Wafer temperature control device

Abstract

To provide a wafer temperature regulator, which can properly regulate a temperature for each of a plurality of segmented regions.SOLUTION: A wafer temperature regulator 1A comprises a temperature regulating sheet 2A and a top plate 3. The temperature regulating sheet 2A has a plurality of temperature regulating parts 21. The plurality of temperature regulating parts 21 are divided from each other through segmented regions 22, in the same surface. The plurality of temperature regulating parts 21 can independently regulate temperatures. The top plate 3 has a plate main body 31 laminated on the temperature regulating sheet 2A. In the plate main body 31, a surface at the opposite side of the temperature regulating sheet 2A acts as a placement surface 31f for a semiconductor wafer. The top plate 3 has heat insulating parts 32. The heat insulating parts 32 are arranged at positions corresponding to the segmented regions 22 in the plate main body 31, when viewed in a direction Ds in which the temperature regulating sheet 2A is laminated on the top plate 3. The heat insulating part 32 is smaller in thermal conductivity than the plate main body 31.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a wafer temperature adjustment device. [Background technology]

[0002] Patent Document 1 describes a circular cooling plate for cooling wafers. This circular cooling plate is equipped with a thermo-module consisting of multiple Peltier elements arranged between a pair of heat transfer plates. In Patent Document 1, the shape of the pair of heat transfer plates and the arrangement of the multiple Peltier elements are devised in various ways to arrange the thermo-modules as closely as possible, thereby improving cooling capacity and reducing temperature distribution. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-185051 Summary of the Invention [Problem to be solved by the invention]

[0004] In a wafer temperature control device that controls the temperature of a wafer as in Patent Document 1, it is desirable to support the back surface of the wafer from below by a smooth surface without any irregularities in order to reduce the impact on the back surface of the wafer. Furthermore, in the wafer temperature control device described above, rather than reducing the temperature distribution of the wafer, it is desired to set multiple zones within the wafer surface and control the temperature of each zone independently. However, even if adjacent zones are made to have different temperatures, the desired temperature may not be obtained near the boundary between the adjacent zones due to heat conduction within the smooth surface that supports the wafer. The present invention has been made in view of the above-mentioned problems, and has as its object to provide a wafer temperature adjustment device that can effectively adjust the temperature for each of a plurality of zones. [Means for solving the problem]

[0005] A wafer temperature adjustment device according to one aspect of the present invention includes a temperature adjustment sheet and a top plate. The temperature adjustment sheet includes a plurality of temperature adjustment units. A plurality of sheet pieces forming each of the The plurality of temperature adjustment units are divided from one another by dividing regions within the same plane, and the plurality of temperature adjustment units are capable of independently adjusting the temperature. The top plate has a plate body. The plate body is laminated on the temperature adjustment sheet. The surface of the plate body opposite to the temperature adjustment sheet is a smooth surface intersecting the stacking direction and serving as a semiconductor wafer mounting surface. The top plate is disposed in a position on the plate body corresponding to the divided region of the temperature adjustment sheet when viewed from the stacking direction of the temperature adjustment sheet and the top plate, and has a thermal conductivity lower than that of the plate body. A space formed in the plate body The rotor has an insulating portion, and the dividing region includes a first dividing region extending in the circumferential direction and a second dividing region extending in the radial direction, and the insulating portion includes a first insulating portion arranged at a position corresponding to the first dividing region and a second insulating portion arranged at a position corresponding to the second dividing region. [Effects of the Invention]

[0006] According to the present invention, the temperature can be appropriately adjusted for each of the plurality of divided regions. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a cross-sectional elevation view showing a schematic configuration of a wafer temperature adjustment device according to an embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view taken along line II in FIG. [Figure 3] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Figure 4] FIG. 2 is a plan view of a top plate of the temperature control device. [Figure 5] FIG. 10 is a cross-sectional elevation view showing a schematic configuration of a wafer temperature adjustment device according to a modified example of the embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. <Wafer temperature control device> The wafer temperature adjustment device according to this embodiment (hereinafter simply referred to as the temperature adjustment device) is installed in, for example, a semiconductor manufacturing device. This temperature adjustment device supports, from below, a semiconductor wafer that is to be subjected to a predetermined process such as plasma processing or etching processing in the semiconductor manufacturing device. The temperature adjustment device adjusts the temperature of the semiconductor wafer to a temperature suitable for the predetermined process.

