Display panel preparation method, display panel and electronic device

Abstract

A method for preparing a display panel, a display panel, and an electronic device are disclosed. According to the method for preparing a display panel according to the embodiment of the present application, a TFT element is prepared on a TFT substrate, and then the TFT element is transferred from the TFT substrate to a circuit board by double transfer, and a light-emitting element is transferred to the circuit board, thereby obtaining a display panel driven by a TFT element, which has low manufacturing cost and can realize good electrical performance of the display panel.

Description

[Technical Field]

[0001] The present application relates to the field of display technology, and in particular to a method for preparing a display panel, a display panel, and an electronic device. [Background technology]

[0002] LED (light-emitting diode) displays are the next generation display technology after LCD and OLED displays. LED display panels use LED chips (such as MicroLED or MiniLED chips) as pixel units, arranged in an array, and each chip can be independently driven to light up and emit light. LED display panels have many advantages, including self-luminous, high efficiency, long life, and ultra-high resolution. Summary of the Invention

[0003] Conventionally, the working environment for solar panels is limited to outdoors. The problem is not wind, rain, or lightning, but dust that has accumulated over the years. Dust or other deposits on solar panels affect the panel's transmittance and hinder photoelectric efficiency, severely impacting the panel's ability to directly capture sunlight, reducing the panel's energy absorption and conversion efficiency, and lowering power generation efficiency. One method for preparing LED display panels is to sequentially transfer an IC chip and an LED chip onto a circuit-laid substrate. The LED chip can be a MicroLED or MiniLED chip, but the high cost of the IC chip increases the manufacturing cost of the LED display panel.

[0004] According to the embodiments of the present application, a method for preparing a display panel, a display panel, and an electronic device are provided, and the method for preparing a display panel has low manufacturing costs and the prepared display panel has good electrical performance.

[0005] In a first aspect, according to an embodiment of the present application, a TFT substrate including a first substrate and a plurality of TFT elements provided on the first substrate, the TFT elements including an anchor layer and an element layer that are sequentially stacked, a sacrificial layer is provided between the first substrate and the anchor layer, the anchor layer including a first body and a connection portion that are connected to each other, the first body is provided on one side of the sacrificial layer that is spaced apart from the first substrate, and the connection portion has one side connected to the first body and the other side connected to the first substrate; removing the sacrificial layer on the TFT substrate so that the TFT element is connected to the first substrate via the connecting portion of the anchor layer; obtaining a first transfer substrate so that the TFT elements are separated from the first substrate, and selectively picking up the TFT elements on the TFT substrate using the first transfer substrate, thereby breaking the connection portions of the anchor layers in the picked-up TFT elements; obtaining a second transfer substrate and transferring the TFT elements picked up on the first transfer substrate to the second transfer substrate; obtaining a circuit board including a second substrate and a TFT connection circuit and a light-emitting element connection circuit provided on the second substrate, and transferring the TFT elements on the second transfer substrate to the circuit board and connecting them to the TFT connection circuit; a method for preparing a display panel, the method including the steps of obtaining a light-emitting element, transferring the light-emitting element to the circuit board, and connecting the light-emitting element to the light-emitting element connecting circuit, so as to prepare a display panel.

[0006] In some embodiments, the first transfer substrate and the second transfer substrate both have adhesiveness, and the adhesive strength between the second transfer substrate and the TFT element is greater than the adhesive strength between the first transfer substrate and the TFT element.

[0007] In some embodiments, the material of the first transfer substrate includes polydimethylsiloxane having a molecular weight of 1,000 to 5,000, and the material of the second transfer substrate includes polydimethylsiloxane having a molecular weight of 10,000 or more.

[0008] In some embodiments, the first transfer substrate includes a second body and a convex portion provided on the second body, and selectively picking up the TFT elements in the TFT substrate using the first transfer substrate includes selectively picking up the TFT elements using the convex portion of the first transfer substrate.

