SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To sufficiently remove relatively small objects to be removed on a substrate.SOLUTION: A substrate processing device (100) comprises: a substrate holding and rotating mechanism (120) that holds a substrate (W) horizontally and rotates the substrate (W); a magnetic fluid supply part (130) that supplies magnetic fluid to the substrate (W) held by the substrate holding and rotating mechanism (120); a magnetic force application part (150) that applies a magnetic force to the magnetic fluid supplied to the substrate (W); a rinse liquid supply part (140) that supplies rinse liquid to the substrate (W) to remove the magnetic fluid supplied to the substrate (W); and a control part (112) that controls the substrate holding and rotating mechanism (120), the magnetic fluid supply part (130), the magnetic force application part (150) and the rinse liquid supply part (140).SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] 2. Description of the Related Art Substrate processing apparatuses are known that process substrates. Substrate processing apparatuses are suitable for processing semiconductor substrates. Typically, substrate processing apparatuses process substrates using chemical processing liquids or the like.

[0003] When processing a substrate, if particles remain on the substrate, the characteristics of the substrate may be affected. For this reason, the use of a mixed fluid to remove particles on the substrate has been studied (see Patent Document 1). In the substrate processing method of Patent Document 1, a two-fluid nozzle mixes pressurized gas and a chemical liquid to form a mist, which is then ejected onto the substrate, thereby removing particles from the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-59876 Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, the microfabrication of substrates has become more advanced, and particle sizes are becoming smaller. However, the substrate processing method of Patent Document 1 may not be able to sufficiently remove small particles if the particles to be removed are small.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can sufficiently remove relatively small objects to be removed from a substrate. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding and rotating mechanism that holds a substrate in a horizontal direction and rotates the substrate, a magnetic fluid supply unit that supplies a magnetic fluid to the substrate held by the substrate holding and rotating mechanism, a magnetic force application unit that applies a magnetic force to the magnetic fluid supplied to the substrate, a rinse liquid supply unit that removes the magnetic fluid from the substrate by supplying a rinse liquid to the substrate, and a control unit that controls the substrate holding and rotating mechanism, the magnetic fluid supply unit, the magnetic force application unit, and the rinse liquid supply unit.

[0008] In one embodiment, the magnetic fluid supply unit supplies a magnetic ionic liquid as the magnetic fluid.

[0009] In one embodiment, the magnetic force application unit includes a magnetic force generator that generates a magnetic force and a movement mechanism that moves the magnetic force generator, and the control unit controls the magnetic fluid supply unit and the movement mechanism so that the magnetic force generator approaches the substrate while the magnetic fluid supply unit supplies the magnetic fluid to the substrate.

[0010] In one embodiment, the control unit controls the movement mechanism so that the magnetic force generator is positioned at a distance of 0.1 mm to 10 mm from the substrate.

[0011] In one embodiment, the substrate processing apparatus further includes a mixed fluid supply unit that supplies a mixed fluid of a liquid and a gas to the substrate.

[0012] In one embodiment, the control unit controls the fluid mixture supply unit so that the fluid mixture supply unit supplies the fluid mixture to the substrate before the magnetic fluid supply unit supplies the magnetic fluid to the substrate.

[0013] According to another aspect of the present invention, a substrate processing method includes a substrate holding step of holding a substrate in a horizontal direction, a substrate rotation step of rotating the substrate held in the substrate holding step, a magnetic fluid supply step of supplying a magnetic fluid to the substrate rotating in the substrate rotation step, a magnetic force application step of applying a magnetic force to the magnetic fluid supplied to the substrate in the magnetic fluid supply step, and a rinse liquid supply step of removing the magnetic fluid from the substrate by supplying a rinse liquid to the substrate.

[0014] In one embodiment, the magnetic fluid supplying step includes a step of supplying a magnetic ionic liquid as the magnetic fluid.

[0015] In one embodiment, the magnetic force application process includes a moving process in which a magnetic force generator is moved closer to the substrate while the magnetic fluid is being supplied to the substrate in the magnetic fluid supply process, and a magnetic force generation process in which the magnetic force generator generates a magnetic force after the substrate has been moved in the moving process.

[0016] In one embodiment, in the moving step, the magnetic force generator is moved a distance of 0.1 mm to 10 mm relative to the substrate.

[0017] In one embodiment, the substrate processing method further includes a mixed fluid supplying step of supplying a mixed fluid of a liquid and a gas onto the substrate.

[0018] In one embodiment, the mixed fluid supplying step supplies the mixed fluid to the substrate before the magnetic fluid is supplied to the substrate in the magnetic fluid supplying step. [Effects of the Invention]

[0019] According to the present invention, relatively small objects to be removed on a substrate can be sufficiently removed. [Brief explanation of the drawings]

[0020] [Figure 1] 1 is a schematic diagram of a substrate processing system including a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 3] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. [Figure 5] 1(a) to 1(d) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 6] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 7] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 8] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 9] FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. [Figure 10] 1(a) to 1(e) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 11] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 12] FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0021] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. Typically, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0022] First, a substrate processing system 10 including a substrate processing apparatus 100 according to the present embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic plan view of the substrate processing system 10.

[0023] 1, the substrate processing system 10 includes a plurality of substrate processing apparatuses 100. The substrate processing apparatuses 100 process substrates W. The substrate processing apparatuses 100 process the substrates W by performing at least one of etching, surface processing, property imparting, processing film formation, removal of at least a portion of a film, and cleaning on the substrates W.

[0024] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0025] 1, the substrate processing system 10 includes, in addition to multiple substrate processing apparatuses 100, a fluid cabinet 10A, a fluid box 10B, multiple load ports LP, an indexer robot IR, a center robot CR, and a controller 20. The controller 20 controls the load ports LP, the indexer robot IR, the center robot CR, and the substrate processing apparatuses 100.

[0026] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports substrates W between the load port LP and the center robot CR. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the substrate W may be transferred indirectly between the indexer robot IR and the center robot CR via the placement stage. The center robot CR transports substrates W between the indexer robot IR and the substrate processing apparatus 100. Each of the substrate processing apparatuses 100 processes the substrates W by discharging a liquid onto the substrate W. The liquid includes a magnetic fluid and a rinse liquid. Alternatively, the liquid may include other liquids. The fluid cabinet 10A contains a liquid. Note that the fluid cabinet 10A may contain a gas.

[0027] The substrate processing apparatuses 100 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing apparatuses 100 stacked vertically (three substrate processing apparatuses 100 in FIG. 1). Each fluid box 10B corresponds to a plurality of towers TW. Liquid in the fluid cabinet 10A is supplied to all of the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B. Gas in the fluid cabinet 10A is supplied to all of the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B.

