charged particle beam equipment

Abstract

To provide a charged particle beam device.SOLUTION: A charged particle beam device of the present embodiment, includes: a stage in which a sample is arranged; a first charged particle beam device which includes a charged particle beam source; a detector; a first charged particle beam device which provides a charged particle beam of a charged particle generated by the charged particle beam source, and includes a first objective lens guiding a secondary electron generated from the sample to the detector; and a second charged particle beam device including a second objective lens. In the first objective lens and the sample, a retracting electric field is generated which retracts the secondary electron to the first objective lens, and in the second objective lens and the sample, an induction electric field is generated which induces a route so that the secondary electron is progressed to the detector.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates generally to charged particle beam devices. [Background technology]

[0002] Charged particle beam devices are devices that characterize samples by imaging and irradiating the surface of samples with charged particles emitted from a charged particle beam source via a charged particle optical system using a magnetic or electric field. Charged particle beam devices are widely used in fields such as materials science, nanoscience, and electronics. Microscopes based on charged particle beam devices have excellent spatial resolution, allowing for the observation of microstructures that cannot be observed with optical microscopes, such as thin films grown on substrates, nanotubes, plasmonic structures, and atomic arrangements of samples. Charged particle beam devices can also be used to observe the microstructure of biological samples such as cells and to understand the crystalline structure of samples through electron diffraction images.

[0003] Among charged particle beam devices, a scanning electron microscope (SEM) uses an electron source as a charged particle source, equivalent to the light source of an optical microscope. It focuses and scans an electron beam on a sample, detects signal electrons, and forms a microscope image. Recently, there has been a focus on research into scanning electron microscopes using low-energy electron beams, which can improve the information that can be obtained from the surface of a sample and prevent charging or damage to the sample.

[0004] Low-energy electron beams can cause chromatic aberration due to the energy spread or diffraction aberration due to the wavelength of the electron beam, which can reduce the resolution of charged particle beam devices. To improve this, objective lenses with low aberration coefficients that can reduce the focal distance to the sample and improve resolution, and scanning electron microscopes including such objective lenses, have been developed. Summary of the Invention [Problem to be solved by the invention]

[0005] The primary electron beam travels along the electron beam path to the objective lens, where it is imaged and focused on the sample. It is then decelerated by an electric field symmetrical to the direction of the sample from the objective lens, and irradiates the sample with low energy. Secondary electrons generated from the sample are accelerated toward the objective lens by the electric field and drawn into the lens, where they collide with an upper detector and are detected. To detect secondary electrons, the objective lens applies a positive high voltage to the upper electrode, and the lower electrode and the sample are grounded. Alternatively, a negative high voltage can be applied to the sample, and the upper electrode can be grounded. A combination of both structures can also be used.

[0006] An electric field is generated from the objective lens toward the sample, and appropriate potentials are set for each electrode or sample so that a force acts to attract electrons into the objective lens. The sample is positioned perpendicular to the electron beam, and the electric field is distributed symmetrically with respect to the central axis of the optical system. Therefore, the trajectories of secondary electrons generated from the sample are formed symmetrically without tilting in any one direction, and are detected with high efficiency by the upper detector without colliding with the interior of the objective lens.

[0007] However, the electron beam can be incident on the sample at an angle. In this configuration, unlike when the electron beam is incident on the sample perpendicularly, the electric field generated between the objective lens and the sample has an asymmetric distribution due to the tilt of the sample. The secondary electrons generated from the sample by the asymmetric electric field bend in one direction or the other. As a result, some of the secondary electrons collide with the edge of the objective lens and the electrodes within the objective lens and are unable to reach the upper detector.

[0008] This reduces the amount of secondary electron signal and decreases detection efficiency. In addition, secondary electrons generated from the sample collide with electrodes in the objective lens, generating new electrons. These new signal electrons become noise, worsening the signal-to-noise ratio and preventing the acquisition of good scanning electron microscope images.

