Display device

Abstract

To provide a display device with high performance, high reliability, and a small frame size.SOLUTION: A single crystal semiconductor film separated from a single crystal semiconductor substrate is used as a semiconductor film of a transistor constituting a drive circuit, and the transistor of the drive circuit has a thin film structure having high driving performance. By electrically connecting the drive circuit and an image display part with wiring disposed therebetween, a structure is made such that the image display part is positioned on the drive circuit in a state where at least part of the image display part overlaps the drive circuit.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a display device, a method for manufacturing a display device, and an electronic device. [Background technology]

[0002] Displays such as liquid crystal displays and EL (electroluminescence) displays The drive system for the device can be broadly divided into passive matrix and active matrix systems. Among these, the active matrix type has lower power consumption compared to the passive matrix type. As it is possible to increase power, resolution, and size of the substrate, it is suitable for use in television receivers, mobile phones, etc. It is widely used in displays.

[0003] The active matrix panel is driven by a large screen and has high resolution. As a result, high performance is also required of the drive circuits that control the drive state of the image display unit. For example, a drive circuit is formed using a material with very high mobility, such as a single-crystal silicon substrate. A high-performance semiconductor integrated circuit (hereinafter referred to as an integrated circuit) sealed with resin or the like is manufactured. The integrated circuit is manufactured using the COG (Chip on Glass) method or the TAB (Tape Au The image display unit is mounted on the substrate using the integrated bonding method. For example, see Patent Document 1 for the COG method.

[0004] In the COG and TAB methods, wiring between the driver circuit and the image display unit in the integrated circuit is To minimize the distance, the integrated circuit is installed close to the image display unit. In addition, since the display device has an integrated circuit, it functions as an image display unit. The non-functional peripheral area of the image display unit is called a "frame portion."

[0005] In recent years, larger image display units have been installed in the housing (i.e., the size of the image display unit has been increased). From the viewpoint of improving the design of the display device, The key to product design is how to make the frame of the display device as small as possible (i.e., narrowing the frame). It is considered one of the important elements in

[0006] In addition, in large display devices such as digital signage, multiple display devices are arranged side by side to simulate the appearance of a single display. Use as a display (also called a multi-display) In this case, multiple display devices are presented to the viewer as if they were a single display device. In order to make it easy to recognize the display as a single device, the frame of each display device should be made as small as possible, and the image of the adjacent display device should be It is desirable to have the image display units as close together as possible.

[0007] As a method for achieving a narrower frame of a display device, for example, as in Patent Document 2, (i.e., the surface on which the image display unit is not formed) and A technique for electrically connecting wiring to an integrated circuit in a folded manner is disclosed. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-255386 [Patent Document 2] Japanese Patent Application Laid-Open No. 2000-98417 Summary of the Invention [Problem to be solved by the invention]

[0009] However, when an integrated circuit is mounted on the back side of the substrate using the above method, the integrated circuit and the image The wiring distance that electrically connects the image display unit is long, which causes a decrease in the performance of the display device. This becomes:

[0010] In addition, since the wiring is exposed, it may be subject to deterioration depending on the installation environment of the display device. If an external load is applied to the display device, the wiring may deteriorate (for example, a broken wire), causing the display From the viewpoint of the reliability of the display device, this structure cannot be said to be preferable.

[0011] In view of the above problems, the present invention provides a display device with a small frame size, high performance, and high reliability. One of our goals is to provide

[0012] Another object of the present invention is to provide a method for manufacturing the display device.

[0013] Another object of the present invention is to provide an electronic device with high added value that is equipped with the display device. do. [Means for solving the problem]

[0014] A single crystal semiconductor film separated from a single crystal semiconductor substrate is used as a semiconductor film for a transistor that constitutes a driver circuit. By using a crystalline semiconductor film, the driving circuit has a thin film structure with high driving performance. Then, the image display unit is disposed on the drive circuit so that at least a part of the image display unit overlaps with the drive circuit. The configuration is as follows.

[0015] In the COG and TAB methods, an integrated circuit with a driver circuit is placed over the image display unit. Since part of the image is blocked by the integrated circuit, it is This method requires the integrated circuit to be placed outside the periphery of the display. Integrated circuit size (including the size of the drive circuit and the resin that seals the drive circuit, etc.) .) The above frame portion occurs on the display device.

[0016] In contrast, by configuring the display device as described above, the drive circuit and the image display unit can be overlapped. This reduces or eliminates the drive circuit from protruding from the image display area, making it possible to Portion sizes can be reduced.

[0017] In addition, in order to prevent a decrease in the performance of the drive circuit, the wiring that electrically connects the drive circuit and the pixel display unit is The line is also structured so that at least a part of it overlaps with the image display section.

[0018] When using the COG or TAB method, there is a gap between the integrated circuit and the image display. Wiring is routed across the gap in the surface direction of the substrate, electrically connecting the integrated circuit and the image display unit. Therefore, the wiring distance becomes longer.

[0019] In contrast, by configuring the display device as described above, the driving circuit or the image display unit is overlapped. The wiring can be routed at the desired position and the drive circuit and image display unit can be electrically connected. The wiring distance can be made extremely short, and the degradation of the performance of the display device can be suppressed.

[0020] Furthermore, by using the above-described display device in various electronic devices, the size of the image display unit can be maintained. This allows the product to be made smaller while still retaining its original shape, and improves the design of the display device, making it ideal for electronic equipment. This can increase the added value of the vessel.

[0021] That is, one embodiment of the present invention is a base substrate, a scanning line driver circuit and a signal line driver circuit on the base substrate, a first interlayer film covering the scanning line driver circuit and the signal line driver circuit; Wiring provided on the film and electrically connected to the scanning line driver circuit and the signal line driver circuit; a second interlayer film covering the lines; a scanning line driving circuit and a scanning line driving circuit formed on the second interlayer film by wiring; an image display section electrically connected to the signal line driver circuit and including a plurality of pixels arranged in a matrix; At least one of the scanning line driver circuit and the signal line driver circuit overlaps with the image display section. At least a part of the wiring overlaps with the image display section, and the wiring includes a scanning line driving circuit and a signal line driving circuit. The active layer of the transistor is made of a single-crystal semiconductor thin film separated from a single-crystal semiconductor substrate. The display device is characterized by being configured as follows.

[0022] As described above, the display device is configured such that scanning is performed by wiring sandwiched between the first interlayer film and the second interlayer film. At least one of the line driving circuit and the signal line driving circuit is electrically connected to the image display unit so as to overlap with the image display unit. By connecting them, the size of the frame portion can be reduced.

[0023] Another embodiment of the present invention is a semiconductor device including a base substrate, a scan line driver circuit and a signal line driver circuit over the base substrate, and a semiconductor device including a scan line driver circuit and a signal line driver circuit over the base substrate. a first interlayer film covering the driving circuit, the scanning line driving circuit, and the signal line driving circuit; and a wiring electrically connected to the scanning line driving circuit and the signal line driving circuit. a second interlayer film covering the first interlayer film, and a scanning line driving circuit and a signal line driving circuit provided on the second interlayer film by wiring; and an image display section electrically connected to the line driving circuit and having a plurality of pixels arranged in a matrix. However, both the scanning line driving circuit and the signal line driving circuit overlap with the image display section, and the scanning line driving circuit and a signal line driver circuit in which an active layer of a transistor is separated from a single crystal semiconductor substrate. The display device is characterized by being constructed using a crystalline semiconductor thin film.

