Light-emitting element-thin film transistor integration structure

Abstract

The light emitting device-thin film transistor integration structure may include a substrate including a light emitting region and a driving region, a metal reflective film formed on the substrate, a buffer layer formed on the metal reflective film, a light emitting device disposed in the light emitting region, a protective layer formed on the light emitting device, a thin film transistor disposed in the driving region and driving the light emitting device, and an ohmic contact metal electrically connecting a cathode electrode of the light emitting device and the metal reflective film. The light emitting device and the thin film transistor may be integrally formed on the substrate.

Description

Technical Field

[0001] The present invention relates to an integration structure of a light-emitting element - thin film transistor and a method for manufacturing the integration structure of a light-emitting element - thin film transistor. More specifically, the present invention relates to an integration structure of a light-emitting element - thin film transistor including a metal reflective film at the bottom, in which a transfer process is omitted in the manufacturing process, and a method for manufacturing the integration structure of a light-emitting element - thin film transistor.

Background Art

[0002] Conventionally, as typical techniques for forming a semiconductor thin film of a light-emitting element having an integration structure of a light-emitting element - thin film transistor, there are a MOCVD (Metal Organic CVD) method, an MBE (Molecular Beam Epitaxy) method, etc. In order to obtain a semiconductor thin film by such a method, the temperature of the substrate must be maintained in a state heated to about 1,000 to 1,100 °C.

[0003] As a result, the substrate on which the semiconductor thin film of the light-emitting element having the integration structure of the light-emitting element - thin film transistor is formed is limited to single-crystal sapphire (Al2O3), silicon (Si), silicon carbide (SiC), etc., which have a relatively high deformation temperature.

[0004] However, in the case of a sapphire substrate, it is difficult to produce a large-area wafer of 6 inches or more, and the production cost is high. Therefore, it is difficult to realize a large-area display such as a large TV.

[0005] Also, in the case of a sapphire substrate, problems such as deterioration due to distortion of the substrate itself caused by thermal expansion of the substrate may occur, and damage to the thin film due to the difference in lattice constant and thermal expansion coefficient between the semiconductor thin film formed on the substrate and the substrate may become a problem.

[0006] In particular, when growing a semiconductor thin film on a single crystal sapphire substrate using the MOCVD method, for example, in the manufacturing process of a micro LED display, a process of transferring a light-emitting element to a second substrate such as a glass substrate is essential.

[0007] When transfer of the light-emitting element is necessary, since the fabrication and transfer processes of the light-emitting element are costly, the production cost of the display increases significantly. As a result, the production cost of a large TV using a light-emitting element such as a micro LED increases.

[0008] In addition, in a conventional integrated structure of a light-emitting element and a thin-film transistor, light generated from the light-emitting element travels in all directions, so there is a problem that the light is reabsorbed inside the light-emitting element and converted into thermal energy. That is, in a conventional integrated structure of a light-emitting element and a thin-film transistor, only a part of the light generated from the light-emitting element escapes outside the element, and there is a problem that the light extraction efficiency is low.

[0009] To solve such problems, a technique for improving the light extraction efficiency using a DBR mirror (Korean Patent Application Publication No. 10-2007-0094344) has been disclosed. However, in such a technique using a DBR mirror, since a process of laminating the DBR mirror is added, there is a problem that the manufacturing process becomes complicated and the manufacturing cost increases.

[0010] Therefore, there is a need for a technique capable of manufacturing an integrated structure of a light-emitting element and a thin-film transistor in which a semiconductor thin film is directly grown on a substrate without a transfer process and the light extraction efficiency is increased by including a metal reflective film at the bottom. Summary of the Invention Problems to be Solved by the Invention

[0011] One object of the present invention is to provide a light-emitting element-thin film transistor integration structure that can be directly fabricated on a substrate without a transfer process.

[0012] Another object of the present invention is to provide a light emitting element-thin film transistor integrated substrate, and a light emitting element-thin film transistor integrated structure that can be collectively manufactured on a substrate by using the thin film transistor-light emitting element integrated substrate.

[0013] Another object of the present invention is to provide a light emitting device-thin film transistor integration structure that includes a metal reflective film on an upper portion of a substrate, and that can increase the amount of light emitted to the upper end of the light emitting device and the light extraction efficiency by extracting light generated in an emission layer of the light emitting device to the upper portion using the metal reflective film.

[0014] It is yet another object of the present invention to provide a light emitting device-thin film transistor integration structure in which additional energy is provided during a thin film growth process using a physical vapor deposition method in a manufacturing process, thereby reducing the growth temperature of a semiconductor thin film compared to existing processes.

[0015] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and can be variously expanded within the scope of the present invention. [Means for solving the problem]

[0016] To achieve one object of the present invention, an integration structure of a light-emitting element - thin film transistor according to an embodiment of the present invention includes a substrate including a light-emitting region and a driving region, a metal reflective film formed on the substrate, a buffer layer formed on top of the metal reflective film, a light-emitting element disposed in the light-emitting region, a protective layer formed on the light-emitting element, a thin film transistor disposed in the driving region and driving the light-emitting element, and an ohmic contact metal electrically connecting a cathode electrode of the light-emitting element and the metal reflective film. The light-emitting element and the thin film transistor may be integrally formed on the substrate.

[0017] In one embodiment, an active layer of the thin film transistor may be disposed lower than a light-emitting layer of the light-emitting element.

[0018] In one embodiment, a source thin film of the thin film transistor can block light emitted from the light-emitting element from flowing into the active layer of the thin film transistor.

[0019] In one embodiment, the active layer of the thin film transistor may be an oxide semiconductor including at least one of amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, and InGaZnO-based materials.

[0020] In one embodiment, an integration structure of a light-emitting element - thin film transistor may be manufactured in a process including a step of forming a metal reflective film on a substrate, a step of forming a buffer layer on top of the metal reflective film, a step of forming a light-emitting element in a light-emitting region on top of the substrate, a step of forming a protective layer on top of the light-emitting element, a step of forming a thin film transistor in a driving region on top of the substrate, and a step of electrically connecting a cathode electrode of the light-emitting element and the metal reflective film using an ohmic contact metal.

[0021] In one embodiment, the light-emitting element and the thin-film transistor may be integrally manufactured using a light-emitting element-thin-film transistor integrated substrate. The light-emitting element-thin-film transistor integrated substrate may have the substrate, the metal reflective film, the buffer layer, the light-emitting element layer, the protective layer, and the thin-film transistor layer sequentially stacked thereon.

[0022] In one embodiment, the integration structure of the light-emitting element-thin-film transistor may be manufactured by a process including the steps of manufacturing the light-emitting element-thin-film transistor integrated substrate, etching the thin-film transistor layer to expose the light-emitting element layer, forming a light-blocking film, forming a gate of the thin-film transistor, forming a TCO on top of the light-emitting element layer, forming an insulating protective film between the TCO and the thin-film transistor, forming a source thin film and a drain thin film of the thin-film transistor, and electrically connecting a cathode electrode of the light-emitting element and the metal reflective film using an ohmic contact metal.

