Method for forming a nanostructure and a field effect transistor element on a substrate

Abstract

A method for forming a nanostructure array and a field-effect transistor device on a substrate is provided, the method for forming the nanostructure array comprising the steps of: providing a template solution containing template nanostructures; depositing at least one template nanostructure on the substrate by contacting the template solution with the substrate; and forming at least one anchoring structure on the substrate, each intersecting all or a portion of the at least one template nanostructure, to anchor all or a portion of the at least one template nanostructure to the substrate.

Description

Technical Field

[0001] Cross - reference to related applications

[0001] This application claims priority to PCT Application No. PCT / CN2020 / 082375 filed on March 31, 2020, PCT Application No. PCT / CN2020 / 082377 filed on March 31, 2020, PCT Application No. PCT / CN2020 / 082778 filed on April 1, 2020, and PCT Application No. PCT / CN2020 / 082777 filed on April 1, 2020, the entire contents of which are incorporated herein by reference.

[0002]

[0002] This application generally relates to nanomanufacturing technology, and more particularly to a method of forming nanostructures and field - effect transistor elements on a substrate.

Background Art

[0003]

[0003] In a devised high - performance and energy - efficient field - effect transistor (FET), a semiconductor channel with an equal - pitch small pitch (the distance between two adjacent channels within an individual FET) is preferred. For example, for lithographically defined Fin - FETs after the 5nm technology node, a homogeneous 24nm fin pitch has been proposed. A smaller channel pitch brings higher integration density and on - state performance, but with an increased risk of destructive short - range shielding and electrostatic interactions. On the other hand, an equal - pitch alignment minimizes channel disorders that affect the switching between the on - state and the off - state.

[0004]

[0004] Conventional lithography can beautifully reduce the channel pitch of bulk materials (e.g., silicon substrates), but the performance of patterning one-dimensional (1D) semiconductors at technology nodes below 5 nm deteriorates. The devised channel pitch (about 10 nm or less) for carbon nanotubes (CNTs) exceeds the current manufacturing limit of lithography (greater than 10 nm). Alternatively, a thin-film approach that uses physical forces or chemical recognition to assemble CNTs yields a density exceeding 500 CNTs / μm and an on-state performance equivalent to that of silicon-based FETs. However, the accompanying assembly disorders, including intersecting pitches, bundled pitches, and irregular pitches, inevitably reduce gate modulation and exhibit a large subthreshold swing of up to 500 mV / dec and a reduced on / off ratio.

[0005]

[0005] Therefore, further improvement of conventional nanomanufacturing techniques is needed.

SUMMARY OF THE INVENTION

[0006]

[0006] An object of the present application is to provide a method for forming a nanostructure array on a substrate and a method for forming a field-effect transistor (FET) array on a substrate.

[0007] In one aspect of the present application, a method for forming a nanostructure array on a substrate is provided. The method can include the steps of preparing a template solution containing template nanostructures; depositing at least one type of template nanostructure on the substrate by bringing the template solution into contact with the substrate; and forming at least one type of fixed structure on the substrate that intersects all or part of at least one type of template nanostructure to fix all or part of at least one type of template nanostructure to the substrate.

[0007]

[0008] In some embodiments, the template nanostructure comprises one or more substances selected from the group consisting of nucleic acid templates, modified nucleic acid templates, protein templates, polymer templates, carbon nanotubes (CNTs), polymer-coated CNTs, CNT membranes, semiconductor nanoparticles, semiconductor nanowires, semiconductor nanobricks, metal nanoparticles, metal nanowires, metal nanobricks, polymer nanoparticles, polymer nanowires, polymer nanobricks, ceramic nanoparticles, ceramic nanowires, ceramic nanobricks, metal oxide nanoparticles, metal oxide nanowires, metal oxide nanobricks, fluoride nanoparticles, fluoride nanowires, and fluoride nanobricks.

[0008]

[0009] In some embodiments, the template nanostructure comprises a modified nucleic acid template nanostructure each modified with at least one nano moiety, and the step of preparing a template solution comprising the template nanostructure is a step of forming a nucleic acid template nanostructure in the template solution, wherein each of the nucleic acid template nanostructures comprises at least one pore region and a non-pore region outside the at least one pore region; and a step of mixing at least one nano moiety with the template solution to assemble the at least one nano moiety into at least one pore region of the nucleic acid template nanostructure.

[0009]

[0010] In some embodiments, the nucleic acid template nanostructure comprises a deoxyribonucleic acid (DNA) nanostructure, a ribonucleic acid (RNA) nanostructure, a locked nucleic acid (LNA) nanostructure, or a peptide nucleic acid (PNA) nanostructure.

[0010]

[0011] In some embodiments, the nano - moiety comprises one or more substances selected from the group consisting of carbon nanotubes (CNTs), polymer - coated CNTs, CNT films, semiconductor nanoparticles, semiconductor nanowires, semiconductor nanobricks, metal nanoparticles, metal nanowires, metal nanobricks, polymer nanoparticles, polymer nanowires, polymer nanobricks, ceramic nanoparticles, ceramic nanowires, ceramic nanobricks, metal - oxide nanoparticles, metal - oxide nanowires, metal - oxide nanobricks, fluoride nanoparticles, fluoride nanowires, and fluoride nanobricks.

[0011]

[0012] In some embodiments, the pore region of the nucleic - acid - template nanostructure is formed of type - 1 nucleic - acid bricks, and the non - pore region of the nucleic - acid - template nanostructure is formed of type - 2 nucleic - acid bricks that are different from the type - 1 nucleic - acid bricks in the nucleic - acid sequence.

[0012]

[0013] In some embodiments, the step of forming the nucleic - acid - template nanostructure in the template solution further comprises the step of forming a type - 1 nucleic - acid handle in at least one pore region of the nucleic - acid - template nanostructure; the step of assembling at least one nano - moiety on top of the nucleic - acid - template nanostructure includes the step of forming a type - 2 nucleic - acid handle on the at least one nano - moiety; and the step of assembling at least one nano - moiety on top of at least one pore region of the nucleic - acid - template nanostructure by the interaction between the type - 1 nucleic - acid handle and the type - 2 nucleic - acid handle.

[0013]

[0014] In some embodiments, the type - 1 nucleic - acid handle and the type - 2 nucleic - acid handle are complementary single - stranded nucleic - acid strands.

[0015] In some embodiments, the step of depositing at least one template nanostructure on a substrate comprises forming a patterned alignment layer on the substrate, the patterned alignment layer comprising a plurality of pores; dip-coating a template solution containing the template nanostructure onto the patterned alignment layer; and incubating the substrate to diffuse the template nanostructure into the pores.

[0014]

[0016] In some embodiments, the step of incubating the substrate comprises dehydrating or evaporating the substrate in a sealed chamber for a predetermined time.

[0017] In some embodiments, the substrate comprises a semiconductor, an oxide, a nitride, a metal, a polymer, or graphene.

[0015]

[0018] In some embodiments, the method can further comprise etching the nucleic acid template nanostructure in its non-pore regions.

[0019] In some embodiments, the nucleic acid template nanostructure is etched in its non-pore regions by cleaving nucleic acid strands that are complementary to the nucleic acid strands.

[0016]

[0020] In some embodiments, the step of etching the nucleic acid template nanostructure in its non-pore regions comprises etching the nucleic acid template nanostructure to substantially flatten its top surface.

[0017]

[0021] In some embodiments, prior to the step of forming at least one fixation structure on the substrate, the method can further comprise forming an intermediate layer on the substrate to facilitate adhesion of the fixation structure to the substrate.

[0018]

[0022] In some embodiments, at least one fixation structure has a thickness greater than 10 nm.

[0023] In some embodiments, at least one fixed structure comprises a dielectric material or a metallic material.

[0019]

[0024] In some embodiments, the method can further comprise removing at least a portion of at least one nucleic acid template nanostructure.

[0025] In some embodiments, the removed portion of the at least one nucleic acid template nanostructure is not covered by at least one fixed structure prior to the removing step.

[0020]

[0026] In some embodiments, at least a portion of the nucleic acid template nanostructure is removed by a washing process, a thermal annealing process, or a chemical oxidation process.

[0027] In some embodiments, the template nanostructure includes a first component for forming an electronic device and a second component that is different from the first component in terms of material, and the method further comprises removing at least a portion of the second component of the template nanostructure.

[0021]

[0028] In some embodiments, the method can further comprise forming a field effect transistor (FET) array, a sensor array, a memory device array, or a quantum device array based on at least one template nanostructure fixed to a substrate.

[0022]

[0029] In another aspect of the present application, a method of forming a field effect transistor (FET) device on a substrate is provided. The method includes preparing a template solution containing a nucleic acid template nanostructure, wherein the nucleic acid template nanostructure is modified with at least one nanowire; depositing on the substrate at least one nucleic acid template nanostructure modified with at least one nanowire by contacting the template solution with the substrate; forming on the substrate at least one fixing structure that intersects all or a part of each of the at least one nanowires to fix all or a part of the at least one nanowire to the substrate; removing at least a part of at least one nucleic acid template nanostructure not covered by the at least one fixing structure; forming source and drain contacts on the substrate along the at least one nanowire; and forming a gate structure between the source and drain contacts and along the at least one nanowire.

[0023]

[0030] In some embodiments, the step of preparing a solution containing a nucleic acid template nanostructure includes forming the nucleic acid template nanostructure in the template solution; and mixing at least one nanowire with the template solution to assemble the at least one nanowire onto the nucleic acid template nanostructure.

[0024]

[0031] In some embodiments, each of the nucleic acid template nanostructures includes at least one pore region and a non-pore region outside the at least one pore region, and the at least one nanowire is assembled into at least one pore region of the nucleic acid template nanostructure.

[0025]

[0032] In some embodiments, the method can further include etching the nucleic acid template nanostructure in its non-pore region to substantially flatten its upper surface.

[0026]

[0033] In some embodiments, the method can further include removing at least one type of fixed structure from the surface of the substrate.

[0034] In some embodiments, the nanowires include carbon nanotubes or semiconductor nanowires.

[0027]

[0035] In yet another aspect of the present application, a field effect transistor (FET) device is provided. The FET can be formed by the method of the foregoing aspect. The FET device can include a substrate; a nucleic acid template-induced self-assembled nanowire formed on the substrate; at least one type of fixed structure formed on the substrate and intersecting the nanowire; a source contact and a drain contact formed on the substrate; and a gate structure formed between the source contact and the drain contact and along the nanowire.

[0028]

[0036] What has been described above is an overview of the present application, which is simplified, summarized, and details may be omitted. Those skilled in the art will recognize that this section is merely illustrative and is not intended to limit the scope of the present application in any way. This summary section is not intended to identify the important features or essential features of the subject matter recited in the claims, nor is it intended to act as an aid in determining the scope of the subject matter recited in the claims.

[0029]

[0037] The drawings referred to herein form a part of the specification. Unless the detailed description clearly indicates otherwise, the features shown in the drawings illustrate only some embodiments of the application and not all embodiments of the application, and the reader of the specification should not be implied to the contrary.

Brief Description of the Drawings

[0030]

Figure 1

[0038] It is a diagram for explaining a flowchart of a method for forming a nanostructure array on a substrate according to an embodiment of the present application.

Figure 2

[0039] FIG. is a diagram for explaining an exemplary substrate after a fixing structure is formed on the substrate.

Figure 3

[0040] FIG. is a flowchart for explaining a method of forming a nano-structure array on a substrate according to an embodiment of the present application.

Figure 4

[0041] FIGS. 4(a) to 4(c) are diagrams for explaining a method of forming a nucleic acid template nano-structure according to an embodiment of the present application.

Figure 5

[0042] FIG. is a diagram for explaining a method of aggregating at least one nano-part to a nucleic acid template nano-structure according to an embodiment of the present application.

Figure 6

[0043] FIG. is a diagram for explaining a method of coating a DNA anti-handle on a CNT according to an embodiment of the present application.

Figure 7

[0044] FIG. is a diagram for explaining a method of selectively etching a nucleic acid template nano-structure in its non-porous region according to an embodiment of the present application.

Figure 8

[0045] FIG. 8(A) is a diagram for explaining a method of depositing a nucleic acid template nano-structure on a substrate according to an embodiment of the present application; FIG. 8(B) is a diagram showing an optical image and an SEM image of a CNT-modified DNA template nano-structure deposited on a substrate after lift-off of a photoresist layer according to an example of the present application; FIG. 8(C) is a diagram showing statistical data (left axis) and cumulative rate (right axis) of counts for the aligned structures of FIG. 8(B) in their respective unique orientations; FIG. 8(D) is a diagram showing a plot of the angular distribution of the aligned array against the length of the DNA brick crystal template.

Figure 9

[0046] FIG. is a diagram for explaining an exemplary nucleic acid template nano-structure on a substrate after a fixing strand is formed on the substrate.

Figure 10

[0047] FIG. is a diagram for explaining an exemplary substrate after a nucleic acid template nano-structure is removed from the substrate.

Figure 11

[0048] FIG. is a flowchart of a method for forming a FET device according to an embodiment of the present application.