[0024] The display device is configured such that scanning is performed by the wiring sandwiched between the first interlayer film and the second interlayer film as described above. The signal line driving circuit and the signal line driving circuit are electrically connected so as to overlap with the image display unit. This allows the size of the frame portion to be made smaller.

[0025] In the above-mentioned display device, both the scanning line driving circuit and the signal line driving circuit are By positioning the frame inside the peripheral edge of the frame, the size of the frame can be further reduced. It is possible.

[0026] In addition, in the above-mentioned display device, all of the wiring is provided at a position overlapping the image display unit. This allows the size of the frame portion to be further reduced.

[0027] By using the display device with the reduced frame size as the display unit of an electronic device, This allows the size of the display to be increased without increasing the size of the housing of the electronic device. This allows the display device to have high added value. This allows the screen size to be increased without increasing the size of the display, which also leads to a lighter display device.

[0028] In addition, a substrate that transmits 80% or more of light with a wavelength of 300 nm or more and 700 nm or less is used for a display device. The display device is used as a base substrate, and the image display section and the frame section of the adjacent display device are By placing multiple panels so that they overlap, the joints of the display (i.e., the frame) It is difficult to understand, and it can be made into a multi-display that can be recognized as a single display device. do. [Effects of the Invention]

[0029] By configuring the display device so that the drive circuit and the image display unit overlap, Since the protrusion of the active circuitry can be reduced, the size of the frame portion can be reduced.

[0030] By making the wiring that electrically connects the driver circuit and the pixel display section overlap with the image display section, Wiring can be formed without protruding from the image display area, so the wiring distance can be shortened. This can prevent the performance of the drive circuit from deteriorating.

[0031] Furthermore, by using the above-described display device in various electronic devices, the size of the image display unit can be maintained. This allows the product to be made smaller while still retaining its original shape, and improves the design of the display device, making it ideal for electronic equipment. This can increase the added value of the vessel. [Brief explanation of the drawings]

[0032] [Figure 1] 1A and 1B illustrate a structure of a display device. [Figure 2] 1A to 1C illustrate a method for manufacturing a display device. [Figure 3] 1A to 1C illustrate a method for manufacturing a display device. [Figure 4] 1A and 1B illustrate a structure of a display device. [Figure 5] 1 is an example of an electronic device using a display device. DETAILED DESCRIPTION OF THE INVENTION

[0033] Hereinafter, embodiments of the invention disclosed in this specification will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following description, and any deviation from the spirit and scope of the present invention is not permitted. It will be readily understood by those skilled in the art that various modifications can be made to the form and details thereof. Therefore, the present invention should not be construed as being limited to the description of the following embodiments.

[0034] In the embodiments described below, the same parts or parts having similar functions are referred to as The same reference numerals may be used in common between different drawings, and repeated explanations may be omitted.

[0035] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as those in the actual device for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The position, size, range, etc. are not necessarily limited to those disclosed in the drawings, etc.

[0036] In addition, ordinal numbers such as "first," "second," and "third" in this specification may be used to avoid confusion of elements. It should be noted that the numbers are added to avoid confusion and are not intended to limit the number.

[0037] In addition, in this specification, the terms "above" and "below" refer to the positional relationship of a component "directly above" or "below." does not necessarily mean "directly below." For example, if you say "B above A," It does not exclude the inclusion of other components between A and B.

[0038] In this specification and the like, the term "transfer of a film formed on a substrate or a part of a substrate to another substrate" is also used. (This can also be expressed as replacing.) The process is described as "transposition" or "transposition process."

[0039] (Embodiment 1) In this embodiment, an example of the configuration of a display device will be described with reference to FIG. An example of the manufacturing method will be described with reference to FIGS.

[0040] <Example of display device configuration> As an example of a display device, in this embodiment, a voltage is applied to a liquid crystal material sandwiched between a pair of electrodes. A display device 100 (also known as a reflective display device) applies a voltage to the display device 100 and displays an image using external light. The structure of the display device will be described with reference to FIG. 1. FIG. 1(A) is a plan view of the display device. FIG. 1(B) is a cross-sectional view of the A1-A2 portion of FIG. 1(A). Since it is difficult to describe the entire structure of the circuit layer in the -A2 cross section, in Figure 1(B) The operating circuit section, image display section, and external wiring connection section are described below. ), in order to make it easier to understand the position of each component of the display device 100, some components ( For example, the counter substrate 138 is not shown.

[0041] As shown in FIG. 1A, the display device 100 includes a scanning line driver circuit 150 on a base substrate 102. , a circuit layer 180 including a signal line driving circuit 152 and an image display section 154 is formed. The sealing material 136 provided around the periphery of the image display section 154 prevents the opposing substrate from being adhered to the base substrate 102. A plate 138 (not shown) is attached to the base substrate 102. External wiring 172 for supplying power supply voltage to the components provided on the layer is made of conductive material. It is connected via 170.

[0042] As shown in FIG. 1B, the circuit layer 180 includes a scanning line driving circuit 150 and a signal line driving circuit 151. 52 is formed at least, and the first circuit layer 156 is formed at least, and the image display unit 154 is formed at least. In FIG. 1B, the first circuit layer 156 has a second circuit layer 160. Although only the scanning line driving circuit 150 is shown, the signal line driving circuit is also included in the first circuit layer 156. Also included is Route 152.

[0043] The first circuit layer 156 includes a scanning line driving circuit 150 and a signal line driving circuit 152, and the second The image display unit 154 provided on the circuit layer 160 actually includes various elements (for example, thin film transistors). 1B, the configuration of the scanning line driving circuit 150 is formed. The transistor 158 used as an element is described on the first circuit layer 156, and the image display unit Component transistors 162 are shown in the second circuit layer 160 .

[0044] The transistor 158 included in the scanning line driving circuit 150 (and the signal line driving circuit 152) is An insulating film 104 formed on a base substrate 102 and a semiconductor film formed on the insulating film 104 106, and a source of a transistor 158 formed on the insulating film 104 and the semiconductor film 106. The source line (also called the source electrode) and the drain line (also called the drain electrode) and a conductive film 108 that functions as a transistor, and a transistor formed on the semiconductor film 106 and the conductive film 108. The insulating film 110 functions as a gate insulating film for the transistor 158, and the insulating film 110 is sandwiched between the semiconductor A conductive film is formed at a position overlapping the conductive film 106 and functions as a gate electrode of the transistor 158. The transistor 158 is covered with a first interlayer film 114. The circuit layer 156 is formed.

[0045] The transistor 158 is a component of the scanning line driver circuit 150 and the signal line driver circuit 152. As display devices become larger and have higher resolution, higher driving performance is required. A semiconductor film with low mobility such as amorphous silicon is used as the semiconductor film 1 of the transistor 158. 06 (which can also be expressed as being used as the active layer of transistor 158). is not appropriate.

[0046] To improve the driving performance of the transistor, a single-crystal semiconductor substrate (e.g., a single-crystal silicon substrate) There is also a method of forming a transistor on a substrate, but when this method is used, the display device This is very expensive, so it is not a realistic method, especially when enlarging the display device. It's hard to say.

