Centered Arc Ion Plating Deposition Equipment

Abstract

To provide a centered arc ion plating vapor deposition device capable of producing a vapor deposition object having a high quality coating layer.SOLUTION: A centered arc ion plating vapor deposition device 1 includes: a vacuum chamber; a cylindrical target member arranged above and under a center part of the vacuum chamber, supplied with a voltage, and emitting a target substance; gas injection means 30 for injecting process gas into the vacuum chamber inside the vacuum chamber; a mask device 70 installed to the gas injection means 30 and controlling diffusion of the target substance and the process gas; and cooling means arranged on the target member to prevent overheating of the target member. The cooling means includes a guide pipe formed inside the target member and arranged in a hollow manner, a supporting stand arranged at one side end of the target member and fastened to the guide pipe, an injection hole formed on the supporting stand so that cooling water is injected between the guide pipe and the target member, and an exhaust port of the injected cooling water.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to a centered arc ion plating evaporator. [Background technology]

[0002] PVD (Physical Vapor Deposition) sputtering is a method of depositing thin films on a material surface (substrate) by utilizing the phenomenon in which atoms or molecules on the solid surface absorb the momentum of accelerated, high-energy particles (mostly ions accelerated by an electric field) as they collide with the surface of a solid (target) and then fly off the solid surface with that momentum. PVD sputtering is broadly divided into direct current (DC) sputtering and radio frequency (RF) sputtering, depending on the method used to generate glow discharge. In DC sputtering, a cathode and an anode are placed parallel to each other, approximately 5-15 cm apart, and a DC power source is used to generate glow discharge between them. In the plasma created, Ar+ ions are accelerated and collide with the cathode, sputtering the target material. In RF sputtering, radio frequency (RF) power is used instead of DC power to deposit insulators.

[0003] PVD ion plating is a method of forming a thin film by ionizing some of the deposited atoms or molecules, accelerating them in an electric field to create a high-energy state, and adsorbing them onto a substrate placed in a vacuum. PVD ion plating uses collision energy to mix the deposited particles, creating a dense, high-strength thin film, which is highly effective in hardening the surface of materials and is mainly used for wear-resistant coatings on tool steels such as drill bits and saw blades.

[0004] As such, various deposition technologies have been developed, and one of these is applied depending on the type and characteristics of the deposition target.One of these is arc ion plating, a centered deposition device that discharges a high-current arc above and below a water-cooled pipe-shaped target such as titanium, zirconium, or chromium located in the center of the chamber (Korean Patent Publication No. 10-2022-0114676, Korean Registered Patent No. 1020773, Korean Registered Patent No. 1618209, Korean Registered Patent No. 2203825, Korean Registered Patent No. 0642175, U.S. Registered Patent No. 5269898, U.S. Registered Patent No. 2005-0044500, Japanese Registered Patent No. 5167282, Japanese Registered Patent No. 5847054). This arc vaporizes the target material in a plasma state, sending ionized atoms to the coating target. When a bias voltage is applied, the deposition speed of the ionized atoms accelerates. Depending on the coating method, reactive gases such as nitrogen, oxygen, and acetylene are introduced into the chamber to form thin films of nitrides, oxides, carbides, etc. These gases react with the ionized atoms to create colors with various coating properties.

[0005] However, in the case of a centered deposition device, due to the structural feature of multiple jigs surrounding a centrally located electrode, it is known to be technically very difficult to control the uniform movement of ions from the electrode to the surface of the deposition target placed on the multiple jigs. Prior art (Korean Patent Registration Nos. 0879380, 2118319, and 1718094) has addressed this issue by configuring the jig device to rotate on its own axis, or by allowing the deposition target placed on the jig device to rotate or change its position. However, this has the problem of requiring the jig device to be redesigned to suit the type and size of the deposition target, and the aforementioned problem has been known to be a technical challenge because a high-quality, uniform coating layer cannot be obtained simply by rotating the jig device or rotating the deposition target.

