Sputtering apparatus

Abstract

To reduce factors for generating particles by suppressing generation of a blurred area around a non-erosion generation area.SOLUTION: In a sputtering device, a cathode unit for emitting sputter particles toward a formation area of a film deposited substrate has: a target on which an erosion area is formed; a magnet unit which is arranged on the target on a side opposite to the film deposited substrate to form the erosion area on the target; and a magnet unit scanning part which can relatively move the magnet unit and the film deposited substrate forward and backward in a swing area defined between one swing end and the other swing end in a swing direction (scanning direction) along a target surface. The magnet unit has a magnet whose longitudinal direction extends in a swing width direction crossing with the swing direction along the target surface, and the magnet has a magnetic flux line inclination mechanism for inclining a magnetic flux line formed at one swing end toward the other swing end.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a sputtering apparatus, and more particularly to a technique suitable for use in film formation having a magnetron cathode.

Background Art

[0002] In a film forming apparatus having a magnetron cathode, a method of moving a magnet with respect to a target is known for the purpose of improving the utilization efficiency of the target. As in the technique disclosed in Patent Document 1, for the purpose of improving the uniformity of film formation, etc., in addition to the movement of the magnet, it is also known to swing the cathode and the target with respect to the substrate to be film-formed.

[0003] Also, as in the technique disclosed in Patent Document 2, for the purpose of preventing the generated particles from having an adverse effect on film formation in the sputtering chamber, etc., it is known to swing the magnet and the cathode. Furthermore, as a technique for swinging the substrate to be film-formed with respect to the magnet and the cathode, the present applicants have disclosed a technique such as Patent Document 3.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, even in the technique of scanning (oscillating) a magnet with respect to a target as described above, due to the occurrence of a non-erosion region, there is a demand to eliminate this because it may cause particle generation in the vicinity of the peripheral edge of the film formation region close to the edge of the oscillation range of the magnet. In particular, it has been found that when the boundary between the non-erosion region and the erosion region is blurred rather than the occurrence of the non-erosion region itself, this causes problems such as the generation of re-sputtering of the re-deposition film (sputtered film deposited on the target), which is the cause of particle generation.

[0006] Also, even in the technique of scanning (oscillating) a magnet with respect to a target as described above, due to the occurrence of a non-erosion region, problems such as a decrease in film thickness, unevenness in film thickness distribution and film quality distribution still remain unresolved in the vicinity of the peripheral edge of the film formation region close to the oscillation range of the magnet. Furthermore, with the increase in the size of the substrate, the demand for improvement in such problems has been increasing.

[0007] The present invention has been made in view of the above circumstances and aims to achieve the following objects. 1. To suppress the occurrence of a blurred region around the non-erosion generation region and reduce the cause of particle generation. 2. To stabilize the formed plasma distribution and improve the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the oscillation position of the magnet.

Means for Solving the Problems

[0008] As a result of intensive research, the inventors of the present application have succeeded in suppressing particle generation due to the non-erosion region and suppressing variations in film thickness distribution and film quality characteristic distribution.

[0009] During sputtering, a magnetic field (magnetic field, magnetic lines of force) is formed from the magnet by the applied power. At this time, the plasma or electrons contributing to sputtering move along the magnetic lines of force formed by the magnet. Among the magnetic lines of force by the magnet, those contributing to plasma generation reach the S pole in an arc shape from the N pole toward the target among the two poles of the magnet arranged flush with the target in parallel. At this time, the magnetic lines of force by the magnet penetrate in the thickness direction from the N pole toward the target from the back side to the front side, are formed in an arc shape in the plasma generation space, and penetrate in the thickness direction from the front side to the back side of the target and return to the S pole.

[0010] A portion at ground potential such as an anode is arranged around the end of the target. In this state, when the magnet is scanned (oscillated) and the magnet is positioned near the oscillation end, the magnet is in a position close to this anode. Then, a phenomenon may occur in which, near the oscillation end of the magnet, the magnetic lines of force from the N pole go toward the anode that is close, and do not return to the S pole. Then, since electrons are tracked (move) along the magnetic lines of force, they do not return to the plasma formation space and flow to the anode without contributing to plasma formation. This is called that the electrons are absorbed.

[0011] When electrons are absorbed by the anode, the electron density on the front surface side of the target, that is, in the plasma generation space, decreases. Then, a phenomenon may occur in which the formed plasma density decreases, or plasma is not generated. This is called that the plasma is absorbed. When such a phenomenon occurs, since the target is not sputtered by the plasma, a non-erosion region is generated, and furthermore, the non-erosion region may become larger.

[0012] Here, when electrons are absorbed by the anode, on-off of the plasma occurs near the anode due to the oscillation of the magnet or the like. As a result, on-off of sputtering by the plasma occurs. Then, the possibility of generating particles due to sputtering of the re-deposition film increases.

[0013] That is, due to the occurrence of the non-erosion region, particle generation may occur near the periphery of the film-forming region close to the swing range of the magnet. At this time, the boundary between the non-erosion region and the erosion region becomes unclear, and an erosion-non-erosion boundary region is formed.

[0014] Thus, it has been found that when the boundary between the non-erosion region and the erosion region is blurred rather than the occurrence of the non-erosion region itself, this causes particle generation problems such as the re-sputtering of the re-deposition film.

[0015] As described above, when electrons are absorbed by the anode, the magnetic field lines from the magnet are in a state of heading towards the anode, that is, in a state inclined outward from the contour of the target rather than in the thickness direction of the target.

[0016] Therefore, in order to solve such problems, the inventors of the present application have found that it is possible to reduce the absorbed electrons by making the magnetic field lines formed from the magnet at the swing end of the magnet not face the anode. That is, it has been found that inclining the magnetic field lines formed from the magnet at one end of the swing end of the magnet towards the other end of the swing end of the magnet rather than in the thickness direction of the target, that is, inclining inward from the contour of the target rather than in the thickness direction of the target, is effective in reducing the non-erosion region.

[0017] In the above description, the magnetic field lines are represented as reaching from the N pole to the S pole according to the normal notation, but there is no problem in understanding the phenomenon even with the reverse polarity.

[0018] Furthermore, when a non - erosion region occurs, plasma generation is suppressed. Therefore, the applied supply power becomes surplus without being consumed for plasma generation. This surplus power is redistributed to a region different from the original non - erosion region or absorbed as the overall voltage (power) fluctuation. Consequently, plasma generation conditions fluctuate like voltage fluctuations, which ultimately causes variations in the film thickness distribution and an expansion of the variations in the film quality characteristics distribution.

[0019] That is, when electrons are absorbed by the anode, due to the occurrence of a non - erosion region, variations in the film thickness distribution and variations in the film quality characteristics distribution will expand.

[0020] Furthermore, when a non - erosion region occurs, partial fluctuations in plasma generation conditions due to voltage fluctuations, etc. may cause a non - erosion region different from the original non - erosion region to occur. In this case, particle generation and variations in the film thickness distribution and film quality characteristics distribution will expand.

[0021] Therefore, in order to solve this problem, the inventors of the present application have found that it is possible to reduce the absorbed electrons by making the magnetic field lines formed from the magnet not face the anode at one end of the oscillating end of the magnet. That is, at one end of the oscillating end of the magnet, the magnetic field lines formed from the magnet are inclined toward the other end of the oscillating end of the magnet rather than in the thickness direction of the target, that is, inclined inward of the target contour rather than in the thickness direction of the target, which has been found to be effective in suppressing the occurrence of variations in the film thickness distribution and film quality characteristics distribution.

[0022] In view of these, the inventors of the present application have completed the present invention as follows.

[0023] (1) The sputtering apparatus according to one aspect of the present invention is A cathode unit that emits sputtering particles toward the formation region of the substrate to be film - formed is A target on which an erosion region is formed, A magnet unit disposed on the opposite side of the target from the film-forming substrate to form the erosion region on the target, A magnet unit scanning unit capable of reciprocating in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the film-forming substrate, having, The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at one swing end toward the other swing end, The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at one swing end toward the other swing end, and the magnet, has a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, and includes, The magnet unit has a plurality of the magnets arranged side by side in the swing direction, The magnetic field line inclination mechanism can have a swing end central magnet portion formed smaller than the central magnet portion of the adjacent magnet in the magnet located at one swing end. (2) The sputtering apparatus according to one aspect of the present invention, A cathode unit that emits sputtered particles toward the formation region of the film-forming substrate, A target on which an erosion region is formed, A magnet unit disposed on the opposite side of the target from the film-forming substrate to form the erosion region on the target, A magnet unit scanning section capable of reciprocating in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be film-formed. having The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism for inclining the magnetic field lines formed by the magnet at one swing end toward the other swing end. The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at one swing end toward the other swing end, The magnet is a central magnet portion which is a linear arrangement of magnetic poles facing the target, has a longitudinal straight portion which is a magnetic pole facing the target and has a polarity different from that of the central magnet portion, extends in parallel at equal intervals on both sides of the central magnet portion, and a bridging portion bridging the ends of both longitudinal straight portions, and a peripheral magnet portion surrounding the periphery of the central magnet portion along the target surface, and is provided with The magnet unit has a plurality of the magnets arranged side by side in the swing direction, and the magnetic field line inclination mechanism can have a swing end longitudinal straight portion formed larger than the longitudinal straight portion of the adjacent magnet in the magnet located at one swing end. (3) The sputtering apparatus according to one aspect of the present invention has a cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed, a target in which an erosion region is formed, and a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target. A magnet unit scanning unit capable of reciprocating in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be film-formed. having The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism for inclining the magnetic field lines formed by the magnet at one swing end toward the other swing end. The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at one swing end toward the other swing end, The magnet has a central magnet portion that is linearly arranged and is a magnetic pole facing the target, and a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface. and includes The magnet unit has a plurality of the magnets arranged side by side in the swing direction, The magnetic field line inclination mechanism has a swing end inclined central magnet portion that is inclined toward the other swing end more than the central magnet portion of the adjacent magnet in the magnet located at one swing end. It can be. (4) The sputtering apparatus according to one aspect of the present invention A cathode unit that emits sputter particles toward the formation region of the substrate to be coated, A target in which a non - erosion region and an erosion region are formed, A magnet unit that is disposed on the side opposite to the substrate to be coated with respect to the target and forms the non - erosion region and the erosion region on the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be coated, having, The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion - non - erosion boundary region where the boundary between the non - erosion region and the erosion region is unclear, The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at one swing end toward the other swing end, The magnet A central magnet part that is linearly arranged and is a magnet pole facing the target, A peripheral magnet part that is a magnet pole facing the target, has a polarity different from that of the central magnet part, and surrounds the periphery of the central magnet part along the target surface, and includes The magnet unit has a plurality of the magnets arranged side by side in the swinging direction, The magnetic field line inclination mechanism has an auxiliary magnet arranged adjacent to the peripheral magnet part at a position outside the swinging region from the one swinging end. It can be like this. (5) The sputtering apparatus according to one aspect of the present invention A cathode unit that emits sputter particles toward the formation region of the substrate to be coated, A target in which a non - erosion region and an erosion region are formed, A magnet unit that is disposed on the side opposite to the substrate to be coated with respect to the target and forms the non - erosion region and the erosion region on the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be coated, having, The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion - non - erosion boundary region where the boundary between the non - erosion region and the erosion region is unclear, The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at the one swing end toward the other swing end, has an anode that is paired with the cathode unit and is located around the target, and the magnetic field line inclination mechanism has an outer magnet part at the swinging end located outside the swinging region from the one swinging end on the back surface of the anode. It can be like this. (6) The sputtering apparatus according to one aspect of the present invention A cathode unit that emits sputter particles toward the formation region of the film-forming substrate is A target in which a non-erosion region and an erosion region are formed, A magnet unit that is disposed on the side opposite to the film-forming substrate with respect to the target and forms the non-erosion region and the erosion region on the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the film-forming substrate, has The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion-non-erosion boundary region where the boundary between the non-erosion region and the erosion region is unclear, The magnetic field line inclination mechanism changes the magnetic field lines formed by the magnet at the one swing end so that the width expanding in the swing direction decreases. It is possible. (7) The sputtering apparatus according to one aspect of the present invention A cathode unit that emits sputtering particles toward the film formation region of the substrate to be film-formed, A target in which an erosion region is formed, A magnet unit that is disposed on the opposite side of the target from the substrate to be film-formed and forms the erosion region in the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface between the magnet unit and the substrate to be film-formed, having The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism changes the magnetic field lines formed by the magnet at the one swing end so that the width expanding in the swing direction decreases, The magnet has a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, and includes The magnet unit has a plurality of the magnets arranged side by side in the swing direction, The magnetic field line inclination mechanism has a swing end magnetic body portion disposed adjacent to the central magnet portion in the swing direction in the magnet located at the one swing end, It is possible. (8) The sputtering apparatus according to one aspect of the present invention A cathode unit that emits sputter particles toward the formation region of the film-forming substrate is A target in which a non-erosion region and an erosion region are formed, A magnet unit that is disposed on the side opposite to the film-forming substrate with respect to the target and forms the non-erosion region and the erosion region on the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the film-forming substrate, has The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion-non-erosion boundary region where the boundary between the non-erosion region and the erosion region is unclear, The magnetic field line inclination mechanism has a magnet inclination scanning unit that inclines the magnet in the magnet located at the one swing end so that the magnetic field lines formed by the magnet at the one swing end incline toward the other swing end. It can be. (9) The sputtering apparatus according to one aspect of the present invention A cathode unit that emits sputtering particles toward the film formation region of the substrate to be film-formed A target in which an erosion region is formed A magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface between the magnet unit and the substrate to be film-formed having The magnet unit has a magnet whose longitudinal direction extends in a swing width direction that intersects the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, has an anode that is paired with the cathode unit and is located around the target, and the magnetic field line inclination mechanism has a magnet proximity scanning unit that brings the magnet closer to the target so as to reduce the magnetic field lines formed in the magnet and reaching the anode at the one swing end. It is possible.

[0024] (1) The sputtering apparatus according to one aspect of the present invention includes a cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed, a target in which an erosion region is formed, a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target, a magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface between the magnet unit and the substrate to be film-formed, and has The magnet unit has a magnet whose longitudinal direction extends in a swing width direction that intersects the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at one swing end toward the other swing end. This solves the above problems.

[0025] According to the above configuration, in the swing region which is the range in which the magnet unit swings, when the magnet unit is located at one swing end, among the magnet units, the magnetic field lines formed by the magnet at the position in contact with one swing end can be inclined toward the other swing end by the magnetic field line inclination mechanism. Therefore, it is possible to reduce the electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the decrease in plasma density. As a result, the erosion-non-erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion-non-erosion boundary region can be reduced. At the same time, it is possible to suppress fluctuations in the supply voltage, suppress fluctuations in the plasma density due to the rocking position of the magnet, stabilize the plasma generation state, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics.

[0026] (2) The sputtering apparatus according to one aspect of the present invention is, in the above (1), The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at the one rocking end toward the other rocking end. This can be done.

[0027] According to the above configuration, in the rocking region which is the range in which the magnet unit rocks, when the magnet unit is located at one rocking end, among the magnet units, the magnetic field lines formed by the magnet at the position in contact with one rocking end can be pushed toward the other rocking end by the magnetic field line inclination mechanism. Therefore, it is possible to reduce the electrons absorbed by the anode. Therefore, it is possible to suppress the plasma from being absorbed and the plasma density from decreasing.

[0028] (3) The sputtering apparatus according to one aspect of the present invention is, in the above (2), The magnet is A central magnet portion which is a magnetic pole arranged linearly and directed toward the target, A peripheral magnet portion which is a magnetic pole directed toward the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, And is provided with The magnet unit has a plurality of the magnets arranged side by side in the rocking direction, The magnetic field line inclination mechanism has a rocking end central magnet portion formed smaller than the central magnet portion of the adjacent magnet in the magnet located at the one rocking end. This can be done.

[0029] According to the above configuration, in the swing region which is the range in which the magnet unit swings, when the magnet unit is located at one swing end, among the magnet unit, with respect to the magnet located at a position in contact with one swing end, the magnetic field line inclination mechanism can push the magnetic field lines formed between the swing end central magnet portion and the peripheral magnet portion closer to one swing end than the swing end central magnet portion, in the swing direction, toward the other swing end. Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the absorption of plasma and the decrease in plasma density. This is because the swing end central magnet portion is formed small, and the inclination of the magnetic field lines formed by the peripheral magnet portion closer to one swing end than the swing end central magnet portion can form the magnetic field lines so as to approach the normal line of the target surface in the swing direction.

