Substrate processing apparatus and substrate processing method

Abstract

To describe a substrate processing apparatus and a substrate processing method, capable of adjusting a liquid amount of a liquid film formed on a front surface of a substrate with high accuracy.SOLUTION: A substrate processing apparatus comprises: a liquid processing part that is configured to supply a processing liquid while rotating a substrate to form a liquid film on a front surface of the substrate; a measurement part that is configured to measure a temperature of the processing liquid supplied to the substrate; a dry processing part that is configured to dry the substrate on which the liquid film is formed; and a control part. The control part is configured to execute a first processing of calculating a prediction liquid amount of the liquid film formed on the front surface of the substrate, a second processing of setting a processing condition of the liquid film formed on the front surface of the substrate to reach the prediction liquid amount calculated in the first processing, and a third processing of forming the liquid film on the front surface of the substrate in the liquid processing part on the basis of the processing condition set in the second processing, on the basis of a liquid film model expressing a relation between the temperature of the processing liquid supplied to the substrate and the liquid amount of the liquid film formed on the front surface of the substrate, and the temperature measured by the measurement part.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] A method for manufacturing a semiconductor device includes, for example, forming a stacked structure of integrated circuits on the surface of a substrate (e.g., a semiconductor wafer, etc.) by microfabricating the substrate. Microfabricating the substrate includes supplying a processing liquid to the substrate to clean and dry the substrate in order to remove minute particles and native oxide films on the surface of the substrate. Patent Document 1 discloses a technique for drying a substrate using a supercritical fluid as an example of a drying process for a substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure describes a substrate processing apparatus and a substrate processing method capable of accurately adjusting the liquid volume of a liquid film formed on the surface of a substrate.

Means for Solving the Problems

[0005] An example of a substrate processing apparatus includes a liquid processing unit configured to form a liquid film on the surface of a substrate by supplying a processing liquid while rotating the substrate, a measuring unit configured to measure the temperature of the processing liquid supplied to the substrate, a drying processing unit configured to dry the substrate on which the liquid film is formed, and a control unit. The control unit calculates a predicted liquid volume of the liquid film formed on the surface of the substrate based on a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the liquid volume of the liquid film formed on the surface of the substrate, and the temperature measured by the measuring unit (first process), sets processing conditions such that the predicted liquid volume calculated in the first process is obtained (second process), and based on the processing conditions set in the second process, executes a third process of forming a liquid film on the surface of the substrate in the liquid processing unit.

Effect of the Invention

[0006] According to the substrate processing apparatus and the substrate processing method according to the present disclosure, it is possible to accurately adjust the liquid volume of the liquid film formed on the surface of the substrate.

Brief Description of the Drawings

[0007] [Figure 1] FIG. 1 is a plan view schematically showing an example of a substrate processing system. [Figure 2] FIG. 2 is a side view schematically showing the inside of the substrate processing system of FIG. 1. [Figure 3] FIG. 3 is a side view schematically showing an example of a liquid processing unit. [Figure 4] FIG. 4 is a perspective view schematically showing an example of a drying processing unit. [Figure 5] FIG. 5 is a block diagram showing an example of a main part of the substrate processing system. [Figure 6] FIG. 6 is a schematic diagram showing an example of the hardware configuration of a controller. [Figure 7] FIG. 7 is a flowchart for explaining a procedure for generating a model. [Figure 8]FIG. 8 is a graph showing an example of the change over time in the rotation speed of the substrate and the supply flow rate of the processing liquid when a liquid film is formed on the surface of the substrate. [Figure 9] FIG. 9(a) is a graph showing an example of a liquid film model, and FIG. 10(b) is a graph showing an example of a processing condition model. [Figure 10] FIG. 10 is a flowchart illustrating a substrate processing procedure. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the following description, the same elements or elements having the same functions will be designated by the same reference numerals, and redundant explanations will be omitted. Note that in this specification, when referring to the top, bottom, right, and left of a figure, the directions of the reference numerals in the figure will be used as the reference.

[0009] [Substrate processing system] 1 and 2, a substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described. The substrate processing system 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (controller). The loading / unloading station 2 and the processing station 3 may be aligned in a horizontal line, for example.

[0010] The substrate W may be disk-shaped or may be a non-circular plate-shaped such as a polygon. The substrate W may have a cutout portion cut out of a portion. The cutout portion may be, for example, a notch (a U-shaped, V-shaped groove, or the like) or a linear portion extending linearly (so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or any other type of substrate. The diameter of the substrate W may be, for example, approximately 200 mm to 450 mm.

[0011] The loading / unloading station 2 includes a mounting section 4, a loading / unloading section 5, and a shelf unit 6. The mounting section 4 includes a plurality of mounting tables (not shown) arranged in the width direction (the vertical direction in FIG. 1). Each mounting table is configured to be able to mount a carrier 7 (storage container). The carrier 7 is configured to store at least one substrate W in a sealed state. The carrier 7 includes an opening / closing door (not shown) for loading and unloading the substrate W.

[0012] The loading / unloading section 5 is disposed adjacent to the mounting section 4 in the direction in which the loading / unloading stations 2 and the processing stations 3 are lined up (the left-right direction in FIG. 1). The loading / unloading section 5 includes an opening / closing door (not shown) provided for the mounting section 4. When the carrier 7 is placed on the mounting section 4, the opening / closing door of the carrier 7 and the opening / closing door of the loading / unloading section 5 are both opened, thereby connecting the inside of the loading / unloading section 5 and the inside of the carrier 7.

[0013] The loading / unloading section 5 incorporates a transport arm A1 and a shelf unit 6. The transport arm A1 is configured to be able to move horizontally in the width direction of the loading / unloading section 5 (the vertical direction in FIG. 1), move up and down in the vertical direction, and pivot about a vertical axis. The transport arm A1 is configured to take out a substrate W from a carrier 7 and pass it to the shelf unit 6, and also to receive a substrate W from the shelf unit 6 and return it to the carrier 7. The shelf unit 6 is located near the processing station 3, and is configured to act as an intermediary for the transfer of substrates W between the loading / unloading section 5 and the processing station 3.

[0014] The processing station 3 includes a transfer unit 8 and a plurality of substrate processing units U (substrate processing apparatuses). The transfer unit 8 extends horizontally, for example, in the direction in which the loading / unloading station 2 and the processing station 3 are arranged (the left-right direction in FIG. 1). The transfer unit 8 incorporates a transfer arm A2. The transfer arm A2 is configured to be capable of horizontal movement in the longitudinal direction of the transfer unit 8 (the left-right direction in FIG. 1), vertical movement in the vertical direction, and turning movement around the vertical axis. The transfer arm A2 is configured to take out the substrate W from the shelf unit 6 and deliver it to the substrate processing unit U, and also to receive the substrate W from the substrate processing unit U and return it into the shelf unit 6.

[0015] In the example shown in FIGS. 1 and 2, the plurality of substrate processing units U include a plurality (for example, three) of substrate processing units U arranged vertically on one side of the transfer unit 8 and a plurality (for example, three) of substrate processing units U arranged vertically on the other side of the transfer unit 8. The substrate processing unit U includes a liquid processing unit U1 and a drying processing unit U2. In the example shown in FIGS. 1 and 2, the liquid processing unit U1 and the drying processing unit U2 are arranged adjacent to each other along the longitudinal direction of the transfer unit 8 (the left-right direction in FIG. 1).

[0016] [Liquid processing unit] Subsequently, with reference to FIGS. 1 to 3, the liquid processing unit U1 will be described in detail. As illustrated in FIGS. 1 and 2, the liquid processing unit U1 includes a metering unit U11, a liquid processing unit U12, and a measuring unit U13.