[0006] In this regard, Korean Patent Publication No. 1766204 discloses a screen surrounding a cathode electrode. Such a screen functions to remove large particles. U.S. Patent Publication No. 2005-0044500 introduces a technique for installing a screen adjacent to an anode and controlling the amount of particles passing through by controlling the position of the screen. However, while this technique can prevent large particles from being deposited on the deposition target, it does not guarantee that a uniform coating layer will be obtained on the surface of the deposition target. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Korean Patent Publication No. 10-2022-0114676 [Patent Document 2] Korean Patent Registration No. 1020773 [Patent Document 3] Korean Patent Registration No. 1618209 [Patent Document 4] Korean Patent Registration No. 2203825 [Patent Document 5] Korean Patent Registration No. 0642175 [Patent Document 6] U.S. Patent Publication No. 5,269,898 [Patent Document 7] U.S. Patent Publication No. 2005-0044500 [Patent Document 8] Japanese Patent Registration No. 5167282 [Patent Document 9] Japanese Patent Registration No. 5847054 [Patent Document 10] Korean Patent Registration No. 0879380 [Patent Document 11] Korean Patent Registration No. 2118319 [Patent Document 12] Korean Patent Registration No. 1718094 [Patent Document 13] Korean Patent Registration No. 1766204 Summary of the Invention [Problem to be solved by the invention]

[0008] The present invention provides a centered arc ion plating deposition apparatus that can manufacture deposition objects having high-quality coating layers by forming a uniform coating layer on the deposition object and controlling the movement of the material to be coated depending on the type of deposition object.

[0009] The present invention provides a centered arc ion plating deposition apparatus that can solve the problems of a deposition apparatus in which a plurality of process gases are supplied into a vacuum chamber through gas supply nozzles and then mixed inside the vacuum chamber, which makes it difficult to uniformly mix and distribute the process gases inside the vacuum chamber, making it difficult to freely control the deposition color and resulting in uneven deposition.

[0010] The present invention provides a centered arc ion plating deposition apparatus that can prevent a target member from being overheated, thereby solving the problem that when a target member of a deposition apparatus is overheated, the resistance of the target member increases and metal atoms are not released smoothly from the target member even when a voltage is supplied to generate an arc. [Means for solving the problem]

[0011] In one embodiment, a centered arc ion plating deposition apparatus includes: a vacuum chamber; cylindrical target members arranged vertically at a center of the vacuum chamber and configured to emit target material when supplied with a voltage; a gas injection means for injecting a process gas into the vacuum chamber from a process gas supply unit for supplying the process gas to generate plasma in the vacuum chamber; a mask device installed on the gas injection means for controlling diffusion of the target material and the process gas; and a cooling means disposed on the target member to prevent overheating, the cooling means including: a guide tube disposed hollow inside the target member; a support base disposed at one end of the target member and fastened to the guide tube; an inlet formed in the support base for injecting cooling water between the guide tube and the target member; and an outlet formed in the support base for discharging the injected cooling water after moving along the inside of the guide tube to the outside.

[0012] In another aspect, there is provided a centered arc ion plating deposition apparatus, wherein the mask device includes an expandable mask portion configured to be resizable.

[0013] In another aspect, there is provided a centered arc ion plating deposition apparatus, wherein the mask device further includes a rotation unit that connects the gas injection means and the expansion type mask unit to each other and rotates the expansion type mask unit by a predetermined angle.

[0014] In another aspect, the present invention provides a centered arc ion plating deposition apparatus including a gas discharge unit, wherein the gas injection means includes: a first discharge pipe having a plurality of first injection holes formed along a length thereof at one end thereof so as to receive the process gas from the gas supply means at one end thereof and inject it into the vacuum chamber; and a second discharge pipe having a plurality of second injection holes formed along a length thereof in a direction opposite to the first injection holes, the second discharge pipe receiving the first discharge pipe so as to form a spaced-apart space from the first discharge pipe at a predetermined distance so as to receive the process gas injected from the first injection holes and to discharge the received process gas into the vacuum chamber.

[0015] In another aspect, there is provided a centered arc ion plating deposition apparatus, wherein the expandable mask portion covers at least some of the first injection holes according to change in size.

[0016] In another aspect, a centered arc ion plating deposition apparatus may be provided, further including a cooling means having an inlet for supplying cooling water into the target member and an outlet for discharging the cooling water from the target member, the cooling means including a support for supporting a lower end of the target member so that the target member can be positioned vertically in a center of the vacuum chamber.

[0017] In another aspect, a centered arc ion plating deposition apparatus includes a vacuum chamber, a cylindrical target member, a trigger, a gas supply means, a gas injection means, a spot blocking unit, and a control unit. The vacuum chamber has an exhaust port for creating a vacuum inside. The target members are arranged vertically at the center of the vacuum chamber and emit target material when a voltage is applied. The trigger generates an arc spot on the target member. The gas supply means includes a plurality of gas supply units for respectively supplying process gases to generate plasma in the vacuum chamber and a gas mixer for mixing the process gases supplied from the gas supply units, and supplies the mixed process gases in the gas mixer to the vacuum chamber. The gas injection means receives the process gas from the gas supply means and injects it into the vacuum chamber. The spot blocking units are attached to the top and bottom of the target member, respectively, to limit the movement range of the arc spot. The control unit controls the voltage applied to the target member.