[0047] In view of the above, in the display device described in this embodiment, the semiconductor film ( The active layer is made of a single-crystal semiconductor thin film separated from a single-crystal semiconductor substrate. One of its features is that

[0048] As will be described later, a single crystal semiconductor thin film is formed by forming a single crystal semiconductor substrate inside the single crystal semiconductor thin film. After bonding to a substrate (herein referred to as a support substrate), the single crystal semiconductor substrate is By separating the plate, a single crystal semiconductor thin film, which is a part of the single crystal semiconductor substrate, is formed on the support substrate. Therefore, even if the base substrate 102 is very large, the base substrate 1 The above-mentioned single-ended wiring is formed in the area where the scanning line driving circuit 150 and the signal line driving circuit 152 are formed on the surface of the wiring board. By forming a crystalline semiconductor thin film, it is possible to accommodate larger display devices.

[0049] The semiconductor layer 106 is formed by separating a single-crystal semiconductor thin film from a single-crystal semiconductor substrate as described above. When a film is used, the thickness of the scanning line driving circuit 150 and the signal line driving circuit 152 can be made very thin. Therefore, a planarizing film is formed on the scanning line driving circuit 150 and the signal line driving circuit 152 to By reducing the unevenness, the position where the scanning line driving circuit 150 and the signal line driving circuit 152 overlap is In addition, the image display unit 154 can be easily formed.

[0050] By utilizing the above-mentioned characteristics, at least a part of the scanning line driving circuit 150 and the signal line driving circuit 152 By arranging the image display unit 154 on the drive circuit so as to overlap with the display device 1, This makes it possible to significantly reduce the size of the frame part of 00.

[0051] The scanning line driving circuit 150 and the signal line driving circuit 152 overlap with the image display unit 154. In the case of the reflective display device described in this embodiment, the image display The image on the section 154 may be blocked by the scanning line driving circuit 150 and the signal line driving circuit 152. In addition, a display device using light irradiated from the substrate 102 side (transmissive display device or semi-transmissive display device) Even when this embodiment is applied to a display device, various conductive films and wiring By narrowing the line width and increasing the transmission area, various conductive films and conductive films with light-transmitting properties are used for wiring. By using this, the scanning line driving circuit 150, the signal line driving circuit 152 and the image display unit 15 Even if 4 overlaps, you can still get an image display.

[0052] The transistors 158 included in the scanning line driving circuit 150 and the signal line driving circuit 152 are , the structure is covered with the base substrate 102 and the second circuit layer 160, etc., The transistor 158 is effectively prevented from being adversely affected by factors such as moisture. It can be said that this is a structure that

[0053] Then, a second interlayer film 116 and an insulating film 118 are sandwiched on the first circuit layer 156. At least a second circuit layer 160 on which an image display section 154 is formed is formed.

[0054] The second interlayer film 116 is used for forming the first circuit layer 156 (the scanning line driving circuit 150 and the signal line The step caused by the above process is flattened, and the scanning line driving circuit 152 is formed. 50 and the signal line driving circuit 152. It has the effect.

[0055] The insulating film 118 prevents impurities such as moisture from entering from the outside, which may adversely affect the transistor 158. In addition, it has the effect of suppressing the intrusion of impurities (e.g., , hydrogen present in the first circuit layer 156, moisture present in the insulating layer 116, etc. This has the effect of suppressing diffusion into the second circuit layer 160.

[0056] The transistor 162 included in the image display unit 154 is formed on the insulating film 118. 20 and a base film 120 formed on the base film 120, which functions as a gate electrode of the transistor 162. The conductive film 122 and the transistor 162 formed over the base film 120 and the conductive film 122 an insulating film 124 that functions as a gate insulating film for the semiconductor film 1 formed on the insulating film 124; 26, and a source of the transistor 162 formed on the insulating film 124 and the semiconductor film 126. line (also expressed as source electrode) and drain line (also expressed as drain electrode). The conductive film 128 functions as a conductive film.

[0057] The transistor 162 is covered with an insulating film 130 and an insulating film 132. The conductive film 134 formed on the insulating film 130 is exposed through an opening formed in a part of the insulating film 132. The conductive film 128 is electrically connected to the conductive film 128 via the insulating film 126, forming a second circuit layer 160. The conductive film 134 functions as a pixel electrode in the image display section 154 .

[0058] The transistor 162 is a component of the image display unit 154 (a switching element of the image display unit 154). Generally, the scanning line driving circuit 150 and the signal line driving circuit 152 Therefore, the semiconductor film 126 is made of various materials. In view of the need for larger and higher definition display devices 100, the semiconductor film The channel forming region formed in 126 is at least 1 cm 2 / Vs] Therefore, the semiconductor film 126 is preferably a single layer, similar to the semiconductor film 106. A single crystal semiconductor film or a polycrystalline semiconductor film separated from a crystalline semiconductor substrate can be used. The semiconductor film material may be, for example, silicon, germanium, or silicon germanium. , silicon carbide, or gallium arsenide, etc., can be used.

[0059] Alternatively, an oxide semiconductor can be used as the material of the semiconductor film 126. The semiconductor film 126 made of a material may be single crystal, polycrystalline (also called polycrystalline), or non-crystalline. It takes on a crystalloid or other state.

[0060] Preferably, the semiconductor film 126 is CAAC-OS (C Axis Aligned Crystal The film is a stearate oxide semiconductor (SOS) film.

[0061] The CAAC-OS film is neither completely single crystalline nor completely amorphous. is an oxide semiconductor film with a crystalline-amorphous mixed phase structure in which the amorphous phase contains crystalline and amorphous parts. The crystal part must be small enough to fit inside a cube with one side less than 100 nm. In addition, transmission electron microscopes (TEM) In the observation image by a microscope, the amorphous part and the amorphous part contained in the CAAC-OS film were The boundary between the crystal and the CAAC-OS film is not clear. Therefore, the CAAC-OS film has no grain boundary. The resulting decrease in electron mobility is suppressed.

[0062] The crystal part included in the CAAC-OS film has a c-axis that is the normal vector of the surface on which the CAAC-OS film is formed. The triangle is aligned parallel to the normal vector of the sphere or surface and perpendicular to the ab plane. The metal atoms are arranged in a layered or hexagonal shape when viewed perpendicular to the c-axis. Metal atoms and oxygen atoms are arranged in layers. The orientation of the a and b axes may be different. The range of 5° to 95° is also included. This also includes the range of 10° to 5°.

[0063] In the CAAC-OS film, the distribution of the crystal parts may not be uniform. In the process of forming the C-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, The proportion of crystalline parts may be higher near the surface than near the growth surface. By adding impurities to the AC-OS film, the crystalline part in the impurity-doped region becomes amorphous. It may also be pawned.

[0064] The c-axis of the crystalline part in the CAAC-OS film is the normal vector of the surface on which the CAAC-OS film is formed. The CAAC-OS film shape (on which the film is formed) is Depending on the cross-sectional shape of the surface or the cross-sectional shape of the surface, they may face in different directions. The direction of the c-axis of the crystal is the normal vector of the surface on which the CAAC-OS film is formed. The direction of the crystal is parallel to the normal vector of the film or surface. is formed by carrying out a crystallization treatment such as a heat treatment after the film formation.

[0065] The electrical characteristics of a transistor using a CAAC-OS film change when irradiated with visible or ultraviolet light. Therefore, the transistor has high reliability.

