Substrate processing apparatus, method for manufacturing a semiconductor device, program, and substrate processing method

Abstract

To provide a technique that can improve throughput by inhibiting oxidation and particle adhesion on a substrate surface.SOLUTION: A substrate processing apparatus has: a plurality of processing chambers, each of which performs predetermined processing on a substrate carried in; a transfer chamber which is adjacent to the plurality of processing chambers and is kept in a reduced pressure state; and a standby chamber which can be connected to the transfer chamber in a reduced pressure state, has a plurality of support sections that can support a plurality of substrates after completion of the processing in a first processing chamber of the plurality of processing chambers, and is configured to supply inert gas to each of a predetermined number of substrates of the plurality of substrates supported respectively by the plurality of support sections.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a method for manufacturing a semiconductor device 、 program and substrate processing method and a program

Background Art

[0002] As one step of the manufacturing process of a semiconductor device (device), a plurality of processes may be performed on a substrate in a plurality of processing furnaces (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] As described above, when a plurality of processes are performed on a substrate in a plurality of processing furnaces, there may be a waiting time until the next process for the substrate that has completed the process. Also, during this waiting time, the surface of the substrate may be exposed to the atmosphere or particles may adhere to the surface of the substrate

[0005] The present disclosure provides a technology capable of suppressing oxidation of the substrate surface and adhesion of particles and improving throughput

Means for Solving the Problems

[0006] According to one aspect of the present disclosure a plurality of processing chambers that respectively perform preset processes on the loaded substrate a transfer chamber maintained in a reduced pressure state adjacent to the plurality of processing chambers It is communicable with the transfer chamber in a reduced-pressure state, includes a plurality of support parts capable of supporting a plurality of substrates after the processing in the first processing chamber among the plurality of processing chambers is completed, and is configured to supply an inert gas to the substrates every predetermined number among the plurality of substrates respectively supported by the plurality of support parts, a standby chamber, A technique having the same is provided.

Effect of the Invention

[0007] According to the present disclosure, it is possible to suppress oxidation on the substrate surface and adhesion of particles, and improve throughput.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Mode for Carrying Out the Invention

[0009] (1) Configuration of Substrate Processing Apparatus Hereinafter, an aspect of the present disclosure will be mainly described with reference to FIGS. 1 to 5. Note that the drawings used in the following description are all schematic, and the dimensional relationships of each element shown in the drawings, the ratios of each element, etc. do not necessarily match the actual ones. Also, the dimensional relationships of each element and the ratios of each element do not necessarily match among a plurality of drawings.

[0010] FIG. 1 is a top cross-sectional view of a substrate processing apparatus 10 for implementing a method of manufacturing a semiconductor device (device). The substrate processing apparatus 10 is a cluster-type apparatus, and the transfer apparatus is divided into a vacuum side and an atmospheric side. Further, in the substrate processing apparatus 10, a FOUP (Front Opening Unified Pod; hereinafter referred to as a pod) 100 is used as a carrier for transferring a wafer 200 as a substrate.

[0011] (Configuration on the vacuum side) As shown in FIG. 1, the substrate processing apparatus 10 includes a first transfer chamber 103 that can withstand a pressure (negative pressure) less than atmospheric pressure, such as a vacuum state. The housing 101 of the first transfer chamber 103 has, for example, a pentagonal shape in plan view and is formed in a box shape with both upper and lower ends closed.

[0012] A first substrate transfer machine 112 for transferring the wafer 200 is provided in the first transfer chamber 103.

[0013] Of the five side walls of the housing 101, the side wall located on the front side (the lower side in FIG. 1) is connected to a load lock chamber 122 and a load lock chamber 123 as a standby chamber via gate valves 126 and 127, respectively. The load lock chambers 122 and 123 are configured to be able to use a function of loading the wafer 200, a function of waiting for the wafer 200, and a function of unloading the wafer 200, and are each configured with a structure that can withstand negative pressure, although details will be described later.

[0014] Of the five side walls of the housing 101 of the first transfer chamber 103, the four side walls located on the rear side (the back side, the upper side in FIG. 1) are each connected adjacent to a processing container 202a to 202d for performing a desired process on the wafer 200 via gate valves 70a to 70d.