Figure 12

[0049] FIGS. 12(a), 12(b) and 12(c) are diagrams for explaining a method for forming a gate structure of a FET device according to an embodiment of the present application.

Figure 13

[0050] FIGS. 13(a) and 13(b) are diagrams for explaining an example of a single-channel DNA-free CNTFET.

Figure 14

[0051] FIGS. 14(a) and 14(b) are diagrams for explaining an example of a multi-channel DNA-free CNTFET.

Figure 15

[0052] FIGS. 15(a) and 15(b) are diagrams for explaining Ids-Vgs curves and gm-Vgs curves for a single-channel CNTFET and a multi-channel CNTFET, respectively.

Figure 16

[0053] FIG. shows a multi-channel CNTFET having ssDNA at the channel interface. (A) Schematic diagram of the devised fixed and washed approach. (B) Enlarged AFM images along the x protrusion direction and the z protrusion direction of the CNT array after template removal. The scale bar is 25 nm. See also FIGS. 20 and 21. (C) Schematic diagram for introducing ssDNA at the channel interface and for fabricating the FET. (D) Ids-Vgs curves (plotted logarithmically at Vds = 0.5 V) for the multi-channel DNA-containing CNTFET before (line I) and after (line II) thermal annealing. See also FIG. 24.

Figure 17

[0054] This is a figure showing a diagram for constructing a top-gate high-performance CNTFET. (A) Schematic diagram of the fabrication of a top-gate DNA-free FET. (B) Enlarged SEM images of the constructed multi-channel CNTFET along the x-protrusion direction and z-protrusion direction. The dashed enclosure indicates the collective CNT array. The scale bar is 100 nm. See also Figure 26. (C and D) Ids-Vgs curves (solid lines, plotted on the left axis with logarithmic scale) and gm-Vgs curves (dashed lines, plotted on the right axis with linear scale) for single-channel (C) CNTFET and multi-channel (D) CNTFET. Lines I, II, and III in C and D represent Vds of -0.8 V, -0.5 V, and -0.1 V, respectively. See also Figures 25 and 27. (E) Benchmarking of the current multi-channel CNTFET in D, including other reports of high-performance CNTFETs. Element performance from previous publications (references 3, 5, 16 - 18, 23 - 27) was obtained in the range of Vds = -0.5 V and channel length from 100 nm to 500 nm. See also Figures 32 and 33.

Figure 18

[0055] This is a figure showing the reduced TEM images (A) and enlarged TEM image (B) of DNA-coated CNTs. The scale bar in A is 200 nm. The scale bar in B is 100 nm.

Figure 19

[0056] This is a figure showing the height profile of CNTs. AFM images (A) and corresponding height profiles (B) for three different CNTs. The dashed line in (A) represents the position of the height profile in (B). The scale bar is 100 nm. As shown in the height profile, the CNT diameter distribution ranges from less than 1 nm to about 1.5 nm.

Figure 20

[0057] This is a figure showing the SEM image of the fixed CNT array after DNA removal. In the range of the dashed enclosure I, both ends of the CNTs were fixed by two metal bars and used for the FET structure. In the range of the dashed enclosure II, the unfixed CNT ends were disturbed during DNA removal and not used for the FET structure. The scale bar is 500 nm.

Figure 21

[0058] Figure showing the AFM image of the immobilized CNT array after DNA removal. (A) 3D reduced view of the CNT array immobilized by two metal rods. (B) Enlarged view of the CNT immobilized by the metal rod. The scale bar is 25 nm. (C) More enlarged AFM image of the immobilized CNT array after DNA removal. The scale bar is 50 nm.

Figure 22

[0059] Figure showing a schematic diagram of various compositions at the channel interface. (A) After assembly and (B) after removing the DNA template and metal ions.

Figure 23

[0060] Figure showing the reduced SEM image of the constructed multi-channel DNA-containing CNTFET. The scale bar is 200 nm.

Figure 24

[0061] Figure showing the Ids-Vgs curves of the multi-channel DNA-containing CNTFET. CNTFET before (A) and after (B) thermal annealing. Various lines represent individual CNTFETs. (C) One type of DNA-containing CNTFET in (A) for measurements repeated at 2V to -3V. Various lines represent individual measurements. Vds in (A), (B), and (C) was all set at -0.5V. Ids was normalized to the CNT pitch.

Figure 25

[0062] Figure showing the Ids-Vgs curves of the single-channel DNA-free CNTFET during all operations. Various lines represent individual CNTFETs. Vds was set at -0.5V.

Figure 26

[0063] Figure showing the reduced SEM image of the constructed multi-channel DNA-free CNTFET. The scale bar is 200 nm.

Figure 27

[0064] Figure showing the Ids-Vgs curves of the multi-channel DNA-free CNTFET during all operations. Various lines represent individual CNTFETs. Ids was normalized to the CNT pitch. Vds was set at -0.5V.

Figure 28

[0065] It is a diagram showing the Ids-Vds curve of a multi-channel DNA-free CNTFET having a channel length of 200 nm and having the highest on-current density. The various lines represent different Vgs values. Vgs ranged from -1.8 V to 0.2 V in steps of 0.2 V. Ids was normalized to the pitch between CNTs.

Figure 29

[0066] It is a diagram showing the transport performance of a multi-channel DNA-free CNTFET having a channel length of 100 nm. (A) Ids-Vgs curve (left axis, plotted on a logarithmic scale) and gm-Vgs curve (right axis, plotted on a linear scale) at Vds = 0.5 V. Both Ids and gm were normalized to the pitch between CNTs. (B) Ids-Vds curve. The various lines represent different Vgs values. Vgs ranged from -1.4 V to 0.6 V in steps of 0.2 V.

Figure 30

[0067] It is a diagram showing the Ids-Vds curve of a multi-channel DNA-free CNTFET containing metal CNT impurities. Vds was set at -0.5 V. Ids was normalized to the pitch between CNTs.

Figure 31

[0068] Figure showing the performance comparison of constructed multi-channel CNTFETs with various interface compositions. From (A) to (E), the mutual conductance, subthreshold swing, threshold voltage, on-state conductance, and Ion / Ioff are compared for various FET samples. Squares represent multi-channel DNA-containing CNTFETs before annealing. Circles represent thermally annealed multi-channel DNA-containing CNTFETs. Triangles represent multi-channel DNA-free CNTFETs. The sample numbers were the test numbers assigned to each FET. From (F) to (J), the statistical data of mutual conductance, subthreshold swing, threshold voltage, on-state conductance, and Ion / Ioff for various channel compositions are shown. Bar I represents multi-channel DNA-containing CNTFETs before annealing. Bar II represents thermally annealed multi-channel DNA-containing CNTFETs. Bar III represents multi-channel DNA-free CNTFETs. All performance data were obtained at Vds - 0.5V. For multi-channel DNA-containing CNTFETs before and after annealing, the performance data were obtained at Vgs - 3.0V. For multi-channel DNA-free CNTFETs, the performance data were obtained at Vgs - 1.5V.

Figure 32

[0069] FIG. showing the benchmarking of CNTFETs with various CNT pitches. (A) Subthreshold swing, (B) transconductance (gm), and (C) on-state conductance (Gon) of the multi-channel CNTFETs of the present invention, including other reports (equal CNT pitch). Device performance from previous publications (refs. 3, 5, 15, 23) is obtained at Vds - 0.5 V. Specifically, the transport performance is obtained from FIGS. 4D (ref. 23), FIGS. 4A and 4C (ref. 3), FIGS. 2A and 2B (ref. 5), and FIGS. 3C and 4B (ref. 15). The channel length ranges from 100 nm to 500 nm. In each panel, the transport performance (i.e., subthreshold swing, on-state conductance, and transconductance) is plotted against the structural parameter (CNT pitch). High transport performance requires the simultaneous demonstration of a small subthreshold swing, high transconductance, and high on-state conductance. The multi-channel CNTFETs of the present invention exhibit the smallest subthreshold swing, the highest transconductance, and the second highest on-state conductance compared to other FETs with various CNT pitches.

Figure 33

[0070] Figure showing the benchmarking of CNTFETs with various CNT densities. (A) Subthreshold swing, (B) transconductance (gm), and (C) on-state conductance (Gon) of the multi-channel CNTFETs of the present invention, including other reports of high-density CNT arrays (unequal CNT pitch). Device performance from previous publications (references 16-18, 24-29) was obtained at Vds - 0.5V. Specifically, transport performance was obtained from FIGS. 4D (reference 17), 1D (reference 18), 1F (reference 16), 2C (reference 25), 4A (reference 29), 11 (reference 28), 4B (reference 26), 2B and 2D (reference 27), and 4C (reference 24). The channel length ranges from 100nm to 500nm. In each panel, the transport performance (i.e., subthreshold swing, on-state conductance, and transconductance) is plotted against the structural parameter (CNT density). High transport performance requires the simultaneous demonstration of a small subthreshold swing, high transconductance, and high on-state conductance. The multi-channel CNTFETs of the present invention exhibit the second smallest subthreshold swing, the highest transconductance, and the third highest on-state conductance compared to other FETs with various CNT densities. Notably, the FET with the smallest subthreshold swing (reference 27) exhibits an on-current density of less than 5uA / um, which does not meet the transport requirements of high-performance CNTFETs.

Figure 34

[0071] Figure showing a reduced TEM image of an assembled fixed-width CNT array with a 16nm CNT pitch. The fixed-width DNA template exhibited a predetermined width of approximately 34nm. The arrow points to the assembled CNTs on the DNA template. The scale bar is 100nm.

Figure 35

[0072] Figure showing an SEM image of a CNT-modified DNA template aligned with 120 holes. In the reduced SEM image, the rectangular enclosure points to the magnified location. The arrow in the magnified SEM image points to the aligned DNA template. The scale bar is 2um.

Figure 36

[0073] This is a diagram showing the SEM image of the DNA template placed within the rectangular PMMA void area. The width of the PMMA void was designed to be 2 um with a length-to-width aspect ratio of 1. The scale bar is 4 um.

Figure 37

[0074] This is a diagram showing various approaches for preparing a CNT array having a designer array width, array pitch, and CNT count at the centimeter scale. (A) A continuous CNT film (having a random orientation) is processed in a post-assembly etching step to generate a designer array width / array pitch / CNT count. (B) By placing a fixed-width CNT array (assembled using 3D DNA nanotrenches) within prefabricated PMMA voids, followed by PMMA lift-off and DNA removal, the designer array geometry could be directly generated without post-assembly etching.

Modes for Carrying Out the Invention

[0031]

[0075] The following detailed description of exemplary embodiments of the present application refers to the accompanying drawings, which form a part of the description. The drawings illustrate specific exemplary embodiments in which the present application can be implemented. The drawings are not intended to be drawn to scale. For clarity, not all components may be labeled in all the drawings. The detailed description, including the drawings, describes these embodiments in sufficient detail so that those skilled in the art can implement the present application. Those skilled in the art can further utilize other embodiments of the present application and make logical, mechanical, and other changes without departing from the spirit or scope of the present application. Therefore, the reader of the following detailed description should not interpret the description in a limiting sense, and only the appended claims define the scope of the embodiments of the present application.

[0032]

[0076] In this application, the use of the singular form includes the plural form unless otherwise specifically indicated. In this application, the use of "or" means "and / or" unless otherwise indicated. Further, the use of the term "including" and other forms such as "includes" and "included" is not limiting. In addition, terms such as "element" or "component" include both elements and components that include one unit, and both elements and components that include one or more sub-units, unless otherwise specifically indicated. Further, the section headings used in this specification are for organizational purposes only and should not be considered as limiting the subject matter described.

[0033]

[0077] It has been found that using biological entities (e.g., biomolecules and living organisms) to organize functional materials, i.e., biomanufacturing, enables fabrication solutions beyond the limits of electron beam lithography. In particular, self-assembling deoxyribonucleic acid (DNA) structures have templated materials with diverse shape properties, including oxides, graphene, plasmonic, polymers, CNTs, and metal wiring. Despite these demonstrations, challenges remain in constructing high-performance FETs from biomanufacturing. In addition to the disorder of typical aggregates, contaminants around the assembled semiconductors and other materials further degrade the transport performance of the FETs. On the other hand, the wide orientation distribution during the surface placement of biotemplated materials hinders the large-scale alignment of biomanufacturing.