[0030] Here, the swing end central magnet portion being formed small means that the magnetic force of the swing end central magnet portion becomes smaller than the magnetic force of the central magnet portion of the adjacent magnet. Specifically, the swing end central magnet portion being formed small means that the volume of the swing end central magnet portion, particularly the width dimension in the swing direction, is formed small. Alternatively, the swing end central magnet portion being formed small may mean that the thickness dimension of the swing end central magnet portion in the normal direction of the target is formed small.

[0031] (4) The sputtering apparatus according to one aspect of the present invention is, in the above (2), the magnet is, a central magnet portion which is a magnetic pole arranged linearly and directed toward the target, a magnetic pole directed toward the target, having a different polarity from the central magnet portion, having longitudinal straight portions extending in parallel at equal intervals on both sides of the central magnet portion and bridging portions bridging the ends of both the longitudinal straight portions, and a peripheral magnet portion surrounding the periphery of the central magnet portion along the target surface, and includes, the magnet unit has a plurality of the magnets arranged side by side in the swing direction, In the magnet located at the one swinging end of the magnetic field line tilting mechanism, the swinging end longitudinal straight line portion formed larger than the longitudinal straight line portion of the adjacent magnet is provided. This is possible.

[0032] According to the above configuration, in the swinging region which is the swinging range of the magnet unit, when the magnet unit is located at one swinging end, for the magnet located at the position in contact with one swinging end among the magnet units, the magnetic field line tilting mechanism can push the magnetic field lines formed between the central magnet portion and the swinging end longitudinal straight line portion closer to one swinging end than the central magnet portion, in the swinging direction, toward the other swinging end. Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the plasma from being absorbed and the plasma density from decreasing. This is because, since the swinging end longitudinal straight line portion is formed large, the inclination of the magnetic field lines formed by the swinging end longitudinal straight line portion closer to one swinging end than the central magnet portion can form the magnetic field lines so as to approach the normal line of the target surface in the swinging direction.

[0033] Here, that the swinging end longitudinal straight line portion is formed large means that the magnetic force of the swinging end longitudinal straight line portion closer to one swinging end than the central magnet portion becomes larger than the magnetic force of the longitudinal straight line portion of the adjacent magnet. Specifically, that the swinging end longitudinal straight line portion is formed large means that the volume of the swinging end longitudinal straight line portion, particularly, the width dimension in the swinging direction is formed large. Alternatively, that the swinging end longitudinal straight line portion is formed large may mean that the thickness dimension of the swinging end longitudinal straight line portion in the normal direction of the target is formed large.

[0034] Furthermore, the statement that the longitudinal straight portion of the swinging end is formed to be large may mean that the magnetic force of the longitudinal straight portion of the swinging end closer to one swinging end than the central magnet portion is larger than the magnetic force of the longitudinal straight portion adjacent to the central magnet portion of the same magnet across the central magnet portion in the swinging direction. Specifically, the statement that the longitudinal straight portion of the swinging end is formed to be large may mean that the volume of the longitudinal straight portion of the swinging end, particularly the width dimension in the swinging direction, is formed larger than the width dimension of the longitudinal straight portion adjacent to the central magnet portion of the same magnet across the central magnet portion. Alternatively, the statement that the longitudinal straight portion of the swinging end is formed to be large may mean that the thickness dimension of the longitudinal straight portion of the swinging end in the normal direction of the target is formed larger than the thickness dimension of the longitudinal straight portion adjacent to the central magnet portion of the same magnet across the central magnet portion in the swinging direction.

[0035] (5) In one aspect of the present invention, the sputtering apparatus according to the above (2), the magnet is, a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, and includes, the magnet unit has a plurality of the magnets arranged side by side in the swinging direction, the magnetic field line inclination mechanism has, in the magnet located at one swinging end, a swinging end inclined central magnet portion that is inclined toward the other swinging end with respect to the central magnet portion of the adjacent magnet, which is possible.

[0036] According to the above configuration, in the swing region which is the range where the magnet unit swings, when the magnet unit is located at one of the swing ends, among the magnet units, with respect to the magnet located at the position in contact with one of the swing ends, since the swing end inclined central magnet portion is inclined toward the other end, the magnetic field lines formed between the swing end inclined central magnet portion and the peripheral magnet portion closer to one of the swing ends than this swing end inclined central magnet portion can be pushed toward the other swing end in the swing direction. Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the absorption of plasma and the decrease in plasma density. This is because the swing end inclined central magnet portion is formed to be inclined toward the other end, and the inclination of the magnetic field lines formed by the peripheral magnet portion closer to one of the swing ends than the swing end inclined central magnet portion can form magnetic field lines that approach the normal line of the target surface in the swing direction. Here, the swing end inclined central magnet portion being formed to be inclined toward the other end means that the magnetic force of the swing end inclined central magnet portion is inclined toward the other end.

[0037] (6) The sputtering apparatus according to one aspect of the present invention is as described in (2) above, The magnet is, a central magnet portion which is a magnetic pole arranged linearly and directed toward the target, a peripheral magnet portion which is a magnetic pole directed toward the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, and includes, the magnet unit has a plurality of the magnets arranged side by side in the swing direction, the magnetic field line inclination mechanism has an auxiliary magnet arranged adjacent to the peripheral magnet portion at a position outside the swing region rather than the one swing end, and can be like this.

[0038] According to the above configuration, in the swing region which is the range where the magnet unit swings, when the magnet unit is located at one swing end, among the magnet units, for the magnet located at the position in contact with one swing end, the magnetic field lines formed by the magnet located at one swing end can be tilted by using the magnetic field formed by the auxiliary magnet. Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the plasma from being absorbed and the decrease in plasma density. Thereby, the erosion - non - erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion - non - erosion boundary region can be reduced. At the same time, it is possible to suppress the fluctuation of the supply voltage, suppress the fluctuation of the plasma density due to the swing position of the magnet, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics by stabilizing the plasma generation state.

[0039] (7) The sputtering apparatus according to one aspect of the present invention is, in the above (2), has an anode that is paired with the cathode unit and is located around the target, the magnetic field line inclination mechanism has a swing - end outer magnet part located outside the swing region rather than the one swing end on the back surface of the anode, can be.

[0040] According to the above configuration, in the swing region which is the range where the magnet unit swings, when the magnet unit is located at one swing end, among the magnet units, for the magnet located at the position in contact with one swing end, the magnetic field lines formed by the magnet located at one swing end can be tilted by using the magnetic field formed by the swing - end outer magnet part (auxiliary magnet). Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the plasma from being absorbed and the decrease in plasma density. Thereby, the erosion - non - erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion - non - erosion boundary region can be reduced. At the same time, it is possible to suppress fluctuations in the supply voltage, suppress fluctuations in the plasma density due to the rocking position of the magnet, stabilize the plasma generation state, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics.

[0041] (8) The sputtering apparatus according to one aspect of the present invention is, in the above (1), The magnetic field line inclination mechanism changes the magnetic field lines formed by the magnet at the one rocking end so that the width of the magnetic field lines expanding in the rocking direction decreases. This can be done.

[0042] According to the above configuration, in the rocking region which is the rocking range of the magnet unit, when the magnet unit is located at one rocking end, among the magnet units, for the magnet located at the position in contact with one rocking end, the magnetic field lines formed by the magnet located at one rocking end can be formed by the magnetic field line inclination mechanism so as not to expand outside the rocking region. Therefore, it is possible to reduce the electrons attracted to the anode. Therefore, it is possible to suppress the plasma from being absorbed and the plasma density from decreasing. As a result, the erosion - non - erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion - non - erosion boundary region can be reduced. At the same time, it is possible to suppress fluctuations in the supply voltage, suppress fluctuations in the plasma density due to the rocking position of the magnet, stabilize the plasma generation state, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics.

[0043] (9) The sputtering apparatus according to one aspect of the present invention is, in the above (8), The magnet is a central magnet portion which is a linear - arranged magnetic pole facing the target, and a peripheral magnet portion which is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface. It includes The magnet unit has the magnets arranged in a plurality of rows in the swinging direction. The magnetic field line inclination mechanism has, in the magnet located at the one swinging end, a swinging end magnetic body portion arranged adjacent to the central magnet portion in the swinging direction. It can be.

[0044] According to the above configuration, in the swinging region which is the range where the magnet unit swings, when the magnet unit is located at one swinging end, among the magnet units, with respect to the magnet at the position in contact with one swinging end, the swinging end magnetic body portion can be formed so as not to expand the magnetic field lines formed between the central magnet portion and the peripheral magnet portion outside the swinging region in the swinging direction. Therefore, it is possible to reduce the electrons attracted to the anode. Therefore, it is possible to suppress the plasma from being attracted and the plasma density from decreasing. This is because, since the swinging end magnetic body portion is arranged adjacent to the central magnet portion, it is possible to form the magnetic field lines formed by the peripheral magnet portion closer to one swinging end than the central magnet portion so as not to expand outside the swinging region.

[0045] Here, the swinging end magnetic body portion can be arranged at a position close to one end portion of the central magnet portion. Alternatively, the swinging end magnetic body portion can be arranged at a position close to the other end portion of the central magnet portion. Or, the swinging end magnetic body portion can be arranged at both side positions of the central magnet portion in the swinging direction.

[0046] (10) The sputtering apparatus according to one aspect of the present invention is as described in (1) above. The magnetic field line inclination mechanism has, in the magnet located at the one swinging end, a magnet inclination scanning portion that inclines the magnet so that the magnetic field lines formed by the magnet at the one swinging end are inclined toward the other swinging end. It can be.

[0047] According to the above configuration, in the swing region which is the range in which the magnet unit swings, when the magnet unit is located at one of the swing ends, with respect to the magnet at the position in contact with one of the swing ends among the magnet units, by tilting the magnet located at one of the swing ends by the magnet tilt scanning unit, the magnetic field formed from the magnet can be tilted toward the other end. Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the plasma from being absorbed and the decrease in plasma density. Thereby, the erosion - non - erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion - non - erosion boundary region can be reduced. At the same time, it is possible to suppress the fluctuation of the supply voltage, suppress the fluctuation of the plasma density due to the swing position of the magnet, stabilize the plasma generation state, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics distribution.

[0048] (11) The sputtering apparatus according to one aspect of the present invention is, in the above (1), has an anode that is paired with the cathode unit and is located around the target, The magnetic field line inclination mechanism has a magnet proximity scanning unit that brings the magnet closer to the target so as to reduce the magnetic field lines formed in the magnet and reaching the anode in the magnet located at the one swing end. It can be done.

[0049] According to the above configuration, in the swing region which is the range in which the magnet unit swings, when the magnet unit is located at one of the swing ends, with respect to the magnet at the position in contact with one of the swing ends among the magnet units, by bringing the magnet proximity scanning unit closer to the target located at one of the swing ends, the magnetic field formed from the magnet can be made to be at a position near the target and not spread outside the swing region in the swing direction. Therefore, it becomes possible to reduce the electrons absorbed by the anode. As a result, it is possible to suppress the absorption of plasma and the decrease in plasma density. Thereby, the erosion - non - erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion - non - erosion boundary region can be reduced. At the same time, it is possible to suppress the fluctuation of the supply voltage, suppress the fluctuation of the plasma density due to the swinging position of the magnet, stabilize the plasma generation state, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics distribution.

[0050] A sputtering apparatus according to an aspect of the present invention A cathode unit that emits sputtering particles toward the formation region of the substrate to be film - formed A target in which an erosion region is formed A magnet unit provided on the side opposite to the substrate to be film - formed with respect to the target and having a magnet that forms the erosion region on the target A magnet unit scanning unit capable of reciprocating between one swing end and the other swing end in the swing direction (scanning direction) along the substrate surface between the magnet and the substrate to be film - formed As the magnetic field line inclination mechanism, along the magnet located at the one swing end among the plurality of magnets extending in the swing width direction intersecting the swing direction along the substrate surface, an auxiliary magnet that inclines the magnetic field lines formed by the magnet located at the one swing end toward the other swing end can have.

[0051] As a result, at one swing end of the magnet unit, the magnetic field lines formed by the magnet located at the one swing end can be tilted by using the magnetic field generated by the auxiliary magnet. Therefore, it is possible to reduce the electrons attracted to the anode. As a result, it is possible to suppress the absorption of plasma and the decrease in plasma density. Thereby, the erosion - non - erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion - non - erosion boundary region can be reduced. At the same time, it is possible to suppress fluctuations in the supply conversion voltage, suppress fluctuations in plasma density due to the swing position of the magnet, stabilize the plasma generation state, and effectively suppress the occurrence of variations in the film thickness distribution and film quality characteristics distribution.

[0052] The sputtering apparatus of the present invention the auxiliary magnet of the magnetic field line tilting mechanism is arranged on the side opposite to the other swing end with respect to the one swing end along the magnet located at the one swing end, and the auxiliary magnet can swing integrally with the magnet.

[0053] Thereby, regardless of the swing position of the magnet, the decrease in the magnetic field lines from the magnet is suppressed, the plasma generation state is stabilized, the formation of the erosion - non - erosion boundary region is reduced, the generation of particles is suppressed, and the occurrence of variations in the film thickness distribution and film quality characteristics distribution can be suppressed.

[0054] The sputtering apparatus of the present invention the auxiliary magnet of the magnetic field line tilting mechanism can be a magnet having the same polarity as the magnet located at the one swing end.

[0055] As a result, the magnetic field lines from the magnet that generates plasma can be repelled by the magnetic field lines from the auxiliary magnet, and can be tilted in a predetermined direction while maintaining the required magnetic strength (magnetic flux density). Therefore, without causing a decrease in plasma density, it is possible to suppress the formation of an erosion - non - erosion boundary region, suppress particle generation, and suppress variations in film thickness distribution and film quality characteristics distribution.

[0056] The sputtering apparatus of the present invention is The magnetic strength of the auxiliary magnet of the magnetic field line tilting mechanism can be equal to or smaller than the magnetic strength of the magnet located at the one swing end.

[0057] As a result, the magnetic field lines from the magnet that generates plasma can be tilted at a predetermined angle without being overly tilted by the magnetic field lines from the auxiliary magnet. Therefore, without causing an unnecessary decrease in plasma density and without generating an unnecessary non - erosion boundary region, it is possible to suppress the formation of an erosion - non - erosion boundary region, suppress particle generation, and suppress variations in film thickness distribution and film quality characteristics distribution.

[0058] The sputtering apparatus of the present invention is The auxiliary magnet of the magnetic field line tilting mechanism can have a protrusion that protrudes toward the target along the magnet.

[0059] As a result, the magnetic field lines of the auxiliary magnet can be concentrated and formed from the protrusions. Thereby, without the magnetic field lines of the auxiliary magnet being dispersed, it becomes possible to efficiently incline the magnetic field lines from the magnet that generates the plasma. Therefore, the auxiliary magnet can be miniaturized and lightened, and the magnet and the auxiliary magnet can be swung without imposing an excessive burden on the magnet unit scanning section. Thereby, without causing a decrease in plasma density and without generating an unnecessary non-erosion boundary region, it is possible to suppress the formation of an erosion-non-erosion boundary region, suppress particle generation, and suppress variations in film thickness distribution and film quality characteristics distribution.

[0060] The sputtering apparatus of the present invention is The auxiliary magnet of the magnetic field line inclination mechanism can be attached and fixed to a yoke that is disposed on the opposite side of the magnet away from the target and forms a magnetic circuit with the magnet.

[0061] As a result, it becomes possible to swing integrally with the magnet, and it is possible to keep the inclination of the magnetic field lines of the auxiliary magnet with respect to the magnet at one end of the swing constant regardless of the swing position. In addition, the magnetism of the auxiliary magnet can also be incorporated into the magnetic circuit of the magnet formed together with the yoke, and plasma can be generated more efficiently.

[0062] The sputtering apparatus of the present invention is The cathode unit is The magnet is disposed on a flat yoke having a central region made of a magnetic material on its surface, It has a central magnet portion linearly arranged in the central region of the yoke and a peripheral magnet portion provided around the central magnet portion, and has a parallel region where the central magnet portion and the peripheral magnet portion are parallel to each other, A magnetic circuit provided on the surface of the yoke, A backing plate disposed overlapping the magnetic circuit, As the magnetic field line inclination mechanism, a linear auxiliary magnet parallel to the central magnet portion and along the peripheral magnet portion at the swing end, is provided with, the auxiliary magnet is fixed to the yoke via an auxiliary yoke, the auxiliary yoke can be made of a magnetic material or a dielectric.

