SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a substrate processing device and a substrate processing method, capable of processing an upper surface of a substrate evenly, without using a scan nozzle moving horizontally while discharging a processing liquid.SOLUTION: A substrate processing device includes a spin chuck 10, a blocking member 33, a lateral discharge port 53, and rotation means. The blocking member 33 includes: an opposite surface 62 facing an upper surface of a substrate W that is held horizontally by the spin chuck 10; a central opening 38 opening on the opposite surface 62; and a plurality of projections 63 projecting downward from the opposite surface 62 and dropping a processing liquid flowing outward along the opposite surface 62 on the upper surface of the substrate W. The lateral discharge port 53 is disposed inside an inner periphery of the opposite surface 62 forming the central opening 38, and forms a flow of the processing liquid flowing outward along the opposite surface 62 by discharging the processing liquid in a horizontal direction or a direction tilted relative to the horizontal direction. The rotation means rotates the blocking member 33 relative to the lateral discharge port 53.SELECTED DRAWING: Figure 13

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing substrates, including, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices and organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0002] Patent Document 1 discloses a top plate facing the upper surface of the substrate and an upper nozzle that discharges a processing liquid from the center of the top plate toward the center of the upper surface of the substrate. Patent Document 1 also discloses a discharge port that supplies a rinse liquid to the lower surface of the top plate (see FIG. 8 of Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-56166 Summary of the Invention [Problem to be solved by the invention]

[0004] In the substrate processing apparatus described in Patent Document 1, processing liquid ejected downward from an upper nozzle strikes the center of the upper surface of the substrate and then flows outward along the upper surface of the substrate. This method of supplying processing liquid results in less uniform processing of the upper surface of the substrate (in-plane uniformity) than when a scan nozzle, which moves horizontally while ejecting processing liquid, is used. While the use of a scan nozzle can improve in-plane uniformity, when a blocking member such as a top plate is placed close to the upper surface of the substrate, it may not be possible to position the scan nozzle between the substrate and the blocking member.

[0005] Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can uniformly process the upper surface of a substrate without using a scan nozzle that moves horizontally while discharging a processing liquid. [Means for solving the problem]

[0006] One embodiment of the present invention to achieve the above-mentioned object provides a substrate processing apparatus comprising: a substrate holding means for holding a substrate horizontally; a blocking member including an opposing surface facing the upper surface of the substrate held by the substrate holding means, a central opening opening on the opposing surface, and a plurality of protrusions protruding downward from the opposing surface and causing processing liquid flowing outward along the opposing surface to fall onto the upper surface of the substrate; a lateral discharge port located inside the inner peripheral edge of the opposing surface that forms the central opening, and discharging processing liquid horizontally or in a direction inclined relative to the horizontal, thereby forming a flow of processing liquid that flows outward along the opposing surface; and a rotation means for rotating the blocking member relative to the lateral discharge port around a vertical rotation axis passing through the center of the substrate.

[0007] According to this configuration, the processing liquid is discharged from the horizontal discharge port located inside the inner peripheral edge of the opposing surface of the blocking member, forming a flow of processing liquid that flows outward along the opposing surface. When the blocking member rotates relative to the horizontal discharge port, the processing liquid discharged from the horizontal discharge port is supplied to the entire circumference of the opposing surface. The processing liquid that flows outward along the opposing surface while in contact with the opposing surface collides with multiple protrusions that protrude downward from the opposing surface. The multiple protrusions provide resistance to the processing liquid that flows outward along the opposing surface while in contact with the opposing surface. Due to these effects, some processing liquid does not reach the outer periphery of the opposing surface and leaves the opposing surface at or near the multiple protrusions.

[0008] The processing liquid that leaves the facing surface at or near the multiple protrusions forms numerous droplets that fall randomly onto the substrate. These droplets first contact the top surface of the substrate outside of the substrate's center, rather than at the substrate's center. Furthermore, the distance from the substrate's center to the position where the droplet falls on the substrate is not the same each time but varies randomly. Therefore, the top surface of the substrate can be processed more uniformly than when the processing liquid first contacts the top surface of the substrate only at the center of the substrate. This allows for improved processing uniformity on the top surface of the substrate without using a scan nozzle.

[0009] In one embodiment, at least two of the plurality of protrusions are spaced apart in the circumferential and radial directions of the opposing surface.

[0010] According to this configuration, at least two protrusions are spaced apart in the circumferential direction of the opposing surface, which is a horizontal direction around the rotation axis. Therefore, the amount of processing liquid dropping from the opposing surface onto the substrate can be increased compared to when at least two protrusions are aligned in the radial direction of the opposing surface. Furthermore, the at least two protrusions are also spaced apart in the radial direction of the opposing surface, which is a horizontal direction perpendicular to the rotation axis. Therefore, the distance from the center of the substrate to the position where the droplets drop onto the substrate can be forcibly changed.

[0011] In one embodiment, the number of the protrusions intersecting the radius of the opposing surface varies within a range of natural numbers depending on the circumferential position of the opposing surface.

[0012] According to this configuration, the number of protrusions intersecting the radius of the opposing surface increases or decreases depending on the position in the circumferential direction of the opposing surface. For example, if N (N is a natural number) protrusions are arranged on one radius of the opposing surface, S (S is a natural number) protrusions different from N are arranged on another radius of the opposing surface. The amount of processing liquid dropping from the opposing surface onto the substrate changes depending on the number of protrusions intersecting the radius of the opposing surface. Therefore, the amount of processing liquid dropping from the opposing surface onto the substrate can be increased or decreased depending on the position in the circumferential direction of the opposing surface.

[0013] In one embodiment, the substrate processing apparatus further includes a downward discharge port located inside the inner peripheral edge of the opposing surface and discharging processing liquid downward toward the center of the upper surface of the substrate, a first valve that switches between a discharge execution state in which the downward discharge port discharges processing liquid and a discharge stop state in which the downward discharge port stops discharging processing liquid, a second valve that switches between a discharge execution state in which the lateral discharge port discharges processing liquid and a discharge stop state in which the lateral discharge port stops discharging processing liquid, and a control device that switches the first valve and the second valve to start discharging processing liquid from the downward discharge port, and then start discharging processing liquid from the lateral discharge port while the downward discharge port is discharging processing liquid.

[0014] According to this configuration, the processing liquid is discharged from the downward-facing discharge port, which is located inside the inner periphery of the opposing surface of the blocking member, to supply the processing liquid to the center of the upper surface of the substrate. After the control device starts discharging the processing liquid from the downward-facing discharge port, it starts discharging the processing liquid from the lateral discharge port while the downward-facing discharge port is still discharging the processing liquid. Therefore, after the upper surface of the substrate is quickly covered with a liquid film of the processing liquid discharged from the downward-facing discharge port, the processing liquid that has fallen from the opposing surface can be supplied to the upper surface of the substrate via the liquid film of the processing liquid. If there is a liquid on the substrate other than the processing liquid discharged from the downward-facing discharge port and the lateral discharge port, this liquid can be quickly replaced with the processing liquid discharged from the downward-facing discharge port.

[0015] In one embodiment, the substrate processing apparatus further includes a downward discharge port located inside the inner peripheral edge of the opposing surface and discharging processing liquid downward toward the center of the upper surface of the substrate, a first valve that switches between a discharge execution state in which the downward discharge port discharges processing liquid and a discharge stop state in which the downward discharge port stops discharging processing liquid, a second valve that switches between a discharge execution state in which the horizontal discharge port discharges processing liquid and a discharge stop state in which the horizontal discharge port stops discharging processing liquid, and a control device that switches the first valve and the second valve to start discharging processing liquid from the horizontal discharge port, and then start discharging processing liquid from the downward discharge port while the horizontal discharge port is discharging processing liquid.

[0016] According to this configuration, the processing liquid is discharged from the downward-facing discharge port, which is located inside the inner peripheral edge of the opposing surface of the blocking member, to supply the processing liquid to the center of the upper surface of the substrate. After the control device starts discharging the processing liquid from the lateral discharge port, it starts discharging the processing liquid from the downward-facing discharge port while the lateral discharge port is still discharging the processing liquid. Therefore, the processing liquid discharged from the lateral discharge port can be supplied to the entire periphery of the opposing surface, and then the processing liquid discharged from the downward-facing discharge port can be supplied to the upper surface of the substrate.

[0017] For example, if the processing liquid discharged from the downward discharge port is supplied to the upper surface of the substrate in a state in which a liquid other than the processing liquid discharged from the downward discharge port and the lateral discharge port is adhering to the opposing surface, the other liquid may fall from the opposing surface and mix with the processing liquid on the substrate. If the processing liquid is discharged from the lateral discharge port before the downward discharge port starts discharging the processing liquid, the liquid adhering to the opposing surface can be removed, and the mixing of the other liquid as described above can be prevented.

[0018] In one embodiment, the substrate processing apparatus further includes: a chemical solution pipe that guides the chemical solution to be discharged from the horizontal discharge port toward the horizontal discharge port; a rinse solution pipe that guides the rinse solution to be discharged from the horizontal discharge port toward the horizontal discharge port; a chemical solution valve that switches between a discharge execution state in which the horizontal discharge port discharges the chemical solution and a discharge stop state in which the horizontal discharge port stops discharging the chemical solution; a rinse solution valve that switches between a discharge execution state in which the horizontal discharge port discharges the rinse solution and a discharge stop state in which the horizontal discharge port stops discharging the rinse solution; and a control device that switches the chemical solution valve and the rinse solution valve to discharge the chemical solution into the horizontal discharge port and then discharge the rinse solution into the horizontal discharge port, thereby washing away the chemical solution adhering to the opposing surface with the rinse solution.

[0019] According to this configuration, a chemical solution is discharged from the horizontal discharge port, causing the chemical solution to fall from the opposing surface onto the substrate. Then, a rinse liquid is discharged from the horizontal discharge port, causing the rinse liquid to fall from the opposing surface onto the substrate. This allows the upper surface of the substrate to be treated with the chemical solution, and then the chemical solution on the substrate to be rinsed away with the rinse liquid. Furthermore, because the chemical solution adhering to the opposing surface can be rinsed away with the rinse liquid, it is possible to prevent the chemical solution from falling from the opposing surface onto the substrate after the chemical solution on the substrate has been rinsed away. Additionally, since the rinse liquid is supplied to the substrate and the opposing surface simultaneously, the substrate processing apparatus can be operated efficiently.

[0020] In one embodiment, the blocking member further includes an inner circumferential surface that extends downward from the opposing surface and surrounds the substrate.

[0021] With this configuration, the inner circumferential surface of the blocking member surrounds the substrate with the opposing surface of the blocking member facing the upper surface of the substrate. This allows the substrate to be isolated from the space above the blocking member and the space around the blocking member. However, with such a blocking member, it is difficult to position a scan nozzle between the substrate and the blocking member. Therefore, by using a horizontal discharge port and multiple protrusions, it is possible to improve the sealing of the space between the substrate and the blocking member while also improving the uniformity of processing on the upper surface of the substrate.

[0022] In one embodiment, at least two of the plurality of protrusions have different protrusion amounts.

[0023] According to this configuration, at least two protrusions are provided, each having a different amount of protrusion from the facing surface. Each protrusion provides resistance to the processing liquid flowing outward along the facing surface. As the amount of protrusion of the protrusion increases, this resistance increases, and as the amount of protrusion of the protrusion decreases, this resistance decreases. Therefore, by changing the amount of protrusion, it is possible to intentionally adjust the amount of processing liquid dropping from the facing surface onto the substrate. For example, by increasing the height of the protrusion corresponding to the outer periphery of the substrate, it is possible to increase the amount of processing liquid dropping onto the outer periphery of the upper surface of the substrate, thereby improving the uniformity of processing on the upper surface of the substrate.

[0024] In one embodiment, the contact angle of water on at least one of the plurality of protrusions is greater than the contact angle of water on the opposing surface.

[0025] According to this configuration, at least one of the plurality of protrusions is more hydrophobic than the facing surface. If the contact angle of water on the protrusions is higher than the contact angle of water on the facing surface, the processing liquid flowing outward along the facing surface is more likely to fall off the protrusions. Therefore, by making the contact angle of water on the protrusions larger than the contact angle of water on the facing surface, it is possible to intentionally increase the amount of processing liquid that falls from the facing surface onto the substrate.