[0018] In another aspect, the gas injection means of the centered arc ion plating deposition apparatus preferably includes a gas outlet including: a first exhaust pipe having a plurality of first injection holes formed along a length thereof at one end thereof so as to receive a process gas from the gas supply means and inject it into the vacuum chamber; and a second exhaust pipe having a plurality of second injection holes formed along a length thereof in a direction opposite to the first injection holes, the second exhaust pipe receiving the first exhaust pipe so as to form a spaced-apart space from the first exhaust pipe at a predetermined distance so as to receive the process gas injected from the first injection holes and to discharge the received process gas into the vacuum chamber.

[0019] In another aspect, the gas injection means of the centered arc ion plating deposition apparatus is preferably provided in a plurality of positions along the circumference of the target member, and the gas supply means supplies the process gas from an upper portion to the first exhaust pipe of one of the gas injection means and from a lower portion to the first exhaust pipe of another adjacent gas injection means.

[0020] In another aspect, the second exhaust pipe of the centered arc ion plating deposition apparatus may have the second injection holes facing in the opposite direction to the exhaust port so that the process gas is exhausted in the opposite direction to the exhaust port.

[0021] In another aspect, a centered arc ion plating deposition apparatus includes a vacuum chamber, a hollow cylindrical target member, a cooling means, a trigger, a gas injection means, a spot blocking unit, and a control unit. The vacuum chamber is evacuated. The hollow cylindrical target member has a certain thickness and is disposed within the vacuum chamber. The hollow cylindrical target member has an open bottom for receiving a voltage and releasing a target material. The cooling means includes an inlet for supplying cooling water to the inside of the target member and an outlet for discharging the cooling water from the inside of the target member, and a support for supporting a lower end of the target member so that the target member can be positioned vertically in the center of the vacuum chamber. The trigger generates an arc spot on the target member. The gas injection means injects a process gas into the vacuum chamber to generate plasma within the vacuum chamber. The spot blocking units are respectively attached to the top and bottom of the target member and limit the movement range of the arc spot. The control unit controls the voltage supplied to the target member.

[0022] In another aspect, the cooling means of the centered arc ion plating deposition apparatus preferably further comprises a guide pipe having both open ends and vertically installed inside the target member such that the other end can surround the outlet to guide the cooling water flowing into the inlet in the target member so that the cooling water can flow into one end and be discharged through the other end to the outlet.

[0023] In another aspect, the support stage of the centered arc ion plating deposition apparatus preferably has the outlet formed at a radially central portion of the support stage, and the inlet formed at a predetermined distance from the outlet in the radial direction so that the cooling water can flow into the outer periphery of the target member and be discharged to the center. In this case, the guide pipe is formed so that the inlet is located outside the guide pipe, so that the cooling water flowing into the inlet flows along the outer periphery, enters the inner periphery, and is discharged through the outlet. [Effects of the Invention]

[0024] The embodiment can provide a centered arc ion plating deposition apparatus that can manufacture deposition objects having high-quality coating layers by forming a uniform coating layer on the deposition object and controlling the movement of the material to be coated depending on the type of deposition object.

[0025] In this embodiment, the process gas is mixed in the gas supply means and then injected into the vacuum chamber through the second injection holes formed along the length of the gas injection means. This allows the process gas to be uniformly mixed and distributed within the vacuum chamber, thereby facilitating color and thickness control of the deposited substrate.

[0026] In this embodiment, cooling water is supplied to and discharged from the inside of the target member via the support base. Therefore, even if the target member is heated, the cooling water cools the target member, preventing the target member from overheating. Therefore, the metal atom emission efficiency in the target member can be maintained. [Brief explanation of the drawings]