[0015] (Configuration on the atmospheric side) In front of the load lock chambers 122 and 123, a second transfer chamber 121 capable of transferring the wafer 200 under atmospheric pressure is connected via gate valves 128 and 129. A second substrate transfer machine 124 for transferring the wafer 200 is provided in the second transfer chamber 121.

[0016] A notch alignment device 106 is provided on the left side of the second transfer chamber 121. Note that the notch alignment device 106 may be an orientation flat alignment device.

[0017] In front of the housing 125 of the second transfer chamber 121, a substrate loading / unloading port 134 for loading and unloading the wafer 200 into and out of the second transfer chamber 121 and a pod opener 108 are provided. On the side opposite to the pod opener 108 with the substrate loading / unloading port 134 in between, that is, outside the housing 125, a load port (IO stage) 105 is provided. The pod opener 108 includes a closure that can open and close the cap 100a of the pod 100 and block the substrate loading / unloading port 134. By opening and closing the cap 100a of the pod 100 placed on the load port 105, the wafer 200 can be taken in and out of the pod 100. Also, the pod 100 is configured to be supplied to and discharged from the load port 105 by an in-process transfer device (such as an OHT) not shown in the figure.

[0018] (Configuration of the processing container) The processing containers 202a to 202d each have a processing chamber 201a to 201d. The processing chambers 201a to 201d are configured to communicate with each other in a reduced-pressure state via gate valves 70a to 70d and the first transfer chamber 103. In the processing chambers 201a to 201d, preset processes are respectively executed on the loaded wafers 200. That is, in the processing containers 202a to 202d, different processes are respectively executed on the wafer 200.

[0019] As the processing containers 202a to 202d, a single-wafer substrate processing apparatus and a batch-type substrate processing apparatus are mixedly loaded. The single-wafer substrate processing apparatus includes a single-wafer processing chamber that performs single-wafer processing on one or several wafers 200 at a time. The batch-type substrate processing apparatus includes a batch processing chamber that performs batch processing on a plurality of wafers 200 at a time. That is, as the processing chambers 201a to 201d, a single-wafer processing chamber and a batch processing chamber are mixedly loaded.

[0020] (Configuration of load lock chamber) Next, the load lock chambers 122 and 123 will be described. The load lock chambers 122 and 123 are provided adjacent to one surface of the first transfer chamber 103 on the vacuum side via gate valves 126 and 127, respectively. Also, the load lock chambers 122 and 123 are provided adjacent to one surface of the second transfer chamber 121 on the atmospheric side via gate valves 128 and 129, respectively. The load lock chambers 122 and 123 are configured to communicate with the processing chambers 201a to 201d in a depressurized state via the gate valves 126 and 127 and the first transfer chamber 103. That is, the load lock chambers 122 and 123 can communicate with the first transfer chamber 103 in a depressurized state via the gate valves 126 and 127. Also, the load lock chambers 122 and 123 are configured to communicate with the second transfer chamber 121 in an atmospheric pressure state via the gate valves 128 and 129.

[0021] The load lock chamber 122 stores the unprocessed wafers 200 before being transferred to any of the processing chambers 201a to 201d. Also, the load lock chamber 123 stores the processed wafers 200 processed in at least any of the processing chambers 201a to 201d. That is, the load lock chambers 122 and 123 are storage chambers that temporarily store unprocessed or processed wafers 200, respectively.

[0022] FIGS. 2(A) and 2(B) are explanatory diagrams schematically showing an example of the schematic configuration of the load lock chamber 123.

[0023] The load lock chamber 123 is used as a waiting chamber for waiting for the wafer 200 after being processed in at least any one of the processing containers 202a to 202d before executing the next process. The load lock chamber 123 includes a housing 301, a plurality of support portions 302 capable of supporting a plurality of wafers 200 substantially horizontally in the vertical direction within the housing 301, an inert gas flow path 303 for supplying an inert gas into the housing 301, and an inert gas supply port 304.

[0024] As shown in FIG. 2(A), the inert gas flow path 303 is formed vertically on both side walls of the housing 301. A plurality of inert gas supply ports 304 are formed substantially horizontally in the vertical direction at corresponding height positions of the plurality of wafers 200 in the load lock chamber 123. The inert gas supply port 304 is formed so as to communicate the inert gas flow path 303 with the inside of the load lock chamber 123.