[0066] Oxide semiconductors have a large energy gap of 3.0 to 3.5 eV or more. In a transistor obtained by processing under appropriate conditions, the off-state current is At temperatures below 25°C (for example, 100 ΩA (1 × 10 -19 A) or less, or 10z A(1×10 -20 A) or less, and even 1zA (1×10 -21 A) The following can be done: This makes it possible to realize a display device with low power consumption.

[0067] Then, on one side of the second circuit layer 160, a The conductive film 140 is formed on one side of the counter substrate 138, and the color filter 142 is formed on the other side of the counter substrate 138. The second circuit layer 160 and the conductive film 140 are sealed together using a sealing material 136 to form a seal on the base substrate. The gap between the bonded base substrate 102 and the opposing substrate 138 The gap can be adjusted by the spacer 144, and the base formed by the spacer 144 A liquid crystal material 146 is filled in the gap between the base substrate 102 and the counter substrate 138 .

[0068] In addition, the transistor 15 included in the scanning line driving circuit 150 (and the signal line driving circuit 152) 8, and the transistor 162 provided in the image display unit 154 is connected to the first circuit layer 156 and the second circuit layer 157. A conductive film 148 (connection wiring) formed between the wiring layers 160 and at least a part of which overlaps with the image display section. They are electrically connected via a wire.

[0069] By forming the conductive film 148 at the above-mentioned position, the conductive film 148 is formed on the first circuit layer 156. and the second circuit layer 160, and the outer periphery of the image display unit 154 (i.e., the frame Therefore, the display device 1 can be easily constructed by routing the conductive film 148. This prevents the frame part of 00 from becoming larger.

[0070] The display device described in this embodiment has the above-described configuration.

[0071] <Method for manufacturing a display device> Next, an example of a manufacturing process of the display device 100 shown in FIG. 1 will be described with reference to FIGS. 2 to 8. do.

[0072] First, an insulating film 104 and a semiconductor film 106 are formed on a base substrate 102 (FIG. 1(A) reference.).

[0073] The semiconductor film 106 described in this embodiment and the like is obtained by separating a part of a single crystal semiconductor substrate. The single crystal semiconductor substrate is formed by separating a part of the single crystal semiconductor substrate. As a method for forming a single crystal semiconductor thin film on the base substrate 102, for example, The method described in JP-A-2008-277789 can be used. A single crystal semiconductor thin film is formed on the base substrate 102 using other known techniques, not limited to those disclosed in the literature. The method and materials for forming the insulating film 104 and the semiconductor film 106 are described in detail below. The above-mentioned publicly known documents can be referred to, so the explanation will be omitted here.

[0074] The base substrate 102 must have at least sufficient heat resistance to withstand subsequent heat treatment. For example, barium borosilicate glass and aluminoborosilicate glass are Any substrate such as glass substrate, ceramic substrate, quartz substrate, sapphire substrate, etc. can be used. In addition, if it has an insulating surface, it can be used on a single crystal semiconductor substrate such as silicon or silicon carbide. substrates, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, etc. It is also possible.

[0075] Next, the source line (source It functions as a drain line (which can also be expressed as a drain electrode). The conductive film 108, the insulating film 110 which functions as a gate insulating film of the transistor 158, and the A conductive film 112 that functions as a gate electrode of the transistor 158 is formed. 8. In addition, the first interlayer film 114 is formed on the transistor 158. The first circuit layer 156 is formed (see FIG. 2B). Although only two transistors 158 are configured in 156, in reality, the first At least a scanning line driving circuit 150 and a signal line driving circuit 152 are formed in the circuit layer 156. It has been done.

[0076] In this embodiment, the first circuit layer 156 includes the first interlayer film 114. However, at least a scanning line driving circuit 150 and a signal line driving circuit 152 are included. As long as the structure is such that the first circuit layer 156 is formed, it can be expressed as the first circuit layer 156, regardless of the structure.

[0077] The conductive film 108 is formed by depositing a conductive film on the base substrate 102 and the insulating film 104 and then photolithographically A mask is formed on the conductive film by using a printing method, an ink-jet method, or the like, and the mask is The insulating film is formed by selectively removing a part of the conductive film using a mask.

[0078] The conductive film used to form the conductive film 108 is formed by physical vapor deposition such as vacuum deposition or sputtering. Physical Vapor Deposition (PVD) and Plasma CV Chemical Vapor Deposition (CVD) methods such as the D method on), for example, aluminum, chromium, copper, tantalum, titanium, molybdenum, A metal film containing an element selected from tungsten, or a metal nitride containing the above-mentioned element as a component. The films (titanium nitride film, molybdenum nitride film, tungsten nitride film) are used as single layer films or laminated films. Alternatively, the metal film such as aluminum or copper may be formed on one or both of the upper and lower sides. High-melting metal films such as titanium, molybdenum, and tungsten, or their metal nitride films (nitrides) Alternatively, a film in which a titanium nitride film, a molybdenum nitride film, a tungsten nitride film, or the like is stacked may be used. Alternatively, a conductive metal oxide film may be formed. In2O3, tin oxide (SnO2), zinc oxide (ZnO), indic oxide Tin oxide (In2O3-SnO2, abbreviated as ITO), indium oxide zinc oxide (In2 O3-ZnO) or a film of these metal oxides containing silicon oxide can be used. Since the conductive metal oxide film easily transmits light in the visible light range, it is particularly suitable for the display device 100. In the case of a display device using light irradiated from the substrate 102 side, This is preferable because the light emitted from the light source 152 easily passes through to the image display unit 154 side.

[0079] The insulating film 110 is preferably an oxide insulating film having sufficient withstand voltage and insulating properties. The insulating film 110 is formed by physical vapor deposition such as vacuum deposition or sputtering. (PVD: Physical Vapor Deposition) and plasma CVD methods Chemical Vapor Deposition (CVD) ) to form silicon oxide films, silicon oxynitride films, silicon nitride films, and silicon nitride oxide films. film, aluminum oxide film, aluminum nitride film, aluminum oxynitride film, aluminum nitride oxide film Aluminum film, gallium oxide film, yttrium oxide film, lanthanum oxide film, etc. The insulating film 110 may be formed by a layered structure. In this case, the plasma generated by microwaves (e.g., 2.45 GHz microwaves) By using microwaves, the film density is higher and the interface state density is lower than when microwaves are not used. This allows the formation of a high-quality insulating film with low deposition rate.

[0080] The insulating film 110 may be a hafnium oxide film or a hafnium silicate film (HfSi x O y x>0, y>0), nitrogen-doped hafnium silicate film (HfSiO x N y (x >0, y>0), hafnium aluminate film (HfAl x O y (x>0, y>0) Any high-k material may be used as at least a part of the insulating film 110. The gate leakage current can be reduced.

[0081] The conductive film 112 is formed by depositing a conductive film on the insulating film 110 and then performing photolithography, printing, or inkjet printing. A mask is formed on the conductive film by using an ink jet method or the like, and a part of the conductive film is It is formed by selectively removing portions.