[0009] One of the problems to be solved by this technology is to overcome the above-mentioned problem that the signal-to-noise ratio is deteriorated and a good scanning electron microscope image cannot be obtained. [Means for solving the problem]

[0010] The charged particle beam device of this embodiment includes a first charged particle beam device including a stage on which a sample is placed, a charged particle beam source, a first upper detector, and a first objective lens that focuses a charged particle beam of charged particles generated by the charged particle beam source onto the sample and guides secondary electrons generated from the sample to the upper detector, and a second charged particle beam device including a second objective lens, wherein a pull-in electric field is generated in the space between the first objective lens and the sample so that the secondary electrons are attracted to the first objective lens, and an induction electric field is generated in the space between the second objective lens and the sample so that the secondary electrons are guided to travel to the detector.

[0011] Another embodiment of a charged particle beam device includes a first charged particle beam device including a stage on which a sample is placed, a charged particle beam source, a first upper detector, and a first objective lens that focuses a charged particle beam of charged particles generated by the charged particle beam source onto the sample and guides secondary electrons generated from the sample to the first upper detector, and a second charged particle beam device including a second objective lens and a second upper detector, wherein a pulling electric field is generated in the space between the first objective lens and the sample so that the secondary electrons are attracted to the first objective lens, and an induced electric field is generated in the space between the second objective lens and the sample so that the secondary electrons are guided to travel to the second upper detector.

[0012] According to any aspect of the embodiment, the induced electric field is generated when the sample is tilted with respect to a first charged particle beam device.

[0013] According to any aspect of the embodiment, the charged particle beam device further includes a control and processing unit that controls the stage, the first charged particle beam device, and the second charged particle beam device, and the control and processing unit controls the magnitude of the induced electric field according to the angle at which the sample is tilted with respect to the first charged particle beam device.

[0014] According to any aspect of the embodiment, the pull-in electric field is formed by applying a potential to the sample that is lower than the potential provided to the first objective lens, and the induced electric field is formed by applying a potential to the second objective lens that is lower than the potential of the sample.

[0015] According to any aspect of the embodiment, the second objective lens includes a second upper electrode and a second lower electrode, and a potential lower than that of the sample is applied to at least one of the second upper electrode and the second lower electrode to form the induced electric field.

[0016] According to any aspect of the embodiment, the stage, the first objective lens, and the second objective lens are located in the same vacuum chamber.

[0017] According to any aspect of the embodiment, the first charged particle beam device is a scanning electron microscope, and the second charged particle beam device is one of a spectrometer and a focused ion beam device.

[0018] According to one aspect of any of the embodiments, the charged particle beam device further includes a drive power supply unit that drives the first charged particle beam device and the second charged particle beam device, a control and processing unit that controls the first charged particle beam device and the second charged particle beam device and processes detected signals, and a user terminal that receives instructions from a user.

[0019] According to any aspect of the embodiment, the induced electric field is controlled in response to the intensity of the signal detected by the detector.

[0020] According to any one of the embodiments of the charged particle beam device, data regarding the secondary electrons detected by the first upper detector and data regarding the secondary electrons detected by the second upper detector are combined to form an image of the sample. [Effects of the Invention]

[0021] According to this embodiment, there is provided an advantage that secondary electrons can be detected with high efficiency even when the sample is placed at an angle. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a diagram illustrating an outline of a charged particle beam device according to an embodiment of the present invention; [Figure 2] FIG. 2 is a diagram illustrating an outline of an operation of a charged particle beam device according to an embodiment. [Figure 3] FIG. 10 is a diagram illustrating an outline of the operation of a charged particle beam device according to another embodiment. [Figure 4] 1A and 1B are diagrams illustrating examples of images generated by the charged particle beam device according to the present embodiment. [Figure 5] 10 shows simulation results related to one of the embodiments. [Figure 6] 10 shows the results of a simulation experiment related to another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0023] The present embodiment will be described below with reference to the accompanying drawings. Fig. 1 is a diagram schematically illustrating a charged particle beam device 1 according to the present embodiment. Referring to Fig. 1, the charged particle beam device 1 of the present embodiment includes a first charged particle beam device 10 including a stage 100 on which a sample is placed, a charged particle beam source 200, a first upper detector 610, and a first objective lens 510 that provides a charged particle beam (B) of charged particles generated by the charged particle beam source 200 to the sample and guides secondary electrons generated from the sample to the first upper detector 610, and a second charged particle beam device 20 that includes a second objective lens 520.

[0024] In one embodiment, a pulling electric field is generated between the first objective lens 510 and the sample to pull secondary electrons into the first objective lens 510, and an induction electric field is generated in the space between the second objective lens 520 and the sample to guide the secondary electrons toward the first upper detector 610.

