Systems and methods for deposit residue control

Abstract

An exemplary semiconductor processing system can include a chamber body including a sidewall and a base. The system can include a substrate support extending through the base of the chamber body. The substrate support can include a support platen and a stem. The system can include a baffle extending around the stem of the substrate support. The baffle can define one or more apertures therethrough. The system can include a fluid source fluidly coupled to the chamber body at an access between the stem of the substrate support and the baffle.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 17 / 104,387, entitled "SYSTEMS AND METHODS FOR DEPOSITION RESIDUE CONTROL," filed on November 25, 2020, the entire contents of which are incorporated herein by reference.

[0002] Technical Field

[0002] The present technology relates to systems and methods for semiconductor processing, and more particularly, to processing chamber components and methods for controlling deposition residues during processing. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on substrate surfaces. Fabricating patterned materials on substrates requires controlled methods for forming and removing materials. Precursors are often supplied to a processing region and distributed to uniformly deposit or etch material on the substrate. Many aspects of a processing chamber can affect the uniformity of the process, such as the uniformity of process conditions within the chamber, the uniformity of flow through components, and other process and component parameters. Even small discrepancies across the substrate can affect the formation or removal process. Additionally, components within the chamber can affect deposition on the edge and backside regions of chamber components or substrate support.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to fabricate high quality devices and structures. These and other needs are addressed by current technology. Summary of the Invention

[0005] An exemplary semiconductor processing system can include a chamber body including a sidewall and a base. The system can include a substrate support extending through the base of the chamber body. The substrate support can include a support platen and a stem. The system can include a baffle extending around the stem of the substrate support. The baffle can define one or more apertures therethrough. The system can include a fluid source fluidly coupled to the chamber body at an access between the stem of the substrate support and the baffle.

[0006] In some embodiments, the system can include a pumping plate extending around the substrate support, forming a plenum between the pumping plate and a base of the chamber body. The system can include an RF rod extending through a stem of the substrate support. The RF rod can be coupled to an electrical ground or an RF power source. The baffle can include a conductive cover extending along the stem of the substrate support. The base of the chamber body can define access to a pumping system foreline. The base of the chamber body can include a fluorine-containing coating.

[0007] Some embodiments of the present technique may include a method of semiconductor processing. The method may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The method may include flowing a purge gas through a gap defined between a substrate support and a baffle extending around a stem of the substrate support. The method may include generating a plasma effluent of the purge gas between the stem of the substrate support and the baffle. The method may include depositing a material on a substrate resting on the substrate support. The method may include evacuating deposition by-products from the processing region. The method may include flowing the plasma effluent of the purge gas through apertures defined in the baffle while evacuating the deposition by-products from the processing region of the semiconductor processing chamber.

[0008] In some embodiments, the baffle may be or may include a conductive cover extending along the stem of the substrate support. The substrate support may include an RF rod extending through the stem of the substrate support. The plasma of the deposition precursor may be a capacitively coupled plasma formed in a processing region of the semiconductor processing chamber. Plasma effluents of the purge gas may be generated by emission from the RF rod. The method may include removing deposited material from a surface of the semiconductor processing chamber using the plasma effluents of the purge gas. The semiconductor processing chamber may include a chamber body including a sidewall and a base. The base of the chamber body may define access to a pumping system foreline. The chamber may include a pumping plate extending around the substrate support and forming a plenum between the pumping plate and the base of the chamber body. The base of the chamber body may include a fluorine-containing coating. The plasma effluents of the purge gas may flow into the plenum formed between the pumping plate and the chamber body. The purge gas may be or may include oxygen or nitrogen trifluoride.

[0009] Some embodiments of the present technique may include a method of semiconductor processing. The method may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The method may include flowing a purge gas through a gap defined between a substrate support and a baffle extending around a stem of the substrate support. The method may include depositing a material on a substrate resting on the substrate support. The method may include evacuating deposition by-products from the processing region. The method may include flowing the purge gas through apertures defined in the baffle while evacuating the deposition by-products from the processing region of the semiconductor processing chamber.