[0082] The conductive film used to form the conductive film 112 is formed by, for example, a method such as vacuum deposition or sputtering. Physical Vapor Deposition (PVD) and Plasma Chemical Vapor Deposition (CVD) methods such as the Zuma CVD method Using the condition, molybdenum film, titanium film, tantalum film, tungsten film, aluminum film Metal films such as aluminum film, copper film, neodymium film, scandium film, etc., or films containing these as the main component The insulating film may be formed as a single layer or a laminated layer. Conductive metal oxide films include indium oxide (In2O3) and tin oxide (SnO 2) Film, zinc oxide (ZnO) film, indium tin oxide (In2O3-SnO2, ITO (sometimes abbreviated as "In2O3-ZnO") film, indium zinc oxide (In2O3-ZnO) film, or The conductive film 112 is formed by adding silicon or silicon oxide to the metal oxide film. It can be used in part or in whole.

[0083] Through the above steps, the scanning line driving circuit 150 and the signal line driving circuit 150 are formed on the base substrate 102. The transistor 158 can be formed with 152 .

[0084] The first interlayer film 114 on the transistor 158 used to form the first circuit layer 156 is The insulating film 110 may be formed by taking into consideration the materials and the method described in the description of the insulating film 110.

[0085] Next, a second interlayer film 116, an insulating film 118, and an underlayer film 120 are formed on the first interlayer film 114. , and the image display unit 154, the scanning line driving circuit 150, and the signal line driving circuit 152 are connected to the power supply. A conductive film 148 is formed to function as wiring for electrical connection (see FIG. 2C). In a later process, the external wiring 172, the scanning line driving circuit 150, and the signal line driving circuit 152 are electrically connected. The wiring 145 used for the electrical connection is formed in the process of forming the conductive film 148 (FIG. 2 See (C). ).

[0086] The second interlayer film 116 is formed to reduce the step caused by the formation of the first circuit layer 156. The second interlayer film 116 mainly serves as a planarization layer. Acrylic resin, polyimide resin, polyamide resin, etc. are coated using wet methods such as coating and printing. An organic resin such as a polyamide-imide resin or an epoxy resin is applied onto the first circuit layer 156. The insulating layer may be formed by hardening the insulating layer by heat treatment or the like. ), siloxane resin, PSG (phosphorus glass), BPSG (borophosphorus glass), etc. It is also possible to laminate a plurality of films made of these materials. The organic materials mentioned above often contain relatively large amounts of impurities such as moisture, so A film with low water vapor permeability (e.g., aluminum oxide or aluminum oxide) is placed in contact with the film formed by the A laminated film containing aluminum may be formed. If the resulting step is small enough not to adversely affect the formation of the second circuit layer 160, However, it is not necessary to provide the first circuit layer 156 .

[0087] The insulating film 118 prevents impurities from entering from the outside, which may adversely affect the electrical characteristics of the transistor 158. The effect of suppressing the penetration of impurities that may adversely affect the electrical characteristics of the transistor 162. The insulating film has the effect of suppressing diffusion from the first circuit layer 156. Although the semiconductor film 126 of the second circuit layer 160 does not necessarily have to be provided, the semiconductor film 118 may be oxidized. When a compound semiconductor film is used, if a large amount of hydrogen is contained in the oxide semiconductor film 126, the oxide semiconductor film 126 may be oxidized. By bonding with the semiconductor, some of the hydrogen becomes a donor and generates electrons, which act as carriers. This causes a negative shift in the threshold voltage of transistor 162, Increased variation in the initial characteristics of the transistor, increased dependency of the L length on the electrical characteristics of the transistor, This may cause problems such as increased degradation of electrical characteristics during T-stress testing. Therefore, it is desirable to provide the insulating film 118.

[0088] The insulating film 118 and the undercoat film 120 are formed using the same materials and methods as those described in the description of the insulating film 110. It can be formed by taking into consideration the above.

[0089] Note that when an oxide semiconductor film is used as the semiconductor film 106 included in the transistor 162, The base film 120 is a film that releases oxygen by heat treatment (hereinafter, it may be referred to as an oxygen supply film). It is preferable to use the following method. The reasons are as follows:

[0090] In the transistor using an oxide semiconductor film as the semiconductor film 126, If oxygen vacancies exist in the region where the panel is formed, charges may be generated due to the oxygen vacancies. In general, some of the oxygen vacancies in an oxide semiconductor film become donors and emit electrons as carriers. As a result, the threshold voltage of the transistor shifts in the negative direction.

[0091] When the underlayer 120 functions as an oxygen supplying film, the oxygen in the oxygen supplying film is removed by heat treatment. After forming the semiconductor film 126 described later, the oxygen supply layer is heated to release a part of the semiconductor. Oxygen is supplied to the film 126, and oxygen vacancies in the semiconductor film 126 can be compensated for. As a result, the shift of the threshold voltage of the transistor 162 in the negative direction can be suppressed. It is preferable that oxygen exists in the underlayer 120 in an amount exceeding at least the stoichiometric composition ratio. For example, when silicon oxide is used as the underlayer 120, SiO 2+α (however, It is preferable to use a silicon oxide film in which α>0. The region containing excess oxygen compared to the ideal composition ratio (hereinafter, sometimes referred to as the oxygen excess region) It is sufficient that the metal oxide is present in at least a part of the base film 120 .

[0092] The above-mentioned "film that releases oxygen by heat treatment" is a film that Thermal desorption spectroscopy (TDS) analysis revealed that oxygen atoms The amount of oxygen released in terms of oxygen atoms is 1.0 x 10 19 atoms / cm 3 More than 3, preferably 3 .0×10 19 atoms / cm 3 More preferably, 1.0 x 702 0 atoms / cm 3 More preferably, 3.0 x 702 0atoms / cm 3 That's all say.

[0093] Here, the method for measuring the amount of released oxygen converted into oxygen atoms in TDS analysis is as follows: will be explained.

[0094] The amount of gas released by TDS analysis is proportional to the integral value of the spectrum. The amount of released gas can be calculated by the ratio of the integral value of the spectrum to the reference value of the standard sample. The reference value of the standard sample is the integral value of the spectrum in a sample with a predetermined atomic density. is the ratio of atomic density to

[0095] For example, the TDS analysis results of a silicon wafer containing a specified density of hydrogen as a standard sample, and From the results of TDS analysis of the insulating film, the amount of oxygen molecules released from the insulating film (N O2 ) is calculated using equation (1). Here, the mass-to-charge ratio (M / z) obtained by TDS analysis was detected at 32. It is assumed that all of the spectra obtained are from oxygen molecules. Although there is 3OH, it is not considered here as it is unlikely to exist. The oxygen molecule contains two isotopes of oxygen: one with M / z 17 and the other with M / z 18. However, this is not taken into consideration because its presence in nature is extremely small.

[0096]

number

[0097] N H2 is the density converted value of hydrogen molecules desorbed from the standard sample. H2 is a standard test The standard sample is the integral value of the spectrum obtained by TDS.H2 / S H2 Let's say S O2 is the integral value of the spectrum obtained by TDS analysis of the insulating film. This is a coefficient that affects the spectral intensity in DS. For details of Equation (1), see Japanese Patent Application Laid-Open No. 2004-200944. The amount of oxygen released from the insulating film is based on the data of the Electronic Science Corporation. A thermal desorption analyzer EMD-WA1000S / W manufactured by the company was used, and a standard sample of 1 × 10 1 6 atoms / cm 3 The measurement is performed using a silicon wafer containing hydrogen atoms.