[0034]

[0078] Embodiments of the present application represent a missing bridge between nanometer-precision biomolecular self-assemblies and solid-state high-performance electronic devices. Using self-assembling dense nucleic acid (e.g., DNA) nanotrenches to immobilize and retain DNA hybridization-mediated CNT alignment, spatially shielded integration of nanotube electrons (SHINE) is developed to create equidistant CNT arrays. By programming the DNA trenches, the pitch between CNTs beyond the current lithography limit is periodically and rationally adjusted. Furthermore, the indicators of pitch precision and array uniformity are improved compared to those prepared from a thin film approach. Misaligned CNTs are repelled from the DNA nanotrenches due to electrostatic repulsion. A post-fixation washing approach is further introduced to remove the DNA template without degrading the CNT alignment. Based on the uniform CNT pitch and clean channel interface, a solid-state multi-channel PMOS (p-channel metal-oxide-semiconductor) CNTFET is constructed, simultaneously exhibiting high on-state performance and fast on / off switching. By spatially confining the placement of CNT-modified fixed-width DNA templates using lithographically defined PMMA holes, an aligned array with a predetermined geometry is demonstrated across a centimeter-scale silicon substrate. Using SHINE, addressable biofabrication from DNA, RNA, and proteins can induce centimeter-scale assemblies of electronic materials into designer devices at single-molecule resolution. Thus, by fabricating high-performance ultra-scale devices at the biology-electronics interface, diverse applications in the future post-Si era, such as multiplexed biomolecular sensors and 3D FET / memory, or various types of mechanical, optical, or magnetic devices or structures at nanoscale resolution, may become possible.

[0035]

[0079] FIG. 1 illustrates a flowchart of a method 100 for forming a nanostructure array on a substrate according to an embodiment of the present application. The method 100 can include the following steps 110-140.

[0036]

[0080] In step 110, a template solution containing a template nanostructure is prepared.

[0081] In some embodiments, the template nanostructure can include, without limitation, a nucleic acid template, a modified nucleic acid template, a protein template, a polymer template, a CNT, a polymer-coated CNT, a CNT film, a semiconductor nanoparticle, a semiconductor nanowire, a semiconductor nanobrick, a metal nanoparticle, a metal nanowire, a metal nanobrick, a polymer nanoparticle, a polymer nanowire, a polymer nanobrick, a ceramic nanoparticle, a ceramic nanowire, a ceramic nanobrick, a metal oxide nanoparticle, a metal oxide nanowire, a metal oxide nanobrick, a fluoride nanoparticle, a fluoride nanowire, and a fluoride nanobrick.

[0037]

[0082] In some embodiments, the template nanostructure can include a modified nucleic acid template nanostructure. For example, the template nanostructure may be a CNT-modified nucleic acid template nanostructure or a gold nanorod-modified nucleic acid template nanostructure.

[0038]

[0083] In some embodiments, the template nanostructure is formed in a solution. In other embodiments, the template nanostructure is merely mixed in a solution. The solution can be diverse according to the template nanostructure.

[0039]

[0084] In step 120, at least one template nanostructure is deposited on the substrate by bringing the template solution into contact with the substrate.

[0085] A substrate refers to a material onto which another material is applied. In some embodiments, the substrate can include, without limitation, silicon, silicon dioxide (also referred to as silica), aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), an alloy of silicon and germanium, or indium phosphide (InP). In some embodiments, the substrate can include silicon nitride, carbon, and / or a polymer. In some embodiments, the substrate can be inorganic or organic. In some embodiments, the substrate can include graphene and / or graphite. In some embodiments, the substrate includes a metal, such as aluminum, copper, or iron. In some embodiments, the substrate is a hybrid of any two or more materials (e.g., including a mixture) (e.g., a hybrid of an inorganic material and an organic material, or a hybrid of two or more different inorganic or organic materials). For example, the substrate can include a mixture of an inorganic material and an organic material, a mixture of two or more different inorganic materials, or a mixture of two or more different organic materials. In some embodiments, the substrate includes a semiconductor material or a mixture of semiconductor materials. Semiconductor materials can include, without limitation, group IV elemental semiconductors, group IV compound semiconductors, group VI elemental semiconductors, III-V semiconductors, II-VI semiconductors, I-VII semiconductors, IV-VI semiconductors, IV-VI semiconductors, V-VI semiconductors, II-V semiconductors, oxides, layered semiconductors, magnetic semiconductors, organic semiconductors, charge transfer complexes, and combinations thereof.

[0040]

[0086] In some embodiments, the step of depositing a template nanostructure on a substrate may include forming a patterned alignment layer having a plurality of pores on the substrate, and depositing the template nanostructure on the substrate to diffuse the template nanostructure into the plurality of pores. Preferably, the substrate can be further incubated, for example, by a step of dehydration or evaporation to remove the solvent from the substrate after diffusion. In some embodiments, each pore can be filled with one type of template nanostructure, and in some other embodiments, each pore can be filled with one or more types of template nanostructures.

[0041]

[0087] In some embodiments, the template nanostructure can be directly deposited on the substrate without forming a patterned alignment layer having a plurality of pores on the substrate.

[0042]

[0088] For further details on exemplary methods of depositing at least one type of template nanostructure on a substrate, reference can be made to PCT Application No. PCT / CN2020 / 082377, titled "method for depositing template nanostructures on a substrate and nanostructure arrays", filed on March 31, 2020, and PCT Application No. PCT / CN2020 / 082777, titled "method for depositing template nanostructures on a substrate and nanostructure arrays", filed on April 1, 2020, the entire contents of which are incorporated herein by reference.

[0043]

[0089] In step 130, at least one type of fixing structure is formed on the substrate, and at least one type of fixing structure intersects all or part of at least one type of template nanostructure to fix all or part of at least one type of template nanostructure to the substrate.

[0044]

[0090] In some embodiments, the fixing structure can include a dielectric material or a metal material. The material of the fixing structure for fixing the template nanostructure desirably has a relatively strong adhesion to the template nanostructure and the substrate. For example, the fixing structure can include Mo, Pd, Au, Ti, SiO2, or HfO2.

[0045]

[0091] In some embodiments, before forming the fixing structure on the substrate, an intermediate layer is formed on the substrate to promote the adhesion of the fixing structure to the substrate. The material of the intermediate layer can vary depending on the materials of the fixing structure and the substrate. For example, when the substrate is SiO2 and the fixing structure is gold, an intermediate layer of Cr or Ti can be formed therebetween to promote adhesion. In some other embodiments, a metallization method, a salinization method, or a chemical modification method can be implemented on the surface of the substrate to promote its adhesion to the fixing structure.

[0046]

[0092] In some embodiments, the fixing structure has a thickness greater than 10 nm (e.g., 20 nm, 50 nm, 100 nm, 150 nm, etc.) to avoid breakage during a cleaning process or other severe processes.

[0047]

[0093] In some embodiments, the fixing structure can be wider than the template nanostructure, and thus there is sufficient surface contact between the fixing structure and the substrate, which stabilizes the fixing structure on the surface of the substrate. For example, the fixing structure can be 20 nm, 50 nm, 80 nm, 100 nm wider than the template nanostructure.

[0048]

[0094] In some embodiments, the fixing structure can have a rectangular shape. In some other embodiments, the fixing structure can have an elliptical shape, a trapezoidal shape, or other suitable shapes. In some embodiments, depending on the dimensions and shape of the template nanostructure, one, two, or more fixing structures can be formed on the substrate to intersect with one template nanostructure at a desired position of the template nanostructure. Further, two or more template nanostructures can share one or more fixing structures depending on the positional relationship between the shape and size of the template nanostructure and the fixing structure.

[0049]

[0095] Figure 2 illustrates an exemplary substrate after the fixing structure is formed on the substrate. As shown in Figure 2, a plurality of template nanostructures 220 are deposited on the substrate 210, and two rectangular fixing structures 230a and 230b are formed in their respective template nanostructures 220 to fix the template nanostructures 220 to the substrate 210.

[0050]

[0096] In step 140, one or more electronic elements are formed based on at least one type of template nanostructure fixed to the substrate.

[0097] After the fixing structure is formed on the substrate, the template nanostructure is fixed to the substrate. Subsequently, subsequent processes can be performed on the template nanostructure to form the desired electronic element. Since the alignment quality of the template nanostructure can be maintained by the fixing structure, the template nanostructure must not be disturbed during subsequent processes. The electronic element may be a FET array, a sensor array, a memory device array, or a quantum element array.

[0051]

[0098] In some embodiments, the template nanostructure can include a first component for forming an electronic device or other types of nano-devices and nanostructures, and a second component that is different from the first component in the material. In one example, the template nanostructure includes an organic component (e.g., biomaterial, polymer material, etc.) and an inorganic component (e.g., CNT, semiconductor material, metal material, metal oxide material, etc.), and the electronic device is formed based on the inorganic component of the template nanostructure. To exclude contaminants from the organic component, the method can further include the step of removing at least a portion of the organic component of the template nanostructure. The organic component of the template nanostructure can be removed by a cleaning process, a thermal annealing process, or a chemical oxidation process. In other examples, the template nanostructure can have one or more organic components, or one or more inorganic components, and the above-described process or other suitable processes can be performed to remove any one or more of these organic and inorganic components. In a specific example, the template nanostructure is a polymer-coated CNT including a polymer component and a CNT component, and the FET device can be formed based on the CNT component. To exclude contaminants from the polymer, a cleaning process can be performed to remove the polymer from the CNT before the step of forming the FET device.

[0052]

[0099] Those skilled in the art should recognize that various electronic devices or other nano-devices, such as optical nano-devices, magnetic nano-devices, or mechanical nano-devices, etc., can be formed based on various characteristics of the template nanostructure and / or its respective nano-parts (detailed below) fixed to the substrate. For example, when the template nanostructure fixed to the substrate is a CNT or a semiconductor nanowire, an FET or a memory device can be formed based on these CNTs or semiconductor nanowires. When the template nanostructure fixed to the substrate is a gold nanorod, a sensor device can be formed based on these gold nanorods.

[0053]

[0100] Figure 3 illustrates a flowchart of a method 300 for forming a nanostructure array on a substrate in accordance with an embodiment of the present application. The nanostructure array of method 300 can be formed based on a modified nucleic acid template nanostructure fixed to the substrate. Method 300 can include the following steps 310-360.

[0054]

[0101] In step 310, the nucleic acid template nanostructure is formed in a template solution. Each of the nucleic acid template nanostructures includes at least one pore region and a non-pore region outside of the at least one pore region.

[0055]

[0102] In some embodiments, the nucleic acid template nanostructures include one or more deoxyribonucleic acid (DNA) nanostructures, one or more ribonucleic acid (RNA) nanostructures, one or more locked nucleic acid (LNA) nanostructures, one or more peptide nucleic acid (PNA) nanostructures, or any combination of these nanostructures.

[0056]

[0103] In some embodiments, each pore region of the nucleic acid template nanostructures can have a width of 1 nm to 1 μm (e.g., 10.6 nm, 12.7 nm, 16.8 nm, 24.1 nm, or 25.3 nm) and a length of 10 nm to 100 μm (e.g., 500 nm, 1.5 μm, 10 μm, or 20 μm). The pore regions can have the same dimensions or different dimensions, and the non-pore regions can also have the same dimensions or different dimensions.

[0057]

[0104] In some embodiments, the nucleic acid template nanostructures are formed of nucleic acid bricks, which can be modeled as Lego-like bricks (Y. Ke et al., DNA brick crystals with prescribed depths, Nature Chem. 6, 994-1002 (2014), which is incorporated herein by reference). FIGS. 4(a)-4(c) illustrate an exemplary method of forming nucleic acid template nanostructures. FIG. 4(a) illustrates the DNA bricks used to form the nucleic acid template nanostructures. FIG. 4(b) illustrates a nucleic acid template nanostructure that includes a plurality of pore regions (also referred to as "trenches") and a plurality of non-pore regions (also referred to as "sidewalls") outside of the pore regions. Each trench of the nucleic acid template nanostructure is formed of a first type of DNA brick(s), and each sidewall of the nucleic acid template nanostructure is formed of a second type of DNA brick(s) that is different from the first type of DNA brick in the nucleic acid sequence. Alternatively, the first type of DNA brick and the second type of DNA brick can be assembled simultaneously. In some embodiments, the first type of DNA brick and the second type of DNA brick can contain different numbers of helices and / or different alignments of the helices that result in DNA bricks of different shapes and / or different sizes. In the example shown in FIG. 4(a), the first type of DNA brick (6 helices × 4 helices) and the second type of DNA brick (6 helices × 8 helices) constitute a characteristic repeating unit of the nucleic acid template nanostructure, and the arrow in FIG. 4(b) indicates the direction of extension of the characteristic repeating unit of the nucleic acid template nanostructure. By extending the characteristic repeating unit along the x-z direction, a DNA template nanostructure is produced that has parallel trenches formed between two adjacent sidewalls, each of which. FIG. 4(c) illustrates the characteristic repeating unit, where the light and dark bundles represent the sidewalls and the underlying layer of the characteristic repeating unit, respectively.

[0058]

[0105] In one example, the assembly of DNA bricks into nucleic acid template nanostructures follows a multi-step isothermal reaction. For example, 90 μL of a mixture of unpurified DNA bricks (IDT DNA Inc. or Sangon Biotech., pH 7.9, containing 300 - 600 nM of each brick without careful stoichiometric adjustment), 5 mM tris(hydroxymethyl)aminomethane (Tris), 1 mM ethylenediaminetetraacetic acid (EDTA), and 40 mM MgCl₂ are sequentially incubated at 80 °C for 15 minutes, 44 °C for 12 hours, 39 °C for 72 hours, and 31 °C for 8 hours to obtain a solution containing nucleic acid template nanostructures. The synthesized nucleic acid template nanostructures can be used as-is without further purification.