[0025] Further, as shown in FIG. 2(B), a plurality of inert gas supply ports 304 are formed in the width direction of the load lock chamber 123. Also, the inert gas supply port 304 is formed obliquely toward the exhaust port 305 from the center of the wafer 200. That is, the inert gas flowing through the inert gas flow path 303 is supplied substantially horizontally to the surfaces of the respective wafers 200 from both sides of the respective wafers 200.

[0026] An inert gas supply pipe 306 is connected to the inert gas flow path 303. The inert gas supply pipe 306 is provided with an inert gas supply source 307, a mass flow controller (flow rate control unit) MFC 308 which is a flow rate controller, and a valve 309 which is an on-off valve in order from the upstream side of the gas flow. Mainly, the inert gas supply pipe 306, the MFC 308, and the valve 309 constitute an inert gas supply system 314. The inert gas supply source 307 may be included in the inert gas supply system 314.

[0027] From the inert gas supply pipe 306, the inert gas is supplied into the load lock chamber 123 through the inert gas flow path 303 and the inert gas supply port 304. The inert gas acts as a purge gas.

[0028] On the side of the bottom surface of the housing 301 facing the first transfer chamber 103, an exhaust port 305 for exhausting the atmosphere in the load lock chamber 123 is provided. That is, the exhaust port 305 is configured to exhaust the inert gas supplied into the load lock chamber 123. Thereby, it becomes possible to flow the inert gas supplied to the surface of the wafer 200 without allowing it to stay, and it is possible to suppress the reattachment of particles onto the wafer 200 waiting in the load lock chamber 123. The exhaust port 305 may be provided, for example, below the side surface or at the center of the bottom surface of the housing 301.

[0029] An exhaust pipe 310 is connected to the exhaust port 305. A vacuum pump 313 as a vacuum exhaust device is connected to the exhaust pipe 310 via a pressure sensor 311 as a pressure detector (pressure detection unit) for detecting the pressure inside the housing 301 and an APC (Auto Pressure Controller) valve 312 as a pressure regulator (pressure regulation unit). The APC valve 312 can perform vacuum exhaust and stop of vacuum exhaust inside the housing 301 by opening and closing the valve in a state where the vacuum pump 313 is operated. Further, in a state where the vacuum pump 313 is operated, the valve opening degree is adjusted based on the pressure information detected by the pressure sensor 311, so that the pressure inside the housing 301 can be adjusted. Mainly, the exhaust system 315 is constituted by the exhaust pipe 310, the APC valve 312, and the pressure sensor 311. The vacuum pump 313 may be included in the exhaust system 315.

[0030] In the load lock chamber 123, a plurality of wafers 200 are configured to be supported in multiple stages by a plurality of support portions 302 in a horizontal posture and aligned vertically with their centers aligned with each other, that is, arranged at intervals. The housing 301 and the support portion 302 are integrally formed, for example, and are made of a heat-resistant material such as quartz or SiC.

[0031] The load lock chamber 123 is used as a waiting chamber for waiting for the wafer 200 being processed. Also, in the load lock chamber 123, the wafer 200 after the processing in any one of the processing chambers 201a to 201d is placed on the support part 302 and waits. In the present disclosure, an inert gas supply port 304 is provided for each slot (that is, for each sheet), and the case of supplying inert gas to the wafer 200 of each support part 302 has been described as an example. However, among the plurality of wafers 200 waiting, it may be configured to supply inert gas to the wafers 200 for each predetermined number of slots (that is, for each predetermined number of sheets). For example, the inert gas may be supplied for every 2 slots or every 3 slots.

[0032] (2) Configuration of the controller Next, the configuration of the controller 500 as the control unit (control means) will be described.

[0033] The controller 500 as the control unit (control means) controls each of the above-described units so as to perform the substrate processing steps described later.

[0034] As shown in FIG. 3, the controller 500 is configured as a computer including a CPU (Central Processing Unit) 500a, a RAM (Random Access Memory) 500b, a storage device 500c, and an I / O port 500d. The RAM 500b, the storage device 500c, and the I / O port 500d are configured to be able to exchange data with the CPU 500a via an internal bus 500e. An input / output device 501 configured as, for example, a touch panel or the like and a display device 472 such as a display are connected to the controller 500.