[0023] In one embodiment, the light-emitting element and the thin-film transistor may be integrally manufactured using a light-emitting element-thin-film transistor integrated substrate. The light-emitting element-thin-film transistor integrated substrate may have the substrate, the metal reflective film, the buffer layer, the light-emitting element layer, the TCO, the protective layer, and the thin-film transistor layer sequentially stacked thereon.

[0024] In one embodiment, the metal reflective film includes at least one of Ag and Al, and by reflecting light generated from the light-emitting element, the light extraction efficiency of the light-emitting element can be increased.

[0025] In one embodiment, the semiconductor thin film of the light-emitting element can be grown at low temperature by supplying additional energy to physical vapor deposition and chemical vapor deposition methods. The substrate may be at least one of a glass substrate, a stainless-steel substrate, and a polymer substrate.

[0026] In one embodiment, the physical vapor deposition method can use at least one of a sputtering method, an e-beam evaporation method, and a thermal evaporation method.

[0027] In one embodiment, the additional energy can use at least one of an ion beam, an electron beam, a plasma, ultraviolet light, a laser, and LED light.

[0028] To achieve other objects of the present invention, an integrated structure of a light-emitting element and a thin-film transistor according to an embodiment of the present invention includes a substrate including a light-emitting region and a driving region, a protective layer formed on the substrate, a thin-film transistor disposed in the driving region and driving the light-emitting element, a metal reflective film formed on the thin-film transistor, a light-emitting element disposed in the light-emitting region, and a TCO formed on the light-emitting element. The thin-film transistor and the light-emitting element may be integrally formed on the substrate.

[0029] In one embodiment, the light-emitting element and the thin-film transistor may be manufactured in a batch using a thin-film transistor-light-emitting element integrated substrate. The thin-film transistor-light-emitting element integrated substrate may have the substrate, the protective layer, a thin-film transistor layer, the metal reflective film, a light-emitting element layer, and the TCO sequentially laminated thereon.

[0030] In one embodiment, the integrated structure of the light-emitting element and the thin-film transistor may be manufactured in a process including steps of manufacturing the thin-film transistor-light-emitting element integrated substrate, etching the light-emitting element layer to expose the thin-film transistor layer, etching the metal reflective film, forming an insulating protective film on the TCO and the light-emitting element, exposing the upper portion of the TCO, etching GI, depositing a metal thin film, and forming a gate, a source thin film, and a drain thin film of the thin-film transistor.

Effects of the Invention

[0031] The integrated structure of a light-emitting element and a thin-film transistor according to an embodiment of the present invention can be directly fabricated on a substrate without a transfer process.

[0032] In addition, the integrated structure of a light-emitting element and a thin-film transistor can be mass-produced on a substrate by using a light-emitting element-thin-film transistor integrated substrate and a thin-film transistor-light-emitting element integrated substrate.

[0033] In addition, the integrated structure of a light-emitting element and a thin-film transistor includes a metal reflective film on the upper part of the substrate. By using the metal reflective film to extract the light generated in the light-emitting layer of the light-emitting element upward, the amount of light emitted from the upper end of the light-emitting element and the light extraction efficiency can be increased.

[0034] In addition, in the manufacturing process of the integrated structure of a light-emitting element and a thin-film transistor, additional energy is provided in the thin-film growth process using a physical vapor deposition method. Therefore, compared with the existing process, the growth temperature of the semiconductor thin film can be reduced. Accordingly, the integrated structure of a light-emitting element and a thin-film transistor can use a glass substrate, a stainless-steel substrate, and a polymer substrate with a deformation temperature of 650 degrees Celsius (°C) or less.

[0035] However, the effects of the present invention are not limited to the above-described effects and can be variously extended without departing from the spirit and scope of the present invention.

Brief Description of the Drawings

[0036]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

[0037] Specific structural or functional descriptions of embodiments in accordance with the inventive concepts disclosed herein are provided solely for purposes of illustrating embodiments in accordance with the inventive concepts, which may be embodied in various forms and are not limited to the embodiments described herein.

[0038] Examples according to the concept of the present invention can be modified in various ways and can have various forms. Therefore, the examples are illustrated in the drawings and will be described in detail herein. However, this is not intended to limit the examples according to the concept of the present invention to a specific disclosed form, but includes modifications, equivalents, or alternatives included in the spirit and technical scope of the present invention.

[0039] Terms such as "first" or "second" can be used to describe various components, but the components should not be limited by these terms. These terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the rights according to the concept of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component.

[0040] When it is mentioned that a certain component is "connected to" or "attached to" another component, it should be understood that it may be directly connected or attached to the other component, but there may also be other components between these components. On the contrary, when it is mentioned that a certain component is "directly connected to" or "directly attached to" another component, it should be understood that there are no other components between these components. Expressions for explaining the relationship between components, such as "between", "immediately between", or "directly adjacent to", should be interpreted in the same way.

[0041] The terms used herein are merely used to describe specific examples and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "including" or "having" are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0042] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the technical field to which the present invention pertains. Terms defined as in a commonly used dictionary shall be interpreted to have a meaning consistent with the meaning in the context of the related art and shall not be interpreted in an idealized or overly formal sense unless clearly defined herein.

[0043] FIG. 1 is a cross-sectional view showing an integration structure 10 of a light-emitting element - thin film transistor according to an embodiment of the present invention, and FIG. 2 is a flowchart showing a manufacturing method of the integration structure 10 of the light-emitting element - thin film transistor of FIG. 1.

[0044] Referring to FIG. 1, the integration structure 10 of the light-emitting element - thin film transistor of the present invention may include a substrate 100, a metal reflective film 200, a buffer layer 300, a light-emitting element 400, a protective layer 500, a thin film transistor 600, and an ohmic contact metal 700.

[0045] Specifically, the integration structure 10 of the light-emitting element - thin film transistor may include a substrate 100 including a light-emitting region and a driving region, a metal reflective film 200 formed on the substrate 100, a buffer layer 300 formed on the upper portion of the metal reflective film 200, a light-emitting element 400 disposed in the light-emitting region, a protective layer 500 formed on the light-emitting element 400, a thin film transistor 600 disposed in the driving region and driving the light-emitting element 400, and an ohmic contact metal 700 electrically connecting the cathode electrode of the light-emitting element 400 and the metal reflective film 200.

[0046] For example, the light-emitting element 400 and the thin film transistor 600 may be integrally formed on the substrate 100.