[0017] The metering unit U11 is configured to measure the weight of the substrate W carried into the liquid processing unit U1. The metering unit U11 is configured to transmit the measured weight data to the controller Ctr.

[0018] The liquid processing unit U12 is configured to perform predetermined liquid processing on the substrate W. The predetermined liquid processing includes, for example, a cleaning process of the substrate W and a process of forming a liquid film R (see FIG. 3) on the surface Wa (see FIG. 3) of the substrate W. The liquid processing unit U12 may be, for example, a single-wafer cleaning apparatus that cleans the substrate W one by one by spin cleaning. As illustrated in FIG. 3, the liquid processing unit U12 includes a rotation holding unit 10, a cleaning liquid supply unit 20, a rinse liquid supply unit 30, and a processing liquid supply unit 40.

[0019] The rotation holding unit 10 includes a rotation unit 11, a shaft 12, and a holding unit 13. The rotation unit 11 operates based on an operation signal from the controller Ctr and is configured to rotate the shaft 12. The rotation unit 11 may be a power source such as an electric motor, for example.

[0020] The holding unit 13 is provided at the tip of the shaft 12. The holding unit 13 is configured to adsorb and hold the back surface of the substrate W by, for example, adsorption. That is, the rotation holding unit 10 may be configured to rotate the substrate W around a central axis (rotation axis) perpendicular to the surface Wa of the substrate W in a state where the posture of the substrate W is substantially horizontal. As illustrated in FIG. 3, the rotation holding unit 10 may rotate the substrate W clockwise when viewed from above.

[0021] The cleaning liquid supply unit 20 is configured to supply the cleaning liquid L1 to the substrate W. The cleaning liquid L1 may be, for example, a chemical solution for removing a thin film (e.g., a natural oxide film such as a silicon oxide film) on the surface Wa of the substrate W, or a chemical solution for removing foreign substances (e.g., particles, organic substances, etc.) attached to the surface Wa of the substrate W. The chemical solution may contain an acidic or alkaline chemical solution. The acidic chemical solution may contain, for example, SC-2 solution (a mixed solution of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixed solution of sulfuric acid and hydrogen peroxide solution), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO3+HF solution (a mixed solution of nitric acid and hydrofluoric acid), etc. The alkaline chemical solution may contain, for example, SC-1 solution (a mixed solution of ammonia, hydrogen peroxide, and pure water), hydrogen peroxide solution, etc. The temperature of the cleaning liquid L1 can be set to various values depending on the cleaning conditions of the substrate W, but may be, for example, about 20°C to 160°C.

[0022] The cleaning liquid supply unit 20 includes a liquid source 21, a pump 22, a valve 23, a nozzle 24, a pipe 25, and a drive source 26. The liquid source 21 is a supply source of the cleaning liquid L1. As illustrated in FIGS. 1 and 2, the liquid source 21 may be disposed within the loading / unloading unit 5. Returning to FIG. 3, the pump 22 operates based on an operation signal from the controller Ctr, and is configured to send out the cleaning liquid L1 sucked from the liquid source 21 to the nozzle 24 via the pipe 25 and the valve 23.

[0023] The valve 23 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the flow of fluid in the pipe 25 and a closed state that obstructs the flow of fluid in the pipe 25. The nozzle 24 is disposed above the substrate W such that the discharge port faces the surface Wa of the substrate W. The nozzle 24 is configured to discharge the cleaning liquid L1 sent out from the pump 22 from the discharge port.

[0024] Pipe 25 connects, in order from the upstream side, liquid source 21, pump 22, valve 23, and nozzle 24. As illustrated in Figures 1 and 2, pipe 25 may extend while branching midway so as to connect liquid source 21 in load / unload section 5 with each nozzle 24 in liquid processing section U12 of multiple liquid processing units U1.

[0025] 3, the drive source 26 is directly or indirectly connected to the nozzle 24. The drive source 26 is configured to operate based on an operation signal from the controller Ctr, and to move the nozzle 24 above the substrate W in the horizontal or vertical direction.

[0026] The rinse liquid supply unit 30 is configured to supply a rinse liquid L2 to the substrate W. The rinse liquid L2 may be, for example, a liquid for removing (rinsing away) the cleaning liquid L1 supplied to the surface Wa of the substrate W and components dissolved in a film by the cleaning liquid L1 from the surface Wa. The rinse liquid L2 may contain, for example, deionized water (DIW), ozone water, carbonated water (CO2 water), ammonia water, or the like.

[0027] The rinse liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, a pipe 35, and a drive source 36. The liquid source 31 is a supply source of the rinse liquid L2. Although not shown, the liquid source 31 may be disposed inside the load / unload unit 5. The pump 32 operates based on an operation signal from the controller Ctr, and is configured to pump the rinse liquid L2 sucked from the liquid source 31 to the nozzle 34 via the pipe 35 and the valve 33.

[0028] The valve 33 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the fluid to flow through the pipe 35 and a closed state that prevents the fluid from flowing through the pipe 35. The nozzle 34 is disposed above the substrate W so that its outlet faces the front surface Wa of the substrate W. The nozzle 34 is configured to discharge the rinsing liquid L2 fed from the pump 32 from the outlet.

[0029] The pipe 35 connects a liquid source 31, a pump 32, a valve 33, and a nozzle 34 in order from the upstream side. Although not shown, the pipe 35 may extend while branching in the middle so as to connect the liquid source 31 in the carry-in / carry-out unit 5 and each nozzle 34 in the liquid treatment unit U12 of the plurality of liquid treatment units U1.

[0030] The drive source 36 is directly or indirectly connected to the nozzle 34. The drive source 36 operates based on an operation signal from the controller Ctr, and is configured to move the nozzle 34 along the horizontal direction or the vertical direction above the substrate W.

[0031] The treatment liquid supply unit 40 is configured to supply the treatment liquid L3 to the substrate W. The treatment liquid L3 is, for example, a liquid for removing (washing away) the rinse liquid L2 supplied to the surface Wa of the substrate W from the surface Wa. When the rinse liquid L2 is replaced with the treatment liquid L3, a liquid film R of the treatment liquid L3 is formed on the surface Wa of the substrate W. The treatment liquid L3 may contain, for example, IPA (isopropyl alcohol).

[0032] The treatment liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44 (discharge nozzle), a pipe 45 (supply line), and a drive source 36. The liquid source 41 is a supply source of the treatment liquid L3. As illustrated in FIGS. 1 and 2, the liquid source 41 may be disposed in the carry-in / carry-out unit 5. Returning to FIG. 3, the pump 42 operates based on an operation signal from the controller Ctr, and is configured to send out the treatment liquid L3 sucked from the liquid source 41 to the nozzle 44 via the pipe 45 and the valve 43.

[0033] The valve 43 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the flow of fluid in the pipe 45 and a closed state that prevents the flow of fluid in the pipe 45. The nozzle 44 is disposed above the substrate W such that the discharge port faces the surface Wa of the substrate W. The nozzle 44 is configured to discharge the treatment liquid L3 sent out from the pump 42 from the discharge port.

[0034] The pipe 45 connects a liquid source 41, a pump 42, a valve 43, and a nozzle 44 in order from the upstream side. As illustrated in FIGS. 1 and 2, the pipe 45 may start from the liquid source 41 in the loading / unloading section 5, branch so as to pass through each of the liquid processing sections U12 of the plurality of liquid processing units U1, and then merge again and extend back to the liquid source 41. That is, the processing liquid L3 may flow so as to circulate through the pipe 45.