[0025] In another embodiment, the second charged particle beam device 20 may further include a second upper detector 620, and a pulling electric field is generated between the first objective lens 510 and the sample to attract secondary electrons to the first objective lens, and an induced electric field is generated between the second objective lens 520 and the sample to guide the secondary electrons toward the first upper detector 610 and the second upper detector 620. In the illustrated embodiment, the sample, the stage 100 on which the sample is placed, the first objective lens 510, and the second objective lens 520 may be located in the same vacuum chamber V.

[0026] This embodiment may include a drive power supply unit 310 that supplies voltage and / or current to drive the first charged particle beam device 10 and the second charged particle beam device 20, and a control and processing unit 320 that controls the first charged particle beam device 10, the second charged particle beam device 20, and the stage 100 and processes detection data of secondary electrons, and further includes a user terminal 330 that provides control commands for a user to control the first charged particle beam device 10 and the second charged particle beam device 20 and displays the detection results to the user.

[0027] In one embodiment, the first charged particle beam device 10 may be a scanning electron microscope (SEM). The second charged particle beam device 20 may be a spectrometer that analyzes the energy of secondary electrons generated from a sample to detect elements, chemical bond states, interband transitions, phonons, or molecular vibration states on the surface of the sample.

[0028] As another example, the second charged particle beam device 20 may be focused ion beam optics (FIB optics) capable of etching a sample or depositing a film on the sample to process the sample in a local region of interest (RoI). The focused ion beam optics can be switched between an inclined state with respect to a stage on which the sample is placed and a perpendicular state with respect to the stage. When processing the sample with a focused ion beam, the surface of the sample can be positioned so that the focused ion beam optics is perpendicular to the sample.

[0029] The sample is placed on a stage 100 located in a vacuum chamber V. In one embodiment, the stage 100 is a five-axis stage, and the control and processing unit 320 controls the stage 100 based on a control command provided by a user terminal 330 to adjust the XYZ position, rotation, and tilt of the sample 110.

[0030] As an example, the extensions of the optical axes of the optical system including the objective lens 510 of the first charged particle beam device 10 and the optical system including the objective lens 520 of the second charged particle beam device 20 intersect at a point called a coincidence point. The coincidence point is a point at which the first charged particle beam device 10 and the second charged particle beam device 20 can operate simultaneously. Therefore, the tilt of the sample and the central axis of rotation of the sample are generally designed and adjusted to correspond to the coincidence point. Furthermore, as shown in the example, when the first charged particle beam device 10 is a scanning electron microscope (SEM), the charged particle beam device can be used with the sample tilted toward the second optical system.

[0031] The first charged particle beam device 10 includes a charged particle beam source 200. In one embodiment, the charged particle beam source 200 includes a filament that is heated to emit electrons, a suppressor electrode that prevents the radiation of charged particles in any direction, an extractor electrode that extracts the charged particles in a desired direction and adjusts the emission current, and an electron source pump that creates a desired vacuum level inside the charged particle beam source.

[0032] In one embodiment, the first charged particle beam device 10 and the second charged particle beam device 20 each include one or more condenser lenses CL. The charged particle beam B is focused by the one or more condenser lenses CL and an aperture A, and is adjusted to coincide with the optical axis by a plurality of optical axis adjusters (aligners, not shown). In addition, the charged particle beam B is corrected for astigmatism by a stigmator (not shown).

[0033] The charged particle beam B travels to the first objective lens 510 and is focused onto the sample by the first objective lens 510. In one embodiment, the first objective lens 510 is an electrostatic or compound objective lens, and a high voltage is supplied to the first upper electrode 710 and the first lower electrode 712 by the driving power supply unit 310. For example, the high voltage may be +1 to +30 kV.

[0034] In one embodiment, the first objective lens 510 includes a first upper electrode 710 and a first lower electrode 712. In one embodiment, the first charged particle beam device 10 may further include, in addition to the objective lens 510, a first upper detector 610, a scanning unit 810, etc.

[0035] The second objective lens 520 of the second charged particle beam device 20 may be an electrostatic or hybrid objective lens that uses an electric field. The second objective lens 520 includes a second upper electrode 720 and a second lower electrode 722. In one embodiment, the second charged particle beam device 20 may include a second upper detector 620 or the like.