[0047] Referring to FIG. 2, the integration structure 10 of a light-emitting element - thin film transistor according to an embodiment of the present invention can be manufactured through the steps of: forming a metal reflection film 200 on a substrate 100 (S110); forming a buffer layer 300 on top of the metal reflection film 200 (S120); forming a light-emitting element 400 in a light-emitting region on top of the substrate 100 (S130); forming a protective layer 500 on top of the light-emitting element 400 (S140); forming a thin film transistor 600 in a driving region on top of the substrate 100 (S150); and electrically connecting a cathode electrode of the light-emitting element 400 and the metal reflection film 200 using an ohmic contact metal 700 (S160).

[0048] The integration structure 10 of the light-emitting element - thin film transistor of the present invention can be directly fabricated on the substrate 100 without a transfer process.

[0049] Also, in the integration structure 10 of the light-emitting element - thin film transistor, by arranging the active layer 610 of the thin film transistor 600 lower than the light-emitting layer 420 of the light-emitting element 400, the leakage current generated in the thin film transistor 600 by the light emitted from the light-emitting element 400 can be reduced.

[0050] Moreover, the integration structure 10 of the light-emitting element - thin film transistor includes a metal reflection film 200 on top of the substrate 100. By using the metal reflection film 200 to extract the light generated in the light-emitting layer 420 of the light-emitting element 400 upward, the amount of light emitted to the upper end of the light-emitting element 400 and the light extraction efficiency can be increased.

[0051] Hereinafter, specific features of the integration structure 10 of the light-emitting element - thin film transistor of the present invention will be described with reference to FIGS. 3 to 9.

[0052] FIG. 3 is a diagram showing that the substrate 100, the metal reflection film 200, and the buffer layer 300 are formed by the manufacturing method of FIG. 2.

[0053] Referring to FIGS. 1, 2 and 3, the integration structure 10 of a light-emitting element - thin film transistor according to an embodiment of the present invention can be manufactured through a step of forming a metal reflective film 200 on a substrate 100 (S110), and a step of forming a buffer layer 300 on the upper part of the metal reflective film 200 (S120).

[0054] For example, the metal reflective film 200 may be composed of at least one of Ag and Al.

[0055] The light generated from the light-emitting element 400 can be reflected by the metal reflective film 200, and the light extraction efficiency of the light-emitting element 400 can be increased.

[0056] For example, the metal reflective film 200 can reflect the light generated in the light-emitting layer 420 of the light-emitting element 400 and extract it upward.

[0057] Therefore, the integration structure 10 of the light-emitting element - thin film transistor can increase the amount of light emitted to the upper end of the light-emitting element 400 and the light extraction efficiency by reflecting the light generated from the light-emitting element 400 using the metal reflective film 200.

[0058] The integration structure 10 of the light-emitting element - thin film transistor can include a buffer layer 300 disposed between the light-emitting element 400 and the metal reflective film 200.

[0059] The buffer layer 300 can be a layer for facilitating the deposition of the semiconductor thin film of the light-emitting element 400.

[0060] For example, the buffer layer 300 can help the semiconductor layer of the light-emitting element 400 to have a single crystal plane.

[0061] In one embodiment, the buffer layer 300 may be composed of at least one of aluminum nitride and zinc oxide.

[0062] FIG. 4 is a diagram showing that a light-emitting element 400 is formed by the manufacturing method of FIG. 2, and FIG. 5 is a flowchart showing an example of the formation of the light-emitting element 400 of FIG. 4.

[0063] Referring to FIGS. 1 to 5, the integration structure 10 of a light-emitting element - thin film transistor according to an embodiment of the present invention can be manufactured through step S130 of forming a light-emitting element 400 in a light-emitting region on the upper part of the substrate 100.

[0064] The light-emitting element 400 can include a first semiconductor layer 410, a light-emitting layer 420, and a second semiconductor layer 430. The first semiconductor layer 410 can be an n-type semiconductor layer. The light-emitting layer 420 can be an active layer. The second semiconductor layer 430 can be a p-type semiconductor layer.

[0065] For example, the light-emitting layer 420 can generate light when electrons supplied from the first semiconductor layer 410 and holes supplied from the second semiconductor layer 430 are combined.

[0066] As a typical conventional technique for depositing the semiconductor layers of the light-emitting element 400, there are a MOCVD (Metal Organic CVD) method, an MBE (Molecular Beam Epitaxy) method, and the like. In order to deposit the semiconductor layers by such a method, the temperature of the substrate 100 has to be maintained in a heated state at about 1,000 degrees (°C) to 1,100 degrees (°C).

[0067] Therefore, when using the MOCVD (Metal Organic CVD) method or the MBE (Molecular Beam Epitaxy) method, the substrate 100 on which the semiconductor thin film is formed is limited to single crystal sapphire (Al2O3), silicon (Si), silicon carbide (SiC), etc. having a relatively high deformation temperature.

[0068] However, since it is difficult to produce large-area wafers of 12 inches or more with these substrates 100 and the production cost per unit is high, it is difficult to realize a large-area display such as a large TV.

[0069] In addition, when growing a semiconductor thin film on the sapphire substrate 100, in the manufacturing process of a micro LED, since a transfer process of transferring the light-emitting element 400 to the glass substrate 100 is essential, there is a problem that the production cost of the micro LED increases significantly due to the transfer process.

[0070] In order to solve such a problem, the semiconductor thin film of the light-emitting element 400 of the present invention can be grown at a low temperature by supplying additional energy to the physical vapor deposition method and the chemical vapor deposition method.

[0071] For example, as shown in FIG. 5, the step of forming the light-emitting element 400 may include a step of growing (S131) the semiconductor thin film of the light-emitting element 400 by a physical vapor deposition method, and a step of supplying (S132) additional energy to the substrate 100 during the semiconductor thin film growth process.

[0072] Specifically, the physical vapor deposition method used in the thin film growth process may be at least one of a sputtering method, an e-beam evaporation method, and a thermal evaporation method.

[0073] The additional energy supplied to the substrate 100 in the thin film growth process step may be at least one of an ion beam, an electron beam, a plasma, ultraviolet light, a laser, and LED light.

[0074] For example, in the integrated structure 10 of the light-emitting element - thin film transistor of the present invention, a sputtering ion beam is provided during the thin film growth process, and a part of the energy required for the deposition of the semiconductor layer is provided as the kinetic energy of the ion beam, so that the growth temperature of the semiconductor thin film can be reduced compared with the existing process.

[0075] In one embodiment, at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), and ammonia (NH3) may be used for the ion beam sputtering.

[0076] In one embodiment, the sputtering target used for the ion beam sputtering may include gallium (Ga) or gallium nitride (GaN).

[0077] When the thin film deposition process of the semiconductor layer is performed at a relatively low temperature, the range of the substrate 100 that can be used in the manufacturing process can be expanded.

[0078] For example, the substrate 100 may be an amorphous substrate or a polycrystalline substrate.