[0009] In some embodiments, the material of the anchor layer includes at least one of silicon oxide and silicon nitride, and the thickness of the anchor layer is 0.5 μm to 2 μm.

[0010] In some embodiments, a material of the sacrificial layer comprises amorphous silicon, and removing the sacrificial layer on the TFT substrate comprises removing the sacrificial layer on the TFT substrate by selective etching.

[0011] In some embodiments, the device layer includes a gate, a gate insulating layer, an active layer, and a source / drain layer, which are sequentially stacked on an anchor layer, the source / drain layer being made of a metal, and the TFT connection circuit being made of a metal; Transferring the TFT elements on the second transfer substrate to the circuit board and connecting them to the TFT connection circuit includes connecting the source / drain layers of the TFT elements to the TFT connection circuit by eutectic bonding.

[0012] In some embodiments, the material of the source-drain layer and the material of the TFT connecting circuit are a combination of tin and silver, a combination of tin and copper, or a combination of tin and gold.

[0013] In some embodiments, the light emitting element is a MiniLED or a MicroLED.

[0014] In a second aspect, according to an embodiment of the present application, a circuit board including a second substrate, a TFT connection circuit and a light emitting element connection circuit provided on the second substrate; a source / drain layer, an active layer, a gate insulating layer, a gate and an anchor layer, which are sequentially stacked on the circuit board and are provided on the circuit board so as to be connected to the TFT connection circuit, and the source / drain layer is a TFT element connected to the TFT connection circuit; a light emitting element provided on the circuit board so as to be connected to the light emitting element connecting circuit.

[0015] In some embodiments, the material of the source / drain layer is metal, the material of the TFT connection circuit is metal, and a eutectic junction structure is formed between the source / drain layer and the TFT connection circuit.

[0016] In some embodiments, the material of the source-drain layer and the material of the TFT connecting circuit are a combination of tin and silver, a combination of tin and copper, or a combination of tin and gold.

[0017] In some embodiments, the material of the anchor layer includes at least one of silicon oxide and silicon nitride, and the thickness of the anchor layer is 0.5 μm to 2 μm.

[0018] In a third aspect, according to an embodiment of the present application, there is provided an electronic device including the display panel described above. [Effects of the Invention]

[0019] According to the display panel preparation method of the embodiment of the present application, TFT elements are prepared on a TFT substrate, and then the TFT elements are transferred from the TFT substrate to a circuit board by double transfer, and the light-emitting elements are transferred to the circuit board, thereby obtaining a display panel driven by TFT elements. Compared with the conventional preparation method of transferring IC chips, the display panel preparation method of the embodiment of the present application has lower manufacturing costs, and the thickness of the TFT connection circuit and the light-emitting element connection circuit in the display panel prepared in the embodiment of the present application can be set to be large, so that the display panel can achieve good electrical performance. [Brief explanation of the drawings]

[0020] In order to more clearly describe the technical solutions in the embodiments of the present application, the following briefly describes the drawings that need to be used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other drawings based on these drawings without creative efforts.

[0021] For a more complete understanding of the present invention and its advantageous advantages, reference is now made to the following drawings, in which like reference numerals refer to like parts throughout the following description.

[0022] [Figure 1] 1 is a flowchart of a method for preparing a display panel according to an embodiment of the present application. [Figure 2] 1 is a schematic diagram showing the structure of a TFT substrate according to an embodiment of the present application. [Figure 3] FIG. 2 is a schematic diagram illustrating the removal of a sacrificial layer in a TFT substrate in an embodiment of the present application. [Figure 4] FIG. 2 is a schematic diagram showing selective pick-up of TFT elements on a TFT substrate using a first transfer substrate in an embodiment of the present application. [Figure 5] FIG. 2 is a schematic diagram showing selective pick-up of TFT elements on a TFT substrate using a first transfer substrate in an embodiment of the present application. [Figure 6]FIG. 2 is a schematic diagram showing how a TFT element picked up on a first transfer substrate is transferred to a second transfer substrate in an embodiment of the present application. [Figure 7] FIG. 4 is a schematic diagram showing the transfer of TFT elements on a second transfer substrate to a circuit board in an embodiment of the present application. [Figure 8] 1 is a schematic diagram showing the structure of a display panel prepared in an example of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0023] Hereinafter, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, and are not all of the embodiments. All other embodiments that can be obtained based on the embodiments of the present application without the need for creative efforts by those skilled in the art are all within the scope of protection of the present application.