[0036] The scanning unit 810 receives a scanning signal provided by the control and processing unit 320 and controls the charged particle beam B. The scanning unit 810 controls the charged particle beam B so that it scans within the XY plane of the sample.

[0037] In one embodiment, the charged particle beam device 1 may further include a lower detector 900. For example, secondary electrons formed when the charged particle beam B is applied to the sample travel in a wide range of angular directions. The lower detector 900 may detect secondary electrons that are not attracted by the objective lenses 510 and 520, thereby improving detection performance.

[0038] 2 is a diagram illustrating a schematic example of a charged particle beam device 1. Referring to FIGS. 1 and 2, a charged particle beam B is accelerated and travels toward a sample between an electron source 200 and an objective lens 510. However, the primary charged particle beam focused on the sample by the objective lens 510 is decelerated by an electric field (pull-in electric field) between the end of the objective lens 510 and the sample, and is imaged and irradiated on the sample with energy lower than that within the objective lens 510. Secondary electrons formed when the primary charged particle beam is irradiated on the sample are attracted to the first objective lens 510 by the pull-in electric field formed between the end of the first objective lens 510 and the sample.

[0039] In one embodiment, the pulling electric field is generated in the direction of the sample between the first upper electrode 710 and / or the first lower electrode 712 of the first objective lens 510 and the sample. In one embodiment, the pulling electric field may be formed by the control and processing unit 320 controlling the driving power supply unit 310 to provide a positive potential to the first upper electrode 710 and / or the first lower electrode 712 and to provide a negative potential or ground to the sample. In another embodiment, the pulling electric field may be formed by providing a ground potential to the first upper electrode 710 and / or the first lower electrode 712 and to provide a negative potential to the sample.

[0040] When the surface of the sample is tilted relative to the first objective lens 510, the pulling electric field is formed asymmetrically at an angle relative to the charged particle beam B, as indicated by the gray arrow AE1. Therefore, secondary electrons generated from the sample either travel along the path et1 indicated by the gray arrow and collide with the first lower electrode 712, or are drawn into the first objective lens 510 and collide with the first upper electrode 710 within the first objective lens 510. This reduces the amount of signal from the secondary electrons reaching the upper detector 610, lowering the detection efficiency. Alternatively, secondary electrons that collide with the first upper electrode 710 generate electrons again, some of which flow into the first upper detector 610 and act as noise, degrading the image of the sample.

[0041] The control and processing unit 320 controls the drive power supply unit 310 to apply a potential to the second upper electrode 720 and / or second lower electrode 722 of the second objective lens 520 and to the sample, thereby generating an induced electric field ME. The induced electric field ME changes the direction in which the pull-in electric field is formed, and the pull-in electric field AE2, whose direction has been changed, has a distribution that is approximately rotationally symmetric with respect to the first lens, as in the case when the sample is vertical, and can be formed to coincide with or approximate the trajectory of the charged particle beam B. The secondary electrons attracted into the first objective lens 510 by the pull-in electric field AE2 collide less frequently with the first upper electrode 710, allowing more secondary electrons to reach the first upper detector 610 and generate a signal.

[0042] In one embodiment, the induced electric field ME may be formed by lowering the potential of the second upper electrode 720 and / or the second lower electrode 722 compared to the potential of the sample. Therefore, the driving power supply unit 310 may form a pull-in electric field by providing a voltage appropriate for the first upper electrode 710 and / or the first lower electrode 712 and the sample, and may form the induced electric field ME by providing a potential lower than the potential formed in the sample to the second upper electrode 720 and / or the second lower electrode 722.

[0043] 3 is a diagram illustrating a charged particle beam device according to another embodiment. Referring to FIGS. 1 and 3, the control and processing unit 320 controls the drive power supply unit 310 to apply a potential to the second upper electrode 720 and / or the second lower electrode 722 of the second objective lens 520 and the sample, thereby generating an induced electric field ME. In the embodiment illustrated in FIG. 3, the induced electric field ME may be an electric field formed in the second upper electrode 720 and / or the second lower electrode 722 of the second objective lens 520 in the direction of the sample.