[0098] In addition, some of the oxygen is detected as oxygen atoms in TDS analysis. The ratio of the oxygen molecules can be calculated from the ionization rate of the oxygen molecules. Since the ionization rate of oxygen atoms is included in the calculation, the amount of oxygen atoms released can be estimated by evaluating the amount of oxygen molecules released. It can also be estimated.

[0099] In addition, N O2 is the amount of released oxygen molecules. The amount of released oxygen atoms is This is twice the amount released.

[0100] The introduction of oxygen into the film can be achieved by heat treatment in an oxygen atmosphere, ion implantation, or ion doping. plasma immersion ion implantation, plasma immersion ion implantation in an oxygen-containing atmosphere Plasma treatment or the like can be used.

[0101] When oxygen is supplied from the base film 120 to the semiconductor film 126 by heat treatment, The oxygen released from the underlayer 120 is efficiently supplied to the semiconductor film 126. The lower layer is a membrane with low oxygen permeability and water vapor permeability (which can also be expressed as moisture permeability). For example, it is preferable to form a film in contact with the base film 120. The insulating film 118 may be an aluminum oxide film, an aluminum oxynitride film, or an aluminum nitride oxide film. A structure in which a barrier film such as an aluminum oxide film is formed may be used. In this case, the membrane is made dense (membrane density 3.2 g / cm 3 or more, preferably 3.6 g / cm 3 (The above) It is preferable to do so.

[0102] The conductive film 148 can be formed by taking into consideration the materials and methods described in the description of the conductive film 108. That's fine.

[0103] Next, a conductive film 122 serving as a gate electrode of a transistor 162 is formed over the base film 120. , the insulating film 124 which functions as a gate insulating film of the transistor 162, the semiconductor film 126, The source line (which can also be expressed as a source electrode) and the drain line (which can also be expressed as a drain electrode) of the transistor 162 are The conductive film 128 that functions as a gate electrode is formed, and the transistor 162 is formed. In addition, the insulating film 130, the insulating film 132, and the conductive film 134 are formed over the transistor 162. By forming the second circuit layer 160, the second circuit layer 160 is formed, which includes the image display section 154 (FIG. 2(D)). The conductive film 134 is formed through openings in the insulating films 130 and 132. The pixel electrode 162 is electrically connected to the transistor 162 and functions as a pixel electrode of the image display unit 154. It works.

[0104] In addition, in a later process, the external wiring 172, the scanning line driving circuit 150, and the signal line driving circuit 152 The wiring 129 and the wiring 135 used for electrically connecting the conductive film 128 The conductive film 134 is formed in the step of forming the conductive film 134 (see FIG. 2D).

[0105] The second circuit layer 160 is not limited to this structure, and may include at least the image display unit 154. As long as the structure is such that the second circuit layer 160 is formed, it can be expressed as the second circuit layer 160, regardless of the structure.

[0106] The conductive film 122 can be formed by taking into consideration the materials and methods described in the description of the conductive film 112. That's fine.

[0107] When an oxide semiconductor film is used as the semiconductor film 126, at least the insulating film of the conductive film 122 A film having a work function larger than that of the film used as the semiconductor film 126 is used on the surface in contact with the insulating film 124. The film is preferably an In-Ga-Zn-O film containing nitrogen, a nitrogen-containing film, or a In-Sn-O film, nitrogen-containing In-Ga-O film, nitrogen-containing In-Zn-O film, nitrogen-containing In-Zn-O film, Nitrogen-containing Sn-O films, nitrogen-containing In-O films, metal nitride films (InN, SnN, etc.), etc. Metal oxide films containing silicon can be used. These films have an electron volt (eV) of 5 eV, Preferably, the film has a work function of 5.5 eV (electron volts) or more, and is used as a gate electrode. When using this, the threshold voltage of the electrical characteristics of the transistor can be made positive, A normally-off switching element can be realized.

[0108] The insulating film 124 can be formed by taking into consideration the materials and methods described in the description of the insulating film 110. That's fine.

[0109] When an oxide semiconductor film containing indium is used as the semiconductor film 126, If the insulating film 124 is in direct contact with the semiconductor film 126, the indium in the semiconductor film 126 will This can cause the insulating layer to diffuse into the transistor 162, adversely affecting the electrical characteristics of the transistor 162. A film having a function of suppressing indium diffusion is formed between the insulating film 124 and the semiconductor film 126. For example, gallium oxide, zinc gallium oxide, etc. may be used as the film. In addition, the insulating film 124 itself can be used as a film having a function of suppressing the diffusion of indium. That's fine.

[0110] The semiconductor film 126 is, for example, a semiconductor film separated from a single crystal semiconductor substrate, similar to the semiconductor film 106. A single crystal semiconductor film made of silicon, germanium, silicon gel, or the like can be used. Polycrystalline (also called polycrystalline) silicon, silicon carbide, or gallium arsenide ) film, microcrystalline (also called microcrystal) film or amorphous film as a semiconductor film. These films may be formed using known techniques.

[0111] The semiconductor film 126 may be formed by sputtering, MBE (Molecular Beam Epitaxy), or the like. m Epitaxy, CVD, pulsed laser deposition, ALD (Atomic Laser Deposition), After forming an oxide semiconductor film by a photolithography method or the like, A mask is formed on the oxide semiconductor film by a lithography method, a printing method, an inkjet method, or the like. Then, a part of the oxide semiconductor film is selectively removed using the mask to form a semiconductor film 126. An oxide semiconductor film may also be used. The oxide semiconductor film may be a single crystal or a polycrystalline film. It can take on a crystalline (also called polycrystalline) or amorphous state.

[0112] When an oxide semiconductor film is used as the semiconductor film 126, CAAC-OS (C Axis A ligned Crystalline Oxide Semiconductor) membrane It is preferable to set the following.

[0113] When a CAAC-OS film is formed as the semiconductor film 126, the film can be formed by the following three methods. The first method is to form an oxide semiconductor film at a film formation temperature of 200° C. or higher and 450° C. or lower. The second method is to form a CAAC-OS film by depositing an oxide semiconductor film. The film is then subjected to a heat treatment at 200°C to 700°C to form a CAAC-OS film. The third method is to form an oxide semiconductor film in two separate layers, and After forming a thin conductive film, the first layer is heat-treated at 200℃ to 700℃. By forming a C-OS film and then forming a second layer on the film, the crystals of the first layer can be used as seed crystals to form a second layer. In this method, the first oxide semiconductor film is a CAAC-OS film.

[0114] The conductive film 128 can be formed by taking into consideration the materials and methods described in the description of the conductive film 108. That's fine.

[0115] The scanning line driving circuit 150 (and the signal line driving circuit 151) provided on the first circuit layer 156 52) and the image display unit 154 provided on the second circuit layer 160. An opening is formed in a part of the insulating film 124, the undercoat film 120, the insulating film 118 and the second interlayer film 116. The conductive film 128 is formed in a state where the conductive film 148 is exposed.

[0116] The insulating film 130 can be formed by taking into consideration the materials and methods described in the description of the insulating film 118. The insulating film 132 may be formed using the same materials and methods as those described for the second interlayer film 116. Just take this into consideration and form it.

[0117] The conductive film 134 functions as a pixel electrode of the image display unit 154. It may be formed by taking into consideration the materials and methods described in the explanation of 108.