[0028] The control device 20 controls various operations of the substrate processing system 10. The control device 20 includes a control unit 22 and a storage unit 24. The control unit 22 has a processor. The control unit 22 has, for example, a central processing unit (CPU). Alternatively, the control unit 22 may have a general-purpose computer.

[0029] The storage unit 24 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 24 may include removable media. The control unit 22 executes computer programs stored in the storage unit 24 to perform substrate processing operations.

[0030] The storage unit 24 also stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0031] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100.

[0032] The substrate processing apparatus 100 includes a chamber 110, a substrate holding and rotating mechanism 120, a magnetic fluid supply unit 130, a rinse liquid supply unit 140, and a magnetic force application unit 150. The chamber 110 accommodates a substrate W. The chamber 110 also accommodates the substrate holding and rotating mechanism 120 and at least a portion of the magnetic fluid supply unit 130, the rinse liquid supply unit 140, and the magnetic force application unit 150.

[0033] The chamber 110 has a generally box-like shape with an internal space. The chamber 110 accommodates the substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and the chamber 110 accommodates the substrates W one by one. The substrates W are accommodated in the chamber 110 and are processed in the chamber 110.

[0034] The substrate holding and rotation mechanism 120 holds the substrate W. The substrate holding and rotation mechanism 120 holds the substrate W horizontally so that the top surface (front surface) Wa of the substrate W faces upward and the back surface (bottom surface) Wb of the substrate W faces vertically downward. The substrate holding and rotation mechanism 120 also rotates the substrate W while holding it. The top surface Wa of the substrate W may be flattened. Alternatively, the top surface Wa of the substrate W may be provided with lines and spaces, or may have a pillar-shaped stacked structure with recesses. The substrate holding and rotation mechanism 120 rotates the substrate W while holding it.

[0035] For example, the substrate holding and rotating mechanism 120 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding and rotating mechanism 120 may have any mechanism that holds the substrate W from its back surface Wb. For example, the substrate holding and rotating mechanism 120 may be a vacuum type. In this case, the substrate holding and rotating mechanism 120 holds the substrate W horizontally by adsorbing the central portion of the back surface Wb of the substrate W, which is the surface on which no devices are formed, to its upper surface. Alternatively, the substrate holding and rotating mechanism 120 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0036] For example, the substrate holding and rotating mechanism 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with a plurality of chuck members 122.

[0037] The shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis Ax. The spin base 121 is coupled to the upper end of the shaft 123. The substrate W is placed above the spin base 121.

[0038] The spin base 121 is disk-shaped. The chuck member 122 supports the substrate W horizontally. The shaft 123 extends downward from the center of the spin base 121. The electric motor 124 applies a rotational force to the shaft 123. The electric motor 124 rotates the shaft 123 in a rotational direction, thereby rotating the substrate W and the spin base 121 around the rotation axis Ax. The housing 125 surrounds the shaft 123 and the electric motor 124.

[0039] The magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W. Typically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the upper surface Wa of the substrate W held by the substrate holding and rotating mechanism 120.

[0040] A magnetic fluid has magnetic properties and acts when a magnetic force is applied to it.

[0041] The magnetic fluid is preferably a magnetic ionic liquid, which allows the substrate to be treated at room temperature.

[0042] Typically, the magnetic ionic liquid is a ferromagnetic material, for example, a soft magnetic material.

[0043] A typical example of a magnetic fluid is 1-alkyl-3-methylimidazolium-X (X = FeCl4, FeBr4, Fe2Cl7, Fe2Br7). For example, a magnetic fluid is composed of 1-alkyl-3-methylimidazolium, a typical cation constituting an ionic liquid, and ferric chloride, a typical magnetic anion.

[0044] For example, 1-butyl-3-methylimidazolium tetrachloroferrate (bmim[FeCl4]) or 1-ethyl-3-methylimidazolium tetrachloroferrate (emim[FeCl4]) may be used as the magnetic fluid.

[0045] The magnetic fluid supply unit 130 includes a pipe 132, a valve 134, a nozzle 136, and a movement mechanism 138. The pipe 132 is supplied with magnetic fluid from a supply source. The valve 134 opens and closes a flow path in the pipe 132. The nozzle 136 is connected to the pipe 132. The nozzle 136 ejects the magnetic fluid onto the upper surface Wa of the substrate W. The nozzle 136 is preferably configured to be movable relative to the substrate W.

[0046] The movement mechanism 138 moves the nozzle 136 in the horizontal and vertical directions. Specifically, the movement mechanism 138 moves the nozzle 136 in the circumferential direction around a rotation axis that extends in the vertical direction. The movement mechanism 138 also raises and lowers the nozzle 136 in the vertical direction.

[0047] The movement mechanism 138 has an arm 138a, a shaft 138b, and a drive unit 138c. The arm 138a extends horizontally. The nozzle 136 is disposed at the tip of the arm 138a. The nozzle 136 is disposed at the tip of the arm 138a in a position that allows the nozzle 136 to supply magnetic fluid toward the upper surface Wa of the substrate W held by the chuck member 122. More specifically, the nozzle 136 is coupled to the tip of the arm 138a and protrudes downward from the arm 138a. The base end of the arm 138a is coupled to the shaft 138b. The shaft 138b extends vertically.

[0048] The drive unit 138c has a rotation drive mechanism and an elevation drive mechanism. The rotation drive mechanism of the drive unit 138c rotates the shaft 138b around the rotation axis, causing the arm 138a to pivot along a horizontal plane around the shaft 138b. As a result, the nozzle 136 moves along the horizontal plane. More specifically, the nozzle 136 moves in the circumferential direction around the shaft 138b. The rotation drive mechanism of the drive unit 138c includes, for example, a motor that can rotate forward and backward.

[0049] The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b in the vertical direction. The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b, thereby raising and lowering the nozzle 136 in the vertical direction. The lifting drive mechanism of the drive unit 138c has a drive source such as a motor and a lifting mechanism, and the drive source drives the lifting mechanism to raise or lower the shaft 138b. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

[0050] Typically, while the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W, the substrate holding and rotation mechanism 120 rotates the substrate W while holding it. Therefore, the magnetic fluid supplied to the substrate W from the magnetic fluid supply unit 130 flows radially outward on the substrate W.

[0051] The speed at which the magnetic fluid flows radially outward on the substrate W can be controlled by the substrate holding and rotation mechanism 120. By increasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the magnetic fluid flows radially outward on the substrate W can be increased. Furthermore, by decreasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the magnetic fluid flows radially outward on the substrate W can be decreased.