[0044] 3 may be formed by increasing the potential of the second upper electrode 720 and / or the second lower electrode 722 relative to the potential of the sample. Therefore, the driving power supply 310 may form a pull-in electric field by providing a voltage appropriate for the first upper electrode 710 and / or the first lower electrode 712 and the sample, and may form the induced electric field ME by providing a potential higher than the potential formed in the sample to the second upper electrode 720 and / or the second lower electrode 722.

[0045] When the induced electric field ME according to this embodiment is generated, collisions between secondary electrons generated from the sample and the first upper electrode 710 of the first objective lens 510 are reduced, allowing more of the secondary electrons to reach the first upper detector 610 compared to when no induced electric field is provided. Furthermore, the induced electric field ME functions similarly to a pulling electric field formed between the first objective lens 510 and the sample, and pulls the secondary electrons generated from the sample into the second objective lens 520. Therefore, the secondary electrons can be detected by the second upper detector 620 included in the second charged particle beam device 20 to form an image of the sample.

[0046] 1 again, the control and processing unit 320 detects the intensity of the output signal of the first upper detector 610. For example, the control and processing unit 320 may include a level meter to detect the output intensity of the first upper detector 610, and may adjust the potential provided to the second upper electrode 720 and / or the second lower electrode 722 according to the output of the first upper detector 610 to control the induced electric field.

[0047] In addition, the control and processing unit 320 can output a control signal to control the 5-axis stage so that the signal of the first upper detector 610 is maximized for each tilt angle of the stage 100, and as another example, can control the strength of the induced electric field ME according to the tilt angle of the stage 100.

[0048] The control and processing unit 320 may include a frame grabber that forms an image by processing data provided by the first upper detector 610 and the second upper detector 620. The frame grabber receives data formed by detecting secondary electrons by the first upper detector 610, the second upper detector 620, and / or the lower detector 900, and synchronizes it with a scan signal provided to the scan unit 810 to form an image at each detector, as shown in FIG.

[0049] As another example, the control and processing unit 320 can receive data generated by detecting secondary electrons from the first upper detector 610 and the second upper detector 620, sum the data, and, together with the scanning signal, form an image as illustrated in FIG. 4(b). The lower image in FIG. 4(b) may be an image formed from data generated by detecting secondary electrons from the lower detector 900. The signal from the lower detector 900 can also be synchronized with the scanning signal driver circuit to form an image. Thus, scanning electron microscope images having different information from the sample can be simultaneously acquired through detectors disposed at different positions.

[0050] Simulation experiment results In the simulation results described below, the red lines indicate equipotential surfaces, and the blue lines indicate the trajectories of secondary electrons generated from the sample. Figures 5(a), 5(b), and 5(c) show the simulation results related to the embodiment illustrated in Figure 2. In Figure 5, the trajectories of secondary electrons were calculated when a voltage was applied to the second upper electrode 720 of the second objective lens 520, and the detection efficiency was calculated from the ratio of secondary electrons that reached the first upper detector 610.

[0051] The results of the simulation experiment will be explained with reference to Figures 1 to 5. Figure 5(a) shows the case where the sample is not tilted and the charged particle beam B is incident perpendicularly on the surface of the sample. As described above, a symmetric electric field (pull-in electric field) is formed between the first objective lens 510 and the sample, and secondary electrons are attracted to the first objective lens 510 and detected with an excellent efficiency of 83.3%.

[0052] 5(b) shows a case where the tilt angle of the stage 100 is set to 60 degrees in order to position the sample at an angle relative to the first objective lens 510. In the configuration shown in FIG. 5(b), the voltage applied to the second objective lens 520 is set to be the same as the voltage applied to the sample, so that no induced electric field is generated.

[0053] When the sample is tilted as shown in Figure 5(b), the trajectories of the secondary electrons are significantly deflected with respect to the optical axis, and most of them collide with the lower electrode or the internal electrode of the objective lens, resulting in a drop in detection efficiency to 17%.

[0054] The simulated experimental environment illustrated in Figure 5(c) was set up similarly to the configuration of Figure 5(b). The tilt angle of the stage 100 on which the sample was placed was set to 60 degrees. However, a voltage of -3000 V, lower than the voltage applied to the sample, was applied to the second upper electrode 720. From this, it can be seen that equipotential lines appeared from the end of the second objective lens 520 toward the sample, and an induced electric field was generated from the sample toward the end of the second objective lens 520.

