Substrate susceptor using edge purge

Abstract

To provide a workpiece susceptor capable of solving a number of quality control issues related to physical interaction between a substrate and the susceptor.SOLUTION: In a semiconductor processing device, a workpiece susceptor body 200 includes: a front face 202 to support a workpiece; a back face 204 opposite the front face; a workpiece contact zone 210 at least partially forming a support boundary on an inner portion 226 of the front face; and a plurality of axial channels 224 disposed within the susceptor body. The workpiece contact zone is disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the axial channels connects to corresponding openings 222 extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims priority to U.S. Provisional Patent Application No. 62 / 851,414, filed May 22, 2019, entitled SUBSTRATE SUSCEPTOR USING EDGE PURGING, which is hereby incorporated by reference in its entirety. All applications identified in the application data sheet as claiming a foreign or domestic priority that are filed together with this application are hereby incorporated by reference in this specification under 37 CFR 1.57 of the United States Patent Law Implementing Regulations.

[0002] This disclosure generally relates to semiconductor processing, and more specifically to a susceptor for supporting a semiconductor substrate within a processing chamber.

Background Art

[0003] Description of Related Art Semiconductor manufacturing processes are typically performed using a substrate supported within a reaction chamber on a susceptor under controlled process conditions. In many processes, the semiconductor substrate (e.g., a wafer) is heated within the reaction chamber. Some quality control issues related to the physical interaction between the substrate and the susceptor can occur during processing.

Summary of the Invention

[0004] In some embodiments, a workpiece susceptor is provided. The workpiece susceptor body includes a front face configured to support a workpiece and a back face opposite the front face. The workpiece susceptor can also include a workpiece contact zone that at least partially forms a support boundary around an inner portion of the front face. The workpiece contact zone can be configured to be disposed radially inward of an outer edge of the workpiece disposed on the front face in a processing configuration. The workpiece susceptor also includes one or more axial channels disposed within the susceptor body. The axial channels are connected to one or more openings that extend to an outer portion of the front face. Each of the openings is disposed radially outward of the workpiece contact zone of the susceptor body. The workpiece contact zone is at a height higher than an outer portion of the face, and forms a gap radially outward of the workpiece contact zone and axially between the face of the susceptor body and the workpiece.

[0005] In some embodiments, a method of purging a workpiece susceptor is provided. The method includes loading a workpiece onto a workpiece contact zone on a front face of the susceptor body such that an outer edge of the workpiece is disposed radially outward of the workpiece contact zone. The method further includes disposing the workpiece in a processing configuration such that the front face of the susceptor body is in fluid communication with a reaction chamber and the back face of the susceptor body is in fluid communication with a load chamber. The method includes purging a back surface of an outer edge of the workpiece by providing a first pressure within the reaction chamber and flowing purge gas from one or more channels within the susceptor body to the gap at a second pressure radially outward of the workpiece contact zone and axially between the front face of the susceptor plate and the workpiece to the reaction chamber. The second pressure is higher than the first pressure.

Brief Description of the Drawings

[0006] The foregoing, as well as additional objects, features, and advantages of the concepts of the present invention, will be better understood from the following illustrative and non-limiting detailed description of embodiments of the invention with reference to the accompanying drawings. In the drawings, like reference numerals are used for like elements unless otherwise specified.

[0007]

Figure 1

Figure 2

Figure 3

Figure 4A

Figure 4B

Figure 4C

Figure 5

Figure 6

Figure 7

Figure 8

[0008] Although several embodiments and examples are disclosed below, it will be understood by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or applications of the present invention and their obvious modifications and equivalents. Accordingly, it is intended that the scope of the present invention disclosed herein should not be limited by the specifically disclosed embodiments described below.

[0009] Precision manufacturing techniques and equipment may be required for the preparation and processing of substrates. Further, maintenance and cleaning may be required for those processes. Various embodiments for improving the cleanliness and quality of substrate processing are described herein.

[0010] Various types of substantially flat workpieces, such as substrates (e.g., wafers including semiconductor wafers), are generally processed on a susceptor assembly within a processing apparatus. The susceptor assembly can include a susceptor, which can be formed by machining various hard materials (e.g., ceramics, graphite) into a desired shape and, optionally, applying a coating (e.g., silicon carbide (SiC)). The susceptor can be formed in various shapes to support workpieces of various shapes, but many are circular.

[0011] As described above, several quality control issues can arise during processing, particularly in relation to the interaction between reactants and the susceptor during substrate processing. These issues can include, for example, backside deposition on the substrate and unwanted deposition on various components or regions of the susceptor assembly and / or the processing apparatus. Such quality control issues can reduce the overall quality and production of the substrate and semiconductor devices, leading to a decrease in yield and an increase in cost.

[0012] Backside deposition occurs when process gas flows into the space between the substrate and the susceptor and deposits on the backside of the substrate. Random deposition can occur on the backside of the substrate because the flow of process gas is not controlled between the substrate and the susceptor. In addition to the above problems, this random deposition can cause non-uniformity in the backside thickness, which can affect the flatness of local areas on the surface and ultimately cause device uniformity problems.

[0013] In a typical process, a reactive gas passes over a heated wafer, causing chemical vapor deposition (CVD) of a thin layer of reactants on the wafer. Through sequential processing, multiple layers become an integrated circuit. Other exemplary processes include sputter deposition, photolithography, dry etching, plasma processing, and high-temperature annealing. Many of these processes require high temperatures and can be performed in the same or similar reaction chambers. The reactive gas includes metal chlorides (e.g., titanium chloride, titanium tetrachloride, etc.), other metal compounds (e.g., molybdenum, tungsten, etc.), silicon-based gases (e.g., silane, disilane, trisilane, etc.), oxidation gases (e.g., H2O, O2, O3, etc.), and / or any other suitable reactive gas. Various films, such as metal-based (e.g., titanium, molybdenum, tungsten, etc.) films, silicon-based films, and / or other films can be prepared. The film can comprise an oxide layer. In some embodiments, the reactive gas can include a mixture of any of the above gases (or combinations thereof) with another gas, such as hydrogen. In some embodiments, two or more reactive gases can be applied. For example, a first reactive gas (e.g., molybdenum gas) excluding hydrogen can be used, and / or the second reactive gas can include a mixture with hydrogen (e.g., molybdenum gas with hydrogen added). The second reactive gas can pass over the substrate after the first reactive gas.