[0024] 1, which is a flowchart of a method for preparing a display panel according to an embodiment of the present application. According to an embodiment of the present application, there is provided a method for preparing a display panel, including:

[0025] In 100, a TFT substrate 10 is obtained which includes a first substrate 11 and a plurality of TFT elements 12 provided on the first substrate 11, wherein the TFT elements 12 include an anchor layer 121 and an element layer which are sequentially stacked, a sacrificial layer 135 is provided between the first substrate 11, the anchor layer 121 includes a first body 101 and a connection portion 102 which are connected to each other, the first body 101 is provided on one side of the sacrificial layer 135 spaced from the first substrate 11, and the connection portion 102 has one side connected to the first body 101 and the other side connected to the first substrate 11.

[0026] 2, which is a schematic diagram showing the structure of a TFT substrate according to an embodiment of the present application. The element layer may include a gate 131, a gate insulating layer 132, an active layer 133, and a source / drain layer 134, which are sequentially stacked on an anchor layer 121. The source / drain layer 134 may include a source 103 and a drain 104 that are spaced apart and connected to the active layer 133.

[0027] For example, the anchor layer 121 may be highly brittle and thin, so that when the sacrificial layer 135 in the TFT substrate 10 is removed, the TFT element 12 is connected to the first substrate 11 only via the connection portion 102 of the anchor layer 121, and since the connection portion 102 is highly brittle and thin, it is easily broken, allowing the TFT element 12 to be detached from the TFT substrate 10.

[0028] For example, the material of the anchor layer 121 may include at least one of silicon oxide and silicon nitride, and the thickness of the anchor layer 121 may be 0.5 μm to 2 μm (e.g., 0.5 μm, 0.7 μm, 1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 2 μm, etc.).

[0029] Illustratively, the material of the sacrificial layer 135 may include amorphous silicon.

[0030] Illustratively, the material of the active layer 133 may be a semiconductor material, such as amorphous silicon, polysilicon, or a metal oxide semiconductor material.

[0031] Illustratively, the material of the gate 131 may include at least one of molybdenum, aluminum, copper, and titanium, and the material of the gate insulating layer 132 may include at least one of silicon oxide and silicon nitride.

[0032] Illustratively, the first substrate 11 may be a rigid substrate such as a glass substrate.

[0033] In 200 , the sacrificial layer 135 in the TFT substrate 10 is removed so that the TFT elements 12 are connected to the first substrate 11 via the connecting portions 102 of the anchor layer 121 .

[0034] 3, which is a schematic diagram illustrating the removal of the sacrificial layer in the TFT substrate in an embodiment of the present application. When the material of the sacrificial layer 135 is amorphous silicon, "removing the sacrificial layer 135 in the TFT substrate 10" may specifically include removing the sacrificial layer 135 in the TFT substrate 10 by selective etching. That is, the sacrificial layer 135 can be removed by etching the TFT substrate 10 using an etchant that can etch only amorphous silicon but cannot etch other film layers in the TFT elements 12.

[0035] In 300, a first transfer substrate 20 is obtained so that the TFT elements 12 are separated from the first substrate 11, and the first transfer substrate 20 is used to selectively pick up the TFT elements 12 on the TFT substrate 10, thereby breaking the connection portion 102 of the anchor layer 121 in the picked-up TFT elements 12.