[0027] [Figure 1a] 1 is a schematic diagram illustrating a centered arc ion plating deposition apparatus according to an embodiment of the present invention. [Figure 1b] 1 is a schematic diagram illustrating a centered arc ion plating deposition apparatus according to an embodiment of the present invention. [Figure 2] 1 is a diagram showing a centered arc ion plating deposition apparatus according to an embodiment of the present invention, viewed from above, and schematically illustrating the interior thereof. [Figure 3] FIG. 2 is a diagram showing a schematic diagram of a gas injection means. [Figure 4] FIG. 3 is a diagram schematically illustrating an injection hole in a gas injection means. [Figure 5] FIG. 2 is an enlarged view of the target member and the cooling means. [Figure 6] FIG. 2 is a diagram schematically illustrating a jig device attached to an embodiment of the present invention. [Figure 7] 1 is a schematic view illustrating the inside of a centered arc ion plating deposition apparatus in which a jig device is installed according to an embodiment of the present invention; [Figure 8] FIG. 10 is a perspective view of an arc ion plating deposition apparatus according to another embodiment of the present invention. [Figure 9] 9 is a diagram showing the inside of the arc ion plating deposition apparatus of FIG. 8 in which a jig device is installed. [Figure 10] FIG. 9 is a plan view of the arc ion plating deposition apparatus of FIG. 8, showing the inside thereof. [Figure 11] 10 is a schematic diagram for explaining the operation of a mask device installed on a gas injection means. FIG. [Figure 12] 4A and 4B are diagrams illustrating a method for controlling an arc spot by a control unit and a power unit included in an arc ion plating deposition apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0028] Because the present invention can be modified in various ways and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. The advantages and features of the present invention, as well as methods for achieving them, will become clearer with reference to the following detailed embodiments, along with the drawings. However, the present invention is not limited to the embodiments disclosed below and can be embodied in various forms. In the following embodiments, terms such as "first" and "second" are used without any limiting meaning and to distinguish one element from another. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, terms such as "comprise" or "have" mean the presence of a feature or element described in the specification and do not preclude the possibility that one or more other features or elements may be added. Furthermore, the dimensions of elements in the drawings may be exaggerated or reduced for ease of explanation. For example, the size and thickness of each element shown in the drawings are arbitrarily illustrated for ease of explanation, and the present invention is not necessarily limited to those shown in the drawings.

[0029] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, the same or corresponding components will be given the same reference numerals, and redundant description thereof will be omitted.

[0030] 1a and 1b are diagrams illustrating a centered arc ion plating deposition apparatus according to an embodiment of the present invention, FIG. 2 is a diagram illustrating the interior of a centered arc ion plating deposition apparatus according to an embodiment of the present invention as viewed from above, FIG. 3 is a diagram illustrating a gas injection means, and FIG. 4 is a diagram illustrating an injection hole in the gas injection means.

[0031] 1a to 4, one embodiment of a centered arc ion plating deposition apparatus according to the present invention will be described.

[0032] The centered arc ion plating deposition apparatus 1 according to an embodiment of the present invention includes a vacuum chamber 10, a cylindrical target member 15, a trigger 20, a gas supply means 25, a gas injection means 30, a spot blocking unit 35, an ion source 16, and a control unit (not shown).

[0033] The centered arc ion plating deposition apparatus 1 according to an embodiment of the present invention may be configured as a two-door type. The vacuum chamber 10 is configured of a first door chamber 10a and a second door chamber 10b, and one of the first door chamber 10a and the second door chamber 10b is connected to a main chamber 10c to perform a deposition process.

[0034] Each of the first and second door chambers 10a, 10b may be provided with a cylindrical target member 15, a trigger 20, a gas supply means 25, a gas injection means 30, a spot blocking unit 35, at least one ion source 16, and a control unit.

[0035] In the vacuum chamber 10, the pressure in the internal space is maintained at a vacuum state by a vacuum pump.

[0036] An exhaust port 11 is formed in the vacuum chamber 10, and when the vacuum pump operates, the air inside the vacuum chamber 10 is exhausted through the exhaust port 11 by the vacuum pump, thereby maintaining a vacuum.

[0037] The exhaust port 11 may be located on one side of the vacuum chamber 10. The exhaust port 11 may be installed in the main chamber 10c.

[0038] In various embodiments, the exhaust port 11 may be located on the rear side within the main chamber 10c.

[0039] When either one of the first and second door chambers 10a and 10b and the main chamber 10c are fastened together, the internal vacuum pressure of the vacuum chamber 10 is approximately 1.0 to 5.0×10-5 Torr, but is not limited thereto.

[0040] The target members 15 act as a source of the coating to be deposited on the surface of the target. They are typically made of titanium group elements such as titanium (Ti) or zirconium (Zr), and are mounted in the center of the vacuum chamber 10, from top to bottom. Voltage is applied to the target members 15 from the top and bottom. When an arc spot is generated by the voltage, surface particles are vaporized or ionized. The evaporated metal ions then move due to an electric field or diffusion. When process gas is introduced into the vacuum chamber 10, the evaporated metal ions combine with the process gas and are deposited on the target.