[0055] As mentioned above, it was confirmed that the induced electric field reduced the deflection of the secondary electron trajectories near the first objective lens 510, and most of the secondary electrons collided with the first upper detector 610. As a result, the detection efficiency improved to 82.6%, which is a level similar to the condition in which the sample was vertical as shown in FIG. 5(a).

[0056] 5, a voltage lower than that of the sample was applied to the second upper electrode 720, but a similar effect can be obtained even when a voltage lower than that of the sample is applied to the second lower electrode 722. In such a case, a similar effect can be expected even when a voltage with a smaller absolute value than that applied to the second upper electrode 720 is applied.

[0057] Although the illustrated simulation experiment shows the case of an electrostatic lens, the same results can be obtained for a compound lens type objective lens of magnetic and electric fields.

[0058] Furthermore, in the simulation experiment of Figure 5, the tilt angle of the sample was set to 60 degrees, but for other tilt angles, an induced electric field can be formed and the detection efficiency can be improved by applying a voltage to the second lower electrode 722 and / or the second upper electrode 720 that is lower than the voltage applied to the sample and adjusting it according to the tilt angle.

[0059] Figures 6(a) and 6(b) show the results of a simulation experiment related to the embodiment shown in Figure 3. In Figure 6, the trajectories of secondary electrons were calculated when a voltage was applied to the second upper electrode 720 of the second objective lens 520, and the detection efficiency was calculated from the ratio of electrons reaching the first upper detector 610 and the ratio of electrons reaching the second upper detector 620. The simulation experiment was performed by setting both the first objective lens 510 and the second objective lens 520 to electrostatic lenses.

[0060] 1 to 6(a), the voltage applied to the second objective lens 520 is the same as the voltage applied to the sample. Because the sample is tilted, the trajectories of the secondary electrons are deflected, and most of the electrons collide with the tip of the objective lens or inside the lens, reducing the detection efficiency to 17%.

[0061] In FIG. 6(b), an induced electric field was formed by applying a voltage of +7000 V, which is higher than the voltage of the sample, to the second upper electrode 720. In the experimental environment of FIG. 6(b), as described above, the secondary electrons are attracted to either the first objective lens 510 or the second objective lens 520, whichever is closer, depending on the emission angle. In this case, the detection efficiency of the first upper detector 610 is 7.8%, and the detection efficiency of the second upper detector 620 is 29.8%. The total detection efficiency of the first upper detector 610 and the second upper detector 620 is 37.6%. In FIG. 6(b), when a voltage higher than the voltage of the sample is applied to the second upper electrode 720 and detection is performed by the second upper detector 620 and both the first upper detector 610 and the second upper detector 620, the efficiency is improved compared to the case of FIG. 6(a).

[0062] In the simulation experiment shown in FIG. 6, a voltage higher than that of the sample was applied to the second upper electrode 720. However, a similar effect can be obtained by applying a voltage higher than that of the sample to the second lower electrode 722. When applying a voltage to the second lower electrode 722, a similar effect can be obtained with a voltage having a smaller absolute value than when applying a voltage to the second upper electrode 720. The calculation results shown in FIG. 6 are for an electrostatic lens, but similar results can be obtained for a magnetic and electrostatic hybrid objective lens. The simulation experiment shown in FIG. 6 shows the calculation results for a sample tilt angle of 60 degrees. However, detection efficiency can also be improved for other tilt angles by applying a voltage higher than that of the sample to the second upper electrode 720, adjusted according to the tilt angle.

[0063] In order to facilitate understanding of the present invention, the present invention has been described with reference to the embodiments shown in the drawings, but these are merely illustrative and are for illustrative purposes only, and those skilled in the art will appreciate that various modifications and equivalent embodiments are possible. Therefore, the true technical scope of protection of the present invention should be determined by the appended claims. [Explanation of symbols]

[0064] 1. Charged particle beam equipment 10. First Charged Particle Beam Device 20. Second Charged Particle Beam Device 100 stages 200 Charged particle beam source 310 Drive power supply unit 320 Control and Processing Unit 330 User Terminal 510 First objective lens 520 Second Objective Lens 610 First Upper Detector 620 Second Upper Detector 710 1st upper electrode 712 1st lower electrode 720 2nd upper electrode 722 Second lower electrode 810 Scanning Unit 900 Lower Detector