[0035] As illustrated in FIG. 2, within each liquid processing section U12, the pipe 45 may include an intermediate portion 45a disposed in the vicinity of the pipe 25 and a tip portion 45b branched from the intermediate portion 45a and connected to the nozzle 44. That is, with respect to the flow direction of the processing liquid L3, the intermediate portion 45a is disposed upstream of the tip portion 45b. The processing liquid L3 flowing through the intermediate portion 45a may be heated by the heat of the cleaning liquid L1 flowing through the pipe 25 located in its vicinity.

[0036] Returning to FIG. 3, the drive source 46 is directly or indirectly connected to the nozzle 44. The drive source 46 operates based on an operation signal from the controller Ctr and is configured to move the nozzle 44 along the horizontal direction or the vertical direction above the substrate W.

[0037] The measurement unit U13 is configured to measure the temperature of the processing liquid L3 flowing through the pipe 45. The measurement unit U13 may be configured to measure the temperature of the processing liquid L3 flowing through the tip portion 45b as illustrated in FIG. 2, or may be configured to measure the temperature of the processing liquid L3 flowing through a portion of the pipe 45 other than the tip portion 45b. The measurement unit U13 is configured to transmit the measured temperature data to the controller Ctr.

[0038] [Drying Processing Unit U2] Subsequently, with reference to FIGS. 1, 2, and 4, the drying processing unit U2 will be described in detail. As illustrated in FIGS. 1 and 2, the drying processing unit U2 includes a metering unit U21 and a drying processing unit U22.

[0039] The weighing unit U21 is configured to measure the weight of the substrate W carried into the dry processing unit U2. The weighing unit U21 is configured to transmit data of the measured weight to the controller Ctr.

[0040] The drying processing unit U22 is configured to perform supercritical processing on a substrate W having a liquid film R formed on its surface Wa. The supercritical processing is a process of drying the substrate W by bringing a processing fluid in a supercritical state (supercritical fluid) into contact with the substrate W having the liquid film R formed on its surface Wa. As illustrated in FIG. 4, the drying processing unit U22 includes a main body 51, a holding plate 52, and a lid member 53.

[0041] The main body 51 is a container configured to be able to accommodate the substrate W inside. An opening 51a is formed in the front of the main body 51 to allow the substrate W to enter and exit. Supply ports 54 and 55 and a discharge port 56 are provided in the wall of the main body 51.

[0042] The supply ports 54, 55 are each connected to a supply source (not shown) of a processing fluid (e.g., carbon dioxide) via a supply pipe. The supply port 54 is connected to a supply header 57 attached to the rear surface of the main body 51. The supply port 55 is connected to a supply header 58 attached to the bottom surface of the main body 51. The supply headers 57, 58 each include a plurality of supply ports aligned in a predetermined direction, and are configured to supply the supercritical fluid into the main body 51 from the supply ports.

[0043] The discharge port 56 is connected to a discharge pipe extending outside the main body 51. The discharge port 56 is connected to a discharge header 59 attached near the opening 51a of the main body 51. The discharge header 59 includes a plurality of discharge ports aligned in a predetermined direction and is configured to discharge the supercritical fluid from the discharge ports to the outside of the main body 51. The supercritical fluid discharged from the discharge header 59 to the outside of the main body 51 may include the processing liquid L3 that has been dissolved in the supercritical fluid in a supercritical state from the surface of the substrate W.

[0044] The holding plate 52 is configured to be able to horizontally hold the substrate W to be processed. The lid member 53 is attached to the holding plate 52 and configured to seal the opening 51 a when the holding plate 52 is inserted into the main body 51 through the opening 51 a.

[0045] [Controller Details] The controller Ctr is configured to partially or entirely control the substrate processing system 1. As illustrated in FIG. 5, the controller Ctr has functional modules including a reading unit M1, a memory unit M2, a processing unit M3, and an instruction unit M4. These functional modules are merely a division of the functions of the controller Ctr into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by the execution of a program, but may also be realized by a dedicated electric circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) integrating such circuits.

[0046] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each unit of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. Note that, hereinafter, each unit of the substrate processing system 1 may include each unit of the liquid processing unit U12 and the drying processing unit U22.

[0047] The memory unit M2 is configured to store various data. The memory unit M2 may store, for example, a program read from the recording medium RM by the reader M1, setting data input by an operator via an external input device (not shown), etc. The memory unit M2 may store, for example, weight data acquired by the weighing units U11 and U21, and temperature data acquired by the measurement unit U13. The memory unit M2 may store, for example, processing conditions for processing the substrate W, a liquid film model D1 for estimating a predicted liquid volume of the liquid film R formed on the surface Wa of the substrate W, and a processing condition model D2 for estimating the processing conditions for the substrate W. Details of the liquid film model D1 and the processing condition model D2 will be described later.

[0048] The processing unit M3 is configured to process various data, and may generate signals for operating each unit of the substrate processing system 1 based on the various data stored in the storage unit M2, for example.

[0049] The instruction unit M4 is configured to transmit the operation signal generated in the processing unit M3 to each unit of the substrate processing system 1.

[0050] The hardware of the controller Ctr may be configured, for example, by one or more control computers. The controller Ctr may include a circuit C1 as a hardware configuration, as exemplified in Fig. 6. The circuit C1 may be configured by electric circuit elements. The circuit C1 may include, for example, a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0051] The processor C2 may be configured to execute a program in cooperation with at least one of the memory C3 and the storage C4 and to implement each of the above-mentioned functional modules by inputting and outputting signals via the input / output port C6. The memory C3 and the storage C4 may function as the storage unit M2. The driver C5 may be a circuit configured to drive each component of the substrate processing system 1. The input / output port C6 may be configured to mediate the input and output of signals between the driver C5 and each component of the substrate processing system 1.

[0052] The substrate processing system 1 may include one controller Ctr, or may include a controller group (controller) composed of multiple controllers Ctr. When the substrate processing system 1 includes a controller group, each of the above-mentioned functional modules may be realized by one controller Ctr, or may be realized by a combination of two or more controllers Ctr. When the controller Ctr is composed of multiple computers (circuits C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or may be realized by a combination of two or more computers (circuits C1). The controller Ctr may include multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or may be realized by a combination of two or more processors C2.

[0053] [Model generation method] Next, a method for generating the liquid film model D1 will be described with reference to Figures 7 and 8. First, the test substrate is transported to the liquid processing unit U1 (see step S1 in Figure 7). Next, the test substrate is placed on the weighing section U11, and the weight of the test substrate is measured (see step S2 in Figure 7). The measured weight data is sent to the controller Ctr.

[0054] Next, the test substrate is held by the rotation holder 10 of the liquid processing unit U12. Next, the controller Ctr controls the rotation holder 10 to rotate the test substrate while suction-holding it with the holder 13. In this state, the controller Ctr controls the cleaning liquid supply unit 20 to supply cleaning liquid L1 from the nozzle 24 onto the front surface of the test substrate (see step S3 in FIG. 7).

[0055] The cleaning liquid L1 supplied to the surface of the test substrate flows from the center to the outer periphery of the test substrate over the entire surface as the test substrate rotates, and is then spun outward from the outer periphery. Therefore, while the cleaning liquid L1 continues to be supplied from the nozzle 24, a liquid film of the cleaning liquid L1 is formed on the surface of the test substrate. As a result, the test substrate is cleaned by the cleaning liquid L1.

[0056] Next, the controller Ctr controls the rotation holder 10 to rotate the test substrate while suction-holding the rear surface of the test substrate with the holder 13. In this state, the controller Ctr controls the rinse liquid supply unit 30 to supply the rinse liquid L2 from the nozzle 34 to the front surface of the test substrate (see step S4 in FIG. 7).