[0009] FIG. 1 is a cross-sectional elevation view showing a schematic configuration of a wafer temperature adjustment device according to an embodiment of the present invention. As shown in FIG. 1, a temperature control device 1A according to this embodiment is supported in a chamber 5 of a semiconductor manufacturing device. The temperature control device 1A separates an upper space 6A, which is the interior of the chamber 5, from a lower space 6B, which is the exterior of the chamber 5. The upper space 6A is disposed above the temperature control device 1A in the vertical direction Dv. The lower space 6B is disposed below the temperature control device 1A in the vertical direction Dv. In this embodiment, for example, the upper space 6A is evacuated to a vacuum level suitable for a predetermined process.

[0010] The temperature control device 1A includes a temperature control sheet 2A, a top plate 3, and a cooling plate 8. The temperature control sheet 2A, the top plate 3, and the cooling plate 8 are stacked in the vertical direction Dv.

[0011] FIG. 2 is a cross-sectional view taken along line II in FIG. As shown in FIG. 2, in this embodiment, the outline of the temperature adjustment sheet 2A when viewed in the vertical direction Dv (a direction perpendicular to the plane of FIG. 2) is, for example, circular. The temperature adjustment sheet 2A has a plurality of temperature adjustment units 21. The plurality of temperature adjustment units 21 in this embodiment are spaced apart from each other with divided regions 22 sandwiched between them in the same plane (horizontal plane) perpendicular to the stacking direction Ds (vertical direction Dv) of the temperature adjustment sheet 2A and the top plate 3. In this embodiment, the plurality of temperature adjustment units 21 have, for example, an inner peripheral temperature adjustment unit 21A, intermediate temperature adjustment units 21B and 21C, and outer peripheral temperature adjustment units 21D to 21G.

[0012] The inner temperature adjustment portion 21A is disposed in the center of the circle of the temperature adjustment sheet 2A when viewed from the vertical direction Dv. The inner temperature adjustment portion 21A exemplified in this embodiment has a circular shape when viewed from the vertical direction Dv.

[0013] The intermediate temperature adjustment portions 21B and 21C are arranged outside the inner peripheral temperature adjustment portion 21A in the radial direction Dr of the temperature adjustment sheet 2A, and are arranged so as to surround the temperature adjustment sheet 2A. Specifically, in this embodiment, the intermediate temperature adjustment portions 21B and 21C are each formed in a semicircular arc shape. These semicircular arc-shaped intermediate temperature adjustment portions 21B and 21C are lined up in the circumferential direction Dc to form a substantially annular shape.

[0014] The inner temperature adjustment portion 21A and the intermediate temperature adjustment portions 21B and 21C are spaced apart in the radial direction Dr by an annular first dividing region 22P that is continuous in the circumferential direction Dc of the temperature adjustment sheet 2A. In addition, in the circumferential direction Dc, the intermediate temperature adjustment portion 21B and the intermediate temperature adjustment portion 21C are spaced apart from each other by second dividing regions 22Q. Each second dividing region 22Q extends in the radial direction Dr and connects the first dividing region 22P to a third dividing region 22R, which will be described later.

[0015] The peripheral temperature adjustment units 21D-21G are arranged outside the intermediate temperature adjustment units 21B, 21C in the radial direction Dr, and are arranged to surround the intermediate temperature adjustment units 21B, 21C. Specifically, the peripheral temperature adjustment units 21D-21G in this embodiment are each formed in an arc shape. These arc-shaped peripheral temperature adjustment units 21D-21G are arranged in the circumferential direction Dc to form a substantially annular shape. These peripheral temperature adjustment units 21D-21G are arranged at the outermost periphery of the temperature adjustment sheet 2A.

[0016] The intermediate temperature adjustment units 21B, 21C and the outer peripheral temperature adjustment units 21D-21G are spaced apart in the radial direction Dr by an annular third divided region 22R that is continuous in the circumferential direction Dc. Adjacent outer peripheral temperature adjustment units 21D-21G in the circumferential direction Dc are spaced apart by four fourth divided regions 22S that are spaced apart in the circumferential direction Dc. Each fourth divided region 22S extends outward in the radial direction Dr from the third divided region 22R.