[0041] The trigger 20 generates an arc on the target member 15. When the arc is generated, it moves back and forth up and down along the surface of the target member 15.

[0042] The gas supply means 25 serves to supply process gas for generating plasma within the vacuum chamber 10. To this end, the gas supply means 25 includes a plurality of gas supply units 26 and a gas mixing unit 28. A plurality of gas supply units 26 are provided for each gas to be injected, and supply the gases respectively. The process gases to be supplied include argon (Ar), nitrogen (N2), acetylene (C2H2), oxygen (O2), etc., and can be selectively injected depending on the color of the coating.

[0043] The gas mixer 28 mixes the process gases supplied from the gas supply units 26. If the process gases were directly supplied from the gas supply units 26 into the vacuum chamber 10, the process gases would not be mixed uniformly within the vacuum chamber 10, resulting in poor coating performance. Therefore, the gas mixer 28 mixes the process gases supplied from the gas supply units 26 and supplies the mixed gas to the vacuum chamber 10.

[0044] The gas injection means 30 receives the process gas from the gas supply means 25 and injects it into the vacuum chamber 10. To this end, the gas injection means 30 includes a first exhaust pipe 31 and a second exhaust pipe 33 for further mixing and injecting the process gas.

[0045] The first exhaust pipe 31 receives process gas from the gas supply means 25 at its end and is vertically disposed within the vacuum chamber 10, spaced apart from the target member 15 in the radial direction. The first exhaust pipe 31 has a plurality of first injection holes 31a formed along its length to inject the process gas toward the vacuum chamber 10. The second exhaust pipe 33 surrounds the first exhaust pipe 31, forming a receiving portion 34 spaced apart from the first exhaust pipe 31. The process gas injected from the first injection holes 31a is received in the receiving portion 34 within the second exhaust pipe 33. The second exhaust pipe 33 has a plurality of second injection holes 33a spaced apart along its length to inject the process gas injected from the first injection holes 31a and received in the receiving portion 34 into the vacuum chamber 10. The gas injection means 30 may have the first and second injection holes 31a and 33a formed in opposite directions to further mix the process gases supplied from the gas supply means 25. That is, if the first and second injection holes 31a and 33a are formed in the same direction, the process gas injected from the first injection hole 31a is immediately discharged through the second injection hole 33a, making it difficult for the process gases to mix. Therefore, the second injection hole 33a is formed in the opposite direction to the first injection hole 31a to further mix the process gases inside the second exhaust pipe 33. Therefore, when the process gas is injected from the first injection hole 31a, it is received in the receiving portion 34 inside the first exhaust pipe 31 and moves along the receiving portion 34, where it is further mixed before being discharged into the vacuum chamber 10 through the second injection hole 33a formed in the opposite direction to the first injection hole 31a. A plurality of second injection holes 33a are formed along the length of the second exhaust pipe 33. Therefore, the second injection holes 33a are formed vertically at regular intervals inside the vacuum chamber 10 to inject the process gas, so that the process gas can be uniformly distributed inside the vacuum chamber 10.

[0046] At this time, a plurality of gas injection means 30 are formed. In this embodiment, two gas injection means 30 are formed at 180-degree intervals. Therefore, in order to more uniformly mix the process gas supplied into the vacuum chamber 10, the process gas is supplied from the gas supply means 25 to the upper part of the first exhaust pipe 31 in the case of the first gas injection means 30, and the process gas is supplied to the lower part of the first exhaust pipe 31 in the case of the second gas injection means 30.

[0047] Meanwhile, the vacuum chamber 10 is maintained at a vacuum state by a vacuum pump. Therefore, the air inside is continuously discharged through the exhaust port 11. At this time, since the process gas is injected in the direction of the exhaust port 11 and can be easily discharged to the outside by the vacuum pump, the gas injection means 30 is formed with second injection holes 33a so that the discharged process gas is directed toward the target member 15 in the opposite direction from the exhaust port 11. Therefore, in this embodiment, the second injection holes 33a are formed so that the process gas is injected at a 45-degree angle toward the target member 15 in the opposite direction from the exhaust port 11, as shown in FIG. 2.

[0048] The spot blocking units 35 are attached to the top and bottom of the target member 15 to limit the movement range of the arc spot. The spot blocking units 35 are equipped with permanent magnets to form a magnetic field, thereby preventing the arc spot from moving further along the target member 15.

[0049] The control unit controls the voltage supplied to the target member 15. Different voltages are supplied to the target member 15 so that a potential difference is created between the upper and lower ends. Here, the control unit controls the voltage so that it alternately increases at the upper and lower ends at regular time intervals. Therefore, the direction of the arc spot can be reversed, such as moving upward while moving downward at regular time intervals.