[0118] Next, a film as a common electrode of the display device 100 is formed on one surface of the insulating film 132 and the conductive film 134. A conductive film 140 that functions as a conductive film is formed on one side, and a color filter 142 is formed on the other side. The facing substrate 138 is then covered with the sealing material 136 in a state where the second circuit layer 160 and the conductive film 140 face each other. When the substrate is attached to the base substrate 102, A spacer 144 is sandwiched between the substrate 138 and the counter substrate 138 to adjust the gap size between them. Then, the base substrate 102 formed by the spacer 144 is bonded to the substrate 102. The display device 100 is configured by injecting a liquid crystal material 146 into the gap between the liquid crystal layer 146 and the opposing substrate 138. Completed (see Figure 3(A)).

[0119] The counter substrate 138 is formed by taking into consideration the materials and methods described in the description of the base substrate 102. The conductive film 140 may be formed using the same materials and methods as those described in the description of the conductive film 108. It should be formulated taking into consideration the law.

[0120] The color filter 142, the spacer 144, and the liquid crystal material 146 may be formed of various materials and shapes. There is no particular limitation on the method of forming the sealing material 136, and any known technique can be used. Regarding the material and forming method, and the method for bonding the base substrate 102 and the counter substrate 138, Even if the above is the case, known techniques can be used.

[0121] Next, the scanning line driving circuit 150 (and the signal line driving circuit 152) included in the first circuit layer 156 ) and electrically connected to the wiring 135, an external wiring 172 is attached to the wiring 135 using a conductive material 170. (See Figure 3(B)).

[0122] The conductive material 170 and the external wiring 172 may be made of various known materials. For example, the conductive material 170 may be anisotropic conductive resin (ACP). Conductive Paste) and Anisotropic Conductive Film (ACF) Conductive Film) can be used, and the external wiring 172 can be Flexible printed circuit board (FPC) ts) can be used.

[0123] Through the above steps, the display device 100 shown in FIG. 1 can be formed.

[0124] The light emitting device includes a scanning line driving circuit 150 and a signal line driving circuit 152. The semiconductor film 106 of the transistor 158 is a single crystal semiconductor thin film separated from the single crystal semiconductor substrate. Since it is a thin film transistor formed using a material, it has high driving capability.

[0125] Furthermore, the scanning line driving circuit 150 and the signal line driving circuit 152 are formed of thin film elements (e.g., For example, thin film transistors are used to configure the scanning line driving circuit 150 and The thickness of the first circuit layer 156 including the signal line driving circuit 152 can be made very thin. Therefore, a second circuit layer 16 having an image display unit 154 is provided so as to overlap the first circuit layer 156. 0 can be formed.

[0126] In addition, the image display unit 154, the scanning line driving circuit 150, and the signal line driving circuit 152 are electrically connected to each other. A conductive film 148 for electrically connecting the image display unit 154 is formed at a position overlapping the image display unit 154 .

[0127] Therefore, in the display device 100, the scanning line driving circuit 150 and the and the signal line driver circuit 152 is not required. This eliminates the space required for routing wiring between the signal line driving circuit 150 and the signal line driving circuit 152. Therefore, the frame portion of the display device 100 can be significantly reduced.

[0128] In addition, a first circuit layer 156 including a scanning line driving circuit 150 and a signal line driving circuit 152 is Since the structure is sandwiched between the base substrate 102 and the second circuit layer 160, the scanning line driving circuit The transistor 158, which is one of the components of the circuit 150 and the signal line driver circuit 152, Therefore, the structure is such that impurities (such as moisture) are difficult to penetrate from the outside. The scanning line driving circuit 150 and the signal line driving circuit 152 are provided with stable characteristics for a long period of time. It can be made highly reliable.

[0129] The image display unit 154 of the display device 100 in this embodiment is provided with a circuit layer 180. A liquid crystal material is sandwiched between a conductive film 134 provided on the opposite substrate 138 and a conductive film 140 provided on the opposite substrate 138. The structure of a liquid crystal display device is described, which displays an image by applying a power supply voltage to the device. However, as shown in FIG. 4, a partition wall 402 is formed to cover the end of the conductive film 134. An EL layer 404 including a light-emitting layer containing at least a light-emitting organic compound is formed on the conductive film 134. A conductive film 406 is formed on the EL layer 404 so as to overlap the conductive film 134 with the EL layer 404 sandwiched therebetween. The display device 400 may be provided with an image display unit having a configuration in which the display shown in FIG. The device 400 has a color filter 142 formed on the opposing substrate 138, but If the desired image can be displayed using only the light emitted from the color filter 142, the color filter 142 is not necessary. It is not necessarily necessary to set one up.

[0130] (Embodiment 2) The semiconductor device disclosed in this specification and the like can be applied to various electronic devices (including gaming machines). The electronic device can be, for example, a television device (television or television (also called digital receivers), computer monitors, digital cameras, digital video cameras cameras such as digital cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices) (c), portable game machines, personal digital assistants, audio playback devices, large game machines such as pachinko machines, etc. Examples of electronic devices including the display devices described in the above embodiments are as follows: This will be explained in.

[0131] FIG. 5A is a diagram showing an example of a portable information terminal 500, in which a display unit 501 is mounted on a housing 501. 02, a speaker 503, a camera 504, a microphone 505, and an external connection terminal 506. The housing 501 contains various electronic components (for example, CP It incorporates a microprocessor, MPU, memory elements, etc.

[0132] The display device having the structure described in the above embodiment is used as the display unit 502 of the information terminal 500. This allows the frame of the information terminal 500 to be extremely small. The size of the display unit 502 can be increased without increasing the size of the body 501. This allows, for example, a larger screen size while maintaining a shape that can be held in one hand, and allows for more accurate display of information. This increases the added value of the information terminal 500. In addition, the screen size can be increased without changing the housing size. Since the size can be increased, the information terminal 500 can also be made lighter.

[0133] In addition, a communication device is provided in the information terminal 500, and it can be used as a mobile phone (also called a smartphone). It may also be used as such.

[0134] FIG. 5B is a diagram illustrating an example of a television device 510. The television device 510 includes a housing 511 and a display unit 51. 2 and the like are incorporated and supported by a stand 513.

[0135] The display unit 512 of the television device 510 may be a display having the structure described in the above embodiment. By using this device, the frame of the television set can be made extremely small. Therefore, the size of the display unit 512 can be increased without increasing the size of the housing 511. Therefore, the television device 510 can be a high-value-added product with a sophisticated design. In addition, the screen size can be increased without changing the size of the case, This also leads to a reduction in the weight of the revision device 510.

[0136] The television device 510 is operated by directly touching the operation buttons displayed on the display unit 512. In addition, it can be done by using an operation switch provided on the housing 511 or a separate remote control. This can be done using a computer operator.

[0137] The television device 510 is configured to include a receiver, a modem, etc. It can receive television broadcasts and can also communicate by wire or wireless via a modem. By connecting to a network, you can send and receive data in one direction (sender to receiver) or two directions (sender to receiver). It is also possible to communicate information between the recipient and the receiver, or between receivers themselves.

[0138] The television set 510 having the display device having the structure described in this embodiment is Since the edge portion is extremely small, as shown in FIG. 5(C), the housing 511 having the display unit 512 is Even when several units are arranged side by side to be used as a multi-display 520, the viewer can see the display unit 5 The seams between the 12 pieces (i.e., the frame) are difficult to see, so the viewer feels as if they are one piece of display. This has the advantage that it can be recognized as a device.