[0057] As the test substrate rotates, the rinsing liquid L2 supplied to the surface of the test substrate flows from the center of the test substrate toward the outer periphery, replacing the cleaning liquid L1, over the entire surface, and is then spun outward from the outer periphery of the test substrate. As a result, the cleaning liquid L1 is discharged from the surface of the test substrate, and a liquid film of the rinsing liquid L2 is formed on the surface of the test substrate while the supply of the rinsing liquid L2 from the nozzle 34 continues.

[0058] Next, the temperature of the processing liquid L3 supplied to the surface of the test substrate is measured by the measuring unit U13 (see step S5 in FIG. 7), and the measured temperature data is sent to the controller Ctr.

[0059] Next, the controller Ctr controls the rotation holder 10 to rotate the test substrate while suction-holding the rear surface of the test substrate with the holder 13. In this state, the controller Ctr controls the processing liquid supply unit 40 to supply the processing liquid L3 from the nozzle 44 onto the front surface of the test substrate (see step S6 in FIG. 7).

[0060] As the test substrate rotates, the processing liquid L3 supplied to the surface of the test substrate flows over the entire surface from the center toward the outer periphery of the test substrate, replacing the rinsing liquid L2. The processing liquid L3 is then shaken off from the outer periphery of the test substrate (see processing period T1 in FIG. 8 ). When the rinsing liquid L2 on the surface of the test substrate has been replaced with the processing liquid L3, the controller Ctr controls the processing liquid supply unit 40 to gradually stop the supply of the processing liquid L3 (see processing period T2 in FIG. 8 ). The controller Ctr then controls the rotation holder 10 to increase the rotation speed of the test substrate (see processing period T3 in FIG. 8 ), and stops the rotation of the test substrate after a predetermined time has elapsed. This causes the excess processing liquid L3 on the test substrate to be shaken off, forming a predetermined amount of liquid film R on the surface of the test substrate.

[0061] During the processing period T3, the rotation speed of the substrate may be set to, for example, about 10 rpm to 300 rpm. During the processing period T3, the rotation acceleration of the substrate may be set to, for example, 200 rpm. 2 ~1500r.ps 2 In the processing period T3, the rotation time of the substrate may be set to, for example, about 0.1 sec to 5 sec.

[0062] Next, place the test substrate with the liquid film R formed on its surface on the weighing unit U11, and measure the weight of the test substrate and the liquid film R (see step S7 in FIG. 7). The measured weight data is transmitted to the controller Ctr. The controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S2 from the weight data measured in step S7. Further, the controller Ctr calculates the liquid volume of the liquid film R, that is, the volume of the liquid film R, by dividing the weight by the density of the treatment liquid L3 (see step S8 in FIG. 7). In this way, the temperature of the treatment liquid L3 measured in step S5 and the liquid volume of the liquid film R formed on the surface of the test substrate are associated and stored in the controller Ctr.

[0063] Then, without changing the rotation speed, rotational acceleration, and rotation time of the test substrate during the treatment period T3 (hereinafter, these parameters may be collectively referred to as "treatment conditions"), while changing the temperature of the treatment liquid L3, form the liquid film R on the surfaces of a plurality of test substrates, and repeat the process of obtaining the liquid volume of the liquid film R. As a result, a plurality of data indicating the correspondence between the temperature of the treatment liquid L3 and the liquid volume of the liquid film R are obtained (see FIG. 9(a)). Based on these plurality of data, for example, by calculating an approximate straight line by the least squares method or the like, a liquid film model D1 in which the temperature of the treatment liquid L3 and the liquid volume of the liquid film R are associated is obtained (see step S9 in FIG. 7). Note that in obtaining the liquid film model D1, it is only necessary that the type of the treatment liquid L3 and the treatment conditions during the treatment period T3 are set to be the same among the plurality of test substrates.

[0064] Next, a method for generating the process condition model D2 will be described. The method for generating the process condition model D2 is substantially the same as the method for generating the liquid film model D1. However, the difference is that the rotational acceleration and rotation time of the test substrate during the processing period T3 and the temperature of the processing liquid L3 are not changed, and the process of forming the liquid film R on the surface of multiple test substrates and acquiring the liquid volume of the liquid film R is repeated while changing the rotational speed of the test substrate during the processing period T3. Therefore, multiple data showing the correspondence relationship between the rotational speed of the substrate during the processing period T3 and the liquid volume of the liquid film R are obtained (see FIG. 9(b)). Based on these multiple data, an approximation line is calculated using, for example, the least squares method, to obtain the process condition model D2 in which the rotational speed of the substrate during the processing period T3 corresponds to the liquid volume of the liquid film R. Note that the process condition model D2 in which the rotational acceleration of the substrate during the processing period T3 corresponds to the liquid volume of the liquid film R may be generated instead of the rotational speed of the substrate during the processing period T3. Furthermore, a processing condition model D2 may be generated in which, instead of the rotation speed of the substrate during the processing period T3, the rotation time of the substrate during the processing period T3 is associated with the liquid volume of the liquid film R. Alternatively, a processing condition model D2 may be generated in which at least one of the rotation speed, rotation acceleration, and rotation time of the substrate during the processing period T3 is associated with the liquid volume of the liquid film R.

[0065] [Substrate processing method] Next, a method for processing the substrate W will be described with reference to Fig. 10. First, the controller Ctr controls the transport arms A1 and A2 to transport the substrate W from the carrier 7 to the liquid processing unit U1 (see step S11 in Fig. 10). Next, the substrate W is placed on the weighing section U11, and the weight of the substrate W is measured (see step S12 in Fig. 10). Data on the measured weight is sent to the controller Ctr.

[0066] Next, the substrate W is held by the spin holder 10 of the liquid processing unit U12. Next, the controller Ctr controls the spin holder 10 to rotate the substrate W while suction-holding the back surface of the substrate W with the holder 13. In this state, the controller Ctr controls the cleaning liquid supply unit 20 to supply the cleaning liquid L1 from the nozzle 24 to the front surface Wa of the substrate W (see step S13 in FIG. 10).

[0067] The cleaning liquid L1 supplied to the surface Wa of the substrate W flows over the entire surface Wa from the central portion of the substrate W toward the outer peripheral edge by the rotation of the substrate W, and then is flung outward from the outer peripheral edge. Therefore, while the supply of the cleaning liquid L1 from the nozzle 24 is continued, a liquid film of the cleaning liquid L1 is formed on the surface Wa of the substrate W. Thereby, the substrate W is cleaned by the cleaning liquid L1.

[0068] Next, the controller Ctr controls the rotation holding unit 10 to rotate the substrate W while sucking and holding the back surface of the substrate W by the holding unit 13. In this state, the controller Ctr controls the rinse liquid supply unit 30 to supply the rinse liquid L2 from the nozzle 34 to the surface Wa of the substrate W (see step S14 in FIG. 10).

[0069] The rinse liquid L2 supplied to the surface Wa of the substrate W flows over the entire surface Wa while replacing the cleaning liquid L1 from the central portion of the substrate W toward the outer peripheral edge by the rotation of the substrate W, and then is flung outward from the outer peripheral edge of the substrate W. Therefore, while the cleaning liquid L1 is discharged from the surface Wa of the substrate W and the supply of the rinse liquid L2 from the nozzle 34 is continued, a liquid film of the rinse liquid L2 is formed on the surface Wa of the substrate W.