[0059]

[0106] In other embodiments, one of ordinary skill in the art should recognize that the nucleic acid template nanostructures can have a planar or other non-planar shape.

[0107] In step 320, at least one type of nano-portion is mixed with the template solution to assemble at least one type of nano-portion into at least one pore region of the nucleic acid template nanostructure.

[0060]

[0108] In some embodiments, the nano-portions can include, without limitation, carbon nanotubes (CNTs), polymer-coated CNTs, CNT membranes, semiconductor nanoparticles, semiconductor nanowires, semiconductor nanobricks, metal nanoparticles, metal nanowires, metal nanobricks, polymer nanoparticles, polymer nanowires, polymer nanobricks, ceramic nanoparticles, ceramic nanowires, ceramic nanobricks, metal oxide nanoparticles, metal oxide nanowires, metal oxide nanobricks, fluoride nanoparticles, fluoride nanowires, fluoride nanobricks, single-stranded or double-stranded nucleic acids (e.g., DNA, RNA, LNA, PNA). In some embodiments, the nano-portions can also include, without limitation, plasmonic nanomaterials, fluorescent / phosphorescent nanomaterials, ferromagnetic nanomaterials, paramagnetic nanomaterials, antiferromagnetic nanomaterials, superparamagnetic nanomaterials, semiconductor nanomaterials, conductor nanomaterials, or insulator nanomaterials.

[0061]

[0109] In some embodiments, the first type of nucleic acid handle(s) may be formed in at least one pore region of the nucleic acid template nanostructure; the second type of nucleic acid handle(s) capable of interacting with the first type of nucleic acid handle(s) may be formed of at least one type of nano-portion, and vice versa. The nucleic acid handle may be formed and attached at a desired position of the nano-portion according to the nucleic acid template nanostructure and the location where the nano-portions are to be assembled. The nano-portions can be assembled onto the nucleic acid template nanostructure by the interaction between the first type of nucleic acid handle(s) and the second type of nucleic acid handle(s). In some embodiments, the first type of nucleic acid handle and the second type of nucleic acid handle are partially or completely complementary single-stranded nucleic acid strands.

[0062]

[0110] In one example, four 14-nucleotide (nt) single-stranded DNA (ssDNA) handles are introduced into the pore region of the nucleic acid template nanostructure by extending the 3’ or 5’ ends of four selected DNA bricks (see the arrows in Fig. 4(c)). Then, with respect to Fig. 5, a DNA anti-handle (sequence complementary to the DNA handle introduced into the pore region) is coated onto the CNT via non-covalent interactions to form an anti-handle-mediated CNT aggregate. Thereafter, hybridization occurs between the DNA handle in the parallel nanotrenches of the nucleic acid template nanostructure and the anti-handle-mediated CNT aggregate at a predetermined CNT-to-CNT pitch under mild conditions.

[0063]

[0111] Figure 6 illustrates an exemplary method for coating a DNA antihandle onto a CNT (Z. Zhao, Y. Liu, H. Yan, DNA origami templated self-assembly of discrete length single wall carbon nanotubes, Org. Biomol. Chem. 11, 596 - 598 (2013), which is incorporated herein by reference). First, strand L1 (25 μM, sequence: 5’-GATGCGAGGCTATTCTGTGTGTGTGTGTGTGTGTGTGTGTGTGTGTGTGTGTGTGT-3’) was mixed with monolayer CNT powder (0.1 mg) in buffer (1× Tris-borate EDTA (TBE) at pH 8.3 and 100 mM NaCl). The mixture was sonicated for over 1 hour and centrifuged at 16000 g for 30 minutes at high speed to remove aggregates. The supernatant solution was then purified using a 100 kD Amicon filter (provided by EMD Millipore) to remove excess DNA. Strand L2 (10 μM, sequence: 5’-AGAATAGCCTCGCATCCCACTTACCACTTA-3’) was added to the purified CNT-L1 sample, annealed from 37 °C to 23 °C within 2 hours, and then incubated at 23 °C for 16 hours. The L2-coated CNTs were used without further purification.

[0064]

[0112] Next, in one example, 0.4 μL of the L2-coated CNTs was mixed with 0.4 μL of the diluted nucleic acid template nanostructure (10× dilution in 15 mM MgCl2 solution) to make a final solution of 6 μL containing 10 mM MgCl2 and 400 mM NaCl for the 24 nm CNT pitch sample, or 6 μL containing 10 mM MgCl2, 300 mM NaCl, and 300 mM LiCl for the 16 nm / 12 nm / 10 nm CNT pitch samples, or 6 μL containing 15 mM MgCl2 and 600 mM NaCl for the 16 nm CNT pitch fixed-width sample. The reaction buffer was incubated at 33 °C for 9 hours and then stored at 4 °C without further purification.

[0065]

[0113] In some embodiments, for DNA brick crystals and aggregates of DNA-coated CNTs, the buffer solution was used according to previous reports (Y. Ke et al., DNA brick crystals with prescribed depths, Nature Chem. 6, 994 - 1002 (2014); Z. Zhao, Y. Liu, H. Yan, DNA origami templated self-assembly of discrete length single wall carbon nanotubes, Org. Biomol. Chem. 11, 596 - 598 (2013), which are incorporated herein by reference).

[0066]

[0114] In step 330, the nucleic acid template nanostructure is etched in its non-porous region.

[0115] In some embodiments, the nucleic acid template nanostructure is etched in the non-porous region by excising nucleic acid strands that are completely complementary to the nucleic acid strands in the non-porous region (B. Wei et al., Complex Reconfiguration of DNA Nanostructures, Angew. Chem. Int. Ed. 2014, 53, 7475 - 7479 (2014), which are incorporated herein by reference). The etching mechanism is based on the hybridization of complementary DNA sequences. When specific nucleic acid strands are introduced to etch the strands in the non-porous region of the nucleic acid template nanostructure, they only etch away their perfectly complementary partner (i.e., the strand in the non-porous region) in the nucleic acid template nanostructure. In this etching method, the removal of one nucleic acid strand in the non-porous region reveals a new toehold that is exposed in the adjacent strand, and thus enables the removal of the linked nucleic acid strands without the need to modify the strands with a pre-designed external toehold. By using this method, the nucleic acid template nanostructure can be reconfigured into the above shape, and the thickness to be etched can be precisely controlled.

[0067]

[0116] Figure 7 illustrates an exemplary method of etching a nucleic acid template nanostructure in a non-porous region. In this example, after etching, the upper surface of the nucleic acid template nanostructure is substantially flat. In other embodiments, the upper surface of the non-porous region may be higher or lower than the upper surface of the porous region.

[0068]

[0117] In some embodiments, step 330 can be omitted, and thus it can be recognized that the shape of the nucleic acid template nanostructure is not reconfigured.

[0118] Flattening the upper surface of the nucleic acid template nanostructure helps to remove salt residues in the template nanostructure, especially in the porous region. Salt residues may arise from the residual solution within the nucleic acid template nanostructure due to capillary action. That is, the metal salts of the residual solution may remain within the porous region after evaporation of the water. By etching the nucleic acid template nanostructure, the capillary force is reduced further, and the residual solution is reduced further, and thus the salt residues left in the nucleic acid template nanostructure and the CNT are reduced.

[0069]

[0119] In step 340, the nucleic acid template nanostructure is deposited on the substrate by bringing the template solution into contact with the substrate.

[0120] In some embodiments, the substrate may be the same as that in step 120 of method 100 described above.

[0070]

[0121] In some embodiments, the step of depositing a nucleic acid template nanostructure on a substrate can include forming a patterned alignment layer having a plurality of pores on the substrate; dip-coating a template solution containing the template nanostructure on the patterned alignment layer; and incubating the substrate to diffuse the template nanostructure into the pores. In some embodiments, the step of incubating the substrate can include dehydrating or evaporating the substrate in a sealed chamber for a predetermined time. In some embodiments, each pore can be filled with one type of nucleic acid template nanostructure, and in some other embodiments, each pore can be filled with one or more types of nucleic acid template nanostructures.

[0071]

[0122] Figure 8(A) illustrates an exemplary method of depositing a nucleic acid template on a substrate. First, a silicon substrate with a size of 0.35 cm 2 is spin-coated with poly(methyl methacrylate) (PMMA) resist (Allresist AR-P672.045) and patterned using electron beam lithography (Raith Voyager, irradiated with a dose of 325 μC / cm 2 ) at a current of 0.9 nA. In this example, PMMA pores larger than 5×10 4 with a surface density of approximately 2×10 7 pores / cm 2were fabricated. Each PMMA pore exhibited a length of 2.5 μm along the x direction and a thickness of 150 nm along the y direction perpendicular to the x-z plane. The minimum and maximum values of the pore width along the z direction were 180 nm and 250 nm, respectively. The patterned PMMA layer was developed in a 1:3 mixture of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA), followed by washing with IPA and drying with nitrogen. A solution of CNT-modified DNA template nanostructures was spin-coated onto the lithographically defined pattern. Subsequently, the silicon substrate was kept in a sealed chamber for 2 hours. During this process, the DNA template nanostructures diffused into the PMMA pores. Then, the Si substrate was dried, and subsequently, only the aligned DNA template nanostructures were left on the flat Si substrate by PMMA lift-off. After DNA deposition and PMMA lift-off, more than 85% of the initial pores (about 600 pores were counted) were occupied by the DNA template nanostructures. The measured angular distribution, defined as the difference between the longitudinal axis of the DNA template nanostructures and the x direction of the substrate, was based on counting all the remaining DNA template nanostructures within 600 pores by SEM, within ±1 o was 56% and within ±7 o was 90%. The measured angular distribution combined the effects from the fabrication defects of the PMMA pores, the fluctuations during DNA placement, and the disturbances during PMMA lift-off. Notably, the angular distribution was improved when compared with a previous report on the large-scale placement of DNA-templated inorganic materials (A.M. Hung et al., Large-area spatially ordered arrays of gold nanoparticles directed by lithographically confined DNA origami, Nature Nanotech. 5, 121 - 126 (2010)).

[0072]

[0123] Both the length of the DNA template nanostructures and the aspect ratio of the PMMA pores can affect the angular distribution. Longer DNA template nanostructures (length > 1 μm) have ao ±11 o ) has a narrower angular distribution (0 o ±3.4 o ) was presented. In addition, PMMA pores having a higher length-to-width aspect ratio (e.g., 10 or more) provided better orientation controllability than those with a lower aspect ratio (i.e., 1 to 3 or less). Therefore, in order to further improve the angular distribution, longer DNA template nanostructures and a higher length-to-width aspect ratio of PMMA pores are beneficial.

[0073]

[0124] In some embodiments, the nucleic acid template can be deposited directly on the substrate without forming a patterned alignment layer having a plurality of pores on the substrate. In one example, a 230 nm thick PMMA layer was spin-coated on a Si wafer (having 300 nm thick SiO2 on top), and the fine alignment marker pattern was written using a Raith Voyager apparatus (current 9 nA and dose 780 μC / cm 2 ). The alignment marker pattern was developed in a 1:3 mixture of MIBK and IPA. A titanium / gold laminated thin film (5 nm thick titanium and 45 nm thick gold) was deposited using a DE400e beam evaporator. Lift-off was performed in acetone at room temperature without ultrasonic treatment, followed by ethanol washing. The sample was dried with nitrogen. Then, 9 μL of a solution of aggregated CNT-modified DNA template nanostructures (i.e., DNA template nanostructures having CNTs in the pore region) was dip-coated onto the oxygen plasma-cleaned Si wafer and then incubated at room temperature for 1 hour. Thereafter, the residual solution was blown off with nitrogen. The Si wafer was sequentially washed with 75% ethanol, 95% ethanol, and 99% ethanol, and then air-dried. The positions of the CNT-modified DNA template nanostructures were recorded relative to the alignment markers.

[0074]

[0125] Further details regarding the method of depositing nucleic acid template nanostructures on a substrate can be found in PCT Application No. PCT / CN2020 / 082377, titled "method for depositing template nanostructures on a substrate and nanostructure arrays", filed on March 31, 2020, and PCT Application No. PCT / CN2020 / 082777, titled "method for depositing template nanostructures on a substrate and nanostructure arrays", filed on April 1, 2020, the entire content of which is incorporated herein by reference.

[0075]

[0126] In step 350, at least one type of fixing structure is formed on the substrate. The at least one type of fixing structure intersects all or part of the at least one type of nucleic acid template nanostructure to fix all or part of the at least one type of nucleic acid template nanostructure to the substrate.

[0076]

[0127] Some details regarding the method of forming at least one type of fixing structure on the substrate can be found in step 130 of method 100 described above, and thus will not be elaborated herein.

[0077]

[0128] In one example, a 230 nm thick PMMA layer was spin-coated on a CNT-deposited Si wafer. The fixed structure pattern was written using a Raith Voyager device (current 400 pA and dose 750 μC / cm 2 ). The fixed structure pattern was developed in a 1:3 mixture of MIBK and IPA. A laminated thin film of 5 nm thick titanium and 60 nm thick gold was deposited using a DE400e beam evaporator. Lift-off was performed in acetone at room temperature without sonication, followed by ethanol washing. The sample was then dried with nitrogen.