[0036] 4 and 5, which are schematic diagrams illustrating selective pick-up of TFT elements on a TFT substrate using a first transfer substrate in an embodiment of the present application. The first transfer substrate 20 may have adhesive properties so that the adhesive properties of the first transfer substrate 20 can be used to pick up the TFT elements 12 from the TFT substrate 10.

[0037] For example, the first transfer substrate 20 includes a second body 21 and a convex portion 22 provided on the second body 21, and "selectively picking up the TFT elements 12 on the TFT substrate 10 using the first transfer substrate 20" may specifically include selectively picking up the TFT elements 12 using the convex portion 22 of the first transfer substrate 20. That is, since the convex portion 22 can be provided on the second body 21 in correspondence with the position of the TFT element 12 that needs to be picked up, after the TFT element 12 is pressed against the convex portion 22, the TFT elements 12 on the TFT substrate 10 that are connected to the convex portion 22 may be picked up, and the TFT elements 12 that are not connected to the convex portion 22 may not be picked up.

[0038] For example, the protrusions 22 may have elasticity so that they can be deformed to fit the shape of the TFT elements 12 when the protrusions 22 are pressed against the TFT elements 12 .

[0039] For example, the surface of one side of the protrusion 22 that is away from the second body 21 may be a flat surface, a convex arc surface, a concave arc surface, or the like.

[0040] For example, the material of the first transfer substrate 20 may be polydimethylsiloxane (PDMS).

[0041] In 400, the second transfer substrate 30 is obtained, and the TFT elements 12 picked up on the first transfer substrate 20 are transferred onto the second transfer substrate 30.

[0042] 6 is a schematic diagram showing the transfer of TFT elements picked up by the first transfer substrate to the second transfer substrate in an embodiment of the present application. The second transfer substrate 30 may have adhesiveness such that the adhesiveness of the second transfer substrate 30 is greater than the adhesiveness of the first transfer substrate 20. When the adhesive strength between the second transfer substrate 30 and the TFT elements 12 is greater than the adhesive strength between the first transfer substrate 20 and the TFT elements 12, the TFT elements 12 on the first transfer substrate 20 can be transferred to the second transfer substrate 30 by taking advantage of the greater adhesiveness of the second transfer substrate 30.

[0043] For example, the material of the first transfer substrate 20 may be polydimethylsiloxane with a molecular weight of 1000 to 5000, and the material of the second transfer substrate 30 may be polydimethylsiloxane with a molecular weight of 10000 or more.

[0044] In 500, a circuit board 40 including a second substrate 41 and a TFT connection circuit 42 and a light-emitting element connection circuit 43 provided on the second substrate 41 is obtained, and the TFT element 12 on the second transfer substrate 30 is transferred to the circuit board 40 and connected to the TFT connection circuit 42.

[0045] 7 is a schematic diagram illustrating the transfer of the TFT elements on the second transfer substrate to a circuit board in an embodiment of the present application. The material of the source / drain layer 134 may be metal, and the material of the TFT connection circuit 42 may also be metal. "Transferring the TFT elements 12 on the second transfer substrate 30 to the circuit board 40 and connecting them to the TFT connection circuit 42" may specifically include connecting the source / drain layer 134 of the TFT elements 12 to the TFT connection circuit 42 by eutectic bonding. Because the tensile strength of the eutectic bonding structure between the source / drain layer 134 and the TFT connection circuit 42 is high, i.e., the bonding strength of the eutectic bonding structure is significantly greater than the adhesive strength between the TFT elements 12 and the second transfer substrate 30, the second transfer substrate 30 can be peeled off from the TFT elements 12 so that the TFT elements 12 remain on the circuit board 40.

[0046] Eutectic bonding refers to the process in which two metals that can form a eutectic at the eutectic temperature come into contact with each other, diffuse into each other, and then form a liquid phase alloy with eutectic components between them. This process continues over time, and the liquid phase layer continues to thicken. After cooling, the liquid phase layer continuously precipitates two metals alternately, and each metal grows and crystallizes based on its own original solid phase, so that the eutectic between the two metals can tightly bond the two metals.