[0014] The wafer may be processed at various temperatures to facilitate high-quality deposition. Temperature control is particularly beneficial at temperatures lower than the mass transfer region, e.g., in the case of silicon CVD using silane, at about 500 °C to 900 °C. In this dynamic region, if the temperature is not uniform across the surface of the wafer, the deposited film thickness will be non-uniform. However, in certain scenarios, lower temperatures may be used.

[0015] The diameter of the wafer also affects the processing. In recent years, single-wafer processing of large-diameter wafers has become more widely used for various reasons, including the desire to achieve higher process control accuracy than can be achieved with batch processing. Wafers are made of silicon and most commonly have a diameter of about 150 mm (about 6 inches) or about 200 mm (about 8 inches) and a thickness of about 0.725 mm. More recently, larger silicon wafers with a diameter of about 300 mm (about 12 inches) and a thickness of about 0.775 mm have been used. This is to more efficiently utilize the advantages of single-wafer processing. Even larger wafers are expected in the future. A typical single-wafer susceptor has pockets or recesses, and the wafer is placed therein during processing. In many cases, the recesses are shaped to accept the wafer very closely.

[0016] To address some of the above problems, the susceptor assembly or processing apparatus can comprise a purge channel design. As described, these improvements can reduce reactants in the reaction chamber that result from contact with the back surface of the substrate (e.g., the wafer), the surface of the susceptor assembly, or other undesirable areas. If reactants inadvertently contact a particular area of the processing apparatus or susceptor assembly, it may be necessary to clean the corresponding area. This not only adds labor to the processing of the substrate but also has the potential to degrade the quality of future wafer processing.

[0017] Refer now to the figures.

[0018] FIG. 1 schematically illustrates an embodiment of a semiconductor processing apparatus 100 comprising a reaction chamber 101 and a load chamber 102. Both the reaction chamber 101 and the load chamber 102 can be considered, for example, as processing modules implemented in a multi-module "cluster" tool. In the illustrated embodiment, as will be described in more detail below, the reaction chamber 101 is disposed above the load chamber 102, and they are separated by a base plate 107 and a movable pedestal or workpiece support 109.

[0019] In some embodiments, unlike the schematic diagrams which are not drawn to an exact scale, the reaction chamber 101 may be substantially smaller than the loading chamber 102. As shown herein, in the case of a single-sheet module, the reaction chamber 101 can have a volume of about 0.25 liters to 3 liters. In some embodiments, the reaction chamber 101 can have a volume of less than about 1 liter. In some embodiments, the reaction chamber 101 can have a length of about 900 mm, a width of 600 mm, and a height of 5 mm. In some embodiments, the loading chamber 102 can have a volume of about 30 liters to about 50 liters. In some embodiments, the loading chamber 102 can have a volume of about 40 liters. In some embodiments, the loading chamber 102 can have a volume that is about 35 to 45 times the volume of the reaction chamber 101.

[0020] In some embodiments, the reaction chamber 101 can include one or more inlets 103 (one is shown) and one or more outlets 104 (one is shown). During processing, gases such as reactants and purge gas can flow into the reaction chamber 101 through the reaction chamber inlet 103, and gases such as excess reactants, reactant by-products, and purge gas can flow out of the reaction chamber 101 through the reaction chamber outlet 104. In some embodiments, the loading chamber 102 can include one or more inlets 105 (one is shown) and one or more outlets 106 (one is shown). During operation, gases such as purge gas can flow into the loading chamber 102 through the loading chamber inlet 105, and gases such as excess reactants, reactant by-products, and purge gas can flow out of the loading chamber 102 through the loading chamber outlet 106. The shown configuration, for example, the positions of the inlets 103, 105 and outlets 104, 106 are merely schematic and can be adjusted based on, for example, the process performed in the reaction chamber 101, the desired gas flow path, etc. The purge gas can include a single purge gas or a mixture of purge gases. For example, in some embodiments, the purge gas can consist essentially of one or more inert gases, such as one or more noble gases (e.g., helium, argon, neon, xenon, etc.). The purge gas can include one or more inert gases that do not contain any reactive gas. In another embodiment, the purge gas can include, for example, one or more inert gases and one or more other non-inert gases. The purge gas can include an inert gas mixed with a reactive gas, such as hydrogen. The purge gas can include, for example, a mixture of hydrogen and argon. In some embodiments, a first purge gas consisting essentially of one or more inert gases (i.e., containing no reactive gas) can be used in a first purge step, and a second purge gas including a mixture of one or more inert gases mixed with one or more reactive gases can be used in a second purge step.In some embodiments, this second purge step follows the first purge step continuously. Using a purge step that includes one or more inert gases containing one or more reactive gases can help improve the distribution of reactants across the substrate. For example, a delivery system (e.g., a shower) can generally concentrate reactants near the center of the substrate. During the second purge step, a mixture of an inert gas and a reactive gas can provide a better distribution of reactants, for example, near the edges of the substrate.

[0021] In an exemplary embodiment, the reaction chamber 101 includes a base plate 107 having an opening 108. The inner edge of the base plate 107 defines the opening 108. In some embodiments, the base plate 107 can include titanium. In an exemplary embodiment, since the reaction chamber inlet 103 is disposed substantially opposite the reaction chamber outlet 104, the reactive gas flowing from the reaction chamber inlet 103 to the reaction chamber outlet 104 moves substantially parallel to the surface of the workpiece W and thus parallel to the upper surface of the movable support. Such a reactor may also be referred to as a "cross-flow" or horizontal laminar flow reactor. In some embodiments, the apparatus 100 may be an atomic layer deposition (ALD) reactor and includes valves controlled by a control system 113 to provide pulses of reactants separately. In some embodiments, the apparatus 100 includes two or more valves controlled independently of each other by the control system 113 and can adjust the relative pressure and / or the direction of flow between the reaction chamber 101 and the loading chamber 102. In some embodiments, the reaction chamber inlet 103 can include a distribution system that distributes gas in a desired pattern. In some embodiments, the reaction chamber 101 tapers near the reaction chamber outlet 104 such that the height of the reaction chamber 101 decreases near the reaction chamber outlet 104, thereby restricting the airflow through the reaction chamber outlet 104. The apparatus 100 can be described herein with respect to a deposition (e.g., chemical vapor deposition, or CVD, and / or atomic layer deposition, or ALD) reactor, but the apparatus 100 can alternatively include other semiconductor processing tools including, but not limited to, a dry etcher, an asher, a rapid thermal annealer, etc.