Claims

1. a stage on which the sample is placed; a first charged particle beam device including a charged particle beam source, a detector, and a first objective lens that provides a charged particle beam of charged particles generated by the charged particle beam source to the sample and guides secondary electrons generated from the sample to the detector; a second charged particle beam device including a second objective lens; a pulling electric field is generated between the first objective lens and the sample so that the secondary electrons are pulled into the first objective lens; an induced electric field is generated between the second objective lens and the sample, which induces the secondary electrons to travel to the detector; The charged particle beam device includes: a control and processing unit that controls the stage, the first charged particle beam device, and the second charged particle beam device; The control and processing unit A charged particle beam device that controls the magnitude of the induced electric field in accordance with an angle at which the sample is tilted with respect to a first charged particle beam device.

2. The pulling electric field is a potential lower than that applied to the first objective lens is applied to the sample; The induced electric field is The charged particle beam device according to claim 1 , wherein a potential lower than that of the sample is applied to the second objective lens.

3. The second objective lens is a second upper electrode and a second lower electrode; The charged particle beam device according to claim 2 , wherein a potential lower than that of the sample is applied to at least one of the second upper electrode and the second lower electrode to form the induced electric field.

4. The charged particle beam device according to claim 1 , wherein the stage, the first objective lens, and the second objective lens are located in the same vacuum chamber.

5. the first charged particle beam device is a scanning electron microscope, The charged particle beam device according to claim 1 , wherein the second charged particle beam device is one of a spectrometer and a focused ion beam device.

6. The charged particle beam device includes: a drive power supply unit that drives the first charged particle beam device and the second charged particle beam device; a control and processing unit that controls the first charged particle beam device and the second charged particle beam device and processes detected signals; The charged particle beam device according to claim 1 , further comprising: a user terminal that receives instructions from a user.

7. The charged particle beam device according to claim 1 , wherein the induced electric field is controlled in accordance with the intensity of the signal detected by the detector.

8. a stage on which the sample is placed; a first charged particle beam device including a charged particle beam source, a first upper detector, and a first objective lens that provides the charged particle beam generated by the charged particle beam source to the sample and guides secondary electrons generated from the sample to the first upper detector; a second charged particle beam device including a second objective lens and a second upper detector; a pulling electric field is generated between the first objective lens and the sample so that the secondary electrons are pulled into the first objective lens; A charged particle beam device, wherein an induced electric field is generated between the second objective lens and the sample, which induces the secondary electrons to travel toward the second upper detector.

9. The charged particle beam device according to claim 8 , wherein the induced electric field is generated when the sample is tilted with respect to the first charged particle beam device.

10. The charged particle beam device includes: a control and processing unit that controls the stage, the first charged particle beam device, and the second charged particle beam device; The control and processing unit The charged particle beam device according to claim 8 , wherein the magnitude of the induced electric field is controlled in accordance with an angle at which the sample is tilted with respect to the first charged particle beam device.

11. The pulling electric field is a potential lower than that applied to the first objective lens is applied to the sample; The induced electric field is The charged particle beam device according to claim 8 , wherein a potential higher than that of the sample is applied to the second objective lens.

12. The second objective lens is a second upper electrode and a second lower electrode; The charged particle beam device according to claim 8 , wherein a potential higher than that of the sample is applied to at least one of the second upper electrode and the second lower electrode to form the induced electric field.

13. The charged particle beam device according to claim 8 , wherein the stage, the first objective lens, and the second objective lens are located in the same vacuum chamber.

14. the first charged particle beam device is a scanning electron microscope, The charged particle beam device according to claim 8 , wherein the second charged particle beam device is one of a spectrometer and a focused ion beam device.

15. The charged particle beam device includes: a drive power supply unit that drives the first charged particle beam device and the second charged particle beam device; a control and processing unit that controls the first charged particle beam device and the second charged particle beam device and processes detected signals; The charged particle beam device according to claim 8 , further comprising: a user terminal that receives instructions from a user.

16. The charged particle beam device according to claim 8 , wherein the induced electric field is controlled in accordance with the intensity of a signal detected by at least one of the first upper detector and the second upper detector.

17. The charged particle beam device includes: data relating to the secondary electrons detected by the first upper detector; 9. The charged particle beam device according to claim 8, wherein the data relating to the secondary electrons detected by the second upper detector is added together to form an image of the sample.

Images