[0026] The substrate processing apparatus may further include a diaphragm that forms the protrusion, a driven magnet that changes the amount of protrusion of the protrusion by pressing the diaphragm and causing the diaphragm to elastically deform, a drive magnet that applies a repulsive force to the driven magnet, and a lifting actuator that changes the magnitude of the repulsive force acting between the drive magnet and the driven magnet by raising and lowering the drive magnet.

[0027] With this configuration, when the lifting actuator brings the drive magnet closer to the driven magnet, the diaphragm is pushed by the driven magnet and elastically deforms. This increases the amount of protrusion formed by the diaphragm. When the lifting actuator moves the drive magnet away from the driven magnet, the diaphragm returns to its original shape, reducing the amount of protrusion. Therefore, by changing the position of the drive magnet, the amount of protrusion of the protrusion can be increased or decreased, and the amount of processing liquid dropping onto the substrate from the opposing surface can be adjusted.

[0028] According to one embodiment of the present invention, there is provided a substrate processing method including the steps of: placing a blocking member facing a top surface of a substrate held horizontally; discharging a processing liquid horizontally or at an angle relative to the horizontal direction from a lateral outlet located inside an inner peripheral edge of the blocking member that defines a central opening of the blocking member, thereby forming a flow of processing liquid flowing outward along the facing surface; rotating the blocking member relative to the lateral outlet while discharging the processing liquid from the lateral outlet; and causing the processing liquid flowing outward along the facing surface to collide with a plurality of protrusions of the blocking member that protrude downward from the facing surface, thereby causing the processing liquid to fall onto the top surface of the substrate. This method can achieve the same effects as the substrate processing apparatus described above. [Brief explanation of the drawings]

[0029] [Figure 1A] 1 is a schematic plan view showing a layout of a substrate processing apparatus according to an embodiment of the present invention. [Figure 1B] FIG. 2 is a schematic side view of the substrate processing apparatus. [Figure 2] FIG. 2 is a schematic diagram showing the interior of the processing unit as viewed horizontally. [Figure 3] FIG. 3 is an enlarged view of a part of FIG. 2, showing the lifting frame and the blocking member in an upper position. [Figure 4] FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus. [Figure 5]5A to 5C are process diagrams for explaining an example of substrate processing performed by the substrate processing apparatus. [Figure 6] FIG. 3 is a schematic cross-sectional view showing a vertical cross section of the blocking member. [Figure 7] FIG. 2 is a schematic diagram of a central nozzle. [Figure 8] FIG. 7 is an enlarged view of a part of FIG. 6. [Figure 9A-C] FIG. 2 is a schematic diagram of a protrusion. [Figure 10] FIG. 4 is a schematic view of the blocking member as seen from below. [Figure 11] FIG. 11 is an enlarged view of a part of FIG. [Figure 12] FIG. 10 is a schematic cross-sectional view showing a state in which the downward discharge port is discharging the chemical solution. [Figure 13] FIG. 10 is a schematic cross-sectional view showing a state in which the downward discharge port and the lateral discharge port are discharging the chemical liquid. [Figure 14] FIG. 10 is a schematic cross-sectional view showing a state in which the rinsing liquid is being discharged from the horizontal discharge port. [Figure 15] FIG. 10 is a schematic cross-sectional view showing a state in which the downward and lateral discharge ports are discharging the rinse liquid. [Figures 16A-C] FIG. 10 is a schematic side view of a protrusion according to another embodiment of the present invention. [Figures 17A-C] 10 is a schematic view of a protrusion according to yet another embodiment of the present invention. FIG. [Figure 18] FIG. 10 is a schematic cross-sectional view showing a vertical cross section of a blocking member according to still another embodiment of the present invention. [Figure 19] FIG. 10 is a schematic cross-sectional view showing a vertical cross section of a blocking member according to still another embodiment of the present invention. [Figure 20] 10 is a schematic cross-sectional view showing a vertical cross section of a blocking member according to yet another embodiment of the present invention, illustrating the diaphragm in a flat state. FIG. [Figure 21] 10 is a schematic cross-sectional view showing a vertical cross section of a blocking member according to yet another embodiment of the present invention, illustrating the diaphragm in a protruding state. FIG. [Figure 22] FIG. 10 is a schematic cross-sectional view showing a vertical cross section of a blocking member according to still another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0031] Fig. 1A is a schematic plan view showing the layout of a substrate processing apparatus 1 according to one embodiment of the present invention, and Fig. 1B is a schematic side view of the substrate processing apparatus 1.

[0032] 1A, the substrate processing apparatus 1 is a single-wafer processing apparatus that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a load port LP that holds a carrier C that accommodates the substrate W, a plurality of processing units 2 that process the substrates W transferred from the carrier C on the load port LP, a transfer system that transfers the substrates W between the carrier C on the load port LP and the processing units 2, and a control device 3 that controls the substrate processing apparatus 1.

[0033] The transport system includes an indexer robot IR that loads and unloads substrates W into and from carriers C on a load port LP, and a center robot CR that loads and unloads substrates W into and from a plurality of processing units 2. The indexer robot IR transports substrates W between the load port LP and the center robot CR, and the center robot CR transports substrates W between the indexer robot IR and the processing units 2. The center robot CR includes a hand H1 that supports the substrate W, and the indexer robot IR includes a hand H2 that supports the substrate W.

[0034] The processing units 2 form multiple towers TW arranged around a center robot CR in a plan view. FIG. 1A shows an example in which four towers TW are formed. The center robot CR can access any of the towers TW. As shown in FIG. 1B, each tower TW includes multiple (e.g., three) processing units 2 stacked one on top of the other.

[0035] Next, the processing unit 2 will be described.

[0036] Fig. 2 is a schematic diagram of the interior of the processing unit 2 viewed horizontally. Fig. 3 is an enlarged view of a portion of Fig. 2. Fig. 2 shows the lifting frame 32 and the blocking member 33 in a state where they are in a lower position, and Fig. 3 shows the lifting frame 32 and the blocking member 33 in a state where they are in an upper position.

[0037] The processing unit 2 includes a box-shaped chamber 4 having an internal space, a spin chuck 10 that holds one substrate W horizontally within the chamber 4 and rotates the substrate W about a vertical rotation axis A1 that passes through the center of the substrate W, and a cylindrical processing cup 23 that surrounds the spin chuck 10 about the rotation axis A1. The spin chuck 10 is an example of a substrate holding means (substrate holder).

[0038] The chamber 4 includes a box-shaped partition 6 having an inlet / outlet port 6b through which the substrate W passes, and a shutter 7 for opening and closing the inlet / outlet port 6b. The chamber 4 further includes a rectifying plate 8 disposed below an air outlet 6a that opens in the ceiling surface of the partition 6. An FFU 5 (fan filter unit) that supplies clean air (air filtered by a filter) is disposed above the air outlet 6a. An exhaust duct 9 that exhausts gas from the chamber 4 is connected to the processing cup 23. The air outlet 6a is disposed at the upper end of the chamber 4, and the exhaust duct 9 is disposed at the lower end of the chamber 4. A portion of the exhaust duct 9 is disposed outside the chamber 4.

[0039] The rectifying plate 8 divides the internal space of the partition wall 6 into an upper space Su above the rectifying plate 8 and a lower space SL below the rectifying plate 8. The upper space Su between the ceiling surface of the partition wall 6 and the upper surface of the rectifying plate 8 is a diffusion space in which clean air diffuses. The lower space SL between the lower surface of the rectifying plate 8 and the floor surface of the partition wall 6 is a processing space in which processing of the substrate W is performed. The spin chuck 10 and the processing cup 23 are disposed in the lower space SL. The vertical distance from the floor surface of the partition wall 6 to the lower surface of the rectifying plate 8 is longer than the vertical distance from the upper surface of the rectifying plate 8 to the ceiling surface of the partition wall 6.

[0040] The FFU 5 sends clean air to the upper space Su through the air outlet 6a. The clean air supplied to the upper space Su hits the rectifying plate 8 and diffuses in the upper space Su. The clean air in the upper space Su passes through a plurality of through-holes that penetrate the rectifying plate 8 from top to bottom, and flows downward from the entire area of the rectifying plate 8. The clean air supplied to the lower space SL is sucked into the processing cup 23 and discharged from the lower end of the chamber 4 through the exhaust duct 9. As a result, a uniform downward flow of clean air flowing downward from the rectifying plate 8 is formed in the lower space SL. The processing of the substrate W is performed with the downward flow of clean air being formed.

[0041] The spin chuck 10 includes a disk-shaped spin base 12 held in a horizontal position, a plurality of chuck pins 11 that hold the substrate W in a horizontal position above the spin base 12, a spin shaft 13 extending downward from the center of the spin base 12, and a spin motor 14 that rotates the spin shaft 13 to rotate the spin base 12 and the plurality of chuck pins 11. The spin chuck 10 is not limited to a clamping type chuck that brings the plurality of chuck pins 11 into contact with the outer peripheral surface of the substrate W, but may also be a vacuum type chuck that holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate W, which is the surface on which devices are not formed, to the upper surface 12u of the spin base 12.

[0042] The spin base 12 includes an upper surface 12u disposed below the substrate W. The upper surface 12u of the spin base 12 is parallel to the lower surface of the substrate W. The upper surface 12u of the spin base 12 is annular and surrounds the rotation axis A1. The outer diameter of the upper surface 12u of the spin base 12 is larger than the outer diameter of the substrate W. The chuck pins 11 protrude upward from the outer periphery of the upper surface 12u of the spin base 12. The chuck pins 11 are held by the spin base 12. The substrate W is held by the multiple chuck pins 11 with the lower surface of the substrate W spaced apart from the upper surface 12u of the spin base 12.

[0043] The processing unit 2 includes a lower surface nozzle 15 that ejects a processing liquid toward the center of the lower surface of the substrate W. The lower surface nozzle 15 includes a nozzle disk portion disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, and a nozzle cylinder portion extending downward from the nozzle disk portion. A liquid ejection port 15p of the lower surface nozzle 15 opens at the center of the upper surface of the nozzle disk portion. When the substrate W is held by the spin chuck 10, the liquid ejection port 15p of the lower surface nozzle 15 faces the center of the lower surface of the substrate W in the vertical direction.

[0044] The substrate processing apparatus 1 includes a rinse liquid pipe 16 that guides the rinse liquid to the lower surface nozzle 15, and a rinse liquid valve 17 that is disposed in the rinse liquid pipe 16. When the rinse liquid valve 17 is opened, the rinse liquid guided by the rinse liquid pipe 16 is discharged upward from the lower surface nozzle 15 and supplied to the center of the lower surface of the substrate W.

[0045] The rinse liquid supplied to the lower surface nozzle 15 is pure water (deionized water: DIW). The rinse liquid supplied to the lower surface nozzle 15 may be a liquid other than pure water. Specifically, the rinse liquid may be a liquid containing at least one of pure water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, diluted hydrochloric acid water (for example, about 10 to 100 ppm), and diluted ammonia water (for example, about 10 to 100 ppm), or may be a liquid other than these. The rinse liquid may be an organic solvent such as IPA (isopropyl alcohol).

[0046] Although not shown, the rinse liquid valve 17 includes a valve body having an internal flow path through which the liquid flows and an annular valve seat surrounding the internal flow path, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position in which the valve element contacts the valve seat and an open position in which the valve element is spaced from the valve seat. The same applies to the other valves. The actuator may be a pneumatic actuator, an electric actuator, or another type of actuator. The control device 3 opens and closes the rinse liquid valve 17 by controlling the actuator.

[0047] The outer peripheral surface of the lower nozzle 15 and the inner peripheral surface of the spin base 12 form a cylindrical passage 19 that extends vertically. The cylindrical passage 19 includes a central opening 18 that opens at the center of the upper surface 12u of the spin base 12. The central opening 18 is located below the nozzle disk portion of the lower nozzle 15. The substrate processing apparatus 1 includes a gas pipe 20 that guides the inert gas supplied to the central opening 18 via the cylindrical passage 19, a gas valve 21 installed in the gas pipe 20, and a flow rate adjustment valve 22 that changes the flow rate of the inert gas supplied from the gas pipe 20 to the cylindrical passage 19.

[0048] When gas valve 21 is opened, an inert gas such as nitrogen gas is supplied from gas pipe 20 to cylindrical passage 19 at a flow rate corresponding to the aperture of flow rate control valve 22, and is then discharged upward from central opening 18. The inert gas then flows radially in all directions through the space between the lower surface of substrate W and upper surface 12u of spin base 12. This fills the space between substrate W and spin base 12 with inert gas, reducing the oxygen concentration in the atmosphere. The oxygen concentration in the space between substrate W and spin base 12 is changed according to the aperture of gas valve 21 and flow rate control valve 22.