[0050] In this embodiment, the process gas is mixed in the gas supply means 25 and supplied to the vacuum chamber 10, and then mixed again in the gas injection means 30 before being injected from inside the vacuum chamber 10, thereby ensuring uniform mixing of the process gas. In addition, the second exhaust pipe 33 of the gas injection means 30 has a plurality of second injection holes 33a formed at regular intervals along its length, allowing the process gas to be injected so as to be uniformly distributed inside the vacuum chamber 10. Furthermore, the process gas is injected in the opposite direction to the exhaust port 11 of the vacuum chamber 10, thereby reducing loss of the process gas.

[0051] FIG. 5 is an enlarged view of the target member and the cooling means.

[0052] 1b and 5, if a voltage is supplied to the target member 15 and an arc spot continues to occur, the target member 15 will overheat and its resistance will increase. To prevent this, the target member 15 of this embodiment has a certain thickness, is hollow, and has an open bottom so that cooling water 54 can be stored inside.

[0053] The cooling means 50 serves to supply and discharge cooling water 54 into and from the target member 15 to prevent the target member 15 from overheating. To this end, the cooling means 50 includes a support 51 and a guide tube 53. The support 51 is attached to a lower portion of the center of the vacuum chamber 10 and supports the lower end of the target member 15 so that the target member 15 is arranged vertically in the center of the vacuum chamber 10. The support 15 is formed with an inlet 51a for supplying cooling water 54 to the target member 15 and an outlet 51b for discharging the cooling water 54 contained in the target member 15. The outlet 51b is formed in the center so that the cooling water 54 is supplied to the inner circumferential surface of the target member 15 and discharged from the center, and the inlet 51a is formed at a predetermined distance in the radial direction from the outlet 51b. This is because the cooling water 54 flowing in from the inlet 51 a comes into contact with the target member 15 to cool the target member 15 , and the heated cooling water 54 is discharged from the center of the target member 15 .

[0054] The guide tube 53 serves to guide the cooling water 54 to flow along the inner circumferential surface of the target member 15 and reach the center thereof. To this end, the guide tube 53 is open at both ends and installed within the target member 15. The guide tube 53 is arranged so that the cooling water 54 that flows into the target member 15 through the inlet 51a flows axially along the inner circumferential surface of the target member 15, enters one end of the guide tube 53, and then exits through the other end to the outlet 51b. Therefore, the guide tube 53 is installed vertically so that the other end surrounds the outlet 51b, and the inlet 51a is located outside the guide tube 53.

[0055] More specifically, the principle by which the target member 15 is cooled by the cooling water 54 is that when the cooling water 54 is injected through the inlet 51a provided in the support table 51, the cooling water 54 moves between the guide tube 53 and the inner surface of the target member 15, absorbing heat from the overheated target member 15. After that, having absorbed the heat from the target member 15, the cooling water 54 moves along the inner surface of the guide tube 53 to the outlet 51b provided in the support table 51, and is then discharged to the outside.

[0056] FIG. 6 is a diagram schematically illustrating a jig device attached to an embodiment of the present invention.

[0057] In FIG. 6, (a) is a plan view of the jig device, and (b) is a front view of the jig device and an enlarged view of the deposition target and jig arm, which are parts of the jig device.

[0058] FIG. 7 is a schematic view showing the inside of a centered arc ion plating deposition apparatus in which a jig device is installed according to an embodiment of the present invention.

[0059] 1a, 6, and 7, a jig device 80 is installed in the first door chamber 10a and the second door chamber 10b. The jig device 80 is installed on a rotation device 38 provided in each of the first door chamber 10a and the second door chamber 10b and rotates while rotating on its axis. A plurality of jig devices 80 are installed in the first door chamber 10a and the second door chamber 10b and can revolve around the target member 15 by a revolution device 39 provided in each of the first door chamber 10a and the second door chamber 10b. The jig device 80 rotates around a jig rod 81 (described later) as one axis by the rotation device 38 and revolves around the revolution device 39, thereby forming a coating layer on the surfaces of a plurality of deposition targets 90 mounted on the jig device 80. In addition, when one of the first door chamber 10a and the second door chamber 10b is connected to the main chamber 10c and the deposition process is in progress, the jig device 80 can be separated in the other door chamber where the deposition process has been completed, and the deposition object 90 placed on the jig device 80 can be separated from the jig device 80 to obtain the coated deposition object 90.