[0063] Thereby, the magnetic pole surface of the peripheral magnet portion is arranged along a plane parallel to the substrate to be film-formed, and the magnetic field lines in the direction in which the peripheral magnet located at one end of the swing in this swing direction is separated from the swing other end rather than in the direction orthogonal to the magnetic pole surface are inclined at least in the direction from the magnetic pole surface to the swing other end. Even when the magnet reaches the swing position closest to the anode, electrons attracted to the anode are suppressed, the decrease in plasma density at the periphery in the swing direction is prevented, and the formation of an erosion-non-erosion boundary region is suppressed without generating an unnecessary non-erosion boundary region, thereby suppressing particle generation and suppressing variations in film thickness distribution and film quality characteristics distribution.

[0064] The sputtering apparatus of the present invention, the auxiliary yoke and the auxiliary magnet can be removable from the yoke.

[0065] Thereby, when performing processing under different operating conditions, in order to form corresponding magnetic field lines, when varying the inclination angle of the magnetic field lines from the magnet at the swing end, it becomes possible to easily change the setting by replacing the auxiliary magnet.

[0066] The sputtering apparatus of the present invention, the yoke and the magnet are divided in the swing width direction, and these divided portions can be positioned relative to each other in the swing width direction and in the direction of approaching and separating from the target, and the auxiliary magnet in the divided portion can swing integrally with the corresponding magnet.

[0067] Accordingly, for controlling the film deposition state over the entire film deposition region, for example, when adjusting the condition of the magnetic flux density related to plasma generation in the rocking width direction, the magnet is divided to correspond to this case. When each of the divided parts moves its relative position with respect to the magnet rocking operation part in the rocking direction, the rocking width direction, or the direction orthogonal to the magnetic pole surface, it is possible to maintain, in each divided part, a state in which the magnetic field lines of the peripheral magnet that becomes one end of the rocking are inclined in a necessary direction by the auxiliary magnet.

Advantages of the Invention

[0068] According to the present invention, it is possible to maintain the necessary magnetic flux density to maintain the plasma density, suppress the generation of a blurred region around the non-erosion generation region, reduce particles, and stabilize the formed plasma distribution, thereby achieving the effect of improving the uniformity of the film thickness distribution and the film thickness characteristic distribution regardless of the rocking position of the magnet.

Brief Description of the Drawings

[0069]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Embodiments for Carrying Out the Invention

[0070] Hereinafter, a first embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing the sputtering apparatus in the present embodiment. FIG. 2 is a schematic side view showing the film formation chamber in the sputtering apparatus in the present embodiment. In the figure, reference numeral 1 denotes the sputtering apparatus.

[0071] The sputtering apparatus 1 according to the present embodiment is used, for example, when forming a TFT (Thin Film Transistor) on a substrate made of glass or the like in a manufacturing process of a semiconductor device or a manufacturing process of an FPD (flat panel display) such as a liquid crystal display or an organic EL display. The sputtering apparatus 1 according to the present embodiment is an in-line type vacuum processing apparatus that performs heat treatment, film formation treatment, etching treatment, etc. on a substrate to be processed made of glass or resin in a vacuum environment.

[0072] In the present embodiment, as the glass substrate (substrate to be film-formed, transparent substrate) 11, a rectangular substrate with a side length of about 100 mm to 2500 mm or more can be applied. Further, substrates with a thickness of 1 mm or less, substrates with a thickness of several mm, and substrates with a thickness of 10 mm or more can also be used.

[0073] As shown in FIG. 1, the sputtering apparatus 1 according to the present embodiment includes a load / unload chamber (vacuum chamber) 2, a film formation chamber (vacuum chamber) 4, and a transfer chamber (vacuum chamber) 3. The load / unload chamber 2 carries in / out a substantially rectangular glass substrate 11 (substrate to be processed) to / from the outside. The film formation chamber 4 is a pressure-resistant vacuum chamber that forms a film such as a transparent conductive film of ZnO-based or In2O3-based, a metal or oxide such as aluminum or silver, or other films on the glass substrate 11 by a sputtering method. The transfer chamber 3 is located between the film formation chamber 4 and the load / unload chamber 2, and transfers the glass substrate 11 between the film formation chamber 4 and the load / unload chamber 2 (vacuum chamber).

[0074] As shown in FIG. 1, the sputtering apparatus 1 according to the present embodiment includes a load / unload chamber (vacuum chamber) 2, a film formation chamber (vacuum chamber) 4, and a transfer chamber (vacuum chamber) 3. The load / unload chamber 2 carries in / out a substantially rectangular glass substrate 11 (substrate to be processed) to / from the outside. The film formation chamber 4 is a pressure-resistant vacuum chamber that forms a film such as a transparent conductive film of ZnO-based or In2O3-based, a metal or oxide such as aluminum or silver, or other films on the glass substrate 11 by a sputtering method. The transfer chamber 3 is located between the film formation chamber 4 and the load / unload chamber 2, and transfers the glass substrate 11 between the film formation chamber 4 and the load / unload chamber 2 (vacuum chamber).

[0075] As shown in FIG. 1, the sputtering apparatus 1 according to the present embodiment can be configured as a side sputtering type apparatus. Alternatively, as shown in FIG. 2, the sputtering apparatus 1 according to the present embodiment can be configured as a sputter down type apparatus. Furthermore, it can also be configured as a sputter up type apparatus.

[0076] Furthermore, the sputtering apparatus 1 may be provided with a film formation chamber (vacuum chamber) 4A and a load / unload chamber (vacuum chamber) 2a. These plurality of chambers, namely, the load / unload chamber 2, the load / unload chamber 2a, the film formation chamber 4, and the film formation chamber 4A, are formed so as to surround the transfer chamber 3. Such chambers are configured to have, for example, two adjacent load / unload chambers (vacuum chambers) and a plurality of processing chambers (vacuum chambers).

[0077] For example, one of the load / unload chambers 2 is a load chamber for carrying a glass substrate 11 from the outside into the inside of the sputtering apparatus 1 (vacuum processing apparatus), and the other load / unload chamber 2a is an unload chamber for carrying the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Also, a configuration in which the film forming chambers 4 and 4A perform different film forming processes may be adopted. Further, a configuration in which the film forming chambers 4 and 4A perform sputtering processes of different methods may be adopted. For example, one of the film forming chambers 4 and 4A can be configured as a side sputtering type apparatus, and the other can be configured as a sputter down type apparatus.

[0078] A partition valve (door valve) may be formed between the transfer chamber 3 and the load / unload chamber 2. Similarly, a partition valve (door valve) may be formed between the transfer chamber 3 and the load / unload chamber 2a. A partition valve (door valve) may be formed between the transfer chamber 3 and the film forming chamber 4. A partition valve (door valve) may be formed between the transfer chamber 3 and the film forming chamber 4A.

[0079] In the load / unload chamber 2, a positioning member that can set the placement position of the glass substrate 11 carried in from the outside of the sputtering apparatus 1 and can perform alignment may be arranged. Also, in the load / unload chamber 2, a rough evacuation device (rough evacuation means, low vacuum evacuation device) such as a rotary pump for evacuating the inside of this chamber to a rough vacuum is provided.

[0080] As shown in FIG. 1, a transfer device (transfer robot) 3a is arranged inside the transfer chamber 3. The transfer device 3a includes a rotating shaft, a rotation driving device for rotationally driving this rotating shaft, a robot arm attached to the rotating shaft, a robot hand formed at one end of the robot arm, and a vertical movement device for vertically moving the robot hand. The robot arm is composed of a first arm portion and a second arm portion that are orthogonal to each other and slidable in the horizontal direction respectively. The transfer device 3a can move the glass substrate 11, which is the object to be transferred, between each of the load / unload chamber 2, the load / unload chamber 2a, the film forming chamber 4, the film forming chamber 4A, and the transfer chamber 3.

[0081] As shown in FIG. 1, the film forming chamber 4 is provided with a cathode device 10, a substrate holding portion 13 that is a substrate holder having a mask or the like, and a gas control portion 14 including a gas introduction device (gas introduction means) and a high-vacuum evacuation device (high-vacuum evacuation means). As shown in FIG. 1, the inside of the film forming chamber 4 is composed of a front side space 41 where the surface of the glass substrate 11 is exposed during film formation and a back side space 42 located on the back side of the glass substrate 11 during film formation. The cathode device 10 is disposed in the front side space 41.

[0082] The cathode device 10 is erected at the position farthest from the transfer port 4a connected to the transfer chamber 3 inside the side sputtering type film forming chamber 4 shown in FIG. 1. Also, the cathode device 10 is disposed above and parallel to the glass substrate 11 at the horizontal position transferred from the transfer port 4a to the transfer chamber 3 inside the down sputtering type film forming chamber 4 shown in FIG. 2. Here, a mask 20 may be disposed around the film forming port 4b.

[0083] As shown in FIG. 1 or FIG. 2, the substrate holding portion (substrate holding mechanism) 13 is provided inside the back side space 42. The substrate holding portion 13 is capable of supporting the glass substrate 11 carried in from the transfer port 4a. As shown in FIG. 1, the substrate holding unit 13 holds the glass substrate 11 such that the target 23 (to be described later) and the surface to be processed (film-forming surface) 11a of the glass substrate 11 face each other during film formation. During film formation, the substrate holding unit 13 holds the glass substrate 11 at a vertical position facing the erected cathode device 10.

[0084] As shown in FIG. 2, the substrate holding unit 13 (substrate holding means) holds the glass substrate 11 such that the target 23 (to be described later) and the surface to be processed (film-forming surface) 11a of the glass substrate 11 face each other during film formation. During film formation, the substrate holding unit 13 holds the glass substrate 11 at a horizontal position facing the downward-facing cathode device 10. The substrate holding unit 13 may be provided inside the side sputtering type film formation chamber 4 shown in FIG. 1, at a lower position in the back side space 42, with a swing axis extending substantially parallel to the transfer port 4a and / or the film formation port 4b, and a holding unit attached to the swing axis for holding the back surface of the glass substrate 11.

[0085] The gas introduction device (gas introduction means) in the gas control unit 14 introduces gas into the film formation chamber 4. The high vacuum evacuation device (high vacuum evacuation means) in the gas control unit 14 is a turbo molecular pump or the like for evacuating the inside of the film formation chamber 4 to a high vacuum.

[0086] The cathode device 10 is swingable in the horizontal direction along the main surface of the glass substrate 11 with respect to the glass substrate 11 at the film formation position (plasma treatment position) inside the side sputtering type film formation chamber 4 shown in FIG. 1. In this case, the cathode device 10 may be configured in a box shape called a cathode box. The cathode device 10 is swingable in the horizontal direction along the main surface of the glass substrate 11 with respect to the glass substrate 11 at the film formation position (plasma treatment position) inside the down sputtering type film formation chamber 4 shown in FIG. 2.

[0087] In the following description, the cathode device 10 inside the side sputtering type film deposition chamber 4 shown in FIG. 1 will be described. However, the cathode device 10 inside the down sputtering type film deposition chamber 4 shown in FIG. 2 can have the same configuration, except that the rocking direction is different.

[0088] FIG. 3 is a schematic diagram showing the positional relationship between the glass substrate and the configuration of the cathode device in the sputtering apparatus of the present embodiment. As shown in FIG. 3, the cathode device 10 has one cathode unit 22. As shown in FIG. 3, the cathode unit 22 is arranged along the ZX plane facing the surface of the glass substrate 11. In the cathode unit 22, the target 23, the backing plate 24, and the magnet unit 21 are arranged in this order in the Y direction away from the position close to the glass substrate 11.

[0089] In FIG. 3, the cathode device 10 is described as a vertical type in which the target 23 is erected in the vertical direction substantially parallel to the glass substrate 11 in accordance with the side sputtering type shown in FIG. 1. Further, the configuration of the present embodiment can also correspond to a similar configuration in the case of a down-depo in which the glass substrate 11 is arranged below the target 23 in a horizontal state in accordance with the down sputtering type shown in FIG. 2 by correspondingly reading the directions of XYZ.

[0090] FIG. 4 is a front view showing the positional relationship between the glass substrate, the target, and the magnet unit in the sputtering apparatus of the present embodiment. The target 23 is arranged in a flat plate shape along the ZX plane facing the glass substrate 11. The target 23 is exposed at a position facing the glass substrate 11 on the surface of the cathode box.

[0091] As shown in FIG. 4, the target 23 has a width longer than that of the glass substrate 11 in the Z direction. Further, the target 23 has a width larger than that of the glass substrate 11 in the X direction, which is the rocking direction. An anode 28 is provided around the target 23. The anode 28 is provided on the entire circumference of the target 23. The anode 28 covers the backing plate 24 protruding from the target 23 with respect to the glass substrate 11.

[0092] The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11. The backing plate 24 is joined to the surface of the target 23 that does not face the glass substrate 11. A control unit 26 having a DC power source is connected to the backing plate 24. The DC power supplied from the DC power source is supplied to the target 23 through the backing plate 24. Instead of the DC power source as the cathode power source, a DC power source, a pulse power source, or an RF power source may be used. The cathode unit 22 has a target 23 disposed along the ZX plane facing the film formation surface 11a of the glass substrate 11. The cathode unit 22 has a magnet unit 21 in which a plurality of magnets 25 are arranged on the back side of the target 23, that is, at a position close to the backing plate 24 with respect to the target 23.

[0093] In the magnet unit 21, a plurality of magnets 25 are arranged in parallel. The magnet 25 is a multi-piece magnet. The longitudinal directions of the plurality of magnets 25 are all arranged along the Z direction. The plurality of magnets 25 are arranged parallel to each other along the ZX plane. The magnet 25 extends in the Y direction, which is the swing width direction intersecting the X direction, where the longitudinal direction thereof is the swing direction along the surface of the glass substrate 11. In the X direction, the plurality of magnets 25 are arranged at equal intervals from each other.

[0094] In the present embodiment, for example, nine magnets 25 are adjacent in the X direction. In the magnet unit 21, the number of magnets 25 can be appropriately set according to the area of the glass substrate 11, the area of the target 23, or the swing range of the magnet unit 21 described later. Note that in the cathode unit 22 in the present embodiment, the target 23 is fixedly arranged with respect to the glass substrate 11, and the target 23 is fixed in the film formation chamber 4.

[0095] The magnets 25 each form a magnetic circuit. One magnet 25 forms a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. In the magnet unit 21, each magnet 25 may be configured to form a predetermined magnetic circuit by a combination of permanent magnets. In the magnet unit 21, each magnet 25 may be individually connected to the control unit 26 so that the magnetic field state generated individually can be controlled. Among the magnet units 21, a magnetic field line inclination mechanism is provided for the magnets 25 at the swing end and the swing start end at the X-direction end in the swing direction. The magnetic field line inclination mechanism will be described later.

[0096] FIG. 5 is an enlarged cross-sectional view showing an end portion in the magnet unit of the sputtering apparatus according to the present embodiment. In the magnet unit 21, as shown in FIGS. 4 to 5, the magnet 25 has a yoke 31, a central magnet portion 50, and a peripheral magnet portion 60.

[0097] The yoke 31 is a flat plate-shaped magnet base having a substantially rectangular outline as shown in FIGS. 4 and 5. The yoke 31 has a central region 25a on its surface. The yoke 31 can be formed of SUS430 or the like. The central magnet portion 50 is a bar-shaped composite magnet body having the Z direction as its longitudinal direction. The central magnet portion 50 is disposed at the central position in the X direction in the central region 25a. The central magnet portion 50 is disposed in a substantially straight line along the Z direction. The peripheral magnet portion 60 is spaced apart from the central magnet portion 50 in the plane of the magnet base (yoke) 31 and is provided around the central magnet portion 50. The peripheral magnet portion 60 is a substantially oval annular magnet disposed along the ZX plane.

[0098] As shown in FIGS. 4 and 5, both the central magnet portion 50 and the peripheral magnet portion 60 have a magnetic pole surface (magnetic pole plane) 30 facing in the Z direction. Both the central magnet portion 50 and the peripheral magnet portion 60 have a magnetic pole surface 30 along the ZX plane. The central magnet portion 50 and the peripheral magnet portion 60 have different polarities from each other. The central magnet portion 50 and the peripheral magnet portion 60 constitute a magnetic circuit. The central magnet portion 50 and the peripheral magnet portion 60 form a parallel region that is parallel to each other in the central region 25a in the Z direction, which is the longitudinal direction of the magnet 25.