[0022] The apparatus 100 further includes a movable support 109 configured to move between a loading position and a processing position by the operation of a drive mechanism 110. FIG. 1 shows the support 109 in the loading position according to one embodiment. The support 109 can be configured to hold a workpiece (semiconductor workpiece W, see FIG. 2), for example, a silicon wafer. The workpiece W can be loaded onto and removed from the support 109 in various ways, for example, using a robot end effector. The support 109 can include lift pins 111 and / or notches to assist in loading and removing the workpiece W using paddles or forks. The support 109 may include a vacuum system to hold the workpiece W in place after loading, or may hold the workpiece W in a pocket sized and shaped to correspond to the workpiece W by gravity alone. The apparatus 100 can further include one or more gate valves 112 (one is shown) for loading the workpiece W onto the support 109 and removing it therefrom. The gate valve 112 can enable access to, for example, a transfer chamber, a load lock, a processing chamber, a clean room, etc.

[0023] The control system 113 is also configured or programmed to control the drive mechanism 110. In some embodiments, the drive mechanism 110 can include a piston or elevator that moves the support 109 vertically. Thus, the drive mechanism 110 is configured to move the support 109, and thus the workpiece W disposed on the support 109, to the processing position during a reactor closing operation and to the loading position during a reactor opening operation. The drive mechanism 110 can also be configured to rotate the workpiece W disposed on the support 109.

[0024] FIG. 2 schematically shows an apparatus 100 in which a support 109 is shown in a processing position. When in the processing position, the support 109 engages with a base plate 107 and effectively isolates or separates the interior of the reaction chamber 101 from the loading chamber 102. Such separation can reduce contamination between the reaction chamber 101 and the loading chamber 102. In some embodiments, the engagement can include forming a hard metal-to-metal seal between the base plate 107 and the support 109. In some embodiments, the engagement can include compressing a flexible material, such as an O-ring, at any portion to form a soft seal between the base plate 107 and the support 109. In some embodiments, the engagement can include maintaining a gap between the support 109 and the base plate 107 such that a complete seal is not formed. Even when the engagement includes maintaining a gap between the support 109 and the base plate 107, when the apparatus 100 is in the processing position, the support can further effectively separate the reaction chamber 101 from the loading chamber 102 by forming a substantial barrier to fluid communication between the reaction chamber 101 and the loading chamber 102.

[0025] FIG. 3 shows an exemplary susceptor body 200. The support 109 illustrated in FIGS. 1 and 2 can include the susceptor body 200. The susceptor body 200 can include a back surface 204 and a front surface 202. The susceptor body 200 can include a pedestal 218 that supports the back surface 204 and the front surface 202. The front surface 202 can be on the opposite side of the back surface 204. The front surface 202 can be generally substantially flat, and as described herein, several formations extend into or from the front surface 202. The front surface 202 can be configured to support a workpiece, such as a substrate (e.g., a wafer). The front surface 202 and / or the back surface 204 can form one or more shapes, such as a circle, an ellipse, a rectangle, etc. As shown in FIG. 3, the front surface 202 can be substantially circular. Accordingly, the term "circumferential direction" or related terms are used throughout. However, the concepts described herein can be equally applicable to other shapes.

[0026] The body 200 can include one or more openings 222. The openings 222 can extend into the outer portion 220 of the front surface 202. As further described herein, the openings 222 can provide an edge purge to a workpiece supported by the front surface 202. The openings 222 can be in fluid communication with one or more axial channels (e.g., channels 252 shown in FIGS. 4A - 4C) disposed within the susceptor body 200, for example, at least partially between the front surface 202 and the back surface 204. In some embodiments, the body can include axial channels extending in the circumferential direction. For example, an axial channel 224 extending in the circumferential direction can extend into the front surface 202. As shown herein, the openings 222 can communicate with the axial channel 224 extending in the circumferential direction. As shown herein, the axial channel extending in the circumferential direction can extend in a complete circle to form a ring-shaped channel.

[0027] The purge opening 222 can be configured to have a fixed or variable cross-sectional area to control the flow rate therethrough. For example, the purge opening 222 can include a corresponding flow control valve, such as a needle valve, to provide an adjustable flow rate. In some embodiments, the opening 222 includes a fixed orifice having a desired cross-sectional area and / or a desired amount (e.g., corresponding to a predetermined diameter) to provide a desired amount of edge purge flow under some process conditions. For example, the susceptor body 200 can have from about 15 to 36 purge openings 222, and in some embodiments has 18. Each of the purge openings 222 can have a diameter in the range of about 0.5 mm to 2 mm, and in some embodiments, the diameter is about 1.85 mm.

[0028] The susceptor body 200 can include a workpiece contact zone 210. The workpiece contact zone 210 can at least partially form a support boundary around the inner portion 226 of the front surface 202. In some embodiments, a seal can be formed at the interface between the workpiece contact zone 210 and the substrate held thereon to prevent flow between the outer portion 220 and the inner portion 226 of the front surface 202. The workpiece contact zone 210 can be configured to be disposed in the radially inward direction of the outer edge of the workpiece disposed on the front surface 202. When the workpiece is disposed on the front surface 202, the workpiece contact zone 210 is at a height higher than the outer portion 220 of the front surface 202, and a gap (not shown) can be formed in the radially outer direction of the workpiece contact zone 210 and axially between the front surface 202 of the susceptor body 200 and the workpiece. The workpiece contact zone 210 can include circumferential ribs extending from the front surface 202. Each of the openings 222 can be disposed in the radially outer direction of the workpiece contact zone 210. The workpiece contact zone 210 can have a thickness (i.e., radial width) in the range of about 1.5 mm to about 3 mm, and in some embodiments, the thickness is about 2 mm. In circular embodiments, the workpiece contact zone 210 can form a substantially annular support ring having a diameter in the range of about 286 mm to about 292 mm, and in some embodiments (e.g., embodiments configured to hold a 300 mm workpiece), the diameter is about 288 mm. In some embodiments, the radial distance from the outer edge of the workpiece to the workpiece contact zone 210 can be in the range of about 10 mm to about 12 mm, and in some embodiments, it is about 12 mm.