[0079] For example, the substrate 100 may be at least one of a glass substrate, a stainless steel substrate, and a polymer substrate having a deformation temperature of 650 degrees Celsius (°C) or less.

[0080] Thus, when the manufacturing process of the semiconductor layer of the light emitting element 400 is performed at a relatively low temperature and the range of the substrate 100 that can be used in the manufacturing process is expanded, a metal reflective film 200 may be formed on the substrate 100.

[0081] For example, in the integration structure 10 of a light emitting element - thin film transistor, a silver (Ag) reflective film or an aluminum (Al) reflective film may be formed on the glass substrate 100.

[0082] When using ion beam sputtering to grow a semiconductor thin film having a single crystal plane from a thin film growth step, the production process of the integration structure 10 of the light emitting element - thin film transistor can be simplified, and the manufacturing cost of the integration structure 10 of the light emitting element - thin film transistor can be reduced.

[0083] Also, when ion beam sputtering is used, the nitride semiconductor layer can be deposited on a glass substrate 100 having a transformation temperature of 650 degrees Celsius (°C) or less. When the nitride semiconductor layer is directly deposited on the glass substrate 100, unlike the case where the nitride semiconductor layer is deposited on the sapphire substrate 100, the light-emitting element 400 can be directly manufactured on the backplane.

[0084] Thus, when depositing a semiconductor layer using ion beam sputtering, the steps of fabricating a light-emitting element chip and transferring the light-emitting element in the production process of a micro LED display can be omitted.

[0085] Therefore, when applying the present invention, since the production cost due to the steps of fabricating and transferring the light-emitting element chip is reduced, the manufacturing cost of a large-sized display including micro LEDs, such as a large-area 4K Micro-light-emitting element TV, can be significantly reduced.

[0086] FIG. 6 is a diagram showing that the protective layer 500 is formed by the manufacturing method of FIG. 2.

[0087] Referring to FIGS. 1, 2, and 6, the integration structure 10 of a light-emitting element - thin film transistor according to an embodiment of the present invention can be manufactured through step S140 of forming a protective layer 500 on the light-emitting element 400.

[0088] In the integration structure 10 of a light-emitting element - thin film transistor, the protective layer 500 can serve as an insulating layer. Also, the protective layer 500 can serve as a planarization layer.

[0089] The protective layer 500 may be composed of an organic substance such as PAC (Photo Acryl Compound). Also, the protective layer 500 may be composed of an inorganic substance such as SiO2 or SiNx.

[0090] The protective layer 500 may be formed as a single layer. Also, the protective layer 500 may be formed as multiple layers.

[0091] FIG. 7 is a diagram showing that the thin film transistor 600 is formed by the manufacturing method of FIG. 2.

[0092] Referring to FIGS. 1, 2, and 7, the integration structure 10 of the light emitting element - thin film transistor can be manufactured through step S150 of forming the thin film transistor 600 in the driving region above the substrate 100.

[0093] The thin film transistor 600 can include an active layer 610, a gate 620, a source thin film 630, and a drain thin film 640.

[0094] The active layer 610 of the thin film transistor 600 may be an oxide semiconductor including at least one of amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, and InGaZnO - based materials.

[0095] In one embodiment, the active layer 610 of the thin film transistor 600 may be disposed lower than the light emitting layer 420 of the light emitting element 400.

[0096] For example, in the integration structure 10 of the light emitting element - thin film transistor of the present invention, the light emitted from the light emitting element 400 can be prevented from flowing into the thin film transistor 600 by disposing the active layer 610 of the thin film transistor 600 lower than the light emitting layer 420 of the light emitting element 400.

[0097] Also, the source thin film 630 of the thin film transistor 600 can block the light emitted from the light emitting element 400 from flowing into the active layer 610 of the thin film transistor 600.

[0098] For example, in the integration structure 10 of the light emitting element - thin film transistor of the present invention, the light generated from the light emitting element 400 can be blocked from flowing into the active layer 610 of the thin film transistor 600 by forming the source thin film 630 of the thin film transistor 600 high.

[0099] In this way, the light emitting device-thin film transistor integration structure 10 can reduce leakage current generated in the thin film transistor 600 due to light emitted from the light emitting device 400 by positioning the active layer 610 of the thin film transistor 600 lower than the light emitting layer 420 of the light emitting device 400.

[0100] FIG. 8 is a diagram showing that the cathode electrode of the light emitting element 400 and the metal reflective film 200 are electrically connected by the manufacturing method of FIG.

[0101] 1, 2 and 8, the light emitting device-thin film transistor integration structure 10 can be manufactured through step S160 of electrically connecting the cathode electrode of the light emitting device 400 and the metal reflective film 200 using ohmic contact metal 700.

[0102] As shown in FIG. 8, the ohmic contact metal 700 can electrically connect the cathode electrode and the metal reflective film 200 .

[0103] For example, the cathode electrode of the light-emitting element 400 may be connected to the first semiconductor layer 410 via an N-GaN ohmic contact metal 700. The cathode electrode of the light-emitting element 400 may be connected to the metal reflective film 200 via a contact hole (VIA).

[0104] For example, the cathode electrode may be made of at least one of Ag and Al, the same as the metal reflective film 200, or may be made of a different type of metal than the metal reflective film 200.

[0105] For example, the cathode electrode of the light emitting device 400 is electrically connected to the metal reflective film 200 through the ohmic contact metal 700, so that the metal reflective film 200 can be used as a common negative electrode.

[0106] Therefore, by using the metal reflective film 200 as a common negative electrode, the light-emitting element - thin film transistor integration structure 10 can improve the electrical characteristics of the light-emitting element 400, simplify the manufacturing process of the light-emitting element - thin film transistor integration structure 10, and reduce the manufacturing cost of the light-emitting element - thin film transistor integration structure 10.

[0107] FIG. 9 is a diagram showing that a gate line and a data line are connected to the thin film transistor 600.

[0108] As shown in FIG. 9, the source thin film 630 of the thin film transistor 600 can be connected to the data line. The gate 620 of the thin film transistor 600 can be connected to the gate line.

[0109] For example, the light-emitting element - thin film transistor integration structure 10 can output a target light by being connected to a data line and a gate line and receiving an applied data voltage and gate voltage.

[0110] FIG. 10 is a cross-sectional view showing the light-emitting element - thin film transistor integration structure 10 according to another embodiment of the present invention, and FIG. 11 is a flowchart showing the manufacturing method of the light-emitting element - thin film transistor integration structure 10 of FIG. 10.

[0111] Referring to FIG. 10, the light-emitting element - thin film transistor integration structure 10 of the present invention can include a substrate 100, a metal reflective film 200, a buffer layer 300, a light-emitting element 400, a protective layer 500, a thin film transistor 600, and an ohmic contact metal 700.