[0052] The rinse liquid supply unit 140 supplies a rinse liquid to the substrate W. By supplying the rinse liquid to the substrate W, the substrate W is rinsed. The rinse liquid is, for example, pure water (deionized water). Note that the rinse liquid is not limited to pure water, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, IPA (isopropyl alcohol), and hydrochloric acid water with a diluted concentration (for example, about 10 to 100 ppm).

[0053] The rinse liquid supply unit 140 includes a pipe 142, a valve 144, a nozzle 146, and a movement mechanism 148. The pipe 142 is supplied with rinse liquid from a supply source. The valve 144 opens and closes a flow path in the pipe 142. The nozzle 146 is connected to the pipe 142. The nozzle 146 ejects the rinse liquid onto the upper surface Wa of the substrate W. The nozzle 146 is preferably configured to be movable relative to the substrate W.

[0054] Typically, while the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W, the substrate holding and rotation mechanism 120 rotates while holding the substrate W. Due to the rotation of the substrate W, the rinse liquid supplied to the substrate W from the rinse liquid supply unit 140 flows radially outward on the substrate W.

[0055] The speed at which the rinse liquid flows radially outward on the substrate W can be controlled by the substrate holding and rotation mechanism 120. By increasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the rinse liquid flows radially outward on the substrate W can be increased. Furthermore, by decreasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the rinse liquid flows radially outward on the substrate W can be decreased.

[0056] Movement mechanism 148 has arm 148a, shaft 148b, and drive unit 148c. Arm 148a, shaft 148b, and drive unit 148c of movement mechanism 148 have the same configuration as arm 138a, shaft 138b, and drive unit 138c of movement mechanism 138. Therefore, detailed description of arm 148a, shaft 148b, and drive unit 148c will be omitted.

[0057] The magnetic force application unit 150 applies a magnetic force to the substrate W. Typically, when the magnetic fluid supplied from the magnetic fluid supply unit 130 is on the substrate W, the magnetic force application unit 150 applies a magnetic force to the substrate W. When the magnetic force application unit 150 applies a magnetic force to the substrate W, the objects to be removed on the substrate W are suspended in the magnetic fluid.

[0058] The magnetic force applying unit 150 may include a permanent magnet. The permanent magnet may be a neodymium magnet.

[0059] Alternatively, the magnetic force application unit 150 may include an electromagnet. When the magnetic force application unit 150 includes an electromagnet, the electromagnet is formed by winding a coil around a core made of a ferromagnetic material. Typically, the coil is made of copper wire. The magnetic force applied by the magnetic force application unit 150 can be adjusted by adjusting the current flowing through the coil.

[0060] The magnetic force application unit 150 may be movable relative to the substrate W. For example, the magnetic force application unit 150 is preferably movable in the horizontal and / or vertical directions according to a movement mechanism controlled by the control unit 22.

[0061] The substrate processing apparatus 100 further includes a cup 180. The cup 180 collects liquid splashed from the substrate W. The cup 180 moves up and down. For example, the cup 180 moves up vertically to the side of the substrate W during the period in which the magnetic fluid supply unit 130 supplies liquid to the substrate W. In this case, the cup 180 collects liquid splashed from the substrate W due to the rotation of the substrate W. Furthermore, when the period in which the magnetic fluid supply unit 130 supplies liquid to the substrate W ends, the cup 180 moves down vertically from the side of the substrate W.

[0062] As described above, the control device 20 includes the control unit 22 and the memory unit 24. The control unit 22 controls the substrate holding and rotating mechanism 120, the magnetic fluid supply unit 130, the rinse liquid supply unit 140, the magnetic force application unit 150, and / or the cup 180. In one example, the control unit 22 controls the electric motor 124, the valves 134, 144, the moving mechanisms 138, 148, the magnetic force application unit 150, and / or the cup 180.

[0063] The substrate processing apparatus 100 of this embodiment is suitable for use in the manufacture of semiconductor devices having semiconductors. Typically, in semiconductor devices, conductive layers and insulating layers are stacked on a substrate. The substrate processing apparatus 100 is suitable for use in cleaning and / or processing (e.g., etching, changing characteristics, etc.) the conductive layers and / or insulating layers during the manufacture of semiconductor devices.

[0064] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

[0065] 3 , the control device 20 controls various operations of the substrate processing apparatus 100. The control device 20 controls the indexer robot IR, the center robot CR, the substrate holding and rotation mechanism 120, the magnetic fluid supply unit 130, the rinse liquid supply unit 140, the magnetic force application unit 150, and the cup 180. Specifically, the control device 20 controls the indexer robot IR, the center robot CR, the substrate holding and rotation mechanism 120, the magnetic fluid supply unit 130, the rinse liquid supply unit 140, the magnetic force application unit 150, and the cup 180 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holding and rotation mechanism 120, the magnetic fluid supply unit 130, the rinse liquid supply unit 140, the magnetic force application unit 150, and the cup 180.

[0066] Specifically, the control unit 22 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0067] The control unit 22 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and transports the substrate W into one of the plurality of chambers 110. The center robot CR also receives a processed substrate W from the chamber 110 and transports the substrate W out.

[0068] The control unit 22 controls the substrate holding and rotation mechanism 120 to start rotation of the substrate W, change the rotation speed, and stop rotation of the substrate W. For example, the control unit 22 can control the substrate holding and rotation mechanism 120 to change the rotation speed of the substrate holding and rotation mechanism 120. Specifically, the control unit 22 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 124 of the substrate holding and rotation mechanism 120.

[0069] The control unit 22 can independently control the valve 134 of the magnetic fluid supply unit 130 and the valve 144 of the rinse liquid supply unit 140 to switch the states of the valves 134, 144 between an open state and a closed state. Specifically, the control unit 22 controls the valve 134 of the magnetic fluid supply unit 130 and the valve 144 of the rinse liquid supply unit 140 to open the valves 134, 144, thereby allowing the magnetic fluid and rinse liquid flowing through the pipes 132, 142 to pass toward the nozzles 136, 146. The control unit 22 can also control the valve 134 of the magnetic fluid supply unit 130 and the valve 144 of the rinse liquid supply unit 140 to close the valves 134, 144, thereby stopping the supply of the magnetic fluid and rinse liquid flowing through the pipes 132, 142 toward the nozzles 136, 146.