[0010] In some embodiments, the purge gas may react with deposition byproducts to generate volatiles. The semiconductor processing chamber may include a chamber body including a sidewall and a base. The base of the chamber body may define access to a pumping system foreline. The chamber may include a pumping plate extending around the substrate support and forming a plenum between the pumping plate and the base of the chamber body. The aperture defined through the baffle may be formed at a location between the pumping plate and a platen of the substrate support.

[0011] Such techniques may offer many advantages over conventional systems and techniques. For example, embodiments of the present techniques may limit deposition on chamber components, such as near the foreline connection and on other chamber components. Furthermore, by reducing or eliminating deposition within the chamber, chamber cleaning operations may be reduced, improving throughput. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0013] [Figure 1] 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2]

[0014] 1 shows a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the present technique; [Figure 3]

[0015] 1 shows a schematic partial cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique; [Figure 4]

[0016] 1 illustrates operations of an exemplary method of semiconductor processing in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0017] Some of the figures are included as circuit diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale unless specifically indicated to scale. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0015]

[0018] In the accompanying figures, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference number is used herein, the description is applicable to any one of the similar components having the same first reference number, regardless of the letter.

[0016]

[0019] Plasma-enhanced deposition processes can energize one or more constituent precursors to promote film formation on a substrate. Any number of material films can be produced to develop semiconductor structures, including conductive and dielectric films, as well as films that facilitate material transport and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting and preserving underlying materials. Additionally, other dielectric materials can be deposited to isolate transistors on a substrate or form semiconductor structures. In many processing chambers, several precursors can be mixed in a gas panel and delivered to the processing region of the chamber where the substrate may be placed. While lid stack components can affect flow distribution to the processing chamber, many other processing variables can similarly affect deposition uniformity.

[0017]

[0020] While lid stack components can advantageously distribute precursors to the processing region to promote uniform deposition, the structure and operation to ensure more uniform coverage across the substrate can extend deposition to multiple regions around the chamber. For example, deposition precursors and products can flow through an exhaust system connected to the bottom of the processing chamber or elsewhere around the chamber. However, because many of these components may be maintained at a lower or significantly lower temperature than the substrate being processed, deposition materials can easily condense or redeposit on the walls or base of the chamber body, which may form connections with the pumping system. To address this issue, conventional techniques may be forced to increase the timing of subsequent chamber cleaning processes after deposition. However, such processes can have several drawbacks. For example, accessing these areas of the chamber can be more difficult, which can increase the required cleaning time and increase wait times, potentially reducing system throughput. Furthermore, these increased cleaning times can expose other chamber components to prolonged interaction with plasma effluents, potentially resulting in faster corrosion of the chamber or components.

[0018]

[0021] The present technique overcomes these challenges by utilizing a purge material to interact with one or more deposition byproducts and deposition materials in the chamber during deposition operations. The present technique can limit or prevent deposition on chamber components or remove deposition materials from chamber surfaces during deposition operations by chemically reacting with the released deposition materials and / or utilizing a parasitic plasma to generate cleaning radical species. Controlling or removing materials that deposit on chamber surfaces can improve cleaning operations by limiting cleaning performed in recessed regions, thereby increasing throughput.

[0019]

[0022] While the remaining disclosure routinely identifies specific deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur in the described chambers. For example, many etching processes may generate by-products that may condense or reform on chamber surfaces, which can be improved by incorporating one or more aspects of the present technology. Thus, the present technology should not be considered limited to use with only these specific deposition processes or chambers. This disclosure discusses one possible system and chamber that may include lid stack components according to embodiments of the present technology, before describing additional modifications and adjustments to this system according to embodiments of the present technology.

[0020]

[0023] FIG. 1 illustrates a top view of one embodiment of a processing system 100 comprising deposition, etching, baking, and curing chambers according to an embodiment. In the figure, a pair of front-opening integrated pods 102 deliver substrates of various sizes that are positioned within a low-pressure holding area 106 before being received by a robotic arm 104 and placed in one of the substrate processing chambers 108a-f positioned in tandem sections 109a-c. A second robotic arm 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and vice versa. Each substrate processing chamber 108a-f can be equipped to perform many substrate processing operations, including the formation of stacks of semiconductor materials as described herein, in addition to plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and other substrate processes including annealing, ashing, and the like.