[0078]

[0129] Figure 9 illustrates an example of a nucleic acid template nanostructure after a fixing structure is formed on a substrate. In this embodiment, two types of fixing structures are formed on the nucleic acid template nanostructure, and both ends of each CNT are fixed by the two types of fixing structures. Therefore, the fixing structure provides an anchor to the substrate for the nano part. In some other embodiments, for example, depending on the length, size, or shape of the nano part, three or more types of fixing structures can be formed on the nucleic acid template nanostructure. In some embodiments, the fixing structures can be formed at intervals from each other, leaving a section of the nano part that is not covered by a solid structure for the subsequent formation of other structures or other components. In some embodiments, the fixing structure may be in a shape that extends perpendicular to the length direction of the nano part, such as the solid structure shown in Figure 9. In some other embodiments, the fixing structure may be of any other shape (e.g., circular, loop, etc.) that is adapted to fix the nano part to the substrate.

[0079]

[0130] In step 360, at least a part of the nucleic acid template nanostructure is removed.

[0131] In some embodiments, the removed part of the nucleic acid template nanostructure is not covered by at least one type of fixing structure before the removing step. In some other embodiments, all of the nucleic acid template nanostructures are removed.

[0080]

[0132] In some embodiments, at least a part of the nucleic acid template nanostructure is removed by a washing process, a thermal annealing process, or a chemical oxidation process. For example, the substrate is continuously washed with water and H2O2 (5%) to remove the nucleic acid template nanostructure. Figure 10 illustrates an example of the substrate after the nucleic acid template nanostructure is removed. In this embodiment, the nucleic acid template nanostructure is substantially removed from the surface of the substrate. Generally, the step of removing the nucleic acid template nanostructure can further reduce the salt residues left on the substrate and the CNT.

[0081]

[0133] By using the above method 300, a nano-partial array, e.g., a CNT array, can be formed on a substrate in a desired arrangement, and contaminants can be excluded without degrading the CNT alignment. Accordingly, high-performance ultra-scale devices, e.g., FET devices, can be fabricated based on these nano-partial arrays.

[0082]

[0134] FIG. 11 illustrates a flowchart of a method 1100 for forming an FET device according to an embodiment of the present application. The method 1100 can include the following steps 1110-1180.

[0083]

[0135] In step 1110, a nucleic acid template nanostructure is formed in a template solution.

[0136] In some embodiments, each nucleic acid template nanostructure can include at least one pore region and a non-pore region outside the at least one pore region. In other embodiments, those skilled in the art should recognize that the nucleic acid template nanostructure can have a planar or other non-planar shape.

[0084]

[0137] In step 1120, at least one type of nanowire is mixed with the template solution to assemble at least one type of nanowire onto the nucleic acid template nanostructure.

[0138] In some embodiments, when the nucleic acid template nanostructure includes at least one pore region and a non-pore region outside the at least one pore region, at least one type of nanowire is assembled into at least one pore region of the nucleic acid template nanostructure.

[0085]

[0139] In other embodiments, when the nucleic acid template nanostructure has a planar shape, at least one type of nanowire is assembled onto a part of the plane where the nucleic acid handle is formed.

[0140] It can be recognized that a template solution containing a modified nucleic acid template nanostructure (plural possible) or any other template nanostructure can be prepared in advance.

[0086]

[0141] In step 1130, the nucleic acid template nanostructure is etched in the non-porous region.

[0142] In step 1140, at least one kind of nucleic acid template nanostructure is deposited on the substrate by bringing the template solution into contact with the substrate.

[0087]

[0143] In step 1150, at least one kind of fixing structure is formed on the substrate, and at least one kind of fixing structure intersects all or part of at least one kind of nanowire to fix all or part of at least one kind of nanowire to the substrate.

[0088]

[0144] In step 1160, at least a part of at least one kind of nucleic acid template nanostructure not covered by the fixing structure is removed.

[0145] Steps 1110 to 1160 of method 1100 are the same as steps 310 to 360 of method 300, and thus are not described in detail herein.

[0089]

[0146] In step 1170, the source contact and the drain contact are formed on the substrate along at least one kind of nanowire.

[0147] In some embodiments, the source contact and the drain contact can include any suitable contact metal including, but not limited to, gold (Au), titanium (Ti), palladium (Pd), scandium (Sc), etc., using standard deposition methods such as evaporation, sputtering, etc.

[0090]

[0148] FIG. 12(a) illustrates an example of an element after the step of forming source and drain contacts. In this embodiment, two types of fixed structures are formed on the CNT, and the source and drain contacts are formed between two adjacent types of fixed structures. As shown, the CNT can be fixed to the cross-section between the fixed structures that intersect the source and drain contacts by the two types of fixed structures, but some ends of the CNT that protrude outside the fixed structures cannot be used for the FET structure.

[0091]

[0149] The source and drain contacts can be formed using conventional metal formation methods or poly formation methods. In one example, a 230 nm thick PMMA layer was spin-coated onto the CNT array, followed by writing the source electrode pattern and the drain electrode pattern with a Raith Voyager device (current 400 pA and dose 750 μC / cm 2 ). The source electrode pattern and the drain electrode pattern were developed in a 1:3 mixture of MIBK and IPA. A laminated thin film of 0.5 nm thick titanium, 30 nm thick palladium, and 40 nm thick gold was deposited using a DE400e beam evaporation device. Lift-off was performed in acetone at room temperature without ultrasonic treatment, followed by ethanol washing. The sample was then dried with nitrogen.

[0092]

[0150] In step 1180, a gate structure is formed between the source contact and the drain contact and along at least one type of nanowire.

[0151] In some embodiments, the gate structure includes a gate derivative and a gate contact. The gate derivative can include any suitable derivative including, but not limited to, SiO2, Al2O3, HfO2, Si3N4, Y2O3, etc., formed using standard deposition methods such as evaporation, sputtering, etc.

[0093]

[0152] Figures 12(b) and 12(c) illustrate an example of the device after forming the gate structure. In this embodiment, a 230 nm thick PMMA alignment layer was spin-coated on the Si wafer, followed by writing the channel pattern with a Raith Voyager device (current 400 pA and dose 750 μC / cm 2 ). First, a 1 nm thick yttrium metal thin film was deposited using a DE400e beam evaporation apparatus. Lift-off was performed in acetone at 70 °C. Next, the yttrium thin film was oxidized in air at 250 °C. Then, a 230 nm thick PMMA layer was spin-coated on the Y2O3-coated Si wafer, followed by writing the gate electrode pattern with a Raith Voyager device (current 400 pA and dose 750 μC / cm 2 ). The gate electrode pattern was developed in a 1:3 mixture of MIBK and IPA. Next, 8 nm thick HfO2 was deposited at 90 °C by atomic layer deposition (Beneq) to form the gate derivative. Finally, a 15 nm thick palladium thin film was deposited using a DE400e beam evaporation apparatus. Lift-off was performed in acetone at room temperature without sonication, followed by ethanol washing. Then, the sample was dried with nitrogen. Thus, a gate contact can be formed.

[0094]

[0153] In some embodiments, conductor pads connected to the source contact, drain contacts, and gate structures are further formed. These conductor pads can be used for electrical measurements of the fabricated CNTFET.

[0095]

[0154] In one example, a 230 nm thick PMMA layer was first spin-coated on the sample. The conductor pad pattern was written with a Raith Voyager device (current 9 nA and dose 750 μC / cm 2) was used for exposure. The conductor pad pattern was developed in a 1:3 mixture of MIBK and IPA and then dried with nitrogen. A laminated thin film of 5 nm thick titanium and 70 nm thick gold was deposited using a DE400e beam evaporator. Lift-off was performed at room temperature in acetone without sonication, followed by ethanol washing. The sample was then dried with nitrogen.

[0096]

[0155] In some embodiments, after the gate structure was formed, the fixed structure was removed from the surface of the substrate.

[0156] In some embodiments, a single CNT has one source contact, one drain contact, and one gate structure to form a single-channel CNTFET. An example of a single-channel CNTFET is illustrated in FIGS. 13(a) and 13(b), where FIG. 13(a) is a side view of the single-channel CNTFET and FIG. 13(b) is a top view of the single-channel CNTFET.

[0097]

[0157] In some embodiments, two, three, four, or more CNTs having a common source contact, a common drain contact, and a common gate structure can be used to form a multi-channel CNTFET. An example of a multi-channel CNTFET is illustrated in FIGS. 14(a) and 14(b), where FIG. 14(a) is a side view of the multi-channel CNTFET and FIG. 14(b) is a top view of the multi-channel CNTFET.

[0098]

[0158] Certain electrical measurements were performed at room temperature in a probe station connected to a Keithley 4200SCS semiconductor device analyzer on samples of CNTFETs formed using the above method. FIGS. 15(a) and 15(b) show the I ds -V gs curves and g m -V gsDescribe the curve. As shown in Fig. 15(a), a single-channel CNTFET (channel length 200 nm) exhibits an on-current of 10 μA / CNT at the thermionic limit of the subthreshold swing (i.e., 60 mV / dec) (V ds -0.5 V). As shown in Fig. 15(b), at V ds -0.5 V, a multi-channel CNTFET (channel length 200 nm, pitch between CNTs 24 nm) exhibits V th -0.26 V, I on / I off 10 6 , an on-current density of 154 μA / μm (V gs -1.5 V), and a subthreshold swing of 100 mV / dec. The g m value and the G on value were 0.37 mS / μm and 0.31 mS / μm, respectively.

[0099]

[0159]

Example

[0100]

[0160] An example of a step for constructing a high-performance transistor in which the method according to an embodiment of the present application can be used.

[0161] In a devised high-performance and energy-efficient field-effect transistor (FET) (References 1, 2), equally spaced small pitches (spacing between two adjacent channels within an individual FET) semiconductor channels are often required. A smaller channel pitch results in higher integration density and higher on-state performance, but is accompanied by an increased risk of destructive short-range screening and electrostatic interactions in low-dimensional semiconductors such as carbon nanotubes (CNTs) (Reference 3); on the other hand, equally spaced alignment minimizes channel disorders that affect the switching between on / off states (Reference 4). Therefore, although a high-density CNT thin film exhibits on-state performance equivalent to that of a Si FET (References 5, 6), reduced gate modulation and increased subthreshold swing (References 3, 5) are observed due to array disorders.

[0101]

[0162] Biomolecules such as DNA (References 7 and 8) can be used to organize CNTs in a given array (References 9 - 11). Based on the spatially shielded integration of nanotube electrons (SHINE), biofabrication further tunes the equidistant channel pitch beyond the feasibility of lithography (Reference 12). However, none of the bio - templated CNTFETs (References 12 - 14) exhibited performance equivalent to those constructed from lithography (Reference 15) or thin - film approaches (References 3, 5, 6, 16 - 18). On the other hand, the wide orientation distribution (Reference 19) in the surface placement of bio - templated materials hinders their large - scale alignment.

[0102]

[0163] Here, it is shown that small regions of nanometer - precision biomolecular aggregates can be integrated into large arrays of solid - state high - performance electronic devices. The inventors used an array of CNTs of parallel semiconductors assembled via SHINE as a model device (Reference 12). At the FET channel interface, lower on - state performance induced by high - concentration DNA / metal ions was observed. The inventors used a post - fixation washing approach to remove contaminants without degrading the CNT alignment. Based on a uniform CNT - to - CNT pitch and a clean channel interface, the inventors constructed a solid - state multi - channel PMOS (p - channel metal - oxide - semiconductor) CNTFET that simultaneously exhibits high on - state performance and fast on / off switching. The inventors used lithographically defined polymethyl methacrylate (PMMA) pores to spatially confine the placement of CNT - modified DNA templates and demonstrated an aligned array with a given geometry over a substrate area of 0.35 cm 2 By fabricating high - performance ultra - scale devices at the biology - electronics interface, various post - Si applications become possible, such as multiplexed biomolecular sensors (Reference 20) and 3D FETs with nanometer - to - centimeter array scalability.

[0103]

[0164] The inventors assembled DNA-templated CNT arrays using DNA-based SHINE (Reference 12). The inventors applied a post-fixation washing approach (Figure 16A) to remove the DNA templates. Starting from the surface-deposited DNA-templated CNT arrays, both ends of the DNA-templated CNT arrays were first fixed onto the Si wafer with the attached metal rods (the first step in Figure 16A). The DNA templates and the high-concentration metal salts (1 - 2 M) within the DNA helices were gently removed by sequential washing with water and low-concentration H2O2 (the second step in Figure 16A and Figure 22). The CNT-to-CNT pitch and alignment quality of the assembled CNTs did not deteriorate during washing (Figure 16B, Figure 20, and Figure 21).