[0070] Next, the temperature of the processing liquid L3 supplied to the surface of the test substrate is measured by the measuring unit U13 (see step S15 in FIG. 10). The measured temperature data is transmitted to the controller Ctr. The controller Ctr calculates the predicted liquid volume of the liquid film R corresponding to the temperature based on the received temperature data and the liquid film model D1 stored in the storage unit M2. Further, the controller Ctr calculates the processing conditions (for example, the rotation speed of the substrate during the processing period T3) under which the predicted liquid volume can be obtained based on the calculated predicted liquid volume and the processing condition model D2 stored in the storage unit M2 (see step S16 in FIG. 10).

[0071] Next, the controller Ctr controls the rotation holder 10 to rotate the substrate W while suction-holding the backside of the substrate W with the holder 13. In this state, the controller Ctr controls the processing liquid supply unit 40 to supply the processing liquid L3 from the nozzle 44 to the front side Wa of the substrate W (see step S17 in FIG. 10).

[0072] The processing liquid L3 supplied to the front surface Wa of the substrate W flows over the entire surface from the center of the substrate W toward the outer periphery as the substrate W rotates, replacing the rinsing liquid L2. The processing liquid L3 is then spun outward from the outer periphery of the substrate W (see processing period T1 in FIG. 8 ). When the rinsing liquid L2 on the front surface Wa of the substrate W has been replaced with the processing liquid L3, the controller Ctr controls the processing liquid supply unit 40 to gradually stop the supply of the processing liquid L3 (see processing period T2 in FIG. 8 ). Thereafter, the controller Ctr controls the spin holder 10 to increase the rotation speed of the substrate W based on the processing conditions calculated in step S16 (see processing period T3 in FIG. 8 ), and stops the rotation of the substrate W after a predetermined time has elapsed. This forms a liquid film R of a predetermined amount on the front surface Wa of the substrate W.

[0073] Next, the substrate W having the liquid film R formed on its surface is placed on the weighing unit U11, and the weight of the substrate W and the liquid film R is measured (see step S18 in FIG. 10). The measured weight data is sent to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S12 from the weight data measured in step S18. Furthermore, the controller Ctr calculates the liquid volume of the liquid film R by dividing the weight by the density of the processing liquid L3 (see step S18 in FIG. 10).

[0074] The liquid volume of the liquid film R calculated in step S18 (hereinafter referred to as the measured liquid volume 1) should be approximately equal to the predicted liquid volume calculated in step S16. However, due to various factors, such as a malfunction of the liquid processing unit U1, the measured liquid volume 1 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the measured liquid volume 1 is within a predetermined target range H1 (see step S19 in FIG. 10). The target range H1 may be set, for example, to a range of ±5% or less of the predicted liquid volume, with the predicted liquid volume as the reference.

[0075] If the controller Ctr determines NO in step S19, the substrate W has not been dried and can be reused, so the process proceeds to step S20, where the processing conditions are corrected, and the processing from step S11 onwards is performed again on the same substrate W. If the controller Ctr determines in step S19 that the measured liquid volume 1 is greater than the target range H1, the controller Ctr may correct the substrate rotation speed during processing period T3 in step S20, for example, to increase the substrate rotation acceleration during processing period T3, or to lengthen the substrate rotation time during processing period T3. On the other hand, if the controller Ctr determines in step S19 that the measured liquid volume 1 is smaller than the target range H1, the controller Ctr may correct the substrate rotation speed during processing period T3 in step S20, for example, to decrease the substrate rotation acceleration during processing period T3, or to shorten the substrate rotation time during processing period T3. In addition, if it is determined in step S19 that the actual measured liquid volume 1 is significantly larger than the target range H1 or significantly smaller than the target range H1, it may be assumed that an unexpected malfunction has occurred and the processing of the substrate W may be stopped.

[0076] If the controller Ctr determines YES in step S19, the controller Ctr controls the transfer arm A2 to transfer the substrate W from the liquid processing unit U1 to the drying processing unit U2 (see step S21 in FIG. 10). Next, the substrate W is placed on the weighing unit U21, and the weight of the substrate W is measured (see step S22 in FIG. 10). The measured weight data is transmitted to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S12 from the weight data measured in step S22. Further, the controller Ctr calculates the liquid volume of the liquid film R by dividing the weight by the density of the processing liquid L3 (see step S22 in FIG. 10).

[0077] The liquid volume of the liquid film R calculated in step S22 (hereinafter referred to as the actually measured liquid volume 2) should be approximately equal to the actually measured liquid volume 1 and the predicted liquid volume calculated in step S16. However, due to various factors such as liquid spilling from the substrate W during the process of transporting the substrate W to the drying processing unit U2, the actually measured liquid volume 2 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the actually measured liquid volume 2 is within a predetermined target range H2 (see step S23 in FIG. 10). The target range H2 may be set, for example, within a range of ±5% or less of the predicted liquid volume based on the predicted liquid volume. The target range H2 may be the same as the target range H1.

[0078] If the controller Ctr determines NO in step S23, since there is a concern that spilling of the processing liquid L3 has occurred, the process proceeds to step S24 to stop the processing of the substrate W. Since the substrate W cannot be processed again, it is discarded.

[0079] When the controller Ctr determines that the answer is YES in step S23, the substrate W is held by the holding plate 52, and the substrate W together with the holding plate 52 is inserted into the main body 51 of the drying processing unit U22. When a supercritical fluid in a high-pressure state (for example, about 16 MPa) is supplied to the substrate W in the drying processing unit U22, the liquid film R filled between the patterns formed on the substrate W gradually dissolves in the supercritical fluid by coming into contact with the supercritical fluid, and is gradually replaced by the supercritical fluid. And finally, the space between the patterns is filled only with the supercritical fluid.

[0080] After the liquid film R is removed from between the patterns by replacement with the supercritical fluid, when the pressure in the main body 51 is reduced from the high-pressure state to the atmospheric pressure, the supercritical fluid changes to a gaseous state, and the space between the patterns is occupied only by the gas. In this way, the liquid film R is removed from the surface Wa of the substrate W, and the drying process of the substrate W is completed (see step S25 in FIG. 10).

[0081] Next, the substrate W is placed on the weighing unit U21, and the weight of the substrate W is measured (see step S26 in FIG. 10). The measured weight data is transmitted to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S26 from the weight data measured in step S22. Further, the controller Ctr calculates the liquid volume of the liquid film R by dividing the weight by the density of the processing liquid L3 (see step S26 in FIG. 10).

[0082] The liquid volume of the liquid film R calculated in step S26 (hereinafter referred to as the actually measured liquid volume 3) should be approximately equal to the actually measured liquid volumes 1 and 2 and the predicted liquid volume calculated in step S16. However, due to the influence of various factors such as a defect in the drying processing unit U2, the actually measured liquid volume 3 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the actually measured liquid volume 3 is within a predetermined target range H3 (see step S27 in FIG. 10). The target range H3 may be set, for example, within a range of ±5% or less of the predicted liquid volume based on the predicted liquid volume. The target range H3 may be the same as the target range H1.

[0083] If the controller Ctr determines NO in step S27, since there is a concern that the drying of the liquid film R is not being performed normally, the process proceeds to step S24 to stop the processing of the substrate W. Since the substrate W cannot be processed again, it is discarded.

[0084] If the controller Ctr determines YES in step S27, the controller Ctr determines whether the actually measured liquid amount 3 is within a predetermined target range H4 (see step S28 in FIG. 10). The target range H4 is a range narrower than the target range H3, and for example, it may be set within a range of ±3% or less of the predicted liquid amount based on the predicted liquid amount.

[0085] If the controller Ctr determines NO in step S28, although the actually measured liquid amount 3 is within the target range H3 and thus appropriate substrate processing is being performed to some extent, it is slightly deviated from the predicted liquid amount which is the reference value. Therefore, the process proceeds to step S20, the processing conditions are corrected, and the processing from step S11 and below is executed for the subsequent substrate W.