[0112] Specifically, the integration structure 10 of the light-emitting element - thin film transistor may include a substrate 100 including a light-emitting region and a driving region, a metal reflection film 200 formed on the substrate 100, a buffer layer 300 formed on top of the metal reflection film 200, a light-emitting element 400 disposed in the light-emitting region, a protective layer 500 formed on the light-emitting element 400, a thin film transistor 600 disposed in the driving region for driving the light-emitting element 400, and an ohmic contact metal 700 for electrically connecting the cathode electrode (Cathode) of the light-emitting element 400 and the metal reflection film 200.

[0113] For example, the light-emitting element 400 and the thin film transistor 600 may be integrally formed on the substrate 100.

[0114] In one embodiment, the light-emitting element 400 and the thin film transistor 600 may be batch-produced using a light-emitting element - thin film transistor integrated substrate.

[0115] For example, in the light-emitting element - thin film transistor integrated substrate, the substrate 100, the metal reflection film 200, the buffer layer 300, a light-emitting element layer, the protective layer 500, and a thin film transistor layer may be sequentially laminated.

[0116] Referring to FIG. 11, the integration structure 10 of the light-emitting element - thin film transistor can be manufactured through the steps of manufacturing the light-emitting element - thin film transistor integrated substrate (S210), etching the thin film transistor layer (S220), forming an anti-reflection film LB (S230), forming a gate 620 of the thin film transistor 600 (S240), forming a TCO on top of the light-emitting element layer (S250), forming an insulating protection film DP between the TCO and the thin film transistor 600 (S260), forming a source thin film 630 and a drain thin film 640 of the thin film transistor 600 (S270), and electrically connecting the cathode electrode of the light-emitting element 400 and the metal reflection film 200 using the ohmic contact metal 700 (S280).

[0117] The integrated structure 10 of the light-emitting element - thin film transistor of the present invention can be directly fabricated on the substrate 100 without a transfer process.

[0118] Also, the integrated structure 10 of the light-emitting element - thin film transistor can be mass-produced on the substrate 100 by using an integrated substrate of the light-emitting element - thin film transistor.

[0119] Also, the integrated structure 10 of the light-emitting element - thin film transistor includes a metal reflective film 200 on the upper part of the substrate 100. By using the metal reflective film 200 to extract the light generated in the light-emitting layer 420 of the light-emitting element 400 upward, the amount of light emitted from the upper end of the light-emitting element 400 and the light extraction efficiency can be increased.

[0120] Hereinafter, the specific features of the integrated structure 10 of the light-emitting element - thin film transistor of the present invention will be described with reference to FIGS. 12 to 19.

[0121] FIG. 12 is a diagram showing that an integrated substrate of a light-emitting element - thin film transistor is manufactured by the manufacturing method of FIG. 11.

[0122] Referring to FIGS. 10, 11, and 12, the integrated structure 10 of the light-emitting element - thin film transistor can be manufactured through step S210 of manufacturing the integrated substrate of the light-emitting element - thin film transistor.

[0123] The integrated substrate of the light-emitting element - thin film transistor may have the substrate 100, the metal reflective film 200, the buffer layer 300, the light-emitting element layer, the protective layer 500, and the thin film transistor layer sequentially laminated thereon.

[0124] Here, the light-emitting element layer can become the light-emitting element 400 through the process according to the manufacturing method of FIG. 11. Also, the thin film transistor layer can become the thin film transistor 600 through the process according to the manufacturing method of FIG. 11.

[0125] The light-emitting element-thin film transistor integrated substrate can be manufactured in advance before the manufacturing process of the integration structure 10 of the light-emitting element-thin film transistor.

[0126] For example, the integration structure 10 of the light-emitting element-thin film transistor can be manufactured collectively on the substrate 100 without distinguishing the manufacturing process of the thin film transistor 600 and the manufacturing process of the light-emitting element 400 by being manufactured by the manufacturing method shown in FIG. 11 based on the pre-manufactured light-emitting element-thin film transistor integrated substrate.

[0127] FIG. 13 is a diagram showing that the thin film transistor layer is etched by the manufacturing method shown in FIG. 11.

[0128] Referring to FIGS. 10, 11, and 13, the integration structure 10 of the light-emitting element-thin film transistor can be manufactured through the step S220 of etching the thin film transistor layer.

[0129] The thin film transistor layer can include the active layer 610 and the gate insulator GI of the thin film transistor 600.

[0130] The thin film transistor layer can be etched to expose the light-emitting element layer.

[0131] For example, in order to form the thin film transistor 600 on the driving region, the portion of the thin film transistor layer excluding the driving region can be etched.

[0132] Here, a part of the protective layer 500 can be etched together with the thin film transistor layer.

[0133] FIG. 14 is a diagram showing that the light-blocking film LB is formed by the manufacturing method shown in FIG. 11.

[0134] Referring to FIGS. 10, 11, and 14, the light-emitting element-thin film transistor integration structure 10 can be manufactured through step S230 of forming the light-blocking film LB.

[0135] The light-blocking film LB can prevent the light emitted from the light-emitting element 400 from flowing into the thin film transistor 600.

[0136] For example, the light-blocking film LB is formed in a form that traverses the light-emitting layer 420 of the light-emitting element layer in the vertical direction, so that the light generated from the light-emitting element 400 can be blocked from flowing into the active layer 610 of the thin film transistor 600.

[0137] For example, a thin insulating film may be added to the edge of the light-blocking film LB.

[0138] Thus, the light-emitting element-thin film transistor integration structure 10 can reduce the leakage current generated in the thin film transistor 600 by the light emitted from the light-emitting element 400 by including the light-blocking film LB.

[0139] FIG. 15 is a diagram showing that the gate 620 of the thin film transistor 600 is formed by the manufacturing method of FIG. 11.

[0140] Referring to FIGS. 10, 11, and 15, the light-emitting element-thin film transistor integration structure 10 can be manufactured through step S240 of forming the gate 620 of the thin film transistor 600.

[0141] For example, the gate 620 may be formed by patterning the gate insulator GI of the thin film transistor layer.

[0142] The gate 620 is connected to the gate line and can receive an applied gate voltage.

[0143] FIG. 16 is a diagram showing that a TCO is formed on the upper part of the light-emitting element layer by the manufacturing method of FIG. 11.

[0144] Referring to FIGS. 10, 11, and 16, the integration structure 10 of the light-emitting element-thin film transistor can be manufactured through step S250 of forming a TCO on the upper part of the light-emitting element layer.

[0145] For example, the TCO may be formed in the light-emitting region on the upper part of the light-emitting element layer.

[0146] The TCO can contain a transparent conductive material so that the light output from the light-emitting layer 420 of the light-emitting element 400 can pass through upward.

[0147] In one embodiment, the TCO can perform a p-ohmic contact function.

[0148] The light-emitting element 400 can include a first semiconductor layer 410, a light-emitting layer 420, and a second semiconductor layer 430.