[0049] The processing cup 23 includes a plurality of guards 25 that receive liquid discharged outward from the substrate W, a plurality of cups 26 that receive liquid guided downward by the plurality of guards 25, and a cylindrical outer wall member 24 that surrounds the plurality of guards 25 and the plurality of cups 26. Figure 2 shows an example in which two guards 25 and two cups 26 are provided.

[0050] The guard 25 includes a cylindrical guard tubular portion 25b that surrounds the spin chuck 10 and an annular guard ceiling portion 25a that extends obliquely upward from the upper end of the guard tubular portion 25b toward the rotation axis A1. The multiple guard ceiling portions 25a are stacked one on top of the other, and the multiple guard tubular portions 25b are arranged concentrically. The multiple cups 26 are respectively arranged below the multiple guard tubular portions 25b. The cups 26 form annular liquid receiving grooves that open upward.

[0051] The processing unit 2 includes a guard lifting unit 27 that raises and lowers the multiple guards 25 individually. The guard lifting unit 27 positions the guards 25 at any position between the upper position and the lower position. The upper position is a position where the upper end 25u of the guard 25 is located above the holding position where the substrate W held by the spin chuck 10 is located. The lower position is a position where the upper end 25u of the guard 25 is located below the holding position. The annular upper end of the guard ceiling portion 25a corresponds to the upper end 25u of the guard 25. The upper end 25u of the guard 25 surrounds the substrate W and the spin base 12 in a plan view.

[0052] When a processing liquid is supplied to the substrate W while the spin chuck 10 is rotating the substrate W, the processing liquid supplied to the substrate W is shaken off from the substrate W. When the processing liquid is supplied to the substrate W, the upper end 25u of at least one guard 25 is positioned above the substrate W. Therefore, the processing liquid, such as a chemical liquid or a rinse liquid, discharged from the substrate W is received by one of the guards 25 and guided to the cup 26 corresponding to this guard 25.

[0053] 3, the processing unit 2 includes a lifting frame 32 disposed above the spin chuck 10, a blocking member 33 suspended from the lifting frame 32, a center nozzle 51 inserted into the blocking member 33, and a blocking member lifting unit 31 that raises and lowers the lifting frame 32, thereby raising and lowering the blocking member 33 and the center nozzle 51. The lifting frame 32, the blocking member 33, and the center nozzle 51 are disposed below the rectifying plate 8.

[0054] The blocking member 33 includes a disk portion 36 disposed above the spin chuck 10 and a cylindrical portion 37 extending downward from the outer periphery of the disk portion 36. The blocking member 33 includes an upwardly recessed, cup-shaped inner surface. The inner surface of the blocking member 33 includes a lower surface 62 of the disk portion 36 and an inner circumferential surface 64 of the cylindrical portion 37. Hereinafter, the lower surface 62 of the disk portion 36 may be referred to as the lower surface 62 of the blocking member 33.

[0055] The lower surface 62 of the disk portion 36 is a facing surface 62 that faces the upper surface of the substrate W. The lower surface 62 of the disk portion 36 is parallel to the upper surface of the substrate W. The inner circumferential surface 64 of the cylindrical portion 37 extends downward from the outer periphery of the lower surface 62 of the disk portion 36. The inner diameter of the cylindrical portion 37 increases toward the lower end of the inner circumferential surface 64 of the cylindrical portion 37. The inner diameter of the lower end of the inner circumferential surface 64 of the cylindrical portion 37 is larger than the diameter of the substrate W. The inner diameter of the lower end of the inner circumferential surface 64 of the cylindrical portion 37 may be larger than the outer diameter of the spin base 12. When the blocking member 33 is placed in a lower position (position shown in FIG. 2 ), which will be described later, the substrate W is surrounded by the inner circumferential surface 64 of the cylindrical portion 37.

[0056] The lower surface 62 of the disc portion 36 is annular and surrounds the rotation axis A1. The inner peripheral edge of the lower surface 62 of the disc portion 36 forms a central opening 38 that opens at the center of the lower surface 62 of the disc portion 36. The inner peripheral surface 61 of the blocking member 33 forms a through hole that extends upward from the central opening 38. The through hole of the blocking member 33 passes through the blocking member 33 in the vertical direction. The center nozzle 51 is inserted into the through hole of the blocking member 33. The outer diameter of the lower end of the center nozzle 51 is smaller than the diameter of the central opening 38.

[0057] The inner peripheral surface 61 of the blocking member 33 is coaxial with the outer peripheral surface of the center nozzle 51. The inner peripheral surface 61 of the blocking member 33 surrounds the outer peripheral surface of the center nozzle 51 at a distance in the radial direction (a direction perpendicular to the rotation axis A1). The inner peripheral surface 61 of the blocking member 33 and the outer peripheral surface of the center nozzle 51 form a cylindrical passage 39 extending vertically. The center nozzle 51 protrudes upward from the lifting frame 32 and the blocking member 33. When the blocking member 33 is suspended from the lifting frame 32, the lower end of the center nozzle 51 is positioned above the lower surface 62 of the disk portion 36. Processing liquids such as chemical solutions and rinse liquids are discharged downward from the lower end of the center nozzle 51.

[0058] The blocking member 33 includes a cylindrical connecting portion 35 extending upward from a disc portion 36, and an annular flange portion 34 extending outward from the upper end of the connecting portion 35. The flange portion 34 is disposed higher than the disc portion 36 and the cylindrical portion 37 of the blocking member 33. The flange portion 34 is parallel to the disc portion 36. The outer diameter of the flange portion 34 is smaller than the outer diameter of the cylindrical portion 37. The flange portion 34 is supported by a lower plate 32L of the lifting frame 32, which will be described later.

[0059] The lifting frame 32 includes an upper plate 32u located above the flange portion 34 of the blocking member 33, a side ring 32s extending downward from the upper plate 32u and surrounding the flange portion 34, and an annular lower plate 32L extending inward from the lower end of the side ring 32s and located below the flange portion 34 of the blocking member 33. The outer periphery of the flange portion 34 is disposed between the upper plate 32u and the lower plate 32L. The outer periphery of the flange portion 34 is movable up and down between the upper plate 32u and the lower plate 32L.

[0060] The lifting frame 32 and the blocking member 33 include positioning protrusions 41 and positioning holes 42 that restrict relative movement of the lifting frame 32 and the blocking member 33 in the circumferential direction (the direction around the rotation axis A1) when the blocking member 33 is supported by the lifting frame 32. Fig. 2 shows an example in which multiple positioning protrusions 41 are provided on the lower plate 32L and multiple positioning holes 42 are provided on the flange portion 34. The positioning protrusions 41 may also be provided on the flange portion 34 and the positioning holes 42 may also be provided on the lower plate 32L.

[0061] The positioning protrusions 41 are arranged on a circle whose center is located on the rotation axis A1. Similarly, the positioning holes 42 are arranged on a circle whose center is located on the rotation axis A1. The positioning holes 42 are arranged in the circumferential direction with the same regularity as the positioning protrusions 41. The positioning protrusions 41 protruding upward from the upper surface of the lower plate 32L are inserted into the positioning holes 42 extending upward from the lower surface of the flange portion 34. This restricts movement of the blocking member 33 in the circumferential direction relative to the lifting frame 32.

[0062] The blocking member 33 includes a plurality of upper support portions 43 that protrude downward from the inner surface of the blocking member 33. The spin chuck 10 includes a plurality of lower support portions 44 that respectively support the plurality of upper support portions 43. The plurality of upper support portions 43 are surrounded by the cylindrical portion 37 of the blocking member 33. The lower ends of the upper support portions 43 are located higher than the lower ends of the cylindrical portion 37. The radial distance from the rotation axis A1 to the upper support portions 43 is greater than the radius of the substrate W. Similarly, the radial distance from the rotation axis A1 to the lower support portions 44 is greater than the radius of the substrate W. The lower support portions 44 protrude upward from the upper surface 12u of the spin base 12. The lower support portions 44 are located outward of the chuck pins 11.

[0063] The upper support parts 43 are arranged on a circle whose center is located on the rotation axis A1. Similarly, the lower support parts 44 are arranged on a circle whose center is located on the rotation axis A1. The lower support parts 44 are arranged in the circumferential direction with the same regularity as the upper support parts 43. The lower support parts 44 rotate around the rotation axis A1 together with the spin base 12. The rotation angle of the spin base 12 is changed by the spin motor 14. When the spin base 12 is positioned at the reference rotation angle, the upper support parts 43 respectively overlap the lower support parts 44 in a plan view.

[0064] The blocking member lifting unit 31 is connected to the lifting frame 32. When the blocking member lifting unit 31 lowers the lifting frame 32 in a state where the flange portion 34 of the blocking member 33 is supported by the lower plate 32L of the lifting frame 32, the blocking member 33 also lowers. When the spin base 12 is positioned at a reference rotation angle where the multiple upper support portions 43 respectively overlap the multiple lower support portions 44 in a plan view, when the blocking member lifting unit 31 lowers the blocking member 33, the lower end portions of the upper support portions 43 come into contact with the upper end portions of the lower support portions 44. As a result, the multiple upper support portions 43 are supported by the multiple lower support portions 44, respectively.

[0065] When the shielding member lifting unit 31 lowers the lifting frame 32 after the upper support portion 43 of the shielding member 33 comes into contact with the lower support portion 44 of the spin chuck 10, the lower plate 32L of the lifting frame 32 moves downward relative to the flange portion 34 of the shielding member 33. As a result, the lower plate 32L moves away from the flange portion 34, and the positioning protrusions 41 come out of the positioning holes 42. Furthermore, since the lifting frame 32 and the center nozzle 51 move downward relative to the shielding member 33, the height difference between the lower end of the center nozzle 51 and the lower surface 62 of the disk portion 36 of the shielding member 33 decreases. At this time, the lifting frame 32 is positioned at a height (a lower position, described later) at which the flange portion 34 of the shielding member 33 does not come into contact with the upper plate 32u of the lifting frame 32.

[0066] The blocking member lifting unit 31 positions the lifting frame 32 at any position between the upper position (the position shown in FIG. 3) and the lower position (the position shown in FIG. 2). The upper position is a position where the positioning protrusions 41 are inserted into the positioning holes 42 and the flange portions 34 of the blocking member 33 are in contact with the lower plate 32L of the lifting frame 32. In other words, the upper position is a position where the blocking member 33 is suspended from the lifting frame 32. The lower position is a position where the lower plate 32L is separated from the flange portions 34 and the positioning protrusions 41 are removed from the positioning holes 42. In other words, the lower position is a position where the connection between the lifting frame 32 and the blocking member 33 is released and the blocking member 33 is not in contact with any part of the lifting frame 32.

[0067] When the lifting frame 32 and the shielding member 33 are moved to the lower position, the lower end of the cylindrical portion 37 of the shielding member 33 is positioned lower than the lower surface of the substrate W, and the space between the upper surface of the substrate W and the lower surface 62 of the shielding member 33 is surrounded by the cylindrical portion 37 of the shielding member 33. Therefore, the space between the upper surface of the substrate W and the lower surface 62 of the shielding member 33 is sealed not only from the atmosphere above the shielding member 33, but also from the atmosphere around the shielding member 33. This makes it possible to improve the airtightness of the space between the upper surface of the substrate W and the lower surface 62 of the shielding member 33.

[0068] Furthermore, when the lift frame 32 and the blocking member 33 are positioned in the lower position, the blocking member 33 will not collide with the lift frame 32 even if it is rotated about the rotation axis A1 relative to the lift frame 32. When the upper support portion 43 of the blocking member 33 is supported by the lower support portion 44 of the spin chuck 10, the upper support portion 43 and the lower support portion 44 mesh with each other, restricting relative movement of the upper support portion 43 and the lower support portion 44 in the circumferential direction. When the spin motor 14 rotates in this state, the torque of the spin motor 14 is transmitted to the blocking member 33 via the upper support portion 43 and the lower support portion 44. As a result, the blocking member 33 rotates in the same direction and at the same speed as the spin base 12, with the lift frame 32 and the central nozzle 51 stationary.

[0069] The central nozzle 51 includes at least one liquid outlet for discharging a liquid and at least one gas outlet for discharging a gas. As shown in Fig. 3, the at least one liquid outlet includes a downward outlet 52 for discharging a processing liquid such as a chemical liquid or a rinse liquid, and a sideways outlet 53 for discharging a processing liquid such as a chemical liquid or a rinse liquid. The at least one gas outlet includes a gas outlet 54 for discharging a gas. The downward outlet 52 opens at the bottom surface of the central nozzle 51. The sideways outlet 53 and the gas outlet 54 open at the outer circumferential surface of the central nozzle 51.