[0070] The control unit 22 can independently control the movement mechanism 138 of the magnetic fluid supply unit 130 and the movement mechanism 148 of the rinsing liquid supply unit 140 to move the nozzle 136 and the nozzle 146. Specifically, the control unit 22 can independently control the movement mechanism 138 of the magnetic fluid supply unit 130 and the movement mechanism 148 of the rinsing liquid supply unit 140 to move the nozzle 136 and the nozzle 146 above the upper surface Wa of the substrate W. Furthermore, the control unit 22 can independently control the movement mechanism 138 of the magnetic fluid supply unit 130 and the movement mechanism 148 of the rinsing liquid supply unit 140 to move the nozzle 136 and the nozzle 146 to retracted positions away from above the upper surface Wa of the substrate W.

[0071] The control unit 22 may control the magnetic force application unit 150 to move the magnetic force application unit 150 relative to the substrate W. Furthermore, if the magnetic force application unit 150 includes an electromagnet, the control unit 22 may control the magnetic force application unit 150 to generate a magnetic force.

[0072] The control unit 22 may control the cup 180 to move the cup 180 relative to the substrate W. Specifically, the control unit 22 raises the cup 180 vertically upward to the side of the substrate W during the period in which the magnetic fluid supply unit 130 supplies liquid to the substrate W. Furthermore, when the period in which the magnetic fluid supply unit 130 supplies liquid to the substrate W ends, the control unit 22 lowers the cup 180 vertically downward from the side of the substrate W.

[0073] The substrate processing apparatus 100 of this embodiment is preferably used for forming semiconductor elements. For example, the substrate processing apparatus 100 is preferably used for processing a substrate W used as a semiconductor element having a stacked structure. The semiconductor element is a so-called 3D structure memory (storage device). As an example, the substrate W is preferably used as a NAND flash memory.

[0074] Next, the substrate processing method of the present embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow chart of the substrate processing method.

[0075] 4, in step S102, the substrate W is held. Specifically, the substrate holding and rotating mechanism 120 holds the substrate W. When the substrate W is loaded into the chamber 110, the substrate W is held by the substrate holding and rotating mechanism 120.

[0076] In step S104, the substrate W is rotated while being held. Specifically, the substrate holding and rotation mechanism 120 rotates the substrate W while holding it.

[0077] In step S106, the magnetic fluid is supplied to the substrate W. Specifically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W.

[0078] In step S108, a magnetic force is applied to the substrate W. Specifically, the magnetic force application unit 150 is brought close to the magnetic fluid of the substrate W. If the magnetic force application unit 150 includes an electromagnet, a current is passed through the coil of the electromagnet to generate a magnetic force. Note that in step S108, the substrate holding and rotating mechanism 120 preferably keeps the rotation speed of the substrate W low. For example, the rotation speed of the substrate W is 10 rpm. By applying a magnetic force to the magnetic fluid, the objects to be removed adhering to the substrate W are suspended in the magnetic fluid.

[0079] Even if the magnetic force of the magnetic force application unit 150 itself is constant, the closer the magnetic force application unit 150 is to the magnetic fluid of the substrate W, the stronger the magnetic force that can be applied to the magnetic fluid. The distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W may be 0.1 mm or more and 10 mm or less, 0.5 mm or more and 6 mm or less, or 1 mm or more and 5 mm or less.

[0080] In step S110, a rinse liquid is supplied to the substrate W. Specifically, the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W. The supply of the rinse liquid makes it possible to remove the magnetic fluid and the removal target from the substrate W.

[0081] Typically, the substrate holding and rotating mechanism 120 stops the rotation of the substrate W and releases the hold on the substrate W. Thereafter, the substrate W is unloaded from the substrate processing apparatus 100.

[0082] According to this embodiment, a magnetic force is applied to the substrate W with a removal target attached thereto while a magnetic fluid is supplied to the substrate W. Because the magnetic susceptibility of the magnetic fluid differs from that of the removal target, the application of the magnetic force acts vertically on the removal target. As a result, the removal target is separated from the upper surface Wa of the substrate W and floats in the magnetic fluid. Therefore, according to this embodiment, relatively small removal targets on the substrate can be sufficiently removed.

[0083] For example, if the magnetic susceptibility of the magnetic fluid supplied to the substrate W is greater than that of the object to be removed, when the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the magnetic fluid receives a force in a direction that attracts it to the magnetic force application unit 150, forming a flow in which the magnetic fluid flows vertically. As a result, the object to be removed receives a force in a direction away from the substrate W due to the flow formed in the magnetic fluid, and the object to be removed is detached from the substrate W.

[0084] Alternatively, if the magnetic susceptibility of the object to be removed is greater than the magnetic susceptibility of the magnetic fluid supplied to the substrate W, when the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the object to be removed receives a force in the magnetic fluid that attracts it to the magnetic force application unit 150. As a result, the object to be removed receives a force in a direction away from the substrate W, and the object to be removed is detached from the substrate W.

[0085] This embodiment is preferably used for a substrate W after chemical mechanical polishing (CMP).

[0086] The material to be removed may be the abrasive used in the CMP process of the substrate W. For example, the material to be removed is CeO or SiO 2 .

[0087] Alternatively, the object to be removed may be particles scraped off from the surface layer of the substrate W. Typically, the surface layer of the substrate W after CMP is formed of a metal, Si, SiO2, SiC, GaN, etc. Examples of metals that form the surface layer of the substrate W after CMP include aluminum, tungsten, copper, cobalt, ruthenium, molybdenum, etc. The surface layer of the substrate W may include a native oxide film.

[0088] For example, bmin[FeCl4] may be used as the magnetic fluid. bmin[FeCl4] is known as a magnetic ionic liquid with a relatively high magnetic susceptibility. The magnetic susceptibility of bmin[FeCl4] is 0.0137 emu / mol at room temperature, and the mass magnetization of bmin[FeCl4] is 40.6 × 10 -6emu / g. The dynamic viscosity of bmin[FeCl4] is 43 mPas at room temperature.

[0089] First, let's consider the effect on iron of a cylindrical neodymium magnet with a diameter of 10 mm and a height of 10 mm. If the magnetic flux density of the neodymium magnet is 0.55 T, the magnetic force acting on iron located 1 mm away from the center of the end face of the cylinder is 0.461 kgf (= 4.5 N).

[0090] Next, we consider a case in which a cylindrical neodymium magnet with a diameter of 10 mm and a height of 10 mm is used as the magnetic force application unit 150, bmin[FeCl4] is used as the magnetic fluid, and SiO2 particles are present as the object to be removed in the magnetic fluid 1 mm away from the neodymium magnet. The mass magnetization of SiO2 is 1 / 100 or less of bmin[FeCl4], and the magnetization of SiO2 is negligible compared to the magnetization of bmin[FeCl4].

[0091] Since the magnetic susceptibility of iron, which we discussed earlier, is 218 emu / g, if we replace iron with bmim, the magnetic force acting on bmim is 840 nN (= 4.5 × 40.6 × 10 -6 / 218).