[0021]

[0024] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes can be performed in chambers separate from the fabrication system shown in different embodiments. It will be understood that additional configurations of dielectric film deposition, etching, annealing, and curing chambers are contemplated by system 100.

[0022]

[0025] 2 shows a schematic partial cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may represent a pair of processing chambers 108 that may fit into one or more of the tandem sections 109 described above and may include faceplates or other parts or assemblies in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that defines a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and include identical components.

[0023]

[0026] For example, processing region 220B, whose components may be included in processing region 220A, may include a pedestal 228 disposed in the processing region through a passageway 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, such as a resistive heating element, capable of heating and controlling the substrate temperature to a desired processing temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0024]

[0027] The body of the pedestal 228 may be coupled to the stem 226 by a flange 233. The stem 226 may electrically connect the pedestal 228 to a power outlet or power box 203. The power box 203 may include a drive system to control the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface for supplying power to the pedestal 228. The power box 203 may also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 may include a base assembly 238 adapted to removably couple to the power box 203. A circumferential ring 235 is shown on the power box 203. In some embodiments, the circumferential ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the upper surface of the power box 203.

[0025]

[0028] The rod 230 may be contained through a passage 224 formed in the bottom wall 216 of the processing region 220B and may also be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively space the substrate 229 from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to transfer the substrate 229 through the substrate transfer port 260 into the processing region 220B.

[0026]

[0029] A chamber lid 204 can be coupled to the top of the chamber body 202. The lid 204 can house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 can include a precursor inlet passage 240 that can supply reactants and cleaning precursors to the processing region 220B through a gas supply assembly 218. The gas supply assembly 218 can include a gas box 248 having a blocker plate 244 disposed intermediate a faceplate 246. A radio frequency ("RF") source 265 can be coupled to the gas supply assembly 218, and the radio frequency ("RF") source 265 can provide power to the gas supply assembly 218 to facilitate generation of a plasma region between the faceplate 246 of the gas supply assembly 218 and the pedestal 228, which can be the processing region of the chamber. In some embodiments, the RF source can be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate generation of the plasma. A dielectric isolator 258 can be disposed between the lid 204 and the gas supply assembly 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 can be disposed around the pedestal 228 to engage the pedestal 228.

[0027]

[0030] Optional cooling channels 247 can be formed in the gas box 248 of the gas distribution system 208 to cool the gas box 248 during operation. A heat transfer fluid, such as water, ethylene glycol, or gas, can be circulated through the cooling channels 247 so that the gas box 248 can be maintained at a predetermined temperature. A liner assembly 227 can be positioned within the processing region 220B proximate the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment within the processing region 220B. The liner assembly 227 can include a circumferential pumping cavity 225 that can be coupled to a pumping system 264 configured to evacuate gases and byproducts from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 can be formed on the liner assembly 227. The exhaust ports 231 can be configured to allow gas flow from the processing region 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0028]

[0031] FIG. 3 illustrates a schematic, partial cross-sectional view of an exemplary processing system 300, in accordance with some embodiments of the present technique. FIG. 3 may provide additional details regarding components within system 200. System 300 may be understood to include any feature or aspect of system 200 described above in some embodiments. System 300 may be used to perform semiconductor processing operations, including deposition of the aforementioned hard mask or other materials, as well as other deposition, removal, or cleaning operations. System 300 illustrates a partial view of chamber components that may be incorporated into the discussed semiconductor processing system, and may also be shown without some of the lid stack components described above. As will be readily understood by those skilled in the art, any aspect of system 300 may also be incorporated into other processing chambers or systems.