[0070] Downward discharge port 52 is connected to first chemical liquid pipe 55p that guides the chemical liquid toward downward discharge port 52 and first rinse liquid pipe 56p that guides the rinse liquid toward downward discharge port 52. First chemical liquid valve 55v and flow rate adjustment valve 55f are provided in first chemical liquid pipe 55p. First rinse liquid valve 56v and flow rate adjustment valve 56f are provided in first rinse liquid pipe 56p.

[0071] When first chemical liquid valve 55v is opened, the chemical liquid is supplied from first chemical liquid pipe 55p to downward discharge port 52 at a flow rate corresponding to the aperture of flow rate adjustment valve 55f, and is discharged from downward discharge port 52. When first rinse liquid valve 56v is opened, the rinse liquid is supplied from first rinse liquid pipe 56p to downward discharge port 52 at a flow rate corresponding to the aperture of flow rate adjustment valve 56f, and is discharged from downward discharge port 52.

[0072] Horizontal discharge port 53 is connected to second chemical liquid pipe 57p that guides the chemical liquid toward horizontal discharge port 53 and second rinse liquid pipe 58p that guides the rinse liquid toward horizontal discharge port 53. Second chemical liquid valve 57v and flow rate adjustment valve 57f are provided in second chemical liquid pipe 57p. Second rinse liquid valve 58v and flow rate adjustment valve 58f are provided in second rinse liquid pipe 58p.

[0073] When second chemical liquid valve 57v is opened, the chemical liquid is supplied from second chemical liquid pipe 57p to horizontal discharge port 53 at a flow rate corresponding to the aperture of flow rate adjustment valve 57f, and is discharged from horizontal discharge port 53. When second rinse liquid valve 58v is opened, the rinse liquid is supplied from second rinse liquid pipe 58p to horizontal discharge port 53 at a flow rate corresponding to the aperture of flow rate adjustment valve 58f, and is discharged from horizontal discharge port 53.

[0074] First chemical liquid valve 55v and first rinse liquid valve 56v are examples of first valves. Second chemical liquid valve 57v and second rinse liquid valve 58v are examples of second valves. Second chemical liquid valve 57v is also an example of a chemical liquid valve, and second rinse liquid valve 58v is also an example of a rinse liquid valve. When first chemical liquid valve 55v is open, it is in a discharge execution state in which downward discharge port 52 discharges the chemical liquid, and when first chemical liquid valve 55v is closed, it is in a discharge stop state in which downward discharge port 52 stops discharging the chemical liquid. The same applies to first rinse liquid valve 56v, second chemical liquid valve 57v, and second rinse liquid valve 58v.

[0075] The chemical liquid discharged from the downward discharge port 52 and the lateral discharge port 53 is, for example, an etching liquid such as hydrofluoric acid. The chemical liquid may be a liquid other than hydrofluoric acid. Specifically, the chemical liquid may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide, organic acid (e.g., citric acid, oxalic acid, etc.), organic alkali (e.g., TMAH (tetramethylammonium hydroxide)), surfactant, and corrosion inhibitor, or may be a liquid other than these. Sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide, citric acid, oxalic acid, and TMAH are also etching liquids. Chemical liquids differing in at least one of components and concentrations may be discharged from the downward discharge port 52 and the lateral discharge port 53.

[0076] The rinse liquid discharged from the downward discharge port 52 and the lateral discharge port 53 is pure water. The rinse liquid may be a liquid other than pure water. Specifically, the rinse liquid may be a liquid containing at least one of pure water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, hydrochloric acid water with a diluted concentration (for example, about 10 to 100 ppm), and ammonia water with a diluted concentration (for example, about 10 to 100 ppm), or may be a liquid other than these. The rinse liquid may be an organic solvent such as IPA. Rinse liquids with different components and / or concentrations may be discharged from the downward discharge port 52 and the lateral discharge port 53.

[0077] The gas discharge port 54 is connected to a gas pipe 59p that guides gas toward the gas discharge port 54. A gas valve 59v and a flow rate control valve 59f are provided in the gas pipe 59p. When the gas valve 59v is opened, an inert gas such as nitrogen gas is supplied from the gas pipe 59p to the gas discharge port 54 at a flow rate that corresponds to the opening of the flow rate control valve 59f, and is discharged from the gas discharge port 54.

[0078] The inert gas discharged from the gas discharge port 54 flows circumferentially within the cylindrical passage 39 and then flows downward within the cylindrical passage 39. When the inert gas reaches the lower end of the cylindrical passage 39, it flows downward from the lower end of the cylindrical passage 39. The inert gas then flows radially in all directions through the space between the upper surface of the substrate W and the lower surface 62 of the blocking member 33. This fills the space between the substrate W and the blocking member 33 with inert gas, reducing the oxygen concentration in the atmosphere. The oxygen concentration in the space between the substrate W and the blocking member 33 is changed depending on the opening of the gas valve 59v and the flow rate adjustment valve 59f.

[0079] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0080] FIG. 4 is a block diagram showing the electrical configuration of the substrate processing apparatus 1. As shown in FIG.

[0081] The control device 3 is a computer including a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various commands and a memory 3c that stores information. The peripheral device 3d includes a storage 3e that stores information such as a program P, a reader 3f that reads information from removable media RM, and a communication device 3g that communicates with other devices such as a host computer.

[0082] The control device 3 is connected to an input device and a display device. The input device is operated when an operator such as a user or a maintenance technician inputs information into the substrate processing apparatus 1. The information is displayed on the screen of the display device. The input device may be any of a keyboard, a pointing device, and a touch panel, or may be other devices. The substrate processing apparatus 1 may be provided with a touch panel display that serves as both an input device and a display device.

[0083] The CPU 3b executes a program P stored in the storage 3e. The program P in the storage 3e may be one that has been pre-installed in the control device 3, or may be one that has been sent from a removable medium RM to the storage 3e via a reader 3f, or may be one that has been sent from an external device such as a host computer to the storage 3e via a communication device 3g.

[0084] The storage 3e and removable medium RM are non-volatile memories that retain their memory even when power is not supplied. The storage 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. The removable medium RM is a non-transitory tangible recording medium.

[0085] The storage 3e stores a plurality of recipes. A recipe is information that specifies the processing content, processing conditions, and processing procedure of the substrate W. The plurality of recipes differ from one another in at least one of the processing content, processing conditions, and processing procedure of the substrate W. The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed in accordance with the recipe specified by the host computer. The control device 3 is programmed to execute each process described below.

[0086] Next, an example of processing the substrate W will be described.

[0087] 5 is a process diagram for explaining an example of processing of a substrate W performed by the substrate processing apparatus 1. In the following, reference will be made to FIGS. 1A, 2, and 3. FIG.

[0088] When a substrate W is processed by the substrate processing apparatus 1, a loading step of loading the substrate W into the chamber 4 is performed (step S1 in FIG. 5).

[0089] Specifically, with the lift frame 32 and the blocking member 33 in the upper position and all the guards 25 in the lower position, the center robot CR supports the substrate W with the hand H1 and causes the hand H1 to enter the chamber 4. Then, the center robot CR places the substrate W on the hand H1 on the multiple chuck pins 11 with the surface of the substrate W facing upward. The multiple chuck pins 11 are then pressed against the outer peripheral surface of the substrate W, thereby gripping the substrate W. After placing the substrate W on the spin chuck 10, the center robot CR retracts the hand H1 from the interior of the chamber 4.

[0090] Next, gas valves 59v and 21 are opened, and nitrogen gas begins to be discharged from the central opening 38 of the blocking member 33 and the central opening 18 of the spin base 12. This reduces the oxygen concentration in the atmosphere in contact with the substrate W. Furthermore, the blocking member lifting unit 31 lowers the lifting frame 32 from the upper position to the lower position, and the guard lifting unit 27 raises one of the guards 25 from the lower position to the upper position. At this time, the spin base 12 is held at a reference rotation angle at which the multiple upper support parts 43 overlap the multiple lower support parts 44 in a plan view. Therefore, the upper support parts 43 of the blocking member 33 are supported by the lower support parts 44 of the spin base 12, and the blocking member 33 moves away from the lifting frame 32. The spin motor 14 is then driven, and rotation of the substrate W begins (step S2 in FIG. 5).

[0091] Next, a chemical supplying step is performed in which hydrofluoric acid, which is an example of a chemical, is supplied to the upper surface of the substrate W (step S3 in FIG. 5).

[0092] Specifically, with blocking member 33 in the lower position, first chemical liquid valve 55v and second chemical liquid valve 57v are opened, and central nozzle 51 begins to discharge hydrofluoric acid. The hydrofluoric acid discharged from central nozzle 51 collides with the center of the upper surface of substrate W, and then flows outward along the upper surface of substrate W as it rotates. This forms a liquid film of hydrofluoric acid that covers the entire upper surface of substrate W, and hydrofluoric acid is supplied to the entire upper surface of substrate W. When a predetermined time has elapsed since first chemical liquid valve 55v and second chemical liquid valve 57v were opened, first chemical liquid valve 55v and second chemical liquid valve 57v are closed, and the discharge of hydrofluoric acid is stopped.

[0093] Next, a rinse liquid supplying step is performed in which pure water, which is an example of a rinse liquid, is supplied to the upper surface of the substrate W (step S4 in FIG. 5).

[0094] Specifically, with the blocking member 33 in the lower position, the first rinse liquid valve 56v and the second rinse liquid valve 58v are opened, and the central nozzle 51 begins to discharge pure water. The pure water that strikes the center of the upper surface of the substrate W flows outward along the upper surface of the rotating substrate W. The hydrofluoric acid on the substrate W is washed away by the pure water discharged from the central nozzle 51. As a result, a liquid film of pure water is formed that covers the entire upper surface of the substrate W. When a predetermined time has elapsed since the first rinse liquid valve 56v and the second rinse liquid valve 58v were opened, the first rinse liquid valve 56v and the second rinse liquid valve 58v are closed, and the discharge of pure water is stopped.

[0095] Next, a drying step is performed in which the substrate W is dried by rotating the substrate W (step S5 in FIG. 5).

[0096] Specifically, with the blocking member 33 in the lower position, the spin motor 14 accelerates the substrate W in the rotational direction, rotating the substrate W at a high rotational speed (e.g., several thousand rpm) that is higher than the rotational speed of the substrate W during the period from the chemical liquid supply step to the rinse liquid supply step. This removes the liquid from the substrate W, and the substrate W is dried. When a predetermined time has elapsed since the high-speed rotation of the substrate W began, the spin motor 14 stops its rotation. At this time, the spin motor 14 stops the spin base 12 at the reference rotation angle. This stops the rotation of the substrate W (step S6 in FIG. 5).

[0097] Next, an unloading step is performed in which the substrate W is unloaded from the chamber 4 (step S7 in FIG. 5).

[0098] Specifically, the shielding member lifting unit 31 raises the lifting frame 32 to the upper position, and the guard lifting unit 27 lowers all of the guards 25 to the lower position. Furthermore, the gas valves 59v and 21 are closed, and the central opening 38 of the shielding member 33 and the central opening 18 of the spin base 12 stop discharging nitrogen gas. The center robot CR then causes the hand H1 to enter the chamber 4. After the multiple chuck pins 11 release their grip on the substrate W, the center robot CR supports the substrate W on the spin chuck 10 with the hand H1. The center robot CR then retracts the hand H1 from the interior of the chamber 4 while still supporting the substrate W with the hand H1. This causes the processed substrate W to be removed from the chamber 4.

[0099] Next, the blocking member 33 and the central nozzle 51 will be described.

[0100] Fig. 6 is a schematic cross-sectional view showing a vertical cross section of the blocking member 33. Fig. 7 is a schematic view of the center nozzle 51. The upper side of Fig. 7 shows the outer peripheral surface of the center nozzle 51, and the lower side of Fig. 7 shows the bottom surface of the center nozzle 51. Fig. 6 shows the blocking member 33 in the lower position.

[0101] 6, the blocking member 33 includes a disk portion 36 disposed above the spin chuck 10 and a cylindrical portion 37 extending downward from the outer periphery of the disk portion 36. The blocking member 33 includes an upwardly recessed, cup-shaped inner surface. The inner surface of the blocking member 33 includes a lower surface 62 of the disk portion 36 and an inner circumferential surface 64 of the cylindrical portion 37. The lower surface 62 of the disk portion 36 faces the upper surface of the substrate W held by the spin chuck 10 in the vertical direction. Hereinafter, the lower surface 62 may be referred to as the facing surface 62.