[0099] The central magnet portion 50 is divided into a plurality of parts in the Z direction in which it extends. The individual magnets of the divided central magnet portion 50 are arranged adjacent to each other continuously in the Z direction. The central magnet portion 50 has a configuration in which a plurality of magnets are arranged in a rod shape.

[0100] Similarly, the peripheral magnet portion 60 is divided into a plurality of parts along the Z direction and the X direction in which it extends annularly. The individual magnets of the divided peripheral magnet portion 60 are arranged adjacent to each other continuously in the Z direction and the X direction. The peripheral magnet portion 60 has a configuration in which a plurality of magnets are arranged in an annular shape. The peripheral magnet portion 60 is arranged in an oval shape, in other words, a racetrack shape, in the ZX plane. Alternatively, the peripheral magnet portion 60 is arranged in a shape close to a rectangle with rounded corners at the four corners in the ZX plane.

[0101] Here, the oval shape is a shape in which a circle divided into two parts on a plane is separated in a direction orthogonal to the dividing line, and the ends at the divided and opposing positions are connected by two parallel straight lines. Alternatively, the racetrack shape means a contour shape in which the four corners of a rectangle are rounded and the short sides are rounded into arcs to the extent that they disappear.

[0102] As shown in FIGS. 4 and 5, the peripheral magnet portion 60 has a longitudinal straight portion 61, a longitudinal straight portion 62, and a bridging portion 63. The longitudinal straight portions 61 and 62 are portions of the peripheral magnet portion 60 that extend in the Z direction. Both the longitudinal straight portion 61 and the longitudinal straight portion 62 extend parallel to both sides of the central magnet portion 50 in the ZX plane. The longitudinal straight portions 61 and 62 have the same separation distance from each other in the X direction over the entire length in the Z direction. The longitudinal straight portions 61 and 62 are arranged at equal intervals in the X direction over the entire length in the Z direction.

[0103] The longitudinal straight portions 61 and 62 are formed to have the same overall length in the Z direction. The longitudinal straight portions 61 and 62 are arranged at the same position as each other in the Z direction with respect to the central magnet portion 50. The longitudinal straight portions 61 and 62 are formed to have the same width dimension in the X direction over the entire length in the Z direction. The outer peripheral surface (outer peripheral portion) of the longitudinal straight portion 61 and the outer peripheral surface (outer peripheral portion) of the longitudinal straight portion 62 are arranged along the side along the outer peripheral contour of the yoke 31 in the Z direction.

[0104] The Z-direction end portions (end faces) of the longitudinal straight portion 61 and the longitudinal straight portion 62 are arranged at the same position as each other in the Z direction. The inner peripheral surfaces (inner peripheral portions) of the longitudinal straight portion 61 and the longitudinal straight portion 62 face each other in parallel. The inner peripheral surfaces of the longitudinal straight portion 61 and the longitudinal straight portion 62 are both formed along the ZY plane.

[0105] The bridging portion 63 bridges the Z-direction end portions of the longitudinal straight portion 61 and the longitudinal straight portion 62, respectively. The bridging portion 63 has a bridging portion between the longitudinal straight portion 61 and the longitudinal straight portion 62 in the Z direction. The bridging portion 63 is arranged at the Z-direction end portion of the magnet 25. The bridging portion 63 extends from the Z-direction end portion 61a of the longitudinal straight portion 61 in the Z direction, bends in the X direction, and further bends in the Z direction to connect to the Z-direction end portion of the longitudinal straight portion 62. The bridging portion 63 is included in the end region 25b that is outside the central region 25a in the Z direction.

[0106] The peripheral magnet portion 60 is formed by combining the longitudinal straight portions 61 and 62 which are divided into a predetermined length and arranged linearly. Each magnet constituting the longitudinal straight portion 61 and the longitudinal straight portion 62 is a permanent magnet. Also, the bridging portion 63 is formed by combining parts divided into a predetermined length. Each magnet constituting the bridging portion 63 is a permanent magnet.

[0107] The radial thickness along the ZX plane of the peripheral magnet portion 60 can be formed to be substantially equal in the longitudinal straight portion 61, the longitudinal straight portion 62, and the bridging portion 63. Note that the radial thickness along the ZX plane of the peripheral magnet portion 60 may be formed smaller at the corner portion of the bridging portion 63 than in the longitudinal straight portion 61 and the longitudinal straight portion 62.

[0108] As shown in FIGS. 4 and 5, the central magnet portion 50 is formed linearly or rod-shaped in the Z direction which is the longitudinal direction. The central magnet portion 50 is formed by combining parts divided into a predetermined length and arranged linearly. Each magnet constituting the central magnet portion 50 is a permanent magnet. The central magnet portion 50 is not in contact with the peripheral magnet portion 60. The central magnet portion 50 is separated from the peripheral magnet portion 60.

[0109] The cathode device 10 includes a magnet unit scanning portion 29 that moves the magnet unit 21 along the swinging direction which is one of the scanning directions. The swinging direction is the X direction orthogonal to the Z direction in which a plurality of magnets 25 are erected in the magnet unit 21. The magnet unit scanning portion 29 changes the position of the magnet unit 21 with respect to the target 23. The magnet unit scanning portion 29 changes the positions of a plurality of magnets 25 with respect to the target 23. The magnet unit scanning portion 29 can swing without changing the relative positional relationship of the plurality of magnets 25. That is, each of the magnets 25 can be moved (swung) parallel to the particle emission surface of the target 23 by the magnet unit scanning portion 29 with respect to the target 23.

[0110] The region that the magnet unit 21 scans by the magnet unit scanning unit 29 when viewed from the Y direction is referred to as a swing region. Note that the expression "along the swing region" may be used in the sense of "along the ZX plane". When viewed from the Y direction, the swing region has a substantially rectangular contour.

[0111] The magnet unit scanning unit 29 is composed of, for example, a rail extending along the scanning direction, rollers attached to each of the two X-direction ends of the cathode unit 22, a plurality of motors for rotating each of the rollers, and the like. The magnet unit scanning unit 29 may be composed of an LM guide or the like having a rail extending along the scanning direction. The rail of the magnet unit scanning unit 29 has a width that is about the same as or longer than the target 23 in the scanning direction (X direction). Note that the magnet unit scanning unit 29 may be embodied in other configurations as long as it is possible to move a plurality of magnets 25 integrally along the scanning direction.

[0112] Among the magnet units 21, a magnetic field line inclination mechanism is provided for the magnets 25 at the swing end and the swing start end at the X-direction end, which is the swing direction. The magnetic field line inclination mechanism will be described later.

[0113] The magnetic field line inclination mechanism in the present embodiment has a swing end center magnet portion 50A formed smaller than the center magnet portion 50 of the adjacent magnet 25 in the magnet 25 located at one swing end in the swing region. As shown in FIG. 5, the swing end center magnet portion 50A is surrounded by a peripheral magnet portion 60 in the same manner as the center magnet portion 50. That is, the swing end center magnet portion 50A is disposed at substantially the same position as the center magnet portion 50 with respect to the yoke 31. The swing end center magnet portion 50A is disposed at a substantially central position between the longitudinal straight portion 61 and the longitudinal straight portion 62 in the X direction.

[0114] The difference between the central magnet portion 50A at the swing end and the central magnet portion 50 is that the width dimension in the X direction is small. The central magnet portion 50A at the swing end is formed with a smaller volume than the central magnet portion 50. The central magnet portion 50A at the swing end has a smaller width dimension in the X direction than the central magnet portion 50. The central magnet portion 50A at the swing end has a smaller width dimension in the X direction than the central magnet portion 50 in terms of the overall length in the Z direction. The central magnet portion 50A at the swing end has the same length dimension in the Z direction as the length dimension of the central magnet portion 50 in the Z direction. The central magnet portion 50A at the swing end has the same thickness dimension in the Y direction as the thickness dimension of the central magnet portion 50 in the Y direction. The central magnet portion 50A at the swing end can have substantially the same XY cross-sectional shape in terms of the overall length in the Z direction. The central magnet portion 50A at the swing end is fixed to the yoke 31 in the same manner as the central magnet portion 50.

[0115] The magnetic force density of the central magnet portion 50A at the swing end as a magnetic material is substantially the same as that of the central magnet portion 50. That is, the central magnet portion 50A at the swing end is formed using substantially the same magnet as the central magnet portion 50. Note that the central magnet portion 50A at the swing end is not limited to the above configuration as long as, as will be described later, the magnetic field lines formed by the magnet 25 at one end are inclined toward the other swing end in the X direction as compared with the case where the central magnet portion 50A at the swing end is not provided. For example, the central magnet portion 50A at the swing end can be configured to have substantially the same volume as the central magnet portion 50 and a weaker magnetic force.

[0116] In the cathode unit 22 in the present embodiment, as shown in FIGS. 3 and 4, when forming a film by discharging sputter particles by the magnet unit scanning unit 29, the magnet unit 21 is reciprocally moved between the swing end position Revers and the swing end position Forward.

[0117] In the cathode unit 22, a multi-magnet formed of a plurality of magnets 25 is collectively made into a magnet unit 21. In the cathode unit 22, the magnet unit 21 is moved by the magnet unit scanning unit 29 from the center position center in the swinging direction (X direction) to the swinging end position Forward to the right in FIGS. 3 and 4, and further from the swinging end position Forward to the left through the center position center to the swinging end position Revers, and further from the swinging end position Revers to the center position center, and one scan is completed. In the cathode unit 22, this scan is repeated a plurality of times.

[0118] At the same time, in the magnet unit 21, in each magnet 25, the central magnet portion 50 and the peripheral magnet portion 60 form a magnetic field. In the magnet 25, the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31 form a magnetic circuit. At this time, in the magnet 25 at the swinging end, the swinging end central magnet portion 50A, the peripheral magnet portion 60, and the yoke 31 form a magnetic circuit. That is, in the magnet 25 at the swinging end, by providing the swinging end central magnet portion 50A which is a magnetic field line inclination mechanism, in the magnet 25 adjacent thereto and in the magnet 25 closer to the center in the X direction, while maintaining a state where different magnetic field lines are formed, the magnet unit 21 performs scanning.

[0119] Next, in the sputtering apparatus 1 according to the present embodiment, film formation on the glass substrate 11 will be described.

[0120] First, the glass substrate 11 carried into the sputtering apparatus 1 from the outside is first placed on the positioning member in the load / unload chamber 2, and the glass substrate 11 is aligned (see FIG. 1). Next, the glass substrate 11 is supported by the robot hand of the transfer device 3a and taken out from the load / unload chamber 2. Then, the glass substrate 11 is transferred to the film formation chamber 4 via the transfer chamber 3.

[0121] In the film formation chamber 4, the substrate holding part 13 is rotated by the driving part and arranged at the horizontal placement position. Further, by a lift pin moving part (not shown), the lift pins are arranged at the preparation position protruding upward from the substrate holding part 13. In this state, the glass substrate 11 that has reached the film formation chamber 4 is inserted above the substrate holding part 13 by the transfer device 3a.

[0122] Next, the robot hand of the transfer device 3a descends and approaches the substrate holding part 13, so that the glass substrate 11 is placed on the lift pins in an aligned state at a predetermined position of the substrate holding part 13. Then, the robot hand of the transfer robot 3a retreats to the transfer chamber 3. And the lift pins descend, and the glass substrate 11 is supported on the substrate holding part 13.

[0123] Next, by rotating the substrate holding part 13, the glass substrate 11 rises to reach the vertical processing position while being held by the substrate holding part 13. Thereby, the film formation port 4b is substantially blocked by the glass substrate 11, and the glass substrate 11 is held at the film formation position. In this state, a predetermined gas atmosphere is set by the gas control part 14, plasma is generated by the control part 26, and the film formation process is performed by sputtering. The formation of the magnetic field by the magnet unit 21 during the film formation process will be described later.

[0124] When the film formation process is completed, by rotating the substrate holding part 13, the glass substrate 11 reaches the horizontal placement position while being held by the substrate holding part 13. The glass substrate 11 on which the film formation process has been completed is taken out of the film formation chamber 4 by the transfer device 3a. And the glass substrate 11 is taken out from the load / unload chamber 2 via the transfer chamber 3.

[0125] Hereinafter, the operation of the magnet unit 21 in the present embodiment will be described.

[0126] FIG. 21 is a diagram for explaining the operation of the magnetic field line inclination mechanism in the present embodiment, and is a schematic diagram showing the direction of magnetic field lines when the magnetic field line inclination mechanism is not present. First, the case where there is no magnetic field line inclination mechanism, that is, the case where the central magnet portion 50A at the swing end is not provided and all the magnets 25 have the same central magnet portion 50 will be described.

[0127] As described above, a plasma is generated between the surface 23a of the target 23 and the glass substrate 11 by the magnetic field formed by the magnet 25. In this state, film formation is performed on the surface of the glass substrate 11 by setting sputtering conditions described later.

[0128] Here, during sputtering, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50 of the S pole. A magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31. As a result, electrons are tracked along the magnetic field lines.

[0129] At this time, at the position that becomes the swing end in the swing range of the target 23, as shown in FIG. 21, the magnetic field lines from the peripheral magnet portion 60 of the N pole are directed toward the anode 28 that is close, and on the surface 23a of the target 23, the magnetic field line density decreases. That is, the density of the electrons to be tracked becomes insufficient, and the plasma density becomes insufficient. As a result, an erosion region is not formed on the surface 23a of the target 23, and non-erosion regions are formed at both ends in the X direction. The magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined leftward in the X direction and directed toward the anode 28 as they go in the Y direction.

[0130] Moreover, magnetic field lines are formed from the peripheral magnet portion 60 at the N pole to the central magnet portion 50 at the S pole. Due to these magnetic field lines, on the surface 23a of the target 23, electrons orbit around the central magnet portion 50 surrounded by the peripheral magnet portion 60 along the ZX plane. At this time, at the end in the longitudinal direction of the magnet 25 in the moving direction of the electrons, that is, the electrons that have moved in the Z direction along the central magnet portion 50, when they bend in the X direction along the bridging portion 63, their moving speed slows down and the density increases.

[0131] As a result, from the bridging portion 63 along the peripheral magnet portion 60, at the position where the electrons bend from the X direction to the Z direction, the density of the electrons decreases. As a result, erosion on the surface 23a of the target 23 decreases, and a non-erosion region is formed. This phenomenon occurs in the two magnets 25 at both ends in the X direction (oscillation ends) because the directions of the electrons orbiting around the central magnet portion 50 are reversed and cancel each other out in adjacent magnets 25. Moreover, at both ends in the X direction, the positions where the non-erosion regions are formed are on the opposite sides in the Z direction. That is, the positions where the non-erosion regions are formed at both ends in the X direction are at the diagonal positions of the target 23.

[0132] As a result, in the case where there is no magnetic field line inclination mechanism, non-erosion regions are formed at two diagonal positions among the four corners of the target 23. Also, when such non-erosion regions are formed, it is easy for other non-erosion regions to be formed at both end positions in the X direction and at positions other than the two diagonal positions. This is because when non-erosion regions are formed, the applied supply power becomes surplus without being consumed for plasma generation. This surplus power is redistributed to regions different from the non-erosion regions at both end positions in the X direction and the two diagonal positions, or is absorbed as an overall voltage (power) fluctuation. Therefore, it is considered that the plasma generation conditions vary depending on the position on the surface of the target 23 as in the case of voltage fluctuation occurrence.

[0133] Next, the case where there is a magnetic field line inclination mechanism will be described.

[0134] FIG. 6 is a diagram for explaining the operation of the magnetic field line inclination mechanism, and is a schematic diagram showing the direction of magnetic field lines when there is a central magnet portion 50A at the swing end. Here, during sputtering, in the magnet 25 that becomes the swing end in the swing range, as shown in FIG. 6, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50A of the S pole at the swing end. At this time, a magnetic circuit is formed by the central magnet portion 50A at the swing end, the peripheral magnet portion 60, and the yoke 31. Thereby, electrons are tracked along the magnetic field lines.

[0135] At this time, in the magnet 25 that becomes the swing end, as shown in FIG. 6, due to the central magnet portion 50A at the swing end, which is smaller than the central magnet portion 50, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined so as not to go toward the anode 28. That is, the magnetic field lines directed in the Y direction perpendicular to the magnetic pole plane 30 from the peripheral magnet portion 60 of the N pole are inclined rightward in the X direction compared to the case where there is no central magnet portion 50A at the swing end. That is, in the magnet 25, by providing the central magnet portion 50A at the swing end, the magnetic field lines formed at one swing end can be pushed toward the other swing end.