[0029] The susceptor body can include a workpiece holding portion 214. The workpiece holding portion 214 can include a circumferential rim facing in the radially inner direction. The workpiece holding portion 214 may be arranged in the radially outer direction from one or more openings 222 and can be configured to prevent radial movement of the workpiece. Thereby, damage to the workpiece can be prevented and higher-quality deposition of the workpiece can be promoted. The workpiece holding portion 214 can extend to a height higher than the workpiece contact zone 210 and hold the workpiece supported on the workpiece contact zone. The susceptor body 200 can include a circumferential edge facing in the radially outer direction of the workpiece holding portion 214. In some embodiments, the workpiece holding portion 214 can have a height in the range of about 0.8 mm to about 1 mm above the front surface 202, and in some embodiments, the height is about 0.9 mm.

[0030] The susceptor body 200 can include an inner vacuum region within the inner portion 226 of the front face 202. The vacuum region can be in the radially inner direction of the opening 222, the axial channel (e.g., the circumferential purge channel 224), and / or the workpiece contact zone 210. The inner vacuum region can include one or more vacuum grooves extending into the front face 202. For example, the circumferential groove 236 can extend into the front face 202 to form an outer vacuum boundary. One or more radial vacuum grooves can extend into the front face 202. The inner vacuum region can be divided into one or more portions by one or more radial vacuum grooves 246. The radial vacuum grooves 246 can form two, three, four, five, six, or more inner vacuum region portions. The susceptor body 200 can include one or more vacuum openings 244 extending into the inner vacuum region of the front face 202. The vacuum openings 244 can be in fluid communication with a vacuum. When the workpiece is on the front face 202, a vacuum can be applied through the vacuum openings 244 to apply a negative pressure to the workpiece along the radial vacuum grooves 246, the circumferential groove 236, and / or other regions of the inner vacuum region. The susceptor body 200 can include an embossed and / or raised formation, such as the raised formation 232 shown in FIG. 3, within the inner vacuum region. The raised formation 232 can provide a small separation between the workpiece and a portion of the front face 202 (e.g., the inner vacuum region). This separation can improve the functionality and effectiveness of the applied vacuum. The raised formation 232 can help reduce the attachment of the workpiece to the susceptor body 200 and / or reduce direct contact with the back surface of the workpiece, and thereby reduce the potential for contamination or damage to the workpiece. The raised formation 232 can also improve the uniformity of heat conduction to the workpiece 206.

[0031] One or more lift pin holes 228 can be provided through which a lift pin can extend through the body 200 and through which a workpiece (e.g., a wafer) can be placed on and / or removed from the front face 202. The lift pin holes 228 may be disposed radially inward or radially outward of and from the circumferential groove 236. In some embodiments, there are three lift pin holes 228, although other numbers are possible.

[0032] FIG. 4A shows a schematic cross-sectional side view of a portion of the susceptor body 200 described above with respect to FIG. 3. For example, FIG. 4A shows the axial purge channels 252 and the openings 222 disposed within the susceptor body 200 between the front face 202 and the back face 204. In some embodiments, each of the axial purge channels 252 may be in fluid communication via the circumferential purge channels 224 (FIG. 3).

[0033] The workpiece 206 is shown in contact with the workpiece contact zone 210 of the front face 202. As shown here, the workpiece contact zone 210 can be at a height higher than the outer portion 220 of the face 202. In some designs, a fluid gap 270 can be formed radially outward of the workpiece contact zone 210 between the workpiece 206 and the front face 202. According to the embodiment shown, the purge fluid can flow through the axial purge channels 252 and the openings 222 within the gap 270 along the back surface of the workpiece 206 and around the outer edge of the workpiece 206. This configuration can reduce or prevent the gas used for deposition on the front face of the workpiece 206 from depositing material on the edge or back surface of the workpiece 206. In some embodiments, the purge can flow through circumferential purge channels, such as the channels 224 shown in FIG. 3. In some embodiments, the fluid gap 270 can range from about 0.1 mm to about 0.18 mm, and in some embodiments, the fluid gap 270 is about 0.15 mm.

[0034] FIG. 4A also shows another detail of an embodiment in which the workpiece holding portion 214 is disposed at a height higher than the workpiece contact zone 210, as described above with respect to FIG. 3.

[0035] FIG. 4B shows a perspective cross-sectional view of an exemplary susceptor body 200 including a pedestal 218. The susceptor body 200 can be supported by using the pedestal 218, for example, by attaching it to the back surface 204 for support. The pedestal 218 can additionally or alternatively include one or more channels therein. For example, one or more pedestal purge channels 260 can be disposed within the pedestal 218. One or more pedestal purge channels 260 can extend longitudinally through the pedestal 218 and can be configured to be in fluid communication with at least one of the plurality of openings 222. For example, the susceptor body 202 can include two axial purge channels 252, as described elsewhere herein. The susceptor body 200 can include one or more radial purge channels 248 disposed between the front surface 202 and the back surface 204. One or more radial purge channels 248 can extend from and / or be in fluid communication with at least one of the axial purge channels 252, and can be in fluid communication between the axial channels 252 and the longitudinal pedestal channels 260. In some embodiments, a circumferential groove shown as a circumferential purge channel 256 can be in fluid communication with (e.g., provide fluid communication between) the radial channels 248 and the axial channels 252. In some embodiments, the pedestal purge channels 260 can have a diameter in the range of about 3 mm to about 5 mm, and in some embodiments is about 4 mm. The radial purge channels 248 can have a diameter in the range of about 2 mm to about 4 mm, and in some embodiments is about 3 mm.