[0017] Each of the plurality of temperature adjustment sections 21 (inner circumferential temperature adjustment section 21A, intermediate temperature adjustment sections 21B and 21C, and outer circumferential temperature adjustment sections 21D to 21G) is formed, for example, from a Peltier element or from a sheet piece 23 with a built-in Peltier element. That is, the temperature adjustment sheet 2A includes a plurality of sheet pieces 23 having a predetermined shape. The temperature adjustment sheet 2A forms the first divided region 22P, second divided region 22Q, third divided region 22R, and fourth divided region 22S by arranging the plurality of sheet pieces 23 at intervals from one another.

[0018] The temperature of each of the plurality of temperature adjustment units 21 (sheet pieces 23) can be adjusted by an external controller (not shown). The controller (not shown) controls, for example, the supply of electricity to the Peltier element of each temperature adjustment unit 21 (sheet piece 23), thereby enabling the plurality of temperature adjustment units 21 to independently adjust the temperature.

[0019] As shown in FIG. 1, the cooling plate 8 is stacked on the lower side of the temperature adjusting sheet 2A in the up-down direction Dv. That is, in this embodiment, the cooling plate 8 is arranged on the opposite side of the top plate 3 in the stacking direction Ds. The cooling plate 8 is made of, for example, a metal such as copper or aluminum, a resin, or ceramic. The cooling plate 8 is arranged in close contact with the lower surface of the temperature adjusting sheet 2A. The cooling plate 8 absorbs heat radiated from the temperature adjusting sheet 2A to the lower side in the up-down direction Dv.

[0020] The top plate 3 is stacked above the temperature adjusting sheet 2A in the up-down direction Dv. That is, the top plate 3 in this embodiment is disposed on the opposite side to the cooling plate 8 in the stacking direction Ds. In other words, the lower surface of the top plate 3 is in contact with the upper surface of the temperature adjusting sheet 2A. The top plate 3 has a plate main body 31 and a heat insulating portion 32.

[0021] FIG. 3 is a cross-sectional view taken along line II-II in FIG. As shown in Fig. 3, in this embodiment, the outline of the plate body 31 when viewed in the vertical direction Dv (a direction perpendicular to the plane of Fig. 3) is, for example, circular. The plate body 31 is formed so as to cover the entire temperature adjusting sheet 2A from above (see Fig. 2). The plate body 31 is formed from a material such as an aluminum alloy or ceramics. The surface of the plate body 31 opposite the temperature adjusting sheet 2A serves as a semiconductor wafer mounting surface 31f. The mounting surface 31f intersects (is perpendicular to) the stacking direction Ds and is a smooth surface without grooves, recesses, or the like.

[0022] 1 and 3, the heat insulating portion 32 is formed inside the plate main body 31. The heat insulating portion 32 is disposed at a position corresponding to the dividing region 22 (in other words, at a position overlapping in the vertical direction Dv) when viewed from the stacking direction Ds (vertical direction Dv) of the temperature adjusting sheet 2A and the top plate 3. The heat insulating portion 32 in this embodiment has a space 33, a heat insulator 34, a fluid supply portion 36, and a fluid discharge portion 37.

[0023] The space 33 is formed inside the plate body 31. That is, the space 33 is not exposed (open) to the mounting surface 31f of the plate body 31 or the opposing surface 31g opposite thereto, which faces the temperature adjusting sheet 2A. The space 33 is formed at a predetermined interval in the stacking direction Ds on each of the mounting surface 31f and the opposing surface 31g of the plate body 31. The space 33 is formed continuously in a direction along a horizontal plane perpendicular to the stacking direction Ds within the plate body 31. In this embodiment, the space 33 is formed inside the plate body 31 at a position overlapping the dividing region 22 when viewed from the stacking direction Ds (vertical direction Dv). The space 33 has a first space 33P, a second space 33Q, a third space 33R, and a fourth space 33S.

[0024] The first space 33P has an annular shape when viewed from the stacking direction Ds, and is formed at a position overlapping the first dividing region 22P.

[0025] The second spaces 33Q extend in the radial direction Dr. The second spaces 33Q are arranged in two locations spaced apart in the circumferential direction Dc. In this embodiment, the second spaces 33Q are arranged on extensions of each other extending in the radial direction Dr. The second spaces 33Q are formed at positions overlapping the second dividing regions 22Q when viewed from the stacking direction Ds. The second spaces 33Q communicate with the first spaces 33P and a third space 33R, which will be described later.