[0149] Specifically, the TCO can be composed of a material having transparency so that the light source emitted from the light-emitting layer 420 of the light-emitting element 400 can be output to the outside.

[0150] For example, the TCO can contain at least one of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), ICO (Indium Cesium Oxide), IWO (Indium Tungsten Oxide), ZnO (Zinc Oxide) added with aluminum, PEDOT:PSS, polyaniline, and polythiophene.

[0151] The TCO can be electrically connected to the light-emitting element 400. For example, the TCO may be electrically connected to the second semiconductor layer 430 of the light-emitting element 400 via an ohmic electrode.

[0152] FIG. 17 is a diagram showing that an insulating protective film DP is formed between the TCO and the thin film transistor 600 by the manufacturing method of FIG. 11.

[0153] Referring to FIGS. 10, 11, and 17, the integration structure 10 of the light emitting element - thin film transistor can be manufactured through step S260 of forming an insulating protective film DP between the TCO and the thin film transistor 600.

[0154] By being formed between the TCO and the thin film transistor 600, the insulating protective film DP can prevent the light emitted from the TCO from flowing into the thin film transistor 600.

[0155] For example, the insulating protective film DP can include at least one of SiO2, TiO2, ZrO2, and Al2O3.

[0156] FIG. 18 is a diagram showing that the source thin film 630 and the drain thin film 640 of the thin film transistor 600 are formed by the manufacturing method of FIG. 11.

[0157] Referring to FIGS. 10, 11, and 18, the integration structure 10 of the light emitting element - thin film transistor can be manufactured through step S270 of forming the source thin film 630 and the drain thin film 640 of the thin film transistor 600.

[0158] The thin film transistor 600 can include an active layer 610, a gate 620, a source thin film 630, and a drain thin film 640.

[0159] For example, the source thin film 630 may be formed on the insulating protective film DP.

[0160] The source thin film 630 can electrically connect the TCO having a p - ohmic contact function and the active layer 610.

[0161] For example, the drain thin film 640 may be formed on the active layer 610.

[0162] The active layer 610 of the thin film transistor 600 may be an oxide semiconductor containing at least one of amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, and InGaZnO-based materials.

[0163] For example, the source thin film 630 of the thin film transistor 600 is connected to the data line and can receive the application of a data voltage.

[0164] FIG. 19 is a diagram showing electrically connecting the cathode electrode of the light-emitting element 400 to the metal reflective film 200 by the manufacturing method of FIG. 11.

[0165] Referring to FIGS. 10, 11, and 19, the integration structure 10 of the light-emitting element-thin film transistor can be manufactured through step S280 of electrically connecting the cathode electrode of the light-emitting element 400 and the metal reflective film 200 using the ohmic contact metal 700.

[0166] As shown in FIG. 19, the ohmic contact metal 700 can electrically connect the cathode electrode and the metal reflective film 200.

[0167] For example, the cathode electrode of the light-emitting element 400 may be connected to the first semiconductor layer 410 via the N-GaN ohmic contact metal 700. The cathode electrode of the light-emitting element 400 may be connected to the metal reflective film 200 via a contact hole (VIA).

[0168] For example, the cathode electrode may be composed of at least one of Ag and Al, the same as the metal reflective film 200, or may be composed of a different type of metal from the metal reflective film 200.

[0169] For example, by electrically connecting the cathode electrode of the light-emitting element 400 to the metal reflective film 200 via the ohmic contact metal 700, the metal reflective film 200 can be used as a common negative electrode.

[0170] That is, the integration structure 10 of the light-emitting element - thin film transistor can improve the electrical characteristics of the light-emitting element 400 by using the metal reflective film 200 as a common negative electrode.

[0171] Thus, the integration structure 10 of the light-emitting element - thin film transistor of the present invention can be batch-produced on the substrate 100 by using a light-emitting element - thin film transistor integrated substrate.

[0172] Therefore, the manufacturing process of the integration structure 10 of the light-emitting element - thin film transistor can be simplified, and the manufacturing cost of the integration structure 10 of the light-emitting element - thin film transistor can be reduced.

[0173] FIG. 20 is a diagram showing another embodiment of a light-emitting element - thin film transistor integrated substrate, and FIG. 21 is a diagram showing an integration structure 10 of a light-emitting element - thin film transistor manufactured using the light-emitting element - thin film transistor integrated substrate of FIG. 20.

[0174] Referring to FIG. 20, the light-emitting element 400 and the thin film transistor 600 can be batch-produced using a light-emitting element - thin film transistor integrated substrate.

[0175] For example, the light-emitting element - thin film transistor integrated substrate may have the substrate 100, the metal reflective film 200, the buffer layer 300, a light-emitting element layer, a TCO, the protective layer 500, and a thin film transistor layer laminated in sequence.

[0176] That is, the light-emitting element - thin film transistor integrated substrate can further include a TCO.

[0177] In this case, in the manufacturing process of the integration structure 10 of the light-emitting element-thin film transistor, since there is no need for a separate step of forming a TCO on the upper part of the light-emitting element layer, the manufacturing process of the integration structure 10 of the light-emitting element-thin film transistor can be minimized.

[0178] FIG. 22 is a diagram showing a physical vapor deposition method for forming a semiconductor thin film of the light-emitting element 400, and FIG. 23 is a diagram showing types of additional energy for forming a semiconductor thin film of the light-emitting element 400.

[0179] In one embodiment, the semiconductor thin film of the light-emitting element 400 can be grown at a low temperature by supplying additional energy to the physical vapor deposition method and the chemical vapor deposition method.

[0180] Accordingly, the substrate 100 may be at least one of a glass substrate, a stainless steel substrate, and a polymer substrate.

[0181] Referring to FIG. 22, the physical vapor deposition method can use at least one of a sputtering method, an e-beam evaporation method, and a thermal evaporation method.

[0182] Referring to FIG. 23, the additional energy can use at least one of an ion beam, an electron beam, plasma, ultraviolet light, a laser, and LED light.

[0183] Therefore, a part of the energy required for depositing the semiconductor thin film of the light-emitting element 400 can be provided not as thermal energy but as additional energy (for example, ion beam energy, plasma energy, and UV energy).

[0184] That is, the semiconductor thin film of the light-emitting element 400 can improve the mobility of atoms and molecules reaching the semiconductor thin film by supplying at least one of an ion beam, an electron beam, plasma, ultraviolet light, a laser, and an LED light source as additional energy.

[0185] For example, for the integration structure 10 of a light-emitting element - thin-film transistor, an ion beam sputtering method in which a sputtering ion beam is provided during the thin-film growth process can be used.

[0186] When ion beam sputtering is used, since part of the energy required for the deposition of the semiconductor layer is provided as the kinetic energy of the ion beam, the growth temperature of the semiconductor thin film can be lowered.

