Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing apparatus which can quickly and sufficiently remove an organic film such as a resist from a substrate.SOLUTION: One batch of substrates W is immersed in sulfuric acid-containing liquid in a sulfuric acid tank 20 (a sulfuric acid immersion step). The one batch of substrates W which is immersed in the sulfuric acid tank 20 in the sulfuric acid immersion step is taken out from the sulfuric acid tank 20 and conveyed to an ozone gas treatment unit 6 (a conveyance step). The one batch of substrates W which is conveyed to the ozone gas treatment unit 6 is exposed to ozone-containing gas (an ozone exposure step).SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method for processing a substrate, and a substrate processing apparatus for processing a substrate.

[0002] Substrates to be processed include, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (Electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0003] In the substrate processing apparatus disclosed in Patent Document 1 below, ozone gas is supplied to sulfuric acid in a pipe, and ozone is dissolved in the sulfuric acid to form sulfuric acid ozone. By mixing sulfuric acid and ozone, peroxodisulfuric acid (SO2O8) is generated as an active species (etchant). 2- ) is generated.

[0004] In the substrate processing apparatus of Patent Document 1, sulfuric acid ozone flows through a sulfuric acid ozone supply pipe and flows into a water mixing section where it is mixed with water to form a sulfuric acid ozone / water mixture. The sulfuric acid ozone / water mixture is ejected from a sulfuric acid ozone / water nozzle toward the substrate, and the substrate is rotated while the sulfuric acid ozone / water mixture is supplied to the surface of the substrate, thereby removing the resist on the surface of the substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-36101 Summary of the Invention [Problem to be solved by the invention]

[0006] In the substrate processing apparatus disclosed in Patent Document 1, the temperature of the sulfuric acid ozone / water mixture becomes higher than the temperature of the sulfuric acid ozone before mixing due to the heat of dilution generated by mixing sulfuric acid ozone with water. Therefore, even if a relatively low temperature of sulfuric acid ozone is used as the sulfuric acid ozone before mixing, the sulfuric acid ozone / water mixture can be supplied to the surface of the substrate at a temperature required for resist removal. Furthermore, by keeping the sulfuric acid ozone before mixing at a relatively low temperature, a large amount of ozone gas can be dissolved in the sulfuric acid ozone before mixing.

[0007] However, in the device of Patent Document 1, the concentration of peroxodisulfuric acid, which has oxidizing power, decreases when sulfuric acid ozone is mixed with water, which may result in insufficient oxidizing power being obtained.

[0008] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a substrate processing method and a substrate processing apparatus that can quickly and thoroughly remove an organic film such as a resist from a substrate. [Means for solving the problem]

[0009] One embodiment of the present invention provides a substrate processing method including a sulfuric acid immersion step of immersing a plurality of substrates in a sulfuric acid-containing liquid in a sulfuric acid tank, a transport step of removing the plurality of substrates from the sulfuric acid tank and transporting the plurality of substrates to an ozone gas processing unit, and an ozone exposure step of exposing the plurality of substrates transported to the ozone gas processing unit to an ozone-containing gas.

[0010] According to this method, a plurality of substrates simultaneously immersed in a sulfuric acid-containing liquid are exposed to an ozone-containing gas by an ozone gas treatment unit, whereby ozone in the ozone-containing gas is dissolved in the sulfuric acid-containing liquid adhering to the plurality of substrates removed from the sulfuric acid-containing liquid, thereby generating peroxodisulfuric acid in the sulfuric acid-containing liquid.

[0011] As a result, the organic film such as resist can be removed from the substrate quickly and thoroughly.

[0012] The ozone-containing gas contains gaseous ozone (ozone gas), and the sulfuric acid-containing liquid contains sulfuric acid, such as an aqueous sulfuric acid solution. In one embodiment of the present invention, the transporting step transports the plurality of substrates from the sulfuric acid tank to the ozone gas treatment unit in a state in which the sulfuric acid-containing liquid adheres to the surfaces of the plurality of substrates. In one embodiment of the present invention, the ozone exposure step comprises dissolving the ozone-containing gas in the sulfuric acid-containing liquid attached to the surfaces of the plurality of substrates to generate peroxodisulfuric acid in the sulfuric acid-containing liquid.

[0013] In one embodiment of the present invention, the ozone gas treatment unit includes a gas treatment chamber that accommodates a plurality of the substrates, and the ozone exposure step includes a step of exposing the plurality of substrates to an ozone-containing gas by placing the plurality of substrates removed from the sulfuric acid bath in a treatment space within the gas treatment chamber.

[0014] According to this method, a plurality of substrates can be exposed to the ozone-containing gas almost simultaneously in the processing space, and therefore, the organic film can be removed from the substrates more quickly and thoroughly.

[0015] In one embodiment of the present invention, the ozone exposure process includes a process of exposing the plurality of substrates placed in the processing space to the ozone-containing gas by supplying an ozone-containing gas into the processing space through a plurality of supply holes opening in a wall portion that partitions the processing space and evacuating the processing space through a plurality of exhaust holes opening in the wall portion.

[0016] According to this method, an ozone-containing gas is supplied to the processing space through a plurality of supply holes formed in a wall partitioning the processing space, and the processing space is exhausted through a plurality of exhaust holes formed in the wall. Therefore, even if the ozone in the atmosphere in contact with the sulfuric acid-containing liquid on the substrate is consumed by dissolving in the sulfuric acid-containing liquid, the ozone-containing gas supplied to the processing space still supplies ozone to the atmosphere in contact with the sulfuric acid-containing liquid adhering to the substrate. Therefore, the ozone concentration in the atmosphere in contact with the sulfuric acid-containing liquid on the substrate can be maintained at a sufficiently high level. Therefore, peroxodisulfuric acid can be generated in the sulfuric acid-containing liquid on the substrate.

[0017] In one embodiment of the present invention, a plurality of supply hole rows, each of which is formed by a plurality of the supply holes, are aligned in a predetermined arrangement direction in the gas processing chamber, and the ozone exposure step includes a step of arranging the plurality of substrates in the processing space such that the plurality of substrates are aligned in the arrangement direction and each substrate is positioned between adjacent ones of the supply hole rows.

[0018] According to this method, the ozone-containing gas is supplied from each supply hole array between the substrates. Therefore, a sufficient amount of ozone can be supplied to the atmosphere in contact with the sulfuric acid-containing liquid on each substrate, and the ozone can be sufficiently dissolved in the sulfuric acid-containing liquid on each substrate. As a result, uneven removal of the organic film between the substrates can be reduced.

[0019] In one embodiment of the present invention, the sulfuric acid immersion step includes immersing the plurality of substrates in a vertical position in the sulfuric acid bath. sulfuric acid-containing liquid The substrate processing method further includes a position change step of changing the position of the substrates removed from the sulfuric acid tank from a vertical position to a horizontal position, and the ozone exposure step includes a horizontal exposure step of exposing the substrates in a horizontal position to an ozone-containing gas.

[0020] According to this method, multiple substrates can be immersed in the sulfuric acid-containing liquid in a vertical position. Therefore, multiple substrates can be immersed in the sulfuric acid-containing liquid at approximately the same time. Furthermore, according to this method, the orientation of the multiple substrates is changed from a vertical position to a horizontal position, and then the multiple substrates are exposed to an ozone-containing gas. Therefore, unevenness in the thickness of the sulfuric acid-containing liquid at each position on the substrate, which is caused by the sulfuric acid-containing liquid adhering to the vertically oriented substrate moving downward due to its own weight, can be suppressed. Therefore, uneven removal of the organic film at each position on the substrate can be reduced.

[0021] In one embodiment of the present invention, the substrate processing method further includes a substrate rotation step of rotating the plurality of substrates around a vertical axis passing through the centers of the plurality of substrates in a horizontal orientation after the orientation change step and before the plurality of substrates are exposed to an ozone-containing gas in the ozone exposure step.

[0022] Therefore, excess sulfuric acid-containing liquid can be removed from the substrate, improving the uniformity of the thickness of the sulfuric acid-containing liquid at each position on the substrate. This increases the uniformity of the ozone concentration in the sulfuric acid-containing liquid at each position on the substrate. As a result, uneven removal of the organic film at each position on the substrate can be reduced.

[0023] In one embodiment of the present invention, the processing space is disposed directly above the sulfuric acid bath, and the transporting step includes a step of lifting the plurality of substrates from the sulfuric acid bath to place the plurality of substrates in the processing space.

[0024] According to this method, the substrates can be moved from the sulfuric acid tank to the processing space by one-way movement, i.e., by lifting the substrates from the sulfuric acid tank. Therefore, after the sulfuric acid-containing liquid is applied to the substrates, the substrates can be quickly exposed to the ozone-containing gas. Therefore, the organic film can be quickly removed from the substrates.

[0025] Another embodiment of the present invention provides a substrate processing apparatus including a sulfuric acid tank that stores a sulfuric acid-containing liquid in which multiple substrates can be immersed, an ozone gas processing unit that exposes the multiple substrates to an ozone-containing gas, and a transport unit that transports the multiple substrates between the sulfuric acid tank and the ozone gas processing unit.

[0026] According to this apparatus, a plurality of substrates simultaneously immersed in a sulfuric acid-containing liquid are exposed to an ozone-containing gas by an ozone gas treatment unit, whereby ozone in the ozone-containing gas is dissolved in the sulfuric acid-containing liquid adhering to the plurality of substrates removed from the sulfuric acid-containing liquid, thereby generating peroxodisulfuric acid in the sulfuric acid-containing liquid adhering to the plurality of substrates.

[0027] As a result, the organic film such as resist can be removed from the substrate quickly and thoroughly. In one embodiment of the present invention, the transport unit transports the plurality of substrates from the sulfuric acid tank to the ozone gas treatment unit in a state in which the sulfuric acid-containing liquid adheres to the surfaces of the plurality of substrates. In one embodiment of the present invention, the ozone gas treatment unit dissolves the ozone-containing gas in the sulfuric acid-containing liquid attached to the surfaces of the plurality of substrates to generate peroxodisulfuric acid in the sulfuric acid-containing liquid.

[0028] In another embodiment of the present invention, the ozone gas processing unit includes a gas processing chamber having a processing space capable of accommodating a plurality of substrates and exposing the plurality of substrates accommodated in the processing space to an ozone-containing gas.

[0029] This apparatus allows multiple substrates to be exposed to the ozone-containing gas almost simultaneously within the processing space, thereby enabling organic films to be removed from the substrates more quickly and thoroughly.

[0030] In another embodiment of the present invention, the gas processing chamber has a wall portion that partitions the processing space, a plurality of supply holes that open in the wall portion and supply ozone-containing gas to the processing space, and a plurality of exhaust holes that open in the wall portion and evacuate the processing space.

[0031] According to this apparatus, an ozone-containing gas is supplied to the processing space through a plurality of supply holes formed in a wall section that partitions the processing space, and the processing space is exhausted through a plurality of exhaust holes formed in the wall section. Therefore, even if the ozone in the atmosphere in contact with the sulfuric acid-containing liquid on the substrate is consumed by dissolving in the sulfuric acid-containing liquid, the ozone-containing gas supplied to the processing space still supplies ozone to the atmosphere in contact with the sulfuric acid-containing liquid adhering to the substrate. Therefore, the ozone concentration in the atmosphere in contact with the sulfuric acid-containing liquid on the substrate can be maintained at a sufficiently high level. Therefore, peroxodisulfuric acid can be sufficiently generated in the sulfuric acid-containing liquid on the substrate.

[0032] In another embodiment of the present invention, the gas processing chamber has a plurality of supply hole rows each formed by a plurality of the supply holes, the plurality of supply hole rows being aligned in a predetermined arrangement direction, and the transport unit supports the plurality of substrates so that they are aligned in the arrangement direction, and loads the plurality of substrates into the gas processing chamber so that each substrate is positioned between an adjacent pair of the supply hole rows.

[0033] According to this apparatus, the transport unit loads multiple substrates into the processing space so that each substrate is positioned between the supply hole rows. Therefore, the ozone-containing gas supplied from each supply hole row can be supplied between the substrates. Therefore, sufficient ozone can be supplied to the atmosphere in contact with the sulfuric acid-containing liquid on each substrate, and the ozone can be sufficiently dissolved in the sulfuric acid-containing liquid on each substrate. As a result, uneven removal of organic films between substrates can be reduced.

[0034] In another embodiment of the present invention, the sulfuric acid tank is capable of immersing a plurality of vertically oriented substrates in a sulfuric acid-containing solution, the processing space is capable of accommodating a plurality of horizontally oriented substrates, and the transport unit includes a position switching mechanism that switches the position of the plurality of substrates between the vertical position and the horizontal position.

[0035] This apparatus allows multiple substrates to be immersed in the sulfuric acid-containing liquid in a vertical position. Therefore, multiple substrates can be immersed in the sulfuric acid-containing liquid at approximately the same time. Furthermore, by changing the position of the multiple substrates from a vertical position to a horizontal position using the position switching mechanism of the transport unit and then transporting the multiple substrates to the gas treatment chamber, multiple horizontally oriented substrates can be exposed to the ozone-containing gas. Therefore, unevenness in the thickness of the sulfuric acid-containing liquid at each position on the substrate, which is caused by the sulfuric acid-containing liquid adhering to the vertically oriented substrate moving downward due to its own weight, can be suppressed. Therefore, uneven removal of the organic film at each position on the substrate can be reduced.