[0092] On the other hand, the adhesive force of SiO2 particles with a particle size of 10 nm to 100 nm that adhere to a substrate is approximately 100 to 1000 nN when measured with an AFM. Therefore, if bmin[FeCl4] is used as a magnetic fluid together with the neodymium magnet mentioned above, the SiO2 particles that have adhered to the substrate can be removed by magnetic force.

[0093] Furthermore, when the magnetic force generated between the neodymium magnet and bmin[FeCl4] was calculated as a function of the distance between the neodymium magnet and bmin[FeCl4], it was found that when the distance between the neodymium magnet and bmin[FeCl4] was 0.5 mm, the magnetic force exerted on the object to be removed in the magnetic fluid was approximately 1000 nN, and when this distance was 5 mm, the magnetic force was approximately 100 nN.

[0094] Therefore, by using a cylindrical neodymium magnet with a diameter of 10 mm, a height of 10 mm, and a magnetic flux density of 0.55 T as the magnetic force application unit 150, when the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W is 0.5 mm, a magnetic force of approximately 1000 nN can be applied to the material to be removed in the magnetic fluid (bmin[FeCl4]) on the upper surface Wa of the substrate W. Similarly, when the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W is 5 mm, a magnetic force of approximately 100 nN can be applied to the material to be removed (SiO2) in the magnetic fluid (bmin[FeCl4]) on the upper surface Wa of the substrate W.

[0095] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 5. Figures 5(a) to 5(d) are schematic diagrams of the substrate processing method of this embodiment.

[0096] 5(a), a material to be removed is attached to the substrate W. In this example, the material to be removed is attached to the substrate W that has been planarized.

[0097] 5(b), a magnetic fluid is supplied to the substrate W. In detail, the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W. Typically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W while the substrate holding and rotation mechanism 120 rotates the substrate W at a relatively low rotation speed.

[0098] 5(c), a magnetic force is applied to the magnetic fluid while it is present on the upper surface Wa of the substrate W. Specifically, a magnetic force application unit 150 that generates a magnetic force is brought close to the magnetic fluid on the substrate W. The application of the magnetic force causes the objects to be removed to float in the magnetic fluid.

[0099] Note that by bringing the magnetic force application unit 150 closer to the magnetic fluid, a stronger force can be applied to the object to be removed within the magnetic fluid. For example, the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W may be 0.1 mm or more and 10 mm or less, 0.5 mm or more and 6 mm or less, or 1 mm or more and 5 mm or less.

[0100] 5(d), the magnetic fluid and the removal target are removed from the substrate W. In detail, the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W, thereby removing the magnetic fluid and the removal target from the upper surface Wa of the substrate W.

[0101] As described above, according to this embodiment, the removal target material adhering to the substrate W can be removed from the substrate W.

[0102] The magnetic force applying unit 150 may apply the magnetic force all at once to the entire substrate W. This can shorten the time required to apply the magnetic force to the magnetic fluid.

[0103] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 6. Figure 6 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 6 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 2, except that the magnetic force application unit 150 further includes a magnetic force generator 152 and a movement mechanism 158, and therefore, redundant description will be omitted to avoid redundancy.

[0104] 6, in the substrate processing apparatus 100, the magnetic force application unit 150 includes a magnetic force generator 152 and a movement mechanism 158. The magnetic force generator 152 generates a magnetic force. The magnetic force generator 152 may be a permanent magnet. Alternatively, the magnetic force generator 152 may be an electromagnet. When the magnetic force generator 152 is an electromagnet, the magnetic force generator 152 generates a magnetic force when a current is applied to the magnetic force generator 152.

[0105] The movement mechanism 158 moves the magnetic force generator 152. When the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the movement mechanism 158 moves the magnetic force generator 152 to a position facing the upper surface Wa of the substrate W. After the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the movement mechanism 158 moves the magnetic force generator 152 from the position facing the upper surface Wa of the substrate W to a retracted position.

[0106] The magnetic force generator 152 has an annular shape. For example, the magnetic force generator 152 has an annular shape. A through-hole 152h is provided in the magnetic force generator 152. The through-hole 152h has a circular shape.

[0107] The outer diameter of the magnetic force generator 152 is approximately equal to the diameter of the substrate W. For example, the outer diameter of the magnetic force generator 152 is 90% or more and 110% or less of the diameter of the substrate W.

[0108] The inner diameter of the magnetic force generator 152 (outer diameter of the through-hole 152h) is approximately equal to the outer diameter (length along the horizontal direction) of the nozzle 136 or slightly larger than the outer diameter of the nozzle 136. For example, the inner diameter of the magnetic force generator 152 is 102% or more and 110% or less of the diameter of the substrate W. In this case, the nozzle 136 ejects the magnetic fluid onto the substrate W while inserted into the through-hole 152h of the magnetic force generator 152.

[0109] Alternatively, the inner diameter of the magnetic force generator 152 may be smaller than the outer diameter (length along the horizontal direction) of the nozzle 136. For example, the inner diameter of the magnetic force generator 152 may be smaller than the outer diameter (length along the horizontal direction) of the nozzle 136 and larger than the width (length along the horizontal direction) of the magnetic fluid discharged from the nozzle 136. In this case, the nozzle 136 discharges the magnetic fluid onto the substrate W from a position vertically above the magnetic force generator 152.

[0110] The moving mechanism 158 moves the magnetic force generator 152 to the upper surface Wa of the substrate W. Typically, when applying a magnetic force to the magnetic fluid supplied to the substrate W, the moving mechanism 158 moves the magnetic force generator 152 to a position facing the upper surface Wa of the substrate W. For example, the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W may be 0.1 mm or more and 10 mm or less, 0.5 mm or more and 6 mm or less, or 1 mm or more and 5 mm or less.

[0111] The moving mechanism 158 also moves the magnetic force generator 152 from the upper surface of the substrate W. Typically, the moving mechanism 158 applies a magnetic force to the magnetic fluid supplied to the substrate W, and then moves the magnetic force generator 152 from the upper surface of the substrate W to a retracted position.

[0112] Movement mechanism 158 has arm 158a, shaft 158b, and drive unit 158c. Arm 158a, shaft 158b, and drive unit 158c of movement mechanism 158 have the same configuration as arm 138a, shaft 138b, and drive unit 138c of movement mechanism 138. Therefore, detailed description of arm 158a, shaft 158b, and drive unit 158c will be omitted.

[0113] 6, the magnetic force application unit 150 applies magnetic force to the entire surface of the substrate W at once, but this embodiment is not limited to this. The magnetic force application unit 150 may apply magnetic force while scanning the substrate W.