[0187] For the ion beam sputtering, at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), and ammonia (NH3) may be used.

[0188] The sputtering target used for the ion beam sputtering may contain gallium (Ga) or gallium nitride (GaN).

[0189] When the semiconductor thin film of the light-emitting element 400 is performed at a relatively low temperature, the range of the substrate 100 that can be used in the manufacturing process can be expanded.

[0190] For example, the substrate 100 may be an amorphous substrate or a polycrystalline substrate.

[0191] For example, the substrate 100 may be at least one of a glass substrate, a stainless steel substrate, and a polymer substrate whose deformation temperature is 650 degrees Celsius (°C) or lower.

[0192] FIG. 24 is a cross-sectional view showing an integration structure 10 of a light-emitting element - thin-film transistor according to another embodiment of the present invention, and FIG. 25 is a flowchart showing a manufacturing method of the integration structure 10 of the light-emitting element - thin-film transistor in FIG. 24.

[0193] Referring to FIG. 24, the integration structure 10 of a light-emitting element - thin film transistor may include a substrate 100 including a light-emitting region and a driving region, a protective layer 500 formed on the substrate 100, a thin film transistor 600 disposed in the driving region for driving the light-emitting element 400, a metal reflective film 200 formed on the thin film transistor 600, a light-emitting element 400 disposed in the light-emitting region, and a TCO formed on the light-emitting element 400.

[0194] For example, the thin film transistor 600 and the light-emitting element 400 may be integrally formed on the substrate 100.

[0195] In one embodiment, the light-emitting element 400 and the thin film transistor 600 may be manufactured in a batch using a thin film transistor - light-emitting element integrated substrate.

[0196] In particular, in the integration structure 10 of a light-emitting element - thin film transistor, the light-emitting element 400 may be formed on top of the thin film transistor 600.

[0197] Referring to FIG. 25, the integration structure 10 of a light-emitting element - thin film transistor may be manufactured through the steps of manufacturing the thin film transistor 600 - light-emitting element 400 integrated substrate (S310), etching the light-emitting element layer (S320), etching the metal reflective film 200 (S330), forming an insulating protective film DP on the TCO and the light-emitting element 400 (S340), exposing the top of the TCO (S350), etching the gate insulator GI (S360), depositing a metal thin film (S370), and forming the gate 620, source thin film 630, and drain thin film 640 of the thin film transistor 600 (S380).

[0198] FIG. 26 is a diagram showing that a light-emitting element - thin film transistor integrated substrate is manufactured by the manufacturing method of FIG. 25.

[0199] Referring to FIG. 26, for example, the thin film transistor - light emitting element integrated substrate may have the substrate 100, the protective layer 500, the thin film transistor layer, the metal reflective film 200, the light emitting element layer, and the TCO sequentially laminated thereon.

[0200] That is, different from the light emitting element - thin film transistor integrated substrate, in the thin film transistor - light emitting element integrated substrate, the light emitting element layer may be disposed on top of the thin film transistor layer.

[0201] Thereby, in the integration structure 10 of the light emitting element - thin film transistor, the light emitting element 400 may be formed on top of the thin film transistor 600.

[0202] FIG. 27 is a diagram showing the process of manufacturing the integration structure 10 of the light emitting element - thin film transistor using the light emitting element - thin film transistor integrated substrate of FIG. 26.

[0203] The step S310 of manufacturing the thin film transistor - light emitting element integrated substrate can manufacture the thin film transistor - light emitting element integrated substrate in which the substrate 100, the protective layer 500, the thin film transistor layer, the metal reflective film 200, the light emitting element layer, and the TCO are sequentially laminated.

[0204] The step S320 of etching the light emitting element layer can etch the portion of the light emitting element layer excluding the light emitting region in order to expose the thin film transistor layer.

[0205] Here, the TCO on top of the light emitting element layer may be etched together with the light emitting element layer.

[0206] The step S330 of etching the metal reflective film 200 can perform first PR patterning and dry - etch or wet - etch the metal reflective film 200.

[0207] For example, by etching the metal reflective film 200, the driving region of the thin film transistor layer can be exposed.

[0208] Step S340 of forming the insulating protection film DP on the TCO and the light-emitting element 400 can deposit the insulating protection film DP for protecting the light-emitting element 400.

[0209] For example, the insulating protection film DP can include at least one of SiO2, TiO2, ZrO2, and Al2O3.

[0210] Step S350 of exposing the upper portion of the TCO can perform a second PR patterning and expose the upper portion of the TCO by dry etching or wet etching.

[0211] The TCO can be composed of a transparent substance so that the light source emitted from the light-emitting layer 420 of the light-emitting element 400 can be output to the outside.

[0212] Therefore, the light output from the light-emitting layer 420 of the light-emitting element 400 can pass through the upper portion of the exposed TCO.

[0213] Step S360 of etching the gate insulator can perform a third PR patterning and dry-etch or wet-etch the gate insulator GI.

[0214] Step S370 of depositing a metal thin film can form a metal thin film for electrically connecting the light-emitting element 400 and the thin-film transistor 600 by depositing a metal substance.

[0215] Step S380 of forming the gate 620, source thin film 630, and drain thin film 640 of the thin-film transistor 600 can perform a fourth PR patterning and electrode patterning to form the gate 620, source thin film 630, and drain thin film 640.

[0216] Thus, the integration structure 10 of the light-emitting element - thin-film transistor according to the embodiment of the present invention can be directly fabricated on the substrate 100 without a transfer process.

[0217] Also, the integration structure 10 of the light-emitting element - thin-film transistor can be mass-produced on the substrate 100 by using a thin-film transistor - light-emitting element integrated substrate.

[0218] Further, the integration structure 10 of the light-emitting element - thin-film transistor includes a metal reflective film 200 on the upper part of the substrate 100. By using the metal reflective film 200 to extract the light generated in the light-emitting layer 420 of the light-emitting element 400 upward, the amount of light emitted from the upper end of the light-emitting element 400 and the light extraction efficiency can be increased.

[0219] The apparatuses described above may be implemented by hardware components, software components, and / or combinations of hardware components and software components. For example, the apparatuses and components described in the embodiments may be implemented using one or more general-purpose computers or special-purpose computers, such as, for example, a processor, a controller, an ALU (arithmetic logic unit), a digital signal processor, a microcomputer, an FPA (field programmable array), a PLU (programmable logic unit), a microprocessor, or some other device capable of executing and responding to instructions. The processing device may execute an operating system (OS) and one or more software applications running on the operating system. Also, the processing device may access, store, manipulate, process, and generate data in response to the execution of the software. For ease of understanding, the processing device may sometimes be described as if only one were used, but those of ordinary skill in the art will understand that the processing device may include multiple processing elements and / or multiple types of processing elements. For example, the processing device may include multiple processors or one processor and one controller. Also, other processing configurations, such as a parallel processor, are possible.