[0102] The facing surface 62 of the blocking member 33 is a single annular plane extending horizontally from an inner peripheral edge 62i of the facing surface 62 to an outer peripheral edge 62o of the facing surface 62. The inner peripheral edge 62i and the outer peripheral edge of the facing surface 62 are both circles whose centers are located on the rotation axis A1 of the substrate W. The center of the facing surface 62 is located on the rotation axis A1. The outer diameter of the facing surface 62, i.e., the diameter of the outer peripheral edge 62o of the facing surface 62, may be equal to the diameter of the substrate W, or may be larger or smaller than the diameter of the substrate W.

[0103] As shown in Figure 7, the inner circumferential surface 61 of the blocking member 33 extends upward from the inner circumferential edge 62i of the opposing surface 62. The center line of the inner circumferential surface 61 of the blocking member 33 is located on the rotation axis A1. The inner circumferential surface 61 and the opposing surface 62 of the blocking member 33 form an annular corner portion surrounding the rotation axis A1. Figure 7 shows an example in which the vertical cross section of the corner portion is polygonal, and a cylindrical tapered portion 61t that narrows from the inner circumferential edge 62i of the opposing surface 62 toward the rotation axis A1, and a cylindrical vertical portion 61v that extends vertically upward from the upper end of the tapered portion 61t are provided on the inner circumferential surface 61 of the blocking member 33.

[0104] As shown in FIG. 6, the inner circumferential surface 64 of the cylindrical portion 37 extends downward from the outer circumferential edge 62o of the opposing surface 62. The center line of the inner circumferential surface 64 of the cylindrical portion 37 is located on the rotation axis A1. The inner circumferential surface 64 of the cylindrical portion 37 and the opposing surface 62 form an annular corner portion surrounding the rotation axis A1. FIG. 6 shows an example in which the vertical cross section of the corner portion is an inwardly convex arc. In this example, the rate at which the diameter of the inner circumferential surface 64 of the cylindrical portion 37 increases continuously as it moves downward from the outer circumferential edge 62o of the opposing surface 62.

[0105] The vertical cross section of the corner formed by the inner circumferential surface 64 and the opposing surface 62 of the tubular portion 37 may be a right angle, a polygon formed by vertical lines, horizontal lines, and lines tilted relative to these, or an inwardly convex arc. Similarly, the vertical cross section of the corner formed by the inner circumferential surface 61 and the opposing surface 62 of the blocking member 33 may be a right angle, a polygon formed by vertical lines, horizontal lines, and lines tilted relative to these, or an outwardly convex arc.

[0106] 7, the central nozzle 51 is inserted into a through hole formed by the inner circumferential surface 61 of the blocking member 33. As described above, the central nozzle 51 includes a downward outlet 52 for discharging a processing liquid such as a chemical solution or a rinse liquid, a lateral outlet 53 for discharging a processing liquid such as a chemical solution or a rinse liquid, and a gas outlet 54 for discharging an inert gas such as nitrogen gas. The downward outlet 52 opens at the bottom surface of the central nozzle 51. The lateral outlet 53 and the gas outlet 54 open at the outer circumferential surface of the central nozzle 51.

[0107] The lateral discharge port 53 discharges the processing liquid outward toward the opposing surface 62 when the blocking member 33 is positioned in the lower position (the state shown in FIGS. 6 and 7). As long as the processing liquid discharged from the lateral discharge port 53 is supplied to the opposing surface 62, the lateral discharge port 53 may discharge the processing liquid horizontally or obliquely upward or downward. FIGS. 6 and 7 show an example in which the lateral discharge port 53 discharges the processing liquid horizontally. When the blocking member 33 is positioned in the lower position, the lower end of the lateral discharge port 53 is positioned below the opposing surface 62, and the upper end of the lateral discharge port 53 is positioned above the opposing surface 62.

[0108] The control device 3 (see FIG. 1 ) rotates the blocking member 33 to be in the lower position and causes the processing liquid to be discharged from the horizontal discharge port 53. The processing liquid discharged from the horizontal discharge port 53 comes into contact with the opposing surface 62 via the tapered portion 61t of the inner circumferential surface 61 of the blocking member 33, or comes into contact with the opposing surface 62 without going through the tapered portion 61t. As a result, the processing liquid discharged from the horizontal discharge port 53 is supplied to the opposing surface 62 and flows outward along the opposing surface 62.

[0109] When the substrate W rotates, the blocking member 33 also rotates in the same direction and at the same speed as the substrate W, but the central nozzle 51 does not rotate even when the substrate W and the blocking member 33 rotate. When the blocking member 33 rotates 360 degrees or more after the lateral discharge port 53 starts to discharge the processing liquid, the processing liquid discharged from the lateral discharge port 53 is supplied to the entire circumference of the lower surface 62 of the blocking member 33. As a result, the entire area or almost the entire area of the lower surface 62 of the blocking member 33 is covered with a liquid film of the processing liquid.

[0110] Next, the protrusion 63 of the blocking member 33 will be described.

[0111] FIG. 8 is an enlarged view of a portion of FIG. 6. FIGS. 9A, 9B, and 9C are schematic views of the protrusion 63. FIG. 9A is a side view of the protrusion 63, FIG. 9B is a front view of the protrusion 63 (view of the protrusion 63 from the rotation axis A1 side), and FIG. 9C is a bottom view of the protrusion 63. FIG. 10 is a schematic view of the blocking member 33 as viewed from below. FIG. 11 is an enlarged view of a portion of FIG. 10. FIG. 8 shows the blocking member 33 in a state where it is positioned in the lower position. The upper support portion 43 and the lower support portion 44 (see FIG. 2) are omitted from FIGS. 10 and 11.

[0112] As shown in FIG. 8 and FIGS. 9A to 9C, the blocking member 33 includes a plurality of protrusions 63 that drop the processing liquid flowing outward along the opposing surface 62. The protrusions 63 protrude downward from the opposing surface 62. The protrusions 63 are integral with the blocking member 33. The protrusions 63 may be separate members connected to the blocking member 33. The plurality of protrusions 63 are spaced apart in the radial direction Dr (a horizontal direction perpendicular to the rotation axis A1). The outermost protrusions 63 are positioned inside the outer periphery of the substrate W.

[0113] As shown in FIGS. 10 and 11, the multiple protrusions 63 differ from one another in at least one of the central angle θ1 (see FIG. 11), which represents the angle from a reference line R1 (see FIG. 11) around the rotation axis A1, and the distance from the rotation axis A1. The reference line R1 is a fixed straight line corresponding to the radius 62r of the opposing surface 62. The central angle θ1 is the angle between the reference line R1 and a straight line extending from the rotation axis A1 to the center of the protrusion 63 in the circumferential direction Dc (a horizontal direction around the rotation axis A1). The distance from the rotation axis A1 is the distance in the radial direction Dr from the rotation axis A1 to the center of the protrusion 63 in the radial direction Dr. For example, the two innermost protrusions 63 are equally distant from the rotation axis A1 but have different central angles θ1 (the difference in central angles θ1 is 180 degrees).

[0114] The multiple protrusions 63 are arranged along one or more imaginary circles whose centers are located on the rotation axis A1. FIGS. 10 and 11 show an example in which 12 protrusions 63 are arranged along four imaginary circles C1 to C4 whose centers are located on the rotation axis A1. The two innermost protrusions 63 are arranged at equal intervals along the innermost imaginary circle C1. That is, the two innermost protrusions 63 are arranged at two positions that are 180 degrees apart around the rotation axis A1. The second innermost two protrusions 63 are arranged at equal intervals along the second innermost imaginary circle C2. The third innermost four protrusions 63 are arranged at equal intervals along the third innermost imaginary circle C3. The outermost four protrusions 63 are arranged at equal intervals along the outermost imaginary circle C4.

[0115] As shown in Fig. 10, two of the four outermost protrusions 63 are disposed outside the two innermost protrusions 63. The remaining two of the four outermost protrusions 63 are disposed outside the two second innermost protrusions 63. The four third innermost protrusions 63 are offset in the circumferential direction Dc from the other protrusions 63 and do not face the other protrusions 63 in the radial direction Dr. In other words, no protrusions 63 are provided on the outer or inner sides of the third innermost protrusion 63.

[0116] The multiple protrusions 63 other than the innermost protrusion 63 and the outermost protrusion 63 are arranged at multiple positions that are different distances from the rotation axis A1. The difference between the shortest distance from the rotation axis A1 to the innermost protrusion 63 and the shortest distance from the rotation axis A1 to the outermost protrusion 63 is greater than the diameter of the inner peripheral edge 62i of the facing surface 62. The shortest distance from the rotation axis A1 to the outermost protrusion 63 is shorter than the radius of the substrate W. The difference between the shortest distance from the rotation axis A1 to the outermost protrusion 63 and the radius of the substrate W may be smaller than the diameter of the inner peripheral edge 62i of the facing surface 62. The shortest distance from the rotation axis A1 to the innermost protrusion 63 may be shorter than the diameter of the inner peripheral edge 62i of the facing surface 62.

[0117] 11, when the opposing surface 62 is viewed from below, all of the protrusions 63 intersect with a radius 62r (a line segment extending from the rotation axis A1 to the outer peripheral edge 62o of the opposing surface 62) of the opposing surface 62. In the example shown in FIG. 11, the number of protrusions 63 intersecting with the radius 62r of the opposing surface 62 changes in the order of 2, 0, 1, 0 depending on the position in the circumferential direction Dc of the opposing surface 62, and this cycle of change is repeated (again, the number of protrusions 63 changes in the order of 2, 0, 1, 0).

[0118] Specifically, the radius 62r that intersects with the innermost protrusion 63 also intersects with the outermost protrusion 63, and this radius 62r intersects with two protrusions 63. The radius 62r that intersects with the third protrusion 63 from the inside does not intersect with any other protrusions 63, and this radius 62r intersects with one protrusion 63. The radius 62r that intersects with the second protrusion 63 from the inside also intersects with the outermost protrusion 63, and this radius 62r intersects with two protrusions 63. On both sides of the third protrusion 63 from the inside in the circumferential direction Dc, there are regions from the inner peripheral edge 62i of the opposing surface 62 to the outer peripheral edge 62o of the opposing surface 62 where no protrusions 63 are present.

[0119] As shown in Figure 10, all of the protrusions 63 are linear in the longitudinal direction, that is, along the tangents to the imaginary circles C1 to C4. The length of the protrusions 63 in the longitudinal direction (hereinafter simply referred to as "the length of the protrusions 63") is not uniform but varies. Specifically, the length of the outermost protrusion 63 is greater than the length of the innermost protrusion 63. The lengths of the protrusions 63 other than the innermost and outermost protrusions 63 are equal to or greater than the length of the innermost protrusion 63 and less than the length of the outermost protrusion 63. The length of the protrusions 63 may increase as the distance from the rotation axis A1 to the protrusions 63 increases.

[0120] No matter where in the longitudinal direction of the protrusion 63 the protrusion 63 is cut, the shape and area of the vertical cross section of the protrusion 63 do not change. Therefore, the protrusion amount 63h of the protrusion 63 (see FIG. 9A), that is, the length in the vertical direction from the opposing surface 62 to the lower end 63L of the protrusion 63, is constant from one end of the protrusion 63 in the longitudinal direction (the left-right direction on the paper in FIGS. 9B and 9C) to the other end of the protrusion 63 in the longitudinal direction of the protrusion 63. Furthermore, the shape and area of the vertical cross section of the protrusion 63 perpendicular to the longitudinal direction of the protrusion 63 are the same for all of the protrusions 63. Therefore, the protrusion amount 63h of the protrusion 63 is the same for all of the protrusions 63.

[0121] FIG. 8 shows an example in which the vertical cross section of the protrusion 63 perpendicular to the longitudinal direction of the protrusion 63 has a triangular shape in which the two sides other than the base are inclined with respect to the opposing surface 62. In this example, the angle formed by the two sides other than the base may be 90 degrees, or may be greater or less than 90 degrees. In other words, the vertical cross section of the protrusion 63 may be an acute triangle, an obtuse triangle, or a right triangle. The vertical cross section of the protrusion 63 may be an equilateral triangle, an isosceles triangle, or any other triangle. In addition, the lower end of the vertical cross section of the protrusion 63 may be V-shaped or may have a downwardly convex arc shape.