[0029]

[0032] The system 300 can include a processing chamber including a faceplate 305 through which precursors can be delivered for processing and can be coupled to a power source 307 for generating a plasma within a processing region of the chamber. The chamber can also include a chamber body 310, which may include sidewalls and a base as shown. A pedestal or substrate support 315 can extend through the base of the chamber as previously described. The substrate support can include a support platen 320 that can support a semiconductor substrate 322. The support platen 320 can be coupled to a stem 325 that extends through the base of the chamber. The stem 325 can provide access to a number of fluid and electrical connections, such as connections for a heater or chuck. As described above, a conductive rod, such as an RF rod 328, can extend through the stem of the substrate support and can be coupled to an electrode or to the substrate support. The rod can be coupled to an electrical ground 329 as shown, although in some embodiments, the power source 307 and electrical ground connections can be reversed and power can be applied through the substrate support. In either scenario, the two electrodes can be operated to generate a capacitively coupled plasma within a processing region defined between the faceplate and the substrate support.

[0030]

[0033] As shown, the chamber body 310 can define an access 330 that extends around the substrate support and can be defined by the chamber body and / or by one or more additional components within the chamber. A fluid source 335 can be coupled to the access 330 or a port connected to the access and can be configured to supply one or more purge materials through the access into a region at least partially defined around the stem of the substrate support, for example, using a baffle 350, as described further below. While any inert or noble gas can be flowed through the access, as described further below, in some embodiments, the fluid source can supply an etchant or diluent species, such as hydrogen, oxygen, a halogen-containing material, or other material, through the access to facilitate dilution of or reaction with the deposited material, as described further below.

[0031]

[0034] The system 300 can also include additional components that cooperate to define an exhaust path from the processing chamber. The chamber can include a pumping plate 340 that, together with the base of the chamber, defines an exhaust plenum. The pumping plate 340 extends around the substrate support stem, defining an access between the pumping plate and the stem, allowing process gases to enter the plenum and be exhausted from the chamber. A pumping system 345 can be coupled through the base of the chamber to evacuate process materials, and the system can include pumps, throttle valves, a foreline that can be coupled to the base of the chamber, and other components that can be used in a semiconductor chamber exhaust setup.

[0032]

[0035] The chamber can also include a baffle 350 extending around the stem of the substrate support. The baffle can include a region defined between the stem of the substrate support and the baffle that can receive purge fluid flowing from a fluid source 335. In some embodiments, the baffle 350 can define one or more apertures 355 therethrough, which can provide an outlet for fluid that has entered the region. The apertures can be included in any location or configuration to direct the purge material to interact with process fluid flowing toward the exhaust or to interact with materials deposited on the chamber surfaces. For example, as noted above, some chamber surfaces may be maintained at a lower temperature than the substrate, which can make deposition products and by-products more likely to condense or deposit on these surfaces. To accommodate this material or prevent its deposition, the present technique can perform a number of operations.

[0033]

[0036] For example, one or more apertures 355 can be formed through a baffle between the base of the chamber and the pumping plate 340 to direct purge material into the exhaust plenum. Additionally or alternatively, one or more apertures 355 can be formed through a baffle between the pumping plate and the backside of the substrate support platen to allow the purge material to contact chamber surfaces such as the platen, chamber walls, liner, slit valve, or to interact with flowing emissions. In some embodiments, the apertures can be angled or directed toward the surface. As one non-limiting example, one or more apertures formed through a baffle between the chamber body and the pumping plate 340 can be angled downward to direct purge material toward the bottom of the chamber, thereby increasing interaction with and removal of deposited material. Additionally, the apertures can be angled to interact with particular chamber surfaces, platens, or other sides of the support, or to create a certain amount of flow or rotation around a defined area below the support platen.

[0034]

[0037] As described further below, in some embodiments, the purge material can be flowed in an unenergized state to interact with deposition materials, such as materials that did not react or deposit on the substrate surface or by-products generated during deposition. Additionally, systems according to some embodiments of the present technology can utilize parasitic plasma to generate cleaning plasma radical species to perform chamber cleaning operations during deposition. As described above, the RF rod 328 or some other conductive rod can provide RF power for plasma generation or, as shown, extend through the substrate support stem as a return path to electrical ground. This operation generates a capacitively coupled plasma between the faceplate and the pedestal, which allows plasma-enhanced deposition to occur. However, the voltage passing through the rod 328 can generate an outward-extending electric field. Semiconductor processing generally attempts to limit the generation of parasitic plasma, which can alter plasma generation, current flow, and processing operations at intended locations. For example, the baffle 350 can be formed of a conductive material that includes a Faraday cage-like field to limit the formation of parasitic plasma in the processing environment.