[0220] As described above, although the embodiments have been described with reference to the limited drawings, those of ordinary skill in the art can make various modifications and variations from the above description. For example, the described technology may be performed in an order different from the described method, and / or the components of the described system, structure, apparatus, circuit, etc. may be combined or combined in a form different from the described method, or may be replaced or substituted by other components or equivalents, and appropriate results may still be achieved.

[0221] Accordingly, other embodiments, other examples and equivalents to the claims also fall within the scope of the appended claims.

Description of the reference numerals

[0222] 10 Integration structure of a light-emitting element - thin-film transistor 100 Substrate 200 Metal reflective film 300 Buffer layer 400 Light-emitting element 500 Protection layer 600 Thin-film transistor 700 Ohmic contact metal

Claims

1. A substrate including a light-emitting region and a driving region, a metal reflective film formed on the substrate, a buffer layer formed on top of the metal reflective film, a light-emitting element disposed in the light-emitting region, a protective layer formed on the light-emitting element, a thin-film transistor disposed in the driving region and driving the light-emitting element, and an ohmic contact metal electrically connecting the cathode electrode of the light-emitting element and the metal reflective film, wherein the light-emitting element and the thin-film transistor are integrally formed on the substrate, and the active layer of the thin-film transistor is disposed below the light-emitting layer of the light-emitting element, characterized in that it is an integrated structure of a light-emitting element - thin-film transistor.

2. The source thin film of the thin-film transistor is characterized in that it blocks the light emitted from the light-emitting element from flowing into the active layer of the thin-film transistor. The integrated structure of the light-emitting element - thin-film transistor according to Claim 1.

3. The active layer of the thin-film transistor is an oxide semiconductor including at least one of amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, and InGaZnO-based materials. The integrated structure of the light-emitting element - thin-film transistor according to Claim 1.

4. A step of forming a metal reflective film on a substrate, a step of forming a buffer layer on top of the metal reflective film, a step of forming a light-emitting element in the light-emitting region on top of the substrate, a step of forming a protective layer on top of the light-emitting element, a step of forming a thin-film transistor in the driving region on top of the substrate, and a step of electrically connecting the cathode electrode of the light-emitting element and the metal reflective film using an ohmic contact metal. A method for manufacturing the integrated structure of the light-emitting element - thin-film transistor according to Claim 1.

5. A substrate including a light-emitting region and a driving region, a metal reflective film formed on the substrate, a buffer layer formed on top of the metal reflective film, a light-emitting element disposed in the light-emitting region, a protective layer formed on the light-emitting element, a thin-film transistor disposed in the driving region and driving the light-emitting element, and an ohmic contact metal electrically connecting the cathode electrode of the light-emitting element and the metal reflective film, wherein the light-emitting element and the thin-film transistor are integrally formed on the substrate, The light-emitting element and the thin-film transistor are integrally manufactured using a light-emitting element-thin-film transistor integrated substrate, The light-emitting element-thin-film transistor integrated substrate, An integration structure of a light-emitting element-thin-film transistor, characterized in that the substrate, the metal reflection film, the buffer layer, the light-emitting element layer, the protective layer, and the thin-film transistor layer are sequentially laminated.

6. Steps of manufacturing the light-emitting element-thin-film transistor integrated substrate; Steps of etching the thin-film transistor layer to expose the light-emitting element layer; Steps of forming a light-blocking film; Steps of forming a gate of the thin-film transistor; Steps of forming a TCO on the upper part of the light-emitting element layer; Steps of forming an insulating protective film between the TCO and the thin-film transistor; Steps of forming a source thin film and a drain thin film of the thin-film transistor; Steps of electrically connecting a cathode electrode of the light-emitting element and the metal reflection film using an ohmic contact metal, the manufacturing method of the integration structure of the light-emitting element-thin-film transistor according to Claim 5.

7. A substrate including a light-emitting region and a driving region, A metal reflection film formed on the substrate; A buffer layer formed on the upper part of the metal reflection film; A light-emitting element disposed in the light-emitting region; A protective layer formed on the light-emitting element; A thin-film transistor disposed in the driving region and driving the light-emitting element; Including an ohmic contact metal that electrically connects a cathode electrode of the light-emitting element and the metal reflection film, The light-emitting element and the thin-film transistor are integrally formed on the substrate, The light-emitting element and the thin-film transistor are integrally manufactured using a light-emitting element-thin-film transistor integrated substrate, The light-emitting element-thin-film transistor integrated substrate, An integration structure of a light-emitting element-thin-film transistor, characterized in that the substrate, the metal reflection film, the buffer layer, the light-emitting element layer, the TCO, the protective layer, and the thin-film transistor layer are sequentially laminated.

8. The metal reflection film, An integration structure of a light-emitting element-thin-film transistor according to Claim 1, characterized in that it contains at least one of Ag and Al, and increases the light extraction efficiency of the light-emitting element by reflecting the light generated from the light-emitting element.

9. The semiconductor thin film of the light-emitting element is grown at a low temperature by supplying additional energy to the physical vapor deposition method and the chemical vapor deposition method. The light-emitting element - thin film transistor integration structure according to claim 1, wherein the substrate is at least one of a glass substrate, a stainless steel substrate, and a polymer substrate.

10. The light-emitting element - thin film transistor integration structure according to claim 9, wherein the physical vapor deposition method uses at least one of a sputtering method, an e-beam evaporation method, and a thermal evaporation method.

11. The light-emitting element - thin film transistor integration structure according to claim 9, wherein the additional energy uses at least one of an ion beam, an electron beam, plasma, ultraviolet light, a laser, and LED light.

12. A substrate including a light-emitting region and a driving region, A protective layer formed on the substrate, A light-emitting element disposed in the light-emitting region, A thin film transistor disposed in the driving region and driving the light-emitting element, A metal reflective film formed on the thin film transistor, Including a TCO formed on the light-emitting element, The thin film transistor and the light-emitting element are integrally formed on the substrate, The light-emitting element and the thin film transistor are batch-produced using a thin film transistor - light-emitting element integrated substrate, The thin film transistor - light-emitting element integrated substrate, The light-emitting element - thin film transistor integration structure, characterized in that the substrate, the protective layer, the thin film transistor layer, the metal reflective film, the light-emitting element layer, and the TCO are sequentially laminated.

13. The step of manufacturing the thin film transistor - light-emitting element integrated substrate, The step of etching the light-emitting element layer to expose the thin film transistor layer, The step of etching the metal reflective film, The step of forming an insulating protective film on the TCO and the light-emitting element, The step of exposing the upper part of the TCO, The step of etching GI, The step of depositing a metal thin film, The method for manufacturing a light-emitting element - thin film transistor integration structure according to claim 12, including the step of forming a gate, a source thin film, and a drain thin film of the thin film transistor.

Images