[0136] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 that becomes the swing end, the density of the tracked electrons is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, on the surface 23a of the target 23, the non - erosion regions formed at both ends in the X direction can be suppressed.

[0137] In addition, in the magnet 25 that serves as the swing end, a magnetic circuit is formed by the central magnet portion 50A of the swing end and the peripheral magnet portion 60, and magnetic lines of force are formed from the peripheral magnet portion 60 of the N pole toward the central magnet portion 50A of the S pole of the swing end. As a result, electrons orbiting around the central magnet portion 50A of the swing end surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal ends of the magnet 25. Therefore, at the Z-direction end of the magnet 25, an increase in the electron density is suppressed. That is, in the magnet 25 that serves as the swing end, electrons that have moved in the Z direction along the central magnet portion 50A of the swing end do not have their moving speed slowed down in the vicinity where they bend in the X direction along the bridging portion 63. Also, in the vicinity where they bend in the X direction along the bridging portion 63, an increase in the electron density is suppressed.

[0138] As a result, in the magnet 25 that serves as the swing end, a decrease in the electron density does not occur at the position where electrons bend from the longitudinal straight portion 61 or the longitudinal straight portion 62 in the X direction to the Z direction along the bridging portion 63. As a result, in the two magnets 25 that are at both ends in the X direction, the formation of a non-erosion region on the surface 23a of the target 23 can be suppressed. That is, by providing the central magnet portion 50A of the swing end in the two magnets 25 that are at both ends (swing ends) in the X direction, the formation of non-erosion regions at two diagonal locations can be suppressed. Thereby, in the target 23, the occurrence of voltage fluctuations can be suppressed. In the target 23, the formation of a non-erosion region at the end in the X direction can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to be formed other than at the ends in the X direction and the two diagonal locations.

[0139] According to the sputtering apparatus 1 in the present embodiment, by providing the swing-end central magnet portion 50A as the magnetic field line inclination mechanism, in the magnet 25 at the swing end, it is possible to suppress the magnetic field lines formed by this magnet 25 from facing the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the direction in which the magnetic field lines formed by the magnet 25 face can be set as the Y direction, or can be inclined to the right direction in FIG. 6 rather than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where the non-erosion region is formed.

[0140] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of the non-erosion region. That is, the sputtering apparatus 1 can reduce the formation of the erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0141] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the generation of the non-erosion region. Thereby, the sputtering apparatus 1 can suppress the spike fluctuation of the discharge voltage and suppress the partial fluctuation of the plasma generation conditions due to voltage fluctuations and the like. Therefore, the sputtering apparatus 1 can suppress the generation of particles and the variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0142] Hereinafter, a second embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 7 is an enlarged cross-sectional view showing an end portion of the magnet unit in the present embodiment. In the present embodiment, the difference from the above-described first embodiment is related to the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those in the above-described first embodiment, and the description thereof is omitted.

[0143] As shown in FIG. 7, in the magnet unit 21 in the present embodiment, among the swing regions, the magnet 25 located at one swing end has a swing end longitudinal straight portion 60A formed larger than the peripheral magnet portion 60 of the adjacent magnet 25. The swing end longitudinal straight portion 60A constitutes a magnetic field line inclination mechanism.

[0144] The swing end longitudinal straight portion 60A is arranged at substantially the same position as the longitudinal straight portion 61 with respect to the yoke 31, similarly to the peripheral magnet portion 60 of the adjacent magnet 25. The swing end longitudinal straight portion 60A is arranged in parallel with the central magnet portion 50, similarly to the peripheral magnet portion 60. Both ends of the swing end longitudinal straight portion 60A in the Z direction are connected to the bridging portion 63, similarly to the peripheral magnet portion 60.

[0145] The swing end longitudinal straight portion 60A is formed only in the portion of the magnet 25 located at the swing end that corresponds to the longitudinal straight portion 61 located closer to the swing end than the central magnet portion 50. That is, the swing end longitudinal straight portion 60A is not formed in the portion of the peripheral magnet portion 60 that corresponds to the longitudinal straight portion 62 closer to the adjacent magnet 25 than the central magnet portion 50. The entire length of the swing end longitudinal straight portion 60A in the Z direction has an equal separation distance from the central magnet portion 50 in the X direction.

[0146] The swing end longitudinal straight portion 60A is formed larger than the longitudinal straight portion 61 and the longitudinal straight portion 62 of the adjacent magnet 25. The swing end longitudinal straight portion 60A has a larger width dimension in the X direction than the longitudinal straight portion 61 and the longitudinal straight portion 62 at the position sandwiched by the bridging portions 63 located at both ends in the Z direction. The entire length of the swing end longitudinal straight portion 60A in the Z direction has an equal width dimension in the X direction. Note that the width dimension of the swing end longitudinal straight portion 60A in the X direction at the portion connected to the bridging portion 63 may be made equal to that of the bridging portion 63.

[0147] The radial thickness along the ZX plane of the swing end longitudinal straight portion 60A can be formed to be substantially equal to the thicknesses of the longitudinal straight portion 61, the longitudinal straight portion 62, and the bridging portion 63. The oscillating end longitudinal straight portion 60A is made of a magnet having the same polarity as the peripheral magnet portion 60. The oscillating end longitudinal straight portion 60A, the longitudinal straight portion 62, the bridging portion 63, and the central magnet portion 50 constitute a magnetic circuit. The oscillating end longitudinal straight portion 60A is divided into a predetermined length and combined in the same manner as the longitudinal straight portion 61 and the longitudinal straight portion 62. Each magnet constituting the oscillating end longitudinal straight portion 60A is a permanent magnet.

[0148] The magnetic force density as a magnetic material of the oscillating end longitudinal straight portion 60A is substantially the same as that of the longitudinal straight portion 61 and the longitudinal straight portion 62. That is, the oscillating end longitudinal straight portion 60A is formed using substantially the same magnet as the central magnet portion 50. Note that, as will be described later, the oscillating end longitudinal straight portion 60A is not limited to the above configuration as long as the magnetic field lines formed by the magnet 25 at one end are inclined toward the other oscillating end in the X direction compared to the case where the oscillating end longitudinal straight portion 60A is not present. For example, the oscillating end longitudinal straight portion 60A can be configured to have substantially the same volume as the central magnet portion 50 and a strong magnetic force.

[0149] FIG. 8 is a diagram for explaining the operation of the magnetic field line inclination mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the oscillating end longitudinal straight portion 60A is present. Here, during sputtering, in the magnet 25 that becomes the oscillating end in the oscillating range, as shown in FIG. 8, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50 of the S pole. At this time, a magnetic circuit is formed by the oscillating end longitudinal straight portion 60A, the longitudinal straight portion 62, the bridging portion 63, the central magnet portion 50, and the yoke 31. As a result, electrons are tracked along the magnetic field lines.

[0150] At this time, in the magnet 25 that serves as the swinging end, as shown in FIG. 8, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined so as not to face the anode 28 by the swinging end longitudinal straight portion 60A that is larger than the longitudinal straight portion 61. That is, the magnetic field lines that extend from the peripheral magnet portion 60 of the N pole in the Y direction perpendicular to the magnetic pole plane 30 are inclined to the right in the X direction as compared with the case where there is no swinging end longitudinal straight portion 60A. That is, in the magnet 25, by providing the swinging end longitudinal straight portion 60A, the magnetic field lines formed at one swinging end can be pushed toward the other swinging end. In the magnet 25 that serves as the swinging end, the magnetic field lines formed by the swinging end longitudinal straight portion 60A and the central magnet portion 50 are inclined to the right in the X direction, but the magnetic field lines formed by the longitudinal straight portion 62 and the central magnet portion 50 can be regarded as being substantially the same as in the case where there is no swinging end longitudinal straight portion 60A.

[0151] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 that serves as the swinging end, the electron density to be tracked is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, on the surface 23a of the target 23, the non-erosion regions formed at both ends in the X direction can be suppressed.

[0152] Further, in the magnet 25 that serves as the swinging end, a magnetic circuit is formed by the swinging end longitudinal straight portion 60A, the longitudinal straight portion 62, the bridging portion 63, and the central magnet portion 50, and magnetic field lines are formed from the peripheral magnet portion 60 of the N pole toward the swinging end central magnet portion 50A of the S pole. Thereby, the electrons that circulate around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal end of the magnet 25. Therefore, at the longitudinal end in the Z direction of the magnet 25, the increase in the electron density is suppressed. That is, in the magnet 25 that serves as the swinging end, the electrons that have moved in the Z direction along the central magnet portion 50 do not have their moving speed slowed down in the vicinity of bending in the X direction along the bridging portion 63. Also, in the vicinity of bending in the X direction along the bridging portion 63, the increase in the electron density is suppressed.

[0153] As a result, in the magnet 25 serving as the swing end, at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 60A of the swing end, or at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62, a decrease in electron density does not occur. As a result, formation of non-erosion regions on the surface 23a of the target 23 can be suppressed by the two magnets 25 at both ends in the X direction. That is, by providing the longitudinal straight portion 60A of the swing end in the two magnets 25 at both ends (swing ends) in the X direction, formation of non-erosion regions at two diagonal locations can be suppressed. Thereby, in the target 23, generation of voltage fluctuations can be suppressed. In the target 23, formation of non-erosion regions at the X-direction ends can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to be formed other than the ends in the X direction and the two diagonal locations.

[0154] According to the sputtering apparatus 1 in the present embodiment, by providing the longitudinal straight portion 60A of the swing end as the magnetic field line inclination mechanism, in the magnet 25 of the swing end, the magnetic field lines formed by this magnet 25 can be made not to face the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the sputtering apparatus 1 can make the magnetic field lines formed by the magnet 25 in the Y direction or incline them more to the right in FIG. 8 than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where non-erosion regions are formed.

[0155] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the occurrence of non-erosion regions. That is, the sputtering apparatus 1 can reduce the formation of an erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0156] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the occurrence of non-erosion regions. As a result, the sputtering apparatus 1 can suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations and the like. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0157] Hereinafter, a third embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 9 is an enlarged cross-sectional view showing an end portion of the magnet unit in the present embodiment. In the present embodiment, what is different from the above-described first and second embodiments is the point regarding the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those in the above-described first and second embodiments, and the description thereof is omitted.

[0158] As shown in FIG. 9, the magnet unit 21 in the present embodiment has a swing-end inclined central magnet portion 50B in which a magnet 25 located at one swing end in the swing region is inclined toward the other swing end with respect to the central magnet portion 50 of the adjacent magnet 25. The swing-end inclined central magnet portion 50B constitutes a magnetic field line inclination mechanism.

[0159] As shown in FIG. 9, the swing-end inclined central magnet portion 50B is surrounded by a peripheral magnet portion 60 in the same manner as the central magnet portion 50. That is, the swing-end inclined central magnet portion 50B is disposed at substantially the same position as the central magnet portion 50 when viewed in the Y direction with respect to the yoke 31. The swing-end inclined central magnet portion 50B is disposed at a substantially central position between the longitudinal straight portion 61 and the longitudinal straight portion 62 in the X direction.

[0160] The rocking-end inclined central magnet portion 50B is different from the central magnet portion 50 in that the mounting direction with respect to the yoke 31 is inclined. The rocking-end inclined central magnet portion 50B is formed to have the same volume as the central magnet portion 50. The rocking-end inclined central magnet portion 50B has the same width dimension in the X direction as the central magnet portion 50. The rocking-end inclined central magnet portion 50B has the same width dimension in the X direction as the central magnet portion 50 over the entire length in the Z direction. The rocking-end inclined central magnet portion 50B has the same length dimension in the Z direction as the length dimension of the central magnet portion 50 in the Z direction. The rocking-end inclined central magnet portion 50B has the same thickness dimension in the Y direction as the thickness dimension of the central magnet portion 50 in the Y direction. The rocking-end inclined central magnet portion 50B can have the same XY cross-sectional shape as the central magnet portion 50 over the entire length in the Z direction.

[0161] The rocking-end inclined central magnet portion 50B is fixed to the yoke 31 such that the surface facing the target 23 is inclined toward the other rocking end with respect to the magnetic pole plane 30. In order to attach the rocking-end inclined central magnet portion 50B, a concave groove may be formed in the yoke 31. Note that it is also possible to prevent the rocking-end inclined central magnet portion 50B from protruding toward the target 23 more than the magnetic pole plane 30. Alternatively, an end portion of the end face (magnetic pole face) of the rocking-end inclined central magnet portion 50B that is close to one rocking end may protrude toward the target 23 more than the magnetic pole plane 30. The rocking-end inclined central magnet portion 50B may be arranged in an inclined state in the same manner as the auxiliary magnet 27 described later.

[0162] The magnetic force density of the rocking-end inclined central magnet portion 50B as a magnetic material is substantially the same as that of the central magnet portion 50. That is, the rocking-end inclined central magnet portion 50B is formed using substantially the same magnet as the central magnet portion 50. Note that, as will be described later, the rocking-end inclined central magnet portion 50B is not limited to the above configuration as long as the magnetic field lines formed by the magnet 25 at one end are inclined toward the other rocking end in the X direction as compared with the case where the rocking-end inclined central magnet portion 50B is not provided. For example, the rocking-end inclined central magnet portion 50B may have a smaller volume than the central magnet portion 50 and a stronger magnetic force. Alternatively, the rocking-end inclined central magnet portion 50B may have a larger volume than the central magnet portion 50 and a weaker magnetic force.

[0163] FIG. 10 is a diagram for explaining the operation of the magnetic field line inclination mechanism, and is a schematic diagram showing the direction of magnetic field lines when the rocking-end inclined central magnet portion 50B is provided. Here, during sputtering, in the magnet 25 that becomes the rocking end within the rocking range, as shown in FIG. 10, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the rocking-end inclined central magnet portion 50B of the S pole. At this time, a magnetic circuit is formed by the rocking-end inclined central magnet portion 50B, the peripheral magnet portion 60, and the yoke 31. As a result, electrons are tracked along the magnetic field lines.

[0164] At this time, in the magnet 25 that becomes the rocking end, as shown in FIG. 10, due to the rocking-end inclined central magnet portion 50B that is inclined compared to the central magnet portion 50, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined so as not to go toward the anode 28. That is, the magnetic field lines that go from the peripheral magnet portion 60 of the N pole in the Y direction perpendicular to the magnetic pole plane 30 are inclined rightward in the X direction as compared with the case where the rocking-end inclined central magnet portion 50B is not provided. That is, in the magnet 25, by providing the rocking-end inclined central magnet portion 50B, the magnetic field lines formed at one rocking end can be pushed toward the other rocking end.

[0165] Then, on the surface 23a of the target 23, the magnetic flux density does not decrease. That is, in the magnet 25 that becomes the swing end, the electron density to be tracked is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, on the surface 23a of the target 23, the non-erosion regions formed at both ends in the X direction can be suppressed.

[0166] Also, in the magnet 25 that becomes the swing end, a magnetic circuit is formed by the swing end inclined central magnet portion 50B and the peripheral magnet portion 60, and magnetic flux lines are formed from the peripheral magnet portion 60 of the N pole to the swing end inclined central magnet portion 50B of the S pole. Thereby, the electrons orbiting around the swing end inclined central magnet portion 50B surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal end portions of the magnet 25. Therefore, at the Z-direction end of the magnet 25, the increase in the electron density is suppressed. That is, in the magnet 25 that becomes the swing end, the electrons that have moved in the Z direction along the swing end inclined central magnet portion 50B do not have their moving speed slowed down in the vicinity of bending in the X direction along the bridging portion 63. Also, in the vicinity of bending in the X direction along the bridging portion 63, the increase in the electron density is suppressed.

[0167] As a result, at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61 or the longitudinal straight portion 62, no decrease in the electron density occurs. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. That is, by providing the swing end inclined central magnet portion 50B in the two magnets 25 at both ends (swing ends) in the X direction, the formation of non-erosion regions at two diagonal locations can be suppressed. Thereby, in the target 23, the occurrence of voltage fluctuations can be suppressed. In the target 23, the formation of non-erosion regions at the X-direction ends can be suppressed. Therefore, in the target 23, it can be suppressed that other non-erosion regions are likely to be formed outside the ends in the X direction and the two diagonal locations.

[0168] According to the sputtering apparatus 1 in the present embodiment, by providing the swing-end inclined central magnet portion 50B as a magnetic field line inclination mechanism, in the magnet 25 at the swing end, it is possible to suppress the magnetic field lines formed by this magnet 25 from heading toward the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the direction in which the magnetic field lines formed by the magnet 25 head can be set as the Y direction, or can be inclined to the right direction in FIG. 10 rather than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where the non-erosion region is formed.