[0035] The memory device 500c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. In the memory device 500c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures and conditions for substrate processing described later, etc. are stored in a readable manner. The process recipe is a combination that enables the controller 500 to execute each procedure in the substrate processing step described later and obtain a predetermined result, and functions as a program. Hereinafter, this process recipe, control program, etc. are collectively referred to simply as a program. Note that when the term "program" is used in this specification, it may include only the process recipe alone, only the control program alone, or both of them. Also, the RAM 500b is configured as a memory area (work area) that temporarily holds programs, data, etc. read by the CPU 500a.

[0036] The I / O port 500d is connected to the MFC 308, the valve 309, the pressure sensor 311, the APC valve 312, the vacuum pump 313, the gate valves 70a to 70d, 126 to 129, the first substrate transfer machine 103, the second substrate transfer machine 124, etc.

[0037] The CPU 500a is configured to read and execute the control program from the memory device 500c, and to read the process recipe from the memory device 500c in response to the input of an operation command from the input / output device 501, etc. Then, the CPU 500a controls the transfer and substrate transfer operations of the wafer 200 by the first substrate transfer machine 103 and the second substrate transfer machine 124, the supply and discharge operations of the inert gas by the MFC 308, the valve 309, the pressure sensor 311, the APC valve 312, and the vacuum pump 313 in the load lock chamber 123, the vacuum exhaust operation, the temperature increase and decrease operations by the heaters in the processing containers 202a to 202d, the pressure adjustment operation by the APC valve, the gas flow rate adjustment operation by the MFC and the valve, etc. so as to conform to the content of the read process recipe.

[0038] Note that the controller 500 may be configured not only as a dedicated computer but also as a general-purpose computer. For example, an external storage device (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card) 502 storing the above-described program is prepared, and the controller 500 according to this embodiment can be configured by installing the program in a general-purpose computer using such an external storage device 502. Note that the means for supplying a program to a computer is not limited to the case of supplying via the external storage device 502. For example, a communication means such as the Internet or a dedicated line may be used to supply the program without passing through the external storage device 502. Note that the storage device 500c and the external storage device 502 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. Note that when the term "recording medium" is used in this specification, it may include only the storage device 500c alone, only the external storage device 502 alone, or both of them.

[0039] (3) Substrate Processing Step Next, as one step of the semiconductor manufacturing process, with reference to FIGS. 4 and 5, a step from the start of the process in the processing container 202a to the end of the process in the processing container 202d on the wafer 200 using the substrate processing apparatus 10 having the above-described configuration will be described. In the following description, the operations of each part constituting the substrate processing apparatus 10 are controlled by the controller 500. Also, different processes are executed in the processing containers 202a to 202d, respectively.

[0040] (First Process: S11) First, the unprocessed wafer 200 stored in the load lock chamber 122 is carried into the processing chamber 201a of the processing vessel 202a by the first substrate transfer machine 112. After the wafer 200 is carried into the processing chamber 201a, the first substrate transfer machine 112 is retracted outside the processing vessel 202a, and the gate valve 70a is closed to seal the inside of the processing vessel 202a. Then, the first process is executed on the wafer 200 in the processing chamber 201a.

[0041] (Standby: S12) Subsequently, the gate valve 70a is opened to communicate the processing chamber 201a with the first transfer chamber 103. When the processing vessel 202b for performing the next second process is in use, after the first process is completed, the wafer 200 is transferred from the processing chamber 201a to the load lock chamber 123 by the first substrate transfer machine 112 and placed on each support portion 302. Then, the wafer 200 after the first process is made to wait until the processing in the processing vessel 202b is completed. Here, when the processing vessel 202a is a single-wafer substrate processing apparatus, each time single-wafer processing is performed on one or several wafers 200, they are placed on each support portion 302 in the load lock chamber 123 and made to wait. That is, it becomes possible to execute the processing on the next wafer 200 in the empty processing vessel 202a. When the processing vessel 202a is a batch-type substrate processing apparatus, after batch processing is performed on a plurality of wafers 200, they are placed on each support portion 302 and made to wait.

[0042] At this time, an inert gas is supplied into the load lock chamber 123. Specifically, the valve 309 and the APC valve 312 are opened, the MFC 308 is controlled, and an inert gas is supplied from the inert gas supply pipe 306 to the wafers 200 on each support portion 302 in the load lock chamber 123 through the inert gas flow path 303 and the inert gas supply port 304. At this time, the APC 312 controls the pressure in the housing 301 to be a predetermined pressure in a reduced-pressure state.