[0047] For example, the material of the source / drain layer 134 and the material of the TFT connection circuit 42 are a combination of tin and silver, a combination of tin and copper, or a combination of tin and gold. Note that the combination of tin and silver means that one of the source / drain layer 134 and the TFT connection circuit 42 is made of tin and the other is made of silver, and the combination of tin and copper and the combination of tin and gold are the same.

[0048] The gate 131 of the TFT element 12 also needs to be connected to the TFT connection circuit 42. For example, a via hole may be provided in the gate insulating layer 132 below the gate 131, a conductor connected to the gate 131 may be provided in the via hole, and then a portion of the conductor exposed from one end of the via hole away from the gate 131 may be connected to the TFT connection circuit 42. In other words, the TFT connection circuit 42 includes not only circuits connected to the source 103 and drain 104 but also circuits connected to the gate 131. For example, the connection between the conductor connected to the gate 131 and the TFT connection circuit 42 may be a eutectic junction.

[0049] For example, the second substrate 41 of the circuit board 40 may be a rigid substrate or a flexible substrate, and the rigid substrate may be a glass substrate or the like, and the material of the flexible substrate may be a polymer material such as polyimide or polyester.

[0050] For example, the material of the TFT connection circuit 42 and the material of the light-emitting element connection circuit 43 may both be a metal such as copper.

[0051] For example, the thickness of the TFT connection circuit 42 and the thickness of the light-emitting element connection circuit 43 may both be 10 μm or more (for example, 10 μm, 15 μm, 20 μm, 25 μm, 35 μm, 40 μm, etc.).

[0052] At 600, the light emitting elements 50 are obtained, and the light emitting elements 50 are transferred onto the circuit board 40 and connected to the light emitting element connecting circuit 43 so that the display panel 100 is prepared.

[0053] 8, which is a schematic diagram showing the structure of a display panel prepared in the embodiment of the present application. The light-emitting element 50 may be a MicroLED, and the display panel 100 prepared in the embodiment of the present application is a MicroLED display panel.

[0054] For example, the light-emitting element 50 may be a MiniLED, and the display panel 100 prepared in the embodiment of the present application is a MiniLED display panel.

[0055] For example, the dimensions of a Mini LED may be 100 μm to 200 μm, and the dimensions of a Micro LED may be 30 μm or less.

[0056] For example, the light emitting element 50 may be connected to the light emitting element connecting circuit 43 by soldering.

[0057] As can be seen from the above, according to the technical solution of the present application, compared to the conventional technical solution of first preparing the TFT elements 12 on the TFT substrate 10 and then transferring the TFT elements 12 to the circuit board 40, the manufacturing cost of the TFT elements 12 is significantly lower than the manufacturing cost of the MicroIC, thereby significantly reducing the manufacturing cost of the display panel.

[0058] Another conventional method for preparing a MicroLED display panel involves first preparing a TFT substrate on which TFT elements, TFT connection circuits, light-emitting element connection circuits, etc. are formed, and then transferring the MicroLEDs to the TFT substrate to obtain a MicroLED display panel. However, the problem with this method is that the TFT connection circuits, light-emitting element connection circuits, and TFT elements are prepared in the same manufacturing process, and the film layers in the TFT elements are thin, so the thicknesses of the TFT connection circuits and light-emitting element connection circuits are also thin, which in turn results in poor signal conduction performance of the TFT connection circuits and light-emitting element connection circuits, resulting in poor electrical performance of the MicroLED display panel. According to the embodiments of the present application, the TFT elements 12 are prepared on the TFT substrate 10, and the TFT connection circuits 42 and light-emitting element connection circuits 43 are prepared on the circuit board 40, so that the TFT elements 12, the TFT connection circuits 42, and the light-emitting element connection circuits 43 are prepared separately. In other words, by separating the manufacturing process of the TFT connection circuits 42 and the light-emitting element connection circuits 43 from the manufacturing process of the TFT elements 12, the thicknesses of the TFT connection circuits 42 and the light-emitting element connection circuits 43 are no longer limited by the thickness of the TFT elements 12, and the TFT connection circuits 42 and the light-emitting element connection circuits 43 can be prepared to have a large thickness (10 μm or more). As a result, the TFT connection circuits 42 and the light-emitting element connection circuits 43 have good signal conduction performance, and ultimately the display panel 100 has good electrical performance.