[0169] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of the non-erosion region. That is, the sputtering apparatus 1 can reduce the formation of the erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0170] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the generation of the non-erosion region. Thereby, the sputtering apparatus 1 can suppress the spike fluctuation of the discharge voltage and suppress the partial fluctuation of the plasma generation conditions due to voltage fluctuations and the like. Therefore, the sputtering apparatus 1 can suppress the generation of particles and the variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0171] In the present embodiment, in addition to the magnet 25 located at one swing end, the swing-end inclined central magnet portion 50B can also be provided as a magnetic field line inclination mechanism in the magnet located adjacent to it. Note that FIG. 10 illustrates a configuration in which the swing-end inclined central magnet portion 50B is provided in two adjacent magnets 25 starting from one swing end.

[0172] Hereinafter, a fourth embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 11 is an enlarged cross-sectional view showing an end portion of the magnet unit in the present embodiment. In the present embodiment, what is different from the above-described first to third embodiments is the point regarding the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those in the above-described first to third embodiments, and the description thereof will be omitted.

[0173] As shown in FIG. 11, in the magnet unit 21 in the present embodiment, among the swing regions, the magnet 25 located at one swing end is different from the adjacent magnet 25 and has an auxiliary magnet 27. The auxiliary magnet 27 constitutes a magnetic field line inclination mechanism.

[0174] The auxiliary magnet 27 is arranged at the outer edges of the swing end and the swing start end with respect to the magnet 25 at the end in the X direction, which is the swing direction. The auxiliary magnet 27 is formed in a straight line parallel to the longitudinal straight portion 61. The auxiliary magnet 27 has the same polarity as the closest longitudinal straight portion 61. That is, if the longitudinal straight portion 61 is the N pole, the auxiliary magnet 27 is the N pole of the same polarity. The auxiliary magnet 27 is provided only at a position closest to the longitudinal straight portion 61 of the magnet 25 located at the outermost periphery at both ends in the X direction. That is, the auxiliary magnet 27 is provided only at a position corresponding to the end of the target 23 in the X direction.

[0175] The auxiliary magnet 27 has the same length as the closest longitudinal straight portion 61. That is, the dimension of the auxiliary magnet 27 in the Z direction is substantially equal to the dimension of the magnet 25 located at the outermost periphery at both ends in the X direction in the Z direction. Here, the dimension of the auxiliary magnet 27 in the Z direction can be set to be plus or minus about 5 mm with respect to the dimension of the magnet 25 located at the outermost periphery at both ends in the X direction in the Z direction.

[0176] The auxiliary magnet 27 is a magnet with a rectangular cross-section, similar to the closest longitudinal straight portion 61. The auxiliary magnet 27 has the same cross-sectional shape over its entire length in the Z direction. The auxiliary magnet 27 is extremely close to the closest longitudinal straight portion 61 in the X direction. Specifically, as shown in FIG. 11, the auxiliary magnet 27 is either extremely close to and in contact with the closest longitudinal straight portion 61 in the X direction, or can be separated by a predetermined distance in the X direction as described later.

[0177] The auxiliary magnet 27 forms a ridge 27a with a continuous protrusion in the Z direction, where the convex portion protruding toward the target 23 is formed with respect to the ZX plane formed by the end face (magnetic pole plane) 30 of the peripheral magnet portion 60 of the magnet 25. The tip of the ridge 27a may protrude toward the target 23 more than the magnetic pole plane 30. The tip of the ridge 27a may be at the same position as the magnetic pole plane 30 in the Y direction. The tip of the ridge 27a may be separated from the target 23 more than the magnetic pole plane 30. Note that as the ridge 27a, in the auxiliary magnet 27 with a rectangular cross-section, it can also be formed convexly at the corner that becomes the corner of its magnetic pole face, or at a predetermined position in the width direction of the magnetic pole face.

[0178] The auxiliary magnet 27 is inclined with respect to the magnetic pole plane 30. That is, as shown in FIG. 11, the end face serving as the magnetic pole of the auxiliary magnet 27 may be inclined by an angle θ with respect to the ZX plane. Here, the angle θ is inclined so as to rotate in the X direction about the Z direction as the axis with respect to the Y direction, which is the normal of the surface 23a of the target 23. The angle θ is set to be positive in the direction in which the magnetic pole face of the auxiliary magnet 27 faces inside the swing range of the magnet unit 21, and can be in the range of 0 deg to 90 deg, more preferably in the range of 0 deg to 60 deg, further in the range of 0 deg to 45 deg, and in the range of 0 deg to 30 deg.

[0179] The magnetic strength of the auxiliary magnet 27 is equal to or less than the magnetic strength of the closest longitudinal straight portion 61. Specifically, the magnetic strength of the auxiliary magnet 27 can be in the range of 1 / 2 to 3 / 4, or 1 / 2 to 1 / 3 of the magnetic strength of the closest longitudinal straight portion 61. The magnetic strength of the closest longitudinal straight portion 61 can be 1 to 1.5 times, or 1.1 to 1.4 times, for example, about 1.39 times the magnetic strength of the auxiliary magnet 27.

[0180] As shown in FIG. 11, the auxiliary magnet 27 is fixed to the yoke 31 via the auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to the X-direction end of the yoke 31. The auxiliary yoke 31d can also be integrated with the yoke 31. In this case, the auxiliary yoke 31d is made of the same material as the yoke 31. The auxiliary yoke 31d is made of a magnetic material or a dielectric. The auxiliary yoke 31d can be formed of SUS430 or the like. The auxiliary magnet 27 is fixed to the auxiliary yoke 31d by a fixing member 27g so as to have a predetermined angle θ. The magnetic pole surface of the auxiliary magnet 27 on the side opposite to the target 23 is in contact with the auxiliary yoke 31d. As a result, the magnetism of the auxiliary magnet 27 and the auxiliary yoke 31d is also added to the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31.

[0181] FIG. 12 is a diagram for explaining the operation of the magnetic field line inclination mechanism, and is a schematic diagram showing the direction of magnetic field lines when the auxiliary magnet 27 is present. Here, during sputtering, at the swing end of the magnet unit 21 within the swing range, as shown in FIG. 12, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50 of the S pole. At this time, in addition to the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31, a magnetic circuit is formed including the auxiliary magnet 27 and the auxiliary yoke 31d. Thereby, electrons are tracked along the magnetic field lines.

[0182] At this time, in the magnet 25 that becomes the swing end, as shown in FIG. 12, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined by the auxiliary magnet 27 along the longitudinal straight portion 61 so as not to face the anode 28. That is, the magnetic field lines directed in the Y direction perpendicular to the magnetic pole plane 30 from the peripheral magnet portion 60 of the N pole are inclined to the right in the X direction as compared with the case where there is no auxiliary magnet 27. That is, in the magnet 25 that becomes the swing end, by providing the auxiliary magnet 27, the magnetic field lines formed at one swing end can be pushed toward the other swing end.

[0183] That is, in the magnet 25 that becomes the swing end, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined to the right in the X direction or in the Y direction perpendicular to the magnetic pole plane 30 so as not to face the anode 28 by the magnetic field lines from the auxiliary magnet 27. In the magnet 25 that becomes the swing end, the magnetic field lines formed by the auxiliary magnet 27, the longitudinal straight portion 61, and the central magnet portion 50 are inclined to the right in the X direction, but the magnetic field lines formed by the longitudinal straight portion 62 and the central magnet portion 50 can be regarded as being substantially the same as the case where there is no auxiliary magnet 27.

[0184] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 that becomes the swing end, the electron density to be tracked is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, on the surface 23a of the target 23, the non - erosion regions formed at both ends in the X direction can be suppressed.

[0185] In addition, a magnetic circuit is formed including a central magnet portion 50, a peripheral magnet portion 60, a yoke 31, an auxiliary magnet 27, and an auxiliary yoke 31d, and magnetic flux lines are formed from the N-pole peripheral magnet portion 60 toward the S-pole central magnet portion 50. As a result, electrons orbiting around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal end portions of the magnet 25. Therefore, at the longitudinal Z-direction end portions of the magnet 25, an increase in the electron density is suppressed. That is, in the magnet 25 serving as the swing end, the electrons that have moved in the Z direction along the central magnet portion 50 do not have their moving speed slowed down in the vicinity where they bend in the X direction along the bridging portion 63. Also, in the vicinity where the electrons bend in the X direction along the bridging portion 63, an increase in the electron density is suppressed.

[0186] As a result, at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61, or at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62, a decrease in density does not occur. As a result, the formation of non-erosion regions on the surface 23a of the target 23 in the two magnets 25 at both ends in the X direction is suppressed.

[0187] That is, by providing the auxiliary magnet 27 in the two magnets 25 at both ends (swing ends) in the X direction, the formation of non-erosion regions at two diagonal locations can be suppressed. As a result, in the target 23, the occurrence of voltage fluctuations can be suppressed. In the target 23, the formation of non-erosion regions at the end portions in the X direction can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to be formed other than the end portions in the X direction and the two diagonal locations.

[0188] According to the sputtering apparatus 1 in this embodiment, by providing the auxiliary magnet 27 as the magnetic field line inclination mechanism, in the magnet 25 at the swing end, the magnetic field lines formed by this magnet 25 can be made not to face the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the sputtering apparatus 1 can make the magnetic field lines formed by the magnet 25 in the Y direction or incline them to the right direction in FIG. 12 rather than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined by the auxiliary magnet 27 inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where the non-erosion region is formed.

[0189] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of the non-erosion region. That is, the sputtering apparatus 1 can reduce the formation of the erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0190] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the generation of the non-erosion region. Thereby, the sputtering apparatus 1 can suppress the spike variation of the discharge voltage and suppress the partial variation of the plasma generation conditions due to voltage variation or the like. Therefore, the sputtering apparatus 1 can suppress the generation of particles and the variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0191] Hereinafter, a fifth embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 13 is an enlarged cross-sectional view showing an end portion of the magnet unit and its vicinity in the present embodiment. In the present embodiment, the difference from the above-described first to fourth embodiments lies in the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those in the above-described first to fourth embodiments, and the description thereof is omitted.

[0192] As shown in FIG. 13, the sputtering apparatus 1 in the present embodiment has a swing-end outer magnet portion 35 on the back surface of the anode 28 located around the target 23. The swing-end outer magnet portion 35 constitutes a magnetic field line inclination mechanism. The swing-end outer magnet portion 35 is disposed outside the end portion in the X direction in the swing region. The swing-end outer magnet portion 35 extends in the Z direction along the contour of the swing region. The swing-end outer magnet portion 35 is disposed at the outer edges of the swing end and the swing start end with respect to the magnet 25 at the X direction end which is the swing direction. The swing-end outer magnet portion 35 is formed in a straight line parallel to the longitudinal straight portion 61.

[0193] The swing-end outer magnet portion 35 is disposed on the back surface of the anode 28, that is, on the surface of the anode 28 opposite to the glass substrate 11. The swing-end outer magnet portion 35 is disposed along the contour of the target 23. The Z-direction length of the swing-end outer magnet portion 35 is the same as the Z-direction length of the target 23. Alternatively, the Z-direction dimension of the swing-end outer magnet portion 35 may be substantially equal to the Z-direction dimensions of the magnets 25 located at both ends of the swing region in the X direction. The swing-end outer magnet portion 35 is in contact with the back surface of the anode 28.

[0194] The swing-end outer magnet portion 35 is a magnet having a rectangular cross-section, similar to the closest longitudinal straight portion 61. The end face of the swing-end outer magnet portion 35 facing the target 23 is a magnetic pole. The end face of the swing-end outer magnet portion 35 facing the inside of the swing region in the X direction is a magnetic pole. The end face of the swing-end outer magnet portion 35 facing the target 23 has the same magnetic pole as the closest longitudinal straight portion 61. That is, if the longitudinal straight portion 61 is the N pole, the swing-end outer magnet portion 35 is the N pole of the same magnetic pole.

[0195] The magnetic strength of the outer magnet portion 35 at the swing end is equal to or less than the magnetic strength of the closest longitudinal straight portion 61. The magnetic strength of the outer magnet portion 35 at the swing end can be in the range of 1 / 2 to 3 / 4, or 1 / 2 to 1 / 3 of the magnetic strength of the closest longitudinal straight portion 61.

[0196] A portion of the outer magnet portion 35 at the swing end that is not in contact with the anode 28 may be covered by a covering portion 35a. The covering portion 35a is not formed on the end face in the X direction that serves as a magnetic pole. The end face in the X direction that serves as a magnetic pole of the outer magnet portion 35 at the swing end is exposed. The magnetic pole face on the side opposite to the target 23 of the outer magnet portion 35 at the swing end is in contact with the covering portion 35a. When the outer magnet portion 35 at the swing end forms a magnetic circuit, the covering portion 35a acts as an S pole with respect to the longitudinal straight portion 61. That is, the covering portion 35a covers the end face of the outer magnet portion 35 at the swing end that is separated from the target 23 in the X direction, and also covers the surface of the outer magnet portion 35 at the swing end in the Z direction that is close to the longitudinal straight portion 61. The covering portion 35a is a magnetic material or a dielectric. The covering portion 35a may be made of the same material as the yoke 31. The covering portion 35a can be formed from SUS430 or the like.

[0197] When the outer magnet portion 35 at the swing end and the longitudinal straight portion 61 form a magnetic circuit, the covering portion 35a is formed so that magnetic flux lines do not enter the anode 28. As a result, the magnetism of the outer magnet portion 35 at the swing end and the covering portion 35a is also added to the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31. The surface of the covering portion 35a in the Z direction that is close to the longitudinal straight portion 61 is formed parallel to the surface 23a of the target 23. Note that the covering portion 35a is not limited to this shape as long as it is suitable for forming a magnetic circuit with the closest longitudinal straight portion 61.

[0198] FIG. 14 is a diagram for explaining the operation of the magnetic flux line inclination mechanism, and is a schematic diagram showing the direction of magnetic flux lines in the case where there is an outer magnet portion 35 at the swing end. Here, during sputtering, at the swing end of the swing range of the magnet unit 21, as shown in FIG. 14, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50 of the S pole. At this time, in addition to the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31, a magnetic circuit is formed including the outer magnet portion 35 at the swing end and the covering portion 35a. Thereby, electrons are tracked along the magnetic field lines.

[0199] At this time, in the magnet 25 at the swing end, as shown in FIG. 12, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined so as not to go toward the anode 28 by the outer magnet portion 35 at the swing end along the longitudinal straight portion 61. That is, the magnetic field lines extending from the peripheral magnet portion 60 of the N pole in the Y direction perpendicular to the magnetic pole plane 30 are inclined rightward in the X direction as compared with the case where there is no outer magnet portion 35 at the swing end. That is, in the magnet 25 at the swing end, by providing the outer magnet portion 35 at the swing end, the magnetic field lines formed at one swing end can be pushed toward the other swing end.

[0200] That is, in the magnet 25 at the swing end, the magnetic field lines from the peripheral magnet portion 60 of the N pole are inclined rightward in the Y direction perpendicular to the magnetic pole plane 30 or in the X direction so as not to go toward the anode 28 by the magnetic field lines from the outer magnet portion 35 at the swing end. In the magnet 25 at the swing end, the magnetic field lines formed by the outer magnet portion 35 at the swing end, the longitudinal straight portion 61, and the central magnet portion 50 are inclined rightward in the X direction, but the magnetic field lines formed by the longitudinal straight portion 62 and the central magnet portion 50 can be regarded as being substantially the same as in the case where there is no outer magnet portion 35 at the swing end.

[0201] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 at the swing end, the density of the tracked electrons is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, on the surface 23a of the target 23, the non - erosion regions formed at both ends in the X direction can be suppressed.

[0202] Further, a magnetic circuit is formed including the central magnet portion 50, the peripheral magnet portion 60, the yoke 31, the oscillating end outer magnet portion 35, and the covering portion 35a, and magnetic field lines are formed from the N - pole peripheral magnet portion 60 toward the S - pole central magnet portion 50. As a result, electrons orbiting around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal end portions of the magnet 25. Therefore, at the longitudinal Z - direction end portions of the magnet 25, an increase in the electron density is suppressed. That is, in the magnet 25 serving as the oscillating end, the electrons moving in the Z - direction along the central magnet portion 50 do not have their moving speed slowed down in the vicinity of bending along the bridging portion 63 in the X - direction. Also, in the vicinity of bending along the bridging portion 63 in the X - direction, an increase in the electron density is suppressed.