[0104]

[0165] To explore the influence of single-stranded DNA (ssDNA) at the channel interface, the inventors first fabricated source and drain electrodes on the washed CNT arrays (Figure 16C, left). Next, ssDNA was exclusively introduced into a pre-defined channel range (the first step in Figure 16C, channel length 200 nm). Finally, HfO2 gate derivatives and Pd gate electrodes were sequentially fabricated (the second and third steps in Figure 16C, and Figure 23).

[0105]

[0166] Of the 19 FETs, the inventors considered that 63% (12 out of 19) showed typical gate modulation (I 3 exceeding 10 on / I off , Figure 24). The other 7 devices exhibited I on / I off < 5, which was caused by the presence of metallic CNTs within the array. At a source-drain bias (V ds ) of -0.5 V, one typical multi-channel DNA-containing CNTFET (Figure 16D) had a threshold voltage (V th ) of approximately -2 V, an on-current density of 50 μA / μm (normalized to the CNT-to-CNT pitch) at a gate-source bias (V gs ) of -3 V, a subthreshold swing of 146 mV / decade, and a peak transconductance (gm ) 23 μS / μm, and an on-state conductance (G on ) of 0.10 mS / μm was exhibited. Statistical data for all 12 operating FETs showed a V th distribution of -2 ± 0.10 V, an on-current density of 4 - 50 μA / μm, and a subthreshold swing of 164 ± 44 mV / decade (Figure 24A). The transport performance was stable during repeated measurements (Figure 24C).

[0106]

[0167] The inventors annealed the above DNA-containing FETs at 400 °C for 30 minutes in vacuum to pyrolyze the ssDNA (reference 22), and then characterized the transport performance again. Compared with the unannealed samples, thermal annealing (Figures 16D, 23, and 31) slightly shifted the average V th by approximately 0.35 V (V th after annealing was -1.65 ± 0.17 V), and increased the average subthreshold swing by approximately 70 mV / decade (subthreshold swing after annealing was 230 ± 112 mV / decade). g m and G on including other on-state performance, as well as the FET morphology, did not change substantially after annealing.

[0107]

[0168] To fabricate high-performance CNTFETs from biotemplates, the inventor deposited composite gate derivatives (Y2O3 and HfO2) in the cleaned channel region instead of introducing ssDNA (Figs. 17, A and B, Fig. 14, and Fig. 26). 54% (6 out of 11) of all the fabricated FETs showed gate modulation (Fig. 27). Among the 11 FETs, the other 5 FETs contained at least one metal CNT in the channel (Fig. 30). To compare the transport performance, another 9 in-operation single-channel DNA-free CNTFETs were also constructed using an ideal fabrication method (Fig. 13). The single-channel CNTFET with the highest on-state performance (channel length of about 200 nm) had a subthreshold swing at the thermionic limit (i.e., 60 mV / decade, Figs. 17C and 25) and an on-current of 10 μA / CNT (V ds -0.5V).

[0108]

[0169] V ds At V th -0.26V, the multi-channel DNA-free CNTFET with the highest on-state performance (channel length of about 200 nm, pitch between CNTs of 24 nm) (Figs. 17D and 28) showed V gs -1.5V, an on-current density of 154 μA / μm (V m -1.5V), and a subthreshold swing of 100 mV / decade. The g on value and the G m value were 0.37 mS / μm and 0.31 mS / μm, respectively. The noise in the g gs -V ds curve can arise from thermal noise and disorder and scattering within the composite gate structure. At V m -0.8V, with g

[0109]

[0170] When the channel length was adjusted to 100 nm, the on-current density was 300 μA / μm (V ds -0.5V and Vgs -1.5 V), and a subthreshold swing of 160 mV / decade was obtained (FIG. 29). Thus, both the G on value and the g m value were enhanced up to 0.6 mS / μm. The DNA-free CNTFET exhibited an I ds equivalent to that of thin-film FETs from aligned chemical vapor deposition (CVD)-grown CNT arrays even at a CNT density lower than 60% (about 40 CNT / μm as opposed to higher than 100 CNT / μm (refs. 28, 29)) (refs. 28, 29). The effective removal of contaminants, such as DNA and metal ions, as well as the shorter channel length contributed to the high I ds . Notably, previous studies directly immobilized fixed CNTs at the source and drain electrodes (ref. 13), but the on-state performance (g m and G on ) decreased by a factor of 10 because the contamination was not completely removed from the electrode contact regions.

[0110]

[0171] The inventors benchmarked the current transport performance (i.e., g ds and subthreshold swing) of conventional thin-film FETs using CVD-grown or polymer-coated CNTs at a similar channel length and V m (i.e., -0.5 V) (refs. 3, 5, 16 - 18, 23 - 27) (FIGS. 17E, 32, and 33). Both high on-state performance (g m of approximately 0.37 mS / μm) and fast on / off switching (subthreshold swing of approximately 100 mV / decade) were simultaneously obtained within the same solid-state DNA-templated FET; while thin-film CNTFETs with a similar subthreshold swing (about 100 mV / decade) exhibited a g m more than 50% smaller (FIG. 32).

[0111]

[0172] Furthermore, the subthreshold swing difference between the multi-channel (average value 103 mV / decade) and the single-channel CNTFET (average value 86 mV / decade in FIG. 25) decreased to 17 mV / decade. According to the proposal of theoretical simulation, under an ideal gate structure, the unequal diameter of CNTs (Reference 6) and the disorder of alignment (including intersecting CNTs) (Reference 5) increase the subthreshold swing (Reference 4). The inventors observed a wide diameter distribution of DNA-coated CNTs in the AFM image (FIG. 19) and the TEM image (FIG. 18). Therefore, the small subthreshold swing difference described above suggests effective gate modulation and equidistant CNT alignment (Reference 12) using SHINE, that is, the absence of intersecting CNTs / CNTs forming bundles within the channel range.

[0112]

[0173] Statistical data for the multi-channel DNA-free FET during all operations were V th -0.32 ± 0.27 V, on-current density 25 - 154 μA / μm (V ds -0.5 V and V gs -1.5 V), and a subthreshold swing of 103 ± 30 mV / decade. Various amounts of thin CNTs (i.e., diameter < 1 nm) within the FET resulted in a wide distribution of on-current density. Lower CNT conductances are often observed for those with diameters exceeding 1.4 nm than for those with diameters less than 1.4 nm because the Schottky barrier and the bandgap increase with thinner CNT diameters (References 30, 31).

[0113]

[0174] When the transport performance difference between the DNA-containing FET and the DNA-free FET is compared (FIG. 31), a largely negatively shifted V th (-2 V vs. -0.32 V), a higher I gs at positive V ds (often 10 - 200 nA / μm vs. 0.1 - 10 nA / μm), and a g m(4 to 50 μS / μm vs. 70 to 370 μS / μm) was observed. Therefore, the high-concentration ssDNA in the multi-channel FET deteriorated the transport performance. Due to the presence of insoluble annealing products, such as metal phosphates, thermal annealing did not completely remove its influence (Reference 22).

[0114]

[0175] When the CNT-modified DNA template was deposited on a flat Si wafer, the random orientation of the DNA template was formed by unconstrained surface rotation. The inventor solved this problem by using 3D polymer pores to retain the surface orientation during large-area placement. The inventor first assembled a fixed-width CNT array (Figure 34) with a predetermined CNT pitch of 16 nm (2 CNTs per array). Next, in a typical 500 μm × 500 μm light field of the PMMA-coated Si substrate (more than 20 light fields of the substrate), the inventor fabricated densely aligned, grooved, parapet-like PMMA pores (pore density of about 2 × 10 2 pores / cm 7 ) with the minimum and maximum designed widths along the z-direction being 180 nm and 250 nm, respectively. 2 ) were fabricated. The minimum and maximum designed widths along the z-direction were 180 nm and 250 nm, respectively.

[0115]

[0176] After DNA deposition and PMMA lift-off (Figure 8(B)), >85% of the initial pores (about 600 pores were counted) were occupied by the DNA templates (Figure 8(B), Figure 25). For all of the residual DNA templates within the 600 pore sites, the measured angular distribution, defined as the difference between the longitudinal axis of the DNA template and the x-direction of the substrate by scanning electron microscopy (SEM)-based counting, was such that 56% was within ±1°, and 90% was within ±7° (Figure 8(B)). This value included an improvable influence from PMMA pore site fabrication defects, fluctuations during DNA placement, and any perturbations from PMMA lift-off. Notably, the angular distribution was also improved compared to the previous large-scale placement of the DNA templated material (Reference 19). The CNTs were not visualized by SEM because they were embedded within the DNA trenches and shielded from the SEM detector by the DNA helices.

[0116]

[0177] Both the length of the DNA template and the aspect ratio of the PMMA pores affected the angular distribution. Longer DNA templates (length >1 μm) exhibited a narrower angular distribution (0° ± 3.4° in Figure 8(B)) than those of shorter DNA templates (length <500 nm in Figure 8(B), 1° ± 11°). Additionally, PMMA pores with a higher length-to-width aspect ratio (i.e., 10 in Figure 8(B)) resulted in better orientation controllability than those with a lower aspect ratio (i.e., 1 in Figure 36). Therefore, for further improving the angular distribution, longer DNA templates and a higher length-to-width aspect ratio of the PMMA pores were beneficial. Since the PMMA pores were wider than the DNA templates, up to three DNA templates, as well as offsets of the DNA templates along the x- and z-directions, were observed within some of the PMMA pores. Notably, the DNA templates did not completely cover the PMMA pores, even in a saturated DNA solution.

[0117]

[0178] A two-dimensional hydrophilic surface pattern having the same shape and dimensions as the DNA structure can be induced to the orientation of the deposited DNA structure (Reference 32). However, it is difficult to design a pattern that can correspond to DNA templates having various lengths. In contrast, effective spatial confinement mainly depends on the length of the DNA template and the aspect ratio of the PMMA pores, and is applicable to irregular template lengths. Therefore, anisotropic bio-templated CNT arrays can be aligned along the longitudinal direction of the pores (Figure 37).

[0118]

[0179] To further enhance the on-state performance, it may be beneficial to adjust the pitch between CNTs to less than 10 nm. However, the enhanced electrostatic interaction at a 2 nm CNT pitch can affect the on / off switching. Therefore, the correlation between the CNT pitch and the performance metrics of CNTFETs needs to be verified. By combining conventional lithography-based large-area fabrication and the induced assembly of block copolymers, biomolecular assemblies could provide an example of highly resolved programmable electronics over a large area. Hybrid electron-biological devices can also integrate electrical stimulation and biological input / output and can fabricate ultra-scale sensors or bioactuators.

[0119]

[0180] Materials and Experimental Methods for Examples

[0181] 1. Atomic Force Microscopy (AFM)

[0182] 7 μL of the as-prepared CNT-modified DNA template solution was deposited on a silicon chip with a size of 1 cm 2 and subsequently washed stepwise with 50% ethanol, 95% ethanol, and 99.5% ethanol. The samples were imaged in tapping mode with a multimode SPM (Vecco).

[0120]

[0183] 2. Scanning Electron Microscopy (SEM)

[0184] 7 μL of the as-prepared CNT-modified DNA template solution was deposited on a silicon chip with a size of 1 cm 2It was attached onto a silicon chip of the size, and subsequently washed stepwise with 50% ethanol, 95% ethanol, and 99.5% ethanol. The dried silicon chip was imaged with a HITACHI S-4800 apparatus operated at 5 kV under high vacuum.

[0121]

[0185] 3. Transmission Electron Microscopy (TEM)

[0186] 0.6 μL of the as-prepared (without purification) CNT-modified DNA template was diluted in 5 μL of water and adsorbed onto a glow-discharge carbon-coated TEM grid for 4 minutes. Subsequently, the residual solution was wiped off, and then negatively stained (for 7 seconds) using 6 μL of a 2% aqueous uranyl formate solution and quickly washed with water. Imaging was performed using a JEOL 2100 operated at 120 kV.

[0122]

[0187] 4. Centimeter-scale Oriented Arrangement

[0188] 0.35 cm 2 A silicon substrate of the size was first spin-coated with poly(methyl methacrylate) (PMMA) resist (Allresist AR-P672.045) and patterned using electron beam lithography (Raith Voyager, irradiated with a dose of 325 μC / cm 2 ) at a current of 0.9 nA. The patterned PMMA layer was developed in a 1:3 mixture of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA), subsequently washed with IPA, and dried with nitrogen. The CNT-modified DNA template solution was dip-coated onto the lithographically defined pattern. Then, the silicon substrate was kept in a sealed chamber for 2 hours. During this process, the DNA template diffused into the PMMA pores. Then, the Si substrate was dried, and then the PMMA was lifted off, leaving only the DNA template aligned with the flat Si substrate. Finally, the inventor imaged the sample with SEM.

[0123]

[0189] 5. DNA Template Removal

[0190] The inventor applied the following method to remove the collective DNA template while maintaining the CNT alignment: (1) fabricating alignment markers on the Si wafer by electron beam lithography; (2) depositing the CNT-modified DNA template on the Si wafer and recording the position with low magnification SEM; (3) fabricating a metal bar to fix the collective CNT array on the Si wafer; and (4) removing the DNA template by successive washing with water and H2O2. The inventor used length-selected CNTs (semiconductor purity > 95%) from NIST, and the length range was 300 - 1000 nm.