[0026] The third space 33R has an annular shape when viewed from the stacking direction Ds, and is formed at a position overlapping the third dividing region 22R.

[0027] The fourth spaces 33S extend outward from the third spaces 33R in the radial direction Dr. The fourth spaces 33S are arranged at four locations spaced apart in the circumferential direction Dc. The fourth spaces 33S are formed at positions overlapping the fourth dividing region 22S when viewed from the stacking direction Ds.

[0028] The insulator 34 is disposed in the space 33. In this embodiment, for example, a liquid or gaseous fluid can be used as the insulator 34. The insulator 34 made of a fluid is supplied from outside the temperature control device 1A, flows to fill the space 33, and then is discharged to the outside of the temperature control device 1A. As the insulator 34, a material having a lower thermal conductivity than the plate body 31, for example, a liquid such as air, nitrogen gas, an inert gas, water, or a fluorine-based refrigerant can be used.

[0029] FIG. 4 is a plan view of the top plate of the temperature control device. 1 and 4 by the heat insulating section 32 when viewed from the stacking direction Ds (a direction perpendicular to the plane of FIG. 4). These zones S correspond to the temperature adjustment units 21 (inner periphery temperature adjustment unit 21A, intermediate temperature adjustment units 21B and 21C, and outer periphery temperature adjustment units 21D to 21G) shown in FIG. 2 when viewed from the stacking direction Ds (in other words, overlap in the up-down direction Dv). That is, the zones S include an inner periphery zone S1 corresponding to inner periphery temperature adjustment unit 21A, intermediate zones S2 and S3 corresponding to intermediate temperature adjustment units 21B and 21C, and outer periphery zones S4 to S7 corresponding to outer periphery temperature adjustment units 21D to 21G.

[0030] The fluid supply unit 36 supplies the fluid, which is the insulator 34, from the outside of the temperature control device 1A into the space 33. The fluid discharge unit 37 discharges the fluid, which is the insulator 34, from the space 33 to the outside of the temperature control device 1A. One end of the fluid supply unit 36 and one end of the fluid discharge unit 37 are each connected to the space 33. The other end of the fluid supply unit 36 and the other end of the fluid discharge unit 37 are each open toward the outside of the temperature control device 1A.

[0031] The fluid supply portion 36 and the fluid discharge portion 37 in this embodiment each extend downward in the stacking direction Ds (vertical direction Dv) from the space 33 formed in the plate body 31. The fluid supply portion 36 and the fluid discharge portion 37 in this embodiment are each arranged to communicate with the fourth space 33S. The fluid supply portion 36 and the fluid discharge portion 37 penetrate the temperature adjustment sheet 2A and the cooling plate 8 in the stacking direction Ds and open to the lower surface of the cooling plate 8.

[0032] A feed pipe (not shown) for feeding the heat insulator 34 from the outside by a pump (not shown) or the like is connected to the fluid supply unit 36. In addition, a discharge pipe (not shown) for discharging the heat insulator 34 to the outside is connected to the fluid discharge unit 37. The insulator 34 sent from the fluid supply unit 36 into the space 33 may be configured so that its temperature, pressure, flow rate, etc. can be adjusted as appropriate. In this case, a heat exchanger, pump, etc. for adjusting the temperature of the insulator 34 may be provided externally.

[0033] <Action and effect> The temperature control device 1A described above has multiple temperature control units 21 that can independently control the temperature. Therefore, the temperature of the semiconductor wafer placed on the mounting surface 31f of the plate body 31 of the top plate 3 can be controlled at different desired temperatures for each of the multiple zones S. The top plate 3 also has heat insulating units 32 arranged at positions corresponding to the divided regions 22 of the temperature control sheet 2A. Therefore, in the top plate 3, heat transferred from one temperature control unit 21 to one zone S of the temperature control sheet 2A is prevented from transferring to other zones S to which heat from other temperature control units 21 is transferred. Therefore, the temperature can be controlled well for each of the multiple zones S.

[0034] Furthermore, in the temperature control device 1A described above, the heat insulating section 32 has a space 33. This makes it possible to suppress heat conduction between adjacent zones S within the top plate 3 among the multiple zones S that correspond to the multiple temperature control sections 21 in the stacking direction Ds, respectively.