[0203] As a result, at the position where electrons bend from the X - direction to the Z - direction along the bridging portion 63 from the longitudinal straight portion 61, or at the position where electrons bend from the X - direction to the Z - direction along the bridging portion 63 from the longitudinal straight portion 62, a decrease in density does not occur. As a result, the formation of non - erosion regions on the surface 23a of the target 23 in the two magnets 25 at both ends in the X - direction is suppressed.

[0204] That is, by providing the oscillating end outer magnet portion 35 in the two magnets 25 at both ends (oscillating ends) in the X - direction, the formation of non - erosion regions at two diagonal positions can be suppressed. As a result, in the target 23, the generation of voltage fluctuations can be suppressed. In the target 23, the formation of non - erosion regions at the X - direction end portions can be suppressed. Therefore, in the target 23, it can be suppressed that other non - erosion regions are likely to be formed other than the end portions in the X - direction and the two diagonal positions.

[0205] According to the sputtering apparatus 1 in this embodiment, by providing the swing-end outer magnet portion 35 as the magnetic field line inclination mechanism, in the magnet 25 at the swing end, the magnetic field lines formed by this magnet 25 can be made not to face the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the sputtering apparatus 1 can make the magnetic field lines formed by the magnet 25 in the Y direction or incline them more to the right in FIG. 12 than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23 by the auxiliary magnet 27. Thereby, the sputtering apparatus 1 can reduce the total area where the non-erosion region is formed.

[0206] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of the non-erosion region. That is, the sputtering apparatus 1 can reduce the formation of the erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0207] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the generation of the non-erosion region. Thereby, the sputtering apparatus 1 can suppress the spike fluctuation of the discharge voltage and suppress the partial fluctuation of the plasma generation conditions due to voltage fluctuation or the like. Therefore, the sputtering apparatus 1 can suppress the generation of particles and the variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0208] Hereinafter, a sixth embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 15 is an enlarged cross-sectional view showing an end portion of the magnet unit in the present embodiment. In the present embodiment, what is different from the above-described first to fifth embodiments is the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those of the above-described first to fifth embodiments, and the description thereof is omitted.

[0209] As shown in FIG. 15, in the magnet unit 21 in the present embodiment, among the swing regions, the magnet 25 located at one swing end has a swing end magnetic body portion 50C on the side surface in the X direction of the central magnet portion 50, different from the central magnet portion 50 of the adjacent magnet 25. The swing end magnetic body portion 50C constitutes a magnetic field line inclination mechanism. The swing end magnetic body portion 50C can be formed of the same material as the yoke 31. The swing end magnetic body portion 50C can be formed of SUS430 or the like.

[0210] Note that the central magnet portion 50 in contact with the swing end magnetic body portion 50C can be formed to have the same size as the central magnet portion 50 of the adjacent magnet 25. Alternatively, the central magnet portion 50 in contact with the swing end magnetic body portion 50C may be formed smaller than the central magnet portion 50 of the adjacent magnet 25. In other words, it is also possible to connect the swing end magnetic body portion 50C to the swing end central magnet portion 50A.

[0211] The magnet 25 located at one swing end has a central magnet portion 50 disposed at substantially the same position with respect to the yoke 31, similar to the central magnet portion 50 of the adjacent magnet 25. The swing end magnetic body portion 50C is connected to the end surface in the X direction facing the peripheral magnet portion 60 in the central magnet portion 50. The swing end magnetic body portion 50C covers all of the end surface in the X direction of the central magnet portion 50. The swing end magnetic body portion 50C is formed along the entire length in the Z direction of the central magnet portion 50. The swing end magnetic body portion 50C does not cover the end surface (magnetic pole plane) 30 of the central magnet portion 50.

[0212] The swing-end magnetic body part 50C is connected to the end face in the X direction facing the longitudinal straight part 61 in the central magnet part 50. Further, the swing-end magnetic body part 50C may be connected to the end face in the X direction facing the longitudinal straight part 62 in the central magnet part 50. FIG. 15 shows a configuration in which the swing-end magnetic body parts 50C are arranged on both sides in the X direction of the central magnet part 50. Note that the swing-end magnetic body part 50C may be arranged only on one side in the X direction of the central magnet part 50. In this case, the swing-end magnetic body part 50C is preferably arranged on the end face in the X direction facing the longitudinal straight part 61 in the central magnet part 50.

[0213] The swing-end magnetic body part 50C has a Z-direction dimension substantially equal to the Z-direction dimension of the central magnet part 50. The swing-end magnetic body part 50C is formed from the end face (magnetic pole plane) 30 of the central magnet part 50 to the yoke 31 in the Y direction. The swing-end magnetic body part 50C has substantially equal X-direction dimensions over the entire length in the Z direction. The swing-end magnetic body part 50C has substantially equal X-direction dimensions over the entire length in the Y direction. The swing-end magnetic body part 50C has an X-direction separation distance substantially equal to that of the peripheral magnet part 60 over the entire length in the Z direction. The X-direction dimension of the swing-end magnetic body part 50C is smaller than the X-direction dimension of the central magnet part 50.

[0214] FIG. 16 is a diagram for explaining the operation of the magnetic field line inclination mechanism, and is a schematic diagram showing the direction of magnetic field lines when the swing-end magnetic body part 50C is present. Here, during sputtering, in the magnet 25 that becomes the swing end in the swing range, as shown in FIG. 8, magnetic field lines are formed from the peripheral magnet part 60 of the N pole to the central magnet part 50 of the S pole. At this time, a magnetic circuit is formed by the longitudinal straight part 61, the longitudinal straight part 62, the bridging part 63, the central magnet part 50, the yoke 31, and the swing-end magnetic body part 50C. Thereby, electrons are tracked along the magnetic field lines.

[0215] At this time, in the magnet 25 that becomes the swing end, as shown in Fig. 16, since the swing end magnetic body part 50C is connected to the central magnet part 50, the magnetic field lines from the peripheral magnet part 60 of the N pole are inclined so as not to face the anode 28. That is, the magnetic field lines that go in the Y direction perpendicular to the magnetic pole plane 30 from the peripheral magnet part 60 of the N pole are inclined to the right in the X direction compared to the case where there is no swing end magnetic body part 50C. That is, in the magnet 25, by providing the swing end magnetic body part 50C, similar to the case where the swing end central magnet part 50A is provided, the magnetic field lines formed at one swing end can be pushed toward the other swing end.

[0216] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 that becomes the swing end, the electron density to be tracked is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, on the surface 23a of the target 23, the non - erosion regions formed at both ends in the X direction can be suppressed.

[0217] Also, in the magnet 25 that becomes the swing end, a magnetic circuit is formed by the longitudinal straight part 61, the longitudinal straight part 62, the bridging part 63, and the central magnet part 50, and magnetic field lines are formed from the peripheral magnet part 60 of the N pole to the swing end central magnet part 50A of the S pole. Thereby, the electrons that circulate around the central magnet part 50 surrounded by the peripheral magnet part 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal end of the magnet 25. Therefore, at the longitudinal Z - direction end of the magnet 25, the increase in the electron density is suppressed. That is, in the magnet 25 that becomes the swing end, the electrons that have moved in the Z direction along the central magnet part 50 do not have their moving speed slowed down in the vicinity of bending along the bridging part 63 in the X direction. Also, in the vicinity of bending along the bridging part 63 in the X direction, the increase in the electron density is suppressed.

[0218] As a result, in the magnet 25 serving as the swing end, at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61, or at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62, a decrease in electron density does not occur. As a result, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed by the two magnets 25 at both ends in the X direction. That is, by providing the swing end magnetic body portion 50C on the two magnets 25 that are the swing ends at both ends in the X direction, the formation of non-erosion regions at two diagonal locations can be suppressed. Thereby, in the target 23, the occurrence of voltage fluctuations can be suppressed. In the target 23, the formation of non-erosion regions at the end portions in the X direction can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to be formed outside the end portions in the X direction and the two diagonal locations.

[0219] According to the sputtering apparatus 1 in the present embodiment, by providing the swing end magnetic body portion 50C as a magnetic field line inclination mechanism, the swing end magnetic body portion 50C can be formed so that the magnetic field lines formed between the central magnet portion 50 and the peripheral magnet portion 60 do not spread outside the swing region in the X direction with respect to the magnet 25 at the position in contact with one swing end. That is, the sputtering apparatus 1 can prevent the magnetic field lines formed by the magnet 25 from facing the anode 28 at the magnet 25 at the swing end. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the sputtering apparatus 1 can set the magnetic field lines formed by the magnet 25 in the Y direction or incline them more to the right in FIG. 8 than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where non-erosion regions are formed.

[0220] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of non-erosion regions. That is, the sputtering apparatus 1 can reduce the formation of an erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0221] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the generation of non-erosion regions. As a result, the sputtering apparatus 1 can suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations and the like. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0222] Hereinafter, a seventh embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 17 is an enlarged cross-sectional view showing an end portion of the magnet unit in the present embodiment. In the present embodiment, what is different from the above-described first to sixth embodiments is the point regarding the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those in the above-described first to sixth embodiments, and the description thereof will be omitted.

[0223] As shown in FIG. 17, the magnet unit scanning unit 29 in the present embodiment includes a magnet inclination scanning unit 29A that inclines the magnet 25 closest to one swing end when the magnet unit 21 is located at one swing end of the swing region. The magnet inclination scanning unit 29A constitutes a magnetic field line inclination mechanism.

[0224] When the magnet unit 21 is located at one swing end of the swing region in the X direction, the magnet inclination scanning unit 29A inclines the magnetic pole plane 30A of the magnet 25 closest to the one swing end so as to incline from the magnetic pole plane 30 toward the other swing end. That is, when the magnet unit scanning unit 29 moves the magnet unit 21 in the X direction, the magnet inclination scanning unit 29A can incline only the magnet 25 closest to the one swing end.

[0225] When the magnet 25 closest to the one swing end moves in a direction approaching the one swing end, the magnet inclination scanning unit 29A inclines the magnetic pole plane 30A of this magnet 25 so as to incline from the magnetic pole plane 30 toward the other swing end. When the magnet 25 closest to the one swing end moves in a direction approaching the one swing end, the magnet inclination scanning unit 29A inclines the central axis 25ZA of the magnet 25 in the normal direction of the yoke 31 toward the target 23 so as to incline toward the other swing end.

[0226] Also, when the magnet 25 closest to the one swing end moves in a direction away from the one swing end, the magnet inclination scanning unit 29A returns the inclination so that the magnetic pole plane 30A of this magnet 25 is flush with the magnetic pole plane 30. When the magnet 25 closest to the one swing end moves in a direction away from the one swing end, the magnet inclination scanning unit 29A returns the inclination so that the central axis 25ZA of the magnet 25 in the normal direction of the yoke 31 toward the target 23, the direction toward the target 23, coincides with the normal of the target 23 and the normal of the magnetic pole plane 30.

[0227] Therefore, when the magnet 25 closest to one rocking end moves from a position spaced apart from the one rocking end to a direction further spaced apart from the one rocking end, the magnet 25 closest to the one rocking end moves only in the X direction in a posture maintaining the relative positional relationship with the adjacent magnet 25 by the magnet unit scanning unit 29. When the magnet 25 closest to one rocking end moves from a position spaced apart from the one rocking end to a direction further spaced apart from the one rocking end, the central axis 25ZA directed toward the target 23 in the normal direction of the yoke 31 of the magnet 25 closest to the one rocking end maintains a state parallel to the central axis 25Z directed toward the target 23 in the normal direction of the yoke 31 of the adjacent magnet 25.

[0228] The magnet tilt scanning unit 29A is configured to add a tilting function to the magnet unit scanning unit 29 that moves the magnet unit 21 in the X direction. In addition to the configuration of the magnet unit scanning unit 29, the magnet tilt scanning unit 29A can include a rotation axis in the Z direction for tilting the magnet 25 close to one rocking end and a tilt driving unit for tilting the magnet 25 close to one rocking end around this rotation axis. Here, the magnet tilt scanning unit 29A does not change the relative positions of the plurality of magnets 25 in the magnet unit 21 in the X direction.

[0229] Note that when the magnet unit 21 is located at the other rocking end in the rocking region in the X direction, the magnet tilt scanning unit 29A tilts the magnetic pole plane 30A of the magnet 25 closest to the other rocking end so as to tilt from the magnetic pole plane 30 toward the one rocking end.

[0230] FIG. 18 is a diagram for explaining the operation of the magnetic force line tilting mechanism, and is a schematic diagram showing the direction of the magnetic force lines when the magnet tilt scanning unit 29A tilts the magnet 25 closest to one rocking end. Here, during sputtering, in the magnet 25 closest to one of the swing ends, regardless of the X-direction position within the swing range, as shown in FIG. 18, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50 of the S pole. At this time, a magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31. In the magnet 25 closest to one of the swing ends, when it is located at one of the swing ends within the swing range, as shown in FIG. 18, the magnet 25 itself is tilted by the magnet tilt scanning unit 29A. At this time, the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31 is maintained. Thereby, electrons are tracked along the magnetic field lines.

[0231] At this time, in the magnet 25 that becomes one of the swing ends, as shown in FIG. 18, when the magnet 25 itself is tilted by the magnet tilt scanning unit 29A, the magnetic field lines formed by the magnet 25 are tilted so as not to face the anode 28. That is, since the central axis line 25ZA from the magnet 25 toward the target 23 is tilted to the right, the magnetic field lines from the peripheral magnet portion 60 of the N pole toward the direction perpendicular to the magnetic pole plane 30A are tilted to the right in the X direction. That is, in the magnet unit 21, by providing the magnet tilt scanning unit 29A, at one of the swing ends, the magnetic field lines formed by the magnet 25 closest to one of the swing ends can be tilted toward the other swing end. It is possible to suppress the magnetic field lines formed by the magnet 25 from being attracted to the anode 28.

[0232] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 that becomes one of the swing ends, the density of the tracked electrons is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, it is possible to suppress the non-erosion regions formed at both ends in the X direction on the surface 23a of the target 23.

[0233] Also, in the magnet 25 that serves as the swing end, similar to the adjacent magnets 25, a magnetic circuit is formed by the central magnet portion 50 and the peripheral magnet portion 60, and magnetic field lines are formed from the N - pole peripheral magnet portion 60 toward the S - pole swing - end inclined central magnet portion 50B. As a result, electrons orbiting around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal - direction end of the magnet 25. Therefore, at the Z - direction end of the magnet 25, an increase in the electron density is suppressed. That is, in the magnet 25 that serves as the swing end, the electrons that have moved in the Z direction along the central magnet portion 50 do not have their moving speed slowed down in the vicinity of bending along the bridging portion 63 in the X direction. Also, in the vicinity of bending along the bridging portion 63 in the X direction, an increase in the electron density is suppressed.

[0234] As a result, at the position where electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61 or the longitudinal straight portion 62, a decrease in the electron density does not occur. As a result, in the two magnets 25 that are at both ends in the X direction, the formation of non - erosion regions on the surface 23a of the target 23 can be suppressed. That is, by inclining the two magnets 25 that are at both ends (swing ends) in the X direction at the positions that serve as swing ends by the magnet inclination scanning unit 29A, the formation of non - erosion regions at two diagonal locations can be suppressed. Thereby, in the target 23, the generation of voltage fluctuations can be suppressed. In the target 23, the formation of non - erosion regions at the X - direction ends can be suppressed. Therefore, in the target 23, it can be suppressed that other non - erosion regions are likely to be formed outside the X - direction ends and the two diagonal locations.

[0235] According to the sputtering apparatus 1 in this embodiment, by providing the magnet tilt scanning unit 29A as the magnetic field line inclination mechanism, it is possible to suppress the magnetic field lines formed by the magnet 25 at the swing end from facing the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the direction in which the magnetic field lines formed by the magnet 25 face can be set as the Y direction, or can be inclined to the right direction in FIG. 18 rather than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where the non-erosion region is formed.

[0236] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of the non-erosion region. That is, the sputtering apparatus 1 can reduce the formation of the erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0237] Furthermore, the sputtering apparatus 1 can prevent the supply power from being redistributed by suppressing the generation of the non-erosion region. Thereby, the sputtering apparatus 1 can suppress the spike variation of the discharge voltage and suppress the partial variation of the plasma generation conditions due to voltage variation or the like. Therefore, the sputtering apparatus 1 can suppress the generation of particles and the variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

[0238] Hereinafter, an eighth embodiment of the sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 19 is an enlarged cross-sectional view showing an end portion of the magnet unit in this embodiment. In this embodiment, the difference from the above-described first to seventh embodiments lies in the magnetic field line inclination mechanism, and the same reference numerals are given to the corresponding configurations as those in the above-described first to seventh embodiments, and the description thereof is omitted.