[0122] As shown in FIG. 9A, similar to the vertical cross section of the protrusion 63, the side surface 63s of the protrusion 63 has a triangular shape in which two sides other than the base are inclined relative to the opposing surface 62. As shown in FIG. 9B, the front surface 63f (the surface on the rotation axis A1 side) of the protrusion 63 has a rectangular shape that is elongated in the horizontal direction. As shown in FIG. 9C, the back surface 63b (the surface opposite the rotation axis A1) of the protrusion 63 also has a rectangular shape that is elongated in the horizontal direction. As shown in FIG. 9B, the lower edge 63e of the protrusion 63 (a continuous line passing through the lower ends of all vertical cross sections of one protrusion 63) is parallel to the opposing surface 62. Therefore, the vertical distance from the opposing surface 62 to the lower edge 63e of the protrusion 63 is constant from one end of the protrusion 63 in the longitudinal direction of the protrusion 63 to the other end of the protrusion 63 in the longitudinal direction of the protrusion 63.

[0123] 8, when the blocking member 33 is located in the lower position, the protrusion 63 is spaced upward from the upper surface of the substrate W. Therefore, the protrusion amount 63h of the protrusion 63 (see FIG. 9A) is smaller than the vertical distance from the upper surface of the substrate W to the facing surface 62. The protrusion amount 63h of the protrusion 63 is set so that the protrusion 63 is spaced upward from the liquid film when the blocking member 33 is located in the lower position and the liquid film is on the upper surface of the substrate W. When the diameter of the substrate W is 300 mm, the protrusion amount 63h of the protrusion 63 is, for example, 1.0 to 3.0 mm. However, the protrusion amount 63h of the protrusion 63 is not limited to this.

[0124] Next, supply of the processing liquid to the substrate W and the blocking member 33 will be described.

[0125] Fig. 12 is a schematic cross-sectional view showing a state in which the downward discharge port 52 is discharging the chemical liquid. Fig. 13 is a schematic cross-sectional view showing a state in which the downward discharge port 52 and the lateral discharge port 53 are discharging the chemical liquid. Fig. 14 is a schematic cross-sectional view showing a state in which the lateral discharge port 53 is discharging the rinse liquid. Fig. 15 is a schematic cross-sectional view showing a state in which the downward discharge port 52 and the lateral discharge port 53 are discharging the rinse liquid. Figs. 12 to 15 show a state in which the blocking member 33 is located in the lower position.

[0126] 12 and 13, when the chemical liquid supplying step (step S3 in FIG. 5) is performed, controller 3 (see FIG. 1) opens first chemical liquid valve 55v and second chemical liquid valve 57v with blocking member 33 in the lower position and blocking member 33 rotating together with substrate W, to cause downward discharge port 52 and lateral discharge port 53 of central nozzle 51 to start discharging the chemical liquid. Controller 3 may open second chemical liquid valve 57v simultaneously with opening first chemical liquid valve 55v, or may open second chemical liquid valve 57v before or after opening first chemical liquid valve 55v. FIGS. 12 and 13 show an example in which downward discharge port 52 starts discharging the chemical liquid, and then lateral discharge port 53 starts discharging the chemical liquid.

[0127] 12, when the control device 3 opens the first chemical liquid valve 55v, a chemical liquid such as hydrofluoric acid is discharged from the downward discharge port 52 of the central nozzle 51 toward the upper surface of the substrate W. The chemical liquid discharged from the downward discharge port 52 collides with the center of the upper surface of the rotating substrate W, flows over the upper surface of the substrate W to the outer periphery of the substrate W, and then splashes outward from the outer periphery of the substrate W. As a result, the chemical liquid discharged from the downward discharge port 52 is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical liquid is formed that covers the entire upper surface of the substrate W.

[0128] 13, when control device 3 opens second chemical liquid valve 57v, a chemical liquid such as hydrofluoric acid is discharged from horizontal discharge port 53 of central nozzle 51 toward opposing surface 62. Most of the chemical liquid discharged from horizontal discharge port 53 collides with tapered portion 61t or opposing surface 62, and then flows outward on opposing surface 62 to the outer periphery of opposing surface 62 due to the kinetic energy of the chemical liquid itself and centrifugal force. When blocking member 33 rotates 360 degrees or more after horizontal discharge port 53 starts to discharge the chemical liquid, the chemical liquid discharged from horizontal discharge port 53 is supplied to the entire circumference of opposing surface 62, and the entire area or almost the entire area of opposing surface 62 is covered with a liquid film of the chemical liquid.

[0129] The chemical liquid supplied from the lateral discharge port 53 to the facing surface 62 flows outward along the facing surface 62 and collides with the multiple protrusions 63 protruding downward from the facing surface 62. The multiple protrusions 63 provide resistance to the chemical liquid flowing outward along the facing surface 62. The multiple protrusions 63 obstruct the flow of the chemical liquid running outward along the facing surface 62. Due to these effects, some of the chemical liquid does not reach the outer periphery of the facing surface 62, but leaves the facing surface 62 at or near the multiple protrusions 63, and falls onto the substrate W. Thereafter, this chemical liquid, together with the chemical liquid discharged from the downward discharge port 52, flows over the upper surface of the substrate W to the outer periphery of the substrate W and splashes outward from the outer periphery of the substrate W.

[0130] The chemical liquid that leaves the facing surface 62 at or near the multiple protrusions 63 forms numerous droplets that fall randomly onto the substrate W. These droplets first contact the top surface of the substrate W outside the central portion of the substrate W. Therefore, the top surface of the substrate W can be processed more uniformly than when the chemical liquid first contacts the top surface of the substrate W only at the central portion of the top surface of the substrate W. For example, if the chemical liquid is an etching liquid, the variation in the amount of etching on the top surface of the substrate W can be reduced.

[0131] As described above, the shortest distance from the rotation axis A1 to each protrusion 63 includes at least four values, and the distribution of the protrusions 63 is wide in the radial direction Dr of the facing surface 62. Therefore, the range over which droplets of the chemical solution fall from the facing surface 62 can be widened in the radial direction Dr of the facing surface 62, and the droplets of the chemical solution falling from the facing surface 62 can land over a wide range from the center of the upper surface of the substrate W to the outer periphery of the upper surface of the substrate W. By appropriately setting the number and distribution of the protrusions 63, the droplets of the chemical solution falling from the facing surface 62 can land over almost the entire upper surface of the substrate W. This allows the upper surface of the substrate W to be treated more uniformly.

[0132] When a predetermined time has elapsed since the start of discharge of the chemical liquid, controller 3 closes first chemical liquid valve 55v and second chemical liquid valve 57v, and stops discharge of the chemical liquid from downward discharge port 52 and lateral discharge port 53. Controller 3 may close second chemical liquid valve 57v at the same time as closing first chemical liquid valve 55v, or may close second chemical liquid valve 57v before or after closing first chemical liquid valve 55v. After stopping discharge of the chemical liquid, controller 3 performs the next step, that is, the rinse liquid supply step (step S4 in FIG. 5).

[0133] 14 and 15, when the rinse liquid supplying step (step S4 in FIG. 5) is performed, the control device 3 opens the first rinse liquid valve 56v and the second rinse liquid valve 58v to cause the downward discharge port 52 and the lateral discharge port 53 of the central nozzle 51 to start discharging the rinse liquid while the blocking member 33 is in the lower position, the blocking member 33 is rotating together with the substrate W, and the entire upper surface of the substrate W is covered with a liquid film of the chemical liquid. The control device 3 may open the second rinse liquid valve 58v simultaneously with opening the first rinse liquid valve 56v, or may open the second rinse liquid valve 58v before or after opening the first rinse liquid valve 56v. FIGS. 14 and 15 show an example in which the downward discharge port 52 starts discharging the rinse liquid after the lateral discharge port 53 starts discharging the rinse liquid.

[0134] 14, when the control device 3 opens the second rinse liquid valve 58v, rinse liquid such as pure water is discharged from the horizontal discharge port 53 of the central nozzle 51 toward the opposing surface 62. Most of the rinse liquid discharged from the horizontal discharge port 53 collides with the tapered portion 61t or the opposing surface 62, and then flows outward on the opposing surface 62 to the outer periphery of the opposing surface 62 due to the kinetic energy of the rinse liquid itself and centrifugal force. When the blocking member 33 rotates 360 degrees or more after the horizontal discharge port 53 starts to discharge the rinse liquid, the rinse liquid discharged from the horizontal discharge port 53 is supplied to the entire circumference of the opposing surface 62, and the entire area or almost the entire area of the opposing surface 62 is covered with a liquid film of the rinse liquid.

[0135] 15, when the control device 3 opens the first rinse liquid valve 56v, a rinse liquid such as pure water is discharged from the downward discharge port 52 of the central nozzle 51 toward the upper surface of the substrate W. The rinse liquid discharged from the downward discharge port 52 collides with the center of the upper surface of the rotating substrate W, flows over the upper surface of the substrate W to the outer periphery of the substrate W, and then splashes outward from the outer periphery of the substrate W. As a result, the chemical liquid on the substrate W is washed away by the rinse liquid discharged from the downward discharge port 52, and a liquid film of the rinse liquid is formed that covers the entire upper surface of the substrate W.

[0136] In this way, by discharging the rinse liquid from the lateral discharge port 53 while rotating the shielding member 33, the rinse liquid can be supplied to the entire or almost entire area of the facing surface 62, and the chemical liquid adhering to the shielding member 33 can be washed away with the rinse liquid discharged from the lateral discharge port 53. Therefore, by discharging the rinse liquid from both the downward discharge port 52 and the lateral discharge port 53, the chemical liquid adhering to the shielding member 33 can be washed away with the rinse liquid discharged from the downward discharge port 52 and the lateral discharge port 53, while the chemical liquid adhering to the substrate W can be washed away with the rinse liquid discharged from the downward discharge port 52 and the lateral discharge port 53.

[0137] The rinse liquid supplied from the lateral discharge port 53 to the facing surface 62 flows outward along the facing surface 62 and collides with the multiple protrusions 63. The multiple protrusions 63 provide resistance to the rinse liquid flowing outward along the facing surface 62. The multiple protrusions 63 obstruct the flow of the rinse liquid flowing outward along the facing surface 62. Due to these effects, some of the rinse liquid does not reach the outer periphery of the facing surface 62, but leaves the facing surface 62 at or near the multiple protrusions 63 and falls onto the substrate W. Thereafter, this rinse liquid, together with the rinse liquid discharged from the downward discharge port 52, flows over the upper surface of the substrate W to the outer periphery of the substrate W and splashes outward from the outer periphery of the substrate W.

[0138] The rinse liquid that leaves the facing surface 62 at or near the multiple protrusions 63 forms numerous droplets that fall randomly onto the substrate W. These droplets first contact the top surface of the substrate W not at the center of the substrate W but at the outer edge of the substrate W. Furthermore, when the rinse liquid falls onto the substrate W, an impact is applied to the liquid film of the rinse liquid on the substrate W, causing a change in the flow of the rinse liquid flowing outward across the top surface of the substrate W. Due to these effects, the top surface of the substrate W can be treated more uniformly and the amount of residual chemical liquid can be reduced compared to when the rinse liquid first contacts the top surface of the substrate W only at the center of the top surface of the substrate W.

[0139] As described above, the shortest distance from the rotation axis A1 to each protrusion 63 includes at least four values, and the distribution of the protrusions 63 is wide in the radial direction Dr of the facing surface 62. Therefore, the range over which droplets of the rinsing liquid fall from the facing surface 62 can be widened in the radial direction Dr of the facing surface 62, and the droplets of the rinsing liquid falling from the facing surface 62 can land over a wide range from the center of the upper surface of the substrate W to the outer periphery of the upper surface of the substrate W. By appropriately setting the number and distribution of the protrusions 63, the droplets of the rinsing liquid falling from the facing surface 62 can land over almost the entire upper surface of the substrate W. This allows the upper surface of the substrate W to be processed more uniformly.

[0140] If the chemical liquid on the substrate W is rinsed away with the rinse liquid discharged from the downward discharge port 52 before the chemical liquid adhering to the facing surface 62 is rinsed away with the rinse liquid discharged from the lateral discharge port 53, the chemical liquid may fall from the facing surface 62 onto the substrate W and mix with the rinse liquid on the substrate W. If this is undesirable, the first rinse liquid valve 56v may be opened after the second rinse liquid valve 58v is opened. In this way, the amount of chemical liquid falling from the facing surface 62 after the chemical liquid on the substrate W is rinsed away with the rinse liquid can be reduced.