[0043] Then, the APC valve 312 controls the exhaust flow rate of the inert gas in the load lock chamber 123 by the vacuum pump 313 by adjusting the conductance of the exhaust pipe 310, and maintains the inside of the load lock chamber 123 at a predetermined pressure. Thereby, the inert gas in the load lock chamber 123 is removed from the load lock chamber 123 by the vacuum pump 313 through the exhaust port 305 and the exhaust pipe 310.

[0044] In this way, in the load lock chamber 123, an inert gas is supplied to the wafers 200 waiting on each support portion 302 in a reduced pressure state. Note that the operations of each part in the standby steps (S14, S16) described later are the same as those in this step (S12), and thus detailed descriptions thereof are omitted below.

[0045] (Second process: S13) Subsequently, when the previous process in the processing container 202b is completed and the processing container 202b becomes available, the wafer 200 after the first process waiting in the load lock chamber 123 is carried into the processing chamber 201b by the first substrate transfer machine 112. After the wafer 200 is carried into the processing chamber 201b, the first substrate transfer machine 112 is retracted outside the processing container 202b, and the gate valve 70b is closed to seal the inside of the processing container 202b. Then, a second process is executed on the wafer 200 in the processing chamber 201b.

[0046] (Standby: S14) Subsequently, the gate valve 70b is opened to communicate the processing chamber 201b and the first transfer chamber 103. When the processing container 202c for performing the next third process is in use, the wafer 200 after the second process is transferred from the processing chamber 201b to the load lock chamber 123 by the first substrate transfer machine 112 and placed on each support portion 302. Then, the wafer 200 after the second process is supplied with an inert gas and exhausted while waiting until the process in the processing container 202c is completed.

[0047] (Third process: S15) Subsequently, when the previous process in the processing container 202c is completed and the processing container 202c becomes available, the second processed wafer 200 waiting in the load lock chamber 123 is carried into the processing chamber 201c by the first substrate transfer machine 112. After the wafer 200 is carried into the processing chamber 201c, the first substrate transfer machine 112 is retracted outside the processing container 202c, the gate valve 70c is closed, and the inside of the processing container 202c is sealed. Then, a third process is executed on the wafer 200 in the processing chamber 201c.

[0048] (Standby: S16) Subsequently, the gate valve 70c is opened to communicate the processing chamber 201c with the first transfer chamber 103. When the processing container 202d for performing the next fourth process is in use, the wafer 200 after the third process is transferred from the processing chamber 201c to the load lock chamber 123 by the first substrate transfer machine 112 and placed on each support portion 302. Then, an inert gas is supplied to the wafer 200 after the third process and exhausted while waiting until the process in the processing container 202d is completed.

[0049] (Fourth process: S17) Subsequently, when the previous process in the processing container 202d is completed and the processing container 202d becomes available, the wafer 200 after the third process waiting in the load lock chamber 123 is carried into the processing chamber 201d by the first substrate transfer machine 112. After the wafer 200 is carried into the processing chamber 201d, the first substrate transfer machine 112 is retracted outside the processing container 202d, the gate valve 70d is closed, and the inside of the processing container 202d is sealed. Then, a fourth process is executed on the wafer 200 in the processing chamber 201d.

[0050] After the fourth process is executed, the gate valve 70d is opened to communicate the processing chamber 201d with the first transfer chamber 103. Then, the wafer 200 after the fourth process is carried into the load lock chamber 123 from the processing chamber 201d by the first substrate transfer device 112. After closing the gate valve 70d, the gate valve 129 is opened to communicate the load lock chamber 123 with the second transfer chamber 121. Then, the wafer 200 after the first to fourth processes is carried out from the load lock chamber 123 by the second substrate transfer device 124.

[0051] When a plurality of processes are performed on a wafer using a plurality of processing chambers, there may be a waiting time until the next process for the wafer 200 after the process is completed. By temporarily waiting the wafer 200 after the process in the load lock chamber 123 as in the present disclosure, the waiting of the first substrate transfer device 112 is eliminated, and it becomes possible to use the emptied processing container. For this reason, the process becomes smooth and the throughput can be improved. Further, by supplying an inert gas to the surface of the wafer 200 waiting in the load lock chamber 123 in a reduced pressure state, it is possible to prevent the surface of the substrate during waiting from being oxidized and to suppress the adhesion of particles to the surface of the substrate.