[0239] As shown in FIG. 17, the magnet unit scanning unit 29 in this embodiment has a magnet proximity scanning unit 29B that brings the magnet 25 closest to one of the swinging ends closer to the target when the magnet unit 21 is located at one of the swinging ends in the swinging region. The magnet proximity scanning unit 29B constitutes a magnetic field line inclination mechanism.

[0240] When the magnet unit 21 is located at one of the swinging ends in the swinging region in the X direction, the magnet proximity scanning unit 29B moves the magnet 25 closest to one of the swinging ends closer to the target 23 from the magnetic pole plane 30 of the magnet 25 adjacent to the magnetic pole plane 30B. At this time, the magnet proximity scanning unit 29B does not incline the magnetic pole plane 30B of the magnet 25 closest to one of the swinging ends. That is, when the magnet unit scanning unit 29 moves the magnet unit 21 in the X direction, the magnet proximity scanning unit 29B can move only the magnet 25 closest to one of the swinging ends in the Y direction.

[0241] When the magnet 25 closest to one of the swinging ends moves in the X direction closer to one of the swinging ends, the magnet proximity scanning unit 29B brings the magnet 25 closer to the target 23 in the Z direction while maintaining the magnetic pole plane 30B of this magnet 25 parallel to the magnetic pole plane 30. When the magnet 25 closest to one of the swinging ends moves in the X direction closer to one of the swinging ends, the magnet proximity scanning unit 29B brings the magnet 25 closer to the target 23 in the Z direction while maintaining the central axis 25ZB of the magnet 25 in the normal direction of the yoke 31 of this magnet 25 and directed toward the target 23 parallel to the central axis 25Z of the adjacent magnet 25.

[0242] In addition, when the magnet 25 closest to one rocking end moves in the X direction away from the one rocking end, the magnet proximity scanning unit 29B moves the magnet 25 away from the target 23 in the Z direction and returns it to its original position while maintaining the magnetic pole plane 30B of the magnet 25 parallel to the magnetic pole plane 30. When the magnet 25 closest to one rocking end moves in the direction away from the one rocking end, the magnet proximity scanning unit 29B moves the magnet 25 away from the target 23 in the Z direction and returns it to its original position while maintaining the central axis 25ZA of the magnet 25 facing the target 23 in the normal direction of the yoke 31 of the magnet 25 parallel to the central axis 25Z of the adjacent magnet 25.

[0243] Therefore, when the magnet 25 closest to one rocking end moves from a position away from the one rocking end to a direction further away from the one rocking end, the magnet 25 closest to the one rocking end moves only in the X direction in a posture maintaining the relative positional relationship with the adjacent magnet 25 by the magnet unit scanning unit 29. When the magnet 25 closest to one rocking end moves from a position away from the one rocking end to a direction further away from the one rocking end, the central axis 25ZB of the magnet 25 closest to the one rocking end maintains a state parallel to the central axis 25Z of the adjacent magnet 25.

[0244] The magnet proximity scanning unit 29B is configured to have an additional function of moving in the Y direction with respect to the magnet unit scanning unit 29 that moves the magnet unit 21 in the X direction. In addition to the configuration of the magnet unit scanning unit 29, the magnet proximity scanning unit 29B is configured to move the magnet 25 closest to one rocking end in the Y direction. For example, it can have a rail extending along the Y direction, rollers attached to each of the two ZX-direction ends of the magnet 25 closest to one rocking end, and a plurality of motors for rotating each of the rollers. The magnet proximity scanning unit 29B may be composed of an LM guide or the like having a rail extending along the Y direction. Here, the magnet proximity scanning unit 29B does not change the relative positions of the plurality of magnets 25 in the magnet unit 21 in the X direction.

[0245] Note that when the magnet unit 21 is located at the other swing end in the swing region in the X direction, the magnet proximity scanning unit 29B brings the magnetic pole plane 30B of the magnet 25 closest to the other swing end closer to and away from the target 23 in the Z direction while maintaining the magnetic pole plane 30 in a parallel state.

[0246] FIG. 20 is a diagram for explaining the operation of the magnetic field line inclination mechanism, and is a schematic diagram showing the direction of magnetic field lines when the magnet proximity scanning unit 29B brings the magnet 25 closest to one swing end closer to the target 23. Here, during sputtering, in the magnet 25 closest to one swing end, regardless of the X-direction position in the swing range, as shown in FIG. 20, magnetic field lines are formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50 of the S pole. At this time, a magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31. In the magnet 25 closest to one swing end, when it is located at one swing end in the swing range, as shown in FIG. 20, the magnet 25 itself moves in the Y direction by the magnet proximity scanning unit 29B. At this time, the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31 is maintained. Thereby, electrons are tracked along the magnetic field lines.

[0247] At this time, in the magnet 25 serving as one of the swinging ends, as shown in FIG. 20, when the magnet 25 is moved in the Y direction by the magnet proximity scanning unit 29B, the magnetic field lines formed by the magnet 25 are shifted so as not to face the anode 28. That is, when the magnetic pole plane 30B of the magnet 25 approaches the target 23, the magnetic field lines extending from the peripheral magnet portion 60 of the N pole in a direction intersecting the magnetic pole plane 30B can have a reduced inclination in the X direction. That is, in the magnet unit 21, by providing the magnet proximity scanning unit 29B, it can be considered that, at one of the swinging ends, the magnetic field lines formed by the magnet 25 closest to one of the swinging ends are inclined toward the other swinging end. It is possible to suppress the magnetic field lines formed by the magnet 25 from being attracted to the anode 28.

[0248] Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, in the magnet 25 serving as one of the swinging ends, the electron density to be tracked is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, on the surface 23a of the target 23, it is possible to suppress the non-erosion regions formed at both ends in the X direction.

[0249] Also, in the magnet 25 serving as the swinging end, similar to the adjacent magnets 25, a magnetic circuit is formed by the central magnet portion 50 and the peripheral magnet portion 60, and magnetic field lines extending from the peripheral magnet portion 60 of the N pole to the swinging end inclined central magnet portion 50B of the S pole are formed. Thereby, electrons circulating around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not have their moving speed slowed down at the longitudinal ends of the magnet 25. Therefore, at the Z-direction end of the magnet 25, an increase in the electron density is suppressed. That is, in the magnet 25 serving as the swinging end, the electrons that have moved in the Z direction along the central magnet portion 50 do not have their moving speed slowed down in the vicinity of bending along the bridging portion 63 in the X direction. Also, in the vicinity of bending along the bridging portion 63 in the X direction, an increase in the electron density is suppressed.

[0250] As a result, at the position where electrons bend from the longitudinal straight portion 61 or the longitudinal straight portion 62 along the bridging portion 63 from the X direction to the Z direction, no decrease in electron density occurs. As a result, in the two magnets 25 at both ends in the X direction, the formation of a non-erosion region on the surface 23a of the target 23 can be suppressed. That is, by bringing the two magnets 25 at both ends (oscillation ends) in the X direction close to the target 23 at the positions where they become the oscillation ends by the magnet proximity scanning unit 29B, the formation of non-erosion regions at two diagonal positions can be suppressed. Thereby, in the target 23, the occurrence of voltage fluctuations can be suppressed. In the target 23, the formation of a non-erosion region at the end in the X direction can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to be formed other than the ends in the X direction and the two diagonal positions.

[0251] According to the sputtering apparatus 1 in the present embodiment, by providing the magnet proximity scanning unit 29B as a magnetic field line inclination mechanism, in the magnet 25 at the oscillation end, it is possible to suppress the magnetic field lines formed by this magnet 25 from facing the anode 28. Thereby, the sputtering apparatus 1 can reduce the electrons attracted to the anode 28. That is, the direction in which the magnetic field lines formed by the magnet 25 face can be set as the Y direction, or can be inclined to the right direction in FIG. 20 more than the Y direction. That is, the magnetic field lines formed by the magnet 25 can be inclined inward of the contour of the target 23 rather than in the thickness direction of the target 23. Thereby, the sputtering apparatus 1 can reduce the total area where the non-erosion region is formed.

[0252] That is, the sputtering apparatus 1 can suppress the generation of particles by reducing the occurrence of the non-erosion region. That is, the sputtering apparatus 1 can reduce the formation of an erosion-non-erosion boundary region that causes particle generation due to the boundary between the non-erosion region and the erosion region becoming unclear.

[0253] Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supply power by suppressing the generation of non-erosion regions. As a result, the sputtering apparatus 1 can suppress the spike fluctuations of the discharge voltage and suppress the partial fluctuations of the plasma generation conditions due to voltage fluctuations and the like. Therefore, the sputtering apparatus 1 can suppress the generation of particles and the variations in film quality characteristics distributions such as film thickness distribution and sheet resistance value distribution.

Description of Signs

[0254] 1…Sputtering apparatus 4…Film formation chamber (chamber) 10…Cathode device 11…Glass substrate (substrate to be coated, transparent substrate) 22…Cathode unit 23…Target 24…Backing plate 25…Magnet (magnetic circuit) 26…Control unit 27…Auxiliary magnet 28…Anode 29…Magnet unit scanning unit 29A…Magnet inclination scanning unit 29B…Magnet proximity scanning unit 30, 30A…Magnetic pole plane 31…Yoke 35…Oscillation end outer magnet part 35a…Coating part 41…Front space 42…Rear space 50…Central magnet part 50A…Oscillation end central magnet part 50B…Oscillation end inclined central magnet part 50C…Oscillation end magnetic body part 61, 62…Longitudinal straight part 60…Peripheral magnet part 60A…Oscillation end longitudinal straight part 63…Bridge part

Claims

1. A cathode unit that emits sputter particles toward the formation region of the substrate to be film-formed, a target in which an erosion region is formed, a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target, a magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be film-formed, having, the magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, the magnet has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at one swing end toward the other swing end, the magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at one swing end toward the other swing end, the magnet, a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, comprising, the magnet unit has a plurality of the magnets arranged side by side in the swing direction, the magnetic field line inclination mechanism has a swing end central magnet portion formed smaller than the central magnet portion of the adjacent magnet in the magnet located at one swing end. A sputtering apparatus characterized by this.

2. A cathode unit that emits sputter particles toward the formation region of the substrate to be film-formed, a target in which an erosion region is formed, a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target, a magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be film-formed, having, the magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, It has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swinging end toward the other swinging end. The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at the one swinging end toward the other swinging end, The magnet has a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that has a magnetic pole facing the target and has a different polarity from the central magnet portion, extends parallel to both sides of the central magnet portion at equal intervals, and has bridging portions that bridge the ends of both the longitudinal straight portions, and surrounds the periphery of the central magnet portion along the target surface, and is provided with The magnet unit has a plurality of the magnets arranged side by side in the swinging direction, The magnetic field line inclination mechanism has a swinging end longitudinal straight portion formed larger than the longitudinal straight portion of the adjacent magnet in the magnet located at the one swinging end. The sputtering apparatus is characterized by this.

3. A cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed has a target in which an erosion region is formed, a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region in the target, and a magnet unit scanning unit that can reciprocate in a swinging region defined between one swinging end and the other swinging end in a swinging direction (scanning direction) along the target surface between the magnet unit and the substrate to be film-formed, and has The magnet unit has a magnet whose longitudinal direction extends in a swinging width direction that intersects the swinging direction along the target surface, It has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swinging end toward the other swinging end, The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at the one swinging end toward the other swinging end, The magnet has a central magnet portion that is linearly arranged and is a magnetic pole facing the target, and a peripheral magnet portion that has a magnetic pole facing the target and has a different polarity from the central magnet portion and surrounds the periphery of the central magnet portion along the target surface, and is provided with The magnet unit has a plurality of the magnets arranged side by side in the swinging direction, The magnetic field line inclination mechanism has a swing end inclined central magnet portion that is inclined toward the other swing end from the central magnet portion of the adjacent magnet in the magnet located at the one swing end. A sputtering apparatus characterized by this.

4. A cathode unit that emits sputter particles toward the formation region of the substrate to be film-formed, A target in which a non-erosion region and an erosion region are formed, A magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the non-erosion region and the erosion region on the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface between the magnet unit and the substrate to be film-formed, having, The magnet unit has a magnet whose longitudinal direction extends in a swing width direction that intersects the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion-non-erosion boundary region where the boundary between the non-erosion region and the erosion region is unclear, The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnet is a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, and includes, The magnet unit has a plurality of the magnets arranged side by side in the swing direction, The magnetic field line inclination mechanism has an auxiliary magnet disposed adjacent to the peripheral magnet portion at a position outside the swing region from the one swing end. A sputtering apparatus characterized by this.

5. A cathode unit that emits sputter particles toward the formation region of the substrate to be film-formed, A target in which a non-erosion region and an erosion region are formed, A magnet unit that is disposed on the side opposite to the film-forming substrate with respect to the target and forms the non-erosion region and the erosion region on the target, A magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the film-forming substrate, having, The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion-non-erosion boundary region where the boundary between the non-erosion region and the erosion region is unclear, The magnetic field line inclination mechanism pushes the magnetic field lines formed by the magnet at the one swing end toward the other swing end, has a cathode unit and an anode located around the target, The magnetic field line inclination mechanism has a swing end outer magnet portion located outside the swing region than the one swing end on the back surface of the anode, A sputtering apparatus characterized by this.

6. A cathode unit that emits sputtering particles toward the formation region of the film-forming substrate, a target in which a non-erosion region and an erosion region are formed, a magnet unit that is disposed on the side opposite to the film-forming substrate with respect to the target and forms the non-erosion region and the erosion region on the target, a magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the film-forming substrate, having, The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, and has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion-non-erosion boundary region where the boundary between the non-erosion region and the erosion region is unclear, and the magnetic field line inclination mechanism changes the magnetic field lines formed by the magnet at the one swing end so that the width of the magnetic field lines spreading in the swing direction decreases, which is a sputtering apparatus characterized by the above.

7. A cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed, a target in which an erosion region is formed, a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region on the target, a magnet unit scanning unit that can reciprocate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface between the magnet unit and the substrate to be film-formed, has, the magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, the magnet has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, the magnetic field line inclination mechanism changes the magnetic field lines formed by the magnet at the one swing end so that the width of the magnetic field lines spreading in the swing direction decreases, the magnet, a central magnet portion that is linearly arranged and is a magnetic pole facing the target, a peripheral magnet portion that is a magnetic pole facing the target, has a polarity different from that of the central magnet portion, and surrounds the periphery of the central magnet portion along the target surface, is provided with, the magnet unit has a plurality of the magnets arranged side by side in the swing direction, the magnetic field line inclination mechanism has a swing end magnetic body portion disposed adjacent to the central magnet portion in the swing direction in the magnet located at the one swing end, which is a sputtering apparatus characterized by the above.

8. A cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed, a target in which a non-erosion region and an erosion region are formed, a magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the non-erosion region and the erosion region on the target, A magnet unit scanning section capable of reciprocating in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be film-formed. It has The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, The magnet has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, The magnetic field line inclination mechanism suppresses the formation of an erosion-non-erosion boundary region where the boundary between the non-erosion region and the erosion region is unclear, The magnetic field line inclination mechanism has a magnet inclination scanning section that inclines the magnet at the one swing end so that the magnetic field lines formed by the magnet at the one swing end incline toward the other swing end, A sputtering apparatus characterized by this.

9. A cathode unit that emits sputtering particles toward the formation region of the substrate to be film-formed has A target where an erosion region is formed, A magnet unit that is disposed on the side opposite to the substrate to be film-formed with respect to the target and forms the erosion region on the target, A magnet unit scanning section capable of reciprocating in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface with respect to the magnet unit and the substrate to be film-formed, It has The magnet unit has a magnet whose longitudinal direction extends in a swing width direction intersecting the swing direction along the target surface, The magnet has a magnetic field line inclination mechanism that inclines the magnetic field lines formed by the magnet at the one swing end toward the other swing end, It has an anode located around the target, paired with the cathode unit, The magnetic field line inclination mechanism has a magnet proximity scanning section that brings the magnet closer to the target at the magnet located at the one swing end so as to reduce the magnetic field lines formed in the magnet and reaching the anode, A sputtering apparatus characterized by this.

Images