[0124]

[0191] Alignment marker:

[0192] A 230 nm thick PMMA layer was spin-coated on a Si wafer (having 300 nm thick SiO2 on the upper surface), and a fine alignment marker pattern was written using a Raith Voyager apparatus (current 9 nA and dose 780 uC / cm 2 ). The alignment marker pattern was developed in a 1:3 mixture of MIBK and IPA. A titanium / gold laminated thin film (5 nm thick titanium and 45 nm thick gold) was deposited using a DE400e beam evaporation apparatus. Lift-off was performed in acetone at room temperature without ultrasonic treatment, followed by ethanol washing. The sample was dried with nitrogen.

[0125]

[0193] CNT deposition and recording:

[0194] 9 uL of a solution of the collective CNT-modified DNA template was dip-coated on an oxygen plasma-cleaned Si wafer and then incubated at room temperature for 1 hour. Subsequently, the residual solution was blown off with nitrogen. The Si wafer was successively washed with 75% ethanol, 95% ethanol, and 99% ethanol, followed by air drying. Then, the Si wafer was imaged with low magnification SEM (operated at 1 kV). The position of the CNT-modified DNA template was recorded relative to the alignment marker.

[0126]

[0195] CNT Fixation and DNA Removal:

[0196] A 230 - nm - thick PMMA layer was spin - coated onto the CNT - deposited Si wafer. The metal bar pattern was written using a Raith Voyager device (current 400 pA and dose 750 μC / cm 2 ). The metal bar pattern was developed in a 1:3 mixture of MIBK and IPA. A laminated thin film of 5 - nm - thick titanium and 60 - nm - thick gold was deposited using a DE400e beam evaporation device. Lift - off was performed in acetone at room temperature without ultrasonic treatment, followed by ethanol washing. The sample was dried with nitrogen. Then, DNA removal was carried out by sequential washing with water and H2O2 (5%).

[0127]

[0197] 6. FET Structure

[0198] For the FET structure, the inventor fabricated source electrodes / drain electrodes / gate electrodes on the collective CNT array using electron beam lithography and constructed electrical conductor pads.

[0128]

[0199] Source Electrodes / Drain Electrodes:

[0200] A 230 - nm - thick PMMA layer was spin - coated onto the clean CNT array, and then the source electrode pattern and the drain electrode pattern were written with a Raith Voyager device (current 400 pA and dose 750 μC / cm 2 ). The source electrode pattern and the drain electrode pattern were developed in a 1:3 mixture of MIBK and IPA. A laminated thin film of 0.5 - nm - thick titanium, 30 - nm - thick palladium, and 40 - nm - thick gold was deposited using a DE400e beam evaporation device. Lift - off was performed in acetone at room temperature without ultrasonic treatment, followed by ethanol washing. The sample was dried with nitrogen.

[0129]

[0201] Gate Electrodes:

[0202] Next, a 230 nm thick PMMA layer was spin-coated onto the Si wafer, followed by writing the channel pattern with a Raith Voyager apparatus (current 400 pA and dose 750 uC / cm 2 ). A 1 nm thick yttrium metal thin film was first deposited using a DE400e beam evaporation apparatus. Lift-off was performed in acetone at 70 °C. Next, the yttrium thin film was oxidized in air at 250 °C.

[0130]

[0203] Next, a 230 nm thick PMMA layer was spin-coated onto the Y2O3-coated Si wafer, followed by writing the gate electrode pattern with a Raith Voyager apparatus (current 400 pA and dose 750 uC / cm 2 ). The gate electrode pattern was developed in a 1:3 mixture of MIBK and IPA. Next, 8 nm thick HfO2 was deposited at 90 °C by atomic layer deposition (Beneq). Finally, a 15 nm thick palladium thin film was deposited using a DE400e beam evaporation apparatus. Lift-off was performed in acetone at room temperature without sonication, followed by ethanol washing. The sample was dried with nitrogen.

[0131]

[0204] Conductor pads:

[0205] To fabricate large electrical conductor pads connected to the electrodes, a 230 nm thick PMMA layer was first spin-coated onto the sample. The conductor pad pattern was exposed using a Raith Voyager apparatus (current 9 nA and dose 750 uC / cm 2 ). The conductor pad pattern was developed in a 1:3 mixture of MIBK and IPA and then dried with nitrogen. A laminated thin film of 5 nm thick titanium and 70 nm thick gold was deposited using a DE400e beam evaporation apparatus. Lift-off was performed in acetone at room temperature without sonication, followed by ethanol washing. The sample was dried with nitrogen.

[0132]

[0206] Electrical measurement of CNTFET:

[0207] Electrical measurements of the fabricated CNTFETs were performed at room temperature in a probe station connected to a Keithley 4200SCS semiconductor device analyzer.

[0133]

[0208] 7. Step of introducing ssDNA at the channel interface

[0209] After fabricating the source electrode / drain electrode, the inventors applied the following steps to introduce ssDNA at the channel interface and thus construct the gate derivative: (1) A 230 nm thick PMMA layer was spin-coated onto the wafer, followed by writing the gate electrode pattern with a Raith Voyager device (current 400 pA and dose 750 uC / cm 2 ). The gate electrode pattern was developed in a 1:3 mixture of MIBK and IPA; (2) 10 uL (1 uM) of the L1 solution was dip-coated onto the fixed CNT array and incubated at room temperature for 1.5 hours; (3) The residual solution was blown off with nitrogen, followed by sequential washing with 75% ethanol, 95% ethanol, and 99% ethanol; (4) A 9 nm thick HfO2 medium was grown at 90 °C by atomic layer deposition (Savannah) within the developed pattern. A 15 nm thick palladium thin film was deposited using a DE400e beam evaporator. Lift-off was performed at room temperature in acetone without ultrasonic treatment, followed by ethanol washing. The sample was dried with nitrogen.

[0134]

[0210] Thereafter, conductor pads and electrical measurements were performed using the same approach as described above in the "FET structure" section.

[0211] Further optimization of the FET performance of the examples

[0212] To further improve the FET performance, it is necessary to increase the on-state conductance while reducing the subthreshold swing.

[0135]

[0213] In previous reports, several strategies have been proposed for higher on-state conductance. For example, up to a gate overdrive of 6 V (V gs -Vth ) is applied, an on-current density of approximately 0.5 mA / μm was reported (L ch 100 nm) (Reference 5). However, in ultra-scale technology nodes, the supply voltage (V dd ) is typically less than 1 V, which limits the available voltage range of V gs . On the other hand, increasing the CNT density up to 500 CNT / μm and adjusting the channel length to 10 nm can also result in an on-current density of 0.8 mA / μm (gate overdrive of approximately 3 V) (Reference 6). However, also due to the strong inter-CNT screening effect at high CNT densities, high CNT density also presents challenges in enhancing the conductance per CNT. As a result, the on-state conductance per CNT is less than 2 μA / CNT, down to approximately 10% of that of a single-channel CNTFET with the same channel length (Reference 33). In addition, a subthreshold swing of approximately 500 mV / decade occurs due to the disruptive, crossing CNTs and diameter distribution at high CNT densities. Using 3D DNA nanotrenches can minimize the formation of crossing CNTs. Therefore, by exploring the correlation between the CNT pitch and the on-state conductance, an optimized CNT pitch can balance the competing requirements for higher CNT density and lower inter-CNT interaction. Along with a short-channel design, the on-state conductance of a multi-channel CNTFET will be maximized.

[0136]

[0214] Reducing the subthreshold swing to 60 - 80 mV / decade is recommended in the International Technology Roadmap for Semiconductors (Reference 1). Notably, reducing the subthreshold swing should not reduce the on-state conductance. In CNTFETs constructed from thin-film CNT arrays, a subthreshold swing of 60 mV / decade has been reported (Reference 34). However, the on-current density is as low as about 100 nA / um, not meeting the requirements for high-performance electronic devices. Based on the demonstration of the present invention, the subthreshold swing of multi-channel CNTFETs is slightly higher than that of single-channel CNTFETs. Due to the absence of cross CNTs, the small difference value (17 mV / decade) is due to the diameter distribution. Therefore, when CNTs with a uniform diameter are available, 3D DNA nanotrenches can, in principle, fabricate multi-channel CNTFETs with the same subthreshold swing as single-channel CNTFETs. Whether the subthreshold swing can be further reduced to the thermionic limit of 60 mV / decade or lower depends on the gate efficiency. For example, by using graphene contact design, single-channel CNTFETs have been demonstrated with both a subthreshold swing of less than 60 mV / decade and an on-state current of 8 uA / CNT (Reference 35). By integrating the graphene contact design into multi-channel CNTFETs, on / off switching can be enhanced more than with current metal contacts.

[0137]

[0215] Higher CNT purity is also necessary to improve the success rate of FET structures. For the designed CNTFET architecture, a semiconductor CNT purity of 95% results in a success rate of 73% for 6-channel CNTFETs and a success rate of 54% for 12-channel FETs. Considering that high-performance microprocessors can contain up to 1 billion FETs, a semiconductor CNT purity higher than 99.99999998% is necessary to ensure that all FETs are operational.

[0138]

[0216] Steps of fabricating a CNT array having the designer width and array pitch of the embodiment

[0217] In digital circuits, it is very common for individual FETs to have a spacing value larger than the semiconductor channel pitch on the outside. In Si circuits, for example, Samsung's 14nm technology node has a uniform fin pitch of 49nm (FET width is less than 250nm); on the other hand, the spacing between the two closest fins of adjacent FETs can be as large as 700nm, which is more than 13 times the fin pitch. Similar spacing differences have also been observed in Intel's 22nm Si technology node, 14nm Si technology node, and 10nm Si technology node. The larger spacing between the two closest FETs can accommodate the interconnect metal wires. Furthermore, the larger FET spacing can be adjusted according to various circuit architectures.

[0139]

[0218] Existing thin-film approaches use a post-assembly etching approach to prepare arrays having centimeter-scale designer width, array pitch, and CNT count. The continuous CNT film first covers the entire surface of the substrate. Then, post-assembly etching (by oxygen plasma) is introduced to etch away CNTs from the channel region (Figure 37A). Thus, both the array width and the array pitch could be fabricated according to the FET / circuit layout. Importantly, the array pitch is necessary to prevent floating conduction paths (see 37) and to accommodate metal contacts. The presence of CNTs under the contacts has been reported to reduce the adhesion of the metal contacts to the substrate surface (see 6). After post-assembly etching, the fully surface-covered CNT film is etched into several individual arrays having a width of approximately 50nm to several hundred nanometers according to the FET layout.

[0140]

[0219] In the comparison, the inventors demonstrate various strategies for obtaining designer widths, array pitches, and CNT counts in the manuscript (Figure 37B). 3D DNA nanotrenches are used to assemble CNT arrays onto a fixed-width 3D DNA template with a designer CNT-to-CNT pitch and CNT count. The CNT count per array could be programmed with various template widths. The assembled CNT arrays are then placed into prefabricated PMMA holes, followed by PMMA lift-off and DNA removal. Without post-assembly etching, a given array pitch is demonstrated after centimeter-scale alignment. Since the array pitch is defined by PMMA hole lithography, in principle, it can be further adjusted to less than 200 nm. Therefore, the maximum array density is approximately 105 / cm, close to that of Si fins at the 10 nm technology node (less than 3×10 5 / cm). The array widths and array pitches from the approach of the present invention are also similar to those fabricated from a post-assembly etching approach.

[0141]

[0220] References for Examples

[0142]

Table 1-1

[0143]

Table 1-2

[0144]

Table 1-3

[0145]

[0257] Note that the methods and elements disclosed in the embodiments of this application can be implemented by other means. The embodiments of the elements and methods described above are merely exemplary. In some alternative embodiments, note that the steps described in the blocks can occur in an order different from that described in the figures. For example, two consecutive blocks can actually be executed substantially simultaneously. Sometimes, they can also be implemented in the reverse order according to functionality.