[0086] If the controller Ctr determines YES in step S28, the controller Ctr controls the transfer arms A1 and A2 to transfer the substrate W to the carrier 7 (see step S29 in FIG. 10). Thus, the processing of the substrate W is completed.

[0087] [Operation] According to the above example, a liquid film model D1 representing the relationship between the temperature of the processing liquid L3 supplied to the substrate W and the liquid amount of the liquid film R formed on the surface Wa of the substrate W is prepared in advance, and the processing conditions of the substrate W are set so as to obtain a predicted liquid amount calculated based on the temperature of the processing liquid L3 measured during actual substrate processing and the liquid film model D1. Therefore, a liquid film R with an appropriate liquid amount is formed on the surface Wa of the substrate W according to the temperature of the processing liquid L3 supplied to the substrate W during actual substrate processing. Therefore, it is possible to accurately adjust the liquid amount of the liquid film R formed on the surface Wa of the substrate W.

[0088] According to the above example, by rotating the substrate W to shake off the excess portion of the processing liquid L3 on the substrate W from the substrate W, the liquid volume of the liquid film R formed on the surface Wa of the substrate W is adjusted. Therefore, it is possible to adjust the liquid volume of the liquid film R formed on the surface Wa of the substrate W by an extremely simple method of rotating the substrate W.

[0089] According to the above example, a processing condition model D2 representing the relationship between the processing conditions during the processing period T3 and the liquid volume of the liquid film R formed on the surface Wa of the substrate W is prepared in advance, and based on the processing condition model D2 and the predicted liquid volume calculated in step S16, the processing conditions are set. Therefore, the substrate W can be processed quickly without going through trial and error of forming the liquid film R on the substrate W multiple times until a liquid film R with the predicted liquid volume is obtained. Therefore, it is possible to quickly process the substrate W while accurately adjusting the liquid volume of the liquid film R formed on the surface Wa of the substrate W.

[0090] According to the above example, the processing conditions can be at least one of the rotation speed of the substrate W, the rotational acceleration of the substrate W, and the rotation time of the substrate W during the processing period T3. Since these are particularly used as indicators when controlling the rotation of the substrate W, it is possible to more easily adjust the liquid volume of the liquid film R formed on the surface Wa of the substrate W.

[0091] According to the above example, the cleaning liquid L1, the rinse liquid L2, and the processing liquid L3 are sequentially supplied to the substrate W. In this case, the supply of the processing liquid L3 and the drying process are further performed on the substrate W cleaned by the cleaning liquid L1 and the rinse liquid L2. Therefore, it is possible to maintain the cleanliness of the substrate W after cleaning.

[0092] According to the above example, the measuring unit U13 is configured to measure the temperature of the processing liquid L3 flowing through the tip portion 45b. That is, the temperature of the processing liquid L3 immediately before or slightly before being discharged onto the substrate W is measured by the measuring unit U13. Therefore, the temperature of the processing liquid L3 supplied to the substrate W can be obtained with higher accuracy. Accordingly, it becomes possible to more accurately grasp the predicted liquid volume of the liquid film R formed on the surface Wa of the substrate W. In particular, according to the above example, the intermediate portion 45a is located near the pipe 25 through which the cleaning liquid L1 flows, and the temperature of the processing liquid L3 flowing through the tip portion 45b after being warmed by the cleaning liquid L1 is measured by the measuring unit U13. Therefore, the temperature of the processing liquid L3 before being discharged onto the substrate W and after being affected by external heat is measured. Accordingly, it becomes possible to more accurately grasp the predicted liquid volume of the liquid film R formed on the surface Wa of the substrate W as compared with the case where the temperature of the processing liquid L3 flowing on the upstream side of the tip portion 45b is measured.

[0093] According to the above example, the substrate W can be dried by supercritical processing. Therefore, when a pattern is formed on the substrate W, it is possible to suppress the pattern from collapsing during the drying process.

[0094] According to the above example, the processing conditions can be corrected based on the comparison between the actually measured liquid volume 1 and the target range H1. Similarly, the processing conditions can be corrected based on the comparison between the actually measured liquid volume 3 and the target range H4. In this case, the processing conditions are corrected according to the degree of deviation of the liquid volume of the liquid film R actually formed on the surface of the substrate W from the predicted liquid volume serving as a reference. Therefore, it becomes possible to more accurately adjust the liquid volume of the liquid film R formed on the surface Wa of the subsequent substrate W.

[0095] According to the above example, the processing of the substrate W can be stopped based on the comparison between the actually measured liquid volumes 1 to 3 and the target ranges H1 to H3. In this case, since there is a concern that the substrate W after the formation of the liquid film R or the substrate W after the drying process has a defect, by stopping the processing of the substrate W, the substrate W can be excluded from the subsequent processing. Therefore, it becomes possible to improve the productivity of the substrate processing.

[0096] [Modification Example] The disclosures in this specification should be considered illustrative in all respects and not restrictive. Various omissions, substitutions, changes, etc. may be made to the above examples without departing from the scope of the claims and their gist.

[0097] (1) When stopping the processing of the substrate W in step S24, a warning using an alarm or the like may be notified to the operator.

[0098] (2) The discharge flow rate of the processing liquid L3 may be changed according to the temperature of the processing liquid L3 measured by the measuring unit U13.

[0099] (3) A liquid film model D1 in which the environmental temperature in the drying processing unit U2 and the liquid amount of the liquid film R formed on the surface of the substrate are associated may be generated.

[0100] [Other Examples] Example 1. An example of a substrate processing apparatus includes a liquid processing unit configured to supply a processing liquid while rotating a substrate to form a liquid film on the surface of the substrate, a measuring unit configured to measure the temperature of the processing liquid supplied to the substrate, a drying processing unit configured to dry the substrate on which the liquid film is formed, and a control unit. The control unit performs a first process of calculating a predicted liquid amount of the liquid film formed on the surface of the substrate based on a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the liquid amount of the liquid film formed on the surface of the substrate, and the temperature measured by the measuring unit, a second process of setting processing conditions such that the predicted liquid amount calculated in the first process is obtained, and a third process of forming a liquid film on the surface of the substrate in the liquid processing unit based on the processing conditions set in the second process.

[0101] The liquid film formed on the surface of the substrate serves to prevent the substrate surface from drying out before the substrate is transported to the drying unit and subjected to drying processing, thereby preventing particles from being generated on the surface. However, if the amount of liquid film on the surface of the substrate is too small, the pattern formed on the substrate may collapse during drying processing. On the other hand, if the amount of liquid film on the surface of the substrate is too large, particles may be generated on the substrate after drying processing. Therefore, the inventors have conducted extensive research and discovered a new finding: when the temperature of the processing liquid supplied to the substrate changes, the volume of the liquid film formed on the surface of the substrate expands or contracts, causing variations in the amount of the liquid film, which may affect the subsequent drying processing of the substrate. This finding led to the completion of the present invention. That is, according to Example 1, a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the amount of the liquid film formed on the surface of the substrate is prepared in advance, and the substrate processing conditions are set so that the temperature of the processing liquid measured during actual substrate processing and the predicted liquid amount calculated based on the liquid film model are the same. Therefore, an appropriate amount of liquid film is formed on the surface of the substrate depending on the temperature of the processing liquid supplied to the substrate during actual substrate processing, and therefore the amount of liquid film formed on the surface of the substrate can be adjusted with precision.