[0141] When a predetermined time has elapsed since the start of discharge of the rinse liquid, the control device 3 closes the first rinse liquid valve 56v and the second rinse liquid valve 58v, thereby stopping the discharge of the rinse liquid from the downward discharge port 52 and the lateral discharge port 53. The control device 3 may close the second rinse liquid valve 58v at the same time as closing the first rinse liquid valve 56v, or may close the second rinse liquid valve 58v before or after closing the first rinse liquid valve 56v. After stopping the discharge of the rinse liquid, the control device 3 performs the next step, that is, the drying step (step S5 in FIG. 5).

[0142] As described above, in this embodiment, the processing liquid is discharged from the lateral discharge port 53, which is located inside the inner peripheral edge 62i of the opposing surface 62 of the blocking member 33, to form a flow of processing liquid that flows outward along the opposing surface 62. When the blocking member 33 rotates relative to the lateral discharge port 53, the processing liquid discharged from the lateral discharge port 53 is supplied to the entire circumference of the opposing surface 62. The processing liquid that flows outward along the opposing surface 62 while in contact with the opposing surface 62 collides with the multiple protrusions 63 that protrude downward from the opposing surface 62. The multiple protrusions 63 provide resistance to the processing liquid that flows outward along the opposing surface 62 while in contact with the opposing surface 62. Due to these effects, some of the processing liquid does not reach the outer periphery of the opposing surface 62 and leaves the opposing surface 62 at or near the multiple protrusions 63.

[0143] The processing liquid that leaves the facing surface 62 at or near the multiple protrusions 63 forms a large number of droplets, which fall randomly onto the substrate W. These droplets first contact the top surface of the substrate W not at the center of the substrate W but outside of it. Furthermore, the distance from the center of the substrate W to the position where the droplet falls on the substrate W is not the same each time but varies randomly. Therefore, the top surface of the substrate W can be processed more uniformly than if the processing liquid first contacted the top surface of the substrate W only at the center of the top surface of the substrate W. This makes it possible to improve the uniformity of processing on the top surface of the substrate W without using a scan nozzle.

[0144] In this embodiment, at least two protrusions 63 are spaced apart in the circumferential direction Dc of the facing surface 62, which is a horizontal direction around the rotation axis A1. Therefore, the amount of processing liquid dropping from the facing surface 62 onto the substrate W can be increased compared to when at least two protrusions 63 are aligned in the radial direction Dr of the facing surface 62. Furthermore, the at least two protrusions 63 are also spaced apart in the radial direction Dr of the facing surface 62, which is a horizontal direction perpendicular to the rotation axis A1. Therefore, it is possible to forcibly change the distance from the center of the substrate W to the position where the droplets have dropped onto the substrate W.

[0145] In this embodiment, the number of protrusions 63 that intersect with the radius 62r of the facing surface 62 increases or decreases depending on the position in the circumferential direction Dc of the facing surface 62. For example, if N (N is a natural number) protrusions 63 are arranged on a certain radius of the facing surface 62, S (S is a natural number) protrusions 63, which is different from N, are arranged on another radius of the facing surface 62. The amount of processing liquid that drops from the facing surface 62 onto the substrate W changes depending on the number of protrusions 63 that intersect with the radius 62r of the facing surface 62. Therefore, the amount of processing liquid that drops from the facing surface 62 onto the substrate W can be increased or decreased depending on the position in the circumferential direction Dc of the facing surface 62.

[0146] In this embodiment, the processing liquid is discharged from the downward discharge port 52, which is located inside the inner peripheral edge 62i of the opposing surface 62 of the blocking member 33, to supply the processing liquid to the center of the upper surface of the substrate W. The control device 3 causes the downward discharge port 52 to start discharging the processing liquid, and then causes the lateral discharge port 53 to start discharging the processing liquid while the downward discharge port 52 is still discharging the processing liquid. Therefore, the upper surface of the substrate W is quickly covered with a liquid film of the processing liquid discharged from the downward discharge port 52, and then the processing liquid that has dropped from the opposing surface 62 can be supplied to the upper surface of the substrate W via the liquid film of the processing liquid. If there is a liquid on the substrate W other than the processing liquid discharged from the downward discharge port 52 and the lateral discharge port 53, this liquid can be quickly replaced with the processing liquid discharged from the downward discharge port 52.

[0147] In this embodiment, the processing liquid is discharged from the downward discharge port 52, which is located inside the inner peripheral edge 62i of the opposing surface 62 of the blocking member 33, to supply the processing liquid to the central part of the upper surface of the substrate W. The control device 3 causes the lateral discharge port 53 to start discharging the processing liquid, and then causes the downward discharge port 52 to start discharging the processing liquid while the lateral discharge port 53 is still discharging the processing liquid. Therefore, the processing liquid discharged from the lateral discharge port 53 can be supplied to the entire circumference of the opposing surface 62, and then the processing liquid discharged from the downward discharge port 52 can be supplied to the upper surface of the substrate W.

[0148] For example, if the processing liquid discharged from the downward discharge port 52 is supplied to the upper surface of the substrate W in a state in which a liquid other than the processing liquid discharged from the downward discharge port 52 and the lateral discharge port 53 is adhering to the facing surface 62, the other liquid may fall from the facing surface 62 and mix with the processing liquid on the substrate W. If the processing liquid is discharged from the lateral discharge port 53 before the downward discharge port 52 starts discharging the processing liquid, the liquid adhering to the facing surface 62 can be removed, and the mixing of the other liquid as described above can be prevented.

[0149] In this embodiment, the chemical liquid is discharged from the lateral discharge port 53 and dropped from the facing surface 62 onto the substrate W. Then, a rinse liquid is discharged from the lateral discharge port 53 and dropped from the facing surface 62 onto the substrate W. This allows the upper surface of the substrate W to be treated with the chemical liquid, and then the chemical liquid on the substrate W can be washed away with the rinse liquid. Furthermore, because the chemical liquid adhering to the facing surface 62 can be washed away with the rinse liquid, it is possible to prevent the chemical liquid from dropping from the facing surface 62 onto the substrate W after the chemical liquid on the substrate W has been washed away. In addition, since the rinse liquid is supplied to the substrate W and the facing surface 62 simultaneously, the substrate processing apparatus 1 can be operated efficiently.

[0150] In this embodiment, the inner peripheral surface 61 of the shielding member 33 surrounds the substrate W, with the opposing surface 62 of the shielding member 33 facing the upper surface of the substrate W. This makes it possible to shield the substrate W from the space above the shielding member 33 and the space around the shielding member 33. On the other hand, with such a shielding member 33, it is difficult to position a scan nozzle between the substrate W and the shielding member 33. Therefore, by using the lateral discharge port 53 and the multiple protrusions 63, it is possible to improve the sealing of the space between the substrate W and the shielding member 33, while also improving the uniformity of processing on the upper surface of the substrate W.

[0151] Other embodiments The present invention is not limited to the contents of the above-described embodiment, and various modifications are possible.

[0152] For example, the downward discharge port 52 and the sideways discharge port 53 may not be provided in the same nozzle (central nozzle 51) but may be provided in separate nozzles.

[0153] Instead of ejecting both the chemical liquid and the rinse liquid from the horizontal outlet 53, one of the chemical liquid and the rinse liquid may be ejected from the horizontal outlet 53, and the other of the chemical liquid and the rinse liquid may be ejected from an outlet other than the horizontal outlet 53.

[0154] The multiple protrusions 63 do not have to be spaced apart in the circumferential direction Dc and the radial direction Dr of the opposing surface 62, but may be spaced apart only in the circumferential direction Dc of the opposing surface 62 or only in the radial direction Dr of the opposing surface 62. Specifically, all of the protrusions 63 may be arranged along a single imaginary circle whose center is located on the rotation axis A1, or may intersect with a single radius 62r of the opposing surface 62.

[0155] The number of protrusions 63 intersecting with the radius 62r of the opposing surface 62 may be constant. In other words, the number of protrusions 63 intersecting with the radius 62r of the opposing surface 62 may alternate only between zero and a constant value depending on the position of the opposing surface 62 in the circumferential direction Dc.

[0156] The protrusion 63 may be a straight line inclined relative to the tangent line rather than a straight line along the tangent line of the imaginary circles C1 to C4 (see FIG. 10). The protrusion 63 may be an arc concentric with the opposing surface 62. The protrusion 63 may extend along a single continuous line including two or more straight lines or curved lines, or may extend along a single continuous line including straight lines and curved lines.

[0157] The protrusions 63 may not be linear extending along a single continuous line, but may be point-like, such as a hemisphere, a cylinder, or a prism. In other words, the protrusions 63 may have a shape that is rotationally symmetrical with respect to a vertical line. In this case, the multiple protrusions 63 may include one or more linear protrusions 63 and one or more point-like protrusions 63.

[0158] The vertical cross section of the protrusion 63 is not limited to a triangular shape in which the two sides other than the base are inclined relative to the opposing surface 62. For example, the vertical cross section of the protrusion 63 may be a right triangle with one side perpendicular to the opposing surface 62 (see FIG. 16A), or may be a polygonal shape such as a square or a rectangle (see FIG. 16B). The vertical cross section of the protrusion 63 may be formed by one or more curves, or may be formed by one or more straight lines and one or more curves. For example, the vertical cross section of the protrusion 63 may be formed by an arc extending downward from the opposing surface 62 and a straight line extending downward from the opposing surface 62 (see FIG. 16C). The left side of FIGS. 16A, 16B, and 16C is the rotation axis A1 side.

[0159] When the protrusion 63 is linear and extends along a single continuous line, the lower edge 63e of the protrusion 63 (a continuous line passing through the lower ends of all vertical cross sections of one protrusion 63) does not have to be parallel to the opposing surface 62. Figures 17A, 17B, and 17C show an example in which the lower edge 63e of the protrusion 63 is a broken line extending from one end of the protrusion 63 in the longitudinal direction of the protrusion 63 to the other end of the protrusion 63 in the longitudinal direction of the protrusion 63. Figures 17A, 17B, and 17C are a side view, a front view, and a bottom view of the protrusion 63, respectively.

[0160] The protrusion amounts 63h of the protrusions 63 (the vertical length from the opposing surface 62 to the lower ends 63L of the protrusions 63), which correspond to the heights of the protrusions 63, may not be the same for all of the protrusions 63, and may be uneven. Specifically, the protrusion amount 63h of each protrusion 63 may be different from the protrusion amounts 63h of all of the other protrusions 63, or the plurality of protrusions 63 may include two or more protrusions 63 with the same protrusion amount 63h and a protrusion 63 with a protrusion amount 63h different from the two or more protrusions 63.

[0161] For example, the protrusion amount 63h of the outermost protrusion 63 may be greater than the protrusion amount 63h of the innermost protrusion 63. In this case, the protrusion amounts 63h of the protrusions 63 other than the innermost protrusion 63 and the outermost protrusion 63 may be greater than or equal to the protrusion amount 63h of the innermost protrusion 63 and less than or equal to the protrusion amount 63h of the outermost protrusion 63. For example, as shown in FIG. 18 , the protrusion amounts 63h of the protrusions 63 may increase with increasing distance from the rotation axis A1.

[0162] All of the protrusions 63 arranged along the same imaginary circle (any of the imaginary circles C1 to C4) may have the same protrusion amount 63h, or may have non-uniform protrusion amounts 63h. In this case, all of the protrusions 63 arranged along one imaginary circle may have the same protrusion amount 63h, and all of the protrusions 63 arranged along another imaginary circle may have non-uniform protrusion amounts 63h. Alternatively, all of the protrusions 63 arranged along the same imaginary circle, regardless of which of the imaginary circles C1 to C4, may have non-uniform protrusion amounts 63h.

[0163] Each protrusion 63 applies resistance to the processing liquid flowing outward along the facing surface 62. As the protrusion amount 63h of the protrusion 63 increases, this resistance increases, and as the protrusion amount 63h of the protrusion 63 decreases, this resistance decreases. Therefore, by changing the protrusion amount 63h of the protrusion 63, it is possible to intentionally change the amount of processing liquid dropping from the facing surface 62 onto the substrate W. For example, by increasing the height of the protrusion 63 corresponding to the outer periphery of the substrate W, it is possible to increase the amount of processing liquid dropping onto the outer periphery of the top surface of the substrate W, thereby improving the uniformity of processing on the top surface of the substrate W.