[0035] Furthermore, in the temperature control device 1A, a heat insulator 34 having a lower thermal conductivity than the plate body 31 is present in the space 33. This makes it possible to further suppress heat conduction between adjacent zones S of the top plate 3.

[0036] Furthermore, in the temperature control device 1A described above, a fluid acting as the insulator 34 is fed from the outside into the space 33 via the fluid supply unit 36, and the fluid acting as the insulator 34 that has flowed through the space 33 is discharged from the fluid discharge unit 37. This makes it possible to suppress temperature changes in the insulator 34 due to the heat of the multiple temperature control units 21. Therefore, it is possible to more efficiently suppress heat transfer between the multiple zones S of the top plate 3.

[0037] Furthermore, in the temperature control device 1A, the fluid supply portion 36 and the fluid discharge portion 37 extend in the stacking direction Ds and penetrate the temperature control sheet 2A. Therefore, the fluid as the heat insulator 34 can be introduced into and extracted from the space 33 from the side opposite to the semiconductor wafer mounting surface 31f. Furthermore, the heat exchanged with the zone S facing the space 33 can be transferred by the fluid in the stacking direction Ds.

[0038] Furthermore, in the temperature control device 1A, the mounting surface 31f is a smooth surface, which reduces the influence on the back surface of the wafer and also prevents foreign matter from getting into the grooves, which would occur if grooves were formed in the mounting surface 31f, making it easier to clean and maintain the mounting surface 31f.

[0039] Furthermore, in the temperature control device 1A, the temperature control sheet 2A has a plurality of sheet pieces 23 that form the temperature control portions 21. Therefore, by arranging adjacent sheet pieces 23 with a gap between them, the divided regions 22 can be easily formed.

[0040] (Modification of the above embodiment) FIG. 5 is a cross-sectional elevation view showing a schematic configuration of a wafer temperature adjustment device according to a modified embodiment of the present invention. In the above embodiment, the temperature adjusting sheet 2A is configured to use a Peltier element, but the present invention is not limited to this. For example, as shown in Fig. 5, an electric heater 28 may be used as the temperature adjustment sheet 2B of the temperature adjustment device 1B. The electric heater 28 has a plurality of sheet pieces 29. Each sheet piece 29 forms a plurality of temperature adjustment sections 21 that can be independently temperature adjusted, similar to the temperature adjustment sheet 2A of the above embodiment shown in Fig. 2. The sheet pieces 29 are arranged at intervals from each other, so that the plurality of temperature adjustment sections 21 are separated from each other by dividing regions 22 within the same plane.

[0041] When the electric heater 28 is provided, a purge plate 50 may be disposed below the electric heater 28 at a distance in the up-down direction Dv. This forms a purge space 51 between the electric heater 28 and the purge plate 50. When the temperature of the electric heater 28 is reduced, air is purged from the outside into this purge space 51, thereby enabling the temperature of the electric heater 28 to be reduced efficiently.

[0042] Furthermore, when the purge plate 50 is provided, the fluid supply portion 36 and the fluid discharge portion 37 may be tubular and may be provided so as to penetrate the purge space 51 and the purge plate 50 from the temperature adjusting sheet 2B.

[0043] (Other variations) In the above embodiment and its modified example, the plurality of temperature adjustment units 21 constituting the temperature adjustment sheets 2A and 2B are divided into the inner peripheral temperature adjustment unit 21A, the middle temperature adjustment units 21B and 21C, and the outer peripheral temperature adjustment units 21D to 21G, but this is not limitative. The number and division pattern of the plurality of temperature adjustment units 21 constituting the temperature adjustment sheet 2A can be changed as appropriate. Furthermore, although the temperature adjusting sheet 2A has been described as having the first divided region 22P, the second divided region 22Q, the third divided region 22R, and the fourth divided region 22S, these first divided region 22P, the second divided region 22Q, the third divided region 22R, and the fourth divided region 22S may be omitted, and the first divided region 22P, the second divided region 22Q, the third divided region 22R, and the fourth divided region 22S that are adjacent to each other in the circumferential direction Dc and the radial direction Dr may be adjacent to each other.