[0036] In another embodiment of the present invention, the transport unit includes a transport robot having a lifter that supports a plurality of substrates, and the posture switching mechanism changes the posture of the plurality of substrates between a vertical posture and a horizontal posture by deforming the lifter.

[0037] According to this apparatus, after immersing multiple substrates in a vertical position in a sulfuric acid-containing solution in a sulfuric acid tank, the position of the multiple substrates can be changed from a vertical position to a horizontal position by deforming the lifter of the transfer robot.The multiple substrates in the horizontal position can then be exposed to an ozone-containing gas in a gas treatment chamber.In this way, a single robot can be used to change the position of the multiple substrates and transfer them from the sulfuric acid tank to the gas treatment chamber.Since the transfer of substrates between robots can be omitted, organic films can be quickly removed from the substrates.

[0038] In another embodiment of the present invention, the processing space is disposed directly above the sulfuric acid bath, and the transport unit moves up and down while supporting the plurality of substrates, thereby transporting the plurality of substrates between the gas processing chamber and the sulfuric acid bath.

[0039] According to this device, the transport unit of By moving the substrates up and down while supporting them, multiple substrates are transported between the gas processing chamber and the sulfuric acid tank. Therefore, multiple substrates can be moved from the sulfuric acid tank to the processing space by moving in one direction, i.e., by lifting the multiple substrates from the sulfuric acid tank. Therefore, after the sulfuric acid-containing liquid is attached to the multiple substrates, the multiple substrates can be quickly exposed to the ozone-containing gas. Therefore, organic films can be quickly removed from the substrates.

[0040] In another embodiment of the present invention, the substrate processing apparatus further includes a cover member that separates the interior of the sulfuric acid tank from the processing space and opens and closes the sulfuric acid tank. This prevents ozone-containing gas from dissolving in the sulfuric acid-containing liquid stored in the sulfuric acid tank. This prevents organic films from being removed from the substrates before the supply of ozone-containing gas to the processing space begins in processing the next plurality of substrates. This prevents variations in the duration of the peroxodisulfuric acid processing.

[0041] In another embodiment of the present invention, the transport unit includes a first transport robot that transports multiple substrates in a vertical orientation to the sulfuric acid tank, a second transport robot that transports multiple substrates in a horizontal orientation to the gas processing chamber, and a main transport robot that transports the multiple substrates between the first transport robot and the second transport robot, and the orientation switching mechanism switches the orientation of the multiple substrates being transported by the main transport robot between a horizontal orientation and a vertical orientation.

[0042] With this device, the transport of multiple substrates to the sulfuric acid tank, the transport of multiple substrates to the gas processing chamber, and the change in the orientation of the multiple substrates are each performed by a different robot, which prevents the configuration of each robot from becoming too complicated.

[0043] In another embodiment of the present invention, the second transport robot transports multiple substrates in a horizontal position to the gas processing chamber and rotates the multiple substrates in the gas processing chamber around a vertical axis passing through the centers of the multiple substrates in a horizontal position.

[0044] This apparatus allows multiple substrates to be rotated in a gas processing chamber to remove excess sulfuric acid-containing liquid from the substrates. By removing the sulfuric acid-containing liquid by rotating the substrates, the uniformity of the thickness of the sulfuric acid-containing liquid at each position on the substrate can be improved. This increases the uniformity of the ozone concentration in the sulfuric acid-containing liquid at each position on the substrate. As a result, uneven removal of the organic film at each position on the substrate can be reduced.

[0045] In another embodiment of the present invention, the system further includes a heat treatment chamber for heating a plurality of substrates. The transport unit further includes a third transport robot that transports the plurality of horizontally oriented substrates to the heat treatment chamber and rotates the plurality of horizontally oriented substrates within the heat treatment chamber around a vertical axis passing through the centers of the plurality of horizontally oriented substrates. The main transport robot transports the plurality of substrates between the sulfuric acid bath, the gas treatment chamber, and the heat treatment chamber.

[0046] According to this apparatus, the substrates are rotated in the heat treatment chamber to remove excess sulfuric acid-containing liquid from the substrates, and the thickness of the sulfuric acid-containing liquid at each position on the substrate can be made more uniform by removing the sulfuric acid-containing liquid through the rotation of the substrates.

[0047] Because excess sulfuric acid-containing liquid is removed from the substrates in the heat treatment chamber, multiple substrates can be heated while the sulfuric acid-containing liquid is being removed. By transporting the heated substrates to the gas treatment chamber via the main transport robot and the second transport robot, excess sulfuric acid-containing liquid is removed and the heated substrates can be exposed to the ozone-containing gas. This increases the uniformity of the ozone concentration in the sulfuric acid-containing liquid at each position on the substrate while enhancing the activity of peroxodisulfuric acid. As a result, uneven removal of the organic film at each position on the substrate can be further reduced. [Brief explanation of the drawings]

[0048] [Figure 1] FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus according to one embodiment of the present invention. [Figure 2] FIG. 2 is a schematic elevational view of a main part of the substrate processing apparatus. [Figure 3] FIG. 3 is a cross-sectional view for explaining the configuration of an auxiliary transport robot provided in the substrate processing apparatus. [Figure 4] FIG. 4 is a block diagram for explaining the electrical configuration of the substrate processing apparatus. [Figure 5] FIG. 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus. [Figure 6A] FIG. 6A is a schematic view for explaining the state of the substrate processing apparatus during the substrate processing. [Figure 6B] FIG. 6B is a schematic view for explaining the state of the substrate processing apparatus during the substrate processing. [Figure 6C]FIG. 6C is a schematic view for explaining the state of the substrate processing apparatus during the substrate processing. [Figure 7] FIG. 7 is a view of the side wall of the gas processing chamber viewed from the processing space of the gas processing chamber when the lifter is located at the gas processing position. [Figure 8] FIG. 8 is a flowchart illustrating another example of the substrate processing. [Figure 9] FIG. 9 is an elevational view of a main part of a substrate processing apparatus according to a first modified example of the first embodiment. [Figure 10A] FIG. 10A is a schematic view for explaining the state of the substrate processing apparatus according to the first modified example during substrate processing. [Figure 10B] FIG. 10B is a schematic view for explaining the state of the substrate processing apparatus according to the first modified example during the substrate processing. [Figure 10C] FIG. 10C is a schematic view for explaining the state of the substrate processing apparatus according to the first modified example during the substrate processing. [Figure 11] FIG. 11 is an elevation view of a main part of a substrate processing apparatus according to a second modified example of the first embodiment. [Figure 12A] FIG. 12A is a schematic diagram of a first sub-transport robot provided in a substrate processing apparatus according to a second embodiment, showing a state in which a lifter supports one batch of substrates in a vertical position. [Figure 12B] FIG. 12B is a schematic diagram of the first sub-transport robot provided in the substrate processing apparatus according to the second embodiment, showing a state in which the lifter supports one batch of substrates in a horizontal position. [Figure 13A] FIG. 13A is a schematic view for explaining the state of the substrate processing apparatus according to the second embodiment during substrate processing. [Figure 13B] FIG. 13B is a schematic view for explaining the state of the substrate processing apparatus according to the second embodiment during substrate processing. [Figure 13C] FIG. 13C is a schematic view for explaining the state of the substrate processing apparatus according to the second embodiment during substrate processing. [Figure 14] FIG. 14 is a view of the sidewall of the gas processing chamber viewed from the processing space of the gas processing chamber when the lifter is located at the gas processing position during substrate processing according to the second embodiment. [Figure 15] FIG. 15 is a schematic view for explaining a substrate processing apparatus according to a modified example of the second embodiment. [Figure 16] FIG. 16 is an elevational view of a main part of a substrate processing apparatus according to a third embodiment. [Figure 17A] FIG. 17A is a schematic view of a main transport robot provided in a substrate processing apparatus according to a third embodiment. [Figure 17B] FIG. 17B is a cross-sectional view taken along line XVIIB-XVIIB in FIG. 17A. [Figure 18A] FIG. 18A is a schematic view for explaining the state of the substrate processing apparatus according to the third embodiment during substrate processing. [Figure 18B] FIG. 18B is a schematic view for explaining the state of the substrate processing apparatus according to the third embodiment during substrate processing. [Figure 18C] FIG. 18C is a schematic view for explaining the state of the substrate processing apparatus according to the third embodiment during substrate processing. [Figure 18D] FIG. 18D is a schematic view for explaining the state of the substrate processing apparatus according to the third embodiment during substrate processing. [Figure 18E] FIG. 18E is a schematic view for explaining the state of the substrate processing apparatus according to the third embodiment during substrate processing. [Figure 19] FIG. 19 is an elevation view of a main part of a substrate processing apparatus according to a first modified example of the third embodiment. [Figure 20A] FIG. 20A is a schematic view for explaining the state of the substrate processing apparatus according to the first modified example of the third embodiment during substrate processing. [Figure 20B] FIG. 20B is a schematic view for explaining the state of the substrate processing apparatus according to the first modified example of the third embodiment during substrate processing. [Figure 21]FIG. 21 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus according to the first modified example of the third embodiment. [Figure 22] FIG. 22 is an elevational view of a main part of a substrate processing apparatus according to a second modified example of the third embodiment. [Figure 23] FIG. 23 is a schematic diagram for explaining the configuration of a single-wafer processing unit provided in a substrate processing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0049] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

[0050] <Configuration of the Substrate Processing Apparatus According to the First Embodiment> FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to one embodiment of the present invention.

[0051] The substrate processing apparatus 1 is a batch-type apparatus that collectively processes a plurality of substrates W. The substrate processing apparatus 1 includes a load port LP to which carriers C that accommodate disk-shaped substrates W such as semiconductor wafers are transported, a plurality of processing units 2 that treat the substrates W transported from the load port LP with processing fluid, a transport unit 3 that transports the substrates W between the load port LP and the plurality of processing units 2, and a controller 4 that controls the substrate processing apparatus 1.

[0052] As will be described in detail later, the processing fluid includes a processing liquid and a processing gas. The processing liquid includes a chemical liquid, a rinse liquid, a sulfuric acid-containing liquid, a hydrophilic liquid, etc. The processing gas includes an ozone-containing gas, a replacement gas, a heating gas, etc.

[0053] The processing units 2 include a plurality of batch-type liquid processing units that process the plurality of substrates W with a processing liquid, and a batch-type gas processing unit that processes the plurality of substrates W with a processing gas.

[0054] The plurality of liquid processing units include a sulfuric acid processing unit 5 for processing the plurality of substrates W with a sulfuric acid-containing liquid, a first rinse processing unit 7 for rinsing the plurality of substrates W with a rinse liquid, a chemical liquid processing unit 8 for processing the plurality of substrates W with a chemical liquid, and a second rinse processing unit 9 for rinsing the plurality of substrates W with a rinse liquid. The gas processing unit processes the plurality of substrates W with an ozone-containing gas. In The ozone gas treatment unit 6 treats the ozone gas.

[0055] The sulfuric acid-containing liquid is, for example, an aqueous sulfuric acid solution. The aqueous sulfuric acid solution contains sulfuric acid (H2SO4) and water (H2O). The aqueous sulfuric acid solution is, for example, dilute sulfuric acid or concentrated sulfuric acid. The sulfuric acid-containing liquid may contain substances other than sulfuric acid and water. The sulfuric acid-containing liquid may be formed by mixing sulfuric acid with water such as DIW (deionized water).

[0056] The ozone-containing gas may be ozone gas or a mixed gas of ozone gas and a gas other than ozone gas. The gas other than ozone gas may be, for example, an inert gas. The inert gas contained in the ozone-containing gas may be, for example, nitrogen gas, a rare gas, or a mixed gas thereof. The rare gas may be, for example, argon gas. The replacement gas may be, for example, an inert gas, air, or a mixed gas thereof.

[0057] The rinse liquid is not limited to DIW, but may be DIW, carbonated water, electrolytic ion water, diluted hydrochloric acid water (for example, 1 ppm or more and 100 ppm or less), diluted ammonia water (for example, 1 ppm or more and 100 ppm or less), or reduced water (hydrogen water). Used in The rinse solutions may be different from each other.

[0058] The chemical solution is, for example, an ammonia-hydrogen peroxide mixture (APM solution: Ammonia Hydrogen-peroxide mixture, hydrofluoric acid, etc.

[0059] The substrate W to be processed by the substrate processing apparatus 1 is, for example, a substrate having an organic film such as a resist exposed on its main surface.

[0060] The transport unit 3 includes a carrier transport device 15 that transports carriers C between the load port LP and the processing unit 2 and accommodates multiple carriers C, and a posture switching robot 16 that loads and unloads multiple substrates W into and from the carriers C held by the carrier transport device 15 and switches the posture of the substrates W between a horizontal posture and a vertical posture.

[0061] "Switching the orientation of multiple substrates W between a vertical orientation and a horizontal orientation" means that the orientation of each substrate W can be switched from a vertical orientation to a horizontal orientation, and also that the orientation of each substrate W can be switched from a horizontal orientation to a vertical orientation.

[0062] The horizontal position is a position in which the main surface of the substrate W is a horizontal plane. The vertical position is a position in which the main surface of the substrate W is a vertical plane. The vertical position is also called an upright position.

[0063] The posture switching robot 16 performs a batch assembly operation in which multiple (e.g., 50) substrates W taken out from multiple carriers C form one batch, and a batch release operation in which multiple substrates W included in one batch are placed into multiple carriers C.