[0036] Figure 4C shows an exemplary susceptor body 200 having an axial purge channel 252 that connects the front face 202 to the back face 204. As best shown in the detailed view, in some embodiments, the axial purge channel 252 can pass completely through the body 200 from the front face 202 and through the front face 202 to the back face 204 and through the back face 204. Also, as described above with respect to FIG. 3, the susceptor body 200 can include lift pin holes 228. As shown here, the pedestal 218 can be attached to or include a fixed assembly for securely attaching to other forms, such as a lift mechanism, fluid elements, and / or other forms.

[0037] FIG. 5 shows a cross-sectional view of an exemplary susceptor body 200. In some embodiments, the view shown in FIG. 5 is a cross-sectional view along a different (e.g., orthogonal) plane than the view shown in FIG. 4C and shows many similar vacuum forms described above and shown in FIG. 3. As shown here, the susceptor body 200 can include one or more pedestal vacuum channels 266 in fluid communication with one or more radial vacuum grooves 246. Circumferential grooves 236 are also shown. The pedestal vacuum channels 266 may be disposed radially near the edge of the pedestal 218. The pedestal vacuum channels 266 may be longitudinal (to form longitudinal vacuum channels) and may extend through the pedestal 218. In some embodiments, the vacuum channels 266 are configured to be in fluid communication with one or more of the vacuum openings 244. Additionally or alternatively, the pedestal vacuum channels 266 may be in fluid communication with at least one of the plurality of radial vacuum grooves 246. The radial vacuum grooves 246 may be in fluid communication with the vacuum openings 244 and / or the circumferential grooves 236. In some embodiments, the vacuum holes 244 can have a separation distance from each other in the range of about 43 mm to about 52 mm, and in some embodiments, is about 51.5 mm.

[0038] FIG. 6 shows a perspective view of a cross-section of an exemplary susceptor body 200. This cross-section may be along a plane different from the cross-sections shown in FIGS. 4A and 4B. As shown here, the circumferential purge channel 256 can be disposed throughout the susceptor body 200. This arrangement of the circumferential purge channel 256 can allow for greater access and ingress of all purge gases to the entire susceptor body 200 (e.g., between the front face 202 and the back face 204).

[0039] Thermocouple channels, such as the radial thermocouple channels 262, are also shown. Here, the thermocouple channels can be configured to include thermocouples extending therein. The susceptor body 200 can include thermocouples disposed at least partially within the thermocouple channels 262. The susceptor body 200 can include one or more radial thermocouple channels 262. The radial thermocouple channels 262 may be disposed between the front face 202 and the back face 204.

[0040] The pedestal 218 can include a longitudinally extending longitudinal thermocouple channel 264 configured to receive a thermocouple. The longitudinal thermocouple channel 264 may be in fluid communication with the thermocouple channel 262. The thermocouple can be configured to measure temperature at various points extending radially through the thermocouple channel 262. Such long thermocouple channels 262 can allow for access to more accurate temperature information over a majority of the susceptor body 200 and / or allow for corrections to the deposition process as needed.

[0041] FIG. 7 is a horizontal cross-sectional view of an exemplary susceptor body 200 between a front face 202 and a back face 204. As shown herein, the susceptor body 200 can include a plurality of radial purge channels 248. The radial purge channels 248 can be in fluid communication with corresponding pedestal purge channels 260, as shown herein. One or more groups of the radial purge channels 248 can be associated with corresponding pedestal purge channels 260. Each of the radial purge channels 248 within a group can be radially offset from each other. Additionally or alternatively, the radial purge channels 248 between groups can be offset from each other. For example, the radial offset (e.g., within a group, between groups) can be about 5 degrees to 140 degrees. For example, the radial offset can be about 50 degrees to 70 degrees. In some embodiments, the radial offset can be substantially equal between adjacent radial purge channels 248 within the same group. Additionally or alternatively, the offset can be substantially equal between all adjacent radial purge channels 248. As shown herein, the thermocouple channels 262 can be disposed in substantially the same plane as one or more of the radial purge channels 248.

[0042] FIG. 8 shows an exemplary method 300 for purging a workpiece susceptor, such as an embodiment of a susceptor comprising a susceptor body 200 described with reference to FIGS. 3-7, using a processing apparatus, e.g., apparatus 100, and in some embodiments a controller, e.g., controller 113 described with reference to FIG. 2-2. Method 300 can include loading a workpiece onto a workpiece contact zone on the front surface of the susceptor body such that an outer edge of the workpiece is disposed in a radially outward direction from the workpiece contact zone, as shown at block 304. Method 300 can include positioning the workpiece in a processing configuration such that the front surface of the susceptor body is in fluid communication with a reaction chamber, as shown at block 308. The positioning can include positioning the back surface of the susceptor body such that it is in fluid communication with a loading chamber. As shown at block 312, method 300 can include providing a first pressure within the reaction chamber. At block 316, method 300 can include purging the backside of the outer edge of the workpiece by flowing a purge gas at a second pressure through a plurality of channels within the susceptor. The purge gas can be passed through a gap, in a radially outward direction of the workpiece contact zone, and axially between the front surface of the susceptor plate and the workpiece to the reaction chamber. In some embodiments, the second pressure is higher than the first pressure. In some embodiments, the second pressure is configured to be higher than the first pressure within the loading chamber.

[0043] In some embodiments, the workpiece contact zone comprises circumferential ribs extending from the front face. In some embodiments, loading the workpiece onto the workpiece contact zone can include loading the workpiece in a radially inward direction relative to a workpiece holding portion disposed in a radially outward direction from the workpiece contact zone. The workpiece holding portion can be configured to prevent radial movement of the workpiece as disclosed herein. Purging the backside of the outer edge of the workpiece can include flowing a purge gas through a plurality of axial channels disposed within the susceptor body. The axial channels can extend through the susceptor body of the workpiece and the back face of the susceptor body.