[0060] The jig device 80 is made up of a jig rod 81, a jig plate 82, and a jig arm 83. A lower portion of the jig rod 81 may be formed in a structure that can be fastened onto the rotation device 38.

[0061] A jig plate 82 is installed on the jig rod 81. A plurality of jig plates 82 are installed spaced apart from each other on the jig rod 81. Therefore, a plurality of jig plates 82 may be installed on the jig rod 81 in a multi-layer structure.

[0062] A plurality of jig arms 83 are formed on the jig plate 82. Each of the plurality of jig arms 83 may be extended from the jig plate 82 and inclined at a predetermined angle. A deposition target 90 may be placed on each of the jig arms 83. Because the jig arms 83 are inclined at a predetermined angle, the deposition target 90 placed on the jig arms 83 is also inclined at a predetermined angle. However, the jig arms 83 of the jig device 80 are not limited to those described above or illustrated in the drawings, and may have various shapes, which vary depending on the type of deposition target 90 and the components of the coating layer.

[0063] FIG. 8 is a perspective view of an arc ion plating deposition apparatus according to another embodiment of the present invention, FIG. 9 is a diagram showing a schematic view of the interior of the arc ion plating deposition apparatus of FIG. 8 in which a jig device is installed, FIG. 10 is a plan view of the arc ion plating deposition apparatus of FIG. 8 in which the interior is shown, and FIG. 11 is a schematic view for explaining the operation of a mask device installed in a gas injection means.

[0064] 8 to 11, a mask device 70 may be installed in the gas injection means 30 of the arc ion plating deposition apparatus 1 according to another embodiment of the present invention.

[0065] A mask device 70 may be provided for each of the two gas injection means 30 positioned 180 degrees apart on either side of the cylindrical target member 15. The two mask devices 70 may be positioned opposite each other.

[0066] The mask device 70 may be located in the upper region of the gas injection means 30 .

[0067] The mask device 70 may include a rotating portion 71 and an expanding mask portion 72 .

[0068] The rotating unit 71 may be installed on the gas injection means 30. The rotating unit 71 may be installed along the periphery of one region of the gas injection means 30. The expanding mask unit 72 may be installed on the rotating unit 71. The control unit controls the rotating unit 71 to rotate the expanding mask unit 72 at a predetermined rotation angle around the gas injection means 30. The control unit controls the rotating unit 71 to control the position of the expanding mask unit 72, thereby adjusting the amount and direction of gas injected from the gas injection means 30 and controlling the movement of evaporated metal ions, etc., due to an electric field, diffusion, etc., when surface particles of the cylindrical target member 15 are vaporized or ionized, thereby further improving the uniformity of the coating layer on the surface of the deposition target object 90.

[0069] The expansion type mask section 72 may be configured as a plate type. The expansion type mask section 72 is configured to include a main mask 72a and first and second auxiliary masks 72b and 72c. The first auxiliary mask 72b can be stored inside the main mask 72a, and the second auxiliary mask 72c can be stored inside the first auxiliary mask 72b, so that the masks can be stored inside the main mask 72a.

[0070] The first auxiliary mask 72b can be pulled out from the main mask 72a in a downward direction from the main mask 72a, and the second auxiliary mask 72c can be pulled out from the first auxiliary mask 72b in a downward direction from the first auxiliary mask 72b.

[0071] The control unit controls the extension or retraction of the first and second auxiliary masks 72b, 72c, thereby adjusting the overall size of the expanded mask unit 72. More specifically, the control unit adjusts the vertical length of the expanded mask unit 72.

[0072] In various embodiments, at least some of the second injection holes 33a provided in the gas injection means 30 may be hidden depending on the size of the expansion type mask portion 72.

[0073] In various embodiments, regardless of whether the size of the expandable mask portion 72 is changed, all of the second injection holes 33a may be opened depending on the rotation angle of the expandable mask portion 72 on the rotation portion 71.

[0074] In addition, the gas output from at least some of the multiple second injection holes 33a is injected into the expansion type mask portion 72, and the gas can be reflected by the expansion type mask portion 72 and diffused in other directions depending on the rotation angle of the expansion type mask portion 72 on the rotating portion 71.

[0075] The control unit adjusts the size of the expandable mask unit 72 and the position of the expandable mask unit 72 using the rotation unit 71, thereby physically controlling the direction of diffusion and the amount of movement in a specific direction of ions diffusing into the deposition target 90 and gas injected from the gas injection means 30. Therefore, it is possible to flexibly respond to the number, type, and coating layer components of the deposition targets 90 mounted on the jig device 80 and apply a uniform, high-quality coating layer to the deposition targets 90.