[0064] The transport unit 3 further includes a main transport robot 17 that transports a batch of substrates W between the posture switching robot 16 and the multiple processing units 2, and multiple sub-transport robots 18 that transport a batch of substrates W between the main transport robot 17 and the multiple processing units 2.

[0065] The multiple sub-transport robots 18 include a first sub-transport robot 18A that transports a batch of substrates W between the sulfuric acid treatment unit 5, the ozone gas treatment unit 6, and the first rinse treatment unit 7, and a second sub-transport robot 18B that transports multiple substrates W between the chemical liquid treatment unit 8 and the second rinse treatment unit 9.

[0066] The main transport robot 17 receives a batch of substrates W from the posture switching robot 16. The main transport robot 17 passes the batch of substrates W received from the posture switching robot 16 to the first sub-transport robot 18A and the second sub-transport robot 18B, and receives the batch of substrates W supported by the first sub-transport robot 18A and the second sub-transport robot 18B.

[0067] The processing units 2 further include a drying processing unit 10 that dries the substrates W, and a cleaning processing unit 11 that cleans the main transport robot 17. The main transport robot 17 is further capable of transporting one batch of substrates W to the drying processing unit 10.

[0068] The first sub-transport robot 18A transports a batch of substrates W received from the main transport robot 17 between the sulfuric acid treatment unit 5, the ozone gas treatment unit 6, and the first rinse treatment unit 7. Similarly, the second sub-transport robot 18B transports a batch of substrates W received from the main transport robot 17 between the chemical liquid treatment unit 8 and the second rinse treatment unit 9.

[0069] FIG. 2 is a schematic elevational view of the main parts of the substrate processing apparatus 1. As shown in FIG.

[0070] The sulfuric acid treatment unit 5 includes a sulfuric acid tank 20 that stores a sulfuric acid-containing liquid in which one batch of substrates W is immersed, and a sulfuric acid treatment chamber 21 that houses the sulfuric acid tank 20. The sulfuric acid tank 20 is open upward, and the sulfuric acid treatment chamber 21 has an upper end 21a that can be opened and closed.

[0071] The first rinse processing unit 7 includes a rinse liquid tank 30 that stores rinse liquid in which one batch of substrates W is immersed, and a rinse processing chamber 31 that houses the rinse liquid tank 30. The rinse liquid tank 30 is open upward, and the rinse processing chamber 31 has an upper end 31a that can be opened and closed.

[0072] The ozone gas processing unit 6 includes a gas processing chamber 40 for exposing a batch of substrates W to an ozone-containing gas. The gas processing chamber 40 has a processing space 40a capable of accommodating a batch of substrates W, and exposes the batch of substrates W accommodated in the processing space 40a to the ozone-containing gas.

[0073] The ozone gas processing unit 6 includes an ozone supply flow path 41 that supplies an ozone-containing gas to the gas processing chamber 40, an ozone gas valve 42 that opens and closes the ozone supply flow path 41, a replacement gas supply flow path 43 that supplies a replacement gas to the gas processing chamber 40, a replacement gas valve 44 that opens and closes the replacement gas supply flow path 43, an exhaust flow path 45 that exhausts the atmosphere inside the gas processing chamber 40, and an exhaust valve 46 that opens and closes the exhaust flow path 45.

[0074] Although not shown, the ozone gas valve 42 includes a valve body with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator that moves the valve element between an open position and a closed position. The other valves have a similar configuration.

[0075] The ozone supply flow path 41 is formed, for example, by a pipe. The replacement gas supply flow path 43 is formed, for example, by a pipe. The exhaust flow path 45 is formed, for example, by a pipe.

[0076] The ozone gas processing unit 6 includes an ozone flow path heater 47 that heats the ozone-containing gas in the ozone supply flow path 41. The ozone gas processing unit 6 may also include an ozone treatment chamber heater (not shown) that heats the gas treatment chamber 40. The ozone flow path heater 47 and the ozone treatment chamber heater are examples of ozone heating units that heat at least one of the ozone-containing gas in the ozone supply flow path 41 and the ozone-containing gas in the gas treatment chamber 40.

[0077] The gas processing chamber 40 has a wall 48 that defines a processing space 40a. The wall 48 has an openable and closable upper wall 48u, a bottom wall 48b, and a side wall 48s that connects the upper wall 48u and the bottom wall 48b. The upper wall 48u is openable and closable. The side wall 48s has a polygonal or arc shape in a plan view.

[0078] The gas processing chamber 40 has a plurality of supply holes 49A opening in the sidewall 48s and supplying the ozone-containing gas supplied from the ozone supply passage 41 to the processing space 40a, and a plurality of exhaust holes 49B opening in the sidewall 48s and exhausting the atmosphere in the processing space 40a. The plurality of supply holes 49A are provided in the sidewall 48s at positions facing the plurality of exhaust holes 49B. The plurality of supply holes 49A can also supply the replacement gas supplied from the replacement gas supply passage 43 to the processing space 40a. The number of supply holes 49A is the same as the number of exhaust holes 49B. The supply holes 49A and the exhaust holes 49B are both, for example, circular holes (see FIG. 7, described later).

[0079] The first sub-transport robot 18A transports a batch of substrates W in a vertical position. The first sub-transport robot 18A can transport the batch of substrates W to the sulfuric acid tank 20 of the sulfuric acid treatment unit 5 and immerse the batch of substrates W in a vertical position in the sulfuric acid-containing liquid in the sulfuric acid tank 20. The first sub-transport robot 18A can transport the batch of substrates W to the gas treatment chamber 40 of the ozone gas treatment unit 6 and place the batch of substrates W in a vertical position in the treatment space 40a of the gas treatment chamber 40. The first sub-transport robot 18A can transport the batch of substrates W to the rinse liquid tank 30 of the first rinse treatment unit 7 and immerse the batch of substrates W in a vertical position in the rinse liquid in the rinse liquid tank 30.

[0080] <Configuration of the first sub-transport robot> FIG. 3 is a cross-sectional view illustrating the configuration of the first sub-transport robot 18A provided in the substrate processing apparatus 1. As shown in FIG.

[0081] The first sub-transport robot 18A includes a lifter 50 that supports one batch of substrates W, a lifting mechanism 51 that raises and lowers the lifter 50, and a slide mechanism 52 that moves (slides) the lifter 50 horizontally.

[0082] The lifting mechanism 51 includes a lifting actuator (not shown) that generates a driving force for lifting the lifter 50. The lifting actuator is, for example, an electric motor or an air cylinder. The lifting mechanism 51 may also include a power transmission mechanism (not shown) that transmits the driving force of the lifting actuator to the lifter 50. Power Transmission The mechanism includes, for example, at least one of a ball screw mechanism and a rack and pinion mechanism.

[0083] The slide mechanism 52 includes a slide actuator (not shown) that generates a driving force to move the lifter 50 in the horizontal direction. The slide actuator is, for example, an electric motor or an air cylinder. The slide mechanism 52 may also include a power transmission mechanism (not shown) that transmits the driving force of the slide actuator to the lifter 50.

[0084] The lifter 50 is not particularly limited, but may have the following configuration, for example: The lifter 50 includes a plurality of (e.g., three) support portions 53 (see also FIG. 2) that support one batch of substrates W from below, and a connecting portion 54 that is connected to one end of the plurality of support portions 53.

[0085] Each support portion 53 has support grooves 55 in the same number as the substrates W. Of the three support portions 53, only the support grooves 55 of the central support portion 53 are shown in Figure 3. In each support portion 53, the multiple support grooves 55 are provided at equal intervals along the arrangement direction (horizontal direction) of one batch of substrates W. The peripheral portion of each substrate W is accommodated in multiple support grooves 55 located at the same position in the arrangement direction. Therefore, the lifter 50 can raise and lower one batch of substrates W while maintaining the orientation of the substrates W in the vertical orientation.

[0086] 2, the lifter 50 of the first sub-transport robot 18A can move horizontally above the gas treatment chamber 40, the sulfuric acid treatment chamber 21, and the rinse treatment chamber 31. The lifter 50 of the first sub-transport robot 18A can move horizontally by a slide mechanism 52 between a first upper position located directly above the sulfuric acid treatment chamber 21, a second upper position located directly above the gas treatment chamber 40, and a third upper position located directly above the rinse treatment chamber 31.

[0087] The lifter 50 of the first sub-transport robot 18A can be raised and lowered by the lifting mechanism 51 between a sulfuric acid treatment position, where one batch of substrates W is immersed in a sulfuric acid-containing liquid in the sulfuric acid tank 20, and a first upper position. The lifter 50 of the first sub-transport robot 18A can be raised and lowered by the lifting mechanism 51 between a gas treatment position, where one batch of substrates W is accommodated in the treatment space 40a, and a second upper position. The lifter 50 of the first sub-transport robot 18A can be raised and lowered by the lifting mechanism 51 between a rinse treatment position, where one batch of substrates W is immersed in a rinse liquid in a rinse liquid tank 30, and a third upper position.

[0088] The sulfuric acid treatment position is a position where the upper end of the vertically oriented substrate W is located below the liquid level of the sulfuric acid-containing liquid in the sulfuric acid tank 20. The rinse treatment position is a position where the upper end of the vertically oriented substrate W is located below the liquid level of the rinse liquid in the rinse liquid tank 30.

[0089] <Electrical configuration of the substrate processing apparatus> FIG. 4 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1. As shown in FIG.

[0090] The controller 4 includes a microcomputer and controls, in accordance with a predetermined program, the control targets provided in the substrate processing apparatus 1. More specifically, the controller 4 includes a processor (CPU) 4A and a memory 4B storing a program, and is configured to perform various control processes for substrate processing by the processor 4A executing the program.

[0091] In particular, the controller 4 controls the operations of the carrier transport device 15, the posture switching robot 16, the main transport robot 17, the multiple sub-transport robots 18, the multiple processing units 2, etc. The valves and heaters provided in each processing unit 2 are controlled by the controller 4.

[0092] <Example of substrate processing> Fig. 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1. Figs. 6A to 6C are schematic views illustrating the state of the substrate processing apparatus 1 during substrate processing.

[0093] In the substrate processing by the substrate processing apparatus 1, for example, a sulfuric acid immersion step (step S1), an ozone exposure step (step S2), a rinsing step (step S3), and a drying step (step S4) are performed, as shown in Fig. 5. Details of the substrate processing will be described below mainly with reference to Fig. 1, Fig. 2, and Fig. 5. Fig. 6A to Fig. 6C will also be referenced as appropriate.

[0094] The main transport robot 17 receives a batch of substrates W consisting of a plurality of substrates W from the posture switching robot 16. The main transport robot 17 passes the batch of substrates W received from the posture switching robot 16 to the first sub-transport robot 18A. The batch of substrates W is supported by a lifter 50 of the first sub-transport robot 18A.

[0095] After the first sub-transport robot 18A receives the batch of substrates W from the main transport robot 17, the lifter 50 moves to the first upper position (the position indicated by the two-dot chain line in FIG. 6A). The lifter 50 may receive the batch of substrates W from the main transport robot 17 when it is located at the first upper position.

[0096] The lifter 50, while supporting the batch of substrates W in a vertical position, moves down from the first upper position (the position indicated by the two-dot chain line in FIG. 6A) to the sulfuric acid treatment position (the position indicated by the solid line in FIG. 6A). As a result, as shown in FIG. 6A, the batch of substrates W in a vertical position is immersed in the sulfuric acid-containing liquid in the sulfuric acid tank 20 (sulfuric acid immersion step: step S1).

[0097] Thereafter, the lifter 50 rises to the first upper position, thereby removing the batch of substrates W from the sulfuric acid-containing liquid in the sulfuric acid tank 20. The lifter 50 moves to the second upper position (the position indicated by the two-dot chain line in FIG. 6B) via the first upper position. The lifter 50 then descends from the second upper position to the gas processing position (the position indicated by the solid line in FIG. 6B). In this manner, a first transfer step (transfer step) is performed in which the batch of substrates W is removed from the sulfuric acid tank 20 and transferred to the gas processing chamber 40.

[0098] With the lifter 50 positioned at the gas processing position, the ozone gas valve 42 and the exhaust valve 46 are opened. This causes the atmosphere in the processing space 40a of the gas processing chamber 40 to be exhausted, and an ozone-containing gas is supplied to the processing space 40a. By supplying the ozone-containing gas to the processing space 40a, one batch of substrates W having the sulfuric acid-containing liquid adhering thereto are exposed to the ozone-containing gas (ozone exposure step: step S2, vertical exposure step).

[0099] When the substrate W having the sulfuric acid-containing liquid attached thereto is exposed to the ozone-containing gas, the ozone in the ozone-containing gas dissolves in the sulfuric acid-containing liquid, generating peroxodisulfuric acid in the sulfuric acid-containing liquid. The peroxodisulfuric acid can dissolve the organic film exposed from the substrate W into the sulfuric acid-containing liquid. In some cases, the organic film is not completely dissolved in the sulfuric acid-containing liquid and is peeled off from the top surface of the substrate W.

[0100] By supplying the ozone-containing gas to the processing space 40a, the atmosphere in the processing space 40a is replaced with the ozone-containing gas, and the processing space 40a is preferably filled with the ozone-containing gas (ozone-containing gas filling step). If the processing space 40a is filled with the ozone-containing gas, peroxodisulfuric acid can be generated quickly and sufficiently in the sulfuric acid-containing liquid.