[0044] In some embodiments, purging the backside of the outer edge of the workpiece includes flowing a purge gas through a plurality of openings extending into the outer portion of the front face, each of the openings being disposed in a radially outward direction of the workpiece contact zone of the susceptor body. Another of the openings may be disposed in fluid communication with a corresponding channel of the plurality of axial channels. In some embodiments, purging the backside of the outer edge of the workpiece can include flowing a purge gas through a plurality of radial channels disposed between the front face and the back face. The radial channels can extend from and / or be in fluid communication with at least one of the plurality of axial channels.

[0045] Method 300 can include applying a vacuum to the back surface of the workpiece via a plurality of openings extending into the inner portion of the front face. Applying a vacuum to the back surface of the workpiece can include applying a vacuum to at least one longitudinal vacuum channel extending through a pedestal configured to support the back face. The at least one longitudinal vacuum channel may be in fluid communication with at least one of the plurality of openings. One or more aspects of method 300 can include the functions and features of susceptor body 200 disclosed above with respect to FIGS. 1-7.

Example

[0046] The following shows various embodiments.

[0047] In a first embodiment, the workpiece susceptor body includes a front surface configured to support a workpiece, a back surface opposite the front surface, and a workpiece contact zone that at least partially forms a support boundary around an inner portion of the front surface. The workpiece contact zone is configured to be disposed in a radially inner direction of an outer edge of the workpiece disposed on the front surface in a processing configuration. The workpiece contact zone, and one or more axial channels disposed within the susceptor body, the axial channels are connected to one or more openings extending into an outer portion of the front surface, and each of the openings is disposed in a radially outer direction of the workpiece contact zone of the susceptor body. The workpiece contact zone is at a height higher than an outer portion of the surface, and forms a gap in a radially outer direction of the workpiece contact zone and axially between the surface of the susceptor body and the workpiece.

[0048] A second embodiment is the workpiece susceptor body according to Embodiment 1, wherein the workpiece contact zone includes a circumferential rib extending from the front surface.

[0049] A third embodiment is the workpiece susceptor body according to any one of Embodiments 1 to 2, further including a workpiece.

[0050] A fourth embodiment is the workpiece susceptor body according to any one of Embodiments 1 to 3, further including a workpiece holding portion disposed in a radially outer direction from the opening, and the workpiece holding portion is configured to prevent radial movement of the workpiece.

[0051] A fifth embodiment is the workpiece susceptor body according to Embodiment 4, wherein the workpiece holding portion is disposed at a height higher than the workpiece contact zone.

[0052] The sixth embodiment is the workpiece susceptor body according to any one of Embodiments 1 to 5, wherein the axial channel extends through the workpiece susceptor body and the back surface.

[0053] The seventh embodiment is the workpiece susceptor body according to any one of Embodiments 1 to 6, further comprising a plurality of radial channels disposed between the front surface and the back surface and extending from and in fluid communication with at least one of the plurality of axial channels.

[0054] The eighth embodiment is the workpiece susceptor body according to Embodiment 7, further comprising a pedestal configured to support the back surface and at least one longitudinal purge channel extending through the pedestal and configured to be in fluid communication with at least one of the plurality of radial channels.

[0055] The ninth embodiment is the workpiece susceptor body according to Embodiment 8, further comprising one or more openings extending into the inner portion of the front surface, the plurality of openings being configured to be in fluid communication with a vacuum.

[0056] The tenth embodiment is the workpiece susceptor body according to Embodiment 9, further comprising at least one longitudinal vacuum channel extending through the pedestal and configured to be in fluid communication with at least one of the plurality of openings.

[0057] The eleventh embodiment is the workpiece susceptor body according to Embodiment 10, further comprising a plurality of radial grooves extending into the front surface, each of the plurality of radial grooves being in fluid communication with at least one of the plurality of openings.

[0058] The twelfth embodiment is the workpiece susceptor body according to Embodiment 11, further comprising a circumferential groove in fluid communication with the plurality of radial grooves.

[0059] The 13th embodiment is the workpiece susceptor body according to Embodiment 12, wherein the circumferential groove forms an inner vacuum region on the front surface and further includes a plurality of protrusions extending from the front surface within the inner vacuum region.

[0060] The 14th embodiment is the workpiece susceptor body according to any one of Embodiments 7 to 13, wherein the plurality of radial channels include a plurality of radial fluid channels, the plurality of radial fluid channels further include at least one radial thermocouple channel disposed between the front surface and the back surface, and the radial thermocouple channel is configured to receive a thermocouple.

[0061] The 15th embodiment is the workpiece susceptor body according to any one of Embodiments 8 to 13, wherein the plurality of radial channels include a plurality of radial fluid channels, the plurality of radial fluid channels further include at least one radial thermocouple channel disposed between the front surface and the back surface, and further include at least one longitudinal thermocouple channel extending through the pedestal, and at least one radial thermocouple channel and the longitudinal thermocouple channel are configured to receive a thermocouple.

[0062] In the 16th embodiment, a method for purging a workpiece susceptor includes loading a workpiece onto a workpiece contact zone on the front surface of the susceptor body such that an outer edge of the workpiece is disposed in a radially outward direction from the workpiece contact zone, disposing the workpiece in a processing configuration in which the front surface of the susceptor body is in fluid communication with a reaction chamber and the back surface of the susceptor body is in fluid communication with a loading chamber, providing a first pressure in the reaction chamber, and flowing a purge gas from one or more channels in the susceptor body to a gap at a second pressure in a radially outward direction of the workpiece contact zone and axially between the front surface of the susceptor plate and the workpiece to the reaction chamber, thereby purging the back surface of the outer edge of the workpiece, wherein the second pressure is higher than the first pressure.

[0063] The 17th embodiment is the method according to embodiment 16, wherein the workpiece contact zone comprises circumferential ribs extending from the front face.

[0064] The 18th embodiment is the method according to any one of embodiments 16 to 17, wherein loading the workpiece onto the workpiece contact zone includes loading the workpiece in the radially inner direction of a workpiece holding portion arranged in the radially outer direction from the workpiece contact zone, and the workpiece holding portion is configured to prevent the radial movement of the workpiece.