[0139] In particular, a substrate that transmits 80% or more of light with wavelengths between 300 nm and 700 nm is used as the base substrate. The display device used as the display device was as shown in FIG. 5(D) (an enlarged view of the dotted square portion in FIG. 5(C)). In addition, it is preferable to install the adjacent display devices so that the image display section and the frame section overlap each other. The display device according to the first embodiment has a portion that does not overlap with the image display portion (i.e., a frame portion The light-shielding circuits, such as the scanning line driving circuit and the signal line driving circuit, are formed in the LCD panel. Since there is no display unit 512 or the area where it is formed is extremely small, the display unit 512 is Even if the image overlaps with the frame, it will be clearly displayed to the viewer, so the frame between the display devices This completely eliminates the need for a single display device, allowing the viewer to perceive it as a single display device.

[0140] As described above, the scope of application of the present invention is extremely wide, and it can be applied to electronic devices and information display devices in all fields. It can be used for stages.

[0141] This embodiment mode can be implemented in appropriate combination with other embodiment modes. [Explanation of symbols]

[0142] 100 display device 102 Base board 104 insulating film 106 Semiconductor film 108 Conductive film 110 insulating film 112 Conductive film 114 First interlayer film 116 Second Interlayer Film 118 insulating film 120 Base film 122 Conductive film 124 insulating film 126 Semiconductor Film 128 Conductive Film 129 Wiring 130 insulating film 132 insulating film 134 Conductive film 135 Wiring 136 Sealing materials 138 Opposing substrate 140 Conductive film 142 color filters 144 Spacer 145 Wiring 146 Liquid Crystal Materials 148 Conductive Film 150 Scanning line driving circuit 152 Signal line driver circuit 154 Image display unit 156 First Circuit Layer 158 transistors 160 Second Circuit Layer 162 transistors 170 Conductive Materials 172 External wiring 180 circuit layer 400 display device 402 Bulkhead 404 EL layer 406 Conductive film 500 Information terminal 501 Case 502 Display section 503 Speaker 504 Camera 505 Microphone 506 External connection terminal 510 Television equipment 511 Case 512 Display section 513 Stand 520 Multi-Display

Claims

1. a first conductive film having a region that functions as a pixel electrode; a layer containing a light-emitting organic compound having a region located above the first conductive film; a second conductive film having a region located above the layer containing the light-emitting organic compound; a first insulating film having a region located below the first conductive film; a third conductive film having a region located below the first insulating film; a first semiconductor film having a region located below the third conductive film; a second insulating film having a region located below the first semiconductor film; a fourth conductive film having a region located below the second insulating film; a third insulating film having a region located below the fourth conductive film; a second semiconductor film having a region located below the third insulating film, the first semiconductor film includes an oxide semiconductor and includes a channel formation region of a first transistor; the second semiconductor film includes silicon and a channel formation region of a second transistor; the first transistor is electrically connected to the first conductive film, the third conductive film has a region functioning as one of a source electrode and a drain electrode of the first transistor, the third conductive film is electrically connected to the second transistor; the layer containing a light-emitting organic compound is located above the second semiconductor film and has a region overlapping with the second semiconductor film, the first conductive film is located above the second semiconductor film and has a region overlapping with the second semiconductor film; a power supply voltage is applied to the fourth conductive film; the power supply voltage is supplied to the second transistor; A display device that does not have a color filter above the second conductive film.

2. A first conductive film having an area that functions as a pixel electrode; a layer containing a light-emitting organic compound having a region located above the first conductive film; a second conductive film having a region located above the layer containing the light-emitting organic compound; a first insulating film having a region located below the first conductive film; a third conductive film having a region located below the first insulating film; a first semiconductor film having a region located below the third conductive film; a second insulating film having a region located below the first semiconductor film; a fourth conductive film having a region located below the second insulating film; a third insulating film having a region located below the fourth conductive film; a second semiconductor film having a region located below the third insulating film, the first semiconductor film includes an oxide semiconductor and includes a channel formation region of a first transistor; the second semiconductor film includes silicon and a channel formation region of a second transistor; the first transistor is electrically connected to the first conductive film, the third conductive film has a region functioning as one of a source electrode and a drain electrode of the first transistor, the third conductive film is electrically connected to the second transistor; the layer containing a light-emitting organic compound is located above the second semiconductor film and has a region overlapping with the second semiconductor film, the first conductive film is located above the second semiconductor film and has a region overlapping with the second semiconductor film; a power supply voltage is applied to the fourth conductive film; the power supply voltage is supplied to the second transistor via a third transistor provided in the same layer as the second transistor; A display device that does not have a color filter above the second conductive film.

3. A first conductive film having an area that functions as a pixel electrode; a layer containing a light-emitting organic compound having a region located above the first conductive film; a second conductive film having a region located above the layer containing the light-emitting organic compound; a first insulating film having a region located below the first conductive film; a third conductive film having a region located below the first insulating film; a first semiconductor film having a region located below the third conductive film; a second insulating film having a region located below the first semiconductor film; a fourth conductive film having a region located below the second insulating film; a third insulating film having a region located below the fourth conductive film; a second semiconductor film having a region located below the third insulating film, the first semiconductor film includes an oxide semiconductor and includes a channel formation region of a first transistor; the second semiconductor film includes silicon and a channel formation region of a second transistor; the first transistor is electrically connected to the first conductive film, the third conductive film has a region functioning as one of a source electrode and a drain electrode of the first transistor, the third conductive film is electrically connected to the second transistor; the layer containing a light-emitting organic compound is located above the second semiconductor film and has a region overlapping with the second semiconductor film, the first conductive film is located above the second semiconductor film and has a region overlapping with the second semiconductor film; a power supply voltage is applied to the fourth conductive film; the power supply voltage is supplied to the second transistor; The display device further comprises a color filter disposed above the second conductive film.

4. A first conductive film having an area that functions as a pixel electrode; a layer containing a light-emitting organic compound having a region located above the first conductive film; a second conductive film having a region located above the layer containing the light-emitting organic compound; a first insulating film having a region located below the first conductive film; a third conductive film having a region located below the first insulating film; a first semiconductor film having a region located below the third conductive film; a second insulating film having a region located below the first semiconductor film; a fourth conductive film having a region located below the second insulating film; a third insulating film having a region located below the fourth conductive film; a second semiconductor film having a region located below the third insulating film, the first semiconductor film includes an oxide semiconductor and includes a channel formation region of a first transistor; the second semiconductor film includes silicon and a channel formation region of a second transistor; the first transistor is electrically connected to the first conductive film, the third conductive film has a region functioning as one of a source electrode and a drain electrode of the first transistor, the third conductive film is electrically connected to the second transistor; the layer containing a light-emitting organic compound is located above the second semiconductor film and has a region overlapping with the second semiconductor film, the first conductive film is located above the second semiconductor film and has a region overlapping with the second semiconductor film; a power supply voltage is applied to the fourth conductive film; the power supply voltage is supplied to the second transistor via a third transistor provided in the same layer as the second transistor; The display device further comprises a color filter disposed above the second conductive film.

5. In any one of claims 1 to 4, The display device, wherein the oxide semiconductor contains indium.

Images