[0164] The contact angle of water with at least one of the multiple protrusions 63 may be equal to the contact angle of water with the opposing surface 62, or may be larger or smaller than the contact angle of water with the opposing surface 62. In the latter case, the contact angles of water with all of the protrusions 63 may be the same or may be uneven. When the contact angle of water with the protrusions 63 is made larger than the contact angle of water with the opposing surface 62, the surface layer of the protrusions 63 may be made of a hydrophobic material whose contact angle of water is larger than the contact angle of water with the opposing surface 62, or the entire protrusions 63 may be made of a hydrophobic material.

[0165] 19 shows an example in which an insert pin 71 is inserted into a through-hole that passes vertically through the disk portion 36 of the blocking member 33. The insert pin 71 is fixed to the disk portion 36 and protrudes downward from the opposing surface 62. The lower end of the insert pin 71 corresponds to the protrusion 63. The surface of the lower end of the insert pin 71, which corresponds to the surface of the protrusion 63, is made of a hydrophobic material, and the opposing surface 62 is made of a hydrophilic material that has a smaller contact angle with water than the hydrophobic material.

[0166] The hydrophobic material may be either PFC (perfluorocarbon) or PTFE (polytetrafluoroethylene), or may be other materials. The hydrophilic material may be either polyvinyl chloride or PEEK (polyether ether ketone), or may be other materials. The contact angle of water with the protrusions 63 and the opposing surface 62 may be adjusted by surface treatment (such as adjusting the roughness) rather than by different materials.

[0167] If the contact angle of water with the protrusions 63 is higher than the contact angle of water with the facing surface 62, the processing liquid flowing outward along the facing surface 62 is more likely to fall off the protrusions 63. Therefore, by making the contact angle of water with the protrusions 63 larger than the contact angle of water with the facing surface 62, it is possible to intentionally increase the amount of processing liquid that falls from the facing surface 62 onto the substrate W.

[0168] The protrusion amount 63h of the protrusion 63 may not be constant but may be variable. Figures 20 and 21 show an example in which the protrusion amount 63h of the protrusion 63 is variable.

[0169] 20 and 21, the substrate processing apparatus 1 includes a diaphragm 73 that forms the protrusion 63 instead of the protrusion 63 shown in Fig. 8 etc., a fixing ring 72 that fixes a part of the diaphragm 73 to the opposing surface 62, a driven magnet 74 that presses the diaphragm 73 downward, and a magnet cover 75 that covers the driven magnet 74 from above. The substrate processing apparatus 1 further includes a drive magnet 76 that moves the drive magnet 76 downward by magnetic force, and an elevation actuator 77 that moves the drive magnet 76 up and down.

[0170] The lower surface 73L of the diaphragm 73 exposed from the fixing ring 72 is a horizontal plane. The lower surface 72L of the fixing ring 72 is also a horizontal plane. The lower surface 73L of the diaphragm 73 and the lower surface 72L of the fixing ring 72 are arranged on the same plane as the opposing surface 62. The diaphragm 73 elastically deforms between a flat state (the state shown in FIG. 20 ) in which the lower surface 73L of the diaphragm 73 is arranged on the same plane as the opposing surface 62, and a protruding state (the state shown in FIG. 21 ) in which the lower surface 73L of the diaphragm 73 protrudes downward from the opposing surface 62.

[0171] The driven magnet 74 is disposed above the diaphragm 73. The driven magnet 74 is movable up and down relative to the blocking member 33. The magnet cover 75 is disposed above the driven magnet 74. The driven magnet 74 is disposed in an enclosed space formed by the magnet cover 75, the blocking member 33, and the diaphragm 73. The driven magnet 74 and the magnet cover 75 move up and down together with the blocking member 33, and rotate together with the blocking member 33.

[0172] The drive magnet 76 is disposed above the magnet cover 75. When the lifting actuator 77 moves the drive magnet 76 closer to the driven magnet 74, the repulsive force acting between the drive magnet 76 and the driven magnet 74 increases, causing the driven magnet 74 to push the diaphragm 73 downward. This causes the diaphragm 73 to elastically deform, causing the lower surface 73L of the diaphragm 73 to protrude downward from the opposing surface 62, forming a protrusion 63. The protrusion amount 63h of the protrusion 63 increases as the distance between the driven magnet 74 and the drive magnet 76 decreases.

[0173] When the lifting actuator 77 moves the drive magnet 76 away from the driven magnet 74 while the diaphragm 73 protrudes downward from the opposing surface 62, the diaphragm 73 returns to its original shape and the protrusion 63 disappears. In other words, the lower surface 73L of the diaphragm 73 is positioned on the same plane as the opposing surface 62. As the diaphragm 73 returns to its original shape, the driven magnet 74 is pushed upward by the diaphragm 73 and returns to its original position.

[0174] The substrate processing apparatus 1 includes a plurality of diaphragms 73, driven magnets 74, etc. The plurality of diaphragms 73 are arranged along a plurality of imaginary circles C1 to C4 (see FIG. 10). The driving magnets 76 are ring-shaped and are provided for each of the imaginary circles C1 to C4. The position of each driving magnet 76 in the vertical direction can be set for each driving magnet 76. By individually setting the positions of the plurality of driving magnets 76, it is possible to make all the diaphragms 73 protrude by a uniform protrusion amount 63h, or to change the protrusion amount 63h of each of the plurality of diaphragms 73 depending on the distance from the rotation axis A1.

[0175] 20 and 21, if the protrusions 63 are not required, the diaphragms 73 may be flattened. In the case of a blocking member 33 and a spin chuck 10 shown in FIG. 22, in which the upper support portion 43 and the lower support portion 44 are not provided, by flattening all of the diaphragms 73, the facing surface 62 can be brought closer to the upper surface of the substrate W than when the upper support portion 43 and the lower support portion 44 are provided. For example, when drying the substrate W, all of the diaphragms 73 may be flattened, so that the facing surface 62 is brought closer to the upper surface of the substrate W than when a processing liquid is supplied to the upper surface of the substrate W. In this way, the oxygen contained in the atmosphere between the substrate W and the facing surface 62 can be further reduced.

[0176] As shown in Fig. 22, the cylindrical portion 37 may be omitted from the blocking member 33. The upper support portion 43 and the lower support portion 44 may be omitted from the blocking member 33 and the spin chuck 10. When the upper support portion 43 and the lower support portion 44 are omitted, a blocking member rotation unit 78 including an electric motor that rotates the blocking member 33 about the rotation axis A1 may be provided. In the example shown in Fig. 22, the center nozzle 51 moves up and down together with the blocking member 33, but does not rotate even when the blocking member 33 rotates.

[0177] The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, but may be an apparatus for processing a polygonal substrate W.

[0178] Any two or more of the above-mentioned features may be combined. Any two or more of the above-mentioned steps may be combined.

[0179] In addition, various design modifications can be made within the scope of the claims. [Explanation of symbols]

[0180] 1: Substrate processing equipment 3: Control device 10: Spin chuck (substrate holding means) 14: Spin motor (rotation means) 33: Blocking member 38: Central opening 52: Downward outlet 53: Horizontal outlet 55v: First chemical valve (first valve) 56v: 1st rinse liquid valve (1st valve) 57p: Second chemical liquid piping (chemical liquid piping) 57v: Second chemical valve (Second valve, chemical valve) 58p: Second rinse liquid piping (rinse liquid piping) 58v: Second rinse liquid valve (Second valve, rinse liquid valve) 62: Opposing surface (bottom surface of blocking member and disc portion) 62i: Inner edge of opposing surface 62o: Outer edge of the opposing surface 62r: Radius of the opposing surface 63: Protrusion 63h: Projection amount of the protrusion 64: Inner surface of cylindrical part 71: Insert pin 73: Diaphragm 78: Shut-off member rotation unit (rotation means) A1: Rotation axis Dc: Circumferential direction of the opposing surface Dr: Radial direction of opposing surface W: Substrate

Claims

1. a substrate holding means for holding the substrate horizontally; a blocking member including: an opposing surface facing an upper surface of the substrate held by the substrate holding means; a central opening opening in the opposing surface; and a plurality of protrusions protruding downward from the opposing surface to cause the processing liquid flowing outward along the opposing surface to fall onto the upper surface of the substrate; a lateral discharge port that is disposed inside an inner peripheral edge of the opposing surface that forms the central opening, and that discharges the treatment liquid in a horizontal direction or a direction inclined relative to the horizontal direction, thereby forming a flow of the treatment liquid that flows outward along the opposing surface; a rotation means for rotating the blocking member relative to the horizontal discharge port about a vertical axis of rotation passing through a center of the substrate.

2. The substrate processing apparatus according to claim 1 , wherein at least two of the plurality of protrusions are spaced apart from each other in the circumferential and radial directions of the opposing surface.

3. 3 . The substrate processing apparatus according to claim 1 , wherein the number of the protrusions intersecting the radius of the opposing surface varies within a range of natural numbers depending on the position in the circumferential direction of the opposing surface.

4. a downward discharge port that is disposed inside the inner periphery of the facing surface and discharges the processing liquid downward toward a center portion of the upper surface of the substrate; a first valve that switches between a discharge execution state in which the downward discharge port discharges the treatment liquid and a discharge stop state in which the downward discharge port stops discharging the treatment liquid; a second valve that switches between a discharge execution state in which the horizontal discharge port discharges the treatment liquid and a discharge stop state in which the horizontal discharge port stops discharging the treatment liquid; 4. The substrate processing apparatus according to claim 1, further comprising: a control device that switches the first valve and the second valve to start discharging the processing liquid from the downward discharge port, and then starts discharging the processing liquid from the horizontal discharge port while the downward discharge port is still discharging the processing liquid.

5. a downward discharge port that is disposed inside the inner periphery of the facing surface and discharges the processing liquid downward toward a center portion of the upper surface of the substrate; a first valve that switches between a discharge execution state in which the downward discharge port discharges the treatment liquid and a discharge stop state in which the downward discharge port stops discharging the treatment liquid; a second valve that switches between a discharge execution state in which the horizontal discharge port discharges the treatment liquid and a discharge stop state in which the horizontal discharge port stops discharging the treatment liquid; 4. The substrate processing apparatus according to claim 1, further comprising: a control device that switches the first valve and the second valve to start discharging the processing liquid from the horizontal discharge port, and then starts discharging the processing liquid from the downward discharge port while the horizontal discharge port is still discharging the processing liquid.

6. a chemical liquid pipe that guides the chemical liquid to be discharged from the horizontal discharge port toward the horizontal discharge port; a rinse liquid pipe that guides the rinse liquid to be discharged from the horizontal discharge port toward the horizontal discharge port; a liquid medicine valve that switches between a discharge execution state in which the horizontal discharge port discharges the liquid medicine and a discharge stop state in which the horizontal discharge port stops discharging the liquid medicine; a rinse liquid valve that switches between a discharge execution state in which the horizontal discharge port discharges the rinse liquid and a discharge stop state in which the horizontal discharge port stops discharging the rinse liquid; 6. The substrate processing apparatus according to claim 1, further comprising: a control device that switches the chemical liquid valve and the rinse liquid valve to discharge the chemical liquid from the horizontal discharge port, and then discharge a rinse liquid from the horizontal discharge port, thereby washing away the chemical liquid adhering to the opposing surface with the rinse liquid.

7. 7. The substrate processing apparatus according to claim 1, wherein the blocking member further includes an inner circumferential surface that extends downward from the opposing surface and surrounds the substrate.

8. 8. The substrate processing apparatus according to claim 1, wherein at least two of the plurality of protrusions have different protrusion lengths.

9. 9. The substrate processing apparatus according to claim 1, wherein a contact angle of water with at least one of the plurality of protrusions is larger than a contact angle of water with the opposing surface.

10. a step of placing an opposing surface of a blocking member opposite an upper surface of a substrate that is held horizontally; a step of forming a flow of the treatment liquid flowing outward along the opposing surface by discharging the treatment liquid in a horizontal direction or in a direction inclined relative to the horizontal direction from a lateral discharge port that is located inside an inner peripheral edge of the opposing surface and that forms a central opening of the blocking member that opens on the opposing surface; rotating the blocking member relative to the lateral discharge port around a vertical axis of rotation passing through a center portion of the substrate while discharging the processing liquid through the lateral discharge port; a step of causing the processing liquid flowing outward along the opposing surface to collide with a plurality of protrusions of the blocking member protruding downward from the opposing surface, thereby causing the processing liquid to fall onto the upper surface of the substrate.

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