[0035]

[0038] The present technique can supply a purge fluid between the stem and the baffle, which can be energized and, in some embodiments, ionized in this region. The baffle can be maintained a sufficient distance from the stem to allow for the generation of radical purge species. By incorporating apertures in the baffle, radical species can be supplied into the processing chamber and interact in one or more ways. For example, plasma species can be supplied to interact with flowing deposition products, or in some embodiments, the purge material can include one or more etchant materials that can perform chamber cleaning during processing. Furthermore, in some embodiments, the chamber base and one or both sides of the pumping plate can be coated with fluorine-containing, ceramic, or other materials to limit deposition during processing. For example, chamber surfaces or components can include a coating of polytetrafluoroethylene or some other material configured to limit the deposition of by-products during processing operations.

[0036]

[0039] As previously described, some embodiments of the present technique may utilize purge and / or cleaning materials that can limit deposition on chamber components outside of the processing region defined between the substrate support and faceplate, or may remove deposition materials during the deposition operation itself. FIG. 4 illustrates operations of an exemplary semiconductor processing method 400 in accordance with some embodiments of the present technique. The method may be performed in a variety of processing chambers, including the processing systems 200 and 300 described above, which may include any features or components that define purge and exhaust paths as described above. Method 400 may include numerous optional operations that may or may not be specifically associated with some embodiments of methods in accordance with the present technique. For example, many of the operations are described to provide a broader scope of the technique, but are not critical to the technique or may be performed in alternative ways as readily understood. Furthermore, operations may be performed in any order, including orders different from those illustrated, including performing one or more operations simultaneously. It should be understood that the operations shown are merely operations that may occur during methods in accordance with some embodiments of the present technique.

[0037]

[0040] Method 400 may include additional operations prior to the initiation of the recited operations. For example, semiconductor processing may be performed before initiating method 400. The processing operations may be performed within the chamber or system in which method 400 is performed, or processing may be performed in one or more other processing chambers prior to providing a substrate within a processing chamber in which method 400 may be performed. Once a substrate is received within a processing chamber, such as including some or all of the components of system 300 described above, method 400 may include, in operation 405, forming a plasma of one or more deposition precursors within a processing region of the semiconductor processing chamber. The substrate may be positioned on a substrate support, such as support 315 described above, which may include any of the components, features, or characteristics described above, including a baffle defining one or more openings for directing a purge fluid, as previously described. During formation and deposition operations, including during deposition operations, in operation 410, a purge gas may be flowed into an access through the bottom of the chamber, for example, into a gap or region defined between the substrate support and a baffle extending around the stem of the substrate support.

[0038]

[0041] During deposition, a purge material can flow or be directed through one or more apertures defined through the baffle. In some embodiments, a purge or cleaning fluid can be provided to interact with the sides of the deposited material. As one non-limiting example, during the formation of a carbon hard mask material, the emitted material can include carbon- and hydrogen-containing materials, which may be radicals. By flowing hydrogen and / or oxygen to interact with these materials, a reaction can occur based on the energy provided by the radical carbon species. This reaction can produce volatile products, such as hydrocarbons, carbon dioxide, or other substances, which can prevent carbon deposition on the chamber surfaces.

[0039]

[0042] As another non-limiting example, during deposition of silicon materials, such as using plasma emissions of silane or tetraethyl orthosilicate, the purge material can include hydrogen- or halogen-containing materials, such as fluorine- or chlorine-containing materials, which can produce volatile silicon materials such as reformed silane, silicon tetrafluoride, or other materials that can limit silicon deposition on chamber components. Thus, it can be combined with the deposition material or used as an etchant to clean the chamber or etch the deposition material. In some embodiments of these processes, one or more apertures can be defined in the baffle to direct the material before it interacts with the chamber surfaces, such as entering the exhaust plenum, and the purge fluid can be supplied to the region between the pumping plate and the substrate support platen, although alternatively or additionally, the material can be supplied at other locations to limit deposition on chamber surfaces.