[0044] Furthermore, although the space 33 is not exposed (opened) to the mounting surface 31f and the opposing surface 31g of the plate body 31, this is not limitative. For example, the space 33 may be open to the opposing surface 31g and communicate with the divided regions 22 of the temperature adjusting sheet 2A. In this case, the heat insulator 34 may be supplied to or filled not only in the space 33 but also in the divided regions 22.

[0045] Furthermore, although the above embodiment has been described with reference to a case where only one space 33 is provided, the present invention is not limited to this. For example, the space 33 may be divided into a plurality of spaces. In the above embodiment, one fluid supply section 36 and one fluid discharge section 37 are provided for one space 33, but this is not limiting. For example, a plurality of fluid supply sections 36 and a plurality of fluid discharge sections 37 may be provided for one space 33.

[0046] Although the case where a single space 33 is provided in the plate body 31 has been described, it is also possible to provide multiple spaces 33 that are not connected to each other in the plate body 31, and supply and discharge the heat insulator 34 to and from each space 33.

[0047] Furthermore, although the heat insulating section 32 is constituted by a fluid heat insulator 34 supplied from outside the temperature control device 1A, this is not limiting. For example, the heat insulating section 32 may simply be filled (in other words, enclosed) in the space 33. Alternatively, the heat insulating section 32 may be constituted by filling the space 33 with a solid heat insulating material, such as carbon fiber, having heat insulating properties. Alternatively, the heat insulating section 32 may be constituted by evacuating the space 33 with a gas having a pressure lower than atmospheric pressure, which has been evacuated using a vacuum pump or the like. Alternatively, the space 33 may be connected to the upper space 6A, for example. This allows the heat insulating section 32 to be constituted by evacuating the space 33 in the same vacuum state as the upper space 6A. [Explanation of symbols]

[0048] 1A, 1B...Wafer temperature control device 2A, 2B...Temperature control sheet 3...Top plate 5...Chamber 6A...Upper space 6B...Lower space 8...Cooling plate 21...Temperature control section 21A...Inner peripheral temperature control section 21B, 21C...Intermediate temperature control section 21D, 21E, 21F, 21G...Peripheral temperature control section 22...Divided region 22P...First divided region 22Q...Second divided region 22R...Third divided region 22S...Fourth divided region 23...Sheet piece 28...Electric heater 29...Sheet piece 31...Plate body 31f...Placement surface 31g...Face-to-face surface 32...Insulation section 33...Space 33P...First space 33Q...Second space 33R...Third space 33S...Fourth space 34...Insulation body 36...Fluid supply section 37...Fluid discharge section 50...Purge plate 51...Purge space Dc...Circumferential direction Dr...Radial direction Ds...Stacking direction Dv...Vertical direction S...Zone S1...Inner peripheral zone S2, S3...Intermediate zone S4, S5, S6, S7...Outer peripheral zone

Claims

1. a temperature adjusting sheet having a plurality of sheet pieces which are divided from each other via dividing regions within the same plane and form a plurality of temperature adjusting sections each capable of independently adjusting temperature; a top plate having a plate body laminated on the temperature adjustment sheet, the surface opposite to the temperature adjustment sheet being a semiconductor wafer mounting surface, the surface being a smooth surface intersecting the stacking direction; Equipped with The top plate is a heat insulating portion that is disposed in a position corresponding to the divided region of the temperature adjusting sheet in the plate body when viewed from the stacking direction of the temperature adjusting sheet and the top plate, and has a space formed in the plate body and has a thermal conductivity lower than that of the plate body; The divided regions include a first divided region extending in a circumferential direction and a second divided region extending in a radial direction, The heat insulating portion includes a first heat insulating portion disposed at a position corresponding to the first dividing region and a second heat insulating portion disposed at a position corresponding to the second dividing region. Semiconductor wafer temperature control device.

2. 2. The wafer temperature adjusting device according to claim 1, wherein the heat insulating portion further comprises a heat insulating material that is supplied or filled in the space and has a thermal conductivity lower than that of the plate body.

3. the thermal insulator is a fluid; a fluid supply unit that supplies the fluid into the space from the outside; a fluid discharge portion that discharges the fluid from the space to the outside; The wafer temperature adjustment apparatus of claim 2 further comprising:

4. 4. The wafer temperature adjustment device according to claim 3, wherein the fluid supply portion and the fluid discharge portion are disposed so as to extend from the plate body in the stacking direction and penetrate the temperature adjustment sheet.

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