[0114] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 7 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 6, except that the shape of the magnetic force generator 152 is different, and therefore, redundant description will be omitted to avoid redundancy.

[0115] 7, in the substrate processing apparatus 100, the outer diameter (length along the horizontal direction) of the magnetic force generator 152 is smaller than the radius of the substrate W. For example, the outer diameter (length along the horizontal direction) of the magnetic force generator 152 is 5% or more and 30% or less of the radius of the substrate W.

[0116] When applying a magnetic force to the magnetic fluid, the magnetic force generator 152 scans the upper surface Wa of the substrate W. For example, the magnetic force generator 152 may scan the upper surface Wa of the substrate W from the center of the substrate W toward the outside in the radial direction. In this case, the moving mechanism 158 moves the magnetic force generator 152 from the center of the substrate W toward the outside in the radial direction while bringing the magnetic force generator 152 close to the upper surface Wa of the substrate W to a predetermined distance.

[0117] Alternatively, the magnetic force generator 152 may scan the upper surface Wa of the substrate W from the outer side in the radial direction of the substrate W toward the center. In this case, the movement mechanism 158 moves the magnetic force generator 152 from the outer side in the radial direction of the substrate W toward the center while keeping the magnetic force generator 152 close to the upper surface Wa of the substrate W by a predetermined distance. When the magnetic force generator 152 approaches the center of the substrate W, the magnetic force generator 152 stops. Thereafter, the magnetic force generator 152 rises in a direction away from the upper surface Wa of the substrate W and then returns to the retracted position.

[0118] In this embodiment, the magnetic force generator 152 scans the upper surface Wa of the substrate W, so that not only a vertical force but also a diagonally upward force acts on the object to be removed. In this way, by scanning the magnetic force generator 152, a force can be applied to the object to be removed diagonally upward, so that the object to be removed can be sufficiently removed. In particular, when the object to be removed is present in a space or recess in the substrate W, the object to be removed can be efficiently removed from the substrate W by scanning the magnetic force generator 152.

[0119] 1 to 7, the removal target material adhering to the substrate W is peeled off from the substrate W by applying a magnetic force to the magnetic fluid on the substrate W, but this embodiment is not limited to this. The removal target material adhering to the substrate W may be peeled off from the substrate W by supplying a mixed fluid to the substrate W in addition to applying a magnetic force to the magnetic fluid on the substrate W.

[0120] Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to Figures 1 to 8. Figure 8 is a schematic diagram of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 in Figure 8 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 2, except that it further includes a mixed fluid supply unit 160, and therefore, redundant description will be omitted to avoid redundancy.

[0121] 8, the substrate processing apparatus 100 further includes a mixed fluid supply unit 160. The mixed fluid supply unit 160 supplies a mixed fluid obtained by mixing a gas and a liquid to the substrate W. The mixed fluid supply unit 160 forms a mist by mixing the gas and the liquid.

[0122] The mixed fluid supply unit 160 may generate the mixed fluid by mixing the gas and the liquid inside the mixed fluid supply unit 160. Alternatively, the mixed fluid supply unit 160 may generate the mixed fluid by mixing the gas and the liquid outside the mixed fluid supply unit 160 (for example, on the upper surface Wa of the substrate W).

[0123] Here, the mixed fluid supply unit 160 includes a pipe 162a, a valve 164a, a pipe 162b, a valve 164b, a nozzle 166, and a movement mechanism 168. A liquid is supplied to the pipe 162a from a supply source. For example, the liquid is water. Alternatively, the liquid may be any of the components exemplified as the rinse liquid. The pipe 162a connects the supply source and the nozzle 166. The valve 164a opens and closes the flow path in the pipe 162a.

[0124] A gas is supplied to the pipe 162b from a supply source. For example, the gas is nitrogen gas. The gas may be an inert gas other than nitrogen or dry air. The pipe 162b connects the supply source to the nozzle 166. The valve 164b opens and closes the flow path in the pipe 162b.

[0125] The nozzle 166 is supplied with liquid via the pipe 162b, and also with gas via the pipe 162b. Therefore, a mixed fluid of the liquid and the gas is generated in the nozzle 166. The nozzle 166 ejects the mixed fluid onto the upper surface Wa of the substrate W. The nozzle 166 is preferably configured to be movable relative to the substrate W.

[0126] Movement mechanism 168 has arm 168a, shaft 168b, and drive unit 168c. Arm 168a, shaft 168b, and drive unit 168c of movement mechanism 168 have the same configuration as arm 138a, shaft 138b, and drive unit 138c of movement mechanism 138. Therefore, detailed description of arm 168a, shaft 168b, and drive unit 168c will be omitted.

[0127] The substrate processing apparatus 100 of this embodiment can apply a magnetic force to the magnetic fluid supplied to the substrate W and supply a mixed fluid to the substrate W. By applying a magnetic force to the magnetic fluid supplied to the substrate W, relatively small objects to be removed on the substrate W can be suitably removed. On the other hand, if the size of the objects to be removed is relatively large, the objects may not be removed by the magnetic force unless the magnetic flux density of the magnetic force application unit 150 is large. However, if the magnetic flux density of the magnetic force application unit 150 is too large, the substrate W may be affected.

[0128] The substrate processing apparatus 100 of this embodiment supplies the fluid mixture to the substrate W, and therefore can suitably remove objects to be removed on the substrate W. For example, the fluid mixture can suitably remove objects to be removed that are relatively large in size on the substrate W. When the fluid mixture is supplied to the substrate W, the radial flow intensity of the fluid mixture increases with increasing distance from the upper surface Wa of the substrate W, and therefore the fluid mixture can remove objects to be removed that are relatively large in size.

[0129] Next, a substrate processing method of this embodiment will be described with reference to Figures 1 to 9. Figure 9 is a flow diagram of the substrate processing method. The flow diagram of Figure 9 is similar to the substrate processing method described above with reference to Figure 4, except for the addition of step S105 of supplying a mixed fluid, and therefore, to avoid redundancy, duplicated description will be omitted.

[0130] 9, in step S102, the substrate W is held. Specifically, the substrate holding and rotating mechanism 120 holds the substrate W.

[0131] In step S104, the substrate W is rotated while being held by the substrate holding and rotation mechanism 120. In detail, the substrate W is rotated while being held by the substrate holding and rotation mechanism 120.

[0132] In step S105, the fluid mixture is supplied to the substrate W. More specifically, the fluid mixture supply unit 160 supplies the fluid mixture to the substrate W.

[0133] In step S106, the magnetic fluid is supplied to the substrate W. More specifically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W.