[0101] The temperature of the ozone-containing gas is preferably, for example, in the range of 50° C. to 270° C. The temperature of the ozone-containing gas is preferably in the range of 50° C. to 270° C., and more preferably in the range of 80° C. to 170° C. This increases the activity of peroxodisulfuric acid, allowing the organic film to be removed quickly.

[0102] 7, in the gas processing chamber 40, a plurality of supply hole rows 49AL, each consisting of a plurality of supply holes 49A, are arranged in a first arrangement direction D1 (horizontal direction). A batch of substrates W supported by the lifter 50 are arranged in the horizontal direction. The arrangement pitch P1 of the batch of substrates W matches the arrangement pitch P2 of the plurality of supply hole rows 49AL. When the lifter 50 is positioned at the gas processing position while supporting a batch of substrates W in a vertical position, the substrates W are positioned between the supply hole rows 49AL.

[0103] For ease of explanation, in FIG. 7, the supply hole is denoted by the symbol "49A" and the exhaust hole is denoted by the symbol "49B." In the gas processing chamber 40, a plurality of exhaust hole rows 49BL, each of which is composed of a plurality of exhaust holes 49B, are also arranged in the first arrangement direction D1 (horizontal direction) at the same arrangement pitch P2 as the plurality of supply hole rows 49AL. Vertical When the gas processing unit 49 is positioned at the gas processing position while supporting a batch of substrates W in the specified posture, the substrates W are positioned between the exhaust hole rows 49BL.

[0104] Thereafter, the lifter 50 moves up to the second upper position, thereby removing the batch of substrates W from the gas processing chamber 40. The lifter 50 moves to the third upper position (the position indicated by the two-dot chain line in FIG. 6C) via the second upper position. The lifter 50 then moves down from the third upper position to the rinse processing position (the position indicated by the solid line in FIG. 6C). As a result, as shown in FIG. 6C, the batch of substrates W is immersed in the rinse liquid in the rinse liquid tank 30 (rinsing step: step S3). In this way, the second transfer step is performed in which the batch of substrates W is removed from the gas processing chamber 40 and transferred to the rinse liquid tank 30.

[0105] One batch of substrates W is rinsed by being immersed in the rinse liquid in the rinse liquid tank 30. More specifically, the sulfuric acid-containing liquid in which the organic film has been dissolved and the organic film peeled off from the substrates W are removed from the substrates W.

[0106] After one batch of substrates W is removed from the gas processing chamber 40, the ozone gas valve 42 is closed and the replacement gas valve 44 is opened instead. This allows replacement gas to be supplied to the processing space 40a of the gas processing chamber 40, and the atmosphere in the processing space 40a is replaced with the replacement gas. This removes the ozone-containing gas from the processing space 40a (ozone removal process).

[0107] Thereafter, the lifter 50 moves up to the third upper position, thereby removing the batch of substrates W from the rinse liquid in the rinse liquid tank 30. With the lifter 50 located at the third upper position, the first sub-transport robot 18A delivers the batch of substrates W to the main transport robot 17. The main transport robot 17 transports the batch of substrates W received from the first sub-transport robot 18A to the drying processing unit 10.

[0108] In the drying processing unit 10, the batch of substrates W is dried by a method such as reduced pressure drying (drying step: step S4). Thereafter, the main transport robot 17 passes the batch of substrates W to the posture switching robot 16. The posture switching robot 16 changes the posture of the batch of substrates W received from the main transport robot 17 from a vertical posture to a horizontal posture, and then stores the batch of substrates W in a plurality of carriers C held by the carrier transport device 15. By repeating this series of operations, the plurality of substrates W transported to the substrate processing apparatus 1 are processed.

[0109] According to the first embodiment, a batch of substrates W can be immersed in the sulfuric acid-containing liquid in a vertical position. Therefore, multiple substrates W can be immersed in the sulfuric acid-containing liquid at approximately the same time. The batch of substrates W immersed in the sulfuric acid-containing liquid at the same time is exposed to an ozone-containing gas by the ozone gas treatment unit 6. This allows ozone in the ozone-containing gas to be dissolved in the sulfuric acid-containing liquid adhering to the batch of substrates W removed from the sulfuric acid-containing liquid, thereby generating peroxodisulfuric acid in the sulfuric acid-containing liquid. As a result, organic films can be quickly and thoroughly removed from the main surfaces of the batch of substrates W.

[0110] Furthermore, according to the first embodiment, a batch of substrates W taken out from the sulfuric acid tank 20 is placed in the processing space 40a of the gas processing chamber 40. Therefore, the batch of substrates W can be exposed to the ozone-containing gas almost simultaneously. Therefore, organic films can be removed from the main surfaces of the batch of substrates W more quickly and thoroughly.

[0111] According to the first embodiment, an ozone-containing gas is supplied to the processing space 40a through the plurality of supply holes 49A and the processing space 40a is evacuated through the plurality of exhaust holes 49B, thereby exposing one batch of substrates W to the ozone-containing gas. Therefore, even if the ozone in the atmosphere in contact with the sulfuric acid-containing liquid on the substrates W is consumed by dissolving in the sulfuric acid-containing liquid, the ozone-containing gas supplied to the processing space 40a supplies ozone to the atmosphere in contact with the sulfuric acid-containing liquid adhering to the substrates W. Therefore, the ozone concentration in the atmosphere in contact with the sulfuric acid-containing liquid on the substrates W can be maintained at a sufficiently high level. Therefore, peroxodisulfuric acid can be generated in the sulfuric acid-containing liquid on the substrates W.

[0112] In the gas processing chamber 40, a plurality of supply hole rows 49AL are aligned in the first arrangement direction D1. The substrates W in one batch are supported by the lifter 50 so as to be aligned in the first arrangement direction D1. The substrates W in one batch are arranged in the processing space 40a so that each substrate W is positioned between two adjacent supply hole rows 49AL. This allows the ozone-containing gas from each supply hole row 49AL to be supplied between the substrates W. This allows a sufficient amount of ozone to be supplied to the atmosphere in contact with the sulfuric acid-containing liquid on each substrate W, allowing the ozone to be sufficiently dissolved in the sulfuric acid-containing liquid on each substrate W. As a result, uneven removal of organic films between substrates W can be reduced.

[0113] Before the sulfuric acid immersion step (step S1), a batch of substrates W can be hydrophilized by loading the batch of substrates W into the gas processing chamber 40 and exposing the batch of substrates W to an ozone-containing gas. That is, as in the substrate processing shown in FIG. 8, a hydrophilization step (step S5) may be performed before the sulfuric acid immersion step (step S1). In this substrate processing, the batch of substrates W is exposed to an ozone-containing gas before and after being immersed in the sulfuric acid-containing liquid. By performing the substrate processing shown in FIG. 8, the batch of substrates W is hydrophilized before being immersed in the sulfuric acid-containing liquid.

[0114] This improves the wettability of the substrate W, making it easier for the sulfuric acid-containing liquid to adhere to the substrate W. This allows the sulfuric acid-containing liquid to be spread thinly over the entire main surface of the substrate W. This makes it easier for ozone to reach the main surface of the substrate W in the ozone exposure step, allowing the organic film to be removed from the main surface of the substrate W quickly and sufficiently.

[0115] <First Modification of First Embodiment> Next, a first modified example of the substrate processing apparatus 1 will be described.

[0116] FIG. 9 is an elevational view of a main part of a substrate processing apparatus 1 according to a first modified example of the first embodiment.

[0117] In the first modified example, the sulfuric acid treatment chamber 21 is not provided, and the sulfuric acid tank 20 is disposed in the gas treatment chamber 40. The treatment space 40a of the gas treatment chamber 40 is disposed directly above the sulfuric acid tank 20.

[0118] The first sub-transport robot 18A moves up and down while supporting a plurality of substrates W. Processing space 40a and the sulfuric acid tank 20. The sulfuric acid treatment unit 5 does not have a sulfuric acid treatment chamber 21, but includes a lid member 22 that separates the interior of the sulfuric acid tank 20 from the treatment space 40a and opens and closes the sulfuric acid tank 20. In the first modified example, the treatment space 40a is partitioned by a side wall portion 48s, an upper wall portion 48u, and the lid member 22. The lid member 22 is driven by a lid drive mechanism (not shown) such as a motor to open and close the sulfuric acid tank 20.

[0119] The lifter 50 of the first sub-transport robot 18A can move horizontally above the gas processing chamber 40 and the rinsing processing chamber 31. The lifter 50 can move horizontally between a second upper position located directly above the gas processing chamber 40 and a third upper position located directly above the rinsing processing chamber 31 by a slide mechanism 52. The lifter 50 can be raised and lowered between the sulfuric acid processing position, the gas processing position, and the second upper position by an elevation mechanism 51. The lifter 50 can be raised and lowered between the rinsing processing position and the third upper position by the elevation mechanism 51.

[0120] 10A to 10C are schematic views for explaining the state of the substrate processing apparatus 1 according to the first modified example during substrate processing.

[0121] The substrate processing apparatus 1 according to the first modified example can perform the substrate processing shown in Fig. 5. The following description will focus on the differences between the substrate processing by the substrate processing apparatus 1 according to the first modified example and the substrate processing shown in Figs. 6A to 6C.

[0122] In substrate processing according to the first modified example, the lifter 50 receives a batch of substrates W from the main transport robot 17 and then moves to the second upper position (the position indicated by the two-dot chain line in FIG. 10A). The lifter 50, while supporting the batch of substrates W, descends toward the sulfuric acid treatment position (the position indicated by the solid line in FIG. 10A). As a result, as shown in FIG. 10A, the batch of substrates W is immersed in the sulfuric acid-containing liquid in the sulfuric acid tank 20 (sulfuric acid immersion step: step S1 shown in FIG. 5). The lid member 22 is opened before the lifter 50 enters the sulfuric acid tank 20.

[0123] Thereafter, the lifter 50 is raised, thereby removing the batch of substrates W from the sulfuric acid-containing liquid in the sulfuric acid tank 20. The lifter 50 is raised from the sulfuric acid treatment position (the position shown by the two-dot chain line in FIG. 10B) and moved to the gas treatment position (the position shown by the solid line in FIG. 10B). In this way, the batch of substrates W is lifted from the sulfuric acid tank 20, and thereby the batch of substrates W is placed in the treatment space 40a (first transfer step). After the lifter 50 is retracted from the sulfuric acid tank 20, the lid member 22 is closed.

[0124] With the lifter 50 positioned at the gas processing position, the ozone gas valve 42 and the exhaust valve 46 are opened. This causes the atmosphere in the processing space 40a of the gas processing chamber 40 to be exhausted, and an ozone-containing gas is supplied to the processing space 40a. Therefore, by supplying the ozone-containing gas to the processing space 40a, one batch of substrates W having the sulfuric acid-containing liquid adhering thereto are exposed to the ozone-containing gas (ozone exposure step: step S2 shown in FIG. 5).

[0125] When the substrates W having the sulfuric acid-containing liquid adhering thereto are exposed to the ozone-containing gas, the ozone in the ozone-containing gas dissolves in the sulfuric acid-containing liquid adhering to the substrates W. This allows peroxodisulfuric acid to be generated in the sulfuric acid-containing liquid adhering to one batch of substrates W. The peroxodisulfuric acid can dissolve organic films exposed from the substrates W into the sulfuric acid-containing liquid. In some cases, the organic films are not completely dissolved in the sulfuric acid-containing liquid and are peeled off from the top surfaces of the substrates W.

[0126] By supplying the ozone-containing gas to the processing space 40a, the atmosphere in the processing space 40a is preferably replaced with the ozone-containing gas, and the processing space 40a is preferably filled with the ozone-containing gas (ozone-containing gas filling step). Also in the first modified example, when the lifter 50 is located at the gas processing position, the substrate W is located between the supply hole rows 49AL (see FIG. 7).

[0127] Thereafter, the lifter 50 moves up to the second upper position, thereby removing the batch of substrates W from the gas processing chamber 40. The lifter 50 moves to the third upper position (the position indicated by the two-dot chain line in FIG. 10C) via the second upper position. The lifter 50 then moves down from the third upper position to the rinse processing position (the position indicated by the solid line in FIG. 10C). As a result, as shown in FIG. 10C, the batch of substrates W is immersed in the rinse liquid in the rinse liquid tank 30 (rinse step: step S3 shown in FIG. 5). In this way, the second transfer step is performed in which the batch of substrates W is removed from the gas processing chamber 40 and transferred to the rinse liquid tank 30.

[0128] One batch of substrates W is rinsed by being immersed in the rinse liquid in the rinse liquid tank 30. More specifically, the sulfuric acid-containing liquid in which the organic film has been dissolved and the organic film peeled off from the substrates W are removed from the substrates W.

[0129] After one batch of substrates W is removed from the gas processing chamber 40, the ozone gas valve 42 is closed and the replacement gas valve 44 is opened instead. This allows replacement gas to be supplied to the processing space 40a of the gas processing chamber 40, and the atmosphere in the processing space 40a is replaced with the replacement gas. This removes the ozone-containing gas from the processing space 40a.

[0130] Thereafter, a drying step (step S4) is carried out in the same manner as in the substrate processing shown in FIGS. 6A to 6C.

[0131] According to the first modification of the first embodiment, the batch of substrates W can be moved from the sulfuric acid tank 20 to the processing space 40a by unidirectional movement, i.e., by lifting the batch of substrates W from the sulfuric acid tank 20. Therefore, after the sulfuric acid-containing liquid is adhered to the batch of substrates W, the batch of substrates W can be quickly exposed to the ozone-containing gas. Therefore, organic films can be quickly removed from the main surfaces of the batch of substrates W.