[0059] As described above, according to the method for preparing a display panel in the embodiment of the present application, TFT elements 12 are prepared on a TFT substrate 10, and then the TFT elements 12 are transferred from the TFT substrate 10 to a circuit board 40 by double transfer, and light-emitting elements 50 are transferred to the circuit board 40, thereby obtaining a display panel 100 driven by TFT elements. Compared with the conventional preparation method of transferring an IC chip, the method for preparing a display panel 100 in the embodiment of the present application has lower manufacturing costs, and the TFT connection circuit 42 and the light-emitting element connection circuit 43 in the display panel 100 prepared in the embodiment of the present application can be set to a large thickness, so that the display panel 100 can achieve good electrical performance.

[0060] In conjunction with Figure 8, according to an embodiment of the present application, there is further provided a display panel 100 that can be prepared by the preparation method in any of the above embodiments, and the display panel 100 may include a circuit board 40, a TFT element 12 and a light-emitting element 50 provided on the circuit board 40, and the circuit board 40 includes a second substrate 41, a TFT connection circuit 42 and a light-emitting element connection circuit 43 provided on the second substrate 41, and the light-emitting element 50 is connected to the light-emitting element connection circuit 43.

[0061] The TFT element 12 is connected to the TFT connection circuit 42 and includes a source / drain layer 134, an active layer 133, a gate insulating layer 132, a gate 131 and an anchor layer 121 stacked in sequence on the circuit board 40, where the source / drain layer 134 is connected to the TFT connection circuit 42.

[0062] Illustratively, the material of the source / drain layer 134 is metal, the material of the TFT connection circuit 42 is metal, and a eutectic junction structure is formed between the source / drain layer 134 and the TFT connection circuit 42 .

[0063] A via hole may be provided in the gate insulating layer 132, and a conductive wire connected to the gate 131 may be provided in the via hole, and one end of the conductive wire away from the gate 131 may be provided so as to be connected to the TFT connection circuit 42, and for example, the connection between the conductive wire connected to the gate 131 and the TFT connection circuit 42 may be a eutectic junction.

[0064] Illustratively, the material of the source-drain layer 134 and the material of the TFT connecting circuit 42 are a combination of tin and silver, a combination of tin and copper, or a combination of tin and gold.

[0065] For example, the material of the anchor layer 121 may include at least one of silicon oxide and silicon nitride, and the thickness of the anchor layer 121 may be 0.5 μm to 2 μm (e.g., 0.5 μm, 0.7 μm, 1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 2 μm, etc.).

[0066] For example, the material of the TFT connection circuit 42 and the material of the light-emitting element connection circuit 43 may both be a metal such as copper.

[0067] For example, the thickness of the TFT connection circuit 42 and the thickness of the light-emitting element connection circuit 43 may be 10 μm or more (for example, 10 μm, 15 μm, 20 μm, 25 μm, 35 μm, 40 μm, etc.).

[0068] According to an embodiment of the present application, there is further provided an electronic device including the display panel 100 according to any of the above embodiments.

[0069] For example, the electronic device may be a device having a display such as a television, a mobile phone, a tablet, an LCD display, a game console, or a wearable device, where the wearable device may be a smart bracelet, smart glasses, a smart watch, smart decoration, or the like.