[0146]

[0258] Various embodiments have been described herein with reference to the accompanying drawings. However, it is clear that various modifications and changes can be made to them without departing from the broader scope of the invention as shown in the following claims, and additional embodiments can be realized. The present invention includes the following aspects. [1] A method of forming a nanostructure array on a substrate, comprising: preparing a template solution containing template nanostructures; depositing at least one type of template nanostructure on the substrate by bringing the template solution into contact with the substrate; and forming at least one type of fixing structure on the substrate that intersects all or part of the at least one type of template nanostructure to fix all or part of the at least one type of template nanostructure to the substrate The method comprising. [2] The method according to [1], wherein the template nanostructure comprises one or more substances selected from the group consisting of nucleic acid templates, modified nucleic acid templates, protein templates, polymer templates, carbon nanotubes (CNTs), polymer-coated CNTs, CNT films, semiconductor nanoparticles, semiconductor nanowires, semiconductor nanobricks, metal nanoparticles, metal nanowires, metal nanobricks, polymer nanoparticles, polymer nanowires, polymer nanobricks, ceramic nanoparticles, ceramic nanowires, ceramic nanobricks, metal oxide nanoparticles, metal oxide nanowires, metal oxide nanobricks, fluoride nanoparticles, fluoride nanowires, and fluoride nanobricks. [3] The template nanostructure comprises a modified nucleic acid template nanostructure each modified with at least one type of nano moiety, and the step of preparing a template solution containing the template nanostructure is forming a nucleic acid template nanostructure in the template solution, each of the nucleic acid template nanostructures comprising at least one pore region and a non-pore region outside the at least one pore region; and mixing at least one type of nano moiety with the template solution to assemble the at least one type of nano moiety into at least one pore region of the nucleic acid template nanostructure The method according to [1], comprising [4] The method according to [3], wherein the nucleic acid template nanostructure comprises a deoxyribonucleic acid (DNA) nanostructure, a ribonucleic acid (RNA) nanostructure, a locked nucleic acid (LNA) nanostructure, or a peptide nucleic acid (PNA) nanostructure. [5] The method according to [3], wherein the nano part comprises one or more substances selected from the group consisting of carbon nanotubes (CNTs), polymer-coated CNTs, CNT membranes, semiconductor nanoparticles, semiconductor nanowires, semiconductor nanobricks, metal nanoparticles, metal nanowires, metal nanobricks, polymer nanoparticles, polymer nanowires, polymer nanobricks, ceramic nanoparticles, ceramic nanowires, ceramic nanobricks, metal oxide nanoparticles, metal oxide nanowires, metal oxide nanobricks, fluoride nanoparticles, fluoride nanowires, and fluoride nanobricks. [6] The method according to [3], wherein the pore region of the nucleic acid template nanostructure is formed of a first type of nucleic acid brick, and the non-pore region of the nucleic acid template nanostructure is formed of a second type of nucleic acid brick different from the first type of nucleic acid brick in the nucleic acid sequence. [7] The step of forming a nucleic acid template nanostructure in the template solution further comprises the step of forming a first type of nucleic acid handle in at least one pore region of the nucleic acid template nanostructure; The step of aggregating the at least one nano part on one of the nucleic acid template nanostructures forming a second type of nucleic acid handle on the at least one nano part; and aggregating the at least one nano part on at least one pore region of the nucleic acid template nanostructure by the interaction between the first type of nucleic acid handle and the second type of nucleic acid handle The method according to [3], further comprising [8] The method according to [7], wherein the first type of nucleic acid handle and the second type of nucleic acid handle are complementary single-stranded nucleic acid strands. [9] The step of depositing the at least one template nanostructure on the substrate forming a patterned alignment layer on the substrate, the patterned alignment layer including a plurality of pores; dip-coating the template solution containing the template nanostructure on the patterned alignment layer; and Incubating the substrate to diffuse the template nanostructure into the pores The method according to [1], comprising:

[10] The step of incubating the substrate comprises: Dehydrating or evaporating the substrate in a sealed chamber for a predetermined time The method according to [9], comprising:

[11] The method according to [1], wherein the substrate comprises a semiconductor, an oxide, a nitride, a metal, a polymer, or graphene.

[12] Further comprising the step of etching the nucleic acid template nanostructure in its non-pore region The method according to [3], further comprising:

[13] The method according to

[12] , wherein the nucleic acid template nanostructure is etched in the non-pore region by cleaving a nucleic acid strand complementary to the nucleic acid strand.

[14] The step of etching the nucleic acid template nanostructure in its non-pore region comprises: Etching the nucleic acid template nanostructure to substantially flatten its upper surface The method according to

[12] , comprising:

[15] Before the step of forming at least one fixing structure on the substrate, Forming an intermediate layer on the substrate to promote adhesion of the fixing structure to the substrate The method according to [1], further comprising:

[16] The method according to [1], wherein the at least one fixing structure has a thickness greater than 10 nm.

[17] The method according to [1], wherein the at least one fixing structure comprises a dielectric material or a metal material.

[18] Further comprising the step of removing at least a part of the at least one nucleic acid template nanostructure The method according to [3], further comprising:

[19] The method according to

[18] , wherein the removed portion of the at least one nucleic acid template nanostructure is not covered by the at least one fixing structure before the removing step.

[20] The method according to

[18] , wherein the at least a part of the nucleic acid template nanostructure is removed by a washing step, a thermal annealing step, or a chemical oxidation step.

[21] The template nanostructure comprises a first component for forming an electronic device and a second component different from the first component in terms of material, and the method comprises: Further comprising the step of removing at least a part of the second component of the template nanostructure The method according to [1], further comprising:

[22] Forming a field effect transistor (FET) array, a sensor array, a memory device array, or a quantum device array based on the at least one template nanostructure fixed to the substrate The method according to any one of [1] to

[21] , further comprising

[23] A nanostructure array including at least one kind of nanostructure on a substrate, formed by using the method according to any one of [1] to

[22] .

[24] A method of forming a field effect transistor (FET) array on a substrate, comprising: Preparing a template solution containing a nucleic acid template nanostructure, wherein the nucleic acid template nanostructure is modified with at least one kind of nanowire; Depositing at least one kind of nucleic acid template nanostructure modified with at least one kind of nanowire on the substrate by bringing the template solution into contact with the substrate; Forming at least one kind of fixing structure on the substrate that intersects with all or part of the at least one kind of nanowire, and fixing all or part of the at least one kind of nanowire to the substrate; Removing at least a part of the at least one kind of nucleic acid template nanostructure not covered by the at least one kind of fixing structure; Forming a source contact and a drain contact on the substrate along the at least one kind of nanowire; and Forming a gate structure between the source contact and the drain contact and along the at least one kind of nanowire The method comprising.

[25] The step of preparing a template solution containing a nucleic acid template nanostructure comprises Forming the nucleic acid template nanostructure in the template solution; Mixing at least one kind of nanowire with the template solution to aggregate the at least one kind of nanowire on the nucleic acid template nanostructure The method according to

[24] , comprising.

[26] The method according to

[25] , wherein each of the nucleic acid template nanostructures includes at least one pore region and a non-pore region outside the at least one pore region, and the at least one kind of nanowire is aggregated in at least one pore region of the nucleic acid template nanostructure.

[27] The method according to

[26] , further comprising etching the nucleic acid template nanostructure in its non-pore region to substantially flatten its upper surface The method according to

[26] , further comprising.

[28] Removing the at least one kind of fixing structure from the surface of the substrate The method according to

[24] , further comprising.

[29] The method according to

[24] , wherein the nanowire includes a carbon nanotube or a semiconductor nanowire.

[30] A field effect transistor (FET) device formed using the method according to any one of

[24] to

[29] .

[31] A substrate; A nucleic acid template-induced self-assembled nanowire formed on the substrate; At least one fixed structure formed on the substrate and intersecting the nanowire; A source contact and a drain contact formed on the substrate; and A gate structure formed between the source contact and the drain contact and along the nanowire A field effect transistor (FET) device comprising.

Claims

1. A method for forming a nano-structure array on a substrate, comprising: preparing a template solution containing a template nano-structure; depositing at least one type of template nano-structure on the substrate by bringing the template solution into contact with the substrate; and forming at least one type of fixing structure on the substrate that intersects all or a part of the at least one type of template nano-structure, and fixing all or the part of the at least one type of template nano-structure to the substrate ; wherein the template nano-structure includes a modified nucleic acid template nano-structure respectively modified with at least one type of nano-part, the step of preparing a template solution containing a template nano-structure includes forming a nucleic acid template nano-structure in the template solution, each of the nucleic acid template nano-structures including at least one pore region and a non-pore region outside the at least one pore region; and mixing at least one type of nano-part with the template solution to assemble the at least one type of nano-part into at least one pore region of the nucleic acid template nano-structure ; wherein the nano-part includes one or more substances selected from the group consisting of carbon nanotubes (CNTs) and polymer-coated CNTs .

2. The method according to claim 1, wherein the nucleic acid template nano-structure includes a deoxyribonucleic acid (DNA) nano-structure, a ribonucleic acid (RNA) nano-structure, a locked nucleic acid (LNA) nano-structure, or a peptide nucleic acid (PNA) nano-structure.

3. The method according to claim 1, wherein the pore region of the nucleic acid template nano-structure is formed of a first type of nucleic acid brick, and the non-pore region of the nucleic acid template nano-structure is formed of a second type of nucleic acid brick different from the first type of nucleic acid brick in the nucleic acid sequence.

4. The step of forming a nucleic acid template nano-structure in the template solution further includes forming a first type of nucleic acid handle in the at least one pore region of the nucleic acid template nano-structure; the step of assembling the at least one type of nano-part on one of the nucleic acid template nano-structures includes forming a second type of nucleic acid handle on the at least one type of nano-part; and The step of aggregating the at least one nano-portion on the at least one pore region of the nucleic acid template nanostructure by the interaction between the first-type nucleic acid handle and the second-type nucleic acid handle The method according to claim 1, further comprising this step.

5. The method according to claim 4, wherein the first-type nucleic acid handle and the second-type nucleic acid handle are complementary single-stranded nucleic acid strands.

6. The step of depositing the at least one template nanostructure on the substrate is The step of forming a patterned alignment layer on the substrate, the patterned alignment layer including a plurality of pores; The step of dip-coating the template solution containing the template nanostructure on the patterned alignment layer; and The step of incubating the substrate to diffuse the template nanostructure into the pores The method according to claim 1, including this step.

7. The step of incubating the substrate is The step of dehydrating or evaporating the substrate in a sealed chamber for a predetermined time The method according to claim 6, including this step.

8. The method according to claim 1, wherein the substrate includes a semiconductor, an oxide, a nitride, a metal, a polymer, or graphene.

9. The step of etching the nucleic acid template nanostructure in its non-pore region The method according to claim 1, further comprising this step.

10. The method according to claim 9, wherein the nucleic acid template nanostructure is etched by cutting off a nucleic acid strand complementary to the nucleic acid strand in the non-pore region.

11. The step of etching the nucleic acid template nanostructure in its non-pore region is The step of etching the nucleic acid template nanostructure to make its upper surface substantially flat The method according to claim 9, including this step.

12. Before the step of forming at least one fixing structure on the substrate, The step of forming an intermediate layer on the substrate to promote the adhesion of the fixing structure to the substrate The method according to claim 1, further comprising this step.

13. The method according to claim 1, wherein the at least one fixing structure has a thickness greater than 10 nm.

14. The method according to claim 1, wherein the at least one fixing structure includes a dielectric material or a metal material.

15. The step of removing at least a part of the at least one nucleic acid template nanostructure The method according to claim 1, further comprising this step

16. The method according to claim 15, wherein the removed part of the at least one nucleic acid template nanostructure is not covered by the at least one fixing structure before the removing step

17. The method according to claim 15, wherein at least a part of the nucleic acid template nanostructure is removed by a washing step, a thermal annealing step, or a chemical oxidation step

18. The template nanostructure includes a first component for forming an electronic device and a second component different from the first component in terms of material, and the method includes The step of removing at least a part of the second component of the template nanostructure The method according to claim 1, further comprising this step

19. The step of forming a field effect transistor (FET) array, a sensor array, a memory device array, or a quantum device array based on the at least one template nanostructure fixed to the substrate The method according to any one of claims 1 to 18, further comprising this step

20. A nanostructure array including at least one nanostructure on a substrate, formed by using the method according to any one of claims 1 to 19

21. A method of forming a field effect transistor (FET) array on a substrate, comprising The step of preparing a template solution containing a nucleic acid template nanostructure, wherein the nucleic acid template nanostructure is modified with at least one nanowire; The step of depositing at least one nucleic acid template nanostructure modified with the at least one nanowire on the substrate by bringing the template solution into contact with the substrate; The step of forming at least one fixing structure on the substrate that intersects all or part of the at least one nanowire, and fixing all or the part of the at least one nanowire to the substrate; The step of removing at least a part of the at least one nucleic acid template nanostructure not covered by the at least one fixing structure; The step of forming a source contact and a drain contact along the at least one nanowire on the substrate; and Forming a gate structure between the source contact and the drain contact and along the at least one nanowire comprising preparing a template solution containing a nucleic acid template nanostructure forming a nucleic acid template nanostructure in the template solution, each of the nucleic acid template nanostructures comprising at least one pore region and a non-pore region outside the at least one pore region; and mixing at least one type of nanowire with the template solution to assemble the at least one type of nanowire into at least one pore region of the nucleic acid template nanostructure comprising a method, wherein the at least one type of nanowire comprises one or more substances selected from the group consisting of carbon nanotubes (CNTs) and polymer-coated CNTs. **Claim 22** further comprising etching the nucleic acid template nanostructure in its non-pore region to substantially flatten its upper surface The method according to claim 21. **Claim 23** further comprising removing the at least one fixing structure from the surface of the substrate The method according to claim 21. **Claim 24** The method according to claim 21, wherein the nanowire comprises a carbon nanotube or a semiconductor nanowire. **Claim 25** A field effect transistor (FET) device formed using the method according to any one of claims 21 to 24.

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