrusion.

5. The substrate processing apparatus according to claim 2, wherein the heat insulating member is provided outside the gas supply side protrusion.

6. The substrate processing apparatus according to claim 2, wherein an inlet is formed in the heat insulating member so as to avoid the gas supply side protrusion.

7. The substrate processing apparatus according to claim 1 or claim 2, wherein the protrusion is a gas exhaust side protrusion provided on a gas exhaust side for exhausting gas.

8. The substrate processing apparatus according to claim 7, wherein the heat insulating member is provided on the gas exhaust side protrusion.

9. The substrate processing apparatus according to claim 7, wherein the heat insulating member is provided in contact with the gas exhaust side protrusion.

10. The substrate processing apparatus according to claim 8, wherein the heat insulating member is provided outside the gas exhaust side protrusion.

11. The substrate processing apparatus according to claim 7, wherein an outlet is formed in the heat insulating member so as to avoid the gas exhaust side protrusion.

12. The substrate processing apparatus according to claim 1, wherein the heat insulating member is provided between the protrusion and the cover.

13. The substrate processing apparatus according to claim 1, wherein the second heating unit is wound around the protrusion.

14. The substrate processing apparatus according to claim 1, further comprising a substrate holder for holding a plurality of the substrates in multiple stages in a vertical direction.

15. The substrate processing apparatus according to claim 14, wherein the plurality of substrates are arranged in a height direction between an upper end and a lower end of the protrusion.

16. The substrate processing apparatus according to claim 1, wherein the first heating unit is provided outside the reaction tube.

17. A step of loading the substrate into the reaction tube of a substrate processing apparatus, the reaction tube having a protrusion and processing the substrate, a first heating unit for heating the reaction tube, a second heating unit for heating the protrusion, a heat insulating member provided on the protrusion, and a cover provided at a position where the heat insulating member is provided. A step of supplying gas to the substrate. A step of processing the substrate. A method for manufacturing a semiconductor device having the above steps.

18. A step of loading the substrate into the reaction tube of a substrate processing apparatus, the reaction tube having a protrusion and processing the substrate, a first heating unit for heating the reaction tube, a second heating unit for heating the protrusion, a heat insulating member provided on the protrusion, and a cover provided at a position where the heat insulating member is provided. A step of supplying gas to the substrate. A step of processing the substrate. A substrate processing method having the above steps.

19. A procedure of loading the substrate into the reaction tube of a substrate processing apparatus, the reaction tube having a protrusion and processing the substrate, a first heating unit for heating the reaction tube, a second heating unit for heating the protrusion, a heat insulating member provided on the protrusion, and a cover provided at a position where the heat insulating member is provided. A procedure of supplying gas to the substrate. A procedure of processing the substrate. A program for causing a computer to execute the above procedures on the substrate processing apparatus.

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