[0070] The above provides a detailed description of the display panel preparation method, display panel, and electronic device according to the embodiments of the present application. While specific examples are used in this specification to describe the principles and embodiments of the present application, the above examples are only intended to aid in understanding the present application. At the same time, those skilled in the art will recognize that specific embodiments and application scope may vary based on the concept of the present application, and therefore the contents of this specification should not be construed as limiting the present application.

Claims

1. obtaining a TFT substrate including a first substrate and a plurality of TFT elements provided on the first substrate, the TFT elements including an anchor layer and an element layer that are sequentially stacked, a sacrificial layer being provided between the first substrate and the anchor layer, the anchor layer including a first body and a connection portion that are connected to each other, the first body being provided on one side of the sacrificial layer that is spaced apart from the first substrate, one side of the connection portion being connected to the first body and the other side being connected to the first substrate; removing the sacrificial layer on the TFT substrate so that the TFT element is connected to the first substrate via the connecting portion of the anchor layer; obtaining a first transfer substrate, and selectively picking up the TFT elements on the TFT substrate using the first transfer substrate, so that the TFT elements having the first bodies are separated from the first substrate of the TFT substrate, thereby breaking the connection portions of the anchor layer in the picked-up TFT elements from the first bodies of the anchor layer; obtaining a second transfer substrate, and transferring the TFT element having the first body picked up on the first transfer substrate to the second transfer substrate; obtaining a circuit board including a second substrate and a TFT connection circuit and a light-emitting element connection circuit provided on the second substrate, and transferring the TFT elements on the second transfer substrate to the circuit board and connecting them to the TFT connection circuit; obtaining a light-emitting element, transferring the light-emitting element to the circuit board, and connecting the light-emitting element connecting circuit, so as to prepare a display panel; A method for preparing a display panel.

2. the first transfer substrate and the second transfer substrate both have adhesiveness, and the adhesive force between the second transfer substrate and the TFT element is greater than the adhesive force between the first transfer substrate and the TFT element; A method for preparing the display panel of claim 1.

3. the material of the first transfer substrate includes polydimethylsiloxane having a molecular weight of 1,000 to 5,000, and the material of the second transfer substrate includes polydimethylsiloxane having a molecular weight of 10,000 or more; A method for preparing the display panel according to claim 2.

4. the first transfer substrate includes a second body and a convex portion provided on the second body, and selectively picking up the TFT elements on the TFT substrate using the first transfer substrate includes selectively picking up the TFT elements using the convex portion of the first transfer substrate. A method for preparing the display panel of claim 1.

5. the protrusion has a surface on one side away from the second body that is a flat surface, a convex arc surface, or a concave arc surface; A method for preparing the display panel according to claim 4.

6. the material of the anchor layer includes at least one of silicon oxide and silicon nitride; A method for preparing the display panel of claim 1.

7. The thickness of the anchor layer is 0.5 μm to 2 μm. A method for preparing the display panel of claim 1.

8. a material of the sacrificial layer including amorphous silicon, and removing the sacrificial layer from the TFT substrate includes removing the sacrificial layer from the TFT substrate by selective etching; A method for preparing the display panel of claim 1.

9. the element layer includes a gate, a gate insulating layer, an active layer, and a source / drain layer that are sequentially stacked on the anchor layer, the source / drain layer being made of a metal, and the TFT connection circuit being made of a metal; transferring the TFT elements on the second transfer substrate to the circuit board and connecting them to the TFT connection circuit includes connecting the source / drain layers of the TFT elements to the TFT connection circuit by eutectic bonding; A method for preparing the display panel of claim 1.

10. the material of the source / drain layer and the material of the TFT connection circuit are a combination of tin and silver, a combination of tin and copper, or a combination of tin and gold; A method for preparing the display panel according to claim 9.

11. The light-emitting element is a MiniLED or a MicroLED. A method for preparing the display panel of claim 1.

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