[0132] The interior of the sulfuric acid tank 20 and the processing space 40a are separated by a lid member 22 that opens and closes the sulfuric acid tank 20. This prevents the ozone-containing gas from dissolving in the sulfuric acid-containing liquid stored in the sulfuric acid tank 20. This prevents the organic film from being removed from the substrates W before the supply of the ozone-containing gas to the processing space 40a is started in the substrate processing of the next batch of substrates W. This prevents the variation in the duration of the processing with peroxodisulfuric acid from batch to batch.

[0133] <Second Modification of First Embodiment> Next, a second modified example of the substrate processing apparatus 1 will be described.

[0134] FIG. 11 is an elevational view of a main part of a substrate processing apparatus 1 according to a second modified example of the first embodiment.

[0135] In the second modified example, the substrate processing apparatus 1 further includes a hydrophilic processing unit 12 that processes a batch of substrates W with a hydrophilic liquid. The hydrophilic liquid is, for example, ozone water.

[0136] The hydrophilic treatment unit 12 includes a hydrophilic liquid tank 60 that stores a hydrophilic liquid in which one batch of substrates W is immersed, and a hydrophilic treatment chamber 61 that houses the hydrophilic liquid tank 60. The hydrophilic liquid tank 60 is open upward, and the hydrophilic treatment chamber 61 has an upper end 61a that can be opened and closed.

[0137] The lifter 50 of the first sub-transport robot 18A can move horizontally above the gas treatment chamber 40, the sulfuric acid treatment chamber 21, the rinse treatment chamber 31, and the hydrophilic treatment chamber 61. The lifter 50 can be moved by a slide mechanism 52 to a first upper position, a second upper position, a third upper position, and a fourth upper position located directly above the hydrophilic treatment chamber 61.

[0138] The substrate processing apparatus 1 according to the second modified example can perform the substrate processing shown in Fig. 5. The substrate processing apparatus 1 according to the second modified example can also perform the substrate processing shown in Fig. 8.

[0139] 8, after the first sub-transport robot 18A receives a batch of substrates W from the main transport robot 17, the lifter 50 moves to the fourth upper position. The lifter 50, while supporting the batch of substrates W, moves down toward the hydrophilic treatment position. As a result, the batch of substrates W is immersed in the hydrophilic liquid in the hydrophilic liquid tank 60. can (Hydrophilicity process: step S5).

[0140] Thereafter, one batch of substrates W is taken out from the hydrophilization liquid bath 60, and the sulfuric acid immersion step (step S1) to the drying step (step S4) are carried out in the same manner as in the substrate processing shown in FIGS. 6A to 6C.

[0141] According to the second modification of the first embodiment, one batch of substrates W can be hydrophilized before being immersed in the sulfuric acid-containing liquid. This improves the wettability of the substrates W, making it easier for the sulfuric acid-containing liquid to adhere to the substrates W. This allows the sulfuric acid-containing liquid to be spread thinly over the entire main surface of the substrates W. This makes it easier for ozone to reach the main surface of the substrates W in the ozone exposure step, allowing organic films to be removed from the substrates quickly and thoroughly.

[0142] <Configuration of Substrate Processing Apparatus According to Second Embodiment> Next, the configuration of a substrate processing apparatus 1A according to a second embodiment will be described. Figures 12A and 12B are schematic diagrams of a first sub-transport robot 18A provided in the substrate processing apparatus 1A according to the second embodiment. In Figures 12A and 12B, components equivalent to those shown in Figures 1 to 11 described above are given the same reference numerals as in Figure 1, etc., and descriptions thereof will be omitted. The same applies to Figures 13A to 15 described below.

[0143] The main difference between the substrate processing apparatus 1A according to the second embodiment and the substrate processing apparatus 1 according to the first embodiment is that the lifter 50 of the first sub-transport robot 18A can change the posture of a batch of substrates W between a vertical posture and a horizontal posture by deforming.

[0144] The lifter 50 of the first sub-transport robot 18A according to the second embodiment includes a clamping section 56 that clamps and supports the periphery of one batch of substrates W, a rotating support shaft 57 that rotates the clamping section 56, and a connecting section 58 that is connected to the clamping section 56 via the rotating support shaft 57 and transmits the power of the lifting mechanism 51 and the slide mechanism 52.

[0145] The first sub-transport robot 18A includes a posture switching mechanism 70 that switches the posture of one batch of substrates W between a vertical posture and a horizontal posture. The posture switching mechanism 70 deforms the lifter 50 by rotating the clamping unit 56 around the rotation support shaft 57. Fig. 12A shows a first supporting state in which the lifter 50 supports one batch of substrates W in a vertical posture, and Fig. 12B shows a second supporting state in which the lifter 50 supports one batch of substrates W in a horizontal posture.

[0146] The attitude switching mechanism 70 includes, for example, an actuator such as an electric motor that rotates the rotary support shaft 57 around its central axis A1.

[0147] <Example of Substrate Processing According to Second Embodiment> 13A to 13C are schematic views for explaining the state of the substrate processing apparatus 1A according to the second embodiment during substrate processing.

[0148] The substrate processing apparatus 1A according to the second embodiment can perform the substrate processing shown in Fig. 5. The following description will focus on the differences between the substrate processing by the substrate processing apparatus 1A and the substrate processing shown in Figs. 6A to 6C.

[0149] After the first sub-transport robot 18A receives the batch of substrates W from the main transport robot 17, the lifter 50 moves to the first upper position (the position indicated by the two-dot chain line in FIG. 13A). The first sub-transport robot 18A may receive the batch of substrates W from the main transport robot 17 when the lifter 50 is located at the first upper position.

[0150] The lifter 50, in the first supporting state, descends from the first upper position toward the sulfuric acid treatment position (the position indicated by the solid line in FIG. 13A), whereby, as shown in FIG. 13A, one batch of substrates W in a vertical position is immersed in the sulfuric acid-containing liquid in the sulfuric acid tank 20 in a vertical position (sulfuric acid immersion step: step S1 shown in FIG. 5).

[0151] The lifter 50 then rises to the first upper position, thereby removing the batch of substrates W from the sulfuric acid-containing liquid in the sulfuric acid tank 20. The lifter 50 moves through the first upper position to the second upper position (the position indicated by the two-dot chain line in FIG. 13B). Then, the posture switching mechanism 70 changes the state of the lifter 50 from the first supporting state to the second supporting state. This changes the posture of the batch of substrates W from the vertical posture to the horizontal posture (first posture changing step).

[0152] Then, the lifter 50 descends from the second upper position toward the gas processing position (the position indicated by the solid line in FIG. 13B) and is placed at the gas processing position. With the lifter 50 positioned at the gas processing position, the ozone gas valve 42 and the exhaust valve 46 are opened. This causes the atmosphere in the processing space 40a of the gas processing chamber 40 to be exhausted, and an ozone-containing gas is supplied to the processing space 40a. By supplying the ozone-containing gas to the processing space 40a, one batch of substrates W in a horizontal position and having the sulfuric acid-containing liquid adhering thereto is exposed to the ozone-containing gas (ozone exposure step: step S2 shown in FIG. 5, horizontal exposure step).

[0153] The first attitude change step may be performed after the lifter 50 is placed at the gas processing position and before the supply of the ozone-containing gas to the processing space 40a is started.

[0154] By supplying the ozone-containing gas to the processing space 40a, the atmosphere in the processing space 40a is replaced with the ozone-containing gas, and the processing space 40a is preferably filled with the ozone-containing gas (ozone-containing gas filling step). If the processing space 40a is filled with the ozone-containing gas, peroxodisulfuric acid can be generated quickly and sufficiently in the sulfuric acid-containing liquid.

[0155] 14, in the gas processing chamber 40, a plurality of supply hole rows 49AL, each consisting of a plurality of supply holes 49A, are arranged in the second arrangement direction D2 (vertical direction). The batch of substrates W supported by the lifter 50 are arranged in the vertical direction. When the lifter 50 is positioned at the gas processing position while supporting the batch of substrates W in a horizontal position, the substrates W are positioned between the supply hole rows 49AL.

[0156] 14, for ease of explanation, the supply hole is denoted by the reference symbol "49A" and the exhaust hole is denoted by the reference symbol "49B." In the gas processing chamber 40, a plurality of exhaust hole rows 49BL, each consisting of a plurality of exhaust holes 49B, are also arranged in the second arrangement direction D2 (vertical direction). When the lifter 50 is positioned at the gas processing position while supporting a batch of substrates W in a horizontal position, the substrates W are positioned between the exhaust hole rows 49BL.

[0157] The lifter 50 then rises to the second upper position, thereby removing the batch of substrates W from the gas processing chamber 40. The lifter 50 moves to the third upper position (the position indicated by the two-dot chain line in FIG. 13C) via the second upper position. Then, the posture switching mechanism 70 changes the state of the lifter 50 from the second supporting state to the first supporting state. This changes the posture of the batch of substrates W from the horizontal posture to the vertical posture (second posture changing step).

[0158] Then, the lifter 50 descends from the third upper position toward the rinsing processing position (the position indicated by the solid line in FIG. 13C). As a result, as shown in FIG. 13C, the batch of substrates W in the vertical position is immersed in the rinsing liquid in the rinsing liquid tank 30 (rinsing step: step S3). In this way, a second transfer step is performed in which the batch of substrates W is removed from the gas processing chamber 40 and transferred to the rinsing liquid tank 30.

[0159] One batch of substrates W is rinsed by being immersed in the rinse liquid in the rinse liquid tank 30. More specifically, the sulfuric acid-containing liquid in which the organic film has been dissolved and the organic film peeled off from the substrates W are removed from the substrates W.

[0160] After one batch of substrates W is removed from the gas processing chamber 40, the ozone gas valve 42 is closed and the replacement gas valve 44 is opened instead. This allows replacement gas to be supplied to the processing space 40a of the gas processing chamber 40, and the atmosphere in the processing space 40a is replaced with the replacement gas. This removes the ozone-containing gas from the processing space 40a (ozone removal process).

[0161] Thereafter, the first sub-transport robot 18A transfers the batch of substrates W to the main transport robot 17. The main transport robot 17 transports the batch of substrates W received from the first sub-transport robot 18A to the drying processing unit 10. Thereafter, the batch of substrates W is dried and finally accommodated in a plurality of carriers C.

[0162] According to the second embodiment, a batch of substrates W can be immersed in the sulfuric acid-containing liquid in a vertical position. Therefore, the batch of substrates W can be immersed in the sulfuric acid-containing liquid at approximately the same time. By placing the batch of substrates W removed from the sulfuric acid tank 20 in the processing space 40a, the batch of substrates W can be exposed to the ozone-containing gas at the same time. Therefore, the organic film can be removed from the substrates W more quickly and thoroughly.

[0163] Furthermore, the orientation of the substrates W in one batch is changed from a vertical orientation to a horizontal orientation before being exposed to the ozone-containing gas. This makes it possible to suppress unevenness in the thickness of the sulfuric acid-containing liquid at each position on the substrate W, which is caused by the sulfuric acid-containing liquid on the substrate W moving downward due to its own weight. This makes it possible to reduce uneven removal of the organic film at each position on the main surface of the substrate W.

[0164] According to the second embodiment, the attitude switching mechanism 70 changes the attitude of one batch of substrates W between the vertical attitude and the horizontal attitude by deforming the lifter 50.

[0165] Therefore, after immersing a batch of substrates W in a vertical position in the sulfuric acid-containing liquid in the sulfuric acid tank 20, the lifter 50 of the first sub-transport robot 18A (transport robot) can be deformed to change the position of the batch of substrates W from a vertical position to a horizontal position. Then, the batch of substrates W in a horizontal position can be exposed to an ozone-containing gas in the gas treatment chamber 40. In this way, a single robot (first sub-transport robot 18A) can be used to change the position of the batch of substrates W and transport the batch of substrates W from the sulfuric acid tank 20 to the gas treatment chamber 40. Since the need to transfer the substrates W between robots can be eliminated, organic films can be quickly removed from the substrates W.

[0166] According to the second embodiment, an ozone-containing gas is supplied to the processing space 40a through the plurality of supply holes 49A and the processing space 40a is evacuated through the plurality of exhaust holes 49B, thereby exposing one batch of substrates W to the ozone-containing gas. Therefore, even if the ozone in the atmosphere in contact with the sulfuric acid-containing liquid on the substrates W is consumed by dissolving in the sulfuric acid-containing liquid, the ozone-containing gas supplied to the processing space 40a supplies ozone to the atmosphere in contact with the sulfuric acid-containing liquid adhering to the substrates W. Therefore, the ozone concentration in the atmosphere in contact with the sulfuric acid-containing liquid on the substrates W can be maintained at a sufficiently high level. Therefore, peroxodisulfuric acid can be generated in the sulfuric acid-containing liquid on the substrates W.

[0167] In the gas processing chamber 40, a plurality of supply hole rows 49AL are aligned in the second arrangement direction D2. A batch of substrates W is supported by a lifter 50 so as to be aligned in the second arrangement direction D2. The batch of substrates W is arranged in the processing space 40a so that each substrate W is positioned between two adjacent supply hole rows 49AL. This allows the ozone-containing gas from each supply hole row 49AL to be supplied between the substrates W. This allows a sufficient amount of ozone to be supplied to the atmosphere in contact with the sulfuric acid-containing liquid on each substrate W, allowing the ozone to be sufficiently dissolved in the sulfuric acid-containing liquid on each substrate W. As a result, uneven removal of organic films between substrates W can be reduced.