[0040]

[0043] Additionally, as previously described, optional operation 415 can generate plasma emissions of purge material using a voltage across an RF rod or another conductive rod. As previously described, the deposition precursor plasma can be a capacitively coupled plasma generated between the faceplate and the substrate support. A voltage applied through a rod in the stem or extended to ground can be used to generate a parasitic plasma, which can generate plasma emissions of purge material. The purge material can then be directed to one or more locations where deposition may occur, such as within a pumping plenum, including along the base of the chamber body. The radical purge material can etch or remove materials and expel them from the system. For example, oxygen plasma emissions can be directed to a location to remove carbon-containing deposits formed on chamber surfaces during a carbon material deposition operation, or fluorine plasma emissions can be directed to a location to remove silicon-containing deposits.

[0041]

[0044] In operation 420, material may be deposited on a substrate from the plasma effluent of one or more deposition precursors. Both residual deposition material and by-products, as well as a purge gas, may be flowed into an exhaust plenum. These materials may then be evacuated from the processing chamber in operation 425. During deposition, in operation 430, a purge material may be directed to one or more locations with apertures through the baffle. In some embodiments, the purge material may interact with the flowing deposition products and limit or prevent deposition on chamber surfaces, while in some embodiments, the purge material may remove deposition material in optional operation 435, as described above.

[0042]

[0045] As noted above, any number of purge gases can be flowed through the access and gaps in the chamber. For example, any noble gas, including helium or argon, as well as hydrogen, nitrogen, oxygen, or materials containing one or more of these, such as nitrous oxide, halogen-containing materials, or any other material, can be flowed as purge gases. Because some purge gases can be characterized by higher ionization energies, which can limit discharge, the deposition plasma may or may not be run at higher voltages to increase the formation of parasitic plasma.

[0043]

[0046] The flow of the purge gas can affect aspects of the deposition. For example, in one non-limiting example, processes and apparatus according to embodiments of the present technology can be used to deposit a carbon hard mask on a substrate. In some embodiments, the deposition precursors can be limited to carbon- and hydrogen-containing precursors and / or one or more carrier gases, but in some embodiments can include one or more dopant precursors. To facilitate removal or interaction with the precursors and ensure complete removal of carbon materials deposited on the chamber surfaces, the flow rate of oxygen, hydrogen, or other substances can be about 500 sccm or more of the flow rate introduced through the access in the chamber, and the flow rate can be about 1000 sccm or more, about 1500 sccm or more, about 2000 sccm or more, about 2500 sccm or more, about 3000 sccm or more, about 3500 sccm or more, about 4000 sccm or more, about 4500 sccm or more, about 5000 sccm or more, or more. Additionally, when nitrogen and oxygen containing materials such as nitrous oxide are used, the flow rate can be doubled to provide sufficient oxygen for removal. Similar flow rates for the other materials mentioned above can be utilized for interaction with other deposition materials, such as fluorine-containing materials, which may be provided in some embodiments of silicon-containing deposition.

[0044]

[0047] To further enhance removal of potentially deposited materials, the base of the chamber can be increased compared to conventional processes. For example, the base of the chamber can be heated to about 100°C or higher, and can be heated to about 110°C or higher, about 120°C or higher, about 130°C or higher, about 140°C or higher, about 150°C or higher, about 160°C or higher, about 170°C or higher, about 180°C or higher, about 190°C or higher, about 200°C or higher, or even higher. Other components of the pumping system can be similarly heated to limit deposition, and as previously mentioned, any of the components can be coated to limit deposition. By incorporating embodiments of the present technology, in some embodiments, deposition on chamber surfaces can be limited or prevented. As a result, cleaning times can be reduced, thereby increasing throughput.

[0045]

[0048] Although the foregoing description, for purposes of explanation, sets forth numerous details in order to provide an understanding of various embodiments of the present technology, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0046]

[0049] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology, many well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the technology.

[0047]

[0050] Where a range of values is provided, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed, to the smallest fraction of the unit of the lower limit. Any smaller ranges between a stated value or an unstated intervening value in a stated range and any other stated or intervening value in the stated range are encompassed. The upper and lower limits of these smaller ranges may be independently included or excluded, and each range in which either, neither, or both limits are included in the smaller range is also encompassed within the technology, subject to the specifically excluded limit in the stated range. When one or both of the limits are included in a stated range, ranges excluding either or both of the included limits are also included.