[0076] FIG. 12 is a diagram illustrating a method for controlling an arc spot by a control unit and a power unit included in the arc ion plating deposition apparatus according to the embodiment of the present invention.

[0077] 12, in some embodiments, the control unit 200 and the power unit 300 may be physically separated from each other. The control unit 200 is connected to the power unit 300 via a control line, allowing for intercommunication. In various embodiments, the control unit 200 may exchange communication data with an external computing device. The control unit 200 may generate an arc discharge in the cylindrical target member 15 by being triggered by a high voltage or a trigger 20.

[0078] In addition, the power unit 300 applies voltage to each electrode at one end and the other end of the cylindrical target member 15, and by controlling the time of the voltage applied to each electrode, it is possible to adjust the arc time and control the speed and power of the arc spot.

[0079] As described above, embodiments of the present invention may be embodied in the form of program instructions executable by various computer components and recorded on a computer-readable recording medium. The computer-readable recording medium may include program instructions, data files, data structures, and the like, alone or in combination. The program instructions recorded on the computer-readable recording medium may be specially designed and constructed for the present invention, or may be known and available to those skilled in the art of computer software. Examples of computer-readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specially configured to store and execute program instructions, such as ROM, RAM, and flash memory. Examples of program instructions include not only machine language code, such as that produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter, etc. A hardware device may be replaced by one or more software modules to perform processes according to the present invention, and vice versa.

[0080] The specific implementation described in the present invention is one embodiment and does not limit the scope of the present invention in any way. For the sake of brevity, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of the system may be omitted. Furthermore, wire connections or connecting members between components shown in the drawings are illustrative of functional connections and / or physical or circuit connections, and may be replaced or represented as various additional functional connections, physical connections, or circuit connections in an actual device. Furthermore, unless specifically referred to as "essential" or "important," a component may not necessarily be required for application of the present invention.

[0081] Furthermore, although the above detailed description of the present invention has been described with reference to preferred embodiments of the present invention, it will be understood that those skilled in the art or those with ordinary knowledge in the art can make various modifications and changes to the present invention without departing from the spirit and technical scope of the present invention as set forth in the claims below. Therefore, the technical scope of the present invention should not be limited to the content of the detailed description of the specification, but should be defined by the claims.

Claims

1. a vacuum chamber; cylindrical target members arranged vertically in the center of the vacuum chamber and adapted to emit target material upon receiving a voltage; a gas injection unit for injecting a process gas supplied from a process gas supply unit into the vacuum chamber to generate plasma in the vacuum chamber; a mask device disposed on the gas injection means for controlling diffusion of the target material and the process gas; cooling means disposed on the target member to prevent overheating of the target member; The cooling means includes a guide tube disposed in a hollow space formed inside the target member; a support disposed at one end of the target member and fastened to the guide tube; an injection port formed in the support base so that cooling water can be injected between the guide pipe and the target member; a discharge port formed in the support base for discharging the injected cooling water to the outside after moving along the inside of the guide pipe, The gas injection means a gas exhaust unit including: a first exhaust pipe disposed above and below the vacuum chamber and having a plurality of first injection holes formed along its length so as to receive a process gas from a gas supply means at one end and inject the process gas into the vacuum chamber and be spaced apart from the target member at regular intervals in a radial direction; and a second exhaust pipe receiving the first exhaust pipe so as to form a spaced-apart space from the first exhaust pipe at a regular interval so as to receive the process gas injected from the first injection holes, and having a plurality of second injection holes formed along its length in a direction opposite to the first injection holes so as to discharge the received process gas into the vacuum chamber; The mask device is a rotating part disposed around the second exhaust pipe of the gas injection means; an expandable mask portion coupled to the rotating portion and resizable along the length of the second exhaust pipe of the gas injection means; The expanded mask portion rotates around the second exhaust pipe of the gas injection means at a predetermined angle.

2. the expansion type mask portion covers at least a part of the plurality of second injection holes by changing the size; 2. The centered arc ion plating deposition apparatus according to claim 1.

3. The guide tube has open ends and one end is connected to the outlet of the support.

3. The centered arc ion plating deposition apparatus according to claim 2.

4. The process gas discharged from the first injection hole of the first discharge pipe is mixed between the first discharge pipe and the second discharge pipe, and then discharged into the vacuum chamber through the second injection hole of the second discharge pipe.

4. The centered arc ion plating deposition apparatus according to claim 3.

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