[0168] <Substrate Processing Apparatus According to Modification of Second Embodiment> FIG. 15 is a schematic view for explaining a substrate processing apparatus 1A according to a modified example of the second embodiment.

[0169] The substrate processing apparatus 1A according to the modified example of the second embodiment is the substrate processing apparatus according to the first modified example of the first embodiment. 1 As in the case of FIG. 9, the sulfuric acid treatment chamber 21 is not provided, and the sulfuric acid tank 20 is disposed in the gas treatment chamber 40. The treatment space 40a of the gas treatment chamber 40 is disposed directly above the sulfuric acid tank 20.

[0170] The substrate processing apparatus 1A according to the modified example of the second embodiment can perform substrate processing similar to that performed by the substrate processing apparatus 1 according to the modified example of the first embodiment (see FIGS. 10A to 10C). That is, a batch of substrates W in a vertical position is immersed in a sulfuric acid-containing liquid in the sulfuric acid tank 20, and then the batch of substrates W is lifted up from the sulfuric acid tank 20 to place the batch of substrates W in the processing space 40a (first transfer step).

[0171] However, after the batch of substrates W is removed from the sulfuric acid tank 20 and before the batch of substrates W is exposed to the ozone-containing gas, the state of the lifter 50 is changed from the first supporting state to the second supporting state by the position switching mechanism 70. As a result, the position of the batch of substrates W is changed from the vertical position to the horizontal position (first position changing step).

[0172] The first attitude change step may be performed after the batch of substrates W is removed from the sulfuric acid tank 20 and before the batch of substrates W is placed in the processing space 40a. Alternatively, the first attitude change step may be performed after the lifter 50 is placed in the gas processing position and before the supply of the ozone-containing gas to the processing space 40a is started.

[0173] According to the modification of the second embodiment, the batch of substrates W can be moved from the sulfuric acid tank 20 to the processing space 40a by one-way movement, i.e., by lifting the batch of substrates W from the sulfuric acid tank 20. Therefore, after the sulfuric acid-containing liquid is adhered to the batch of substrates W, the batch of substrates W can be quickly exposed to the ozone-containing gas. Therefore, the organic film can be quickly removed from the substrates W.

[0174] The interior of the sulfuric acid tank 20 and the processing space 40a are separated by a lid member 22 that opens and closes the sulfuric acid tank 20. This prevents the ozone-containing gas from dissolving in the sulfuric acid-containing liquid stored in the sulfuric acid tank 20. This prevents the removal of organic films from the substrates W from starting before the supply of the ozone-containing gas to the processing space 40a is started in the processing of the next batch of substrates W. This prevents the variation in the duration of the processing with peroxodisulfuric acid from batch to batch.

[0175] <Configuration of Substrate Processing Apparatus According to Third Embodiment> Next, the configuration of a substrate processing apparatus 1B according to a third embodiment will be described. Fig. 16 is an elevational view of a main part of the substrate processing apparatus 1B according to the third embodiment. In Fig. 16, the same components as those shown in Figs. 1 to 15 above are given the same reference numerals as in Fig. 1, etc., and descriptions thereof will be omitted. The same applies to Figs. 17A to 22 described below.

[0176] The substrate processing apparatus 1B according to the third embodiment differs from the substrate processing apparatus 1 according to the first embodiment mainly in that the orientation of one batch of substrates W can be switched between a vertical orientation and a horizontal orientation by deformation of the hand 80 of the main transport robot 17. Also, instead of the multiple sub-transport robots 18, multiple elevating transport robots 19 corresponding to the multiple processing units 2, respectively, are provided.

[0177] More specifically, the plurality of lifting and lowering transport robots 19 include a first lifting and lowering transport robot 19A that transports one batch of substrates W between the main transport robot 17 and the sulfuric acid treatment unit 5, a second lifting and lowering transport robot 19B that transports one batch of substrates W between the main transport robot 17 and the ozone gas treatment unit 6, and a third lifting and lowering transport robot 19C that transports one batch of substrates W between the main transport robot 17 and the first rinse treatment unit 7. The first lifting and lowering transport robot 19A is an example of a first transport robot, and the second lifting and lowering transport robot 19B is an example of a second transport robot.

[0178] Although not shown, the multiple lifting and lowering transport robots 19 may include another lifting and lowering transport robot that transports a batch of substrates W between the main transport robot 17 and the chemical liquid processing unit 8, and yet another lifting and lowering transport robot that transports a batch of substrates W between the main transport robot 17 and the second rinse processing unit 9.

[0179] The configuration of each lifting and transport robot 19 is, for example, similar to that of the first sub-transport robot 18A shown in Fig. 3. However, the lifting and transport robot 19 is not provided with a slide mechanism 52 (see Fig. 3).

[0180] The lifter 50 of the second lifting and transport robot 19B is configured to support one batch of substrates W in a horizontal position. The lifter 50 of the second lifting and transport robot 19B is not particularly limited, but may have the following configuration, for example: The lifter 50 includes, for example, a plurality of (for example, the same number as the number of substrates W) peripheral support parts 88 (see also FIG. 18A, etc., described later) that support each substrate W from below, and a connecting part 89 that connects the plurality of peripheral support parts 88.

[0181] Hereinafter, the lifter 50 of the first lifting and transport robot 19A will be referred to as the first lifter 50A, the lifter 50 of the second lifting and transport robot 19B will be referred to as the second lifter 50B, and the lifter 50 of the third lifting and transport robot 19C will be referred to as the third lifter 50C. The first lifter 50A and the third lifter 50C are configured to support one batch of substrates W in a vertical position.

[0182] The first lifter 50A can be raised and lowered between a sulfuric acid treatment position and a first upper position by the lifting mechanism 51 of the first lifting and transfer robot 19A. The second lifter 50B can be raised and lowered between a gas treatment position and a second upper position by the lifting mechanism 51 of the second lifting and transfer robot 19B. The third lifter 50C can be raised and lowered between a rinsing treatment position and a third upper position by the lifting mechanism 51 of the third lifting and transfer robot 19C.

[0183] <Configuration of main transport robot according to the third embodiment> Fig. 17A is a schematic diagram of a main transport robot 17 according to the third embodiment, and Fig. 17B is a cross-sectional view taken along line XVIIB-XVIIB in Fig. 17A.

[0184] The main transport robot 17 is not particularly limited, but may have the following configuration, for example.

[0185] The main transport robot 17 includes a hand 80 capable of holding (supporting) one batch of substrates W, and a slide rail 83 that supports the hand 80 so that it can slide.

[0186] The main transport robot 17 further includes a hand drive mechanism 84 that moves (slides) the hand 80 horizontally along the slide rail 83. The hand 80 moves horizontally between a first delivery position (position shown by solid lines in FIGS. 18A and 18B described later) where one batch of substrates W can be transferred to and from the first lifter 50A located at the first upper position, a second delivery position (position shown by solid lines in FIGS. 18C and 18D described later) where one batch of substrates W can be transferred to and from the second lifter 50B located at the second upper position, and a third delivery position (position shown by solid lines in FIG. 18E described later) where one batch of substrates W can be transferred to and from the third lifter 50C located at the third upper position.

[0187] The hand 80 has a holding portion 85 that holds a batch of substrates W, a pair of holding portions 86 that grip the substrates W held by the holding portion 85, a first connecting shaft 81 that is connected to the holding portion 85 and extends horizontally, and a second connecting shaft 82 that is connected to the first connecting shaft 81 and extends vertically.

[0188] The pair of gripping portions 86 face each other, and grip the substrates W by one gripping portion 86 contacting the peripheral edge of the substrate W and the other gripping portion 86 contacting the peripheral edge at a position opposite to the one gripping portion 86. The pair of gripping portions 86 grip a batch of substrates W by moving toward each other, and release the grip of the batch of substrates W by moving away from each other.

[0189] 17B, the holding portion 85 is provided with a plurality of holding grooves 87 for holding substrates W, and the holding portion 85 can hold the same number of substrates W as the number of holding grooves 87. Each gripping portion 86 may be provided with projections and recesses (not shown) to make it easier to clamp the peripheral edge of the substrate W.

[0190] The main transport robot 17 includes a posture switching mechanism 71 that transforms the hand 80 to switch the posture of one batch of substrates W. The posture switching mechanism 71 includes a first rotation mechanism 72 that rotates the first connecting shaft 81 about its central axis A2, and a second rotation mechanism 73 that rotates the second connecting shaft 82 about its central axis A3.

[0191] By deforming the hand 80 by the first rotation mechanism 72 and the second rotation mechanism 73 while the hand 80 is holding one batch of substrates W, the state of the hand 80 can be switched between a first holding state (see FIG. 18A described later) in which the hand 80 holds one batch of substrates W in a vertical position, and a second holding state (see FIG. 18D described later) in which the hand 80 holds one batch of substrates W in a horizontal position. This allows the position of the one batch of substrates W to be switched between the horizontal position and the vertical position.

[0192] <Example of Substrate Processing According to the Third Embodiment> 18A to 18E are schematic views for explaining the state of the substrate processing apparatus 1B according to the third embodiment during substrate processing.

[0193] No. 3 Substrate processing apparatus 1 according to an embodiment B 5 can be performed. B The substrate processing by the method will be described mainly with respect to the differences from the substrate processing shown in FIGS. 6A to 6C.

[0194] The main transport robot 17 receives a batch of substrates W consisting of a plurality of substrates W from the posture switching robot 16 and moves to the first delivery position. The main transport robot 17, in the first holding state, delivers the batch of substrates W to the first lifting transport robot 19A. The posture of the substrates W delivered to the first lifting transport robot 19A is vertical.

[0195] The first lifter 50A of the first elevating transport robot 19A receives a batch of substrates W while positioned at the first upper position (the position indicated by the two-dot chain line in FIG. 18A). The batch of substrates W is supported by the first lifter 50A of the first elevating transport robot 19A.

[0196] The first lifter 50A descends from the first upper position toward the sulfuric acid treatment position while supporting the batch of substrates W. As a result, the batch of substrates W is immersed in a vertical position in the sulfuric acid-containing liquid in the sulfuric acid tank 20 (sulfuric acid immersion step: step S1), as shown in FIG.

[0197] Thereafter, the first lifter 50A is raised to the first upper position, thereby removing the batch of substrates W from the sulfuric acid-containing liquid in the sulfuric acid tank 20. As shown in Fig. 18B, the hand 80 of the main transport robot 17 receives the batch of substrates W from the first lifter 50A located at the first upper position.

[0198] After receiving the batch of substrates W from the first lifter 50A, the hand 80 of the main transport robot 17 moves to the second delivery position. As shown in Fig. 18C, the state of the hand 80 of the main transport robot 17 is changed to the second holding state by the attitude switching mechanism 71, and the attitude of the batch of substrates W held by the hand 80 is changed from the vertical attitude to the horizontal attitude (first attitude changing step).

[0199] The posture of one batch of substrates W may be changed when the hand 80 is located at the first transfer position, or may be changed when the hand 80 is located at the second transfer position. Alternatively, the posture of one batch of substrates W may be changed at a predetermined time while the hand 80 is moving from the first transfer position to the second transfer position.

[0200] 18C, the second lifter 50B located at the second upper position receives one batch of substrates W in a horizontal position from the main transport robot 17 located at the second delivery position. Thereafter, the second lifter 50B moves from the second upper position (the position indicated by the two-dot chain line in FIG. 18D) toward the gas processing position (the position indicated by the solid line in FIG. 18D).

[0201] With the second lifter 50B in the gas processing position, the ozone gas valve 42 and the exhaust valve 46 are opened. This exhausts the atmosphere in the processing space 40a of the gas processing chamber 40, and an ozone-containing gas is supplied to the processing space 40a. As shown in FIG. 18D, the ozone-containing gas is supplied to the processing space 40a, and one batch of substrates W in a horizontal position is exposed to the ozone-containing gas (ozone exposure step: step S2 shown in FIG. 5, horizontal exposure step).

[0202] When the substrates W having the sulfuric acid-containing liquid attached thereto are exposed to the ozone-containing gas, ozone in the ozone-containing gas dissolves in the sulfuric acid-containing liquid attached to the substrates W, generating peroxodisulfuric acid in the sulfuric acid-containing liquid attached to one batch of substrates W. The peroxodisulfuric acid can dissolve organic films exposed from the substrates W into the sulfuric acid-containing liquid. In some cases, the organic films are not completely dissolved in the sulfuric acid-containing liquid and are peeled off from the top surfaces of the substrates W.

[0203] By supplying the ozone-containing gas to the processing space 40a, the atmosphere in the processing space 40a is replaced with the ozone-containing gas, and the processing space 40a is preferably filled with the ozone-containing gas (ozone-containing gas filling step). If the processing space 40a is filled with the ozone-containing gas, peroxodisulfuric acid can be generated quickly and sufficiently in the sulfuric acid-containing liquid.

[0204] When the second lifter 50B is positioned at the gas processing position while supporting a batch of substrates W in a horizontal position, the positional relationship between the batch of substrates W and the plurality of supply hole rows 49AL and the plurality of exhaust hole rows 49BL is the same as in the second embodiment (see Figure 14).

[0205] Thereafter, the second lifter 50B moves up to the second upper position, thereby removing the batch of substrates W from the gas processing chamber 40. The hand 80 of the main transport robot 17 receives the batch of substrates W from the second lifter 50B located at the second upper position.