[0134] In step S108, a magnetic force is applied to the magnetic fluid of the substrate W. Specifically, the magnetic force application unit 150 is brought closer to the magnetic fluid of the substrate W. Alternatively, if the magnetic force application unit 150 includes an electromagnet, the supply of power to the electromagnet may be started.

[0135] When the magnetic force application unit 150 applies a magnetic force to the magnetic fluid of the substrate W, the magnetic fluid is subjected to the magnetic force, and therefore the magnetic fluid is subjected to a force that moves it closer to the magnetic force application unit 150. As a result, the magnetic fluid is subjected to a force that acts in the vertical direction in addition to the centrifugal force that acts in the horizontal direction when the substrate W is rotated by the substrate holding and rotation mechanism 120.

[0136] In step S110, a rinse liquid is supplied to the substrate W. In detail, the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W, whereby the magnetic fluid can be removed from the substrate W together with the removal target, and the upper surface Wa of the substrate W can be rinsed.

[0137] The substrate processing apparatus 100 of this embodiment can apply a magnetic force to the magnetic fluid supplied to the substrate W and can also supply a mixed fluid to the substrate W. By applying a magnetic force to the magnetic fluid supplied to the substrate W, relatively small objects to be removed on the substrate W can be suitably removed. Furthermore, by supplying a mixed fluid to the substrate W, relatively large objects to be removed on the substrate W can be suitably removed.

[0138] 9, the supply of the mixed fluid in step S105 is performed before the supply of the magnetic fluid in step S106, but this embodiment is not limited to this. The supply of the mixed fluid in step S105 may be performed after the supply of the magnetic fluid in step S106.

[0139] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 10. Figures 10(a) to 10(e) are schematic diagrams of the substrate processing method of this embodiment.

[0140] 10(a), objects to be removed are attached to the substrate W. Here, objects to be removed of different sizes are attached to the substrate W.

[0141] 10(b), the mixed fluid is supplied to the substrate W. In detail, the mixed fluid supply unit 160 supplies the mixed fluid to the upper surface Wa of the substrate W. Typically, by supplying the mixed fluid, relatively large removal targets adhering to the upper surface Wa of the substrate W can be removed.

[0142] 10(b), the radial flow intensity of the mixed fluid is quite small near the upper surface Wa of the substrate W and gradually increases with increasing distance from the upper surface Wa of the substrate W. Therefore, the mixed fluid can wash away relatively large objects to be removed, but cannot wash away relatively small objects to be removed. For example, when the size of the objects to be removed is 20 nm or less, the objects to be removed may not be sufficiently removed even when the mixed fluid is supplied.

[0143] 10(c), the magnetic fluid is supplied to the substrate W. In detail, the magnetic fluid supply unit 130 supplies the magnetic fluid to the upper surface Wa of the substrate W.

[0144] 10(d), a magnetic force is applied to the magnetic fluid in a state where the magnetic fluid is present on the substrate W. In detail, the magnetic force application unit 150 applies a magnetic force to the magnetic fluid on the upper surface Wa of the substrate W. For example, the magnetic force generator 152 approaches the magnetic fluid on the upper surface Wa of the substrate W.

[0145] 10(e), the magnetic fluid and the removal target are removed from the upper surface Wa of the substrate W. More specifically, the rinse liquid supply unit 140 supplies the substrate W with a rinse liquid.

[0146] According to this embodiment, a magnetic force can be applied to the magnetic fluid supplied to the substrate W, and a mixed fluid can also be supplied to the substrate W. By applying a magnetic force to the magnetic fluid supplied to the substrate W, relatively small objects to be removed on the substrate W can be suitably removed. Furthermore, by supplying the mixed fluid to the substrate W, relatively large objects to be removed on the substrate W can be suitably removed.

[0147] A plurality of grooves may be provided on the upper surface Wa of the substrate W. The substrate W may also have a patterned shape. In this case, the substrate processing apparatus 100 preferably supplies a removing liquid after supplying a rinsing liquid in order to prevent the pattern from collapsing.

[0148] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 11. Figure 11 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 11 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 8, except that it further includes a removing liquid supply unit 170, and therefore, redundant description will be omitted to avoid redundancy.

[0149] As shown in FIG. 11, the substrate processing apparatus 100 further includes a removing liquid supply unit 170. The removing liquid supply unit 170 supplies a removing liquid to the substrate W. The removing liquid is a liquid for removing the rinse liquid. By supplying the removing liquid to the substrate W, the rinse liquid is replaced with the removing liquid. The removing liquid is preferably a liquid that is more volatile than the rinse liquid. The removing liquid is preferably compatible with the rinse liquid.

[0150] For example, the removal liquid is an organic solvent, such as a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene.

[0151] The removing liquid supply unit 170 includes a pipe 172, a valve 174, a nozzle 176, and a moving mechanism 178. The removing liquid is supplied to the pipe 172 from a supply source. The valve 174 opens and closes a flow path in the pipe 172. The nozzle 176 is connected to the pipe 172. The nozzle 176 ejects the removing liquid onto the upper surface Wa of the substrate W. The nozzle 176 is preferably configured to be movable relative to the substrate W.

[0152] Typically, while the removing liquid supply unit 170 supplies the removing liquid to the substrate W, the substrate holding and rotating mechanism 120 rotates while holding the substrate W. Due to the rotation of the substrate W, the removing liquid supplied to the substrate W from the removing liquid supply unit 170 flows radially outward on the substrate W.

[0153] Movement mechanism 178 has arm 178a, shaft 178b, and drive unit 178c. Arm 178a, shaft 178b, and drive unit 178c of movement mechanism 178 have the same configuration as arm 138a, shaft 138b, and drive unit 138c of movement mechanism 138. Therefore, detailed description of arm 178a, shaft 178b, and drive unit 178c will be omitted.

[0154] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a flow chart of the substrate processing method of this embodiment.

[0155] 12, in step Sa, the substrate W is loaded into the substrate processing apparatus 100. Specifically, the substrate W is loaded into the chamber 110.

[0156] In step Sb, the substrate W is held in the substrate processing apparatus 100. More specifically, the substrate holding and rotating mechanism 120 holds the substrate W in the chamber 110.

[0157] In step Sc, the substrate processing apparatus 100 rotates the substrate W. Specifically, the substrate holding and rotating mechanism 120 in the chamber 110 starts rotating the substrate W.

[0158] In step Sd, the substrate processing apparatus 100 supplies the fluid mixture to the substrate W. More specifically, the fluid mixture supply unit 160 supplies the fluid mixture to the substrate W.

[0159] In step Se, the substrate processing apparatus 100 supplies the magnetic fluid to the substrate W. More specifically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W.