[0102] Example 2: In the apparatus of Example 1, the third process may include supplying the processing liquid while rotating the substrate to spread the processing liquid over the surface of the substrate, and spinning off excess processing liquid from the substrate by rotating the substrate so that the amount of liquid in the liquid film formed on the surface of the substrate is the predicted amount. In this case, the amount of liquid in the liquid film formed on the surface of the substrate can be adjusted by the extremely simple method of rotating the substrate.

[0103] Example 3. In the apparatus of Example 2, the second process may include setting the processing conditions based on a processing condition model that represents the relationship between the processing conditions when cutting off the surplus portion from the substrate and the amount of liquid in the liquid film formed on the surface of the substrate, and the predicted liquid amount calculated in the first process. In this case, by preparing the processing condition model in advance, the processing conditions for the predicted liquid amount can be calculated immediately. Therefore, the substrate can be processed quickly without going through trial and error such as forming the liquid film on the substrate multiple times until a liquid film with the predicted liquid amount is obtained. Thus, it becomes possible to quickly process the substrate while accurately adjusting the amount of liquid in the liquid film formed on the surface of the substrate.

[0104] Example 4. In the apparatus of Example 2 or 3, the processing conditions may be at least one of the rotation speed of the substrate, the rotational acceleration of the substrate, and the rotation time of the substrate when cutting off the surplus portion from the substrate. Since these are particularly used as indicators when controlling the rotation of the substrate, it becomes possible to more easily adjust the amount of liquid in the liquid film formed on the surface of the substrate.

[0105] Example 5. In the apparatus of any one of Examples 1 to 4, the control unit may be further configured to execute a fourth process of cleaning the surface of the substrate by sequentially supplying a cleaning liquid and a rinse liquid while rotating the substrate before the third process. In this case, the supply of the processing liquid and the drying process are further executed on the substrate cleaned by the cleaning liquid and the rinse liquid. Therefore, it becomes possible to maintain the cleanliness of the substrate after cleaning.

[0106] Example 6. In the apparatus of Example 5, the liquid processing unit includes a supply line configured such that the processing liquid flows through it, the supply line includes a tip connected to a discharge nozzle from which the processing liquid is discharged, and the measurement unit may be configured to measure the temperature of the processing liquid flowing through the tip. In this case, the temperature of the processing liquid immediately before or slightly before being discharged onto the substrate is measured by the measurement unit. Therefore, the temperature of the processing liquid supplied to the substrate can be obtained more accurately. Thus, it becomes possible to more accurately grasp the predicted liquid amount of the liquid film formed on the surface of the substrate.

[0107] Example 7. In any of the apparatuses of Examples 1 to 6, the processing liquid supplied to the substrate may be isopropyl alcohol.

[0108] Example 8. In any of the apparatuses of Examples 1 to 7, the drying unit may be configured to dry the substrate with a liquid film formed thereon by supercritical treatment. In this case, the supercritical fluid has a lower viscosity and a higher ability to dissolve the processing liquid compared to the processing liquid. Also, there is no interface between the supercritical fluid and the liquid or gas in an equilibrium state therewith. Therefore, in supercritical treatment (drying treatment using a supercritical fluid), the processing liquid can be dried without being affected by surface tension. Thus, when a pattern is formed on the substrate, it is possible to suppress the pattern from collapsing during the drying treatment.

[0109] Example 9. Any of the apparatuses of Examples 1 to 8 further includes a weighing unit configured to measure weight, and the control unit, after the third treatment, performs a fifth treatment of measuring the weight of the substrate with a liquid film formed on the surface in the third treatment by the weighing unit, a sixth treatment of calculating the liquid amount of the liquid film formed on the surface of the substrate based on the weight measured in the fifth treatment, and a seventh treatment of correcting the processing conditions set for the subsequent substrate processing based on the difference between the liquid amount calculated in the sixth treatment and a predetermined reference value. In this case, the processing conditions are corrected according to the degree to which the actual liquid amount of the liquid film formed on the surface of the substrate deviates from the reference value. Therefore, it becomes possible to more accurately adjust the liquid amount of the liquid film formed on the surface of the subsequent substrate.

[0110] Example 10. In the apparatus of Example 9, the control unit may be further configured to perform an eighth treatment of stopping the processing of the substrate without performing the seventh treatment when the liquid amount calculated in the sixth treatment is outside a predetermined target range. In this case, since there is a concern that defects may occur in the substrate after the drying treatment, by stopping the processing of the substrate, the substrate can be excluded from subsequent processing. Therefore, it becomes possible to improve the productivity of substrate processing.

[0111] Example 11. An example of the substrate processing method includes: a first step of constructing a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate in the liquid processing section and the liquid volume of the liquid film formed on the surface of the substrate by supplying the processing liquid to the substrate; a second step of measuring, by a measuring section, the temperature of the processing liquid before it is supplied to the substrate in the liquid processing section; a third step of calculating the predicted liquid volume of the liquid film formed on the surface of the substrate in the liquid processing section based on the liquid film model and the temperature measured by the measuring section; a fourth step of setting processing conditions such that the predicted liquid volume calculated in the third step is obtained; a fifth step of supplying the processing liquid while rotating the substrate in the liquid processing section based on the processing conditions set in the fourth step to form a liquid film on the surface of the substrate; and a sixth step of drying the substrate with the liquid film formed thereon in a drying processing section after the fifth step. In this case, the same operational effects as those of the apparatus of Example 1 can be obtained.

[0112] Example 12. In the method of Example 11, the fifth step may include spreading the processing liquid on the surface of the substrate by supplying the processing liquid while rotating the substrate, and flinging off the excess portion of the processing liquid supplied to the surface of the substrate from the substrate by rotating the substrate so that the liquid volume of the liquid film formed on the surface of the substrate becomes the predicted liquid volume. In this case, the same operational effects as those of the apparatus of Example 2 can be obtained.

[0113] Example 13. In the method of Example 12, the fourth step may include setting the processing conditions based on a processing condition model representing the relationship between the processing parameters when flinging off the excess portion from the substrate and the liquid volume of the liquid film formed on the surface of the substrate, and the predicted liquid volume calculated in the third step. In this case, the same operational effects as those of the apparatus of Example 3 can be obtained.

[0114] Example 14. In the method of Example 12 or Example 13, the processing conditions may be at least one of the rotation speed of the substrate, the rotational acceleration of the substrate, and the rotation time of the substrate when flinging off the excess portion from the substrate. In this case, the same operational effects as those of the apparatus of Example 4 can be obtained.

[0115] Example 15. Any of the methods of Examples 11 to 14 may further include a seventh step of cleaning the surface of the substrate by sequentially supplying a cleaning liquid and a rinsing liquid while rotating the substrate before the fifth step. In this case, the same operational effects as those of the apparatus of Example 5 can be obtained.

[0116] Example 16. In the method of Example 15, the liquid processing unit may include a supply line configured such that a processing liquid flows therethrough, the supply line includes a tip end portion connected to a discharge nozzle from which the processing liquid is discharged, and the measurement unit may be configured to measure the temperature of the processing liquid flowing through the tip end portion. In this case, the same operational effects as those of the apparatus of Example 6 can be obtained.

[0117] Example 17. In any of the methods of Examples 11 to 16, the processing liquid supplied to the substrate may be isopropyl alcohol.

[0118] Example 18. In any of the methods of Examples 11 to 17, the drying processing unit may be configured to dry the substrate having a liquid film formed thereon by supercritical processing. In this case, the same operational effects as those of the apparatus of Example 8 can be obtained.