[0048]

[0051] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "an aperture" includes a plurality of such apertures, reference to "a fluid" includes a reference to one or more fluids and equivalents thereof known to those skilled in the art, and so forth.

[0049]

[0052] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a chamber body including a sidewall and a base; a substrate support extending through the base of the chamber body and including a support platen and a stem; a baffle extending around a stem of the substrate support, the baffle defining one or more apertures therethrough; a fluid source fluidly connected to the chamber body at an access between the stem of the substrate support and the baffle; 1. A semiconductor processing system comprising:

2. 10. The semiconductor processing system of claim 1, further comprising a pumping plate extending around said substrate support, said pumping plate forming a plenum between said pumping plate and said base of said chamber body.

3. The semiconductor processing system of claim 1 , further comprising an RF rod extending through said stem of said substrate support.

4. 4. The semiconductor processing system of claim 3, wherein the RF rod is coupled to an electrical ground or to an RF power source.

5. The semiconductor processing system of claim 1 , wherein the baffle includes a conductive cover extending along the stem of the substrate support.

6. 10. The semiconductor processing system of claim 1, wherein said base of said chamber body defines an access for a pumping system foreline.

7. The semiconductor processing system of claim 6 , wherein said base of said chamber body comprises a fluorine-containing coating.

8. forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber; flowing a purge gas through a gap defined between a substrate support and a baffle extending around a stem of the substrate support; generating a plasma discharge of the purge gas between the stem and the baffle of the substrate support; depositing a material onto a substrate resting on the substrate support; exhausting deposition by-products from the processing region; flowing the plasma effluents of the purge gas through apertures defined in the baffle while evacuating the deposition by-products from the processing region of the semiconductor processing chamber; A semiconductor processing method comprising:

9. The semiconductor processing method of claim 8 , wherein the baffle includes a conductive cover extending along the stem of the substrate support.

10. The semiconductor processing method of claim 8 , wherein the substrate support includes an RF rod extending through the stem of the substrate support.

11. 11. The semiconductor processing method of claim 10, wherein the plasma of the deposition precursor is a capacitively coupled plasma formed in the processing region of the semiconductor processing chamber.

12. 12. The semiconductor processing method of claim 11, wherein said plasma effluents of said purge gas are generated by emissions from said RF rod.

13. 10. The semiconductor processing method of claim 8, further comprising removing deposited material from surfaces of the semiconductor processing chamber with the plasma effluents of the purge gas.

14. the semiconductor processing chamber comprising: a chamber body including a sidewall and a base, the base of the chamber body defining an access for a pumping system foreline; a pumping plate extending around the substrate support, the pumping plate forming a plenum between the pumping plate and the base of the chamber body; 14. The semiconductor processing method of claim 13, comprising:

15. 15. The semiconductor processing method of claim 14, wherein the base of the chamber body comprises a fluorine-containing coating.

16. 15. The semiconductor processing method of claim 14, wherein the plasma effluents of the purge gas are flowed into the plenum formed between the pumping plate and the chamber body.

17. 17. The semiconductor processing method of claim 16, wherein the purge gas comprises oxygen or nitrogen trifluoride.

18. forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber; flowing a purge gas through a gap defined between a substrate support and a baffle extending around a stem of the substrate support; depositing a material onto a substrate resting on the substrate support; exhausting deposition by-products from the processing region; flowing the purge gas through apertures defined in the baffle while evacuating the deposition by-products from the processing region of the semiconductor processing chamber; A semiconductor processing method comprising:

19. 20. The semiconductor processing method of claim 18, wherein the purge gas reacts with the deposition by-products to form volatiles.

20. the semiconductor processing chamber comprising: a chamber body including a sidewall and a base, the base of the chamber body defining an access for a pumping system foreline; 20. The semiconductor processing method of claim 18, including a pumping plate extending around the substrate support, the pumping plate forming a plenum between the pumping plate and the base of the chamber body, the aperture defined through the baffle being formed at a location between the pumping plate and a platen of the substrate support.

Images