[0160] In step Sf, the substrate processing apparatus 100 applies a magnetic force to the substrate W. For example, the magnetic force application unit 150 is brought closer to the substrate W. By applying the magnetic force, the removal target is detached from the upper surface Wa of the substrate W and suspended in the magnetic fluid.

[0161] In step Sg, the substrate processing apparatus 100 supplies a rinse liquid to the substrate W. Specifically, the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W. The supply of the rinse liquid removes the magnetic fluid and the removal target from the substrate W.

[0162] In step Sh, the substrate processing apparatus 100 supplies the removing liquid to the substrate W. Specifically, the removing liquid supply unit 170 supplies the removing liquid to the substrate W. By supplying the removing liquid, the rinsing liquid on the substrate W is replaced with the removing liquid.

[0163] In step Si, the substrate processing apparatus 100 spin-dries the substrate W. This dries the removal liquid from the substrate W. For example, the substrate holding and rotation mechanism 120 increases the rotation speed of the substrate W. In one example, the substrate holding and rotation mechanism 120 increases the rotation speed of the substrate W from 300 rpm to 1500 rpm.

[0164] In step Sj, the substrate processing apparatus 100 unloads the substrate W. For example, the substrate holding and rotation mechanism 120 stops the rotation of the substrate W and releases its hold on the substrate W. Thereafter, the center robot CR removes the substrate W from the chamber 110. Thereafter, the substrate W is unloaded to the outside of the substrate processing system 10 via the indexer robot IR.

[0165] As described above, according to this embodiment, the removal target material can be sufficiently removed from the substrate W transferred to the substrate processing apparatus 100.

[0166] In the above description, the substrate processing apparatus 100 of this embodiment processes the substrate W after the CMP process, but this embodiment is not limited to this. The substrate processing apparatus 100 of this embodiment may process a substrate after a process other than the CMP process.

[0167] For example, the substrate processing apparatus 100 of this embodiment may process a substrate W after dry etching. For example, the surface layer of the substrate W after dry etching is formed of a low-k film, TiN, SiO2, Si, SiN, SiC, or Poly-Si. In this case, too, objects to be removed from the surface layer of the substrate W may remain on the substrate W. The objects to be removed may be particles scraped off from the surface layer of the substrate W.

[0168] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention. [Industrial Applicability]

[0169] The present invention is suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0170] 100 Substrate processing apparatus 110 Chamber 120 Substrate holding and rotating mechanism 130 Magnetic fluid supply section 140 Rinse liquid supply unit 150 Magnetic force application unit W substrate

Claims

1. a substrate holding and rotating mechanism that holds the substrate in a horizontal direction and rotates the substrate; a magnetic fluid supply unit that supplies a magnetic fluid to the substrate held by the substrate holding and rotating mechanism; a magnetic force applying unit that applies a magnetic force to the magnetic fluid supplied to the substrate; a rinse liquid supply unit that supplies a rinse liquid to the substrate to remove the magnetic fluid from the substrate; a control unit that controls the substrate holding and rotating mechanism, the magnetic fluid supply unit, the magnetic force application unit, and the rinse liquid supply unit; Equipped with The magnetic force applying unit a magnetic force generator that generates a magnetic force; a moving mechanism that moves the magnetic force generator; Equipped with The control unit controls the magnetic fluid supply unit and the moving mechanism so that the magnetic force generator approaches the substrate while the magnetic fluid supply unit supplies the magnetic fluid to the substrate.

2. The substrate processing apparatus according to claim 1 , wherein the control unit controls the moving mechanism so that the magnetic force generator is positioned at a distance of 0.1 mm to 10 mm from the substrate.

3. A substrate holding and rotating mechanism that holds a substrate in a horizontal direction and rotates the substrate; a magnetic fluid supply unit that supplies a magnetic fluid to the substrate held by the substrate holding and rotating mechanism; a magnetic force applying unit that applies a magnetic force to the magnetic fluid supplied to the substrate; a rinse liquid supply unit that supplies a rinse liquid to the substrate to remove the magnetic fluid from the substrate; a control unit that controls the substrate holding and rotating mechanism, the magnetic fluid supply unit, the magnetic force application unit, and the rinse liquid supply unit; a mixed fluid supply unit that supplies a mixed fluid obtained by mixing a liquid and a gas to the substrate; A substrate processing apparatus comprising:

4. The substrate processing apparatus according to claim 3 , wherein the control unit controls the fluid mixture supply unit so that the fluid mixture supply unit supplies the fluid mixture to the substrate before the magnetic fluid supply unit supplies the magnetic fluid to the substrate.

5. 5. The substrate processing apparatus according to claim 1, wherein the magnetic fluid supply unit supplies a magnetic ionic liquid as the magnetic fluid.

6. a substrate holding step of holding the substrate in a horizontal direction; a substrate rotating step of rotating the substrate held in the substrate holding step; a magnetic fluid supplying step of supplying a magnetic fluid to the substrate rotating in the substrate rotating step; a magnetic force applying step of applying a magnetic force to the magnetic fluid supplied to the substrate in the magnetic fluid supplying step; a rinse liquid supply step of removing the magnetic fluid from the substrate by supplying a rinse liquid to the substrate; It encompasses The magnetic force applying step includes: a moving step of moving a magnetic force generator so as to approach the substrate while the magnetic fluid is being supplied to the substrate in the magnetic fluid supplying step; a magnetic force generating step in which the magnetic force generator generates a magnetic force after the magnetic force generator has moved in the moving step; A substrate processing method comprising:

7. 7. The substrate processing method according to claim 6, wherein in the moving step, the magnetic force generator moves a distance of 0.1 mm to 10 mm relative to the substrate.

8. A substrate holding step of holding the substrate in a horizontal direction; a substrate rotating step of rotating the substrate held in the substrate holding step; a magnetic fluid supplying step of supplying a magnetic fluid to the substrate rotating in the substrate rotating step; a magnetic force applying step of applying a magnetic force to the magnetic fluid supplied to the substrate in the magnetic fluid supplying step; a rinse liquid supply step of removing the magnetic fluid from the substrate by supplying a rinse liquid to the substrate; a mixed fluid supplying step of supplying a mixed fluid obtained by mixing a liquid and a gas onto the substrate; A substrate processing method comprising:

9. The substrate processing method according to claim 8 , wherein the mixed fluid supplying step supplies the mixed fluid to the substrate before the magnetic fluid is supplied to the substrate in the magnetic fluid supplying step.

10. 10. The substrate processing method according to claim 6, wherein the magnetic fluid supplying step includes a step of supplying a magnetic ionic liquid as the magnetic fluid.

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