[0119] Example 19. Any of the methods of Examples 11 to 18 may further include an eighth step of measuring, by a weighing unit, the weight of the substrate in a state where a liquid film is formed on the surface in the fifth step after the fifth step and before the sixth step, a ninth step of calculating the liquid amount of the liquid film formed on the surface of the substrate based on the weight measured in the eighth step, and a tenth step of correcting the processing conditions set in the subsequent processing of the substrate based on the difference between the liquid amount calculated in the ninth step and a predetermined reference value. In this case, the same operational effects as those of the apparatus of Example 9 can be obtained.

[0120] Example 20. The method of Example 19 may further include an eleventh step of stopping the processing of the substrate without performing the tenth step when the liquid amount calculated in the ninth step is outside a predetermined target range. In this case, the same operational effects as those of the apparatus of Example 10 can be obtained.

Explanation of Reference Numerals

[0121] 1… Substrate processing system (substrate processing apparatus), 20… Cleaning liquid supply unit, 40… Processing liquid supply unit, 44… Nozzle (discharge nozzle), 45… Pipe (supply line), 45b… Tip portion, Ctr… Controller (control unit), L1… Cleaning liquid, L2… Rinse liquid, L3… Processing liquid, D1… Liquid film model, R… Liquid film, U… Substrate processing unit (substrate processing apparatus), U1… Liquid processing unit, U11… Measuring unit, U12… Liquid processing section, U13… Measuring section, U2… Drying processing unit, U21… Measuring unit, U22… Drying processing section, W… Substrate, Wa… Surface.

Claims

1. A liquid processing unit configured to supply a processing liquid while rotating a substrate to form a liquid film on the surface of the substrate; A measuring unit configured to measure the temperature of the processing liquid supplied to the substrate; A drying processing unit configured to dry the substrate on which the liquid film is formed; A control unit, The control unit, Based on a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the liquid volume of the liquid film formed on the surface of the substrate, and the temperature measured by the measuring unit, a first process of calculating a predicted liquid volume of the liquid film formed on the surface of the substrate; A second process of setting processing conditions such that the predicted liquid volume calculated in the first process is obtained; Based on the processing conditions set in the second process, a third process of forming a liquid film on the surface of the substrate in the liquid processing unit is configured to be executed, The third process, Supplying a processing liquid while rotating the substrate to spread the processing liquid on the surface of the substrate; So that the liquid volume of the liquid film formed on the surface of the substrate becomes the predicted liquid volume, an excess portion of the processing liquid supplied to the surface of the substrate is removed from the substrate while the supply of the processing liquid to the substrate is stopped. The rotational speed of the substrate is increased at a predetermined rotational acceleration so that the rotational speed of the substrate becomes a predetermined target rotational speed, and when a predetermined rotational time has elapsed, the rotational speed of the substrate is started to decrease, thereby shaking off from the substrate, The second process includes setting the processing conditions based on a processing condition model representing the relationship between the processing conditions when shaking off the excess portion from the substrate and the liquid volume of the liquid film formed on the surface of the substrate, and the predicted liquid volume calculated in the first process, The processing conditions are the target rotational speed, the rotational acceleration, and the rotational time when shaking off the excess portion from the substrate, a substrate processing apparatus.

2. The control unit is further configured to execute a fourth process of cleaning the surface of the substrate by sequentially supplying a cleaning liquid and a rinse liquid while rotating the substrate before the third process. The apparatus according to claim 1.

3. The liquid processing unit includes a supply line configured such that a processing liquid flows therethrough, The supply line includes a tip portion connected to a discharge nozzle from which the processing liquid is discharged, The measuring unit is configured to measure the temperature of the processing liquid flowing through the tip portion. The apparatus according to claim 2.

4. The apparatus according to any one of claims 1 to 3, wherein the processing liquid supplied to the substrate is isopropyl alcohol.

5. The apparatus according to any one of claims 1 to 4, wherein the drying unit is configured to dry the substrate on which the liquid film is formed by supercritical treatment.

6. The apparatus further comprises a weighing unit configured to measure weight, and the control unit is configured to, after the third process, perform a fifth process of measuring the weight of the substrate in a state where a liquid film is formed on the surface in the third process by the weighing unit, a sixth process of calculating the liquid volume of the liquid film formed on the surface of the substrate based on the weight measured in the fifth process, and a seventh process of correcting the processing conditions set in the subsequent processing of the substrate based on the difference between the liquid volume calculated in the sixth process and a predetermined reference value. The apparatus according to any one of claims 1 to 5.

7. The apparatus according to claim 6, wherein the control unit is further configured to perform an eighth process of stopping the processing of the substrate without performing the seventh process when the liquid volume calculated in the sixth process is outside a predetermined target range.

8. A first step of constructing a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate in the liquid processing unit and the liquid volume of the liquid film formed on the surface of the substrate by supplying the processing liquid to the substrate; a second step of measuring the temperature of the processing liquid before being supplied to the substrate in the liquid processing unit by a measuring unit; a third step of calculating a predicted liquid volume of the liquid film formed on the surface of the substrate in the liquid processing unit based on the liquid film model and the temperature measured by the measuring unit; a fourth step of setting processing conditions such that the predicted liquid volume calculated in the third step is obtained; a fifth step of supplying the processing liquid while rotating the substrate in the liquid processing unit based on the processing conditions set in the fourth step to form a liquid film on the surface of the substrate; a sixth step of drying the substrate on which the liquid film is formed in the drying unit after the fifth step, wherein the fifth step includes supplying the processing liquid while rotating the substrate to spread the processing liquid on the surface of the substrate. Excluding shaking off the excess portion of the processing liquid supplied to the surface of the substrate from the substrate after the supply of the processing liquid to the substrate has stopped, while increasing the rotational speed of the substrate at a predetermined rotational acceleration so that the amount of liquid in the liquid film formed on the surface of the substrate becomes the predicted liquid amount until the rotational speed of the substrate reaches a predetermined target rotational speed, and starting to decrease the rotational speed of the substrate after a predetermined rotational time has elapsed. The fourth step includes setting the processing conditions based on a processing condition model representing the relationship between the processing conditions when shaking off the excess portion from the substrate and the amount of liquid in the liquid film formed on the surface of the substrate, and the predicted liquid amount calculated in the third step. The processing conditions are the target rotational speed, the rotational acceleration, and the rotational time when shaking off the excess portion from the substrate, and it is a substrate processing method.

9. The method according to claim 8, further comprising a seventh step of sequentially supplying a cleaning liquid and a rinsing liquid while rotating the substrate to clean the surface of the substrate before the fifth step.

10. The liquid processing unit includes a supply line configured such that the processing liquid flows therethrough. The supply line includes a tip portion connected to a discharge nozzle from which the processing liquid is discharged. The method according to claim 9, wherein the measuring unit is configured to measure the temperature of the processing liquid flowing through the tip portion.

11. The method according to any one of claims 8 to 10, wherein the processing liquid supplied to the substrate is isopropyl alcohol.

12. The method according to any one of claims 8 to 11, wherein the drying processing unit is configured to dry the substrate on which the liquid film is formed by supercritical processing.

13. After the fifth step and before the sixth step, an eighth step of measuring the weight of the substrate in a state where a liquid film is formed on the surface in the fifth step by a weighing unit, a ninth step of calculating the amount of liquid in the liquid film formed on the surface of the substrate based on the weight measured in the eighth step, The method according to any one of claims 8 to 12, further comprising a tenth step of correcting the processing conditions set for the subsequent processing of the substrate based on the difference between the amount of liquid calculated in the ninth step and a predetermined reference value.

14. The method according to claim 13, further comprising an eleventh step of stopping the processing of the substrate without executing the tenth step when the liquid amount calculated in the ninth step is outside a predetermined target range.

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