[0206] After receiving the batch of substrates W from the second lifter 50B, the hand 80 of the main transport robot 17 moves to the third delivery position. As shown in Fig. 18E, the state of the hand 80 of the main transport robot 17 is changed to the first holding state by the posture switching mechanism 71, and the postures of the batch of substrates W held by the hand 80 are changed from the horizontal posture to the vertical posture (second posture change process).

[0207] The posture of one batch of substrates W may be changed when the hand 80 is located at the second transfer position, or may be changed when the hand 80 is located at the third transfer position. Alternatively, the posture of one batch of substrates W may be changed at a predetermined time while the hand 80 is moving from the second transfer position to the third transfer position.

[0208] As shown in FIG. 18E, the third lifter 50C located at the third upper position receives one batch of substrates W in a vertical position from the main transport robot 17 located at the third delivery position. rinse The wafers W are then lowered toward the processing position, whereby one batch of substrates W in a vertical position are immersed in the rinse liquid in the rinse liquid bath 30 (rinsing step: step S3).

[0209] One batch of substrates W is rinsed by being immersed in the rinse liquid in the rinse liquid tank 30. More specifically, the sulfuric acid-containing liquid in which the organic film has been dissolved and the organic film peeled off from the substrates W are removed from the substrates W.

[0210] After one batch of substrates W is removed from the gas processing chamber 40, the ozone gas valve 42 is closed and the replacement gas valve 44 is opened instead. This allows replacement gas to be supplied to the processing space 40a of the gas processing chamber 40, and the atmosphere in the processing space 40a is replaced with the replacement gas. This removes the ozone-containing gas from the processing space 40a.

[0211] Thereafter, the third elevating transport robot 19C delivers the batch of substrates W to the main transport robot 17. The main transport robot 17 transports the batch of substrates W received from the third elevating transport robot 19C to the drying processing units .

[0212] According to the third embodiment, the same effects as those of the second embodiment are achieved.

[0213] According to the third embodiment, the transport unit 3 includes a first lifting and lowering transport robot 19A (first transport robot), a second lifting and lowering transport robot 19B (second transport robot), and a main transport robot 17 that transports a batch of substrates W between the first lifting and lowering transport robot 19A and the second lifting and lowering transport robot 19B. The attitude switching mechanism 71 switches the attitude of the batch of substrates W being transported by the main transport robot 17 between a horizontal attitude and a vertical attitude.

[0214] Therefore, the transport of one batch of substrates W to the sulfuric acid tank 20, the transport of one batch of substrates W to the gas processing chamber 40, and the change in posture of one batch of substrates W are each performed by different robots, which prevents the configuration of each robot from becoming complicated.

[0215] <Substrate Processing Apparatus According to First Modification of Third Embodiment> FIG. 19 is an elevational view of a main part of a substrate processing apparatus 1B according to a first modified example of the third embodiment.

[0216] In the first variant of the third embodiment, the second lifting and transport robot 19B transports a batch of substrates W in a horizontal position to the gas processing chamber 40, and rotates the substrates W around a vertical axis A4 passing through the center of the batch of substrates W in a horizontal position within the gas processing chamber 40.

[0217] In detail, the second lifting and transporting robot 19B includes a substrate rotation mechanism 90 that rotates the second lifter 50B around the vertical axis A4, a lifting rail 91 that supports the substrate rotation mechanism 90 and the second lifter 50B so that they can be raised and lowered, and a lifting drive mechanism 92 that raises and lowers the second lifter 50B and the substrate rotation mechanism 90 along the lifting rail 91.

[0218] The second lifter 50B of the second lifting and transport robot 19B in the first modified example of the third embodiment is not particularly limited, but may have the following configuration, for example: The second lifter 50B includes, for example, a peripheral edge holding part 96 that holds the peripheral edge of each substrate W, a lifting rail 91, and a peripheral edge holding part 96. 6 and a connecting portion 97 that connects the

[0219] The ozone gas treatment unit 6 also heats the replacement gas in the replacement gas supply passage 43. R A replacement gas flow path heater 93 is included.

[0220] The temperature of the replacement gas is preferably, for example, in the range of 50° C. or higher and 270° C. or lower. The temperature of the replacement gas is preferably in the range of 50° C. or higher and 270° C. or lower, and more preferably in the range of 80° C. or higher and 170° C. or lower.

[0221] 20A and 20B are schematic views illustrating the substrate processing apparatus 1B according to the first modified example of the third embodiment during substrate processing, and FIG. 21 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1B according to the first modified example of the third embodiment.

[0222] The substrate processing apparatus 1B according to the first modified example of the third embodiment can perform substrate processing similar to the substrate processing according to the third embodiment shown in Figures 18A to 18E. The following description will focus on the differences from the substrate processing shown in Figures 18A to 18E.

[0223] 21, according to the substrate processing apparatus 1B of the first modified example of the third embodiment, after the sulfuric acid immersion step (step S1), a substrate rotation step (step S6) is performed before the start of the ozone exposure step (step S2).

[0224] In the substrate processing according to the first modified example of the third embodiment, similarly to the substrate processing according to the third embodiment, one batch of substrates W is immersed in a sulfuric acid-containing liquid and then transferred from the first lifter 50A to the main transport robot 17. Thereafter, as shown in FIG. 20A, the second lifter 50B located at the second upper position receives one batch of substrates W in a horizontal position from the main transport robot 17 located at the second transfer position and in the second holding state. Thereafter, the second lifter 50B returns to the second upper position (FIG. 20 See A ) toward the gas treatment position (the position indicated by the solid line in FIG. 20B).

[0225] With the second lifter 50B positioned at the gas processing position, the second lifter 50B is rotated around the vertical axis A4. As a result, one batch of substrates W rotates together with the second lifter 50B (substrate rotation step: step S6 shown in FIG. 21). As a result, the sulfuric acid-containing liquid splashes from the substrates W, and the liquid film of the sulfuric acid-containing liquid adhering to the main surface of each substrate W is thinned (sulfuric acid thinning step).

[0226] After the rotation of at least one batch of substrates W has begun, the ozone gas valve 42 and the exhaust valve 46 are opened. This causes the atmosphere in the processing space 40a of the gas processing chamber 40 to be exhausted, and an ozone-containing gas is supplied to the processing space 40a. As shown in FIG. 20B, the ozone-containing gas is supplied to the processing space 40a, thereby exposing the batch of substrates W in a horizontal position to the ozone-containing gas (ozone exposure step: step S2 shown in FIG. 21). Note that, during the supply of the ozone-containing gas, the batch of substrates W may be rotated, or the rotation of the batch of substrates W may be stopped.

[0227] After the batch of substrates W has been exposed to the ozone-containing gas, the second lifter 50B moves to the second upper position while the rotation of the second lifter 50B is stopped. Thereafter, the batch of substrates W is transferred to the main transport robot 17, and a rinsing step (step S3 shown in FIG. 21) and a drying step (step S4 shown in FIG. 21) are performed.

[0228] According to the first modified example of the third embodiment, after the attitude changing step and before the batch of substrates W is exposed to the ozone-containing gas in the ozone exposure step, the batch of substrates W is rotated around the vertical axis A4.

[0229] Therefore, excess sulfuric acid-containing liquid can be removed from the substrate W, and the uniformity of the thickness of the sulfuric acid-containing liquid can be improved at each position on the substrate W. This can increase the uniformity of the ozone concentration in the sulfuric acid-containing liquid at each position on the substrate W. As a result, uneven removal of the organic film at each position on the substrate W can be reduced.

[0230] Unlike the first modification, after the rotation of the batch of substrates W has begun, a replacement gas may be supplied to the processing space 40a to heat the batch of substrates W before the ozone-containing gas is supplied to the processing space 40a. Heating the entire batch of substrates W with the replacement gas before the ozone-containing gas is supplied makes it easier to uniformly improve the activity of peroxodisulfuric acid. This reduces uneven removal of organic films between the substrates W.

[0231] <Substrate Processing Apparatus According to Second Modification of Third Embodiment> FIG. 22 is an elevational view of a main part of a substrate processing apparatus 1B according to a second modified example of the third embodiment.

[0232] The substrate processing apparatus 1B of the second modified example of the third embodiment differs from the substrate processing apparatus 1B shown in FIG. 16 in that it further includes a heat processing unit 13 that heats one batch of substrates W while rotating them.

[0233] The heat processing unit 13 includes a heat processing chamber 100 having a heat processing space 100a capable of accommodating one batch of substrates W. The heat processing chamber 100 has an upper end 100b that can be opened and closed. The heat processing unit 13 includes a heating gas supply passage 101 that supplies heating gas to the heat processing chamber 100, a heating gas valve 102 that opens and closes the heating gas supply passage 101, a heating gas exhaust passage 103 that exhausts the atmosphere inside the heat processing chamber 100, and a heating gas exhaust valve 104 that opens and closes the heating gas exhaust passage 103.

[0234] The heating gas is, for example, an inert gas. The temperature of the heating gas is, for example, preferably in the range of 50°C or higher and 270°C or lower. The temperature of the heating gas is preferably in the range of 50°C or higher and 270°C or lower, and more preferably in the range of 80°C or higher and 170°C or lower.

[0235] The substrate processing apparatus 1B further includes a fourth lifting transport robot 19D that transports a batch of substrates W between the main transport robot 17 and the heat processing unit 13. The fourth lifting transport robot 19D is an example of a third transport robot. The configuration of the fourth lifting transport robot 19D is similar to that of the first sub-transport robot 18A shown in FIG. 3, for example.

[0236] However, the fourth elevating and transport robot 19D is not provided with the slide mechanism 52. Furthermore, the fourth elevating and transport robot 19D is configured to support one batch of substrates W in a horizontal position.

[0237] The fourth lifting and transport robot 19D is A fourth lifter 50D, The device includes a substrate rotation mechanism 105 that rotates the fourth lifter 50D around a vertical axis A5, a lifting rail 106 that supports the substrate rotation mechanism 105 and the fourth lifter 50D so that they can be raised and lowered, and a lifting drive mechanism 107 that raises and lowers the fourth lifter 50D and the substrate rotation mechanism 105 along the lifting rail 106.

[0238] The fourth lifter 50D of the fourth lifting and transport robot 19D is not particularly limited, but may have the following configuration, for example: The fourth lifter 50D includes, for example, a peripheral edge holding portion 108 that holds the peripheral edge of each substrate W, and a connecting portion 109 that connects the lifting rail 106 and the peripheral edge holding portion 108. The fourth lifter 50D of the fourth lifting and transport robot 19D is located directly above the heat treatment unit 13. 5 The upper position and the batch of substrates W heating Processing Space 100 The heating unit can be raised and lowered between the heating unit and a heat treatment position.

[0239] The fourth lifting and transporting robot 19D transports multiple substrates W in a horizontal position to the heat treatment chamber 100 and rotates the multiple substrates W around a vertical axis A5 passing through the center of the multiple substrates W in a horizontal position within the heat treatment chamber 100.

[0240] In the second modification of the third embodiment, the hand 80 of the main transport robot 17 is 5It can be moved to a fourth delivery position where one batch of substrates W can be delivered to and from the fourth lifter 50D which is positioned at the upper position.

[0241] 21 can also be performed in the second modified example of the third embodiment. That is, according to the substrate processing apparatus 1B of the second modified example of the third embodiment, after the sulfuric acid immersion step (step S1), a substrate rotation step (step S6) is performed before the start of the ozone exposure step (step S2). The details are as follows.

[0242] More specifically, in the substrate processing according to the second modified example of the third embodiment, similarly to the substrate processing according to the third embodiment, one batch of substrates W is immersed in a sulfuric acid-containing liquid and then transferred from the first lifter 50A to the main transport robot 17. 5 The fourth lifter 50D, which is positioned at the upper position, receives one batch of substrates W in a horizontal position from the main transport robot 17, which is positioned at the fourth delivery position. Thereafter, the fourth lifter 50D moves from the fourth upper position toward the heat treatment position.

[0243] With the fourth lifter 50D positioned at the heat treatment position, the fourth lifter 50D is rotated around the vertical axis A5. As a result, one batch of substrates W rotates together with the fourth lifter 50D (substrate rotation step: step S6). As a result, the sulfuric acid-containing liquid is scattered from the substrates W, and the liquid film of the sulfuric acid-containing liquid adhering to the main surface of each substrate W is thinned (sulfuric acid thinning step).

[0244] Simultaneously with or after the start of rotation of the batch of substrates W, the heating gas valve 102 and the heating gas exhaust valve 104 are opened. This causes the atmosphere in the heating treatment space 100a of the heat treatment chamber 100 to be exhausted, and heating gas is supplied to the heating treatment space 100a. The supply of heating gas into the heating treatment space 100a heats the batch of substrates W in a horizontal position (heating rotation process).

[0245] Thereafter, the batch of substrates W is transferred from the fourth lifter 50D to the main transport robot 17, and an ozone exposure step (step S2 in FIG. 21), a rinsing step (step S3 in FIG. 21), and a drying step (step S4 in FIG. 21) are performed.

[0246] According to the second modification of the third embodiment, one batch of substrates W can be rotated in the heat treatment chamber 100 to remove excess sulfuric acid-containing liquid from the substrates W. By removing the sulfuric acid-containing liquid by rotating the substrates W, the uniformity of the thickness of the sulfuric acid-containing liquid at each position on the substrates W can be improved.