[0065] The 19th embodiment is the method according to any one of embodiments 16 to 18, wherein purging the back surface of the outer edge of the workpiece includes flowing a purge gas through one or more axial channels arranged in the susceptor body, and the axial channels extend through the workpiece susceptor body and the back surface.

[0066] The 20th embodiment is the method according to embodiment 19, wherein purging the back side of the outer edge of the workpiece further includes flowing a purge gas through one or more openings extending into the outer portion of the front face, each of the openings being arranged in the radially outer direction of the workpiece contact zone of the susceptor body, and each of the openings being arranged in fluid communication with at least one of the one or more axial channels.

[0067] The 21st embodiment is the method according to embodiment 20, wherein purging the back side of the outer edge of the workpiece further includes flowing a purge gas through a plurality of radial channels arranged between the front face and the back face, the radial channels extending from and being in fluid communication with at least one of the one or more axial channels.

[0068] The 22nd embodiment is the method according to embodiment 21, further including applying a vacuum to the back surface of the workpiece through one or more openings extending into the inner portion of the front face.

[0069] The 23rd embodiment includes applying a vacuum to the back surface of the workpiece by applying the vacuum to at least one longitudinal vacuum channel that extends through a pedestal configured to support the back surface, and the at least one longitudinal vacuum channel is in fluid communication with at least one of one or more openings, and it is the method described in Example 22.

[0070] The 24th embodiment is the method described in any one of Examples 16 to 23, wherein the purge gas includes an inert gas and a reactive gas.

[0071] The 25th embodiment is the method described in Example 24, wherein the inert gas includes argon and the reactive gas includes hydrogen.

[0072] The 26th embodiment is the method described in any one of Examples 16 to 23, wherein purging includes a first purging step including a first purge gas consisting essentially of an inert gas and a second purging step including a second purge gas including an inert gas and a reactive gas.

[0073] The 27th embodiment is the method described in Example 26, wherein the second purging step continuously follows the first purging step.

[0074] Other Considerations This aspect and embodiment can be described with respect to functional block components and various processing steps. Such functional blocks can be realized by various hardware or software components configured to execute specified functions and achieve various results. For example, this aspect can use various sensors, detectors, flow control devices, heaters, etc. that can execute various functions. Furthermore, this aspect and embodiment can be implemented with any number of processing methods, the described devices and systems can use various processing methods, and the described devices and systems are merely examples of the uses of the present invention.

[0075] As used herein, the term "exemplary" is used to mean "serving as an example, instance, or illustration." Any aspect or embodiment described herein as "exemplary" should not necessarily be construed as preferred or advantageous over other aspects or embodiments. Various aspects of the novel systems, devices, and methods will be described in more detail below with reference to the accompanying drawings. However, the present disclosure may be embodied in many different forms and should not be construed as limited to any specific structure or function presented throughout the present disclosure. Rather, these aspects are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Whether applied independently of or in combination with other aspects described, based on the teachings herein, those skilled in the art should understand that the scope of the present disclosure is intended to cover any aspect of the novel systems, devices, and methods disclosed herein. For example, an apparatus may be implemented or a method may be practiced using various aspects described herein. Further, the scope of the present disclosure is intended to cover such apparatus or methods implemented using other structures, functions, or a combination of structures and functions in addition to or other than the various aspects of the present disclosure described herein. It goes without saying that any aspect disclosed herein can be embodied by one or more elements of the claims.

[0076] Also, unless a term is clearly defined in this patent using the phrase "The term '___' as used in this specification is hereby defined as...", or a similar phrase, there is no intention to limit the meaning of the term, explicitly or implicitly, beyond its plain or ordinary meaning, and it goes without saying that such a term should not be construed as being limited in scope based on any description made in any section of this patent (other than the terms in the claims). As long as the terms recited in the last claims of this patent are referenced in a way that is consistent with a single meaning in this patent, this is done only for clarity so as not to confuse the reader, and such claim terms are not intended to be limited, by implication or otherwise, to that single meaning.

[0077] Conditional terms, such as "can", "could", "might", "may", are generally understood to be intended to convey that, unless otherwise specified or understood within the context in which they are used, a particular embodiment includes a particular feature, element, and / or step, while other embodiments do not. Thus, such conditional language is not generally intended to suggest that a feature, element, and / or step is required in any way in one or more embodiments, or that one or more embodiments necessarily include logic for determining whether these features, elements, and / or steps are included in or performed in any particular embodiment, regardless of user input or instructions.

[0078] Conjunctive terms, such as the phrase "at least one of X, Y, and Z", are understood, unless otherwise specified, in the context in which they are generally used to convey that the item, term, etc. is any of X, Y, or Z. Thus, such conjunctive terms are not generally intended to suggest that a particular embodiment requires the presence of at least one of X, at least one of Y, and at least one of Z.

[0079] As used herein, degree terms such as the terms "about", "approximately", "generally", and "substantially" used herein still represent values, amounts, or characteristics close to the described values, amounts, or characteristics that perform the desired function or achieve the desired result. For example, the terms "about", "approximately", "generally", and "substantially" may refer to amounts within less than 10%, within less than 5%, within less than 1%, within less than 0.1%, and within less than 0.01% of the described amount, depending on the desired function or desired result.

[0080] Particular embodiments have been described, but these embodiments are presented by way of example only and are not intended to limit the scope of the disclosure. In fact, the novel methods and systems described herein can be embodied in various other forms. Further, various omissions, substitutions, and changes in the systems and methods described herein can be made without departing from the spirit of the disclosure. The appended claims and their equivalents are intended to cover such forms or modifications as fall within the scope and spirit of the disclosure.

[0081] Features, materials, characteristics, or groups described in connection with a particular aspect, embodiment, or example are to be understood as applicable to any other aspect, embodiment, or example described in this section or elsewhere in this specification, provided they are not inconsistent therewith. All features disclosed in this specification (including the appended claims, abstract, and drawings), and / or all steps of any method or process so disclosed, may be combined in any combination, except combinations in which at least some of such features and / or steps are mutually exclusive. The protection is not limited to the details of all the foregoing embodiments. The protection extends to any novel or novel combination of the features disclosed in this specification (including the appended claims, abstract, and drawings), or to any novel or novel combination of the steps of any method or process so disclosed.