[0052] [Other aspects] As described above, one aspect of the present disclosure has been specifically described. However, the present disclosure is not limited to the above-described aspect, and various modifications can be made without departing from the gist thereof.

[0053] For example, in the above-described aspect, the case where each process is performed on the wafer 200 in the order of the processing containers 202a to 202d has been described. However, the present disclosure is not limited thereto. That is, the order and the number are not limited thereto, and the present disclosure can be applied to the case where processing is performed on the wafer 200 using at least two processing containers. Also in this modification, the same effects as those in the above-described aspect can be obtained.

[0054] Also, in the above-described aspect, the case where the load lock chamber 123 is used as a waiting chamber is taken as an example, but the present disclosure is not limited thereto. That is, the load lock chamber 122 may be used as a waiting chamber, or a waiting chamber may be provided separately from the load lock chambers 122 and 123. Also in this modification example, the same effects as those in the above-described aspect can be obtained.

[0055] Also, in the above-described aspect, the case where the exhaust port 305 for exhausting the inert gas is provided on the first transfer chamber 103 side of the bottom surface of the load lock chamber 123 or below the side surface of the load lock chamber 123 has been described, but the present disclosure is not limited thereto. That is, the exhaust port 305 may be provided at the center of the bottom surface of the load lock chamber 123, on the second transfer chamber 121 side of the bottom surface of the load lock chamber 123, on the upper surface of the load lock chamber 123, or the like. Also in this modification example, the same effects as those in the above-described aspect can be obtained.

[0056] Also, the recipes used for each process are preferably prepared individually according to the process content and stored in the storage device 500c via a telecommunication line or an external storage device 502. Then, when starting each process, it is preferable that the CPU 500a appropriately selects an appropriate recipe from among the plurality of recipes stored in the storage device 500c according to the process content. Thereby, it becomes possible to form films with various film types, composition ratios, film qualities, and film thicknesses with good reproducibility using a single substrate processing apparatus. Also, the burden on the operator can be reduced, operation mistakes can be avoided, and each process can be started quickly.

[0057] Also, the above-described recipes are not limited to the case of newly creating them, and for example, they may be prepared by changing existing recipes already installed in the substrate processing apparatus. When changing a recipe, the changed recipe may be installed in the substrate processing apparatus via a telecommunication line or a recording medium on which the recipe is recorded. Also, the input / output device 501 provided in the existing substrate processing apparatus may be operated to directly change the existing recipe already installed in the substrate processing apparatus.

[0058] Also, in the above-described embodiment, it was described that the processing chambers 201a to 201d each contain a single-wafer processing chamber and a batch processing chamber, but the present disclosure is not limited thereto. That is, the single-wafer processing chamber and the batch processing chamber do not have to be mixed, and it may be composed of only the single-wafer processing chamber or only the batch processing chamber. Further, as the processing vessels 202a to 202d, a substrate processing apparatus having a hot-wall type processing furnace, a substrate processing apparatus having a cold-wall type processing furnace, or other substrate processing apparatuses can be used.

[0059] Even when these substrate processing apparatuses are used, each process can be performed under the same processing procedure and processing conditions as in the above-described embodiment, and the same effects as in the above-described embodiment can be obtained.

[0060] Note that the above-described embodiments and modifications can be used in appropriate combinations. At this time, the processing procedure and processing conditions can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications.

Description of Reference Numerals

[0061] 10 Substrate processing apparatus 123 Load lock chamber (waiting chamber) 200 Wafer (substrate) 201a, 201b, 201c, 201d Processing chamber 302 Support part

Claims

1. A plurality of processing chambers that respectively perform preset processes on the loaded substrates, A first transfer chamber maintained in a reduced pressure state adjacent to the plurality of processing chambers, A standby chamber that can communicate with the first transfer chamber in a reduced pressure state and has a plurality of support portions capable of supporting a plurality of substrates after the processing in the first processing chamber among the plurality of processing chambers has ended, A second transfer chamber that communicates on a side different from the first transfer chamber in the standby chamber and is maintained at atmospheric pressure, An exhaust port provided below the bottom surface or side surface of the standby chamber for exhausting an inert gas, A plurality of inert gas supply ports formed in the vertical direction and width direction on both side surfaces of the standby chamber, formed obliquely toward the exhaust port from the center of the substrates supported by the plurality of support portions, and supplying the inert gas to the surface of each substrate supported by the plurality of support portions, A substrate processing apparatus having the above.