[0247] Since the excess sulfuric acid-containing liquid is removed from the substrates W in the heat treatment chamber 100, one batch of substrates W can be heated while the sulfuric acid-containing liquid is being removed. The heated batch of substrates W is transported to the main transport robot 17 and the second elevating transport robot 19B. gas Processing chamber 40 By carrying the substrates W into the ozone-containing gas tank, excess sulfuric acid-containing liquid is removed, and the heated batch of substrates W can be exposed to the ozone-containing gas. This increases the uniformity of the ozone concentration in the sulfuric acid-containing liquid at each position on the substrates W, while also increasing the activity of peroxodisulfuric acid. As a result, uneven removal of organic films at each position on the substrates W can be further reduced.

[0248] Unlike the second modified example, the heating gas valve 102 and the heating gas exhaust valve 104 may be opened to sufficiently heat the heat processing chamber 100 before the rotation of one batch of substrates W is started.

[0249] <Other embodiments> The present invention is not limited to the above-described embodiment, and can be embodied in other forms.

[0250] (1) For example, the plurality of processing units 2 may include a single-wafer processing unit 110 that processes substrates W one by one, as shown in Fig. 23. Specifically, the single-wafer processing unit 110 includes a spin chuck 111, a processing cup 112, a heater 113, an ozone-containing gas nozzle 114, a rinse liquid nozzle 115, and a chamber 116.

[0251] The spin chuck 111 holds the substrate W in a horizontal position and rotates the substrate W about a vertical axis A6 passing through the center of the substrate W. The processing cup 112 surrounds the spin chuck 111 and receives processing liquid scattered from the substrate W. The heater 113 heats the substrate W held on the spin chuck 111. The ozone-containing gas nozzle 114 supplies an ozone-containing gas toward the substrate W. The rinse liquid nozzle 115 supplies a rinse liquid toward the substrate W.

[0252] After one batch of substrates W is immersed in the sulfuric acid-containing liquid in the sulfuric acid tank 20, one of the substrates W in the batch is transported to the single-wafer processing unit 110 (transport step). The substrate W transported into the single-wafer processing unit 110 is rotated by the spin chuck 111 and heated by the heater 113 (substrate rotation step). Thereafter, an ozone-containing gas is discharged from the ozone-containing gas nozzle 114, thereby exposing the substrate W with the sulfuric acid-containing liquid adhering thereto to the ozone-containing gas (ozone exposure step). The single-wafer processing unit 110 is an example of an ozone gas processing unit.

[0253] Thereafter, the substrate W is rinsed by discharging a rinse liquid from the rinse liquid nozzle 115. Thereafter, the substrate W is further rotated at high speed by the spin chuck 111, thereby drying the substrate W (drying step).

[0254] If a plurality of single wafer processing units 110 are provided, after one batch of substrates W has been immersed in the sulfuric acid-containing liquid, all of the substrates W can be quickly exposed to the ozone-containing gas.

[0255] (2) A heater 120 (see the two-dot chain line in FIG. 2) may be provided to heat the sulfuric acid-containing liquid stored in the sulfuric acid tank 20. For example, the temperature of the sulfuric acid-containing liquid is preferably 150°C or higher. Heating the sulfuric acid-containing liquid with the heater 120 increases the activity of peroxodisulfuric acid, and the organic film can be quickly removed. Instead of the heater 120, a heater may be provided to heat the sulfuric acid-containing liquid in a pipe that supplies the sulfuric acid-containing liquid to the sulfuric acid tank 20. Furthermore, the sulfuric acid-containing liquid used in the sulfuric acid tank 20 may be discharged from the sulfuric acid tank 20 and reused.

[0256] (3) In the first modified example of the first embodiment and the modified example of the second embodiment, the sulfuric acid tank 20 is disposed in the gas treatment chamber 40. However, the sulfuric acid tank 20 may be housed in the sulfuric acid treatment chamber 21, and the gas treatment chamber 40 may be disposed directly above the sulfuric acid treatment chamber 21.

[0257] (4) If the lifter 50 and the hand 80 are not provided with a mechanism for switching the orientation of the substrates W, the orientation of the batch of substrates W may be changed from a vertical orientation to a horizontal orientation by the orientation switching robot 16 after the sulfuric acid immersion step. Similarly, the orientation of the batch of substrates W may be changed from a horizontal orientation to a vertical orientation by the orientation switching robot 16 after the ozone exposure step.

[0258] Furthermore, by using the substrate processing apparatus 1A, one batch Substrate It is also possible to perform the sulfuric acid immersion step, the ozone exposure step, and the rinsing step while maintaining the W in a horizontal position.

[0259] (5) The processing space 40a may be filled with ozone-containing gas before a batch of substrates W is transferred to the ozone gas processing unit 6. In this case, the batch of substrates W can be exposed to the ozone-containing gas by transferring the batch of substrates W to the ozone gas processing unit 6. The key is that the batch of substrates W transferred to the ozone gas processing unit 6 should be exposed to the ozone-containing gas. In other words, the supply of the ozone-containing gas to the processing space 40a may be started before or after the batch of substrates W is placed in the processing space 40a.

[0260] (6) In each of the above-described embodiments, the controller 4 controls the entire substrate processing apparatus 1. However, the controllers controlling the components of the substrate processing apparatus 1 may be distributed across multiple locations. Furthermore, the controller 4 does not need to directly control each component, and signals output from the controller 4 may be received by a slave controller that controls each component of the substrate processing apparatus 1.

[0261] (7) In the above embodiment, expressions such as "horizontal" and "vertical" are used, but they do not necessarily have to be "horizontal" and "vertical" in a strict sense. In other words, these expressions allow for deviations due to manufacturing precision, installation precision, etc.

[0262] (8) Although each component may be shown as a schematic block, the shape, size, and positional relationship of each block do not represent the shape, size, and positional relationship of each component.

[0263] In addition, various modifications can be made within the scope of the claims. [Explanation of symbols]

[0264] 1: Substrate processing equipment 1A: Substrate processing equipment 1B: Substrate processing equipment 3: Transport unit 6: Ozone gas treatment unit 17: Main transport robot 18: Sub-transport robot 19A: First lifting and transport robot (first transport robot) 19B: Second lifting transport robot (second transport robot) 19D: 4th lifting transport robot (3rd transport robot) 20: Sulfuric acid tank 22: Lid member 40: Gas treatment chamber 40a: Processing space 48 :Wall part 49A: Supply hole 49AL: Supply hole row 49B: Exhaust hole 50: Lifter 70: Posture switching mechanism 71: Posture switching mechanism 100: Heat treatment chamber A4: Vertical axis A5: Vertical axis D1: First arrangement direction (predetermined arrangement direction) D2: Second arrangement direction (predetermined arrangement direction) W: Substrate

Claims

1. a sulfuric acid immersion step of immersing a plurality of substrates in a sulfuric acid-containing solution in a sulfuric acid tank; a transport step of removing the plurality of substrates from the sulfuric acid tank and transporting the plurality of substrates to an ozone gas treatment unit; an ozone exposure step of exposing the plurality of substrates transported to the ozone gas treatment unit to an ozone-containing gas, the transporting step includes transporting the plurality of substrates from the sulfuric acid tank to the ozone gas treatment unit in a state in which the sulfuric acid-containing liquid is attached to surfaces of the plurality of substrates; The ozone exposure step is a substrate processing method in which the ozone-containing gas is dissolved in the sulfuric acid-containing liquid attached to the surfaces of the plurality of substrates to generate peroxodisulfuric acid in the sulfuric acid-containing liquid.

2. the ozone gas treatment unit includes a gas treatment chamber that accommodates a plurality of the substrates; 2. The substrate processing method according to claim 1, wherein the ozone exposure step includes a step of exposing the plurality of substrates removed from the sulfuric acid tank to an ozone-containing gas by placing the plurality of substrates in a processing space within the gas processing chamber.

3. 3. The substrate processing method according to claim 2, wherein the ozone exposure step includes a step of exposing the plurality of substrates placed in the processing space to the ozone-containing gas by supplying an ozone-containing gas into the processing space from a plurality of supply holes opening in a wall portion that partitions the processing space and evacuating the processing space through a plurality of exhaust holes opening in the wall portion.

4. In the gas processing chamber, a plurality of supply hole rows, each of which is formed by a plurality of the supply holes, are arranged in a predetermined arrangement direction, 4. The substrate processing method according to claim 3, wherein the ozone exposure step includes a step of arranging the plurality of substrates in the processing space so that the plurality of substrates are aligned in the arrangement direction and each substrate is positioned between the rows of supply holes.

5. the sulfuric acid immersion step includes a vertical immersion step of immersing the plurality of substrates in a vertical position into a sulfuric acid-containing solution in the sulfuric acid tank, The method further includes a posture changing step of changing the postures of the plurality of substrates removed from the sulfuric acid tank from a vertical posture to a horizontal posture, 5. The substrate processing method according to claim 2, wherein the ozone exposure step includes a horizontal exposure step of exposing the plurality of substrates in a horizontal position to an ozone-containing gas.

6. 6. The substrate processing method according to claim 5, further comprising a substrate rotation step of rotating the plurality of substrates about a vertical axis passing through the centers of the plurality of horizontally oriented substrates after the attitude changing step and before the plurality of substrates are exposed to the ozone-containing gas in the ozone exposure step.

7. the treatment space is disposed directly above the sulfuric acid tank, 7. The substrate processing method according to claim 2, wherein the transport step includes the step of lifting the plurality of substrates from the sulfuric acid bath to place the plurality of substrates in the processing space.

8. a sulfuric acid tank for storing a sulfuric acid-containing liquid in which a plurality of substrates can be immersed; an ozone gas treatment unit for exposing a plurality of substrates to an ozone-containing gas; a transport unit that transports a plurality of substrates between the sulfuric acid tank and the ozone gas treatment unit, the transport unit transports the plurality of substrates from the sulfuric acid tank to the ozone gas treatment unit in a state in which the sulfuric acid-containing liquid adheres to the surfaces of the plurality of substrates; The ozone gas processing unit dissolves the ozone-containing gas in the sulfuric acid-containing liquid adhering to the surfaces of the plurality of substrates, thereby generating peroxodisulfuric acid in the sulfuric acid-containing liquid.

9. 9. The substrate processing apparatus according to claim 8, wherein the ozone gas processing unit includes a gas processing chamber having a processing space capable of accommodating a plurality of substrates, and exposing the plurality of substrates accommodated in the processing space to an ozone-containing gas.

10. 10. The substrate processing apparatus according to claim 9, wherein the gas processing chamber has a wall portion that partitions the processing space, a plurality of supply holes that open in the wall portion and supply an ozone-containing gas to the processing space, and a plurality of exhaust holes that open in the wall portion and exhaust the processing space.

11. the gas processing chamber has a plurality of supply hole rows each formed of a plurality of the supply holes, the plurality of supply hole rows being aligned in a predetermined arrangement direction, 11. The substrate processing apparatus according to claim 10, wherein the transport unit supports the plurality of substrates so that the substrates are arranged in the arrangement direction, and loads the plurality of substrates into the gas processing chamber so that each substrate is positioned between the rows of supply holes.

12. the sulfuric acid tank is capable of immersing a plurality of substrates in a vertical position in a sulfuric acid-containing solution; the processing space is capable of accommodating a plurality of substrates in a horizontal position; 12. The substrate processing apparatus according to claim 9, wherein the transport unit includes a position switching mechanism that switches the position of the plurality of substrates between a vertical position and a horizontal position.

13. the transport unit includes a transport robot having a lifter that supports a plurality of substrates and that transports the plurality of substrates between the sulfuric acid tank and the gas processing chamber; The substrate processing apparatus according to claim 12 , wherein the position switching mechanism switches the position of the plurality of substrates between a vertical position and a horizontal position by deforming the lifter.

14. the treatment space is disposed directly above the sulfuric acid tank, 14. The substrate processing apparatus according to claim 9, wherein the transport unit moves up and down while supporting the plurality of substrates, thereby transporting the plurality of substrates between the gas processing chamber and the sulfuric acid tank.

15. The substrate processing apparatus according to claim 14 , further comprising a cover member that separates the interior of the sulfuric acid tank from the processing space and opens and closes the sulfuric acid tank.

16. the transport unit includes a first transport robot that transports a plurality of substrates in a vertical position to the sulfuric acid tank, a second transport robot that transports a plurality of substrates in a horizontal position to the gas processing chamber, and a main transport robot that transports the plurality of substrates between the first transport robot and the second transport robot, The substrate processing apparatus according to claim 12 , wherein the attitude switching mechanism switches the attitudes of the plurality of substrates being transported by the main transport robot between a horizontal attitude and a vertical attitude.

17. 17. The substrate processing apparatus according to claim 16, wherein the second transfer robot transfers a plurality of substrates in a horizontal position to the gas processing chamber and rotates the plurality of substrates in the gas processing chamber around a vertical axis passing through centers of the plurality of substrates in a horizontal position.

18. Further including a heat treatment chamber for heating the plurality of substrates; the transport unit further includes a third transport robot that transports a plurality of substrates in a horizontal position to the heat treatment chamber and rotates the plurality of substrates in the heat treatment chamber around a vertical axis passing through centers of the plurality of substrates in a horizontal position; The substrate processing apparatus according to claim 16 , wherein the main transport robot transports a plurality of substrates among the sulfuric acid tank, the gas processing chamber, and the heat processing chamber.

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