[0082] Furthermore, the specific features described in this disclosure in connection with separate embodiments can also be implemented in combination in a single embodiment. Conversely, the various features described in connection with a single embodiment can also be implemented separately in multiple embodiments or in any suitable partial combination. Additionally, although the features are described above as functioning in a particular combination, one or more features from the claimed combination can optionally be deleted from the combination, and the combination can be claimed as a partial combination or a variation of a partial combination.

[0083] Furthermore, operations may be depicted in the drawings in a particular order or may be described herein in a particular order, but such operations need not be performed in the particular order or sequentially shown to achieve a desirable result, nor do all operations need to be performed. Other operations not shown or described can be incorporated into the exemplary methods and processes. For example, one or more additional operations can be performed before, after, simultaneously with, or between any of the described operations. Further, in other embodiments, the operations can be rearranged or reordered. Those skilled in the art will understand that in some embodiments, the actual steps taken in the illustrated and / or disclosed processes may differ from the steps shown in the figures. Depending on the embodiment, some of the above steps may be omitted, and other steps may be added. Additionally, the features and attributes of the particular embodiments disclosed above may be combined in different ways to form additional embodiments, all of which are within the scope of this disclosure. Also, the separation of the various system components in the above embodiments should not be understood to be required in all embodiments. And it should be understood that the described components and systems can generally be integrated together into a single product or packaged into multiple products. For example, any of the components of the energy storage system described herein can be provided separately or integrated together (e.g., packaged together or attached together) to form an energy storage system.

[0084] For purposes of this disclosure, several aspects, advantages, and novel features are described herein. Not necessarily all such advantages are achieved in accordance with any particular embodiment. Thus, for example, those skilled in the art will recognize that this disclosure can be embodied or carried out in a manner that achieves one advantage or group of advantages taught herein without necessarily achieving other advantages that can be taught or suggested herein.

[0085] If there are headings provided in this specification, they are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein.

[0086] The scope of this disclosure is not intended to be limited by the specific disclosure of preferred embodiments in this section or elsewhere in this specification, and can be defined by the claims presented in this section or elsewhere in this specification, or presented in the future. The terms of the claims should be construed broadly based on the terms used in the claims, and are not limited to the examples described in this specification or during the application process, and those examples should be construed as non-limiting.

Claims

1. A workpiece susceptor body, comprising: a front surface configured to support a workpiece; a back surface opposite to the front surface; a workpiece contact zone that at least partially forms a support boundary around an inner portion of the front surface, wherein the workpiece contact zone is configured to be disposed in a radially inner direction of an outer edge of the workpiece disposed on the front surface in a processing configuration; one or more axial channels disposed within the susceptor body, the axial channels being connected to one or more openings extending into an outer portion of the front surface, each of the openings being disposed in a radially outer direction of the workpiece contact zone of the susceptor body, and extending through the workpiece susceptor body and the back surface; a workpiece holding portion radially outward from each of the one or more openings, the workpiece holding portion comprising a circumferential ring configured to prevent radial movement of the workpiece beyond the circumferential ring; the inner portion of the front surface comprises an inner vacuum region divided into one or more by one circumferential groove and one or more radial vacuum grooves, the inner vacuum region comprising a vacuum opening of a longitudinal vacuum channel, an embossed or raised shape, and a lift pin hole; the workpiece contact zone is at a higher height than the outer portion of the front surface, and forms a gap in a radially outer direction of the workpiece contact zone and axially between the front surface of the susceptor body and the workpiece, the workpiece susceptor body.

2. The workpiece susceptor body according to claim 1, wherein the workpiece contact zone comprises a circumferential rib extending from the front surface.

3. The workpiece susceptor body according to claim 1, further comprising the workpiece.

4. The workpiece susceptor body according to claim 1, wherein the workpiece holding portion is disposed radially outward from the opening and is configured to prevent radial movement of the workpiece.

5. The workpiece susceptor body according to claim 4, wherein the workpiece holding portion is disposed at a higher height than the workpiece contact zone.

6. The workpiece susceptor body according to claim 1, further comprising a plurality of radial channels disposed between the front surface and the back surface and extending from at least one of the plurality of axial channels to be in fluid communication.

7. A pedestal configured to support the back surface, The workpiece susceptor body according to claim 6, further comprising at least one longitudinal purge channel extending through the pedestal and configured to be in fluid communication with at least one of the plurality of radial channels.

8. The workpiece susceptor body according to claim 7, further comprising one or more openings extending into the inner portion of the front surface, the plurality of openings being configured to be in fluid communication with a vacuum.

9. The longitudinal vacuum channel extends through the pedestal and is configured to be in fluid communication with at least one of the plurality of openings extending into the inner portion of the front surface, the workpiece susceptor body according to claim 8.

10. The workpiece susceptor body according to claim 9, further comprising a plurality of radial grooves extending into the front surface, each of the plurality of radial grooves being in fluid communication with at least one of the plurality of openings extending into the inner portion of the front surface.

11. The workpiece susceptor body according to claim 10, further comprising a circumferential groove in fluid communication with the plurality of radial grooves.

12. The circumferential groove forms an inner vacuum region on the front surface, the workpiece susceptor body according to claim 11, further comprising a plurality of protrusions extending from the front surface within the inner vacuum region.

13. The workpiece susceptor body according to claim 6, further comprising a plurality of radial fluid channels different from the plurality of radial channels, the plurality of radial fluid channels further comprising at least one radial thermocouple channel disposed between the front surface and the back surface, the radial thermocouple channel being configured to receive a thermocouple.

14. The plurality of radial channels include a plurality of radial fluid channels and further include at least one radial thermocouple channel disposed between the front surface and the back surface, and further include at least one longitudinal thermocouple channel extending through the pedestal, wherein the at least one radial thermocouple channel and the longitudinal thermocouple channel are configured to receive a thermocouple. The workpiece susceptor body according to claim 7.

Images