2. The substrate processing apparatus according to claim 1, wherein different processes are respectively performed in the plurality of processing chambers.

3. In the second processing chamber among the plurality of processing chambers, the substrates waiting in the standby chamber are loaded, and the process in the second processing chamber is performed on the loaded substrates. The substrate processing apparatus according to claim 1.

4. The substrate processing apparatus according to claim 1, wherein the plurality of processing chambers are mixed with single-wafer processing chambers and batch processing chambers.

5. In a plurality of processing chambers, a step of respectively performing preset processes on the loaded substrates, In a standby chamber that communicates with a first transfer chamber maintained in a reduced pressure state adjacent to the plurality of processing chambers in a reduced pressure state and communicates with a second transfer chamber in an atmospheric pressure state, among the plurality of substrates respectively supported by the plurality of support portions after the processing in the first processing chamber among the plurality of processing chambers has ended, for every predetermined number of substrates, from the inert gas supply ports formed in the vertical direction and width direction on both side surfaces of the standby chamber, formed obliquely toward the exhaust port provided below the bottom surface or side surface of the standby chamber for exhausting the inert gas from the center of the substrates supported by the support portions, a step of supplying the inert gas to the surface of each substrate supported by the plurality of support portions, A method for manufacturing a semiconductor device having the above.

6. In the step of supplying the inert gas, while holding the substrate in the standby chamber, the inert gas is exhausted from the exhaust port provided below the bottom surface or side surface of the standby chamber. The method for manufacturing a semiconductor device according to claim 5.

7. The manufacturing method of the semiconductor device according to claim 5, wherein different processes are executed in each of the plurality of processing chambers.

8. A step of loading the substrate waiting in the waiting chamber into a second processing chamber among the plurality of processing chambers and executing a process in the second processing chamber on the substrate, the manufacturing method of the semiconductor device according to claim 5.

9. The manufacturing method of the semiconductor device according to claim 5, wherein either single-wafer processing or batch processing is carried out in the plurality of processing chambers.

10. In a plurality of processing chambers, a procedure of respectively executing a preset process on the loaded substrate; In a waiting chamber that communicates with a first transfer chamber maintained in a reduced pressure state adjacent to the plurality of processing chambers and communicates with a second transfer chamber in an atmospheric pressure state, among the plurality of substrates respectively supported by a plurality of support parts after the process in the first processing chamber among the plurality of processing chambers is completed, an inert gas is supplied from an inert gas supply port formed in a plurality in the vertical direction and width direction on both side surfaces of the waiting chamber for every predetermined number of substrates, and is formed obliquely toward an exhaust port provided below the bottom surface or side surface of the waiting chamber and exhausting the inert gas, which is provided below the center of the substrate supported by the support part, to the surface of each of the substrates supported by the plurality of support parts; A program for causing a computer to execute on a substrate processing apparatus.

11. In the procedure of supplying the inert gas, while holding the substrate in the waiting chamber, the inert gas is exhausted from an exhaust port provided below the bottom surface or side surface of the waiting chamber, the program according to claim 10.

12. In the plurality of processing chambers, different processes are respectively executed, the program according to claim 10.

13. A step of loading the substrate waiting in the waiting chamber into a second processing chamber among the plurality of processing chambers and executing a process in the second processing chamber on the substrate, the program according to claim 10.

14. In the plurality of processing chambers, either single-wafer processing or batch processing is carried out, the program according to claim 10.

15. In a plurality of processing chambers, a procedure of respectively executing a preset process on the loaded substrate; In a standby chamber that communicates with a first transfer chamber maintained in a reduced pressure state adjacent to the plurality of processing chambers and communicates with a second transfer chamber in an atmospheric pressure state, among the plurality of substrates supported by a plurality of support portions after the processing in the first processing chamber among the plurality of processing chambers is completed, a plurality are formed in the vertical direction and the width direction on both side surfaces of the standby chamber for every predetermined number of substrates, and are formed obliquely from the center of the substrate supported by the support portion toward an exhaust port provided below the bottom surface or side surface of the standby chamber for exhausting an inert gas, a step of supplying the inert gas to the surface of each of the substrates supported by the plurality of support portions from an inert gas supply port; A substrate processing method having the above.

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